Michael R. Melloch
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Michael R. Mellochengineering Degrees
Engineering
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Electrical Engineering
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Applied Physics
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Engineering
Michael R. Melloch's Degrees
- PhD Electrical Engineering Stanford University
- Masters Electrical Engineering Stanford University
Why Is Michael R. Melloch Influential?
(Suggest an Edit or Addition)Michael R. Melloch's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Status and prospects for SiC power MOSFETs (2002) (404)
- Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy (1990) (389)
- CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES 3202 Controlled doping of phthalocyanine layers by cosublimation with acceptor molecules: A systematic Seebeck and conductivity study (1998) (251)
- Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures (1990) (232)
- The Kondo Effect in an Artificial Quantum Dot Molecule (2001) (225)
- SiC power Schottky and PiN diodes (2002) (221)
- High-voltage double-implanted power MOSFET's in 6H-SiC (1997) (214)
- Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers (1998) (208)
- Effects of Na2S and (NH4)2S edge passivation treatments on the dark current‐voltage characteristics of GaAs pn diodes (1988) (173)
- Carrier lifetime versus anneal in low temperature growth GaAs (1993) (161)
- Transition between quantum states in a parallel-coupled double quantum dot. (2003) (156)
- High-voltage accumulation-layer UMOSFET's in 4H-SiC (1998) (155)
- Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interface (1995) (151)
- Photorefractive quantum wells: Transverse Franz-Keldysh geometry (1992) (144)
- Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers (1991) (133)
- Subsurface charge accumulation imaging of a quantum Hall liquid (1998) (128)
- Schottky barrier formation on (NH4)2S‐treated n‐ and p‐type (100)GaAs (1988) (114)
- 2.6 kV 4H-SiC lateral DMOSFETs (1998) (113)
- The role of point defects and arsenic precipitates in carrier trapping and recombination in low‐temperature grown GaAs (1996) (112)
- Low-Temperature Grown III-V Materials (1995) (110)
- Evidence for macroscopic quantum tunneling of phase slips in long one-dimensional superconducting Al wires. (2005) (103)
- Surface roughening in ion implanted 4H-silicon carbide (1999) (97)
- Monolithic NMOS digital integrated circuits in 6H-SiC (1994) (96)
- Proposed structure for large quantum interference effects (1986) (93)
- Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbide (1998) (91)
- Nucleation and characterization of pseudomorphic ZnSe grown on molecular beam epitaxially grown GaAs epilayers (1987) (89)
- METAL-OXIDE-SEMICONDUCTOR CAPACITORS FORMED BY OXIDATION OF POLYCRYSTALLINE SILICON ON SIC (1997) (89)
- Assessment of MOCVD- and MBE-growth GaAs for high-efficiency solar cell applications (1990) (87)
- Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiC (1994) (83)
- Carrier dynamics of low-temperature-grown GaAs observed via THz spectroscopy (1997) (83)
- Dynamic nuclear polarization at the edge of a two-dimensional electron gas (1997) (80)
- High-power narrow-band terahertz generation using large-aperture photoconductors (1999) (79)
- Holographic optical coherence imaging of tumor spheroids (2003) (79)
- Substrate temperature dependence of arsenic precipitate formation in AlGaAs and GaAs (1991) (78)
- Electrically pumped tunable terahertz emitter based on intersubband transition (1997) (75)
- Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide (2000) (74)
- Digital CMOS IC's in 6H-SiC operating on a 5-V power supply (1998) (72)
- Photorefractive holography for imaging through turbid media using low coherence light (2000) (72)
- Time-dependent speckle in holographic optical coherence imaging and the health of tumor tissue. (2004) (70)
- Effect of substrate orientation and crystal anisotropy on the thermally oxidized SiO2/SiC interface (1996) (70)
- Investigations of ammonium sulfide surface treatments on GaAs (1989) (69)
- Very low resistance nonalloyed ohmic contacts using low‐temperature molecular beam epitaxy of GaAs (1995) (69)
- X‐ray photoelectron spectroscopy of ammonium sulfide treated GaAs (100) surfaces (1989) (68)
- Surface and perimeter recombination in GaAs diodes: an experimental and theoretical investigation (1991) (68)
- Phosphorus implantation into 4H-silicon carbide (2000) (66)
- 1.3- mu m P-i-N photodetector using GaAs with As precipitates (GaAs:As) (1991) (66)
- Narrow-linewidth terahertz intersubband emission from three-level systems (1999) (66)
- Molecular beam epitaxy of nonstoichiometric semiconductors and multiphase material systems (1996) (64)
- Effect of a GaAs buffer layer grown at low substrate temperatures on a high‐electron‐mobility modulation‐doped two‐dimensional electron gas (1989) (63)
- Laser-based ultrasound detection using photorefractive quantum wells (1998) (62)
- Holographic optical coherence imaging of rat osteogenic sarcoma tumor spheroids. (2004) (62)
- Femtosecond pulse shaping by dynamic holograms in photorefractive multiple quantum wells (1997) (59)
- HOLOGRAPHIC STORAGE AND HIGH BACKGROUND IMAGING USING PHOTOREFRACTIVE MULTIPLE QUANTUM WELLS (1996) (59)
- Static and dynamic characterization of large-area high-current-density SiC Schottky diodes (1998) (59)
- A study of minority carrier lifetime versus doping concentration in n‐type GaAs grown by metalorganic chemical vapor deposition (1992) (58)
- GHz bandwidth GaAs light-emitting diodes (1999) (55)
- Pseudomorphic ZnSe/n‐GaAs doped‐channel field‐effect transistors by interrupted molecular beam epitaxy (1988) (54)
- Comparison of terahertz waveforms measured by electro-optic and photoconductive sampling (1998) (54)
- Formation of two‐dimensional arsenic‐precipitate arrays in GaAs (1992) (54)
- Two‐wave mixing in photorefractive AlGaAs/GaAs quantum wells (1991) (51)
- Experimental demonstration of a silicon carbide IMPATT oscillator (2001) (50)
- Depth-resolved holography through turbid media using photorefraction (1996) (49)
- Two-wave-mixing dynamics and nonlinear hot-electron transport in transverse-geometry photorefractive quantum wells studied by moving gratings (1999) (49)
- GaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitates (1991) (48)
- Arsenic cluster dynamics in doped GaAs (1992) (48)
- Single-electron transistor as a charge sensor for semiconductor applications (1997) (48)
- Analysis of terahertz waveforms measured by photoconductive and electrooptic sampling (1999) (47)
- Arsenic precipitates in Al0.3Ga0.7As/GaAs multiple superlattice and quantum well structures (1992) (47)
- High-voltage accumulation-layer UMOSFETs in 4H-SiC (1998) (45)
- Fundamentals of SiC-Based Device Processing (1997) (45)
- A dual-metal-trench Schottky pinch-rectifier in 4H-SiC (1998) (45)
- Recent Advances in SiC Power Devices (1997) (45)
- Elimination of beam walk-off in low-coherence off-axis photorefractive holography. (2001) (44)
