Michael Kneissl
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German physicist
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Physics
Michael Kneissl's Degrees
- Bachelors Physics Technical University of Munich
- Masters Physics Technical University of Munich
- PhD Physics Technical University of Munich
Why Is Michael Kneissl Influential?
(Suggest an Edit or Addition)According to Wikipedia, Michael Kneissl is a German physicist and professor at the Institute of Solid State Physics at the Technical University of Berlin. Kneissl received his doctoral degree in physics from the University of Erlangen–Nuremberg in 1996. During his graduate studies, he was also a visiting scholar at the University of California, Berkeley, in 1993. He joined the Xerox Palo Alto Research Center in 1996. Since 2005, he has been a Full Professor and the Chair of Experimental Nanophysics and Photonics Group at the TU Berlin. He holds a joint appointment at the Ferdinand-Braun-Institut in Berlin, where he heads the GaN-Optoelectronics Lab. From 2011 to 2021 he was Executive Director of the Institute of Solid State Physics at TU Berlin.
Michael Kneissl's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Advances in group III-nitride-based deep UV light-emitting diode technology (2010) (608)
- The emergence and prospects of deep-ultraviolet light-emitting diode technologies (2019) (538)
- Application of GaN-based ultraviolet-C light emitting diodes--UV LEDs--for water disinfection. (2011) (373)
- Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off (1999) (325)
- III-Nitride Ultraviolet Emitters: Technology and Applications (2015) (250)
- Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars (2003) (238)
- InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off (2000) (171)
- The 2020 UV emitter roadmap (2020) (160)
- AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire (2018) (149)
- Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells (2012) (142)
- Ultraviolet semiconductor laser diodes on bulk AlN (2007) (142)
- Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes (2010) (140)
- Metastability of Oxygen Donors in AlGaN (1998) (139)
- Current-injection spiral-shaped microcavity disk laser diodes with unidirectional emission (2004) (129)
- Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells (2012) (125)
- Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy (2002) (117)
- Nitride emitters go nonpolar (2007) (107)
- The critical thickness of InGaN on (0 0 0 1)GaN (2008) (104)
- Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes (2014) (101)
- Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates (2014) (100)
- High quality AlGaN grown on ELO AlN/sapphire templates (2013) (93)
- Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching (1998) (86)
- Highly conductive n-AlxGa1−xN layers with aluminum mole fractions above 80% (2013) (86)
- Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates (2014) (81)
- High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching (2011) (80)
- Effect of the AIN nucleation layer growth on AlN material quality (2008) (78)
- Effect of the AIN nucleation layer growth on AlN material quality (2008) (78)
- Near-bandedge cathodoluminescence of an AlN homoepitaxial film (2004) (73)
- A Brief Review of III-Nitride UV Emitter Technologies and Their Applications (2016) (73)
- Optically pumped UV lasers grown on bulk AlN substrates (2012) (72)
- Influence of microstructure on the carrier concentration of Mg-doped GaN films (2001) (72)
- Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes (2015) (72)
- Determination of the piezoelectric field in InGaN quantum wells (2005) (71)
- Ultraviolet AlGaN multiple-quantum-well laser diodes (2003) (68)
- Effective Thermal Management in Ultraviolet Light-Emitting Diodes With Micro-LED Arrays (2013) (64)
- Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes (2003) (63)
- Laser gain properties of AlGaN quantum wells (2005) (62)
- Growth of AlGaN and AlN on patterned AlN/sapphire templates (2011) (62)
- Structural and optical properties of nonpolar GaN thin films (2008) (61)
- Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector (2010) (61)
- Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates (2000) (58)
- High-power UV-B LEDs with long lifetime (2015) (54)
- Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes (2008) (54)
- Continuous-wave InGaN multiple-quantum-well laser diodes on copper substrates (2001) (54)
- Modulated Epitaxial Lateral Overgrowth of AlN for Efficient UV LEDs (2012) (53)
- Vertical injection thin-film AlGaN∕AlGaN multiple-quantum-well deep ultraviolet light-emitting diodes (2006) (53)
- Defect-Related Degradation of AlGaN-Based UV-B LEDs (2017) (51)
- High-temperature growth of AlN in a production scale 11 × 2' MOVPE reactor (2008) (50)
- Semipolar GaN grown on m-plane sapphire using MOVPE (2008) (50)
- Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells (2011) (49)
- Auger recombination in AlGaN quantum wells for UV light-emitting diodes (2018) (47)
- Improved injection efficiency in 290 nm light emitting diodes with Al(Ga)N electron blocking heterostructure (2013) (47)
- Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature (2015) (46)
