Marc Ilegems
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Engineering
Marc Ilegems's Degrees
- PhD Electrical Engineering University of California, Berkeley
- Masters Electrical Engineering University of California, Berkeley
- Bachelors Electrical Engineering University of California, Berkeley
Why Is Marc Ilegems Influential?
(Suggest an Edit or Addition)Marc Ilegems's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Continuous Wave Operation of a Mid-Infrared Semiconductor Laser at Room Temperature (2001) (771)
- Infrared Lattice Vibrations and Free-Electron Dispersion in GaN (1973) (523)
- Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers (1971) (417)
- High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN (2003) (248)
- Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs (1977) (226)
- Confined Electrons and Photons (1995) (214)
- Donor-acceptor pair recombination in GaN (1971) (214)
- Study of electron traps in n‐GaAs grown by molecular beam epitaxy (1976) (177)
- Electrical properties of n-type vapor-grown gallium nitride (1973) (169)
- Phase equilibria in ternary III–V systems (1972) (159)
- Far-infrared (λ=88 μm) electroluminescence in a quantum cascade structure (1998) (143)
- Optical and electrical properties of Mn‐doped GaAs grown by molecular‐beam epitaxy (1975) (132)
- Coupled semiconductor microcavities (1994) (130)
- Luminescence of Zn‐ and Cd‐doped GaN (1972) (129)
- Luminescence of Be‐ and Mg‐doped GaN (1973) (126)
- Continuous wave operation of a 9.3 μm quantum cascade laser on a Peltier cooler (2001) (118)
- Infrared Reflection Spectra of Ga1-xAlxAs Mixed Crystals (1970) (113)
- Solid-liquid equilibria for quaternary solid solutions involving compound semiconductors in the regular solution approximation (1975) (112)
- Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕GaN Bragg mirrors (2005) (112)
- Two-wavelength laser emission from a coupled semiconductor microcavity (1997) (105)
- Ultrahigh finesse microcavity with distributed Bragg reflectors (1994) (103)
- Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 μm applications (2002) (102)
- Phase equilibria in III–V quaternary systems—application to Al-Ga-P-As (1974) (99)
- Room-temperature operation of low-threshold separate-confinement heterostructure injection laser with distributed feedback (1975) (97)
- Optical Properties of Excitons Bound to Neutral Acceptors in GaP (1971) (91)
- Progress in AlInN-GaN Bragg reflectors: Application to a microcavity light emitting diode (2005) (89)
- Recent Progress in the Growth of Highly Reflective Nitride-Based Distributed Bragg Reflectors and Their Use in Microcavities (2005) (88)
- Island formation in ultra‐thin InAs/InP quantum wells grown by chemical beam epitaxy (1991) (88)
- Optical second harmonic generation in periodic multilayer GaAs‐Al0.3Ga0.7As structures (1976) (86)
- Midinfrared intersubband absorption in lattice-matched AlInN/GaN multiple quantum wells (2005) (86)
- Crack-free highly reflective AlInN /AlGaN Bragg mirrors for UV applications (2006) (84)
- Room-temperature polariton luminescence from a bulk GaN microcavity (2006) (79)
- Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm (2000) (79)
- Vapor epitaxy of gallium nitride (1972) (78)
- Multilayer GaAs-Al(0.3)Ga(0.7)As dielectric quarter wave stacks grown by molecular beam epitaxy. (1975) (72)
- Bending of dislocations in GaN during epitaxial lateral overgrowth (2004) (70)
- The Liquid Phase Epitaxy of Al y Ga1 − y As1 − x Sb x and the Importance of Strain Effects near the Miscibility Gap (1978) (66)
- Charge generation in thin SiO2 polysilicon-gate MOS capacitors (1987) (62)
- Selective area growth of GaAs/AlxGa1−xAs multilayer structures with molecular beam epitaxy using Si shadow masks (1977) (62)
- Application of Teflon-AF thin films for bio-patterning of neural cell adhesion. (1998) (60)
- Thermal lensing effects in small oxide confined vertical-cavity surface-emitting lasers (2000) (59)
