Nikolai N. Ledentsov

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Nikolai N. Ledentsov's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Quantum dot heterostructures (1999) (2078)
Low threshold, large To injection laser emission from (InGa)As quantum dots (1994) (716)
Energy relaxation by multiphonon processes in InAs/GaAs quantum dots (1997) (396)
InGaAs-GaAs quantum-dot lasers (1997) (381)
InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm (1999) (341)
Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers (1996) (300)
RADIATIVE RECOMBINATION IN TYPE-II GASB/GAAS QUANTUM DOTS (1995) (288)
The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers (2004) (238)
Epitaxy of Nanostructures (2003) (218)
Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers (2001) (205)
Quantum dot lasers: breakthrough in optoelectronics (2000) (204)
CARRIER DYNAMICS IN TYPE-II GASB/GAAS QUANTUM DOTS (1998) (202)
Multiphonon‐relaxation processes in self‐organized InAs/GaAs quantum dots (1996) (193)
Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors (2000) (191)
InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm (2000) (184)
Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing (1996) (182)
Excited states in self‐organized InAs/GaAs quantum dots: Theory and experiment (1996) (180)
High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser (2005) (154)
High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers (2005) (150)
High performance quantum dot lasers on GaAs substrates operating in 1.5 /spl mu/m range (2003) (149)
Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s (2009) (138)
Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing (1996) (137)
InAs/InGaAs/GaAs quantum dot lasers of 1.3 /spl mu/m range with high (88%) differential efficiency (2002) (137)
Strain engineering of self-organized InAs quantum dots (2001) (128)
Vertical correlations and anticorrelations in multisheet arrays of two-dimensional islands (1998) (123)
81 fJ/bit energy-to-data ratio of 850 nm vertical-cavity surface-emitting lasers for optical interconnects (2011) (122)
1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition (1999) (121)
InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain (2003) (119)
Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix (1998) (114)
Vertical cavity lasers based on vertically coupled quantum dots (1997) (114)
Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate (1999) (114)
Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates (1999) (114)
Prevention of gain saturation by multi-layer quantum dot lasers (1996) (109)
Complete suppression of filamentation and superior beam quality in quantum-dot lasers (2003) (106)
Single-mode submonolayer quantum-dot vertical-cavity surface-emitting lasers with high modulation bandwidth (2006) (103)
Long-wavelength quantum-dot lasers on GaAs substrates: from media to device concepts (2002) (102)
Quantum dot origin of luminescence in InGaN-GaN structures (2002) (100)
InAs/GaAs quantum dots radiative recombination from zero‐dimensional states (1995) (97)
Growth, Spectroscopy, and Laser Application of Self-Ordered III-V Quantum Dots (1998) (96)
Self-organization processes in MBE-grown quantum dot structures (1995) (95)
Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices (2001) (90)
Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high‐index surfaces (1994) (88)
3.9 W CW power from sub-monolayer quantum dot diode laser (1999) (87)
56 fJ dissipated energy per bit of oxide-confined 850 nm VCSELs operating at 25 Gbit/s (2012) (85)
Gain characteristics of quantum dot injection lasers (1999) (79)
Optical anisotropy in vertically coupled quantum dots (1999) (78)
Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix (1996) (75)
High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser (1998) (75)
Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states (2004) (74)
0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots (2000) (73)
Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-μm-wavelength at room temperature (2001) (72)
Optical properties of InAs quantum dots in a Si matrix (1999) (72)
Novel concepts for injection lasers (2002) (72)
InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T 0= 385 K) Grown by Metal Organic Chemical Vapour Deposition (1997) (71)
Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots (1999) (68)
Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser (2001) (68)
Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser (1999) (67)
Character of the Cd distribution in ultrathin CdSe layers in a ZnSe matrix (2000) (65)
Low-threshold injection lasers based on vertically coupled quantum dots (1997) (64)
Ordering phenomena in InAs strained layer morphological transformation on GaAs (100) surface (1995) (63)
1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy (2001) (60)
120°C 20 Gbit/s operation of 980 nm VCSEL (2008) (60)
Distortion-free optical amplification of 20-80 GHz modelocked laser pulses at 1.3 [micro sign]m using quantum dots (2006) (60)
On ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers (2004) (59)
InAs‐GaAs quantum dots: From growth to lasers (1996) (58)
On gain saturation in quantum dot semiconductor optical amplifiers (2005) (57)
Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm (1999) (57)
107.5 Gb/s 850 nm multi- and single-mode VCSEL transmission over 10 and 100 m of multi-mode fiber (2016) (56)
Volmer–Weber and Stranski–Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm (2000) (56)
LETTER TO THE EDITOR: High performance narrow stripe quantum-dot lasers with etched waveguide (2003) (54)
1.3 µm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition (2000) (53)
3.5 W CW operation of quantum dot laser (1999) (52)
Formation of InAs quantum dots on a silicon (100) surface (1998) (49)
Effect of excited-state transitions on the threshold characteristics of a quantum dot laser (2000) (49)
Frequency response of large aperture oxide-confined 850 nm vertical cavity surface emitting lasers (2009) (48)
Formation of coherent superdots using metal‐organic chemical vapor deposition (1996) (47)
MBE-grown metamorphic lasers for applications at telecom wavelengths (2007) (46)
Midinfrared emission from near-infrared quantum-dot lasers (2000) (46)
High-power monolithic passively modelocked quantum-dot laser (2005) (45)
Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands (1999) (44)
High-power single mode (>1W) continuous wave operation of longitudinal photonic band crystal lasers with a narrow vertical beam divergence (2008) (43)
Transform-limited optical pulses from 18 GHz monolithic modelocked quantum dot lasers operating at ∼1.3 µm (2004) (43)
Control of the emission wavelength of self-organized InGaAs quantum dots: main achievements and present status (1999) (42)
Progress in Epitaxial Growth and Performance of Quantum Dot and Quantum Wire Lasers (2008) (42)
Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET-type structures on GaAs substrates (2004) (41)
Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots (2006) (40)
20 Gb/s 85$^{\circ}$C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots (2006) (40)
Spectral and dynamic properties of InAs-GaAs self-organized quantum-dot lasers (1999) (40)
Progress in Quantum Dot Lasers: 1100 nm, 1300 nm, and High Power Applications (2000) (39)
Optical orientation and alignment of excitons in quantum dots (1998) (39)
Arrays of 850 nm photodiodes and vertical cavity surface emitting lasers for 25 to 40 Gbit/s optical interconnects (2012) (39)
Reversibility of the island shape, volume and density in Stranski-Krastanow growth (2001) (37)
Optical and structural properties of self-organized InGaAsN/GaAs nanostructures (2001) (37)
Temperature-Dependent Small-Signal Analysis of High-Speed High-Temperature Stable 980-nm VCSELs (2009) (36)
Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate (2000) (36)
Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures (1999) (34)
Improved catastrophic optical mirror damage level in InGaAs/AlGaAs laser diodes (2000) (34)
Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy (1999) (34)
Growth of self-organized quantum dots for optoelectronics applications: nanostructures, nanoepitaxy, defect engineering (2003) (34)
High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence (2005) (33)
Novel infrared quantum dot lasers : Theory and reality (2001) (33)
Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE (2003) (32)
LOW THRESHOLD QUANTUM DOT INJECTION LASER EMITTING AT 1.9MU M (1998) (32)
High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system (2005) (32)
Ultra-High-Bandwidth (>35 GHz) Electrooptically-Modulated VCSEL (2006) (32)
High-Power Low-Beam Divergence Edge-Emitting Semiconductor Lasers with 1- and 2-D Photonic Bandgap Crystal Waveguide (2008) (31)
Hot carrier relaxation in InAs/GaAs quantum dots (1998) (31)
High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates (2004) (30)
POLARIZATION SPLITTING OF THE GAIN BAND IN QUANTUM WIRE AND QUANTUM DOT ARRAYS (1999) (30)
High-Speed Quantum-Dot Vertical-Cavity Surface-Emitting Lasers (2007) (30)
Reliability performance of 25 Gbit s−1 850 nm vertical-cavity surface-emitting lasers (2013) (29)
Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures (2002) (29)
Fine structure of excitonic levels in quantum dots (1997) (29)
Electronic structure and energy relaxation in strained InAs/GaAs quantum pyramids (1996) (28)
Spontaneous far-IR emission accompanying transitions of charge carriers between levels of quantum dots (1998) (28)
Response to “Comment on ‘Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix’ ” [Appl. Phys. Lett. 70, 2765 (1997)] (1997) (28)
Wavelength-stabilized tilted cavity quantum dot laser (2004) (28)
Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes (2008) (28)
Thermodynamic analysis of segregation effects in molecular beam epitaxy (1990) (27)
Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C (1997) (27)
Molecular beam epitaxial growth of {InSb}/{GaAs(100) } and {InSb}/{Si(100) } heteroepitaxial layers (thermodynamic analysis and characterization) (1995) (26)
Quantum dots for VCSEL applications at (2002) (26)
Accelerated aging of 28 Gb s−1 850 nm vertical-cavity surface-emitting laser with multiple thick oxide apertures (2015) (26)
Injection lasers based on InGaAs quantum dots in an AlGaAs matrix (1998) (26)
An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix (1996) (26)
The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix (2002) (25)
High bit rate and elevated temperature data transmission using InGaAs quantum-dot lasers (2004) (25)
Thermodynamic analysis of segregation effects in MBE of AIII−BV compounds (1991) (25)
Interplay of beryllium segregation and diffusion in heavily doped GaAs and AlGaAs grown by molecular beam epitaxy (thermodynamic analysis) (1991) (25)
Tilted Wave Lasers: A Way to High Brightness Sources of Light (2011) (25)
High-Speed DMT and VCSEL-Based MMF Transmission Using Pre-Distortion (2018) (24)
Strain-induced formation and tuning of ordered nanostructures on crystal surfaces (1996) (24)
High external differential efficiency and high optical gain of long-wavelength quantum dot diode laser (2003) (24)
Lateral-cavity spectral hole burning in quantum-dot lasers (2002) (24)
Interconnection between gain spectrum and cavity mode in a quantum-dot vertical-cavity laser (1999) (23)
Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix (1997) (23)
GaAs-based 1.3 µm InGaAs quantum dot lasers: A status report (2000) (23)
Single mode cw operation of 658nm AlGaInP lasers based on longitudinal photonic band gap crystal (2006) (22)
Quantum dot lasers: The birth and future trends (1999) (22)
Exciton-induced enhancement of optical waveguide confinement in (Zn,Cd)(Se,S) quantum well laser heterostructures (1994) (21)
Properties of strained (In, Ga, Al)As lasers with laterally modulated active region (1997) (21)
Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics (2001) (21)
Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode (2003) (20)
Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots (1998) (20)
Long-wavelength quantum dot lasers on GaAs substrates (2000) (20)
Optical spectroscopy of self-organized nanoscale hetero-structures involving high-index surfaces (1995) (20)
Single transverse mode operation of long wavelength (/spl sim/1.3 /spl mu/m) InAsGaAs quantum dot laser (1999) (19)
QD lasers: physics and applications (2005) (19)
Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates (1999) (19)
High-Brightness and Ultranarrow-Beam 850-nm GaAs/AlGaAs Photonic Band Crystal Lasers and Single-Mode Arrays (2009) (19)
Quantum dot based photonic devices at 1.3 µm: Direct modulation, mode-locking, SOAs and VCSELs (2006) (19)
STM and RHEED study of InAsGaAs quantum dots obtained by submonolayer epitaxial techniques (1996) (18)
Size quantization by faceting in (110)‐oriented GaAs/AlAs heterostructures (1992) (18)
Light confinement in a quantum dot (2000) (18)
Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates (2000) (18)
Effect of growth kinetics on the InAs/GaAs quantum dot arrays formation on vicinal surfaces (1997) (18)
Radiation characteristics of injection lasers based on vertically coupled quantum dots (1997) (17)
Photoluminescence of InSb quantum dots in GaAs and GaSb matrices (1997) (17)
Self-organized InAs quantum dots in a silicon matrix (1999) (17)
Surface-mode lasing from stacked InGaN insertions in a GaN matrix (1999) (17)
Entropy‐Driven Effects in Self‐Organized Formation of Quantum Dots (2001) (17)
Gain characteristics of quantum-dot injection lasers (1999) (16)
Quantum dots formed by activated spinodal decomposition of InGa(Al)As alloy on InAs stressors (2000) (16)
Reliability study of InAs/InGaAs quantum dot diode lasers (2005) (16)
Electronic Properties of InAs/GaAs Quantum Dots Covered by an InxGa1–xAs Quantum Well (2001) (16)
Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W (1997) (16)
Design considerations for large-aperture single-mode oxide-confined vertical-cavity surface-emitting lasers (2012) (16)
Mode-locked quantum dot lasers for picosecond pulse generation (2004) (16)
Effect of the quantum-dot surface density in the active region on injection-laser characteristics (1998) (16)
High-power one-, two-, and three-dimensional photonic crystal edge-emitting laser diodes for ultra-high brightness applications (2008) (16)
Narrow vertical beam divergence laser diode based on longitudinal photonic band crystal waveguide (2003) (16)
Edge and vertical cavity surface emitting InAs quantum dot lasers (1998) (16)
Exciton resonance reflection from quantum well, quantum wire and quantum dot structures (1992) (15)
Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures (1999) (15)
20 Gb/s 85 °C Error Free Operation of VCSEL based on Submonolayer Deposition of Quantum Dots (2006) (15)
Long-wavelength (1.3-1.5 micron) quantum dot lasers based on GaAs (2004) (15)
Formation of GaAsN nanoinsertions in a GaN matrix by metal-organic chemical vapour deposition (2000) (15)
Lasing at 1.5 µm in quantum dot structures on GaAs substrates (2003) (15)
1.3 µm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices (2001) (15)
An intermediate (1.0 1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy (1996) (14)
CONFERENCES AND SYMPOSIA: Scientific session of the Division of General Physics and Astronomy of the Russian Academy of Sciences (January 29, 1997) (1997) (14)
Exciton polaritons in a cylindrical microcavity with an embedded quantum wire. (2000) (14)
Ordered quantum-dot arrays in semiconducting matrices (1996) (14)
High power GaInP/AlGaInP visible lasers (λ = 646 nm) with narrow circular shaped far-field pattern (2005) (14)
10.7w peak power picosecond pulses from high-brightness photonic band crystal laser diode (2010) (14)
Self-organized quantum wires and dots: New opportunities for device applications (1997) (14)
Effect of nonradiative recombination centers on photoluminescence efficiency in quantum dot structures (2004) (14)
Electromagnetic response of 3D arrays of quantum dots (2000) (14)
Semiconductor quantum dots for application in diode lasers (1998) (13)
High-Speed Quantum Dot Lasers and Amplifiers for Optical Data Communication (2006) (13)
Impact of the mesa etching profiles on the spectral hole burning effects in quantum dot lasers (2004) (13)
Size and shape effects in electromagnetic response of quantum dots and quantum dot arrays (2001) (13)
Electronic properties of semiconductor quantum-wire structures directly grown on (311) surfaces (1992) (13)
Low divergence edge‐emitting laser with asymmetric waveguide based on one‐dimensional photonic crystal (2005) (13)
Optical Properties of Structures with Single and Multiple InGaN Insertions in a GaN Matrix (1999) (13)
Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at ∼ 1.3 mm (2000) (12)
Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces (2014) (12)
Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence (2006) (12)
Molecular beam epitaxy (MBE) growth of composite (In,Al)As/(In,Ga)As vertically coupled quantum dots and their application in injection lasers (1999) (12)
Room-temperature yellow-orange (In,Ga,Al)P-GaP laser diodes grown on (n11) GaAs substrates. (2018) (12)
Fabrication of InAs quantum dots on silicon (1998) (12)
Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy (1998) (12)
Digital data transmission using electro-optically modulated vertical-cavity surface-emitting laser with saturable absorber (2014) (11)
Nanofaceting and alloy decomposition: From basic studies to advanced photonic devices (2006) (11)
Formation of Stacked Self-Assembled InAs Quantum Dots in GaAs Matrix for Laser Applications (1995) (11)
Resonant spin-flip Raman scattering and localized exciton luminescence in submonolayer InAs-GaAs structures (1996) (11)
Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm (1998) (11)
RT lasing and efficient optical confinement in CdSe/ZnMgSSe submonolayer superlattices (1998) (11)
Luminescence properties of semiconductor quantum dots (1997) (11)
A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate (2000) (11)
Formation of InGaAs/GaAs quantum dots by submonolayer molecular beam epitaxy (1995) (11)
Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region (2005) (11)
Long-wavelength lasers based on metamorphic quantum dots (2005) (11)
The emission from the structures with arrays of coupled quantum dots grown by the submonolayer epitaxy in the spectral range of 1.3–1.4 µm (2000) (11)
Optical mode engineering and high power density per facet length (>8.4 kW/cm) in tilted wave laser diodes (2016) (11)
Formation of self-organized quantum dots at semiconductor surfaces (1998) (11)
Single transverse mode 850 nm GaAs/AlGaAs lasers with narrow beam divergence (2006) (10)
GaAs-Based InAs/InGaAs Quantum Dot Vertical Cavity and Vertical External Cavity Surface Emitting Lasers Emitting Near 1300 nm (2005) (10)
Nonequilibrium room-temperature carrier distribution in InAs quantum dots overgrown with thin AlAs/InAlAs layers (2005) (10)
Structural and optical properties of InAs quantum dots in AlGaAs matrix (2003) (10)
Application of self-organized quantum dots to edge emitting and vertical cavity lasers (1998) (10)
Properties of InGaAsN heterostructures emitting at 1.3–1.55 µm (2005) (10)
Intrinsic optical confinement and lasing in InAs–AlGaAs submonolayer superlattices (1999) (10)
CONFERENCES AND SYMPOSIA: The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells (1999) (10)
High-power single-mode 1.3-μm lasers based on InAs/AlGaAs/GaAs quantum dot heterostructures (2004) (10)
Miniband transport in a GaAs/AlAs superlattice with submonolayer barriers in a static and THz electric field (2000) (10)
Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates (2003) (9)
Calculation of the size-quantization levels in strained ZnCdSe/ZnSe quantum wells (1997) (9)
Quantum dots formed by ultrathin insertions in wide-gap matrices (2000) (9)
New-generation vertically emitting lasers as a key factor in the computer communication era (2011) (9)
Novel approaches to semiconductor lasers (2002) (9)
Optical properties of InAlAs quantum dots in an AlGaAs matrix (1998) (9)
850 nm VCSELs for up to 40 Gbit/s short reach data links (2010) (9)
Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture (2012) (9)
Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix (1999) (9)
Investigation of MOVPE-grown GaN layers doped with As atoms (1999) (9)
High--power ultrashort pulses output from a modelocked two-section quantum-dot laser (2004) (9)
Lateral association of vertically coupled quantum dots (1997) (9)
Analysis of the local indium composition in ultrathin InGaN layers (2007) (9)
Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition (1999) (9)
v Accelerated Online Publication LASERS, OPTICS, AND OPTOELECTRONICS 2971 Microscopic quantum theory of spatially resolved photoluminescence in semiconductor quantum structures (2004) (8)
Modeling of photonic-crystal-based high-power high-brightness semiconductor lasers (2010) (8)
Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 µm (1998) (8)
High-power wavelength stabilized 970nm tilted cavity laser with a 41.3dB side mode suppression ratio (2007) (8)
Formation of three-dimensional islands in subcritical layer deposition in Stranski-Krastanow growth. (2013) (8)
Heteroepitaxial growth of InAs on Si: A new type of quantum dot (1999) (8)
Gain in injection lasers based on self-organized quantum dots (1999) (8)
Energy efficient 850 nm VCSELs operating error-free at 25 Gb/s over multimode optical fiber up to 600 m (2012) (8)
Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C (2019) (8)
Comparative analysis of long-wavelength (1.3 µm) VCSELs on GaAs substrates (2001) (8)
1.75 μm emission from self-organized InAs quantum dots on GaAs (1999) (8)
Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm (2003) (8)
PHOTOPUMPED INGAN/GAN/ALGAN VERTICAL CAVITY SURFACE EMITTING LASER OPERATING AT ROOM TEMPERATURE (1999) (8)
Tilted cavity laser (Critical Review Lecture) (2004) (8)
3D Arrays of Quantum Dots for Laser Applications (1996) (7)
Passive cavity laser and tilted wave laser for Bessel-like beam coherently coupled bars and stacks (2015) (7)
Long-term stability of long-wavelength (>1.25 µm) quantum-dot lasers fabricated on GaAs substrates (2003) (7)
Spontaneous formation of nanostructures on crystal surfaces (2001) (7)
Modulation of a quantum well potential by a quantum-dot array (1997) (7)
Effect of deposition conditions on the formation of (In,Ga)As quantum clusters in a GaAs matrix (1994) (7)
InAs/GaAs quantum dot lasers (1996) (7)
Strained-submonolayer and quantum-dot superstructures (1995) (7)
Spontaneous Formation of Arrays of Strained Islands: Thermodynamics Versus Kinetics (1999) (7)
Resonant photoluminescence from modulation-doped InAs-GaAs quantum dots (1997) (7)
Heterostructure for UV LEDs Based on Thick AlGaN Layers (1998) (7)
Self-organized growth of semiconductor nanostructures for novel light emitters (2000) (7)
Edge-emitting InGaAs/GaAs lasers with deeply etched semiconductor/air distributed Bragg reflector mirrors (2002) (7)
(In,Ga,Al)P–GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range (2017) (7)
Coulomb Interaction between Carriers Localized in InAs/GaAs Quantum Dots and on Point Defects (1997) (6)
Magneto-optical properties of InAs monolayers and InyAl1−yAs self-assembled quantum dots in Ga(Al)As matrices (1996) (6)
Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement (1997) (6)
54 Gbps OOK transmission using single mode VCSEL up to 1 km OM4 MMF (2016) (6)
1.55–1.6 μm electroluminescence of GaAs based diode structures with quantum dots (2001) (6)
GaSb quantum dot growth using InAs quantum dot stressors (2003) (6)
Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range (2000) (6)
Optical anisotropy of GaAs/AlAs superlattices grown in the [113] direction (1994) (6)
850 nm single mode VCSEL-based 25Gx16 transmitter/receiver boards for parallel signal transmission over 1 km of multimode fiber (2015) (6)
Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation (2006) (6)
Optical properties of submonolayer germanium clusters formed by molecular-beam epitaxy in a silicon matrix (2001) (6)
Miniband transport in a semiconductor superlattice with submonolayer barriers (1999) (6)
Excition relaxation in self-organized InAs/GaAs quantum dots (1996) (6)
Impact of Carrier Lateral Transport and Surface Recombination on the PL Efficiency of Mesas with Self‐Organized Quantum Dots (2001) (6)
3.5 W continuous wave operation from quantum dot laser (2000) (6)
Thermal stability of vertically coupled InAs-GaAs quantum dot arrays (1997) (6)
Optical properties of structures with ultradense arrays of Ge QDs in an Si matrix (2003) (6)
Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys (2003) (6)
Spontaneous ordering of semiconductor nanostructures (1997) (6)
Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs (2006) (6)
Scientific session of the Division of General Physics and Astronomy of the Russian Academy of Sciences (31 January, 2001) (2001) (5)
Barrier-disorder induced exciton relaxation via LO-phonons in GaAs/AlxGa1−xAs multiple quantum wells (1992) (5)
Design optimization for bright electrically-driven quantum dot single-photon sources emitting in telecom O-band. (2021) (5)
Growth, characterizations, theory and lasing of vertically stacked quantum dots (1996) (5)
120 °C 20 Gbit/s operation of 980 nm single mode VCSEL (2008) (5)
Ultrathin layers and short-period superlattices in semiconductor structures (1990) (5)
High-performance of single mode InAs/InGaAs/GaAs quantum dot lasers of 1.3-micron range (2003) (5)
Lateral association of vertically-coupled quantum dots (1998) (5)
Radiative Inter‐Sublevel Transitions in InGaAs/AlGaAs Quantum Dots (2001) (5)
Quantum dot photonics: edge emitter, amplifier and VCSEL (2005) (5)
Leakage-Assisted Transverse Mode Selection in Vertical-Cavity Surface-Emitting Lasers With Thick Large-Diameter Oxide Apertures (2013) (5)
Transform-limited optical pulses from 18GHz monolithic modelocked quantum dot lasers operating at similar to 1.3 mu m (2004) (5)
Quantum Dot Amplifiers for 100 Gbit Ethernet (2006) (5)
Quantum wires and quantum dots on corrugated (311) surfaces: potential applications in optoelectronics (2002) (5)
Quantum Dot Devices and Computing (2002) (5)
Identification of radiative recombination channels in quantum dot structures (1996) (5)
Size-selective optically excited capacitance transient spectroscopy of InAs=GaAs quantum dots (2002) (5)
Devices Based on Epitaxial Nanostructures (2004) (5)
Metamorphic modulation-doped InAlAs/InGaAs/InAlAs heterostructures with high electron mobility grown on gaas substrates (2003) (5)
Effect of growth conditions on InAs nanoislands formation on Si(100) surface (1999) (5)
Mode-locking at 9.7 GHz repetition rate with 1.7 ps pulse duration in two-section QD lasers (2004) (5)
Lasing wavelength of quantum dot heterostructures controlled within the 1.3–0.85 μm range by means of high-temperature annealing (2004) (5)
Response to Comment: ‘‘Comment on ‘Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high‐index surfaces’ ’’ [Appl. Phys. Lett. 66, 111 (1995)] (1995) (5)
Quantum dot lasers: Theory and experiment (2001) (5)
Quantum-dot injection heterolaser with 3.3 W output power (1999) (5)
Design and technology of vertical-cavity surface-emitting lasers with nonconducting epitaxial mirrors (2003) (5)
Erratum: Carrier dynamics in type-II GaSb/GaAs quantum dots [Phys. Rev. B 57 , 4635 (1998)] (1998) (4)
Carrier relaxation mechanisms and Fermi versus non-Fermi carrier distribution in quantum dot arrays formed by activated alloy phase separation (2000) (4)
Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots (2000) (4)
Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure (1997) (4)
Edge and surface-emitting tilted cavity lasers (Invited Paper) (2005) (4)
InAs-GaAs Quantum Dot Lasers: in Situ Growth, Radiative Lifetimes and Polarization Properties (1995) (4)
Passive cavity surface-emitting lasers: option of temperature-insensitive lasing wavelength for uncooled dense wavelength division multiplexing systems (2016) (4)
Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates (1998) (4)
20-Gb/s direct modulation of 980 nm VCSELs based on submonolayer deposition of quantum dots (2006) (4)
Transient-four-wave-mixing studies of GaAs micro-crystallites (1994) (4)
Quantum-dot lasers: Principal components of the threshold current density (1997) (4)
Multi-mode to single-mode switching caused by self-heating in bottom-emitting intra-cavity contacted 960 nm VCSELs (2012) (4)
Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots (2007) (4)
Morphology evolution in strain-compensated multiple quantum well structures (2014) (4)
APPLICATIONS OF QUANTUM DOTS IN SEMICONDUCTOR LASERS (2002) (4)
Structural characterization of self-organized nanostructures (1998) (4)
Robustness versus thermal effects of single-mode operation of vertical-cavity surface-emitting lasers with engineered leakage of high-order transverse optical modes (2017) (4)
MOCVD-grown AlGaN/GaN heterostructures with high electron mobility (2004) (4)
Long-wavelength lasers using GaAs-based quantum dots (2002) (4)
Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices (2001) (4)
Photoluminescence of localized excitons in InGan quantum dots (2008) (4)
Temperature dependent output characteristics of p-doped 1.1 and 1.3 μm quantum dot lasers (2005) (4)
Raman study of GaAs quantum wires grown with partial filling of corrugated (311)A AlAs surfaces (2002) (4)
Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties (2001) (4)
Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells (2002) (3)
Ultimate modulation bandwidth of 850 nm oxide-confined vertical-cavity surface-emitting lasers (2015) (3)
Vertical Cavity Surface — Emitting Lasers using InGaN Quantum Dots (1999) (3)
Lasing in Vertical Direction in Structures with InGaN Quantum Dots (2000) (3)
Optical and Structural Properties of Quantum Dots in Wide‐Bandgap Semiconductors (2001) (3)
HETEROEPITAXIAL GROWTH OF InAs ON Si : THE NEW TYPE OF QUANTUM DOTS (3)
Epitaxial growth of quantum-dot heterostructures on metamorphic buffers (2005) (3)
1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them (2001) (3)
Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement (1997) (3)
MBE-grown ultra-large aperture single-mode vertical-cavity surface-emitting laser with all-epitaxial filter section (2007) (3)
Mode locking of InGaAs quantum dot lasers (2004) (3)
Room-temperature 1.3-μm lasing in a microdisk with quantum dots (2006) (3)
Resonant Raman scattering studies of multilayer (In, Ga, Al) (As, Sb) heterostructures with InAs quantum wells (1994) (3)
Structural and optical properties of InAlN/GaN distributed Bragg reflectors (2010) (3)
Influence of carrier statistics on InGaN/GaN device performance (2004) (3)
Optical anisotropy of InAs quantum dots (2010) (3)
Reduction of Defect Density in Structures With InAs-GaAs Quantum Dots Grown at Low Temperature for 1.55 [.proportional]m Range. (2001) (3)
The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3–1.55 μm (2005) (3)
Optical properties of submonolayer CdSe-(Zn,Mg)(S,Se) structures (1997) (3)
Stable modelocked operation from a quantum-dot laser in a broad temperature range (2005) (3)
Continuous wave 1.3 /spl mu/m InAs-InGaAs quantum dot VCSELs on GaAs substrates (2001) (3)
Growth and Characterization of Coherent Quantum Dots Grown by Single- and Multi-Cycle Metal-Organic Chemical Vapour Deposition (1997) (3)
Tem Structural Characterization of Nm-Scale Islands in Highly Mismatched Systems (1996) (3)
Time‐Resolved Studies of InGaN/GaN Quantum Dots (2002) (3)
Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region (1998) (3)
Design considerations for large-aperture single-mode oxide-confined VCSELs (2013) (3)
1.3-1.5 μm quantum dot lasers on foreign substrates: growth using defect reduction technique, high-power CW operation, and degradation resistance (2006) (3)
Comments on "Lasing at three-dimensionally quantum-confined sublevel of self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots by current injection" [and reply] (1996) (3)
MBE Growth and Characterization of Composite InAlAs/In(Ga)As Vertically Aligned Quantum Dots (1999) (3)
Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells (2001) (3)
Gain studies and lasing in excitonic waveguides of II–VI submonolayer structures (1998) (3)
Enhanced exciton binding energy in InAs monolayers grown on (311)A GaAs substrates (1996) (3)
Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures (1999) (3)
Surface-phase equilibria in MBE of strained In1-xGaxAs heteroepitaxcial layers (2006) (2)
OPTOELECTRONIC DEVICES BASED ON QUANTUM DOTS (2007) (2)
Quantum dots for GaAs-based surface emitting lasers at 1300 nm (2000) (2)
Vertical-cavity emitting devices with quantum-dot structures (2001) (2)
Ultimate Control of the Thermal Shift of a Tilted Cavity Laser Wavelength (2007) (2)
Semiconductor quantum-dot lasers and amplifiers (2002) (2)
Ultralow threshold long wavelength single-mode quantum dot VCSELs on GaAs substrates (2005) (2)
Power conversion efficiency of quantum dot laser diodes (2000) (2)
Effect of heat-treatment conditions on the surface morphology of gallium arsenide grown on vicinal GaAs (100) substrates by molecular-beam epitaxy (1994) (2)
Self-Organization Phenomena at Crystal Surfaces (2004) (2)
Exciton Dynamics in Ultrathin InAs/GaAs Quantum-Wells (1995) (2)
Decay dynamics of excitonic polarons in InAs/GaAs quantum dots (2011) (2)
Growth and Characterization of Thick Si-Doped AlGaN Epilayers on Sapphire Substrates (1999) (2)
Strictly Resonant Excitation of Carriers in Self-Assembled InAs/GaAs Quantum Dots (2000) (2)
Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization (2004) (2)
Room temperature yellow InGaAlP quantum dot laser (2019) (2)
Energy characteristics of excitons in structures based on InGaN alloys (2008) (2)
Optical studies of modulation doped InAs/GaAs quantum dots (1998) (2)
Growth of GaAs-AlAs quantum clusters on non-(100)-oriented faceted GaAs surfaces by molecular beam epitaxy (1992) (2)
Diode lasers based on quantum dots (1999) (2)
Lasing in submonolayer InAs/AlGaAs structures without external optical confinement (1998) (2)
Prospects for ultrafast optical switching based on quantum dot semiconductor optical amplifiers in nonlinear interferometers (2004) (2)
InAs/GaAs quantum dots obtained by submonolayer migration-enhanced epitaxy (1995) (2)
Entropy Effects in the Self-Organized Formation of Nanostructures (2002) (2)
MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates (2002) (2)
RESONANT EXCITON EFFECTS IN INAS MONOLAYER INSERTIONS IN A GAAS MATRIX (1996) (2)
Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots (2000) (2)
Kinetics and inhomogeneous carrier injection in InGaN nanolayers (2005) (2)
Luminescence of localized electron-hole pairs in the fundamental absorption region of Zn(S,Se)-(Zn,Cd)Se quantum-well structures (1995) (2)
Self-Ordering of Nanostructures on Semiconductor Surfaces (1997) (2)
Optical properties of MBE-grown ultrathin GaAsN insertions in GaAs matrix (2003) (2)
Dynamical properties of quantum dot semiconductor optical amplifiers at 1.3 μm fiber-coupled to quantum dot mode-locked lasers (2006) (2)
Optical processes in quantum dots and wires (1994) (2)
RT exciton waveguiding and lasing in submonolayer CdSe–(Zn, Mg)(S, Se) structures (1998) (2)
Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface (1999) (2)
High differential efficiency tilted wave laser (2014) (2)
Possible impact of surface morphology on stimulated emission in GaN–AlGaN double heterostructures (1998) (2)
Long-Wavelength InGaAs/GaAs Quantum Dot Lasers (2002) (2)
Edge and surface emitting quantum dot lasers (1997) (2)
Optical emission range of structures with strained InAs quantum dots in GaAs (1996) (2)
Photoluminescence of localized excitons in InGan quantum dots (2008) (1)
Self-Assembled Formation of Quantum Dots During InGaAlAs Quantum Well Growth (1998) (1)
InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 µm (1999) (1)
Gain to absorption conversion by increasing excitation density in excitonic waveguides (1998) (1)
Emission of mid-infrared radiation and intersubband population inversion in near-infrared laser QW structures (2000) (1)
MOLECULAR BEAM EPITAXY OF GASB/INAS/GASB HETEROSTRUCTURES WITH A HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRONS (1990) (1)
1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots (2001) (1)
Yb-Ba-Cu-O growth using a BaO molecular beam (1991) (1)
Progress in design and development of anti-guiding vertical cavity surface emitting laser at 850 nm: Above 50 Gb/s and single mode (2017) (1)
High Speed Transmission Over 1km Wideband-MMF Using Single Mode VCSELs in the SWDM Range Operating at 85°C (2018) (1)
VARIABLE-ANGLE OPTICAL REFLECTIVITY AND ANGLE-RESOLVED PHOTOLUMINESCENCE STUDIES OF 2D ACTIVE PHOTONIC CRYSTAL BASED ON QUANTUM DOTS (2007) (1)
Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures (2001) (1)
Engineering of Complex Nanostructures: Working Together with Nature (2004) (1)
Matrices of 960-nm vertical-cavity surface-emitting lasers (2011) (1)
Energy characteristics of excitons in InGaN/GaN heterostructures (2008) (1)
1.3-μm edge- and surface-emitting quantum dot lasers grown on GaAs substrates (2002) (1)
High temperature laser diode based on a single sheet of quantum dots (2015) (1)
1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAsheterostructures. (2003) (1)
5 Gb/s elevated temperature data transmission using quantum dot lasers (2004) (1)
Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams (1997) (1)
Structural and Optical Properties of the Multilayer Structures Formed by Ge Sub-Critical Insertions in a Si Matrix (2002) (1)
Light confinement in quantum dots (2001) (1)
Comments on "Lasing at Three-Dimensionally Quantum-Confined Sublevel of Self-organized Ino,SGao.SAs Quantum Dots by Current Injection" (1996) (1)
Nonequilibrium Spectroscopy of Inter- and Intraband Transitions in Quantum Dot Structures (2002) (1)
Mid-infrared properties of quantum dot lasers (2001) (1)
Spontaneous long-wavelength interlevel emission in quantum-dot laser structures (1998) (1)
High Speed 1225 and 1250 nm VCSELs Based on Low-Temperature Grown Quantum Dots (2007) (1)
Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells (2018) (1)
Superlattice detector as a fast direct detector and autocorrelator for terahertz radiation (1999) (1)
High performance long-wavelength QD diode lasers on GaAs substrates (2002) (1)
The Influence of Cavity Design on the Linewidth of Near-IR Single-Mode Vertical-Cavity Surface-Emitting Lasers (2018) (1)
Formation of arrays of facets on vicinal surfaces of GaAs (100) during molecular-beam epitaxy (1994) (1)
Mechanism of germanium nanoinclusions formation in a silicon matrix during submonolayer MBE (2003) (1)
High speed data transmission over multimode fiber based on single mode 850 nm leaky VCSELs (2017) (1)
1.3 Micron edge- and surface-emitting quantum dot lasers grown on GaAs substrates (2002) (1)
Optical anisotropy of InGaAs quantum dots (2013) (1)
Laser-Like Emission in the Blue-Green Spectral Range from InGaN/GaN/AlGaN Structures under Optical Pumping (2001) (1)
Spontaneous Emission in the Anti-Waveguiding VCSEL (2019) (1)
High Speed VCSEL: Technology and Applications (2021) (1)
High-power, high repetition rate, short-pulse mode-locking using flared waveguide quantum-dot lasers at 1.3 /spl mu/m (2005) (1)
High Frequency Signal Amplification using Quantum Dot Semiconductor Optical Amplifiers at 1.3 μ m (2006) (1)
Nanostructures formed by sub- and close-to-critical Ge inclusions in a Si matrix (2003) (1)
Characteristics of high-performance 1.0 /spl mu/m and 1.3 /spl mu/m quantum dot lasers: impact of p-doping and tunnel injection (2004) (1)
Effect of AlGaAs-(AlGa)xOy pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots (2011) (1)
Room temperature quantum dot lasers: From basic experiments to first device oriented structures (1996) (1)
Process of fabricating semiconductor microcavities and photon crystals (2005) (1)
Nitrogen-Activated Phase Separation in InGaAsN/GaAs Heterostructures Grown by MBE (2001) (1)
Exciton resonance reflectivity study of quantum well wires (1993) (1)
Green, yellow and bright red (In,Ga,Al)P–GaP diode lasers grown on high-index GaAs substrates (2017) (1)
Novel concepts for designing semiconductor lasers (2015) (1)
Tilted waveguide and PBC lasers: Novel cavity designs for narrow far-fields and high brightness (2010) (1)
Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix (1999) (1)
Quantum dots heterostructure lasers: state of the art and future prospects (1999) (1)
Structure of InAs Quantum Dots in Si Matrix Investigated by High Resolution Electron Microscopy (1999) (1)
RT lasing via nanoscale CdSe islands in a (Zn,Mg)(S,Se) matrix (1998) (1)
Static and dynamic properties of (InGa)As/GaAs quantum dot lasers (1995) (1)
Quantum dots for optoelectronics (1994) (1)
Optical and structural properties of Ge submonolayer nano-inclusions in a Si matrix grown by molecular beam epitaxy (2001) (1)
Raman scattering by LA and TA phonons in GaAs/AlAs superlattices grown along the [111], [112], and [113] directions (1993) (1)
HIGH TEMPERATURE STABILITY OF OPTICAL PROPERTIES OF InAs QUANTUM DOTS REALIZED BY CONTROLLING OF QUANTUM DOTS ELECTRONIC SPECTRUM (2007) (1)
Optical Switches and Modulators for Integrated Optoelectronic Systems (1998) (1)
Oxide confined 850-nm VCSELs for high-speed datacom applications (2010) (0)
The Advantages of Selectively Delta-Doped III-V Heterostructures for HEMT Applications (1991) (0)
Localization of non-equilibrium carriers in deep InGaN quantum dots and its impact on the device performance (2006) (0)
Semiconductor heterostructures for lasers and microwave FETs (2003) (0)
Quantum dot lasers: from promise to reality (2000) (0)
Dynamics of doubly resonant Raman scattering and resonant luminiscence in ultrathin InAs/GaAs quantum wells (1996) (0)
4 watt high power quantum dot lasers (1999) (0)
Whispering Gallery Modes and Spontaneous Emission in Compact VCSEL Structures (2019) (0)
Special features of structural interaction in (AlGaIn)N/GaN heterostructures used as dislocation filters (2005) (0)
Quantum dot vertical cavity lasers (2001) (0)
Growth and Characterization Techniques (2004) (0)
Semiconductor quantum dot lasers (2005) (0)
SEMICONDUCTOR STRUCTURES, LOWDIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA (2013) (0)
VCSEL or LED with inclined resonator without wave line (2005) (0)
Investigation of the formation of InAs QDs in a AlGaAs matrix (2002) (0)
Competition Of Different Recombination Channels In Metamorphic 1.5 μm Range Quantum Dot Lasers On GaAs Substrate (2007) (0)
Optical memory concepts with self-organized quantum dots-material systems and energy-selective charging (2002) (0)
Optical Switching of Double-Barrier Resonant Tunneling AlGaAs/GaAs Diode (1991) (0)
1.3 UM Emission from 2 ML InAs Quantum Dots in a GaAs Matrix (1999) (0)
Light-exciton coupling in semiconductor microcavities of cylindrical and spherical symmetry (2001) (0)
Vertical cavity surface emitting lasers based on vertically coupled quantum dots (1997) (0)
Magnetic Eigenmodes in QD-Based Resonant Active Composites (2000) (0)
INVESTIGATIONS OF InGaN/GaN AND InGaN/InGaN QDS GROWN IN A WIDE PRESSURE MOCVD REACTOR (2007) (0)
High brightness and ultra-narrow beam 850 nm GaAs/AlGaAs photonic band crystal lasers and first uncoupled PBC single-mode arrays (2008) (0)
Self organized InAs-GaAs quantum dots injection laser structure (1996) (0)
Structural studies of stacked InAs quantum dots in a silicon matrix grown by MBE (1999) (0)
Evidence of negative electrorefraction in type-II GaAs/GaAlAs short-period superlattice (2015) (0)
High-power long-wavelength lasers using GaAs-based quantum dots (2001) (0)
Influence of Growth Parameters on the Surface Morphology of MBE Grown GaAs and AlxGa1-xAs Layers (1991) (0)
15 mW of continuous wave single transverse mode output power from planar 960 nm bottom-emitting VCSELs with multiple tapered oxide layers (2010) (0)
Nonlinear Optical Studies of Microstructured GaAs/AlAs (1994) (0)
Surface-Mode Lasing from Optically Pumped InGaN/GaN Heterostructures (1999) (0)
Long-wavelength emission in InGaAsN/GaAs heterostructures with quantum wells (2000) (0)
Vertical Correlations and Anti-Correlations in Multi-Layered Arrays of 2D Quantum Islands (1998) (0)
III-V Heterostructure Lasers with Short Period Superlattice Recombination Region (1991) (0)
Engineering of the radiative recombination rate in quantum dots coupled to the tilted cavity waveguide mode (2006) (0)
Near-field photoluminescence spectroscopy of InGaN quantum dots (2005) (0)
Influence of the position of InGaAs quantum dot array on the spectral characteristics of AlGaAs/GaAs photovoltaic converters (2012) (0)
Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K) (2009) (0)
Studies of the electron spectrum in structures with InGaN quantum dots using photocurrent spectroscopy (2005) (0)
(Si,Ge) islands on Si: A TEM study of growth-correlated structural and chemical properties (2018) (0)
InAs/InGaAs/GaAs quantum dot lasers of 1.3 /spl mu/m range with enhanced optical gain (2002) (0)
Ground and excited state lasing near 1.3-/spl mu/m from self-assembled quantum dots on GaAs substrates (1999) (0)
Progress in quantum dot lasers (2000) (0)
Spontaneous Interlevel Emission from Quantum Dot and Quantum Well Laser Structures (1998) (0)
Recent advances in long-wavelength GaAs-based quantum dot lasers (2003) (0)
Spontaneous IR intersublevel emission from quantum dots conditioned by main interband lasing (1999) (0)
Room Temperature Multi-stacked Quantum Dot Lasers Basic Components Of Threshold Current Density (1997) (0)
Self organized InAs-GaAs quantum dots injection laser structure (1996) (0)
TEM Characterization of 3D InAs QDs Grown under Subcritical Deposition (2013) (0)
Ultra High Speed Submonolayer Quantum-Dot Vertical-Cavity Surface-Emitting Lasers (2006) (0)
Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures by submonolayer migration-stimulated epitaxy (1997) (0)
Phonon-Plasmon Interaction in Tunnelling GaAs/AlAs Superlattices Grown on (311) and (100) Substrates (2001) (0)
120°C 20 Gbit/s operation of 980nm VCSEL based on sub-monolayer growth (2009) (0)
THE TECHNOLOGY OF DIRECT FORMATION OF InAs/GaAs NANOSTRUCTURES DURING MOLECULAR BEAM EPITAXY AND RELATED TECHNIQUES (1997) (0)
Strain-Driven Phenomena upon Overgrowth of Quantum Dots: Activated Spinodal Decomposition and Defect Reduction (2005) (0)
High Speed Performance of 980 nm VCSELs Based on Submonolayer Quantum Dots (2006) (0)
Vertical Coupling of Quantum Islands in the CdSe/ZnSe Submonolayer Superlattices (1998) (0)
HRTEM of Quantum Dot Nanostructures: The First 15 Years (2008) (0)
Inas Nanostructures in a Silicon Matrix: Growth and Properties (1999) (0)
GaAs-based InAs Quantum Dot Lasers of 1.3μm Range (2005) (0)
QUANTUMDOTPHOTONICS: EDGEEMITTER, AMPLIFIERANDVCSEL (2005) (0)
A study of carrier statistics in InGaN/Gan LED structures (2005) (0)
Optical and X-ray diffraction studies of multilayer structures based on InGaN/GaN solid solutions (2009) (0)
Zhores Ivanovich Alferov (on his 80th birthday) (2010) (0)
HRTEM study of growth-correlated properties of (Si,Ge) islands (2003) (0)
Effect of Annealing on Phase Separation in Ternary III-N Alloys (2000) (0)
Formation of Defect-Free InGaAs-GaAs Quantum Dots for 1.3 Micrometers Spectral Range Grown by Metal-Organic Chemical Vapor Deposition (2000) (0)
GaAs-based bipolar cascade InAs/InGaAs quantum dot VCSELs emitting near 1300 nm (2005) (0)
Pecularities of recombination processes in injection lasers based on (In,Ga)As quantum dots leading to the single longitudinal mode operation at room temperature (1995) (0)
Spontaneous Interlevel Emission from InGaAs/AIGaAs Quantum Dot Structures (1998) (0)
Defense Technical Information Center Compilation Part Notice ADP 013033 TITLE : Influence of Annealing on the Formation of InGaAs Quantum Dots in GaAs Matrix During Metal Organic Chemical Vapor Deposition (0)
Measurement of resonant-mode blueshifts in quantum-dot vertical-cavity surface-emitting lasers (1998) (0)
Phonon interactions in InAs/GaAs quantum dots (2008) (0)
Defense Technical Information Center Compilation Part Notice ADP 013169 TITLE : Nitrogen-Activated Phase Separation in InGaAsN / GaAs Heterostructures Grown by MBE DISTRIBUTION : Approved for public release , distribution unlimited (0)
InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm) (2019) (0)
The study of lateral carrier transport in structures with InGaN quantum dots in the active region (2006) (0)
Formation of GaAsN nanoinsertions in a GaN matrix (2001) (0)
Overcoming gain saturation in InAs/GaAs quantum dot lasers (1996) (0)
Resonant Waveguiding and Lasing in Structures with InAs Submonolayers in an AlGaAs Matrix (1998) (0)
Mbe Growth, Structural and Optical Characterization of Inas/Ingaaias Self-Organized Quantum Dots (1999) (0)
100Gb/s short wavelength VCSELs applying a multi-aperture approach (2023) (0)
Far-infrared spontaneous emission from quantum dot and quantum well structures accompanying near-infrared lasing (1998) (0)
Conference-ISSS-4-Surface-phase equilibria in MBE of strained In 1 − x Ga x As heteroepitaxcial layers (2006) (0)
Growth and Characterization of Coherent Quantum Dots Grown by Single- and Multi-Cycle Metal-Organic Chemical Vapour Deposition ( Quantum Dot Structures) (1997) (0)
Modelling Quantum Well Laser Diode Structures (1998) (0)
35 GHz passive mode-locking of InGaAs/GaAs quantum dot lasers at 1.3 /spl mu/m with Fourier-limited pulses (2004) (0)
InAs/InGaAs Quantum Dot Microcavity Diode Structures on GaAs Substrates Emitting in the 1.25–1.33 μm Wavelength Range (2001) (0)
Fabry-Perot and vertical cavity surface emitting InAs quantum dot lasers (1998) (0)
Intrinsic luminescence in GaAs/AlAs ultrathin-layer superlattices (1992) (0)
Excitonic waveguiding and lasing in wide bandgap semiconductor (1998) (0)
Influence of Annealing on the Formation of InGaAs Quantum Dots in GaAs Matrix During Metal Organic Chemical Vapor Deposition (2000) (0)
Relaxation oscillation frequency of self-organized stacked quantum dot lasers at room temperature (1997) (0)
OPTICAL PROPERTIES OF DEEP InGaN QUANTUM DOTS WITH NONEQUILIBRIUM CARRIER STATISTICS (2005) (0)
Temperature characteristics of tilted wave lasers (2016) (0)
Influence of carrier statistics on InGaN quantum dot device performance (2004) (0)
Second harmonic spectroscopy of semiconductor nanostructures (1999) (0)
High-power ultra-fast single- and multi-mode quantum dot lasers with superior beam profile (2004) (0)
Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties (1997) (0)
Large Spectral Splitting of TE and TM Components of QDs in a Microcavity (2001) (0)
Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host (1999) (0)
An analog of free carrier plasma component of carrier induced refractive index in quantum dot lasers (2004) (0)
Defense Technical Information Center Compilation Part Notice ADP 013287 TITLE : A Comparative Study of QD and Nitrogen-Based 1 (0)
Optical Properties and Lasing in CdSe-Submonolayers in a (Zn,Mg)(S,Se) Matrix (1998) (0)
The impact of thermal effects on emission characteristics of asymmetrical AlGAO-waveguide microdisks based on quantum dots (2007) (0)
Structure and Optical Properties of Si/InAs/Si Layers Grown by MBE on Si Substrate at Different Temperatures (2000) (0)
Defense Technical Information Center Compilation Part Notice ADP 012886 (0)
OF THE CONFERENCE DEDICATED TO O . V . LOSEV ( 1903 – 1942 ) ( Nizhni Novgorod , Russia , March 17 – 20 , 2003 ) Si / Ge Nanostructures for Optoelectronics Applications (2003) (0)
Si-Ge Quantum Dot Laser: What Can We Learn From III-V Experience? (2003) (0)
Matrices of 960nm VerticalCavity SurfaceEmitting Lasers (2011) (0)
Formation specifity of InAs/GaAs submonolayer superlattice (2002) (0)
Nano-optoelectronics : From promise to realization (2000) (0)

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