Martin Kuball
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Physics
Martin Kuball's Degrees
- PhD Physics University of Oxford
- Masters Physics University of Oxford
- Bachelors Physics University of Oxford
Why Is Martin Kuball Influential?
(Suggest an Edit or Addition)According to Wikipedia, Martin Kuball is the chair of the Royal Academy of Engineering in Emerging Technologies, professor in physics at the University of Bristol, United Kingdom, and director of the Centre for Device Thermography and Reliability .
Martin Kuball's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- The 2018 GaN power electronics roadmap (2018) (619)
- Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control (2001) (336)
- Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy (2002) (324)
- Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs (2012) (240)
- Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices (2007) (231)
- Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures (2006) (217)
- Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy (2003) (177)
- A study of the phase diagram of (K,Na,Li)NbO3 determined by dielectric and piezoelectric measurements, and Raman spectroscopy (2007) (174)
- Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure (2010) (138)
- Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress (2010) (128)
- Raman scattering studies on single-crystalline bulk AlN under high pressures (2001) (120)
- Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section (2013) (119)
- Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy (2007) (119)
- Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping (2014) (118)
- Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm (2002) (117)
- Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications (2015) (108)
- Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy (2008) (107)
- Piezoelectric strain in AlGaN∕GaN heterostructure field-effect transistors under bias (2006) (106)
- Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths (2014) (101)
- Recombination dynamics in InGaN quantum wells (1996) (98)
- Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration (2019) (95)
- Micro-Raman temperature measurements for electric field assessment in active AlGaN-GaN HFETs (2004) (91)
- Raman spectroscopy of (K,Na)NbO3 and (K,Na)1−xLixNbO3 (2008) (87)
- Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors (2014) (86)
- Optical pump-and-probe measurement of the thermal conductivity of nitride thin films (2002) (84)
- Phonon lifetimes in bulk AlN and their temperature dependence (2000) (80)
- On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices (2015) (80)
- “Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs (2017) (79)
- Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors (2011) (78)
- Phonon lifetimes and phonon decay in InN (2005) (77)
- Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices. (2018) (76)
- Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties (2016) (76)
- Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates (2002) (73)
- Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling. (2017) (72)
- Ferroelectric domains and piezoelectricity in monocrystalline Pb(Zr,Ti)O3 nanowires (2007) (72)
- AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes (2011) (72)
- Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers (2009) (72)
- Improved Thermal Performance of AlGaN/GaN HEMTs by an Optimized Flip-Chip Design (2006) (70)
- Impact of buffer leakage on intrinsic reliability of 650V AlGaN/GaN HEMTs (2015) (67)
- Nitrogen-rich indium nitride (2004) (66)
- GaN nanoindentation: A micro-Raman spectroscopy study of local strain fields (2004) (65)
- Time‐resolved pump‐probe experiments with subwavelength lateral resolution (1996) (65)
- On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress (2012) (64)
- Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy (2009) (64)
- “ Leaky Dielectric ” Model for the Suppression of Dynamic R ON in Carbon Doped AlGaN / GaN HEMTs (64)
- Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs (2017) (61)
- A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution (2016) (60)
- Thermal stability of GaN investigated by Raman scattering (1998) (60)
- Deformation potentials of the E2(high) phonon mode of AlN (2002) (58)
- InN thin film lattice dynamics by grazing incidence inelastic x-ray scattering. (2011) (58)
- Micro‐Raman scattering spectroscopy study of Li‐doped and undoped ZnO needle crystals (2009) (55)
- Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties (1995) (54)
- Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode (2014) (53)
- Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors (2015) (53)
- Temperature Dependence of the Phonons of Bulk AlN (2000) (52)
- Lattice dynamics of wurtzite and rocksalt AlN under high pressure: Effect of compression on the crystal anisotropy of wurtzite-type semiconductors (2008) (52)
- Importance of impurity diffusion for early stage degradation in AlGaN/GaN high electron mobility transistors upon electrical stress (2010) (49)
- Gain characteristics of InGaN/GaN quantum well diode lasers (1998) (49)
- Raman scattering studies on single-crystalline bulk AlN: temperature and pressure dependence of the AlN phonon modes (2001) (48)
- Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices (2008) (48)
- Achieving the Best Thermal Performance for GaN-on-Diamond (2013) (48)
- Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates (2012) (48)
- Simultaneous determination of the lattice thermal conductivity and grain/grain thermal resistance in polycrystalline diamond (2017) (47)
- GAIN SPECTROSCOPY ON INGAN/GAN QUANTUM WELL DIODES (1997) (46)
- Raman spectral investigation of thiourea complexes. (2009) (45)
- Damage tolerance of nuclear graphite at elevated temperatures (2017) (45)
- Electrical and Thermal Performance of AlGaN/GaN HEMTs on Diamond Substrate for RF Applications (2013) (44)
- Angular dispersion of polar phonons in a hexagonal GaN–AlN superlattice (2001) (43)
- $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz (2013) (42)
