Massimo V. Fischetti
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Engineering
Massimo V. Fischetti's Degrees
- PhD Electrical Engineering Stanford University
- Masters Electrical Engineering Stanford University
- Bachelors Electrical Engineering Stanford University
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(Suggest an Edit or Addition)Massimo V. Fischetti's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys (1996) (1349)
- Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects. (1988) (874)
- Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering (2001) (697)
- Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport (1991) (537)
- Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness (2003) (460)
- Monte Carlo study of electron transport in silicon inversion layers. (1993) (413)
- Silicon CMOS devices beyond scaling (2006) (401)
- Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity (2007) (296)
- Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks (2003) (283)
- Monte Carlo simulation of a 30 nm dual-gate MOSFET: how short can Si go? (1992) (277)
- Theory of high-field electron transport in silicon dioxide. (1985) (220)
- Understanding hot‐electron transport in silicon devices: Is there a shortcut? (1995) (208)
- On the enhanced electron mobility in strained-silicon inversion layers (2002) (194)
- Quantum effects in the early universe. I. Influence of trace anomalies on homogeneous, isotropic, classical geometries (1979) (171)
- Comments on "Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. II. Submicrometer MOSFETs" [with reply] (1991) (162)
- Impact ionization in silicon (1993) (154)
- Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion (2001) (152)
- Generation of positive charge in silicon dioxide during avalanche and tunnel electron injection (1985) (150)
- Modeling of Surface-Roughness Scattering in Ultrathin-Body SOI MOSFETs (2007) (146)
- Monte Carlo analysis of semiconductor devices: the DAMOCLES program (1990) (146)
- Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability (2001) (146)
- Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures (2001) (131)
- Model for the generation of positive charge at the Si-SiO2 interface based on hot-hole injection from the anode. (1985) (126)
- Monte-Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300 K (1988) (121)
- Master-equation approach to the study of electronic transport in small semiconductor devices (1999) (120)
- Theoretical Study of Some Physical Aspects of Electronic Transport in nMOSFETs at the 10-nm Gate-Length (2007) (115)
- Analysis of quantum ballistic electron transport in ultrasmall silicon devices including space-charge and geometric effects (2004) (108)
- Theory of Electron Transport in Small Semiconductor Devices Using the Pauli Master Equation (1998) (105)
- Impact of field-induced quantum confinement in tunneling field-effect devices (2011) (103)
- The effect of gate metal and SiO2 thickness on the generation of donor states at the Si‐SiO2 interface (1985) (99)
- Direct measurement of the energy distribution of hot electrons in silicon dioxide (1985) (98)
- Electronic band structure calculations for biaxially strained Si, Ge, and III-V semiconductors (2010) (94)
- Simulation of Silicon Nanowire Transistors Using Boltzmann Transport Equation Under Relaxation Time Approximation (2008) (93)
- Mobility enhancement and temperature dependence in top-gated single-layer MoS2 (2013) (92)
- Ballistic electron transport in thin silicon dioxide films. (1987) (92)
- Charge trapping in high k gate dielectric stacks (2002) (92)
- Simulation of Electron Transport in High-Mobility MOSFETs: Density of States Bottleneck and Source Starvation (2007) (89)
- Monte Carlo solution to the problem of high-field electron heating in SiO2 (1984) (89)
- Effect of the electron-plasmon interaction on the electron mobility in silicon. (1991) (89)
- Figure of merit for and identification of sub-60 mV/decade devices (2013) (87)
- SiO2‐induced substrate current and its relation to positive charge in field‐effect transistors (1986) (86)
- Coulombic and neutral trapping centers in silicon dioxide. (1991) (75)
- A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon (1994) (72)
