Milan Jaroš

Milan Jaroš's AcademicInfluence.com Rankings

Milan Jaroš

Physics

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Physics

Milan Jaroš's Degrees

PhD Physics Charles University
Masters Physics Charles University
Bachelors Physics Charles University

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Milan Jaroš's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Wave Mechanics Applied to Semiconductor Heterostructures (1991) (1167)
Trapping characteristics and a donor-complex ( DX ) model for the persistent-photoconductivity trapping center in Te-doped Al x Ga 1 − x As (1979) (630)
Complex nature of gold-related deep levels in silicon (1980) (196)
Deep Levels in Semiconductors (1982) (154)
Electronic properties of semiconductor alloy systems (1985) (138)
Pressure dependence of GaAs/AlxGa1−xAs quantum‐well bound states: The determination of valence‐band offsets (1986) (120)
Ultrathin SimGen strained layer superlattices-a step towards Si optoelectronics (1992) (113)
Wave functions and optical cross sections associated with deep centers in semiconductors (1977) (99)
ABSORPTION SPECTRA AND OPTICAL TRANSITIONS IN INAS/GAAS SELF-ASSEMBLED QUANTUM DOTS (1997) (92)
Localized defects in III-V semiconductors (1976) (79)
Physics and applications of semiconductor microstructures (1989) (79)
Study of the main electron trap inGa1−xInxAsalloys (1977) (60)
Intersubband optical transitions in Si‐Si0.5Ge0.5 superlattices (1989) (53)
Electric field-induced shifts and lifetimes in GaAs-GaAlAs quantum wells (1985) (51)
Two-electron impurity states in GaP:O (1975) (45)
Optimization of growth parameters for direct band gap SiGe superlattices (1990) (43)
Carrier lifetimes and localisation in coupled GaAs-GaAlAs quantum wells in high electric fields (1986) (35)
Band Structure Engineering in Semiconductor Microstructures (1989) (35)
Room‐temperature electroluminescence from Si/Ge/Si1−xGex quantum‐well diodes grown by molecular‐beam epitaxy (1996) (34)
New electron states in GaAs-GaxAl1-xAs superlattice (1984) (30)
Self-consistent pseudopotential calculation of electronic states associated with a reconstructed silicon vacancy (1979) (28)
Optical properties of imperfect strained-layer InAs/Ga1-xInxSb/AlSb superlattices with infrared applications (2000) (27)
Optical cross sections associated with deep levels in semiconductors. I (1980) (25)
Confined electron states in GaAs-Ga1-xAlxAs (0.2≤x≤1.0) superlattices (1986) (24)
Electronic states associated with the substitutional nitrogen impurity in GaPxAs1-x (1979) (22)
Self-consistent pseudopotential calculations of the electronic structure of a hydrogen interstitial in crystalline silicon (1979) (22)
Extrinsic photoconductivity in high‐resistivity GaAs doped with oxygen (1977) (22)
The microscopic dielectric function in silicon and diamond (1970) (20)
Auger recombination cross section associated with deep traps in semiconductors (1980) (19)
ELECTRONIC STRUCTURE OF GASB/GAAS QUANTUM DOMES (1998) (18)
A case for large Auger recombination cross sections associated with deep centers in semiconductors (1978) (18)
Systematic study of type II Ga1-xInxSb/InAs superlattices for infra-red detection in the 10-12 µm wavelength range (2001) (16)
Calculations of impurity states in semiconductors: II. GaP:O (1973) (16)
Electronic structure and transport properties of GaAs‐GaAlAs superlattices in high perpendicular electric fields (1987) (15)
A simple analytic expression for optical cross sections associated with deep impurity states in semiconductors (1975) (15)
Calculations of impurity states in semiconductors: I (1973) (15)
Covalency in silicon, germanium and grey tin (1969) (14)
Chapter 5 Microscopic Phenomena in Ordered Superlattices (1990) (14)
The electronic structure and stability of localised defects in semiconductors. II. Vacancies in silicon, gallium phosphide and zinc selenide (1984) (13)
Microscopic description of confinement in quantum well and sawtooth semiconductor superlattices (1985) (13)
Large optical nonlinearities in semiconductor superlattices (1989) (13)