- PHOTOREFRACTIVE P-I-N DIODE QUANTUM WELL SPATIAL LIGHT MODULATORS (1995) (42)
- Permittivity of GaAs epilayers containing arsenic precipitates (1998) (42)
- Device-related material properties of heavily doped gallium arsenide (1990) (42)
- Influence of perimeter recombination on high-efficiency GaAs p/n heteroface solar cells (1988) (42)
- Minority‐carrier lifetime and photon recycling in n‐GaAs (1992) (42)
- Generation and characterization of terahertz pulse trains from biased, large-aperture photoconductors. (1999) (41)
- Time-domain image processing using dynamic holography (1998) (41)
- Direct-to-video holographic readout in quantum wells for three-dimensional imaging through turbid media. (1998) (41)
- Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface (1989) (40)
- N-channel 3C-SiC MOSFETs on silicon substrate (2002) (40)
- Use of nonstoichiometry to form GaAs tunnel junctions (1997) (40)
- The effects of heavy impurity doping on AlGaAs/GaAs bipolar transistors (1989) (39)
- Enhanced electro‐optic properties of low‐temperature‐growth GaAs and AlGaAs (1993) (39)
- Diffusivity transients and radiative recombination in intermixed In{sub 0.5}Ga{sub 0.5}As/GaAs quantum structures (1997) (38)
- Temperature dependence of minority and majority carrier mobilities in degenerately doped GaAs (1995) (37)
- Ultrafast‐lifetime quantum wells with sharp exciton spectra (1995) (37)
- High‐efficiency Stark‐geometry photorefractive quantum wells with intrinsic cladding layers (1996) (37)
- Effective band‐gap shrinkage in GaAs (1994) (36)
- Fourier-domain holographic optical coherence imaging of tumor spheroids and mouse eye. (2005) (36)
- Digital communications above 1 Gb/s using 890-nm surface-emitting light-emitting diodes (2001) (36)
- NONEQUILIBRIUM CHARACTERISTICS OF THE GATE-CONTROLLED DIODE IN 6H-SIC (1994) (36)
- Adaptive beam combining and interferometry with photorefractive quantum wells (2001) (36)
- Arsenic precipitate accumulation and depletion zones at AlGaAs/GaAs heterojunctions grown at low substrate temperature by molecular beam epitaxy (1992) (34)
- Growth of crack-free hexagonal GaN films on Si(100) (2001) (34)
- One‐dimensional to one‐dimensional tunnelling between electron waveguides (1994) (34)
- Formation of low resistivity ohmic contacts to n-type 3C-SiC (2002) (33)
- Comparison of thermally oxidized metal–oxide–semiconductor interfaces on 4H and 6H polytypes of silicon carbide (1996) (33)
- Photoemission spectroscopy of GaAs:As photodiodes (1992) (33)
- Short-coherence photorefractive holography in multiple-quantum-well devices using light-emitting diodes (1999) (32)
- Electrical characteristics of rectifying polycrystalline silicon/silicon carbide heterojunctions (1998) (31)
- Photorefractive asymmetric Fabry–Pérot quantum wells: Transverse‐field geometry (1995) (31)
- Surface passivation effects of As2S3 glass on self-aligned AlGaAs/GaAs heterojunction bipolar transistors (1990) (31)
- Microsecond lifetimes and low interface recombination velocities in moderately doped n‐GaAs thin films (1992) (31)
- Plasma‐induced damage of GaAs pn‐junction diodes using electron cyclotron resonance generated Cl2/Ar, BCl3/Ar, Cl2/BCl3/Ar, and SiCl4/Ar plasmas (1995) (31)
- GaN epilayers grown on 100 mm diameter Si(111) substrates (2000) (31)
- Split‐gate dual‐electron waveguide device (1992) (30)
- Steady-state four-wave mixing in photorefractive quantum wells with femtosecond pulses (1994) (30)
- Experimental demonstration of a buried-channel charge-coupled device in 6H silicon carbide (1996) (30)
- Minority‐carrier mobility enhancement in p+ InGaAs lattice matched to InP (1993) (30)
- Optical emission properties of semi‐insulating GaAs grown at low temperatures by molecular beam epitaxy (1992) (29)
- Photorefractive Quantum Wells and Thin Films (1995) (29)
- Effects of heavy impurity doping on electron injection in p+‐n GaAs diodes (1988) (28)
- Guided self-assembly of Au nanocluster arrays electronically coupled to semiconductor device layers (2000) (28)
- Enhanced diffusion in nonstoichiometric quantum wells and the decay of supersaturated vacancy concentrations (1996) (27)
- GaAs, AlGaAs, and InGaAs epilayers containing As clusters: semimetal/semiconductor composites (1993) (27)
- Monolithic CMOS digital integrated circuits in 6H-SiC using an implanted p-well process (1997) (27)
- High‐density optical storage based on nanometer‐size arsenic clusters in low‐temperature‐growth GaAs (1992) (26)
- New optoelectronic tip design for ultrafast scanning tunneling microscopy (1996) (26)
- Orientation‐dependent perimeter recombination in GaAs diodes (1990) (26)
- High resolution x‐ray diffraction analysis of annealed low‐temperature gallium arsenide (1992) (25)
- THE ROLE OF EXCESS ARSENIC IN INTERFACE MIXING IN LOW-TEMPERATURE-GROWN ALAS/GAAS SUPERLATTICES (1995) (25)
- High-efficiency GaAs solar cells grown by molecular-beam epitaxy (1990) (25)
- Photoluminescence of short-period GaAs/AlAs superlattices: A hydrostatic pressure and temperature study (1998) (25)
- Effects of perimeter recombination on GaAs-based solar cells (1990) (25)
- Experimental observation of a minority electron mobility enhancement in degenerately doped p‐type GaAs (1993) (25)
- Effect of epilayer characteristics and processing conditions on the thermally oxidized SiO2/SiC interface (1998) (25)
- A vertically integrated bipolar storage cell in 6H silicon carbide for nonvolatile memory applications (1994) (24)
- Far‐infrared radiation‐induced thermopower in a quantum point contact (1995) (24)
- Increased thermal generation rate in GaAs due to electron‐beam metallization (1992) (24)
- Electrical characterization of an epitaxial ZnSe/epitaxial GaAs heterointerface (1989) (24)
- Precipitation in Fe‐ or Ni‐implanted and annealed GaAs (1994) (24)
- Activation of nitrogen implants in 6H-SiC (1997) (23)
- One-transistor GaAs MESFET- and JFET-accessed dynamic RAM cells for high-speed medium density applications (1990) (23)
- Electromodulation study of GaAs with excess arsenic (1992) (23)
- THE EFFECT OF THERMAL PROCESSING ON POLYCRYSTALLINE SILICON/SIO2/6H-SIC METAL-OXIDE-SEMICONDUCTOR DEVICES (1996) (22)
- Effective minority‐carrier hole confinement of Si‐doped, n+‐n GaAs homojunction barriers (1989) (22)
- A novel self-aligned fabrication process for microwave static induction transistors in silicon carbide (2000) (22)
- Minority hole mobility in n+GaAs (1992) (21)
- Epitaxial GaN films grown on Si(1 1 1) with varied buffer layers (2001) (21)
- Effects of electron-beam-induced damage on leakage currents in back-gated GaAs/AlGaAs devices (1993) (21)
- Transistor‐based measurements of electron injection currents in p‐type GaAs doped 1018–1020 cm−3 (1990) (21)
- 4 kV silicon carbide Schottky diodes for high-frequency switching applications (1999) (21)
- Direct observation of LO phonon-plasmon coupled modes in the infrared transmission spectra of n-GaAs and n-InxGa1-xAs epilayers (2004) (20)
