Oliver Ambacher
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Materials Science
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Applied Physics
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Engineering Physics
Oliver Ambacher's Degrees
- PhD Electrical and Computer Engineering University of California, Santa Barbara
- Masters Electrical and Computer Engineering University of California, Santa Barbara
- Bachelors Electrical and Computer Engineering University of California, Santa Barbara
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(Suggest an Edit or Addition)Oliver Ambacher's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures (1999) (2327)
- Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures (2000) (1391)
- Growth and applications of Group III-nitrides (1998) (1302)
- Wireless sub-THz communication system with high data rate (2013) (1034)
- Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures (2002) (943)
- Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures (2002) (742)
- Optical constants of epitaxial AlGaN films and their temperature dependence (1997) (538)
- Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry (1998) (475)
- Undoped AlGaN/GaN HEMTs for microwave power amplification (2001) (356)
- Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3 (2009) (324)
- Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications (2007) (321)
- Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films (1997) (276)
- Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff (1999) (266)
- Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition (1996) (264)
- Sound velocity of AlxGa1−xN thin films obtained by surface acoustic-wave measurements (1998) (244)
- Effects of solvent and annealing on the improved performance of solar cells based on poly(3-hexylthiophene): Fullerene (2005) (238)
- Relation between absorption and crystallinity of poly(3-hexylthiophene)/fullerene films for plastic solar cells (2006) (210)
- Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films (1996) (196)
- Hydrogen response mechanism of Pt-GaN Schottky diodes (2002) (192)
- The Mn3+/2+ acceptor level in group III nitrides (2002) (187)
- Playing with Polarity (2001) (180)
- Gas sensitive GaN/AlGaN-heterostructures (2002) (178)
- Piezoelectric properties of polycrystalline AlN thin films for MEMS application (2006) (164)
- Optical Process for Liftoff of Group III-Nitride Films (1997) (160)
- GaN-based heterostructures for sensor applications (2002) (160)
- Influence of crystal polarity on the properties of Pt/GaN Schottky diodes (2000) (159)
- Electron affinity of AlxGa1−xN(0001) surfaces (2001) (159)
- Comparison of normal and inverse poly(3-hexylthiophene)/fullerene solar cell architectures (2005) (155)
- Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire (2000) (152)
- Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices (1999) (131)
- Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures – Part B: Sensor applications (2003) (131)
- Group-III-Nitride Based Gas Sensing Devices (2001) (128)
- High-electron-mobility AlGaN/GaN transistors (HEMTs) for fluid monitoring applications (2001) (126)
- Optical patterning of GaN films (1996) (124)
- Sub-bandgap absorption of gallium nitride determined by Photothermal Deflection Spectroscopy (1996) (115)
- Phase Stabilization and Phonon Properties of Single Crystalline Rhombohedral Indium Oxide (2008) (111)
- Nanoelectromechanical devices for sensing applications (2007) (104)
- DX-behavior of Si in AlN (2000) (102)
- Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures (2003) (98)
- Energy gap and optical properties of InxGa1–xN (2003) (92)
- Raman spectra of isotopic GaN (1997) (89)
- AlN/diamond heterojunction diodes (2003) (88)
- Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy (2003) (88)
- AlGaN/GaN heterostructures on insulating AlGaN nucleation layers (1999) (85)
- 35 nm metamorphic HEMT MMIC technology (2008) (85)
- Group III-nitride-based gas sensors for combustion monitoring (2002) (82)
- Piezoresponse force microscopy for polarity imaging of GaN (2002) (80)
- Phase selective growth and properties of rhombohedral and cubic indium oxide (2006) (79)
- GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates (2000) (77)
- AlGaN/GaN biosensor—effect of device processing steps on the surface properties and biocompatibility (2007) (77)
- Growth of cubic InN on r-plane sapphire (2003) (77)
- Freestanding GaN-substrates and devices (2003) (76)
- 100 Gbit/s wireless link with mm-wave photonics (2013) (76)
- ${W}$ -Band Time-Domain Multiplexing FMCW MIMO Radar for Far-Field 3-D Imaging (2017) (75)
- Evidence of electron accumulation at nonpolar surfaces of InN nanocolumns (2007) (75)
- Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers (2006) (75)
- Integration of In2O3 nanoparticle based ozone sensors with GaInN∕GaN light emitting diodes (2007) (73)
- Determination of small-signal parameters of GaN-based HEMTs (2000) (71)
- High electron mobility AlGaN/GaN heterostructure on (111) Si (2000) (70)
- Pt/GaN schottky diodes for hydrogen gas sensors (2006) (68)
- Structural and optical properties of Si-doped GaN (2000) (64)
- Determination of the composition of InxGa1−xN from strain measurements (2009) (63)
- Metamorphic HEMT technology for low-noise applications (2009) (63)
- Detonations of Gallium Azides: A Simple Route to Hexagonal GaN Nanocrystals (1998) (61)
- Detailed analysis of the dielectric function for wurtzite InN and In‐rich InAlN alloys (2006) (61)
- Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation (2009) (60)
- Raman study of the optical phonons in AlxGa1−xN alloys (1997) (60)
- Determination of the graphene–graphite ratio of graphene powder by Raman 2D band symmetry analysis (2019) (60)
- Anisotropy of the dielectric function for wurtzite InN (2004) (59)
- NOx sensing properties of In2O3 nanoparticles prepared by metal organic chemical vapor deposition (2008) (58)
- Absorption and crystallinity of poly(3-hexylthiophene)/fullerene blends in dependence on annealing temperature (2006) (58)
- Negative electron affinity of cesiated p-GaN(0001) surfaces (1998) (58)
- Photon stimulated sensor based on indium oxide nanoparticles I: Wide-concentration-range ozone monitoring in air (2011) (57)
- Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures (2001) (57)
- Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high-electron mobility transistors (2000) (57)
- Dielectric function and Van Hove singularities for In-rich In x Ga 1 − x N alloys: Comparison of N- and metal-face materials (2007) (55)
- Nanomechanics of single crystalline tungsten nanowires (2008) (55)
- Elastic modulus and coefficient of thermal expansion of piezoelectric Al1−xScxN (up to x = 0.41) thin films (2018) (55)
- Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN (2002) (55)
- Rotational viscosity in ferrofluids (1992) (54)
- Piezoresistivity of AlxGa1−xN layers and AlxGa1−xN/GaN heterostructures (2001) (54)
- A 300 GHz mHEMT amplifier module (2009) (53)
- 35 nm mHEMT Technology for THz and ultra low noise applications (2013) (52)
- Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz (2011) (52)
- Characterization of InGaN thin films using high-resolution x-ray diffraction (2000) (52)
- NOx sensing properties of In2O3 thin films grown by MOCVD (2008) (51)
- Model for the thickness dependence of electron concentration in InN films (2006) (51)
- Vertical transport in group III‐nitride heterostructures and application in AlN/GaN resonant tunneling diodes (2004) (50)
- Properties and applications of MBE grown AlGaN (1997) (49)
- High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy (1999) (49)
- GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE (2010) (48)
- Spin resonance investigations of Mn2+ in wurtzite GaN and AIN films (2003) (48)
- Wetting Behaviour of GaN Surfaces with Ga‐ or N‐Face Polarity (2001) (48)
- Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network (2006) (47)
- The polarization-induced electron gas in a heterostructure (2000) (47)
- Dielectric function of hexagonal AlN films determined by spectroscopic ellipsometry in the vacuum-uv spectral range (1999) (47)
- Spectroscopic ellipsometry measurements of AlxGa1−xN in the energy range 3–25 eV (1998) (46)
- Appropriate salt concentration of nanodiamond colloids for electrostatic self-assembly seeding of monosized individual diamond nanoparticles on silicon dioxide surfaces. (2015) (46)
- Experimental determination of the electro-acoustic properties of thin film AlScN using surface acoustic wave resonators (2019) (46)
- Hydrogen in Gallium Nitride Grown by MOCVD (1997) (45)
- Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films (2013) (45)