The microscopic dielectric function and charge density in germanium (1971) (13)
Optical spectra of a (Si4Ge4)5 quantum well structure in an external electric field (1988) (13)
Localization at imperfect interfaces and its role in optical spectra of quantum well structures (1993) (12)
Optimum Si‐Si1−xGex structures with strong infrared spectra (1990) (12)
Novel mid-infrared silicon/germanium detector concepts (2000) (12)
Pseudopotential calculations of the effect of displacement upon the impurity levels introduced by deep donor oxygen in GaAs, GaP, Si and nitrogen in diamond (1977) (11)
Characterization of GaSb/InAs type II infrared detectors at very long wavelengths: Carrier scattering at defect clusters (2003) (11)
Electronic structure, impurity binding energies, absorption spectra of InAs/GaAs quantum dots (1998) (11)
Auger recombination in strained SixGe1−x/Si superlattices (1998) (11)
Electronic structure of the divacancy in silicon (1983) (11)
Electronic structure of quantum-well states revealed under high pressures (1988) (11)
Effects of interfacial ordering on the optical properties of Si-Ge superlattices (1993) (10)
Binding to deep impurities in semiconductors (1980) (10)
Ground states and photoionization of iron group transition metal impurities in semiconductors (1971) (10)
Band offsets and zone-folding in GaAsAlAs (001) superlattices (1987) (10)
Localized electron states associated with Ga and As vacancies in GaAs (1975) (9)
Confinement in the GaSb-InAs(001) superlattice (1986) (9)
The origin of room temperature luminescence in Si-Ge quantum wells: The case for an interface localization model (1996) (9)
Room-temperature luminescence from Si/Ge single quantum well diodes grown by molecular beam epitaxy (1995) (9)
Ground states of shallow donors in silicon and germanium (1971) (9)
The binding of electrons by nitrogen pairs in GaP (1979) (9)
Midinfrared silicon/germanium based photodetection (1998) (9)
Electronic structure and optical transitions in GaAs-Ga1-xAlxAs(001) superlattices (1986) (9)
Optical properties of Si-Ge superlattices (1990) (8)
Quantitative theory of scattering in antimonide-based heterostructures with imperfect interfaces (2000) (8)
An understanding of ohmic contact formation with Ge doping of n-GaAs (1975) (8)
Localized interface states and the optical spectra of AlSb/InAs heterostructures (1998) (8)
Quantitative theory of optical properties of SiGe heterostructure (1992) (8)
Quantitative theory of optical properties of HgTe‐CdTe superlattices (1987) (7)
Shallow States in Semiconductors by Impurity Model Potential Method (1969) (7)
On binding to N in GaP (1973) (7)
Electric field effects on spectroscopic lineshapes in GaAs-GaAlAs quantum wells (1985) (7)
Electronic properties of paramagnetic P(Ga) in GaP (1978) (7)
Band structure engineering of a nonlinear optical response in semiconductor superlattices (1990) (7)
Structural parameters governing properties of GaInSb/InAs infra-red detectors (2001) (7)
Optimized SiGe/Si multiple quantum wells for detector applications (1997) (6)
Pseudopotential impurity theory and covalent bonding in semiconductors (1968) (6)
The effects of modulation doping, static electric field and alloy ordering upon the electronic structure of GaAs-Ga1-xAlxAs superlattices and heterojunctions (1986) (6)
Electronic structure of Ge in SiO2 (1985) (6)
Localized states in the presence of a phosphorus vacancy in GaP (1977) (6)
Defect states dominated by localised potentials in semiconductors (1981) (6)
InAs/? and InAs/? superlattices for infrared applications (1998) (6)
Electronic structure of and strained layer superlattices (1986) (5)
Chapter 4 - Fundamental Physics of Strained Layer GeSi: Quo Vadis? (1998) (5)
Excited states of neutral defects in semiconductors (1982) (5)
Models of GaSb/InAs type-II infrared detectors at very long wavelengths: band offsets and interface bonds (2003) (5)
Alloy layer disorder in strained-layer InAs/GaInSb/AlSb superlattices with infrared laser applications (2002) (5)
Electronic structure of oxygen in gallium phosphide (1983) (5)
