Manijeh Razeghi

Q: What Schools Are Affiliated With Manijeh Razeghi

Manijeh Razeghi is affiliated with the following schools: Northwestern University , Northwestern University, University of Tehran, University of Illinois Chicago

Manijeh Razeghi's AcademicInfluence.com Rankings

Manijeh Razeghi

Physics

#2203

World Rank

#3300

Historical Rank

#886

USA Rank

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Physics

Manijeh Razeghi's Degrees

PhD Physics Northwestern University

Why Is Manijeh Razeghi Influential?

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According to Wikipedia, Manijeh Razeghi is an Iranian-American scientist in the fields of semiconductors and optoelectronic devices. She is a pioneer in modern epitaxial techniques for semiconductors such as low pressure metalorganic chemical vapor deposition , vapor phase epitaxy , molecular beam epitaxy , GasMBE, and MOMBE. These techniques have enabled the development of semiconductor devices and quantum structures with higher composition consistency and reliability, leading to major advancement in InP and GaAs based quantum photonics and electronic devices, which were at the core of the late 20th century optical fiber telecommunications and early information technology.

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Manijeh Razeghi's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Semiconductor ultraviolet detectors (1996) (1122)
Room temperature quantum cascade lasers with 27% wall plug efficiency (2011) (329)
Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44 (1983) (301)
QEPAS based ppb-level detection of CO and N2O using a high power CW DFB-QCL. (2013) (258)
Short-wavelength solar-blind detectors-status, prospects, and markets (2002) (246)
Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier (2007) (233)
Narrow-gap semiconductor photodiodes (2000) (197)
Electroluminescence at 375nm from a ZnO∕GaN:Mg∕c-Al2O3 heterojunction light emitting diode (2006) (174)
AlGaN ultraviolet photoconductors grown on sapphire (1996) (171)
Room temperature continuous wave operation of quantum cascade lasers with 12.5% wall plug efficiency (2008) (170)
High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature (2007) (164)
High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN (1999) (162)
Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering (2004) (161)
High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well (2004) (159)
High-Performance InP-Based Mid-IR Quantum Cascade Lasers (2009) (159)
High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates (1995) (158)
Solar-blind AlGaN photodiodes with very low cutoff wavelength (2000) (157)
Buried heterostructure quantum cascade lasers with high continuous-wave wall plug efficiency (2007) (147)
Quantum cascade lasers: from tool to product. (2015) (143)
Quantum cascade lasers that emit more light than heat (2010) (142)
Room temperature continuous wave operation of quantum cascade lasers with watt-level optical power (2008) (142)
High-quality visible-blind AlGaN p-i-n photodiodes (1999) (141)
High-temperature, high-power, continuous-wave operation of buried heterostructure quantum-cascade lasers (2004) (140)
Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detector (1998) (138)
Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm (2002) (138)
Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices (1998) (131)
Continuous-wave operation of λ∼4.8μm quantum-cascade lasersat room temperature (2004) (130)
4.5 mW operation of AlGaN-based 267 nm deep-ultraviolet light-emitting diodes (2003) (128)
Conduction‐ and valence‐band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition (1990) (127)
Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications (2002) (126)
Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm (2007) (125)
Uncooled operation of type-II InAs∕GaSb superlattice photodiodes in the midwavelength infrared range (2005) (124)
Temperature dependent characteristics of λ∼3.8μm room-temperature continuous-wave quantum-cascade lasers (2006) (123)
2.4 W room temperature continuous wave operation of distributed feedback quantum cascade lasers (2011) (116)
OPTICS 2409 High power mid-infrared interband cascade lasers based on type-II quantum wells (1997) (116)
High-power, room-temperature, and continuous-wave operation of distributed-feedback quantum-cascade lasers at λ∼4.8μm (2005) (115)
High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices (2011) (114)
AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89% (2013) (113)
High quantum efficiency AlGaN solar-blind p-i-n photodiodes (2004) (112)
Aluminum nitride films on different orientations of sapphire and silicon (1996) (110)
Fundamentals of Solid State Engineering (2002) (108)
First cw operation of a Ga0.25In0.75As0.5P0.5‐InP laser on a silicon substrate (1988) (108)
Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes (2007) (107)
Determination of the band-gap energy of Al 12x In x N grown by metal-organic chemical-vapor deposition (1997) (107)
Room temperature continuous wave operation of λ ∼ 3–3.2 μm quantum cascade lasers (2012) (105)
Handbook of Infrared Detection Technologies (2002) (105)
AlxGa1−xN (0⩽x⩽1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition (1997) (102)
VISIBLE BLIND GAN P-I-N PHOTODIODES (1998) (101)
Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection (2009) (100)
Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes (2004) (100)
Advances in mid-infrared detection and imaging: a key issues review (2014) (99)
Near bulk-limited R0A of long-wavelength infrared type-II InAs/GaSb superlattice photodiodes with polyimide surface passivation (2007) (96)
Demonstration of shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices (2012) (96)
AlxGa1−xN for solar-blind UV detectors (2001) (96)
Avalanche multiplication in AlGaN based solar-blind photodetectors (2005) (96)
Room temperature continuous wave, monolithic tunable THz sources based on highly efficient mid-infrared quantum cascade lasers (2016) (96)
InAs/InAs1−xSbx type-II superlattices for high performance long wavelength infrared detection (2014) (96)
Highly temperature insensitive quantum cascade lasers (2010) (94)
Room temperature single-mode terahertz sources based on intracavity difference-frequency generation in quantum cascade lasers (2011) (94)
Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K (2008) (93)
Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN (2007) (93)
A crystallographic model of (00⋅1) aluminum nitride epitaxial thin film growth on (00⋅1) sapphire substrate (1994) (88)
Recent advances in mid infrared (3-5µm) Quantum Cascade Lasers (2013) (88)
Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm (2002) (88)
High-power continuous-wave operation of a 6 μm quantum-cascade laser at room temperature (2003) (88)
Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors (2004) (88)
AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition (2010) (87)
High quality aluminum nitride epitaxial layers grown on sapphire substrates (1994) (86)
High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices (2010) (86)
Growth of Ga0.47In0.53As‐InP quantum wells by low pressure metalorganic chemical vapor deposition (1983) (86)
Band-gap narrowing and potential fluctuation in Si-doped GaN (1999) (85)
Lateral epitaxial overgrowth of GaN films on sapphire and silicon substrates (1999) (85)
Continuous operation of a monolithic semiconductor terahertz source at room temperature (2014) (83)
Passivation of type-II InAs∕GaSb double heterostructure (2007) (83)
Two‐dimensional electron gas in a In0.53Ga0.47As‐InP heterojunction grown by metalorganic chemical vapor deposition (1982) (83)
Growth of AlxGa1−xN:Ge on sapphire and silicon substrates (1995) (82)
High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices (2016) (82)
Ga/sub 0.51/In/sub 0.49/P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures (1990) (81)
High-performance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range (2001) (81)
On the performance and surface passivation of type II InAs∕GaSb superlattice photodiodes for the very-long-wavelength infrared (2005) (81)
High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAs∕InGaAs∕InAlAs∕InP quantum dot infrared photodetector (2007) (81)
Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates (1994) (80)
High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition (2004) (80)
Quantum dot infrared photodetectors: Comparison of experiment and theory (2005) (80)
Low pressure metalorganic chemical vapor deposition of InP and related compounds (1983) (80)
High power broad area quantum cascade lasers (2009) (79)
Photovoltaic effects in GaN structures with p‐n junctions (1995) (79)
Sampled grating, distributed feedback quantum cascade lasers with broad tunability and continuous operation at room temperature (2012) (78)
Thermal stability of GaN thin films grown on (0001) Al2O3, (011̄2) Al2O3 and (0001)Si 6H‐SiC substrates (1994) (78)
High-power, continuous-operation intersubband laser for wavelengths greater than 10 μm (2007) (77)
High power quantum cascade lasers (2009) (77)
Surface leakage reduction in narrow band gap type-II antimonide-based superlattice photodiodes (2009) (76)
Technology of Quantum Devices (2009) (76)
Long‐wavelength InAsSb photoconductors operated at near room temperatures (200–300 K) (1996) (76)
Bragg reflectors (1992) (76)
Passivation of type II InAs/GaSb superlattice photodiodes (2003) (75)
Fabrication of indium bumps for hybrid infrared focal plane array applications (2004) (74)
Background Limited Performance of Long Wavelength Infrared Focal Plane Arrays Fabricated From M-Structure InAs–GaSb Superlattices (2009) (74)
Optoelectronic Devices: III Nitrides (2004) (74)
Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range (1997) (73)
Kinetics of photoconductivity in n‐type GaN photodetector (1995) (73)
Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes (2003) (72)
Band edge tunability of M-structure for heterojunction design in Sb based type II superlattice photodiodes (2008) (72)
Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes (2010) (71)
Back-illuminated separate absorption and multiplication GaN avalanche photodiodes (2008) (70)
High power, continuous wave, room temperature operation of λ ∼ 3.4 μm and λ ∼ 3.55 μm InP-based quantum cascade lasers (2012) (70)
320×256 solar-blind focal plane arrays based on AlxGa1−xN (2005) (70)
Watt level performance of quantum cascade lasers in room temperature continuous wave operation at λ∼3.76 μm (2010) (70)
Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111) (2013) (69)
Growth and Characterization of Long-Wavelength Infrared Type-II Superlattice Photodiodes on a 3-in GaSb Wafer (2011) (69)
A new transport regime in the quantum Hall effect (1997) (68)
Room-temperature continuous-wave operation of quantum-cascade lasers at λ∼4μm (2006) (68)
8–13 μm InAsSb heterojunction photodiode operating at near room temperature (1995) (65)
High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection (2014) (65)
Bias-selectable dual-band mid-/long-wavelength infrared photodetectors based on InAs/InAs1−xSbx type-II superlattices (2015) (65)
Beam steering in high-power CW quantum-cascade lasers (2005) (64)
Widely tunable room temperature semiconductor terahertz source (2014) (63)
Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate (2009) (62)
Room-temperature continuous wave operation of distributed feedback quantum cascade lasers with watt-level power output (2010) (62)
GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications (1981) (62)
High-power λ∼9.5μm quantum-cascade lasers operating above room temperature in continuous-wave mode (2006) (62)
High differential resistance type-II InAs∕GaSb superlattice photodiodes for the long-wavelength infrared (2006) (62)
Delta-doping optimization for high quality p-type GaN (2008) (62)
A hybrid green light-emitting diode comprised of n-ZnO/ "InGaN/GaN… multi-quantum-wells/p-GaN (2008) (61)
Aluminum gallium nitride short-period superlattices doped with magnesium (1999) (60)
Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices (2013) (59)
Widely tuned room temperature terahertz quantum cascade laser sources based on difference-frequency generation (2012) (59)
Comparison of the physical properties of GaN thin films deposited on (0001) and (011̄2) sapphire substrates (1993) (59)
Metalorganic chemical vapor deposition of monocrystalline GaN thin films on β‐LiGaO2 substrates (1996) (59)
Very long wavelength infrared type-II detectors operating at 80 K (2000) (58)
Beryllium compensation doping of InAs∕GaSb infrared superlattice photodiodes (2007) (58)
Pulse autocorrelation measurements based on two- and three-photon conductivity in a GaN photodiode (1999) (57)
Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire (2002) (57)
Improved performance of quantum cascade lasers through a scalable, manufacturable epitaxial-side-down mounting process. (2006) (57)
Gain and recombination dynamics of quantum-dot infrared photodetectors (2006) (55)
III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz (2011) (54)
Capacitance-voltage investigation of high-purity InAs∕GaSb superlattice photodiodes (2006) (54)
Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates (2010) (53)
Growth and characterization of InSbBi for long wavelength infrared photodetectors (1997) (53)
Optical investigations of GaAs‐GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition (1991) (52)
Electrically pumped photonic crystal distributed feedback quantum cascade lasers (2007) (52)
Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices (2017) (52)
First observation of the quantum Hall effect in a Ga0.47In0.53As‐InP heterostructure with three electric subbands (1986) (52)
High power frequency comb based on mid-infrared quantum cascade laser at λ ∼ 9 μm (2015) (51)
High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal–organic chemical–vapor deposition (2005) (51)
Geiger-mode operation of back-illuminated GaN avalanche photodiodes (2007) (51)
Room temperature terahertz quantum cascade laser sources with 215 μW output power through epilayer-down mounting (2013) (51)
Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices (2003) (51)
Quantum-cascade lasers operating in continuous-wave mode above 90°C at λ∼5.25μm (2006) (50)
High-power continuous-wave operation of quantum-cascade lasers up to 60/spl deg/C (2004) (50)
Ultraviolet detectors for astrophysics: present and future (1995) (50)
Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition (1997) (50)
High brightness angled cavity quantum cascade lasers (2015) (50)
Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure (1983) (49)
Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type δ-doping (2008) (49)
Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes (2010) (48)
Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111) (2013) (48)
Extremely high electron mobility in a GaAs‐GaxIn1−xP heterostructure grown by metalorganic chemical vapor deposition (1989) (47)
MOLECULAR BEAM EPITAXIAL GROWTH OF HIGH QUALITY INSB (1994) (47)
High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition (2006) (46)
ZnO 3D flower-like nanostructure synthesized on GaN epitaxial layer by simple route hydrothermal process (2008) (46)
High power, continuous wave, quantum cascade ring laser (2011) (46)
Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures (2011) (46)
Broad area photonic crystal distributed feedback quantum cascade lasers emitting 34 W at λ∼4.36 μm (2010) (46)
A review of the growth, doping, and applications of β-Ga2O3 thin films (2018) (45)
Room temperature terahertz semiconductor frequency comb (2019) (45)
Demonstration of high performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices (2013) (45)
III-Nitride wide bandgap semiconductors : a survey of the current status and future trends of the material and device technology (2000) (45)
Very high average power at room temperature from λ≈5.9-μm quantum-cascade lasers (2003) (45)
In situ investigation of the low‐pressure metalorganic chemical vapor deposition of lattice‐mismatched semiconductors using reflectance anisotropy measurements (1990) (45)
High-power, continuous-wave operation of distributed-feedback quantum-cascade lasers at λ∼7.8μm (2006) (45)
The MOCVD Challenge: A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications, Second Edition (2010) (45)
Short wavelength (/spl lambda//spl sim/4.3 /spl mu/m) high-performance continuous-wave quantum-cascade lasers (2005) (45)
Fabrication of GaN nanotubular material using MOCVD with an aluminium oxide membrane (2006) (44)
Ridge-width dependence on high-temperature continuous-wave quantum-cascade laser operation (2004) (44)
Room-temperature, high-power, and continuous-wave operation of distributed-feedback quantum-cascade lasers at λ∼9.6μm (2006) (44)
Uncooled InAs-GaSb type-II infrared detectors grown on GaAs substrates for the 8-12-/spl mu/m atmospheric window (1999) (44)
Low-temperature investigations of the quantum Hall effect in In x Ga 1 − x A s − I n P heterojunctions (1983) (43)
Extended short-wavelength infrared nBn photodetectors based on type-II InAs/AlSb/GaSb superlattices with an AlAsSb/GaSb superlattice barrier (2017) (43)
Gas-source molecular beam epitaxy growth of an 8.5 μm quantum cascade laser (1997) (43)
An accurate method to check chemical interfaces of epitaxial III-V compounds (1982) (43)
Very high purity InP epilayer grown by metalorganic chemical vapor deposition (1988) (42)
Elimination of surface leakage in gate controlled type-II InAs/GaSb mid-infrared photodetectors (2011) (42)
Comparison of trimethylgallium and triethylgallium for the growth of GaN (1997) (42)
Cubic Phase GaN on Nano‐grooved Si (100) via Maskless Selective Area Epitaxy (2014) (42)
Anomalous Hall effect in InSb layers grown by metalorganic chemical vapor deposition on GaAs substrates (1993) (41)
High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1−xSbx superlattices (2015) (41)
Study of Au coated ZnO nanoarrays for surface enhanced Raman scattering chemical sensing (2017) (41)
InGaP/InGaAsP/GaAs 0.808 /spl mu/m separate confinement laser diodes grown by metalorganic chemical vapor deposition (1994) (41)
LASERS, OPTICS, AND OPTOELECTRONICS 2737 Actively mode-locked erbium fiber ring laser using a Fabry-Perot semiconductor modulator as mode locker and tunable filter (1999) (41)
Long Wavelength Infrared Detectors (1997) (41)
Extended electrical tuning of quantum cascade lasers with digital concatenated gratings (2013) (41)
Recent progress of quantum cascade laser research from 3 to 12 μm at the Center for Quantum Devices [Invited]. (2017) (40)
High-performance type-II InAs/GaSb superlattice photodiodes with cutoff wavelength around 7 μm (2005) (40)
High-performance quantum cascade lasers (λ∼11 μm) operating at high temperature (T ⩾425 K) (2001) (40)
High quantum efficiency two color type-II InAs∕GaSb n-i-p-p-i-n photodiodes (2008) (40)
Ultra-broadband quantum cascade laser, tunable over 760 cm(-1), with balanced gain. (2015) (40)
Photoconductance measurements on InTlSb/InSb/GaAs grown by low-pressure metalorganic chemical vapor deposition (1994) (40)
InSb infrared photodetectors on Si substrates grown by molecular beam epitaxy (1996) (40)
High-Performance Focal Plane Array Based on InAs–GaSb Superlattices With a 10-$\mu{\hbox {m}}$ Cutoff Wavelength (2008) (39)
Monolithically, widely tunable quantum cascade lasers based on a heterogeneous active region design (2016) (39)
GaN avalanche photodiodes grown on m-plane freestanding GaN substrate (2010) (39)
AlxGa1−xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate (2013) (39)
Recent advances in MOCVD growth of InxGa1-xAsyP1-y alloys (1984) (38)
High-power laser diodes based on InGaAsP alloys (1994) (38)
LASERS, OPTICS, AND OPTOELECTRONICS 397 Near-field optical spectroscopy using an incoherent light source (2000) (38)
High-power (?~9 m) quantum cascade lasers (2002) (38)
High quality type II InAs/GaSb superlattices with cutoff wavelength ∼3.7 μm using interface engineering (2003) (38)
Future of AlxGa1-xN materials and device technology for ultraviolet photodetectors (2002) (38)
Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature (2010) (38)
Scaling in back-illuminated GaN avalanche photodiodes (2007) (38)
Long-term reliability of Al-free InGaAsP/GaAs (λ=808 nm) lasers at high-power high-temperature operation (1997) (38)
1.2-1.6 μm GaxIn1-xAsyP1-y-InP DH lasers grown by LPMOCVD (1984) (38)
Photonic crystal distributed feedback quantum cascade lasers with 12 W output power (2009) (37)
Long-wavelength type-II photodiodes operating at room temperature (2001) (37)
High performance terahertz quantum cascade laser sources based on intracavity difference frequency generation. (2013) (37)
Effect of contact doping in superlattice-based minority carrier unipolar detectors (2011) (36)
High performance GaAs/GaInP heterostructure bipolar transistors grown by low-pressure metal-organic chemical vapour deposition (1990) (36)
Type-II superlattice dual-band LWIR imager with M-barrier and Fabry-Perot resonance. (2011) (36)
The effect of doping the M-barrier in very long-wave type-II InAs /GaSb heterodiodes (2008) (35)
Angled cavity broad area quantum cascade lasers (2012) (35)
Effect masses and non-parabolicity in GaxIn1-xAs (1985) (35)
First observation of the two‐dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition (1986) (34)
High power operation of λ ∼ 5.2–11 μm strain balanced quantum cascade lasers based on the same material composition (2014) (34)
High-Performance Continuous-Wave Operation of $\lambda \sim {\hbox {4.6}}~\mu{\hbox {m}}$ Quantum-Cascade Lasers Above Room Temperature (2008) (34)
Highly selective two-color mid-wave and long-wave infrared detector hybrid based on Type-II superlattices. (2012) (34)
Recent Advances in LWIR Type-II InAs/GaSb Superlattice Photodetectors and Focal Plane Arrays at the Center for Quantum Devices (2008) (34)
First GaInAsP‐InP double‐heterostructure laser emitting at 1.27 μm on a silicon substrate (1988) (33)
Background-limited long wavelength infrared InAs/InAs1−xSbx type-II superlattice-based photodetectors operating at 110 K (2017) (33)
Mid-wavelength infrared high operating temperature pBn photodetectors based on type-II InAs/InAsSb superlattice (2020) (33)
High-average-power, high-duty-cycle (λ∼6 μm) quantum cascade lasers (2002) (33)
Stranski–Krastanov growth of InGaN quantum dots emitting in green spectra (2009) (32)
Growth of In1−xTlxSb, a new infrared material, by low‐pressure metalorganic chemical vapor deposition (1993) (32)
High Operability 1024$\,\times\,$1024 Long Wavelength Type-II Superlattice Focal Plane Array (2012) (32)
Band gap tunability of Type II Antimonide-based superlattices (2010) (32)
DETAILED ANALYSIS OF CARRIER TRANSPORT IN INAS0.3SB0.7 LAYERS GROWN ON GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR DEPOSITION (1994) (32)
Disorder of a GaxIn1-xAsyP1-y-InP quantum well by Zn diffusion (1987) (32)
Recent Advances in Room Temperature, High-Power Terahertz Quantum Cascade Laser Sources Based on Difference-Frequency Generation (2016) (32)
GaInN/GaN multi-quantum well laser diodes grown by low-pressure metalorganic chemical vapor deposition (1998) (32)
Impact of scaling base thickness on the performance of heterojunction phototransistors (2017) (31)
Defects in organometallic vapor-phase epitaxy-grown GaInP layers (1991) (31)
Al(x)Ga(1-x)N-based deep-ultraviolet 320×256 focal plane array. (2012) (31)
Quantum oscillations at a Ga0.47In0.53AsInP heterojunction interface (1982) (31)
Growth of GaInAs‐InP multiquantum wells on garnet (GGG=Gd3Ga5O12) substrate by metalorganic chemical vapor deposition (1986) (31)
Comparison of ZnO nanostructures grown using pulsed laser deposition, metal organic chemical vapor deposition, and physical vapor transport (2009) (31)
Substrate removal for high quantum efficiency back side illuminated type-II InAs∕GaSb photodetectors (2007) (30)
High-quality GaInAsP/InP heterostructures grown by low-pressure metalorganic chemical vapor deposition on silicon substrates (1988) (30)
Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes (2011) (30)
Crack-free AlGaN for solar-blind focal plane arrays through reduced area epitaxy (2013) (30)
Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low‐pressure metalorganic chemical vapor deposition (1996) (30)
Noise performance of InGaAs-InP quantum-well infrared photodetectors (1998) (30)
Second harmonic generation in hexagonal silicon carbide (1995) (30)
Current status and future trends of infrared detectors (1998) (29)
Phase-matched optical second-harmonic generation in GaN and AlN slab waveguides (1999) (29)
Improved performance of IR photodetectors with 3D gap engineering (1995) (29)
Type II InAs/GaSb superlattices for high-performance photodiodes and FPAs (2003) (29)
Investigation of the heteroepitaxial interfaces in the GaInP/GaAs superlattices by high‐resolution x‐ray diffractions and dynamical simulations (1993) (29)
Optimizing facet coating of quantum cascade lasers for low power consumption (2011) (29)
Low pressure‐MOCVD growth of Ga0.47In0.53As–InP heterojunction and superlattices (1983) (29)
Two-dimensional magnetophonon resonance. I. GaInAs-InP superlattices (1983) (28)
Generation-recombination and trap-assisted tunneling in long wavelength infrared minority electron unipolar photodetectors based on InAs/GaSb superlattice (2014) (28)
nBn extended short-wavelength infrared focal plane array. (2018) (28)
Persistent photoconductivity and the quantized Hall effect in In0.53Ga0.47As/InP heterostructures (1984) (28)
High‐quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low‐pressure metalorganic chemical vapor deposition (1988) (28)
Shortwave quantum cascade laser frequency comb for multi-heterodyne spectroscopy (2018) (28)
Transport and photodetection in self-assembled semiconductor quantum dots (2005) (28)
InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition (1999) (28)
Antimonide-Based Type II Superlattices: A Superior Candidate for the Third Generation of Infrared Imaging Systems (2014) (28)
Low-threshold 7.3 μm quantum cascade lasers grown by gas-source molecular beam epitaxy (1999) (27)
Room temperature operation of 8–12 μm InSbBi infrared photodetectors on GaAs substrates (1998) (27)
Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions (2009) (27)
Two‐dimensional electron gases in quantum well and superlattices of Ga0.25In0.75As0.50P0.50/InP heterostructures grown by low pressure metalorganic chemical vapor deposition (1985) (27)
Low-threshold and high power λ∼9.0 μm quantum cascade lasers operating at room temperature (2000) (27)
Mid-wavelength infrared heterojunction phototransistors based on type-II InAs/AlSb/GaSb superlattices (2016) (27)
Strain-Induced Metastable Phase Stabilization in Ga2O3 Thin Films. (2019) (27)
InAsSbP-InAsSb-InAs diode lasers emitting at 3.2 /spl mu/m grown by metal-organic chemical vapor deposition (1997) (26)
High efficiency quantum cascade laser frequency comb (2017) (26)
Demonstration of high performance long wavelength infrared type II InAs/GaSb superlattice photodiode grown on GaAs substrate (2009) (26)
cw operation of 1.57‐μm GaxIn1−xAsyP1−yInP distributed feedback lasers grown by low‐pressure metalorganic chemical vapor deposition (1984) (26)
Sandwich method to grow high quality AlN by MOCVD (2018) (25)
Quantum Hall liquid-to-insulator transition in In 1 − x Ga x As/InPt heterostructures (1997) (25)
Planar monolithic integrated photoreceiver for 1.3–1.55 μm wavelength applications using GaInAs‐GaAs heteroepitaxies (1986) (25)
Demonstration of 256 x 256 focal plane array based on Al-free GaInAs-InP QWIP (2003) (25)
Reliability of strain-balanced Ga0.331In0.669As∕Al0.659In0.341As∕InP quantum-cascade lasers under continuous-wave room-temperature operation (2006) (25)
Optoelectronic devices based on III-V compound semiconductors which have made a major scientific and technological impact in the past 20 years (2000) (25)
Characteristics of high-quality p-type AlxGa1−xN/GaN superlattices (2002) (25)
Photovoltaic MWIR Type-II Superlattice Focal Plane Array on GaAs Substrate (2010) (25)
Type II superlattice photodetectors for MWIR to VLWIR focal plane arrays (2006) (25)
High quantum efficiency mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodiodes grown by metal-organic chemical vapor deposition (2019) (24)