- Two‐dimensional device modeling and analysis of GaInAs metal–semiconductor–metal photodiode structures (1996) (58)
- Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy (2002) (58)
- Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy : Applications to intersubband transitions (2006) (55)
- Continuous-wave dual-wavelength lasing in a two-section vertical-cavity laser (2000) (55)
- High-Power Fundamental-Transverse-Mode Strip Buried Heterostructure Lasers with Linear Light-Current Characteristics (1978) (54)
- Optical birefringence of thin GaAs‐AlAs multilayer films (1976) (53)
- Annealing studies of Be‐doped GaAs grown by molecular beam epitaxy (1978) (52)
- Coherence effects in light scattering of two-dimensional photonic disordered systems: Elastic scattering of cavity polaritons (2000) (52)
- Phase‐matched second harmonic generation in a periodic GaAs waveguide (1976) (52)
- X‐ray diffraction reciprocal space mapping of a GaAs surface grating (1993) (49)
- The dual wavelength Bi-vertical cavity surface-emitting laser (1999) (48)
- Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 μm (2002) (48)
- Buried heterostructure quantum cascade lasers with a large optical cavity waveguide (2000) (48)
- Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers (2005) (47)
- Secondary ion mass spectrometry study of oxygen accumulation at GaAs/AlGaAs interfaces grown by molecular beam epitaxy (1987) (45)
- Matrix effects on the structural and optical properties of InAs quantum dots (2001) (45)
- Scaling quantum-dot light-emitting diodes to submicrometer sizes (2002) (44)
- Electrically tunable, room-temperature quantum-cascade lasers (1999) (44)
- Visible InGaN/GaN Quantum-Dot Materials and Devices (2007) (43)
- Phase equilibria and vapor pressures in the Ga + P system (1974) (43)
- Room temperature exciton-photon Rabi splitting in a semiconductor microcavity (1993) (43)
- Impurity Modes in One Dimensional Periodic Systems: The Transition from Photonic Band Gaps to Microcavities (1993) (41)
- Impurity and defect levels in beryllium‐doped GaAs grown by molecular beam epitaxy (1982) (40)
- Stranski-Krastanov GaN∕AlN quantum dots grown by metal organic vapor phase epitaxy (2006) (37)
- Characterization of hot-electron-stressed MOSFET's by low-temperature measurements of the drain tunnel current (1990) (36)
- Surface chemistry and transport effects in GaN hydride vapor phase epitaxy (2004) (35)
- Rate-equation model for coupled-cavity surface-emitting lasers (2004) (35)
- DYNAMICS OF ISLAND FORMATION IN THE GROWTH OF INAS/INP QUANTUM-WELLS (1994) (35)
- Structural and electrooptical characteristics of quantum dots emitting at 1.3 /spl mu/m on gallium arsenide (2001) (33)
- Selective oxidation of AlInN layers for current confinement in III–nitride devices (2005) (33)
- Integrated multijunction GaAs photodetector with high output voltage (1978) (33)
- Current transport in relaxation-case GaAs (1975) (32)
- Diffraction of cylindrical Bragg reflectors surrounding an in-plane semiconductor microcavity (2000) (30)
- Experimental determination of the internal quantum efficiency of AlGaInP microcavity light-emitting diodes (2002) (30)
- Comparison of radiative and structural properties of 1.3 μm InxGa(1−x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties (2003) (30)
- InGaN/GaN resonant-cavity LED including an AlInN/GaN Bragg mirror (2004) (30)
- The luminescence lineshape of highly doped direct-gap III-V compounds (1988) (30)
- High-efficiency light-emitting diodes at /spl ap/1.3 /spl mu/m using InAs-InGaAs quantum dots (2000) (29)
- Control of polarization switching in vertical coupled-cavities surface emitting lasers (2004) (29)
- Phase diagram of the system Al-Ga-P (1973) (28)
- Study of oxygen incorporation in AlGaAs layers grown by molecular‐beam epitaxy (1989) (28)
- Stress control in GaN/sapphire templates for the fabrication of crack-free thick layers (2006) (26)