- Electron interference effects in quantum wells: Observation of bound and resonant states. (1987) (70)
- Imperfect two-dimensional topological insulator field-effect transistors (2017) (69)
- Monte Carlo study of electron transport in silicon inversion layers (1992) (68)
- Investigation of the SiO2‐induced substrate current in silicon field‐effect transistors (1985) (68)
- Monte Carlo study of sub-band-gap impact ionization in small silicon field-effect transistors (1995) (67)
- Slow and fast states induced by hot electrons at Si‐SiO2 interface (1982) (66)
- The impact of non-equilibrium transport on breakdown and transit time in bipolar transistors (1990) (65)
- Ballistic hot-electron transistors (1990) (65)
- Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model (2009) (64)
- Mermin-Wagner theorem, flexural modes, and degraded carrier mobility in two-dimensional crystals with broken horizontal mirror symmetry (2015) (64)
- Theory of interfacial plasmon-phonon scattering in supported graphene (2012) (61)
- Inversion channel mobility in high-/spl kappa/ high performance MOSFETs (2003) (61)
- Pseudopotential-based studies of electron transport in graphene and graphene nanoribbons (2013) (58)
- Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts (2001) (57)
- Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields: A rigorous approach (2011) (55)
- Theoretical studies of electronic transport in monolayer and bilayer phosphorene: A critical overview (2018) (54)
- Theoretical Study of Carrier Transport in Silicon Nanowire Transistors Based on the Multisubband Boltzmann Transport Equation (2008) (53)
- Ballistic FET modeling using QDAME: quantum device analysis by modal evaluation (2002) (52)
- Hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field-effect transistors (2003) (51)
- Advanced Physics of Electron Transport in Semiconductors and Nanostructures (2016) (48)
- Remote Coulomb scattering in metal–oxide–semiconductor field effect transistors: Screening by electrons in the gate (2003) (48)
- Monte Carlo Simulation of Electron Transport in Si: The First 20 Years (1996) (44)
- Theory and Calculation of the Deformation Potential Electron-Phonon Scattering Rates in Semiconductors (1991) (44)
- The importance of the anode field in controlling the generation rate of the donor states at the Si–SiO2 interface (1984) (42)
- Positive charge effects on the flatband voltage shift during avalanche injection on Al‐SiO2‐Si capacitors (1982) (42)
- Theoretical analysis of high-field transport in graphene on a substrate (2014) (41)
- Performance degradation of small silicon devices caused by long-range Coulomb interactions (2000) (40)
- Hot-electron-induced defects at the Si-SiO2 interface at high fields at 295 and 77 K (1985) (39)
- Quantum Monte Carlo simulation of high-field electron transport: An application to silicon dioxide. (1985) (38)
- Polarization analysis of hot-carrier light emission in silicon (1994) (38)
- Scaling MOSFETs to the Limit: A Physicists's Perspective (2003) (37)
- The physics of hot-electron degradation of Si MOSFET's: Can we understand it? (1989) (37)
- Vacuum emission of hot electrons from silicon dioxide at low temperatures (1988) (37)
- Direct observation of the threshold for electron heating in silicon dioxide. (1986) (36)
- Calculation of the electron mobility in III-V inversion layers with high-κ dielectrics (2010) (34)
- Electron heating studies in silicon dioxide: Low fields and thick films (1986) (33)
- Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers (2009) (33)
- Light emission during direct and Fowler-Nordheim tunneling in ultra thin MOS tunnel junctions (1997) (32)
- Microscopic dielectric permittivities of graphene nanoribbons and graphene (2016) (32)
- Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections (2010) (31)
- Structural, Electronic, and Transport Properties of Silicane Nanoribbons (2012) (30)
- The use of simulation in semiconductor technology development (1990) (30)
- Theoretical Study of the Gate Leakage Current in Sub-10-nm Field-Effect Transistors (2013) (30)
- Full-band-structure theory of high-field transport and impact ionization of electrons and holes in Ge, Si, and GaAs (1996) (29)