- Raman characterization and stress analysis of AlN grown on SiC by sublimation (2002) (42)
- Crystal growth and properties of scandium nitride (2004) (42)
- Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs (2018) (41)
- Impact of diamond seeding on the microstructural properties and thermal stability of GaN-on-diamond wafers for high-power electronic devices (2017) (40)
- Near-field optical study of InGaN/GaN epitaxial layers and quantum wells (1998) (39)
- Contactless Thermal Boundary Resistance Measurement of GaN-on-Diamond Wafers (2014) (39)
- Surface quality and atomic structure of MBE-grown GaAs(100) prepared by the desorption of a protective arsenic layer (1996) (39)
- Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing (2015) (38)
- Raman mapping of epitaxial lateral overgrown GaN: Stress at the coalescence boundary (2001) (38)
- LASERS, OPTICS, AND OPTOELECTRONICS 397 Near-field optical spectroscopy using an incoherent light source (2000) (38)
- Temperature-Dependent Thermal Resistance of GaN-on-Diamond HEMT Wafers (2016) (37)
- A Raman spectroscopy study of InN (2004) (36)
- High-temperature processing of GaN: The influence of the annealing ambient on strain in GaN (1999) (36)
- Thermal mapping of defects in AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy (2005) (36)
- Temperature assessment of AlGaN/GaN HEMTs: A comparative study by Raman, electrical and IR thermography (2010) (36)
- Temperature analysis of AlGaN/GaN based devices using photoluminescence spectroscopy: Challenges and comparison to Raman thermography (2010) (35)
- Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier (2011) (35)
- Thermal conductivity of ultrathin nano-crystalline diamond films determined by Raman thermography assisted by silicon nanowires (2015) (34)
- New technique for sublimation growth of AlN single crystals (2001) (34)
- Insights into electroluminescent emission from AlGaN /GaN field effect transistors using micro-Raman thermal analysis (2006) (33)
- Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements (2013) (33)
- Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors (2014) (33)
- Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers (2012) (33)
- Leakage mechanisms in GaN-on-GaN vertical pn diodes (2018) (32)
- Raman scattering in hexagonal InN under high pressure (2004) (32)
- Thermal conductivity of bulk GaN—Effects of oxygen, magnesium doping, and strain field compensation (2014) (32)
- Raman Thermography of Peak Channel Temperature in $\beta$ -Ga2O3 MOSFETs (2019) (31)
- Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTs (2013) (31)
- Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance (2019) (30)
- Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AlN grown by the sublimation sandwich technique (2001) (30)
- Effect of grain size of polycrystalline diamond on its heat spreading properties (2016) (30)
- High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet micro-Raman scattering (2000) (30)
- “Kink” in AlGaN/GaN-HEMTs: Floating Buffer Model (2018) (29)
- Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias (2015) (29)
- Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN (2020) (28)
- Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs (2017) (28)
- CS MANTECH Conference (2007) (28)
- Substrate-directed formation of calcium carbonate fibres (2009) (28)
- Raman scattering and photoluminescence studies on Si/SiO2 superlattices (2001) (28)
- Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance (2011) (28)
- Diamond micro-Raman thermometers for accurate gate temperature measurements (2014) (28)
- Optical investigation of micrometer and nanometer-size individual GaN pillars fabricated by reactive ion etching (2002) (27)
- Surface Zeta Potential and Diamond Seeding on Gallium Nitride Films (2017) (27)
- Raman mapping, photoluminescence investigations, and finite element analysis of epitaxial lateral overgrown GaN on silicon substrates (2002) (27)
- Inelastic Light Scattering by Phonons in Hexagonal GaN–AlN Nanostructures (2001) (27)
- Atomic layer deposited α-Ga2O3 solar-blind photodetectors (2019) (27)
- Wafer-scale GaN HEMT performance enhancement by diamond substrate integration (2014) (26)
- A high efficiency 140W power amplifier based on a single GaN HEMT device for space applications in L-band (2012) (26)
- Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond. (2020) (25)
- Amorphous GaN Grown by Room Temperature Molecular Beam Epitaxy (2000) (25)
- The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability (2012) (25)
- High spatial resolution micro‐Raman temperature measurements of nitride devices (FETs and light emitters) (2005) (25)
- Vibrational and optical properties of GaN nanowires synthesized by Ni-assisted catalytic growth (2007) (25)
- Crystal growth of B12As2 on SiC substrate by CVD method (2005) (25)
- Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs (2018) (25)
- Integrated Raman - IR Thermography on AlGaN/GaN Transistors (2006) (25)
- Three-dimensional thermal analysis of a flip-chip mounted AlGaN/GaN HFET using confocal micro-Raman spectroscopy (2006) (23)
- Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs (2016) (23)
- Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interface (2015) (23)
- Field Dependent Self-Heating Effects in High-Power AlGaN/GaN HEMTs (2009) (23)
- Evidence for phonon-plasmon interaction in InN by Raman spectroscopy (2007) (23)
- Buffer-Induced Current Collapse in GaN HEMTs on Highly Resistive Si Substrates (2018) (23)
- Investigation of polarization-pinning mechanism in deep-line-etched vertical-cavity surface-emitting lasers (2000) (23)
- The Durability of Various Crucible Materials for Aluminum Nitride Crystal Growth by Sublimation (2004) (22)
- Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates (2017) (22)
- Energy band structure and optical response function of icosahedral B(12)As(2): A spectroscopic ellipsometry and first-principles calculational study (2010) (22)
- Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors (2014) (22)
- Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiNx Deposition (2017) (22)