- Transmission of an 8-PSK modulated 30 Gbit/s signal using an MMIC-based 240 GHz wireless link (2013) (45)
- TRIAZIDOGALLIUM AND DERIVATIVES : NEW PRECURSORS TO THIN FILMS AND NANOPARTICLES OF GAN (1996) (43)
- Anisotropy of the momentum matrix element, dichroism, and conduction-band dispersion relation of wurtzite semiconductors (2008) (43)
- Electrochemical generation of hydrogenated graphene flakes (2015) (42)
- Thermopower investigation of n- and p-type GaN (1998) (42)
- Micro‐ and nano‐electromechanical resonators based on SiC and group III‐nitrides for sensor applications (2011) (41)
- Structural and optical properties of both pure poly (3-octylthiophene) (P3OT) and P3OT/fullerene films (2003) (41)
- Surface band bending at nominally undoped and Mg‐doped InN by Auger Electron Spectroscopy (2006) (41)
- Photoluminescence study of excitons in homoepitaxial GaN (2001) (41)
- Nanotechnology for SAW devices on AlN epilayers (2002) (41)
- Conduction-band dispersion relation and electron effective mass in III-V and II-VI zinc-blende semiconductors (2007) (41)
- A 600 GHz low-noise amplifier module (2014) (40)
- Absorption of InGaN Single Quantum Wells Determined by Photothermal Deflection Spectroscopy (1998) (40)
- Strain- and pressure-dependent RF response of microelectromechanical resonators for sensing applications (2007) (39)
- Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures (2003) (39)
- Polarity determination of a GaN thin film on sapphire (0001) with x-ray standing waves (1998) (38)
- g values of effective mass donors in Al x Ga 1 − x N alloys (2001) (38)
- Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators (2008) (38)
- Metal‐Organic Chemical Vapor Deposition of Aluminum Scandium Nitride (2019) (38)
- Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures (2009) (37)
- Pulsed mode operation of strained microelectromechanical resonators in air (2006) (37)
- Morphology and surface electronic structure of MBE grown InN (2007) (37)
- A subharmonic chipset for gigabit communication around 240 GHz (2012) (36)
- The role of Si as surfactant and donor in molecular-beam epitaxy of AlN (2005) (36)
- A 300 GHz active frequency-doubler and integrated resistive mixer MMIC (2009) (35)
- Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures (2003) (35)
- Optical constants and band gap of wurtzite Al1−xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x = 0.41 (2019) (35)
- Mechanism of Cluster Formation in a Clean Silane Discharge (1993) (35)
- 20 NM metamorphic HEMT WITH 660 GHZ FT (2011) (35)
- Monolithically integrated power circuits in high-voltage GaN-on-Si heterojunction technology (2017) (35)
- Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures (1999) (35)
- A 240 GHz quadrature receiver and transmitter for data transmission up to 40 Gbit/s (2013) (35)
- AlGaN/GaN epitaxy and technology (2010) (35)
- Reduced surface electron accumulation at InN films by ozone induced oxidation (2007) (34)
- Cubic InN growth on sapphire (0001) using cubic indium oxide as buffer layer (2007) (34)
- Raman studies of Ge-promoted stress modulation in 3C-SiC grown on Si(111) (2005) (34)
- Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures (2008) (34)
- Influence of the surface potential on electrical properties of AlxGa1-xN/GaN heterostructures with different Al-content: Effect of growth method (2010) (34)
- The role of surface electron accumulation and bulk doping for gas-sensing explored with single-crystalline In2O3 thin films (2016) (34)
- Generation of traps in AlGaN/GaN HEMTs during RF-and DC-stress test (2012) (34)
- Low Temperature Chemical Vapor Deposition of 3C-SiC on Si Substrates (2005) (33)
- GaN‐based high voltage transistors for efficient power switching (2013) (33)
- Luminescence properties of highly Si-doped AlN (2006) (33)
- Nitrogen Effusion and Self-Diffusion in Ga14N/Ga15N Isotope Heterostructures (1998) (33)
- 450 GHz amplifier MMIC in 50 nm metamorphic HEMT technology (2012) (32)
- Comparison of N-face and Ga-face AlGaN/GaN-Based High Electron Mobility Transistors Grown by Plasma-Induced Molecular Beam Epitaxy (1999) (32)
- Structural aspects of light emitting nc-Si prepared by plasma CVD (1993) (32)
- Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors (2010) (32)
- Correlation between strain, optical and electrical properties of InN grown by MBE (2003) (31)
- First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET (2012) (31)
- Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems (2008) (31)
- Growth of AlN nanowires by metal organic chemical vapour deposition (2006) (31)
- AlGaN-Based Bragg Reflectors (1997) (31)
- Quantitative Transmission Electron Microscopy Investigation of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al2O3(0001) (1998) (30)
- D-Band and G-Band High-Performance GaN Power Amplifier MMICs (2019) (30)
- Carrier Confinement in AlGaN/GaN Heterostructures Grown by Plasma Induced Molecular Beam Epitaxy (1998) (30)
- Ion‐Induced Modulation of Channel Currents in AlGaN/GaN High‐Electron‐Mobility Transistors (2001) (30)
- Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN (2010) (30)
- 20 nm Metamorphic HEMT technology for terahertz monolithic integrated circuits (2014) (30)
- Experimental evidence of different hydrogen donors in n -type InN (2008) (30)
- High Efficiency Digital GaN MMIC Power Amplifiers for Future Switch-Mode Based Mobile Communication Systems (2009) (30)
- Microstructure and mechanical properties of stress-tailored piezoelectric AlN thin films for electro-acoustic devices (2017) (29)
- Investigations of MBE grown InN and the influence of sputtering on the surface composition (2004) (29)
- DNA‐sensor based on AlGaN/GaN high electron mobility transistor (2011) (29)
- The first monomeric, volatile bis-azide single-source precursor to gallium nitride thin films (1996) (29)
- Investigation of growth parameters for ScAlN-barrier HEMT structures by plasma-assisted MBE (2019) (29)
- Elastic properties of nanowires (2010) (29)
- Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition (2007) (29)
- Polarization Induced Charge at Heterojunctions of the III–V Nitrides and Their Alloys (1999) (28)
- Growth and characterization of GaN:Mn epitaxial films (2003) (28)
- High frequency SAW devices on AlGaN: fabrication, characterization and integration with optoelectronics (2002) (28)
- Hypersonic characterization of sound propagation velocity in AlxGa1−xN thin films (2002) (27)
- Tuning of electrical and structural properties of indium oxide films grown by metal organic chemical vapor deposition (2007) (27)
- Carrier Recombination at Screw Dislocations in n‐Type AlGaN Layers (1999) (27)
- A 183 GHz Metamorphic HEMT Low-Noise Amplifier With 3.5 dB Noise Figure (2015) (27)
- Development of a high transconductance GaN MMIC technology for millimeter wave applications (2011) (27)
- 2 μm semiconductor disk laser with a heterodyne linewidth below 10 kHz. (2011) (27)
- Effect of nanoscale surface morphology on the phase stability of 3C-AlN films on Si(111) (2005) (27)
- Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN (2001) (27)
- Coalescence aspects of III-nitride epitaxy (2007) (26)
- Growth mechanism and electronic properties of epitaxial In2O3 films on sapphire (2011) (26)
- A 100 GHz FMCW MIMO radar system for 3D image reconstruction (2016) (26)
- Wet chemical etching of AlN in KOH solution (2006) (26)
- High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers (2016) (26)
- Influence of magnesium doping on the structural properties of GaN layers (1997) (26)
- Photoreduction and oxidation behavior of In2O3 nanoparticles by metal organic chemical vapor deposition (2007) (26)
- Integration of thin-film-fracture-based nanowires into microchip fabrication. (2008) (25)
- A Study of Hydrogen Sensing Performance of Pt–GaN Schottky Diodes (2006) (25)
- On the Accurate Measurement and Calibration of S-Parameters for Millimeter Wavelengths and Beyond (2015) (25)
- Integrated reverse-diodes for GaN-HEMT structures (2015) (25)
- Broadband High-Power W-Band Amplifier MMICs Based on Stacked-HEMT Unit Cells (2018) (25)
- Atomic scale confirmation of ferroelectric polarization inversion in wurtzite-type AlScN (2021) (25)
- Dual-Gate GaN MMICs for MM-Wave Operation (2011) (25)
- GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability (2009) (25)
- Compositional fluctuations in GaInN/GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy (1999) (24)
- Surface properties of stoichiometric and defect-rich indium oxide films grown by MOCVD (2012) (24)
- Low-Temperature OMCVD of InN Thin Films from the Novel Air-Stable Single-Molecule Precursor Azido{bis[(3-dimethylamino)propyl]}indium, (N3)In[(CH2)3NMe2]2 (1996) (24)