- Room-temperature pulsed operation of an electrically injected InGaN/GaN multi-quantum well distributed feedback laser (1998) (46)
- Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes (2016) (46)
- Degradation effects of the active region in UV-C light-emitting diodes (2018) (45)
- Surface diffusion and layer morphology of ((112¯2)) GaN grown by metal-organic vapor phase epitaxy (2012) (45)
- Ultraviolet InAlGaN Light Emitting Diodes Grown on Hydride Vapor Phase Epitaxy AlGaN/Sapphire Templates (2006) (42)
- Shock-induced band-gap shift in GaN: Anisotropy of the deformation potentials (2005) (40)
- Electrical properties and microstructure of vanadium-based contacts on ICP plasma etched n-type AlGaN:Si and GaN:Si surfaces (2013) (40)
- MOVPE growth of semipolar (112¯2) AlN on m-plane (101¯0) sapphire (2012) (40)
- Orientation control of GaN {1 1 2̄ 2} and {1 0 1̄ 3̄} grown on (1 0 1̄ 0) sapphire by metal-organic vapor phase epitaxy (2010) (39)
- Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures (1999) (39)
- Metamorphic Al 0.5 Ga 0.5 N:Si on AlN/sapphire for the growth of UVB LEDs (2017) (38)
- Crystal orientation of GaN layers on (1010) m‐plane sapphire (2011) (38)
- Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure (1999) (37)
- Electronic properties of Si-doped AlxGa1-xN with aluminum mole fractions above 80% (2016) (37)
- Above band gap absorption spectra of the arsenic antisite defect in low temperature grown GaAs and AlGaAs (1996) (37)
- Gas Sensing of Nitrogen Oxide Utilizing Spectrally Pure Deep UV LEDs (2017) (37)
- (Al,Ga)N overgrowth over AlN ridges oriented in [1120] and [1100] direction (2011) (37)
- Structural and optical properties of semipolar (112¯2) AlGaN grown on (101¯0) sapphire by metal–organic vapor phase epitaxy (2013) (36)
- Controlled coalescence of MOVPE grown AlN during lateral overgrowth (2013) (36)
- Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction (2013) (36)
- Controlling the morphology transition between step-flow growth and step-bunching growth (2017) (36)
- Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates (2000) (36)
- Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes (2011) (35)
- A-plane GaN epitaxial lateral overgrowth structures: Growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy (2008) (35)
- Correlation of sapphire off‐cut and reduction of defect density in MOVPE grown AlN (2016) (34)
- Internal efficiency of InGaN light-emitting diodes: Beyond a quasiequilibrium model (2010) (34)
- The effects of magnesium doping on the modal loss in AlGaN-based deep UV lasers (2017) (33)
- Surface morphology of homoepitaxial GaN grown on non‐ and semipolar GaN substrates (2011) (33)
- Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes (2015) (33)
- Dry-etching and characterization of mirrors on III-nitride laser diodes from chemically assisted ion beam etching (1998) (33)
- Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes (2015) (33)
- Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes (2019) (32)
- Two-section InGaN multiple-quantum-well laser diode with integrated electroabsorption modulator (2002) (32)
- On the optical polarization properties of semipolar InGaN quantum wells (2011) (32)
- MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs (2019) (31)
- Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs (2017) (31)
- Polarity determination of polar and semipolar (112¯2) InN and GaN layers by valence band photoemission spectroscopy (2013) (31)
- Temperature and excitation power dependent photoluminescence intensity of GaInN quantum wells with varying charge carrier wave function overlap (2010) (30)
- Influence of light absorption on the performance characteristics of UV LEDs with emission between 239 and 217 nm (2019) (30)
- Influence of quantum-well-barrier composition on gain and threshold current in AlGaN lasers (2007) (29)
- Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire (2020) (29)
- DFB Laser Diodes Based on GaN Using 10th Order Laterally Coupled Surface Gratings (2018) (29)
- Degradation of (In)AlGaN-Based UVB LEDs and Migration of Hydrogen (2019) (29)
- Displacement Talbot lithography for nano-engineering of III-nitride materials (2019) (29)
- Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy (2012) (28)
- Dominance of radiative recombination from electron-beam-pumped deep-UV AlGaN multi-quantum-well heterostructures (2016) (28)
- High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor (2011) (27)
- Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate (2011) (27)
- Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates (2020) (26)
- Growth and characterizations of semipolar (112¯2) InN (2012) (26)
- Polarization-insensitive high-contrast GaAs/AlGaAs waveguide modulator based on the Franz-Keldysh effect (1993) (26)
- (In)AlGaN deep ultraviolet light emitting diodes with optimized quantum well width (2010) (25)
- Laser Scribing for Facet Fabrication of InGaN MQW Diode Lasers on Sapphire Substrates (2010) (24)
- AlGaN layer structures for deep UV emitters on laterally overgrown AlN/sapphire templates (2013) (24)
- Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm (2019) (24)
- Investigation of inversion domain formation in AlN grown on sapphire by MOVPE (2012) (23)