High‐purity GaAs layers grown by low‐pressure metalorganic chemical vapor deposition (1989) (24)
Intermixing of GaInP/GaAs multiple quantum wells (1993) (24)
Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high operation temperature application. (2015) (24)
Type–II superlattices base visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor (2019) (23)
Tunability of intersubband absorption from 4.5 to 5.3 μm in a GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition (2009) (23)
Room‐temperature excitons in Ga0.47In0.53As‐InP superlattices grown by low‐pressure metalorganic chemical vapor deposition (1986) (23)
Very low threshold buried ridge structure lasers emitting at 1.3 μm grown by low pressure metalorganic chemical vapor deposition (1985) (23)
TEG in LP-MO CVD Ga0.47In0.53As-InP superlattice (1982) (23)
Aluminum free GaInP/GaAs quantum well infrared photodetectors for long wavelength detection (1997) (23)
Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors (2012) (23)
Reflectance anisotropy investigation of the metalorganic chemical‐vapor deposition of III‐V heterojunctions (1991) (23)
Gain and recombination dynamics in photodetectors made with quantum nanostructures: The quantum dot in a well and the quantum well (2008) (23)
High-performance InP-based midinfrared quantum cascade lasers at Northwestern University (2010) (23)
A review of III-nitride research at the Center for Quantum Devices (2009) (23)
Two-dimensional magnetophonon resonance in GaInAs-InP and GaInAs-AlInAs heterojunctions and superlattices (1984) (23)
Recent advances in InAs/InAs1-xSbx/AlAs1-xSbx gap-engineered type-II superlattice-based photodetectors (2017) (23)
Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors (1991) (23)
Cyclotron resonance and polaron effects in a two-dimensional electron gas in GaInAs (1984) (22)
The molecular beam epitaxial growth of InSb on (111)B GaAs (1996) (22)
Active and passive infrared imager based on short-wave and mid-wave type-II superlattice dual-band detectors. (2013) (22)
Very low threshold GaInAsP/InP double-heterostructure lasers grown by LP MOCVD (1983) (22)
High-quantum-efficiency solar-blind photodetectors (2004) (22)
High performance monolithic, broadly tunable mid-infrared quantum cascade lasers (2017) (22)
The MOCVD Challenge. Volume 1: A Survey of GaInAsP — InP for Photonic and Electronic Applications. Adam Hilger, Bristol and Philadelphia, 1989, 328 Seiten, zahlreiche Abbildungen und Tabellen, 386 Quellennachweise, Preis: 65.00 £ ISBN 0‐85274‐161‐8 (1989) (21)
High-temperature continuous-wave operation of ?~8 m quantum cascade lasers (1999) (21)
cw phase‐locked array Ga0.25In0.75As0.5P0.5‐InP high power semiconductor laser grown by low‐pressure metalorganic chemical vapor deposition (1987) (21)
In situ investigation of InAs metalorganic chemical vapor deposition growth using reflectance anisotropy (1990) (21)
Transport properties in n‐type InSb films grown by metalorganic chemical vapor deposition (1993) (21)
OPTIMIZED STRUCTURE FOR INGAASP/GAAS 808 NM HIGH POWER LASERS (1995) (21)
InGaAs photodiodes prepared by low-pressure MOCVD (1985) (21)
InAsSbP/InAsSb/InAs laser diodes (λ=3.2 μm) grown by low-pressure metal–organic chemical-vapor deposition (1997) (21)
Semiconductor ultraviolet photodetectors (1996) (20)
Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire (2013) (20)
Reliability of aluminum‐free 808 nm high‐power laser diodes with uncoated mirrors (1995) (20)
Photoluminescence Study of GaN (1995) (20)
Comprehensive study of blue and green multi-quantum-well light-emitting diodes grown on conventional and lateral epitaxial overgrowth GaN (2009) (20)
Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice (2021) (20)
Temperature dependence of threshold current density Jth and differential efficiency ηd of high‐power InGaAsP/GaAs (λ=0.8 μm) lasers (1995) (20)
Growth of GaN without yellow luminescence (1995) (20)
High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 μm (1999) (20)
Optical losses of Al-free lasers for λ=0.808 and 0.98 μm (1996) (19)
A high quantum efficiency GaInAs‐InP photodetector‐on‐silicon substrate (1989) (19)
High quantum efficiency back-illuminated GaN avalanche photodiodes (2008) (19)
Type-II superlattice-based extended short-wavelength infrared focal plane array with an AlAsSb/GaSb superlattice etch-stop layer to allow near-visible light detection. (2017) (19)
Relaxation kinetics in quantum cascade lasers (1999) (19)
Electron transport properties of Ga/sub 0.51/In/sub 0.49/P for device applications (1994) (19)
Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire substrate by MOCVD (2019) (19)
Low-threshold distributed feedback lasers fabricated on material grown completely by LP-MOCVD (1985) (19)
Type-II InAs/GaSb superlattices and detectors with λc >18μm (2002) (19)
High-performance type-II InAs/GaSb superlattice photodiodes (2001) (19)
Modeling of hydrogen diffusion in p-type GaAs:Zn (1991) (19)
Demonstration of mid-wavelength infrared nBn photodetectors based on type-II InAs/InAs1-xSbx superlattice grown by metal-organic chemical vapor deposition (2019) (19)
Noise analysis in type-II InAs/GaSb focal plane arrays (2009) (19)
High-power, continuous-wave, phase-locked quantum cascade laser arrays emitting at 8 µm. (2019) (19)
Thermal analysis of buried heterostructure quantum cascade lasers for long‐wavelength infrared emission using 2D anisotropic heat‐dissipation model (2009) (18)
Room‐temperature operation of InTlSb infrared photodetectors on GaAs (1996) (18)
High-performance, continuous-wave quantum-cascade lasers operating up to 85°C at λ∼8.8 μm (2008) (18)
Negative differential resistance at room temperature from resonant tunnelling in GaInAs/InP double-barrier heterostructures (1987) (18)
High power InAsSb/InPAsSb/InAs mid-infrared lasers (1997) (18)
Monolayer epitaxy of III‐V compounds by low‐pressure metalorganic chemical vapor deposition (1987) (18)
Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy (2017) (18)
High carrier lifetime InSb grown on GaAs substrates (1997) (18)
Novel Sb-based materials for uncooled infrared photodetector applications (2000) (18)
Monolithic integration of a short‐length GaInAs photoconductor with a GaAs/GaAlAs optical waveguide on a GaAs semi‐insulating substrate (1988) (18)
Very high performance LWIR and VLWIR Type-II InAs/GaSb superlattice photodiodes with M-structure barrier (2008) (18)
In situ characterization by reflectance difference spectroscopy of III-V materials and heterojunctions grown by low pressure metal organic chemical vapour deposition (1990) (18)
Cavity-length effects of high-temperature high-power continuous-wave characteristics in quantum-cascade lasers (2003) (18)
First room‐temperature cw operation of a GaInAsP/InP light‐emitting diode on a silicon substrate (1988) (18)
The Quantum Cascade Laser: A Versatile and Powerful Tool (2008) (18)
ZnO thin film templates for GaN-based devices (2005) (18)
High‐power InGaAsP/GaAs 0.8‐μm laser diodes and peculiarities of operational characteristics (1994) (17)
Recent advances in InAs/GaSb superlattices for very long wavelength infrared detection (2003) (17)
High-power CW quantum cascade lasers: How short can we go? (2005) (17)
AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applications (2001) (17)
Optical coatings by ion-beam sputtering deposition for long-wave infrared quantum cascade lasers (2006) (17)
Development of quantum well infrared photodetectors at the center for quantum devices (2001) (17)
Room temperature operation of InxGa1-xSb/InAs type-II quantum well infrared photodetectors grown by MOCVD (2018) (17)
Type-II antimonide-based superlattices for the third generation infrared focal plane arrays (2010) (17)
High power continuous operation of a widely tunable quantum cascade laser with an integrated amplifier (2015) (17)
Broadband linearly polarized beat-wave TE/sub m1//TE/sub 11/ mode converters (1996) (17)
Persistent photoconductivity in Ga0.49In0.51P/GaAs heterojunctions (1989) (17)
OBSERVATION OF ROOM TEMPERATURE SURFACE-EMITTING STIMULATED EMISSION FROM GAN:GE BY OPTICAL PUMPING (1996) (17)
LETTER TO THE EDITOR: The first fabrication of n- and p-type Ga0.49In0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD (1990) (17)
Comparison of type-II superlattice and HgCdTe infrared detector technologies (2007) (17)
Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward high fill factor focal plane arrays (2009) (17)
Quantum sensing using Type II InAs/GaSb superlattice for infrared detection (2003) (16)
Current status and potential of high-power mid-infrared intersubband lasers (2010) (16)
On the interface properties of ZnO/Si electroluminescent diodes (2010) (16)
Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by pulsed laser deposition (2006) (16)
AlxGa1-xN-Based Materials and Heterostructures (1996) (16)
Long-wavelength infrared photodetectors based on InSbBi grown on GaAs substrates (1997) (16)
Dark current reduction in microjunction-based double electron barrier type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors (2017) (16)
First observation of two‐dimensional hole gas in a Ga0.47In0.53As/InP heterojunction grown by metalorganic vapor deposition (1986) (15)
Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer (2016) (15)
Aging test of MOCVD shallow proton stripe GaInAsP/InP, DH laser diode emitting at 1.5 μm (1983) (15)
Single-mode, high-power, mid-infrared, quantum cascade laser phased arrays (2018) (15)
Optical investigations of GaAs‐GaInP quantum wells grown on the GaAs, InP, and Si substrates (1992) (15)
Investigation of impurities in type-II InAs/GaSb superlattices via capacitance-voltage measurement (2013) (15)
High magnetic field studies of the two-dimensional electron gas in GaInAs-InP superlattices (1983) (15)
InGaAlAs-InP quantum-well infrared photodetectors for 8-20-/spl mu/m wavelengths (1998) (15)
High Operability 1024×1024 Long Wavelength Infrared Focal Plane Array Base on Type‐II InAs/GaSb Superlattice (2011) (15)
Low irradiance background limited type-II superlattice MWIR M-barrier imager. (2012) (15)
Very high transconductance InGaAs/InP junction field-effect transistor with submicrometer gate (1987) (15)
World's first demonstration of type-II superlattice dual band 640x512 LWIR focal plane array (2012) (15)
Extended short wavelength infrared heterojunction phototransistors based on type II superlattices (2019) (15)
AlGaN ultraviolet detectors (1997) (14)
EXPLORATION OF INSBBI FOR UNCOOLED LONG-WAVELENGTH INFRARED PHOTODETECTORS (1998) (14)
Molecular‐beam epitaxial growth of high quality InSb for p‐i‐n photodetectors (1995) (14)
Materials characterization of n - ZnO / p - GaN : Mg / c - Al2O3 UV LEDs grown by pulsed laser deposition and metal–organic chemical vapor deposition (2007) (14)
High-operating temperature MWIR photon detectors based on Type II InAs/GaSb superlattice (2011) (14)
1.5 μm room-temperature pulsed operation of gainasp/inp double heterostructure grown by lp mocvd (1981) (14)
InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection (2016) (14)
Growth and characterization of type-II nonequilibrium photovoltaic detectors for long-wavelength infrared range (2000) (14)
The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications (2013) (14)
Infrared detection from GaInAs/InP nanopillar arrays (2005) (14)
Photoluminescence characteristics of polar and nonpolar AlGaN/GaN superlattices (2010) (14)
Influence of residual impurity background on the nonradiative recombination processes in high purity InAs∕GaSb superlattice photodiodes (2006) (14)
High yield manufacture of very low threshold, high reliability, 1.30-µm buried heterostructure laser diodes grown by metal organic chemical vapor deposition (1986) (14)
Type-II superlattices and quantum cascade lasers for MWIR and LWIR free-space communications (2008) (14)
The MOCVD Challenge: Volume 2: A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications (1995) (14)
Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition (2009) (13)
High power aluminium-free InGaAsP/GaAs pumping diode lasers (1995) (13)
Well resolved room‐temperature photovoltage spectra of GaAs‐GaInP quantum wells and superlattices (1993) (13)
InP-Based Quantum-Dot Infrared Photodetectors With High Quantum Efficiency and High-Temperature Imaging (2008) (13)
Evaluating the size-dependent quantum efficiency loss in a SiO2-Y2O3 hybrid gated type-II InAs/GaSb long-infrared photodetector array (2014) (13)
Frequency shifted polaron coupling in GaInAs heterostructures (1986) (13)
High power, low divergent, substrate emitting quantum cascade ring laser in continuous wave operation (2017) (13)
Investigations of ZnO Thin Films Grown on c-Al2O3 By Pulsed Laser Deposition in N2 + O2 Ambient (2008) (13)
State-of-the-art Type II antimonide-based superlattice photodiodes for infrared detection and imaging (2009) (13)
Optoelectronic devices (2004) (13)
Effect of sidewall surface recombination on the quantum efficiency in a Y2O3 passivated gated type-II InAs/GaSb long-infrared photodetector array (2013) (13)
Planar nBn type-II superlattice mid-wavelength infrared photodetectors using zinc ion-implantation (2020) (13)
Investigation of InAsSb infrared photodetectors for near room temperature operation (1998) (13)
Suppressing Spectral Crosstalk in Dual-Band Long- Wavelength Infrared Photodetectors With Monolithically Integrated Air-Gapped Distributed Bragg Reflectors (2019) (13)
Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice (2021) (13)
Phase-locked, high power, mid-infrared quantum cascade laser arrays (2018) (13)
Photodetectors: Materials and Devices III (1996) (13)
Shallow donor spectroscopy and polaron coupling in Ga0.47In0.53As (1985) (12)
Electro-optical modulators using novel buried waveguides in GaInAsP/InP material (1988) (12)
Negative luminescence of long-wavelength InAs∕GaSb superlattice photodiodes (2005) (12)
Study of Phase Transition in MOCVD Grown Ga2O3 from κ to β Phase by Ex Situ and In Situ Annealing (2021) (12)
Very high quality p-type AlxGa1−xN/GaN superlattice (2003) (12)
Deep ultraviolet light-emitting diodes and photodetectors for UV communications (2005) (12)
