Nick Holonyak
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American physicist
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Physics
Why Is Nick Holonyak Influential?
(Suggest an Edit or Addition)According to Wikipedia, Nick Holonyak Jr. was an American engineer and educator. He is noted particularly for his 1962 invention and first demonstration of a semiconductor laser diode that emitted visible light. This device was the forerunner of the first generation of commercial light-emitting diodes . He was then working at a General Electric Company research laboratory near Syracuse, New York. He left General Electric in 1963 and returned to his alma mater, the University of Illinois at Urbana-Champaign, where he later became John Bardeen Endowed Chair in Electrical and Computer Engineering and Physics.
Nick Holonyak's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS (1962) (758)
- Disorder of an AlAs‐GaAs superlattice by impurity diffusion (1981) (542)
- Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices (1990) (525)
- Quantum-well heterostructure lasers (1980) (457)
- Atom diffusion and impurity‐induced layer disordering in quantum well III‐V semiconductor heterostructures (1988) (454)
- Impact ionisation in multilayered heterojunction structures (1980) (225)
- Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion (1986) (185)
- Laser operation of a heterojunction bipolar light-emitting transistor (2004) (156)
- Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition (1978) (156)
- Carbon diffusion in undoped, n‐type, and p‐type GaAs (1989) (153)
- Disorder of an AlAs‐GaAs superlattice by silicon implantation (1982) (152)
- IR‐red GaAs‐AlAs superlattice laser monolithically integrated in a yellow‐gap cavity (1981) (148)
- Room temperature continuous wave operation of a heterojunction bipolar transistor laser (2005) (136)
- Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1−x As‐GaAs quantum‐well heterostructures (1987) (135)
- Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors (2004) (112)
- Effect of Te and S Donor Levels on the Properties of GaAs 1-x P x near the Direct-Indirect Transition (1968) (110)
- Native oxide top‐ and bottom‐confined narrow stripe p‐n AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure laser (1993) (108)
- Carrier collection in a semiconductor quantum well (1978) (107)
- Charge control analysis of transistor laser operation (2007) (105)
- Disorder of an AlxGa1−xAs‐GaAs superlattice by donor diffusion (1984) (104)
- Temperature dependence of threshold current for quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes (1980) (101)
- Quantum-well-base heterojunction bipolar light-emitting transistor (2004) (100)
- Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP (1976) (99)
- Native‐oxide stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers (1991) (94)
- Observations of near-zero linewidth enhancement factor in a quantum-well coupled quantum-dot laser (2003) (87)
- Window‐Heat Sink Sandwich for Optical Experiments: Diamond (or Sapphire)‐Semiconductor‐Indium Sandwich (1971) (86)
- AlxGa1−xAs–GaAs metal–oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs (1995) (86)
- Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion (1983) (84)
- The transistor laser (2006) (78)
- Efficient quantum well to quantum dot tunneling: Analytical solutions (2002) (77)
- LPE In1−xGaxP1−zAsz (x∼0.12, z∼0.26) DH laser with multiple thin‐layer (<500 Å) active region (1977) (77)
- Resonance-free frequency response of a semiconductor laser (2009) (77)
- High‐energy (Visible‐red) stimulated emission in GaAs (1981) (76)
- Implantation disordering of AlxGa1−xAs superlattices (1985) (75)
- Man‐made quantum wells: A new perspective on the finite square‐well problem (1984) (74)
- Room‐temperature continuous operation of p‐n AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si (1987) (73)
- Continuous 300-K laser operation of strained superlattices (1983) (73)
- Direct Observation of Phonons During Tunneling in Narrow Junction Diodes (1959) (73)
- Temperature dependence of threshold current for a quantum-well heterostructure laser (1980) (72)
- Low threshold planar buried heterostructure lasers fabricated by impurity‐induced disordering (1985) (72)
- Carrier lifetime and modulation bandwidth of a quantum well AlGaAs∕InGaP∕GaAs∕InGaAs transistor laser (2006) (71)
- Native oxide stabilization of AlAs‐GaAs heterostructures (1991) (68)
- Background doping dependence of silicon diffusion in p‐type GaAs (1987) (68)
- Planar native‐oxide index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers (1991) (67)
- Is the light emitting diode (LED) an ultimate lamp (2000) (67)
- Double Injection Diodes and Related DI Phenomena in Semiconductors (1962) (65)
- Low‐threshold disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers (1985) (65)
- Stimulated emission in strained‐layer quantum‐well heterostructures (1983) (64)
- Phonon‐sideband MO‐CVD quantum‐well AlxGa1−xAs‐GaAs heterostructure laser (1979) (64)
- Alloy clustering in AlxGa1-xAs-GaAs quantum-well heterostructures (1980) (63)
- Disordering of the ordered structure in MOCVD-grown GaInP and AlGaInP by impurity diffusion and thermal annealing (1988) (62)
- Impurity diffusion and layer interdiffusion in AlxGa1−xAs‐GaAs heterostructures (1988) (60)
- Phonon‐assisted recombination and stimulated emission in quantum‐well AlxGa1−xAs‐GaAs heterostructures (1980) (59)
- The dynamics of electron‐hole collection in quantum well heterostructures (1982) (59)
- Room-temperature continuous photopumped laser operation of coupled InP quantum dot and InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructures (2001) (56)
- Room‐temperature continuous operation of photopumped MO‐CVD AlxGa1−xAs‐GaAs‐AlxGa1−xAs quantum‐well lasers (1978) (56)
- OSCILLATIONS IN SEMICONDUCTORS DUE TO DEEP LEVELS (1963) (55)
- Stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers defined by Si diffusion and disordering (1985) (54)
- Continuous 300 °K laser operation of single‐quantum‐well AlxGa1−xAs‐GaAs heterostructure diodes grown by metalorganic chemical vapor deposition (1979) (54)
- Impurity induced disordering of strained GaP‐GaAs1−xPx(x∼0.6) superlattices (1983) (53)
- Sensitivity of Si diffusion in GaAs to column IV and VI donor species (1988) (51)
- Stability of 300 K continuous operation of p‐n AlxGa1−xAs‐GaAs quantum well lasers grown on Si (1987) (51)
- Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure laser (2001) (51)
- Low‐threshold continuous laser operation (300–337 °K) of multilayer MO‐CVD AlxGa1−xAs‐GaAs quantum‐well heterostructures (1978) (51)
- Transient capacitance spectroscopy on large quantum well heterostructures (1983) (51)
- 4.3 GHz optical bandwidth light emitting transistor (2009) (51)
- Microwave circuit model of the three-port transistor laser (2010) (50)
- Pulsed room‐temperature operation of In1−xGaxP1−zAsz double heterojunction lasers at high energy (6470 Å, 1.916 eV) (1976) (50)
- Stability of AlAs in AlxGa1-xAs-AlAs-GaAs quantum well heterostructures (1990) (49)
- High-gain coupled InGaAs quantum well InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure diode laser operation (2002) (49)
- Tunnel contact junction native-oxide aperture and mirror vertical-cavity surface-emitting lasers and resonant-cavity light-emitting diodes (1999) (48)
- Environmental degradation of AlxGa1−xAs‐GaAs quantum‐well heterostructures (1990) (48)
- Tilted-charge high speed (7 GHz) light emitting diode (2009) (48)
- Spontaneous and Stimulated Carrier Lifetime (77°K) in a High‐Purity, Surface‐Free GaAs Epitaxial Layer (1970) (48)
- Crystal synthesis, electrical properties, and spontaneous and stimulated photoluminescence of In1−xGaxP:N grown from solution (1973) (46)
- Coupled InP quantum-dot InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructure diode laser operation (2001) (46)
- Confined‐carrier luminescence of a thin In1−xGaxP1−zAsz well (x∼0.13, z∼0.29, ∼400 Å) in an InP p‐n junction (1977) (46)
- Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers (1992) (45)
- Threshold Requirements and Carrier Interaction Effects in GaAs Platelet Lasers (77°K) (1970) (45)
- Laser Transition and Wavelength Limits of GaAs (1969) (44)
- Oxidation of Al-bearing III-V materials: A review of key progress (2013) (44)
- Free-exciton transitions in the optical absorption spectra of GaAs 1-x P x (1976) (44)
- Tunnel junction transistor laser (2009) (44)
- Impurity-disordered, coupled-stripe Al(x)Ga(1-x)As-GaAs quantum well laser (1985) (43)
- 850 nm Oxide-VCSEL With Low Relative Intensity Noise and 40 Gb/s Error Free Data Transmission (2014) (43)
- Column III and V ordering in InGaAsP and GaAsP grown on GaAs by metalorganic chemical vapor deposition (1988) (43)
- Energy Levels and Negative Photoconductivity in Cobalt-Doped Silicon (1966) (43)
- Long wavelength (λ∼1.5 μm) native‐oxide‐defined InAlAs‐InP‐InGaAsP quantum well heterostructure laser diodes (1994) (43)
- Lateral electron current operation of vertical cavity surface emitting lasers with buried tunnel contact hole sources (1997) (43)
- Double Injection with Negative Resistance in Semi-Insulators (1962) (42)
- Liquid phase epitaxial growth and photoluminescence characterization of laser-quality (100) In1−xGaxP (1974) (42)
- Low‐threshold disorder‐defined buried heterostructure strained‐layer AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well lasers (λ∼910 nm) (1989) (41)
- Spontaneous and stimulated photoluminescence on nitrogen A‐line and NN‐pair line transitions in GaAs1−x Px : N (1972) (41)
- Evidence for Radiative Recombination inGaAs1−x Px:N(0.28≲x≲0.45) Involving an Isolated Nitrogen Impurity State Associated with theΓ1Minimum (1976) (41)
- Induced disorder of AlAs-AlGaAs-GaAs quantum-well heterostructures (1982) (41)
- Low-threshold single quantum well (60 Å) GaAlAs lasers grown by MO-CVD with Mg as p-type dopant (1982) (41)
- Impurity‐induced disorder‐delineated optical waveguides in GaAs‐AlGaAs superlattices (1987) (41)
- Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disordering (1986) (40)
- IIA-4 Low threshold LPE In1-x',Gax',P1-z',Asz',/In1-xGaxP1-zAsz/In1-x',Gax,P1-z',Asz', yellow double heterojunction laser diodes (J < 104A/cm2, λ ≈ 5850 Å, 77°K) (1975) (40)
- Layer interdiffusion in Se‐doped AlxGa1−xAs‐GaAs superlattices (1987) (40)
- The Transistor Laser: Theory and Experiment (2013) (40)
- Depth-dependent native-defect-induced layer disordering in AlxGa1−xAs-GaAs quantum well heterostructures (1989) (39)
- Two‐Terminal Asymmetrical and Symmetrical Silicon Negative Resistance Switches (1959) (39)
- Stripe-geometry AlGaAs-GaAs quantum-well heterostructure lasers defined by impurity-induced layer disordering (1984) (39)
- Microwave operation and modulation of a transistor laser (2005) (38)
- Optically Pumped Thin‐Platelet Semiconductor Lasers (1968) (38)
- Temperature dependence of threshold current for coupled multiple quantum‐well In1−xGax P1−zAsz‐InP heterostructure laser diodes (1980) (38)
- Optical Properties of Gallium Arsenide-Phosphide (1967) (37)
- AlxGa1−xAs1−y′P y′–GaAs1−yPy HETEROSTRUCTURE LASER AND LAMP JUNCTIONS (1970) (37)
- Multiterminal P-N-P-N Switches (1958) (37)
- Space charge and oscillation effects in gold-doped silicon p-‘i’-n diodes☆ (1967) (36)
- Effects of low‐temperature annealing on the native oxide of AlxGa1−xAs (1993) (36)
- VOLUME EXCITATION OF AN ULTRATHIN SINGLE‐MODE CdSe LASER (1966) (36)
- Bevel cross sectioning of ultra-thin (∼ 100 Å) III–V semiconductor layers (1979) (36)
- Carbon‐doped AlxGa1−xAs‐GaAs quantum well lasers (1988) (36)
- Double Heterojunction AlGaAsP Quaternary Lasers (1971) (36)
- Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation (2011) (35)
- Absorption measurements at high pressure on AlAs‐AlxGa1−xAs‐GaAs superlattices (1982) (35)
- Stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers via hydrogenation (1987) (35)
- Effect of annealing temperature on the hole concentration and lattice relaxation of carbon‐doped GaAs and AlxGa1−xAs (1992) (35)
- Quantum-well Inp-Inl−xGaxPl−zAsz heterostructure lasers grown by liquid phase epitaxy (LPE) (1980) (35)
- Tunnel Mechanisms and Junction Characterization in III-V Tunnel Diodes (1972) (35)
- Band structure enhancement and optimization of radiative recombination in GaAs1−x Px:N (and In1−x Gax P:N) (1974) (35)
- Limitations of the direct‐indirect transition on In1−xGaxP1−zAsz heterojunctions (1977) (35)
- Liquid phase epitaxial In1-x Gax P1-z Asz/GaAs1-y Py quaternary (LPE)-ternary (VPE) heterojunction lasers (x ∼0.70, z ∼0.01, y ∼0.40; λ < 6300 Å, 77°K) (1974) (34)
- Photopumped room‐temperature edge‐ and vertical‐cavity operation of AlGaAs‐GaAs‐InGaAs quantum‐well heterostructure lasers utilizing native oxide mirrors (1994) (34)
- Continuous room‐temperature multiple‐quantum‐well AlxGa1−xAs‐GaAs injection lasers grown by metalorganic chemical vapor deposition (1979) (34)
- Photoluminescence Associated with Multivalley Resonant Impurity States above the Fundamental Band Edge: N Isoelectronic Traps in GaAs 1-x P x (1971) (34)
- SPECTRAL BEHAVIOR, CARRIER LIFETIME, AND PULSED AND cw LASER OPERATION (77 °K) OF In1−xGaxP (1971) (34)
- The effect of microcavity laser recombination lifetime on microwave bandwidth and eye-diagram signal integrity (2011) (33)
- Bandfilling in metalorganic chemical vapor deposited AlxGa1−xAs‐GaAs‐AlxGa1−xAs quantum‐well heterostructure lasers (1978) (33)
- In1−xGaxP p‐n Junction Lasers (1971) (33)
- Electrical-optical signal mixing and multiplication (2-->22 GHz) with a tunnel junction transistor laser (2009) (33)
- Transistor laser with emission wavelength at 1544nm (2008) (33)
- Highly efficient, long lived AlGaAs lasers fabricated by silicon impurity induced disordering (1986) (33)
- Crystal and luminescence properties of constant‐temperature liquid‐phase‐expitaxial In1−xGaxP (x [inverted lazy s]0.7) grown on (100) GaAs1−xPx(x [inverted lazy s]0.4) (1973) (33)
- Photoluminescence Associated with Multivalley Resonant States of the N Isoelectronic Trap in In 1-x Ga x P (1972) (32)
- Phonon-assisted recombination and stimulated emission in multiple quantum-well Mo-CVD AlxGa1-xAs-GaAs heterostructures (Lz∽50Å, E1-1' -2× h̵ωLO⪅h̵ω (1979) (32)
- Gallium-Arsenide Tunnel Diodes (1960) (32)
- Stimulated Emission Involving the Nitrogen Isoelectronic Trap in GaAs1−xPx (1971) (31)
- Oxide-Confined VCSELs for High-Speed Optical Interconnects (2018) (31)
- High energy AlxGa1−xAs (0⩽x⩽0.1) quantum‐well heterostructure laser operation (1982) (31)
- Impurity‐induced layer disordering of high gap Iny(AlxGa1−x)1−yP heterostructures (1988) (31)
- Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser (2006) (31)
- Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping (2007) (31)
- GENERAL PHYSICS: Nuclear, Atomic, and Molecular (PACS 01-361 2315 Depolarization effects in the active remote sensing of random media (1980) (30)
- DIRECT OBSERVATION OF A DYNAMIC BURSTEIN SHIFT IN A GaAs:Ge PLATELET LASER (1970) (30)
- Single and multiple thin‐layer (Lz≲400 A) In1−xGaxP1−zAsz‐InP heterostructure light emitters and lasers (λ∼1.1 μm, 77 °K) (1978) (30)
- Photopumped laser operation of MO‐CVD AlxGa1−xAs near a GaAs quantum well (λ≳6200 Å, 77 °K) (1978) (30)
- Electrical Oscillations in Silicon Compensated with Deep Levels (1966) (29)
- STIMULATED EMISSION IN In1 ‐xGaxP (1970) (29)
- The exciton in recombination in AlxGa1−xAs-GaAs quantum-well heterostructures (1980) (29)
- Effect of composition and pressure on the nitrogen isoelectronic trap in GaAs 1-x P x (1976) (29)
- Optical Phase-Shift Measurement of Carrier Decay Times (77°K) on Lightly Doped Double-Surface and Surface-Free Epitaxial GaAs (1971) (29)
- Buried tunnel contact junction AlGaAs-GaAs-InGaAs quantum well heterostructure lasers with oxide-defined lateral currents (1997) (29)
- THE LASER TRANSITION AND PHOTON ENERGY OF GaAs IN THE LIGHTLY‐DOPED LIMIT (1968) (28)
- Phonon- and Auger-assisted tunneling from a quantum well to a quantum dot (2004) (28)
- Identification of recombination luminescence transitions in N-doped GaAs1−xPx (x = 0.87) (1976) (28)
- Energy efficient microcavity lasers with 20 and 40 Gb/s data transmission (2011) (28)
- VAPOR‐LIQUID‐SOLID GROWTH OF GALLIUM PHOSPHIDE (1965) (28)
- Thermal‐anneal wavelength modification of multiple‐well p‐n AlxGa1−x As‐GaAs quantum‐well lasers (1984) (28)
- Gallium arsenide-phosphide: Crystal, diffusion and laser properties (1966) (28)
- Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In0.46Ga0.54P quantum wells (2004) (28)
- Graded-base InGaN∕GaN heterojunction bipolar light-emitting transistors (2006) (27)
- Multiple liquid phase epitaxy of In1−xGaxP1−zAsz double‐heterojunction lasers: The problem of lattice matching (1977) (27)
- 850 nm oxide-confined VCSELs with 50 Gb/s error-free transmission operating up to 85 °C (2016) (27)
- Stimulated Emission in an Indirect Semiconductor: N Isoelectronic Trap-Assisted Recombination in GaA (1971) (27)
- Dislocation reduction by impurity diffusion in epitaxial GaAs grown on Si (1988) (27)
- Dependence on doping type (p/n) of the water vapor oxidation of high‐gap AlxGa1−xAs (1992) (26)
- Short‐wavelength (≲6400 Å) room‐temperature continuous operation of p‐n In0.5(AlxGa1−x)0.5P quantum well lasers (1988) (26)
- Transverse modes of gain‐guided coupled‐stripe lasers: External cavity control of the emitter spacing (1985) (26)
- Photoluminescence and stimulated emission in Si‐ and Ge‐disordered AlxGa1−xAs‐GaAs superlattices (1985) (26)
- Thin-layer liquid phase epitaxy of InGaPAs heterostructures in short intervals (< 100 ms): Non-diffusion-limited crystal growth (1981) (26)
- Growth and Dislocation Structure of Single‐Crystal Ga (As1−xPx) (1965) (26)
- Scaling of light emitting transistor for multigigahertz optical bandwidth (2009) (26)
- Franz–Keldysh Photon-Assisted Voltage-Operated Switching of a Transistor Laser (2007) (26)
- High‐performance planar native‐oxide buried‐mesa index‐guided AlGaAs‐GaAs quantum well heterostructure lasers (1992) (26)
- EFFECT OF DONOR IMPURITIES ON THE DIRECT‐INDIRECT TRANSITION IN Ga(As1 ‐ xPx) (1966) (26)
- Al–Ga interdiffusion, carbon acceptor diffusion, and hole reduction in carbon‐doped Al0.4Ga0.6As/GaAs superlattices: The As4 pressure effect (1993) (25)
- Growth and characterization of AlGaAs/GaAs quantum well lasers (1984) (25)
- Si‐implanted and disordered stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers (1985) (25)
- Luminescence, laser, and carrier‐lifetime behavior of constant‐temperature LPE In1−x Gax P (x=0.52) grown on (100) GaAs (1974) (25)
- Properties of n type Ge-doped epitaxial GaAs layers grown from Au-rich melts☆ (1972) (25)
- High‐barrier cluster‐free AlxGa1−xAs‐AlAs‐GaAs quantum‐well heterostructure laser (1981) (25)
- Impurity induced layer disordering of Si implanted AlxGa1−xAs‐GaAs quantum‐well heterostructures: Layer disordering via diffusion from extrinsic dislocation loops (1987) (25)
- Tunnel injection and phonon‐assisted recombination in multiple quantum‐well AlxGa1−xAs‐GaAs p‐n heterostructure lasers grown by metalorganic chemical vapor deposition (1979) (24)
- Effect of layer size on lattice distortion in strained‐layer superlattices (1984) (24)
- Optical phase shift measurement (77°K) of carrier decay time in direct GaAsP (1971) (24)
- Determination of the valence‐band discontinuity of InP1−xGaxP1−zAsz (x∼0.13, z∼0.29) by quantum‐well luminescence (1979) (24)
- Thermal behavior and stability of room‐temperature continuous AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si (1988) (24)
- Native oxide‐embedded AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure lasers (1993) (24)
- Signal mixing in a multiple input transistor laser near threshold (2006) (23)
- Liquid phase epitaxial (LPE) grown junction In1-xGaxP (x∼0.63) laser of wavelength λ∼5900 Å (2.10 eV, 77°K) (1974) (23)
- High-power gain-guided coupled-stripe quantum well laser array by hydrogenation (1988) (23)
- Relative intensity noise of a quantum well transistor laser (2012) (23)
- Induced phonon‐sideband laser operation of large‐quantum‐well AlxGa1−xAs‐GaAs heterostructures (Lz ∼200–500 Å) (1980) (23)
- Donor‐induced disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum‐well lasers (1985) (23)
- Thermal annealing and photoluminescence measurements on AlxGa1−xAs‐GaAs quantum‐well heterostructures with Se and Mg sheet doping (1987) (22)
- Effects of microcracking on AlxGa1−xAs‐GaAs quantum well lasers grown on Si (1988) (22)
- Liquid phase epitaxial In1-xGaxP1-zAsz/GaAs1-yPyheterojunction lasers (1975) (21)
- Photopumped red-emitting InP/In0.5Al0.3Ga0.2P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition (2001) (21)
- Growth mechanism of InAs quantum dots on GaAs by metal-organic chemical-vapor deposition (2005) (21)
- Coupled stripe AlxGa1−xAs‐GaAs quantum well lasers defined by impurity‐induced (Si) layer disordering (1987) (21)
- SPONTANEOUS AND STIMULATED CARRIER LIFETIME AND THE SPECTRAL OUTPUT OF CdSe (77°K) (1970) (21)
- Low‐threshold disorder‐defined native‐oxide delineated buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers (1991) (21)
- Determination of the indirect band edge of GaAs by quantum-well bandfilling (Lz∼100Å) (1978) (21)
- MANY‐BODY WAVELENGTH SHIFT IN A SEMICONDUCTOR LASER (1968) (21)
- GaAs junction lasers containing the amphoteric dopants Ge and Si (1970) (21)
- Direct observation of lattice distortion in a strained‐layer superlattice (1983) (21)
- 50 Gb/s error-free data transmission of 850 nm oxide-confined VCSELs (2016) (21)
- Hot electrons in layered semiconductors (1980) (20)
- Photoluminescence measurements of band discontinuity in InP‐InGaPAs heterostructures (1985) (20)
- Continuous (300 K) photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures grown on strained‐layer GaAs on Si (1987) (20)
- Optical phase shift measurement of residual defects in vapor epitaxial GaAsP (1971) (20)
- Index of refraction of AlAs‐GaAs superlattices (1983) (20)
- Single thin‐active‐layer visible‐spectrum In1−xGaxP1−zAsz heterostructure lasers (1978) (20)
- Currents Induced by Moving Charges (1966) (20)
- Pumping of GaAs1−x Px : N (at 77 °K, for x≲0.53) by an electron beam from a gas plasma (1973) (20)
- From Transistors to Lasers and Light-Emitting Diodes (2005) (20)
- Disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers by diffusion of silicon and oxygen from Al‐reduced SiO2 (1989) (20)
- CURRENT OSCILLATIONS IN Co‐DOPED Si p‐i‐n STRUCTURES (1967) (20)
- Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling (2012) (20)
- THE ``DIRECT‐INDIRECT'' TRANSITION IN Ga(As1−xPx) p‐n JUNCTIONS (1963) (19)
- Transistor laser optical and electrical linearity enhancement with collector current feedback (2012) (19)
- Surface Emission Vertical Cavity Transistor Laser (2012) (19)
- cw room‐temperature operation of GaAlAs single quantum well visible (7300 Å) diode lasers at 100 mW (1983) (19)
- Photopumped low threshold Alx″Ga1−x″As ‐Alx′Ga1−x′As‐AlxGa1−xAs (x″∼0.85, x′∼0.3, x=0) single quantum well lasers (1983) (19)
- Native‐oxide stripe‐geometry In0.5(AlxGa1−x)0.5P‐In0.5Ga0.5P heterostructure laser diodes (1991) (19)
- Hydrogenation and subsequent hydrogen annealing of GaAs on Si (1989) (19)
- Column III vacancy‐ and impurity‐induced layer disordering of AlxGa1−xAs‐GaAs heterostructures with SiO2 or Si3N4 diffusion sources (1990) (19)
- Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature (2013) (19)
- Far‐field supermode patterns of a multiple‐stripe quantum well heterostructure laser operated (∼7330 Å, 300 K) in an external grating cavity (1984) (19)
- Coupled-stripe quantum-well-assisted AlGaAs–GaAs–InGaAs–InAs quantum-dot laser (2002) (19)
- Absorption and stimulated emission in an AlAs-GaAs superlattice (1981) (19)
- Laser Transitions in p‐Type GaAs:Si (1969) (19)
- InP/InAlGaAs light-emitting transistors and transistor lasers with a carbon-doped base layer (2011) (19)
- Native‐oxide defined In0.5(AlxGa1−x)0.5P quantum well heterostructure window lasers (660 nm) (1992) (19)
- Hot electrons and phonons in quantum-well AlxGa1-xAs-GaAs heterostructures (1980) (19)
- Opto-electronic device structures fabricated by impurity induced disordering (1986) (18)
- The semiconductor laser: a thirty-five-year perspective (1997) (18)
- Impurity‐induced layer disordering in In0.5(Alx Ga1−x)0.5P‐InGaP quantum‐well heterostructures: Visible‐spectrum‐buried heterostructure lasers (1989) (18)
- Continuous room‐temperature photopumped laser operation of modulation‐doped AlxGa1−xAs/GaAs superlattices (1981) (18)
- Native‐oxide‐defined coupled‐stripe AlxGa1−xAs‐GaAs quantum well heterostructure lasers (1991) (18)
- Vertical cavity surface emitting lasers utilizing native oxide mirrors and buried tunnel contact junctions (1998) (18)
- Al‐Ga interdiffusion in heavily carbon‐doped AlxGa1−xAs‐GaAs quantum well heterostructures (1990) (18)
- Photon-assisted breakdown, negative resistance, and switching in a quantum-well transistor laser (2007) (18)
- Native‐oxide masked impurity‐induced layer disordering of AlxGa1−xAs quantum well heterostructures (1991) (18)
- Laser operation of CdSe pumped with a Ga(AsP) laser diode (1966) (18)
- Hydrogenation of Si- and Be-doped InGaP (1990) (18)
- Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor (2004) (18)
- Planar native‐oxide AlxGa1−xAs‐GaAs quantum well heterostructure ring laser diodes (1992) (18)
- Tunnel injection into the confined‐particle states of an In1−xGaxP1−zAsz well in InP (1977) (18)
- Buried‐oxide ridge‐waveguide InAlAs‐InP‐InGaAsP (λ∼1.3 μm) quantum well heterostructure laser diodes (1994) (18)
- Broadband tuning (ΔE∼100 meV) of Alx Ga1−xAs quantum well heterostructure lasers with an external grating (1983) (17)
- Absorption, stimulated emission, and clustering in AlAs‐AlxGa1−xAs‐GaAs superlattices (1981) (17)
- Phonon‐assisted recombination in a multiple‐quantum‐well LPE InP‐In1−xGaxP1−zAsz heterostructure laser (1979) (17)
- Microwave extraction method of radiative recombination and photon lifetimes up to 85 °C on 50 Gb/s oxide-vertical cavity surface emitting laser (2016) (17)
- Stimulated emission in a degenerately doped GaAs quantum well (1982) (17)
- Stimulated Emission and Laser Operation (cw, 77°K) Associated with Deep Isoelectronic Traps in Indirect Semiconductors (1972) (17)
- Low‐temperature operation of multiple quantum‐well AlxGa1−xAs‐GaAs p‐n heterostructure lasers grown by metalorganic chemical vapor deposition (1979) (17)
- High pressure measurements on AlxGa1−xAs‐GaAs (x = 0.5 and 1) superlattices and quantum well heterostructure lasers (1982) (17)
- Homogeneous or inhomogeneous line broadening in a semiconductor laser: Observations on In1−xGaxP1−zAsz double heterojunctions in an external grating cavity (1976) (17)
- High-power disorder-defined coupled stripe AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure lasers (1989) (17)
- Low threshold photopumped AlxGa1−xAs quantum‐well heterostructure lasers (1983) (17)
- Supermodes of multiple‐stripe quantum‐well heterostructure laser diodes operated (cw, 300 K) in an external‐grating cavity (1985) (17)
- Optically Pumped In1−xGax P Platelet Lasers from the Infrared to the Yellow (8900−5800 Å, 77°K) (1972) (17)
- Yellow In1−xGaxP1−zAsz double‐heterojunction lasers (1976) (17)
- Inhomogeneity of liquid‐phase‐epitaxial InGaAsP lattice matched on InP: Effects of transient growth (1984) (17)
- VOLUME EXCITATION OF AN ULTRATHIN CONTINUOUS‐WAVE CdSe LASER AT 6900 Å OUTPUT (1967) (17)
- Broadband long-wavelength operation (9700 Å≳λ≳8700 Å) of AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure lasers in an external grating cavity (1989) (16)
- Melt removal and planar growth of In1−xGaxP1−zAsz heterojunctions (1976) (16)
- Deep‐oxide curved resonator for low‐threshold AlGaAs–GaAs quantum well heterostructure ring lasers (1995) (16)
- Optical bandwidth enhancement by operation and modulation of the first excited state of a transistor laser (2007) (16)
- Modulation of high current gain (β>49) light-emitting InGaN∕GaN heterojunction bipolar transistors (2007) (16)
- Tunneling modulation of a quantum-well transistor laser (2016) (16)
- Photosensitive Impurity-Assisted Tunneling (Au, 77°K) IN GaAs Tunnel Diodes (1970) (16)
- Laser Recombination Transition in p-TYPE GaAs (1969) (16)
- SPACE‐CHARGE RECOMBINATION OSCILLATIONS IN SILICON (1967) (16)
- Defect‐ and phonon‐assisted tunneling in LPE In1−xGaxP1−zAsz DH laser diodes (λ∼1 μm) (1977) (15)
- Resonant enhancement of the recombination probability associated with isoelectronic trap states in semiconductor alloys: In1−xGaxP:N laser operation (77 °K) in the yellow‐green (λ≲5560 Å, ℏ ω≳2.23 eV) (1972) (15)
- Postfabrication native‐oxide improvement of the reliability of visible‐spectrum AlGaAs–In(AlGa)P p‐n heterostructure diodes (1995) (15)
- Clustering in molecular‐beam epitaxial AlxGa1−xAs‐GaAs quantum‐well heterostructure lasers (1981) (15)
- Intra-cavity photon-assisted tunneling collector-base voltage-mediated electron-hole spontaneous-stimulated recombination transistor laser (2016) (15)
- Device-quality epitaxial AlAs by metalorganic-chemical vapor deposition (1981) (15)
- Room temperature photopumped laser operation of native‐oxide‐defined coupled GaAs–AlAs superlattice microrings (1996) (15)
- Zn‐diffused laser junctions in InxGa1−xAs and InAsxP1−x grown from In solution at constant temperature (1972) (15)
- Short‐wavelength (∼625 nm) room‐temperature continuous laser operation of In0.5(AlxGa1−x)0.5P quantum well heterostructures (1988) (14)
- HIGH-REFLECTIVITY VISIBLE-WAVELENGTH SEMICONDUCTOR NATIVE OXIDE BRAGG REFLECTORS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION (1995) (14)
- High current density carbon-doped strained-layer GaAs (p+)-InGaAs(n+)-GaAs(n+) p-n tunnel diodes (1993) (14)
- Stimulated emission in In0.5(AlxGa1−x)0.5P quantum well heterostructures (1988) (14)
- Dislocation‐accelerated impurity‐induced layer disordering of AlxGa1−xAs‐GaAs quantum well heterostructures grown on GaAs‐on‐Si (1989) (14)
- Alloy clustering and its effect on impact ionization in ternary III–V compounds (1982) (14)
- Collector characteristics and the differential optical gain of a quantum-well transistor laser (2007) (14)
- Wavelength modification (Δℏω=10–40 meV) of room temperature continuous quantum‐well heterostructure laser diodes by thermal annealing (1983) (14)
- Properties of InP self-assembled quantum dots embedded in In0.49(AlxGa1−x)0.51P for visible light emitting laser applications grown by metalorganic chemical vapor deposition (2002) (14)
- Visible spectrum (654 nm) room temperature continuous wave InP quantum dot coupled to InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructure laser (2002) (14)
- Index Dispersion above the Fundamental Band Edge in Nitrogen-Doped GaAs 1-y P y (y=0.38, E N Γ ) (1974) (14)
- Quenching of stimulated phonon emission in AlxGa1−xAs-GaAs quantum-well heterostructures (1981) (14)
- Native‐oxide‐defined low‐loss AlGaAs‐GaAs planar waveguide bends (1993) (14)
- Near-infrared In1-xGaxP1-zAszdouble-heterojunction lasers: Constant-temperature LPE growth and operation in an external-grating cavity (1977) (14)
- Quantum well AlxGa1−xAs‐GaAs lasers with internal (Si2)x(GaAs)1−x barriers (1986) (13)
- InAlGaAs∕InP light-emitting transistors operating near 1.55μm (2008) (13)
- Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−y source (1987) (13)
- Photoexcited resonance-enhanced nitrogen-trap GaAs 1-x P x :N laser (1973) (13)
- Heterojunction laser operation of N‐free and N‐doped GaAs1−yPy (y=0.42–0.43, λ∼6200 Å, 77 °K) near the direct‐indirect transition (y∼yc?0.46) (1975) (13)
- VB-6 continuous room-temperature laser operation of AlxGa1-xAs-GaAs quantum well heterostructures grown on Si (1987) (13)
- Physics of base charge dynamics in the three port transistor laser (2010) (13)
- Evidence for States (Bands) in the Forbidden Gap of Degenerate GaAs and InP—Secondary Tunnel Currents and Negative Resistances (1961) (13)
- Collector breakdown in the heterojunction bipolar transistor laser (2006) (13)
- Photopumped room‐temperature continuous operation of native‐oxide‐embedded AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well‐heterostructure lasers (1993) (13)
- Selective oxidization cavity confinement for low threshold vertical cavity transistor laser (2013) (13)
- Effect of crystal composition on ``quasidirect'' recombination and LED performance in the indirect region of GaAs1−xPx:N (1974) (13)
- Effect of Si delta doping on the luminescence properties of InP/InAlP quantum dots (2003) (13)
- The direct-indirect transition in In1−xGaxP (1974) (13)
- Zn diffusion and disordering of an AlAs-GaAs superlattice along its layers (1982) (13)
- Advances in light‐emitting diodes (1973) (13)
- Bandfilling and photon-assisted tunneling in a quantum-well transistor laser (2011) (13)
- Nitrogen trap bound states in In1−xGaxP☆ (1976) (13)
- Optical phase shift measurement of carrier decay-time on thin semiconductor samples with surface losses (1971) (13)
- Photopumped laser operation of an oxide post GaAs-AlAs superlattice photonic lattice (1997) (12)
- Interface abruptness and dissolution-induced “damage” in LPE InGaAsP heterostructures (1985) (12)
- Effect of the energy barrier in the base of the transistor laser on the recombination lifetime (2014) (12)
- Quantum-well Al x Ga 1 - x As-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition (1979) (12)
- An Experimental Investigation of the Maximum Photo‐emf of a p‐n Junction (1967) (12)
- Phonon contribution to metalorganic chemical vapor deposited Alx Ga1−xAs‐GaAs quantum‐well heterostructure laser operation (1981) (12)
- Effect of the Direct‐Indirect Transition on the Hall Effect in Ga(As1−xPx) (1966) (12)
- Photopumped laser operation of GaAs doping superlattices (1986) (12)
- High‐energy (λ≲7300 Å) 300 K operation of single‐ and multiple‐stripe quantum‐well heterostructure laser diodes in an external grating cavity (1984) (12)
- Metalorganic chemical vapor deposition growth and characterization of InGaP/GaAs superlattices (2006) (12)
- Monolayer heterointerfaces and thin layers (~10 å) in alxga1-xas-gaas superlattices grown by metalorganic chemical vapour deposition (1984) (12)
- Current oscillations in Zn-doped Si p-i-n diodes☆ (1970) (12)
- Current oscillations in deep-level doped semiconductors (1969) (12)
- Resonant enhancement (?) of the recombination probability at the nitrogen-trap, Γ-band edge crossover in GaAs1-xPx: N(EN = EΓ, x ≡ xN) (1975) (12)
- The effect of mode spacing on the speed of quantum-well microcavity lasers (2010) (12)
- Direct Study of the Nature of Nitrogen Bound States in GaAs 1-x P x :N (1976) (12)
- AlxGa1−xAs native-oxide-based distributed Bragg reflectors for vertical cavity surface emitting lasers (1998) (11)
- Chirp in a transistor laser: Franz-Keldysh reduction of the linewidth enhancement (2007) (11)
- In1−x Gax P:N Laser Operation (cw, 77°K) on the Nitrogen A‐Line Transition in Indirect Crystals (x ≥ 0.74) and in Direct Crystals above the Fundamental Band Edge (x ≥ 0.71) (1972) (11)
- High performance AlyGa1−yAs-GaAs-lrxGa1−xAs quantum well lasers defined by silicon-oxygen impurity-induced layer disordering (1990) (11)
- Lattice matching and dislocations in LPE in1−xGaxP1−zAsz—InP heterojunctions (1977) (11)
- n‐p‐(p+‐n+)‐n AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well laser with p+‐n+ GaAs‐InGaAs tunnel contact on n‐GaAs (1993) (11)
- Visible‐spectrum multiple‐quantum‐well In1−x′Gax′P1−z′Asz′‐ In1−xGaxP1−zAsz (x≳x′, z≳z′) heterostructure lasers (1980) (11)
- Size fluctuations and high‐energy laser operation of AlxGa1−xAs‐AlAs‐GaAs quantum‐well heterostructures (1981) (11)
- Phonon contribution to double‐heterojunction laser operation (1980) (11)
- Impurity‐induced layer‐disordered buried heterostructure AlxGa1−xAs‐GaAs quantum well edge‐injection laser array (1987) (11)
- Bandwidth extension by trade-off of electrical and optical gain in a transistor laser: Three-terminal control (2009) (11)
- Long Lifetime (Laser) States in p‐Type Si‐Doped GaAs (1970) (11)
- Low‐temperature operating life of continuous 300‐K AlxGa1−xAs‐GaAs quantum‐well heterostructure lasers grown on Si (1991) (11)
- Effect of the InAlGaP matrix on the growth of self-assembled InP quantum dots by metalorganic chemical vapor deposition (2003) (11)
- CURRENT OSCILLATIONS IN Si p‐i‐n DEVICES AFTER IRRADIATION WITH ONE‐MeV ELECTRONS (1969) (11)
- Short‐wavelength continuous 300‐K photopumped AlxGa1−xAs‐GaAs quantum well heterostructure laser (λ≳7270 Å) (1982) (10)
- Relative intensity noise in high speed microcavity laser (2013) (10)
- Coupled-stripe in-phase operation of planar native-oxide index-guided AlyGa1−yAs-GaAs-InxGa1−xAs quantum-well heterostructure laser arrays (1992) (10)
- Impurity-induced disordering of AlxGa1−xAs-GaAs quantum well heterostructures with (Si2)x(GaAs)1−x barriers (1987) (10)
- Broadband operation of coupled‐stripe multiple quantum well AlGaAs laser diodes (1985) (10)
- In1−xGaxP1−zAsz double‐heterojunction‐laser operation (77 °K, yellow) in an external grating cavity (1976) (10)
- Instability of partially disordered carbon-doped AlGaAs/GaAs superlattices (1990) (10)
- From transistors to light emitters (2000) (10)
- Stimulated emission on Nx(’’A‐line’’) recombination transitions in nitrogen‐implanted GaAs1−xPx(x≈0.37) (1976) (10)
- LASER TRANSITION TO BAND EDGE OR TO IMPURITY STATES IN GaAs:Ge (1969) (10)
- Native-oxide coupled-cavity Al(x)Ga(1-x)As-GaAs quantum well heterostructure laser diodes (1991) (10)
- High pressure experiments on AlxGa1-xAs-GaAs quantum-well heterostructure lasers (1982) (10)
- Observation of phonon‐assisted laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures (1989) (10)
- Layer intermixing in heavily carbon‐doped AlGaAs/GaAs superlattices (1990) (10)
- Model calculations for radiative recombination in Zn-N-doppedGaAs1−xPxin the direct and indirect composition region (1974) (10)
- Buried heterostructure AlxGa1−xAs‐GaAs quantum well lasers by Ge diffusion from the vapor (1988) (10)
- Compositional inhomogeneity of liquid phase epitaxial InGaPAs layers observed directly in photoluminescence (1980) (10)
- Resonant tunneling in a GaAs1−xPx-GaAs strained-layer quantum-well heterostructure (1984) (10)
- Low‐threshold disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers by open‐tube rapid thermal annealing (1990) (9)
- Photon‐induced anisotropic oxidation along p‐n junctions in AlxGa1−xAs‐GaAs quantum well heterostructures (1993) (9)
- Deep‐oxide planar buried‐channel AlGaAs–GaAs quantum well heterostructure waveguides with low bend loss (1995) (9)
- The Origins of Diffused-Silicon Technology at Bell Labs, 1954-55 (2007) (9)
- Si impurity‐induced layer disordering of Alx Ga1−x ‐GaAs quantum‐well heterostructures by As‐free open‐tube rapid thermal annealing (1990) (9)
- SHORT-WAVELENGTH ROOM-TEMPERATURE CONTINUOUS-WAVE LASER OPERATION OF INALP-INGAP SUPERLATTICES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION (1994) (9)
- Effect of surface encapsulation and As4 overpressure on Si diffusion and impurity-induced layer disordering in GaAs, AlxGa1-xAs, and AlxGa1-xAs-GaAs quantum well heterostructures (1988) (9)
- Double injection diodes and related (DI) phenomena in semiconductors (1962) (9)
- Double injection and negative resistance in stripe‐geometry oxide‐aperture AlyGa1−yAs–GaAs–InxGa1−xAs quantum well heterostructure laser diodes (1996) (9)
- Tunneling injection quantum-dot lasers with polarization-dependent photon-mediated carrier redistribution and gain narrowing (2005) (9)
- Planar single‐facet teardrop‐shaped AlxGa1−xAs‐GaAs quantum well heterostructure laser (1993) (9)
- Hydrostatic pressure measurements (≲12 kbar) on single‐ and multiple‐stripe quantum‐well heterostructure laser diodes (1985) (9)
- An overview of early studies on persistent photoconductivity and other properties of deep levels in GaAsP: The effect of deep levels on light emitting devices (1991) (9)
- Visible‐spectrum (λ=650 nm) photopumped (pulsed, 300 K) laser operation of a vertical‐cavity AlAs–AlGaAs/InAlP–InGaP quantum well heterostructure utilizing native oxide mirrors (1995) (9)
- Coupled‐stripe AlxGa1−xAs‐GaAs quantum well lasers defined by vacancy‐enhanced impurity‐induced layer disordering from (Si2)y(GaAs)1−y barriers (1987) (9)
- Impurity‐induced disordering of single well AlxGa1−xAs‐GaAs quantum well heterostructures (1984) (9)
- Long-wavelength strain-compensated GaAsSb quantum-well heterostructures laser grown by metalorganic chemical vapor deposition (2003) (9)
- EDGE-EMITTING QUANTUM WELL HETEROSTRUCTURE LASER DIODES WITH AUXILIARY NATIVE-OXIDE VERTICAL CAVITY CONFINEMENT (1995) (9)
- Transient and noise characteristics of quantum-well heterostructure lasers (1981) (9)
- Recombination transitions in Zn–N‐doped GaAs1−xPx in the direct and indirect composition regions (1974) (9)
- Pressure experiment determination of the direct-indirect transition in the quarternary In1−xGaxP1−zAsz☆ (1976) (8)
- Layer intermixing and related long-term instability in heavily carbon-doped AlGaAs/GaAs superlattices (1991) (8)
- Heterointerface quality of InGaP–GaAs superlattices determined by photopumping, x-ray analysis, and transmission electron microscopy (1999) (8)
- Optical bandwidth enhancement of heterojunction bipolar transistor laser operation with an auxiliary base signal (2008) (8)
- Location of the Source of Recombination Radiation in Ga (As1−xPx) p‐n Junctions by Electron Bombardment (1965) (8)
- Spontaneous and stimulated carrier lifetimes (77°K) in GaAs1−xPx and GaAs1−xPx : N (1974) (8)
- Temperature dependent analysis of 50 Gb/s oxide-confined VCSELs (2017) (8)
- AlxGa1−xAs‐GaAs‐InyGa1−yAs quantum well heterostructure lasers with native oxide current‐blocking windows formed on metallized devices (1994) (8)
- Zn disordering of a Ga0.5In0.5P‐(AlxGa1−x)0.5In0.5P quantum well heterostructure grown by metalorganic chemical vapor deposition (1989) (8)
- Double Injection in Semiconductors with Multivalent Trapping Centers (1970) (8)
- Tunneling injection quantum dot lasers (2005) (8)
- Lifetime spectra (77 °K) of nitrogen−doped GaAs1−xPx (1975) (8)
- The effect of ground and first excited state transitions on transistor laser relative intensity noise (2013) (8)
- High pressure measurements on visible spectrum AlxGa1−xAs heterostructure lasers: 7100–6750‐Å 300‐K operation (1982) (8)
- Damaged and damage‐free hydrogenation of GaAs: The effect of reactor geometry (1988) (8)
- Clustering and phonon effects in AlxGa1−xAsGaAs quantum-well heterostructure lasers grown by molecular beam epitaxy (1981) (8)
- Resonance-free optical response of a vertical cavity transistor laser (2017) (8)
- Gain narrowing and output behavior of InP-InGaAlP tunneling injection quantum-dot-well laser (2005) (8)
- Planar native‐oxide‐based AlGaAs‐GaAs‐InGaAs quantum well microdisk lasers (1996) (8)
- Effect of microcavity size to the RIN and 40 Gb/s data transmission performance of high speed VCSELs (2015) (8)
- Temperature dependence of a high-performance narrow-stripe (1 μm) single quantum-well transistor laser (2011) (8)
- Tunneling Modulation of Transistor Lasers: Theory and Experiment (2018) (8)
- Growth of InP quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition (2003) (7)
- Diffusion of manganese in GaAs and its effect on layer disordering in AlxGa1−xAs‐GaAs superlattices (1991) (7)
- High‐energy stimulated emission in GaAs quantum wells coupled with (Si2)x(GaAs)1−x barriers (ℏω≳EL, EX) (1986) (7)
- High pressure measurements on photopumped low threshold AlxGa1−xAs quantum well lasers (1983) (7)
- Single Quantum-Well Transistor Lasers Operating Error-Free at 22 Gb/s (2015) (7)
- Deep‐oxide planar buried‐heterostructure AlGaAs–GaAs quantum well heterostructure laser diodes (1994) (7)
- Temperature-dependent luminescence of InP quantum dots coupled with an InGaP quantum well and of InP quantum dots in a quantum well (2005) (7)
- 85°C Operation of 850 nm VCSELs Deliver a 42 Gb/s Error-Free Data Transmission for 100 meter MMF Link (2018) (7)
- Photopumped laser operation of a planar disorder‐ and native‐oxide‐defined AlAs–GaAs photonic lattice (1996) (7)
- Microwave characterization of Purcell enhancement in a microcavity laser (2010) (7)
- Optically Pumped Volume‐Excited cw Room‐Temperature In1−x Gax P (x ≤ 0.60) Platelet Lasers (1972) (7)
- Native-oxide-masked Si impurity-induced layer disordering of AlxGa1−xAs-AlyGa1−yAs-AlzGa1−zAs quantum-well heterostructures (1991) (7)
- Planar anisotropic oxidation of graded AlGaAs for high resolution vertical-wall current and light guiding in laser diodes (1997) (7)
- Visible spectrum light-emitting transistors (2006) (7)
- Visible spectrum native‐oxide coupled‐stripe In0.5(AlxGa1−x)0.5P–In0.5Ga0.5P quantum well heterostructure laser arrays (1991) (7)
- Stimulated Emission and Laser Operation (cw, 77°K) of Direct and Indirect GaAs1−xPx on Nitrogen Isoelectronic Trap Transitions (1972) (7)
- TIME BEHAVIOR OF EXCITON FORMATION AND LASER EMISSION IN Cd(SeS) PLATELETS (1969) (7)
- Defect and phonon effects in In1−χGaχP p-n tunnel junctions (1971) (7)
- Microwave determination of electron-hole recombination dynamics from spontaneous to stimulated emission in a quantum-well microcavity laser (2010) (7)
- Low Power Operation of a Vertical Cavity Transistor Laser via the Reduction of Collector Offset Voltage (2014) (7)
- Tunneling involving defects in LPE In1−xGaxP1−zAsz(x∼0.12, z∼0.26) double‐heterojunction lasers (1977) (7)
- Sparked Hydrogen Treatment of Germanium Surfaces (1955) (6)
- Continuous operation of visible-spectrum in 1-x Ga x P 1-z As z laser diodes (6280 Å, 77 K) (1978) (6)
- Enhanced hot‐carrier spontaneous and stimulated recombination in a photopumped vertical cavity AlxGa1−xAs–GaAs quantum well heterostructure with multiple top and bottom native oxide mirrors (1995) (6)
- Generation of an anomalous hole trap in GaAs by As overpressure annealing (1988) (6)
- Heterojunction laser operation of GaAs1−xPx : N on NN‐pair (ENN) and A‐line (EN) transitions near the direct (Γ) band edge (1975) (6)
- Electrical properties of Ga(As 1-x P x ) p-n junctions (1963) (6)
- Comparison of SiIII‐SiV and SiIII‐VIII diffusion models in III‐V heterostructures lattice matched to GaAs (1988) (6)
- Lateral feeding design and selective oxidation process in vertical cavity transistor laser (2013) (6)
- Isoelectronic trap transitions in GaAs1−xPx:N in the region of resonant enhancement (ENN ∼ EΓ, 0.3 (1973) (6)
- Behavior of carrier lifetime spectra (77 °K) in GaAs1−xPx (1975) (6)
- Recombination processes involving Zn and N inGaAs1−xPx (1974) (6)
- HYDROGENATION-DEFINED STRIPE-GEOMETRY IN0.5(ALXGA1-X)0.5P QUANTUM-WELL LASERS (1990) (6)
- Observation of the upper branch (N′Γ) of the nitrogen isoelectronic trap in GaAs1−yPy (1977) (6)
- High transparency of thin platelet semiconductor lasers (1968) (6)
- Stimulated emission in strained GaAs1−xPx‐GaAs1−yPy superlattices (1983) (6)
- GaAs1-yPy heterojunction lasers (1977) (5)
- Transistor Laser With 13.5-Gb/s Error-Free Data Transmission (2014) (5)
- Si‐Si pair diffusion and correlation in AlxGa1−xAs and GaAs (1985) (5)
- Quantum well to quantum dot phonon-assisted tunneling (2004) (5)
- Improved area density and luminescence properties of InP quantum dots grown on In0.5Al0.5P by metal-organic chemical vapor deposition (2003) (5)
- Liquid phase epitaxial In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/GaAs/sub 1-y/ P/sub y/ heterojunction lasers (1975) (5)
- Photopumped laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures with Se and Mg sheet doping (1986) (5)
- Hydrogenated multiple stripe high‐power long‐wavelength (1.06 μm) continuous (10–50 °C) AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure lasers (1990) (5)
- Si incorporation in laser‐melted AlxGa1−xAs‐GaAs quantum well heterostructures from a dielectric source (1990) (5)
- High-uniformity liquid phase epitaxial InGaAsP (λ = 1.3 μm) (1984) (5)
- Continuous room-temperature photopumped laser operation of visible-spectrum LPE In 1-x Ga x P 1-z As z (λ ~ 6700 Å) (1981) (5)
- Planar native‐oxide buried‐mesa AlxGa1−xAs‐In0.5(AlyGa1−y)0.5P‐ In0.5(AlzGa1−z)0.5P visible‐spectrum laser diodes (1992) (5)
- Distributed feedback transistor laser (2010) (5)
- Bandfilling in liquid phase epitaxial InP‐In1−xGaxP1−zAsz‐InP quantum‐well heterostructure lasers (1978) (5)
- Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser (2010) (5)
- Mode‐locked coupled‐stripe quantum well laser operation (λ∼7350 Å) in a tunable (Δℏω∼37 meV>kT) external grating cavity (1985) (5)
- GaAs‐Pumped GaAs Lasers and the Behavior of Band Tails (1971) (5)
- Time Behavior of Laser Modes in GaAs Platelet Lasers (1969) (5)
- 4-GHz Modulation Bandwidth of Integrated 2$\,\times\,$2 LED Array (2009) (5)
- Pressure study of the N Γ and N X bound-state interaction in nitrogen-doped GaAs 1-x P x (1976) (4)
- TRANSITION FROM EDGE TO VERTICAL CAVITY OPERATION OF TUNNEL CONTACT ALGAAS-GAAS-INGAAS QUANTUM WELL HETEROSTRUCTURE LASERS (1998) (4)
- Measurement of compositional inhomogeneity of liquid phase epitaxial InGaPAs (1983) (4)
- Behavior of Quasi-Fermi Levels in a Nonequilibrium Semiconductor (1966) (4)
- THE VAPOR‐SOLID INTERFACE OF Ga (As1−xPx) SINGLE CRYSTALS GROWN BY HALOGEN‐VAPOR TRANSPORT (1964) (4)
- The Semiconductor p–n Junction “Ultimate Lamp” (2005) (4)
- Effect of crystal composition on the optimization of radiative recombination in N‐free and N‐doped In1−xGaxP light‐emitting diodes (1976) (4)
- Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser (2017) (4)
- Variation of effective index of refraction in a double‐heterojunction laser (In1−xGaxP1−zAsz) (1977) (4)
- Photosensitive Impurity-Assisted Tunneling in Au-Ge-Doped Ga 1-x Al x As p-n Diodes (1972) (4)
- Native‐oxide coupled‐stripe AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure lasers (1991) (4)
- Thin upper‐confining layer AlxGa1−xAs‐GaAs quantum well heterostructure laser diodes (1993) (4)
- Single‐mode single‐lobe operation of broad area AlxGa1−xAs‐GaAs quantum well lasers (1986) (4)
- All optical NOR gate via tunnel-junction transistor lasers for high speed optical logic processors (2018) (4)
- Near‐Bandgap, Narrow‐Spectrum, Low‐Loss, Volume‐Excited GaAs Laser (77°K) with Time‐Uniform Output (1970) (4)
- High-speed (/spl ges/1 GHz) electrical and optical adding, mixing, and processing of square-wave signals with a transistor laser (2006) (4)
- Infrared detection properties of Zn-doped Si p-i-n diodes (1969) (4)
- Effect of thin strain-compensated Al0.6Ga0.4P layers on the growth of multiple-stacked InP/In0.5Al0.3Ga0.2P quantum dots (2006) (4)
- THIN SEMICONDUCTOR LASER TO THIN PLATELET OPTICAL COUPLER (1970) (4)
- Solid solubility of Zn in Si (1969) (4)
- Pressure dependence of AlxGa1−xAs light emitting diodes near the direct‐indirect transition (1985) (4)
- Experimental demonstration of the polarization-dependent photon-mediated carrier redistribution in tunneling injection InP quantum-dot lasers with external-grating feedback (2007) (4)
- Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors (2011) (4)
- Photopumped phonon‐assisted laser operation (77 K) of In0.5(AlxGa1−x)0.5P quantum well heterostructures (1989) (4)
- Long‐Wavelength Shift in the Operation of Lightly Doped Semiconductor Lasers (1972) (3)
- Pressure study of the external quantum efficiency of N‐doped GaAs1−xPx light‐emitting diodes (1976) (3)
- Interface alloy mixing effect in the growth of self-assembled InP quantum dots on InAlGaP matrices by metalorganic chemical-vapor deposition (2005) (3)
- Quantum-Well and Superlattice Lasers: Fundamental Effects (1984) (3)
- Supermode behavior of coupled two‐stripe AlxGa1−xAs‐GaAs quantum‐well heterostructure lasers (1987) (3)
- 7 – QUANTUM-WELL HETEROSTRUCTURE LASERS (1985) (3)
- Reduced temperature sensitivity AlxGa1−xAs‐GaAs quantum well lasers with (Si2)x(GaAs)1−x ‘‘barriers’’ (1986) (3)
- Reliability of photopumped AlxGa1−xAs–GaAs quantum well heterostructure lasers with top and bottom distributed native-oxide reflectors (2000) (3)
- Variable resonator (variable Q) photopumped phonon‐assisted quantum well laser operation (1990) (3)
- Mode‐coupling effects in thin platelet semiconductor lasers (1972) (3)
- Phonon‐assisted stimulated emission in strained‐layer AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well heterostructures (1989) (3)
- Impurity-Induced Layer Disordering in Al x Ga 1−x As-GaAs Quantum well Heterostructures - (1988) (3)
- The III–V Alloy p–n Diode Laser and LED Ultimate Lamp (2013) (3)
- Diffused Silicon Transistors and Switches (1954–55): The Beginning of Integrated Circuit Technology (2003) (3)
- Photopumping of quantum well heterostructures at high or low Q: phonon-assisted laser operation (1990) (3)
- Behavior of above‐gap NN pair states in radiative recombination in GaAs1−xPx : N+ (x=0.24, 77°K) (1974) (3)
- Quantum-well assisted tunneling injection quantum-dot lasers (2002) (3)
- Photosensitive Coulomb blockade in semiconductor p‐n tunnel diodes (1993) (3)
- Metamorphosis of the transistor into a laser (2015) (3)
- 780 nm Oxide-Confined VCSEL With 13.5 Gb/s Error-Free Data Transmission (2014) (3)
- Defect‐accelerated donor diffusion and layer intermixing of GaAs/AlAs superlattices on laser‐patterned substrates (1989) (2)
- Chapter 1 Photopumped III-V Semiconductor Lasers (1979) (2)
- Stacking and layer disordering of AlxGa1−xAs‐GaAs quantum well heterostructures (1986) (2)
- Laser operation of GaAs1−xPx:N (x = 0.37, 77 °K) on photopumped NN3 pair transitions (1973) (2)
- The red-black effect in Ga(As1−xPx) (1964) (2)
- Observation of zero and negative linewidth-enhancement factor in tunneling injection quantum-well-dot laser (2003) (2)
- DISORDER OF AlAs/GaAs SUPERLATTICES BY THE IMPLANTATION AND DIFFUSION OF IMPURITIES. (1983) (2)
- Mode behavior of photopumped AlGaAs–GaAs lasers confined by oxide-semiconductor distributed Bragg reflectors (2000) (2)
- Resonance and switching in a native‐oxide‐defined AlxGa1−xAs‐GaAs quantum‐well heterostructure laser array (1992) (2)
- Device performance of light emitting transistors with C-doped and Zn-doped base layers (2009) (2)
- Improved thermal stability of AlGaAs–GaAs quantum well heterostructures using a ‘‘blocking’’ Zn diffusion to reduce column‐III vacancies (1995) (2)
- "Hump" current dependence upon trapping effects and the relationship to some aspects of the forward-injection failure of GaAs tunnel diodes (1961) (2)
- Growth of InP self-assembled quantum dots on strained and strain-relaxed Inx(Al0.6Ga0.4)1−xP matrices by metal-organic chemical vapor deposition (2006) (2)
- Layer disordering of n‐type (Se) and p‐type (C) AlxGa1−xAs‐GaAs superlattices by S diffusion (1990) (2)
- Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution (2015) (2)
- Tunneling Injection Quantum-Dot Lasers (2005) (2)
- Electron‐hole recombination in nitrogen‐doped direct‐band‐gap GaAs1−xPx (1976) (2)
- Absorption measurements at high pressure (0–10kbar) on strained superlattices (1983) (2)
- Hydrogenation of GaAs and Application to Device processing (1988) (2)
- MP-B1 photopumped MO-CVD quantum-well Al x Ga 1-x As-GaAs-Al x Ga 1-x As heterostructure lasers (x = 0.4-0.6, L z ≥ 200 Å, T = 4.2-300 K) (1978) (2)
- Gain-loss model for the dependence of the stimulated-emission transition in AlGaAs-GaAs quantum well heterostructures on photoexcitation geometry (1989) (2)
- Anomalous threshold current and time delays in index-guided AlxGa1−xAs-GaAs quantum-well lasers (1987) (2)
- IIIb-5.5 liquid phase epitaxial InGaPAs multilayered heterojunction lasers exhibiting "Quantum size effects" (late paper) (1977) (2)
- Direct and photon-assisted tunneling in resonant-cavity quantum-well light-emitting transistors (2018) (2)
- Column III-column V sublattice interaction via Zn and Si impurity-induced layer disordering of 13C-doped AlxGa1−xAs-GaAs superlattices (1990) (2)
- APPLICATION OF TUNNELING TO ACTIVE DIODES (1961) (1)
- Design and operation of distributed feedback transistor lasers (2010) (1)
- Bistability and switching in a native‐oxide‐defined AlxGa1−xAs‐GaAs quantum‐well‐heterostructure laser coupled to a linear array (1992) (1)
- Transistor Laser Optical NOR Gate for High Speed Optical Logic Processors (2017) (1)
- 4378255 Method for producing integrated semiconductor light emitter (1983) (1)
- Tuning the morphology of InP self-assembled quantum structures grown on InAlP surfaces by metalorganic chemical vapor deposition (2005) (1)
- Silicon-controlled rectifiers from oxide-masked diffused structures (1959) (1)
- Quantum well laser operation at low temperature in strong magnetic fields (1983) (1)
- I-2 pulsed room temperature operation of In1-x-GaxP1-zAszdouble heterojunction lasers at high energy (6470 A, 1.916 eV) (1976) (1)
- Electron‐beam‐pumped semiconductor laser using a gas plasma gun (GPG) (1973) (1)
- Spontaneous emission and optical gain due to quantum-well to quantum-dot photon-assisted tunneling (2003) (1)
- Impurity-Induced Layer Disordering: Current Understanding and Areas for Future Investigation (1989) (1)
- Quantum well laser structure (1981) (1)
- The transistor laser (2011) (1)
- Vertical cavity transistor laser for on-chip OICs (2015) (1)
- Fast neutron irradiation-effects on GaAs1-xPx P−N diode laser threshold currents (1965) (1)
- lnP Self Assembled Quantum Dot Lasers Grown on GaAs Substrates by Metalorganic Chemical Vapor Deposition (1)
- Electro-optical hysteresis and bistability in the ring-cavity tunneling-collector transistor laser (2017) (1)
- Transistor Laser for Electronic-Photonic Integrated Circuits (2013) (1)
- Laser Operation and Spectroscopy of Epitaxial GaAs Gunn Oscillator Wafers (1969) (1)
- IIIB-1 a new interpretation of luminescence due to the N isoelectronic trap in GaAs1-xPx (1976) (1)
- The transistor laser: A natural for optoelectronic integrated circuits (2006) (1)
- Scattering (stochastic) recoupling of a coupled ten-stripe AlGaAs–GaAs–InGaAs quantum-well heterostructure laser (2001) (1)
- Planar disorder‐ and native‐oxide‐defined photopumped AlAs–GaAs superlattice minidisk lasers (1996) (1)
- III-V semiconductor quantum-well lasers and related optoelectronic devices (on silicon). Oxide-defined semiconductor quantum-well lasers and optoelectronic devices: Al-based III-V native oxides. Final report (1992) (0)
- Use of native oxides in AlxGa1−xAs QWH lasers (2008) (0)
- MP-B1 photopumped MO-CVD quantum-well AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructure lasers (x = 0.4-0.6, Lz≥ 200 Å, T = 4.2-300 K) (1978) (0)
- Native-Oxide-Defined Semiconductor Quantum Well Lasers and Optoelectronic Devices: A1-Based III-V Native Oxides. (1996) (0)
- InP SELF-ASSEMBLED QUANTUM DOTS EMBEDDED IN Ino.5Alo.3G%.2P GROWN ON'GaAs SUBSTRATES BY METALORGANIC CHEMICAL VAPOR DEPOSITION (2001) (0)
- MP-B8 phonon contribution to quantum-well and to double-heterostructure laser operation (1980) (0)
- InP self assembled quantum dot lasers grown on GaAs substrates by metalorganic chemical vapor deposition (2001) (0)
- JUNCTION EFFECTS IN COMPOUND SEMICONDUCTORS. (1965) (0)
- IIIA-8 IR-red GaAs-AlAs superlattice laser monolithically integrated in a yellow-gap cavity (1981) (0)
- Stimulated emission on N x (''Aline'') recombination transitions in nitrogenimplanted GaAs1x P x (x0.37) (2014) (0)
- U . S . Patent Sep . 12 , 2000 Sheet 4 of 4 ETCH AlGaAs Wy H 2 SO 4 : H 2 O 2 : H 20 ETCH in Gap W / HC : HFOA Aigure 4 (2017) (0)
- Impurity-Induced Disordering and Laser Device Applications (1987) (0)
- Effects of surface morphology and strain state of InAlGaP matrices on the growth of InP quantum dots by metalorganic chemical vapor deposition (2005) (0)
- IIIA-3 stimulated emission in strained-layer quantum-well heterostructures (1983) (0)
- Direct Tunneling Modulation of Semiconductor Lasers (2019) (0)
- CONTINUOUS OPERATION OF VISIBLE-SPECTRUM In//1// minus //xGa//xP//1// minus //zAs//z LASER DIODES (6280 A, 77 K). (1978) (0)
- Tunneling involving defects in LPE In/1-x/Ga/x/P/1-z/As/z/ /x of about 0.12, z of about 0.26/ double-heterojunction lasers (1977) (0)
- Space-charge-limited emission and oscillation effects in gold-doped silicon p-"i"-n diodes (1967) (0)
- Optimizing the growth of vertically stacked InP/In/sub 0.5/Al/sub 0.3/Ga/sub 0.2/P quantum dots by metalorganic chemical vapor deposition (2003) (0)
- GaA1As/CaAs Quantum-Well Lasers by Metalorganic Chemical-Vapor Deposition (1984) (0)
- IIIA-1 liquid phase epitaxial (LPE) grown junction In 1-x Ga x P (x ∼ 0.63) laser of wavelength λ ∼ 5900 Å (2.10 eV, 77 K) (1974) (0)
- Mode reduction, Q loss, gain saturation, and bandfilling modification of the light versus current characteristics of thin (∼0.9 μm) quantum well heterostructure lasers (1996) (0)
- Thermal behavior and stability of room-temperature continuous Al/sub x/Ga/sub 1-x/As-GaAs quantum well heterostructure lasers grown on Si (1988) (0)
- Phonon-Assisted Recombination in a Multiple-Quantum-Well LPE InP-In sub 1-x Ga sub x P sub 1-z As sub z Heterostructure Laser, (1979) (0)
- Semiconductor Quantum Well Lasers and Related Optoelectronic Devices on Silicon, 3-5 (1989) (0)
- IVA-6 high-energy (λ ≤ 7300 Å) 300-K operations of single- and multiple-stripe quantum-well heterostructure laser diodes in an external grating cavity (1984) (0)
- InP self-assembled quantum dots embedded in In/sub 0.5/Al/sub 0.3/Ga/sub 0.2/P grown on GaAs substrates by metalorganic chemical vapor deposition (2001) (0)
- The three to five semiconductor quantum well lasers and related optoelectronic devices on silicon (1992) (0)
- Visible Semiconductor Laser Operation Below 640 Nm At Room Temperature (1988) (0)
- Determination of the Valence-Band Discontinuity of InP-In sub 1-x Ga sub x P sub 1- z As sub z (x approximately 0.13, z approximately 0.29) by Quantum- Well Luminescence, (1979) (0)
- Compound Semiconductors (2022) (0)
- Stimulated Emission in Lossy Semiconductor Laser Modes (1970) (0)
- Erratum: “Microwave extraction method of radiative recombination lifetime and photon lifetimes up to 85 °C on 50 Gb/s oxide-vertical cavity surface emitting laser” [J. Appl. Phys. 120, 223103 (2016)] (2017) (0)
- Iii-v semiconductor quantum-well lasers and related opto-electronic devices on silicon. Technical report (1989) (0)
- Ingaasp quaternary materials for near infrared detector and laser applications. Final report, 1 January 1977-29 February 1980 (1980) (0)
- Growth and characterization of InAlGaP superlattice lasers (1999) (0)
- Quantum-well transistor laser for optical interconnect and photonic integrated circuits (2014) (0)
- Session A: Epitaxy for Devices Session B: Joint EMC & DRC Session on Modeling of Materials and Nanostructures Session C: Contacts to Wide Bandgap Semiconductors - I (2001) (0)
- Mn diffusion in GaAs and its effect on impurity-induced layer disordering in GaAs–AlGaAs superlattices (2020) (0)
- An Observation of Circular Patterns in the Vicinity of Small‐Area Alloyed Germanium p‐n Junctions (1955) (0)
- Low-threshold LPE In/sub 1-x'/Ga/sub x'/As/sub z'//In/sub 1-x/Ga/sub x/P/ sub 1-z/As/sub z//In/sub 1-x'/Ga/sub x'/P/sub 1-z'/As/sub z'/ yellow double-heterojunction laser diodes (J<10$sup 4$ A/cm$sup 2$, lambdaapprox. =5850 A, 77 degreeK) (1975) (0)
- The Construction and Study of Improved Al(x)Ga(1-x)As-GaAs Heterostructure Devices. (1989) (0)
- I-3 observations of inhomogeneous or homogeneous line broadening in In1-xGaxP1-zAszdouble heterojunctions operated in external grating cavities (1976) (0)
- On the -Influence of Crystal Orientation Grown GaAs Laser Diodes (1968) (0)
- VB-6 continuous room-temperature laser operation of Al x Ga 1-x As-GaAs quantum well heterostructures grown on Si (1987) (0)
- Two‐phonon laser operation (4.2–77 K) of photopumped AlxGa1−xAs‐GaAs quantum well heterostructures (1990) (0)
- Physical Processes for Quantum-Well to Quantum-Dot Tunneling (2004) (0)
- I-1 The first 40 years: Reminiscences of some of DRC's significant events (1982) (0)
- High quality GaInP grown by gas source molecular beam epitaxy (1990) (0)
- GaAlAs/GaAs quantum-well lasers by metalorganic chemical-vapor deposition (A) (1984) (0)
- Gas plasma gun (GPG) electron-beam pumped semiconductor laser (1973) (0)
- III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices on Silicon (Abstracts) (1990) (0)
- Low-threshold room-temperature continuous-wave InP quantum dot coupled to InGaP quantum well heterorstructure lasers grown by metalorganic chemical vapor deposition (2003) (0)
- Impurity-induced disordering in multilayer structures (1986) (0)
- III-V semiconductor quantum-well lasers and related optoelectronic devices (on silicon). Final report, 15 Nov 88-31 May 92 (1992) (0)
- Layer Disordering and Carrier Concentration in Heavily Carbon-Doped AlGaAs/GaAs Superlattices (1993) (0)
- TA-B7 phonon-assisted recombination in quantum-well MO-CVD AlxGa1-xAs-GaAs heterostructure lasers (1979) (0)
- ROOM-TEMPERATURE VISIBLE In//1// minus //xGa//xP//1// minus //z(x less than equivalent to 1, z similar 0. 6) HETEROJUNCTION LASERS. (1976) (0)
- Semiconductor quantum-well lasers and related optoelectronic devices on silicon, III-V. Technical report (1989) (0)
- Tunneling injection quantum-dot laser: Theory and experiment (2004) (0)
- Novel Engineered Compound Semiconductor Heterostructures for Advanced Electronics Applications (1992) (0)
- Liquid phase epitaxial In/sub 1-x/Ga/sub x/P(xapprox.0.63) junction laser in the yellow spectral region (lambdaapprox.5900 A, 2.10 eV, 77$sup 0$K) (1975) (0)
- Current and future trend of energy/bit for high speed uncool optical links (50 Gb/s and 75°C) (2017) (0)
- IIA-7 A Novel SAL-PINSCH Quantum-Well Laser Structure (1991) (0)
- Quantum well heterestrueture lasers (1983) (0)
- CONTINUOUS ROOM-TEMPERATURE LASER OPERATION OF AL//XGA//1// minus //XAS-GAAS QUANTUM WELL HETEROSTRUCTURES GROWN ON SI. (1987) (0)
- QUANTUM WELL LASER STRUCTURE (Invited) (1981) (0)
- VCSEL and Smart Pixel Research for VLSI Photonics (2003) (0)
- Progress in Semiconductor Materials IV-Electronic and Optoelectronic Applications November 29-December 3 , 2004 Chairs (2004) (0)
- Novel Engineered Compound Semiconductor Heterostructures for Advanced Electronic and Optoelectronic Integrated Circuit Applications. (1996) (0)
- Heterojunction laser operation of GaAs/sub 1-x/P/sub x/:N on NN-pair E/sub NN/ and A-line E/sub N/ transitions near the direct (GAMMA) band edge (1975) (0)
- IVA-8 low-threshold AlGaAs laser diodes fabricated by silicon impurity-induced disordering (1985) (0)
- AlxGa1-xAs/GaAs Quantum Well Heterojunction Lasers Grown By Molecular Beam Epitaxy (1982) (0)
- Electro-Optical Bistability in Semiconductor Laser (2018) (0)
- III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices on Silicon (1989) (0)
- Native oxide top-and bottom-confined narrow stripe p-n AI , Ga ,-, A + GaAs-ln , Ga 1-, A $ quantum well heterostructure laser (1999) (0)
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