Oleg Tolbanov
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Russian physicist
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Physics
Oleg Tolbanov's Degrees
- Bachelors Physics Moscow State University
- Masters Physics Moscow State University
- PhD Physics Moscow State University
Why Is Oleg Tolbanov Influential?
(Suggest an Edit or Addition)According to Wikipedia, Oleg Petrovich Tolbanov is a Russian physicist, specialist in solid state physics, solid-state electronics and physical materials science. He is the author of more than 160 scientific articles in the Web of Science database , including: monographs, 5 textbooks, more than 60 inventions.
Oleg Tolbanov's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Conceptual design report for the LUXE experiment (2021) (88)
- GaAs radiation imaging detectors with an active layer thickness up to 1 mm (2003) (63)
- Chromium compensated gallium arsenide detectors for X-ray and γ-ray spectroscopic imaging (2014) (61)
- Performance of a Medipix3RX Spectroscopic Pixel Detector With a High Resistivity Gallium Arsenide Sensor (2015) (53)
- GaSe1−xSx and GaSe1−xTex thick crystals for broadband terahertz pulses generation (2011) (46)
- Characterisation of a GaAs(Cr) Medipix2 hybrid pixel detector (2011) (39)
- Technical Progress Report for: PANDA. Strong Interaction Studies with Antiproton (2005) (33)
- Investigation of the radiation hardness of GaAs sensors in an electron beam (2012) (32)
- Characterization of photon counting pixel detectors based on semi-insulating GaAs sensor material (2013) (28)
- The LAMBDA photon-counting pixel detector and high-Z sensor development (2014) (27)
- Chromium-compensated GaAs detector material and sensors (2014) (22)
- Investigation of GaAs:Cr Timepix assemblies under high flux irradiation (2015) (21)
- Letter of Intent for: PANDA. Strong Interaction Studies with Antiprotons (2004) (21)
- Investigating the suitability of GaAs:Cr material for high flux X-ray imaging (2014) (18)
- Terahertz dielectric properties of multiwalled carbon nanotube/polyethylene composites (2017) (18)
- Exploration of GaAs structures with π-ν junction for coordinate sensitive detectors (1994) (17)
- GaAs X-ray coordinate detectors (2001) (16)
- Semiconductor materials for x-ray detectors (2017) (16)
- An exploration of GaAs structures for solid-state detectors (1993) (15)
- Low‐temperature transport of charge carriers in InGaN/GaN multiple quantum well light‐emitting diodes (2015) (15)
- Strong interaction studies with antiprotons. Letter of intent for PANDA (Antiproton Annihilations at Darmstadt) (2004) (14)
- GaAs as a material for particle detectors (2002) (13)
- Characterisation of GaAs:Cr pixel sensors coupled to Timepix chips in view of synchrotron applications (2017) (13)
- Broadband and narrowband terahertz generation and detection in GaSe1−xSx crystals (2017) (13)
- Modeling of processes of charge division and collection in GaAs detectors taking into account trapping effects (2001) (12)
- The Mechanism of Superfast Switching of Avalanche ${S}$ -Diodes Based on GaAs Doped With Cr and Fe (2018) (12)
- Photoelectrical characteristics of TiO2-Si heterostructures (2016) (11)
- Characterization of Chromium Compensated GaAs Sensors with the Charge-Integrating JUNGFRAU Readout Chip by Means of a Highly Collimated Pencil Beam (2021) (11)
- Electron mobility-lifetime and resistivity mapping of GaAs:Cr wafers (2017) (11)
- Characterization of GaAs:Cr sensors using the charge-integrating JUNGFRAU readout chip (2019) (11)
- Radiation resistance of GaAs structures based on pi - nu junctions (1995) (11)
- Epitaxial structures based on compensated GaAs for γ- and X-ray detectors (2001) (11)
- The effect of annealing on the properties of Ga2O3 anodic films (2012) (10)
- GaAs structures with deep centres for ionizing radiation detection (1997) (9)
- Temperature dependencies of current-voltage characteristics of GaAs:Cr (2016) (7)
- GaAs radiation imaging detectors for nondestructive testing, medical, and biological applications (2005) (7)
- Current limitation in A3B5 nitride light-emitting diodes under forward bias (2012) (7)
- MHz rate X-Ray imaging with GaAs:Cr sensors using the LPD detector system (2017) (6)
- Electronic properties and influence of doping on GaSe crystal nonlinear optical parameters for the applications in terahertz range (2010) (6)