Strain-induced electron states in Si0.75Ge0.25(Si/Si0.5Ge0.5)(001) superlattices (1986) (5)
Microscopic description of electronic structure and scattering in disordered antimonide-based heterostructures (1999) (5)
Linear and nonlinear optical properties of direct gap Si-Ge superlattices (1991) (5)
Effect of interface localization on elastic scattering in AlSb/InAs superlattice infrared detectors (2001) (5)
Optical spectra of a five-period Si4-Ge6 superlattice on (001) Ge substrate (1991) (4)
Absorption and emission spectra of InAs/Ga1−xInxSb/AlSb nanostructures for infrared applications (2000) (4)
Auger decay of X-point excitons in a type II GaAs/AlGaAs superlattice (1988) (4)
Absorption coefficient and electric-field-induced localization in InAs-AlGaSb multi-quantum well structures (1994) (4)
Optical properties of perfect and imperfect SiGe superlattices (1989) (4)
Many-electron excited states of O- in GaP (1984) (4)
New aspects of the electronic structure of the GaSb-InAs (001) superlattice (1985) (4)
Optical spectra and recombination in Si–Ge heterostructures (1997) (4)
A study of the electronic wavefunction associated with isolated nitrogen impurities in GaP (1981) (4)
On the valence charge density and covalency in silicon (1970) (4)
Confined electron states associated with secondary X and L conduction band minima of GaAs–Ga1-xAlxAs (001) quantum-well and sawtooth superlattices (1985) (4)
CORRIGENDUM: The nature of dangling bonds at line defects in covalent semiconductors (1981) (4)
Electrical properties of dislocation lines in silicon (1982) (4)
Electronic structure of CdTe:Hg (1985) (4)
Electron charge distribution in the vicinity of substitutional N in GaP (1977) (4)
New electron states of negative ions in semiconductors (1984) (4)
Electronic states at line defects in silicon (1980) (3)
Band structure effects in III-V superlattices under hydrostatic pressure as a means of determining microscopic signature of perfect and imperfect semiconductor interfaces (1991) (3)
Auger-free SiSiGe quantum well structures for infra-red detection at 10 μm (1996) (3)
Unconventional simulation tasks in OrCAD PSpice via simulation manager (2008) (3)
A study of electron binding at the isoelectronic nitrogen centre in GaP and InGaP (1974) (3)
The electronic properties of dangling bonds in silicon (1983) (3)
TRANSPORT PROCESSES IN SILICON OXIDATION .1. DRY OXIDATION (1987) (3)
Self-consistent electronic structure of vacancies in semiconductors (1985) (3)
Covalent effects in α-Sn (1969) (3)
Electronic properties and stability of first-row impurities in semiconductors (1983) (3)
Auger lifetimes for excitons bound to deep impurities in semiconductors (1983) (3)
LETTER TO THE EDITOR: Si/Ge self-assembled quantum dots for infrared applications (2001) (3)
Band Structure Engineering in Si-Ge Structures (1995) (3)
Giant enhancement of impurity scattering at weakly bonded localised defects in semiconductors (1984) (3)
Mid-infrared silicon/germanium focal plane detector arrays (1999) (3)
Electronic structure of GaAs–Ga1−xAlxAs quantum wires (1987) (3)
The theory of the impurity model potential in semiconductors (1969) (2)
Second harmonic generation via excitations between valence sub-bands in p-type GaAs–AlAs and Si–SiGe quantum well structures (1993) (2)
Many-band pseudopotential calculation of photoionization of zinc in silicon (1972) (2)
Impurity states in GaAs:O (1973) (2)
IR absorption and quantum efficiency of highly p-doped SiGe layers (1997) (2)
Band structure of GaInAs-InP superlattices (1987) (2)
Effect of ordering, interface imperfections and clusters, and external electric fields on optical spectra of Si-SiGe heterostructures (1993) (2)
Electronic structure, effective masses and non-linear optical response in Hg1-xCdxTe-Hg1-yCdyTe and Hg1-xCdxTe-Cd1-yZnyTe superlattices (1990) (2)
Optical cross sections associated with deep levels in semiconductors. II. Comparison of theory with experiment (1982) (2)
Absorption and Recombination in p-type SiGe quantum well structures (1994) (2)