- Hydrogen‐induced modification of the optical properties of the GaAs(100) surface (1995) (22)
- Fabrication of GaN nanowalls and nanowires using surface charge lithography (2008) (21)
- The effects of grain size and grain boundary characteristics on the thermal conductivity of nanocrystalline diamond (2016) (21)
- High-Resolution Raman Temperature Measurements in GaAs p-HEMT Multifinger Devices (2007) (21)
- AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics (2013) (21)
- GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity (2015) (20)
- Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation (2015) (20)
- Nano-fabrication of GaN pillars using focused ion beam etching (1999) (20)
- Degradation of AlGaN during high-temperature annealing monitored by ultraviolet Raman scattering (1999) (20)
- Current collapse in AlGaN/GaN transistors studied using time-resolved Raman thermography (2008) (20)
- (Invited) intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices: an industry perspective (2016) (20)
- Annealing effect of surface-activated bonded diamond/Si interface (2019) (20)
- Dynamic Operational Stress Measurement of MEMS Using Time-Resolved Raman Spectroscopy (2008) (19)
- Mechanism of hot electron electroluminescence in GaN-based transistors (2016) (19)
- Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25- $\mu\hbox{m}$ AlGaN/GaN HEMTs (2012) (19)
- Optical characterization of hierarchical ZnO structures grown with a simplified vapour transport method (2007) (19)
- Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN (2001) (18)
- Above bandgap thermoreflectance for non-invasive thermal characterization of GaN-based wafers (2018) (18)
- Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes (2001) (18)
- Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges (2013) (18)
- Improved thermal management for GaN power electronics: Silver diamond composite packages (2012) (17)
- Sublimation crystal growth of yttrium nitride (2010) (17)
- Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling. (2021) (17)
- Converse piezoelectric strain in undoped and Fe-doped AlGaN/GaN heterostructure field effect transistors studied by Raman scattering (2010) (17)
- Direct signature of strained GaN quantum dots by Raman scattering (2001) (17)
- Phase selectivity of microwave heating evidenced by Raman spectroscopy (2006) (17)
- Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device (2010) (17)
- Raman spectroscopy of B12As2 under high pressure (2004) (17)
- Raman scattering in GaN pillar arrays (2002) (17)
- Resonant Raman scattering on self-assembled GaN quantum dots (2001) (16)
- On-line tools for microscopic and macroscopic monitoring of microwave processing (2007) (16)
- Thermal stress modelling of diamond on GaN/III-Nitride membranes (2020) (16)
- Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution (2021) (16)
- A macro-scale ruck and tuck mechanism for deformation in ion-irradiated polycrystalline graphite (2021) (16)
- Photoluminescence and vibrational properties of nanostructured ZnSe templates (2007) (16)
- Semiconducting icosahedral boron arsenide crystal growth for neutron detection (2011) (15)
- Laser lift-off transfer of AlGaN/GaN HEMTs from sapphire onto Si: A thermal perspective (2009) (15)
- Finite element analysis of epitaxial lateral overgrown GaN: Voids at the coalescence boundary (2001) (15)
- Hexagonal Boron Nitride Single Crystal Growth from Solution with a Temperature Gradient (2020) (15)
- Room-temperature direct bonding of diamond and Al (2019) (15)
- Micro-Raman/Infrared Temperature Monitoring of Gunn Diodes (2008) (15)
- Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates (2012) (15)
- Negative dynamic Ron in AlGaN/GaN power devices (2017) (15)
- Free-standing GaN grown on epitaxial lateral overgrown GaN substrates (2003) (15)
- Thermal Properties and Reliability of GaN Microelectronics: Sub-Micron Spatial and Nanosecond Time Resolution Thermography (2007) (15)
- Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping (2012) (15)
- Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs (2015) (15)
- GaN-on-diamond technology platform: Bonding-free membrane manufacturing process (2020) (15)
- Thermal management of GaN-on-diamond high electron mobility transistors: Effect of the nanostructure in the diamond near nucleation region (2016) (14)
- Electron microscopy of gallium nitride growth on polycrystalline diamond (2015) (14)
- Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence (2015) (14)
- Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology (2019) (14)
- Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs (2017) (14)
- Resonant Raman spectroscopy on InN (2005) (14)
- Combined Infrared and Raman temperature measurements on device structures (2006) (13)
- GaN transistor reliability and instabilities (2014) (13)
- Reduction of Impact Ionization in GaAs-Based Planar Gunn Diodes by Anode Contact Design (2012) (13)
- Thermal conductivity and Seebeck coefficients of icosahedral boron arsenide films on silicon carbide (2010) (13)
- Impact ionisation electroluminescence in planar GaAs-based heterostructure Gunn diodes: Spatial distribution and impact of doping non-uniformities (2013) (13)
- Electric field distribution in AlGaN/GaN high electron mobility transistors investigated by electroluminescence (2010) (13)
- The Impact of Hot Electrons and Self-Heating During Hard-Switching in AlGaN/GaN HEMTs (2020) (13)
- Micro‐Raman Study of Wurtzite AlN Layers Grown on Si(111) (2001) (13)
- Thermal boundary resistance of direct van der Waals bonded GaN-on-diamond (2020) (13)
- Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V (2015) (12)
- Bulk AlN crystal growth by direct heating of the source using microwaves (2004) (12)
- Phonon deformation potentials of the E2(high) phonon mode of AlxGa1−xN (2004) (12)
- Influence of microstructural defects on the thermal conductivity of GaN: A molecular dynamics study (2013) (12)
- Raman mapping investigations and finite element analysis of double epitaxial lateral overgrown GaN on sapphire substrates (2002) (12)
