Nikolai N. Ledentsov
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Physics
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(Suggest an Edit or Addition)Nikolai N. Ledentsov's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Quantum dot heterostructures (1999) (2078)
- Low threshold, large To injection laser emission from (InGa)As quantum dots (1994) (716)
- Energy relaxation by multiphonon processes in InAs/GaAs quantum dots (1997) (396)
- InGaAs-GaAs quantum-dot lasers (1997) (381)
- InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm (1999) (341)
- Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers (1996) (300)
- RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS (1995) (288)
- The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers (2004) (238)
- Epitaxy of Nanostructures (2003) (218)
- Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers (2001) (205)
- Quantum dot lasers: breakthrough in optoelectronics (2000) (204)
- CARRIER DYNAMICS IN TYPE-II GASB/GAAS QUANTUM DOTS (1998) (202)
- Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots (1996) (193)
- Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors (2000) (191)
- InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm (2000) (184)
- Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing (1996) (182)
- Excited states in self‐organized InAs/GaAs quantum dots: Theory and experiment (1996) (180)
- High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser (2005) (154)
- High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers (2005) (150)
- High performance quantum dot lasers on GaAs substrates operating in 1.5 /spl mu/m range (2003) (149)
- Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s (2009) (138)
- Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing (1996) (137)
- InAs/InGaAs/GaAs quantum dot lasers of 1.3 /spl mu/m range with high (88%) differential efficiency (2002) (137)
- Strain engineering of self-organized InAs quantum dots (2001) (128)
- Vertical correlations and anticorrelations in multisheet arrays of two-dimensional islands (1998) (123)
- 81 fJ/bit energy-to-data ratio of 850 nm vertical-cavity surface-emitting lasers for optical interconnects (2011) (122)
- 1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition (1999) (121)
- InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain (2003) (119)
- Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix (1998) (114)
- Vertical cavity lasers based on vertically coupled quantum dots (1997) (114)
- Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate (1999) (114)
- Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates (1999) (114)
- Prevention of gain saturation by multi-layer quantum dot lasers (1996) (109)
- Complete suppression of filamentation and superior beam quality in quantum-dot lasers (2003) (106)
- Single-mode submonolayer quantum-dot vertical-cavity surface-emitting lasers with high modulation bandwidth (2006) (103)
- Long-wavelength quantum-dot lasers on GaAs substrates: from media to device concepts (2002) (102)
- Quantum dot origin of luminescence in InGaN-GaN structures (2002) (100)
- InAs/GaAs quantum dots radiative recombination from zero‐dimensional states (1995) (97)
- Growth, Spectroscopy, and Laser Application of Self-Ordered III-V Quantum Dots (1998) (96)
- Self-organization processes in MBE-grown quantum dot structures (1995) (95)
- Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices (2001) (90)
- Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high‐index surfaces (1994) (88)
- 3.9 W CW power from sub-monolayer quantum dot diode laser (1999) (87)
- 56 fJ dissipated energy per bit of oxide-confined 850 nm VCSELs operating at 25 Gbit/s (2012) (85)
- Gain characteristics of quantum dot injection lasers (1999) (79)
- Optical anisotropy in vertically coupled quantum dots (1999) (78)
- Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix (1996) (75)
- High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser (1998) (75)
- Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states (2004) (74)
- 0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots (2000) (73)
- Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-μm-wavelength at room temperature (2001) (72)
- Optical properties of InAs quantum dots in a Si matrix (1999) (72)
- Novel concepts for injection lasers (2002) (72)
- InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T 0= 385 K) Grown by Metal Organic Chemical Vapour Deposition (1997) (71)
- Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots (1999) (68)
- Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser (2001) (68)
- Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser (1999) (67)
- Character of the Cd distribution in ultrathin CdSe layers in a ZnSe matrix (2000) (65)
- Low-threshold injection lasers based on vertically coupled quantum dots (1997) (64)
- Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface (1995) (63)
- 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy (2001) (60)
- 120°C 20 Gbit/s operation of 980 nm VCSEL (2008) (60)
- Distortion-free optical amplification of 20-80 GHz modelocked laser pulses at 1.3 [micro sign]m using quantum dots (2006) (60)
- On ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers (2004) (59)
- InAs‐GaAs quantum dots: From growth to lasers (1996) (58)
- On gain saturation in quantum dot semiconductor optical amplifiers (2005) (57)
- Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm (1999) (57)