- High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates (2006) (25)
- Microstructural and optical characterisation of InN layers grown by MOCVD (2004) (24)
- High‐speed photodetectors on InGaAs/GaAs‐on‐GaAs superlattices (1991) (23)
- Device simultaneous determination of the source and cavity parameters of a microcavity light-emitting diode (1999) (23)
- Heat generation and dissipation in GaN‐based light emitting devices (2003) (22)
- Localized Epitaxy of GaN by HVPE on patterned Substrates (1998) (22)
- Effect of detuning on the angular emission pattern of high-efficiency microcavity light-emitting diodes (1998) (22)
- Luminescence and transport properties of high quality InP grown by CBE between 450 and 550°C (1991) (21)
- Influence of the device-width on the accuracy of quantization in the integer quantum Hall effect (1994) (21)
- Resonant photoluminescence of semiconductor microcavities:The role of acoustic phonons in polariton relaxation (1997) (20)
- Realization of a GaN Laser Diode with Wet Etched Facets (2002) (20)
- Characterization of InGaAs and InAlAs layers on InP by four-crystal high resolution X-ray diffraction and wedge transmission electron microscopy (1991) (19)
- Vacuum interlock system for molecular beam epitaxy. (1978) (19)
- Phase Studies in III-IV, II-VI, and IV-VI Compound Semiconductor Alloy Systems (1975) (19)
- Compensation effects in Si‐doped GaAs grown by molecular beam epitaxy (1984) (19)
- Charge trapping and breakdown in thin SiO2 polysilicon-gate MOS capacitors☆ (1987) (18)
- Properties of III–V Layers (1985) (18)
- Formation and optical properties of islands in ultra-thin InAs/InP quantum wells grown by chemical beam epitaxy (1993) (18)
- Growth temperature dependence of the interfacet migration in chemical beam epitaxy of InP on non-planar substrates (1996) (18)
- Room temperature continuous wave operation of quantum cascade lasers (2002) (17)
- Measurement of cavity polariton dispersion curve (1994) (17)
- Interference filters: single crystal multilayer AlAs-GaAs. (1976) (16)
- Epitaxy of Gallium Nitride by HVPE Using Low Temperature Intermediate Buffer Layers Deposited by MOVPE (1999) (16)
- Surface Characterization of a Biochip Prototype for Cell-Based Biosensor Applications (1999) (16)
- Growth of GaInAs(P) and GaInAsP/GaInAs MQW structures by CBE (1992) (16)
- Planar dielectric microcavity light-emitting diodes: Analytical analysis of the extraction efficiency (2001) (16)
- Characterization of AuGe / Ni / Au Contacts on GaAs / AlGaAs Heterostructures for Low‐Temperature Applications (1991) (15)
- The optical properties of Be, Mg and Zn-diffused gallium phosphide (1971) (15)
- As/P interdiffusion in ultrathin InAs/InP strained quantum wells (1994) (14)
- Characterization of deep levels in n‐GaN by combined capacitance transient techniques (2005) (14)
- Fabrication and photoluminescence investigation of silicon nanowires on silicon-on-insulator material (1998) (14)
- High speed 1.3 mu m InGaAs/GaAs superlattice on Si photodetector (1990) (14)
- A superlattice GaAs/InGaAs-on-GaAs photodetector for 1.3- mu m applications (1989) (14)
- The preparation of GaAs thin‐film optical components by molecular beam epitaxy using Si shadow masking technique (1979) (13)
- Epitaxial growth on optical gratings for distributed feedback GaAs injection lasers (1975) (13)
- A quantum cascade laser based on an n-i-p-i superlattice (2000) (13)
- Properties of alloyed AuGeNi-contacts on GaAs/Ga/AlAs-heterostructures (1990) (13)
- Measurements of Al-AlInAs Schottky barriers prepared in situ by molecular beam epitaxy (1992) (13)
- Selective etching of AlInN/GaN heterostructures for MEMS technology (2007) (12)
- Magnetotransport of delta-doped In 0.57 Ga 0.43 As on InPÑ001Ö grown between 390 and 575° C by molecular beam epitaxy (1998) (12)
- Self‐consistent calculations of tunneling currents in n+‐GaAs/i‐ AlxGa1−xAs/n+‐GaAs structures and comparison with measurements (1988) (12)