- Ab Initio Study of the Electronic Properties and Thermodynamic Stability of Supported and Functionalized Two-Dimensional Sn Films (2015) (29)
- Direct and heterodyne detection of microwaves in a metallic single wall carbon nanotube (2006) (28)
- Direct observation of ballistic electrons in silicon dioxide. (1986) (28)
- Complement-endothelial cell interactions: pathophysiological implications. (2000) (27)
- Hole mobility improvement in silicon-on-insulator and bulk silicon transistors using local strain (1997) (27)
- Charged impurity scattering in top-gated graphene nanostructures (2012) (26)
- Numerical Aspects and Implementation of theDamoclesMonte Carlo Device Simulation Program (1991) (25)
- Monte Carlo and hydrodynamic simulation of a one dimensional n+ - n - n+ silicon diode (1998) (22)
- Two-dimensional quantum mechanical modeling of band-to-band tunneling in indirect semiconductors (2011) (22)
- Theory of remote phonon scattering in top-gated single-layer graphene (2013) (22)
- Electron mobility in silicon and germanium inversion layers: The role of remote phonon scattering (2007) (22)
- Monte-Carlo study of electronic transport in non-σh-symmetric two-dimensional materials: Silicene and germanene (2018) (22)
- An empirical pseudopotential approach to surface and line-edge roughness scattering in nanostructures: Application to Si thin films and nanowires and to graphene nanoribbons (2011) (21)
- Theoretical Study of Ballistic Transport in Silicon Nanowire and Graphene Nanoribbon Field-Effect Transistors Using Empirical Pseudopotentials (2017) (21)
- Interfacial graphene growth in the Ni/SiO2 system using pulsed laser deposition (2013) (21)
- Thirty Years of Monte Carlo Simulations of Electronic Transport in Semiconductors: Their Relevance to Science and Mainstream VLSI Technology (2004) (21)
- Deformation potentials for band-to-band tunneling in silicon and germanium from first principles (2015) (21)
- Monte Carlo simulation of non-equilibrium transport in ultra-thin base Si bipolar transistors (1989) (19)
- Hot electrons in silicon dioxide: Ballistic to steady-state transport (1987) (19)
- Monte Carlo simulations of p- and n-channel dual-gate Si MOSFET's at the limits of scaling (1993) (19)
- Profile structures of ultrathin periodic and nonperiodic multilayer films containing a disubstituted diacetylene by high-resolution x-ray diffraction. (1988) (18)
- Temperature dependence of the current in SiO2 in the high field tunneling regime (1984) (17)
- Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-κ insulators (2010) (17)
- Hot electrons in SiO2: ballistic to steady-state transport (1988) (17)
- Numerical modeling of advanced semiconductor devices (1992) (17)
- Field induced quantum confinement in Indirect Semiconductors: Quantum mechanical and modified semiclassical model (2011) (17)
- Scaling MOSFETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source (2009) (16)
- Pseudopotential-based electron quantum transport: Theoretical formulation and application to nanometer-scale silicon nanowire transistors (2016) (16)
- Scalable atomistic simulations of quantum electron transport using empirical pseudopotentials (2019) (16)
- Monte Carlo simulation of hot-carrier transport in real semiconductor devices (1989) (16)
- Soft-x-ray-induced core-level photoemission as a probe of hot-electron dynamics in SiO2. (1990) (16)
- Signatures of dynamic screening in interfacial thermal transport of graphene (2013) (16)
- Limitations of ab initio methods to predict the electronic-transport properties of two-dimensional semiconductors: the computational example of 2H-phase transition metal dichalcogenides (2020) (16)
- Electronic Transport Properties of Silicane Determined from First Principles (2019) (16)
- Hot-carrier charge trapping and reliability in high-k dielectrics (2002) (15)
- Calculation of room temperature conductivity and mobility in tin-based topological insulator nanoribbons (2014) (15)
- Monte Carlo study of velocity overshoot in switching a 0.1-micron CMOS inverter (1997) (15)
- Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies (2001) (15)
- Differential conductance fluctuations in silicon nanowire transistors caused by quasiballistic transport and scattering induced intersubband transitions (2008) (14)