- Interface states and impurities in MOS structures with very thin tunneling barriers (1987) (12)
- Solvent dependent study of carbonyl vibrations of 3‐phenoxybenzaldehyde and 4‐ethoxybenzaldehyde by Raman spectroscopy and ab initio calculations (2009) (11)
- Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs (2015) (11)
- Passivation of Layered Gallium Telluride by Double Encapsulation with Graphene (2019) (11)
- Self-Heating Characterization of $\beta$ -Ga2O3 Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography (2020) (11)
- Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability (2012) (11)
- Defect structures in B12As2 epitaxial layers grown on (0001) 6H-SiC (2008) (11)
- Effect of pressure on the Raman scattering of wurtzite AlN (2007) (11)
- Probing temperature gradients within the GaN buffer layer of AlGaN/GaN high electron mobility transistors with Raman thermography (2014) (11)
- Field-effect saccharide sensing using AlGaN/GaN heterostructures and boronic acid based chemical receptors (2011) (10)
- Impact ionization in N-polar AlGaN/GaN high electron mobility transistors (2014) (10)
- Evaluation of Pulsed I–V Analysis as Validation Tool of Nonlinear RF Models of GaN-Based HFETs (2018) (10)
- Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation (2014) (10)
- Identification of electronic traps in AlGaN/GaN HEMTs using UV light-assisted trapping analysis (2010) (10)
- Novel packaging solutions for GaN power electronics: Silver-diamond composite packages (2010) (10)
- Need for Defects in Floating-Buffer AlGaN/GaN HEMTs (2014) (10)
- Submicrometer Resolution Hyperspectral Quantum Rod Thermal Imaging of Microelectronic Devices (2019) (9)
- Direct optical measurement of hot‐phonons in active AlGaN/GaN devices (2008) (9)
- Nanosecond transient thermoreflectance method for characterizing anisotropic thermal conductivity. (2019) (9)
- Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD (2019) (9)
- Planar gunn diode characterisation and resonator elements to realise oscillator circuits (2013) (9)
- Effect of Impurities on Raman and Photoluminescence Spectra of AlN Bulk Crystals (2003) (9)
- Raman Scattering in GaN/AlN Quantum Dot Structures (1999) (9)
- Effects of interlayer interactions on the nanoindentation response of freely suspended multilayer gallium telluride (2019) (9)
- Impact of carbon in the buffer on power switching GaN-on-Si and RF GaN-on-SiC HEMTs (2021) (9)
- Nitride-Based Emitters on SiC Substrates (1997) (9)
- On the discrimination between bulk and surface traps in AlGaN/GaN HEMTs from trapping characteristics (2012) (9)
- Characterization of the Interfacial Toughness in a Novel “GaN-on-Diamond” Material for High-Power RF Devices (2019) (9)
- Status of Nitride Based Light Emitting and Laser Diodes on SiC (1997) (9)
- High-temperature annealing of AlGaN: Stress, structural, and compositional changes (2003) (8)
- Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes (2019) (8)
- Free nucleation of aluminum nitride single crystals in HPBN crucible by sublimation (2005) (8)
- Variable range hopping mechanism and modeling of isolation leakage current in GaN-based high-electron-mobility transistors (2020) (8)
- Low Field Vertical Charge Transport in the Channel and Buffer Layers of GaN-on-Si High Electron Mobility Transistors (2020) (8)
- On the origin of dynamic Ron in commercial GaN-on-Si HEMTs (2017) (8)
- Optimizing GaN-on-Diamond Transistor Geometry for Maximum Output Power (2014) (8)
- Improvement of Electron Transport Property and on-Resistance in Normally-OFF Al₂O₃/AlGaN/GaN MOS-HEMTs Using Post-Etch Surface Treatment (2020) (8)
- Solid immersion lenses for enhancing the optical resolution of thermal and electroluminescence mapping of GaN-on-SiC transistors (2015) (8)
- Glass-Glass Transitions by Means of an Acceptor-Donor Percolating Electric-Dipole Network (2017) (8)
- Thermal and Piezoelectric Stress in Operating AlGaN / GaN HFET Devices and Effect of the Fe Doping in the GaN Buffer Layer (2009) (8)
- Raman spectroscopic studies of vibrational relaxation and non‐coincidence effect in substituted benzaldehyde binary mixtures (2009) (7)
- Growth Mechanisms and Defect Structures of B12As2 Epilayers Grown on 4H-SiC Substrates (2011) (7)
- Optics of Semiconductors and Their Nanostructures (2004) (7)
- Investigation of the GaN-on-GaAs interface for vertical power device applications (2014) (7)
- Raman-IR micro-thermography tool for reliability and failure analysis of electronic devices (2008) (7)
- Focused ion beam etching of GaN (1999) (7)
- Disturbed and scattered: The Path of thermal conduction through diamond lattice (2016) (7)
- Impact of thinning the GaN buffer and interface layer on thermal and electrical performance in GaN-on-diamond electronic devices (2019) (7)
- GaN devices for microwave applications [FET/HEMT] (2002) (7)
- Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence (2015) (7)
- Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients (2018) (7)
- Hot-Electron Electroluminescence Under RF Operation in GaN-HEMTs: A Comparison Among Operational Classes (2017) (7)
- Thermal Profiles Within the Channel of Planar Gunn Diodes Using Micro-Particle Sensors (2017) (7)
- Thermal management and device failure assessment of high-power AlGaN/GaN HFETs (2002) (7)
- Materials Research Society Fall Meeting, Boston 2000 in Mat. Res. Soc. Symp. Proc (2001) (6)
- Impact of buffer charge on the reliability of carbon doped AlGaN/GaN-on-Si HEMTs (2016) (6)
- Scanning thermal microscopy for accurate nanoscale device thermography (2021) (6)
- Single-crystalline B12As2 on m-plane (11¯00) 15R-SiC (2008) (6)
- Improved GaN-on-SiC Transistor Thermal Resistance by Systematic Nucleation Layer Growth Optimization (2013) (6)
- Mechanism for Improved Quality B 12 As 2 Epitaxial Films on (0001) 4H-SiC Substrates by Tilting toward [1-100] Direction (2010) (6)
- Porous GaN/SiC templates for homoepitaxial growth: effect of the built-in stress on the formation of porous structures (2004) (6)
- Raman scattering in InN films and nanostructures (2004) (6)
- Resonant Raman scattering in (Al,Ga)N/GaN quantum well structures (2000) (6)