- Low-frequency noise in electrically stressed n-MOSFETs (1999) (12)
- Diffusion of Beryllium into Gallium Phosphide (1972) (11)
- Low‐frequency noise measurements of AlxGa1−xAs/InyGa1−y As/GaAs high electron mobility transistors (1995) (11)
- In-situ monitoring of GaN growth by hydride vapor phase epitaxy (2002) (11)
- A study of the increased effects of hot-carrier stress on NMOSFETs at low temperature (1989) (11)
- Second harmonic generation in a thin AlAs‐GaAs multilayer structure with wave propagation in the plane of the layers (1976) (11)
- Excitation-induced coherence in a semiconductor microcavity (2002) (11)
- Nitridation of thin SiO2 films in N2 and NH3 plasmas (1987) (11)
- Free‐electron laser internal photoemission measurements of heterojunction band discontinuities (1993) (11)
- Nitride‐based heterostructures grown by MOCVD for near‐ and mid‐infrared intersubband transitions (2007) (10)
- Light-current characterization of dual-wavelength VCSELs (2002) (10)
- High-efficiency top-emitting microcavity LEDs on GaAs and GaAs Si substrates (1999) (10)
- Far-field radiation pattern of red emitting thin-film resonant cavity LEDs (2006) (10)
- Evidence of a blue shift in near surface ultra thin InAs/InP island like quantum wells (1997) (10)
- Design and characterization of top-emitting microcavity light emitting diodes (2000) (10)
- Enhanced Current Injection in Thermal Oxides Grown on Texturized Silicon (1986) (10)
- Growth of Gainas by Chemical Beam Epitaxy (1991) (9)
- DC and RF characteristics of InAlAs/InGaAs dual-gate TEGFETs (1991) (9)
- GaN based laser diodes – epitaxial growth and device fabrication (2003) (9)
- High electron density and mobility in single and double planar doped InGaAs/InAlAs heterojunctions on InP (1991) (9)
- Spontaneous emission model of lateral light extraction from heterostructure light-emitting diodes (2000) (8)
- QUANTITATIVE STUDY OF THE INCORPORATION OF GROUP-III ELEMENTS IN CHEMICAL BEAM EPITAXY OF GAINASP ALLOYS (1993) (8)
- Electrical characterization of pseudomorphic GaAs/InGaAs/AlGaAs and AlGaAs/InGaAs/AlGaAs modulation doped field effect transistor-type heterostructures grown by molecular-beam epitaxy (1992) (8)
- Influence of infrared illumination on the accuracy of the quantized hall resistance (1997) (8)
- High-reflectance GaInP/GaAs distributed Bragg reflector (1993) (8)
- Effect of growth interruptions on ultra-thin InAs/InP quantum wells grown by chemical beam epitaxy (1992) (8)
- Coupling of impurity modes in one-dimensional periodic systems. (2001) (8)
- Enhanced field emission from plasma-texturised Si-SiO2 interfaces (1986) (8)
- Distributed-feedback quantum cascade lasers emitting in the 9-μm band with InP top cladding layers (2002) (7)
- Carrier trapping in ultrafast metal‐semiconductor‐metal photodetectors on InGaAs/GaAs‐on‐GaAs superlattices (1995) (7)
- Comparison of the quantized hall resistance in different GaAs/Al/sub x/Ga/sub 1-x/As heterostructures (1990) (7)
- High‐speed InP/GaInAs metal‐semiconductor‐metal photodetectors grown by chemical beam epitaxy (1994) (7)
- The quantum Hall effect as a standard to define the laboratory unit of resistance (1987) (7)
- Quantitative determination of oxygen in AlGaAs layers by secondary ion mass spectrometry under 18O flux (1989) (7)
- Preparation of high-aspect ratio periodic corrugations by plasma and ion etching. (1976) (7)
- AlGaInP-based microcavity light-emitting diodes: Controlled on-wafer detuning and measurement of the internal quantum efficiency (1999) (7)
- Magneto-transport investigation of Si-Doped n+ Al0.48In0.52As: Observation of the dx centre (1994) (7)
- Molecular beam epitaxy growth of an ultrahigh finesse microcavity (1995) (7)
- Microcavity light emitting diodes as efficient planar light emitters for telecommunication applications (2002) (7)
- Characterization of a top‐illuminated p‐i‐n diode with an indium tin oxide contact (1989) (6)