Defects in high purity GaAs grown by low pressure metalorganic chemical vapour deposition (1991) (12)
Metalorganic chemical vapor deposition of undoped In1−xAlxAs on InP (1983) (12)
Fabrication of nanostructured heterojunction LEDs using self-forming moth eye type arrays of n-ZnO nanocones grown on p-si (111)substrates by pulsed laser deposition (2009) (12)
High detectivity GaInAs-InP quantum-well infrared photodetectors grown on Si substrates (2002) (12)
Dispersion compensated mid-infrared quantum cascade laser frequency comb with high power output (2017) (12)
INTERFACE ROUGHNESS SCATTERING IN THIN, UNDOPED GAINP/GAAS QUANTUM WELLS (1994) (12)
Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors (1998) (12)
Room temperature quantum cascade lasers with 22% wall plug efficiency in continuous-wave operation. (2020) (12)
Bias-selectable three-color short-, extended-short-, and mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices. (2017) (12)
MOCVD challenge for III-V semiconductor materials for photonic and electronic devices on alternative substrates (1988) (12)
Thin-Film Antimonide-Based Photodetectors Integrated on Si (2018) (12)
Quantum Sensing and Nanophotonic Devices VIII (2017) (12)
High performance Zn-diffused planar mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodetector by MOCVD (2020) (12)
Well width dependence of the carrier life time in InGaAs/InP quantum wells (1989) (11)
MOCVD grown β-Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire (2019) (11)
Injector doping level-dependent continuous-wave operation of InP-based QCLs at λ ∼ 7.3 µm above room temperature (2010) (11)
Room temperature cw operation of gainasp/inp double heterostructure diode lasers emitting at 1.5 μm grown by low pressure metalorganic chemical vapour deposition (lp-mo cvd) (1981) (11)
Multi-band SWIR-MWIR-LWIR Type-II superlattice based infrared photodetector (2021) (11)
Solar-blind AlxGa1-xN p-i-n photodetectors grown on LEO and non-LEO GaN (2000) (11)
High power, 0.98 μm, Ga0.8In0.2As/GaAs/Ga0.51In0.49P multiple quantum well laser (1992) (11)
Fabrication and characterization of novel hybrid green light emitting diodes based on substituting n-type ZnO for n-type GaN in an inverted p-n junction (2009) (11)
Electroluminescence of InAs-GaSb heterodiodes (2006) (11)
Observation of inversion layers at AlN-Si interfaces fabricated by metal organic chemical vapour deposition (1996) (11)
Room temperature quantum cascade laser with ∼31% wall-plug efficiency (2020) (11)
Simultaneous growth of two differently oriented GaN epilayers on (1 1 · 0) sapphire II. A growth model of (0 0 · 1) and (10 · 0) GaN (1998) (11)
RECENT ADVANCES IN SB-BASED MATERIALS FOR UNCOOLED INFRARED PHOTODETECTORS (1998) (11)
CW operation of GaInAsP buried ridge structure laser at 1.5 μm grown by LP-MOCVD (1984) (11)
320 × 256 infrared focal plane array based on type-II InAs/GaSb superlattice with a 12-&mgr;m cutoff wavelength (2007) (11)
Free-space optical communication using mid-infrared or solar-blind ultraviolet sources and detectors (2012) (11)
High power, electrically tunable quantum cascade lasers (2016) (11)
Monolithic integrated photoreceiver for 1.3–1.55‐μm wavelengths: Association of a Schottky photodiode and a field‐effect transistor on GaInP‐GaInAs heteroepitaxy (1988) (11)
High performance InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD (2005) (11)
Widely tunable single-mode high power quantum cascade lasers (2011) (10)
Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applications (2000) (10)
High performance InAs/InAsSb Type-II superlattice mid-wavelength infrared photodetectors with double barrier (2020) (10)
Properties of 2D quantum well lasers (1986) (10)
Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz (2018) (10)
III-nitride-based avalanche photo detectors (2010) (10)
Characterization of InTlSb/InSb Grown by Low Pressure Metalorganic Chemical Vapor Deposition on GaAs Substrate (1994) (10)
High-performance focal plane array based on type-II InAs/GaSb superlattice heterostructures (2008) (10)
Very high wall plug efficiency of quantum cascade lasers (2010) (10)
Surface Emitting, Tunable, Mid-Infrared Laser with High Output Power and Stable Output Beam (2019) (10)
280 nm UV LEDs grown on HVPE GAN substrates (2002) (10)
Two dimensional magnetophonon resonance in GaInAsInP superlattices (1983) (10)
Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates (2010) (10)
Antimonite-based gap-engineered type-II superlattice materials grown by MBE and MOCVD for the third generation of infrared imagers (2019) (10)
Theoretical investigation of minority carrier leakages of high-power 0.8 μm InGaAsP/InGaP/GaAs laser diodes (1994) (10)
An experimental test of two-parameter scaling of integral quantum Hall effect (1986) (10)
High brightness ultraviolet light-emitting diodes grown on patterned silicon substrate (2019) (10)
Nonequilibrium radiation of long-wavelength InAs∕GaSb superlattice photodiodes (2006) (9)
One-dimensional electronic systems in ultra-fine mesa etched InGaAs-InAlAs-InP quantum wires (1990) (9)
Type-II superlattice-based heterojunction phototransistors for high speed applications (2020) (9)
Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface (2017) (9)
Fabrication of 12 µm pixel-pitch 1280 × 1024 extended short wavelength infrared focal plane array using heterojunction type-II superlattice-based photodetectors (2019) (9)
High-Quality InSb Growth on GaAs and Si by Low-Pressure Metalorganic Chemical Vapor Deposition (1992) (9)
A study into the impact of sapphire substrate orientation on the properties of nominally-undoped β-Ga2O3 thin films grown by pulsed laser deposition (2017) (9)
High speed antimony-based superlattice photodetectors transferred on sapphire (2019) (9)
Back-illuminated solar-blind photodetectors for imaging applications (2005) (9)
High-power electrically injected mid-infrared interband lasers grown by LP-MOCVD (2000) (9)
Growth and characterization of very long wavelength type-II infrared detectors (2000) (9)
Avalanche Photodetector Based on InAs/InSb Superlattice (2020) (9)
Exciton localization in group-iii nitride quantum wells (1999) (9)
Quantum Sensing and Nano Electronics and Photonics XIII (2016) (9)
High-performance bias-selectable dual-band mid-/long-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb Type-II superlattices (2013) (8)
High-power mid- and far wavelength infrared lasers for free space communication (2007) (8)
Spatial Noise and Correctability of Type-II InAs/GaSb Focal Plane Arrays (2010) (8)
Pressure dependence study of the effective mass in Ga0.47In0.53As/InP heterojunctions (1988) (8)
Solar-blind photodetectors and focal plane arrays based on AlGaN (2015) (8)
LETTER TO THE EDITOR: The effect of hydrostatic pressure on a Ga0.47In0.53As/InP heterojunction with three electric sub-bands (1986) (8)
Quantum cascade laser progress and outlook (2004) (8)
Low threshold GaInAsP/InP lasers with good temperature dependence grown by low pressure MOVPE (1981) (8)
The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the M-structure barrier (2009) (8)
Quantum Dot Infrared Photodetectors (2010) (8)
MOCVD growth of ZnO nanostructures using Au droplets as catalysts (2008) (8)
LETTER TO THE EDITOR: MOMBE growth of high-quality InP and GaInAs bulk, heterojunction and quantum well layers (1990) (8)
High Resolution X-ray Diffraction of GaN Grown on Sapphire Substrates (1996) (8)
Tl incorporation in InSb and lattice contraction of In1−xTlxSb (2000) (8)
First observation of quantum Hall effect in a GaInAsP-InP heterostructure grown by metalorganic vapor deposition (1987) (8)
Advanced monolithic quantum well infrared photodetector focal plane array integrated with silicon readout integrated circuit (2005) (8)
Review of III‐nitride optoelectronic materials for light emission and detection (2004) (8)
High-power continuous-wave mid-infrared quantum cascade lasers based on strain-balanced heterostructures (Invited Paper) (2005) (8)
High performance quantum cascade lasers at lambda ~6µm (2003) (8)
Recent advances in III-V compounds on silicon (1989) (8)
Intrinsic AlxGa1-xN photodetectors for the entire compositional range (1997) (8)
Overview of quantum cascade laser research at the Center for Quantum Devices (2008) (8)
Characterization of self-assembled InGaAs/InGaP quantum dot mid-infrared photoconductive detectors grown by low-pressure MOCVD (1999) (8)
Negative and positive luminescence in midwavelength infrared InAs-GaSb superlattice photodiodes (2005) (8)
Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon (2010) (7)
Kinetics of quantum states in quantum cascade lasers : device design principles and fabrication (1999) (7)
Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors (1998) (7)
Type-II InAs/GaSb/AlSb superlattice-based heterojunction phototransistors: back to the future (2018) (7)
Low-frequency noise in mid-wavelength infrared InAs/GaSb type-II superlattice based focal plane arrays (2014) (7)
Electron capture processes in optically excited In0.53Ga0.47As/InP quantum wells (1989) (7)
Efficiency of photoluminescence and excess carrier confinement in InGaAsP/GaAs structures prepared by metal‐organic chemical‐vapor deposition (1994) (7)
High-performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb/AlSb Type-II superlattices (2013) (7)
Temperature insensitivity of the Al-free InGaAsP lasers for λ =808 and 980 nm (1997) (7)
Structural, optical, electrical and morphological study of transparent p-NiO/n-ZnO heterojunctions grown by PLD (2015) (7)
Type II superlattice infrared detector and focal plane arrays (2007) (7)
Measurements of carbon monoxide mixing ratios in Houston using a compact high-power CW DFB-QCL-based QEPAS sensor (2014) (7)
Physical concepts of materials for novel optoelectronic device applications I : materials growth and characterization : 28 October-2 November 1990, Aachen, Federal Republic of Germany (1991) (7)
Current status of mid-infrared semiconductor-laser-based sensor technologies for trace-gas sensing applications (2013) (7)
Exploration of entire range of III–V semiconductors and their device applications (1995) (7)
Correlation between x‐ray diffraction patterns and strain distribution inside GaInP/GaAs superlattices (1994) (7)
Monolithic beam steering in a mid-infrared, surface-emitting, photonic integrated circuit (2017) (7)
Dual section quantum cascade lasers with wide electrical tuning (2013) (7)
GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio (1998) (7)
Focal plane arrays based on quantum dot infrared photodetectors (2005) (7)
Background limited performance in p‐doped GaAs/Ga0.71In0.29As0.39P0.61 quantum well infrared photodetectors (1995) (7)
High Performance Solar-Blind Ultraviolet $320 \times 256$ Focal Plane Arrays Based on AlxGa1-xN (2014) (7)
High power InAsSb/InAsSbP electrical injection laser diodes emitting between 3 and 5 μm (2000) (7)
Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth (1999) (7)
Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells (1995) (7)
Thermal Conductivity of InAs/GaSb Type II Superlattice (2011) (7)
Quantum cascade lasers ready for IRCM applications (2012) (7)
Passivation of type II InAs/GaSb superlattice photodetectors (2005) (7)
High power 1D and 2D photonic crystal distributed feedback quantum cascade lasers (2011) (7)
p-Type thin film field effect transistors based on lithium-doped nickel oxide channels grown by pulsed laser deposition (2019) (7)
Study on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure (1997) (7)
Thermoelectric power of GaInAs-InP and GaInAs-AlInAs heterojunctions in a magnetic field (1986) (7)
Broadband Linearly Polarized Beat-Wave TEmlITE1l Mode Converters (1996) (7)
Physical concepts of materials for novel optoelectronic device applications II : device physics and applications : 28 October-2 November 1990, Aachen, Federal Republic of Germany (1991) (7)
VLSI Micro- and Nanophotonics (2010) (7)
Comparison of gain and threshold current density for InGaAsP/GaAs (λ=808 nm) lasers with different quantum well thickness (1996) (7)
High peak power 16 μm InP-related quantum cascade laser (2017) (6)
Measurements of thermoelectric power in two-dimensional systems (1986) (6)
High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1-xSbx superlattices (2016) (6)
High Frequency Extended Short-Wavelength Infrared Heterojunction Photodetectors Based on InAs/GaSb/AlSb Type-II Superlattices (2018) (6)
Morphology of twinned GaN grown on (11·0) sapphire substrates (1997) (6)
Gallium Nitride: Cubic Phase GaN on Nano‐grooved Si (100) via Maskless Selective Area Epitaxy (Adv. Funct. Mater. 28/2014) (2014) (6)
Recent advances in high-performance antimonide-based superlattice FPAs (2011) (6)
InAs/GaSb type II superlattices: A developing material system for third generation of IR imaging (2020) (6)
Improved LEDs and photovoltaics by hybridization & and nanostructuring (2012) (6)
Investigation of surface leakage reduction for small pitch shortwave infrared photodetectors (2019) (6)
High-speed free space optical communications based on quantum cascade lasers and type-II superlattice detectors (2020) (6)
High Thermal Stability of κ-Ga2O3 Grown by MOCVD (2021) (6)
Effects of substrate quality and orientation on the characteristics of III-nitride resonant tunneling diodes (2011) (6)
Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications (2000) (6)
Scanning Electron Microscope (SEM). (1996) (6)
Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si (1995) (6)
Novel Sb-based alloy for uncooled infrared photodetector applications (2001) (6)
Advances in APDs for UV astronomy (2007) (6)
Novel InTlSb and InSbBi alloys for uncooled photodetector applications (1998) (6)
Electronic Structure of Atoms (2018) (6)
Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire (2012) (6)
Uncooled InAs – GaSb Type-II Infrared Detectors Grown on GaAs Substrates for the 8 – 12m Atmospheric Window (1999) (6)
GaSb/InAs Superlattices for Infra Red FPAs (2002) (6)
Chapter 5 Low-Pressure Metallo-Organic Chemical Vapor Deposition of GaxIn1−xAsyP1−y Alloys (1985) (6)
Growth of “moth‐eye” ZnO nanostructures on Si(111), c‐Al2O3, ZnO and steel substrates by pulsed laser deposition (2013) (6)