- Diamond Seed Size and the Impact on Chemical Vapor Deposition Diamond Thin Film Properties (2020) (6)
- Piezo-optics of InP in the visible-ultraviolet range (1998) (6)
- Thermal characterization of high voltage GaN-on-Si Schottky Barrier Diodes (SBD) for designing an on-chip thermal shutdown circuit for a power HEMT (2015) (6)
- Nanosecond Time-Resolved Raman Thermography: Probing Device and Channel Temperature in Pulsed-Operated GaN and GaAs HEMTs (2008) (6)
- Behavior of phonons in short period GaN-AlN superlattices (2004) (6)
- Multi-phonon resonant Raman scattering in GaN/AlxGa1-xN quantum wells (1999) (5)
- Correlating Thermionic Emission with Specific Surface Reconstructions in a <100> Hydrogenated Single-Crystal Diamond. (2020) (5)
- Lateral Charge Distribution and Recovery of Dynamic $R_{\mathrm{\scriptscriptstyle ON}}$ in AlGaN/GaN HEMTs (2018) (5)
- Thermal Design Rules of AlGaN/GaN-Based Microwave Transistors on Diamond (2021) (5)
- Lateral charge spreading and device-to-device coupling in C-doped AlGaN/GaN-on-Si wafers (2019) (5)
- Thermal analysis of semiconductor devices and materials - Why should I not trust a thermal simulation ? (2019) (5)
- Time‐resolved nanosecond sub‐micron resolution thermal analysis of high‐power AlGaN/GaN HFETs (2007) (5)
- Isotopically Enhanced Thermal Conductivity in Few-Layer Hexagonal Boron Nitride: Implications for Thermal Management (2020) (5)
- High frequency guided mode resonances in mass-loaded, thin film gallium nitride surface acoustic wave devices (2019) (5)
- Raman analysis of single crystalline bulk aluminium nitride: temperature dependence of the phonon frequences (2000) (5)
- Stress at the Coalescence Boundary of Epitaxial Lateral Overgrown GaN (2001) (5)
- Characterization of Aluminum Nitride Crystals Grown by Sublimation (2001) (5)
- STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (1999) (5)
- Floating body effects in carbon doped GaN HEMTs (2015) (5)
- Unusual Deformation and Fracture in Gallium Telluride Multilayers (2022) (5)
- GaN Reliability Enhancement and Technology Transfer Initiative (GREAT) (2015) (5)
- Micro-Raman Spectroscopy: Self-Heating Effects In Deep UV Light Emitting Diodes (2002) (5)
- Thermal properties of AlGaN/GaN high electron mobility transistors on 4H and 6H SiC substrates (2014) (5)
- Impact of Polymer Residue Level on the In-Plane Thermal Conductivity of Suspended Large-Area Graphene Sheets. (2021) (5)
- Reliability optimization for wide bandgap devices: Recent developments in high-spatial resolution thermal imaging of GaN devices (2005) (5)
- The Growth of Gallium Nitride Films Produced by Reactive Sputtering at Low Temperature (1999) (5)
- Impact of the field induced polarization space-charge on the characteristics of AlGaN/GaN HEMT: Self-consistent simulation study (2009) (5)
- Resonant Raman characterization of InAlGaN/GaN heterostructures (2006) (5)
- A distributed electro-thermal model of AlGaN/GaN HEMT power-bar derived from the elementary cell model (2012) (5)
- GaN on Diamond with Ultra-Low Thermal Barrier Resistance (2016) (4)
- Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs (2016) (4)
- Reverse-biased induced mechanical stress in AlGaN/GaN power diodes (2016) (4)
- Liquid crystal electrography: Electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistors (2014) (4)
- Elimination of Degenerate Epitaxy in the Growth of High Quality B 12 As 2 Single Crystalline Epitaxial Films (2011) (4)
- Raman scattering, photoluminescence, and X-ray diffraction studies of GaN layers grown on misoriented sapphire substrates (2002) (4)
- Improvements in thermionic cooling through engineering of the heterostructure interface using Monte Carlo simulations (2013) (4)
- Subthreshold Mobility in AlGaN/GaN HEMTs (2016) (4)
- A Temperature Analysis of High-power AlGaN/GaN HEMTs (2006) (4)
- GaN Power Transistors with Integrated Thermal Management (2013) (4)
- Focused ion beam etching of nanometer-size GaN/AlGaN device structures and their optical characterization by micro-photoluminescence/Raman mapping (1999) (4)
- The influence of the annealing ambient on strain and doping in GaN during high-temperature processing (1999) (4)
- Flip Chip Mounting for Improved Thermal Management of AlGaN/GaN HFETs (2005) (4)
- Surface charge lithography for GaN micro- and nanostructuring (2009) (4)
- Manga: Manufacturable GaN (2011) (4)
- Manga: Manufacturable GaN SiC substrates and GaN epi wafer supply chain (2014) (4)
- High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation (2019) (4)
- Comprehensive thermal analysis of pulsed GaAs HPAs for lifetime estimation (2012) (4)
- Polarity dependence in Cl2-based plasma etching of GaN, AlGaN and AlN (2020) (4)
- An investigation of phonon decay in B12As2 by Raman scattering spectroscopy (2008) (3)
- Structural stability of β-Ga2O3 under ion irradiation (2022) (3)
- Electronic excitations in B12As2 and their temperature dependence by vacuum ultraviolet ellipsometry (2010) (3)
- Structural and optical properties of MOCVD InAlN epilayers (2005) (3)
- Rapid Characterization of GaN-on-diamond Interfacial Thermal Resistance Using Contactless Transient Thermoreflectance (2015) (3)
- Complementary techniques expose GaN transistor defects (2005) (3)
- Novel thermal management of GaN electronics - Diamond substrates (2015) (3)
- Novel n-type Mg2B14 on silicon diode: Demonstration of a thermal solid state neutron detector (2013) (3)
- A trapping tolerant drain current based temperature measurement of β-Ga2O3 MOSFETs (2022) (3)
- Defect structures in B 12 As 2 epitaxial layers grown on „ 0001 ... 6 H-SiC (2008) (3)
- On the impact of Carbon-doping and channel thickness on the dynamic Ron of 650V GaN power devices (2015) (3)
- Thermal Transport in Superlattice Castellated Field Effect Transistors (2019) (3)
- Growth of rhombohedral B12P2 thin films on 6H-SiC(0001) by chemical vapor deposition (2003) (3)
- Field Plate Designs in All-GaN Cascode Heterojunction Field-Effect Transistors (2019) (3)
- Micro‐Raman analysis of GaAs Schottky barrier solar cell (2011) (3)
- On wafer thermal characterization of miniature gallium arsenide microcoolers with thermal loading from DC probes (2014) (3)