- A 40 dBm AlGaN/GaN HEMT power amplifier MMIC for SatCom applications at K-band (2016) (24)
- Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition (2000) (24)
- Carrier mass measurements in degenerate indium nitride (2009) (24)
- Growth of GaNAlN by low-pressure MOCVD using triethylgallium and tritertbutylaluminium (1996) (24)
- Metamorphic HEMT technology for submillimeter-wave MMIC applications (2010) (24)
- Highly Isolating and Broadband Single-Pole Double-Throw Switches for Millimeter-Wave Applications Up to 330 GHz (2018) (23)
- Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors (2000) (23)
- Reliability Analysis of LPCVD SiN Gate Dielectric for AlGaN/GaN MIS-HEMTs (2017) (23)
- Wurtzite ScAlN, InAlN, and GaAlN crystals, a comparison of structural, elastic, dielectric, and piezoelectric properties (2021) (23)
- Momentum matrix element and conduction band nonparabolicity in wurtzite GaN (2005) (23)
- Influence of GaN domain size on the electron mobility of two-dimensional electron gases in AlGaN/GaN heterostructures determined by x-ray reflectivity and diffraction (2002) (23)
- Ge-modified Si(100) substrates for the growth of 3C-SiC(100) (2006) (22)
- Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V (2015) (22)
- A 243 GHz LNA Module Based on mHEMT MMICs With Integrated Waveguide Transitions (2013) (22)
- Detection of different target-DNA concentrations with highly sensitive AlGaN/GaN high electron mobility transistors (2015) (22)
- Structural studies of single crystalline In2O3 films epitaxially grown on InN(0001) (2007) (22)
- 220 GHz wireless data transmission experiments up to 30 Gbit/s (2012) (22)
- Metalorganic chemical vapor phase deposition of AlScN/GaN heterostructures (2020) (22)
- A Broadband 220-320 GHz Medium Power Amplifier Module (2014) (22)
- Watt-level non-uniform distributed 6–37 GHz power amplifier MMIC with dual-gate driver stage in GaN technology (2014) (22)
- Observation of Fermi-edge excitons and exciton-phonon complexes in the optical response of heavily doped n -type wurtzite GaN (2009) (22)
- Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-Chip (2017) (22)
- Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT (2015) (22)
- Development of 100 nm gate AlGaN/GaN HEMT and MMIC technology suitable for mm-wave applications (2012) (21)
- GaN HEMTs and MMICs for space applications (2013) (21)
- New Low-Frequency Dispersion Model for AlGaN/GaN HEMTs Using Integral Transform and State Description (2013) (21)
- AlGaN-based ultraviolet light detectors with integrated optical filters (2000) (21)
- Surface conductivity of epitaxial InN (2005) (21)
- AlN/Diamond np-junctions (2003) (21)
- Temperature Dependence of the Pyroelectric Coefficient of AlScN Thin Films (2018) (21)
- An ultra-broadband low-noise traveling-wave amplifier based on 50nm InGaAs mHEMT technology (2012) (21)
- Design of highly-efficient GaN X-band-power-amplifier MMICs (2009) (20)
- Electrical performance of gallium nitride nanocolumns (2007) (20)
- Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT) (2002) (20)
- AlGaN Ultraviolet A and Ultraviolet C Photodetectors with Very High Specific Detectivity D* (2013) (20)
- GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy (1997) (20)
- Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy (2012) (20)
- Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition (2021) (20)
- Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors (2020) (20)
- Coherent X‐Ray Scattering Phenomenon in Highly Disordered Epitaxial AlN Films (1997) (20)
- Growth of quaternary AlInGaN/GaN heterostructures by plasma-induced molecular beam epitaxy (2000) (19)
- Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy (2010) (19)
- Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors (2012) (19)
- Improved AlGaN p-i-n Photodetectors for Monitoring of Ultraviolet Radiation (2014) (19)
- Enhanced mechanical performance of AlN/nanodiamond micro-resonators (2013) (19)
- Photoreflectance studies of (Al)Ga- and N-face AlGaN/GaN heterostructures (2003) (19)
- Static and dynamic characterization of AlN and nanocrystalline diamond membranes (2012) (19)
- Soft-switching 3 MHz converter based on monolithically integrated half-bridge GaN-chip (2016) (19)
- Metamorphic MMICs for Operation Beyond 200 GHz (2008) (18)
- Micro-electromechanical systems based on 3C-SiC/Si heterostructures (2005) (18)
- Comparison of a 35-nm and a 50-nm gate-length metamorphic HEMT technology for millimeter-wave low-noise amplifier MMICs (2017) (18)
- Photon stimulated ozone sensor based on indium oxide nanoparticles II: Ozone monitoring in humidity and water environments (2012) (18)
- Effect of surface oxidation on electron transport in InN thin films (2007) (18)
- Structures of (C5H5N)3Al(N3)3, [Me2N(CH2)3]2Al(N3) and Me2(N3)Al(H2NBut). Low-temperature OMVPE of AlN in the absence of ammonia (1996) (18)
- Influence of strain and buffer layer type on In incorporation during GaInN MOVPE (1999) (18)
- High efficient terahertz emission from InN surfaces (2007) (18)
- AlN/GaN HEMTs grown by MBE and MOCVD: Impact of Al distribution (2017) (18)
- Growth of and AlGaN by MOCVD using triethylgallium and tritertiarybutylaluminium (1997) (18)
- Novel single source precursors for MOCVD of AlN, GaN and InN☆ (1997) (18)
- InN as THz emitter excited at 1060 nm and 800 nm (2006) (17)
- Nanowire-based electromechanical biomimetic sensor (2007) (17)
- On the exceptional temperature stability of ferroelectric Al1-xScxN thin films (2021) (17)
- Piezoelectric properties of thin AlN layers for MEMS application determined by piezoresponse force microscopy (2006) (17)
- A compact W-band LFMCW radar module with high accuracy and integrated signal processing (2015) (17)
- A novel GaN-based multiparameter sensor system for biochemical analysis (2008) (17)
- MOVPE of GaInN heterostructures and quantum wells (1998) (17)
- Comment on "mie resonances, infrared emission, and the band gap of InN". (2004) (17)
- High-Gain Millimeter-Wave AlGaN/GaN Transistors (2013) (17)
- Growth of three-dimensional SiC clusters on Si modelled by KMC (2005) (17)
- Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors (2015) (17)
- Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films (2001) (17)
- Impact of silicon incorporation on the formation of structural defects in AlN (2006) (16)
- High efficiency X-band AlGaN/GaN MMICs for space applications with lifetimes above 105 hours (2012) (16)
- Generation–recombination noise of DX centers in AlN:Si (2001) (16)
- A 67 GHz GaN Voltage-Controlled Oscillator MMIC With High Output Power (2013) (16)
- 8–42 GHz GaN non-uniform distributed power amplifier MMICs in microstrip technology (2012) (16)
- 243 GHz low-noise amplifier MMICs and modules based on metamorphic HEMT technology (2014) (16)
- Yellow Luminescence and Hydrocarbon Contamination in MOVPE‐Grown GaN (1996) (16)
- RF Performance of Trigate GaN HEMTs (2016) (16)
- Insertion of C60 into multi-wall carbon nanotubes: a synthesis of C60@MWCNT (2004) (16)
- Comparative Determination of Absolute Raman Scattering Efficiencies and Application to GaN (1998) (16)
- Continuous-ClassF3 power amplifier mode varying simultaneously first 3 harmonic impedances (2012) (16)
- Group III‐nitride and SiC based micro‐ and nanoelectromechanical resonators for sensor applications (2006) (16)
- Enhanced electromechanical coupling in SAW resonators based on sputtered non-polar Al0.77Sc0.23N 11 2 ¯ 0 thin films (2020) (16)
- Analysis and optimization of sputter deposited AlN-layers for flexural plate wave devices (2016) (16)
- AlGaN/GaN-based MEMS with two-dimensional electron gas for novel sensor applications (2008) (16)
- TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF EXCITONS IN HEXAGONAL GAN LAYERS GROWN ON SAPPHIRE (1998) (16)
- Impact of Al content on transport properties of two-dimensional electron gas in GaN/AlxGa1−xN/GaN heterostructures (2010) (16)
- Space charge limited electron transport in AlGaN photoconductors (2007) (15)
- Laser-Processing for Patterned and Free-Standing Nitride Films (1997) (15)
- Lateral polarity heterostructures by overgrowth of patterned Al x Ga 1-x N nucleation layers (2000) (15)
- Normally-Off AlGaN/GaN/AlGaN Double Heterostructure FETs With a Thick Undoped GaN Gate Layer (2015) (15)
- DISORDER-ACTIVATED SCATTERING AND TWO-MODE BEHAVIOR IN RAMAN SPECTRA OF ISOTOPIC GAN AND ALGAN (1999) (15)
- Highly efficient THz emission from differently grown InN at 800 nm and 1060 nm excitation (2008) (15)
- K-band ESR studies of structural anisotropy in P3HT and P3HT/PCBM blend polymer solid films: Paramagnetic defects after continuous wave Xe-lamp photolysis (2009) (15)
