Morton B. Panish

Morton B. Panish's AcademicInfluence.com Rankings

Morton B. Panish

Physics

#4689

World Rank

#6402

Historical Rank

physics Degrees

Download Badge

Physics

Morton B. Panish's Degrees

Bachelors Physics City College of New York

Why Is Morton B. Panish Influential?

(Suggest an Edit or Addition)

(See a Problem?)

Morton B. Panish's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Molecular Beam Epitaxy (1980) (685)
JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE (1970) (587)
Heterostructure lasers. Part A. Fundamental principles (1978) (280)
Low‐temperature photoluminescence from InGaAs/InP quantum wires and boxes (1987) (268)
Temperature Dependence of the Energy Gap in GaAs and GaP (1969) (240)
Refractive index of AlxGa1−xAs between 1.2 and 1.8 eV (1974) (236)
Molecular Beam Epitaxy of GaAs and InP with Gas Sources for As and P (1980) (191)
Subpicosecond InP/InGaAs heterostructure bipolar transistors (1989) (185)
GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers (1971) (177)
Phase equilibria in ternary III–V systems (1972) (159)
Composition Dependence of the Ga1−xAlxAs Direct and Indirect Energy Gaps (1969) (130)
A low-threshold room-temperature injection laser (1969) (127)
Mode Reflectivity and Waveguide Properties of Double-Heterostructure Injection Lasers (1971) (123)
Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As (1987) (122)
GaAs–GaxAl1−xAs Heterostructure Injection Lasers which Exhibit Low Thresholds at Room Temperature (1970) (120)
DOUBLE‐HETEROSTRUCTURE INJECTION LASERS WITH ROOM‐TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2 (1970) (118)
Effects of two‐dimensional confinement on the optical properties of InGaAs/InP quantum wire structures (1988) (116)
InGaAs/InP long wavelength quantum well infrared photodetectors (1991) (110)
Gas-Source Molecular Beam Epitaxy (1989) (99)
Phase equilibria in III–V quaternary systems—application to Al-Ga-P-As (1974) (99)
Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers (1985) (98)
Implant‐induced high‐resistivity regions in InP and InGaAs (1989) (95)
Control of lattice parameters and dislocations in the system Ga1−xAlxAs1−yPy/GaAs (1974) (92)
High-resolution x-ray diffraction studies of InGaAs(P)/InP superlattices grown by gas-source molecular-beam epitaxy (1987) (91)
Reflection noise in index-guided InGaAsP lasers (1986) (88)
Magnesium‐doped GaAs and Alx Ga1−x As by molecular beam epitaxy (1972) (85)
Heterostructure injection lasers (1976) (84)
A thermodynamic evaluation of the simplesolution treatment of the Ga-P, In-P and Ga-As systems (1974) (83)
Dependence of the Diffusion Coefficient on the Fermi Level: Zinc in Gallium Arsenide (1967) (82)
Critical layer thickness in strained Ga1−xInxAs/InP quantum wells (1989) (80)
Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP (1989) (78)
Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasers (1971) (77)
Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy (1986) (77)
Ga-Al-As: Phase, thermodynamic and optical properties (1969) (77)
GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy (1985) (75)
The system Ga–As–Sn: Incorporation of Sn into GaAs (1973) (71)
Hot-electron InGaAs/InP heterostructure bipolar transistors with f/sub T/ of 110 GHz (1989) (71)
Beam divergence of the emission from double-heterostructure injection lasers (1973) (69)
Phase equilibria and vapor pressures of the system In+P (1970) (68)
Anomalous electric field and temperature dependence of collector multiplication in InP/Ga0.47In0.53As heterojunction bipolar transistors (1992) (67)
Ultrahigh Be doping of Ga0.47In0.53As by low‐temperature molecular beam epitaxy (1989) (67)
GaAs–AlxGa1−xAs heterostructure laser with separate optical and carrier confinement (1974) (67)
Phase equilibria in the system Al–Ga–As–Sn and electrical properties of Sn‐doped liquid phase epitaxial AlxGa1−xAs (1973) (66)
Control of orientation of CdTe grown on clean GaAs and the reconstruction of the precursor surfaces (1987) (62)
A technique for the preparation of low-threshold room-temperature GaAs laser diode structures (1969) (62)
Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy (1987) (61)
High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors (1988) (60)
Lattice‐matched InGaAsP/InP long‐wavelength quantum well infrared photodetectors (1992) (60)
Silicon‐Doped Gallium Arsenide Grown from Gallium Solution: Silicon Site Distribution (1969) (60)
Elimination of dislocations in heteroepitaxial layers by the controlled introduction of interfacial misfit dislocations (1974) (57)
Gas source molecular beam epitaxy of GaxIn1−xPyAs1−y (1984) (57)
Influence of surface band bending on the incorporation of impurities in semiconductors: Te in GaAs (1971) (56)
Ternary Condensed Phase Systems of Gallium and Arsenic with Group lB Elements (1967) (55)
The solid solubility limits of zinc in GaAs at 1000 (1967) (55)
A 10 Gbit/s OEIC photoreceiver using InP/InGaAs heterojunction bipolar transistors (1992) (55)
Metalorganic molecular beam epitaxy of InP, Ga0.47In0.53As, and GaAs with tertiarybutylarsine and tertiarybutylphosphine (1990) (51)
InGaAs/InP double-heterostructure bipolar transistors with near-ideal β versus ICcharacteristic (1986) (50)
Stress compensation in Ga1−xAlxAs1−yPy LPE layers on GaAs substrates (1973) (49)
Diffusive base transport in narrow base InP/Ga0.47In0.53As heterojunction bipolar transistors (1991) (49)
InGaAsP/InP quantum well modulators grown by gas source molecular beam epitaxy (1987) (48)
Gas source molecular beam epitaxy of GaInAs(P): Gas sources, single quantum wells, superlattice p-i-n's and bipolar transistors (1987) (48)
The gallium-arsenic-tin and gallium-arsenic-germanium ternary systems (1966) (47)
Reduction of threshold current density in GaAs–Alx Ga1−x As heterostructure lasers by separate optical and carrier confinement (1973) (47)
Intrinsic strain at lattice-matched Ga0.47In0.53As/InP interfaces as studied with high-resolution x-ray diffraction (1988) (46)
Phase equilibria and vapor pressures in the Ga + P system (1974) (43)
Photoluminescence and solution growth of gallium arsenide (1966) (42)
A mass spectrometric study of AsH3 and PH3 gas sources for molecular beam epitaxy (1986) (42)
In situ pattern formation and high quality overgrowth by gas source molecular beam epitaxy (1989) (41)
High gain InGaAs/InP heterostructure bipolar transistors grown by gas source molecular beam epitaxy (1986) (40)
The Ga+In+P system (1970) (40)
Structural perfection of InGaAs/InP strained‐layer superlattices grown by gas source molecular‐beam epitaxy: A high‐resolution x‐ray diffraction study (1989) (38)
InGaAs/InP composite collector heterostructure bipolar transistors (1992) (38)
High-resolution x-ray diffraction and transmission electron microscopy studies of InGaAs/InP superlattices grown by gas-source molecular beam epitaxy (1986) (37)
High-speed InGaAs(P)/InP double-heterostructure bipolar transistors (1987) (37)
Microwave noise performance of InP/InGaAs heterostructure bipolar transistors (1989) (37)
Bistable hot electron transport in InP/GaInAs composite collector heterojunction bipolar transistors (1992) (36)
SEMICONDUCTOR LASERS OPERATING CONTINUOUSLY IN THE ``VISIBLE'' AT ROOM TEMPERATURE (1971) (36)
InGaAs/InP hole intersubband normal incidence quantum well infrared photodetector (1992) (34)
The liquid-phase epitaxial growth of low net donor concentration (5 × 10 14 -5 × 10 15 /cm 3 ) GaSb for detector applications in the 1.3 - 1.6 µm region (1981) (34)
Luminescence of zinc doped solution grown gallium arsenide (1967) (34)
Very high quantum efficiency GaSb mesa photodetectors between 1.3 and 1.6 μm (1980) (33)
The gallium-arsenic-zinc system (1965) (32)
Isothermal LPE growth of thin graded band‐gap AlxGa1−xAs layers (1979) (32)
Semiconductor lasers fabricated by selective area epitaxy (1991) (32)
Redistribution of beryllium in InP and Ga0.47In0.53as grown by hydride source molecular beam epitaxy and metalorganic molecular beam epitaxy (1991) (31)
10 Gbit/s bipolar laser driver (1991) (30)
Thermodynamics of the Vaporization of Hf and HfO2: Dissociation Energy of HfO (1963) (30)
Gas source molecular beam epitaxy of InP, GaInAs and GaInAsP (1986) (29)
Gas Source Molecular Beam Epitaxy: Growth and Properties of Phosphorus Containing III-V Heterostructures (1993) (29)
Phase diagram of the system Al-Ga-P (1973) (28)
Base doping limits in heterostructure bipolar transistors (1990) (27)
Ultrathin semiconductor layer masks for high vacuum focused Ga ion beam lithography (1988) (26)
Electrical properties of Ge‐doped p‐type AlxGa1−xAs (1979) (26)
InGaAs/InP superlattice avalanche photodetectors grown by gas source molecular beam epitaxy (1986) (26)
Modification of intrinsic strain at lattice‐matched GaInAs/InP interfaces (1990) (26)
Structural characterization of GaInAs(P)/InP quantum well structures grown by gas source molecular beam epitaxy (1986) (25)
The Gallium‐Phosphorus‐Zinc Ternary Phase Diagram (1966) (24)
The influence of the electrical properties of the solid phase on impurity incorparation during crystal growth (1972) (23)
Optical and electrical properties of InP/InGaAs grown selectively on SiO2‐masked InP (1991) (23)
Ga–As–Si: Phase Studies and Electrical Properties of Solution‐Grown Si‐Doped GaAs (1970) (23)
GaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxy (1984) (23)
The Ga‐As‐Si Ternary Phase System (1966) (23)
Thermodynamic Properties of Molten and Solid Solutions of Silver Chloride and Sodium Chloride (1958) (23)
The GaGaAsGaP system: Phase chemistry and solution growth of GaAsχP1−χ (1969) (23)
1.55‐μm optical logic étalon with picojoule switching energy made of InGaAs/InP multiple quantum wells (1987) (22)
Influence of AlxGa1−xAs layer thickness on threshold current density and differential quantum efficiency for GaAs−AlxGa1−xAs DH lasers (1975) (21)
Photocurrent response of GaInAs/InP multiple quantum well detectors grown by gas source molecular beam epitaxy (1985) (21)
Direct observation of effective mass filtering in InGaAs/InP (1986) (20)
A focused ion beam vacuum lithography process compatible with gas source molecular beam epitaxy (1989) (19)
Metalorganic molecular beam epitaxial growth of InP/GaInAs multiquantum wells for infrared photodetection (1991) (19)
VAPORIZATION OF SEVERAL RARE EARTH OXIDES (1961) (19)
The Ternary Condensed Phase Diagram of the Ga‐As‐Te System (1967) (19)
Liquidus Isotherms in the Ga‐In‐As System (1970) (19)
Growth and properties of graded band‐gap AlxGa1−xAs layers (1979) (18)
λ≊1.5 μm InGaAsP ridge lasers grown by gas source molecular beam epitaxy (1984) (18)
Activities in the Chromium–Nickel System (1958) (18)
Measurement of heterojunction band offsets in InP/Ga0.47In0.53As by admittance spectroscopy (1987) (17)
High‐frequency study of nonequilibrium transport in heterostructure bipolar transistors (1989) (17)
The 1040°C solid solubility isotherm of zinc in GaP: The fermi level as a function of hole concentration (1968) (17)
Vapor Pressure of Silver. (1961) (16)
Vaporization of Iridium and Rhodium (1961) (16)
Heterostructure Junction Lasers (1974) (16)
Strained‐layer Ga1−xInxAs/InP avalanche photodetectors (1988) (16)
PHYSICAL PROPERTIES OF THE HALOGEN FLUORIDES. VI. THE CHLORINE TRIFLUORIDE- HYDROGEN FLUORIDE SYSTEM. SOME VAPOR PRESSURE AND CONDUCTANCE MEASUREMENTS (1957) (15)
Selective area growth of heterostructure bipolar transistors by metalorganic molecular beam epitaxy (1992) (15)
The Arsenic‐Rich Region of the Ga‐As‐Zn Ternary Phase System—Modification of the Ternary Diagram (1966) (15)
Heterostructure Lasers: Part B: Materials and Operating Characteristics (2012) (14)
Technical noteLuminescence of zinc doped solution grown GaAs: the effect of arsenic pressure (1968) (14)
Ultrahigh‐Speed Bipolar Transistors (1990) (14)
Thermodynamic Properties of Molten and Solid Solutions of Silver Chloride and Lithium Chloride (1959) (14)
Vaporization of Ruthenium and Osmium (1962) (14)
Sn incorporation into InP grown by molecular beam epitaxy: A secondary‐ion mass spectrometry study (1990) (14)
A New Class of Diode Lasers (1971) (13)
Very high tin doping of Ga0.47In0.53As by molecular beam epitaxy (1990) (13)
Epitaxial growth on optical gratings for distributed feedback GaAs injection lasers (1975) (13)
Blue Stark shift in modulation strained InGaAs/InP quantum wells (1990) (12)
Metalorganic molecular beam epitaxy of 1.3 μm quaternary layers and heterostructure lasers (1991) (12)
Observation of novel steplike structure in the photocurrent and dark current of a superlattice: Charge collection by successive depletion of quantum wells (1986) (12)
Photoinduced intersubband absorption in lattice-matched InGaAs/InP multiquantum well (1991) (11)
CHAPTER 7 – FABRICATION AND OPERATING CHARACTERISTICS (1978) (11)
Iodine Pentafluoride, Freezing and Boiling Point, Heat of Vaporization and Vapor Pressure-Temperature Relations1 (1954) (10)
A capillary liquid film technique for solution epitaxy of III–V compounds (1971) (10)
DECAY TIMES OF EXCITONS IN LATTICE-MATCHED INGAAS/INP SINGLE QUANTUM WELLS (1991) (10)
The Iodine Pentafluoride-Hydrogen Fluoride System. Solid-Liquid Equilibria, Vapor Pressures, Molar Volumes and Specific Conductances1 (1956) (10)
An OEIC Photoreceiver Using InP/InGaAs Heterojunction Bipolar Transistors at 10 Gb/s (1992) (9)
A thermodynamic evaluatin of the simple solution treatment of the Ga_P, In_P and Ga_As systems (1974) (9)
The Ga–As–Ge–Sn system: 800 °C liquidus isotherm and electrical properties of Ge–Sn‐doped GaAs (1973) (9)
Hybrid growth of InGaAsP double‐channel planar buried heterostructure lasers (1985) (9)
Vaporization of the Rare Earth Oxides (1961) (9)
p‐type doping of InP and Ga0.47In0.53As using diethylzinc during metalorganic molecular beam epitaxy (1991) (8)
5V, DC-12 GHz InP/InGaAs HBT amplifier (1990) (7)
Materials and operating Characteristics (1978) (7)
Observation of telegraph noise in the reverse photocapacitance, photocurrent, and forward dark current of a quantum‐well diode (1990) (7)
The Electric Moments of Some Acetylenic Halides, Alcohols, Ethers and Amines (1955) (6)
THE MAGNETIC SUSCEPTIBILITIES OF CHLORINE TRIFLUORIDE, BROMINE TRIFLUORIDE, BROMINE PENTAFLUORIDE AND IODINE PENTAFLUORIDE (1955) (6)
Temperature dependence of collector breakdown voltage and output conductance in HBT's with AlGaAs, GaAs, InP, and InGaAs collectors (1991) (6)
The Electrical Conductivity of Molten Silica (1959) (6)
Base doping effects in InGaAs/InP double heterostructure bipolar transistors (1986) (6)
Intersubband transitions in InGaAs/InP quantum wells studied by photomodulation spectroscopy (1992) (6)
High Temperature Knudsen Effusion Sampling System (1961) (5)
Distribution coefficient of P for growth of Ga1−xAlxAs1−yPy by LPE, determined using Auger spectroscopy (1976) (5)
Nanometer scale focused ion beam vacuum lithography using an ultrathin oxide resist (1991) (5)
The Pseudobinary System Ge ‐ GaAs (1966) (5)
Nonequilibrium electron dynamics in bipolar transistors (1989) (5)
InP-based heterostructure bipolar transistors (1989) (5)
Blue-Light Generation by Frequency Doubling of a Laser Diode in a Periodically Domain-Inverted LiTaO, Waveguide (1992) (4)
InP-based quantum-well infrared photodetectors (1991) (4)
High speed InGaAs HBT devices and circuits (1991) (4)
Diffusive base transport in narrow base InP/Ga/sub 0.47/In/sub 0.53/As heterojunction bipolar transistors (1991) (4)
Electronic energy levels in In x Ga 1-x As/InP strained-layer superlattices (1987) (4)
The Electric Moments of Some Allylic Compounds and of Some Simple Halides (1955) (3)
Scaled AlInAs/InGaAs and InP/InGaAs heterostructure bipolar transistors (1989) (3)
Beryllium δ doping studies in InP and Ga0.47In0.53As during metalorganic molecular beam epitaxy (1993) (3)
Wideband HBT circuits for operation above 10 GHz and power supply voltages below 5 V (1992) (3)
Precipitation Phenomena Associated with Ultra-High Be Doping in Ga 0.47 In 0.53 P Layers grown by MBE (1989) (2)
Structural Perfection of in GaAs/InP Superlattices Grown by Gas Source Molecular Beam Epitaxy: A High-Resolution X-Ray Diffraction Study (1987) (2)
InP/GaInAs composite collector heterostructure bipolar transistors and circuits (1993) (2)
Evolution of Roughness on InP Layers Observed by Scanning Force Microscopy (1993) (2)
Optical properties of InGaAs/InP semiconductor nanostructures (1990) (2)
II – The Use of the Phase Diagram in Investigations of the Properties of Compound Semiconductors (1970) (2)
Dynamical X-Ray Diffraction Studies of Interfacial Strain in Superlattices Grown by Molecular Beam Epitaxy (1991) (2)
THE VAPORIZATION AND PHYSICAL PROPERTIES OF CERTAIN REFRACTORIES. Quarterly Technical Summary Report No. 4 (1961) (2)
3 – Gas-Source Molecular Beam Epitaxy: GaxIn1−xAs1-yPy/InP MBE with Non-elemental Sources. Heterostructures and Device Properties (1995) (1)
Non-equilibrium transport in ultra-fast InGaAs/InP heterostructure bipolar transistors (1991) (1)
THE VAPORIZATION AND PHYSICAL PROPERTIES OF CERTAIN REFRACTORIES. PART II. EXPERIMENTAL STUDIES (1961) (1)
Chapter 5 Optical Properties of Ga1-xInxAs/InP Quantum Wells (1994) (1)
Physics and high speed devices (1990) (1)
X-RAY Diagnostics of Large-Period Lattice-Matched InGaAs/InP Superlattices (1992) (1)
PHASE EQUILIBRIA AND VAPOR PRESSURES IN THE GA+P SYSTEM (1974) (1)
THE VAPORIZATION AND PHYSICAL PROPERTIES OF CERTAIN REFRACTORIES. PART I. TECHNIQUES AND PRELIMINARY STUDIES (1960) (1)
InGaAs/InP multiple quantum-well long-wavelength photodetectors (1991) (1)
High Quality Epitaxial Growth on in-Situ Patterned Inp Substrates (1989) (1)
Selective growth of InP/GaInAs heterostructures using metalorganic molecular beam epitaxy (2008) (1)
A STUDY OF THE MOLECULAR SPECIES EVAPORATING FROM CONDENSED PHASES AT HIGH TEMPERATURES AND THE MEASUREMENT OF CERTAIN PHYSICAL PROPERTIES OF REFRACTORIES AT HIGH TEMPERATURES. Quarterly Technical Summary Report No. 2 (1960) (1)
Be doping of InP and GaInAs during metalorganic molecular beam epitaxy (1991) (1)
A hot electron InP/InGaAs heterostructure bipolar transistor with f/sub T/ of 110 GHz (1988) (1)
Doping During GSMBE (1993) (0)
PHYSICAL PROPERTIES OF THE HALOGEN FLUORIDES. IV. THE IODINE PENTAFLUORIDE- HYDROGEN FLUORIDE SYSTEM. SOLID-LIQUID EQUILIBRIA, VAPOR PRESSURES, MOLAR VOLUMES, AND SPECIFIC CONDUCTANCES (1955) (0)
Influence of Al/sub x/Ga/sub 1-x/As layer thickness on threshold current density and differential quantum efficiency for GaAs--Al/sub x/Ga/sub 1-x/As DH lasers (1975) (0)
Spectral Behavior and Linewidth of (GaAl)As-GaAs Double-Heterostructure Lasers at Room Temperature With Stripe Geometry Configuration (1973) (0)
A Limitation on Repetition Rate of Pulsations of Junction Lasers Due to the Repetitively 9-Switched Mechanism (1973) (0)
Characterization of Heterostructures by High Resolution X-ray Diffraction (1993) (0)
Properties of double heterostructure injection lasers: Continuous room-temperature operation (1970) (0)
Carrier Transport Across Quantum Wells and Superlattices (1993) (0)
InGaAs/InP quantum wells with periodic thickness variation (1994) (0)
Molecular Beam Epitaxy Systems and Procedures (1993) (0)
Ultrahigh-speed Dipolar Transistors (2007) (0)
PHYSICAL PROPERTIES OF THE HALOGEN FLUORIDES AND OF HALOGEN FLUORIDE- HYDROGEN FLUORIDE SYSTEMS. I. VAPOR PRESSURES OF HALOGEN FLUORIDE-HYDROGEN FLUORIDE SYSTEMS. II. SOLID-LIQUID EQUILIBRIA IN HALOGEN FLUORIDE-HYDROGEN FLUORIDE SYSTEMS. III. DENSITIES OF HALOGEN FLUORIDE-HYDROGEN FLUORIDE SOLUTIONS (1954) (0)
Recent Developments In Gas Source Molecular Beam Epitaxy (1989) (0)
Ultrathin MBE-Grown Semiconductor Layer Masks For Focused Ga-Ion Beam Lithography (1988) (0)
Optical Transitions in Strained Layer InxGa1−xAs/InP Quantum Wells (1989) (0)
VIA-2 high-gain InP/InGaAs n-p-n heterojunction bipolar transistors grown by gas-source MBE (1986) (0)
Gas Source Molecular Beam Epitaxy (1985) (0)
Optical Properties of Quantum Wells (1993) (0)
A 10 Gb/s laser driver in InP/InGaAs HBT technology (1990) (0)
Abstract of articles to be published in the journal of the physics and chemistry of solidsThe solid solubility limits of zinc in GaAs at 1000°C (1967) (0)
Epitaxial Semiconductor Structures for the Infrared: Where Are We Now? (1986) (0)
Erratum: Metalorganic molecular beam epitaxial growth of InP/GaInAs multiquantum wells for infrared photodetection [Appl. Phys. Lett. 59, 552 (1991)] (1991) (0)
Structure and Characteristics of Multilayer (GaAs-AlxGa1-xAs) Double Heterostructure Injection Lasers (1970) (0)
THERMODYNAMICS OF CERTAIN REFRACTORY COMPOUNDS. PART II. CONTINUED THEORETICAL AND EXPERIMENTAL STUDIES ON AN EXTENDED LIST. Quarterly Progress Report No. 5, June 1, 1963 to August 31, 1963 (1963) (0)
The Generation of Atomic and Molecular Beams for Elemental and Gas Source Molecular Beam Epitaxy (1993) (0)
In-Situ Processing and Selective Area Epitaxy (1993) (0)
THERMODYNAMICS OF CERTAIN REFRACTORY COMPOUNDS. PART II. CONTINUED THEORETICAL AND EXPERIMENTAL STUDIES ON AN EXTENDED LIST. Second Quarterly Progress Report, September 1 to November 30, 1963 (1962) (0)

This paper list is powered by the following services:

Morton B. Panish's Academic­Influence.com Rankings

Morton B. Panish's Degrees

Why Is Morton B. Panish Influential?

Morton B. Panish's Published Works

Published Works

Morton B. Panish's AcademicInfluence.com Rankings