- Analysis of wavelength-dependent performance variations of GaN-based ultraviolet lasers (2007) (23)
- Impact of electron irradiation on electron holographic potentiometry (2014) (23)
- Growth mode of InGaN on GaN (0001) in MOVPE (2009) (23)
- Efficient carrier‐injection and electron‐confinement in UV‐B light‐emitting diodes (2016) (22)
- InGaN–GaN Disk Laser for Blue-Violet Emission Wavelengths (2010) (22)
- Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N (2015) (22)
- Indium incorporation efficiency and critical layer thickness of (202¯1) InGaN layers on GaN (2012) (21)
- Facet formation for laser diodes on nonpolar and semipolar GaN (2010) (21)
- Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes (1998) (21)
- Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities (2020) (21)
- Localization of current-induced degradation effects in (InAlGa)N-based UV-B LEDs (2018) (21)
- Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting Diodes (2020) (21)
- Ultraviolet InAlGaN multiple‐quantum‐well laser diodes (2003) (20)
- Hetero‐nipi band filling modulator with laterally interdigital contacts made by shadow mask molecular beam epitaxy regrowth (1993) (20)
- Impact of inhomogeneous broadening on optical polarization of high-inclination semipolar and nonpolar In x Ga 1 -x N /GaN quantum wells (2016) (20)
- UV-C Lasing From AlGaN Multiple Quantum Wells on Different Types of AlN/Sapphire Templates (2015) (20)
- Novel shadow mask molecular beam epitaxial regrowth technique for selective doping (1993) (20)
- Polarization of eigenmodes in laser diode waveguides on semipolar and nonpolar GaN (2010) (19)
- Polarization dependence of the electroabsorption in low‐temperature grown GaAs for above band‐gap energies (1996) (19)
- Investigation of the temperature dependent efficiency droop in UV LEDs (2013) (19)
- Effect of the GaN:Mg Contact Layer on the Light‐Output and Current‐Voltage Characteristic of UVB LEDs (2018) (19)
- Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers (2020) (18)
- Growth mode transition and relaxation of thin InGaN layers on GaN (0001) (2013) (18)
- Excitonic recombination in epitaxial lateral overgrown AlN on sapphire (2013) (18)
- Annealing induced refractive index and absorption changes of low‐temperature grown GaAs (1994) (18)
- Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes (2017) (18)
- V-pit to truncated pyramid transition in AlGaN-based heterostructures (2015) (18)
- The Integration of InxGa1-xN Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off (2000) (18)
- Analysis of crystal orientation in AlN layers grown on m-plane sapphire (2014) (17)
- Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs (2021) (17)
- MOVPE growth for UV-LEDs (2009) (17)
- Optical characterization of low temperature grown GaAs by transmission measurements above the band gap (1996) (16)
- High contrast electro‐optic n‐i‐p‐i doping superlattice modulator (1993) (16)
- Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire (2015) (16)
- Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors (2014) (16)
- Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High‐Temperature Annealing for UVC Light‐Emitting Diodes (2020) (16)
- Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy (2017) (16)
- Low power (bistable) opto‐electrical threshold switches with high gain based on n‐i‐p‐i doping superlattices (1993) (16)
- Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering (2008) (16)
- Volmer-Weber growth mode of InN quantum dots on GaN by MOVPE (2009) (15)
- MOVPE growth of semipolar (112¯2) Al1−xInxN across the alloy composition range (0≤x≤0.55) (2015) (15)
- Near band edge and defect emissions from epitaxial lateral overgrown a-plane GaN with different stripe orientations (2008) (15)
- Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy (2011) (15)
- Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy (2011) (14)
- Influence of waveguide strain and surface morphology on AlGaN-based deep UV laser characteristics (2018) (14)
- Single phase {112¯2} GaN on (101¯0) sapphire grown by metal-organic vapor phase epitaxy (2011) (14)
- Degradation behavior of AlGaN-based 233 nm deep-ultraviolet light emitting diodes (2018) (14)
- Electroabsorption spectroscopy: Direct determination of the strong piezoelectric field in InGaN/GaN heterostructure diodes (2001) (14)
- Growth of semipolar (10$ \bar 1\bar 3 $) InN on m ‐plane sapphire using MOVPE (2010) (14)
- High-Q-preserving coupling between a spiral and a semicircle μ-cavity (2007) (14)
- Influence of barrier growth schemes on the structural properties and thresholds of InGaN quantum well laser diodes (2014) (14)
- Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate (2017) (14)
- Optically Pumped DFB Lasers Based on GaN Using 10th-Order Laterally Coupled Surface Gratings (2017) (14)
- High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes (2019) (13)
- Continuous-wave operation of InGaN multiple quantum well laser diodes on copper substrates obtained by laser lift-off (2000) (13)
- A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser (2020) (13)
- Spatial inhomogeneities in AlxGa1−xN quantum wells induced by the surface morphology of AlN/sapphire templates (2015) (13)
- Reverse biased photoconductive detectors and switches with separate absorption and detection area (1995) (13)