- Characterization of trap states in buried nitrogen-implanted β-Ga2O3 (2020) (3)
- Ultra-high power semiconductor devices: heat-sinking using GaN-on-diamond (2017) (3)
- Time Resolved Hyperspectral Quantum Rod Thermography of Microelectronic Devices: Temperature Transients in a GaN HEMT (2020) (3)
- Novel Infra-Red (IR) Thermal Measurements on GaAs Micro-coolers (2012) (2)
- CS MANTECH 2016 - International Conference on Compound Semiconductor Manufacturing Technology (2016) (2)
- Link between silicon nitride stoichiometry, vertical epitaxial conductivity and current collapse in AlGaN/GaN power devices (2017) (2)
- Integrated Raman – IR Thermography for Reliability and Performance Optimization, and Failure Analysis of Electronic Devices (2007) (2)
- Planar Gunn diode characterisation and resonators (2013) (2)
- Early stage degradation of InAlN/GaN HEMTs during electrical stress (2012) (2)
- Self-Heating Effects in High-Power AlGaN/GaN HFETs (2001) (2)
- Breakdown Mechanisms in β-Ga2O3 Trench-MOS Schottky-Barrier Diodes (2022) (2)
- Growth Structure, and Optical Properties of III-Nitride Quantum Dots (2003) (2)
- Vertical field inhomogeneity associated with threading dislocations in GaN high electron mobility transistor epitaxial stacks (2021) (2)
- Transient thermoreflectance for device temperature assessment in pulsed-operated GaN-based HEMTs (2016) (2)
- Self-Heating Effects in Multi-Finger AlGaN/GaN HFETs (2002) (2)
- Silver diamond composite as a new packaging solution: A thermo-mechanical stability study (2011) (2)
- Understanding of Leading-Edge Protection Performance Using Nano-Silicates for Modification (2019) (2)
- Micro-cooler enhancements by barrier interface analysis (2014) (2)
- SnTe-doping of GaAs grown by atomic layer molecular beam epitaxy (1995) (2)
- Interface property and band offset investigation of GaN based MOS heterostructures with diffusion-controlled interface oxidation technique (2020) (2)
- On the identification of trap location in AlGaN/GaN HEMTs during electrical stress (2010) (2)
- In situ Thermoreflectance Characterization of Thermal Resistance in Multilayer Electronics Packaging (2022) (2)
- Impact of surface charge on the I-V characteristics of an AlGaN/GaN HEMT (2009) (2)
- Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation (2022) (2)
- InGaN/GaN lasers grown on SiC (1998) (2)
- Evaluating the interfacial toughness of GaN-on-diamond with an improved analysis using nanoindentation (2022) (2)
- Analysis of strained surface layers of ZnO single crystals after irradiation with intense femtosecond laser pulses (2013) (2)
- Ohmic Contact-Free Mobility Measurement in Ultra-Wide Bandgap AlGaN/AlGaN Devices (2018) (2)
- Suppression of charge trapping in ON-state operation of AlGaN/GaN HEMTs by Si-rich passivation (2021) (2)
- The Impact of Ti/Al Contacts on AlGaN/GaN HEMT Vertical Leakage and Breakdown (2018) (2)
- Multi-channel power transistors shape up (2019) (2)
- Phonon lifetimes and decay channels in single-crystalline bulk AlN (2001) (2)
- with InGaN back-barrier (2011) (2)
- 3-D Printed Microjet Impingement Cooling for Thermal Management of Ultrahigh-Power GaN Transistors (2021) (2)
- GAN BUFFER DESIGN: ELECTRICAL CHARACTERIZATION AND PREDICTION OF THE EFFECT OF DEEP LEVEL CENTERS IN (2013) (2)
- Simultaneous measurement of optical and RF behavior under CW and pulsed Fully Active Harmonic Load-Pull (2016) (2)
- A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: a complete depth-resolved investigation (2020) (2)
- High Temperature Annealing of AlGaN: Stress and Composition Changes (2003) (2)
- Sublimation growth of aluminum nitride-silicon carbide alloy crystals on SiC(0001) substrates (2004) (2)
- Advances in AlGaN/GaN/SiC Microwave Devices (2007) (1)
- GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A. (2006) (1)
- Low Thermal Budget Growth of Near‐Isotropic Diamond Grains for Heat Spreading in Semiconductor Devices (2022) (1)
- Design and Manufacture of Edge Termination in Vertical GaN Diodes: Electric Field Distribution Probed by Second Harmonic Generation (2022) (1)
- Novel thermal management and its analysis in GaN electronics (2014) (1)
- Analysis of polarization pinning in vertical-cavity surface-emitting lasers using etched trenches (1999) (1)
- Erratum: Piezo-optics of InP in the visible-ultraviolet range [Phys. Rev. B57, 4432 (1998)] (1999) (1)
- Reliability Assessment of a New Power Electronics Packaging Material: Silver Diamond Composite (2013) (1)
- Near-field optical study of InGaN/GaN quantum wells (1998) (1)
- Molecular dynamics study of thermal transport across Ga2O3–diamond interfaces (2023) (1)
- Influence of packaging materials on GaN RF power devices (2015) (1)
- Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances (2011) (1)
- Junction temperature measurements and reliability of GaN FETs (2013) (1)
- Electron Trapping in GaN-on-Si Power HEMTs (2015) (1)
- Nitride lasers on SiC substrates (1998) (1)
- Gallium nitride phononic integrated circuits platform for GHz frequency acoustic wave devices (2022) (1)
- Micro-raman scattering and micro-photoluminescence on GaN materials grown on sapphire by metalorganic chemical vapor deposition (2000) (1)
- Demonstration of a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC (1997) (1)
- The International Conference on Compound Semiconductor Manufacturing Technology, Vancouver 2006 (2006) (1)
- Noise Analysis of the Leakage Current in Time-Dependent Dielectric Breakdown in a GaN SLCFET (2021) (1)
- GaN-on-diamond: Robust mechanical and thermal properties (2016) (1)
- Electrical and Thermal Performance of Ga₂O₃–Al₂O₃–Diamond Super-Junction Schottky Barrier Diodes (2021) (1)
- Thermal characterization of direct wafer bonded Si-on-SiC (2022) (1)
- Determination of the Mode Grüneisen Parameter of AlN using different Fits on Experimental High Pressure Data (2002) (1)
- High-Speed Electro-Thermal Measurements in RF Power Amplifiers Using Thermo-Reflectance (2022) (1)
- Reliability of High-Speed Devices: Probing of Self-Heating with Nanosecond Time-Resolution (2007) (1)
