M. George Craford

M. George Craford's AcademicInfluence.com Rankings

M. George Craford

Engineering

#251

World Rank

#475

Historical Rank

#117

USA Rank

Electrical Engineering

#91

World Rank

#106

Historical Rank

#41

USA Rank

engineering Degrees

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Engineering

M. George Craford's Degrees

Bachelors Physics University of Southern California
Masters Physics University of Southern California
PhD Physics University of Southern California

Why Is M. George Craford Influential?

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According to Wikipedia, M. George Craford is an American electrical engineer known for his work in Light Emitting Diodes . Raised in an Iowa farming community, he studied physics at the University of Iowa, where he earned his BA in 1961. Craford received his MS and PhD degrees in physics from the University of Illinois at Urbana–Champaign in 1967, began his professional career at the Monsanto Chemical Company, where he discovered the "Yellow light". When Monsanto sold its LED and compound semiconductor business in 1979, Craford went to Hewlett Packard, where in 1982 he became the research and development manager of the HP Optoelectronics Division. When Lumileds Lighting spun out from HP in 1999, Craford was named the company's Chief Technical Officer .

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M. George Craford's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting (2007) (1713)
High dislocation densities in high efficiency GaN‐based light‐emitting diodes (1995) (867)
High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency (1999) (450)
InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures (2004) (386)
Very high‐efficiency semiconductor wafer‐bonded transparent‐substrate (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes (1994) (232)
High Power LEDs – Technology Status and Market Applications (2002) (212)
High performance AlGaInP visible light‐emitting diodes (1990) (206)
High brightness light emitting diodes (1997) (162)
LEDs challenge the incandescents (1992) (146)
A study of parasitic reactions between NH3 and TMGa or TMAI (1996) (136)
Twofold efficiency improvement in high performance AlGaInP light‐emitting diodes in the 555–620 nm spectral region using a thick GaP window layer (1992) (133)
Radiative recombination mechanisms in GaAsP diodes with and without nitrogen doping (1972) (128)
Effect of Te and S Donor Levels on the Properties of GaAs 1-x P x near the Direct-Indirect Transition (1968) (110)
Recombination dynamics in InGaN quantum wells (1996) (98)
The Effect of Nitrogen Doping on GaAs1−xPx Electroluminescent Diodes (1971) (94)
LEDs for solid state lighting and other emerging applications: status, trends, and challenges (2005) (94)
Electroluminescence of Diffused GaAs1 − xPx Diodes with Low Donor Concentrations (1969) (84)
Vapor phase epitaxial materials for LED applications (1973) (75)
High-Efficiency Zn-Diffused GaAs Electroluminescent Diodes (1972) (53)
Electroluminescence and Electrical Properties of High‐Purity Vapor‐Grown GaP (1971) (52)
Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers (1992) (45)
Commercial Light Emitting Diode Technology (1996) (43)
Spontaneous and stimulated photoluminescence on nitrogen A‐line and NN‐pair line transitions in GaAs1−x Px : N (1972) (41)
High-brightness AlGaInN light-emitting diodes (2000) (35)
Band structure enhancement and optimization of radiative recombination in GaAs1−x Px:N (and In1−x Gax P:N) (1974) (35)
Recent developments in light-emitting-diode technology (1977) (35)
Photoluminescence Associated with Multivalley Resonant Impurity States above the Fundamental Band Edge: N Isoelectronic Traps in GaAs 1-x P x (1971) (34)