- Experimental observation of the de Haas-van Alphen effect in a multiband quantum-well sample (1999) (6)
- InP- and GaAs-based quantum cascade lasers (1999) (6)
- Influence of the GaN Seed Layer and Growth Parameters on Selective Epitaxy of GaN by HVPE (1999) (6)
- Molecular-beam epitaxial growth and characterization of modulation-doped field-effect transistor heterostructures using InAs/GaAs superlattice channels (1993) (6)
- Photoquenching of excitonic inhomogeneous linewidth in semiconductor microcavities (1998) (6)
- A Mechanistic Study of GaN Laser Lift‐Off (2002) (6)
- Deconvolution of the intrinsic spontaneous spectrum of vertical-cavity surface-emitting devices (2000) (6)
- Linear and non-linear behavior of cavity polaritons (2000) (6)
- Lifetime limited ultrafast response of metal-semiconductor-metal photodetectors on InGaAs/GaAs-on-GaAs superlattices (1993) (5)
- Properties of a GaxIn1−x As‐GaAs isotype heterojunction diode (1982) (5)
- High-brightness red-emitting AlGaInP thin film RCLEDs (2004) (5)
- Optical gain saturation effects in InAs/GaAs self-assembled quantum dots (2002) (5)
- Microscopic evidence of point defect incorporation in laterally overgrown GaN (2002) (5)
- Inhomogeneous and temperature-dependent p-InGaAs/n-InP band offset modification by silicon δ doping: An internal photoemission study (1995) (5)
- Photoluminescence and Hall characterization of pseudomorphic GaAs/InGaAs/AlGaAs heterostructures grown by molecular‐beam epitaxy (1993) (5)
- Chemical beam epitaxy of InP, InGaAs and InGaAsP on non-planar InP substrates (1993) (5)
- High efficiency planar MCLEDs (2005) (4)
- Pseudomorphic InGaAs/In(Ga)P bidimensional electron gas grown by chemical beam epitaxy (1996) (4)
- Selective GaN Epitaxy on Si(111) Substrates Using Porous Aluminum Oxide Buffer Layers (2006) (4)
- High purity InP grown by chemical beam epitaxy (1991) (4)
- GaN-based Single Mirror Light Emitting Diodes with high external quantum efficiency (2003) (4)
- Characterization of AuGe/Ni/Au Contacts on GaAs/AlGaAs Heterostructures for Low-Temperature Applications. (1991) (4)
- Nonlinear reflectivity of semiconductor microcavities in the weak- and strong-coupling regimes: Experiment and theory (1998) (4)
- Extraction of FET parameters at low drain bias by taking into account the dependence of mobility on 2D electron gas concentration (1991) (4)
- HVPE and MOVPE GaN Growth on Slightly Misoriented Sapphire Substrates (2000) (3)
- Pseudo two-dimensional simulation of a three heterojunction GaAs/AlGaAs MODFET (1990) (3)
- Properties of alloyed AuGeNi-contacts on GaAs/GaAlAs-heterostructures (1990) (3)
- Investigation of DX centers in modulation-doped field-effect transistor-type Al0.3Ga0.7As/GaAs heterostructures using a fourier-transform deep level transient spectroscopy system (1994) (3)
- III–V Compound Semiconductor Epitaxy for Optoelectronic Integration (1994) (3)
- Microstructure of ELO-GaN layers grown by hydride vapor phase epitaxy (2001) (3)
- THE LIQUID PHASE EPITAXY OF ALUMINUM GALLIUM ARSENIDE ANTIMONIDE (ALYGA1-YAS1-XSBX) AND THE IMPORTANCE OF STRAIN EFFECTS NEAR THE MISCIBILITY GAP (1978) (3)
- Photoluminescence from semiconductor microcavities in the cavity-polariton régime (1994) (2)
- Analytical Modeling of MODFET Transfer Cliaracteristics at Low Drain Bias by Taking Into Account the Dependence of Mobility on 2D Electron Gas Concent rat ion (1994) (2)
- Current spreading in AlGaN:Mg cladding layers of laser structures (2001) (2)
- Collisional Broadening of Semiconductor Microcavity Polaritons (2002) (2)
- Correlation between Flatband Voltage Shift in MOS Capacitors and Endurance Degradation of EEPROM Cells (1987) (2)
- Comparison of the quantized Hall resistance in different GaAs/AlGaAs heterostructures (1990) (2)
- Transport and Chemical Mechanisms in GaN Hydride Vapor Phase Epitaxy (2002) (2)