- Robust infrared gratings in photorefractive quantum wells generated by an above‐band‐gap laser (1991) (20)
- Dynamic holography in a reflection/transmission photorefractive quantum‐well asymmetric Fabry–Perot (1994) (20)
- Propagation loss of the acoustic pseudosurface wave on (ZXt)45° GaAs (1983) (20)
- Effect of impurity trapping on the capacitance‐voltage characteristics of n‐GaAs/N‐AlGaAs heterojunctions (1986) (20)
- High-frequency ( THz) studies of quantum-effect devices (1996) (20)
- High-Voltage (2.6 kV) Lateral DMOSFETs in 4H-SiC (1997) (19)
- A thermal-generation-limited buried-well structure for room-temperature GaAs dynamic RAM's (1987) (19)
- Erratum: Evidence for Macroscopic Quantum Tunneling of Phase Slips in Long One-Dimensional Superconducting Al Wires [Phys. Rev. Lett. 97, 017001 (2006)] (2007) (19)
- Experimental characterization of electron-hole generation in silicon carbide (1996) (19)
- An ohmic nanocontact to GaAs (1999) (19)
- Ohmic nanocontacts to GaAs using undoped and p-doped layers of low-temperature-grown GaAs (2000) (18)
- High frame-rate, 3-D photorefractive holography through turbid media with arbitrary sources, and photorefractive structured illumination (2001) (18)
- Ultranarrow AuPd and Al wires (2004) (18)
- Measurement of far-infrared intersubband spontaneous emission from optically pumped quantum wells (1998) (18)
- Spatial-harmonic gratings at high modulation depths in photorefractive quantum wells. (1991) (18)
- Arsenic cluster engineering for excitonic electro‐optics (1993) (18)
- Self-aligned 6H-SiC MOSFETs with improved current drive (1995) (17)
- MAGNETIC AND MAGNETORESISTANCE MEASUREMENTS ON IRON-BASED NANOCLUSTERS IN IN0.53GA0.47AS (1997) (17)
- Adaptive all-order dispersion compensation of ultrafast laser pulses using dynamic spectral holography (1999) (17)
- Electron waveguide devices (1998) (17)
- Bandwidth-limited diffraction of femtosecond pulses from photorefractive quantum wells (1997) (17)
- Real-time edge enhancement of femtosecond time-domain images by use of photorefractive quantum wells. (1997) (17)
- Aharonov-Bohm effect in semiconductor micro-structures: novel device possibilities (1986) (17)
- Dynamic charge storage in 6H silicon carbide (1992) (16)
- High-speed depth-sectioned wide-field imaging using low-coherence photorefractive holographic microscopy (2003) (16)
- Real-time 3-D holographic imaging using photorefractive media including multiple-quantum-well devices (1998) (16)
- Measurement considerations for zero-field time-of-flight studies of minority carrier diffusion in III–V semiconductors (1992) (16)
- Concentration‐dependent optical‐absorption coefficient in n‐type GaAs (1993) (16)
- A quantitative conduction model for a low-resistance nonalloyed ohmic contact structure utilizing low-temperature-grown GaAs (2000) (15)
- CHARACTERIZATION OF PHOTON RECYCLING IN THIN CRYSTALLINE GAAS LIGHT EMITTING DIODES (1995) (15)
- Incorporation of Excess Arsenic in GaAs and AlGaAs Epilayers Grown at Low Substrate Temperatures by Molecular Beam Epitaxy (1991) (15)
- Demonstration of npn InAs bipolar transistors with inverted base doping (1996) (15)
- Nanometer-scale studies of Al–Ga interdiffusion and As precipitate coarsening in nonstoichiometric AlAs/GaAs superlattices (1999) (15)
- Ultrasound detection through turbid media. (2003) (15)
- Electrical and structural properties of Be‐ and Si‐doped low‐temperature‐grown GaAs (1995) (15)
- Bandgap and Defect Engineering for Semiconductor Holographic Materials: Photorefractive Quantum Wells and Thin Films (1994) (15)
- Extremely low-leakage GaAs P-i-N junctions and memory capacitors grown by atomic layer epitaxy (1990) (14)
- Electron emission from direct bandgap heterojunction capacitors (1989) (14)
- Fourier-domain holography in photorefractive quantum-well films. (2004) (14)
- Molecular beam epitaxy regrowth by use of ammonium sulfide chemical treatments (1990) (14)
- Acoustic barriers and observation of guided elastic waves in GaN-AlN structures by Brillouin scattering (2001) (14)
- Direct-to-video holographic 3-D imaging using photorefractive multiple quantum well devices: errata. (1998) (14)
- 6H-SiC CMOS digital ICs operating on a 5 V power supply (1997) (14)
- Investigation of interface intermixing and roughening in low‐temperature‐grown AlAs/GaAs multiple quantum wells during thermal annealing by chemical lattice imaging and x‐ray diffraction (1995) (14)
- Vertical three-terminal structures in semiconductor heterostructure quantum wells using a novel sidewall gating technique (1995) (13)
- Extremely long capacitance transients in 6H‐SiC metal‐oxide‐semiconductor capacitors (1995) (13)
- Transient enhanced intermixing of arsenic-rich nonstoichiometric AlAs/GaAs quantum wells (1999) (13)
- Thermal velocity limits to diffusive electron transport in thin-base np + n GaAs bipolar transistors (1994) (13)
- Large-area, 8-cm/sup 2/ GaAs solar cells fabricated from MBE material (1991) (12)
- Temperature-dependent behavior of low-temperature-grown GaAs nonalloyed ohmic contacts (2001) (12)
- Capacitance‐voltage and current‐voltage characteristics of molecular beam epitaxially grown p+‐GaAs/AlAs/n‐GaAs heterostructures (1986) (12)
- Multi-day dynamic storage of holes at the AlAs/GaAs interface (1986) (12)
- Sequential etch analysis of electron injection in p/sup +/-GaAs (1988) (12)
- Optical absorption by Ag precipitates in AlGaAs (1997) (12)
- Nonlinear charge transport in photorefractive semiconductor quantum wells (2001) (12)
- ANNEALING STABILITY AND DEVICE APPLICATION OF NONALLOYED OHMIC CONTACTS USING A LOW TEMPERATURE GROWN GAAS CAP ON THIN N+ GAAS LAYERS (1997) (12)
- Observation of above‐barrier quasi‐bound states in asymmetric single quantum wells by piezomodulated reflectivity (1991) (11)
- A transfer length model for contact resistance of two-layer systems with arbitrary interlayer coupling under the contacts (1996) (11)
- The continuing drama of the semiconductor interface (1993) (11)
- Wide‐band monolithic GaAs convolver and memory correlator (1983) (11)
- Experimental determination of the effects of degenerate Fermi statistics on heavily p‐doped GaAs (1991) (11)
- Evidence of long-term storage of minority carriers in N+-GaAs/AlGaAs/P-GaAs MIS capacitors (1986) (11)
- Electroabsorption spectroscopy of effective-mass Al x Ga 1 − x A s / G a A s Fibonacci superlattices (1997) (11)
- Effect of a buried superlattice on the dynamic storage of electrons at the AlGaAs/GaAs heterojunction (1987) (11)
- 2.7 kV epitaxial lateral power DMOSFETs in 4H-SiC (2000) (11)
- Electrical characterization of a JFET-accessed GaAs dynamic RAM cell (1989) (11)
- Silicon carbide IMPATT oscillators for high-power microwave and millimeter-wave generation (2000) (11)
- Enhanced detection bandwidth for optical doppler frequency measurements using moving space charge field effects in GaAs multiple quantum wells (1997) (11)
- Interface transduction in the ZnO‐SiO2‐Si surface acoustic wave device configuration (1980) (11)
- Fabrication and operation of a velocity modulation transistor (2001) (11)