- Deep Ultraviolet Raman Scattering for the Monitoring of High‐Temperature Processing of AlGaN (1999) (1)
- UV-induced change in channel conductivity in AlGaN/GaN high electron mobility transistors to measure doping (2021) (1)
- The Use of Micro-Raman Spectroscopy to Monitor High-Pressure High-Temperature Annealing of Ion-Implanted GaN Films (1999) (1)
- Fabrication of photonic crystal templates using holographic optical tweezers and adhesion via entropic attraction (2008) (1)
- Investigation of thin film growth of B[12]As[2] by chemical vapor deposition. (2003) (1)
- Current collapse and kink effect in GaN RF HEMTs: the key role of the epitaxial buffer (2020) (1)
- Gallium nitride phononic integrated circuits for future RF front-ends (2021) (1)
- On Phonon Confinement Effects and Free Carrier Concentration in GaN Quantum Dots (2001) (1)
- Gallium nitride based ballistic electron acceleration negativedifferentialconductivity diodes for potential THZ applications (2005) (1)
- Self oscillations of a bistable element in two coupled hybrid ring resonators (1995) (1)
- Investigation of the spatio-temporal development of bistable optical switching in thin CdS crystals using a two-exciting-beam geometry (1995) (1)
- Novel all-around diamond integration with GaN HEMTs demonstrating highly efficient device cooling (2022) (1)
- 2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014 (2014) (1)
- Ultrawide bandgap Ga2O3 technologies: benefits of heterogenous integration (2023) (0)
- Kuball, M. (2015). Rapid Characterization of GaN-on-diamond Interfacial Thermal Resistance Using Contactless Transient Thermoreflectance. In Proceedings of 2015 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH): May 18th-21st, 2015, Scottsdale, Arizona, USA (pp (2015) (0)
- Gallium Nitride distributed Bragg Reflector cavity for integrated photonics applications (2012) (0)
- Transient thermoreflectance wafer mapping for process control and development: GaN-on-Diamond (2017) (0)
- Impact of buffer doping on GaN device performance (2007) (0)
- Research data supporting "Atomic layer deposited α-Ga2O3 solar-blind photodetectors" (2019) (0)
- The impact of buffer design on GaN HEMTs (2020) (0)
- Interfacial strength and fracture toughness in integrated semiconductor materials (2018) (0)
- Raman Analysis of Inverse Vulcanised Polymers (2023) (0)
- Development of GaN-based Nanosensors using Surface Charge Lithography (2011) (0)
- 16.2 Need for Defects in Floating-Buffer AlGaN/GaN HEMTs (2014) (0)
- Conf. on In-Plane Semiconductor Lasers III, January 27-29, 1999 in Proc. of Soc. Photo-Optical Instr. Eng (1999) (0)
- Impact of step edges on trapping behavior in N-polar GaN HEMTs (2011) (0)
- Integrated Raman- IRThermography onAlGaN/GaN Transistors (2006) (0)
- Origins of twinned microstructures in B12As2 epilayers grown on(0001) 6H-SiC and their influence on physical properties (2009) (0)
- BUFFER DESIGN : ELECTRICAL CHARACTERIZATION AND PREDICTION OF THE EFFECT OF DEEP LEVEL CENTERS IN G A N / A L G A N HEMT S (2012) (0)
- Non-invasive Thermal Resistance Measurement for GaN Wafer Process Control and Optimization (2018) (0)
- Residual stress evaluation of GaN epitaxial layers transferred onto Si (100) substrate (2018) (0)
- GaN, AlN, InN and Related Materials (Materials Research Society Symposium Proceedings, vol 892) (2006) (0)
- Characterization and Growth Mechanism of B 12 As 2 Epitaxial Layers Grown on (1-100) 15R-SiC (2008) (0)
- Electrical and thermal characterisation of liquid metal thin-film Ga$$_2$$O$$_3$$–SiO$$_2$$ heterostructures (2023) (0)
- Self-Assembled Microstructures with Localized Graphene Domains in an Epoxy Blend and Their Related Properties (2022) (0)
- Near-field optical stydy of InGaN/GaN quantum wells (1998) (0)
- Fabrication of integrated planar gunn diode andmicro-cooler on GaAs substrate (2013) (0)
- Time-resolved pump-probe experiments with 0.1 micron resolution (1996) (0)
- Effect of annealing temperature on diamond/Si interfacial structure (2019) (0)
- Photonics West, San Jose, 2001 in Proc. of SPIE (2001) (0)
- Solution Growth and Characterization of Icosahedral Boron Arsenide (B 12 As 2 ) (2011) (0)
- New GaN Power-Electronics Packaging Solutions: A Thermal Analysis Using Raman Thermography (2010) (0)
- Attempt to Grow α-Rhombohedral Boron Crystals in Copper Solvent (2009) (0)
- Growth of Boron Carbide Crystals from a Copper Flux (2009) (0)
- Micro-Raman scattering and microphotoluminescence on GaN materials grown on sapphire by metalorganic vapor deposition (2000) (0)
- Ga2O3 – diamond for next generation power electronics (2022) (0)
- Surface-charge Lithography for the Fabrication of Gallium Nitride Based Gas Sensors (2009) (0)
- International Conference on Nanotechnologies and Biomedical Engineering 2011, Chisinau Moldova (2011) (0)
- Field Plate in All-GaN Cascode Heterojunction Field-Effect (2019) (0)
- Publisher's Note: Glass-Glass Transitions by Means of an Acceptor-Donor Percolating Electric-Dipole Network [Phys. Rev. Applied 8, 054018 (2017)] (2018) (0)
- Thin Solid Films, E-MRS, Strasbourg/France 1999 (2000) (0)
- Residual stress evaluation of single crystal diamond bonded to Si substrate (2017) (0)
- Int. Workshop on Nitride Semiconductors (IWN 2002) Aachen, Germany July 2002 (2002) (0)
- Localization of off-stress-induced damage in AlGaNGaN HEMTs by means of low frequency 1/f noise measurements (2013) (0)
- Tuning the interlayer microstructure and residual stress of buffer-free direct bonding GaN/Si heterostructures (2023) (0)
- Peak channel temperature determination for an AlGaN/GaN HEMT with Raman Thermography and MTTF extraction for long term reliability (2022) (0)
- (Invited) GaN-on-Diamond Electronics: The Next Generation Microwave Technology (2017) (0)
- (Invited) Diamond - the Unknowns and Challenges to Make It Work for GaN Electronics (2016) (0)
- Thermal Management of GaN Electronics (2016) (0)
- UK GaN Consortium Meeting, London, UK (1999) (0)
- AlGaN/GaNに及ぼすSiC FETのためのTi及びTaベースOhm接触の形態学的および電気的比較【Powered by NICT】 (2017) (0)
- 10b.5 Impact Ionization in AlGaN/GaN HEMTs with InGaN Back-Barrier (2011) (0)