- Production and properties of nanostructured composite films containing silica and d-metal oxides (Mn, Fe, Co, Ni) (2012) (6)
- Charge Carrier Transport and Deep Levels Recharge in Avalanche S-Diodes Based on GaAs (2018) (6)
- Photoluminescence and terahertz generation in InGaN/GaN multiple quantum well light‐emitting diode heterostructures under laser excitation (2015) (6)
- GaSe1−xSx and GaSe1−xTe x solid solutions for terahertz generation and detection (2009) (6)
- Selective Sensors of Nitrogen Dioxide Based on Thin Tungsten Oxide Films under Optical Irradiation (2019) (5)
- Gallium-oxide films obtained by thermal evaporation (2013) (5)
- Photon counting microstrip X-ray detectors with GaAs sensors (2018) (5)
- Feasibility study of a ``4H'' X-ray camera based on GaAs:Cr sensor (2016) (5)
- Charge collection in X-ray pixel detectors based on semi-insulating GaAs doped with Cr (2002) (4)
- Radiation hardness of GaAs: Cr and Si sensors irradiated by electron beam (2020) (4)
- Charge collection in X-ray pixel detectors based on SI-GaAs doped with Cr (2003) (4)
- A Matrix Gallium-Arsenide Detector for Roentgenography (2013) (4)
- Radiation resistance of GaAs structures (1997) (4)
- Aluminum Nitride Doped with Transition Metal Group Atoms as a Material for Spintronics (2021) (4)
- GaAs:Cr X-ray sensors noise characteristics investigation by means of amplitude spectrum analysis (2018) (4)
- Space charge formation in chromium compensated GaAs radiation detectors (2020) (4)
- Ionizing-radiation detectors based on GaAs with deep centers (2000) (3)
- Characterization of charge collection in various semiconductor sensors with energetic protons and Timepix device (2011) (3)
- X-ray microbeam characterisation of crystalline defects in small pixel GaAs:Cr detectors (2021) (3)
- Charge transport in detectors on the basis of gallium arsenide compensated with chromium (2007) (3)
- Optical Pump–Terahertz Probe Study of HR GaAs:Cr and SI GaAs:EL2 Structures with Long Charge Carrier Lifetimes (2021) (3)
- Characterisation of the HEXITEC4S X-ray spectroscopic imaging detector incorporating through-silicon via (TSV) technology (2021) (3)
- Radiation hardness of semiconductor detectors for high-energy physics (1996) (3)
- Development of radiation medicine at DLNP, JINR (2011) (3)
- Investigation of epitaxial GaAs charged particle detectors (1999) (3)
- Characterization of 4 inch GaAs:Cr wafers (2017) (3)
- Semiconducting structures and devices based on gallium arsenide with deep centers (1992) (3)
- Transmission Spectra and Generation of Terahertz Pulses in SiO2-GaSe, TiO2-GaSe, Ga2O3-GaSe, and GaSe:S Structures (2015) (3)
- X-ray based methods for 3D characterization of charge collection and homogeneity of sensors with the use of Timepix chip (2011) (3)
- Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering (2018) (3)
- Luminescence of thin-film light-emitting diode structures upon excitation by a high-current electron beam (2013) (3)
- The influence of contact material and its fabrication on X-ray HR-GaAs:Cr sensor noise characteristics (2019) (2)
- Response to “Comment on ‘GaSe1−xSx and GaSe1−xTex thick crystals for broadband terahertz pulses generation’” [Appl. Phys. Lett. 100, 136103 (2012)] (2012) (2)
- Gallium arsenide avalanche-type S-diode based on a n+-π-ν-n structure (1986) (2)
- Properties of TiO2 films on silicon substrate (2014) (2)
- The detected block for systems of nondestroying testing based on the GaAs detectors (2005) (2)
- Response of HR-GaAs:Cr sensors to subnanosecond X- and β-ray pulses (2019) (2)
- Investigation of thick GaAs:Cr pixel sensors for X-ray imaging applications (2021) (2)
- Electrical, Structural, and Magnetic Properties of Gallium Arsenide Doped with Iron (2018) (2)
- Transport and charge collection in compensated GaAs particle detectors (1996) (2)
- The impact of active area geometry and electrophysical characteristics on X-ray sensitivity and spatial resolution of GaAs:Cr radiation sensors (2013) (2)
- Terahertz generation in GaSe0.71S0.29 and GaSe crystals via eee- and eoo-type optical rectification (2012) (2)
- Barrier-height measurement for a gallium arsenide metal-semi-insulator interface (2007) (2)
- Influence of temperature on the energy resolution of sensors based on HR GaAs:Cr (2021) (1)
- Measurement of the radiation environment of the ATLAS cavern in 2017–2018 with ATLAS-GaAsPix detectors (2021) (1)
- Proton-induced displacement damage in GaAs and radiation-hardness of semiconductor detectors for high energy physics (1997) (1)
- Modeling of processes of charge separation in a GaAs detector (2002) (1)
- The research of characteristics of multichannel GaAs detectors (2011) (1)
- Detailed analysis of quasi-ohmic contacts to high resistive GaAs:Cr structures (2019) (1)
- Gallium arsenide structures with deep centers and ionized radiation detectors based on them (1998) (1)
- Switching delay of avalanche S-diodes in circuit with optical drive (2011) (1)
- Evaluation of suitability of GaAs:Cr sensors for X-ray transmission technology of diamond-bearing ore enrichment (2016) (1)
- Conduction mechanism of metal-TiO2-Si structures (2015) (1)
- Fabrication and Investigation of Indium Nitride Possessing Ferromagnetic Properties (2018) (1)
- Conductivity of Ga2O3–GaAs Heterojunctions (2018) (1)
- Dependence of X-ray sensitivity of GaAs:Cr sensors on material of contacts (2015) (1)
- Analysis of free-carrier charges distribution in the n-GaAs monocrystals used at formation of the high-resistance material for the ionizing radiation sensors (2005) (1)
- Detector structures based on epitaxial gallium arsenide compensated by chromium (2005) (1)
- The Measurement of Charge Carrier Lifetime in SIGaAs: Cr and EL2-GaAs by Pump-Probe Terahertz Spectroscopy (2020) (1)
- The formation of amplitude spectra in X-ray pixel detectors made of gallium arsenide. (2017) (1)
- Scanned Multiple (Electro-)Chemical Sensors Located at Critical Infrastructures (2006) (0)
- Conduction in titanium dioxide films and metal–TiO2–Si structures (2016) (0)
- Effect of thermal annealing and exposure to oxygen plasma on the properties of TiO2-Si structures (2014) (0)
- Effect of annealing in argon on the properties of thermally deposited gallium-oxide films (2013) (0)
- Properties of TiO2 films on silicon substrate (2014) (0)
- Spectral X-ray Detectors Based on Multi-Element Chromium Compensated Gallium Arsenide Sensors and Application Specific Integrated Circuits: : Keynote Paper Devoted 75th Anniversary of the Transistor (2022) (0)
- Manufacturing and Properties of Ferromagnetic Aluminum Nitride Doped with Nonmagnetic Impurities (2022) (0)
- SEMICONDUCTOR STRUCTURES, LOWDIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA (2013) (0)
- SEMICONDUCTOR STRUCTURES, LOWDIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA Electrical Characteristics of nGaAs-Anode Film-Ga 2 O 3 -Metal Structures (2012) (0)
- Efficient terahertz generation in GaSe via eee-interaction type (2011) (0)
- Mechanism of high-speed switching in gallium arsenide structures with deep centers (1992) (0)
- GaAs:Cr X-ray pixel detectors (2011) (0)
- Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells (2013) (0)
- ATOMIC STRUCTURE AND NONELECTRONIC PROPERTTIES OF SEMICONDUCTORS A Study of the Process of Decomposition of Supersaturated GaAs:Fe Solid Solution by Scanning Probe Microscopy (2010) (0)
- Study of particularities for metal contact formation to the semiconductor high-resistance GaAs:Cr (2005) (0)
- Optical Pump — THz Probe Study of SI-GaAs:Cr with Long Charge Carrier Lifetime (2019) (0)
- Dipole radiators and receivers of terahertz radiation detectors based on GaAs, doped with Cr (2011) (0)
- Laser Und XFEL Experiment ( LUXE ) Probing Strong Field QED Conceptual Design Report for the LUXE Experiment (2021) (0)
- Charge Carrier Transport and Deep Levels Recharge in Avalanche S-Diodes Based on GaAs (2018) (0)
- Prospects for Application of Gallium Arsenide Doped with Transition Metals as a Material for Spintronics (2018) (0)
- Current limitation in A3B5 nitride light-emitting diodes under forward bias (2012) (0)
- Single-wall carbon nanotubes oriented by gas flow at synthesis by aerosol CVD method as terahertz polarizers (2016) (0)
- 3. EFFECT OF TREATMENT CONDITIONS ON THE STRUCTURE AND MORPHOLOGY OF ANODIC GALLIUM ARSENIDE FILMS (2012) (0)
- Registration of Short Impulses of X-Ray Radiation Using the Detecting Block Based on GaAs Detectors (2007) (0)
- Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide (2016) (0)
- TheUndestroying Quality Monitoring MethodfortheGaAsDetector Structures (2007) (0)
- Conductivity of Ga2O3–GaAs Heterojunctions (2018) (0)
- A Solid-State Sub-Nanosecond Microwave Switch (2016) (0)
- Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering (2018) (0)
- ON GALLIUM ARSENIDE WITH DEEP CENTERS (1993) (0)
- Electrical, Structural, and Magnetic Properties of Gallium Arsenide Doped with Iron (2018) (0)
- Dipole antennas based on SI-GaAs:Cr for generation and detection of terahertz radiation (2013) (0)
- A study of GaAs structures with built-in π-ν junctions used for making position-sensitive detectors (1994) (0)
- Luminescence of Ga2O3 Crystals Excited with a Runaway Electron Beam (2017) (0)
- Deep centers in TiO2-Si structures (2015) (0)
- Generation of Terahertz Radiation in LED Heterostructures with Multiple InGaN/GaN Quantum Wells at Two-Photon Excitation by Femtosecond (2015) (0)
- Modeling of characteristics of ionizing radiation detector based on AlGaAs–GaAs heterostructure (2002) (0)
- Formation of Dislocations in the Process of Impurity Diffusion in GaAs (2021) (0)
- Investigation of sensitivity and pulse characteristics of detectors based on GaAs, compensated with chromium, exposed to X-ray (2011) (0)
- The fractional composition calculation of two-component mixtures using direct and scattered X-rays: a new methodology testing (2023) (0)
- Physical properties of indium nitride, impurities, and defects (2014) (0)
- Effect of Heat Treatment on Electrical Properties and Charge Collection Efficiency of X-Ray Sensors Based on Chrome-Compensated Gallium Arsenide (2016) (0)
- Subnanosecond Optoelectronic Switch (2007) (0)
- Properties of metall-TiO2-Si structures on an alternating signal (2015) (0)
- THz waveguide with a spit ring resonators layer (2014) (0)
- Luminescence of thin-film light-emitting diode structures upon excitation by a high-current electron beam (2013) (0)
- A Matrix Gallium-Arsenide Detector for Roentgenography (2013) (0)
- Gallium arsenide avalanche-type S-diode based on a n/sup +/-. pi. -nu-n structure (1986) (0)
- Electrical characteristics of n-GaAs-anode film-Ga2O3-metal structures (2012) (0)
- Analysis ofFree-Carrier Charges Distribution inthen-GaAsMonocrystals UsedatFormation oftheHigh-Resistance Material fortheIonizing Radiation Sensors (2005) (0)
- A study of possibilities of development of GaAs detectors for high-power nanosecond X-ray pulses (2008) (0)
- Detectors for the X-ray testing systems (2005) (0)
- The Detecting Modules for Mammography (2007) (0)
- The Undestroying Quality Monitoring Method for the GaAs Detector Structures (2007) (0)
- Terahertz emission from InGaN/GaN multiple quantum well light-emitting diode heterostructures under two-photon excitation (2014) (0)
- The Barrier Height Measurement at the Boundary of Metal Semi-Insulating Gallium Arsenide (2007) (0)
- Fabrication and Investigation of Indium Nitride Possessing Ferromagnetic Properties (2018) (0)
- Formation of Dislocations in the Process of Impurity Diffusion in GaAs (2022) (0)
- Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO2–Si structures (2016) (0)
- Transmission Spectra and Generation of Terahertz Pulses in SiO2-GaSe, TiO2-GaSe, Ga2O3-GaSe, and GaSe:S Structures (2015) (0)
- High-spatial resolution measurements with a GaAs:Cr sensor using the charge integrating MÖNCH detector with a pixel pitch of 25 μm (2022) (0)
- Gallium-oxide films obtained by thermal evaporation (2013) (0)
- Gallium arsenide structures sensitive to ultraviolet radiation (1995) (0)
- Aluminum Nitride Doped with Transition Metal Group Atoms as a Material for Spintronics (2021) (0)
- M1A01.0165 High-Efficiency Terahertz Generation in Hydrogen-Bonded Organic Nonlinear Optical Crystals (Invited) (2009) (0)
- Gas Analyzing System Based on Semiconductor Sensors for Providing Safety of Oil and Gas Pipeline Operations ; Strategic Insights, v. 7 issue 1 (February 2008) (2008) (0)
- 2 0 1 5 J I N S T 1 0 C 0 1 0 2 0 (2015) (0)
- Influence of Split-Ring Resonators on the Terahertz Transmission of a Planar Waveguide (2015) (0)
- Evaluation of chromium concentration in high-resistive GaAs:Cr produced by diffusion (2011) (0)
- X-ray Sensors Based on Chromium Compensated Gallium Arsenide (HR GaAs:Cr) (2019) (0)
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