- 107.5 Gb/s 850 nm multi- and single-mode VCSEL transmission over 10 and 100 m of multi-mode fiber (2016) (56)
- Volmer–Weber and Stranski–Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm (2000) (56)
- LETTER TO THE EDITOR: High performance narrow stripe quantum-dot lasers with etched waveguide (2003) (54)
- 1.3 µm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition (2000) (53)
- 3.5 W CW operation of quantum dot laser (1999) (52)
- Formation of InAs quantum dots on a silicon (100) surface (1998) (49)
- Effect of excited-state transitions on the threshold characteristics of a quantum dot laser (2000) (49)
- Frequency response of large aperture oxide-confined 850 nm vertical cavity surface emitting lasers (2009) (48)
- Formation of coherent superdots using metal‐organic chemical vapor deposition (1996) (47)
- MBE-grown metamorphic lasers for applications at telecom wavelengths (2007) (46)
- Midinfrared emission from near-infrared quantum-dot lasers (2000) (46)
- High-power monolithic passively modelocked quantum-dot laser (2005) (45)
- Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands (1999) (44)
- High-power single mode (>1W) continuous wave operation of longitudinal photonic band crystal lasers with a narrow vertical beam divergence (2008) (43)
- Transform-limited optical pulses from 18 GHz monolithic modelocked quantum dot lasers operating at ∼1.3 µm (2004) (43)
- Control of the emission wavelength of self-organized InGaAs quantum dots: main achievements and present status (1999) (42)
- Progress in Epitaxial Growth and Performance of Quantum Dot and Quantum Wire Lasers (2008) (42)
- Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET-type structures on GaAs substrates (2004) (41)
- Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots (2006) (40)
- 20 Gb/s 85$^{\circ}$C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots (2006) (40)
- Spectral and dynamic properties of InAs-GaAs self-organized quantum-dot lasers (1999) (40)
- Progress in Quantum Dot Lasers: 1100 nm, 1300 nm, and High Power Applications (2000) (39)
- Optical orientation and alignment of excitons in quantum dots (1998) (39)
- Arrays of 850 nm photodiodes and vertical cavity surface emitting lasers for 25 to 40 Gbit/s optical interconnects (2012) (39)
- Reversibility of the island shape, volume and density in Stranski-Krastanow growth (2001) (37)
- Optical and structural properties of self-organized InGaAsN/GaAs nanostructures (2001) (37)
- Temperature-Dependent Small-Signal Analysis of High-Speed High-Temperature Stable 980-nm VCSELs (2009) (36)
- Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate (2000) (36)
- Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures (1999) (34)
- Improved catastrophic optical mirror damage level in InGaAs/AlGaAs laser diodes (2000) (34)
- Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy (1999) (34)
- Growth of self-organized quantum dots for optoelectronics applications: nanostructures, nanoepitaxy, defect engineering (2003) (34)
- High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence (2005) (33)
- Novel infrared quantum dot lasers : Theory and reality (2001) (33)
- Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE (2003) (32)
- LOW THRESHOLD QUANTUM DOT INJECTION LASER EMITTING AT 1.9MU M (1998) (32)
- High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system (2005) (32)
- Ultra-High-Bandwidth (>35 GHz) Electrooptically-Modulated VCSEL (2006) (32)
- High-Power Low-Beam Divergence Edge-Emitting Semiconductor Lasers with 1- and 2-D Photonic Bandgap Crystal Waveguide (2008) (31)
- Hot carrier relaxation in InAs/GaAs quantum dots (1998) (31)
- High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates (2004) (30)
- POLARIZATION SPLITTING OF THE GAIN BAND IN QUANTUM WIRE AND QUANTUM DOT ARRAYS (1999) (30)
- High-Speed Quantum-Dot Vertical-Cavity Surface-Emitting Lasers (2007) (30)
- Reliability performance of 25 Gbit s−1 850 nm vertical-cavity surface-emitting lasers (2013) (29)
- Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures (2002) (29)
- Fine structure of excitonic levels in quantum dots (1997) (29)
- Electronic structure and energy relaxation in strained InAs/GaAs quantum pyramids (1996) (28)
- Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots (1998) (28)
- Response to “Comment on ‘Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix’ ” [Appl. Phys. Lett. 70, 2765 (1997)] (1997) (28)
- Wavelength-stabilized tilted cavity quantum dot laser (2004) (28)
- Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes (2008) (28)
- Thermodynamic analysis of segregation effects in molecular beam epitaxy (1990) (27)
- Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C (1997) (27)
- Molecular beam epitaxial growth of {InSb}/{GaAs(100) } and {InSb}/{Si(100) } heteroepitaxial layers (thermodynamic analysis and characterization) (1995) (26)
- Quantum dots for VCSEL applications at (2002) (26)
- Accelerated aging of 28 Gb s−1 850 nm vertical-cavity surface-emitting laser with multiple thick oxide apertures (2015) (26)
- Injection lasers based on InGaAs quantum dots in an AlGaAs matrix (1998) (26)
- An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix (1996) (26)
- The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix (2002) (25)
- High bit rate and elevated temperature data transmission using InGaAs quantum-dot lasers (2004) (25)
- Thermodynamic analysis of segregation effects in MBE of AIII−BV compounds (1991) (25)
- Interplay of beryllium segregation and diffusion in heavily doped GaAs and AlGaAs grown by molecular beam epitaxy (thermodynamic analysis) (1991) (25)