- Low-frequency noise in lattice-matched In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HEMTs (1996) (2)
- Influence of growth conditions on mobility and anisotropy of In/sub y/Ga/sub 1-y/As/In/sub 0.52/Al/sub 0.48/As/InP HEMTs with y=0.53 to 0.80 (1996) (2)
- Reactive ion etching of GaInP/GaAs multilayer structures with SiCl4Cl2Ar plasma (1994) (2)
- One-step growth of buried heterostructures by chemical beam epitaxy over patterned InP substrates (1994) (2)
- Monitoring of nitrogen gas purity by the hot filament method (1997) (2)
- 16.8% external quantum efficiency from a planar LED (1999) (2)
- Using InAs-InGaAs Quantum Dots (2000) (2)
- Investigation of polarization behavior in a vertical-coupled-cavities surface-emitting laser (2003) (2)
- A.C. measurements of edgeless currents in a Corbino ring in the quantum Hall regime (1997) (2)
- A 20-Gbit/s monolithic photoreceiver using InAlAs/InGaAs HEMT's and regrown p-i-n photodiode (1996) (2)
- DC Characterization and Low-Frequency Noise in δ-, Pulse- and Uniformly-doped GaAs/AIGaAs MODFETs (1993) (1)
- BiVCSEL operation at 925 and 955 nm (1999) (1)
- PHASE EQUILIBRIA AND VAPOR PRESSURES IN THE GA+P SYSTEM (1974) (1)
- III-3 room temperature operation of low threshold separate confinement heterostructure injection laser with distributed feedback (1975) (1)
- Far-infrared „ l 5 88 m m ... electroluminescence in a quantum cascade structure (1998) (1)
- In‐situ reflectivity observation of GaN layers grown directly on sapphire by HVPE using low‐temperature nucleation layers (2005) (1)
- 880-nm surface-emitting microcavity light-emitting diode (2001) (1)
- Quantum optics in semiconductor microcavities (1996) (1)
- Cavity-polaritons in semiconductor microcavities (1995) (1)
- A novel method for characterizing degradation of MOSFETs caused by hot-carriers (1989) (1)
- Nonlinear reflectivity of strongly coupled exciton–photon systems under resonant and non-resonant pumping (1999) (1)
- Experimental S-2DEG-S junction characteristics and a novel interpretation (1996) (1)
- AlInN/GaN quantum wells for intersubband transitions (2005) (1)
- Excitons in microcavities: Cavity polariton photoluminescence (1995) (1)
- Preface: Phys. Status Solidi C 6/S2 (2009) (1)
- On-wafer determination of intrinsic spontaneous spectrum of vertical cavity surface-emitting devices (2000) (1)
- Influence of infrared illumination on precision measurements of the integer quantum Hall effect (1996) (1)
- Infiltration of planar photonic crystals with liquid crystals (2004) (1)
- An InGaAs/GaAs Strained Superlattice MSM Photodiode for Fast Light Detection at 1.3 μm (1989) (1)
- Planar photonic crystals: a new material for integrated photonic devices (2003) (1)
- Compound Semiconductors 2002 (2003) (1)
- Chemical beam epitaxy of 1.55-um separate confinement heterostructure multiple quantum well laser diodes (1995) (1)
- Tuning InAs ÕGaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 mm applications (2002) (1)
- Low-frequency Noise Characterization of Dry-etched and Wet-etched InAlAs/InGaAs HEMTs (1997) (1)
- Low frequency noise in dry and wet etched InAlAs/InGaAs HEMTs (1998) (1)
- Study of the Internal Quantum Efficiency of A1GaInP Microcavity Light- Emitting Diodes (2001) (1)
- High-efficiency top-emitting microcavity light-emitting diodes (1999) (1)
- Recents results on sub-meV linewidth cavity-polariton (1998) (0)
- of non-radiative recombination centers and hence, reduce the optical (2003) (0)
- Artificial GaAs-GaAs band discontinuities (1992) (0)
- AlInN as high-index-contrast material for GaN-based optoelectronics (2003) (0)
- Recent advances in continuous wave quantum cascade lasers (invited paper) (2002) (0)
- GaN-based single mirror light emitting diodes (2003) (0)
- Strong coupling effects on the emission properties of semiconductor microcavities (1996) (0)
- Confined electrons and photons: a domain where new physical phenomena device concepts and widescale applications converge (1997) (0)