- Stripe-width dependence of threshold current for gain-guided AlGaInN laser diodes (1999) (13)
- Indium nitride quantum dot growth modes in metalorganic vapour phase epitaxy (2008) (12)
- Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures. (1999) (12)
- Ripening of InAs quantum dots on GaAs (0 0 1) investigated with in situ scanning tunneling microscopy in metal–organic vapor phase epitaxy (2008) (12)
- GaN‐based ultraviolet light‐emitting diodes with multifinger contacts (2010) (12)
- Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers (2014) (12)
- Electrochemical etching of AlGaN for the realization of thin-film devices (2019) (12)
- Electrical properties of (11-22) Si:AlGaN layers at high Al contents grown by metal-organic vapor phase epitaxy (2020) (12)
- Bistable opto‐optical switches with high optical gain based on n‐i‐p‐i doping superlattices (1993) (12)
- Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wells (2016) (12)
- Growth and characterization of stacking fault reduced GaN on sapphire (2013) (11)
- Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes (2016) (11)
- Highly Reflective p-Contacts Made of Pd-Al on Deep Ultraviolet Light-Emitting Diodes (2017) (11)
- The Franz–Keldysh effect in shocked GaN:Mg (2003) (11)
- Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs (2021) (11)
- Surface reconstructions of (0001) AlN during metal‐organic vapor phase epitaxy (2017) (11)
- Dynamical switching behavior of n‐i‐p‐i modulator structures (1996) (11)
- Surface properties of AlInGaN/GaN heterostructure (2016) (11)
- Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements (2016) (10)
- Effect of ridge waveguide etch depth on laser threshold of InGaN MQW laser diodes (2012) (10)
- Desorption induced GaN quantum dots on (0001) AlN by MOVPE (2015) (10)
- Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes (2007) (10)
- Determination of Sapphire Off‐Cut and Its Influence on the Morphology and Local Defect Distribution in Epitaxially Laterally Overgrown AlN for Optically Pumped UVC Lasers (2019) (10)
- Well width study of InGaN multiple quantum wells for blue–green emitter (2010) (10)
- AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy (2020) (10)
- MOVPE Growth of Smooth and Homogeneous Al0.8Ga0.2N:Si Superlattices as UVC Laser Cladding Layers (2018) (9)
- Non-polar and semipolar nitride semiconductors (2012) (9)
- Design and performance of asymmetric waveguide nitride laser diodes (2000) (9)
- Temperature induced degradation of InAlGaN multiple-quantum well UV-B LEDs (2015) (9)
- Gain characteristic of continuous-wave InGaN multiple quantum well laser diodes during life testing (2000) (9)
- Vertical conductivity and Poole–Frenkel-ionization of Mg acceptors in AlGaN short-period superlattices with high Al mole fraction (2020) (9)
- Ohmic Contacts on N-Face n-Type GaN After Low Temperature Annealing (2013) (9)
- Strong charge carrier localization interacting with extensive nonradiative recombination in heteroepitaxially grown m-plane GaInN quantum wells (2011) (9)
- Demonstration of an InGaN/GaN-based optically pumped multiquantum well distributed feedback laser using holographically defined third-order gratings (1998) (9)
- High speed and high contrast electro-optical modulators based on n-i-p-i doping superlattices (1993) (9)
- Effect of quantum barrier composition on electro-optical properties of AlGaN-based UVC light emitting diodes (2019) (9)
- Correlation of sapphire off‐cut and reduction of defect density in MOVPE grown AlN [Phys. Status Solidi B 253, 809–813 (2016)] (2016) (9)
- Application of 233 nm far-UVC LEDs for eradication of MRSA and MSSA and risk assessment on skin models (2022) (9)
- Carrier injection in InAlGaN single and multi‐quantum‐well ultraviolet light emitting diodes (2010) (9)
- Polarization dependent study of gain anisotropy in semipolar InGaN lasers (2011) (9)
- Effect of Cl2 plasma treatment and annealing on vanadium based metal contacts to Si-doped Al0.75Ga0.25N (2017) (9)
- Emission characteristics of InGaN multi quantum well light emitting diodes with differently strained InAlGaN barriers (2009) (9)
- Band gap changes of GaN shocked to 13 GPa (2002) (8)
- Depth-resolved cathodoluminescence of a homoepitaxial AlN thin film (2005) (8)
- Impact of acceptor concentration on the resistivity of Ni/Au p‐contacts on semipolar (20–21) GaN:Mg (2016) (8)
- Structure investigations of nonpolar GaN layers (2010) (8)
- Polarization of photoluminescence emission from semi-polar (11–22) AlGaN layers (2014) (8)
- Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films (2019) (8)
- Wavelength and intensity switching in directly coupled semiconductor microdisk lasers. (2008) (8)
- Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al,In)GaN laser diodes (2014) (8)
- Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal–Organic Vapour Phase Epitaxy (2011) (8)
- Mobility-limiting mechanisms in polar semiconductor heterostructures (2012) (8)
- Influence of substrate off-cut angle on the performance of 310 nm light emitting diodes (2019) (8)
- Optical and electro-optical investigation of low-temperature grown GaAs (1997) (7)
- In‐situ observation of InGaN quantum well decomposition during growth of laser diodes (2015) (7)