Continuous wave quantum cascade lasers with 5.6 W output power at room temperature and 41% wall-plug efficiency in cryogenic operation (2020) (6)
Quantum and classical lifetimes in a Ga0.49In0.51P/GaAs heterojunction (1990) (6)
AlGaN/AlN MOVPE heteroepitaxy: pulsed co-doping SiH4 and TMIn (2019) (6)
Characterization of high quality GaInP/GaAs superlattices grown on GaAs and Si substrates by gas source molecular beam epitaxy (1994) (6)
High-responsivity GaInAs/InP quantum well infrared photodetectors grown by low-pressure metalorganic chemical vapor deposition (2000) (6)
Modeling type-II InAs/GaSb superlattices using empirical tight-binding method: new aspects (2004) (5)
High Power Mid-Infrared Quantum Cascade Lasers Grown on GaAs (2022) (5)
GaN nanostructured p-i-n photodiodes (2008) (5)
Toward realization of small-size dual-band long-wavelength infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices (2017) (5)
First Demonstration of ~10 Microns FPAs in InAs/GaSb SLS (2006) (5)
Comparative study of typical defects in III-nitride thin films and their alloys (1997) (5)
Core–shell GaN–ZnO moth-eye nanostructure arrays grown on a-SiO2/Si (1 1 1) as a basis for improved InGaN-based photovoltaics and LEDs (2015) (5)
Ga/sub 0.8/In/sub 0.2/As/GaAs/Ga/sub 0.51/In/sub 0.49/P buried ridge structure single quantum well laser emitting at 0.98 mu m (1992) (5)
Simultaneous growth of two different oriented GaN epilayers on (1 1 . 0) sapphire. I. Morphology and orientation (1997) (5)
Amorphous ZnO films grown by room temperature pulsed laser deposition on paper and mylar for transparent electronics applications (2011) (5)
MOCVD growth of high quality GaNAlGaN based structures on Al2O3 substrates with dislocation density less than 107cm− 2 (1997) (5)
Concentration gradient at an InP/GaAs interface determined by Auger analysis on a chemical bevel (1986) (5)
Recent Advances in IR Laser Diodes with High Power, High WPE, Single Mode, CW Operation at RT (2014) (5)
Shallow p+ layers in In0.53Ga0.47As by Hg implantation (1985) (5)
Nanopillars for bandgap engineering in III-V optoelectronic devices (2004) (5)
Chapter 6 LP-MOCVD Growth, Characterization, and Application of InP Material (1990) (5)
Gain-length scaling in quantum dot/quantum well infrared photodetectors (2009) (5)
Background limited performance of long-wavelength infrared focal plane arrays fabricated from Type-II InAs/GaSb M-structure superlattice (2009) (5)
Intersubband hole absorption in GaAs‐GaInP quantum wells grown by gas source molecular beam epitaxy (1994) (5)
Quantum cascade lasers (2018) (5)
Analysis of spectral response in P-type GaAs/GaInP QWIPs (1995) (5)
High power continuous wave operation of single mode quantum cascade lasers up to 5 W spanning λ∼3.8-8.3 µm. (2020) (5)
Highly Conductive Co-Doped Ga2O3:Si-In Grown by MOCVD (2021) (5)
Antimony: Characteristics, compounds, and applications (2012) (5)
Quantum Photovoltaic Devices Based on Antimony Compound Semiconductors (2006) (5)
High-operating temperature MWIR photon detectors based on type II InAs/GaSb superlattice (2010) (5)
Type II superlattice enables high operating temperature (2011) (5)
Microstructural compositional, and optical characterization of GaN grown by metal organic vapor phase epitaxy on ZnO epilayers (2009) (5)
Quantum hall effect and hopping conduction in InxGa1−xAs-InP heterojunctions at low temperature (1984) (5)
InGaAs/InGaP quantum dots and nanopillar structures for infrared focal plane array applications (2004) (5)
Resonant cavity enhanced heterojunction phototransistors based on type-II superlattices (2020) (5)
Schottky barrier heights and conduction-band offsets of In1−xGaxAs1−yPy lattice matched to GaAs (1997) (5)
Tight-binding theory for the thermal evolution of optical band gaps in semiconductors and superlattices (2011) (5)
Interdiffusion of InGaAs/InP quantum wells by germanium ion implantation (1990) (5)
Stability of far fields in double heterostructure and multiple quantum well InAsSb/InPAsSb/InAs midinfrared lasers (1997) (5)
Solar-blind photodetectors based on Ga2O3 and III-nitrides (2020) (5)
p‐doped GaAs/Ga0.51In0.49P quantum well intersub‐band photodetectors (1995) (4)
High-quality LEO growth and characterization of GaN films on Al2O3 and Si substrates (1999) (4)
MOCVD Growth for Heterostructures and Two-Dimensional Electronic Systems (1984) (4)
Toward realizing high power semiconductor terahertz laser sources at room temperature (2011) (4)
A survey of GaInAsP-GaAs for photonic and electronic device applications (1995) (4)
Antimony Based Materials for Electro-Optics (2004) (4)
Magnetotransport in GaInAs-InP heterojunctions and superlattices (1983) (4)
Ultraviolet avalanche photodiodes (2015) (4)
Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for intersubband transitions (2009) (4)
Research Activity on Type II InAs/GaSb Superlattice for LWIR Detection and Imaging at the Center for Quantum Devices. (2007) (4)
High power InGaAsP-based laser diodes (1995) (4)
Interface roughness scattering in thin quantum wells (1995) (4)
Deep ultraviolet (254 nm) focal plane array (2011) (4)
Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation (2020) (4)
Thermal conductivity tensors of the cladding and active layers of antimonide infrared lasers and detectors (2013) (4)
Miniaturization: enabling technology for the new millennium (2001) (4)
Engineering Multi-Section Quantum Cascade Lasers for Broadband Tuning (2016) (4)
Very low-loss GaInAs/InP optical waveguides for the 10.6μm wavelength (1987) (4)
High power, high wall-plug efficiency, high reliability, continuous-wave operation quantum cascade lasers at Center for Quantum Devices (2020) (4)
Performance analysis of infrared heterojunction phototransistors based on Type-II superlattices (2021) (4)
Quantum cascade lasers for IR and THz spectroscopy (2013) (4)
Harmonic injection locking of high-power mid-infrared quantum cascade lasers (2021) (4)
Recent development of high power, widely tunable THz quantum cascade laser sources based on difference-frequency generation (2015) (4)
Recent advances in quantum dot optoelectronic devices and future trends (2000) (4)
Ultraviolet detector materials and devices studied by femtosecond nonlinear optical techniques (2000) (4)
Type-II superlattice photodiodes: an alternative for VLWIR detection (2003) (4)
Progress in monolithic, broadband, widely tunable midinfrared quantum cascade lasers (2017) (4)
High-performance quantum cascade lasers grown by gas-source molecular beam epitaxy (2001) (4)
High power, continuous-wave, quantum cascade lasers for MWIR and LWIR applications (2006) (4)
Hybrid green LEDs based on n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN (2009) (4)
Nickel oxide growth on Si (111), c-Al2O3 and FTO/glass by pulsed laser deposition (2014) (4)
Widely-tuned room-temperature terahertz quantum cascade laser sources (2013) (4)
Low frequency noise in 1024×1024 long wavelength infrared focal plane array based on type-II InAs/GaSb superlattice (2012) (4)
Comparison of chemical and laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates (2013) (4)
Biosensing and Nanomedicine VII (2017) (4)
A survey of GaInAsP-InP for photonic and electronic applications (1989) (4)
Quantum dot in a well infrared photodetectors for high operating temperature focal plane arrays (2009) (3)
Front Matter: Volume 7222 (2009) (3)
Semiconductor Characterization Techniques (2018) (3)
Growth of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications (1999) (3)
The MOCVD Challenge: Volume II: A survey of GaAs and related compounds and of GaInP for photonic and electronic applications (1995) (3)
Low Pressure MOCVD Growth and Characterization of GaAs and InP on Silicon Substrates (1988) (3)
LEO of III-nitride on Al2O3 and Si substrates (2000) (3)
Carbon Nanotubes, Graphene, and Associated Devices III (2011) (3)
Persistent photoconductivity study in very pure InP epilayers (1989) (3)
Negative luminescence of InAs/GaSb superlattice photodiodes (2006) (3)
Terahertz Emitters, Receivers, and Applications (2010) (3)
Performance characteristics of high-purity mid-wave and long-wave infrared type-II InAs/GaSb superlattice infrared photodiodes (2006) (3)
Front Matter: Volume 8268 (2012) (3)
Reactive ion etching of InP and its optical assessment (1991) (3)
Observation of a spin-polarization instability in tilted magnetic fields (1993) (3)
III-nitride photon counting avalanche photodiodes (2008) (3)
GaN-BASED LASER DIODES (1998) (3)
Revolutionary development of Type-II GaSb/InAs superlatices for third generation of IR imaging (2012) (3)
Multicolor 4- to 20-um InP-based quantum well infrared photodetectors (1999) (3)
Chapter 4 – GaInAs(P) based QWIPs on GaAs, InP, and Si substrates for focal plane arrays (2002) (3)
Spectral Response of GaN P-N Junction Photovoltaic Structures (1995) (3)
InAs quantum dot infrared photodetectors on InP by MOCVD (2006) (3)
Review of high power frequency comb sources based on InP: from MIR to THz at CQD (2018) (3)
Geiger-Mode Operation of AlGaN Avalanche Photodiodes at 255 nm (2021) (3)
High speed short wavelength infrared heterojunction phototransistors based on type II superlattices (2020) (3)
Characterization and analysis of single-mode high-power continuous-wave quantum-cascade laser (2005) (3)
Gas source molecular beam epitaxy growth and characterization of modulation-doped field-effect transistor structures (1997) (3)
High performance LWIR type II InAs/GaSb superlattice photodetectors and infrared focal plane arrays (2005) (3)
Ultrafast Electron Plasma Index: An Ionization Perspective (2014) (3)
Recent development in Sb-based MWIR interband laser diodes (1998) (3)
A lifetime of contributions to the world of semiconductors using the Czochralski invention (2017) (3)
AlxGa1-xN p-i-n photodiodes on sapphire substrates (1999) (3)
Spectroscopic ellipsometry study of the In1‐xGaxAsyP1‐y/InP heterojunctions grown by metalorganic chemical‐vapor deposition (1986) (3)
Recombination of carriers confined at In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP interfaces (1985) (3)
Mid-infrared quantum cascade lasers with high wall plug efficiency (2009) (3)
Advances in UV sensitive visible blind GaN-based APDs (2011) (3)
Zinc oxide moves further into the ultraviolet (2013) (3)
Fundamentals of Solid State Engineering 4th ed. (2020) (3)
Internal stress around micropipes in 6H-SiC substrates (1999) (3)
GaInAsP/InP 1.35 μm double heterostructure laser grown on silicon substrate by metalorganic chemical vapor deposition (1993) (3)
Growth models of GaN thin films based on crystal chemistry: hexagonal and cubic GaN on Si substrates (1997) (3)
RECENT ADVANCE IN SEMICONDUCTOR MID-INFRARED LASERS EMITTING AT 3-12 MU M (1999) (3)
Generalized k ⋅ p perturbation theory for atomic-scale superlattices (1997) (3)
High-brightness LWIR quantum cascade lasers. (2021) (3)
Room temperature continuous wave THz quantum cascade laser source with high power operation (2014) (3)
Self-assembled semiconductor quantum dot infrared photodetector operating at room temperature and focal plane array (2007) (3)
Chapter 6 – GaSb/lnAs supperlattices for infrared FPAs (2002) (3)
Characterization of ZnO thin films grown on c-sapphire by pulsed laser deposition as templates for regrowth of ZnO by metal organic chemical vapor deposition (2009) (3)
Novel InTlSb alloy for uncooled long-wavelength infrared photodetectors (1999) (3)
Sb-based third generation at Center for Quantum Devices (2020) (2)
Optical Properties of Semiconductors (2018) (2)
First demonstration of 10 microns FPAs in InAs/GaSb superlattices (2006) (2)
Inter-band magneto-absorption in a Ga0.3In0.7As-InP strained layer superlattice (1986) (2)
Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO (2016) (2)
Low-pressure metalorganic chemical vapor deposition of high-quality AlN and GaN thin films on sapphire and silicon substrates (1995) (2)
Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition (1998) (2)
InSb detectors and Focal Plane Arrays on GaAs, Si, and Al2O3 substrates (1996) (2)
GaN, GaAlN, and AlN for use in UV detectors for astrophysics: an update (1996) (2)
Far-IR magneto-emission study of the quantum-hall state and breakdown of the quantum-hall effect (1991) (2)
Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers (2014) (2)
Radiometric characterization of long-wavelength infrared type II strained layer superlattice focal plane array under low-photon irradiance conditions (2012) (2)
1.55µm BH-DFB lasers grown by LP-MOCVD (1986) (2)
Etching of ZnO toward the development of ZnO homostructure LEDs (2007) (2)
The carbon atom (2018) (2)
GaInAs/InP quantum well infrared photodetectors grown on Si substrates (2001) (2)
Electrical transport properties of highly doped N-type GaN epilayers (1998) (2)
Monolithic integration of GaInAs/InP quantum well infrared photodetectors on Si substrate (2001) (2)
VALIDATION OF MOCVD GaInAsP/InP LASER FABRICATION TECHNOLOGY STEPS BY PHOTOLUMINESCENCE IMAGING METHOD. (1985) (2)
The Center for Quantum Devices — extending the scope of photonics (1997) (2)
Roadmap of semiconductor infrared lasers and detectors for the 21st century (1999) (2)
Compound Semiconductors and Crystal Growth Techniques (2018) (2)
High-performance InAs quantum-dot infrared photodetectors grown on InP substrate operating at room temperature and high operating temperature focal plane array (2007) (2)
Breakthroughs Bring THz Spectroscopy, Sensing Closer to Mainstream (2016) (2)
Quantum Dot Infrared Photodetectors by Metal-Organic Chemical Vapour Deposition (2008) (2)
Buried-Channel Insulated Gate Fets On MOCVD Grown Inp/InGaAs/InP (1987) (2)
Quantum Cascade Laser Breakthrough for Advanced Remote Detection (2016) (2)
Investigation of LP-MOCVD-grown GaAs-GaInP multiquantum wells by reflectance anistropy (1990) (2)
Demonstration of InAsSb/AlInSb double-heterostructure detectors for room temperature operation in the 5- to 8-μm wavelength range (1999) (2)
High performance Antimony-based Type-II superlattice photodiodes on GaAs substrate (2009) (2)
In situ investigation of the low pressure MOCVD growth of III-V compounds using reflectance anisotropy measurements (1991) (2)
Growth of deep-UV light-emitting diodes by metalorganic chemical vapor deposition (2004) (2)