Optimisation and stability of optical spectra of novel SiGe quantum well structures in an external electric field (1995) (1)
Microscopic Theory Of Zone-Folding And Momentum Mixing In Semiconductor Superlattices And Quantum Wires (1987) (1)
Charge‐density fluctuations and spatial modulation of heavy‐ and light‐hole‐like character in GaAs‐AlGaAs(001) superlattices (1986) (1)
Momentum mixing enhancement of band non-parabolicity in GaAs-Ga1-xAlxAs superlattices (1988) (1)
Tunnelling and optical transitions at defects exhibiting large lattice relaxation (1985) (1)
Covalent effects round impurities (1970) (1)
Optical nonlinearities in highly excited Si-SiGe quantum well structures (1993) (1)
Virtual optical nonlinearity in GaAs-AlAs superlattices. (1991) (1)
Remark on the Theory of the ESR Spectrum of the d1‐Configuration in Rutile (TiO2) (1967) (1)
Many-band pseudopotential calculations of impurity states in silicon (1973) (1)
GaAsAlAs and SiSiGe quantum well structures for applications in nonlinear optics (1994) (1)
Microscopic Theory of Semiconductor Superlattices (1991) (1)
Hot carrier recombination in GaAs-GaAlAs quantum wells and superlattices (1985) (1)
Single particle ground state of ZnTe:O (1974) (1)
Growth and characterization of ultrathin SimGen strained-layer superlattices (1991) (1)
On the theory of an ESR spectrum: d1 configurations in rutile (1968) (1)
[Contribution on Salmonella cholerae suis infections]. (1966) (1)
The role of band structure effects on electron capture and real space transfer in semiconductor superlattices (1991) (1)
On the binding mechanism concerning medium-deep localised levels in III–V semiconductors (1981) (1)
Electronic structure, effective masses and optical properties of perfect and imperfect HgTe-Hg1-xCdxTe and HgTe-Zn1-yCdyTe superlattices (1990) (1)
Scattering from interface islands: enhanced lifetimes through non-linear effect of cation defects (2001) (1)
The effect of an electric field on optical spectra and transmission in Si-Si1-xGex quantum well structures. (1994) (1)
On the role of the lowest conduction band minima in the formation of localised impurity states in direct gap semiconductors (1982) (1)
Exciton transport and localization in type‐II GaAs/AlAs superlattices (1993) (1)
Characterization of ideal and disordered InAS/GaSb heterostructures for infrared technologies (2002) (1)
Optical spectra and recombination in SiGe/Si heterostructures for infrared applications (1996) (1)
Addendum: Large optical nonlinearities in semiconductor superlattices [Appl. Phys. Lett. 55, 1609 (1989)] (1990) (1)
Covalency and the theory of the g-factor: d3 configuration (1968) (0)
Second-harmonic generation in ultranarrow p-type stepped GaAs quantum wells (1993) (0)
Band Structure Effects on Stark Levels and Real Space Electron Transfer in Perfect and Imperfect Quantum Wells and Superlattices (1991) (0)
Optical properties of ultrathin silicon-germanium superlattices (1988) (0)
Band Structure Engineering of Non-Linear Response in Semiconductor Superlattices (1989) (0)
Scaling-law anomaly and band-structure-enhanced optical nonlinearities in semiconductor superlattices (1993) (0)
Electronic structure and transport properties of GaAs-GaAlAs quantum superlattices in high perpendicular electric fields (2013) (0)
Valence charge density in grey tin (1970) (0)
Remark on the Theory of the ESR Spectrum of the d1-Configuration in Rutile (TiO2) (1967) (0)
Novel microscopic properties and the electronic structure of SiGe heterostructures and related systems (1997) (0)
Band structure effects determining the frequency dependence of the third-order susceptibility in semiconductor superlattices (1992) (0)
Second harmonic generation in p-type GaAs quantum wells (1994) (0)
Quantitative theory of enhancement and optimisation of optical nonlinearities in semiconductor quantum wells and superlattices (1996) (0)
REACTION OF SELENIUM(VI) OXIDE WITH ANTIMONY(III), ANTIMONY(V) AND BISMUTH(III) CHLORIDE (1977) (0)
Second Harmonic Generation in GaAs-AlAs and Si-SiGe Quantum Well Structures (1994) (0)