- Empirical pseudopotential calculations of the band structure and ballistic conductance of strained [001], [110], and [111] silicon nanowires (2011) (14)
- Semiclassical and Quantum Electronic Transport in Nanometer-Scale Structures: Empirical Pseudopotential Band Structure, Monte Carlo Simulations and Pauli Master Equation (2011) (14)
- The DAMOCLES Monte Carlo Device Simulation Program (1991) (13)
- Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETs (2012) (13)
- Top oxide thickness dependence of remote phonon and charged impurity scattering in top-gated graphene (2013) (13)
- Technology development & design for 22 nm InGaAs/InP-channel MOSFETs (2008) (12)
- Self-consistent calculation for valence subband structure and hole mobility in p-channel inversion layers (2008) (12)
- Full-band Monte Carlo simulation of high-energy transport and impact ionization of electrons and holes in Ge, Si, and GaAs (1996) (12)
- QDAME simulation of 7.5 nm double-gate Si nFETs with differing access geometries (2002) (12)
- Monte Carlo Study of Electronic Transport in Monolayer InSe (2019) (12)
- Master-Equation Study of Quantum Transport in Realistic Semiconductor Devices Including Electron-Phonon and Surface-Roughness Scattering (2020) (11)
- Electron Transport Properties of AlxGa1−xN/GaN Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations (2019) (11)
- “Hot electrons in Si lose energy mostly to optical phonons”: Truth or myth? (2019) (10)
- Asymmetry in the interior arachidic-acid bilayers within ultrathin multilayers fabricated via the Langmuir-Blodgett technique. (1988) (10)
- Electron avalanche injection on 10-nm dielectric films (1987) (10)
- Ballistic Electron Transport in Hot Electron Transistors (1990) (10)
- Remote Phonon Scattering in Si and Ge with SiO2 and HfO2 Insulators: Does the Electron Mobility Determine Short Channel Performance? (2007) (10)
- Comment on “Influence of the doping element on the electron mobility in n silicon” [J. Appl. Phys. 83, 3096 (1998)] (1999) (9)
- Erratum: Theory of interfacial plasmon-phonon scattering in supported grapheme (Physical Review B - Condensed Matter and Materials Physics (2012) 86 (165422)) (2012) (9)
- Understanding the Average Electron–Hole Pair-Creation Energy in Silicon and Germanium Based on Full-Band Monte Carlo Simulations (2019) (9)
- Issues in modeling small devices (1999) (9)
- Surface roughness scattering in ultrathin-body SOI MOSFETs (2007) (8)
- Coulombic and neutral electron trapping centers in SiO2 (1989) (8)
- Anatomy of Carrier Backscattering in Silicon Nanowire Transistors (2009) (8)
- Inter-ribbon tunneling in graphene: An atomistic Bardeen approach (2015) (8)
- Theoretical simulation of negative differential transconductance in lateral quantum well nMOS devices (2017) (7)
- Study of performance and leakage currents in nanometer-scale bulk, SOI and double-gate MOSFETs (2008) (7)
- Determining bound states in a semiconductor device with contacts using a nonlinear eigenvalue solver (2014) (7)
- Calculation of Hole Mobility in Ge and III-V p-Channels (2009) (7)
- Theoretical study of electron transport in silicene and germanene using full-band Monte Carlo simulations (2016) (6)
- Intrinsic broadening of the mobility spectrum of bulk n-type GaAs (2014) (6)
- Energies of the X- and L-valleys in In0.53Ga0.47As from electronic structure calculations (2016) (6)
- Band-Structure and Quantum Effects on Hole Transport in p-MOSFETs (2005) (6)
- Si-based tunnel field-effect transistors for low-power nano-electronics (2011) (6)
- Realizing a topological-insulator field-effect transistor using iodostannanane (2014) (6)
- Limitations of ab initio methods to predict the electronic-transport properties of two-dimensional materials: The computational example of 2H-phase transition metal dichalcogenides (2019) (5)
- (Invited) Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source (2010) (5)
- Monte Carlo calculations of laser-induced free-electron heating in SiO2 (1991) (5)
- Depression of the normal-superfluid transition temperature in gated bilayer graphene (2014) (5)
- Technology development & design for 22 nm InGaAs/InP-channel MOSFETs (2008) (4)