Visible LEDs: the trend toward high-power emitters and remaining challenges for solid state lighting (2002) (32)
Impurity‐induced layer disordering of high gap Iny(AlxGa1−x)1−yP heterostructures (1988) (31)
Stimulated Emission Involving the Nitrogen Isoelectronic Trap in GaAs1−xPx (1971) (31)
Effect of composition and pressure on the nitrogen isoelectronic trap in GaAs 1-x P x (1976) (29)
Optical Phase-Shift Measurement of Carrier Decay Times (77°K) on Lightly Doped Double-Surface and Surface-Free Epitaxial GaAs (1971) (29)
The luminescent properties of nitrogen doped GaAsP light emitting diodes (1973) (29)
Stimulated Emission in an Indirect Semiconductor: N Isoelectronic Trap-Assisted Recombination in GaA (1971) (27)
Short‐wavelength (≲6400 Å) room‐temperature continuous operation of p‐n In0.5(AlxGa1−x)0.5P quantum well lasers (1988) (26)
GaAs ‐ GaAsP Heterostructure Injection Lasers (1971) (26)
Characterization of OMVPE-grown AlGaInN heterostructures (1996) (24)
Visible Light-Emitting Diodes: Past, Present, and Very Bright Future (2000) (23)
Pumping of GaAs1−x Px : N (at 77 °K, for x≲0.53) by an electron beam from a gas plasma (1973) (20)
High Power LEDs for Solid State Lighting : Status, Trends, and Challenges (2008) (20)
Native‐oxide stripe‐geometry In0.5(AlxGa1−x)0.5P‐In0.5Ga0.5P heterostructure laser diodes (1991) (19)
Optical study of (AlxGa1−x)0.5In0.5P/GaAs semiconductor alloys by spectroscopic ellipsometry (1993) (18)
Impurity‐induced layer disordering in In0.5(Alx Ga1−x)0.5P‐InGaP quantum‐well heterostructures: Visible‐spectrum‐buried heterostructure lasers (1989) (18)
Chapter 2 Overview of Device Issues in High-Brightness Light-Emitting Diodes (1997) (15)
Stimulated emission in In0.5(AlxGa1−x)0.5P quantum well heterostructures (1988) (14)
Light‐Emitting Diodes (2003) (14)
From Holonyak to Today (2013) (14)
Short‐wavelength (∼625 nm) room‐temperature continuous laser operation of In0.5(AlxGa1−x)0.5P quantum well heterostructures (1988) (14)
Heterojunction laser operation of N‐free and N‐doped GaAs1−yPy (y=0.42–0.43, λ∼6200 Å, 77 °K) near the direct‐indirect transition (y∼yc?0.46) (1975) (13)
Effect of crystal composition on ``quasidirect'' recombination and LED performance in the indirect region of GaAs1−xPx:N (1974) (13)
Properties and electroluminescence of the GaAs1−xPx ternary system (1973) (13)
50th Anniversary of the Light-Emitting Diode (LED): An Ultimate Lamp [Scanning the Issue] (2013) (13)
Photoexcited resonance-enhanced nitrogen-trap GaAs 1-x P x :N laser (1973) (13)
Gallium phosphide high‐temperature electroluminescent p‐n‐p‐n switches and controlled rectifiers (1972) (12)
Resonant enhancement (?) of the recombination probability at the nitrogen-trap, Γ-band edge crossover in GaAs1-xPx: N(EN = EΓ, x ≡ xN) (1975) (12)
Parasitic Reactions between Alkyls and Ammonia in OMVPE (1995) (11)
Long Lifetime (Laser) States in p‐Type Si‐Doped GaAs (1970) (11)
Characteristics and potential applications of GaAs1-xPx MIS structures (1974) (11)
Model calculations for radiative recombination in Zn-N-doppedGaAs1−xPxin the direct and indirect composition region (1974) (10)
Recombination transitions in Zn–N‐doped GaAs1−xPx in the direct and indirect composition regions (1974) (9)
An overview of early studies on persistent photoconductivity and other properties of deep levels in GaAsP: The effect of deep levels on light emitting devices (1991) (9)
Spontaneous and stimulated carrier lifetimes (77°K) in GaAs1−xPx and GaAs1−xPx : N (1974) (8)
GaAs optical waveguide structures at 10.6-microm wavelength. (1975) (7)
Stimulated Emission and Laser Operation (cw, 77°K) of Direct and Indirect GaAs1−xPx on Nitrogen Isoelectronic Trap Transitions (1972) (7)