The effect of persistent photoconductivity in undoped GaInP/GaAs quantum wells (1995) (2)
High Power InAsSb/InAsSbP Laser Diodes Emitting at 3 ∼ 5 μm Range (1996) (2)
MOMBE growth of high quality GaAs/GaInP heterostructures (1991) (2)
Recent Advances in 3-5 microns InGaAs/InAlAs/InP quantum cascade lasers (2005) (2)
Sb-based infrared materials and photodetectors for the near-room-temperature applications (1997) (2)
High performance mid-wavelength quantum dot infrared photodetectrors for focal plane arrays (2006) (2)
Continuous-wave room-temperature operation of λ ~ 3 μm quantum cascade laser (2013) (2)
Cyclotron resonance investigations in GaInAs(P)/InP heterojunctions grown by low-pressure metal-organic chemical vapour deposition (1987) (2)
Double electron barrier structure for suppression of dark current in microjunction-based type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors (2018) (2)
Quantum Dots of InAs/GaSb Type II Superlattice for Infrared Sensing (2001) (2)
A study of n-type GaxIn1-xAsyP1-y-InP quantum wells (1986) (2)
Recent advances in III-nitride materials, characterization and device applications (1997) (2)
III‐V monolithic resonant photoreceiver using local epitaxy and large lattice mismatch material (1991) (2)
High-power InAsSb/InAsSbP laser diodes emitting at 3- to 5-um range (1997) (2)
High-power quantum cascade lasers (QCLs) grown by GasMBE (2003) (2)
Scale-up of the chemical lift-off of (In)GaN-based p-i-n junctions from sapphire substrates using sacrificial ZnO template layers (2015) (2)
Exploration of novel InSbBi alloy for uncooled infrared photodetector applications (1999) (2)
Monolithic Integration of a Ga 0.47 In 0.53 as Photoconductor with a n-/n+ GaAs Rib Waveguide : A Simple Design Device (1987) (2)
Novel green light emitting diodes: exploring droop-free lighting solutions for a sustainable earth (2010) (2)
InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD (2004) (2)
Energy harvesting from millimetric ZnO single wire piezo-generators (2012) (2)
MOCVD Technology and its Applications: Volume 3A: Materials, Properties and Preparations (1994) (2)
Temperature and Magnetic Field Dependent Thermoelectric Power in GaInAs-InP Heterojunctions (1985) (2)
High performance quantum dot-quantum well infrared focal plane arrays (2010) (2)
Low Dark Current Deep UV AlGaN Photodetectors on AlN Substrate (2022) (2)
Spectroscopic investigation of electron-hole plasma properties in InGaAs/InP quantum well structures (1987) (2)
Ga//xIn//1// minus //xAs//yP//1// minus //y-InP, DH LASERS EMITTING AT 1. 3 mu m GROWN ON GaAs SUBSTRATES BY LP-MOCVD GROWTH TECHNIQUE. (1985) (2)
QUANTUM DEVICES BASED ON MODERN BAND STRUCTURE ENGINEERING AND EPITAXIAL TECHNOLOGY (2008) (2)
GaInAsP on Si Substrates and Its Device Application (1988) (2)
Characteristics of InGaAs/InGaP quantum dot infrared photodetector grown by metal organic chemical vapor deposition (2001) (2)
Front Matter: Volume 7945 (2011) (2)
Efficient laser arrays for infrared spectroscopy (2011) (2)
The new oxide paradigm for solid state ultraviolet photodetectors (2018) (2)
Measurements of carbon monoxide mixing ratios in Houston using a compact high-power CW DFB-QCL-based QEPAS sensor (2014) (2)
Compound Semiconductors and Crystal Growth Tec (2009) (1)
Equilibrium Charge Carrier Statistics in Semiconductors (2018) (1)
(Invited) InAs/InAs1-XSbx Type-II Superlattices for High-Performance Long-Wavelength Infrared Medical Thermography (2015) (1)
Type-II InAs/GaSb Superlattice Photon Detectors (2010) (1)
Photoluminescence linewidth narrowing in Yb-doped GaN and InGaN thin films (2019) (1)
Optoelectronic Integrated Circuit Materials, Physics, and Devices (1995) (1)
1.3-1.55 μm wavelength integrated photoreceiver using GaInAs/GaAs heteroepitaxy (1989) (1)
Quantum Dots in GaInP/GaInAs/GaAs for Infrared Sensing (2006) (1)
Mutually synchronized spin Hall nano-oscillators for neuromorphic computing (Conference Presentation) (2017) (1)
Quantum well infrared photodetector (λ=3-20 μm) focal plane arrays: monolithic integration with Si-based readout-integrated circuitry for low cost and high performance (2000) (1)
High power deep UV AlGaN light-emitting diodes (2003) (1)
Temperature dependence of the dark current and activation energy at avalanche onset of GaN avalanche photodiodes (2012) (1)
Front Matter: Volume 8496 (2012) (1)
Electron spin resonance in the two-dimensional electron gas of a GaAs-GaxIn1-xP heterostructure (1989) (1)
Front Matter: Volume 6479 (2007) (1)
photonics Study of Phase Transition in MOCVD Grown Ga 2 O 3 from κ to β Phase by Ex Situ and In Situ Annealing (2021) (1)
GaInAs/InP nanopillar arrays for long wavelength infrared detection (2005) (1)
Front Matter: Volume 7397 (2009) (1)
Recent performance records for mid-IR quantum cascade lasers (2009) (1)
III-Nitride Optoelectronic Devices: From ultraviolet detectors and visible emitters towards terahertz intersubband devices (2010) (1)
Optical, Electrical, and Structural Characterization of GaInAsP/InP Layers Grown on Silicon Substrate for 1.35 μm Laser Applications (1992) (1)
Investigation of the factors influencing nanostructure array growth by PLD towards reproducible wafer‐scale growth (2014) (1)
Demonstration of Zn-Diffused Planar Long-Wavelength Infrared Photodetector Based on Type-II Superlattice Grown by MBE (2022) (1)
Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates (2017) (1)
Sensitive detection of CO and N2O using a high power CW 4.61 μm DFB-QCL based QEPAS sensor (2013) (1)
InGaAs/InGaP quantum-dot infrared photodetector with a high detectivity (2006) (1)
Phonons and Thermal Properties (2018) (1)
Front Matter: Volume 7761 (2010) (1)
Biosensing II (2009) (1)
GaN Based Optoelectronic Devices: From Ultraviolet Detectors and Visible Emitters Towards THz Intersubband Devices (2014) (1)
Longwavelength InAsSB Infrared Photodetectors (1995) (1)
Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices (2013) (1)
Magnetotransport measurements in GaInP GaAs heterostructures (1990) (1)
GaN-based nanostructured photodetectors (2009) (1)
Epitaxial growth of aluminum nitride on sapphire and silicon (1994) (1)
Front Matter: Volume 8812 (2013) (1)
Photodetectors : materials and devices V : 26-28 January 2000, San Jose, California (2000) (1)
High peak power (34 W) photonic crystal distributed feedback quantum cascade lasers (2011) (1)
First Demonstration of High-Speed Uncooled Type-II Superlattices for Long Wavelength Infrared Detection (1999) (1)
Thermal Properties of Crystals (2009) (1)
High Power Mid-Infrared Quantum Cascade Lasers Grown on Si (2022) (1)
Quantum dot intersubband photodetectors (2001) (1)
UV photodetectors based on AlxGa1-xN grown by MOCVD (1996) (1)
Development of material quality and structural design for high performance Type II InAs/GaSb superlattice photodiodes and focal plane arrays (2008) (1)
Detectors and Imaging Devices: Infrared, Focal Plane, (2017) (1)
Imprinting of nanoporosity in lithium-doped nickel oxide through the use of sacrificial zinc oxide nanotemplates (2017) (1)
High-power semiconductor lasers make mid-infrared wavelengths accessible (2006) (1)
Photodetector materials and devices VII : 21-23 January 2002, San Jose, USA (2002) (1)
GaAs/GaInP Quantum Well Intersubband Photodetectors for Focal Plane Array Infrared Imaging (1996) (1)
LOW TEMPERATURE PHOTOLUMINESCENCE AND ABSORPTION OF GaxIn1-xAs/ InP (1982) (1)
Ultrafast Pulse Generation from Quantum Cascade Lasers (2022) (1)
Carbon fullerenes (2019) (1)
Chapter 5 - Advances in Quantum Dot Structures (2001) (1)
Growth of AlGaN on silicon substrates: a novel way to make back-illuminated ultraviolet photodetectors (2015) (1)
Infrared imaging arrays using advanced III-V materials and technology (1997) (1)
High performance quantum cascade laser results at the Centre for Quantum Devices (2003) (1)
Integrated Optics and Optoelectronics: Proceedings of a Conference Held 21-23 January, 1993, Los Angeles California (1992) (1)
OPTICAL STUDIES OF GaInAs/InP QUANTUM WELLS. (1985) (1)
Optimization of InGaAsP/GaAs laser diode processing for high-power operation (1994) (1)
Development of GaN-based films for use in UV sensitive but visible blind detectors (2001) (1)
Low Noise Short Wavelength Infrared Avalanche Photodetector Using SB-Based Strained Layer Superlattice (2021) (1)
On the description of the collision terms in three-valley hydrodynamic models for GaAs device modeling (1994) (1)
InGaAsP/GaAs high-power lasers for Nd:YAG pumping (1994) (1)
Second harmonic generation in hexagonal SiC (1995) (1)
ALXGAYIN1-X-YAS/INP-BASED QUANTUM WELL INFRARED PHOTODETECTORS (1999) (1)
Electrical characterization of AlxGa1-xN for UV photodetector applications (1999) (1)
GaInAsP/GaAs for high-power pumping laser (1994) (1)
6. Quantum Dots (2015) (1)
Carbon Nanotubes, Graphene, and Associated Devices II (2018) (1)
Al{sub x}Ga{sub 1{minus}x}N based materials and heterostructures (1997) (1)
Microstrip Array Ring FETs with 2D p-Ga2O3 Channels Grown by MOCVD (2021) (1)
Development of quantum cascade lasers for high peak output power and low threshold current density (2001) (1)
Advances in Quantum Dot Structures (2001) (1)
Gallium Nitride on Silicon for Consumer & Scalable Photonics (2012) (1)
Positive and negative luminescence in binary type II InAs/GaSb superlattice photodiodes (2006) (1)
Pressure-induced depopulation of the first excited subband in GaInAs/InP heterojunctions (1989) (1)
8.5-μm room temperature quantum cascade lasers grown by gas-source molecular beam epitaxy (1998) (1)
Improved performance of quantum cascade lasers via manufacturable quality epitaxial side down mounting process utilizing aluminum nitride heatsinks (2006) (1)
Broadband, tunable, and monolithic quantum cascade lasers (2017) (1)
Semiconductor Device Technology (2010) (1)
Operating characteristics of Al-free InGaAsP/GaAs single quantum well high-power laser (1996) (1)
Author Correction: Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface (2017) (1)
MOCVD growth of III-V heterojunctions and superlattices on Si substrates for photonic devices (1988) (1)
Uncooled long-wavelength infrared photodetectors using narrow bandgap semiconductors (1998) (1)
Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT) (2002) (1)
The Long Wavelength Luminescence Observation from the Self-Organized InGaAs Quantum Dots Grown on (100) GaAs Substrate by Metalorganic Chemical Vapor Deposition. (1997) (1)
InTISb alloys for infrared detection (1994) (1)
MOCVD Growth of Narrow GAP Low Dimensional Structures (1987) (1)
Room temperature compact THz sources based on quantum cascade laser technology (2013) (1)
Type II InAs/GaSb superlattice focal plane arrays for high-performance third generation infrared imaging and free-space communications (2007) (1)
Thermal imaging based on high-performance InAs/InP quantum-dot infrared photodetector operating at high temperature (2007) (1)
Carbon nanotubes based microwave varactor: modeling, simulation and design - art. no. 70370F (2008) (1)
RELAXATION KINETICS IN MID-INFRARED QUANTUM CASCADE LASERS (1998) (1)
Barrier controlled hot carrier cooling in In0.53Ga0.47As/InP quantum wells (1989) (1)
Current Status of High Performance Quantum Cascade Lasers at the Center for Quantum Devices (2003) (1)
Evaluation of the band offsets of GaAs/GaInP multilayers by electroreflectance (1992) (1)
Ex situ Characterization Techniques (1995) (1)
LP-MOCVD GROWTH AND CW OPERATION OF HIGH QUALITY SLM AND DFB SEMICONDUCTOR Ga//xIn//1// minus //xAs//yP//1// minus //y-InP LASERS. (1985) (1)
Front Matter: Volume 7608 (2010) (1)
Single-Photon Avalanche Photodiodes (2010) (1)
Aluminum-free quantum well intersubband photodetectors with p-type GaAs wells and lattice-matched ternary and quaternary barriers (1995) (1)
Superlattice sees colder objects in two colors and high resolution (2012) (1)
Erratum: “High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices” [Appl. Phys. Lett. 97, 193505 (2010)] (2011) (1)
Competing technology for high-speed HOT-IR-FPAs (2012) (1)
In Situ Investigation of the Low Pressure MOCVD Growth of Lattice-Mismatched Semiconductors using Reflectance Anisotropy Measurements (1991) (0)
New frontiers in InP based quantum devices (2008) (0)
Localized Epitaxy for Vertical Cavity Surface Emitting Laser Applications (1997) (0)
Recent advances in IR semiconductor laser diodes and future trends (2011) (0)
MIOMD-XI Infrared Optoelectronics: Materials and Devices (2012) (0)
Advance in type II InAs/GaSb superlattice photodiodes for LWIR detection and imaging (2007) (0)
Spin-orbit fields at Fe/GaAs (001) interface (Conference Presentation) (2017) (0)
Breaking spectral and performance barriers for HOT detectors and FPAs: The power of Sb- based materials innovation (2022) (0)
Metalorganic Chemical Vapor Deposition of GaN, AlN and GaAlN for UV Photodetector Applications. (1995) (0)
Electrically tunable quantum cascade lasers for broadband applications (2014) (0)
Spin-dependant tunnelling in ultrathin Schottky junctions based on La0.66Sr0.33MnO3 / SrTiO3:Nb interfaces (Conference Presentation) (2017) (0)
Opto-Electronics Review, International Editorial Advisory Board (2000) (0)
Morphological characterization of selectively overgrown GaN via lateral epitaxy (2002) (0)
Study of thin films polarity of group III nitrides (1998) (0)
The Infrared Physics of Quantum Dots: Science, Technology, and Applications (2010) (0)
Control Infrared Light (2020) (0)
Front Matter: Volume 9551 (2015) (0)
Front Matter: Volume 7763 (2010) (0)
Quantum engineering of semiconductor atomic structures (2014) (0)
InGaAsP Diode Laser for Nd:YAG Pumping. (1996) (0)
Superlattices see in the dark (2009) (0)
The quantum Hall effect in modulation doped In 0 . 53 Ga 0 . 47 As-InP heterojunctions (2016) (0)
High power quantum cascade lasers operating at room temperature (2003) (0)
Magnetic and superconducting proximity effects on the transport properties of hybrid heterostructures (Conference Presentation) (2017) (0)
High power photonic crystal distributed feedback quantum cascade lasers emitting at 4.5 μm (2010) (0)
AlGaN-based intersubband device technology (2013) (0)
Author Correction: Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface (2017) (0)
