Milton Feng

Milton Feng's AcademicInfluence.com Rankings

Milton Feng

Engineering

#776

World Rank

#1226

Historical Rank

#327

USA Rank

Applied Physics

#124

World Rank

#131

Historical Rank

#36

USA Rank

Electrical Engineering

#371

World Rank

#417

Historical Rank

#136

USA Rank

engineering Degrees

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Engineering

Why Is Milton Feng Influential?

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According to Wikipedia, Milton Feng co-created the first transistor laser, working with Nick Holonyak in 2004. The paper discussing their work was voted in 2006 as one of the five most important papers published by the American Institute of Physics since its founding 75 years ago. In addition to the invention of transistor laser, he is also well known for inventions of other "major breakthrough" devices, including the world's fastest transistor and light-emitting transistor . As of May, 2009 he is a professor at the University of Illinois at Urbana–Champaign and holds the Nick Holonyak Jr. Endowed Chair Professorship.

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Milton Feng's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Laser operation of a heterojunction bipolar light-emitting transistor (2004) (156)
Low-actuation voltage RF MEMS shunt switch with cold switching lifetime of seven billion cycles (2003) (142)
Room temperature continuous wave operation of a heterojunction bipolar transistor laser (2005) (136)
High-frequency performance of submicrometer transistors that use aligned arrays of single-walled carbon nanotubes. (2009) (129)
Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors (2004) (112)
Device technologies for RF front-end circuits in next-generation wireless communications (2004) (110)
Charge control analysis of transistor laser operation (2007) (105)
Quantum-well-base heterojunction bipolar light-emitting transistor (2004) (100)
The transistor laser (2006) (78)
Resonance-free frequency response of a semiconductor laser (2009) (77)
Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600GHz (2005) (72)
Carrier lifetime and modulation bandwidth of a quantum well AlGaAs∕InGaP∕GaAs∕InGaAs transistor laser (2006) (71)
12.5 nm base pseudomorphic heterojunction bipolar transistors achieving fT=710GHz and fMAX=340GHz (2005) (68)
Pseudomorphic InP/InGaAs Heterojunction Bipolar Transistors (PHBTs) Experimentally Demonstrating fT = 765 GHz at 25°C Increasing to fT = 845 GHz at -55°C (2006) (64)
Hydrogen passivation of C acceptors in high-purity GaAs (1987) (63)
Low actuation voltage RF MEMS switches with signal frequencies from 0.25 GHz to 40 GHz (1999) (59)
4.3 GHz optical bandwidth light emitting transistor (2009) (51)
InP/InGaAs SHBTs with 75 nm collector and ft> 500 GHz (2003) (50)
Microwave circuit model of the three-port transistor laser (2010) (50)
Tilted-charge high speed (7 GHz) light emitting diode (2009) (48)
High-speed, low-noise InGaP/GaAs heterojunction bipolar transistors (1995) (44)
Tunnel junction transistor laser (2009) (44)
850 nm Oxide-VCSEL With Low Relative Intensity Noise and 40 Gb/s Error Free Data Transmission (2014) (43)
High-speed InGaP/GaAs HBTs with a strained In/sub x/Ga/sub 1-x/As base (1996) (42)
Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistors (1984) (41)
On the speed and noise performance of direct ion-implanted GaAs MESFETs (1993) (41)
Microwave surface impedance at 10 GHz and quasiparticle scattering in YBa2Cu3O7 films (1993) (40)
The Transistor Laser: Theory and Experiment (2013) (40)
Microwave operation and modulation of a transistor laser (2005) (38)
Liquid‐phase epitaxial growth of lattice‐matched InGaAsP on (100)‐InP for the 1.15–1.31‐μm spectral region (1978) (38)
Reliability Study of Low-Voltage RF MEMS Switches (2002) (37)
11 GHz bandwidth optical integrated receivers using GaAs MESFET and MSM technology (1993) (37)
Influence of annealing and substrate orientation on metalorganic chemical vapor deposition GaAs on silicon heteroepitaxy (1988) (36)
A RF CMOS amplifier with optimized gain, noise, linearity and return losses for UWB applications (2008) (36)
Does the two-dimensional electron gas effect contribute to high-frequency and high-speed performance of field-effect transistors? (1990) (35)
Type-II GaAsSb/InP DHBTs with Record fT = 670 GHz and Simultaneous fT, fMAX ≫ 400 GHz (2007) (35)
Stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers via hydrogenation (1987) (35)
Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation (2011) (35)
Electrical-optical signal mixing and multiplication (2-->22 GHz) with a tunnel junction transistor laser (2009) (33)
The effect of microcavity laser recombination lifetime on microwave bandwidth and eye-diagram signal integrity (2011) (33)
Activation studies of low-dose Si implants in gallium nitride (1998) (33)
Transistor laser with emission wavelength at 1544nm (2008) (33)
AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition (2000) (32)
Cr profiles in semi-insulating GaAs after annealing with and without SiO2 encapsulants in a H2-As4 atmosphere (1980) (32)