- Monte Carlo Simulation of High-Energy Electron Transport in Silicon: Is There a Short-Cut to Happiness? (1996) (4)
- Monte Carlo analysis of phosphorene nanotransistors (2020) (4)
- Simulation of quantum electronic transport in small devices: a master equation approach (2003) (4)
- Hot Electrons in SiO2: Ballistic and Steady-State Transport (1988) (4)
- Quantum transport simulation of graphene-nanoribbon field-effect transistors with defects (2020) (4)
- Physics of electronic transport in two-dimensional materials for future FETs (2016) (4)
- Long-range coulomb interactions in small silicon devices: Transconductance and mobility degradation (2000) (3)
- Does Circulation in Individual Current States Survive in the Total Current Density? (2003) (3)
- Electronic and transport properties of armchair and zigzag sp3-hybridized silicane nanoribbons (2012) (3)
- Neutron Interference in the Gravitational Field of a Ring Laser (2013) (3)
- Microwave detection and mixing in metallic single wall carbon nanotubes and potential for a new terahertz detector (2006) (3)
- Physical characterization of deep bulk levels by the MOS conductance technique (1982) (3)
- Erratum: "Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-κ insulator: The role of remote phonon scattering" (J. Appl. Phys. 90, 4587 (2001)) (2002) (3)
- Theoretical study of scattering in graphene ribbons in the presence of structural and atomistic edge roughness (2018) (3)
- Channel Length Scaling Limit for LDMOS Field-Effect Transistors: Semi-classical and Quantum Analysis (2020) (3)
- Scattering with Ionized Impurities (2016) (3)
- Full-band ballistic quantum transport in nanostructures using empirical pseudopotentials (2014) (3)
- * Electronic Structure of Low-Dimensionality Systems (2016) (2)
- Effects of the Dielectric Environment on Electronic Transport in Monolayer MoS2: Screening and Remote Phonon Scattering (2020) (2)
- Post-Si-CMOS Devices - Scaling FETs to (Beyond?) 10 nm: From Semiclassical to Quantum Models (2012) (2)
- 3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs (2021) (2)
- OVERSHOOT IN TR ANSIENr ANI) STEADY-STATE IN GaAs, InP, Ga,t,In.53As, AND InAs BIPOLAR TRANSISrORS (1990) (2)
- Empirical Pseudopotential Calculation of Band Structure and Deformation Potentials of Biaxially Strained Semiconductors (2009) (2)
- Modeling of inter-ribbon tunneling in graphene (2015) (2)
- HIGH FIELD ELECTRON TRANSPORT IN SiO//2 AND GENERATION OF POSITIVE CHARGE AT THE Si-SiO//2 INTERFACE. (1986) (2)
- Hole transport in p-channel Si MOSFETs (2005) (2)
- Calculation of electron-phonon interaction strength from first principles in graphene and silicon (2014) (2)
- Dissipative Quantum Transport using the Pauli Master Equation (2009) (2)
- Self-consistent full band two-dimensional Monte Carlo two-dimensional Poisson device solver for modeling SiGe p-channel devices (2006) (2)
- Dielectric Properties of Semiconductors (2016) (2)
- Real-time ab initio simulation of inelastic electron scattering using the exact, density functional, and alternative approaches. (2020) (2)
- Contacts to Two-dimensional Materials: Image Forces, Dielectric Environment, and Back-gate (2022) (2)
- Superconductivity induced by flexural modes in non $\sigma_{\rm h}$-symmetric Dirac-like two-dimensional materials: A theoretical study for silicene and germanene (2018) (2)
- Modeling Contact Resistivity in Monolayer Molybdenum disulfide Edge contacts (2021) (1)
- Reduction of the normal-superfluid transition temperature in gated bilayer graphene (2014) (1)
- Erratum: “Theory of electron transport in small semiconductor devices using the Pauli master equation” [J. Appl. Phys. 83, 270 (1998)] (1998) (1)
- Hot-electron Transistors (1)
- First-principles Study of the Electron and Hole Mobility in Silicane (2019) (1)
- Comments on "Oxide-field dependence of electron injection from silicon into silicon dioxide" [with reply] (1994) (1)
- Hot Electron Transport in Silicon Dioxide (1988) (1)
- Modeling p-channel SiGe MOSFETs by taking into account the band-structure and the size quantization effects self-consistently (2007) (1)
- Progress on quantum transport simulation using empirical pseudopotentials (2015) (1)
- Overview of Quantum-Transport Formalisms (2016) (1)