Type–II superlattices base visible/extended short–wavelength infrared photodetectors with a bandstructure–engineered photo–generated carrier extractor (2019) (0)
Hybrid green LEDs with n-type ZnO substituted for n-type GaN in an inverted p-n junction (2009) (0)
Introduction to Quantum Sensing and Nano Electronics and Photonics XVIII (2022) (0)
Very low-threshold OMVPE-crown quantum-well lasers (1983) (0)
Spin-orbit splitting in quantum wells and 2D topological insulators (Conference Presentation) (2017) (0)
Front Matter: Volume 7780 (2010) (0)
Conference awards on Electrostatics, Electromagnetic Waves (2019) (0)
Green's function formulation of spin pumping (Conference Presentation) (2017) (0)
Feed ULTRAVIOLET DETECTORS : Nitrides push performance of UV photodiodes (2009) (0)
Component epitaxy semiconductor material on a substrate a different lattice parameter and application to various semiconductor components (1986) (0)
Low Drive Voltage GaAs Integrated Electrooptical Phase Modulator For The 10,6 Microns Wavelength (1986) (0)
Carbon-based polymers (2019) (0)
Book reviews (1991) (0)
Ultrafast electrical switching of ferrimagnetic metals (Conference Presentation) (2017) (0)
Front Matter: Volume 10357 (2017) (0)
Capacitance-Voltage (CV) Measurement of Type-2 Superlattice Photodiodes (2016) (0)
First-principles calculation of spin transport and relaxation in magnetic heterostructures (Conference Presentation) (2017) (0)
Investigation of 0.8-μm InGaAsP-GaAs laser diodes with multiple quantum wells (1995) (0)
High power 3- 12 μm infrared lasers: recent improvements and future trends (2001) (0)
Biosensing: Proceedings of SPIE (2008) (0)
Two-dimensional metal dichalcogenides and their electronic structures (2019) (0)
Biosensing : 12-14 August 2008, San Diego, California, USA (2008) (0)
LASERS, OPTICS, AND OPTOELECTRONICS 1191 Electro-optic sampling near zero optical transmission point (1999) (0)
Colloidal quantum dots for mid-IR detection and emission (Conference Presentation) (2017) (0)
D Luttinger-Kohn Hamiltonian (1995) (0)
Review of Crystal, Thin Film and Nanostructure Growth Technologies (2004) (0)
Photodetectors : materials and devices II : 12-14 February 1997, San Jose, California (1997) (0)
Multi-purpose highly sensitive room temperature nano based detector (Conference Presentation) (2017) (0)
Investigation of 980-nm GaInAs/GaAs/GaInP QW high-power lasers (1998) (0)
AD-A 266 878 , Characterization of InTISb / InSb Grown by Low Pressure Metalorganic Chemical Vapor Deposition on GaAs Substrate (0)
Proceedings of SPIE - The International Society for Optical Engineering: Introduction (2010) (0)
High power quantum cascade ring lasers and possible applications (2012) (0)
Front Matter: Volume 8631 (2013) (0)
Preface to Special Topic: Emerging materials for photonics (2017) (0)
Single-mode, high-power, mid-infrared, quantum cascade laser phased arrays (2018) (0)
Integrated Photonic Technologies: Planar Lightwave Circuits (2010) (0)
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Nano-Injection PhotonDetectors for Sensitive,Efficient Infrared PhotonDetection and Counting (2018) (0)
Broadband Heterogeneous Quantum Cascade Lasers (2017) (0)
Optoelectronic integrated circuit's (OEIC's) application in WDM (2002) (0)
Front Matter: Volume 8460 (2012) (0)
Erratum to: High-performance, continuous-wave quantum-cascade lasers operating up to 85°C at λ∼8.8 μm (2010) (0)
Magneto-optics and strain effects in GaInAsAlInAs and GaInAsInP quantum wells (1987) (0)
Type-II Antimonide-based Superlattice Photon Detectors and Focal Plane Arrays: Characteristics, Compounds and Applications (2012) (0)
High Power, Widely Tunable, and Beam Steerable Mid-infrared Quantum Cascade Lasers (2021) (0)
Front Matter: Volume 10383 (2017) (0)
B Optimization of Thickness and In Composition of InGaAs Well for 980 nm Lasers (1995) (0)
III-Nitrides-Based Biosensing: Electronics, Photonics, and Biotechnology (2011) (0)
Phonon-induced superconductivity in a self-consistent Hubbard model (Conference Presentation) (2017) (0)
MOCVD-Growth, Characterization and Application of III-V Semiconductor Strained Heterostructures (1987) (0)
Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California (1999) (0)
Carbon nanotubes and polyacenes (2019) (0)
The microstructural study of aluminum nitride thin films: Epitaxy on the two orientations of sapphire and texturing on Si (1995) (0)
High power quantum cascade lasers: A room temperature reality (2004) (0)
InGaAsP-based Snapshot (2009) (0)
Multiple-band, single-mode, high-power, phase-locked, mid-infrared quantum cascade laser arrays (2018) (0)
Dynamics 2020 Awards (2019) (0)
Bragg resonator for selective feedback in overmoded oscillators (1990) (0)
Widely-tuned room-temperature high power semiconductor THz sources (2013) (0)
Structural and microstructural characterization of GaN thin films and GaN-based heterostructures grown on sapphire substrates (1997) (0)
Spintronic terahertz generation (Conference Presentation) (2017) (0)
Integrated Photonic Technologies: Plasmonics and Integration (2010) (0)
Spintronics: a potential pathway to enable an exponential scaling for beyond-CMOS era (Conference Presentation) (2017) (0)
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High power, CW, RT, DFB-CQD lasers emitting at 4-8 microns (Paper has not been available at the publishing time) (2005) (0)
MOCVD Growth of GaAs Layers (1995) (0)
Corbino-capacitance technique for contactless measurements on conducting layers: application to persistent photoconductivity (1991) (0)
Type-II InAs/GaSb superlattice photon detectors and focal plane arrays (2016) (0)
Front Matter: Volume 8099 (2011) (0)
Electron Phonon Interactions (2009) (0)
Front Matter: Volume 8993 (2013) (0)
Infrared physics of quantum dots (2016) (0)
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Infrared Semiconductor 3-5 Micrometers High Power InAsSb Based Injection Lasers (2002) (0)
Spintronics II (2009) (0)
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Chemical Vapor Deposition of Semiconductor Materials: Volume 5, Surface Engineering (1994) (0)
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Ga2O3: Quantum semiconductor materials science and their application (2022) (0)
Dark current reduction in microjunction-based double electron barrier type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors (2017) (0)
Frontiers of semiconductor superlattice growth (1985) (0)
High Optical Response in Forward Biased (In,Ga)N–GaN Multiquantum-Well Diodes Under Barrier Illumination (2008) (0)
Front Matter: Volume 8155 (2011) (0)
PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON QUANTUM STRUCTURE INFRARED PHOTODETECTOR (QSIP) 2010 Preface (2011) (0)
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Demonstration of an Electronic Grade Ti/AlN/Si Metal-Insulator-Semiconductor Capacitor (1996) (0)
Front Matter: Volume 9552 (2015) (0)
GaAs-based heterojunction electron devices grown by MOCVD (1995) (0)
A review of the band offsets measurements in the GaAs/Ga 0.49 In 0.51 P system (1991) (0)
First demonstration of high power InAsxSby(P) 1-x-y/InAsxSb1-z electrical injection lasers diodes emitting between 4.0 and 4.8 μm (1999) (0)
Ill-Nitride Based Optoelectronics Final Report (2010) (0)
High-power room-temperature continuous-wave operation of quantum cascade lasers grown by GasMBE (2004) (0)
Integrated Photonic Technologies: Photonic Crystals and Integrated Circuits (2010) (0)
Very high quality p-type Al/sub x/Ga/sub 1-x/N/GaN superlattice (2001) (0)
Advanced semiconductor lasers in the 3-10 μm wavelength range (2000) (0)
Front Matter: Volume 8461 (2012) (0)
Front Matter: Volume 8119 (2011) (0)
III-Nitrides–Based Biosensing (2017) (0)
Spectral emission control of terahertz quantum cascade laser via injection seeding technique (Conference Presentation) (2017) (0)
Sb-based infrared materials and photodetectors for the 3-5 and 8-12 μm range (1996) (0)
P-Based Semiconductor Multilayers (1999) (0)
21st Century: The Final Frontier for III-Nitrides Materials and Devices (1999) (0)
First demonstration of high power InAs/sub x/Sb/sub y/(P)/sub 1-x-y//InAs/sub x/Sb/sub 1-z/ electrical injection lasers diodes emitting between 4.0 and 4.8 /spl mu/m (1999) (0)
High power quantum cascade lasers in the 3-12 micron wavelength range (2004) (0)
Relaxation kinetics in midi-infrared quantum cascade lasers (1998) (0)
Characterizing spin orbit torque effective fields (Conference Presentation) (2017) (0)
Front Matter: Volume 9370 (2015) (0)
Investigation of MgZnO/ZnO heterostructures grown on c-sapphire substrates by pulsed laser deposition (2013) (0)
MOCYD Growth Technique (1995) (0)
Stabilization and control of Majorana bound states with skyrmions (Conference Presentation) (2017) (0)
Nitrides push performance of UV photodiodes (2009) (0)
Charge-spin conversion in topological insulators and graphene (Conference Presentation) (2017) (0)
Atomic and gap-engineered Sb-based type-II superlattices for low-noise high-sensitivity photodetectors and imagers from deep UV to VLWIR (2022) (0)
MOCVD growth of ZnO nanostrutures using Au droplets as catalysts - art. no. 68950Z (2008) (0)
Optoelectronic integrated circuit materials, physics, and devices : 6-9 February 1995, San Jose, California (1995) (0)
Growth and Characterization of GalnP/GaAs System for Quantum Well Infrared Photodetector Applications (1996) (0)
Reflectance anisotropy spectrometer for real time crystal growth investigations (1991) (0)
Very high uniformity of very low-threshold high-reliability 1.30-µm buried heterostructure laser diodes grown by metal-organic chemical vapor deposition (1986) (0)
Electric field induced switching of magnetic skyrmions and strain relief effects (Conference Presentation) (2017) (0)
Topological Hall effect in a system with magnetic skyrmions (Conference Presentation) (2017) (0)
Sb-Based Infrared Materials for the Uncooled Photodetector Applications (1997) (0)
GaN Materials and Power Devices (2014) (0)
Front Matter: Volume 9550 (2015) (0)
Theory of angular momentum transport (Conference Presentation) (2017) (0)
ZnO Nanorod Electrodes for Hydrogen Evolution & Storage (2015) (0)
Reliable high-power uncoated Al-free InGaAsP/GaAs lasers for cost-sensitive optical communication and processing applications (1998) (0)
Spectroscopic ellipsometry study of the tn1_xGaxAsyP1_ynnP heterojunctions grown by metaiorganlc chemical-vapor deposiimon (2010) (0)
Duality Near the Quantum Hall Liquid to Insulator Transition in INGAAS/INP Heterostructures (1997) (0)
Development of Infrared Photodetectors Based on InTISb Alloys (AASERT). (1997) (0)
Acoustic driven magnonics (Conference Presentation) (2017) (0)
Integrated Photonic Technologies: Micro-Ring Structures (2010) (0)
III-Nitride nanotechnology (2016) (0)
Theoretical and experimental analysis of high power Al-free InGaAsP/GaAs (λ=0.808 μm) laser diodes (1999) (0)
Short-wavelength ultraviolet light-emitting diodes based on AlGaN (2005) (0)
Front Matter: Volume 9168 (2014) (0)
Front Matter: Volume 8101 (2011) (0)
Gallium nitride on silicon for consumer and scalable photonics (2013) (0)
Carbon Nanotubes and Associated Devices (2008) (0)
Front Matter: Volume 7035 (2008) (0)
Ultrafast terahertz spintronics (Conference Presentation) (2017) (0)
High quality nitride materials (AlN and AlGaN) on Si and sapphire substrates and UV-LED applications (2018) (0)
Crystallographic Growth Models of Wurtzite-Type Thin Films on 6H-SiC (2002) (0)
Type-II Superlattice for High Performance LWIR Detectors (2008) (0)
Terahertz Device Technology (2010) (0)
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Erratum: ‘‘Second harmonic generation in hexagonal silicon carbide’’ [Appl. Phys. Lett. 66, 1883 (1995)] (1995) (0)
Optoelectronic integrated circuit's (OEIC's) application in WDM (2003) (0)
Quantum-dot IR photodetectors get 'hotter' (2007) (0)
Hybrid cavity for photo-conductive detectors with nanoantenna arrays and distributed Bragg reflectors (Conference Presentation) (2017) (0)
Temperature dependence of the dark current and activation energy at avalanche onset of a GaN avalanche photodiodes (2012) (0)
Development of high-performance III-Nitride-based semiconductor devices (1999) (0)
Technologies for Emerging Applications: Sensing Applications (2010) (0)
Front Matter: Volume 7037 (2008) (0)
ACCEPTOR IMPLANTATION IN In//0//. //5//3Ga//0//. //4//7As. (1986) (0)
The Mystery of Carbon: An introduction to carbon materials (2019) (0)
Critical issues in commercially viable semiconductor lasers (1998) (0)
Single Crystal Growth (2010) (0)
III-nitride Ultraviolet Light Emitting Sources (2005) (0)
Stable single mode terahertz semiconductor sources at room temperature (2011) (0)
Nickel Oxide growth on Si ( 111 ) , cAl 2 O 3 & FTO / Glass by Pulsed Laser Deposition (2015) (0)
Plasmonic biosensors for resource-limited settings (Conference Presentation) (2017) (0)
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Theory of wurtzite-based spin lasers (Conference Presentation) (2017) (0)
Photodetectors: General Concepts (2010) (0)
Front Matter: Volume 8100 (2011) (0)
First Results on InGaAsP Separate Confinement Heterostructure Diode Lasers (1993) (0)
Semiconductor p-n and Metal-Semiconductor Junctions (2018) (0)
optical waveguide made of semiconductor material, applying this laser waveguide and method of realization (1986) (0)
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InAsSb(P)-InAsSb-InAs Long Wavelength Lasers. (1996) (0)
Energy Levels and Laser Gains in a Quantum Well (GainAsP): the 'Effective Mass Approximation' (1995) (0)
The MBE Growth of InSb and InTlSb for Long-Wavelength Infrared Photodetectors and Focal Plane Arrays. (1995) (0)
Growth of InSb/GaAs Layers on YIG-Coated GGG Substrate (1992) (0)
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Novel InTlSb Infrared Detectors (1996) (0)
Diodes transmitter / receiver of light and optical transmission elements integrated non-reciprocal and their method of manufacture (1984) (0)
Broadband monolithically tunable quantum cascade lasers (2018) (0)
New-type interference pattern generated by internal stress around a micropipe in the 6H-SiC single crystal (1996) (0)
Low threshold, room temperature superlattice-based (/spl lambda//spl sim/7.3 /spl mu/m) quantum cascade lasers by gas-source molecular beam epitaxy (1999) (0)