Temperature dependence of InGaP/GaAs heterojunction bipolar transistor DC and small-signal behavior (1999) (32)
Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping (2007) (31)
Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser (2006) (31)
Oxide-Confined VCSELs for High-Speed Optical Interconnects (2018) (31)
Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors (2001) (28)
Energy efficient microcavity lasers with 20 and 40 Gb/s data transmission (2011) (28)
Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition (2001) (28)
Graded-base InGaN∕GaN heterojunction bipolar light-emitting transistors (2006) (27)
850 nm oxide-confined VCSELs with 50 Gb/s error-free transmission operating up to 85 °C (2016) (27)
Graded-emitter AlGaN/GaN heterojunction bipolar transistors (2000) (26)
Franz–Keldysh Photon-Assisted Voltage-Operated Switching of a Transistor Laser (2007) (26)
Scaling of light emitting transistor for multigigahertz optical bandwidth (2009) (26)
Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with f/sub T/ of 452 GHz (2003) (25)
Impurity induced layer disordering of Si implanted AlxGa1−xAs‐GaAs quantum‐well heterostructures: Layer disordering via diffusion from extrinsic dislocation loops (1987) (25)
Auger profile study of the influence of lattice mismatch on the LPE InGaAsP-InP heterojunction interface (1979) (25)
Si‐implanted and disordered stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers (1985) (25)
Low-power, high-gain, and high-linearity SiGe BiCMOS wide-band low-noise amplifier (2004) (25)
Silicon implanted super low-noise GaAs MESFET (1982) (24)
High-Speed Visible Light Communication Using GaN-Based Light-emitting Diodes With Photonic Crystals (2017) (24)
The influence of LPE growth techniques on the alloy composition of InGaAsP (1979) (24)
Submicron InP-InGaAs single heterojunction bipolar transistors with f/sub T/ of 377 GHz (2003) (24)
Be‐implanted 1.3‐μm InGaAsP avalanche photodetectors (1979) (24)
InP/GaAsSb type-II DHBTs with fT>350 GHz (2004) (23)
Signal mixing in a multiple input transistor laser near threshold (2006) (23)
A 60 GHz GaAs FET Amplifier (1983) (23)
Relative intensity noise of a quantum well transistor laser (2012) (23)
Performance enhancement of composition-graded-base type-II InP∕GaAsSb double-heterojunction bipolar transistors with fT>500GHz (2006) (23)
Half-micrometer gate-length ion-implanted GaAs MESFET with 0.8-dB noise figure at 16 GHz (1989) (23)
Delta-doped AlGaN/AlN/GaN microwave HFETs grown by metalorganic chemical vapour deposition (2002) (23)
Interface grading in InGaAsP liquid phase epitaxial heterostructures (1980) (22)
Study of electrical and chemical profiles of Si implanted in semi-insulating GaAs substrate annealed under SiO2 and capless (1981) (22)
Temperature dependent study of carbon-doped InP/InGaAs HBT's (1996) (21)
50 Gb/s error-free data transmission of 850 nm oxide-confined VCSELs (2016) (21)
Redistribution of manganese after annealing of GaAs implanted with Si+ and Se+ (1982) (20)
Low phase noise Ka-band VCOs using InGaP/GaAs HBTs and coplanar waveguide (1997) (20)
Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling (2012) (20)
Surface Emission Vertical Cavity Transistor Laser (2012) (19)
Hydrogenation and subsequent hydrogen annealing of GaAs on Si (1989) (19)
Transistor laser optical and electrical linearity enhancement with collector current feedback (2012) (19)
Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature (2013) (19)
InP/InAlGaAs light-emitting transistors and transistor lasers with a carbon-doped base layer (2011) (19)
Self-aligned InP DHBTs for 150 GHz digital and mixed signal circuits (2005) (18)
InP Pseudormorphic Heterojunction Bipolar Transistor (PHBT) With Ft > 750GHz (2007) (18)
Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor (2004) (18)
A 40 Gb/s integrated differential PIN+TIA with DC offset control using InP SHBT technology (2002) (18)
Photon-assisted breakdown, negative resistance, and switching in a quantum-well transistor laser (2007) (18)
Temperature dependent study of the microwave performance of 0.25-/spl mu/m gate GaAs MESFETs and GaAs pseudomorphic HEMTs (1996) (18)
A Compact W-Band CMOS Power Amplifier With Gain Boosting and Short-Circuited Stub Matching for High Power and High Efficiency Operation (2011) (18)
p‐type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm (1996) (17)
High-performance millimeter-wave ion-implanted GaAs MESFETs (1989) (17)
Low noise GaAs metal‐semiconductor field‐effect transistor made by ion implantation (1982) (17)
Redshifting and broadening of quantum-well infrared photodetector's response via impurity-free vacancy disordering (1998) (17)
An on-wafer cryogenic microwave probing system for advanced transistor and superconductor applications (1993) (17)
Microwave extraction method of radiative recombination and photon lifetimes up to 85 °C on 50 Gb/s oxide-vertical cavity surface emitting laser (2016) (17)
Tunneling modulation of a quantum-well transistor laser (2016) (16)
Optical bandwidth enhancement by operation and modulation of the first excited state of a transistor laser (2007) (16)
Study of cr, si and mn distribution in semi-insulating gaas after annealing with and without SiO2 in an H2-AS4 atmosphere (1981) (16)
Design and fabrication of a 1 Gb/s OEIC receiver for fiber-optic data link applications (1996) (16)
Modulation of high current gain (β>49) light-emitting InGaN∕GaN heterojunction bipolar transistors (2007) (16)
Record fT and fT+fMAX performance of InP/InGaAs single heterojunction bipolar transistors (2003) (15)
Intra-cavity photon-assisted tunneling collector-base voltage-mediated electron-hole spontaneous-stimulated recombination transistor laser (2016) (15)
Transistor Laser Power Stabilization Using Direct Collector Current Feedback Control (2012) (15)
Growth of InGaN HBTs by MOCVD (2006) (15)
Collector characteristics and the differential optical gain of a quantum-well transistor laser (2007) (14)
High-efficiency GaAs power MESFETs prepared by ion implantation (1982) (14)
Quarter-micrometer gate ion-implanted GaAs MESFET's with an f/sub 1/ of 126 GHz (1989) (14)
Study of manganese accumulation in ion implanted GaAs influenced by Fermi energy and annealing technique (1984) (14)
The influence of growth-solution dopants on distribution coefficients in the LPE growth of InGaAsP (1979) (13)
InAlGaAs∕InP light-emitting transistors operating near 1.55μm (2008) (13)
Temperature dependence study of two-dimensional electron gas effect on the noise performance of high frequency field effect transistors (1995) (13)
Selective oxidization cavity confinement for low threshold vertical cavity transistor laser (2013) (13)
High-speed InGaAsSb/InP double heterojunction bipolar transistor with composition graded base and InAs emitter contact layers (2007) (13)
Composition dependence of the influence of lattice mismatch on surface morphology in LPE growth of InGaAsP on (100) ‐InP (1978) (13)
Physics of base charge dynamics in the three port transistor laser (2010) (13)
50th Anniversary of the Light-Emitting Diode (LED): An Ultimate Lamp [Scanning the Issue] (2013) (13)
Bandfilling and photon-assisted tunneling in a quantum-well transistor laser (2011) (13)
Collector breakdown in the heterojunction bipolar transistor laser (2006) (13)
Effect of the energy barrier in the base of the transistor laser on the recombination lifetime (2014) (12)
The effect of mode spacing on the speed of quantum-well microcavity lasers (2010) (12)
Growth of GaAs on Si using ionized cluster beam technique (1989) (12)
Ultralow leakage In/sub 0.53/Ga/sub 0.47/As p-i-n photodetector grown on linearly graded metamorphic In/sub x/Ga/sub 1-x/P buffered GaAs substrate (2005) (12)
Direct ion-implanted 0.12 μm GaAs MESFET with f/sub t/ of 121 GHz and f/sub max/ of 160 GHz (1999) (12)
Cryogenic small-signal model for 0.55 mu m gate-length ion-implanted GaAs MESFET's (1992) (12)
Redshifting of a bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetector response via laser annealing (1997) (12)
Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors (2011) (11)
Comparison of High-Speed PAM4 and QAM-OFDM Data Transmission Using Single-Mode VCSEL in OM5 and OM4 MMF Links (2020) (11)
Reduced lattice temperature high‐speed operation of pseudomorphic InGaAs/GaAs field‐effect transistors (1991) (11)
Sub-micron Scaling of High-Speed InP/InGaAs SHBTs Grown by MOCVD using Carbon as the p-Type Dopant (2002) (11)
Chirp in a transistor laser: Franz-Keldysh reduction of the linewidth enhancement (2007) (11)
GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates (1997) (11)
Correlation between chemical and electrical profiles in Si+, Se+ and S+ implanted bulk and epitaxial GaAs (1982) (11)
Bandwidth extension by trade-off of electrical and optical gain in a transistor laser: Three-terminal control (2009) (11)
Low-power performance of 0.5- mu m JFET for low-cost MMIC's in personal communications (1993) (10)
Room and low temperature study of common emitter current gain in AlGaN/GaN heterojunction bipolar transistors (2001) (10)
Relative intensity noise in high speed microcavity laser (2013) (10)
Efficient electromagnetic analysis of two-dimensional finite quasi-random gratings for quantum well infrared photodetectors (1998) (10)
0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs (1989) (10)
Device operation of InGaN heterojunction bipolar transistors with a graded emitter-base design (2006) (10)
W-band oscillator using ion-implanted InGaAs MESFETs (1991) (9)
W-band monolithic CPW Wilkinson CMOS power amplifier (2011) (9)
A technique for correction of parasitic capacitance on microwave f/sub t/ measurements of MESFET and HEMT devices (1991) (9)
Hysteresis effect in microwave power transmission of high temperature superconducting coplanar transmission lines (1995) (9)
Method to determine intrinsic and extrinsic base-collector capacitance of HBTs directly from bias-dependent S-parameter data (2001) (9)
300 GHz InP DHBT large signal model including current blocking effect and validated by Gilbert multiplier circuits (2005) (9)
Eye-diagram and scattering parameter characterization of superconducting and gold coplanar transmission lines (1994) (9)
Super-low-noise performance of direct-ion-implanted 0.25- mu m-gate GaAs MESFET's (1992) (9)
Lateral scaling of 0.25 μm InP/InGaAs SHBTs with InAs emitter cap (2004) (9)
Ultra low-noise performance of 0.15-micron gate GaAs MESFET's made by direct ion implantation for low-cost MMIC's applications (1992) (9)
Nano-scale type-II InP/GaAsSb DHBTs to reach THz cutoff frequencies (2008) (9)
Baldur: A Power-Efficient and Scalable Network Using All-Optical Switches (2020) (8)
Damaged and damage‐free hydrogenation of GaAs: The effect of reactor geometry (1988) (8)
GaAs MESFET's made by ion implantation into MOCVD Buffer layers (1984) (8)
The effect of ground and first excited state transitions on transistor laser relative intensity noise (2013) (8)
Effect of microcavity size to the RIN and 40 Gb/s data transmission performance of high speed VCSELs (2015) (8)
Accurate passive component models in coplanar waveguide for 50 GHz MMICs (1997) (8)
Resonance-free optical response of a vertical cavity transistor laser (2017) (8)
Temperature dependence of a high-performance narrow-stripe (1 μm) single quantum-well transistor laser (2011) (8)
Low cost coplanar 77 GHz single-balanced mixer using ion-implanted GaAs Schottky diodes (1998) (8)
Optical bandwidth enhancement of heterojunction bipolar transistor laser operation with an auxiliary base signal (2008) (8)
High performance ion-implanted low noise GaAs MESFET's (1982) (8)
Heteroepitaxial In0.1Ga0.9As metal‐semiconductor field‐effect transistors fabricated on GaAs and Si substrates (1989) (8)
Tunneling Modulation of Transistor Lasers: Theory and Experiment (2018) (8)
Temperature dependent analysis of 50 Gb/s oxide-confined VCSELs (2017) (8)
Ultrahigh-frequency performance of submicrometer-gate ion-implanted GaAs MESFETs (1989) (8)
0.25 m emitter InP SHBTs with fT = 550 GHz and BVCEO > 2V (2004) (8)
0.5 THz Performance of a Type-II DHBT With a Doping-Graded and Constant-Composition GaAsSb Base (2014) (8)
Mode coupling in superconducting parallel plate resonator in a cavity with outer conductive enclosure (1996) (8)
Graded Base Type-II InP/GaAsSb DHBT With GHz (2006) (8)
Improved Performance of AlGaN/GaN Heterojunction Field-Effect Transistors Using Delta Doping and a Binary Barrier (2003) (8)
InGaP/GaAs heterojunction bipolar transistor grown on a semi-insulating InGaP buffer layer (1997) (7)
Low Power Operation of a Vertical Cavity Transistor Laser via the Reduction of Collector Offset Voltage (2014) (7)
Growth of carbon doping Ga0.47In0.53As using CBr4 by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applications (1999) (7)
Microwave determination of electron-hole recombination dynamics from spontaneous to stimulated emission in a quantum-well microcavity laser (2010) (7)
Proton implantation isolation for microwave monolithic circuits (1983) (7)
Effect of Substrate Misorientation on the Structual Strain and Defect Distribution of Mocvd Grown GaAs on Si (1988) (7)
Temperature Dependent Study of the icrowave Performance of 0.25-pm Gate GaAs MESFET's and GaAs Pseudomorphic HEMT's (1996) (7)
Visible spectrum light-emitting transistors (2006) (7)
Fully integrated ion-implanted GaAs MESFET/MSM-based OEIC receiver (1995) (7)
Low‐noise GaAs field‐effect transistor made by molecular beam epitaxy (1982) (7)
85°C Operation of 850 nm VCSELs Deliver a 42 Gb/s Error-Free Data Transmission for 100 meter MMF Link (2018) (7)
MECHANICALLY CONFORMAL AND ELECTRONICALLY RECONFIGURABLE APERTURES USING LOW VOLTAGE MEMS AND FLEXIBLE MEMBRANES FOR SPACE BASED RADAR APPLICATIONS (2000) (7)
Characterization of ion‐implanted InxGa1−xAs/GaAs 0.25 μm gate metal semiconductor field‐effect transistors with Ft≳100 GHz (1991) (7)
Composition-Graded AlInP/AlGaAsSb/InP Type-II DHBTs With $f_{T}/f_{\rm MAX} = \hbox{450/510}\ \hbox{GHz}$ (2013) (7)
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 µm (1997) (7)
High temperature superconducting resonators and switches: design, fabrication, and characterization (1996) (7)
Microwave characterization of Purcell enhancement in a microcavity laser (2010) (7)
Single Quantum-Well Transistor Lasers Operating Error-Free at 22 Gb/s (2015) (7)
Ultra Broadband MEMS Switch on Silicon and GaAs Substrates (2003) (7)
Millimeter-wave ion-implanted graded In/sub x/Ga/sub 1-x/As MESFETs grown by MOCVD (1989) (7)
Ion-implanted In0.1Ga0.9As metal-semiconductor field-effect transistors on GaAs (100) substrates (1989) (6)
InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication (1996) (6)
Inversion-channel enhancement-mode GaAs MOSFETs with regrown source and drain contacts (2009) (6)
Full functionality of LSI gate arrays fabricated on 3-in-diameter, MOCVD-grown GaAs-on-silicon substrates (1988) (6)
A 14 bit, 1 GS/s digital-to-analog converter with improved dynamic performances (2000) (6)
Ion-implanted In/sub (x)/Ga/sub (1-x)/As MESFET's on GaAs substrate for low-cost millimeter-wave IC application (1992) (6)
Microwave surface resistance of YBa2Cu3O7-δ thin films deposited by pulsed organometallic beam epitaxy (1994) (6)
Radio-Frequency-Noise Characterization and Modeling of Type-II InP–GaAsSb DHBT (2008) (6)
Design and layout of multi ghz operation of light emitting diodes (2010) (6)
DEVELOPMENT OF BROADBAND LOW-VOLTAGE RF MEM SWITCHES (2001) (6)
85°C Operation of Single-Mode 850 nm VCSELs for High Speed Error-Free Transmission up to 1 km in OM4 Fiber (2019) (6)
Digital etching of III-N materials using a two-step Ar/KOH technique (2006) (6)
24-GHz low noise amplifier using coplanar waveguide series feedback in 130-nm CMOS (2009) (6)
Lateral feeding design and selective oxidation process in vertical cavity transistor laser (2013) (6)
2.5 GHz CMOS power amplifier integrated with low loss matching network for WiMAX applications (2009) (6)
850 nm VCSELs for 50 Gb/s NRZ Error-Free Transmission over 100-Meter OM4 and up to 115 °C Operation (2019) (6)
Electronically reconfigurable and mechanically conformal apertures using low-voltage MEMS and flexible membranes for space-based radar applications (2001) (6)
Cryogenic Vacuum On-Wafer Probe Svstem (1991) (6)
The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition (2000) (6)
Low-power decimation filters for oversampling ADCs via the decorrelating (DECOR) transform (2000) (5)
Performance of InP/InGaAs Heterojunction Bipolar Transistors For 40Gb/s OEIC Applications (2002) (5)
VCSEL with Bi-Layer Oxidized Aperture Enables 140-Gbit/s OFDM Transmission over 100-m-Long OM5 MMF (2019) (5)
HIGH VOLUME PRODUCTION GROWTH OF GaAs ON SILICON SUBSTRATES. (1986) (5)
An experimental determination of electron drift velocity in 0.5- mu m gate-length ion-implanted GaAs MESFET's (1991) (5)
Microwave performance of low-power ion-implanted 0.25-micron gate GaAs MESFET for low-cost MMIC's applications (1993) (5)
High drain current-voltage product of submicrometer-gate ion-implanted GaAs MESFET's for millimeter-wave operation (1992) (5)
Transistor Laser With 13.5-Gb/s Error-Free Data Transmission (2014) (5)
VERTICAL SCALING OF TYPE I InP HBT WITH FT > 500 GHZ (2004) (5)
Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser (2010) (5)
Cryogenic microwave performance of 0.5- mu m InGaAs MESFET's (1992) (5)
4-GHz Modulation Bandwidth of Integrated 2$\,\times\,$2 LED Array (2009) (5)
Distributed feedback transistor laser (2010) (5)
Base charge accumulation and push-out effects on nonlinearity of Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP double heterojunction bipolar transistors (2011) (5)
10-gb/s operation of an In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate (2006) (4)
Ka-band monolithic low-noise amplifier using direct ion-implanted GaAs MESFETs (1995) (4)
Optimization of ion‐implanted low noise GaAs metal‐semiconductor field effect transistors (1984) (4)
60-GHz power performance of ion-implanted In/sub x/Ga/sub (1-x/)As/GaAs MESFETs (1990) (4)
850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers for 40 Gb/s Error-Free Transmission up to 500 m in OM4 Fiber (2020) (4)
Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate (1998) (4)
Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mA (2003) (4)
Low noise, and high gain wideband amplifier using SiGe HBT technology (2004) (4)
2.6 K VCSEL data link for cryogenic computing (2021) (4)
All optical NOR gate via tunnel-junction transistor lasers for high speed optical logic processors (2018) (4)
A Wideband InP DHBT True Logarithmic Amplifier (2006) (4)
High-speed (/spl ges/1 GHz) electrical and optical adding, mixing, and processing of square-wave signals with a transistor laser (2006) (4)
Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors (2011) (4)
Nearly noise-free transistor operated in the 2–18 GHz range (1998) (4)
DEVELOPMENT OF BROADBAND LOW ACTUATION VOLTAGE RF MEM SWITCHES (2002) (4)
0.25 /spl mu/m emitter InP SHBTs with f/sub T/ = 550 GHz and BV/sub CEO/ > 2V (2004) (4)
Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser (2017) (4)
60-GHz noise performance of ion-implanted In/sub x/Ga/sub 1-x/As MESFET's (1991) (4)
A low-noise GaAs MESFET made with graded-channel doping profiles (1984) (4)
Comparison on OM5-MMF and OM4-MMF Data Links With 32-GBaud PAM-4 Modulated Few-Mode VCSEL at 850 nm (2020) (3)
Metamorphosis of the transistor into a laser (2015) (3)
Distributed modeling of layout parasitics effects in CMOS power devices (2010) (3)
W-band InGaP/GaAs HBT MMIC frequency sources (1999) (3)
Process and performance improvements to type-II GaAsSb/InP DHBTs (2005) (3)
An InP VCO with Static Frequency Divider for Millimeter Wave Clock Generation (2010) (3)
50 Gb/s Error-Free Data Transmission Using a NRZ-OOK Modulated 850 nm VCSEL (2018) (3)
Analysis of GaN HBT structures for high power, high efficiency microwave amplifiers (2004) (3)
A W-Band tunable Push-Push oscillator with 128X frequency division for frequency synthesis applications (2012) (3)
Submicron scaling InP/InGaAs single heterojunction bipolar transistor technology with f/sub T/ > 400 GHz for >100 GHz applications (2003) (3)
A very wide-band 14 bit, 1 GS/s track-and-hold amplifier (2000) (3)
Design and fabrication of high-speed PIN photodiodes for 50 Gb/s optical fiber links (2017) (3)
Over 500 GHz InP heterojunction bipolar transistors (2004) (3)
High performance GaAsSb∕InP double heterojunction bipolar transistors grown by gas-source molecular beam epitaxy (2006) (3)
Improvement in enhanced spontaneous emission of resonant cavity light emitting transistors via inductively coupled plasma etching top distributed bragg reflector (2013) (3)
A Very Wide-Band 14Bit, 1GSh Track-and-Hold Amplifier (2000) (3)
CHARACTERIZATION OF ION IMPLANTED GaAs SUPER LOW NOISE FIELD EFFECT TRANSISTOR. (1983) (3)
Gate current in AlInAs/GaInAs heterostructure insulated-gate field-effect transistors (HIGFETs) (1993) (3)
InP/InGaAs DHBT Large Signal Model for Nonlinearity Harmonic Predictions in ICs (2006) (3)
44 GHz hybrid low noise amplifiers using ion-implanted InxGa1-xAs MESFETs (1990) (3)
Toward THz Transistor: Pseudomorphic Heterojunction Bipolar Transistors (PHBT) (2006) (3)
Modulation-doped superlattice AlGaN barrier GaN/AlGaN HFETs (2004) (3)
780 nm Oxide-Confined VCSEL With 13.5 Gb/s Error-Free Data Transmission (2014) (3)
Noise performance of low power 0.25 micron gate ion implanted D-mode GaAs MESFET for wireless applications (1994) (3)
188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs (2000) (2)
Direct Ion-Implanted 0.12- m GaAs MESFET with of 121 GHz and of 160 GHz (1999) (2)
Growth of high purity InGaAs using different indium sources (1989) (2)
Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs. (2006) (2)
Transistor Laser-Integrated Photonics for Optical Logic: Unlocking Unique Electro-Optical Integration Potential to Open Up New Possibilities for Logic Processors (2019) (2)
The engineering research center for compound semiconductor microelectronics (1993) (2)
Microwave surface resistance of spin‐cast YBa2Cu3O7−x thin films on LaAlO3 substrates (1993) (2)
A wideband high-linearity mixer in 0.5 µm InP DHBT technology (2010) (2)
Ultra-high speed composition graded InGaAsSb/GaAsSb DHBTs with f/sub T/ = 500 GHz grown by gas-source molecular beam epitaxy (2006) (2)
Enhanced Microwave Performance of Ion-Implanted Mesfet With Graded Gaas/AlgaAs Heterojunctions (1989) (2)
Millimeter-wave power performance of ion-implanted In/sub x/Ga/sub (1-x)/As on GaAs metal semiconductor field-effect transistors (1992) (2)
Development of 90Nm InGaAs HEMTs and Benchmarking Logic Performance with Si CMOS (2010) (2)
Junction Temperature and Thermal Resistance of Ultrafast Sub-micron InP/InGaAs SHBTs (2004) (2)
Device performance of light emitting transistors with C-doped and Zn-doped base layers (2009) (2)
Material Design and Qualification on Power InGaP HBTs for 2.4 GHz Transmitter Application (2001) (2)
Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells (1997) (2)
Red shifting the intersubband response of quantum‐well infrared photodetectors by thermal annealing (1996) (2)
Physical origins of nonlinearity in InP double heterojunction bipolar transistors (2012) (2)
Effects of Rapid Thermal Annealing on the Device Characteristics of Quantum Well Infrared Photodetectors (1997) (2)
Current status of GaN heterojunction bipolar transistors (2004) (2)
The Modal Effect of VCSELs on Transmitting Data Rate Over Distance in OM4 Fiber (2020) (2)
Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution (2015) (2)
Process Development and Characteristics of Nano III-V MOSFET (2008) (2)
Hydrogenation of GaAs and Application to Device processing (1988) (2)
Direct and photon-assisted tunneling in resonant-cavity quantum-well light-emitting transistors (2018) (2)
Si‐doped GaAs by SiCl4‐AsCl3 liquid solution in AsCl3/GaAs‐Ga/H2 chemical vapor deposition system (1981) (2)
IMPURITY DEPENDENCE OF DISTRIBUTION COEFFICIENTS IN THE LPE GROWTH OF InGaAsP. (1979) (1)
A 10-Gbps In0.53Ga0.47As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate (2006) (1)
Transistor Laser for Electronic-Photonic Integrated Circuits (2013) (1)
The Development of a Symbolically Defined Large Signal InP/GaAsSb Type-II DHBT Model for 200 GHz Mixed Signal Circuit Simulation (2008) (1)
Ion-implanted GaAs/AlGaAs heterojunction FET's grown by MOCVD (1989) (1)
Monolithically integrated dual-band quantum well infrared photodetector (1997) (1)
Investigation of the current influence on near-field and far-field beam patterns for an oxide-confined vertical-cavity surface-emitting laser. (2020) (1)
Incorporation of an Alloy-Though Passivating-Ledge Process into a Fully Self- Aligned InGaP/GaAs HBT Process (2001) (1)
40 Gb/s VCSELs test data collection, analysis, and process problem identification (2017) (1)
The transistor laser (2011) (1)
Temperature and Noise Dependence of Tri-Mode VCSEL Carried 120-Gbit/s QAM-OFDM Data in Back-to-Back and OM5-MMF Links (2020) (1)
A Temperature Dependent Scalable Large Signal InP/InGaAs DHBT Model (2007) (1)
A 0.05-26 GHz Direct Conversion I/Q Modulator MMIC (2014) (1)
Growth of high performance InGaAs/InP doped channel heterojunction field effect transistor with a strained GaInP Schottky barrier enhancement layer by gas source molecular beam epitaxy (1999) (1)
Sub-100 nm Gate III-V MOSFET for Digital Applications (2010) (1)
Design and fabrication of low-power 1-Gb/s OEIC receivers (1996) (1)
150 nm InP HBT Process with Two-Level Airbridge Interconnects and MIM Capacitors for Sub-Millimeter Wave Research (2009) (1)
Design and operation of distributed feedback transistor lasers (2010) (1)
rication of a 1 Gb/s 0 iber-Optic Data Link Applications (1996) (1)
Characterization of Ion Implantation Damage in Capless Annealed GaAs (1983) (1)
Advanced Process and Modeling on 600+ GHz Emitter Ledge Type-II GaAsSb/InP DHBT (2014) (1)
Temperature dependence of noise in a GaAs metal-semiconductor field effect transistor at microwave frequencies (1998) (1)
Non-Linearity Characterization of Submicron Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP DHBTs (2012) (1)
Fabrication/Characterization of a Pseudomorphic Ga 0.1 In 0.9 P/InP MESFET (1993) (1)
Process Optimization for RF Performance of Ion-Implanted E/D MESFETs (2001) (1)
Cryogenic on-wafer microwave characterization of GaAs MESFETs and superconducting coplanar resonance and transmission lines structures (1994) (1)
Optimization of selective oxidation for 850 nm (IR) and 780 nm (far-red) energy/data efficient oxide-confined microcavity VCSELs (2014) (1)
Transistor Laser Optical NOR Gate for High Speed Optical Logic Processors (2017) (1)
Noise and gain comparison of 0.25 μm gate MESFETs and PHEMTs for low power wireless communication circuits (1996) (1)
The transistor laser: A natural for optoelectronic integrated circuits (2006) (1)
Process optimization and characterization of 25 GHz bandwidth 850 nm P-i-N photodetector for 50 Gb/s optical links (2018) (1)
An InP/InGaAs SHBT Technology for High-Speed Monolithic Optical Receivers (2003) (1)
Vertical cavity transistor laser for on-chip OICs (2015) (1)
Multilevel Si doping in GaAs using a single AsCl3:SiCl4 doping source (1982) (1)
Cryogenic 50 GHz VCSEL for sub-100 fJ/bit Optical Link (2020) (1)
Electro-optical hysteresis and bistability in the ring-cavity tunneling-collector transistor laser (2017) (1)
High DC and microwave characteristics of subhalf-micrometre gate ion-implanted GaAs MESFETs using trilayer deep UV lithography (1991) (1)
DESIGN OF OPTIMIZED EHF FETS. (1984) (1)
Bandgap Shifting of an Ultra-Thin InGaAs/InP Quantum Well Infrared Photodetector (1998) (0)
Growth and Characterization of Indium(1-X) Gallium(x) Arsenide(y) Phosphide(1-Y) for Near-Infrared Photodetectors (1979) (0)
Nick Holonyak Jr (2022) (0)
Optical NOR Gate Transistor Laser Integrated Circuit (2019) (0)
Electro-Optical Bistability in Semiconductor Laser (2018) (0)
Long wavelength shifting and broadening of quantum well infrared photodetector response via rapid thermal annealing (1996) (0)
Study of 1/f and 1/f2 noise for InP DHBT (2005) (0)
Ka-band monolithic amplifier using 0.5 mu m gate length ion-implanted GaAs/AlGaAs heterojunction FET technology (1991) (0)
A low-dark-current InGaAs photodetector made on metamorphic InGaP buffered GaAs substrate (2005) (0)
Type-ii dhbts microwave characterization and metallization issues (2011) (0)
TP-C8 auger profile study of the LPE InGaAsP-InP-InGaAsP and InGaAs-InP heterojunction interface (1979) (0)
A NRZ-OOK Modulated 850-nm VCSEL with 54 Gb/s Error-Free Data Transmission (2019) (0)
Thermal Reliability of Pt/Ti/Pt/Au Schottky Contact on InP with a GalnP Schottky Barrier Enhancement Layer (1999) (0)
Investigation of base-collector parasitics for various emitter and base geometries in GaAsSb/InP type-II DHBTs (2006) (0)
InGaP/GaAs HBT/PIN technology for 20-Gb/s and 40-Gb/s OEICs (2000) (0)
RF MISSILE SEEKER COMPONENTS REALIZED BY ASMMIC TECHNIQUES. (1988) (0)
Thin film Ba/sub 0.6/K/sub 0.4/BiO/sub 3/ microwave devices (1993) (0)
High frequency noise characterization and modeling of InGaP/GaAs SHBTs (2007) (0)
Efficient analysis of large two-dimensional arbitrarily shaped finite gratings for quantum well infrared photodetectors (1998) (0)
Exact noise parameters of lossy transmission lines (1999) (0)
850 nm Single Mode Oxide-VCSELs for 32 Gb/s Error-Free Transmission in OM4 fiber up to 300 m (2019) (0)
Rf' Mem Switches I . Introduciion (2004) (0)
Quantum-well transistor laser for optical interconnect and photonic integrated circuits (2014) (0)
Drifting-Dipole Noise (DDN) Model of MOSFETs for Microwave Circuit Design (2010) (0)
Cryogenic operation of a high speed 850 nm VCSEL with 40.1 GHz modulation bandwidth at 223 K (2020) (0)
Submicron-gate ion-implanted In0.15Ga0.85As/GaAs MESFETs with graded indium composition (1990) (0)
64-Gbit/s GaAs integrated DANE receiver/laser driver (1997) (0)
Erratum: “Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors” [Appl. Phys. Lett. 98, 242103 (2011)] (2013) (0)
HIGH-PERFORMANCE, LOW-TEMPERATURE SELF-ALIGNED GATE E/D PROCESS. (1986) (0)
Intermixed quantum well photodetectors for long-wavelength detection (1998) (0)
Modification of transconductance characteristics for ion-implanted GaAs/AlGaAs heterojunction MESFETs (1989) (0)
VA-2 optimization of ion implanted GaAs low noise FET (1983) (0)
Solar Energy Conversion using a Broad Band Coherent Concentrator with Antenna-Coupled Rectifiers (2014) (0)
Temperature-dependent bit-error-rate characterization of ultralow-noise GaAs MESFET's for 3-Gb/s operation (1993) (0)
THE ISSUE 50 th Anniversary of the Light-Emitting Diode ( LED ) : An Ultimate Lamp (2013) (0)
GaAs quantum-well infrared detectors grown on 3-inch GaAs and silicon substrates (1992) (0)
Microwave equivalent circuit modeling of 29 GHz modulated 850 nm oxide-confined VCSELs (2016) (0)
Growth and characterization of interfaces in p-type InGaAs/InP quantum-well infrared photodetectors with ultra-thin quantum wells (1996) (0)
Red-Shifting and Broadening of Quantum Well Infrared Photodetector ’ s Response via Immritv-Free Vacancv Disordering (2000) (0)
Observations of Current Blocking in InP / GaAsSb DHBTs (2004) (0)
Investigation of GaSb/InAs type II superlattices for infrared photodetectors (1996) (0)
Wideband Coherent Optical Concentrator for Photovoltaic and Rectenna Solar Cells (2013) (0)
Cryogenic Oxide-VCSELs with Bandwidth over 50 GHz at 82 K for Next-Gen High-Speed Computing (2021) (0)
100-GHz low-noise MESFET, HFET, and MSM technology for 10-Gb/s OEIC applications (1999) (0)
ow-Noise InGaP/ (1995) (0)
Controlled atmosphere annealing of ion implanted gallium arsenide. Final report 1 Jul 76-30 Nov 79 (1980) (0)
Bit Error Ratio Test Equipment for High Speed Vertical Cavity Transistor Laser and MicroCavity VCSEL and Photo Receiver (2015) (0)
DISTRIBUTED SCALABLE MODEL FOR CMOS FET POWER AMPLIFIER BY SEAN ROBERT GRAHAM THESIS (2010) (0)
Direct Tunneling Modulation of Semiconductor Lasers (2019) (0)
Integrated Photonics of Transistor Laser, Detector and Active Load for All Optical NOR Gate (2019) (0)
Be-Implanted 1.3-Micrometers InGaAsP Avalanche Photodetectors, (1978) (0)
10Gbps operation of a metamorphic InGaP buffered In0.53Ga0.47As p-i-n photodetector grown on GaAs substrate (2005) (0)
Yield improvement in fabrication of edge emitting transistor lasers by optimized BCB planarization (2013) (0)
Vertical scaling of type I InP HBT with f/sub T/ > 500 GHz (2004) (0)
13.11 The Effect of Interdigitated Layout Design on the Improvement of Optical and GHz Modulation Bandwidth of Tilted-Charge Light-Emitting Diodes (2011) (0)
Reconfigurable 43 Gb/s optical link test based upon on-wafer probes of GaAs photodetectors and VCSELs up to 85°C (2019) (0)
Low-cost GaAs MESFET and InP HFET technologies for 40-Gb/s OEICs (2000) (0)
Cryogenic Oxide-VCSEL for PAM-4 Optical Data Transmission Over 50 Gb/s at 77 K (2021) (0)
High-speed InP/lnGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n+-InP contacting layers (1996) (0)
Modeling of power supply parasitics for selecting on-wafer bypass capacitance in high-speed IC designs (2004) (0)
40.1-GHz sub-freezing 850-nm VCSEL: microwave extraction of cavity lifetimes and small-signal equivalent circuit modeling (2023) (0)
ICs : The Driver for Information Technology (2007) (0)
EFFECTS OF RELATIVE DAMAGE, FERMI ENERGY AND ANNEALING TECHNIQUE IN ION IMPLANTED GaAs. (1983) (0)
Cryogenic Oxide-Free VCSEL-Based Data Link for Focal Plane Array Camera (2019) (0)
Surface recombination and performance issues of scaling submicron emitter on Type-II GaAsSb DHBTs (2014) (0)
THIN FILM Bag.d(O~BiO3 MICROWAVE DEVICES (1993) (0)
Current and future trend of energy/bit for high speed uncool optical links (50 Gb/s and 75°C) (2017) (0)
Inductively coupled plasma dry etching process development for > 50 Gb/s 850 nm oxide-confined VCSELs (2016) (0)
Growth and Characteristics of AlGaN/GaN HBTs (2001) (0)
Data Modulation Test Equipment for Microcavity Transistor Lasers (2014) (0)
VCSEL and Smart Pixel Research for VLSI Photonics (2003) (0)
DEVELOPMENT OF ANTENNA-COUPLED METAL-INSULATOR-METAL DIODES FOR INFRARED DETECTION BY ARDY WINOTO (2015) (0)
Ka-band Ga-As FET noise receiver/device development (1982) (0)
Scattering parameter and bit error rate characterization of high temperature superconducting coplanar transmission lines (1995) (0)
Process design for manufacturability of GaAs MESFET integrated circuit using statistical experimental design techniques (1995) (0)
Undoped InP sandwiched InGaAs p-i-n photodetector with partially p-doped photoabsorption layer grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate (2006) (0)
A novel half-rate architecture for high-speed clock and data recovery (2004) (0)
High-speed two-dimensional OEIC transceiver arrays (1997) (0)
High Performance AlGaN / GaN HEMTs on Semi-Insulating SiC Substrates Grown by Metalorganic Chemical Vapor Deposition (2002) (0)
Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors (1996) (0)
aracterization of High Te erature Superconducting Coplanar Transmission Lines (1995) (0)
Heterojunction ion-implanted FETs (HIFETs) (1989) (0)
High-speed MSM/MESFET-based optoelectronic integrated circuit (OEIC) receivers for data communications (1995) (0)
GaAs- and InP-based HBT technology for 100-GHz applications (1999) (0)
Oxide-Confined VCSELs (2018) (0)
As / InP Doped-channel HFETs with f T and fmax over 170 GHz (1999) (0)
Erratum: “Microwave extraction method of radiative recombination lifetime and photon lifetimes up to 85 °C on 50 Gb/s oxide-vertical cavity surface emitting laser” [J. Appl. Phys. 120, 223103 (2016)] (2017) (0)
Towards the THz transistor (2004) (0)
Materials Science Dept., University of Southern California (2017) (0)
Nonalloyed refractory metals for self-aligned InP HBT emitter contacts with InAs/InGaAs emitter cap (2016) (0)
Process Optimization and Microwave Model of GaAs Photodiodes for 50 Gb/s Optical Links (2020) (0)

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