- Metalorganic vapor phase epitaxial growth of GaInN/GaN hetero structures and quantum wells (1996) (15)
- Sub-MHz-Linewidth 200-mW Actively Stabilized 2.3-μm Semiconductor Disk Laser (2011) (15)
- Q- and E-band amplifier MMICs for satellite communication (2014) (15)
- High-gain over 30% PAE power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies (2015) (15)
- Electric field distribution in GaN∕AlGaN∕GaN heterostructures with two-dimensional electron and hole gas (2008) (15)
- Pinhole-free ultra-thin nanocrystalline diamond film growth via electrostatic self-assembly seeding with increased salt concentration of nanodiamond colloids (2016) (15)
- Sputter depth profiling of InN layers (2004) (15)
- Benchmarking of Large-Area GaN-on-Si HFET Power Devices for Highly-Efficient, Fast-Switching Converter Applications (2013) (15)
- Exciton quenching in Pt/GaN Schottky diodes with Ga- and N-face polarity (2003) (15)
- Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range (2018) (15)
- X‐ray diffraction study of gallium nitride grown by MOCVD (1996) (15)
- Full W-Band GaN Power Amplifier MMICs Using a Novel Type of Broadband Radial Stub (2018) (14)
- Fractal structures for low-resistance large area AlGaN/GaN power transistors (2012) (14)
- Resonant localized donor state above the conduction band minimum in InN (2005) (14)
- A highly linear 84 GHz low noise amplifier MMIC in AlGaN/GaN HEMT technology (2011) (14)
- Comparison of two W-band low-noise amplifier MMICs with ultra low power consumption based on 50nm InGaAs mHEMT technology (2013) (14)
- Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si (2013) (14)
- Stability Investigation of Large Gate-Width Metamorphic High Electron-Mobility Transistors at Cryogenic Temperature (2016) (14)
- Processing of novel SiC and group III-nitride based micro- and nanomechanical devices (2005) (14)
- A 92 GHz GaN HEMT voltage-controlled oscillator MMIC (2014) (14)
- Suspended nanowire web (2007) (14)
- Photoluminescence from Nanocrystalline Silicon Prepared by Plasma CVD and Oxidation (1993) (14)
- Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures (2021) (14)
- Dynamics of thermalization in GaInN/GaN quantum wells grown on ammonothermal GaN (2013) (13)
- Tuning of Surface Properties of AlGaN/GaN Sensors for Nanodroplets and Picodroplets (2006) (13)
- Large-Area Lateral AlGaN/GaN-on-Si Field-Effect Rectifier With Low Turn-On Voltage (2020) (13)
- Dynamical optical investigation of polymer/fullerene composite solar cells (2008) (13)
- Improved Structural and Chemical Properties of Nearly Lattice-Matched Ternary and Quaternary Barriers for GaN-Based HEMTs (2011) (13)
- Conduction band parameters of ZnO (2006) (13)
- A W-Band MMIC Radar System for Remote Detection of Vital Signs (2012) (13)
- Quantitative Auger electron spectroscopy of SiC (2006) (13)
- Polytype control and properties of AlN on silicon (2005) (13)
- Raman characterization of the optical phonons in AlxGa1−xN layers grown by MBE and MOCVD (1997) (13)
- Analysis of composition fluctuations on an atomic scale in Al0.25Ga0.75N by high-resolution transmission electron microscopy (1998) (13)
- W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology (2018) (13)
- Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si (2019) (13)
- Dielectric Function of “Narrow” Band Gap InN (2002) (13)
- GaN-on-Si Enhancement Mode Metal Insulator Semiconductor Heterostructure Field Effect Transistor with On-Current of 1.35 A/mm (2013) (13)
- Polarization Induced Effects in GaN-based Heterostructures and Novel Sensors (2008) (13)
- Millimeter-Wave Single-Pole Double-Throw Switches Based on a 100-nm Gate-Length AlGaN/GaN-HEMT Technology (2019) (13)
- Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures (2001) (13)
- Active millimeter-wave imaging system for material analysis and object detection (2011) (13)
- Trapping Effects at the Drain Edge in 600 V GaN-on-Si HEMTs (2016) (12)
- ANALYSIS OF NANOSTRUCTURES BY MEANS OF AUGER ELECTRON SPECTROSCOPY (2007) (12)
- Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges (2017) (12)
- A fully scalable compact small-signal modeling approach for 100 nm AlGaN/GaN HEMTs (2013) (12)
- Mobility edge in hydrogenated amorphous carbon (2006) (12)
- CIP (cleaning-in-place) stability of AlGaN/GaN pH sensors. (2013) (12)
- A 200 GHz active heterodyne receiver MMIC with low sub-harmonic LO power requirements for imaging frontends (2009) (12)
- The performance of AlGaN solar blind UV photodetectors: responsivity and decay time (2006) (12)
- Design of X-Band GaN MMICs using field plates (2009) (12)
- Etching of SiC with Fluorine ECR Plasma (2004) (12)
- GaN-based E-band power amplifier modules (2016) (12)
- Novel semi-reactively-matched multistage broadband power amplifier architecture for monolithic ICs in GaN technology (2013) (12)
- Electronic properties of C60/InP(001) heterostructures (2006) (12)
- High-resolution diffuse x-ray scattering from threading dislocations in heteroepitaxial layers (2004) (12)
- A Transmitter System-in-Package at 300 GHz With an Off-Chip Antenna and GaAs-Based MMICs (2019) (12)
- High voltage electrochemical exfoliation of graphite for high-yield graphene production (2019) (12)
- Prospects and Limitations of Stacked-FET Approaches for Enhanced Output Power in Voltage-Controlled Oscillators (2016) (12)
- Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy (2004) (12)
- MOCVD‐Epitaxy on Free‐Standing HVPE‐GaN Substrates (1999) (12)
- Small signal modelling approach for submillimeter wave III–V HEMTs with analysation and optimization possibilities (2016) (12)
- PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN (1996) (11)
- Analysis and Development of Submillimeter-Wave Stacked-FET Power Amplifier MMICs in 35-nm mHEMT Technology (2018) (11)
- Origin of n‐type conductivity in nominally undoped InN (2006) (11)
- High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs (2015) (11)
- A 243 GHz low-noise amplifier module for use in next-generation direct detection radiometers (2013) (11)
- GaN polarity domains spatially resolved by x-ray standing wave microscopy (2003) (11)
- Polarization Induced Effects in AlGaN/GaN Heterostructures (2000) (11)
- A single chip broadband noise source for noise measurements at cryogenic temperatures (2011) (11)
- Work function analysis of GaN-based lateral polarity structures by Auger electron energy measurements (2006) (11)
- Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor (2016) (11)
- A Monolithic Integrated mHEMT Chipset for High-Resolution Submillimeter-Wave Radar Applications (2013) (11)
- First-principles calculation of electroacoustic properties of wurtzite (Al,Sc)N (2020) (11)
- Thermal functionalization of GaN surfaces with 1-alkenes. (2013) (11)
- Self-organized SiC nanostructures on silicon (2004) (11)
- Two-Dimensional Electron Gas Recombination in Undoped AlGaN/GaN Heterostructures (2004) (11)
- Photoluminescence from Microcrystalline Silicon and Related Materials (1992) (11)
- Photoreflectance studiesof N‐ and Ga‐face AlGaN/GaN heterostructures confininga polarisation induced 2DEG (2003) (11)
- Analysis of composition fluctuations in AlxGa1−xN (1999) (11)
- A portable W-band radar system for enhancement of infrared vision in fire fighting operations (2016) (10)
- Ionization Energy and Electron Affinity of Clean and Oxidized Al x Ga 1−x N(0001) Surfaces (2001) (10)
- Efficient AlGaN/GaN HEMT Power Amplifiers (2008) (10)
- The role of Ge predeposition temperature in the MBE epitaxy of SiC on Ssilicon (2004) (10)
- Influence of buffer layers on the In-content of GaInN layers (1998) (10)
- Corrugated piezoelectric membranes for energy harvesting from aperiodic vibrations (2013) (10)
- First demonstration of W-band Tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power (2017) (10)
- Novel destructive-interference-envelope detector for high data rate ASK demodulation in wireless communication receivers (2015) (10)
- Monolithic GaN-on-Si Half-Bridge Circuit with Integrated Freewheeling Diodes (2016) (10)
- Graphene as an active virtually massless top electrode for RF solidly mounted bulk acoustic wave (SMR-BAW) resonators (2018) (10)
- SiC-based FET for detection of NOx and O2 using InSnOx as a gate material (2007) (10)
- Low-Loss Millimeter-Wave SPDT Switch MMICs in a Metamorphic HEMT Technology (2020) (10)
- A single-chip 77 GHz heterodyne receiver MMIC in 100 nm AlGaN/GaN HEMT technology (2011) (10)
- Elastic properties of ultrathin diamond/AlN membranes (2014) (10)
- Broadband E-Band Power Amplifier MMIC Based on an AlGaN/GaN HEMT Technology with 30 dBm Output Power (2016) (10)
- Operation of PCB-embedded, high-voltage multilevel-converter GaN-IC (2017) (10)