- Evidence for band-gap narrowing effects in Be-doped, p-p+ GaAs homojunction barriers (1988) (10)
- Functional imaging in photorefractive tissue speckle holography (2008) (10)
- Wide-field, real-time depth-resolved imaging using structured illumination with photorefractive holography (2002) (10)
- Structural analysis of as-deposited and annealed low-temperature gallium arsenide (1993) (10)
- Self‐aligned sidewall gated resonant tunneling transistors (1996) (10)
- High-speed adaptive interferometer for optical coherence-domain reflectometry through turbid media. (2003) (10)
- Thin-oxide silicon-gate self-aligned 6H-SiC MOSFETs fabricated with a low-temperature source/drain implant activation anneal (1997) (10)
- Electroabsorption field imaging between coplanar metal contacts on semi‐insulating semiconductor epilayers (1996) (10)
- Two-dimensional arsenic-precipitate structures in GaAs (1993) (10)
- Significant long-term reduction in n-channel MESFET subthreshold leakage using ammonium-sulfide surface treated gates (1991) (10)
- High-speed 3D imaging using photorefractive holography with novel low-coherence interferometers (2001) (10)
- High-gain, low-leakage GaAs pseudo-HBT's for operation in reduced temperature environments (1991) (10)
- Modeling electric-field-sensitive scanning probe measurements for a tip of arbitrary shape. (2003) (9)
- Oscillatory mode coupling and electrically strobed gratings in photorefractive quantum-well diodes. (1998) (9)
- Observation of electronic states confined in surface quantum wells and above quantum barriers with modulated reflectivity (1994) (9)
- Numerically generated resonant tunneling diode equivalent circuit parameters (1994) (9)
- The Electrical and Optical Properties of GaAs with as Precipitates (GaAs:As) (1991) (9)
- Thin-film GaAs solar cells by epitaxial lift-off (1993) (9)
- Fabrication of parallel quasi‐one‐dimensional wires using a novel conformable x‐ray mask technology (1992) (9)
- Linear electroabsorption in semi-insulating GaAs/AlGaAs asymmetric double quantum wells (1999) (9)
- Heteroface bipolar transistor based on bandgap narrowing in p/sup +/-GaAs (1988) (9)
- Interface and contact structures for nanoelectronic devices using assemblies of metallic nanoclusters, conjugated organic molecules and chemically stable semiconductor layers (2000) (9)
- Enhanced student perceptions of learning and performance using concept-point-recovery teaching sessions: a mixed-method approach (2021) (9)
- Self-assembled metal/molecule/semiconductor nanostructures for electronic device and contact applications (2000) (9)
- A vertically integrated GaAs bipolar dynamic RAM cell with storage times of 4.5 h at room temperature (1992) (9)
- Photosensitive capacitance‐voltage characteristics of molecular beam epitaxially grown GaAs/AlGaAs/GaAs heterostructures (1986) (9)
- Zero-Field Time-of-Flight Measurements of Electron Diffusion in P+-GaAs (1991) (9)
- Broadband low-dispersion diffraction of femtosecond pulses from photorefractive quantum wells (2000) (9)
- Fabrication using x‐ray nanolithography and measurement of Coulomb blockade in a variable‐sized quantum dot (1994) (9)
- Magnetic-field-induced crossover to a nonuniversal regime in a Kondo dot. (2009) (9)
- Hybrid resonant/near-resonant photorefractive structure : InGaAs/GaAs multiple quantum wells (1993) (9)
- Comparative mobility degradation in modulation‐doped GaAs devices after e‐beam and x‐ray irradiation (1992) (9)
- Imaging a two-dimensional electron system with a scanning charged probe (2004) (9)
- A 4-GHz large-area (160000 μm/sup 2/) MSM-PD on ITG-GaAs (2000) (9)
- Nanoelectronic device applications of a chemically stable GaAs structure (1999) (9)
- Surface acoustic wave memory correlator on semi‐insulating GaAs (1983) (8)
- Investigation of plasma etch induced damage in compound semiconductor devices (1994) (8)
- Reflection-geometry photorefractive quantum wells. (1996) (8)
- Long term storage of inversion holes at a superlattice/GaAs interface (1986) (8)
- Use of annealed low‐temperature grown GaAs as a selective photoetch‐stop layer (1996) (8)
- Superparamagnetic behavior of Fe3GaAs precipitates in GaAs (1997) (8)
- Pre-illumination to Control The Active Trap Density in a Semi-Insulating MQW Device (1998) (8)
- TWO-WAVE MIXING IN STARK GEOMETRY PHOTOREFRACTIVE QUANTUM WELLS USING MOVING GRATINGS (1996) (8)
- Dynamic response of a spin-1/2 Kondo singlet (2013) (8)
- Molecular beam epitaxy for high electron mobility modulation-doped two-dimensional electron gases (1993) (8)
- Electrical measurements of bandgap shrinkage in heavily dopedp-type GaAs (1990) (8)
- ELECTRO-OPTIC AND PHOTOREFRACTIVE PROPERTIES OF LONG-PERIOD FIBONACCI SUPERLATTICES (1996) (8)
- PHOTOCONDUCTIVELY SWITCHED ANTENNAS FOR MEASURING TARGET RESONANCES (1994) (8)
- Influence of the AlN buffer layer growth on AlGaN/GaN films deposited on (1 1 1)Si substrates (2001) (8)
- Precipitation of arsenic in doped GaAs (1993) (8)
- Molecular beam epitaxy of high‐quality, nonstoichiometric multiple quantum wells (1996) (8)
- Comparative study of minority electron properties in p+‐GaAs doped with beryllium and carbon (1992) (8)
- Design and demonstration of C-band static induction transistors in 4H silicon carbide (1999) (7)
- A 4-GHz Large-Area (160 000 μm ) MSM-PD on ITG-GaAs (2000) (7)
- Nonequilibrium Green’s function method for a quantum Hall device in a magnetic field (2003) (7)
- Multiple-scattering speckle in holographic optical coherence imaging (2009) (7)
- Real space transfer in a velocity modulated transistor structure (1997) (7)
- Comparison of various buffer schemes to grow GaN on large-area Si(111) substrates using metal-organic chemical-vapor deposition (2003) (7)
- Direct current and microwave characterization of integrated resonant tunneling diodes (1995) (7)
- Structural characterization of GaAs grown at low temperatures by molecular beam epitaxy (1995) (7)
- Conductance quantization in a GaAs electron waveguide device fabricated by x‐ray lithography (1992) (7)
- Technique for measurement of the minority carrier mobility with a bipolar junction transistor (1997) (7)
- High‐efficiency Al0.22Ga0.78As solar cells grown by molecular beam epitaxy (1990) (7)
- Determination of minority carrier lifetimes in n-type GaAs and their implications for solar cells (1991) (7)
- Demonstration of IMPATT Diode Oscillators in 4H-SiC (2002) (6)
- Planar 6H-SiC MESFETs with vanadium implanted channel termination (1997) (6)
- MBE Of ZnSe On GaAs Epilayers (1987) (6)
- High-speed wide-field coherence-gated imaging via photorefractive holography with photorefractive multiple quantum well devices (2003) (6)
- SiC Power Electronic Devices, MOSFETs and Rectifiers (1999) (6)
- Imaging of tumor necroses using full-frame optical coherence imaging (2003) (6)
- Novel GaAs photodetector with gain for long wavelength detection (1995) (6)
- Signal strength enhancement and bandwidth tuning in moving space charge field photodetectors using alternating bias field (1998) (6)