- Backscattering coefficient in MOSFETs from an extended one-flux theory (2009) (1)
- Modeling topological-insulator field-effect transistors using the Boltzmann equation (2016) (1)
- Model-comparison study of quasi-ballistic electron transport in nanoscale semiconductor devices (2010) (1)
- Image-force barrier lowering in top- and side-contacted two-dimensional materials (2022) (1)
- Electron Transport Properties of Al_{x}Ga_{1−x}N/GaN Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations (2019) (1)
- Simulation of Quantum Current in Double Gate MOSFETs: Vortices in Electron Transport (2018) (1)
- Monte carlo simulations of p- and n-channel dual-gate Si MOSFETs at the limits of scaling (1993) (1)
- One-flux theory of saturated drain current in nanoscale transistors (2011) (1)
- Accelerated modeling of electron transport using Bloch waves (2018) (1)
- First Self-Consistent Full-Band - 2D Monte Carlo - 2D Poisson Device Solver for Modeling SiGe p-Channel Devices (2006) (1)
- Transistors performance in the sub-1 nm technology node based on one-dimensional nanomaterials (2015) (1)
- Efficient Modeling of Electron Transport with Plane Waves (2018) (1)
- Comment on “Unified compact theory of tunneling gate current in metal–oxide–semiconductor structures: Quantum and image force barrier lowering” [J. Appl. Phys. 92, 3724 (2002)] (2003) (1)
- Physics of electronic transport in low-dimensionality materials for future FETs (2015) (1)
- SEMICONDUCTOR DEVICE PHYSICS AND THE MODELING OF SMALL SEMICONDUCTOR DEVICES (1997) (1)
- Surface Plasmon Emission as a Probe of Hot-Electron Dynamics (1985) (1)
- Modelling of Flat-Band Voltage Shift During Avalanche Injection on MOS Capacitors (1981) (1)
- Elementary Excitations in Solids (2016) (0)
- Physics of electronic transport in low-dimensionality materials for future FETs (2014) (0)
- A Field-effect Transistor based on Two-dimensional Topological Insulators (2015) (0)
- Hole Transport Simulations in p-channel Si MOSFETs (2005) (0)
- Limitations of ab initio methods to predict the electronic-transport properties of two-dimensional semiconductors: the computational example of 2H-phase transition metal dichalcogenides (2020) (0)
- Full band quantum transport using mixed supercell and envelop function method (2014) (0)
- Electronic Transport in `Unconventional' SOI MOS Systems: Thin-Body and High-k Effects in Si, Ge, and III-V Layers (2007) (0)
- Stannanane as a Topoligcal Insulator: a Study of Conducitivity and Mobility (2014) (0)
- Solution Methods for Semiclassical Transport (2016) (0)
- Graphene growth using Pulsed Laser Deposition (2013) (0)
- Generalities About Scattering in Semiconductors (2016) (0)
- (Invited) Ab Initio Study of Carrier Transport in Low-Dimensionality Materials (2017) (0)
- The Electronic Structure of Crystals: Computational Methods (2016) (0)
- First-principles Monte Carlo simulation of electron transport in Al x Ga 1-x N/GaN high-electron-mobility transistors (2018) (0)
- Canonical Quantization of Physical Systems (2016) (0)
- The Periodic Table, Molecules, and Bonds (2016) (0)
- The foundations of Shockley's equation for the average electron–hole-pair creation energy in semiconductors (2022) (0)
- Response to "Comment on `Theoretical analysis of high-field transport in graphene on a substrate'" [J. Appl. Phys. 116, 236101 (2014)] (2014) (0)
- *From Liouville—von Neumann to Boltzmann: The Semiclassical Limit (2016) (0)
- Erratum: “Energies of the X- and L-valleys in In0.53Ga0.47As from electronic structure calculations” [J. Appl. Phys. 119, 055707 (2016)] (2016) (0)
- Quantum Mechanical Study of Impact of Surface Roughness on Electron Transport in Ultra- Thin Body Silicon FETs (2018) (0)
- Empirical Pseudopotential Approach to Semiclassical and Quantum Electronic Transport in Nanometer-scale Structures (2011) (0)
- Elements of Quantum Statistical Mechanics (2016) (0)
- Three-dimensional plane-wave full-band quantum transport using empirical pseudopotentials (2015) (0)
- Investigating the use of HSE Hybrid Functionals to Improve Electron Transport Calculations in Si, Ge, Diamond, and SiC (2021) (0)
- Electron Transport in Engineered Substrates: Strain and Orientation Effects (2006) (0)
- Electron–Phonon Interactions (2020) (0)