High-power truncated-inverted-pyramid (AlxGa1-x)0.5In0.5P light-emitting diodes (2000) (7)
Photoluminescence of quasi-direct transitions in disordered In/sub 1-x/Ga/sub x/P/graded GaP alloys (1997) (6)
Isoelectronic trap transitions in GaAs1−xPx:N in the region of resonant enhancement (ENN ∼ EΓ, 0.3 (1973) (6)
Temperature-dependent minority-carrier lifetime measurements of red AlGaAs light emitting diodes (1995) (6)
Comparison of SiIII‐SiV and SiIII‐VIII diffusion models in III‐V heterostructures lattice matched to GaAs (1988) (6)
Light-Emitting Diode Displays (1985) (6)
Heterojunction laser operation of GaAs1−xPx : N on NN‐pair (ENN) and A‐line (EN) transitions near the direct (Γ) band edge (1975) (6)
HYDROGENATION-DEFINED STRIPE-GEOMETRY IN0.5(ALXGA1-X)0.5P QUANTUM-WELL LASERS (1990) (6)
Planar native‐oxide buried‐mesa AlxGa1−xAs‐In0.5(AlyGa1−y)0.5P‐ In0.5(AlzGa1−z)0.5P visible‐spectrum laser diodes (1992) (5)
Magnetic properties of donors in GaAsP (1991) (5)
Visible light emitting diode technology: high performance, more colors, and moving into incandescent lamp applications (1996) (5)
High-performance AlGaInP light-emitting diodes (1997) (4)
Pressure dependence of AlxGa1−xAs light emitting diodes near the direct‐indirect transition (1985) (4)
Photopumped phonon‐assisted laser operation (77 K) of In0.5(AlxGa1−x)0.5P quantum well heterostructures (1989) (4)
An overview of visible light emitting diode (LED) development and the potential for AlInGaP devices (1993) (4)
Pressure study of the N Γ and N X bound-state interaction in nitrogen-doped GaAs 1-x P x (1976) (4)
Low-loss large-area GaAs/GaAsP heterostructure as optical waveguide at 10.6 μm☆ (1974) (4)
High-brightness A1GaInN light-emitting diodes (2000) (3)
Behavior of above‐gap NN pair states in radiative recombination in GaAs1−xPx : N+ (x=0.24, 77°K) (1974) (3)
Chapter 1 Visible Light-Emitting Diodes (1999) (2)
Diodes, Light-emitting (2004) (2)
Laser operation of GaAs1−xPx:N (x = 0.37, 77 °K) on photopumped NN3 pair transitions (1973) (2)
Electron‐beam‐pumped semiconductor laser using a gas plasma gun (GPG) (1973) (1)
High-flux and high-efficiency nitride-based light-emitting devices (2002) (1)
Thin Film Optical Waveguides in 3-5 Semiconductors (1973) (1)
High-power AlInGaN light-emitting diodes (2001) (1)
Gas plasma gun (GPG) electron-beam pumped semiconductor laser (1973) (0)
Anomalous Current Peaks in the I-V Characteristic for Tunneling Between Two Superconductors (1964) (0)
The effect of high pressure on S and Te-doped GaAs1-xPx (1967) (0)
Heterojunction laser operation of GaAs/sub 1-x/P/sub x/:N on NN-pair E/sub NN/ and A-line E/sub N/ transitions near the direct (GAMMA) band edge (1975) (0)
Development of high temperature gallium phosphide rectifiers (1972) (0)
Erratum: ‘‘Optical study of (AlxGa1−x)0.5ln0.5P/GaAs semiconductor alloys by spectroscopic ellipsometry’’ [J. Appl. Phys. 73, 400 (1993)] (1994) (0)
AD-763 i 20 THIN FILM OPTICAL WAVEGUIDES IN III-V SEMICONDUCTORS (2012) (0)
High–Efficiency Light–Emitting Diodes and Laser Diodes and the Development of “The Alloy Road” (2021) (0)
Visible Semiconductor Laser Operation Below 640 Nm At Room Temperature (1988) (0)
Apparatus and method for the doping of semiconductor materials by diffusion (1975) (0)
High temperature gallium phosphide rectifiers (1972) (0)
THE ISSUE 50 th Anniversary of the Light-Emitting Diode ( LED ) : An Ultimate Lamp (2013) (0)
The Effect of High Pressure on Sulfur and Tellurium-Doped Gallium - Arsenide(1-X) - Phosphide(x) (1967) (0)
Diodes, Light‐emitting (2007) (0)
Visible LEDs: Past, Present, and Future (2007) (0)
Evaluation of GaAs thin-film waveguides at 10.6-µm wavelength (1973) (0)

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M. George Craford's Academic­Influence.com Rankings