- DX CENTERS IN AlGaN (1999) (7)
- Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001) (2013) (7)
- Influence of Carrier Lifetime, Transit Time, and Operation Voltages on the Photoresponse of Visible-Blind AlGaN Metal–Semiconductor–Metal Photodetectors (2013) (7)
- Thin-film flip-chip UVB LEDs realized by electrochemical etching (2020) (7)
- Electrical compensation and cation vacancies in Al rich Si-doped AlGaN (2020) (7)
- AlGaN-based ultraviolet lasers — Applications and materials challenges (2011) (7)
- Progress in the Preparation of Aluminum Nitride Substrates from Bulk Crystals (2002) (7)
- Enhanced Wall Plug Efficiency of AlGaN-Based Deep-UV LEDs Using Mo/Al as p-Contact (2020) (7)
- Optical Nonlinearities in n–i–p–i and Hetero‐n–i–p–i Structures (1992) (7)
- N-i-p-i-based high-speed detectors and bistable switches with gain (1992) (7)
- Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes (2008) (7)
- Design considerations for AlGaN-based UV LEDs emitting near 235 nm with uniform emission pattern (2017) (7)
- Preparation and atomic structure of reconstructed (0001) InGaN surfaces (2012) (7)
- Low-threshold InAlGaAs vertical-cavity surface-emitting laser arrays using transparent contacts (1998) (7)
- Realization of a complex-coupled InGaN/GaN-based optically pumped multiple-quantum-well distributed-feedback laser (2000) (7)
- Index antiguiding in narrow ridge-waveguide (In,Al)GaN-based laser diodes (2013) (7)
- CW InGaN Multiple‐Quantum‐Well Laser Diodes on Copper Substrates (2001) (6)
- GaInN quantum well design and measurement conditions affecting the emission energy S‐shape (2011) (6)
- On optical polarization and charge carrier statistics of nonpolar InGaN quantum wells (2016) (6)
- On the formation of cleaved mirror facets of GaN-based laser diodes—A comparative study of diamond-tip edge-scribing and laser scribing (2016) (6)
- Epitaxial lateral overgrowth on (2 1̄ 1̄ 0) a-plane GaN with [0 1̄ 1 1]-oriented stripes (2009) (6)
- Calculation of optical gain in AlGaN quantum wells for ultraviolet emission (2020) (6)
- Enhanced absorption modulation in hetero n‐i‐p‐i structures by constructive superposition of field effect and phase space filling (1994) (6)
- Structural and optical properties of epitaxially overgrown third-order gratings for InGaN/GaN-based distributed feedback lasers (1998) (6)
- Spacer and well pumping of InGaN vertical cavity semiconductor lasers with varying number of quantum wells (2012) (6)
- Improved light extraction and quantum efficiencies for UVB LEDs with UV-transparent p-AlGaN superlattices (Conference Presentation) (2017) (6)
- Two-dimensional Franz-Keldysh effect in MQW structures with lateral electric fields (1994) (6)
- On the optical polarization properties of semipolar ( 20 2 ¯ 1 ) and ( 20 2 ¯ 1 ¯ ) InGaN/GaN quantum wells (2018) (6)
- Reducing the grain density in semipolar (11-22) AlGaN surfaces on m-plane sapphire substrates (2019) (6)
- Inhomogeneous spectral broadening in deep ultraviolet light emitting diodes (2019) (6)
- Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs (2022) (6)
- Quality CuInSe2 and Cu(In,Ga)Se2 thin films processed by single-step electrochemical deposition techniques (2015) (6)
- Hole injection mechanism in the quantum wells of blue light emitting diode with V pits for micro-display application (2019) (6)
- Adsorption structure of cyclopentene on InP(001)(2 X 4) (2009) (6)
- Comparison study of N‐ and In‐polar {0001} InN layers grown by MOVPE (2012) (6)
- Adsorbate-induced modification of the surface electronic structure at GaAs(001) surfaces (2011) (5)
- Properties and applications of the ‘‘epitaxial shadow mask molecular beam epitaxy technique’’ (1996) (5)
- Microstructure of a-plane ($$2\bar{1}\bar{1}0$$) GaN ELOG stripe patterns with different in-plane orientation (2008) (5)
- CW Operation of InGaN MQW Laser Diodes (2000) (5)
- Surface topology caused by dislocations in polar, semipolar, and nonpolar InGaN/GaN heterostructures (2014) (5)
- Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy (2013) (5)
- Optical and Structural Properties of In0.08GaN/In0.02GaN Multiple Quantum Wells Grown at Different Temperatures and with Different Indium Supplies (2010) (5)
- Extremely fast ambipolar diffusion in n-i-p-i doping superlattices investigated by an all-optical pump-and-probe technique (1999) (5)
- Growth and Optical Properties of GaN-Based Non- and Semipolar LEDs (2013) (5)
- Adsorption configurations of hydrocarbon ring molecules on GaAs(001)‐c(4 × 4) (2009) (5)
- The Quest for Uni-Directionality with WGMs in µ-Lasers: Coupled Oscillators and Amplifiers (2006) (5)
- Embedded GaN nanostripes on c‐sapphire for DFB lasers with semipolar quantum wells (2016) (5)
- Performance and optical gain characteristic of InGaN MQW laser diodes (2000) (5)
- Material characterization for III-nitride-based light emitters (1998) (5)
- Accurate determination of polarization fields in (0 0 0 1) c-plane InAlN/GaN heterostructures with capacitance-voltage-measurements (2018) (5)
- Index-Antiguiding in Narrow-Ridge GaN-Based Laser Diodes Investigated by Measurements of the Current-Dependent Gain and Index Spectra and by Self-Consistent Simulation (2015) (5)
- Monolithic waveguide-based smart pixel operating at 120 Mb/s (1997) (5)
- Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation (2017) (4)
- Optical and structural properties of InGaN light-emitters on non-polar and semipolar GaN (2013) (4)
- Group III-Nitride-Based UV Laser Diodes (2020) (4)
- Low-voltage high-contrast n-i-p-i-based waveguide modulators with alloyed selective contacts (1996) (4)
- Room-Temperature Continuous-Wave Operation of InGaN Multiple Quantum Well Laser Diodes with an Asymmetric Waveguide Structure (1999) (4)
- Defect-generation and diffusion in (In)AlGaN-based UV-B LEDs submitted to constant current stress (2018) (4)
- Radiative recombination and carrier injection efficiencies in 265 nm deep UV LEDs grown on AlN/sapphire templates with different defect densities (2022) (4)
- Ultraviolet laser diodes on sapphire and AlN substrates (2009) (4)
- Optical bistability of p-i-n and n-i-p-i structures at very low optical power (1993) (4)
- Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes (2021) (4)
- Chemical and Electrochemical Processing of High Quality CIS/CIGS Absorber, Buffer, Window, and Anti-Reflective Coating for Low Cost Photovoltaic Technology (2014) (4)
- Fully transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 2 nm (2021) (3)
- Surface Transitions During InGaN Growth on GaN(0001) in Metal–Organic Vapor Phase Epitaxy (2013) (3)
- Effect of unevenly-distributed V pits on the optical and electrical characteristics of green micro-light emitting diode (2019) (3)
- Improvement in the Reliability of AlGaInP-Based Light-Emitting Diode Package Using Optimal Silicone and Leadframe Structure (2019) (3)
- Nano-optical analysis of GaN-based diode lasers (2014) (3)
- Continuous-wave operation of DFB laser diodes based on GaN using 10$^{\rm th}$th-order laterally coupled surface gratings. (2020) (3)
- Auger effect in nonpolar quantum wells (2012) (3)
- Continuous-wave InGaN laser diodes on copper and diamond substrates (2002) (3)
- Advances in laser diode development for high resolution and high-speed printing (2000) (3)
- Comparison of fabrication methods for microstructured deep UV multimode waveguides based on fused silica (2016) (3)
- Demonstration of extremely low switching energies using new n-i-p-i-based smart pixels (1994) (3)
- Influence of the LED heterostructure on the degradation behavior of (InAlGa)N-based UV-B LEDs (2016) (3)
- Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm (2021) (3)
- Optical polarization of UV-A and UV-B (In)(Al)GaN multiple quantum well light-emitting diodes (2011) (3)
- MOVPE growth and indium incorporation of polar, semipolar (11 2‾ 2) and (20 2‾ 1) InGaN (2016) (3)
- Linearity of double heterostructure electroabsorptive waveguide modulators (1995) (3)
- Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal–Organic Vapor Phase Epitaxy (2013) (3)
- Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells (2018) (3)
- Adsorbate‐induced modification of the surface electric field of GaAs (001)‐c(4 × 4) measured via the linear electro‐optic effect (2010) (3)
- Indium incorporation in quaternary InxAlyGa1−x−yN for UVB-LEDs (2019) (3)
- In-situ optical spectroscopy and electronic properties of pyrrole sub-monolayers on Ga-rich GaAs(001) (2011) (3)
- Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1−x−yN (2019) (3)
- The emergence and prospects of deep-ultraviolet light-emitting diode technologies (2019) (3)
- Band Gap Shift of GaN under Uniaxial Strain Compression (2001) (3)
- Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE (2012) (3)
- Directional laser emission from chaotic modes in quadrupole-deformed GaN microdisks (2000) (3)
- 9.1 Laser diodes in the visible spectral range:GaN-based blue and green laser diodes (2011) (3)
- Gain and photoluminescence spectroscopy in violet and ultraviolet InAlGaN laser structures (2005) (3)
- Shape of indium nitride quantum dots and nanostructures grown by metal organic vapour phase epitaxy (2009) (3)
- Precise determination of polarization fields in c-plane GaN/AlxGa1-xN/GaN heterostructures with capacitance–voltage-measurements (2019) (3)
- Evidence for Oxygen DX Centers in AlGaN (1998) (2)
- Spectral properties of polarized light from semipolar grown InGaN quantum wells at low temperatures (2012) (2)
- Quantitative analysis of absorption and field-induced absorption changes in InGaN/GaN quantum wells (2002) (2)
- Low-threshold AlGaN-based UVB VCSELs enabled by post-growth cavity detuning (2022) (2)
- Multiwavelength light emitters for scanning applications fabricated by flipchip bonding (1998) (2)
- Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers (1998) (2)
- 10th order laterally coupled GaN-based DFB laser diodes with V-shaped surface gratings (2018) (2)
- Low resistance n-contact for UVC LEDs by a two-step plasma etching process (2020) (2)
- Integration of InGaN-based Optoelectronics with Dissimilar Substrates by Wafer Bonding and Laser Lift-off (2001) (2)
- Performance characteristics of cw InGaN multiple-quantum-well laser diodes (2000) (2)
- Spectroscopy and Modeling of Carrier Recombination in III-N Heterostructures (2001) (2)
- Optimization of InGaN/(In,Al,Ga)N based near UV‐LEDs by MQW strain balancing with in‐situ wafer bow sensor (2009) (2)
- Cw InGaN multiple-quantum-well laser diodes on copper and diamond substrates by laser lift-off (2002) (2)
- Spectrally pure far-UVC emission from AlGaN-based LEDs with dielectric band pass filters (2022) (2)
- Current spreading in UV-C LEDs emitting at 235 nm (2015) (2)
- Waveguide Optimization for Semipolar (In,Al,Ga)N Lasers (2013) (2)
- A Miniaturized UV-LED Based Optical Gas Sensor Utilizing Silica Waveguides for the Measurement of Nitrogen Dioxide and Sulphur Dioxide (2017) (2)
- Novel monolithic waveguide-based smart pixel for high-contrast, high-gain, and high-speed optical switching (1996) (1)
- Origin of defect luminescence in ultraviolet emitting AlGaN diode structures (2021) (1)
- Optimizing Light Emission from Nitride Quantum Wells (2001) (1)
- In-situ structured MBE-grown crystals for applications in optoelectronics (1993) (1)
- Study of excess carrier dynamics in polar, semi-polar, and non-polar (In,Ga)N epilayers and QWs (2011) (1)
- Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN (2012) (1)
- A Short Introduction to Semiconductor Nanophotonics (2020) (1)
- The influence of threading dislocations propagating through an AlGaN UVC LED (2022) (1)
- Monolithic waveguide smart pixels for high‐contrast and high‐gain all‐optical switching (1996) (1)
- Interplay of screening and band gap renormalization effects in near UV InGaN light emitting diodes (2008) (1)
- Bow Reduction of AlInGaN-Based Deep UV LED Wafers Using Focused Laser Patterning (2018) (1)
- Preface—JSS Focus Issue on Recent Advances in Wide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki (2019) (1)
- Influence of the hydrogen level in (InAlGa)N-based laser diodes on the stability of the device’s operating voltage (2020) (1)
- Picosecond-laser-excited photoluminescence study of AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire under selective and non-selective excitation conditions (2022) (1)
- Constructive superposition of field- and carrier induced absorption changes in hetero-n-i-p-i structures (1994) (1)
- Quantum effects of potential fluctuations in GaAs δ-doping superlattices (1994) (1)
- Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates (2023) (1)
- Disordering of InGaN/GaN Superlattices After High-Pressure Annealing (1998) (1)
- Advances in ultraviolet-emitting vertical-cavity surface-emitting lasers (2021) (1)
- Deep ultraviolet LEDs: From materials research to real-world applications (2015) (1)
- High-Q-preserving coupling between a spiral and a semicircle micro-cavity. (2007) (1)
- AlGaN multi-quantum barriers for electron blocking in group III-nitride devices (2018) (1)
- Vibrational Spectroscopy of GaN:Mg Under Pressure (2001) (1)
- Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope (2020) (1)
- Challenges for AlGaN Based UV Laser Diodes (2015) (1)
- Metalorganic vapor phase epitaxy of InN on GaN using tertiary-butylhydrazine as nitrogen source (2010) (1)
- MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes (1999) (1)
- Effects of low charge carrier wave function overlap on internal quantum efficiency in GaInN quantum wells (2010) (0)
- Laser array for emitting a plurality of wavelengths (1999) (0)
- Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope (2020) (0)
- Recent progress for blue VCSELs and challenges to move to UV (2020) (0)
- Degradation of AlGaN-based SQW UV-C LEDs investigated by capacitance deep level transient spectroscopy (2023) (0)
- M R S Internet Journal Research Nitride Semiconductor Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures. (1999) (0)
- Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations (2023) (0)
- Spiral‐shaped microcavity laser: a new class of semiconductor laser (2005) (0)
- AlGaN-based deep UV LEDs: applications and challenges (2021) (0)
- Many body effects and charge carrier kinetics studied by electro-optical experiments in type-I hetero n-i-p-i structures with selective contacts (1996) (0)
- Digital and Analog Low Power Opto-electronic and Opto-optical Elements Based on n-i-p-i Doping Superlattices (1993) (0)
- ADSORPTION OF CYCLOPENTENE ON GaAs(001) AND InP(001), A COMPARATIVE STUDY BY SYNCHROTRON-BASED CORE LEVEL SPECTROSCOPY (2009) (0)
- Optically pumped low-threshold UV lasers (2015) (0)
- New all-optical pump-and-probe technique for the investigation of the ambipolar in-plane diffusion in n-i-p-i doping superlattices (1998) (0)
- Phase separation in InGaN quantum wells (1999) (0)
- Structure laser à semiconducteur (2002) (0)
- Advances in InAlGaN laser diode technology toward the development of UV optical sources (2003) (0)
- Thin-film UV VCSELs and LEDs by electrochemical etching (2022) (0)
- InGaN MQW laser diode with integrated intracavity electroabsorption modulator (2002) (0)
- Dynamical behavior of n-i-p photoconductive detectors and switches with separate absorption and detection areas (1995) (0)
- Thin-film flip-chip UVB LEDs enabled by electrochemical etching (2021) (0)
- Advances towards deep-UV light emitting diode technologies (2021) (0)
- Waveguide modulator structures with soft optical confinement grown by the epitaxial shadow mask (ESM) MBE-technique (1997) (0)
- Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes (2013) (0)
- MultiwavelengthLight Emittersfor Scanning ApplicationsFabricatedby Flipchip Bonding (1998) (0)
- A method of forming a metal contact on a surface of a semiconductor device and to a metal contact (2013) (0)