- Surface acoustic wave mode conversion resonator (1983) (6)
- Influence of electronic states on precipitation of metallic As clusters in LT-GaAs (2000) (6)
- MOS characterization of thermally oxided 6H silicon carbide (1993) (6)
- GaAs Strip-Coupled Memory Correlators (1983) (6)
- A novel quantum interference transistor (QUIT) with extremely low power-delay product and very high transconductance (1986) (5)
- Bias-dependent photoresponse of p+ in GaAs/AlAs/GaAs diodes (1987) (5)
- Crack-Free, Single-Crystal GaN Grown on 100 mm Diameter Silicon (2000) (5)
- Inversion channel MOSFETs in 3C-SiC on silicon (2002) (5)
- Detection of picosecond electrical transients in a scanning tunneling microscope (1996) (5)
- High-efficiency GaAs and AlGaAs solar cells grown by molecular beam epitaxy (1990) (5)
- Strip Coupled Schottky Diode Memory Correlator on Semi-Insulating GaAs (1982) (5)
- NMOS digital integrated circuits in 6h silicon carbide (1994) (5)
- Correlation of oscillations in a quantum dot with three contacts (1995) (5)
- Direct-to-video holographic 3-D imaging using photorefractive multiple quantum well devices. (1998) (5)
- Special Issue on Low-Temperature Grown GaAs and Related Materials - Foreword (1993) (5)
- Modulated reflectivity spectroscopy of electronic states confined in surface quantum wells and above quantum barriers (1995) (5)
- High frequency CV characteristics of plasma oxidised silicon carbide (1997) (5)
- Single-Phase and Balanced Separate Comb Transducer Configurations in a ZnO/Si SAW Structure (1982) (5)
- Characterization of a GaAs/AlGaAs modulation‐doped dynamic random access memory cell (1992) (4)
- Ultrafast carrier dynamics and optical nonlinearities of low-temperature-grown multiple quantum wells (1998) (4)
- Development, demonstration, and device physics of FET -accessed one-transistor gallium arsenide dynamic memory technologies (1991) (4)
- Long-term charge storage in GaP pn junction capacitors (1993) (4)
- Recombination‐current suppression in GaAs p‐n junctions grown on AlGaAs buffer layers by molecular‐beam epitaxy (1987) (4)
- Influence of bandgap narrowing effects in p/sup +/-GaAs on solar cell performance (1988) (4)
- Ion implant technology for 6H-SiC MESFET's digital ICs (1996) (4)
- Surface Fermi level engineering: Or there is more to Schottky barriers than just making diodes and field effect transistor gates (1991) (4)
- II–VI/III–V heterointerfaces: Epilayer-on-epilayer structures (1989) (4)
- Adaptive femtosecond optical pulse combining (2000) (4)
- Review of the application of molecular beam epitaxy for high efficiency solar cell research (1991) (4)
- Enhanced diffusion in laser-annealed nonstoichiometric AlAs/GaAs heterostructures (2000) (4)
- Sezawa to Rayleigh mode conversion in the ZnO-on-Si surface acoustic wave device configuration (1981) (4)
- Effects of nitrogen implant activation on the SiC/SiO/sub 2/ interface of 6H-SiC self-aligned NMOSFET's (1998) (4)
- Bias Stable Zinc Oxide-On-Silicon Surface Acoustic Wave Devices (1981) (4)
- Electron Transport in Thin-Base InP/InGaAs HBT's (1992) (4)
- Electrical behavior of a static hole inversion layer at the i‐AlAs/n‐GaAs heterojunction (1989) (4)
- Photoemission spectroscopy of Al0.27Ga0.73As:As photodiodes (1993) (4)
- Conductance quantization and zero bias peak in a gated quantum wire (2005) (3)
- Experimental Demonstration of a Silicon Carbide (2001) (3)
- Measurements of absorption coefficient and refractive index changes without the Kramers-Kronig relation in photorefractive quantum wells of GaAs (2003) (3)
- Comment on ‘‘Mechanism responsible for the semi‐insulating properties of low‐temperature‐growth GaAs’’ [Appl. Phys. Lett. 65, 3002 (1994)] (1995) (3)
- Cryogenic operation of GaAs bipolar transistors with inverted base doping (1991) (3)
- Imaging Biological Tissue Using Photorefractive Holography and Fluorescence Lifetime (2001) (3)
- Transistor-based studies of heavy doping effects in n-GaAs (1991) (3)
- Effect of Al mole fraction on electron emission at the AlxGa1−xAs/GaAs interface (1989) (3)
- Hybrid GaAs/LiNbO3SAW Memory Correlator (1984) (3)
- Electrical characterization of GaAs PiN junction diodes grown in trenches by atomic layer epitaxy (1991) (3)
- Application of isothermal current deep level transient spectroscopy to solar cells (1989) (3)
- Characterization of planar antennas fabricated on GaAs epilayers containing As clusters for picosecond short-pulse applications (1993) (3)
- Is the ‘Finite Bias Anomaly’ in planar GaAs-superconductor junctions caused by point-contact-like structures? (1999) (3)
- Effective bandgap shrinkage in GaAs (2019) (3)
- Controlled diode profiling for GaAs strip-coupled correlators (1984) (3)
- Experimental measurement of bulk and edge generation in Al0.4Ga0.6As PiN structures (1991) (3)
- erratum: Subsurface charge accumulation imaging of a quantum Hall liquid (1998) (3)
- Vacancy diffusion kinetics in arsenic-rich nonstoichiometric AlAs/GaAs heterostructures (2000) (3)
- Effect of dopants on arsenic precipitation in GaAs deposited at low temperatures (1994) (3)
- Imaging the low compressibility strips formed by the quantum hall liquid in a smooth potential gradient (2000) (3)
- Room temperature dynamic memories for GaAs integrated circuits (1987) (3)
- Dark IV characterization of GaAs p/n heteroface cells (1987) (3)
- Sources of Spurious Signals in the Strip Coupled GaAs Memory Correlator (1983) (3)
- Enhanced Diffusion in Nonstoichiometric AlAs/GaAs Heterostructures (1998) (3)
- Whole-field coherent imaging through turbid media using photorefractive holography (2000) (2)
- DEVELOPMENT AND OPERATION OF BURIED CHANNEL CHARGE COUPLED DEVICES IN 6H SILICON CARBIDE (1996) (2)
- A 2DEG/low-temperature-grown GaAs dual channel heterostructure transistor (1995) (2)
- Conversion of Sezawa to Rayleigh Waves in the ZnO-SiO 2 -Si Configuration (1981) (2)
- Basic studies of 3-5 high efficiency cell components (1993) (2)
- Dynamic Charge Storage in 6H-Silicon Carbide: Prospects for High-Speed Nonvolatile RAM's (1992) (2)
- Analytic Framework for Students' Cognitive Mistakes in Studying Electromagnetic Fields (2016) (2)
- Metal-mirror-based resonant-cavity enhanced light-emitting diodes by the use of a tunnel diode contact (2001) (2)
- Ion-implanted p-n junction capacitors for GaAs DRAMs (1990) (2)
- A Novel Submillimeter-Wave Detector Using Quantum Point Contacts (1993) (2)
- Magnetic splitting of the zero-bias peak in a quantum point contact with a tunable aspect ratio (2009) (2)
- Development of a one transistor dynamic RAM for the AlGaAs/GaAs HIGFET technology (1986) (2)
- Transient dynamics during two-wave mixing in photorefractive quantum well diodes using moving gratings. (1998) (2)
- Experiments in Interrupted Growth Molecular Beam Epitaxy Technology (1988) (2)
- Physics and Applications of Metallic Arsenic Clusters in GaAs Based Layer Structures (1993) (2)
- Direct observation of micron-scale ordered structure in a two-dimensional electron system (2002) (2)
- ZINC OXIDE ON SILICON SURFACE ACOUSTIC WAVE DEVICES (1981) (2)
- Single-particle lifetime in quasi-one-dimensional systems (2000) (2)
- Time-of-Flight Measurements of Zero-Field Electron Diffusion in p+-GaAs (1990) (2)
- Photorefractive semiconductor nanostructures (2000) (2)
- Adaptive optical coherence-domain reflectometry using photorefractive quantum wells (2004) (2)
- Characterization Of Planar Antenna Fabricated An GaAs Epilayers Containing As Clusters For Picosecond Short-pulse Applications (1993) (2)
- Electrical Characterization of PiN Diode Structures in 6H-SiC (1992) (2)
- Quantitative study of spin-flip cotunneling transport in a quantum dot (2010) (2)
- Aharonov-Bohm oscillations due to quantum interference between parallel quantum wells (1986) (2)
- Time-gated holographic imaging using photorefractive multiple quantum well devices (1997) (2)
- Influence of the AlN buffer layer growth on AlGaN/GaN films deposited on (111)Si substrates (2000) (2)
- Low-temperature grown GaAs tunnel junctions (1997) (2)
- Experimental Demonstration of a Buried- Charge-Coup1e.d Device in 6H Silicon Car (1996) (2)
- Low Interface State Density at Pseudomorphic ZnSe/Epitaxial GaAs Interface (1989) (1)
- Real-time depth-resolved holographic imaging using photorefractive MQW devices (1996) (1)
- Novel Phenomena in Small Individual and Coupled Quantum Dots (2003) (1)
- VA-8 pseudomorphic ZnSe/GaAs MISFET devices (1987) (1)
- Generation and minority‐carrier leakage along GaAs surfaces (1994) (1)
- Laser-based ultrasound detection through turbid media (2002) (1)
- Photocollection efficiency of GaAs/AlAs/GaAs p+-i-n and n+-i-p photodiodes☆ (1987) (1)
- Photorefractive phase shift induced by hot electron transport: multiple quantum wells (1994) (1)
- 1997 IEEE International Symposium on Compound Semiconductors : proceedings of the IEEE Twenty-fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997 (1998) (1)
- High-density optical storage using arsenic nanoclusters in GaAs and AlGaAs (1992) (1)
- New III-V cell design approaches for very high efficiency (1993) (1)
- SIDEWALL GATED DOUBLE WELL QUASI-ONE-DIMENSIONAL RESONANT TUNNELING TRANSISTORS (1997) (1)
- Summary Abstract: Aharonov–Bohm effect in a molecular beam epitaxially grown double quantum well (1986) (1)
- Investigation of minority carrier retention behind AlAs barriers (1987) (1)
- High-speed 3D imaging using photorefractive holography (2001) (1)
- Measurement of bandgap narrowing effects in p-GaAs and implications for AlGaAs/GaAs HBT performance (1988) (1)
- Wide-field coherence gated imaging: photorefractive holography and wide-field coherent heterodyne imaging (2003) (1)
- Comment on arsenic precipitate coarsening in GaAs epilayers (1993) (1)
- Unexpected increase in the thermal generation rate of bulk GaAs due to electron-beam metallization (1993) (1)
- Phosporous and nitrogen implantation into 4H-SiC (1999) (1)
- High-speed 3D imaging using photorefractive holography with novel low-coherence interferometers (2001) (1)
- Spectral Holography For Dynamic Dispersion Compensation (1998) (1)
- A vertically integrated GaAs bipolar DRAM cell (1991) (1)
- High speed 3-D imaging using low coherence photorefractive holographic microscopy (2002) (1)
- A Universal De-embedding Procedure for the " On-Wafer " GHz Probing (2009) (1)
- Wide-band semiconductors for high-power, high-frequency and high-temperature applications -- 1999. Materials Research Society symposium proceedings: Volume 572 (1999) (1)
- Surface Wave Resonators on Silicon (1983) (1)
- Direct time–space conversion of ultra-fast pulses based on interferometric time-of-flight cross correlation using a fast optical addressable spatial light modulator (2001) (1)
- Low-coherence photorefractive holography for high-speed 3D imaging including through scattering media (2002) (1)
- Effects of bias and temperature on one-dimensional ballistic transport in a planar double-gate quantum wire transistor (1993) (1)
- Effects of heavy impurity doping on the np product in p-GaAs (1990) (1)
- Femtosecond pulse shaping by dynamic holographyin photorefractive multiple quantum wells (1997) (1)
- New III-V cell design approaches for very high efficiency. Annual subcontract report, 1 August 1991--31 July 1992 (1993) (1)
- An X-band silicon carbide IMPATT diode (2001) (1)
- Fabrication and transport study of finite lateral superlattices (1997) (1)
- Femtosecond carrier dynamics of low-temperature-grown GaAs observed via Terahertz spectroscopy (1997) (0)
- Shimmering holograms and cellular motion in osteogenic tumors (2003) (0)
- IIB-2 Effects of Single Impurity Scattering on One- Dimensional Quantum-Effect Devices-C. C. Eugster, (1992) (0)
- Photorefractive semiconductor quantym-wells and thin films (1993) (0)
- SAW Resonators on Silicon (1982) (0)
- Fabry-Perot Photorefractive Quantum Well Structures for Adaptive Processing. (1995) (0)
- Magnetic-Field-Induced Crossover to a Nonuniversal Regime in a (2009) (0)
- Compound semiconductors 1997 : proceedings of the Twenty-Fourth International Symposium on Compound Semiconductors held in San Diego, California, 8-11 September 1997 (1998) (0)
- Resonant Tunneling in Gated Vertical One- dimensional Structures (1997) (0)
- Quasi one-dimensional confinement in double-well sidewall gated resonant tunneling transistors (1998) (0)
- High transconductance n- and p-channel GaAs MESFETs using novel amphipolar Cu/sub 3/Ge ohmic contacts (1993) (0)
- Epitaxial GaN films on Si(111) with varied buffer layers (2000) (0)
- Exciton electroabsorption moments and sum rules (2000) (0)
- “Erratum: Ultranarrow AuPd and Al wires” [Appl. Phys. Lett. 86, 172501 (2005)] (2007) (0)
- A nanoscale ohmic contact for nanoelectronic devices (1999) (0)
- Defect and Impurity-Complex Depassivation During Electron-Beam Irradiation of GaAs (2021) (0)
- Novel picosecond optoelectronic tip design for ultrafast scanning tunneling microscopy (1995) (0)
- III-V nitrides and silicon carbide (1996) (0)
- AC Bias Spectroscopy of the Kondo Singlet in a Single Electron Transistor (2012) (0)
- Photoconductive sampling of picosecond transients (1996) (0)
- Fabrication of small nanowire (2001) (0)
- Arsenic Cluster Engineering. (1996) (0)
- Adaptive Compensation for Laser-based Ultrasound Detection Using Holographic Quantum Wells (1998) (0)
- The Photorefractive Properties of Quantum-Confined Excitons (1992) (0)
- Spatial Partition of Photocarriers Trapped at Deep Defects in Multiple Quantum Wells (1992) (0)
- Superparamagnetic behavior of Fe 3GaAs precipitates in GaAs (1997) (0)
- GaAs gate dynamic memory technology (1992) (0)
- Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications, MRS Symposium Proceedings Held in San Francisco on 5-8 April 1999. Volume 572 (1999) (0)
- Photorefractive multiple-quantum-well asymmetric Fabry-Perot (1994) (0)
- Chapter 12 – Photorefractive semiconductor nanostructures (2002) (0)
- Non-pixelated quantum well diode diffraction modulators (1995) (0)
- Enhanced student perceptions of learning and performance using concept-point-recovery teaching sessions: a mixed-method approach (2021) (0)
- Non-alloyed ohmic contact on GaAs at nanometer scale (1999) (0)
- Cathodoluminescence and Photoluminescence Spectroscopy Study of Low Temperature Molecular Beam Epitaxy GaAs (1991) (0)
- Time-gated holographic imaging using photorefractive media (1995) (0)
- Effects of Single Impurity Scattering on One-Dimensional Quantum-Effect Devices (1992) (0)
- Temperature Dependence of the Intervalley Deformation Potential of GaAs/AlAs Superlattices Under Hydrostatic Pressure (1997) (0)
- Optoelectronic properties of nonstoichiometric heterostructures (2000) (0)
- Magnetoconductance of a Single-Electron Transistor in the Kondo Regime (2011) (0)
- Formation of elemental Ag precipitates in AlGaAs by ion implantation and thermal annealing (1997) (0)
- Effects of confinement on electron-phonon coupling for the two-dimensional electron gas in a GaAs/AlGaAs quantum well (1996) (0)
- Correlation of femtosecond time-domain images by use of photorefractive holograms (1997) (0)
- Proceedings of the 1997 IEEE International Symposium on Compound Semiconductors (1997) Held in San Diego, California, on 8-11 September 1997 (1998) (0)
- The Electronic and Vibrational Spectra of (GaAs)_m/-(AlAs) m Short Period Superlattices. (1997) (0)
- STRIP COUPLED SCEOlTKY DIODE HEM)RY CORRELATOB ON SEIU-INSULATING &AB (1982) (0)
- Carrier Relaxation Dynamics in Low-Temperature-Grown GaAs Thin Films via Transient Terahertz Spectroscopy. (1998) (0)
- Enhanced non steady photo-electromotive force in p-i-n structures (2003) (0)
- Design and fabrication of resonant cavity enhanced light-emitting diodes using a tunnel diode contact (2000) (0)
- GaAs epilayers containing arsenic clusters: A metal/semiconductor composite (1993) (0)
- Ju n 20 02 Tunneling images of a 2 D electron system in a quantizingmagnetic field (2002) (0)
- Photorefractive holography using spatially incoherent sources (1999) (0)
- Femtosecond Pulse Distortion by Diffraction from Semi-insulating Multiple Quantum Wells (1996) (0)
- GaAs Sses the light (1991) (0)
- Radiative recombination and photon recycling in gallium arsenide solar cells (2008) (0)
- Basic Studies of III-IV High Efficiency Cell Components (2018) (0)
- Diffractive quantum-well Fabry-Perot transmission and reflection modulators (1994) (0)
- Approved by Major Professor(s): Approved by Head of Graduate Program: Date of Graduate Program Head's Approval: Jung-Ho Chung Two-Photon Absorption in Semiconductors for Coherent Control of Photocurrent Ratios And Femtosecond Pulse Characterization Doctor of Philosophy (2005) (0)
- Designing a Broad-Area Optically-Pumped Holographic Vertical Cavity Surface Emitting Laser (HVCSEL) (2001) (0)
- Photorefractive holography for real-time coherence gated imaging (2003) (0)
- Experimentally verified conduction model for a low-resistance non-alloyed ohmic contact utilizing low-temperature-grown GaAas (1999) (0)
- Nonlinear Optics of Quantum Anti-Dots in Bulk GaAs (1992) (0)
- Narrow-Linewidth Interwell THz Intersubband Emission (2000) (0)
- Semimetal/semiconductor composites for optoelectronic applications (1994) (0)
- Investigation of Short Period GaAs/AlAs Superlattice by Photoluminescence Spectroscopy under Hydrostatic Pressure (1997) (0)
- Real-time 3-D imaging using structured illumination and photorefractive holography, including with fluorescence (2001) (0)
- Simultaneous Measurement of Absorption and Phase Gratings in GaAs Photorefractive Quantum Wells (2001) (0)
- Special issue on III-IV nitrides and silicon carbide (2000) (0)
- Sharp quantum-confined exciton spectra and electroabsorption in low-temperature-growth AlAs/GaAs multiple quantum wells (1995) (0)
- Superconducting ultra narrow Al nanowires (2005) (0)
- Optimizing Two-WaveMixing Efficiency in Photorefractive QuantumWells bySelective Angle Tuning (2005) (0)
- Optimizing two-wave mixing efficiency in photorefractive quantum wells by selective angle tuning (2005) (0)
- The dependence of effective channel width of quasi-one-dimensional split-gate devices on carrier density (2000) (0)
- Imaging of Subsurface Tunneling into a 2D Electron System (2000) (0)
- Degenerate four-wave mixing in an optically-pumped holographic vertical cavity surface emitting laser (HVCSEL) (2003) (0)
- Tunneling images of a 2D electron system in a quantizing magnetic field (2002) (0)
- Volume reflection gratings in photorefractive quantum well thin films (1996) (0)
- Self-assembly based approaches for metal/molecule/semiconductor nanoelectronic circuits (1999) (0)
- Transient-Enhanced Diffusion and Interface Intermixing in Nonstoichiometric AlAs/GaAs Superlattices (1998) (0)
- Non-linear Current-Voltage Dependence of the Superconducting Transition in 1-D Ultranarrow Al wires (2005) (0)
- Correlation of material properties and recombination losses in Al0.2Ga0.8As solar cells (1989) (0)
- High-resolution real-time three-dimensional imaging through turbid media using photorefractive holography (1998) (0)
- Laser-based ultrasound with linear detection in photorefractive multiple quantum wells (1998) (0)
- Molecular Beam Epitaxy of ZnSe on GaAs Epilayers for Use in MIS Devices (1988) (0)
- Basic STudies of III-V High Efficiency Cell Components, Annual Subcontract Report, 15 August 1989 - 14 August 1990 (1993) (0)
- Photo-Hall Characterization of Semiconductor Matrices with Disordered Particulates (2001) (0)
- Nanotechnology Summer Undergraduate Research Intern Program: Comprehensive Introduction to Life as a Researcher (2004) (0)
- Thin crystalline LEDs and solar cells using epitaxial lift‐off (2008) (0)
- Basic Studies Annual Subcontr 15 August 1989 - (2008) (0)
- Tunable Intersubband THz Emission in Multiple Quantum Wells (1998) (0)
- A vertically integrated GaAs bipolar/FET DRAM cell with internal gain (1992) (0)
- Beam Control in Diffractive Short-Cavity Quantum Wells Fabry-Perots for Adaptive Processing. (1997) (0)
- New III-V cell design approaches for very high efficiency. Annual subcontract report, 1 August 1990--31 July 1991 (1993) (0)
- Double-crystal x-ray rocking curve study of (Al,Ga)As:As grown by low temperature molecular beam epitaxy (1997) (0)
- Holographic Processing of High-Speed Lightwave Signals for the Time-Division Multiplexing. (1997) (0)
- Scanning Probe Microscope (2001) (0)
- Real-time Three-dimensional Imaging Through Turbid Media Using Photorefractive Multiple Quantum Well Devices (1997) (0)
- r Length Model for Contact o-Layer Systems with A ayer Coupling Under the ta (1996) (0)
- Defense Technical Information Center Compilation Part Notice ADP 015075 TITLE : Inversion Channel MOSFETs in 3 CSiC on Silicon (0)
- Transit time and light absorption effects in ITG-GaAs and applications to MSM-photodectors (1999) (0)
- Reflection Geometry Photorefractive Asymmetric Fabry-Perot Multiple Quantum Well Devices (2001) (0)
- 1D to 1D tunneling in a dual electron waveguide device (1993) (0)
- Time Domain Capacitance Spectrocopy of a 2DEG (1996) (0)
- Time-gated holographic imaging using photorefractive media (1998) (0)