- of 4x 10 (2003) (0)
- Long-wavelength edge-emitting lasers on Gallium Arsenide using quantum dots embedded in InGaAs (1999) (0)
- MBE growth and characterization of MODFET heterostructures using pseudomorphic InGaAs or InAs/GaAs superlattice channels (1991) (0)
- High-performance (/spl lambda//spl cong/10.4 /spl mu/m) buried heterostructure quantum cascade lasers (2000) (0)
- Low-frequency noise in pseudomorphically grown In0.52Al0.48As/In0.7Ga0.3As/InP HEMTS as a function of channel thickness (1997) (0)
- Internal quantum efficiency of AlGaInP microcavity light-emitting diodes (2001) (0)
- Application and Properties of Molecular-Beam Epitaxial Layers for Optoelectronic Devices (1976) (0)
- LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Pulsed response of an MSM photodiode at high optical radiation energies (1998) (0)
- of this result is that the type of defects formed during 77K (2003) (0)
- Dynamical Studies of Cavity Polaritons in Semiconductor Microcavities (1996) (0)
- Factors determining the external quantum efficiency of AlGaInP microcavity light-emitting diodes (2000) (0)
- MuItiiunction AC or DC Integrated GaP Light Emitting Diode Array (1975) (0)
- An Introduction to Molecular Beam Epitaxy (1989) (0)
- Performance of dual-gate AlInAs/GaInAs/InP TEGFETs (DC to microwave) (1991) (0)
- Author Index : Abdulrhmann S 409 Bowers J E 351, 367 Abe S 21 Boyd E 291 Abrokwah J K 251 Brandt 0 73, 141,431 Aellen T 323, 455 Brauch U 427 Aguilar-Hernandez J 65 Breiter R 339 (2003) (0)
- The modeling of microelectronic structures of small dimensions (1980) (0)
- Drain Current DLTS Measurements of MBE-Grown GaAs/In y Ga 1-y As/Al x Ga 1-x As HEMTs (1994) (0)
- Coherent and incoherent dynamics of strong coupling microcavities (1998) (0)
- Time-response analysis of GaInAs MSM photodiode structures (1996) (0)
- 880nm top emitting Microcavity Light Emitting Diode and Waveguide Anti-Resonant Tapered Light Emitting Diode (2000) (0)
- CBE Regrown InGaAs/InP p-i-n Photodiodes for OEIC's (1995) (0)
- 1300 nm on gallium arsenide: quantum dots vs GaInNAs (2002) (0)
- Optical studies of cavity-polariton (1994) (0)
- Netting layer states (2003) (0)
- Waveguide photonic crystals and microstructures (1999) (0)
- of the 50 length of the 60 (2003) (0)
- Characterization of an AlGaAs/GaAs Metal-Semiconductor-Metal Photodetector (1988) (0)
- Heterojunction band discontinuities measured by free-electron laser internal photoemission (1993) (0)
- Dephasing of strongly coupled exciton-photon systems (1998) (0)
- Controlled growth variation for the detuning of AlGaInP-based microcavity light emitting diodes (1999) (0)
- Determination of oxygen content in MBE AlGaAs layers (1988) (0)
- DC characterization and low-frequency noise in delta-doped, pulse-doped and uniformly-doped GaAs/AlGaAs MODFETs (1993) (0)
- A GaAs contact (n+) A Ga : barrier r.. QDs 5000 A GaAs contact (n+) GaAs Substrate (S .1.) (2003) (0)
- Optical nonlinearities microcavities in the strong coupling regime: Experiment and theory (1996) (0)
- Low frequency noise in dry etched InAlAs/InGaAs HEMTs (1998) (0)
- Characterization of nearly ideal Schottky contacts on n-doped AlInAs usable for high performance AlInAs/GaInAs/InP MODFET applications (1991) (0)
- The transition from photonic band gaps to microcavities, a one-dimensional unified model (1993) (0)
- Time-resolved characterization of InAs/InGaAs quantum dot gain material for 1.3 /spl mu/m lasers on gallium arsenide (2000) (0)
- (Carl Zeiss Jena ). Its value varies from 10m-to l0m-for all (2003) (0)
- of these phases are ferromagnetic up to very high temperatures (for example (2003) (0)
- Strain influence on the optical and vibrational properties of InyAl(1-y)As (y = 0.22 to 0.60) on InP (1992) (0)
- High electron density and mobility InGaAs/InAIAs modulation doped structures grown on InP (1990) (0)
- One step growth of buried heterostructures on non-planar InP substrates using chemical beam epitaxy (1993) (0)
