Marjorie Olmstead
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American condensed matter physicist
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Physics
Marjorie Olmstead's Degrees
- PhD Physics University of California, Berkeley
- Bachelors Physics University of California, Berkeley
Why Is Marjorie Olmstead Influential?
(Suggest an Edit or Addition)According to Wikipedia, Marjorie Ann Olmstead is an American condensed matter physicist. Education Olmstead majored in physics at Swarthmore College for her B.A. and graduated with highest honours in 1979. After her junior year, she worked at Bell Labs for a summer through a research program to support women and minority groups, where she became interested in the interactions between semiconductors and insulators when creating stacks. She received her M.A. in 1982 and her PhD in 1985, both from the University of California, Berkeley.
Marjorie Olmstead's Published Works
Published Works
- Photothermal displacement spectroscopy: An optical probe for solids and surfaces (1983) (306)
- Direct Measurement of the Polarization Dependence of Si(111)2×1 Surface-State Absorption by Use of Photothermal Displacement Spectroscopy (1984) (101)
- Variation of Band Gap and Lattice Parameters of β−(AlxGa1−x)2O3 Powder Produced by Solution Combustion Synthesis (2016) (77)
- Band bending and surface defects in β-Ga2O3 (2012) (69)
- Initial formation of the interface between a polar insulator and a nonpolar semiconductor: CaF2 on Si(111) (1986) (61)
- Surface morphology and electronic structure of bulk single crystal β-Ga2O3(100) (2009) (48)
- Formation of the interface between GaAs and Si: Implications for GaAs‐on‐Si heteroepitaxy (1987) (42)
- Heteroepitaxy of Disparate Materials: From Chemisorption to Epitaxy in CaF2/Si(111) (1999) (36)
- A new probe of the optical properties of surfaces (1983) (35)
- Incorporation, valence state, and electronic structure of Mn and Cr in bulk single crystal β–Ga2O3 (2012) (32)
- Interaction of Se and GaSe with Si(111) (2000) (30)
- The effect of a Ga prelayer on the beginning of GaAs epitaxy on Si (1988) (27)
- Multidielectrics for GaAs MIS devices using composition‐graded AlxGa1−xAs and oxidized AlAs (1979) (27)
- Optical properties and atomic structure of cleaved silicon and germanium (111) surfaces (1986) (26)
- POLARIZATION DEPENDENCE OF Ge(111) 2x1 SURFACE STATE ABSORPTION USING PHOTOTHEEMAL DISPLACEMENT SPECTRDSCOPY: A TEST OF SURFACE RECONSTRUCTION MODELS (1984) (21)
- Electron-hole plasma in photoexcited indirect-gapAlxGa1−xAs (1980) (18)
- Variable growth modes of CaF2 on Si(111) determined by x‐ray photoelectron diffraction (1993) (18)
- Initial stages of epitaxial semiconductor-insulator heterointerface formation (1990) (17)
- A novel method for the study of optical properties of surfaces (1983) (16)
- Interaction of GaSe with GaAs(111): Formation of heterostructures with large lattice mismatch (1998) (16)
- Laser and electrical current induced phase transformation of In2Se3 semiconductor thin film on Si(111) (2008) (16)
- Electronic structure evolution during the growth of ultrathin insulator films on semiconductors: From interface formation to bulklikeCaF2∕Si(111)films (2005) (15)
- Epitaxial growth of laminar crystalline silicon on CaF2 (2000) (15)
- Electronic structure of the Si(1 1 1):GaSe van der Waals-like surface termination (2005) (15)
- Molecular beam epitaxy and interface reactions of layered GaSe growth on sapphire (0001) (1998) (15)
- Atomic structures of defects at GaSe/Si(111) heterointerfaces studied by scanning tunneling microscopy (2004) (13)
- Influence of perovskite termination on oxide heteroepitaxy (2006) (12)
- Bonding of As and Se to silicon surfaces (1989) (12)
- Site occupancy and cation binding states in reduced polycrystalline SrxBa1−xNb2O6 (2014) (12)
- Atomically resolved imaging of a CaF bilayer on Si(111): Subsurface atoms and the image contrast in scanning force microscopy (2004) (12)
- Intrinsic vacancy-induced nanoscale wire structure in heteroepitaxial Ga2Se3/Si(001). (2005) (11)