- Influence of Different Surface Morphologies on the Performance of High-Voltage, Low-Resistance Diamond Schottky Diodes (2020) (10)
- High-efficiency power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies (2013) (10)
- Gas Pressure Sensing Based on MEMS Resonators (2007) (10)
- Clusters in A Silane Glow Discharge: Mechanism of Their Formation and How to Avoid Them (1993) (10)
- A low-power W-band receiver MMIC for amplitude modulated wireless communication up to 24 Gbit/s (2014) (10)
- Microstructural characterisation of nanocrystalline GaN prepared by detonations of gallium azides (1998) (9)
- W-Band LNA MMICs Based on a Noise-Optimized 50-nm Gate-Length Metamorphic HEMT Technology (2019) (9)
- High-efficiency power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies (2013) (9)
- Monolithic three-stage 6–18GHz high power amplifier with distributed interstage in GaN technology (2015) (9)
- Transition energies and Stokes shift analysis for In‐rich InGaN alloys (2006) (9)
- Normal and Inverted Algan/Gan Based Piezoelectric Field effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy (1998) (9)
- Structural properties of MBE AlInN and AlGaInN barrier layers for GaN‐HEMT structures (2010) (9)
- High-Efficiency, High-Temperature Continuous Class-E Sub-Waveform Solution AlGaN/GaN Power Amplifier (2015) (9)
- Investigations of Active Antenna Doherty Power Amplifier Modules Under Beam-Steering Mismatch (2018) (9)
- Millimeter-wave circuits and modules up to 500 GHz based on metamorphic HEMT technology for remote sensing and wireless communication applications (2011) (9)
- Linear temperature sensors in high-voltage GaN-HEMT power devices (2016) (9)
- Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy (2006) (9)
- Electrostatically coupled vibration modes in unimorph complementary microcantilevers (2012) (9)
- A novel bio‐functionalization of AlGaN/GaN‐ISFETs for DNA‐sensors (2010) (9)
- Interaction of indium oxide nanoparticle film surfaces with ozone, oxygen and water (2016) (9)
- Investigation of GaN-HEMTs in Reverse Conduction (2017) (9)
- Multilayer material analysis using an active millimeter wave imaging system (2013) (9)
- SIMS investigation of the influence of Ge pre‐deposition on the interface quality between SiC and Si (2004) (9)
- Sub-10 nanometer uncooled platinum bolometers via plasma enhanced atomic layer deposition (2013) (9)
- 107–112 Gbit/s fully integrated CDR/1:2 DEMUX using InP-based DHBTs (2010) (9)
- Defect related absorption and emission in AlGaN solar-blind UV photodetectors (2005) (9)
- W-band radiometer system with switching front-end for multi-load calibration (2011) (9)
- Enhanced actuation of nanocrystalline diamond microelectromechanical disk resonators with AlN layers (2016) (9)
- A scalable compact small-signal mHEMT model accounting for distributed effects in sub-millimeter wave and terahertz applications (2014) (9)
- Degradation processes in the cellulose/N-methylmorpholine-N-oxide system studied by HPLC and ESR. Radical formation/recombination kinetics under UV photolysis at 77 K (2007) (9)
- An investigation of millimeter wave switches based on shunt transistors including SPDT SWITCH MMICs up to 300 GHz (2016) (9)
- Modeling and realization of GaN-based dual-gate HEMTs and HPA MMICs for Ku-band applications (2011) (9)
- Broadband GaN-Based Switch-Mode Core MMICs with 20 W Output Power Operating at UHF (2011) (9)
- Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency (2010) (8)
- A 50-nm gate-length metamorphic HEMT distributed power amplifier MMIC based on stacked-HEMT unit cells (2017) (8)
- Electrostatic Self-Assembly of Diamond Nanoparticles onto Al- and N-Polar Sputtered Aluminum Nitride Surfaces (2016) (8)
- Backside Process Free Broadband Amplifier MMICs at D-Band and H-Band in 20 nm mHEMT Technology (2014) (8)
- Reliability of AlGaN/GaN HEMTs under DC- and RF-operation (2009) (8)
- GaN‐based high‐frequency devices and circuits: A Fraunhofer perspective (2012) (8)
- Integrated Current Sensing in GaN Power ICs (2019) (8)
- Planar Zero Bias Schottky Diodes on an InGaAs Metamorphic HEMT MMIC Process (2014) (8)
- AlGaN avalanche Schottky diodes with high Al-content (2019) (8)
- High-Power (>2 W) E-Band PA MMIC Based on High Efficiency GaN-HEMTs with Optimized Buffer (2019) (8)
- MOEMS tunable microlens made of aluminum nitride membranes (2013) (8)
- Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices (2014) (8)
- Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length (2016) (8)
- Transparent diamond electrodes for tunable micro-optical devices☆ (2013) (8)
- Electronic and photoconductive properties of ultrathin InGaN photodetectors (2008) (8)
- Tunable compound eye cameras (2010) (8)
- Reliability and degradation mechanism of 0.25 µm AlGaN/GaN HEMTs under RF stress conditions (2011) (8)
- The transition from 2D to 3D nanoclusters of silicon carbide on silicon (2003) (8)
- In situ spectroscopic ellipsometry of hydrogen-argon plasma cleaned silicon surfaces (2004) (8)
- Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs (2011) (8)
- Formation of Si clusters in AlGaN: A study of local structure (2007) (8)
- Quasi-normally-off GaN gate driver for high slew-rate d-mode GaN-on-Si HEMTs (2015) (8)
- Influence of substrate holder configurations on bias enhanced nucleation area for diamond heteroepitaxy: Toward wafer-scale single-crystalline diamond synthesis (2019) (8)
- Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design (2015) (8)
- Influence of plasma treatments on the properties of GaN/AlGaN/GaN HEMT structures (2012) (8)
- Gap state absorption in AlGaN photoconductors and solar‐blind photodetectors (2004) (8)
- Excitonic contribution to the optical absorption in zinc-blende III-V semiconductors (2006) (8)
- 10 W high-efficiency high-brightness tapered diode lasers at 976 nm (2008) (8)
- Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer (2020) (8)
- GaN/SiC heterojunction bipolar transistors (2000) (8)
- Realization of a 30-W highly efficient and linear reconfigurable dual-band power amplifier using the continuous mode approach (2013) (7)
- A $G$ -Band Broadband Balanced Power Amplifier Module Based on Cascode mHEMTs (2018) (7)
- GCPW GaAs Broadside Couplers at H-Band and Application to Balanced Power Amplifiers (2019) (7)
- Noise Performance of Sub-100-nm Metamorphic HEMT Technologies (2020) (7)
- A W-band wireless communication transmitter utilizing a stacked-FET oscillator for high output power performance (2016) (7)
- Study of inversion domain pyramids formed during the GaN:Mg growth (2003) (7)
- W-band MMIC radar modules for remote detection of vital signs (2012) (7)
- Analysis and modeling of GaN-based multi field plate Schottky power diodes (2016) (7)
- Electromechanical resonances of SiC and AlN beams under ambient conditions (2005) (7)
- Lateral alignment of SiC dots on Si (2004) (7)
- InN/In2O3 heterostructures (2008) (7)
- Active harmonic source-/load-pull measurements of AlGaN/GaN HEMTs at X-band frequencies (2014) (7)
- A compact, universal and cost-efficient antenna setup for mmW-radar applications (2013) (7)
- N-Methylmorpholine-N-oxide ring cleavage registration by ESR under heating conditions of the Lyocell process. (2008) (7)
- Influence of AlGaN barrier thickness on electrical and device properties in Al0.14Ga0.86N/GaN high electron mobility transistor structures (2012) (7)
- Active load modules for W-band radiometer calibration (2012) (7)
- High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates (2003) (7)
- Large area InN terahertz emitters based on the lateral photo-Dember effect (2015) (7)
- Linear alignment of SiC dots on silicon substrates (2004) (7)
- Photoreflectance Studies of AlGaN/GaN Heterostructures Containing a Polarisation Induced 2DEG (2002) (7)
- Using defined structures on very thin foils for characterizing AFM tips. (2007) (7)
- High-speed technologies based on III-V compound semiconductors at Fraunhofer IAF (2013) (7)
- 190-GHz G-Band GaN Amplifier MMICs with 40GHz of Bandwidth (2019) (7)
- Design and realization of GaN RF-devices and circuits from 1 to 30 GHz (2010) (7)
- PCB-Embedding for GaN-on-Si Power Devices and ICs (2018) (7)
- Transport properties of two-dimensional electron gases induced by spontaneous and piezoelectric polarisation in AlGaN/GaN heterostructures (2001) (7)
- A 96 GHz radar system for respiration and heart rate measurements (2012) (7)
- Dual-band Class-ABJ AlGaN/GaN high power amplifier (2012) (7)
- Wettability Investigations and Wet Transfer Enhancement of Large-Area CVD-Graphene on Aluminum Nitride (2017) (7)
- The role of Ti/A1 ratio in nanolayered ohmic contacts for GaN/AlGaN HEMTs (2008) (7)
- α-SiC–β-SiC heteropolytype structures on Si (111) (2005) (7)
- Riemann-Pump based RF-Power DACs in GaN Technology for 5G Base Stations (2018) (6)
- Kinetic Monte Carlo simulation of SiC nucleation on Si(111) (2004) (6)
- Determination of strain and composition in SiC/Si and AlN/Si heterostructures by FTIR-ellipsometry (2006) (6)
- Electrical properties of AlxGa1-xN/GaN heterostructures with low Al content (2011) (6)
- Influence of metal thickness to sensitivity of Pt/GaN Schottky diodes for gas sensing applications (2003) (6)
- Novel Sensor Applications of group-III nitrides (2001) (6)
- Submicron-AlGaN/GaN MMICs for space applications (2013) (6)
- InP-based heterojunction bipolar transistors with InGaAs/GaAs strained-layer-superlattice (2011) (6)
- A millimeter-wave low-noise amplifier MMIC with integrated power detector and gain control functionality (2016) (6)
- Nanocrystalline AlN:Si field emission arrays for vacuum electronics (2006) (6)
- Infrared ellipsometry of SiC/Si heterostructures with Ge modified interfaces (2004) (6)
- Electrical and structural properties of AlGaN: A comparison with CVD diamond (1998) (6)
- (In)AlGaN Heterojunction Field Effect Transistors and Circuits for High-Power Applications at Microwave and Millimeter-Wave Frequencies (2013) (6)
- Growth and Fabrication of Quasivertical Current Aperture Vertical Electron Transistor Structures (2020) (6)
- A 600V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors (2020) (6)
- Charge trapping in gate-drain access region of AlGaN/GaN MIS-HEMTs after drain stress (2015) (6)
- Formation of icosahedron twins during initial stages of heteroepitaxial diamond nucleation and growth (2019) (6)
- Characterization of Al2O3/GaAs interfaces and thin films prepared by atomic layer deposition (2013) (6)
- A 600V GaN-on-Si Power IC with Integrated Gate Driver, Freewheeling Diode, Temperature and Current Sensors and Auxiliary Devices (2020) (6)
- Low-power wireless data transmitter MMIC with data rates up to 25 Gbit/s and 9.5mW power consumption using a 113 GHz carrier (2014) (6)
- Monolithically-Integrated Mulitlevel Inverter on Lateral GaN-on-Si Technology for High-Voltage Applications (2015) (6)
- Class-BJ power amplifier modes: The IMD behavior of reactive terminations (2013) (6)
- Design, Realization, and Evaluation of a Riemann Pump in GaN Technology (2017) (6)
- Minority Carrier Diffusion Length in AlGaN: A Combined Electron Beam Induced Current and Transmission Microscopy Study (1998) (6)
- FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS (2007) (6)
- Quasi-Bessel beams from asymmetric and astigmatic illumination sources. (2016) (6)
- Switching frequency modulation for GaN-based power converters (2015) (6)
- Compact W-band receiver module on hybrid liquid crystal polymer board (2016) (6)
- Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests (2014) (6)
- Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN Heterostructures (2001) (6)
- Electron transport properties of indium oxide – indium nitride metal‐oxide‐semiconductor heterostructures (2008) (5)
- Defect-related noise in AlN and AlGaN alloys (2001) (5)
- Composition and Interface Chemistry Dependence in Ohmic Contacts to GaN HEMT Structures on the Ti/Al Ratio and Annealing Conditions (2009) (5)
- 70-116-GHz LNAs in 35-nm and 50-nm Gate-Length Metamorphic HEMT Technologies for Cryogenic and Room-Temperature Operation (2018) (5)
- Stress Control in 3C-SiC Films Grown on Si(111) (2004) (5)
- SILICON MIGRATION OF THROUGH-HOLES IN SINGLE- AND POLY-CRYSTALLINE SILICON MEMBRANES (2014) (5)
- Structural properties of AlxGa1−xN grown on sapphire by molecular beam epitaxy (2000) (5)
- Markers prepared by focus ion beam technique for nanopositioning procedures (2007) (5)
- Micromachining of Novel SiC on Si Structures for Device and Sensor Applications (2006) (5)
- Wireless communications on THz carriers takes shape (2014) (5)
- Reverse bias stress test of GaN HEMTs for high-voltage switching applications (2012) (5)
- Atomic Layer Deposition of Aluminum Oxide for Surface Passivation of InGaAs/InP Heterojunction Bipolar Transistors (2011) (5)
- Sapphire-GaN-based planar integrated free-space optical system. (2008) (5)
- Characterization of AlGaN‐Schottky Diodes Grown by Plasma Induced Molecular Beam Epitaxy (1999) (5)
- Advanced building blocks for (Sub-)millimeter-wave applications in space, communication, and sensing using III/V mHEMT technology (2016) (5)
- A 280 GHz stacked-FET power amplifier cell using 50 nm metamorphic HEMT technology (2016) (5)
- Reactively sputtered InxVyOz films for detection of NOx, D2, and O2 (2007) (5)
- Response of Nerve Cell to Inhibitor Recorded by Aluminium-Gallium-Nitride FET (2009) (5)
- High-performance 60 GHz MMICs for wireless digital communication in 100 nm mHEMT technology (2011) (5)
- GaN power FETs for next generation mobile communication systems (2010) (5)
- The Influence of Spontaneous and Piezoelectric Polarization on Novel AlGaN/GaN/InGaN Device Structures (1999) (5)
- Serpentine geometry for enhanced performance of nanometer-thin platinum bolometers (2013) (5)
- Impedance Characterization of DNA-functionalization Layers on AlGaN/GaN High Electron Mobility Transistors☆ (2015) (5)
- Broadband and High-Gain 400-GHz InGaAs mHEMT Medium-Power Amplifier S-MMIC (2020) (5)
- Piezoelectric actuation of all-nitride MEMS (2008) (5)
- Investigation of Temperature Characteristics and Substrate Influence on AlSeN-Based SAW Resonators (2018) (5)
- Optimization of Metal‐Organic Chemical Vapor Deposition Regrown n‐GaN (2019) (5)
- Multi-Stage Cascode in High-Voltage A1GaN/GaN-on-Si Technology (2018) (5)
- Fully unstrained GaN on sacrificial AlN layers by nano‐heteroepitaxy (2007) (5)
- Excitons and exciton‐phonon coupling in the optical response of GaN (2014) (5)
- Performance of tri-gate AlGaN/GaN HEMTs (2016) (5)
- The conductivity of Mg‐doped InN (2006) (5)
- Flexural plate wave sensors with buried IDT for sensing in liquids (2017) (5)
- Trade‐offs between performance and reliability in AlGaN/GaN transistors (2012) (5)
- Piezo-force and vibration analysis of ZnO nanowire arrays for sensor application (2016) (5)
- Vertical Buffer Leakage and Temperature Effects on the Breakdown Performance of GaN/AlGaN HEMTs on Si Substrate (2015) (5)
- High Power, Broadband, Linear, Solid State Amplifier. (1999) (5)
- Integrated-Schottky-diode GaN HFETs for high-efficiency digital PA MMICs at 2 GHz (2010) (5)
- Individual source vias for GaN HEMT power bars (2013) (5)
- Carbon surface diffusion and SiC nanocluster self-ordering (2006) (5)
- A Noise Source Module for In-Situ Noise Figure Measurements From DC to 50 GHz at Cryogenic Temperatures (2012) (5)
- Analysis of nanocrystalline films on rough substrates. (2007) (5)
- Growth model investigation for AlN/Al(Ga)InN interface growth by plasma‐assisted molecular beam epitaxy for high electron mobility transistor applications (2014) (5)
- Monolithic integrated 210 GHz couplers for balanced mixers and image rejection mixers (2010) (5)
- A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation (2021) (5)
- Building Blocks for GaN Power Integration (2021) (5)
- Design of near lattice-matched AlGaInN-barriers for highly-scalable GaN-based transistor structures (2010) (5)
- GaAs microstrip-to-waveguide transition operating in the WR-1.5 waveguide band (500–750 GHz) (2012) (5)
- AlGaN/GaN power amplifiers for ISM applications (2012) (5)
- Broadband 400-GHz InGaAs mHEMT Transmitter and Receiver S-MMICs (2021) (5)
- Spectroscopic Measurement of Material Properties Using an Improved Millimeter-Wave Ellipsometer Based on Metallic Substrates (2016) (5)
- AUGER DEPTH PROFILING AND FACTOR ANALYSIS OF SPUTTER INDUCED ALTERED LAYERS IN SiC (2003) (5)
- Tunable refractive beam steering using aluminum nitride thermal actuators (2011) (4)
- Study on data transmission of complex modulated signals using an MMIC-based 220 GHz wireless link (2012) (4)
- Defect transitions in GaN between 3.0 and 3.4 eV (1996) (4)
- Elemental Analysis On Group-Hi Nitrides Using Heavy Ion Erd (1997) (4)
- Advanced mHEMT Technologies for Space Applications (2009) (4)
- A compact 94 GHz FMCW radar MMIC based on 100 nm InGaAs mHEMT technology with integrated transmission signal conditioning (2013) (4)
- Isotropic dry-etching of SiC for AlGaN/GaN MEMS fabrication (2008) (4)
- Piezo-actuated tunable diamond/AlN micro lenses (2013) (4)
- Subharmonically Pumped 210 GHz I/Q Mixers (2010) (4)
- Piezoelectric actuated epitaxially grown AlGaN/GaN‐resonators (2010) (4)
- Characterization of GaN‐based lateral polarity heterostructures (2008) (4)
- A 300 GHz microstrip multilayered antenna on quartz substrate (2018) (4)
- Integrated 2-b Riemann Pump RF-DAC in GaN Technology for 5G Base Stations (2019) (4)
- A 200 GHz driver amplifier in metamorphic HEMT technology (2015) (4)
- A tunable 140GHz analog phase shifter with high linearity performance (2012) (4)
- MMIC based wireless data transmission of a 12.5 Gbit/s signal using a 220 GHz carrier (2011) (4)
- Photodegradataion and Stability of a-Si Prepared at High Deposition Rates (1992) (4)
- Influence of surface roughness on the optical mode profile in GaN-based violet ridge waveguide laser diodes (2014) (4)
- Simulation and analysis of low-resistance AlGaN/GaN HFET power switches (2011) (4)
- First Demonstration of G-Band Broadband GaN Power Amplifier MMICs Operating Beyond 200 GHz (2020) (4)
- Photoluminescence of Ga-face AlGaN/GaN single heterostructures (2001) (4)
- Critical points of the bandstructure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy (2006) (4)
- Novel Layout and Packaging for Lateral, Low-Resistance GaN-on-Si Power Transistors (2014) (4)
- Laser-Induced Liftoff And Laser Patterning Of Large Free-Standing GaN Substrates (2000) (4)
- Spin Resonance Investigations of GaN and AlGaN (1996) (4)
- High-Gain AlGaN/GaN HEMT Single Chip E-Band Power Amplifier MMIC with 30 dBm Output Power (2015) (4)
- 3C-SiC:Ge alloys grown on Si (111) substrates by SSMBE (2004) (4)
- Properties of higher-order surface acoustic wave modes in Al1−xScxN/sapphire structures (2021) (4)
- Evaluation of AlN material properties through vibration analysis of thin membranes (2012) (4)
- Nano-diamond vacuum MEMS for RF applications (2013) (4)
- A new type of highly sensitive portable ozone sensor operating at room temperature (2006) (4)
- Effect of island coalescence on structural and electrical properties of InN thin films (2007) (4)
- Slew rate control of a 600 V 55 mΩ GaN cascode (2016) (4)
- Impact of Metallization Layer Structure on the Performance of G-Band Branch-Line Couplers (2015) (4)
- Study of a silicon parallel plate capacitor as a dew point sensor (2016) (4)
- Piezoelectric AlN Films for FPW Sensors with Improved Device Performance (2016) (4)
- Analysis of the Growth of Laterally Aligned SnO2 Nanowires by Thermodynamic Considerations and Experiments (2020) (4)
- Growth and characterization of InAlN layers nearly lattice-matched to GaN (2011) (4)
- Development of a Silicon-Only Capacitive Dew Point Sensor (2017) (4)
- Cryogenic low noise amplifier development for 67–116 GHz (2014) (4)
- Temperature Cross-Sensitivity of AlN-Based Flexural Plate Wave Sensors (2018) (4)
- Cubic InN on r-plane sapphire (2004) (4)
- Thermoresistive and piezoresistive properties of wurtzite n-GaN (2002) (4)
- Balanced Microstrip AlGaN/GaN HEMT Power Amplifier MMIC for X-Band Applications (2008) (3)
- Resonant Piezoelectric ALGaN/GaN MEMS Sensors in Longitudinal Mode Operation (2009) (3)
- Determination of Elastic and Piezoelectric Properties of Al0.84Sc0.16N Thin Films (2018) (3)
- Enhanced AlScN/GaN Heterostructures Grown with a Novel Precursor by Metal–Organic Chemical Vapor Deposition (2022) (3)
- Harmonic termination of AlGaN/GaN/(Al)GaN-single-and double-heterojunction HEMTs (2010) (3)
- Mid gap photoluminescence from GaN:Mn, a magnetic semiconductor (2003) (3)
- Broadband low-noise GaN HEMT TWAs using an active distributed drain bias circuit (2015) (3)
- Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs (2012) (3)
- Characterization of AlGaN/GaN-on-Si HFETs in high-power converter applications (2014) (3)
- Advanced mHEMT MMICs for 220 GHz high‐resolution imaging systems (2009) (3)
- Dynamic characterization of thin aluminum nitride microstructures (2011) (3)
- Analysis of Dielectric Properties of Layered Plastics at W-Band Frequencies (2014) (3)
- Nano-diamond based spheres for radio frequency electromechanical resonators (2014) (3)
- A microwave high-power GaN transistor with highly-integrated active digital switch-mode driver circuit (2014) (3)
- Large-Signal Modeling of a Scalable High- ${Q}$ AlGaN/GaN High Electron-Mobility Varactor (2019) (3)
- Morphology and Stress Control in UHVCVD of 3C-SiC(100) on Si (2007) (3)
- A broadband 175–245 GHz balanced medium power amplifier using 50-nm mHEMT technology (2016) (3)
- A dual-band UMTS/LTE highly power-efficient Class-ABJ Doherty GaN PA (2015) (3)
- Stability of GaN films under intense MeV He ion irradiation (2007) (3)
- Microstructural and optical emission properties of diamond multiply twinned particles (2020) (3)
- Ultra-High-Speed Transmitter and Receiver ICs for 100 Gbit/s Ethernet Using InP DHBTs (2011) (3)
- Influence of structural properties on the ferroelectric behavior of hexagonal AlScN (2022) (3)
- Preparation of Epitaxial Templates for Molecular Beam Epitaxy of III-Nitrides on Silicon Substrates (2003) (3)
- InP DHBT-based 1:2 DEMUX IC operating at up to 120 Gbit/s (2009) (3)
- Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz (2010) (3)
- Tunable cylindrical microlenses based on aluminum nitride membranes (2013) (3)
- Electroluminescence Investigation of the Lateral Field Distribution in AlGaN/GaN HEMTs for Power Applications (2014) (3)
- Highly Scalable Distributed High Electron Mobility Transistor Model (2019) (3)
- Growth of silicon nanowires on UV-structurable glass using self-organized nucleation centres (2007) (3)
- Device and Design Optimization for AlGaN/GaN X-Band-Power-Amplifiers with High Efficiency (2009) (3)
- Packaged AlGaN/GaN HEMT power bars with 900 W output power and high PAE at L-band (2016) (3)
- Role of defect centers in recombination processes in GaN monocrystals (2002) (3)
- Optical-Gain Measurements on GaN and Al x Ga 1-x N Heterostructures (1997) (3)
- Infrared Gratings Based on SiC/Si-Heterostructures (2005) (3)
- Nanodiamond resonators fabricated on 8″ Si substrates using adhesive wafer bonding (2017) (3)
- Asymmetrical Substrate-Biasing Effects at up to 350V Operation of Symmetrical Monolithic Normally-Off GaN-on-Si Half-Bridges (2019) (3)
- A Novel Type of Broadband Radial Stub (2018) (3)
- Nanoscale Hexagonal Gallium Nitride from Single Molecule Precursors: Microstructure and Crystallite Size Dependent Photoluminescence (1998) (3)
- Finite Element Analysis of SAW Propagation Characteristics in c-plane (0001) and a-plane (11-20) AlScN Thin Films (2019) (3)
- Technology of GaN-Based Large Area CAVETs With Co-Integrated HEMTs (2021) (3)
- W-band direct detection radiometers using metamorphic HEMT technology (2011) (3)
- Ozone and UV assisted oxidation of InN surfaces (2008) (3)
- A Fully-Integrated W-Band I/Q-Down-Conversion MMIC for Use in Radio Astronomical Multi-Pixel Receivers (2020) (3)
- Manipulation of the In Situ Nitrogen‐Vacancy Doping Efficiency in CVD‐Grown Diamond (2022) (3)
- Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures (2006) (3)
- Detonations of Gallium Azides: A Simple Route to Hexagonal GaN Nanocrystals. (1998) (3)
- A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology (2012) (3)
- High-Q Anti-Series AlGaN/GaN High Electron-Mobility Varactor (2019) (3)
- Highly integrated switching calibration front-end MMIC with active loads for w-band radiometers (2012) (3)
- A balanced resistive 210 GHz mixer with 50 GHz IF bandwidth (2010) (3)
- Effect of Ge incorporation on stoichiometric composition of 3C‐SiC thin films grown on Si(111) substrates (2005) (3)
- Surface modifications of AlGaN/GaN sensors for water based nano- and picodroplets [chemical and biosensors] (2004) (3)
- Hafnium oxide passivation of InGaAs/InP heterostructure bipolar transistors by electron beam evaporation (2012) (3)
- Near‐UV LEDs for integrated InO‐based ozone sensors (2010) (3)
- Broadband 1.7–2.8 GHz high-efficiency (58%), high-power (43 dBm) Class-BJ GaN power amplifier including package engineering (2014) (3)
- Low noise amplifiers for MetOp-SG (2016) (3)
- Structural and optical properties of Si-doped (2000) (3)
- 2DEGs and 2DHGs Induced by Spontaneous and Piezoelectric Polarization in AlGaN/GaN Heterostructures (2000) (3)
- Aluminium nitride membranes with embedded buried idt electrodes for novel flexural plate wave devices (2015) (3)
- Admittance–voltage profiling of AlxGa1−xN/GaN heterostructures: Frequency dependence of capacitance and conductance (2015) (3)
- Metal organic chemical vapour deposition regrown large area GaN‐on‐GaN current aperture vertical electron transistors with high current capability (2021) (3)
- Plasma affected 2DEG properties on GaN/AlGaN/GaN HEMTs (2012) (2)
- GaN HFET MMICs with integrated Schottky-diode for highly efficient digital switch-mode power amplifiers at 2 GHz (2011) (2)
- A GaN-based Current Sense Amplifier for GaN HEMTs with Integrated Current Shunts (2020) (2)
- Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBE (2004) (2)
- Pt/GaN based Schottky diodes for gas sensing applications (2004) (2)
- Crystallographic Texture of Submicron Thin Aluminum Nitride Films on Molybdenum Electrode for Suspended Micro and Nanosystems (2013) (2)