- of 600 ps at room temperature suggests that most of the carriers (2003) (0)
- Polariton scattering processes under resonant excitation in a strongly coupled semiconductor microcavity (2004) (0)
- Study of polarisation switch in a three-contacts vertical-cavity surface-emitting laser (2003) (0)
- Luminescence processes in semiconductor microcavities (1995) (0)
- Critical issues on the strong coupling régime in semiconductor microcavities (1995) (0)
- Distributed-FeedbackQuantumCascade LasersEmitting in the 9- m Band With InP Top CladdingLayers (2001) (0)
- Compound semiconductors 2002 : proceedings of the twenty-ninth International Symposium on Compound Semiconductors held in Lausanne, Switzerland, 7-10 October 2002 (2003) (0)
- Continuous wave room temperature quantum cascade lasers (invited paper) (2003) (0)
- Two-stage degradation of submicron LDD n-MOSFETs by 1/f noise, charge pumping, and drain current measurements (1997) (0)
- Time-resolved optical characterization of InAs / InGaAs quantum dots emitting at 1 . 3 μ (2017) (0)
- Recent advances in quantum cascade laser research and novel applications (2003) (0)
- Incorporation of group III elements in chemical beam epitaxy of GaInAsP alloys (1993) (0)
- Deconvolution of the intrinsic spectrum of AlGaInP microcavity light-emitting diodes (2000) (0)
- Gas source switching in chemical beam epitaxy with pressure regulated gas flux (1989) (0)
- of the i = 4 plateau. Due to the broadening of the i = 3 plateaus a smaller (2003) (0)
- Continuous wave dual wavelength laser emission from BiVCSEL device (2000) (0)
- Semiconductor microcavities: Physics and applications of strong and weak coupling (1996) (0)
- GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy (2004) (0)
- of 3 x 10cm-was estimated to 1 under conditions of 50 m W (2003) (0)
- Microstructure and optical properties of ELO-GaN layers grown by hydride vapor phase epitaxy (2018) (0)
- Chemical beam epitaxy of pseudomorphic InGaAs/InP bidimensional electron gas (1996) (0)
- Al(In)N/GaN Heterostructures for Intersubband Transitions (2005) (0)
- ------------------------. : Current In (mA/mm) (2003) (0)
- LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Pulsed response of Ga0.47In0.53As photodiode structures with a submicron gap between interdigital electrodes (1995) (0)
- \ I : ..., Bt:WJ (2003) (0)
- AlInN as high-index-contrast material for GaN-based optoelectronics (2003) (0)
- MBE AlxGa1-xAs/GaAs phototransistors sensitive at low illumination (1983) (0)
- Low frequency noise in dry and wet etched InAlAdInGaAs HEMTs (1998) (0)
- Characterization of quantum well wires and surfaces gratings by X-ray diffraction reciprocal space mapping (1993) (0)
- High-performance (λ ≅ 10.4 µm) buried heterostructure quantum cascade lasers (2000) (0)
- of a rectangular grating for an edge- : of different points across the laser of the edge-emitting PCDFB (2003) (0)
- Growth and electrical characterization of GaN hydride VPE layers (2000) (0)
- Preparation and physical properties of GaAs-AlAs solid solutions (1970) (0)
- Drain Current DLTS Measurements of MBE-Grown GaAs/InyGa1-yAs/AlxGa1-xAs HEMTs (1994) (0)
- Optical properties of semiconductor microcavities: from Fermi's golden rule to cavity-polariton (1995) (0)
- Erratum: ‘‘As/P interdiffusion in ultrathin InAs/InP strained quantum wells’’ [Appl. Phys. Lett. 65, 341 (1994)] (1994) (0)
- Data transmission using GaAs-based InAs-InGaAs quantum dot LEDs emitting at 1.3 µm wavelength (2002) (0)
- Monolithic Integration of III-V Microcavity Leds on Silicon Drivers using Conformal Epitaxy (1998) (0)
- Room temperature operation of electrically tunable quantum cascade lasers (1999) (0)
- Intersubband Transitions in Nitride Based Quantum Wells (2005) (0)
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What Schools Are Affiliated With Marc Ilegems?
Marc Ilegems is affiliated with the following schools:
