Michael Shur
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Most Influential Person Now
American physicist
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Physics
Michael Shur's Degrees
- PhD Physics Stanford University
- Masters Physics Stanford University
- Bachelors Physics Stanford University
Why Is Michael Shur Influential?
(Suggest an Edit or Addition)According to Wikipedia, Michael Shur is a Russian and American physicist and a professor of solid state electronics and electrical engineering at Rensselaer Polytechnic Institute. Background Shur was born on November 13, 1942, in Kamensk-Uralsky, Sverdlovsk, USSR. He received his master's degree in Electrical Engineering from St. Petersburg Electrotechnical Institute. In 1967 he received his Ph.D. in physics from the A.F. Ioffe Institute in Petersburg, Russia. In 1993, he received Dr. Sc. degree from A.F. Ioffe Institute.
Michael Shur's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe (2001) (1549)
- Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid (1996) (917)
- Handbook Series on Semiconductor Parameters (1996) (898)
- Gaas Devices And Circuits (1987) (544)
- Sensitive skin (2000) (537)
- Transient electron transport in wurtzite GaN, InN, and AlN (1999) (513)
- Physics of Semiconductor Devices (1969) (464)
- Solid-State Lighting: Toward Superior Illumination (2005) (436)
- An experimental study of contact effects in organic thin film transistors (2006) (426)
- Physics of amorphous silicon based alloy field‐effect transistors (1984) (383)
- Nonresonant Detection of Terahertz Radiation in Field Effect Transistors (2002) (369)
- Plasma wave electronics: novel terahertz devices using two dimensional electron fluid (1996) (366)
- Introduction to Solid-State Lighting (2002) (365)
- Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide (1991) (365)
- AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor (2000) (360)
- AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10% (2012) (359)
- Selective gas sensing with a single pristine graphene transistor. (2012) (348)
- Threshold Switching in Chalcogenide-Glass Thin Films (1980) (342)
- Microwave performance of a 0.25 m gate AlGaN/GaN heterostructure field effect transistor (1994) (332)
- Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power (2006) (332)
- AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates (2000) (327)
- Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors (2004) (307)
- Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors (2004) (305)
- Contact resistance extraction in pentacene thin film transistors (2003) (301)
- Monte Carlo calculation of velocity-field characteristics of wurtzite GaN (1997) (298)
- Modeling of organic thin film transistors of different designs (2000) (296)
- Electron transport in wurtzite indium nitride (1998) (272)
- Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors (2002) (270)
- Monte Carlo simulation of electron transport in gallium nitride (1993) (258)
- Self-heating in high-power AlGaN-GaN HFETs (1998) (252)
- Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices (1997) (251)
- Ballistic transport in semiconductor at low temperatures for low-power high-speed logic (1979) (251)
- Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C (1995) (246)
- GaN based transistors for high power applications (1998) (245)
- Deep-Ultraviolet Light-Emitting Diodes (2010) (243)
- Low ballistic mobility in submicron HEMTs (2002) (239)
- Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors (2001) (238)
- The influence of the strain‐induced electric field on the charge distribution in GaN‐AlN‐GaN structure (1993) (228)
- Semiconductor Device Modeling For VLSI (1993) (221)
- Physics of amorphous silicon alloy p‐i‐n solar cells (1985) (207)
- Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor (2002) (199)
- Conducting laboratory experiments over the Internet (1999) (195)
- Model for modulation doped field effect transistor (1982) (195)
- Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN (1996) (194)
- High-temperature performance of AlGaN/GaN HFETs on SiC substrates (1997) (192)
- Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates (1998) (190)
- Detection of terahertz radiation in gated two-dimensional structures governed by dc current (2006) (188)
- A new analytic model for amorphous silicon thin‐film transistors (1989) (183)
- Influence of nonuniform field distribution on frequency limits of GaAs field-effect transistors (1976) (179)
- Piezoresistive effect in wurtzite n‐type GaN (1996) (176)
- SPICE Models for Amorphous Silicon and Polysilicon Thin Film Transistors (1997) (173)
- Comparison of high field electron transport in GaN and GaAs (1997) (171)
- Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias (1994) (169)
- Introduction to Device Modeling and Circuit Simulation (1997) (166)
- Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors (1996) (166)
- Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate (2000) (165)
- Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors (1996) (164)
- Current—Voltage and capacitance—Voltage characteristics of modulation-doped field-effect transistors (1983) (164)
- An investigation of the effect of graded layers and tunneling on the performance of AlGaAs/GaAs heterojunction bipolar transistors (1984) (160)
- Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor (2005) (156)
- Threshold voltage, field effect mobility, and gate-to-channel capacitance in polysilicon TFTs (1996) (153)
- Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFETs (1993) (150)
- High power AlGaN ultraviolet light emitters (2014) (147)
- Handbook Series on Semiconductor Parameters, Vol. 2: Ternary and Quaternary Iii-V Compounds (1999) (146)
- Electron mobility in modulation-doped AlGaN-GaN heterostructures (1999) (146)
- Optimization of white polychromatic semiconductor lamps (2002) (146)
- DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs (1989) (142)
- Introduction to electronic devices (1995) (141)
- Low field mobility of 2‐d electron gas in modulation doped AlxGa1−xAs/GaAs layers (1983) (140)
- Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells (2002) (139)
- Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms (2010) (137)
- GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors (1997) (136)
- Lattice and energy band engineering in AlInGaN/GaN heterostructures (2000) (136)
- THz spectroscopic investigation of 2,4-dinitrotoluene (2004) (133)
- Steady-State and Transient Electron Transport Within the III–V Nitride Semiconductors, GaN, AlN, and InN: A Review (2006) (133)
- Terahertz detector utilizing two-dimensional electronic fluid (1998) (131)
- Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors (2003) (131)
- Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures (2010) (129)
- Electron density of the two‐dimensional electron gas in modulation doped layers (1983) (128)
- Deep ultraviolet light‐emitting diodes (2006) (122)
- A short-channel DC SPICE model for polysilicon thin-film transistors including temperature effects (1999) (121)
- Terahertz detection by high-electron-mobility transistor: Enhancement by drain bias (2001) (118)
- Current instability and plasma waves generation in ungated two-dimensional electron layers (2005) (114)
- High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates (2000) (113)
- CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz (1996) (112)
- Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices (2014) (112)
- AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor (2001) (111)
- Flicker Noise in Bilayer Graphene Transistors (2008) (111)
- Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors (2001) (110)
- Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency (1996) (108)
- Origin of 1/f noise in graphene multilayers: Surface vs. volume (2012) (106)
- AlGaN Deep-Ultraviolet Light-Emitting Diodes (2005) (105)
- SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors (2000) (105)
- AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA (2004) (104)
- Polar optical-phonon scattering in three- and two-dimensional electron gases (1995) (101)
- Terahertz detection by GaN/AlGaN transistors (2006) (100)
- Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor (2005) (97)
- Low-noise top-gate graphene transistors (2009) (97)
- 7.5 kW/mm 2 Current Swith using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates (2000) (96)
- Plasmonic terahertz lasing in an array of graphene nanocavities (2012) (96)
- High transconductance heterostructure field‐effect transistors based on AlGaN/GaN (1996) (96)
- Terahertz lasers based on optically pumped multiple graphene structures with slot-line and dielectric waveguides (2010) (96)
- SiO/sub 2//AlGaN/InGaN/GaN MOSDHFETs (2002) (96)
- Near-band-edge photoluminescence of wurtzite-type AlN (2002) (95)
- Field-plate engineering for HFETs (2005) (95)
- Potential performance of indium-nitride-based devices (2006) (94)
- Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power (2010) (94)
- AlGaN/GaN high electron mobility field effect transistors with low 1/f noise (1998) (92)
- Suppression of 1/f noise in near-ballistic h-BN-graphene-h-BN heterostructure field-effect transistors (2015) (90)
- Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts (2014) (90)
- Ultraviolet Light-Emitting Diodes at 340 nm using Quaternary AlInGaN Multiple Quantum Wells (2001) (89)
- Resting metabolic rate in obese, premenopausal black women. (1997) (88)
- Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis (2005) (88)
- Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes (2008) (87)
- Current‐voltage characteristics of strained piezoelectric structures (1995) (87)
- Mechanism of Radio-Frequency Current Collapse in GaN-AlGaN Field-Effect Transistors (2001) (87)
- GaN-AlGaN Heterostructure Field-Effect Transistors over Bulk GaN Substrates (2000) (86)
- Enhanced Luminescence in InGaN Multiple Quantum Wells with Quaternary AlInGaN Barriers (2000) (86)
- TEMPERATURE DEPENDENCE OF IMPACT IONIZATION IN ALGAN-GAN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (1998) (84)
- Unified MOSFET model (1992) (84)
- Si, Ge, C (Diamond), GaAs, GaP, GaSb, InAs, InP, InSb (1996) (84)
- High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor (1998) (83)
- Terahertz sources and detectors using two-dimensional electronic fluid in high electron-mobility transistors (2000) (83)
- Unified charge control model and subthreshold current in heterostructure field-effect transistors (1990) (83)
- Source, drain, and gate series resistances and electron saturation velocity in ion-implanted GaAs FET's (1985) (83)
- Indium-Silicon Co-Doping of High-Aluminum-Content AlGaN for Solar Blind Photodetectors (2001) (83)
- Terahertz Plasmonics: Good Results and Great Expectations (2014) (83)
- HALL MEASUREMENTS AND CONTACT RESISTANCE IN DOPED GAN/ALGAN HETEROSTRUCTURES (1996) (83)
- Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridging (2001) (82)
- Double graphene-layer plasma resonances terahertz detector (2012) (82)
- Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes (1997) (82)
- Spectroscopic characterization of explosives in the far-infrared region (2004) (81)
- Near ballistic electron transport in GaAs devices at 77°K (1981) (81)
- Parasitic MESFET in (Al, Ga) As/GaAs modulation doped FET's and MODFET characterization (1984) (80)
- Resonant excitation of plasma oscillations in a partially gated two-dimensional electron layer (2005) (80)
- Nanometer size field effect transistors for terahertz detectors (2013) (80)
- Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping (2003) (80)
- Photoconductivity and recombination in amorphous silicon alloys (1984) (79)
- Gated photodetector based on GaN/AlGaN heterostructure field effect transistor (1995) (79)
- Terahertz technology: devices and applications (2005) (78)
- Submicron gate Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors (2003) (77)
- Scattering rates for holes near the valence-band edge in semiconductors (1990) (77)
- GaN-based materials and devices : growth, fabrication, characterization and performance (2004) (77)
- A unified current-voltage model for long-channel nMOSFETs (1991) (76)
- Terahertz science and technology for military and security applications (2007) (76)
- AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN (2003) (75)
- Comparative numerical testing of one- and two-equation turbulence models for flows with separation and reattachment (1995) (75)
- Low-Frequency 1/f Noise in Molybdenum Disulfide Transistors (2013) (75)
- Bias dependence and light sensitivity of (Al, Ga)As/GaAs MODFET's at 77 K (1983) (75)
- AlGaN single-quantum-well light-emitting diodes with emission at 285 nm (2002) (75)
- Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications (2003) (75)
- Transition from capacitive coupling to direct charge transfer in asymmetric terahertz plasmonic assemblies. (2016) (74)
- Pulsed atomic layer epitaxy of quaternary AlInGaN layers (2001) (74)
- Spectral optimization of phosphor-conversion light-emitting diodes for ultimate color rendering (2008) (74)
- Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors (2004) (74)
- Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface (1997) (74)
- ZnO nanoparticle surface acoustic wave UV sensor (2010) (73)
- GaN based heterostructure for high power devices (1997) (73)
- Two‐dimensional electron gas in GaN–AlGaN heterostructures deposited using trimethylamine‐alane as the aluminum source in low pressure metalorganic chemical vapor deposition (1995) (73)
- The influence of the deformation on the two-dimensional electron gas density in GaN–AlGaN heterostructures (1998) (72)
- Reduction of 1/f noise in graphene after electron-beam irradiation (2012) (72)
- TEMPERATURE DEPENDENCE OF THE I-V CHARACTERISTICS OF MODULATION-DOPED FETs. (1983) (72)
- Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors (2005) (72)
- Self-heating and kink effects in a-Si:H thin film transistors (2000) (71)
- High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells (2000) (71)
- Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN (2002) (71)
- Monte Carlo simulation of electron transport in wurtzite aluminum nitride (1998) (70)
- Visible–blind photoresponse of GaN-based surface acoustic wave oscillator (2002) (70)
- Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors (2000) (70)
- Systemic resistance to the antilipolytic effect of insulin in black and white women with visceral obesity. (1999) (70)
- 0.12-μm gate III-V nitride HFET's with high contact resistances (1997) (70)
- Surface acoustic wave velocity in single-crystal AlN substrates (2006) (70)
- Theoretical modeling of amorphous silicon‐based alloy p‐i‐n solar cells (1983) (69)
- Millimeter wave emission from GaN high electron mobility transistor (2004) (68)
- A novel Schottky/2-DEG diode for millimeter- and submillimeter-wave multiplier applications (1992) (68)
- Efficiency of light emission in high aluminum content AlGaN quantum wells (2009) (68)
- Electromechanical coupling coefficient for surface acoustic waves in single-crystal bulk aluminum nitride (2004) (67)
- Analytical model of GaAs MESFET's (1978) (67)
- Universal compact model for long- and short-channel Thin-Film Transistors (2008) (67)
- Plasma and transit-time mechanisms of the terahertz radiation detection in high-electron-mobility transistors (2003) (66)
- Low-Frequency Electronic Noise in Quasi-1D TaSe3 van der Waals Nanowires. (2016) (66)
- A new and simple model for GaAs heterojunction FET gate characteristics (1988) (66)
- RESURF AlGaN/GaN HEMT for high voltage power switching (2001) (65)
- Terahertz photomixing in quantum well structures using resonant excitation of plasma oscillations (2002) (65)
- Device loading effects on nonresonant detection of terahertz radiation by silicon MOSFETs (2007) (65)
- Approximate analytical solution of generalized diode equation (1991) (64)
- Theory of junction between two-dimensional electron gas and p-type semiconductor (1992) (64)
- 1/f noise in pentacene organic thin film transistors (2000) (64)
- Plasmonic and bolometric terahertz detection by graphene field-effect transistor (2013) (63)
- Unified model for short-channel poly-Si TFTs (1999) (62)
- Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors (2001) (62)
- Pyroelectricity in gallium nitride thin films (1996) (62)
- Graphene thickness-graded transistors with reduced electronic noise (2011) (62)
- Citrate-capped gold nanoparticle electrophoretic heat production in response to a time-varying radiofrequency electric-field. (2012) (61)
- High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition (2004) (61)
- Analytical models of ion-implanted GaAs FET's (1985) (61)
- Strain and charge distribution in GaN‐AlN‐GaN semiconductor‐insulator‐semiconductor structure for arbitrary growth orientation (1993) (61)
- Low-frequency current fluctuations in "graphene-like" exfoliated thin-films of bismuth selenide topological insulators. (2011) (60)
- Characteristics of a terahertz photomixer based on a high-electron mobility transistor structure with optical input through the ungated regions (2004) (60)
- Statistical approach to color quality of solid-state lamps (2009) (59)
- Selective Sensing of Individual Gases Using Graphene Devices (2013) (59)
- Selective Gas Sensing With $h$ -BN Capped MoS2 Heterostructure Thin-Film Transistors (2015) (59)
- Plasma oscillations in high-electron-mobility transistors with recessed gate (2006) (59)
- Plasma mechanism of terahertz photomixing in high-electron mobility transistor under interband photoexcitation (2002) (59)
- Plasma Wave Electronics (2003) (58)
- Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz (2015) (57)
- Accumulation Hole Layer in p-GaN/AlGaN Heterostructures (2000) (57)
- Breakdown current density in h-BN-capped quasi-1D TaSe3 metallic nanowires: prospects of interconnect applications. (2016) (56)
- Elastic strain relaxation in GaNAlNGaN semiconductorinsulatorsemiconductor structures (1995) (56)
- Piezoelectric doping and elastic strain relaxation in AlGaN–GaN heterostructure field effect transistors (1998) (56)
- UV solid-state light emitters and detectors (2004) (56)
- Plasmonic terahertz detector response at high intensities (2012) (55)
- High current-induced degradation of AlGaN ultraviolet light emitting diodes (2011) (54)
- 10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes (2004) (54)
- New high field‐effect mobility regimes of amorphous silicon alloy thin‐film transistor operation (1986) (54)
- Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors (1997) (54)
- Internal quantum efficiency in AlGaN with strong carrier localization (2012) (53)
- HIGHER-ORDER PLASMON RESONANCES IN GAN-BASED FIELD-EFFECT TRANSISTOR ARRAYS (2007) (52)
- Dynamic effects in double graphene-layer structures with inter-layer resonant-tunnelling negative conductivity (2013) (51)
- Ballistic electron motion in GaAs at room temperature (1980) (51)
- AlGaN-GaN heterostructure FETs with offset gate design (1997) (50)
- Terahertz photomixing using plasma resonances in double-graphene layer structures (2013) (50)
- Enhanced Plasma Wave Detection of Terahertz Radiation Using Multiple High Electron-Mobility Transistors Connected in Series (2010) (50)
- Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy (2011) (50)
- The relation between the critical exponents of percolation theory (1975) (50)
- Current-induced terahertz oscillations in plasmonic crystal (2012) (49)
- PIEZOELECTRIC DOPING IN ALINGAN/GAN HETEROSTRUCTURES (1999) (49)
- Effect of plasma resonances on dynamic characteristics of double graphene-layer optical modulator (2012) (48)
- Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications (1999) (48)
- Generation-recombination noise in GaN/AlGaN heterostructure field effect transistors (2001) (48)
- A new interpretation of "End" resistance measurements (1984) (48)
- Low-frequency noise in AlGaN'GaN heterojunction field effect transistors on SiC and sapphire substrates (2000) (48)
- A capacitance model for GaAs MESFET's (1985) (48)
- Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures (2002) (47)
- Closing the Gap: Plasma Wave Electronic Terahertz Detectors (2007) (47)
- Time-Resolved Electroluminescence of AlGaN-Based Light-Emitting Diodes with Emission at 285 nm (2003) (47)
- Amplification and lasing of terahertz radiation by plasmons in graphene with a planar distributed Bragg resonator (2013) (47)
- Low Frequency Noise in GaN Metal Semiconductor and Metal Oxide Semiconductor Field Effect Transistors (2001) (46)
- Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperatures (2009) (46)
- Fast-response surface acoustic wave humidity sensor based on hematoporphyrin film (2009) (46)
- Simulation of gate lag and current collapse in gallium nitride field-effect transistors (2004) (46)
- Field effect transistor as ultrafast detector of modulated terahertz radiation (2008) (46)
- Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices (2001) (45)
- Highly Doped Thin-Channel GaN-Metal-Semiconductor Field-Effect Transistors (2001) (45)
- Dynamic current-voltage characteristics of III-N HFETs (2003) (45)
- Microwave performance of 0.25μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures (1997) (45)
- Solid-state lamps with optimized color saturation ability. (2010) (45)
- Colour-rendition properties of solid-state lamps (2010) (45)
- Graphene terahertz uncooled bolometers (2012) (45)
- An ultra-stable non-coherent light source for optical measurements in neuroscience and cell physiology (2005) (44)
- Gate-voltage dependence of source and drain series resistances and effective gate length in GaAs MESFETs (1988) (44)
- Optical bandgap formation in AlInGaN alloys (2000) (44)
- Cultural Preferences to Color Quality of Illumination of Different Artwork Objects Revealed by a Color Rendition Engine (2013) (44)
- Substrate current in GaAs MESFET's (1979) (44)
- New continuous heterostructure field-effect-transistor model and unified parameter extraction technique (1990) (44)
- Density of Deep Bandgap States in Amorphous Silicon From the Temperature Dependence of Thin Film Transistor Current (1994) (44)
- Field effect transistor as heterodyne terahertz detector (2008) (44)
- Terahertz response of field-effect transistors in saturation regime (2010) (44)
- Physical models for amorphous-silicon thin-film transistors and their implementation in a circuit simulation program (1989) (44)
- GaN-based electronic devices (1999) (43)
- Breakdown walkout in AlAs/GaAs HEMTs (1992) (43)
- Terahertz sensing technology (2009) (43)
- Realization of n-channel and p-channel high-mobility (Al,GA)As/GaAs heterostructure insulating gate FET's on a planar wafer surface (1985) (42)
- Band-edge luminescence in quaternary AlInGaN light-emitting diodes (2001) (42)
- Transformation of the plasmon spectrum in a grating-gate transistor structure with spatially modulated two-dimensional electron channel (2010) (42)
- Avalanche breakdown and breakdown luminescence in p-/spl pi/-n GaN diodes (1998) (42)
- Conductance of small semiconductor devices (1981) (42)
- Color rendition engine. (2012) (42)
- Ballistic transport in a semiconductor with collisions (1981) (41)
- Degradation of AlGaN-based ultraviolet light emitting diodes (2008) (41)
- GaN And Related Materials For High Power Applications (1997) (41)
- Current and optical noise of GaN/AlGaN light emitting diodes (2006) (41)
- Correlation between carrier localization and efficiency droop in AlGaN epilayers (2013) (41)
- GaN-based SAW delay-line oscillator (2001) (40)
- Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs (2005) (40)
- Inverted GaAs/AlGaAs modulation-doped field-effect transistors with extremely high transconductances (1986) (40)
- Detection of microwave radiation by electronic fluid in high electron mobility transistors (1996) (40)
- A tunneling emitter bipolar transistor (1986) (40)
- Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes (2001) (40)
- Enhanced GaAs MESFET CAD model for a wide range of temperatures (1995) (39)
- Temperature coefficient of SAW frequency in single crystal bulk AlN (2003) (39)
- Compact Model of Current Collapse in Heterostructure Field-Effect Transistors (2007) (39)
- THz diffuse reflectance spectra of selected explosives and related compounds (2005) (39)
- The cyclotron resonance effective mass of two-dimensional electrons confined at the GaN/AlGaN interface (1996) (39)
- Progress in GaN Performances and Reliability (2007) (38)
- Two dimensional electronic flute (1995) (38)
- Low-frequency noise in GaN/GaAlN heterojunctions (1998) (38)
- Plasma wave terahertz electronics (2008) (38)
- Low frequency noise and long-term stability of noncoherent light sources (2004) (38)
- Analytical HFET $I$ – $V$ Model in Presence of Current Collapse (2008) (38)
- Analytical models for amorphous‐silicon and polysilicon thin‐film transistors for high‐definition‐display technology (1995) (38)
- Performance limits for field effect transistors as terahertz detectors (2013) (37)
- Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals (2002) (37)
- Large Chip High Power Deep Ultraviolet Light-Emitting Diodes (2010) (37)
- Analytical models of GaAs FET's (1985) (37)
- Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors with very high transconductance (1988) (37)
- Tuning of ungated plasmons by a gate in the field-effect transistor with two-dimensional electron channel (2008) (37)
- Transit‐time mechanism of plasma instability in high electron mobility transistors (2005) (37)
- New short-channel n-MOSFET current-voltage model in strong inversion and unified parameter extraction method (1991) (37)
- Low field mobility, effective saturation velocity and performance of submicron GaAs MESFETs (1982) (37)
- Effective g(*) factor of two-dimensional electrons in GaN/AlGaN heterojunctions (1999) (37)
- Analysis of noise margin and speed of GaAs MESFET DCFL using UM-SPICE (1986) (36)
- Helicity-Driven Ratchet Effect Enhanced by Plasmons. (2015) (36)
- Piezoresistive effect in GaN–AlN–GaN structures (1997) (36)
- Two-dimensional hole gas induced by piezoelectric and pyroelectric charges (2000) (36)
- Plasma Instability and Terahertz Generation in HEMTs Due to Electron Transit-Time Effect (2006) (36)
- Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy (2009) (36)
- Ternary and quaternary III-V compounds (1999) (36)
- Pyroelectric and Piezoelectric Properties of Gan-Based Materials (1998) (36)
- Spreading resistance of a round ohmic contact (1993) (36)
- AlGaAs/InGaAs/GaAs quantum well doped channel heterostructure field effect transistors (1990) (36)
- Sub-terahertz testing of silicon MOSFET (2008) (36)
- Solid-State Lighting R & D Plan (2001) (36)
- Sic Materials and Devices: Volume 1 (2006) (35)
- MIT Microelectronics WebLab (2003) (35)
- Low-frequency noise in AlGaN/GaN MOS-HFETs (2000) (35)
- Quantum-well p-channel AlGaAs/InGaAs/GaAs heterostructure insulated-gate field-effect transistors (1989) (35)
- High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics (2014) (35)
- Terahertz Sensing Technology: Volume 1: Electronic Devices and Advanced Systems Technology (2003) (35)
- Quadrichromatic white solid state lamp with digital feedback (2004) (35)
- Novel resonant tunneling transistor with high transconductance at room temperature (1994) (35)
- Time-resolved experimental study of carrier lifetime in GaN epilayers (2005) (34)
- Graphene based plasma-wave devices for terahertz applications (2020) (34)
- High-transconductance beta -SiC buried-gate JFETs (1989) (34)
- Graphene Tunneling Transit-Time Terahertz Oscillator Based on Electrically Induced p–i–n Junction (2009) (34)
- 1/ $f$ Noise Characteristics of MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures (2015) (34)
- THz SPICE for Modeling Detectors and Nonquadratic Response at Large Input Signal (2013) (34)
- Modeling of high-dose-rate transient ionizing radiation effects in bipolar devices (2001) (34)
- Steady-state electron transport in the III–V nitride semiconductors: A sensitivity analysis (2003) (34)
- Optimization of multichip white solid state lighting source with four or more LEDs (2001) (34)
- DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress (2002) (33)
- Terahertz Photoconductive Emitter With Dielectric-Embedded High-Aspect-Ratio Plasmonic Grating for Operation with Low-Power Optical Pumps (2019) (33)
- SILICON FINFETS AS DETECTORS OF TERAHERTZ AND SUB-TERAHERTZ RADIATION (2011) (33)
- Voltage-tunable terahertz and infrared photodetectors based on double-graphene-layer structures (2014) (33)
- Amplified-reflection plasmon instabilities in grating-gate plasmonic crystals (2016) (33)
- A new technique for characterization of the "End" resistance in modulation-doped FET's (1984) (33)
- Current-voltage characteristics, small-signal parameters, and switching times of GaAs FET's (1978) (33)
- LASERS, OPTICS, AND OPTOELECTRONICS 1683 Effect of interface structure on the optical properties of InAs'GaSb laser active regions (2002) (33)
- Large-signal linearity in III-N MOSDHFETs (2003) (33)
- The Raman Spectrum of NaNO2 in the Ferroelectric Phase (1966) (33)
- Steady-state and transient electron transport within bulk wurtzite zinc oxide (2010) (32)
- Enhanced electromagnetic coupling between terahertz radiation and plasmons in a grating-gate transistor structure on membrane substrate. (2010) (32)
- Steady-state and transient electron transport within wurtzite and zinc-blende indium nitride (2013) (32)
- FET Characterization using gated-TLM structure (1985) (32)
- Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures (2002) (31)
- Trapping-enhanced temperature variation of the threshold voltage of GaAs MESFET's (1986) (31)
- Light-Emitting Diodes: Progress in Solid-State Lighting (2001) (31)
- Theory and measurement of plasmonic terahertz detector response to large signals (2014) (31)
- Maximum current in nitride-based heterostructure field-effect transistors (2002) (31)
- Piezoresistive effect in metal–semiconductor–metal structures on p-type GaN (2000) (31)
- A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review (2015) (31)
- Recent advances in application of acoustic, acousto‐optic and photoacoustic methods in biology and medicine (2007) (31)
- Well-width-dependent carrier lifetime in AlGaN∕AlGaN quantum wells (2007) (31)
- Instabilities in modulation doped field-effect transistors (MODFETs) at 77 K (1983) (31)
- New negative resistance regime of heterostructure insulated gate transistor (HIGFET) operation (1986) (31)
- Double-graphene-layer terahertz laser: concept, characteristics, and comparison. (2013) (31)
- Nanometer Scale Complementary Silicon MOSFETs as Detectors of Terahertz and Sub-terahertz Radiation (2007) (31)
- Below threshold conduction in a‐Si:H thin film transistors with and without a silicon nitride passivating layer (1996) (30)
- Optical studies of degradation of AlGaN quantum well based deep ultraviolet light emitting diodes (2010) (30)
- Modeling Terahertz Plasmonic Si FETs With SPICE (2013) (30)
- Mechanism of self-excitation of terahertz plasma oscillations in periodically double-gated electron channels (2008) (30)
- Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four-wave mixing technique (2003) (29)
- Plasma Wave Electronics for Terahertz Applications (2001) (29)
- Imaging of field-effect transistors by focused terahertz radiation (2009) (29)
- Ballistic and near ballistic transport in GaAs (1980) (29)
- Current—Voltage characteristics of ungated GaAs FET's (1985) (29)
- Plasma Instability and Nonlinear Terahertz Oscillations in Resonant-Tunneling Structures (2001) (29)
- Steady-state and transient electron transport within the wide energy gap compound semiconductors gallium nitride and zinc oxide: an updated and critical review (2014) (29)
- Enhancement of Schottky barrier height in heterodimensional metal-semiconductor contacts (1997) (29)
- Recombination current in forward-biased p-n junctions (1988) (28)
- Concentration dependence of the 1/f noise in AlGaN/GaN heterostructure field effect transistors (2002) (28)
- Electrically-induced n-i-p junctions in multiple graphene layer structures (2010) (28)
- Persistent photoconductivity in (Al,Ga)As/GaAs modulation doped structures: Dependence on structure and growth temperature (1983) (28)
- Carrier distribution and low-field resistance in short n+-n--n+and n+-p--n+structures (1983) (28)
- High‐Temperature Performance of AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field‐Effect‐Transistors (2001) (28)
- Rendering a color palette by light-emitting diodes (2008) (28)
- The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis (2010) (28)
- Capacitance‐voltage characteristics of amorphous silicon thin‐film transistors (1989) (28)
- Enhancement of electron velocity in modulation-doped (Al,Ga)As/GaAs FETs at cryogenic temperatures (1982) (28)
- Current-driven plasmonic boom instability in three-dimensional gated periodic ballistic nanostructures (2015) (28)
- Resonant detection and frequency multiplication of terahertz radiation utilizing plasma waves in resonant-tunneling transistors (2000) (28)
- Low frequency and 1/f noise in wide-gap semiconductors: silicon carbide and gallium nitride (2002) (28)
- III-nitride based deep ultraviolet light sources (2008) (28)
- Plasma wave instability and amplification of terahertz radiation in field-effect-transistor arrays (2008) (27)
- Fast-response and low-loss surface acoustic wave humidity sensor based on bovine serum albumin-gold nanoclusters film (2017) (27)
- Plasma oscillations in a slot diode structure with a two-dimensional electron channel (2004) (27)
- SiC materials and devices (2006) (27)
- Flat‐band voltage and surface states in amorphous silicon‐based alloy field‐effect transistors (1984) (27)
- Polar optical phonon instability and intervalley transfer in III-V semiconductors (2001) (27)
- Exciton and carrier motion in quaternary AlInGaN (2003) (27)
- Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors (2003) (27)
- Complementary heterostructure insulated gate field effect transistors (HIGFETs) (1985) (27)
- ADVANCED SOLUTIONS FOR PERFORMING REAL EXPERIMENTS OVER THE INTERNET (2001) (27)
- Low-Frequency Noise in n-GaN with High Electron Mobility (1999) (27)
- Carrier lifetime in conductive and vanadium-doped 6H-SiC substrates (2004) (27)
- Admittance of a slot diode with a two-dimensional electron channel (2003) (26)
- 247 nm Ultra-Violet Light Emitting Diodes (2007) (26)
- Current-voltage and capacitance-voltage characteristics of heterostructure insulated-gate field-effect transistors (1987) (26)
- Distributive nature of gate current and negative transconductance in heterostructure field-effect transistors (1989) (26)
- Analysis of light-induced degradation in amorphous silicon alloy p-i-n solar cells (1985) (26)
- Monte Carlo simulation of semiconductor devices (1991) (26)
- Deep-ultraviolet tailored- and low-refractive index antireflection coatings for light-extraction enhancement of light emitting diodes (2013) (26)
- Two numerical studies of trailing vortices (1998) (26)
- Stimulated emission in AlGaN/AlGaN quantum wells with different Al content (2012) (26)
- Enhanced heterostructure field effect transistor CAD model suitable for simulation of mixed mode circuits (1999) (26)
- Spin and interaction effects in Shubnikov–de Haas oscillations and the quantum Hall effect in GaN/AlGaN heterostructures (2004) (25)
- Novel AlInN/GaN integrated circuits operating up to 500 °C (2014) (25)
- Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p–n junctions (2016) (25)
- Deep‐UV LED controlled AlGaN‐based SAW oscillator (2006) (25)
- Screening dynamics of intrinsic electric field in AlGaN quantum wells (2008) (25)
- Low 1/f Noise in AlGaN/GaN HFETs on SiC Substrates (1999) (25)
- Electron mobility and velocity in compensated GaAs (1986) (25)
- High temperature operation of alpha-silicon carbide buried-gate junction field-effect transistors (1991) (25)
- DESIGN AND FABRICATION OF HIGH TRANSCONDUCTANCE MODULATION-DOPED (Al,Ga)As/GaAs FETS. (1983) (25)
- Plasmonic terahertz detectors for biodetection (2008) (25)
- Exciton hopping and nonradiative decay in AlGaN epilayers (2005) (25)
- Wide band gap semiconductor technology: State-of-the-art (2019) (25)
- Hole subbands in one-dimensional quantum well wires (1988) (25)
- High-power AlGaN∕InGaN∕AlGaN∕GaN recessed gate heterostructure field-effect transistors (2005) (24)
- Ultimate response time of high electron mobility transistors (2015) (24)
- 1/f noise in conducting channels of topological insulator materials (2011) (24)
- Heterodimensional Schottky metal–two‐dimensional electron gas interfaces (1993) (24)
- Disk and stripe capacitances (1995) (24)
- Terahertz Sensing Technology: Volume 2: Emerging Scientific Applications and Novel Device Concepts (2004) (24)
- Migration enhanced MOCVD (MEMOCVDTM) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate (2005) (24)
- GaN-BASED POWER HIGH ELECTRON MOBILITY TRANSISTORS (2003) (24)
- New mechanism of gate current in heterostructure insulated gate field-effect transistors (1986) (24)
- Design criteria for GaAs MESFETs related to stationary high field domains (1980) (24)
- Plasma mechanisms of resonant terahertz detection in a two-dimensional electron channel with split gates (2007) (24)
- Capacitance-voltage characteristics of microwave Schottky diodes (1991) (23)
- Minority‐carrier diffusion lengths in amorphous silicon‐based alloys (1982) (23)
- Low-frequency noise in GaN nanowire transistors (2008) (23)
- Electron transport and terahertz radiation detection in submicrometer-sized GaAs/AlGaAs field-effect transistors with two-dimensional electron gas (2004) (23)
- Monte Carlo simulation of short channel heterostructure field-effect transistors (1991) (23)
- Strong terahertz absorption bands in a scaled plasmonic crystal (2007) (23)
- The sensitivity of the steady-state and transient electron transport within bulk wurtzite zinc oxide to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient (2012) (23)
- Drift mobility of electrons in AlGaN/GaN MOSHFET (2001) (23)
- Narrow channel 2-D MESFET for low power electronics (1995) (23)
- Novel heterodimensional diodes and transistors (1995) (22)
- Tunnelling- and barrier-injection transit-time mechanisms of terahertz plasma instability in high-electron mobility transistors (2002) (22)
- Development of Deep UV LEDs and Current Problems in Material and Device Technology (2017) (22)
- Influence of electron scattering on current instability in field effect transistors (1998) (22)
- Low field mobility in GaAs ion-implanted FET's (1984) (22)
- Modeling and Scaling of a-Si:H and Poly-Si Thin Film Transistors (1997) (22)
- AIM-Lab: a system for remote characterization of electronic devices and circuits over the Internet (2000) (22)
- Analytical theory of stable domains in high-doped Gunn diodes (1970) (22)
- MATERIALS PROPERTIES OF NITRIDES: SUMMARY (2004) (22)
- Understanding noise measurements in MOSFETs: the role of traps structural relaxation (2010) (22)
- GaN-Based Pyroelectronics and Piezoelectronics (2000) (22)
- PERFORMANCE AND APPLICATIONS OF DEEP UV LED (2012) (21)
- GaAs n+-p−-n+ ballistic structure (1980) (21)
- SPICE modeling of neutron displacement damage and annealing effects in bipolar junction transistors (2003) (21)
- Graphene vertical cascade interband terahertz and infrared photodetectors (2014) (21)
- Nonlinear response of infrared photodetectors based on van der Waals heterostructures with graphene layers. (2017) (21)
- Negative and positive terahertz and infrared photoconductivity in uncooled graphene (2019) (21)
- Electromechanical Coupling Coefficient for Surface Acoustic Waves in GaN-on-Sapphire (2002) (21)
- Wide band gap electronic devices (2002) (21)
- I—V characteristics of GaAs MESFET with nonuniform doping profile (1980) (21)
- Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes (2003) (21)
- Characteristics of modulation‐doped AlxGa1−xAl/GaAs field‐effect transistors: Effect of donor‐electron separation (1983) (21)
- The investigation of the vibrational spectrum, optical constants and ionicity of bond of CdGeAs2 in crystal and amorphous phases by I.R. reflection (1969) (21)
- Raman Spectrum and Phase Transition in the Ferroelectric Crystal NaNO2 (1966) (21)
- Soft Printable Electrode Coating for Neural Interfaces (2020) (20)
- Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters (2001) (20)
- Photoluminescence efficiency droop and stimulated recombination in GaN epilayers. (2012) (20)
- A transient electron transport analysis of bulk wurtzite zinc oxide (2012) (20)
- Cooperative absorption of terahertz radiation by plasmon modes in an array of field-effect transistors with two-dimensional electron channel (2006) (20)
- GaN based transistors for high temperature applications (1997) (20)
- Intensity dependence of the minority‐carrier diffusion length in amorphous silicon based alloys (1984) (20)
- Observation of two modes of current transport through phosphorus‐doped amorphous hydrogenated silicon Schottky barriers (1982) (20)
- Acousto-optic diffraction of blue and red light in GaN (2002) (20)
- Surface-plasmons lasing in double-graphene-layer structures (2014) (20)
- Two-dimensional metal-semiconductor field effect transistor for ultra low power circuit applications (1994) (20)
- SURFACE RECONSTRUCTION OF ZINC-BLENDE GAN (1996) (20)
- Analytical model for p-channel MOSFETs (1991) (20)
- AlGaN–GaN–AlInGaN induced base transistor (2000) (20)
- Resonant Terahertz Detector Utilizing Plasma Oscillations in Two-Dimensional Electron System with Lateral Schottky Junction (2006) (19)
- Lattice Reflection and Optical Constants of ZnSnP2 Crystals with Chalcopyrite and Sphalerite Structure (1969) (19)
- Energy Band/Lattice Mismatch Engineering in Quaternary AlInGaN/GaN Heterostructure (1999) (19)
- A detailed characterization of the transient electron transport within zinc oxide, gallium nitride, and gallium arsenide (2012) (19)
- Series impedance of GaAs planar Schottky diodes operated to 500 GHz (1992) (19)
- Far-infrared photodetectors based on graphene/black-AsP heterostructures. (2020) (19)
- p-Diamond as candidate for plasmonic terahertz and far infrared applications (2018) (19)
- Optical polarization control of photo-pumped stimulated emissions at 238 nm from AlGaN multiple-quantum-well laser structures on AlN substrates (2016) (19)
- Influence of carrier localization on high-carrier-density effects in AlGaN quantum wells. (2014) (19)
- Negative terahertz conductivity and amplification of surface plasmons in graphene–black phosphorus injection laser heterostructures (2019) (19)
- Velocity-field dependence in GaAs (1987) (19)
- Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices (2018) (19)
- Monte Carlo simulation of electron transport in mercury cadmium telluride (1992) (19)
- Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection (2016) (19)
- Color rendition engineering of phosphor-converted light-emitting diodes. (2013) (19)
- Photoluminescence of AlGaN grown on bulk AlN substrates (2004) (19)
- Stimulated emission due to localized and delocalized carriers in Al0.35Ga0.65N/Al0.49Ga0.51N quantum wells (2012) (18)
- Ion-implanted GaAs-InGaAs lateral current injection laser (1999) (18)
- Homodyne phase sensitive terahertz spectrometer (2017) (18)
- Resonant plasmonic terahertz detection in vertical graphene-base hot-electron transistors (2015) (18)
- Observation of the memory steps in graphene at elevated temperatures (2011) (18)
- CdS based novel photo-impedance light sensor (2014) (18)
- Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors (2008) (18)
- Unified quasi-static MOSFET capacitance model (1993) (18)
- Plasma wave FET for sub-wavelength THz imaging (2007) (18)
- Subthreshold current ion GaAs MESFETs (1988) (17)
- Tunneling mechanism of the 1/f noise in GaN/AlGaN heterojunction field-effect transistors (2005) (17)
- The sensitivity of the steady-state electron transport within bulk wurtzite zinc oxide to variations in the non-parabolicity coefficient (2011) (17)
- High spectral uniformity of AlGaN with a high Al content evidenced by scanning near-field photoluminescence spectroscopy (2014) (17)
- Graphene vertical hot-electron terahertz detectors (2014) (17)
- Electrical modulation of terahertz radiation using graphene-phosphorene heterostructures (2018) (17)
- Dynamic behavior of hot-electron–hole plasma in highly excited GaN epilayers (2000) (17)
- Low-frequency noise of GaN-based ultraviolet light-emitting diodes (2005) (17)
- Terahertz plasmonic detector controlled by phase asymmetry. (2019) (17)
- Surface acoustic waves in graphene structures: Response to ambient humidity (2010) (17)
- Electron transport and electron energy distributions within the wurtzite and zinc-blende phases of indium nitride: Response to the application of a constant and uniform electric field (2015) (17)
- Theoretical studies of the electric field distribution and open-circuit voltage of amorphous silicon-based alloy p-i-n solar cells (1984) (17)
- Schottky barrier profiles in amorphous silicon-based materials (1980) (17)
- Ballistic admittance: Periodic variation with frequency (2006) (17)
- Complementary heterostructure insulated gate FET circuits for high-speed, low power VLSI (1986) (17)
- Resonant detection of modulated terahertz radiation in micromachined high-electron-mobility transistor (2007) (16)
- Real-space-transfer mechanism of negative differential conductivity in gated graphene-phosphorene hybrid structures: Phenomenological heating model (2018) (16)
- Effect of ambient pressure on resistance and resistance fluctuations in single-wall carbon nanotube devices (2006) (16)
- Subsecond-response SAW humidity sensor with porphyrin nanostructure deposited on bare and metallised piezoelectric substrate (2007) (16)
- Terahertz Beam Testing of Millimeter Wave Monolithic Integrated Circuits (2017) (16)
- Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells (2001) (16)
- Sub-millimeter wave signal generation and detection in CMOS (2009) (16)
- Lifetime of nonequilibrium carriers in high‐Al‐content AlGaN epilayers (2005) (16)
- Above threshold characteristics of amorphous silicon alloy thin‐film transistors (1984) (16)
- Resonant terahertz absorption by plasmons in grating-gate GaN HEMT structures (2009) (16)
- The effect of a transverse magnetic field on 1/f noise in graphene (2013) (16)
- THz Hot-Electron Micro-Bolometer Based on Low-Mobility 2-DEG in GaN Heterostructure (2013) (16)
- Electron mobility and terahertz detection using silicon MOSFETs (2003) (16)
- Controlled Synthesis of Single‐Crystalline ZnO Nanoflakes on Arbitrary Substrates at Ambient Conditions (2014) (16)
- Collision dominated, ballistic, and viscous regimes of terahertz plasmonic detection by graphene (2020) (16)
- High transconductance AlGaN/GaN optoelectronic heterostructure field effect transistor (1995) (16)
- Analysis of Tunneling-Injection Transit-Time Effects and Self-Excitation of Terahertz Plasma Oscillations in High-Electron-Mobility Transistors (2002) (16)
- Artwork visualization using a solid-state lighting engine with controlled photochemical safety. (2014) (16)
- Localized and collective magnetoplasmon excitations in AlGaN/GaN-based grating-gate terahertz modulators (2011) (16)
- Strained-Si modulation doped field effect transistors as detectors of terahertz and sub-terahertz radiation (2008) (16)
- Structural and transport properties of CdS films deposited on flexible substrates (2002) (15)
- Self-aligned modulation-doped (Al,Ga)As/GaAs field-effect transistors (1984) (15)
- Carrier lifetimes in AlGaN quantum wells: electric field and excitonic effects (2008) (15)
- Optical triggering of high-voltage (18 kV-class) 4H-SiC thyristors (2013) (15)
- Propagation of guided optical waves in thick GaN layers grown on (0001) sapphire (2000) (15)
- Correlation between yellow luminescence intensity and carrier lifetimes in GaN epilayers (2005) (15)
- Sic Materials and Devices: Volume 2 (2007) (15)
- Determination of the density of localized states in fluorinated a‐Si using deep level transient spectroscopy (1982) (15)
- Analysis of resonant detection of terahertz radiation in high-electron mobility transistor with a nanostring/carbon nanotube as the mechanically floating gate (2008) (15)
- Infrared photodetectors based on graphene van der Waals heterostructures (2017) (15)
- Low RC-Constant Perforated-Channel HFET (2014) (15)
- Hall factor for ionized impurity scattering (1995) (15)
- Optical Guided Modes and Surface Acoustic Waves in GaN Grown on (0001) Sapphire Substrates (1999) (15)
- Design Analysis of GaAs Direct Coupled Field Effect Transistor Logic (1986) (15)
- S-type current-voltage characteristic in Gunn diodes (1973) (15)
- Large Area Flexible Electronics Fabricated Using Self-Aligned Imprint Lithography (2007) (15)
- High magnetic field studies of two-dimensional electron gas in a GaN/GaAlN heterostructure: Mechanisms of parallel conduction (2001) (15)
- Determination of Density of Localized States in Amorphous Silicon Alloys From the Low Field Conductance of Thin N-I-N Diodes (1986) (15)
- Electronic devices and advanced systems technology (2003) (15)
- Novel high power AlGaN/GaN HFETs on SiC substrates (1997) (15)
- Optical triggering of 12 kV, 100 A 4H-SiC thyristors (2011) (15)
- Vertical electron transport in van der Waals heterostructures with graphene layers (2015) (15)
- Advanced Internet Technology In Laboratory Modules For Distance Learning (2001) (15)
- A resonant terahertz detector utilizing a high electron mobility transistor (1998) (15)
- Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers (2016) (14)
- High-brightness lasing at submicrometer enabled by droop-free fin light-emitting diodes (LEDs) (2020) (14)
- Effect of doping on the characteristics of infrared photodetectors based on van der Waals heterostructures with multiple graphene layers (2017) (14)
- Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor (2001) (14)
- Monte Carlo studies of electronic transport in compensated InP (1989) (14)
- Recent advances in III-V nitride electron devices (1996) (14)
- Automated Internet measurement laboratory (AIM/Lab) for engineering education (1999) (14)
- Current Crowding in High Performance Low-Loss HFET RF Switches (2008) (14)
- Negative photoconductivity and hot-carrier bolometric detection of terahertz radiation in graphene-phosphorene hybrid structures (2018) (14)
- Plasma effects in lateral Schottky junction tunneling transit-time terahertz oscillator (2006) (14)
- Analysis of bias stress on unpassivated hydrogenated amorphous silicon thin-film transistors (1998) (14)
- Strain‐engineered novel III–N electronic devices with high quality dielectric/semiconductor interfaces (2003) (14)
- Grating-gate tunable plasmon absorption in InP and GaN based HEMTs (2009) (14)
- Intrinsic electric fields in AlGaN quantum wells (2007) (14)
- Simulation and Design Analysis of (A1Ga)As/GaAs MODFET Integrated Circuits (1986) (14)
- Plasma wave instability in gated collisionless two-dimensional electron gas (2001) (14)
- Magnetic Field Influence on the Gunn Effect (1969) (14)
- Anisotropic acousto-optic diffraction by leaky wave radiation in ZX-LiNbO3 (2007) (14)
- Heating of photogenerated electrons and holes in highly excited GaN epilayers (1999) (13)
- Leaky surface acoustic waves in Z-LiNbO3 substrates with epitaxial AIN overlays (2004) (13)
- Transient electron transport in the III–V compound semiconductors gallium arsenide and gallium nitride (2013) (13)
- α-SiC buried-gate junction field effect transistors (1992) (13)
- Thin n-GaN films with low level of 1/f noise (2001) (13)
- Design and fabrication of heterostructure varactor diodes for millimeter and submillimeter wave multiplier applications (1991) (13)
- Charge Collection by Drift during Single Particle Upset (1986) (13)
- Compound Semiconductor Electronics, The Age of Maturity (1996) (13)
- Effect of image charges on impurity scattering of two‐dimensional electron gas in AlGaAs/GaAs (1985) (13)
- Computer simulation of amorphous silicon based alloy p-i-n solar cells (1983) (13)
- Surface acoustic wave response to optical absorption by graphene composite film (2012) (13)
- The resonant terahertz response of a slot diode with a two-dimensional electron channel (2005) (13)
- Short channel effects in submicron self-aligned gate heterostructure field effect transistors (1988) (13)
- Negative terahertz conductivity in disordered graphene bilayers with population inversion (2015) (13)
- Selective Gas Sensor Using Porous Silicon (2016) (13)
- Carrier diffusion and recombination in highly excited InGaN/GaN heterostructures (2005) (13)
- Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications (2021) (13)
- Doped channel pseudomorphic GaAs/InGaAs/AlGaAs hetero-structure FETs (1987) (13)
- AlGaN based highly sensitive radio-frequency UV sensor (2010) (13)
- Photoexcited carrier dynamics in AlInN/GaN heterostructures (2012) (13)
- GaN Heterodimensional Schottky Diode for THz Detection (2006) (13)
- Si-like low-frequency noise characteristics of 4H-SiC MOSFETs (2011) (13)
- Gate current of modulation-doped field-effect transistors (1988) (13)
- Consequences of space dependence of effective mass in heterostructures (1998) (13)
- RTD/2-D MESFET logic element for compact, ultra-low-power electronics (1997) (13)
- Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and superlattices (1995) (13)
- A new analytical model for heterostructure field‐effect transistors (1989) (13)
- Modeling frequency dependence of GaAs MESFET characteristics (1994) (13)
- Some electrical and optical properties of a-Si:F:H alloys (1980) (12)
- Double‐injection field‐effect transistor: A new type of solid‐state device (1986) (12)
- OPTIMIZATION OF WHITE ALL-SEMICONDUCTOR LAMP FOR SOLID-STATE LIGHTING APPLICATIONS (2002) (12)
- Modulated‐impurity‐concentration transferred‐electron devices exhibiting large harmonic frequency content (1992) (12)
- Performance prediction for submicron GaAs SDFL logic (1982) (12)
- Optical pumping in graphene-based terahertz/far-infrared superluminescent and laser heterostructures with graded-gap black-PxAs1−x absorbing-cooling layers (2019) (12)
- Electron runaway and negative differential mobility in two-dimensional electron gas in elementary semiconductors (2000) (12)
- Compact Terahertz SPICE/ADS Model (2019) (12)
- Detection and Homodyne Mixing of Terahertz Gas Laser Radiation by Submicron GaAs/AlGaAs FETs (2007) (12)
- Inspection of space shuttle insulation foam defects using a 0.2 THz Gunn diode oscillator (2004) (12)
- Evaluation of AlGaN-based deep ultraviolet emitter active regions by temperature dependent time-resolved photoluminescence (2010) (12)
- IIA-4 A self-aligned gate process for IC's based on modulation-doped (Al, Ga)As/GaAs FET's (1984) (12)
- Impact of Photocapacitance on Phase Response of GaN/Sapphire SAW UV Sensor (2010) (12)
- Dynamics of carrier recombination and localization in AlGaN quantum wells studied by time-resolved transmission spectroscopy (2009) (12)
- Holding current and switch-on mechanisms in 12 kV, 100 A 4H-SiC optically triggered thyristors (2012) (12)
- Guided-wave acousto-optic diffraction in AlxGa1−xN epitaxial layers (2004) (12)
- Magnetic field influence on the gunn effect (II) (1970) (12)
- Resonant Detection and Modulation of Terahertz Radiation by 2DEG Plasmons in GaN Grating-Gate Structures (2007) (12)
- Compact Terahertz SPICE Model: Effects of Drude Inductance and Leakage (2018) (12)
- Plasmonic instabilities in two-dimensional electron channels of variable width (2020) (12)
- Nonlinear screening of pyroelectric films and grains in semiconductor matrix (2003) (12)
- PLASMA WAVES IN TWO-DIMENSION AL ELECTRON SYSTEMS AND THEIR APPLICATIONS (2007) (12)
- Subwavelength detection of terahertz radiation using GaAs HEMTs (2009) (12)
- Maximum Powers of Low-Loss Series-Shunt FET RF Switches (2009) (12)
- Gate current in self-aligned n-channel and p-channel pseudomorphic heterostructure field-effect transistors (1991) (12)
- Impedance of thin semiconductor films in low electric field (1983) (12)
- THIN-FILM TRANSISTOR MODELING (1998) (12)
- High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors (2016) (12)
- Generation-recombination noise in forward biased 4H-SiC p-n diodes (2006) (12)
- Spill‐over effects in planar doped barrier devices (1985) (11)
- Confocal spectroscopy of InGaN LED structures (2011) (11)
- Heterodimensional field effect transistors for ultra low power applications (1998) (11)
- IEEE Sensors Journal (2022) (11)
- Semiconductor technology : processing and novel fabrication techniques (1997) (11)
- Wireless UV sensor based on photocapacitive effect in GaN (2009) (11)
- Tunable, Room Temperature CMOS-Compatible THz Emitters Based on Nonlinear Mixing in Microdisk Resonators (2016) (11)
- Influence of the Ge concentration in the virtual substrate on the low frequency noise in strained-Si surface n-channel metal-oxide-semiconductor field-effect transistors (2008) (11)
- Sub-terahertz testing of millimeter wave Monolithic and very large scale integrated circuits (2019) (11)
- A gallium arsenide SDFL gate array with on-chip RAM (1984) (11)
- Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures (2005) (11)
- Plasmonic FET Terahertz Spectrometer (2020) (11)
- UNIFIED GaAs MESFET MODEL FOR CIRCUIT SIMULATIONS (1992) (11)
- Intrinsic compact MOSFET model with correct account of positive differential conductance after saturation (2009) (11)
- Transient response of highly doped thin channel GaN metal semiconductor and metal-oxide semiconductor field effect transistors (2002) (11)
- 5-TERMINAL THzGaN BASED TRANSISTOR WITH FIELD- AND SPACE-CHARGE CONTROL ELECTRODES (2009) (11)
- Deep UV LEDs for Public Health Applications (2014) (11)
- Parallel Conduction Correction to Measured Room Temperature Mobility in (Al, Ga)As–GaAs Modulation Doped Layers (1984) (11)
- Low frequency noise in degenerate semiconductors (2001) (11)
- High current (1300 A) optical triggering of a 12 kV 4H-SiC thyristor (2013) (11)
- Plasmonic shock waves and solitons in a nanoring (2016) (11)
- Systemic resistance to the antilipolytic effect of insulin in black and white women with visceral obesity. (1999) (11)
- Migration enhanced metal organic chemical vapor deposition of AlN/GaN/InN-based heterostructures (2003) (11)
- Amorphous silicon photoconductive diode (1989) (11)
- HfO2/AlGaN/GaN structures with HfO2 deposited at ultra low pressure using an e‐beam (2007) (11)
- Iterative solutions of the generalized diode equation (1992) (11)
- Small-signal nonlinear curcuit model of GaAs MESFET (1979) (11)
- Reply to ‘‘Comment on ‘Threshold switching in chalcogenide‐glass thin films’ ’’ (1984) (11)
- Detection of microwave radiation by electronic fluid in AlGaN/GaN heterostructure field effect transistors (1997) (11)
- Silicon and Beyond: Advanced Device Models and Circuit Simulators (2000) (11)
- Room Temperature Terahertz Plasmonic Detection by Antenna Arrays of Field-Effect Transistors (2012) (11)
- Red-blue-green solid state light sources using a narrow line-width green phosphor. (2015) (10)
- Plasma Instability of 2D Electrons in a Field Effect Transistor with a Partly Gated Channel (2016) (10)
- III-Nitride Power Devices - Good Results and Great Expectations (2001) (10)
- Development of Spice Models for Amorphous Silicon Thin-Film Transistors (1989) (10)
- Chapter 4 SiC Transistors (1998) (10)
- AlGaN/GaN plasmonic terahertz electronic devices (2014) (10)
- Comparison of Intersubband Quantum-Well and Interband Graphene-Layer Infrared Photodetectors (2018) (10)
- Current-Driven Dyakonov-Shur Instability in Ballistic Nanostructures with a Stub (2018) (10)
- Charge control model of inverted GaAs-AlGaAs modulation doped FET's (IMODFET's) (1984) (10)
- Mobility enhancement in highly doped GaAs quantum wells (1987) (10)
- Current driven "plasmonic boom" instability in gated periodic ballistic nanostructures (2015) (10)
- Plasmonic properties of asymmetric dual grating gate plasmonic crystals (2016) (10)
- Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes (2006) (10)
- Low-frequency noise in graphene field-effect transistors (2011) (10)
- Implications of light‐induced defects on the performance of amorphous silicon alloy p‐i‐n solar cells (1986) (10)
- Ultraviolet-sensitive AlGaN-based surface acoustic wave devices (2004) (10)
- Dipole heterostructure field-effect transistor (1990) (10)
- Response of plasmonic terahertz detectors to amplitude modulated signals (2015) (10)
- Modeling and characterization of ion-implanted GaAs MESFET's (1987) (10)
- Polarization-induced electron island in semiconductor grain placed into pyroelectric matrix (2004) (10)
- Determination of depletion width in amorphous materials using a simple analytical model (1980) (10)
- Dipole screening regime for pyroelectric and ferroelectric films and grains in semiconductor matrix (2004) (10)
- Piezoresistive effect in AlN/GaN short range superlattice structures (1999) (10)
- Sub-half-micrometer width 2-D MESFET (1996) (10)
- Spectrum Determination of Terahertz Sources Using Fabry-Perot Interferometer and Bolometer Detector (2004) (10)
- Electron Transport Within III-V Nitride Semiconductors (2017) (10)
- Enhanced CAD model for gate leakage current in heterostructure field effect transistors (1996) (10)
- Radio frequency response of GaN-based SAW oscillator to UV illumination by the Sun and man-made source (2002) (10)
- A Semi-Analytical Interpretation of Transient Electron Transport in Gallium Nitride, Indium Nitride, and Aluminum Nitride (1998) (10)
- Novel Amorphous Silicon Thin-Film Transistors for use in Large-Area Microelectronics (1988) (10)
- International Semiconductor Device Research Symposium (ISDRS-93) (1992) (10)
- AlGaN/GaN doped channel heterostructure field effect transistors (1997) (9)
- Efficiency droop in high‐Al‐content AlGaN/AlGaN quantum wells (2011) (9)
- Plasmonic detectors and sources for THz communication and sensing (2018) (9)
- Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells (2016) (9)
- Drain-to-Gate Field Engineering for Improved Frequency Response of GaN-based HEMTs (2007) (9)
- Terahertz detection using on chip patch and dipole antenna-coupled GaAs High Electron Mobility Transistors (2014) (9)
- Subterahertz and terahertz sensing of biological objects and chemical agents (2018) (9)
- Polychromatic solid-state lamps versus tungsten radiator: hue changes of Munsell samples (2005) (9)
- Transient processes in AlGaN/GaN heterostructure field effect transistors (2000) (9)
- Negative terahertz dynamic conductivity in electrically induced lateral p-i-n junction in graphene (2010) (9)
- TWO-DIMENSIONAL ELECTRONS IN FIELD EFFECT TRANSISTORS (1998) (9)
- Wide Band GAP Semiconductors. Good Results and Great Expectations (1996) (9)
- Recent Results on Broadband Nanotransistor Based THz Detectors (2014) (9)
- Physics of Novel Amorphous Silicon High-Voltage Transistor (1987) (9)
- CURRENT INSTABILITY AND PLASMA WAVE GENERATION IN UNGATED TWO DIMENSIONAL ELECTRON LAYERS (2006) (9)
- Limitations to the open circuit voltage of amorphous silicon solar cells (1986) (9)
- Analysis of the anomalous drain current characteristics of halo MOSFETs (2003) (9)
- Electron and hole moveable islands in pyroelectric/semiconductor granular systems (2005) (9)
- Interband infrared photodetectors based on HgTe--CdHgTe quantum-well heterostructure (2018) (9)
- Advanced High Speed Devices (2009) (9)
- Maximum electric field in high-field domain (1978) (9)
- Photosensitive Inverter and Ring Oscillator With Pseudodepletion Mode Load for LCD Applications (2009) (9)
- The role of boron profiling in enhancing the performance of amorphous silicon-based alloy p-i-n solar cells (1984) (9)
- Novel multilayer modulation doped (Al,Ga)As/GaAs structures for self-aligned gate FETs (1984) (9)
- Photoluminescence dynamics of AlGaN quantum wells with built‐in electric fields and localized states (2010) (9)
- Plasma wave electronics devices (2003) (9)
- The effect of the shift of the absorption edge by electrical field in the degenerate semiconductors (1969) (9)
- High-power III-Nitride Integrated Microwave Switch with capacitively-coupled contacts (2007) (8)
- Raman measurements in water using a high‐power light‐emitting diode (2003) (8)
- Simulation of gate lag and current collapse in GaN heterojunction field effect transistors (2004) (8)
- Compact MOSFET modeling for harmonic distortion analysis (2004) (8)
- Photoluminescence efficiency in AlGaN quantum wells (2014) (8)
- Orientation and ion-implanted transverse effects in self-aligned GaAs MESFET's (1987) (8)
- Monte Carlo studies of steady‐state electronic transport in compensated In0.53Ga0.47As (1989) (8)
- Electron velocity saturation in heterostructure field-effect transistors (1990) (8)
- On the applicability of a semi-analytical approach to determining the transient electron transport response of gallium arsenide, gallium nitride, and zinc oxide (2013) (8)
- Nanoscale silicon mosfet response to THz radiation for testing VLSI (2018) (8)
- A Schottky/2-DEG varactor diode for millimeter and submillimeter wave multiplier applications (1992) (8)
- Guest Editorial THz Sensing: Materials, Devices, and Systems (2013) (8)
- Electron transport in the III-V nitride alloys (1999) (8)
- RF power limiter using capacitively-coupled contacts III-nitride varactor (2012) (8)
- High-power LEDs for plant cultivation (2004) (8)
- InP Double Heterojunction Bipolar Transistor for broadband terahertz detection and imaging systems (2015) (8)
- Low frequency noise in two‐dimensional metal‐semiconductor field effect transistor (1996) (8)
- Low-temperature redistribution of non-thermalized carriers and its effect on efficiency droop in AlGaN epilayers (2015) (8)
- Ac and Dc Characterization and Spice Modeling of Short Channel Polysilicon Tfts (1996) (8)
- Superlattice conduction in superlattice modulation‐doped field‐effect transistors (1987) (8)
- Emerging scientific applications & novel device concepts (2003) (8)
- Localization and Hopping of Excitons in Quaternary AlInGaN (2003) (8)
- $\hbox{HfO}_{2}$–III-Nitride RF Switch With Capacitively Coupled Contacts (2009) (8)
- Dependence of photoconductivity on the dark Fermi level position in amorphous silicon alloys (1984) (8)
- Coulomb electron drag mechanism of terahertz plasma instability in n+-i-n-n+ graphene FETs with ballistic injection (2021) (8)
- Graphene nanoelectromechanical resonators for the detection of modulated terahertz radiation (2014) (8)
- Optical pumping through a black-As absorbing-cooling layer in graphene-based heterostructure: thermo-diffusion model (2019) (8)
- Modeling and simulation of single- and multiple-gate 2D MESFETs (1999) (8)
- Effects of growth temperature on exciton lifetime and structural properties of ZnO films on sapphire substrate (2006) (8)
- Ballistic transport and terahertz electronics (2010) (8)
- Color-dulling solid-state sources of light. (2012) (8)
- Insulated Gate Nitride-Based Field Effect Transistors (2010) (8)
- Modelling effect of parasitics in plasmonic FETs (2015) (8)
- Finite‐Temperature Band Gap Renormalization in Highly Photoexcited GaN Epilayers (1999) (8)
- The Velocity-Field Characteristic Of Indium Nitride (1997) (8)
- Current collapse and reliability of III‐N heterostructure field effect transistors (2007) (8)
- High field Gunn domains in the presence of electron-hole pairs (1971) (8)
- Granular semiconductor/pyroelectric media as a tunable plasmonic crystal (2007) (8)
- Bandgap engineering in MBE grown Al1−xGaxN epitaxial columnar nanostructures (2012) (8)
- Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length (2007) (8)
- III-Nitride Materials and Devices for Power Electronics (2013) (8)
- Accurate Compact MOSFET Modeling Scheme for Harmonic Distortion Analysis (2004) (8)
- Carrier dynamics and efficiency droop in AlGaN epilayers with different Al content (2012) (8)
- Edge trapping mechanism of current collapse in III-N FETs (2004) (7)
- Mechanism of negative transconductance in heterostructure field-effect transistors (1990) (7)
- AlGaN deep ultraviolet LEDs with external quantum efficiency over 10% (2013) (7)
- Transient photoreflectance of AlInN/GaN heterostructures (2012) (7)
- NOVEL APPROACHES TO MICROWAVE SWITCHING DEVICES USING NITRIDE TECHNOLOGY (2011) (7)
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- Physics of Below Threshold Current Distribution in a-Si:H TFTs (1996) (7)
- 278 nm deep ultraviolet LEDs with 11% external quantum efficiency (2012) (7)
- 2- to 20-GHz Switch Using III-Nitride Capacitively Coupled Contact Varactors (2013) (7)
- Modulation Doped Field Effect Transistors (1987) (7)
- Temperature dependence of electron mobility and peak velocity in compensated GaAs (1988) (7)
- Capacitance studies of thermal equilibrium changes in n-type amorphous silicon (1987) (7)
- Progress in III-nitride based white light sources (2002) (7)
- Terahertz generation by plasma waves in nanometer gate high electron mobility transistors (2005) (7)
- CHAPTER 10 – GaN and AlGaN Ultraviolet Detectors (1998) (7)
- Guided-wave acousto-optic diffraction in Zn:LiNbO3 (2006) (7)
- SEMICONDUCTOR THIN FILMS AND THIN FILM DEVICES FOR ELECTROTEXTILES (2002) (7)
- SPECIAL ISSUE ON SENSITIVE SKIN (2000) (7)
- Terahertz Plasmonic Technology (2021) (7)
- III-nitride microwave control devices and ICs (2013) (7)
- White Complementary Solid-State Lamp (2004) (7)
- Advanced Semiconductor Devices (2007) (7)
- Hydrodynamic inverse Faraday effect in a two-dimensional electron liquid (2020) (7)
- Large signal analytical and SPICE model of THz plasmonic FET (2012) (7)
- Density of two‐dimensional electron gas in modulation‐doped structure with graded interface (1984) (7)
- Detection of space shuttle insulation foam defects by using a 0.2 THz Gunn diode oscillator and pyroelectric detector (2004) (7)
- GaN-based field effect transistors (1997) (7)
- AlGaN/GaN Microwave Switch With Hybrid Slow and Fast Gate Design (2010) (7)
- NEW ANALYTICAL POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTOR MODEL FOR COMPUTER-AIDED-DESIGN AND PARAMETER EXTRACTION (1992) (7)
- New technique for measurement of electron saturation velocity in GaAs MESFET's (1984) (7)
- The optoelectronic response of a laterally contacted 2-D MESFET (1996) (7)
- Ballistic and collision dominated transport in a short semiconductor diode (1980) (7)
- New Concepts for Submillimeter-Wave Detection and Generation (2003) (7)
- Low frequency noise in GaN-based transistors (2000) (7)
- Plasmonic and bolometric terahertz graphene sensors (2013) (7)
- Electron transport within the two-dimensional electron gas formed at a ZnO/ZnMgO heterojunction: Recent progress (2013) (7)
- Permittivity anomaly in metal-dielectric transitions. Theory and simulation (1976) (7)
- Terahertz detectors based on plasma oscillations in nanometric Silicon Field Effect Transistors (2005) (7)
- Progress in the Preparation of Aluminum Nitride Substrates from Bulk Crystals (2002) (7)
- Ultimate limits for highest modulation frequency and shortest response time of field effect transistor (2017) (7)
- Photoluminescence of GaN deposited on single-crystal bulk AlN with different polarities (2003) (7)
- Low-dimensional systems (2002) (7)
- Physics and Applications of Deep UV LEDs (2006) (7)
- Si, SiGe, InP, III-N, and p-diamond FETs and HBTs for sub-terahertz and terahertz applications (2020) (6)
- 1/f noise in GaN/AlGaN heterostructure field-effect transistors in high magnetic fields at 300 K (2004) (6)
- LOW-FREQUENCY NOISE IN AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS AND METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (2001) (6)
- Transistor modeling for the VDSM era (2000) (6)
- Spectral dependence of carrier lifetime in high aluminum content AlGaN epitaxial layers (2015) (6)
- On theory of 1/f noise in semiconductors (2001) (6)
- Low-power 2K-cell SDFL gate array and DCFL circuits using GaAs self-aligned E/D MESFETs (1988) (6)
- Studies of the Stability of Amorphous Silicon Thin Film Transistors (1992) (6)
- Transient processes in gunn diodes (1975) (6)
- Polarization Effects and UV Emission in Highly Excited Quaternary AlInGaN Quantum Wells (2001) (6)
- Spectrum of Plasma Oscillations in Slot Diode with Two-Dimensional Electron Channel (2004) (6)
- Measurements of gate voltage dependence of electron mobility in delta -doped HFET's (1993) (6)
- Work in progress - remote experimentation lab for students with learning disabilities (2008) (6)
- Sub-0.1 mu m MOSFET modelling and circuit simulation (1994) (6)
- Dynamics of nonequilibrium carrier decay in AlGaN epitaxial layers with high aluminum content. (2015) (6)
- LOW-FREQUENCY ELECTRONIC NOISE IN GRAPHENE TRANSISTORS: COMPARISON WITH CARBON NANOTUBES (2011) (6)
- The dynamic range of THz broadband FET detectors (2013) (6)
- Terahertz electronics for sensing and imaging applications (2015) (6)
- Strong ultraviolet emission from non‐polar AlGaN/GaN quantum wells grown over r‐plane sapphire substrates (2003) (6)
- The investigation of the gunn diode operation in a resonator using the computer model (1971) (6)
- Terahertz Physics, Devices, and Systems II (2006) (6)
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- AI Powered THz Testing Technology for Ensuring Hardware Cybersecurity (2020) (6)
- Optical triggering of 4H-SiC thyristors (18 kV class) to high currents in purely inductive load circuit (2014) (6)
- INSULATED GATE III-N HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (2004) (6)
- Double Ridley-Watkins-Hilsum-Gunn effect in compensated GaAs (1988) (6)
- High-temperature characteristics of 2-D MESFETs (1996) (6)
- AlInN/ GaN heterostructure field-effect transistors (2009) (6)
- Saturated gain in GaN epilayers studied by variable stripe length technique (2006) (6)
- Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates (1997) (6)
- Strain energy band engineering approach to AlN/GaN/InN heterojunction devices (2001) (6)
- S-Shaped Current-Voltage Characteristics of n+ - i - n - n+ Graphene Field-Effect Transistors due to the Coulomb Drag of Quasiequilibrium Electrons by Ballistic Electrons (2021) (6)
- Dependence of AlGaN-based SAW oscillator frequency on temperature (2004) (6)
- Thermal, self-heating and kink effects in a-Si:H thin film transistors (1998) (6)
- Velocity Overshoot And Ballistic Electron Transport In Wurtzite Indium Nitride (1997) (6)
- Contact resistance in pentacene thin film transistors (2001) (6)
- Detection of Terahertz Radiation by Dense Arrays of InGaAs Transistors (2015) (6)
- Low-loss AlInN/GaN microwave switch (2011) (6)
- Resonant Terahertz Photomixing in Integrated High-Electron-Mobility Transistor and Quantum-Well Infrared Photodetector Device (2006) (6)
- AI Powered THz VLSI Testing Technology (2020) (6)
- Determination of deep trap concentration at channel substrate interface in GaAs MESFET using sidegating measurements (2002) (6)
- EMERGING SOLID STATE TERAHERTZ ELECTRONICS (2001) (6)
- Hot Electrons and Holes in Highly Photoexcited GaN Epilayers (1999) (6)
- Color Rendering Metrics: Status, Methods, and Future Development (2016) (6)
- Getting to Know Semiconductors (1992) (6)
- The correct account of nonzero differential conductance in the saturation regime in the MOSFET compact model (2014) (6)
- Plasmons in Ballistic Nanostructures With Stubs: Transmission Line Approach (2018) (6)
- Small- and Large-Signal Performance of III-Nitride RF Switches With Hybrid Fast/Slow Gate Design (2011) (5)
- Impact ionisation in AlGaN-GaN heterostructure field effect transistors on sapphire substrates (1998) (5)
- p-Diamond, Si, GaN, and InGaAs TeraFETs (2020) (5)
- Photovoltaic effect in threads covered with CdS (2001) (5)
- Low Frequency Noise in n-GaN with High Electron Mobility (2000) (5)
- UV, blue and green light emitting diodes based on GaN-InGaN multiple quantum wells over sapphire and (111) spinel substrates (1997) (5)
- Heterostructure insulated gate field effect transistors operated in hot electron-regime (1994) (5)
- Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region (2003) (5)
- Recent progress in AlGaN/GaN-based optoelectronic devices (1997) (5)
- Low-loss high-power AlInGaN RF switches (2007) (5)
- Subpicosecond Nonlinear Plasmonic Response Probed by Femtosecond Optical Pulses (2016) (5)
- Double Channel AlGaN/GaN Heterostructure Field Effect Transistor (1998) (5)
- New split FET technique for measurements of source series resistance applied to amorphous silicon thin film transistors (1992) (5)
- 2DEG GaN hot electron microbolometers and quantum cascade lasers for THz heterodyne sensing (2011) (5)
- Multigate GaN RF Switches With Capacitively Coupled Contacts (2009) (5)
- Transferred electron effects in n-GaAs and n-InP under hydrostatic pressure (1978) (5)
- Color perception under illumination by quadrichromatic solid-state lamp (2004) (5)
- Parasitic bipolar effects leading to on-state breakdown in 2D-MESFETs (1997) (5)
- AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas (2008) (5)
- GENERATION-RECOMBINATION AND 1/f NOISE IN Al0.4Ga0.6N THIN FILMS (2002) (5)
- Effect of metallisation on surface acoustic wave velocity in GaN-on-sapphire structures (2000) (5)
- GaAs/AlGaAs double-heterojunction lateral p-i-n ridge waveguide laser (1993) (5)
- Fan out and speed of GaAs SDFL logic (1982) (5)
- GaN-based devices (2005) (5)
- Carrier lifetime and diffusion in GaN epilayers grown by MEMOCVDTM (2006) (5)
- Low threshold for optical damage in AlGaN epilayers and heterostructures (2013) (5)
- Plasmonic heterodimensional resonance for subwavelength imaging (2018) (5)
- Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric (2009) (5)
- Effect of substrate piezoelectricity on surface acoustic wave propagation in humidity-sensitive structures with porphyrin layers (2009) (5)
- Effect of near-ballistic photoelectron transport on resonant plasma-assisted photomixing in high-electron mobility transistors (2004) (5)
- Conduction Band Energy Spectrum of Two‐Dimensional Electrons in GaN/AlGaN Heterojunctions (1999) (5)
- Plasmonic Helicity‐Driven Detector of Terahertz Radiation (2018) (5)
- Influence of the second harmonic of a resonator on the parameters of a Gunn generator for transit and hybrid modes (1972) (5)
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- THz pulse detection by photoconductive plasmonic high electron mobility transistor with enhanced sensitivity (2016) (5)
- Simulations and physics of amorphous silicon thin-film transistors (1989) (5)
- Statistical approach to color rendition properties of solid state light sources (2011) (5)
- Graphene-based plasmonic metamaterial for terahertz laser transistors (2022) (5)
- Flexible semiconductor films for sensitive skin (2000) (5)
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- High-temperature performance of MoS 2 thin-film transistors : Direct current and pulse current-voltage characteristics (2015) (5)
- New optical gating technique for detection of electric field waveforms with subpicosecond resolution. (2016) (5)
- TCAD Model for TeraFET Detectors Operating in a Large Dynamic Range (2019) (5)
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- Spatially‐resolved photoluminescence study of high indium content InGaN LED structures (2010) (5)
- High-field Domains in Gunn Diodes with Two Kinds of Carriers (1974) (5)
- Far-infrared and terahertz emitting diodes based on graphene/black-P and graphene/MoS2 heterostructures. (2020) (5)
- Photovoltaic effect in CdS on flexible substrate (2001) (5)
- Gate current model for the hot-electron regime of operation in heterostructure field effect transistors (1998) (5)
- Current‐voltage and capacitance‐voltage characteristics of a metal/Al0.5Ga0.5As/GaAs capacitor (1984) (5)
- LIGHT EMITTING DIODES: TOWARD SMART LIGHTING (2011) (5)
- SIMULATIONS OF FIELD-PLATED AND RECESSED GATE GALLIUM NITRIDE-BASED HETEROJUNCTION FIELD-EFFECT TRANSISTORS (2007) (4)
- Physics of visible and UV LED devices (2012) (4)
- Gate currents in heterostructure field-effect transistors: contribution by warm' electrons (1994) (4)
- High-Temperature Electronics in Europe (2000) (4)
- Is zinc oxide a potential material for future high-power and high-frequency electron device applications? (2015) (4)
- Pandemic Equation for Describing and Predicting COVID19 Evolution (2021) (4)
- Negative terahertz conductivity in remotely doped graphene bilayer heterostructures (2015) (4)
- NON-IDEAL CURRENT TRANSPORT IN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (2008) (4)
- Dispersion studies in THz plasmonic devices with cavities (2014) (4)
- Computer calculations of the efficiency of the Gunn generator (1968) (4)
- Insertion loss and linearity of III‐nitride microwave switches (2010) (4)
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- Microwave operation of multi-channel 2D MESFET (1998) (4)
- Optical Measurements Using Light-Emitting Diodes (2004) (4)
- Temperature Dependence of Breakdown Field in p-π-n GaN Diodes (1998) (4)
- Steady-state and transient electron transport within bulk wurtzite zinc oxide and the resultant electron device performance (2013) (4)
- SPICE modeling of double diffused vertical power MOSFETs exposed to gamma radiation (2003) (4)
- The electron transport within bulk wurtzite zinc oxide in response to strong applied electric field pulses (2013) (4)
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- Plasma oscillations of two-dimensional electron stripe (2005) (4)
- Sub-terahertz FET detector with self-assembled Sn-nanothreads (2019) (4)
- Amplification of bipolar current flow by charge induced from an insulated gate electrode (1987) (4)
- Electronics Laboratory Experiments Accessible via Internet (2003) (4)
- The Influence of Substrate Surface Polarity on Optical Properties of GaN Grown on Single Crystal Bulk AlN (2002) (4)
- GENERATION-RECOMBINATION NOISE IN GaN-BASED DEVICES (2004) (4)
- Leaky surface acoustic waves in single-crystal AlN substrate (2004) (4)
- Current-Voltage Characteristics, Small-Signal Parameters, Switching Times and Power-Delay Products of GaAs MESFET's (1978) (4)
- SIMULATION AND MODELING OF COMPOUND SEMICONDUCTOR DEVICES (1995) (4)
- Terahertz excitation of the higher-order plasmon modes in field-effect transistor arrays with common and separate two-dimensional electron channels (2007) (4)
- Subthreshold and above threshold gate current in heterostructure insulated gate field-effect transistors (1992) (4)
- GaAs FETs: Device Physics and Modeling (1987) (4)
- Transverse magnetoresistance in GaAs two terminal submicron devices: A characterization of electron transport in the near ballistic regime (1980) (4)
- Study of exciton hopping in AlGaN epilayers by photoluminescence spectroscopy and Monte Carlo simulation (2006) (4)
- Performance and optimization of dipole heterostructure field-effect transistor (1992) (4)
- pi -heterostructure field effect transistors for VLSI applications (1990) (4)
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- Continuous heterostructure field effect transistor model (1990) (4)
- Consequences of space dependence of effective mass in quantum wires (2000) (4)
- Enhanced terahertz detection using multiple GaAs HEMTs connected in series (2009) (4)
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- Quasi-three-dimensional modeling of a novel 2-D MESFET (1996) (4)
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- Low frequency noise in 2D materials: Graphene and MoS2 (2017) (4)
- Plasma wave electronics: terahertz sources and detectors using two dimensional electronic fluid in high electron mobility transistors (1998) (4)
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- Low Frequency Noise in Insulated-Gate Strained-Si n-Channel Modulation Doped Field Effect Transistors (2007) (4)
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- Modelling of Thin Film Transistors for Circuit Simulation (2007) (4)
- Photoluminescence dynamics in highly nonhomogeneously excited GaN (2007) (4)
- High-field transport in a dense two-dimensional electron gas in elementary semiconductors (2001) (4)
- Photocapacitance of GaAs thin-film epitaxial structures (2005) (4)
- A 110 mW AlGaN-based UV lamp emitting at 278 nm (2005) (4)
- Low frequency noise of light emitting diodes (Invited Paper) (2005) (4)
- Generation-recombination noise in GaN and GaN-based devices (2003) (4)
- Band Structure and Transport Properties (1987) (3)
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- The instability of quasineutral waves in a semiconductor with two kinds of carriers (1971) (3)
- Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States? (1999) (3)
- Physics of GaN-based heterostructure field effect transistors (2005) (3)
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- Field Engineering Using Drain Field Controlling Electrode for Ultra High Frequency GaN-based Power HEMTs (2007) (1)
- A low-field electron mobility analysis of cubic boron nitride (2022) (1)
- Low Frequency and Microwave Noise Characteristics of GaN and GaAs-based HFETs (2001) (1)
- Time-resolved photoluminescence studies of AlGaN-based deep UV LED structures emitting down to 229 nm (2009) (1)
- Coulomb drag and plasmonic effects in graphene field-effect transistors enable resonant terahertz detection (2022) (1)
- Interview with Professor Michael Shur (2010) (1)
- Novel RF devices with multiple capacitively-coupled electrodes (2009) (1)
- InP double heterojunction bipolar transistor for detection above 1 THz (2015) (1)
- Transit-time resonances enabling amplification and generation of terahertz radiation in periodic graphene p-i-n structures with the Zener–Klein interband tunneling (2022) (1)
- Progress in GaN devices performances and reliability (2008) (1)
- AlGaN/GaN HEMTs for energy efficient systems (2013) (1)
- Properties of Surface Acoustic Waves in AlN And GaN (2002) (1)
- Invited) The Compact Models and Parameter Extraction for Thin Film Transistors (2016) (1)
- Low-Frequency Electronic Noise in the Back-Gated and Top-Gated Graphene Devices (2010) (1)
- Low-frequency noise in monodisperse platinum nanostructures near the percolation threshold (2006) (1)
- High Brightness Lasing at Sub-micron Enabled by Droop-Free Fin Light-Emitting Diodes. (2020) (1)
- Low-frequency 1/f noise in bismuth selenide Topological Insulators (2011) (1)
- Critical exponents describing divergence of the correlation radius in percolation problems (1976) (1)
- Web-Based Experimentation for Students with Learning Disabilities (2012) (1)
- Surface Acoustic Waves And Guided Optical Waves In AlGaN Films (2003) (1)
- DC and AC AIM-Spice Models for a-Si and Poly-Si TFTs (2003) (1)
- Basic Device Issues in UV Solid-State Emitters and Detectors (2004) (1)
- Large signal theory of plasma electronics terahertz detector (1998) (1)
- -Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors (2003) (1)
- DLTS response due to localized states in hydrogenated amorphous silicon (1981) (1)
- Quantum well and quantum dot infrared photodetectors: physics of operation and modeling (2003) (1)
- Noise characteristics of 340 nm and 280 in GaN-based light emitting diodes (2004) (1)
- Time- and frequency-domain measurements of carrier lifetimes in GaN epilayers (2006) (1)
- Effect of a magnetic field on the gate current in heterostructure field‐effect transistors (1990) (1)
- 1997 Advanced WORKSHOP ON FRONTIERS in ELECTRONICS (1997) (1)
- Vertical Electron Transport in van der Waals Heterostructures with Graphene Layers * (2020) (1)
- Acousto-Optic Diffraction by Shear Horizontal Surface Acoustic Waves in 36° Rotated Y-Cut X-Propagation Lithium Tantalate (2015) (1)
- High-power K-band submicron insulating gate heterostructure field-effect transistors (2003) (1)
- Stripe Geometry Light Emitting Diodes over Pulsed Lateral Epitaxial Overgrown GaN for Solid State White Lighting (2001) (1)
- Plasma wave electronics: terahertz detectors and sources using two dimensional electronic fluid in high electron mobility transistors (1997) (1)
- Amplification of terahertz radiation by stimulated emission of plasmons in graphene (2013) (1)
- Terahertz emission and detection in double-graphene-layer structures (2014) (1)
- Sensitivity analysis for an electron transport system: application to the case of wurtzite gallium nitride (2019) (1)
- Frequency tunable photo-impedance sensor (2014) (1)
- Growth of high resistance thick GaN templates by HVPE (2005) (1)
- Line of sight THz detector using TeraFET spectrometers (2021) (1)
- Frontiers in Electronics: From Materials to Systems (2000) (1)
- Strain energy band engineering in AlGaInN/GaN heterostructure field effect transistors (1999) (1)
- Lifetime of nonequilibrium carriers in AlGaN epilayers with high Al molar fraction (2004) (1)
- Color preferences revealed by statistical color rendition metric (2013) (1)
- Surface Acoustic Wave Propagation in Lanthanum Strontium Manganese Oxide - Lithium Niobate Structures (2013) (1)
- High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown on Bulk GaN, SiC, and Sapphire Substrates (2000) (1)
- Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures (2000) (1)
- Application of plasma-wave detectors for ultra-short pulse terahertz radiation (2014) (1)
- Emerging applications of deep ultraviolet light emitting diodes (2021) (1)
- Progress inGaNPerformances andReliability (2007) (0)
- MATERIAL GROWTH AND MATERIAL PROPERTIES (1995) (0)
- Plasma shock waves excited by THz radiation (2016) (0)
- Thermal Analysis of Packaged Deep Ultraviolet LEDs (2012) (0)
- Low-Frequency Noise in Top-Gate Graphene Transistors (2010) (0)
- Computer Aided Design Tools for Mixed Electronic/Photonic VLSI (2002) (0)
- Quaternary AlInGaN based vertically conducting light emitting diodes on SiC (2000) (0)
- SPICE Models for N and P Channel Polysilicon Thin Film Transistors in All Regimes of Operation (1995) (0)
- A piecewise linear approximation for output characteristic for short-channel “extrinsic” mosfet with accounting of nonzero differential conductance in saturation regime and source parasitic resistance effect at high drain biases (2019) (0)
- Deep ultraviolet emission in AlGaN-based quantum wells on bulk AlN substrates (2003) (0)
- (Invited) Improved Thin Film Transistor Model Predicts TFT Operation in the THz Range (2022) (0)
- High current duennfilmtransistor. (1989) (0)
- THz generation and detection using field effect periodic structures of variable width (2020) (0)
- Unsolved Problems of Low Frequency Noise in GaN‐Based HFETs (2005) (0)
- Magnetotransport characterization of THz detectors based on plasma oscillations in submicron field-effect transistors (2004) (0)
- EXCITATION OFGATEDANDUNGATEDPLASMONSAND GENERATIONOFTERAHERTZRADIATIONINNANOMETER-GATE FIELD-EFFECT TRANSISTOR (2005) (0)
- Erratum: Theoretical modeling of amorphous silicon‐based alloy p‐i‐n solar cells [J. Appl. Phys. 54, 5858 (1983)] (1984) (0)
- Oxide TFT Devices (2016) (0)
- [Infectious mononucleosis]. (1969) (0)
- CCD measurements of guided optical mode attenuation in GaN layers (2002) (0)
- 1/ f Noise in Graphene Field-Effect Transistors: Dependence on the Device Channel Area (2011) (0)
- Optical and Device Studies of High Al Content AlGaN Materials and Deep UV LEDs (2009) (0)
- Electronics and Photonics Division Award) High Power Nitride Based Field Effect Transistors (2016) (0)
- Novel ultrasensitive plasmonic detector of terahertz pulses enhanced by femtosecond optical pulses (2016) (0)
- New interpretation of threshold voltage in polysilicon TFTs: a theoretical and experimental study (1995) (0)
- Ja n 20 18 Interband infrared photodetectors based on HgTe – CdHgTe quantum-well heterostructures (0)
- (Invited) Percolation Carbon Nanotube Thin Film Transistors (2020) (0)
- Ratchet effect enhanced by plasmons (2014) (0)
- 2014 Technical Committee (2014) (0)
- Complementary ic structure with high transconductance. (1986) (0)
- Luminescence of ZnO Thin Films Grown on Glass by Radio-frequency Magnetron Sputtering (2008) (0)
- Design of RF to Terahertz and Terahertz to RF Frequency Converters using Variable Width Plasmonic Structures (2019) (0)
- THz detection and amplification using plasmonic field effect transistors driven by DC drain currents (2022) (0)
- Unified I-V Model and Parameter Extraction of Submicron nMOSFET for Circuit Simulaton and Statistical Process Characterization (1990) (0)
- Describing and Predicting COVID19 Evolution Using Pandemic Equation (2020) (0)
- Noise and trap density in n-channel strained-Si / SiGe modulation doped field effect transistors (2009) (0)
- IIA-6 modulation-doped field-effect transistors utilizing superlattice AlGaAs/n+-GaAs charge-control layers (1986) (0)
- Soft materials and technologies for neural interfaces (2021) (0)
- BOOK REVIEWS (by V. I. Kozub) (1995) (0)
- Low Frequency Noise as a tool to study degradation processes in 4H-SiC p-n junctions (2011) (0)
- Nonequilibrium Carrier Lifetime and Diffusion Coefficients in 6H-SiC (2004) (0)
- Field effect transistor modeling issues (1997) (0)
- Resonant excitation of plasma oscillations in a two-dimensional electron layer via diffraction of the electromagnetic wave on a perfectly conductive gate electrode (2004) (0)
- Acoustic plate mode propagation and interaction with ultraviolet light in periodic AIN-on-sapphire structure (2011) (0)
- Low-frequency noise in terahertz plasmonic field effect transistor sensors (2017) (0)
- Pandemic Equation and Pandemic Evolution (2022) (0)
- Terahertz and Subterahertz Emission and Detection by GaAs-based and GaN- based High Electron Mobility Transistors. (2004) (0)
- Fast response time of electron plasma in high electron mobility transistor channels (2015) (0)
- Concepts of terahertz and infrared devices based on graphene structures (2011) (0)
- Detection and up-conversion of infrared radiation using van der Waals heterostructures with graphene layers (2017) (0)
- Self-excitation of Terahertz Plasmons in Graphene FETs Enabled by Transit-time Negative Dynamic Conductance (2023) (0)
- Double Injection Field Effect Transistor A New Type of Solid State Device (1986) (0)
- Investigation of wide-aperture plasmonic detectors by a tightly focused terahertz beam (2014) (0)
- Invited) Zinc Oxide As a Potential Material for Future Electronic Device Applications (2017) (0)
- Tunable, Room Temperature CMOS-Compatible THz Emitters Based on Nonlinear Mixing in Microdisk Resonators (2015) (0)
- New Approaches to Realizing High Power Nitride Based Field Effect Transistors (2014) (0)
- Terahertz plasmons in grating-gate AlGaN/GaN HEMTs (2009) (0)
- Special Section Guest Editorial: Advances in Terahertz and Infrared Optoelectronics (2021) (0)
- (Invited) GaN, SiC Power Devices are Competing with Si Insulated Gate Bipolar Transistors (2018) (0)
- ESSDERC-ESSCIRC Joint plenary talks (2005) (0)
- Plasmonic FET terahertz spectrometer using Si MOS, InGaAs and GaN HEMTs and p-diamond FETs (2020) (0)
- Electron Ballistic Effects in III-V Semiconductors. (1983) (0)
- Attenuation of Surface Acoustic Waves by Carbon Nanotubes (2002) (0)
- Simulation of AlGaN/GaN Heterostructure Field Effect Transistors (2005) (0)
- Effect of electron thermal conductivity on resonant plasmonic detection in the metal/black-AsP/graphene FET terahertz hot-electron bolometers (2023) (0)
- Highly sensitive radio-frequency UV sensor based on photocapacitive effect in GaN (2009) (0)
- Effect of Doping on the Characteristics of Infrared Photodetectors Based on van der Waals Heterostructures with Multiple Graphene Layers * (2020) (0)
- Negative Terahertz Conductivity in Disordered Graphene Bilayers with Population Inversion* * (2020) (0)
- Physics and Modeling of Poly-, Micro-, and Nano-Si TFTs (2004) (0)
- Remote experimentation lab for learning disabled students (2009) (0)
- Plasmonic properties of asymmetric dual grating gate plasmonic crystals (Phys. Status Solidi B 4/2016) (2016) (0)
- Excitation of plasma oscillations and terahertz photomixing in high-electron mobility transistor (2002) (0)
- Model of the 1/f Noise in GaN/AlGaN Heterojunction Field Effect Transistors (2005) (0)
- Terahertz Lasers Based on Optically Pumped Multiple Graphene Structures with Slot-Line and Dielectric Waveguides * (2020) (0)
- OTHER SEMICONDUCTOR DEVICES (1995) (0)
- (Invited) Recent Advances in the Research of Graphene Plasmonic Terahertz Laser Transistors (2022) (0)
- Noise properties of ironfilled carbon nanotubes (2001) (0)
- LOW FREQUENCY NOISE AND INTERFACE DENSITY OF TRAPS IN InGaAs MOSFETs WITH GdScO3 HIGH-K DIELECTRIC (2011) (0)
- Graphene Vertical Hot-Electron Terahertz Detectors * (2020) (0)
- Modeling of plasma oscillations and terahertz photomixing in HEMT-like heterostructure with lateral Schottky junction (2005) (0)
- 4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics (2012) (0)
- Developments in language theory : 18th international conference, DLT 2014, Ekaterinburg, Russia, August 26-29, 2014, proceedings (2014) (0)
- SAW phase modulation by optical illumination of graphene composite films deposited on LiNbO3 (2011) (0)
- STUDY OF EXCITON HOPPING IN AlGaN EPILAYERS (0)
- p-Diamond as a plasmonic material for terahertz applications (2021) (0)
- High temperature performance of ion implanted hetero-dimensional (1999) (0)
- Noise Properties of Iron-Filled Carbon Nanotubes (2001) (0)
- GaN and AlGaN Technologies (2018) (0)
- COMPACT CAPACITANCE MODEL FOR PRINTED THIN FILM TRANSISTORS WITH NON-IDEAL CONTACTS (2011) (0)
- P-diamond Plasmonic TeraFET Detector (2020) (0)
- Low-Frequency Noise in “Graphene-Like” Exfoliated Thin Films of Topological Insulators (2011) (0)
- Graphene active plasmonics for terahertz device applications (2015) (0)
- Plasmon terahertz response of a slot diode with a two-dimensional electron channel (2004) (0)
- Biomedical and Biotechnology Applications of Deep Ultraviolet Light Emitting Diodes (2021) (0)
- Tunneling Effects and Low Frequency Noise of GaN/GaAlN HFETs (2004) (0)
- Plasmonic FETs for THz detection applications (2021) (0)
- The Use of Al(x)Ga(1-x)As Buffer Layers to Reduce Parasitic Space Charge Limited Current Flow through the Substrate in FET Structures, (1979) (0)
- Excitonic emission dynamics at cryogenic- and above room temperature in high brightness sub-micron fin LED and Lasers (2021) (0)
- Thin Film Transistor Response in the THz Range (2023) (0)
- Sub-Half-Micrometer Width 2-D (1996) (0)
- MP-A3 switching speed limits of GaAs devices for integrated circuits (1978) (0)
- International Semiconductor Device Research Symposium (ISDRS-91) Held in Charlottesville, Virginia on December 4 - 6, 1991 (1992) (0)
- Carrier Localization and Decay in Wide‐band‐gap AlGaN/AlGaN Quantum Wells (2010) (0)
- Transferred Electron Amplifiers and Logic and Functional Devices (1987) (0)
- Models for plasmonic THz detectors based on graphene split-gate FETs with lateral p-n junctions (2016) (0)
- Low-Frequency 1/f Noise in MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures (2015) (0)
- Terahertz Diagnostics of SiGe Heterojunction Bipolar Transistors (2021) (0)
- Surface-Oriented Transferred-Electron Devices (1978) (0)
- Resonant Plasmonic Terahertz Detection in Vertical Graphene-Base Hot-Electron Transistors * (2020) (0)
- ANALYSIS AND CHARACTERIZATION OF GaN BASED MATERIALS AND DEVICES (1995) (0)
- Thin film transistor modeling: Frequency dispersion (2017) (0)
- Single TeraFET Radiation Spectrometer (2018) (0)
- Efficient UV emitters for sensing and disinfection (2012) (0)
- Characteristics of vertically stacked graphene-layer infrared photodetectors (2019) (0)
- THz response based hardware security and reliability testing powered by deep learning image classification (2022) (0)
- Lateral modulation doping of two‐dimensional electron or hole gas (2013) (0)
- Effect of surface roughness on electron mobility in AlGaInN/GaN heterostructures (1999) (0)
- Absence of efficiency droop in fin Light Emitting Diodes (LEDs) (2020) (0)
- Voltage-Tunable Terahertz and Infrared Photodetectors Based on Double-Graphene-Layer Structures * (2020) (0)
- Physics of GaN Based Electronic Devices (2000) (0)
- 1/f Noise Behavior in Pentacene Organic Thin Film Transistors (1999) (0)
- Comparative Study of GaN and SiC (1994) (0)
- All manuscripts, correspondence and communication should be directed to IEEE/EDS Publications Office (2010) (0)
- Modeling of the excitation of terahertz plasma oscillations in a HEMT by ultrashort optical pulses (2003) (0)
- Quantum cascade lasers as LO for THz mixers (2011) (0)
- Terahertz Plasma Wave Electronics (2001) (0)
- Real-Space-Transfer Mechanism of Negative Differential Conductivity in Gated Graphene-Phosphorene Hybrid Structures: Phenomenological Heating Model * (2020) (0)
- Carbon nanotube-thin film transistor model for terahertz detectors (2020) (0)
- Vertical hot-electron graphene-base transistors as resonant plasmonic terahertz detectors (2015) (0)
- High-field Recombination Domains in Semiconductors with Two Types of Carrier (1972) (0)
- Amplification and lasing of terahertz radiation by plasmons in graphene nanocavities (2013) (0)
- Amplification of terahertz radiation by plasmons in graphene with a planar Bragg grating (2013) (0)
- Luminescence Decay Kinetics in GaN Studied by Frequency Domain Measurements (2008) (0)
- A theoretical analysis of strain in GaN and its effects on carrier conductivity (1994) (0)
- 1997 Advanced Workshop on Frontiers in Electronics: Wofe '97 Proceedings : Puerto De LA Cruz, Tenerife, Spain, 6-11 January 1997 (1997) (0)
- Terahertz Plasma Wave Devices (2008) (0)
- Contactless Monitoring of Conductivity Changes in Vanadium Pentoxide Xerogel Layers Using Surface Acoustic Waves (2015) (0)
- Magnetooptical studies of resonant plasma excitations in grating-gate GaN/AlGaN-based field-effect transistors (2011) (0)
- Carrier Lifetimes in GaN Revealed by Studying Photoluminescence Decay in Time and Frequency Domains (2006) (0)
- ZnO Fin Optical Cavities (2022) (0)
- Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996 (2020) (0)
- Design and simulation of self-aligned modulation doped AlGaAs/GaAs ICs (1985) (0)
- Negative Terahertz Dynamic Conductivity in Electrically Induced Lateral p-i-n Junction in Graphene * (2020) (0)
- TUNABLESCREENINGOFINTER-CONTACTPLASMONSBYARECESSED GATEINFIELD-EFFECT TRANSISTORWITHTWO-DIMENSIONALELECTRON CHANNEL (2007) (0)
- Detection of terahertz radiation in metamaterials: giant plasmonic ratchet effect (Conference Presentation) (2017) (0)
- Stimulated Emission in InGaN/GaN Quantum Wells (2002) (0)
- Computer Aided Design for Si and GaAs Integrated Circuit (1993) (0)
- GaN-based surface acoustic wave devices for optoelectronics (2002) (0)
- Analysis of stability of amorphous silicon solar cells (2008) (0)
- WBGS Epitaxial Materials Development and Scale Up for RF/Microwave-Millimeter Wave Devices (2005) (0)
- Plasmonic Si CMOS TeraFETs for detection, mixing, and processing sub-THz radiation (2022) (0)
- Heterostructure with a compound semiconductor layer (2014) (0)
- Chemical Bonds and Crystal Structure (1987) (0)
- F eb 2 02 1 Modulation characteristics of uncooled graphene photodetectors (2021) (0)
- Noise and Interface Density of Traps in 4 H‐SiC MOSFETs (2009) (0)
- Evaluation of the N- and La-induced defects in the high-κ gate stack using low frequency noise characterization (2011) (0)
- MTT-S Chapter Chairs (2004) (0)
- Novel wide band gap devices using strain energy band engineering (2003) (0)
- Contributors, Dec. 1978 (1978) (0)
- Epitaxial technique for reducing threading dislocations in located under voltage semiconductor composites (2013) (0)
- Terahertz physics, devices, and systems : 2-4 October 2006, Boston, Massachusetts, USA (2006) (0)
- Carrier dynamics in wide-band-gap AlGaN/AlGaN quantum wells (2008) (0)
- Carbon Nanotube Metal Polymer Composites for Flexible Active Interconnects (2020) (0)
- Unified Quasi-Static MOSFET Capacitance (1993) (0)
- Low-frequency noise in quasi-1D TaSe3 van der Waals nanowires (2017) (0)
- Semiconductor Quadrichromatic Lamp for General Lighting (2005) (0)
- Mechanism of the relaxation oscillations due to impact ionization in Gunn diodes (1971) (0)
- Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate (2023) (0)
- Session 25 Modeling and simulation — Advanced devices (1986) (0)
- Asymmetric backscattering of ultraviolet light by low-refractive index thin film of tilted alumina nanorods (2013) (0)
- Intersubband Hole Cyclotron Resonance in Strained Ge/GeSi MQW Heterostructures (2005) (0)
- PHYSICS OF ELECTRON TR.4NSPORT IN NITRIDE-BASED MATERIALS (2002) (0)
- Electron Transport Within the III-V Nitride Semiconductors, GaN, AIN, and InA: A Monte Carlo Analysis (2007) (0)
- Optimization of Si CMOS TeraFETs for 300 GHz band operation (2022) (0)
- Negative and Positive Terahertz and Infrared Photoconductivity in Uncooled Graphene * (2020) (0)
- Gunn Diode and IMPATT Diode Modelling (1993) (0)
- Advanced Workshop on Frontiers in Electronics WOFE'97. (1997) (0)
- Plasma Instability and Terahertz Oscillations in Resonant-Tunneling Transistors (2000) (0)
- Helicity-sensitive detection of terahertz radiation enhanced by plasmons (2020) (0)
- Modeling of resonant terahertz detector with two-dimensional electron gas and lateral Schottky junction (2007) (0)
- Detector of modulated terahertz radiation based on HEMT with mechanically floating gate (2007) (0)
- Ju l 2 02 1 S-shaped current-voltage characteristics of n +-i-n-n + graphene field-effect transistors due to the Coulomb drag of quasi-equilibrium electrons by ballistic electrons (2021) (0)
- Terahertz Emission and Detection by Plasma Waves in Nanoscale Transistors (2005) (0)
- Session 20 Modeling and simulation — Hot electron, current crowding, and alpha-particle models (1987) (0)
- Web-based Modeling, Simulation, Parameter Extraction, and Characterization for Power Electronics Curriculum (2013) (0)
- Invited) Plasmonic Terahertz Detectors (2015) (0)
- S7-N2: Terahertz lasing and detection in double-graphene-layer structures (2014) (0)
- Standing Committee Vice-Presidents Technical Committee Chairs Publication Editors-in-Chief (2015) (0)
- Determining the optimal applied electric field strength for a given electron displacement for the case of bulk wurtzite zinc oxide: A transient Monte Carlo electron transport analysis (2022) (0)
- Discovery of Coulomb-Drag Instability of Graphene Dirac Plasmons (2022) (0)
- Cultural Effect on the Preferred Color Quality of Illumination Revealed by a Color Rendition Engine (2012) (0)
- Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A. (1998) (0)
- Diffuse ultraviolet illumination (2014) (0)
- Second International Semiconductor Device Research Symposium (ISDRS-1993) (1994) (0)
- Sub-0.1 dB loss III-Nitride MOSHFET RF Switches (2008) (0)
- New High Speed Metal/2-Deg Junction Devices (1993) (0)
- Selective gas sensing with a single graphene-on-silicon transistor (2012) (0)
- Trap density in Ge-on-Si pMOSFETs with Si intermediate layers (2011) (0)
- Resonant Plasmonic Terahertz Detection in Gated Graphene <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>p</mml:mi></mml:math> - <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>i</mml:mi></mml:ma (2022) (0)
- BEYOND SPICE, A REVIEW OF MODERN ANALOG CIRCUIT SIMULATION TECHNIQUES (1998) (0)
- Best of Soviet Semiconductor Physics and Technology (1989 – 1990) (1995) (0)
- Publisher's Note: Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes (2011) (0)
- Tunable Screening of Inter-Contact Plasmons by a Recessed Gate in Field-Effect Transistor with Two-Dimensional Electron Channel (2007) (0)
- Excitation of terahertz plasma oscillations in a field-effect heterostructure device by ultrashort optical pulses: Physics and modeling (2004) (0)
- New Developments and Recent References (1987) (0)
- Speed and Convergence Properties of Improved MOSFET Models Included in the Circuit Simulator AIM-Spice (1993) (0)
- Heterostructure field effect transistor with doping dipole in charge control layer (1990) (0)
- Effect of p-i-p/sup +/ buffer on characteristics of n-channel heterostructure field-effect transistors (1992) (0)
- Terahertz Wave Generation Using Graphene and Compound Semiconductor Nano-Heterostructures (2015) (0)
- Novel Semiconductor Devices for High Speed VLSI and Ultra-High Frequency Applications (1993) (0)
- SURFACE ACOUSTIC WAVE PROPAGATION IN GaN-ON-SAPPHIRE UNDER PULSED SUB-BAND ULTRAVIOLET ILLUMINATION (2009) (0)
- Post-Harvest Produce Preservation using Deep UV LED Technology (2016) (0)
- Erratum: Temperature dependence of electron mobility and peak velocity in compensated GaAs [Appl. Phys. Lett. 52, 922 (1988)] (1988) (0)
- Far infrared spectroscopy of selected explosives (2004) (0)
- Current collapse and reliability mechanisms in GaN HEMTs (2007) (0)
- Negative Photoconductivity and Hot-Carrier Bolometric Detection of Terahertz Radiation in Graphene-Phosphorene Hybrid Structures * (2020) (0)
- Low-frequency noise in GaN-based two-dimensional structures (2003) (0)
- Low-noise near-ballistic BN-graphene-BN heterostructure field-effect transistors for energy efficient electronic applications (2015) (0)
- Plasmonic terahertz emitters with high-aspect ratio metal gratings (2019) (0)
- Sub-second humidity sensing using surface acoustic waves in electrospray-deposited carbon nanofiber and reduced graphene oxide structures (2014) (0)
- Plasma Instability and Amplified Mode Switching Effect in THz Field Effect Transistors with Grating Gate (2023) (0)
- Theorem About Third Order Invariants for Irreducible Representations of Space Groups (1967) (0)
- ectronics: Nove rahertz (1996) (0)
- A vertical thin-film transistors and optical sensor elements to eliminate the leakage current. (1990) (0)
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- Low-loss Perforated-Channel HFET (2013) (0)
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- GaAs FET Amplifiers and Microwave Monolithic Integrated Circuits (1987) (0)
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- Professor Lester F. Eastman (2002) (0)
- III-N based electronics (2008) (0)
- Potential of ultra-wideband gap semiconductors for sub-THz and THz applications (2023) (0)
- Folded gate—A novel logic gate structure (1984) (0)
- Low - Frequency Noise in Graphene Transistors (2009) (0)
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- Double graphene-layer structures for adaptive devices (2014) (0)
- 1/f Noise in Thin Films of Topological Insulator Materials (2010) (0)
- VARIABLE THRESHOLD HETEROSTRUCTURE FET STUDIED BY MONTE CARLO SIMULATION (1991) (0)
- Response of Plasmonic Terahertz Detectors to Modulated Signals (2016) (0)
- Numerical investigation of the effect of doping profiles on the high frequency performance of InP/InGaAs super scaled HBTs (2004) (0)
- Physics of AlGaN/GaN Electronic and Photonic Devices (2005) (0)
- Reduced 1/f noise in high-mobility BN-graphene-BN heterostructure transistors (2015) (0)
- Scanning near-field optical microscopy of AlGaN epitaxial layers (2016) (0)
- Effect of indirect interband transitions on terahertz conductivity in “decorated” graphene bilayer heterostructures (2016) (0)
- RECENT ADVANCES IN 111-V NITRIDE ELECTRON DEVICES (1996) (0)
- Double-Graphene-Layer Terahertz Laser: Concept, Characteristics, and Comparison * (2020) (0)
- Õ AlGaN Õ GaN – metal – insulator – semiconductor heterostructure field – effect transistors (2015) (0)
- Electrically-Induced n-i-p Junctions in Multiple Graphene Layer Structures * (2020) (0)
- P heterostructure field effect transistors (1990) (0)
- Around III-Vs (2005) (0)
- Electron and Hole Transport in Compound Semiconductors. (1995) (0)
- Dynamic Conductivity and Two-Dimensional Plasmons in Lateral CNT Networks (2017) (0)
- Intrinsic capacitance of amorphous silicon and polysilicon thin film transistors (1989) (0)
- Heterodimensional Plasmonic Stubs Enabling THz Electronics (2019) (0)
- Luminescence of highly excited nonpolar a‐plane GaN epilayers (2005) (0)
- Ultraviolet disinfection housing (2014) (0)
- Resonant properties of the planar plasmonic crystal on a membrane substrate (2012) (0)
- A3B5 COMPOUND SEMICONDUCTOR DEVICES (1995) (0)
- Models of terahertz and infrared devices based on graphene/black-AsP heterostructures (2019) (0)
- Static and transient characteristics of GaN power HFETs with low-conducting coating (2014) (0)
- Plasma Mechanisms of Resonant Terahertz Detection in a Two-Dimensional Electron Channel with Split Gates * (2020) (0)
- TERAHERTZ AND INFRARED PHOTODETECTORS BASED ON VERTICAL GRAPHENE VAN DER WAALS HETEROSTRUCTURES: CONCEPTS, FEATURES OF OPERATION AND CHARACTERISTICS (2017) (0)
- Physics of ultrahigh speed electronic devices (2016) (0)
- Plasma Wave Electronic Terahertz Technology (2003) (0)
- Plasmon terahertz response of submicron-gate high electron mobility transistor (2004) (0)
- Photocapacitance of GaAs thin-film structures fabricated on a semi-insulating compensated substrate (2004) (0)
- Humidity-sensitive SAW device based on TPPS4 nanostrip structure (2006) (0)
- Traveling-wave microwave switch using III-N gateless devices with capacitively-coupled contacts (2009) (0)
- Quaternary AlInGaN MQWs for Ultraviolet LEDs (2001) (0)
- Detection of terahertz radiation by plasma waves in field effect transistors (2002) (0)
- High Power Nitride Based Field Effect Transistors (2016) (0)
- Graphene-based 2D-heterostructures for terahertz lasers and amplifiers (2019) (0)
- Acoustoelectric effects in reflection of leaky-wave-radiated bulk acoustic waves from piezoelectric crystal-conductive liquid interface. (2016) (0)
- I-V Model in Strong Inversion and parameter Extraction of Submicron PMOSFET for Circuit Simulation and Statistical Process Characterization (1990) (0)
- (Invited) Power Loss Reduction in Perforated-Channel HFET Switches (2015) (0)
- Plasmonic Enhancement of Terahertz Devices Efficiency (2016) (0)
- Front Matter Volume 6772 (2007) (0)
- High Temperature Performance of MoS2 Thin Film Transistors (2014) (0)
- Lab on the Web: Running Real Electronic Experiments via the Internet [Book Review] (2005) (0)
- Study of Optical Gain in Thick GaN Epilayers by Variable Stripe Length Technique (2005) (0)
- Surface and volume 1/f noise in multi-layer graphene (2013) (0)
- Negative photoconduction in fully fabricated InP based HEMTs (1997) (0)
- Interview with Professor Michael Shur (Terahertz Technology) (2010) (0)
- Luminance effects on energy and color perception metrics: Revision of the MacAdam ellipses (2014) (0)
- Doping Dependence of Breakdown Field in Hgi_xCdxTe (2007) (0)
- Universal TFT Compact Model (2006) (0)
- 긴 채널 NMOSFET에 대한 통합 전류-전압 ( A Unified Current-Voltage Model for Long Channel NMOSFET's ) (1990) (0)
- S ep 2 01 4 Graphene vertical hot-electron terahertz detectors (2018) (0)
- Optical Pumping of Graphene-Based Heterostructures with Black-Arsenic-Phosphorus Absorbing-Cooling Layer for Terahertz Lasing (2019) (0)
- S-shaped Current-voltage Characteristic and Pinching of Current in Gunn Diodes (1970) (0)
- Terahertz plasmonic sources (2021) (0)
- LOW FIELD MOBILITY OF 2-D ELECTRON GAS IN MODULATION DOFED AL Ga As/GaAa LAYERS (1983) (0)
- Current Driven Plasma Instability in Graphene-FETs with Coulomb Electron Drag (2021) (0)
- Low frequency noise in Al/sub 0.4/Ga/sub 0.6/N thin films (2002) (0)
- 32. Electron Transport Within III-V Nitride Semiconductors (2017) (0)
- Quenching Plasma Waves in Two Dimensional Electron Gas by a Femtosecond Laser Pulse (2016) (0)
- Electrodynamics of plasma oscillations in semiconductor microdevices with two-dimensional electron channels (2004) (0)
- Correlation between flicker noise and current linearity in ferromagnetic-GaAs-metal tunnel contacts (2008) (0)
- High Power Nitride Field Effect Transistor (2011) (0)
- Applications of Deep Ultraviolet Light Emitting Diodes (2020) (0)
- Electromechanical and plasma resonances in two-dimensional electron systems with mechanically floating gates (2007) (0)
- Novel Heterostructure Transistors with Extremely Small Separation between Gate and Channel (1986) (0)
- Nonlinear Response of Infrared Photodetectors Based on van der Waals Heterostructures with Graphene Layers * (2020) (0)
- WlDE BAND GAP ELECTRONIC DEVlCES (KEYNOTE) (2002) (0)
- Erratum: “Collision dominated, ballistic, and viscous regimes of terahertz plasmonic detection by graphene” [J. Appl. Phys. 129, 053102 (2021)] (2021) (0)
- Terahertz Photomixing in Heterostructure Device Based on Integration of High-Electron Mobility Transistor and Quantum-Well Infrared Photodetector (2005) (0)
- Multi-Segment TFT Compact Model for THz Applications (2022) (0)
- Comments on "Charge-control MODFET model" [with reply] (1988) (0)
- Polychromatic semiconductor light sources for controlling the color saturation of illuminated surfaces (2011) (0)
- Revealing the complexity of ultra-soft hydrogel re-swelling inside the brain. (2023) (0)
- Coulomb Drag by Injected Ballistic Carriers in Graphene n + −i−n−n + Structures: Doping and Temperature Effects (2021) (0)
- High-speed stacked tunneling PiN electro-optical modulators (2013) (0)
- Emission and Detection of Terahertz Radiation Using Two-Dimensional Plasmonic Metamaterials (2015) (0)
- THz applications in space (2007) (0)
- (Invited) Ultrawide Bandgap Transistors for High Temperature and Radiation Hard Applications (2022) (0)
- An improved empirical model for a semiconductor’s velocity-field characteristic applied to gallium arsenide (2021) (0)
- Simulation of amorphous silicon P-I-N solar cells based on the complete set of semiconductor equations (1982) (0)
- Negative Terahertz Conductivity in Remotely Doped Graphene Bilayer Heterostructures * (2020) (0)
- IMPROVEMENTS TO α-Si RPI-TFT MODEL: NOW EXTRINSIC AND WITH CORRECT ACCOUNT OF THE POSITIVE DIFFERENTIAL CONDUCTIVITY AFTER SATURATION (2009) (0)
- Oxide TFT Processes I (2014) (0)
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