- Design and fabrication of air/semiconductor Bragg gratings for short wavelength nitride-based lasers (2001) (0)
- Effect of Manufacture on the Microstructure of GaN-on-Diamond (2017) (0)
- Gain spectroscopy on InGaN quantum well diodes (1997) (0)
- Modelling of impedance dispersion in lateral β-Ga2O3 MOSFETs due to parallel conductive Si-accumulation layer (2023) (0)
- Source of correlated photon pairs for quantum information using photonic crystal fiber (2005) (0)
- Raman mapping and finite element analysis of epitaxial lateral overgrown GaN on sapphire substrates (2002) (0)
- Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by (2019) (0)
- Reliability challenges for GaN-based FETs (2016) (0)
- Heat Transport across Interfaces for the Optimization of Heat Sinking in Device Applications (2021) (0)
- CLEO/QELS, Balimore, USA (2005) (0)
- Integration of Planar Gunn Diode with Micro-Cooler on GaAs Substrate (2013) (0)
- Defect Structures of B 12 As 2 Epilayers Grown on c-plane and a-plane 6H-SiC Substrates (2007) (0)
- Channel temperature determination for GaN HEMT lifetime testing – Impact of package and device layout (2019) (0)
- Fabrication of GaN and Diamond Direct Bonding for High Output Power Device Applications (2019) (0)
- Proceedings of 2013 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) (2014) (0)
- Proceedings of WiPDA (2015) (0)
- Single-crystalline B[subscript]12As[subscript]2 on m-plane (1(1)over-bar00) 15R-SiC (2008) (0)
- Kuball, M. (2012). Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination (2012) (0)
- Design: Electrical Characterization and Prediction of the Effect of Deep Level Centers in GaN/AIGaN HEMTs. In Proceedings of 2013 International Conference on Compound Semiconductor Manufacturing Technology (CS (2013) (0)
- Multi-channel power transistors shape up (2019) (0)
- Kuball, M. (2012). Reduction of Impact Ionization in GaAs-Based Planar Gunn Diodes by Anode Contact Design. IEEE Transactions on Electron Devices, 59(3), 654-660. DOI: 10.1109/TED.2011.2177094 (2011) (0)
- Novel thermal management of power electronic devices:high power high frequency planar gunn diodes (2013) (0)
- Interfacial fracture toughness of GaN film on diamond substrate for application in ultra-high power RF devices (2019) (0)
- Electrical and thermal characterisation of liquid metal thin-film Ga\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$_2 (2023) (0)
- Novel Raman spectroscopy imaging in electronic devices: focus on device reliability (2012) (0)
- CS MANTECH 2016 (2016) (0)
- A study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy (2000) (0)
- 17.3 Temperature Measurement and Modeling of Low Thermal Resistance GaN-on-Diamond Transistors (2013) (0)
- Theory of resonant Raman scattering under an electric field (1996) (0)
- NUMERICAL SIMULATION OF HEAT TRANSFER ENHANCEMENT FOR COPPER FOAM HEAT SINK IN ELECTRONIC DEVICES USING WATER BASED BN NANOFLUIDS (2018) (0)
- Mechanism for Improved Quality B12As2 Epitaxial Films on (0001) 4H-SiC Substrates Offcut towards [1-100] (2010) (0)
- Nitride-Based Light Emitting Diodes and Laser Diodes: Optical Properties and Applications (2004) (0)
- Dynamic $\mathrm{R}_{\mathrm{ON}}$ in $\beta$-Ga2O3 MOSFET Power Devices (2019) (0)
- Gain Spectroscopy on InGaN/GaN Quantum Well Laser Diodes (1998) (0)
- Near-field microscopy of InGaN/GaN quantum wells (1998) (0)
- Surface charge lithography for GaN nano-scale device fabrication (2010) (0)
- Electrical and thermal characterisation of liquid metal thin-film Ga[Formula: see text]O[Formula: see text]-SiO[Formula: see text] heterostructures. (2023) (0)
- Fe-doped AlGaN/GaN HEMTs: Kink-effect screening using yellow luminescence? (2013) (0)
- 11th Int. Conf. on Phonon Scattering in Condensed Matter (PHONONS 2004). St. Petersburg, July 2004 (2004) (0)
- The impact of leakage on dynamic RON in GaN-on-Si HEMTs (2020) (0)
- Therminic, Nice, France, 2006 (2006) (0)
- The Influence of Noise and of Spatio-Temporal Nonuniformity on the Evolution of Optically Nonlinear Systems (1992) (0)
- Back bias ramping and photoionization spectroscopy analysis of GaN-on-Si HFETs (2016) (0)
- Study of Drain Injected Breakdown Mechanisms in AlGaN/GaN-on-SiC HEMTs (2022) (0)
- Investigation of Deformation and Fracture Mechanisms in Two-dimensional Gallium Telluride Multilayers Using Nanoindentation (2022) (0)
- Optical losses and light confinement in TiO2/GaN/sapphire light guiding structures and InGaN/GaN/AIGaN MQW laser diodes (1999) (0)
- Device-to-device coupling via lateral conduction within the epitaxy in C-doped AlGaN/GaN-on-Si HEMTs (2018) (0)
- Extended Abstracts of WOCSDICE-EXMATEC-2014, Delphi, Greece (2014) (0)
- Reliability of GaN Electronics: Novel Electrical Result (2013) (0)
- Phonons and holes in magnesium doped GaN (1998) (0)
- Defect structures in B[subscript]12As[subscript]2 epitaxial layers grown on (0001) 6H-SiC (2008) (0)
- InGaN/GaN MQW SCH lasers grown on SiC (1999) (0)
- electroluminescence in planar GaAs-based heterostructure Gunn diodes: Spatial distribution and impact of doping (2013) (0)
- Impact Ionisation on Planar GaAs Gunn Diodes: Analysis and Reduction by Anode Desigb (2012) (0)
- Raman spetroscopy of B 12 As 2 under high pressure (2004) (0)
- Failure Investigations on AlGaN/GaN HEMTs for Different Sheet Resistances by Means of Raman Thermography (2010) (0)
- Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration (2019) (0)
- AlGaN/GaN superlattice-based multichannel RF transistors for high linearity and reliability: A simplified simulation approach. (2023) (0)
- Gain Spectroscopy on InGaNlGaN Quantum Well Laser Diodes (1998) (0)
- Phonon Lifetimes and Phonon Decay Channels in Single Crystalline Bulk Aluminum Nitride (2000) (0)
- (Invited) GaN-on-Diamond RF Transistors: The Next Generation Electronics (2018) (0)
- Flux growth of cubic boron phosphide crystals (2012) (0)
- A Study of Annealed GaN Grown by Molecular Beam Epitaxy Using Photoluminescence Spectroscopy. (1999) (0)
- C. Middleton et al. APEX 2018 (2019) (0)
- Gain spectroscopy in lnGaN/GaN quantum well diodes (1997) (0)
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