Nathan W. Cheung

Nathan W. Cheung's AcademicInfluence.com Rankings

Nathan W. Cheung

Engineering

#7213

World Rank

#8577

Historical Rank

Electrical Engineering

#2229

World Rank

#2335

Historical Rank

Applied Physics

#2447

World Rank

#2488

Historical Rank

engineering Degrees

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Engineering

Nathan W. Cheung's Degrees

PhD Electrical Engineering Stanford University
Masters Electrical Engineering Stanford University
Bachelors Electrical Engineering Stanford University

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Nathan W. Cheung's Published Works

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Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Extraction of Schottky diode parameters from forward current-voltage characteristics (1986) (2131)
Damage-free separation of GaN thin films from sapphire substrates (1998) (334)
Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off (1999) (325)
Plasma immersion ion implantation—a fledgling technique for semiconductor processing (1996) (324)
InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off (2000) (171)
Proximity gettering with mega-electron-volt carbon and oxygen implantations (1988) (143)
Heterogeneous integration of CdS filters with GaN LEDs for fluorescence detection microsystems (2004) (135)
Electromigration characteristics of copper interconnects (1993) (122)
Plasma immersion ion implantation for ULSI processing (1991) (112)
Projecting interconnect electromigration lifetime for arbitrary current waveforms (1990) (102)
Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate (1999) (84)
Thermal stability of titanium nitride for shallow junction solar cell contacts (1981) (83)
Gettering of gold and copper with implanted carbon in silicon (1988) (77)
Plasma-immersion ion implantation (1996) (76)
High-current failure model for VLSI interconnects under short-pulse stress conditions (1997) (76)
Hydrogen induced silicon surface layer cleavage (1997) (70)
Investigation of titanium—nitride layers for solar-cell contacts (1980) (66)
Metal-semiconductor interfacial reactions - Ni/Si system (1981) (65)
Lattice-Location Experiment of the Ni-Si Interface by Thin-Crystal Channeling of Helium Ions (1981) (64)
Plasma immersion ion implantation for semiconductor processing (1996) (63)
Ni on Si(111): Reactivity and Interface Structure (1980) (63)
An electromigration failure model for interconnects under pulsed and bidirectional current stressing (1994) (62)
Metal electromigration damage healing under bidirectional current stress (1993) (61)
Formation of buried oxide in silicon using separation by plasma implantation of oxygen (1995) (60)
Electromigration interconnect lifetime under AC and pulse DC stress (1989) (59)
Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser lift-off (1999) (54)
Structural and optical quality of GaN/metal/Si heterostructures fabricated by excimer laser lift-off (1999) (53)
Studies of the Si‐SiO2 interface by MeV ion channeling (1979) (52)
Instrumental and process considerations for the fabrication of silicon-on-insulators (SOI) structures by plasma immersion ion implantation (1998) (51)
Structural and chemical characterization of free-standing GaN films separated from sapphire substrates by laser lift-off (2000) (51)
Profile studies of MeV ions implanted into Si (1987) (49)
Thermal annealing characteristics of Si and Mg-implanted GaN thin films (1996) (46)
Plasma immersion ion implantation of SiF4 and BF3 for sub‐100 nm P+/N junction fabrication (1991) (45)
Preparation of large‐area monocrystalline silicon thin windows (1980) (43)
Ion-cut silicon-on-insulator fabrication with plasma immersion ion implantation (1997) (43)
Damage induced through megavolt arsenic implantation into silicon (1982) (43)
Studies of Ag photodoping in GexSe1−x glass using microlithography techniques (1985) (42)
Epitaxial growth of the nickel disilicide phase (1980) (41)
Electromigration reliability of tungsten and aluminum vias and improvements under AC current stress (1993) (41)
Buried dopant and defect layers for device structures with high-energy ion implantation (1989) (40)
Plasma immersion ion implantation with dielectric substrates (1996) (40)
Modeling and characterization of electromigration failures under bidirectional current stress (1996) (40)
Sub-100 mn p+/n junction formation using plasma immersion ion implantation (1991) (40)
Schottky barrier degradation of the W/GaAs system after high-temperature annealing (1986) (39)
Circuit reliability simulator for interconnect, via, and contact electromigration (1992) (39)
Thermal stability and barrier height enhancement for refractory metal nitride contacts on GaAs (1987) (38)
Characteristics of sub-100-nm p/sup +//n junctions fabricated by plasma immersion ion implantation (1993) (37)
Refractory metal nitride rectifying contacts on GaAs (1987) (37)
Comparison of experimental target currents with analytical model results for plasma immersion ion implantation (1995) (36)
Analytical modeling of plasma immersion ion implantation target current using the SPICE circuit simulator (1994) (34)
Enhancement of (In,Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon (2002) (33)
The crystalline to amorphous transformation in silicon (1983) (32)
The influence of nitrogen ion energy on the quality of GaN films grown with molecular beam epitaxy (1995) (29)
Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers (1993) (29)
On the temperature variation of threshold voltage of GaAs MESFETs (1992) (28)
Separation of plasma implantation of oxygen to form silicon on insulator (1997) (28)
Optical spectroscopy of GaN microcavities with thicknesses controlled using a plasma etchback (2001) (28)
Shallow junction formation by plasma immersion ion implantation (1997) (27)
Conformal implantation for trench doping with plasma immersion ion implantation (1991) (27)
Growth kinetics of Pd2Si from evaporated and sputter-deposited films (1981) (27)
Microcavity engineering by plasma immersion ion implantation (1998) (27)
Pd/Si plasma immersion ion implantation for selective electroless copper plating on SiO2 (1992) (27)
Modeling electromigration lifetime under bidirectional current stress (1995) (27)
Electromigration under time-varying current stress (1998) (27)
Electromigration performance of electroless plated copper/Pd-silicide metallization (1992) (26)
Characterization of contact and via failure under short duration high pulsed current stress (1997) (26)
Effects of self-heating on integrated circuit metallization lifetimes (1989) (26)
Buried oxide formation by plasma immersion ion implantation (1995) (25)
Contact-electromigration-induced leakage failure in aluminum-silicon to silicon contacts (1985) (25)
Cross‐section transmission electron microscopy study of carbon‐implanted layers in silicon (1990) (25)
Excimer laser annealing of silicon nanowires (2007) (25)
Sample stage induced dose and energy nonuniformity in plasma immersion ion implantation of silicon (1998) (24)
A plasma immersion ion implantation reactor for ULSI fabrication (1991) (24)
Nucleation mechanism of SPIMOX (separation by plasma implantation of oxygen) (1996) (23)
Modeling of oxide charging effects in plasma processing (1996) (23)
Separation by plasma implantation of oxygen (SPIMOX) operational phase space (1997) (21)
Tungsten silicide Schottky contacts on GaAs (1986) (20)
PMOS integrated circuit fabrication using BF3 plasma immersion ion implantation (1992) (19)
A new method for determining the secondary electron yield dependence on ion energy for plasma exposed surfaces (1996) (19)
Megavolt arsenic implantation into silicon (1982) (19)
Photoinduced diffusion of Ag in GexSe1−x glass (1985) (17)
Recrystallization of amorphous gallium arsenide by ion beams (1984) (16)
Plasma immersion Pd ion implantation seeding pattern formation for selective electroless Cu plating (1991) (16)
Electronic defects in silicon induced by MeV carbon and oxygen implantations (1989) (15)
A diffusion model of subthreshold current for GaAs MESFETs (1991) (15)
Transfer of patterned ion-cut silicon layers (1998) (15)
Thickness uniformity of silicon-on-insulator fabricated by plasma immersion ion implantation and ion cut (1999) (15)
Anomalous behavior of shallow BF3 plasma immersion ion implantation (1994) (15)
Structure and electrical properties of TiN/GaAs Schottky contacts (1988) (14)
n+/p ultra-shallow junction formation with plasma immersion ion implantation (1998) (14)
Synthesis of SiGe and SiGeC alloys formed by Ge and C implantation (1996) (14)
Effects of ozone oxidation on interfacial and dielectric properties of thin HfO2 films (2008) (14)
Electromigration characteristics of tungsten plug vias under pulse and bidirectional current stressing (1991) (13)
Modeling of leakage mechanisms in sub‐50 nm p+‐n junctions (1996) (13)
Electromigration design rules for bidirectional current (1996) (13)
Observation of multiple precipitate layers in MeV Au++‐implanted silicon (1990) (13)
Observation of multiple precipitate layers in MeV Au++‐implanted silicon (1990) (13)
MeV Implantation In Semiconductors (1985) (13)
Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut (1998) (12)
Defect control during solid phase epitaxial growth of SiGe alloy layers (1993) (12)
Electromigration characteristics of TiN barrier layer material (1995) (12)
Plasma Immersion ion Implantation of Semiconductors (1992) (12)
Complementary metal‐oxide‐silicon field‐effect transistors fabricated in 4‐MeV boron‐implanted silicon (1984) (12)
Low-temperature processing of shallow junctions using epitaxial and polycrystalline CoSi2 (1995) (12)
Temperature dependence of GaAs metal-semiconductor field effect transistor threshold voltage (1988) (12)
Combined impurity gettering effects of helium-induced cavities and oxygen precipitates created by plasma immersion ion implantation (1997) (11)
Reliability simulator for interconnect and intermetallic contact electromigration (1990) (11)
Processing considerations with plasma immersion ion implantation (2002) (11)
Metal vapor vacuum arc ion implantation for seeding of electroless Cu plating (1991) (11)
Comparison of electromigration reliability of tungsten and aluminum vias under DC and time-varying current stressing (1992) (11)
A plasma immersion implantation system for materials modification (2001) (11)
Modeling and experiments of waveform effects on oxide charging in plasma immersion ion implantation [MOS ICs] (1997) (10)
Planarized Copper Interconnects by Selective Electroless Plating (1992) (10)
A new method for preventing CMOS latch-up (1984) (10)
Pulsed Excimer Laser Processing of AlN/GaN Thin Films (1996) (10)
Electromigration in Al/Si contacts—Induced open-circuit failure (1986) (9)
Thermal analysis of the fusion limits of metal interconnect under short duration current pulses (1996) (9)
Application of plasma immersion ion implantation doping to low-temperature processed poly-Si TFTs (1998) (9)
Ion beam processing of advanced electronic materials (1989) (9)
Hybrid integration of CdS filters with GaN LEDs for biophotonic chips (2003) (8)
Fabrication of silicon and oxide membranes over cavities using ion-cut layer transfer (2000) (8)
The effects of annealing encapsulant and ambient on the barrier height of WNx /GaAs contact and self-aligned gate field effect transistor fabrication (1988) (8)
Plasma doping dosimetry (1997) (7)
Plasma Immersion Ion Implantation for Impurity Gettering in Silicon (1989) (7)
Photo-Polymer Wafer Bonding for Double Layer Transfer (2003) (7)
Modelling of charging effects in plasma immersion ion implantation (1995) (7)
Effects of high current pulses on integrated circuit metallization reliability (1988) (7)
Recent Applications of Plasma Immersion Ion Implantation (1996) (7)
Semiconductor processing with plasma implantation (1993) (7)
Characterization and modeling of electromigration failures in multilayered interconnects and barrier layer materials (1996) (7)
The Genesis Process/sup TM/: a new SOI wafer fabrication method (1998) (7)
Parasitic effects of surface states on GaAs MESFET characteristics at liquid-nitrogen temperature (1989) (7)
Wafer charging monitored by high frequency and quasi-static C–V measurements (1993) (7)
Impurity Gettering by Implanted Carbon in Silicon (1989) (6)
GaN microcavities formed by laser lift-off and plasma etching (2002) (6)
Modeling of energy distributions for plasma implantation (2001) (6)
Direct Solid State Phase Transformation from Co to Epitaxial CoSi2 in Co / Thin Ti / (100) Si Structure and its Application for Shallow Junction Formation (1993) (6)
Effects of high energy boron ions implanted in MOSFETs (1987) (5)
A New Method to Extract Bulk Carrier Mobility in Germanium-on-Insulator (2008) (5)
Donor complex formation due to a high‐dose Ge implant into Si (1994) (5)
Fundamental Materials-Issues involved in the Growth of GaN by Molecular Beam Epitaxy (1994) (5)
Layer Transfer by Bonding and Laser Lift-Off (2004) (5)
Low temperature Si layer transfer by direct bonding and mechanical ion cut (2003) (5)
Low Temperature Si Direct Bonding by Plasma Activation (2000) (5)
Plasma immersion ion implantation reactor design considerations for oxide charging (1996) (5)
Calculating plasma damage as a function of gate oxide thickness (1998) (4)
Selective Copper Plating in Silicon Dioxide Trenches with Metal Plasma Immersion Ion Implantation (1991) (4)
Polycrystalline silicon layer transfer by ion-cut (2003) (4)
Plasma Immersion Ion Implantation and (1990) (4)
Plasma doping optimization for ultra-shallow junctions (1997) (4)
Forming Gas Annealing Characteristics of Germanium-on-Insulator Substrates (2008) (4)
Structural Characterization Of Laser Lift-Off GaN (2000) (4)
The characterization and optimization of masked ion beam lithography with 〈100〉 silicon channeling masks (1987) (4)
Modeling electromigration failures in TiN/Al-alloy/TiN interconnects and TiN thin films (1995) (4)
Ultra-shallow n+p junction formed by PH3 and AsH3 plasma immersion ion implantation (2002) (3)
Plasma immersion ion implantation for ULSI devices (1995) (3)
Formation of silicon on insulator (SOI) with separation by plasma implantation of oxygen (SPIMOX) (1994) (3)
Electromigration failures under bidirectional current stress (1998) (3)
Real Time Observation and Characterization of Dislocation Motion, Nitrogen Desorption and Nanopipe Formation in GaN (2000) (3)
Fabrication and characteristics of Germanium-On-Insulator substrates (2008) (3)
Megavolt Bioron and Arsenic Implantation into Silicon (1983) (3)
Thermal and mechanical separations of silicon layers from hydrogen pattern-implanted wafers (2001) (3)
Multiple species implants with pulsed and DC plasma immersion ion implantation (1998) (3)
TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon (1992) (3)
High energy implantation masking with polyimide (1989) (3)
Metallization of GaN thin films prepared by ion beam assisted molecular beam epitaxy (1994) (3)
The Influence Of Ion Implantation On Solid Phase Epitaxy Of Amorphous Silicon Deposited By LPCVD (1985) (3)
Epitaxial CoSi2 Layer Formation Technology on (100) Si and Its Application for Reduced Leakage, Ultra Shallow p+/n Junction (1993) (3)
The heterogeneous integration approach for advanced semiconductor materials and microsystems (2004) (3)
Operation of GaAs MESFETs at cryogenic temperatures (1989) (2)
The Effects of Plasma Immersion Ion Implantation on Thermal Hillock Formation (1991) (2)
Si and SiO2 layer transfer induced by mechanical residual stress (2006) (2)
Abstract: MeV ion scattering from thin Si single crystals: A novel approach to interface studies (1979) (2)
Characterization of Ge and C Implanted Si l-x Ge x and Si l-y-z Ge y C z Layers (1993) (2)
Modeling electromigration lifetime under pulsed and AC current stress (1993) (2)
Layer Transfer of SOI Structures Using a Pre‐Stressed Bonding Layer (2006) (2)
Solid Phase Epitaxy of Implanted Si-Ge-C Alloys (1995) (2)
Formation of Buried Porous Silicon Structure by Hydrogen Plasma Immersion Ion Implantation (1996) (2)
The effect of collisions on pulsed and DC plasma immersion ion implantation (1998) (2)
odeling and Characterization of Electro (1996) (2)
SiGe and SiGeC surface alloy formation using high dose implantation and solid phase epitaxy (1996) (2)
Steady-state, direct-current (DC) plasma immersion ion implantation (PIII) for planar samples (2000) (2)
Ultra-Shallow P+/N Junctions Formed by SiF4 Preamorphization and BF3 Implantation Using Plasma Immersion Ion Implantation (1992) (2)
Rapid Thermal Processing of Shallow Junctions Using Epitaxial CoSi2 as a Doping Source (1994) (2)
Electromigration characteristics of Al/W via contact under unidirectional and bidirectional current conditions (1991) (2)
InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching (2001) (2)
SELECTIVE UV-LASER PROCESSING FOR LIFT-OFF OF GaN THIN FILMS FROM SAPPHIRE SUBSTRATES (1998) (2)
Defect-Minimized SiGe Layer Using Ion Beam Synthesis (1992) (2)
Characterization of Ultra-Shallow P+/N Diodes Fabricated using Plasma Immersion Ion Implantation* (1993) (1)
Ion-Beam Modification of Silicided Ti/Si Contacts (1985) (1)
Effect of antenna structures on charging damage in PIII (1996) (1)
Reducing the Effects of Plasma Proximity in Plasma Immersion Ion Implantation (1997) (1)
Low Energy Ion Beam Modification of AlNxOy Thin Film for Insulated Gate Field Effect Transistors (1992) (1)
Image sensor as a three-channel spectrometer with application to in situ monitoring of wet etching. (2011) (1)
The influence of the sapphire substrate on the temperature dependence of the GaN bandgap (1999) (1)
Diffusion of A Deposited GeSe Film in GaAs using Ion-Beam Mixing (1985) (1)
SOI on buried cavity patterns using ion-cut layer transfer (1998) (1)
Self-Contained Optical Microsystems for Metrology and Chemical Sensing (2011) (1)
Damage and in-situ annealing during ion implantation (1982) (1)
Pixel-to-point Transfer: a Process for Integrating Individual GaN-based Light-emitting Devices in o Heterogeneous Microsystems (2003) (1)
Determination of the doping profile near the metal-semiconductor interface of ZrN/GaAs contacts (1988) (1)
Electromigration Performance of Electroless Plated Copper (1992) (1)
Ion beam modification of the Y-Ba-Cu-O system with the MEVVA high current metal ion source (1989) (1)
Real Time Observations of Nanopipe Formation, Dislocation Motion and Nitrogen Desorption in GaN (2000) (1)
Competitive Oxidation During Buried Oxide Formation Using Separation by Plasma Implantation of Oxygen (Spimox) (1995) (1)
Operational phase-space of separation by plasma implantation of oxygen (SPIMOX) (1996) (0)
Lawrence Berkeley National Laboratory Recent Work Title Advanced Far Infrared Detector and Double Donor Studies in Ge Permalink (2013) (0)
Reducing Dislocation Density by Sequential Implantation of Ge and C in Si (1993) (0)
Recent progress of heterogeneous integration for semiconductor materials and microsystems (2006) (0)
Epitaxial CoSi 2 Layer Formation Technology on ( 100 ) Si and Its Application for Reduced Leakage , Ultra Shallow p + / n Junction (2008) (0)
Source/drain profile engineering with plasma implantation (1996) (0)
Implantation Induced Charge Trapping and Interface States Generation in Si-SiO2 System (1985) (0)
Ultra-shallow 28-88 nm n/sup +//p junction formation using PH/sub 3/ and AsH/sub 3/ plasma immersion ion implantation (1998) (0)
Selective processing of semiconductor nanowires by polarized visible radiation (2008) (0)
Analytical Circuit Model Approach to Charging Damage in Plasma/implantation Processing (1996) (0)
Materials characterization : symposium held April 15-17, 1986, Palo Alto California, U.S.A. (1986) (0)
Ion beam processing of advanced electronic materials : symposium held April 25-27, 1989, San Diego, California, U.S.A. (1989) (0)
MeV ion scattering from thin Si single crystals: Anovel approach to interface studies (1979) (0)
VA-4 Shannon contact formation on GaAs with interfacial nitrogen incorporation (1987) (0)
Megavolt Ion Implantation Into Silicon (1984) (0)
Plasma Immersion Ion Implantation: A Perspective (1992) (0)
Fabrication of thin film InGaN LED membranes by laser liftoff (1999) (0)
Comparison of AIN Films Grown by RF Magnetron Sputtering and Ion-Assisted Molecular Beam Epitaxy (2013) (0)
Conformal doping of high aspect ratio trenches by plasma immersion ion implantation (PIII) (1993) (0)
Anisotropic Delamination Energy of Bonded Rippled Silicon Surfaces Created by Ar + Bombardment (2003) (0)
The effects of mask scattering on photoresist profiles in masked ion beam lithography (1985) (0)
Gettering effects of helium cavities created by high dose plasma immersion ion implantation (1996) (0)
An economical fabrication technique for SIMOX using plasma immersion ion implantation (1995) (0)
Layer transfer and characterization of SOI and GeOI substratts (2006) (0)
Two-dimensional implantation profile simulator — RETRO (1993) (0)
Interface and Bulk Oxide Damage Induced by Boron Implantation (1985) (0)
United States Patent ( 19 ) Jastrzebski et al . ( 54 ) METHOD FOR THINNING SILICON 75 ) Inventors : (2017) (0)
Plasma Immersion Ion Implantation for Electronic Materials Applications (1995) (0)
Research in VLSI Reliability. (1986) (0)
Rapid Themal Annealing of Shallow. Diffused Contact Regions in GaAs (1985) (0)
The effect of subsurface doping on gate oxide charging damage (1998) (0)
Fractional implantation area effects on patterned ion-cut silicon layer transfer (1999) (0)
SOI MOSFET on low cost SPIMOX substrate (1998) (0)
A New Method for Determinin Electron Yield Dependence on for Plasma Exposed e (1996) (0)
Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy (1993) (0)
Microcavities formed by hydrogen or helium plasma immersion ion implantation (1998) (0)
Effect Of Gate Oxide Thickness On Charging Damage In PIII (1997) (0)
The effect of wells on gate oxide charging during plasma processing (1996) (0)
Plasma Immersion Ion Implantation for Shallow Junctions and Other Applications (1997) (0)
n/sup +//p ultra-shallow junction formation with plasma immersion ion implantation (1997) (0)
PLASMA IMMERSION ION IMPLANTATION (PIII) FOR INTEGRATED CIRCUIT MANUFACTURING; THIRD QUARTERLY PROGRESS REPORT (2015) (0)

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