- High-density holographic storage based on nanometer-size arsenic clusters in GaAs (1992) (0)
- Semi-insulating Multiple Quantum Wells As An Optical Imaging Medium (1991) (0)
- Temporally and spatially incoherent holography using photorefractive multiple quantum well devices (1999) (0)
- Electrical Characterization of NlPlN Structuresin 6H-Sic (1992) (0)
- Periodically excited photo-EMF signals in GaAs multiple quantum wells (2000) (0)
- Hot-electron mechanism for a de photorefractive phase shift (1993) (0)
- Photorefractive Gain in Stark-Geometry Quantum Wells Induced by Moving Gratings (1996) (0)
- Dynamic compensation of dispersion and time-drift of femtosecond pulses by use of spectral holography (1998) (0)
- InAs bipolar transistors: a path to high-performance cryogenic electronics (1993) (0)
- Optoelectronic Applications Of GaAs Epilayers Containing Arsenic Precipitates (1991) (0)
- Electrical Characterization of NIPIN Structures in 6H-Sic (1992) (0)
- Mobility of Carriers in LTG-GaAs : GaAs epilayers (0)
- Comparison of terahertz waveforms measured by EO-sampling and a photoconductive dipole antenna (1998) (0)
- Ultrafast lifetime engineering in metal/ semiconductor composites (1994) (0)
- Oscillatory mode coupling from strobed gratings in photorefractive quantum well diodes (1997) (0)
- Investigation of Novel Devices in Wide Bandgap Semiconductors. (1995) (0)
- Surface-Free Photo-EMF Adaptive Photoreceivers with Integrated Co-Planar Contacts (2001) (0)
- Double Quantum Dot Molecule Coupled with Single-Electron Transistors for Quantum Computation Applications (2006) (0)
- High speed 3-D imaging through turbid media using photorefractive MQW devices (2001) (0)
- Proceedings of the Symposium on III-V Nitrides and Silicon (1996) (0)
- Thermopower study in a double bend quantum structure (2002) (0)
- Low-bias Transport Features in a Quantum Point Contact with a Variable Aspect Ratio (2009) (0)
- Dielectric Properties of Ordered and Disordered Particulates in Semiconductor Matrices (1999) (0)
- Coherence-gated ultrasound detection through turbid medium (2001) (0)
- Millimeter-wave, Terahertz, and infrared devices (1997) (0)
- Diffraction property of ultrashort laser pulses in photorefractive multiple quantum wells (2000) (0)
- Photorefractive Holography With Multiple Quantum Well Devices Using Light Emitting Diodes (1999) (0)
- Magnetic and Magnetoresistance measurements on Fe_3GaAs Precipitates in GaAs (1996) (0)
- Non-linear conductance of a short quantum point contact (2008) (0)
- Depth-resolved holography using photorefractive media (1996) (0)
- Cluster Engineering for Photoconductive Switches (1995) (0)
- Mid-Infrared Quantum Cascade Lasers (1998) (0)
- High resolution real time 3D imaging through turbid media using photorefractive holography (1998) (0)
- Defense Technical Information Center Compilation Part Notice ADPO 117 31 TITLE : Narrow-Linewidth Interwell THz Intersubband Emission (0)
- Zero bias conductance peak in a gated quantum wire (2005) (0)
- Low Temperature Grown and Highly Non-Stoichiometric GaAs and Related Materials (1994) (0)
- Characterization of terahertz optoelectronic behavior of GaAs epilayers containing arsenic precipitates (1992) (0)
- Dynamic Response of the Kondo Resonance in a Single-Electron Transistor in the Presence of Magnetic Field (2011) (0)
- Shimmering holograms and the measure of life in optical coherence imaging of tumor spheroids (2003) (0)
- Anomalous Diffusion in Low-temperature-grown AlAs/GaAs Heterostructures (1996) (0)
- Quantitative Study of Spin-flip Co-tunneling Transport in a Quantum (2015) (0)
- Real Space Transfer Between Two Semiconductor Channels Connected in Parallel (1997) (0)
- Dynamic properties of the Kondo state: proposal for an investigation of the linear response (2016) (0)
- What worked for the engineering students to learn? Students’ learning experiences through concept-point-recovery (2022) (0)
- High frequency ZnO-SiO2-Si surface acoustic wave convolvers (1981) (0)
- Non-Monotonic Dynamic Conductance in the Spin-1/2 Kondo Regime in a Single-Electron Transistor (2013) (0)
- onstration of npn InAs nsistors wi Inverted Base Dopi (1996) (0)
- Enhancement of narrow-band terahertz radiation from large aperture photoconductors through multiple pulse excitation (1999) (0)
- Ultrafast scanning tunneling microscopy using integrated optoelectronic switches (1995) (0)
- GaAs see the light (photodetectors) (1991) (0)
- Demonstration of a velocity modulated transistor (1997) (0)
- Silicon Carbide Power Devices (2000) (0)
- High-resolution real-time 3D imaging using time-gated photorefractive holography (1998) (0)
- Frequency Regimes of Kondo Dynamics in a Single-Electron Transistor (2013) (0)
- Special Issue Papers on III-V Nitride and SiC Materials and Devices (2000) (0)
- Homodyne Detection of Ultrasound Through Turbid Media Using an Adaptive Interferometer (2001) (0)
- Purdue University Graduate School Thesis/dissertation Acceptance Amritanshu Palaria Multi-scale Predictive Modeling of Nano-material and Realistic Electron Devices Doctor of Philosophy Multi-scale Predictive Modeling of Nano-material and Realistic Electron Devices Doctor of Philosophy Multi-scale Pr (2010) (0)
- Photo-EMF Effect under the Influence of Nonlinear Hot-Electron Transport in Photorefractive Quantum Wells Diodes (2001) (0)
- Very low resistance non-alloyed ohmic contacts using as-rich GaAs (1994) (0)
- Photoconductive sampling with a scanning tunneling microscope (1998) (0)
- Sidewall Gated Resonant Tunneling Diodes for Low-Dimensional Device Studies (1996) (0)
- Quantum Phase Trasition in Parallel-Coupled Double-Quantum-Dots (2003) (0)
- Observation of the transition from the near-field to the far-field region for broadband terahertz radiation (1999) (0)
- Photoinduced Space-Charge Gratings in Semi-Insulating Multiple Quantum Wells (1992) (0)
- Ultrahigh photorefractive sensitivity in AlGaAs/GaAs MQWs (1992) (0)
- Resolving the Disorder of a Two-Dimensional Electron System using Charge Accumulation Imaging (2001) (0)
- High-power narrow-band terahertz generation using multiple-pulse excitation of photoconductive antennas (1999) (0)
- Electro-optic Properties of Long-Period Fibonacci Superlattices (1996) (0)
- A Vertically-Integrated Gaas Bipolar Dram Cell (1991) (0)
- Detection of Brain Abnormalities in Football Players Through Diffusion Weighted Imaging (2014) (0)
- Temperature dependence of minority hole mobility in n+-GaAs measured with a new variable temperature technique (1994) (0)
- Free-Carrier Grating Diffraction from Quantum Well Fabry-Perots (1998) (0)
- Dielectric Response of a Quantum Dot Measured with an Aluminum Single Electron Transistor (1997) (0)
- Robust IR gratings in photorefractive quantum wells (1991) (0)
- High-efficiency photorefractive p-i-n quantum well diodes (1996) (0)
- Broadband Microwave Noise Characterization of Resonant Tunneling Diodes (1996) (0)
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What Schools Are Affiliated With Michael R. Melloch?
Michael R. Melloch is affiliated with the following schools: