Nicolas Grandjean

Nicolas Grandjean's AcademicInfluence.com Rankings

Nicolas Grandjean

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According to Wikipedia, Nicolas Grandjean is a French professor of physics. His achievements include over 600 books and articles, giving him an h-index of 62. Biography Grandjean was born in Dijon, France, and is a citizen of that country. He studied at the University of Clermont-Ferrand and Nice-Sophia Antipolis. In 1991, he joined the Solid-State Physics and Solar Energy Laboratory, a division of the French National Center for Scientific Research where he studied physical properties of nanostructures. By 1994 he obtained his Ph.D. and became a CNRS winner. Later on, as a senior research fellow, he worked at the Research Center for Heteroepitaxy and its Applications, a division of Sophia Antipolis. In 2004 he became a tenure professor at the École Polytechnique Fédérale de Lausanne and in June 2009 assisted in the creation of the Novagan startup, following by becoming a director of the Laboratory of Advanced Semiconductors for Photonics and Electronics where he still serves.

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Nicolas Grandjean's Published Works

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Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Room-temperature polariton lasing in semiconductor microcavities. (2007) (697)
TEMPERATURE QUENCHING OF PHOTOLUMINESCENCE INTENSITIES IN UNDOPED AND DOPED GAN (1999) (437)
Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells. (1998) (345)
High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures (2006) (297)
Current status of AlInN layers lattice-matched to GaN for photonics and electronics (2007) (292)
From visible to white light emission by GaN quantum dots on Si(111) substrate (1999) (260)
Room temperature polariton lasing in a GaN∕AlGaN multiple quantum well microcavity (2008) (247)
Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells (1999) (236)
High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy (2001) (203)
Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers (1996) (183)
Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices? (2006) (165)
Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03 <= x <= 0.23) (2008) (161)
Barrier-width dependence of group-III nitrides quantum-well transition energies (1999) (156)
205-GHz (Al,In)N/GaN HEMTs (2010) (153)
Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials (2005) (151)
Spontaneous polarization buildup in a room-temperature polariton laser. (2008) (149)
Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate (2012) (143)
Molecular Beam Epitaxy of Group‐III Nitrides on Silicon Substrates: Growth, Properties and Device Applications (2001) (138)
Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field (2014) (126)
Epitaxial growth of highly strained InxGa1−xAs on GaAs(001): the role of surface diffusion length☆ (1993) (125)
Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells (1999) (124)
High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy (2001) (118)
Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy (1998) (117)
Barrier-Layer Scaling of InAlN/GaN HEMTs (2008) (116)
Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells (2001) (115)
High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates (2000) (113)
Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕GaN Bragg mirrors (2005) (112)
Testing the Temperature Limits of GaN-Based HEMT Devices (2010) (110)
Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth (1999) (107)
Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors (2009) (103)
Radiative lifetime of a single electron-hole pair in GaN/AlN quantum dots (2006) (103)
GaN evaporation in molecular-beam epitaxy environment (1999) (101)
Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire (1997) (96)
GaN and AlxGa1−xN molecular beam epitaxy monitored by reflection high-energy electron diffraction (1997) (93)
Recombination coefficients of GaN-based laser diodes (2011) (89)
Recent Progress in the Growth of Highly Reflective Nitride-Based Distributed Bragg Reflectors and Their Use in Microcavities (2005) (88)
Polariton lasing in a hybrid bulk ZnO microcavity (2011) (87)
Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr$\hbox{O}_{\bm 2}$ or Hf $\hbox{O}_{\bm 2}$ (2008) (86)
Midinfrared intersubband absorption in lattice-matched AlInN/GaN multiple quantum wells (2005) (86)
Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency (2017) (85)
Crack-free highly reflective AlInN /AlGaN Bragg mirrors for UV applications (2006) (84)
Broadband blue superluminescent light-emitting diodes based on GaN (2009) (81)
Room-temperature polariton luminescence from a bulk GaN microcavity (2006) (79)
GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells (2018) (78)
Molecular-beam epitaxy of gallium nitride on (0001) sapphire substrates using ammonia (1998) (78)
High spatial resolution picosecond cathodoluminescence of InGaN quantum wells (2006) (77)
Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory (2010) (75)
Status of the Emerging InAlN/GaN Power HEMT Technology (2008) (72)
Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime (2008) (72)
InGaN based micro light emitting diodes featuring a buried GaN tunnel junction (2015) (72)
InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K (2000) (72)
Gas source molecular beam epitaxy of wurtzite GaN on sapphire substrates using GaN buffer layers (1997) (71)
Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors (2007) (71)
Group-III nitride quantum heterostructures grown by molecular beam epitaxy (2001) (71)
Self-limitation of AlGaN/GaN quantum well energy by built-in polarization field (1999) (71)
Real time control of InxGa1-xN molecular beam epitaxy growth (1998) (70)
Impact of disorder on high quality factor III-V nitride microcavities (2006) (69)
SURFACTANT MEDIATED EPITAXIAL-GROWTH OF INXGA1-XAS ON GAAS (001) (1992) (69)
Polarity inversion of GaN(0001) by a high Mg doping (2004) (68)
High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate (2012) (67)
MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs (2007) (67)
Strain compensation in AlInN/GaN multilayers on GaN substrates: Application to the realization of defect-free Bragg reflectors (2011) (66)
Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes (2002) (66)
InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess (2009) (65)
Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells (2001) (65)
Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy (2009) (64)
Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field (2008) (62)
Role of stable and metastable Mg-H complexes in p-type GaN for cw blue laser diodes (2011) (62)
Integrated photonics on silicon with wide bandgap GaN semiconductor (2013) (61)
Fully Passivated AlInN/GaN HEMTs With $f_{\rm T}/f_{\rm MAX}$ of 205/220 GHz (2011) (61)
High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers (2008) (60)
Thermal stability of GaN investigated by Raman scattering (1998) (60)
Blue lasing at room temperature in an optically pumped lattice-matched AlInN=GaN VCSEL structure (2007) (60)
Effects of strain and composition on the lattice parameters and applicability of Vegard"s rule in Al-rich Al1-xInxN films grown on sapphire (2008) (60)
AlGaN/GaN HEMT on (111) single crystalline diamond (2010) (59)
Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation (2009) (58)
Critical impact of Ehrlich-Schwobel barrier on GaN surface morphology during homoepitaxial growth (2016) (58)
Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates (2013) (58)
102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz (2009) (57)
Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells (2007) (57)
Two-color GaN/AlGaN quantum cascade detector at short infrared wavelengths of 1 and 1.7 μm (2012) (56)
Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27–2.4 μm (2003) (56)
In surface segregation in InGaN/GaN quantum wells (2003) (56)
Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy : Applications to intersubband transitions (2006) (55)
GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment (1999) (53)
Epitaxial relationships between GaN and Al2O3(0001) substrates (1997) (53)
Continuous wave blue lasing in III-nitride nanobeam cavity on silicon. (2015) (51)
Diamond overgrown InAlN/GaN HEMT (2011) (50)
Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation (2004) (50)
Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes (2001) (49)
94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts (2015) (49)
Impact of inhomogeneous excitonic broadening on the strong exciton-photon coupling in quantum well nitride microcavities (2006) (48)
Gate‐lag and drain‐lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs (2007) (48)
Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures (2002) (47)
Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN (1999) (47)
High doping level in Mg-doped GaN layers grown at low temperature (2008) (47)
Injection Dependence of the Electroluminescence Spectra of Phosphor Free GaN-Based White Light Emitting Diodes (2002) (47)
Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers (2005) (47)
High-al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy (2003) (47)
Strain-induced interface instability in GaN/AlN multiple quantum wells (2007) (45)
Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence (2016) (45)
Time dependence of the photoluminescence of GaN/AlN quantum dots under high photoexcitation (2003) (44)
M-Plane GaN/InAlN Multiple Quantum Wells in Core-Shell Wire Structure for UV Emission (2014) (44)
InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment (2012) (43)
Visible InGaN/GaN Quantum-Dot Materials and Devices (2007) (43)
Ultraviolet GaN light-emitting diodes grown by molecular beam epitaxy using NH3 (1998) (43)
Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N (2016) (42)
Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with FT = 143 GHz (2010) (42)
Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes (2004) (41)
Molecular Beam Epitaxy of GaN under N-rich Conditions using NH3 (1999) (41)
Polariton lasers (2012) (41)
Small-signal characteristics of AlInN/GaN HEMTs (2006) (41)
Near infrared absorption and room temperature photovoltaic response in AlN∕GaN superlattices grown by metal-organic vapor-phase epitaxy (2006) (41)
GaN epitaxial growth on sapphire (0 0 0 1): The role of the substrate nitridation (1997) (40)
Room temperature polariton luminescence from a GaN/AlGaN quantum well microcavity (2006) (40)
Mg doping for p-type AlInN lattice-matched to GaN (2012) (40)
Surface segregation in (Ga,In)As/GaAs quantum boxes (1997) (40)
Efficient current injection scheme for nitride vertical cavity surface emitting lasers (2007) (39)
Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN (2009) (39)
Study of the epitaxial relationships between III-nitrides and M-plane sapphire (2010) (39)
Surfactant-mediated molecular-beam epitaxy of III–V strained-layer heterostructures (1995) (38)
Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy (2004) (38)
Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate (2000) (38)
Stranski-Krastanov GaN∕AlN quantum dots grown by metal organic vapor phase epitaxy (2006) (37)
GaInN GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy (1999) (37)
Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells (2017) (36)
Thermally induced voltage shift in capacitance–voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures (2009) (36)
Temperature Dependence of Optical Properties of h-GaN Films Studied by Reflectivity and Ellipsometry (2000) (36)
Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes (2010) (35)
High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells (2010) (35)
GaN/AlGaN quantum wells for UV emission: heteroepitaxy versus homoepitaxy (2001) (34)
Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation (2002) (34)
Engineering the Lateral Optical Guiding in Gallium Nitride-Based Vertical-Cavity Surface-Emitting Laser Cavities to Reach the Lowest Threshold Gain (2013) (34)
Control of the polarity of GaN films using an Mg adsorption layer (2003) (34)
Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence (2010) (34)
AlN grown on Si(1 1 1) by ammonia-molecular beam epitaxy in the 900–1200 °C temperature range (2017) (33)
Scale Effects on Exciton Localization and Nonradiative Processes in GaN/AlGaN Quantum Wells (2000) (33)
Structural Defects and Relation with Optoelectronic Properties in Highly Mg-Doped GaN (2002) (33)
Observation of long-lived oblique excitons in GaN-AlGaN multiple quantum wells (1999) (33)
Critical thickness of GaN on AlN: impact of growth temperature and dislocation density (2017) (33)
A simplified GaN/AlGaN quantum cascade detector with an alloy extractor (2012) (33)
Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors (2014) (33)
MBE growth of AlGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances (2003) (33)
Selective oxidation of AlInN layers for current confinement in III–nitride devices (2005) (33)
Phase diagram of a polariton laser from cryogenic to room temperature (2009) (32)
AlInN-Based HEMTs for Large-Signal Operation at 40 GHz (2013) (32)
High-temperature Mott transition in wide-band-gap semiconductor quantum wells (2014) (32)
Submicron periodic poling and chemical patterning of GaN (2005) (32)
Combining diamond electrodes with GaN heterostructures for harsh environment ISFETs (2009) (32)
Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics (2011) (32)
Proposal and Performance Analysis of Normally Off $ \hbox{n}^{++}$ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier (2010) (32)
Propagating Polaritons in III-Nitride Slab Waveguides (2016) (32)
Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m -plane InGaN/GaN quantum wells (2016) (32)
Influence of high Mg doping on the microstructural and optoelectronic properties of GaN (2002) (31)
GaN/AlxGa1−xN quantum wells grown by molecular beam epitaxy with thickness control at the monolayer scale (1998) (31)
Sputtering of (001)AlN thin films: Control of polarity by a seed layer (2010) (31)
Elastic misfit stress relaxation in highly strained InGaAs/GaAs structures (1994) (31)
Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers (2009) (31)
Efficient continuous-wave nonlinear frequency conversion in high-Q gallium nitride photonic crystal cavities on silicon (2016) (31)
OPTICAL STUDY OF SEGREGATION EFFECTS ON THE ELECTRONIC PROPERTIES OF MOLECULAR-BEAM-EPITAXY GROWN (IN,GA)AS/GAAS QUANTUM WELLS (1997) (31)
Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region (2013) (31)
Multilayer (Al,Ga)N structures for solar-blind detection (2004) (30)
Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations (2018) (30)
Analysis of structurally sensitive loss in GaN-based VCSEL cavities and its effect on modal discrimination. (2014) (30)
Surface kinetics of GaN evaporation and growth by molecular-beam epitaxy (2000) (30)
Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence (2014) (29)
A quantum optical study of thresholdless lasing features in high-β nitride nanobeam cavities (2018) (29)
In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111) (2000) (29)
Leakage mechanisms in InAlN based heterostructures (2014) (29)
Near-infrared characterization of gallium nitride photonic-crystal waveguides and cavities. (2012) (28)
Microroughness and exciton localization in (Al,Ga)As/GaAs quantum wells (1997) (28)
InGaN laser diode with metal-free laser ridge using n+-GaN contact layers (2016) (27)
Inelastic Light Scattering by Phonons in Hexagonal GaN–AlN Nanostructures (2001) (27)
Polarization field mapping of Al0.85In0.15N/AlN/GaN heterostructure (2009) (27)
Optical investigation of micrometer and nanometer-size individual GaN pillars fabricated by reactive ion etching (2002) (27)
Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures (2001) (26)
Room temperature polariton lasing in III-nitride microcavities: a comparison with blue GaN-based vertical cavity surface emitting lasers (2009) (26)
Stress-modulated composition in the vicinity of dislocations in nearly lattice matched Al x In 1 − x N/GaN heterostructures: A possible explanation of defect insensitivity (2011) (26)
Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy (2016) (26)
Stress control in GaN/sapphire templates for the fabrication of crack-free thick layers (2006) (26)
Comprehensive description of the dynamical screening of the internal electric fields of AlGaN/GaN quantum wells in time-resolved photoluminescence experiments (2003) (26)
Superluminescent light emitting diodes: the best out of two worlds (2012) (26)
InAlN underlayer for near ultraviolet InGaN based light emitting diodes (2019) (26)
Pinning and depinning of the polarization of exciton-polariton condensates at room temperature. (2010) (26)
Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors (2013) (26)
a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy (2007) (25)
Improvement of the growth of InxGa1−xAs on GaAs (001) using Te as surfactant (1993) (25)
Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors (2010) (25)
Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon (2020) (25)
Effect of fluoride plasma treatment on InAlN/GaN HEMTs (2008) (25)
Spin and interaction effects in Shubnikov–de Haas oscillations and the quantum Hall effect in GaN/AlGaN heterostructures (2004) (25)
On thresholdless lasing features in high-$\beta$ nitride nanobeam cavities: a quantum optical study (2016) (25)
High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates (2006) (25)
Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics (2011) (24)
Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures (2011) (24)
GaN and GaInN quantum dots: an efficient way to get luminescence in the visible spectrum range (2000) (24)
On the origin of basal stacking faults in nonpolar wurtzite films epitaxially grown on sapphire substrates (2012) (23)
A novel class of coherent light emitters: polariton lasers (2010) (23)
Lattice-Matched GaN–InAlN Waveguides at $\lambda=1.55\ \mu$m Grown by Metal–Organic Vapor Phase Epitaxy (2008) (23)
Doubly resonant second-harmonic generation of a vortex beam from a bound state in the continuum (2020) (23)
Gallium nitride L3 photonic crystal cavities with an average quality factor of 16 900 in the near infrared (2014) (23)
Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response (2012) (23)
Optical and structural characterization of self-organized stacked GaN/AlN quantum dots (2004) (23)
Real‐time investigation of In surface segregation in chemical beam epitaxy of In0.5Ga0.5P on GaAs (001) (1996) (22)
100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With ${F}_{ \rm T} = \hbox{144}\ \hbox{GHz}$ (2010) (22)
Optical, structural, and morphological characterisation of epitaxial ZnO films grown by pulsed-laser deposition (2013) (22)
Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07 ≤ x ≤ 0.21) by means of a detailed charge balance equation (2010) (22)
Molecular beam epitaxy growth of nitride materials (1999) (22)
M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy (2009) (22)
Extension of the layer-by-layer growth regime of InxGa1-xAs on GaAs (001) (1993) (22)
GaN grown on (1 1 1) single crystal diamond substrate by molecular beam epitaxy (2009) (21)
Room-temperature transport of indirect excitons in (Al,Ga)N/GaN quantum wells (2016) (21)
Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy (2016) (21)
Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers (2016) (21)
Modelling of thermally detected optical absorption and luminescence of (In, Ga)N/GaN heterostructures (2000) (21)
Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600 $^{\circ} {\rm C}$) Electronics (2013) (21)
Evaluation of AlInN=GaN HEMTs on sapphire substrate in microwave, time and temperature domains (2007) (21)
Narrow UV emission from homogeneous GaN/AlGaN quantum wells (2007) (20)
n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts (2014) (20)
Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography (2018) (20)
Blue laser diodes including lattice-matched Al 0.83 In 0.17 N bottom cladding layer (2008) (20)
Self‐aligned normally‐off metal–oxide–semiconductor n++GaN/InAlN/GaN high electron mobility transistors (2015) (20)
Density control of GaN quantum dots on AlN single crystal (2019) (20)
Fabrication of GaN photonic crystals for 400 nm wavelength (2001) (20)
Built-in electric field and large Stokes shift in near-lattice-matched GaN∕AlInN quantum wells (2008) (20)
Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions (2009) (20)
Coupled longitudinal optic phonon-plasmon modes in p-type GaN (1998) (19)
AlGaN-Free Blue III–Nitride Laser Diodes Grown on c-Plane GaN Substrates (2010) (19)
Time‐Resolved Spectroscopy of MBE‐Grown InGaN/GaN Self‐Formed Quantum Dots (2000) (19)
Low-Noise Microwave Performance of 0.1 $\mu$m Gate AlInN/GaN HEMTs on SiC (2010) (19)
GaN-on-insulator technology for high-temperature electronics beyond 400 °C (2013) (19)
Current collapse reduction in InAIM/GaN MOS hemtHEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO 2 high-k gate dielectrics (2009) (19)
Optical studies of highly strained InGaAs/GaAs quantum wells grown on vicinal surfaces (1997) (19)
Signature of GaN-AlN quantum dots by nonresonant Raman scattering (2000) (18)
Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN (2001) (18)
Inhomogeneous broadening of AlxGa1-xN/GaN quantum wells (2005) (18)
InGaN heterostructures grown by molecular beam epitaxy:. from growth mechanism to optical properties (2001) (18)
VIOLET TO ORANGE ROOM TEMPERATURE LUMINESCENCE FROM GAN QUANTUM DOTS ON SI(111) SUBSTRATES (1999) (18)
Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications (2017) (17)
High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate (2010) (17)
Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes (2019) (17)
Direct signature of strained GaN quantum dots by Raman scattering (2001) (17)
Off-state breakdown in InAlN/AlN/GaN high electron mobility transistors (2009) (17)
Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates (2012) (17)
Advantages and remaining issues of state-of-the-art m-plane freestanding GaN substrates grown by halide vapor phase epitaxy for m-plane InGaN epitaxial growth (2012) (17)
Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells (2015) (17)
Dynamics of excitons in GaN-AlGaN MQWs with varying depths, thicknesses and barrier widths (1999) (17)
The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes (2002) (17)
Raman scattering in GaN pillar arrays (2002) (17)
Optical absorption and oxygen passivation of surface states in III-nitride photonic devices (2018) (17)
Effects of Polarization in Optoelectronic Quantum Structures (2008) (16)
Alloy disorder limited mobility of InGaN two-dimensional electron gas (2018) (16)
About some optical properties of AlxGa1−xN /GaN quantum wells grown by molecular beam epitaxy (2004) (16)
Static and dynamic properties of multi-section InGaN-based laser diodes (2012) (16)
Impact of saturation on the polariton renormalization in III-nitride based planar microcavities (2013) (16)
Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes (2014) (16)
Standard‐free composition measurements of Alx In1–xN by low‐loss electron energy loss spectroscopy (2011) (16)
High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers (2009) (16)
Photoluminescence energy and interface chemistry of GaInP/GaAs quantum wells (1997) (16)
Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors (2001) (16)
High Performance Solar Blind Detectors Based on AlGaN Grown by MBE on Si (2001) (16)
Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells (2002) (15)
Carrier dynamics in group-III nitride low-dimensional systems: Localization versus quantum-confined Stark effect (2001) (15)
Surface morphology of GaN grown by molecular beam epitaxy (2001) (15)
Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors (2010) (15)
Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes (2011) (15)
Extremely sharp dependence of the exciton oscillator strength on quantum-well width in the GaN/AlxGa1-xN system: The polarization field effect (2001) (15)
Thermal oxidation of lattice matched InAlN/GaN heterostructures (2010) (15)
$W$ -Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon (2016) (15)
Internal photoemission in solar blind AlGaN Schottky barrier photodiodes (2005) (15)
Cavity-enhanced optical Hall effect in two-dimensional free charge carrier gases detected at terahertz frequencies. (2015) (15)
Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities (2012) (15)
Molecular beam epitaxy of high quality InGaN alloys using ammonia: Optical and structural properties (1998) (15)
Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy (2020) (15)
Mode locking in monolithic two-section InGaN blue-violet semiconductor lasers (2013) (15)
Improved GaInAs/GaAs heterostructures by high growth rate molecular beam epitaxy (1994) (15)
Bias-dependent absorption coefficient of the absorber section in GaN-based multisection laser diodes (2010) (14)
III-nitride photonic cavities (2020) (14)
InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening (2014) (14)
One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells (2011) (14)
Nonpolar GaN-based microcavity using AlN∕GaN distributed Bragg reflector (2008) (14)
Interface States and Trapping Effects in Al2O3- and ZrO2/InAlN/AlN/GaN Metal–Oxide–Semiconductor Heterostructures (2009) (14)
Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg Reflector (2003) (13)
GaN on Si(111): From Growth Optimization to Optical Properties of Quantum Well Structures (1999) (13)
Tailoring the light-matter coupling in anisotropic microcavities: Redistribution of oscillator strength in strained m-plane GaN/AlGaN quantum wells (2011) (13)
Biexcitonic molecules survive excitons at the Mott transition (2014) (13)
Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green (2011) (13)
Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells (2010) (13)
Reduction of carrier in-plane mobility in group-III nitride based quantum wells : The role of internal electric fields (2001) (13)
Interface Effects on the Photoluminescence of GaAs/GaInP Quantum Wells (1998) (13)
Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics (2021) (13)
Study of light emission from GaN/AlGaN quantum wells under power-dependent excitation (2002) (13)
First demonstration of plasmonic GaN quantum cascade detectors with enhanced efficiency at normal incidence. (2014) (13)
Enhanced luminescence efficiency due to exciton localization in self-assembled InGaN/GaN quantum dots (2000) (13)
TEM and XANES study of MOVPE grown InAIN layers with different indium content (2011) (12)
Origin of the Blue Shift Observed in Highly Strained (Ga, In)As Quantum Wells Grown on GaAs(001) Vicinal Surfaces (1995) (12)
GaN-based superluminescent diodes with long lifetime (2016) (12)
Growth of Thick GaN Layers by Hydride Vapor Phase Epitaxy on Sapphire Substrate with Internally Focused Laser Processing (2013) (12)
Solar blind detectors based on AlGaN grown on sapphire (2005) (12)
Selective etching of AlInN/GaN heterostructures for MEMS technology (2007) (12)
Optoelectronic characterization of blue InGaN/GaN LEDS grown by MBE (2001) (12)
Optically pumped long external cavity InGaN/GaN surface-emitting laser with injection seeding from a planar microcavity (2012) (12)
Barrier layer downscaling of InAIN/GaN HEMTs (2007) (12)
InAlN∕GaN metal-oxide-semiconductor high electron mobility transistor with Al2O3 insulating films grown by metal organic chemical vapor deposition using Ar and NH3 carrier gases (2009) (12)
In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on m- and r-plane Sapphire Substrates (2009) (12)
Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN (2014) (12)
GaN based LEDs grown by molecular beam epitaxy (1997) (12)
Photoreflectance spectroscopy as a powerful tool for the investigation of GaN–AlGaN quantum well structures (1999) (12)
Influence of GaN capping on performance of InAlN/AlN/GaN MOS‐HEMT with Al2O3 gate insulation grown by CVD (2008) (12)
Band edge versus deep luminescence of InxGa1−xN layers grown by molecular beam epitaxy (1998) (11)
Optical bistability in InGaN-based multisection laser diodes (2011) (11)
Impact of quantum confinement and quantum confined Stark effect on biexciton binding energy in GaN∕AlGaN quantum wells (2008) (11)
Indium surface segregation during chemical beam epitaxy of Ga1-xInxAs/GaAs and Ga1-xInxP/GaAs heterostructures (1997) (11)
Thin-Wall GaN/InAlN Multiple Quantum Well Tubes. (2017) (11)
Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques (2013) (11)
Effect of Anodic Oxidation on the Characteristics of Lattice-Matched AlInN/GaN Heterostructures (2008) (11)
Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures (2014) (11)
Surface morphology of AlN and size dispersion of GaN quantum dots (2005) (11)
Investigation of InGaN/GaN quantum wells for polariton laser diodes (2012) (11)
Biexciton kinetics in GaN quantum wells:Time-resolved and time-integrated photoluminescence measurements (2008) (11)
Hybrid and Passive Mode-Locking of a Monolithic Two-Section MQW InGaN/GaN Laser Diode (2013) (11)
Improved radiative efficiency using self-formed GaInN/GaN quantum dots grown by molecular beam epitaxy (2000) (11)
Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen (2015) (11)
Lattice-Matched GaN–InAlN Waveguides at = 1:55 m Grown by Metal–Organic Vapor Phase Epitaxy (2008) (11)
Homogeneous and inhomogeneous linewidth broadening of single polar GaN/AlN quantum dots (2009) (11)
Growth mode induced carrier localization in InGaN/GaN quantum wells (2007) (11)
Dielectric microcavity in GaN/Si (2001) (10)
Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality (2010) (10)
Near ultraviolet photonic integrated lasers based on silicon nitride (2021) (10)
Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6 (2010) (10)
Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics (2016) (10)
Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature (2020) (10)
Strong Carrier Localization in GaInN/GaN Quantum Dots Grown by Molecular Beam Epitaxy (1999) (10)
Magnetophotoluminescence of GaN/AlxGa1-xN quantum wells: Valence band reordering and excitonic binding energies (2001) (10)
Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well (2012) (10)
Dual Contribution to the Stokes Shift in InGaN–GaN Quantum Wells (2001) (10)
AlN-Capped AlInN/GaN High Electron Mobility Transistors with 4.5 W/mm Output Power at 40 GHz (2013) (10)
Effects of Built-in Polarization Field on the Optical Properties of AlGaN/GaN Quantum Wells (1999) (10)
Nitride‐based heterostructures grown by MOCVD for near‐ and mid‐infrared intersubband transitions (2007) (10)
RF Performance of InAlN/GaN HFETs and MOSHFETs With $f_{T} \times L_{G}$ up to 21 $\hbox{GHz}\cdot \mu\hbox{m}$ (2010) (9)
Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates (2013) (9)
Growth of intersubband GaN/AlGaN heterostructures (2010) (9)
AlInN/GaN a suitable HEMT device for extremely high power high frequency applications (2007) (9)
InAlN/GaN heterostructures for microwave power and beyond (2009) (9)
How to induce the epitaxial growth of gallium nitride on Si(001) (1995) (9)
Tailoring the strong coupling regime in III‐nitride based microcavities for room temperature polariton laser applications (2009) (9)
Contactless electroreflectance of polar and nonpolar GaN/AlGaN quantum wells (2011) (9)
MBE grown InGaN quantum dots and quantum wells: effects of in-plane localization (2000) (9)
Low-temperature growth of n++-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes (2018) (9)
Impact of Mode-Hopping Noise on InGaN Edge Emitting Laser Relative Intensity Noise Properties (2018) (9)
Real-time control of the molecular beam epitaxy of nitrides (1999) (9)
Luminescence and reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE (1996) (9)
InAlN/GaN MOS-HEMT with thermally grown oxide (2009) (8)
Effect of the nucleation layer deposition temperature on the nature of defects in GSMBE GaN films (1999) (8)
Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Density m-Plane In0.05Ga0.95N Epilayer Grown on a Freestanding GaN Substrate (2011) (8)
Short cavity InGaN-based laser diodes with cavity length below 300 μm (2019) (8)
Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence. (2021) (8)
Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors (2012) (8)
Quantification of scattering loss of III-nitride photonic crystal cavities in the blue spectral range (2017) (8)
Temperature dependence of photoluminescence intensities of undoped and doped GaN (1999) (8)
Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in Mbe-Grown GaN-AlGaN Quantum Wells (1998) (8)
Defect states characterization of non-annealed and annealed ZrO2/InAlN/GaN structures by capacitance measurements (2013) (8)
GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface (2021) (8)
Observation of localization effects in InGaN/GaN quantum structures by means of the application of hydrostatic pressure (2004) (8)
Pressure-induced piezoelectric effects in near-lattice-matched GaN/AlInN quantum wells (2008) (8)
Characterization of Near-Edge-Optical Transitions in Undoped and Doped GaN/Sapphire Grown by MOVPE, HVPE, and GSMBE (1996) (8)
LED light sources (light for the future) (2010) (8)
Light-emitting diodes: Solid-state lighting on glass (2011) (8)
Selective heteroepitaxy on deeply grooved substrate: A route to low cost semipolar GaN platforms of bulk quality (2016) (8)
High-temperature annealing of AlGaN: Stress, structural, and compositional changes (2003) (8)
Comparative optical characterization of GaN grown by metal-organic vapor phase epitaxy, gas source molecular beam epitaxy and halide vapor phase epitaxy (1997) (8)
Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam (2016) (8)
High‐speed and low‐noise AlInN/GaN HEMTs on SiC (2011) (7)
Large-k exciton dynamics in GaN epilayers: Nonthermal and thermal regimes (2012) (7)
Two-dimensional "pseudo-donor-acceptor-pairs" model of recombination dynamics in InGaN/GaN quantum wells (2003) (7)
Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots (2022) (7)
GaN on sapphire mesa technology (2012) (7)
Solar blind AlGaN photodetectors with a very high spectral selectivity (2006) (7)
Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN–GaAlN quantum wells grown by molecular beam epitaxy (2001) (7)
Optimization of the ohmic contact processing in InAlN//GaN high electron mobility transistors for lower temperature of annealing (2010) (7)
Phonon Replica Dynamics in High Quality GaN Epilayers and AlGaN/GaN Quantum Wells (2001) (7)
Thermal carrier emission and nonradiative recombinations in nonpolar (Al, Ga) N/GaN quantum wells gr (2012) (7)
InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy (2015) (7)
Optical properties of self-assembled InGaN/GaN quantum dots (2001) (6)
Vectorial near-field imaging of a GaN based photonic crystal cavity (2015) (6)
Photoluminescence excitation spectroscopy of MBE grown InGaN quantum wells and quantum boxes (2001) (6)
Effect of the Nitridation of the Sapphire (0001) Substrate on the GaN Growth (1996) (6)
Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies (2009) (6)
Resonant Raman scattering in (Al,Ga)N/GaN quantum well structures (2000) (6)
Recombination dynamics in GaN/AlGaN quantum wells: The role of built-in fields (2001) (6)
Intraband spectroscopy of self-organized GaN/AlN quantum dots (2003) (6)
Above 500 °C operation of InAlN/GaN HEMTs (2009) (6)
Solitary Pulse-on-Demand Production by Optical Injection Locking of Passively Q-Switched InGaN Diode Lasers Near Lasing Threshold (2014) (6)
Probing alloy formation using different excitonic species: The particular case of InGaN (2018) (6)
Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime (2020) (6)
Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN (2016) (6)
Spin relaxation of free excitons in narrow GaN/AlxGa1-xN quantum wells (2010) (6)
Measurement of polarization-induced electric fields in GaN/AlInN quantum wells (2012) (6)
Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer (2021) (6)
Thermal stability of 5 nm barrier InAlN/GaN HEMTs (2007) (6)
Nuclear microprobe analysis of GaN based light emitting diodes (2001) (6)
Far-field coupling in nanobeam photonic crystal cavities (2016) (6)
Quantum confinement dependence of the energy splitting and recombination dynamics of A and B excitons in a GaN/AlGaN quantum well (2009) (5)
Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range (2021) (5)
Au Free Ohmic Contacts for High Temperature InAlN/GaN HEMT's (2009) (5)
Multilayer porous structures on GaN for the fabrication of Bragg reflectors (2017) (5)
Resonant and non-resonant dynamics of excitons and free carriers in GaN/AlGaN quantum wells (2002) (5)
Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets. (2011) (5)
Si-interdiffusion in heavily doped AlN-GaN-based quantum well intersubband photodetectors (2011) (5)
Temperature Dependence of Hexagonal-GaN Optical Properties below the Bandgap (1999) (5)
Impact of surface morphology on the properties of light emission in InGaN epilayers (2018) (5)
Strain relaxation of AlN epilayers for Stranski Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy (2007) (5)
Excited states of neutral donor bound excitons in GaN (2018) (5)
Critical Thickness for Islanded Growth of Highly Strained I n x G a 1-x A s on GaAs(001) (1994) (5)
Nonlinear emission properties of an optically anisotropic GaN-based microcavity (2012) (5)
Defects in a-GaN grown on r-sapphire by hydride vapor phase epitaxy (2011) (5)
Strong electric field and nonuniformity effects in GaN∕AlN quantum dots revealed by high pressure studies (2006) (5)
Localization in highly strained In0.35Ga0.65As/GaAs ultrathin quantum wells (1993) (5)
ZrO2/InAlN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors with InAlN Barrier of Different Compositions (2013) (5)
Field distribution and collection efficiency in an AlGaN metal–semiconductor–metal detector (2002) (5)
ABOVE 2 A/mm DRAIN CURRENT DENSITY OF GaN HEMTS GROWN ON SAPPHIRE (2007) (5)
Multi-phonon resonant Raman scattering in GaN/AlxGa1-xN quantum wells (1999) (5)
Broadened Bandwidth Amplified Spontaneous Emission from Blue GaN-Based Short-Cavity Superluminescent Light-Emitting Diodes (2020) (5)
Smooth GaN membranes by polarization-assisted electrochemical etching (2021) (5)
RF Performance of InAlN/GaN HFETs and MOSHFETs With up to 21 (2010) (5)
Absorption and Emission of (In,Ga)N/GaN Quantum Wells Grown by Molecular Beam Epitaxy (2001) (4)
In-depth analysis of injection-seeded long external cavity InGaN/GaN surface-emitting laser (2013) (4)
Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells (2001) (4)
Spectroscopy of the electron states in self-organized GaN/AlN quantum dots (2004) (4)
Passive mode-locking in the cavity of monolithic GaN-based multi-section laser diodes (2013) (4)
MONOLAYER THICKNESS CONTROL OF INXGA1-XAS/GAAS QUANTUM-WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY (1994) (4)
Large Built‐in Electric Field and Its Influence on the Pressure Behavior of the Light Emission from GaN/AlGaN Strained Quantum Wells (2001) (4)
Photoreflectance Spectroscopy Investigation of GaN-AlGaN Quantum Well Structures (1999) (4)
Steady‐State and Time‐Resolved Near‐Field Optical Spectroscopy of GaN/AlN Quantum Dots and InGaN/GaN Quantum Wells (2002) (4)
Fermi-level pinning and intrinsic surface states of Al1−xInxN(101¯0) surfaces (2017) (4)
Properties of InAlN layers nearly lattice-matched to GaN and their use for photonics and electronics (2013) (4)
MBE growth of high quality AlGaN/GaN HEMTs on resistive Si[111] substrate with RF small signal and power performances (2002) (4)
Near‐Field Optical Spectroscopy of Multiple Stacked Planes of GaN/AlN Quantum Dots (2001) (4)
Impact ionization of excitons in an electric field in GaN (1999) (4)
Photocapacitance spectroscopy of InAlN nearly lattice-matched to GaN (2016) (4)
Two-dimensional electron gas density in Al 1x In x N/AlN/GaN heterostructures "0.03x0.23… (2008) (4)
RBS studies of AlGaN/AlN Bragg reflectors (2003) (4)
Critical Thickness for Islanded Growth of Highly Strained $\bf In_{\ninmbi x}Ga_{1-{\ninmbi x}}As$ on GaAs(001) (1994) (4)
Strain and compositional fluctuations in Al0.81In0.19N/GaN heterostructures (2016) (4)
Probing exciton density of states through phonon-assisted emission in GaN epilayers: A and B exciton contributions (2010) (4)
Time-resolved spectroscopy of MBE-grown nitride based heterostructures (2000) (4)
Observation of magnetophotoluminescence from a GaN/AlxGa1-xN heterojunction (2002) (4)
Quantification of roughness and spatial distribution of dislocations in MBE and MOVPE grown LED heterostructures (2016) (3)
Determining the nature of excitonic dephasing in high-quality GaN/AlGaN quantum wells through time-resolved and spectrally resolved four-wave mixing spectroscopy (2017) (3)
Peculiarities in the pressure dependence of photoluminescence in InAlN (2013) (3)
Contribution to quantitative measurement of the In composition in GaN/InGaN multilayers (2003) (3)
Interaction between meta-materials and shallow donors in bulk GaN at THz frequency. (2014) (3)
Magneto-photoluminescence of AlGaN/GaN quantum wells (2001) (3)
High p-type GaN for advanced optoelectronic devices (2016) (3)
AlGaN/GaN HEMTs on Resistive Si(111) Substrate: From Material Assessment to RF Power Performances (2003) (3)
Light-emitting diode technology and applications: introduction (2017) (3)
AlInN/GaN HEMTs on SiC and on silicon with regrown ohmic contacts by selective ammonia MBE (2015) (3)
Erratum: “GaN evaporation in molecular beam epitaxy environment” [Appl. Phys. Lett. 74, 1854 (1999)] (1999) (3)
InAlN HEMTs - Design - Technology - Performance (2008) (3)
Erratum: Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response [Phys. Rev. B 86, 125308 (2012)] (2014) (3)
Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages (2008) (3)
Measurement of the tuneable absorption in GaN‐based multi‐section laser diodes (2011) (3)
Electric-field-induced impact ionization of excitons in GaN and GaN/AlGaN quantum wells (2001) (3)
High conductivity InAlN/GaN multi-channel two-dimensional electron gases (2021) (3)
Optical and structural properties of an Eu implanted gallium nitride quantum dots/aluminium nitride superlattice. (2010) (3)
High temperature stability of nitride-based power HEMTs (2010) (3)
InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300 K in the whole visible spectrum (2001) (3)
Photoluminescence properties of multiple stacked planes of GaN/AlN quantum dots studied by near‐field optical microscopy (2001) (3)
Growth kinetics of GaN in ammonia atmosphere (1999) (3)
SPIN ORIENTATION BY OPTICAL-PUMPING OF STRAINED IN0.35GA0.65AS/GAAS QUANTUM-WELLS GROWN ON VICINAL SUBSTRATES (1993) (3)
Photoconductance measurements and Stokes shift in InGaN alloys (2001) (3)
Potentialities of GaN‐Based Microcavities Grown on Silicon Substrates (2001) (3)
In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes (2002) (3)
A Concept for Diamond Overlayers on Nitride Heterostructures (2008) (3)
Thick nano-crystalline diamond overgrowth on InAlN/GaN devices for thermal management (2009) (3)
Microcavity Light Emitting Diodes Based on GaN membranes Grown by Molecular Beam Epitaxy on Silicon (2003) (2)
UV metal semiconductor metal detectors - A robust choice for (Al, Ga)N based detectors (2004) (2)
Towards electronics at 1000 °C (2011) (2)
Strain and compositional analyses of Al‐rich Al1–xInxN films grown by MOVPE: impact on the applicability of Vegard's rule (2008) (2)
Violet InGaN/GaN Light Emitting Diodes Grown by Molecular Beam Epitaxy Using NH3 (1998) (2)
OPTICAL-PUMPING IN STRAINED IN0.2GA0.8AS/GAAS QUANTUM-WELLS (1993) (2)
Nontrivial carrier recombination dynamics and optical properties of over‐excited GaN/AlN quantum dots (2004) (2)
Early stage degradation of InAlN/GaN HEMTs during electrical stress (2012) (2)
Indium segregation and misorientation effects on the optical properties of MBE grown In0.35Ga0.65As/GaAs quantum wells (1993) (2)
Modelling of absorption and emission spectra of InxGa1−xN layers grown by MBE (2001) (2)
Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers (2020) (2)
Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells (2016) (2)
Erratum: Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory [Phys. Rev. B 81, 125305 (2010)] (2011) (2)
Near-UV narrow bandwidth optical gain in lattice-matched III–nitride waveguides (2018) (2)
Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer (2020) (2)
Optical detection of 2DEG in GaN/AlGaN structures: High magnetic field studies (2004) (2)
GaN-based VCSELs (2015) (2)
Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells (2022) (2)
Room-Temperature Polariton Laser (2008) (2)
Superfluorescent emission in electrically pumped semiconductor laser (2013) (2)
Low loss EEL spectroscopy performed on InxAl1‐xN layers grown by MOVPE: comparison between experiment and ab‐initio calculations (2012) (2)
AlN-capped AlInN/GaN HEMTs with 4.5 W/mm Output Power at 40 GHz (2012) (2)
Solar Blind (Al,Ga)N Metal-Semiconductor-Metal Devices for High Performance Flame Detection (2003) (2)
Polariton relaxation and polariton nonlinearities in nonresonantly cw-pumped III-nitride slab waveguides (2020) (2)
Indium surface segregation in InGaN/GaN quantum wells (2002) (2)
Terrace length commensurability and surface reconstruction in highly strained InGaAs/GaAs quantum wells grown on vicinal substrates (1994) (2)
Growth of gallium nitride epitaxial layers and applications (2000) (2)
Excitonic States of GaN/AlGaN Quantum Well Structures under High Density of Excitation (2003) (1)
Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grown by molecular beam epitaxy (2001) (1)
Fermi-level pinning and intrinsic surface states of Al 1 2 x In x N ð 10 ! 10 Þ surfaces (2017) (1)
Surfactant-mediated molecular-beam epitaxy of highly-strained III-V semiconductor heterostructures (1994) (1)
Optical properties of GaN/AlN quantum boxes under high photo-excitation (2003) (1)
Spectroscopy of intraband electron confinement in self-assembled GaN/AlN quantum dots (2003) (1)
High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown on Bulk GaN, SiC, and Sapphire Substrates (2000) (1)
Optical and structural properties of AlGaN/GaN quantum wells grown by molecular beam epitaxy (1998) (1)
Novel Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Recombination Dynamics in GaN and GaN Based Heterostructures (2010) (1)
UV Metal Semiconductor Metal Detectors (2004) (1)
Plasmonic-polarization enhancement of novel GaN/AlN quantum cascade detector (2013) (1)
Correction to 205-GHz (Al,In)N/GaN HEMTs (2010) (1)
High performance solar blind detectors based on AlGaN grown by MBE and MOCVD (2003) (1)
Narrow Linewidth InGaN Laser Diodes Based on External Cavity Fiber Bragg Grating (2019) (1)
Molecular beam epitaxy of group-III nitrides (2002) (1)
GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer (2009) (1)
Recombination Dynamics in Nitride Quantum Boxes and Quantum Wells for Colors Ranging from the UV to the Red. (2000) (1)
Localization effects in GaN/AlGaN quantum well - Photoluminescence studies (2003) (1)
Assessing the Composition of Wide Bandgap Compound Semiconductors by Atom Probe Tomography: A Metrological Problem (2016) (1)
Origin of Below Band‐Gap Photoluminescence from GaN Quantum Dots in AlN Matrix (2005) (1)
AlInN/GaN quantum wells for intersubband transitions (2005) (1)
Residual donors in wurtzite GaN homoepitaxial layers and heterostructures (2003) (1)
Triggering of guiding and antiguiding effects in GaN-based VCSELs (2014) (1)
GaN L3 photonic crystal cavities with an average quality factor in excess of 16000 in the near infrared (2015) (1)
Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire (2003) (1)
Si and Mg Doped Gan Layers Grown by Gas Source Molecular Beam Epitaxy Using Ammonia (1997) (1)
Preface: Phys. Status Solidi C 6/S2 (2009) (1)
Lattice-Matched GaN-InAlN Waveguides at m Grown by Metal-Organic (2008) (1)
Group-III Nitride Quantum Heterostructures Emitting in the whole Visible Range (2000) (1)
GaN superluminescent diodes and their applications (2016) (1)
Lateral localization effects in strained InGaAs/GaAs semiconductor quantum wells grown on vicinal surfaces (1994) (1)
GaN/GaInN-based light emitting diodes grown by molecular beam epitaxy using NH3 (1999) (1)
On the effect of high Mg doping on the polarity of GaN (2001) (1)
Micro-photoluminescence of GaN quantum dots embedded in 100 nm wide cylindrical AlN pillars (2004) (1)
Microscopic Description of Radiative Recombinations in InGaN/GaN Quantum Systems (2002) (1)
Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces (2020) (1)
Correlation between Internal Electric Fields, Residual Strain and Optical Transitions in GaN/AlN Stacked Quantum Dots (2003) (1)
The Role of Internal Electric Fields in III--N Quantum Structure (2001) (1)
Control of the polarity of GaN epilayers using a Mg adsorption layer (2002) (1)
The growth of low-dimensional nitrides by molecular beam epitaxy (2002) (1)
Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress (2022) (1)
Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics (2022) (1)
Radiative lifetime in wurtzite GaN/AlN quantum dots. (2007) (1)
On the nature of light emission in polar GaN/(AlGa)N quantum wells. (2017) (0)
Indirect excitons in polar group III nitride quantum wells. (2016) (0)
Point defects and blue LED efficiency: the critical role of indium (2021) (0)
Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions (2020) (0)
Efficient second harmonic generation in a doubly resonant photonic crystal cavity based on a bound state in the continuum (2020) (0)
Fermi-level pinning and intrinsic surface states of surfaces (2017) (0)
Biexciton recombination in high quality GaN/AlGaN quantum wells (2008) (0)
Polariton lasing at room temperature (2013) (0)
Doubly Resonant Second Harmonic Generation in Photonic Crystal Cavities via Bound States in the Continuum (2020) (0)
AlInN based Microcavities (2006) (0)
Growth and characterization of AlInN/GaN field effect transistors (2007) (0)
PHASE DIAGRAM OF EXCITON-POLARITONS IN MULTIPLE QUANTUM WELL GaN-BASED MICROCAVITIES (2010) (0)
Towards purely radiative recombination at room-temperature in nonpolar AlGaN/GaN quantum wells (2013) (0)
Low-temperature picosecond time-resolved cathodoluminescence study of localization in a-plane GaN. (2009) (0)
Dipolar exciton fluids in (Al,Ga)N/GaN quantum wells (2013) (0)
Universal behavior of the pressure coefficient of the light absorption and emission in InGaN structures (2000) (0)
Al(In)N/GaN Heterostructures for Intersubband Transitions (2005) (0)
Luminescence and structural properties of InGaN epilayer, quantum well and quantum dot samples using synchrotron radiation (2000) (0)
High-mobility AlGaN/GaN two-dimensional electron gas grown on (111) single crystal diamond substrate (2009) (0)
Continuous-wave versus time-resolved photo-luminescence of GaN/AlN quantum dots. (2004) (0)
InAlN-based HEMT for microwave applications (2009) (0)
Impact of polarization fields on electrochemical lift-off of GaN membranes (2021) (0)
GaN/AlGaN multiple quantum wells grown on silicon substrates for UV light emitters (2003) (0)
Room temperature continuous wave blue lasing in high quality factor III-nitride nanobeam cavity on silicon (2015) (0)
Study and optimization of near UV InGaN/GaN based Light Emitting Diodes at low injection current regimes (2006) (0)
Modification of InGaN quantum well luminescence by microstructured buffer layers (2007) (0)
Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs (2010) (0)
Effect of applied bias voltage on the static and dynamic characteristics of self-pulsating multi-section InGaN-based laser diode (2012) (0)
Estimation of the surface potential of unstrained InAlN/GaN HEMT's (2007) (0)
Superfluorescent 1.1 ps pulse-on-demand generation in InGaN laser (2013) (0)
Detector of electromagnetic waves in quantum wells. (1992) (0)
Rutherford backscattering spectrometry, particle induced X-ray emission and atomic force microscopy of InAs thin films grown on GaAs: a complementary study (1996) (0)
High-Q gallium nitride photonic crystal cavities on silicon (Conference Presentation) (2019) (0)
Recent Improvements on InAlN / GaN MOS-HEMTs (2009) (0)
Stress Modulated Composition Fluctuation and Diffusion in near lattice match AlInN/GaN (2009) (0)
Characterization of a-plane GaN films grown on r-plane sapphire substrate by electron microscopy (2008) (0)
W-Band (90-100 GHz) Power Amplifiers Based on AlInN/GaN-on-Silicon HEMTs (2015) (0)
Room temperature polariton lasing and BEC in semiconductor microcavities (2008) (0)
Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in alane ( Al , Ga ) N / GaN Quantum (2011) (0)
Emission properties of basal stacking faults in a-plane gallium nitride (2008) (0)
Purely radiative recombinations and thermal carrier emission in nonpolar (Al,Ga)N/GaN quantum wells. (2012) (0)
How does an In-containing underlayer prevent the propagation of defects in InGaN QW LEDs? identification of SRH centers and modeling of trap profile (2021) (0)
Carrier Recombination Dynamics of Over-Excited Hexagonal GaN/AlN Quantum Dots. (2004) (0)
Improvements of High Performance 2‐nm‐thin InAlN/AlN Barrier Devices by Interface Engineering (2011) (0)
Symposium Y: GaN and Related Alloys (2004) (0)
WOCSDICE 2012 GaN / InAlN / AlN / GaN normally-off HEMT with etched access region (2012) (0)
Indium distribution inside quantum wells: The effect of growth interruption in MBE (2002) (0)
Exciton oscillator strength in GaN/AlGaN quantum wells (2002) (0)
Towards room temperature electrically pumped blue vertical cavity surface emitting lasers (2009) (0)
GaN and InGaN quantum dots grown by MBE: from UV to red light emission (2000) (0)
Carrier recombination dynamics and internal electric fields in GaN/AlN self-organized quantum dots. (2006) (0)
Indirect excitons in AlGaN/GaN polar quantum wells. (2016) (0)
Couche mince semi-conductrice de GaInN, son procédé de préparation, diode électroluminescente comprenant cette couche et dispositif d'éclairage = Thin semiconductor GaInN layer, method for preparing same, light-emitting diode comprising said layer and illumination device (2003) (0)
Impact of point defects on Auger recombination in InGaN/GaN quantum well in the efficiency droop regime (2021) (0)
Biexciton-Assisted Relaxation Mechanisms In III-Nitride Based Multi-Quantum Well Microcavities. (2011) (0)
Physics and optical properties of GaN/AlGaN quantum wells (2002) (0)
Room temperature single photon emission from planar GaN/AlN quantum dot samples grown by MBE (2019) (0)
Dynamics of cavity biexcitons in III-Nitride based multi quantum well Microcavities (2011) (0)
Growth of device-quality ZnO films by pulsed-laser deposition (2008) (0)
Intersubband Transitions in Nitride Based Quantum Wells (2005) (0)
In distribution in InGaN quantum wells: influence of phase separation, In segregation and In desorption (2003) (0)
Recombination dynamics in high energy (>3.5 eV) GaNAlN quantum dots: influence of lateral confinement, electric field and the dark-level trapping (2022) (0)
Growth of ultra-thin AlAs layers on GaAs (001) vicinal surfaces: a search for lateral confinement (1993) (0)
Phase and Spin Relaxation Dynamics in High-Quality Single GaN/AlGaN Quantum Well (2015) (0)
LASERS, OPTICS, AND OPTOELECTRONICS 111101 Strongly coupled single quantum dot in a photonic crystal waveguide cavity (3 pages) (2010) (0)
Mapping Polarization Fields in Al0.85In0.15N/AlN/GaN Heterostructures (2009) (0)
Radiative Recombination Governed Lifetimes In Non-polar (Al,Ga)N/GaN Quantum Wells Grown On Bulk GaN Crystals. (2011) (0)
High detectivity solar blind AlGaN metal-semiconductor-metal detector (2001) (0)
Carrier recombination dynamics in GaN/AlN quantum dots. (2004) (0)
Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Wells. (2014) (0)
Neutral donor bound excitons studied by selective photoluminescence in wurtzite GaN (2001) (0)
Phonons and holes in magnesium doped GaN (1998) (0)
Exciton dynamics in a-plane (Al,Ga)N/GaN single quantum wells grown by molecular beam epitaxy on ELO-GaN. (2010) (0)
Engineering the transverse optical guiding in GaN-based VCSELs to avoid detrimental optical loss (2012) (0)
Purely radiative exciton recombination in (Al,Ga)N/GaN quantum wells grown on the a-facet of GaN crystals. (2012) (0)
A Concept forDiamondOverlayers onNitride Heterostructures (2008) (0)
thick layer of gallium nitride or mixed nitride of gallium and other metal, preparation method, and electronic or optoelectronic device comprising such a layer (2000) (0)
Lasing threshold doubling at the crossover from strong to weak coupling regime in GaAs microcavity (2012) (0)
Convergence of microscopy techniques for nanoscale structural characterization: an illustration with the study of AlInN (2008) (0)
Exciton Localization On Basal Stacking Faults In A-Plane GaN Probed By Picosecond Time-Resolved Cathodoluminescence (2009) (0)
Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots (2022) (0)
Fabrication and characterization of integrated photonics structures on GaN-Based photonic crystal membranes grown on silicon (2015) (0)
Ultrahigh-Speed AlInN/GaN HEMTs on SiC (2010) (0)
Fabrication defects and grating couplers in III-nitride photonic crystal nanobeam lasers (Conference Presentation) (2016) (0)
III-nitride intersubband photonics (2012) (0)
Passive and hybrid mode-locking from a monolithic InGaN/GaN laser diode (2013) (0)
Thresholdless Lasing of Nitride Nanobeam Cavities (2016) (0)
Surface capping of AlInN/GaN HEMT structures (2006) (0)
Direct observation of biexciton localization dynamics in (Al,Ga)N/GaN multi quantum wells. (2011) (0)
HL 83: Focus Session: III-Nitride Heterostructures for Optoelectronics-Polarization Reduction, Green Gap and High In-containing Alloys (2012) (0)
The Impact of Porosification upon Luminescence of HVPE Grown GaN and the Influence of the Porous Layer upon the Quality of the Overgrown GaN Film (2016) (0)
Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in α-Plane (Al,Ga)N/GaN Quantum Wells (2011) (0)
Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in GaN and GaN based heterostructures (2011) (0)
Optical pumping in In0.35Ga0.65As/GaAs heterostructures obtained by molecular beam epitaxy at 400°C (1995) (0)
Occurrence of ‘Accidental’ inn Quantum Dots in Indium Gallium Nitride/Gallium Nitride Heterostructures (2002) (0)
Room-temperature blue-emitting high-beta gallium nitride nanobeam cavity lasers (2017) (0)
Radiative lifetimes of localized and free excitons in homoepitaxial non-polar (Al,Ga)N/GaN single quantum well. (2010) (0)
Piezoelectric Field and its Influence on the Pressure Behavior of the Light Emission from InGaN/GaN and GaN/AlGaN Quantum Wells (2001) (0)
Thresholdless lasing of nitride nanobeam cavities on silicon (2016) (0)
Indirect Excitons in Group III-Nitride-Based Quantum Wells. (2018) (0)
Influence of high excitation on excitonic states in GaN/AlGaN quantum wells (2002) (0)
Indirect excitons in polar GaN/(AlGa)N quantum wells (2017) (0)
Indirect excitons in wide band gap semiconductors. (2015) (0)
Homogeneous versus inhomogeneous broadening of the photoluminescence in polar GaN/(AlGa)N quantum wells. (2017) (0)
THIN LAYER OF SEMICONDUCTOR GaInN, METHOD OF PREPARATION; LED INCLUDING THE LAYER AND ILLUMINATION DEVICE INCLUDING THE DEL (2000) (0)
Thin Solid Films, E-MRS, Strasbourg/France 1999 (2000) (0)
Study of compressive strength of composites (2000) (0)
A quantum optical study of thresholdless lasing features in high-β nitride nanobeam cavities (2018) (0)
Exciton relaxation and recombination mechanisms in a-plane GaN probed by time-resolved cathodoluminescence. (2010) (0)
Effects of the annealing temperature on the structural and electronic properties of MBE grown InGaN/GaN quantum wells (2011) (0)
Burying surface defects in InGaN underlayer to increase blue LED efficiency (Conference Presentation) (2019) (0)
III-N optoelectronic devices: understanding the physics of electro-optical degradation (2023) (0)
Spin and phase relaxation dynamics in GaN and GaN/AlGaN quantum wells (Presentation Recording) (2015) (0)
Erratum: “Strong electric field and nonuniformity effects in GaN∕AlN quantum dots revealed by high pressure studies” [Appl. Phys. Lett. 89, 051902 (2006)] (2006) (0)
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics (2022) (0)
III-nitride High Brightness light-emitting diodes (2009) (0)
Optical properties of V-pits in GaN through temperature-dependent picosecond Time-Resolved Cathodolminescence (pTRCL) (2009) (0)
Deposited in DRO : 04 April 2014 Version of attached le : Published Version Peer-review status of attached le : (2014) (0)
7b.1 High-Speed AlInN/GaN HEMTs on SiC and (111) HR-Si (2011) (0)
POLARIZATION BEHAVIOR ABOVE THE POLARITON CONDENSATION THRESHOLD IN A GaN-BASED MULTIPLE QUANTUM WELL MICROCAVITY (2010) (0)
Demonstration of continuous-wave second and third harmonic generation in high-Q gallium nitride photonic crystal cavities (2017) (0)
PROCEDE DE PREPARATION D'UNE COUCHE MINCE SEMI-CONDUCTRICE DE GaInN (2001) (0)
Toward Quantum Fluids at Room Temperature: Polariton Condensation in III-Nitride Based Microcavities (2013) (0)
Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions (1997) (0)
Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Well Structures Grown on Sapphire and GaN Substrates. (2015) (0)
Efficient harmonic generation in high-Q gallium nitride photonic crystal cavities on silicon (2017) (0)
Vacuum-field Rabi splitting at SWIR in photocurrent of quantum cascade infrared photodetectors coupled to metamaterial nano-antennas (2017) (0)
Investigation of AlInN/GaN heterostructures by scanning Tunneling and Transmission electron microscopy (2016) (0)
Effect of V/III ratio on the properties of GaN layers grown by molecular beam epitaxy using NH3 (1998) (0)
Radiative Recombination Limited Lifetimes in a-plane (Al,Ga)N/GaN single quantum wells grown on GaN. (2010) (0)

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