- Low-energy photoelectron diffraction structure determination of GaSe-bilayer-passivated Si(111) (2001) (10)
- Heterointerface formation of aluminum selenide with silicon : Electronic and atomic structure of Si(111):AlSe (2005) (10)
- Surface structure and interface formation of Si on GaAs(100) (1987) (10)
- Surface core‐level shifts in CaF2‐on‐Si(111) films: Experiment and theory (1993) (9)
- Sputtering-induced Co0 formation in x-ray photoelectron spectroscopy of nanocrystalline Zn1-xCoxO spinodal enrichment models (2010) (8)
- Chemical passivity of III-VI bilayer terminated Si(111) (2005) (8)
- Polaronic conduction and Anderson localization in reduced strontium barium niobate (2015) (7)
- Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga 2 Se 3 /Si(001) (2011) (7)
- The bonding of arsenic to the hydrogen‐terminated Si(111) surface (1988) (7)
- Heteroepitaxial growth of the intrinsic vacancy semiconductor Al 2 Se 3 on Si(111): Initial structure and morphology (2008) (6)
- Contrast in scanning probe microscopy images of ultrathin insulator films (2006) (5)
- Semiconducting chalcogenide buffer layer for oxide heteroepitaxy on Si(001) (2006) (4)
- The Influence of Substrate Surface Chemistry on GaAs - on - Si Growth (1988) (3)
- Model Semiconductor Surfaces: Arsenic Termination of the Ge(111), Si(111) and Si(100) Surfaces (1987) (3)
- GaAs – on – Si Epitaxy: Results for Coverage of ∼ 1 Monolayer (1987) (3)
- Group III selenides: Controlling dimensionality, structure, and properties through defects and heteroepitaxial growth (2021) (3)
- Summary Abstract: Core level spectroscopy of the GaAs‐on‐Si interface (1987) (2)
- Surface morphology of Cr: Ga2Se3 heteroepitaxy on Si(001) (2009) (2)
- Semiconductors, III–VI (1999) (2)
- One-dimensional electronic states in Ga2Se3 on Si(001):As (2010) (2)
- Novel Chalcogenide Buffer Layer for Oxide Heteroepitaxy on Si(001) (2005) (0)
- Kinetic Control of CaF 2 on Si(111) Growth Morphology (1993) (0)
- Polarization Dependent Ge and Si (111)2x1 Surface State Optical Absorption: A Test of surface Reconstruction Models (1985) (0)
- Formation and properties of silicon/fluorite heterostructures. Final report, June 1, 1994--May 31, 1997 (1997) (0)
- Atomic Structure of Si ( 111 ) : GaSe 1 x 1 (2000) (0)
- PHOTOTHERMAL DISPLACEMENT SPECTROSCOPY OF SURFACES AND THIN FILMS (1983) (0)
- Optical Properties and Atomic Structure of Cleaved Silicon and Germanium Surfaces as Determined by Photothermal Displacement Spectroscopy (1985) (0)
- Summary Abstract: Temperature dependence of surface state optical absorption (1986) (0)
- Models of Spinodal Decomposition in an Oxide Diluted Magnetic Semiconductor, Zn$_{1-x}$Co$_{x}$O (2010) (0)
- X-Ray Photoelectron Spectroscopy of Spinodal Decomposition in Zn 1x Co x O : Composition Dependence of Electronic Structure and Sputtering-Induced Co 0 Formation (2009) (0)
- Initial stages of Al_xSe y heteroepitaxial growth on Si(111) (2001) (0)
- Interaction of Se and GaSe with Si (1999) (0)
- Maria Goeppert-Mayer Award Lecture: Kinetic Control in Heteroepitaxial Gr (1996) (0)
- Room Temperature , Intrinsic Vacancy Mediated Ferromagnetism in Cr : Ga 2 Se 3 / (2010) (0)
- Semiconductor Surfaces and Interfaces Studied with Synchrotron Radiation (1989) (0)
- Σ3 Incoherent Lateral Micro-twin Boundary in Ga_2Se 3 Epitaxially Grown Thin Films (2001) (0)
- Controlling the growth morphology and phase segregation of Mn-doped Ga 2 Se 3 on Si(001) (2011) (0)
- Determination of Near-surface Ge and Si Site Occupation in Ge/Si(100) (1996) (0)
- Chemical Bonding and Lattice Mismatch in Semiconductorinsulator Heteroepitaxy: SrF 2 on Si(111) (1988) (0)
- Growth of II-VI nanostructures on GaSe(0001) and GaSe-terminated Si(111 (2001) (0)
- MnSe phase segregation during heteroepitaxy of Mn doped Ga2Se3 on Si(001) (2009) (0)
- Surface Modification of CaF 2 for Improved Heteroepitaxy (2001) (0)
- Band Gap and Phase Stability in (Al$_{\mathrm{x}}$Ga$_{\mathrm{1-x}})_{2}$O$_{3}$ Alloy Films (2014) (0)
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