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III-nitride UV Photoconductors (2005) (0)
Future trends of III-nitrides using lateral epitaxial overgrowth (2000) (0)
Integrated Photonic Technologies: Optical-Printed Circuit Boards (2010) (0)
Infrared photodetectors and imaging arrays using advanced III-V materials (1998) (0)
Room temperature terahertz semiconductor frequency comb (2019) (0)
Finite-Size Scaling in the Dissipative Transport Regime Between Quantum Hall Plateaus (1992) (0)
III-Nitride Visible- and Solar-Blind Avalanche Photodiodes (2007) (0)
Book reviews (1988) (0)
Crystalline Properties of Solids (2018) (0)
Optoelectronic Materials and Device Concepts (1991) (0)
High Performance Planar Antimony-Based Superlattice Photodetectors Using Zinc Diffusion Grown by MBE (2022) (0)
Type II Antimonide‐Based Superlattices: A One‐Dimensional Bulk Semiconductor (2013) (0)
Photodetectors : materials and devices VI : 22-24 January 2001, San Jose, USA (2001) (0)
Front Matter: Volume 8814 (2013) (0)
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Electrons and Energy Band Structures in Crystals (2018) (0)
Substrate emission quantum cascade ring lasers with room temperature continuous wave operation (2012) (0)
Technologies for Emerging Applications: Renewable Energy Generation (2010) (0)
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Neuromorphic computing with stochastic spintronic devices (Conference Presentation) (2017) (0)
Room temperature continuous wave THz frequency comb based on quantum cascade lasers (2019) (0)
Wide band gap III-nitride semiconductor devices (2017) (0)
New frontiers in monolithic, tunable, mid-infrared lasers (2018) (0)
Type-II binary superlattices for infrared detector (2001) (0)
High Power, Narrow-Linewidth, and Compact Terahertz Sources for Room Temperature Applications (2014) (0)
ZnO: from material to unipolar devices (Conference Presentation) (2017) (0)
Introduction: Why do we need THz and where are we now? (2017) (0)
Electronic, optical, and chemical interrogation of neural circuits with multifunctional fibers (Conference Presentation) (2017) (0)
Invited: Solidstate Engineering at Northwestern University (2014) (0)
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III-Nitride Based Optoelectronics (2010) (0)
Injection of sub-picosecond ultrashort spin current pulses in semiconductors (Conference Presentation) (2017) (0)
Optoelectronics device based on compounds III-V on silicon substrate (1987) (0)
GaAs-GaInP multilayers for high performance electronic devices (1991) (0)
High Vacuum Evaporation System. (1996) (0)
Front Matter: Volume 11090 (2019) (0)
Very high-average-power quantum cascade lasers by GasMBE (2003) (0)
III-Nitride UV Photodetectors (2004) (0)
Proceedings of SPIE: Spintronics - Introduction (2008) (0)
High-power CW mid-IR quantum cascade lasers (2005) (0)
Optoelectronic Integrated Circuits (OEICs) (2010) (0)
Development of III-Nitride Based THz Inter-Subband Lasers (2009) (0)
Front Matter: Volume 10352 (2017) (0)
Room temperature THz frequency comb based on QCL (2019) (0)
Front Matter: Volume 7398 (2009) (0)
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Breaking Spectral and Performance Barriers for Diode Lasers with Material Innovation (2018) (0)
High performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices (2013) (0)
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Application of a GaN photodiode for autocorrelation measurements of visible femtosecond pulses (1999) (0)
Sharp/tuneable UVC selectivity and extreme solar blindness in nominally undoped Ga2O3 MSM photodetectors grown by pulsed laser deposition (2021) (0)
Quantum-dot infrared photodetectors and focal plane arrays (2006) (0)
Front Matter: Volume 9555 (2015) (0)
Solar Energy Harvesting (2018) (0)
Front Matter: Volume 9166 (2014) (0)
Non-equilibrium Electrical Properties of Semiconductors (2018) (0)
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Magneto-optical spectroscopy of excitons in semiconducting transition metal dichalcogenides (Conference Presentation) (2017) (0)
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Bias–selectable nBn dual–band long–/very long–wavelength infrared photodetectors based on InAs/InAs1−xSbx/AlAs1−xSbx type–II superlattices (2017) (0)
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Use of PLD-grown moth-eye ZnO nanostructures as templates for MOVPE growth of InGaN-based photovoltaics (2011) (0)
Growth and Fabrication of Multi-Quantum Well Infrared Photodetectors (2000) (0)
High power 3-12 /spl mu/m laser diodes, recent advances and future trend (1999) (0)
High performance InGaAs/InGaP quantum dot infrared photodetector achieved through doping level optimization (2005) (0)
Auto-oscillation and spin-wave propagation in ultra-thin YIG microstructures (Conference Presentation) (2017) (0)
Perpendicular magnetic anisotropy in Bismuth substituted nanometers thick YIG films (Conference Presentation) (2017) (0)
Eigenmodes of semiconductor spin-lasers with local linear birefringence and gain dichroism (Conference Presentation) (2017) (0)
In situ Characterization during MOCVD (1995) (0)
Sb-based infrared photodetectors and focal plane arrays for operation in the 3‒14 µm range (1996) (0)
Integrated Photonic Technologies: Quantum Devices and Integration (2010) (0)
GaAs-GaInP Superlattices for Intersubband Photodetection (1998) (0)
High performance dual-band long-wave infrared focal plane array based on type-II InAs/GaSb superlattices (2011) (0)
Design and Fabrication of High-Performance LWIR Photodetectors Based on Type-II Superlattices (2017) (0)
MOCVD Growth of Ga1-XinxAsyP1-Y-GaAs Quantum Structures (1996) (0)
Front Matter: Volume 10353 (2017) (0)
Introduction: A Preamble (2010) (0)
Front Matter: Volume 7759 (2010) (0)
Semiconductor Heterostructures and Low-Dimensional Quantum Structures (2018) (0)
Technologies for Emerging Applications: Photonic DNA Computing (2010) (0)
Low-loss dielectric nanoantennas for surface-enhanced spectroscopies and nonlinear photonics (Conference Presentation) (2017) (0)
High power, room temperature, terahertz sources, and frequency comb based on difference-frequency generation at CQD (2022) (0)
n- and p-type doping studies of GaAs and GaInP (1991) (0)
Thermal characteristics and analysis of quantum cascade lasers for biochemical sensing applications (2009) (0)
Electron Transport Properties of Gao.51Ino.49P for Device Applications (1994) (0)
Front Matter: Volume 10732 (2018) (0)
Optical detection head carried out in integrated optics and method of making same (1986) (0)
1.3-µm GaInAsP-lnP buried ridge stripe lasers grown by LP-MOCVD on a GaAs substrate (1985) (0)
Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII (2015) (0)
Semiconductor Device Processing (2010) (0)
New developments in III-nitride material and device applications (1998) (0)
III-V monolithic resonant photoreceiver on silicon substrate for long-wavelength operation (1991) (0)
Advantages of Al-free InGaAsP/GaAs lasers for WDM applications (1996) (0)
Correction: Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface (Scientific Reports (2017) 7 (457) DOI: 10.1038/s41598-017-07568-z) (2017) (0)
Superlattice-based quantum devices: from theory to practical applications (2014) (0)
Optoelectronic integrated circuits (OEICs) for next-generation WDM communications (2002) (0)
Lasing threshold characteristics of single qyantum-well lasers (1986) (0)
Growth and Characterization of InAs/GaSb Type-II Superlattice for 8-12 μm Room Temperature Detectors (1998) (0)
Atomic Engineering in Type-II InAs/GaSb for Multicolor Infrared Camera (2005) (0)
Massively degenerated ground state manifold in artificial square ice (Conference Presentation) (2017) (0)
Front Matter: Volume 8813 (2013) (0)
High power InAsSb/InAsSbP laser diodes emitting at 3 approximately 5 μm range (1997) (0)
Theory of spin loss at metallic interfaces (Conference Presentation) (2017) (0)
Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface (2017) (0)
Interface Characterization of GaInAs-InP Superlattices Grown by Low Pressure Metalorganic Chemical Vapor Deposition (1988) (0)
QDIP vs. QWIP: Theory and Experiment (2004) (0)
Artifcial Atoms: Solution for Infrared Multicolor Focal Plane Arrays (2002) (0)
High-power and reliable semiconductor laser diodes for WDM applications (2004) (0)
Front Matter: Volume 9199 (2014) (0)
Very long wavelength GaAs/GaInP quantum well infrared photodetectors (1997) (0)
Scientific and Engineering Issues (2010) (0)
Low pressure metal organic chemical vapour deposition of heterojunctions, quantum wells and superlattices of III-V compounds for photonic and electronic devices (1989) (0)
Conditions for the existence of spin to charge current conversion in spin-Hall devices: the Hall bar versus the Corbino disk (Conference Presentation) (2017) (0)
Anomalous optical properties of Rashba conductor (Conference Presentation) (2017) (0)
Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photodetectors (1999) (0)
Infrared Detectors Based on InAs/GaSb Superlattices (2002) (0)
Terahertz emitters at Center for Quantum Devices: recent advances and future trends (2017) (0)
Women in THz pushing the frontiers of monolithic integration: a compact THz revolution (2013) (0)
Ultrafast single photon detectors (Conference Presentation) (2017) (0)
Emergent orbitronics and dissipationless magnetization control in complex magnets (Conference Presentation) (2017) (0)
Front Matter: Volume 11470 (2020) (0)
Demonstration of Uncooled InAsSb Photodetectors for Military Sensors (2000) (0)
Multiple-band, single-mode, high-power, phase-locked quantum cascade laser arrays (2022) (0)
Interesting problems in superlattice detectors (Conference Presentation) (2017) (0)
Front Matter: Volume 8462 (2012) (0)
AlAsSb/GaSb超格子障壁を有するII型InAs/AlSb/GaSb超格子に基づいた拡張した短波長赤外nBn光検出器 (2017) (0)
Recent advances of terahertz quantum cascade lasers (2011) (0)
Optical characterization of III–IV semiconductors by ellipsometry and reflectance difference spectroscopy (1991) (0)
MOCVD Growth of GAN, AlN and AlGaN for UV Photodetector Applications (1993) (0)
MOCVD growth, characterization, and use of GaInAsP-inP systems for photonic and electronic devices (1988) (0)
Quantum cascade laser: A tool for trace chemical detection (2007) (0)
Uncooled Photon Detectors for IR Imaging (2002) (0)
Peculiarities of operation characteristics of high-power InGaAsP/GaAs 0.8 /spl mu/m laser diodes (1994) (0)
Surface Emitting, Tunable, Mid-Infrared Laser with High Output Power and Stable Output Beam (2019) (0)
Front Matter: Volume 7399 (2009) (0)
Chiral magnetic monopoles in artificial spin systems (Conference Presentation) (2017) (0)
Ill-Nitride Based Optoelectronics Final Report (2010) (0)
GaIn(As)P-GaAs Very Long Wavelength QWIP (2000) (0)
Photodetectors : materials and devices : 1-2 February 1996 (1996) (0)
Development of a sacrificial ZnO/c-Al2O3 template approach to enable the fabrication of cost-effective, superior efficiency, InGaN-based solar cells via wafer-bonding to low cost substrates (2011) (0)
Introduction to Quantum Mechanics (2018) (0)
Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice (2021) (0)
Optical absorption and photoresponse in fully quaternary p-type quantum well detectors (1996) (0)
Monolithic beam steering in a mid-infrared, surface-emitting, photonic integrated circuit (2017) (0)
Monolithic Integration Of Short Length Photodetector With Optical Waveguide. (1989) (0)
HiGH POWER lnAsSbflnAsSbP LASER DIODES EMITTING at 3'-5prniRANGE (2017) (0)
Tunable terahertz devices using graphene and metallic heterostructures (Conference Presentation) (2017) (0)
Growth and Characterization of BRS GaInAsp-GaAs Laser Emitting At 0.8μm by Gas-Source Molecular Beam Epitaxy (1995) (0)
Quantum Confinement III. Quantum Wires and Dots (1996) (0)
Thermal and Photothermal Energy Harvesting (2018) (0)
Frontiers of Monolithic Integration of Semiconductor III-V Optoelectronic Devices with Silicon Technology (1992) (0)
Electron-Electron Interactions: Screening (2018) (0)
Conduction ~ and valence . . band offsets in GaAs / Gao . S 1 Ino . 49 P single quantum wens grown by metalorganic chemical vapor deposition (2001) (0)
Quantum Transport (2018) (0)
Conference on Electrostatics, Electromagnetic Waves (2019) (0)
Gas sensing spectroscopy system utilizing a sample grating distributed feedback quantum cascade laser array and type II superlattice detector (2020) (0)
Polarization-free GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si (100) (2015) (0)
New design strategies for multifunctional and inexpensive quantum cascade lasers (2019) (0)
Dynamics Market Analysis-2020 (2019) (0)
AlGaN-based deep UV light emitting diodes with peak emission below 255 nm (2005) (0)
Quantum dots for infrared focal plane arrays grown by MOCVD (2013) (0)
InTISb for Long-Wavelength Infrared Photodetectors and Arrays. (1993) (0)
QWIPs, SLS, Landsat and the International Space Station (2020) (0)
Investigation of Enhanced Heteroepitaxy and Electrical Properties in κ‐Ga2O3 Due to Interfacing with β‐Ga2O3 Template Layers (2022) (0)
High field bipolar magnetic field sensors based on surface acoustic wave resonators (Conference Presentation) (2017) (0)
Hot-spot relaxation time current dependence in niobium nitride waveguide-integrated superconducting nanowire single-photon detectors (Conference Presentation) (2017) (0)
III-Nitride Nano-Technology: ScienceTechnology, and Applications (2010) (0)
MOCVD-Grown InGaAsP Double Heterostructure Diode Lasers (1993) (0)
Advanced Materials Technology for the Next Decade’s OEICs (1990) (0)
High-Power High Temperature Semiconductor Lasers for lambda ~ 9.6 micron: Frontiers in Science and Technology (2006) (0)
Growth of InTlSB and InTlP for Long Wavelength Infrared Detector Applications (1998) (0)
Spin transfer torque mechanisms in three terminal spin-torque oscillators (Conference Presentation) (2017) (0)
Front Matter: Volume 9167 (2014) (0)
Terahertz metasurface quantum-cascade VECSEL (Conference Presentation) (2017) (0)
Two-Dimensional Hole Gas in GalnAs/ InP Heterojunction (1987) (0)
16 μm InP-related quantum cascade laser (2015) (0)

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