- Modeling of Phonon-assisted Zener Tunneling in Indirect Semiconductors (2011) (0)
- Monte Carlo analysis of phosphorene nanotransistors (2021) (0)
- Modeling of SiGe Devices Using a Self-Consistent Full-Band Device Simulator Which Properly Takes into Account Quantum-Mechanical Size Quantization and Mobility Enhancement (2006) (0)
- Theoretical Study of Electronic Transport in Two-Dimensional Materials (2021) (0)
- Delta-doped HfO2/In0.53Ga0.47As inversion layers: Density-of-states bottleneck and electron mobility (2010) (0)
- Reduction of the electron mobility in high-κ MOS systems caused by remote scattering with soft interfacial optical phonons (2003) (0)
- Effective Action and Cosmological Particle Production. (1978) (0)
- (Invited) Pseudopotential-Based Study of Electron Transport in Low-Dimensionality Nanostructures (2013) (0)
- Monte Carlo Simulation of Small Silicon Field-Effect Transistors (1993) (0)
- Friedman ( ECE ) Session I : Spintronic and 2-D Materials and Devices (2017) (0)
- Session 36: Modeling and simulation enhanced mobility and III-V devices (2008) (0)
- Two-dimensional topological insulators enable the fabrication of field-effect transistors with imperfect materials (2017) (0)
- Coulomb Interactions Among Free Carriers (2016) (0)
- Electron pairing by remote-phonon scattering in oxide-supported graphene (2019) (0)
- Full Band Monte Carlo Simulation of Small MOSFETs (1999) (0)
- Theoretical study of electronic transport in monolayer SnSe (2020) (0)
- Radiative Processes: The Dipole Approximation (2016) (0)
- Simulation of hole transport in p-channel Si MOSFETs (2005) (0)
- Simulation ofElectron Transport inHigh-Mobility MOSFETs: DensityofStatesBottleneck andSourceStarvation (2007) (0)
- Band structure and ballistic conductance of strained Si nanowires (2010) (0)
- Density Functional Theory (2016) (0)
- IBM Research Report Remote Coulomb Scattering in Metal-Oxide-Semiconductor Field-Effect Transisitors: Screening by Electrons in the Gate (2003) (0)
- Electron Transport Variability in Armchair Graphene Nanorribbons (2013) (0)
- Simulation of Quantum Transport in Small Semiconductor Devices (2005) (0)
- Electron Transport in Engineered Substrates: Strain, Orientation, and Channel/Insulator Material Effects (2006) (0)
- Reduction of short channel effects in self-aligned AlInAs/GaInAs HEMTs by lateral bandgap engineering for high f/sub max/ (1997) (0)
- Reduction of the Electron Mobility in High-k MOS Systems caused by Remote Scattering with Interfacial Optical Phonons (2003) (0)
- Single-Electron Dynamics in Crystals (2016) (0)
- Crystals: Lattice, Reciprocal Lattice, and Symmetry (2016) (0)
- HOT ELECTRONS INDUCED DEFECTS AT THE Si/SiO//2 INTERFACE. (1981) (0)
- The Electronic Structure of Crystals: Theoretical Framework (2016) (0)
- 4 Generalization to Systems with Open Boundaries (0)
- Theoretical Study of Electronic Transport in Two-Dimensional Transition Metal Dichalcogenides: Effects of the Dielectric Environment (2022) (0)
- A master equation approach to the simulation of electron transport in small semiconductor devices (1998) (0)
- Modeling of electron transport in nanoribbon devices using Bloch waves (2018) (0)
- Determining bound states in a semiconductor device with contacts using a nonlinear eigenvalue solver (2014) (0)
- Effect of interfacial phonon-plasmon modes on electrical transport in supported graphene (2012) (0)
- Electron transport and heating in silicon dioxide films (1987) (0)
- Open boundary-conditions using empirical pseudopotentials in quantum transport (2011) (0)
- Monte-Carlo Simulations of Performance Scaling in Strained-Si nMOSFETs (2005) (0)
- Theoretical Study of Carrier Transport in Supported and Gated Two-dimensional Transition Metal Dichalcogenides (2022) (0)
- Monte Carlo simulations of carrier flow in novel gate materials (2008) (0)
- The importance of the image forces and dielectric environment in modeling contacts to two-dimensional materials (2023) (0)
- Examining Performance Enhancement of p-Channel Strained-SiGe MOSFET Devices (2006) (0)
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What Schools Are Affiliated With Massimo V. Fischetti?
Massimo V. Fischetti is affiliated with the following schools:
