Nathan Newman

Q: What Schools Are Affiliated With Nathan Newman

Nathan Newman is affiliated with the following schools: Arizona State University, Stockholm University, University of California, Berkeley, University of Augsburg, Stanford University

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Nathan Newman

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Mechanical Engineering

#872

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#946

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Applied Physics

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#3131

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Engineering

Nathan Newman's Degrees

PhD Mechanical Engineering Stanford University
Masters Mechanical Engineering Stanford University

Why Is Nathan Newman Influential?

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According to Wikipedia, Nathan Newman is an engineering professor who is Lamonte H. Lawrence Chair in Sold State Science, School for Engineering of Matter, Transport and Energy at Arizona State University in Tempe, Arizona.

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Nathan Newman's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

The advanced unified defect model for Schottky barrier formation (1988) (279)
Bi‐epitaxial grain boundary junctions in YBa2Cu3O7 (1991) (274)
High-field superconductivity in alloyed Mg B 2 thin films (2004) (213)
Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN (2004) (186)
1.54‐μm photoluminescence from Er‐implanted GaN and AlN (1994) (181)
Role of embedded clustering in dilute magnetic semiconductors: Cr doped GaN. (2005) (179)
High-temperature superconducting microwave devices: Fundamental issues in materials, physics, and engineering (1993) (166)
Synthesis, characterization, and modeling of high quality ferromagnetic Cr-doped AlN thin films (2002) (161)
p‐type gallium nitride by reactive ion‐beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg (1994) (146)
Spin lifetimes of electrons injected into GaAs and GaN (2003) (100)
Observation of two in‐plane epitaxial states in YBa2Cu3O7−δ films on yttria‐stabilized ZrO2 (1991) (97)
Large‐area YBa2Cu3O7−δ thin films on sapphire for microwave applications (1992) (93)
On the Fermi level pinning behavior of metal/III–V semiconductor interfaces (1986) (91)
Microwave surface resistance of epitaxial YBa2Cu3O7 thin films on sapphire (1990) (89)
Low-Temperature Structural Transitions in the Phonon-Glass Thermoelectric Material β-Zn4Sb3: Ordering of Zn Interstitials and Defects (2007) (76)
Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin films (1993) (72)
YBa2Cu3O7-δ superconducting films with low microwave surface resistance over large areas (1990) (69)
Electrical study of Schottky barrier heights on atomically clean and air‐exposed n‐InP(110) surfaces (1985) (69)
Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors (2005) (67)
Experimental study of MgB2 decomposition (2001) (65)
Electron microscopy characterization of GaN films grown by molecular-beam epitaxy on sapphire and SiC (1995) (62)
Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights (1987) (60)
Switching at small magnetic fields in Josephson junctions fabricated with ferromagnetic barrier layers (2014) (60)
Internally shunted sputtered NbN Josephson junctions with a TaNx barrier for nonlatching logic applications (2001) (57)
Thermochemistry of MgB/sub 2/ thin film synthesis (2002) (55)
Mechanism and control of the metal-to-insulator transition in rocksalt tantalum nitride (2002) (55)
Double gun off-axis sputtering of large area YBa/sub 2/Cu/sub 3/O/sub 7- delta / superconducting films for microwave applications (1991) (54)
High critical current densities in epitaxial YBa2Cu3O7−δ thin films on silicon‐on‐sapphire (1991) (53)
Suppression of the critical temperature of superconducting NdFeAs(OF) single crystals by Kondo-like defect sites induced by alpha-particle irradiation. (2009) (48)
Effect of metal doping on the low-temperature structural behavior of thermoelectric β-Zn4Sb3 (2007) (48)
Effect of damage by 2 MeV He ions on the normal and superconducting properties of magnesium diboride (2004) (47)
Thermal annealing characteristics of Si and Mg-implanted GaN thin films (1996) (46)
“Pinning” and Fermi level movement at GaAs surfaces and interfaces (1990) (46)
Fabrication and measurement of high T/sub c/ superconducting microbolometers (1991) (46)
Schottky and Ohmic Au contacts on GaAs: Microscopic and electrical investigation (1986) (45)
Schottky barriers on atomically clean n‐InP (110) (1985) (44)
Spin relaxation of electrons and holes in zinc-blende semiconductors (2005) (43)
The advanced unified defect model and its applications (1988) (43)
The mechanisms of Schottky barrier pinning in III-V semiconductors: Criteria developed from microscopic (atomic level) and macroscopic experiments (1986) (43)
Defect energy levels and electronic behavior of Ni-, Co-, and As-doped synthetic pyrite (FeS2) (2012) (42)
Structural properties and superconductivity in the ternary intermetallic compounds MAB (M=Ca, Sr, Ba; A=Al, Ga, In; B=Si, Ge, Sn) (2009) (40)
One-pot synthesis of highly mesoporous antimony-doped tin oxide from interpenetrating inorganic/organic networks (2011) (37)
Experimental determination of the rates of decomposition and cation desorption from AlN surfaces (2001) (36)
Effect of damage by 2 MeV He ions and annealing on Hc2 in MgB2 thin films (2005) (35)
Comparative Study of the Thermoelectric Properties of Amorphous Zn41Sb59 and Crystalline Zn4Sb3 (2009) (35)
Defect annihilation in AlN thin films by ultrahigh temperature processing (2000) (34)
Structural Defects in Heteroepitaxial and Homoepitaxial GaN (1995) (33)
From synchrotron radiation to I-V measurements of GaAs Schottky barrier formation (1990) (32)
The role of Cr substitution on the ferromagnetic properties of Ga1−xCrxN (2004) (31)
Hollow‐anode plasma source for molecular beam epitaxy of gallium nitride (1995) (31)
Experimental results examining various models of Schottky barrier formation on GaAs (1985) (30)
Homoepitaxial growth of GaN using molecular beam epitaxy (1996) (29)
Role of Ni and Zr doping on the electrical, optical, magnetic, and structural properties of barium zinc tantalate ceramics (1999) (29)
Annealing of intimate Ag, Al, and Au–GaAs Schottky barriers (1985) (29)
High-temperature superconductive devices on sapphire (1994) (28)
Microwave loss in the high-performance dielectric Ba(Zn1/3Ta2/3)O3 at 4.2 K. (2012) (28)
Fabrication of niobium titanium nitride thin films with high superconducting transition temperatures and short penetration lengths (2005) (27)
High-temperature superconductive passive microwave devices (1991) (27)
Morphology of Au/GaAs interfaces (1986) (27)
Mechanism for annealing‐induced changes in the electrical characteristics of Al/GaAs and Al/InP Schottky contacts (1987) (27)
Erratum: High-field superconductivity in alloyed Mg B2 thin films (Physical Review B- Condensed Matter and Materials Physics (2005) 71 (012504)) (2005) (27)
Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O3 (1 0 0) thin films (2009) (26)
MgB$_{2}$ Tunnel Junctions with Native or Thermal Oxide Barriers (2006) (26)
Observation of stimulated emission in the near ultraviolet from a molecular beam epitaxy grown GaN film on sapphire in a vertical‐cavity, single pass configuration (1994) (26)
Annealing of intimate Au‐GaAs Schottky barriers: Thick and ultrathin metal films (1985) (25)
Precise control of atomic nitrogen production in an electron cyclotron resonance plasma using N2/noble gas mixtures (1998) (25)
Recent progress towards the development of ferromagnetic nitride semiconductors for spintronic applications (2006) (24)
High-temperature superconductor resonators and phase shifters (1991) (23)
Residual losses in epitaxial thin films of YBa2Cu3O7 from microwave to submillimeter wave frequencies (1991) (23)
Structure–dielectric property relationship for vanadium- and scandium-doped barium strontium titanate (2007) (22)
High temperature growth of AlN by plasma-enhanced molecular beam epitaxy (1999) (22)
Pulsed laser deposition of aluminum nitride and gallium nitride thin films (1998) (22)
Internally shunted Josephson junctions with barriers tuned near the metal–insulator transition for RSFQ logic applications (2006) (22)
Effect of stoichiometry on oxygen incorporation in MgB2 thin films (2007) (20)
SCHOTTKY BARRIER INSTABILITIES DUE TO CONTAMINATION (1988) (20)
The dominance of paramagnetic loss in microwave dielectric ceramics at cryogenic temperatures (2012) (20)
Main Source of Microwave Loss in Transition‐Metal‐Doped Ba(Zn1/3Ta2/3)O3 and Ba(Zn1/3Nb2/3)O3 at Cryogenic Temperatures (2015) (18)
Effect of surface topography on reflection electron energy loss plasmon spectra of group III metals (2006) (18)
Metallic and atomic approximations at the Schottky barrier interfaces (1984) (18)
Metastable Cd4Sb3: a complex structured intermetallic compound with semiconductor properties. (2008) (17)
Fundamental mechanisms responsible for the temperature coefficient of resonant frequency in microwave dielectric ceramics (2017) (17)
Effects of stress on phase separation in InxGa1−xN/GaN multiple quantum-wells (2011) (17)
Origin of dielectric loss in Ba(Co1/3Nb2/3)O3 microwave ceramics (2018) (17)
Large magnetoresistance of thick polymer devices having La0.67Sr0.33MnO3 electrodes (2009) (17)
Stacking faults in quaternary InxAlyGa1-x-yN layers (2008) (16)
Thermochemical analysis of MgB2 synthesis by molecular-beam epitaxy (2004) (16)
Nanoporous delafossite CuAlO2 from inorganic/polymer double gels: a desirable high-surface-area p-type transparent electrode material. (2015) (16)
Effect of oxygen incorporation on normal and superconducting properties of MgB2 films (2008) (15)
First direct observation of EL2-like defect levels in annealed LT-GaAS (1993) (15)
Aging of Schottky diodes formed on air-exposed and atomically clean GaAs surfaces: An electrical study (1988) (15)
Chemical and electrical properties at the annealed Ti/GaAs(110) interface (1988) (15)
A chemical and structural investigation of Schottky and ohmic Au/GaAs contacts (1987) (15)
Pressure dependence of Cu, Ag, and Fe/n-GaAs Schottky barrier heights (2001) (14)
Engineering issues in high-frequency RSFQ circuits (2002) (14)
KINETIC ENERGY DISTRIBUTION OF NITROGEN IONS IN AN ELECTRON CYCLOTRON RESONANCE PLASMA (1998) (14)
Schottky barriers on atomically clean cleaved GaAs (1985) (14)
Control of the structure and surface morphology of gallium nitride and aluminum nitride thin films by nitrogen background pressure in pulsed laser deposition (1998) (14)
Aluminum Schottky barrier formation on arsenic capped and heat cleaned MBE GaAs(100) (1984) (14)
The formation of ordered structures in InGaN layers (2007) (14)
Nanoscale disorder in pure and doped MgB2 thin films (2010) (13)
Fabrication of highly spin-polarized Co2FeAl0.5Si0.5 thin-films (2014) (13)
Criteria for improving the properties of ZnGeAs2 solar cells (2013) (13)
Ordered domains and boundary structure in Ba(Cd1/3Ta2/3)O3 perovskite dielectrics (2004) (13)
Electrical conductivities and Li ion concentration-dependent diffusivities, in polyurethane polymers doped with lithium trifluoromethanesulfonimide (LiTFSI) or lithium perchlorate (LiClO4) (2010) (13)
Leakage-current characteristics of vanadium- and scandium-doped barium strontium titanate ceramics over a wide range of DC electric fields (2009) (12)
Measurement of the coherence length of sputtered Nb/sub 0.62/Ti/sub 0.38/N thin films (2002) (12)
High-temperature superconducting resonators (1992) (12)
Electrical transport properties of ferromagnetic GaxCr1−xN thin films (2006) (11)
Phase separation and atomic ordering in InxAlyGa1−x−yN layers (2008) (11)
Growth of epitaxial pyrite (FeS2) thin films using sequential evaporation (2013) (11)
Thermochemistry of MgB2 Thin Film Synthesis (2002) (11)
The magnetic, electrical and structural properties of copper-permalloy alloys (2017) (10)
Analysis of thin-film systems using nonresonant multiphoton ionization (1988) (10)
A novel technique for synthesizing MgB2 thin films with high upper critical fields (2008) (10)
Atomic ordering in AlxGa1−xN thin-films (2006) (10)
Experimental and theoretical investigation of the structural, chemical, electronic, and high frequency dielectric properties of barium cadmium tantalate-based ceramics (2005) (10)
[0001] composition modulations in Al0.4Ga0.6N layers grown by molecular beam epitaxy (2008) (10)
Atomic Resolution Transmission Electron Microscopy of the Microstructure of Ordered Ba(Cd1/3Ta2/3)O3 Perovskite Ceramics (2006) (10)
Cr on GaAs (110): The effect of electronegativity on the Schottky barrier height (1985) (10)
Microstructure and dielectric properties of Ba(Cd1/3Ta2/3)O3 microwave ceramics synthesized with a boron oxide sintering aid (2004) (9)
Effect of non-stoichiometry on the densification, phase purity, microstructure, crystal structure, and dielectric loss of Ba(Co1/3Nb2/3)O3 ceramics (2017) (9)
Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts (1989) (9)
Exchange biasing of ferromagnetic Cr-doped GaN using a MnO overlayer (2005) (8)
ZnGeAs2 thin films properties: A potentially useful semiconductor for photovoltaic applications (2009) (8)
Submillimeter and microwave residual losses in epitaxial films of Y-Ba-Cu-O and Tl-Ca-Ba-Cu-O (1992) (7)
Magnetic properties of chromium-doped Ni80Fe20 thin films (2018) (7)
Structural, chemical and dielectric properties of ceramic injection moulded Ba(Zn1/3Ta2/3)O3 microwave dielectric ceramics (2006) (7)
Mechanism for nearly ohmic behavior in annealed Au/n-GaAs Schottky diodes (1989) (7)
Growth and characterization of Ba(Cd1/3Ta2/3)O3 thin films (2012) (6)
Electron microscopy characterization of Ba(Cd1/3Ta2/3)O3 microwave dielectrics with boron additive (2004) (6)
Zn(5)Sb(4)In(2-delta) - a ternary derivative of thermoelectric zinc antimonides. (2009) (6)
Thermoelectric properties of Zn5Sb4In2-δ (δ = 0.15) (2012) (6)
Electronic properties of metal/III-V semiconductor interfaces (1985) (6)
Structural, electrical, and thermoelectric properties of CrSi2 thin films (2013) (6)
Incorporation of a frequency-dependent dielectric response for the barrier material in the Josephson junction circuit model (2005) (6)
Characterization of Josephson and quasi-particle currents in MgB2/MgB2 and Pb/Pb contact junctions (2010) (6)
Chapter 4 Thermochemistry of III–N Semiconductors (1997) (6)
Chemical reaction at the In on GaAs(110) interface (1986) (6)
Electrical properties of AsxSe1−x (x ≤ 0.05) Mott-barriers (2011) (5)
Effect of α-particle irradiation on a NdFeAs(O,F) thin film (2018) (5)
Analysis of submicron Cu–Ta–SiO2 structures by highly charged ion secondary ion mass spectroscopy (1999) (5)
Large Uniaxial Anisotropy Induced in Soft Ferromagnetic Thin Films by Oblique Deposition of Underlayer (2018) (5)
Fundamental Materials-Issues involved in the Growth of GaN by Molecular Beam Epitaxy (1994) (5)
Effect of Rb and Cs doping on superconducting properties of MgB2 thin films (2007) (5)
Influence of surface topography on in situ reflection electron energy loss spectroscopy plasmon spectra of AlN, GaN, and InN semiconductors (2011) (5)
High-temperature superconducting resonators (1991) (5)
The Structure and Electrical Properties of Au Contacts to GaAs (1985) (5)
Metal―nonmetal transition in the sphalerite-type solid solution [ZnSnSb2]1―x[2(InSb)]x (2009) (5)
Fabrication and measurement of high Tc superconducting microbolometers (1990) (4)
Investigations of the disorder in the TaxN thin films: On the first order Raman spectrum of the rock salt crystal structure (2013) (4)
Errata: ``Synthesis, characterization, and modeling of high quality ferromagnetic Cr-doped AlN thin films'' [Appl. Phys. Lett. 82, 3047 (2003)] (2004) (4)
High temperature superconducting transresistance amplifiers for far infrared detectors (1992) (4)
Erratum: “Switching at small magnetic fields in Josephson junctions fabricated with ferromagnetic barrier layers” [Appl. Phys. Lett. 104, 022602 (2014)] (2014) (4)
Improvement in the Magnetic Properties of Ni–Fe Thin Films on Thick Nb Electrodes Using Oxidation and Low-Energy Ar Ion Milling (2018) (4)
Erratum: ‘‘Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin films’’ [Appl. Phys. Lett. 62, 1242 (1993)] (1993) (4)
Influence of substrate temperature on properties of pyrite thin films deposited using a sequential coevaporation technique (2019) (4)
Low-temperature transport properties of TaxN thin films (0.72 ⩽ x ⩽ 0.83) (2010) (4)
Experimental study of the kinetically-limited decomposition of ZnGeAs2 and its role in determining optimal conditions for thin film growth (2012) (3)
Synthesis and characterization of high quality ferromagnetic Cr-doped GaN and AlN thin films with Curie temperatures above 900K (2003) (3)
Metallization of GaN thin films prepared by ion beam assisted molecular beam epitaxy (1994) (3)
Cd13−xInySb10 (x≈2.7, y≈1.5): An Interstitial‐Free Variant of Thermoelectric β‐Zn4Sb3 (2009) (3)
Barrier heights from ohmic to bandgap: Modified Al:GaAs Schottky diodes by MBE (1983) (3)
High Energy and Spatial Resolution EELS Band Gap Measurements Using a Nion Monochromated Cold Field Emission HERMES Dedicated STEM (2014) (3)
Erratum: “The dominance of paramagnetic loss in microwave dielectric ceramics at cryogenic temperatures” [Appl. Phys. Lett. 101, 252901 (2012)] (2013) (3)
Better Resolution of High-Spin Cobalt Hyperfine at Low Frequency: Co-Doped Ba(Zn1/3Ta2/3)O3 as a Model Complex (2018) (3)
Electrical Study of Schottky Barriers on Cleaved InP and GaAs (110) Surfaces (1985) (3)
Scanning Tunneling Microscopy of Si Donors in GaAs (1993) (3)
The Influence of Current Stressing on the Structure of Ag Contacts to GaAs (1987) (3)
Characterization of ZnGeAs2 thin films produced by pulsed laser deposition (2009) (3)
Properties Of Homoepitaxially Mbe-Grown Gan (1996) (3)
Effects of processing on electrical properties of YBa2Cu3O7 films. II. In situ deposition processes (1994) (3)
Low-temperature synthesis of 2D anisotropic MoTe2 using a high-pressure soft sputtering technique (2020) (2)
Growth and characterization of epitaxial Ba(Co,Zn)1/3Nb2/3O3 thin films (2014) (2)
Disruption, Metallization, and Electrical Properties of Metal GaAs and InP Semiconductor Interfaces (1989) (2)
Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures (2020) (2)
Off-axis sputter deposition of thin films (1990) (2)
Structural, Dielectric, and Optical Properties of Ni-Doped Barium Cadmium Tantalate Ceramics (2006) (2)
Kinetic Processes in Vapor Phase Epitaxy (2015) (2)
Summary Abstract: Ni and Pd Schottky barriers on GaAs(110) (1985) (2)
Clean to dirty limit and Tc suppression in NdFeAsO0.7F0.3 studied by Hc2 analysis (2018) (2)
Response to ‘‘Comment on ‘Observation of two in‐plane epitaxial states in YBa2Cu3O7−δ films on yttria stabilized ZrO2’ ’’ (1991) (2)
Magnetically tuning the loss tangent in La(Al1−xFex)O3 using low field electron paramagnetic resonance transitions (2020) (2)
In-situ electron paramagnetic resonance studies of paramagnetic point defects in superconducting microwave resonators (2016) (2)
Effect of heat treatment on the properties of non-stoichiometric Ba3CoNb2O9 ceramics: evaluation of crystal structure, order-disorder behavior, and dielectric characteristics (2022) (1)
Atomic Structure of Metal/GaAs Interfaces: The Role of Defects, Epitaxy, and Morphology (1993) (1)
Mg-IV-V chalcopyrites in thin film tandem photovoltaic cells (2009) (1)
Correspondence between Microwave and Submillimeter Absorptivity in Epitaxial Thin Films of YBa{sub 2}Cu{sub 3}O{sub 7} (1991) (1)
Saturation and intrinsic dynamics of fluxons in NbTi and MgB2 (2007) (1)
Electrical Study of Metal/Gaas Interfaces (1989) (1)
Theoretical and Experimental Study of Barium Zinc-Cadmium Tantalate-based Microwave Dielectrics (2003) (1)
The Materials, Physics and Engineering of High Temperature Superconductor Microwave Devices (1993) (1)
Double gun off-axis sputtering of large area YBa sub 2 Cu sub 3 O sub 7 minus. delta (1991) (1)
Summary Abstract: Structural and electrical properties of epitaxial YBCO films on Si (2017) (1)
First principles study of phase stability in Ba-based tantalate complex double perovskites (2021) (1)
Oxidized bacterial cellulose functionalized with SiO2 nanoparticles as a separator for lithium-metal and lithium–sulfur batteries (2022) (1)
High‐temperature superconductive delay lines and filters (2008) (1)
Characterization of the Chemical and Electrical Properties of Defects at the Niobium-Silicon Interface (2020) (1)
Effect of Helium Ion Irradiation on the Tunneling Behavior in Niobium/Aluminum–Aluminum Oxide/Niobium Josephson Junctions (2013) (1)
Zn5Sb4In2-δ — A Ternary Derivative of Thermoelectric Zinc Antimonides. (2009) (0)
In-situ characterization of performing degrading defects in superconductor- dielectric microwave resonators (2016) (0)
Effect of ion irradiation and annealing on scattering processes in MgB2 (2006) (0)
Growth and Characterization of Pyrite Thin Films for Photovoltaic Applications by Alex Wertheim A Thesis Presented in Partial Fulfillment of the Requirements for the Degree Masters of Science Approved November 2014 by the Graduate Supervisory Committee: Nathan Newman, Chair (2014) (0)
Electrical study of metal/group 3-5 semiconductor interfaces: Comparison with the atomic-level studies (1987) (0)
Erratum: Electromagnetic bandgap resonators synthesized using ceramic injection molding (2014) (0)
Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy (1993) (0)
Electromagnetic bandgap resonators synthesized using ceramic injection molding (2014) (0)
Infrared phonon structure in epitaxial films of Tl sub 2 Ca sub 2 Ba sub 2 Cu sub 3 O sub 10 at low temperatures (1992) (0)
High-T{sub c} Bolometers (1991) (0)
Electrical and Structural Properties of Ti Contacts on an Atomically Clean N-Type GaAs Surface (1992) (0)
Mechanism for dielectric loss and temperature dependence of dielectric constant (ε) in modern microwave materials (2016) (0)
MIJ-NSR Volume 1, Article 42 (1998) (0)
Development of magnetically switchable high permittivity microwave dielectrics using La(Al 1‐x Fe x )O 3 (2021) (0)
Electrical and structural properties of Tantalum nitride thinfilms near metal-insulator transition (2006) (0)
Ordered Structures in Ba(Cd 1/3 Ta 2/3 )O 3 Microwave Ceramics: A Transmission Electron Microscopy Study (2003) (0)
Introduction of Carrier Scattering in MgB2, and its Effect on both Normal and Superconducting Properties, especially Hc2 (2008) (0)
Analysis of Proximitized Molybdenum-Copper Superconducting Bilayers (2014) (0)
Exchange biasing of (Ga,Cr)N thin films using a MnO layer (2005) (0)
Fabrication of sensitive high Tc bolometers (1990) (0)
High- Tc bolometers (1991) (0)
Effect of oxygen alloying on scattering processes in MgB$_{2}$ (2007) (0)
Effect of ion damage on the electrical properties of MgB2 (2005) (0)
Residual Losses in Epitaxial Thin Films of YBa{sub 2}Cu{sub 3}O{sub 7} (1991) (0)
Low-Temperature Structural Transitions in the Phonon-Glass Thermoelectric Material β-Zn4Sb3: Ordering of Zn Interstitials and Defects. (2007) (0)
Spectroscopic Ellipsometry of InSb in the Terahertz Region (2021) (0)
II-IV-V Based Thin Film Tandem Photovoltaic Cell (2012) (0)
Fabrication of highly spin-polarized Co 2 FeAl 0 . 5 Si 0 . 5 thin-films (2017) (0)
We have developed a new way of making grain boundary junctions in YBa&u30T thin films by controlling the in-plane epitaxy of the deposited film using seed and buffer layers. (2005) (0)
Erratum: “Internally shunted sputtered NbN Josephson junctions with a TaNx barrier for nonlatching logic applications” [Appl. Phy. Lett. 78, 99 (2001)] (2002) (0)
Ge thin-films with tantalum diffusion-barriers for use in Nb-based superconductor technology (2021) (0)
Response to Comment on Observation of two in-plane epitaxial states in YBa sub 2 Cu sub 3 O sub 7 minus. delta. films on yttria stabilized ZrO sub 2 '' ' (1991) (0)
MBE growth and ultrahigh temperature processing of high-quality AlN films (1999) (0)
GaN for short-wavelength light emitting devices: growth kinetics and techniques (1993) (0)
T$_{c}$ suppression in NdFeAs(OF) single crystal by Kondo-like scattering induced by $\alpha $-particle irradiation (2010) (0)
Low-temperature Transport Properties of Ta X N Thin Films (0.72 ≤ X ≤ 0.83) Low-temperature Transport Properties of Ta X N Thin Films (0.72 X 0.83) (2010) (0)
Cd(13-x)In(y)Sb10 (x approximately 2.7, y approximately 1.5): an interstitial-free variant of thermoelectric beta-Zn4Sb3. (2009) (0)
Metal—Nonmetal Transition in the Sphalerite‐Type Solid Solution [ZnSnSb2]1‐x[2(InSb)]x. (2009) (0)
Erratum to “Experimental determination of the rates of decomposition and cation desorption from AIN surfaces” (2002) (0)
The Microstructure of ZrN/GaAs Schottky Contacts and its Correlation with Electrical Properties. (1991) (0)
Observation of stimulated emission from an MBE grown GaN film on sapphire (1993) (0)
Development of Improved Microwave Dielectric Materials and Devices using Advanced Experimental and Theoretical Methods (2008) (0)
Cd13-xInySb10 (x ≈ 2.7, y ≈ 1.5): An Interstitial-Free Variant of Thermoelectric β-Zn4Sb3. (2009) (0)
DETERMINATION OF THE INTERFACIAL FERMI LEVEL POSITION FOR NOBLE METALS ON GaAs(110). (1985) (0)
Upper critical field study of MBE grown MgB$_2$ thin films (2008) (0)
Effects of helium ion damage on the two-band superconductivity in MgB$_{2}$ thin films (2006) (0)
1.54-µm Photoluminescence from Er-Implanted A1N & GaN (1995) (0)
Transport Properties of Ga$_{x}$Cr$_{1-x}$N thin films synthesized by MBE (2006) (0)
Epitaxial Growth of BaZn 1/3 Ta 2/3 O 3 Thin-Films for Microwave Applications (1999) (0)
Structural and electrical properties of epitaxial YBCO films on Si (Abstract Only). (1991) (0)

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