- Optical and electrical properties of quantum wells with electrically tunable two-dimensional electron density by selective contacts (1995) (0)
- Fabrication of thin film InGaN LED membranes by laser liftoff (1999) (0)
- Performance characteristics of CW InGaN multiple quantum well laser diodes (2000) (0)
- From heterostructure design to package: development of efficient and reliable UVB LEDs (Conference Presentation) (2018) (0)
- Direct determination of the built-in polarization field in InGaN/GaN quantum wells (2002) (0)
- LASERS, OPTICS, AND OPTOELECTRONICS 121101 Large optical bandwidth and polarization insensitive semiconductor optical amplifiers using strained InGaAsP quantum wells (3 pages) (2010) (0)
- III-nitride deep UV laser on sapphire substrate (2015) (0)
- Disc-shaped microcavity with grating for outcoupling (2004) (0)
- Development of far-UVC LEDs and their application in irradiation systems for antisepsis and sensing (2022) (0)
- Polarization fields in semipolar ( 20 2 ¯ 1 ¯ ) and ( 20 2 ¯ 1 ) InGaN light emitting diodes (2020) (0)
- Evaluation of (In,Ga)N Films as Optical Absorption Filters for Application in Integrated Fluorescence Detection Micro-Bioanalytical Systems (2001) (0)
- Characterization of AlGaInN heterostructures and laser diodes (1998) (0)
- Quantification of Trace-Level Silicon Doping in AlxGa1–xN Films Using Wavelength-Dispersive X-Ray Microanalysis (2021) (0)
- Fast MSM modulators based on the two-dimensional Franz-Keldysh effect in MQW structures (1996) (0)
- Core–Shell Nanorods as Ultraviolet Light-Emitting Diodes (2023) (0)
- Carrier Transport in Multi Colour Deep Ultraviolet Light Emitting Diodes (2022) (0)
- Varying the Overlap of Direct-Coupling between Spiral and Semicircle Semiconductor Microdisk Lasers (2007) (0)
- Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations (2023) (0)
- Dual III-V Nitridlaserstruktur with reduced thermal crosstalk (2002) (0)
- [YIA] The influence of skin barrier disruption and melanin content on the formation of DNA lesions and radicals in ex vivo human skin induced by 233 nm far-UVC irradiation from LEDs (2022) (0)
- Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin (2022) (0)
- Characterization of gain- and index-guided InGaN multiple quantum well laser diodes (1998) (0)
- UVB-emitting vertical-cavity surface-emitting laser (2020) (0)
- Refractive index changes of low temperature grown GaAs depending on its annealing history (1994) (0)
- UV LED reliability: degradation mechanisms and challenges (2022) (0)
- Metal-semiconductor-metal-modulator structures based on electroabsorption in low temperature grown (Al)GaAs (1996) (0)
- Optical switching with gain in waveguide-modulator structures (1996) (0)
- Author Correction: Skin tolerant inactivation of multiresistant pathogens using far-UVC LEDs (2022) (0)
- Out of the blue: UV VCSELs (2022) (0)
- Are blue and ultraviolet VCSELs a reality or just a dream (2020) (0)
- Waveguide modulators based on the Franz-Keldysh effect with linear transmission-voltage characteristics (1994) (0)
- Electrical properties and microstructure of V/Al/Ni/Au contacts on n-Al0.65Ga0.35N:Si with different Au thicknesses and annealing temperatures (2022) (0)
- Increased Light Extraction of Thin-Film Flip-Chip UVB LEDs by Surface Texturing (2023) (0)
- Low voltage high contrast n-i-p-i based waveguide modulator (1996) (0)
- Ultraviolet InGaN, AlGaN, and InAIGaN multiple-quantum-well laser diodes (2004) (0)
- Uni-directionally blue emitting spiral-shaped micropillar laser diode (2004) (0)
- Ubiquitous blue light: The integration of InGaN-based optoelectronics with dissimilar substrates by wafer bonding and laser lift-off (2000) (0)
- Opto-optical switches, optical logic gates, and memory cells realized with doping superlattices (1993) (0)
- Fast electro-optic modulation with selectively contacted n-i-p-i structures (1996) (0)
- Spiral-shaped microdisk lasers (2005) (0)
- Towards sub-300 nm laser diodes on bulk AlN substrates (2011) (0)
- Integration of In x Ga 1−x N Laser Diodes with Dissimilar Substrates by Laser Lift-off (2000) (0)
- MOVPE Growth of Smooth and Homogeneous Al0.8 Ga0.2 N:Si Superlattices as UVC Laser Cladding Layers (Phys. Status Solidi A 11∕2018) (2018) (0)
- Optimization of the structure and epitraxy process for the active region, LED simulation and chipdesign (2017) (0)
- Epitaxy and simulation of UV-C-LEDs (2017) (0)
- Electrically and Optically Addressable Spatial Light Modulators Based on n-i-p-i Doping Superlattices (1995) (0)
- III-N optoelectronic devices: understanding the physics of electro-optical degradation (2023) (0)
- Microscopic recombination kinetics in high quality, fully coalesced a-plane GaN ELO structures investigated by ps-time-resolved cathodoluminescence microscopy (2008) (0)
- Band gap of GaN under shock compression (2000) (0)
- Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs (2023) (0)
- Characterization of InGaN/AlGaN multiple-quantum-well laser diodes (1999) (0)
- Characterization of nitride semiconductor heterostructures and laser diodes (1999) (0)
- Growth and characterization of manganese-doped InAsP (2008) (0)
- Al0.82Ga0.18N (2015) (0)
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