Electronic properties of HgTe-Hg1−xCdxTe and HgTeZn1−yCdyTe superlattices with ideal and non-ideal interfaces (1991) (0)
On the theory of covalent bonding in solids (1970) (0)
InAs = Ga 1 − x In x Sb and InAs = Al 1 − x Ga x Sb superlattices for infrared applications (1998) (0)
Si-SiGe and GaAl-AlAs quantum-well structures for second-harmonic generation (1993) (0)
The Effect of Interface Engineering and Wave Function Localisation on Optical Response in Imperfect Type I and Type II Quantum Well Structures (1995) (0)
Atomic bonding and thermodynamic properties of pseudo-binary semiconducting alloys (2016) (0)
effort to provide a more accomplished theory of the electronic structure of mi- crosystems, we have recently (2017) (0)
Momentum mixing enhancement of the conduction band nonparabolicity in GaAsGa1−xAlxAs, GaAsGaAs1−xPx and SiSi1−xGex superlattices (1989) (0)
Novel GaAs-AlAs and Si-SiGe quantum well structures with large optical nonlinearities (1994) (0)
The role of layer width in valley mixing and cross-interface recombination in GaAs-AlAs superlattices (1991) (0)
Recombination Mechanisms in a Type II GaAs/AlGaAs Superlattice (1989) (0)
Large optical nonlinearities in SiGe superlattices (1990) (0)
Concepts and Applications of Band Structure Engineering in Optoelectronics (1991) (0)
Large optical nonlinearities in novel semiconductor superlattices (1990) (0)
Second Harmonic Generation in p-type Quantum Wells (1994) (0)
Three-level resonant optical susceptibility, in a GaAs-AlAs superlattice (1994) (0)
Electron States in Semiconductor Microstructures (1986) (0)
Microscopic Theory of Non-Linear Phenomena in Semiconductor Superlattices (1990) (0)
Ground states and photoionization of deep impurities in semiconductors GaP:Cu (1971) (0)
Electronic properties and optical spectra of InAs/GaAs self-assembled quantum dots (1998) (0)
Electron devices for the real world (1992) (0)
Optical Properties of Imperfecṫ Si-Ge Heterostructures (1993) (0)
Covalency and anisotropicg-factor of V2+ in NaCl (1967) (0)
The effects of interface disorder on interband and intersubband transitions in - - structures (1997) (0)
On the Covalency in Transition-Metal Impurity Covalent Complexes (1968) (0)
Bandstructure effects and near-resonant enhancement of the third-order susceptibility in GaAs-AIAs superlattices (1992) (0)
On the dielectric screening in semiconductors (1972) (0)
Wave-function engineering in Si-Ge microstructures: linear and nonlinear optical response (1991) (0)
Blue Stark shifts in (InAs)1−x(GaSb)x‐AlSb superlattices (1991) (0)
Many- Electron Localised States of Negative Ions in Semiconductors (1985) (0)
Novel silicon/germanium infrared detectors grown by MBE (1997) (0)
Wave Function Engineering of Linear and Non-Linear Optical Response in Si-Ge Quantum Well Structures and Superlattices (1991) (0)
Band structure engineering of optical nonlinearities in semiconductor superlattices (1990) (0)
Modeling GaInAs/GaAsSb type-II superlattices grown on InP for optoelectronic applications (2001) (0)
Chemical Shift in Binding Energies of Zn and Cd in GaP and GaAs (1972) (0)
Summary Abstract: Strain‐induced confined electron states in Si/SixGe1−x superlattices (1986) (0)
Structure and doping optimization of SiGe heterojunction internal photoemission detectors for mid-infrared applications (2001) (0)
Book reviewRecombination in semiconductors: By Peter T. Landsberg. Pp. 595. Cambridge University Press. 1991. £95.00, US $180.00 ISBN 0 521 36122 2 (1992) (0)
Nonlinear Optical Properties of Ultranarrow P-Type Gaas Quantum Wells (1993) (0)
Erratum: Intersubband optical transitions in Si‐Si0.5Ge0.5 superlattices [Appl. Phys. Lett. 54, 1986 (1989)] (1989) (0)
Microscopic theory of heterojunctions (1990) (0)
Stability of oxygen impurity in silicon and gallium phosphide (1983) (0)
Two-Electron States of GaP : O (1974) (0)
Optical properties of mesoscopic Si-Ge heterostructures (1992) (0)
On the Core Behavior of Dislocations in the Covalent Semiconductors C, Si and Ge (2017) (0)

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