- Tilted Wave Lasers: A Way to High Brightness Sources of Light (2011) (25)
- High-Speed DMT and VCSEL-Based MMF Transmission Using Pre-Distortion (2018) (24)
- Strain-induced formation and tuning of ordered nanostructures on crystal surfaces (1996) (24)
- High external differential efficiency and high optical gain of long-wavelength quantum dot diode laser (2003) (24)
- Lateral-cavity spectral hole burning in quantum-dot lasers (2002) (24)
- Interconnection between gain spectrum and cavity mode in a quantum-dot vertical-cavity laser (1999) (23)
- Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix (1997) (23)
- GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report (2000) (23)
- Single mode cw operation of 658nm AlGaInP lasers based on longitudinal photonic band gap crystal (2006) (22)
- Quantum dot lasers: The birth and future trends (1999) (22)
- Exciton-induced enhancement of optical waveguide confinement in (Zn,Cd)(Se,S) quantum well laser heterostructures (1994) (21)
- Properties of strained (In, Ga, Al)As lasers with laterally modulated active region (1997) (21)
- Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics (2001) (21)
- Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode (2003) (20)
- Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots (1998) (20)
- Long-wavelength quantum dot lasers on GaAs substrates (2000) (20)
- Optical spectroscopy of self-organized nanoscale hetero-structures involving high-index surfaces (1995) (20)
- Single transverse mode operation of long wavelength (/spl sim/1.3 /spl mu/m) InAsGaAs quantum dot laser (1999) (19)
- QD lasers: physics and applications (2005) (19)
- Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates (1999) (19)
- High-Brightness and Ultranarrow-Beam 850-nm GaAs/AlGaAs Photonic Band Crystal Lasers and Single-Mode Arrays (2009) (19)
- Quantum dot based photonic devices at 1.3 µm: Direct modulation, mode-locking, SOAs and VCSELs (2006) (19)
- STM and RHEED study of InAsGaAs quantum dots obtained by submonolayer epitaxial techniques (1996) (18)
- Size quantization by faceting in (110)‐oriented GaAs/AlAs heterostructures (1992) (18)
- Light confinement in a quantum dot (2000) (18)
- Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates (2000) (18)
- Effect of growth kinetics on the InAs/GaAs quantum dot arrays formation on vicinal surfaces (1997) (18)
- Radiation characteristics of injection lasers based on vertically coupled quantum dots (1997) (17)
- Photoluminescence of InSb quantum dots in GaAs and GaSb matrices (1997) (17)
- Self-organized InAs quantum dots in a silicon matrix (1999) (17)
- Surface-mode lasing from stacked InGaN insertions in a GaN matrix (1999) (17)
- Entropy‐Driven Effects in Self‐Organized Formation of Quantum Dots (2001) (17)
- Gain characteristics of quantum-dot injection lasers (1999) (16)
- Quantum dots formed by activated spinodal decomposition of InGa(Al)As alloy on InAs stressors (2000) (16)
- Reliability study of InAs/InGaAs quantum dot diode lasers (2005) (16)
- Electronic Properties of InAs/GaAs Quantum Dots Covered by an InxGa1–xAs Quantum Well (2001) (16)
- Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W (1997) (16)
- Design considerations for large-aperture single-mode oxide-confined vertical-cavity surface-emitting lasers (2012) (16)
- Mode-locked quantum dot lasers for picosecond pulse generation (2004) (16)
- Effect of the quantum-dot surface density in the active region on injection-laser characteristics (1998) (16)
- High-power one-, two-, and three-dimensional photonic crystal edge-emitting laser diodes for ultra-high brightness applications (2008) (16)
- Narrow vertical beam divergence laser diode based on longitudinal photonic band crystal waveguide (2003) (16)
- Edge and vertical cavity surface emitting InAs quantum dot lasers (1998) (16)
- Exciton resonance reflection from quantum well, quantum wire and quantum dot structures (1992) (15)
- Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures (1999) (15)
- 20 Gb/s 85 °C Error Free Operation of VCSEL based on Submonolayer Deposition of Quantum Dots (2006) (15)
- Long-wavelength (1.3-1.5 micron) quantum dot lasers based on GaAs (2004) (15)
- Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition (2000) (15)
- Lasing at 1.5 µm in quantum dot structures on GaAs substrates (2003) (15)
- 1.3 µm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices (2001) (15)
- An intermediate (1.0 1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy (1996) (14)
- CONFERENCES AND SYMPOSIA: Scientific session of the Division of General Physics and Astronomy of the Russian Academy of Sciences (January 29, 1997) (1997) (14)
- Exciton polaritons in a cylindrical microcavity with an embedded quantum wire. (2000) (14)
- Ordered quantum-dot arrays in semiconducting matrices (1996) (14)
- High power GaInP/AlGaInP visible lasers (λ = 646 nm) with narrow circular shaped far-field pattern (2005) (14)
- 10.7w peak power picosecond pulses from high-brightness photonic band crystal laser diode (2010) (14)
- Self-organized quantum wires and dots: New opportunities for device applications (1997) (14)
- Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures (2004) (14)
- Electromagnetic response of 3D arrays of quantum dots (2000) (14)
- Semiconductor quantum dots for application in diode lasers (1998) (13)
- High-Speed Quantum Dot Lasers and Amplifiers for Optical Data Communication (2006) (13)
- Impact of the mesa etching profiles on the spectral hole burning effects in quantum dot lasers (2004) (13)
- Size and shape effects in electromagnetic response of quantum dots and quantum dot arrays (2001) (13)
- Electronic properties of semiconductor quantum-wire structures directly grown on (311) surfaces (1992) (13)
- Low divergence edge‐emitting laser with asymmetric waveguide based on one‐dimensional photonic crystal (2005) (13)
- Optical Properties of Structures with Single and Multiple InGaN Insertions in a GaN Matrix (1999) (13)
- Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at ∼ 1.3 mm (2000) (12)
- Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces (2014) (12)
- Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence (2006) (12)
- Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasers (1999) (12)
- Room-temperature yellow-orange (In,Ga,Al)P-GaP laser diodes grown on (n11) GaAs substrates. (2018) (12)
- Fabrication of InAs quantum dots on silicon (1998) (12)
- Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy (1998) (12)
- Digital data transmission using electro-optically modulated vertical-cavity surface-emitting laser with saturable absorber (2014) (11)
- Nanofaceting and alloy decomposition: From basic studies to advanced photonic devices (2006) (11)
- Formation of Stacked Self-Assembled InAs Quantum Dots in GaAs Matrix for Laser Applications (1995) (11)
- Resonant spin-flip Raman scattering and localized exciton luminescence in submonolayer InAs-GaAs structures (1996) (11)
- Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm (1998) (11)
- RT lasing and efficient optical confinement in CdSe/ZnMgSSe submonolayer superlattices (1998) (11)
- Luminescence properties of semiconductor quantum dots (1997) (11)
- A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate (2000) (11)
- Formation of InGaAs/GaAs quantum dots by submonolayer molecular beam epitaxy (1995) (11)
- Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region (2005) (11)
- Long-wavelength lasers based on metamorphic quantum dots (2005) (11)
- The emission from the structures with arrays of coupled quantum dots grown by the submonolayer epitaxy in the spectral range of 1.3–1.4 µm (2000) (11)
- Optical mode engineering and high power density per facet length (>8.4 kW/cm) in tilted wave laser diodes (2016) (11)
- Formation of self-organized quantum dots at semiconductor surfaces (1998) (11)
- Single transverse mode 850 nm GaAs/AlGaAs lasers with narrow beam divergence (2006) (10)
- GaAs-Based InAs/InGaAs Quantum Dot Vertical Cavity and Vertical External Cavity Surface Emitting Lasers Emitting Near 1300 nm (2005) (10)
- Nonequilibrium room-temperature carrier distribution in InAs quantum dots overgrown with thin AlAs/InAlAs layers (2005) (10)
- Structural and optical properties of InAs quantum dots in AlGaAs matrix (2003) (10)
- Application of self-organized quantum dots to edge emitting and vertical cavity lasers (1998) (10)
- Properties of InGaAsN heterostructures emitting at 1.3–1.55 µm (2005) (10)
- Intrinsic optical confinement and lasing in InAs–AlGaAs submonolayer superlattices (1999) (10)
- CONFERENCES AND SYMPOSIA: The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells (1999) (10)
- High-power single-mode 1.3-μm lasers based on InAs/AlGaAs/GaAs quantum dot heterostructures (2004) (10)
- Miniband transport in a GaAs/AlAs superlattice with submonolayer barriers in a static and THz electric field (2000) (10)
- Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates (2003) (9)
- Calculation of the size-quantization levels in strained ZnCdSe/ZnSe quantum wells (1997) (9)
- Quantum dots formed by ultrathin insertions in wide-gap matrices (2000) (9)
- New-generation vertically emitting lasers as a key factor in the computer communication era (2011) (9)
- Novel approaches to semiconductor lasers (2002) (9)
- Optical properties of InAlAs quantum dots in an AlGaAs matrix (1998) (9)
- 850 nm VCSELs for up to 40 Gbit/s short reach data links (2010) (9)
- Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture (2012) (9)
- Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix (1999) (9)
- Investigation of MOVPE-grown GaN layers doped with As atoms (1999) (9)
- High--power ultrashort pulses output from a modelocked two-section quantum-dot laser (2004) (9)
- Lateral association of vertically coupled quantum dots (1997) (9)
- Analysis of the local indium composition in ultrathin InGaN layers (2007) (9)
- Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition (1999) (9)
- v Accelerated Online Publication LASERS, OPTICS, AND OPTOELECTRONICS 2971 Microscopic quantum theory of spatially resolved photoluminescence in semiconductor quantum structures (2004) (8)
- Modeling of photonic-crystal-based high-power high-brightness semiconductor lasers (2010) (8)
- Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 µm (1998) (8)
- High-power wavelength stabilized 970nm tilted cavity laser with a 41.3dB side mode suppression ratio (2007) (8)
- Formation of three-dimensional islands in subcritical layer deposition in Stranski-Krastanow growth. (2013) (8)
- Heteroepitaxial growth of InAs on Si: A new type of quantum dot (1999) (8)
- Gain in injection lasers based on self-organized quantum dots (1999) (8)
- Energy efficient 850 nm VCSELs operating error-free at 25 Gb/s over multimode optical fiber up to 600 m (2012) (8)
- Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C (2019) (8)
- Comparative analysis of long-wavelength (1.3 µm) VCSELs on GaAs substrates (2001) (8)
- 1.75 μm emission from self-organized InAs quantum dots on GaAs (1999) (8)
- Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm (2003) (8)
- PHOTOPUMPED INGAN/GAN/ALGAN VERTICAL CAVITY SURFACE EMITTING LASER OPERATING AT ROOM TEMPERATURE (1999) (8)
- Tilted cavity laser (Critical Review Lecture) (2004) (8)
- 3D Arrays of Quantum Dots for Laser Applications (1996) (7)
- Passive cavity laser and tilted wave laser for Bessel-like beam coherently coupled bars and stacks (2015) (7)
- Long-term stability of long-wavelength (>1.25 µm) quantum-dot lasers fabricated on GaAs substrates (2003) (7)
- Spontaneous formation of nanostructures on crystal surfaces (2001) (7)
- Modulation of a quantum well potential by a quantum-dot array (1997) (7)
- Effect of deposition conditions on the formation of (In,Ga)As quantum clusters in a GaAs matrix (1994) (7)
- InAs/GaAs quantum dot lasers (1996) (7)
- Strained-submonolayer and quantum-dot superstructures (1995) (7)
- Spontaneous Formation of Arrays of Strained Islands: Thermodynamics Versus Kinetics (1999) (7)
- Resonant photoluminescence from modulation-doped InAs-GaAs quantum dots (1997) (7)
- Heterostructure for UV LEDs Based on Thick AlGaN Layers (1998) (7)
- Self-organized growth of semiconductor nanostructures for novel light emitters (2000) (7)
- Edge-emitting InGaAs/GaAs lasers with deeply etched semiconductor/air distributed Bragg reflector mirrors (2002) (7)
- (In,Ga,Al)P–GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range (2017) (7)
- Coulomb Interaction between Carriers Localized in InAs/GaAs Quantum Dots and on Point Defects (1997) (6)
- Magneto-optical properties of InAs monolayers and InyAl1−yAs self-assembled quantum dots in Ga(Al)As matrices (1996) (6)
- Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement (1997) (6)
- 54 Gbps OOK transmission using single mode VCSEL up to 1 km OM4 MMF (2016) (6)
- 1.55–1.6 μm electroluminescence of GaAs based diode structures with quantum dots (2001) (6)
- GaSb quantum dot growth using InAs quantum dot stressors (2003) (6)
- Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range (2000) (6)
- Optical anisotropy of GaAs/AlAs superlattices grown in the [113] direction (1994) (6)
- 850 nm single mode VCSEL-based 25Gx16 transmitter/receiver boards for parallel signal transmission over 1 km of multimode fiber (2015) (6)
- Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation (2006) (6)
- Optical properties of submonolayer germanium clusters formed by molecular-beam epitaxy in a silicon matrix (2001) (6)
- Miniband transport in a semiconductor superlattice with submonolayer barriers (1999) (6)
- Excition relaxation in self-organized InAs/GaAs quantum dots (1996) (6)
- Impact of Carrier Lateral Transport and Surface Recombination on the PL Efficiency of Mesas with Self‐Organized Quantum Dots (2001) (6)
- 3.5 W continuous wave operation from quantum dot laser (2000) (6)
- Thermal stability of vertically coupled InAs-GaAs quantum dot arrays (1997) (6)
- Optical properties of structures with ultradense arrays of Ge QDs in an Si matrix (2003) (6)
- Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys (2003) (6)
- Spontaneous ordering of semiconductor nanostructures (1997) (6)
- Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs (2006) (6)
- Scientific session of the Division of General Physics and Astronomy of the Russian Academy of Sciences (31 January, 2001) (2001) (5)
- Barrier-disorder induced exciton relaxation via LO-phonons in GaAs/AlxGa1−xAs multiple quantum wells (1992) (5)
- Design optimization for bright electrically-driven quantum dot single-photon sources emitting in telecom O-band. (2021) (5)
- Growth, characterizations, theory and lasing of vertically stacked quantum dots (1996) (5)
- 120 °C 20 Gbit/s operation of 980 nm single mode VCSEL (2008) (5)
- Ultrathin layers and short-period superlattices in semiconductor structures (1990) (5)
- High-performance of single mode InAs/InGaAs/GaAs quantum dot lasers of 1.3-micron range (2003) (5)
- Lateral association of vertically-coupled quantum dots (1998) (5)
- Radiative Inter‐Sublevel Transitions in InGaAs/AlGaAs Quantum Dots (2001) (5)
- Quantum dot photonics: edge emitter, amplifier and VCSEL (2005) (5)
- Leakage-Assisted Transverse Mode Selection in Vertical-Cavity Surface-Emitting Lasers With Thick Large-Diameter Oxide Apertures (2013) (5)
- Transform-limited optical pulses from 18GHz monolithic modelocked quantum dot lasers operating at similar to 1.3 mu m (2004) (5)
- Quantum Dot Amplifiers for 100 Gbit Ethernet (2006) (5)
- Quantum wires and quantum dots on corrugated (311) surfaces: potential applications in optoelectronics (2002) (5)
- Quantum Dot Devices and Computing (2002) (5)
- Identification of radiative recombination channels in quantum dot structures (1996) (5)
- Size-selective optically excited capacitance transient spectroscopy of InAs=GaAs quantum dots (2002) (5)
- Devices Based on Epitaxial Nanostructures (2004) (5)
- Metamorphic modulation-doped InAlAs/InGaAs/InAlAs heterostructures with high electron mobility grown on gaas substrates (2003) (5)
- Effect of growth conditions on InAs nanoislands formation on Si(100) surface (1999) (5)
- Mode-locking at 9.7 GHz repetition rate with 1.7 ps pulse duration in two-section QD lasers (2004) (5)
- Lasing wavelength of quantum dot heterostructures controlled within the 1.3–0.85 μm range by means of high-temperature annealing (2004) (5)
- Response to Comment: ‘‘Comment on ‘Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high‐index surfaces’ ’’ [Appl. Phys. Lett. 66, 111 (1995)] (1995) (5)
- Quantum dot lasers: Theory and experiment (2001) (5)
- Quantum-dot injection heterolaser with 3.3 W output power (1999) (5)
- Design and technology of vertical-cavity surface-emitting lasers with nonconducting epitaxial mirrors (2003) (5)
- Erratum: Carrier dynamics in type-II GaSb/GaAs quantum dots [Phys. Rev. B 57 , 4635 (1998)] (1998) (4)
- Carrier relaxation mechanisms and Fermi versus non-Fermi carrier distribution in quantum dot arrays formed by activated alloy phase separation (2000) (4)
- Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots (2000) (4)
- Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure (1997) (4)
- Edge and surface-emitting tilted cavity lasers (Invited Paper) (2005) (4)
- InAs-GaAs Quantum Dot Lasers: in Situ Growth, Radiative Lifetimes and Polarization Properties (1995) (4)
- Passive cavity surface-emitting lasers: option of temperature-insensitive lasing wavelength for uncooled dense wavelength division multiplexing systems (2016) (4)
- Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates (1998) (4)
- 20-Gb/s direct modulation of 980 nm VCSELs based on submonolayer deposition of quantum dots (2006) (4)
- Transient-four-wave-mixing studies of GaAs micro-crystallites (1994) (4)
- Quantum-dot lasers: Principal components of the threshold current density (1997) (4)
- Multi-mode to single-mode switching caused by self-heating in bottom-emitting intra-cavity contacted 960 nm VCSELs (2012) (4)
- Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots (2007) (4)
- Morphology evolution in strain-compensated multiple quantum well structures (2014) (4)
- APPLICATIONS OF QUANTUM DOTS IN SEMICONDUCTOR LASERS (2002) (4)
- Structural characterization of self-organized nanostructures (1998) (4)
- Robustness versus thermal effects of single-mode operation of vertical-cavity surface-emitting lasers with engineered leakage of high-order transverse optical modes (2017) (4)
- MOCVD-grown AlGaN/GaN heterostructures with high electron mobility (2004) (4)
- Long-wavelength lasers using GaAs-based quantum dots (2002) (4)
- Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices (2001) (4)
- Photoluminescence of localized excitons in InGan quantum dots (2008) (4)
- Temperature dependent output characteristics of p-doped 1.1 and 1.3 μm quantum dot lasers (2005) (4)
- Raman study of GaAs quantum wires grown with partial filling of corrugated (311)A AlAs surfaces (2002) (4)
- Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties (2001) (4)
- Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells (2002) (3)
- Ultimate modulation bandwidth of 850 nm oxide-confined vertical-cavity surface-emitting lasers (2015) (3)
- Vertical Cavity Surface — Emitting Lasers using InGaN Quantum Dots (1999) (3)
- Lasing in Vertical Direction in Structures with InGaN Quantum Dots (2000) (3)
- Optical and Structural Properties of Quantum Dots in Wide‐Bandgap Semiconductors (2001) (3)
- HETEROEPITAXIAL GROWTH OF InAs ON Si : THE NEW TYPE OF QUANTUM DOTS (3)
- Epitaxial growth of quantum-dot heterostructures on metamorphic buffers (2005) (3)
- 1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them (2001) (3)
- Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement (1997) (3)
- MBE-grown ultra-large aperture single-mode vertical-cavity surface-emitting laser with all-epitaxial filter section (2007) (3)
- Mode locking of InGaAs quantum dot lasers (2004) (3)
- Room-temperature 1.3-μm lasing in a microdisk with quantum dots (2006) (3)
- Resonant Raman scattering studies of multilayer (In, Ga, Al) (As, Sb) heterostructures with InAs quantum wells (1994) (3)
- Structural and optical properties of InAlN/GaN distributed Bragg reflectors (2010) (3)
- Influence of carrier statistics on InGaN/GaN device performance (2004) (3)
- Optical anisotropy of InAs quantum dots (2010) (3)
- Reduction of Defect Density in Structures With InAs-GaAs Quantum Dots Grown at Low Temperature for 1.55 [.proportional]m Range. (2001) (3)
- The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3–1.55 μm (2005) (3)
- Optical properties of submonolayer CdSe-(Zn,Mg)(S,Se) structures (1997) (3)
- Stable modelocked operation from a quantum-dot laser in a broad temperature range (2005) (3)
- Continuous wave 1.3 /spl mu/m InAs-InGaAs quantum dot VCSELs on GaAs substrates (2001) (3)
- Growth and Characterization of Coherent Quantum Dots Grown by Single- and Multi-Cycle Metal-Organic Chemical Vapour Deposition (1997) (3)
- Tem Structural Characterization of Nm-Scale Islands in Highly Mismatched Systems (1996) (3)
- Time‐Resolved Studies of InGaN/GaN Quantum Dots (2002) (3)
- Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region (1998) (3)
- Design considerations for large-aperture single-mode oxide-confined VCSELs (2013) (3)
- 1.3-1.5 μm quantum dot lasers on foreign substrates: growth using defect reduction technique, high-power CW operation, and degradation resistance (2006) (3)
- Comments on "Lasing at three-dimensionally quantum-confined sublevel of self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots by current injection" [and reply] (1996) (3)
- MBE Growth and Characterization of Composite InAlAs/In(Ga)As Vertically Aligned Quantum Dots (1999) (3)
- Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells (2001) (3)
- Gain studies and lasing in excitonic waveguides of II–VI submonolayer structures (1998) (3)
- Enhanced exciton binding energy in InAs monolayers grown on (311)A GaAs substrates (1996) (3)
- Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures (1999) (3)
- Surface-phase equilibria in MBE of strained In1-xGaxAs heteroepitaxcial layers (2006) (2)
- OPTOELECTRONIC DEVICES BASED ON QUANTUM DOTS (2007) (2)
- Quantum dots for GaAs-based surface emitting lasers at 1300 nm (2000) (2)
- Vertical-cavity emitting devices with quantum-dot structures (2001) (2)
- Ultimate Control of the Thermal Shift of a Tilted Cavity Laser Wavelength (2007) (2)
- Semiconductor quantum-dot lasers and amplifiers (2002) (2)
- Ultralow threshold long wavelength single-mode quantum dot VCSELs on GaAs substrates (2005) (2)
- Power conversion efficiency of quantum dot laser diodes (2000) (2)
- Effect of heat-treatment conditions on the surface morphology of gallium arsenide grown on vicinal GaAs (100) substrates by molecular-beam epitaxy (1994) (2)
- Self-Organization Phenomena at Crystal Surfaces (2004) (2)
- Exciton Dynamics in Ultrathin InAs/GaAs Quantum-Wells (1995) (2)
- Decay dynamics of excitonic polarons in InAs/GaAs quantum dots (2011) (2)
- Growth and Characterization of Thick Si-Doped AlGaN Epilayers on Sapphire Substrates (1999) (2)
- Strictly Resonant Excitation of Carriers in Self-Assembled InAs/GaAs Quantum Dots (2000) (2)
- Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization (2004) (2)
- Room temperature yellow InGaAlP quantum dot laser (2019) (2)
- Energy characteristics of excitons in structures based on InGaN alloys (2008) (2)
- Optical studies of modulation doped InAs/GaAs quantum dots (1998) (2)
- Growth of GaAs-AlAs quantum clusters on non-(100)-oriented faceted GaAs surfaces by molecular beam epitaxy (1992) (2)
- Diode lasers based on quantum dots (1999) (2)
- Lasing in submonolayer InAs/AlGaAs structures without external optical confinement (1998) (2)
- Prospects for ultrafast optical switching based on quantum dot semiconductor optical amplifiers in nonlinear interferometers (2004) (2)
- InAs/GaAs quantum dots obtained by submonolayer migration-enhanced epitaxy (1995) (2)
- Entropy Effects in the Self-Organized Formation of Nanostructures (2002) (2)
- MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates (2002) (2)
- RESONANT EXCITON EFFECTS IN INAS MONOLAYER INSERTIONS IN A GAAS MATRIX (1996) (2)
- Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots (2000) (2)
- Kinetics and inhomogeneous carrier injection in InGaN nanolayers (2005) (2)
- Luminescence of localized electron-hole pairs in the fundamental absorption region of Zn(S,Se)-(Zn,Cd)Se quantum-well structures (1995) (2)
- Self-Ordering of Nanostructures on Semiconductor Surfaces (1997) (2)
- Optical properties of MBE-grown ultrathin GaAsN insertions in GaAs matrix (2003) (2)
- Dynamical properties of quantum dot semiconductor optical amplifiers at 1.3 μm fiber-coupled to quantum dot mode-locked lasers (2006) (2)
- Optical processes in quantum dots and wires (1994) (2)
- RT exciton waveguiding and lasing in submonolayer CdSe–(Zn, Mg)(S, Se) structures (1998) (2)
- Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface (1999) (2)
- High differential efficiency tilted wave laser (2014) (2)
- Possible impact of surface morphology on stimulated emission in GaN–AlGaN double heterostructures (1998) (2)
- Long-Wavelength InGaAs/GaAs Quantum Dot Lasers (2002) (2)
- Edge and surface emitting quantum dot lasers (1997) (2)
- Optical emission range of structures with strained InAs quantum dots in GaAs (1996) (2)
- Photoluminescence of localized excitons in InGan quantum dots (2008) (1)
- Self-Assembled Formation of Quantum Dots During InGaAlAs Quantum Well Growth (1998) (1)
- InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 µm (1999) (1)
- Gain to absorption conversion by increasing excitation density in excitonic waveguides (1998) (1)
- Emission of mid-infrared radiation and intersubband population inversion in near-infrared laser QW structures (2000) (1)
- MOLECULAR BEAM EPITAXY OF GASB/INAS/GASB HETEROSTRUCTURES WITH A HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRONS (1990) (1)
- 1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots (2001) (1)
- Yb-Ba-Cu-O growth using a BaO molecular beam (1991) (1)
- Progress in design and development of anti-guiding vertical cavity surface emitting laser at 850 nm: Above 50 Gb/s and single mode (2017) (1)
- High Speed Transmission Over 1km Wideband-MMF Using Single Mode VCSELs in the SWDM Range Operating at 85°C (2018) (1)
- VARIABLE-ANGLE OPTICAL REFLECTIVITY AND ANGLE-RESOLVED PHOTOLUMINESCENCE STUDIES OF 2D ACTIVE PHOTONIC CRYSTAL BASED ON QUANTUM DOTS (2007) (1)
- Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures (2001) (1)
- Engineering of Complex Nanostructures: Working Together with Nature (2004) (1)
- Matrices of 960-nm vertical-cavity surface-emitting lasers (2011) (1)
- Energy characteristics of excitons in InGaN/GaN heterostructures (2008) (1)
- 1.3-μm edge- and surface-emitting quantum dot lasers grown on GaAs substrates (2002) (1)
- High temperature laser diode based on a single sheet of quantum dots (2015) (1)
- 1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAsheterostructures. (2003) (1)
- 5 Gb/s elevated temperature data transmission using quantum dot lasers (2004) (1)
- Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams (1997) (1)
- Structural and Optical Properties of the Multilayer Structures Formed by Ge Sub-Critical Insertions in a Si Matrix (2002) (1)
- Light confinement in quantum dots (2001) (1)
- Comments on "Lasing at Three-Dimensionally Quantum-Confined Sublevel of Self-organized Ino,SGao.SAs Quantum Dots by Current Injection" (1996) (1)
- Nonequilibrium Spectroscopy of Inter- and Intraband Transitions in Quantum Dot Structures (2002) (1)
- Mid-infrared properties of quantum dot lasers (2001) (1)
- Spontaneous long-wavelength interlevel emission in quantum-dot laser structures (1998) (1)
- High Speed 1225 and 1250 nm VCSELs Based on Low-Temperature Grown Quantum Dots (2007) (1)
- Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells (2018) (1)
- Superlattice detector as a fast direct detector and autocorrelator for terahertz radiation (1999) (1)
- High performance long-wavelength QD diode lasers on GaAs substrates (2002) (1)
- The Influence of Cavity Design on the Linewidth of Near-IR Single-Mode Vertical-Cavity Surface-Emitting Lasers (2018) (1)
- Formation of arrays of facets on vicinal surfaces of GaAs (100) during molecular-beam epitaxy (1994) (1)
- Mechanism of germanium nanoinclusions formation in a silicon matrix during submonolayer MBE (2003) (1)
- High speed data transmission over multimode fiber based on single mode 850 nm leaky VCSELs (2017) (1)
- 1.3 Micron edge- and surface-emitting quantum dot lasers grown on GaAs substrates (2002) (1)
- Optical anisotropy of InGaAs quantum dots (2013) (1)
- Laser-Like Emission in the Blue-Green Spectral Range from InGaN/GaN/AlGaN Structures under Optical Pumping (2001) (1)
- Spontaneous Emission in the Anti-Waveguiding VCSEL (2019) (1)
- High Speed VCSEL: Technology and Applications (2021) (1)
- High-power, high repetition rate, short-pulse mode-locking using flared waveguide quantum-dot lasers at 1.3 /spl mu/m (2005) (1)
- High Frequency Signal Amplification using Quantum Dot Semiconductor Optical Amplifiers at 1.3 μ m (2006) (1)
- Nanostructures formed by sub- and close-to-critical Ge inclusions in a Si matrix (2003) (1)
- Characteristics of high-performance 1.0 /spl mu/m and 1.3 /spl mu/m quantum dot lasers: impact of p-doping and tunnel injection (2004) (1)
- Effect of AlGaAs-(AlGa)xOy pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots (2011) (1)
- Room temperature quantum dot lasers: From basic experiments to first device oriented structures (1996) (1)
- Process of fabricating semiconductor microcavities and photon crystals (2005) (1)
- Nitrogen-Activated Phase Separation in InGaAsN/GaAs Heterostructures Grown by MBE (2001) (1)
- Exciton resonance reflectivity study of quantum well wires (1993) (1)
- Green, yellow and bright red (In,Ga,Al)P–GaP diode lasers grown on high-index GaAs substrates (2017) (1)
- Novel concepts for designing semiconductor lasers (2015) (1)
- Tilted waveguide and PBC lasers: Novel cavity designs for narrow far-fields and high brightness (2010) (1)
- Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix (1999) (1)
- Quantum dots heterostructure lasers: state of the art and future prospects (1999) (1)
- Structure of InAs Quantum Dots in Si Matrix Investigated by High Resolution Electron Microscopy (1999) (1)
- RT lasing via nanoscale CdSe islands in a (Zn,Mg)(S,Se) matrix (1998) (1)
- Static and dynamic properties of (InGa)As/GaAs quantum dot lasers (1995) (1)
- Quantum dots for optoelectronics (1994) (1)
- Optical and structural properties of Ge submonolayer nano-inclusions in a Si matrix grown by molecular beam epitaxy (2001) (1)
- Raman scattering by LA and TA phonons in GaAs/AlAs superlattices grown along the [111], [112], and [113] directions (1993) (1)
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- Defense Technical Information Center Compilation Part Notice ADP 013169 TITLE : Nitrogen-Activated Phase Separation in InGaAsN / GaAs Heterostructures Grown by MBE DISTRIBUTION : Approved for public release , distribution unlimited (0)
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- Influence of carrier statistics on InGaN quantum dot device performance (2004) (0)
- Second harmonic spectroscopy of semiconductor nanostructures (1999) (0)
- High-power ultra-fast single- and multi-mode quantum dot lasers with superior beam profile (2004) (0)
- Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties (1997) (0)
- Large Spectral Splitting of TE and TM Components of QDs in a Microcavity (2001) (0)
- Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host (1999) (0)
- An analog of free carrier plasma component of carrier induced refractive index in quantum dot lasers (2004) (0)
- Defense Technical Information Center Compilation Part Notice ADP 013287 TITLE : A Comparative Study of QD and Nitrogen-Based 1 (0)
- Optical Properties and Lasing in CdSe-Submonolayers in a (Zn,Mg)(S,Se) Matrix (1998) (0)
- The impact of thermal effects on emission characteristics of asymmetrical AlGAO-waveguide microdisks based on quantum dots (2007) (0)
- Structure and Optical Properties of Si/InAs/Si Layers Grown by MBE on Si Substrate at Different Temperatures (2000) (0)
- Defense Technical Information Center Compilation Part Notice ADP 012886 (0)
- OF THE CONFERENCE DEDICATED TO O . V . LOSEV ( 1903 – 1942 ) ( Nizhni Novgorod , Russia , March 17 – 20 , 2003 ) Si / Ge Nanostructures for Optoelectronics Applications (2003) (0)
- Si-Ge Quantum Dot Laser: What Can We Learn From III-V Experience? (2003) (0)
- Matrices of 960nm VerticalCavity SurfaceEmitting Lasers (2011) (0)
- Formation specifity of InAs/GaAs submonolayer superlattice (2002) (0)
- Nano-optoelectronics : From promise to realization (2000) (0)
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What Schools Are Affiliated With Nikolai N. Ledentsov?
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