- Fully Unstrained GaN on Thick AlN Layers for MEMS Application (2006) (2)
- Automatic extraction of analytical large-signal FET models with parameter estimation by function decomposition (2014) (2)
- High linearity active GaN-HEMT down-converter MMIC for E-band radar applications (2014) (2)
- Investigation of dielectric properties of multilayer structures consisting of homogeneous plastics and liquid solutions at 75–110 GHz (2015) (2)
- A GaN-on-Si-Based Logic, Driver and DC-DC Converter Circuit with Closed-Loop Peak Current-Mode Control (2019) (2)
- Terahertz monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication (2013) (2)
- Internally-packaged-matched continuous inverse class-FI wideband GaN HPA (2016) (2)
- Power limits of polarization-induced AlGaN/GaN HEMT's (2000) (2)
- Auger electron spectroscopy investigation of sputter induced altered layers in SiC by low energy sputter depth profiling and factor analysis (2003) (2)
- Spin‐Dependent Processes and Mg‐Acceptors in GaN Single Quantum Well Diodes and p‐Type GaN Films (1998) (2)
- Interface Effects on the Persistent Photoconductivity in Thin GaN and AlGaN Films (1998) (2)
- Voltage- and Temperature-Dependent Degradation of AIN/GaN High Electron Mobility Transistors (2018) (2)
- Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111) (2004) (2)
- Magnetic resonance investigations of defects in Ga14N and Ga15N (2000) (2)
- A dual-band UMTS/LTE highly power-efficient class-ABJ Doherty GaN PA (2015) (2)
- Reflectance Difference Spectroscopy Characterization of AlxGa1—xN‐Compound Layers (1999) (2)
- Radar system components to detect small and fast objects (2015) (2)
- Monolithic Integration of Inductive Components in a GaN-on-Si Technology (2020) (2)
- Dynamic Detection of Target-DNA with AlGaN/GaN High Electron Mobility Transistors☆ (2015) (2)
- Electron and hole accumulation in InN/InGaN heterostructures (2011) (2)
- Space charged region in GaN and InN nanocolumns investigated by atomic force microscopy (2008) (2)
- Determination of suitable mHEMT transistor dimensioning for power amplification at 210 GHz by comprehensive measurements (2010) (2)
- Ion beam synthesis of 3C–(Si1–xC1–y)Gex+y solid solutions (2005) (2)
- Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization‐doped 3D electron slabs in graded‐AlGaN (2003) (2)
- Resonant Sensors for Microfluidic Applications (2006) (2)
- Design and model studies for solid-state power amplification at 210 GHz (2011) (2)
- A Scalable Small-Signal and Noise Model for High-Electron-Mobility Transistors Working Down to Cryogenic Temperatures (2022) (2)
- A GaN-Based 10.1MHz Class-F-1 300 W Continuous Wave Amplifier Targeting Industrial Power Applications (2016) (2)
- Impact of Device Technology Processes on the Surface Properties and Biocompatibility of Group III Nitride Based Sensors (2006) (2)
- Compact quasi-optical focusing system for a 94 GHz FMCW radar (2014) (2)
- Preparation of defined structures on very thin foils for characterization of AFM probes (2007) (2)
- Signal generation and amplification up to 600 GHz using metamorphic HEMT technology (2013) (2)
- Spin-Dependent Transport in GaN Light Emitting Diodes (1995) (2)
- A Pseudo-Complementary GaN-Based Gate Driver with Reduced Static Losses (2019) (2)
- Active millimeter-wave imaging using a raster scanner (2009) (2)
- Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire (2003) (2)
- Low Energy Ion Modification of 3C-SiC Surfaces (2006) (2)
- Instabilities by Parasitic Substrate-Loop of GaN-on-Si HEMTs in Half-Bridges (2018) (2)
- Millimeter-Wave Monolithic Integrated Circuits and Modules for Safety and Security Applications (2012) (2)
- Sensing applications of micro- and nanoelectromechanical resonators (2007) (2)
- Characterization of quasi-optical focusing systems at W-band frequencies (2015) (2)
- Ultra‐thin InGaN photodetectors for standing wave interferometry (2008) (2)
- Millimeter-wave monolithic integrated circuits for imaging and remote sensing at 140, 200, and 300 GHz (2009) (2)
- Low-Power Differential Input to Single-Ended Output GaN RF-DAC for RF-Signal Generation (2021) (1)
- RF-Noise Model Extraction Procedure for Distributed Multiport Models (2019) (1)
- AlGaN/GaN lateral polarity heterostructures (2001) (1)
- High voltage GaN-based Schottky diodes in non-isolated LED buck converters (2016) (1)
- Growth of non-polar a -plane and cubic InN on r -plane sapphire by molecular beam epitaxy (2003) (1)
- Tight-Binding Simulation of an InGaN/GaN Quantum Well with indium Concentration Fluctuation (2003) (1)
- A novel functionalization of AlGaN/GaN-pH-Sensors for DNA-sensors (2009) (1)
- Dual-gate HEMT parameter extraction based on 2.5D multiport simulation of passive structures (2016) (1)
- “Anomalous” pseudodielectric function of GaN: Experiment, modelling and application to the study of surface properties (2006) (1)
- Analysis of GaN HEMTs for broadband high-power amplifier design (2011) (1)
- Analysis of 4-way divider MMICs in GaAs technology for H-band applications (2018) (1)
- Material characterization using a compact W-band ellipsometer (2016) (1)
- Effect of V/III ratio and growth pressure on surface and crystal quality of AlN grown on sapphire by metal-organic chemical vapor deposition (2022) (1)
- With electroluminescence microcopy towards more reliable AlGaN/GaN transistors (2015) (1)
- The Metamorphic HEMT and its Applications in Remote Sensing (2009) (1)
- Temperature-dependent electric fields in GaN Schottky diodes studied by electroreflectance (2003) (1)
- Millimeter- and submillimeter-wave monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication (2013) (1)
- Poly-silicon CMOS compatible gate module for AlGaN/GaN-on-silicon MIS-HEMTs for power electronics applications (2016) (1)
- Broadband 1.7–2.8 GHz high-efficiency (58%), high-power (43 dBm) Class-BJ GaN power amplifier including package engineering (2014) (1)
- Wireless multi-gigabit data transmission using active MMIC components at 220 GHz (2012) (1)
- A novel broadband high-power source-pull/ load-pull concept for the HF- to UHF-range (2015) (1)
- Processing of novel SiC and group III‐nitride based micro‐ and nanomechanical devices (2005) (1)
- Novel Method for Extracting Material Constants of Epitaxial Wurtzite AlScN Films on Sapphire Using Higher Order Surface Acoustic Wave Modes (2020) (1)
- State Dependency, Low-Frequency Dispersion, and Thermal Effects in Microwave III-V HEMTs (2018) (1)
- High-Power Density DC-DC Converters Using Highly-Integrated Half-Bridge GaN ICs (2021) (1)
- Transport Properties of 2DEGs in AlGaN/GaN Heterostructures: Spin Splitting and Occupation of Higher Subbands (2002) (1)
- Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress (2020) (1)
- Two‐Dimensional Electron Gas Effects on the Photoluminescence from a Nonintentionally Doped AlGaN/GaN Heterojunction (2003) (1)
- MMICs and Mixed-Signal ICs Based on III/V Technology for Highest Frequencies and Data Rates (2009) (1)
- Characterization of a DC to 40 GHz SPDT switch based on GaAs mHEMT technology at cryogenic temperature (2013) (1)
- A novel class of sensors for system integrative concepts in biotechnological applications. (2004) (1)
- Integral transform and state modeling of 0.1 µm AlGaN/GaN HEMTs for pulsed-RF and CW operation (2013) (1)
- Self organization and properties of Black Silicon (2009) (1)
- AUGER ELECTRON SPECTROSCOPY OF SILICON CARBIDE (2004) (1)
- Doping efficiency and segregation of Si in AlN grown by molecular beam epitaxy (2006) (1)
- 32nd International Symposium on Compound Semiconductors (ISCS-2005), Rust, Germany, 18-22 September 2005 (2006) (1)
- An integrated 12 Gbps switch-mode driver MMIC with 5 VPP for digital transmitters in 100 nm GaN technology (2012) (1)
- Study of Exciton Dead Layers in GaN Schottky Diodes with N and Ga‐Face Polarity (2002) (1)
- Surface Passivation of InGaAs/InP HBTs Using Atomic Layer Deposited Al2O3 (2011) (1)
- Growth of 3C-(Si1-xC1-y)Gex+y Layers on 4H-SiC by Molecular Beam Epitaxy (2005) (1)
- Excitonic Transitions in Homoepitaxial GaN (2001) (1)
- TRESR study of the photo-induced electron transfer in P3DDT/maleic anhydride blend in THF solution under UV flash photolysis (2008) (1)
- SEM-EBIC Study of Defects in Epitaxial AlGaN Layers (1998) (1)
- Transport Properties of InN (2009) (1)
- Development of AlGaN/GaN HEMTs with efficiencies above 60% up to 100 V for next generation mobile communication 100 W power bars (2009) (1)
- Broadband MMIC tuners dedicated to noise parameter measurements at cryogenic temperatures (2012) (1)
- Processing of Nanoscale Gaps for Boron-doped Nanocrystalline Diamond Based MEMS☆ (2014) (1)
- Publisher’s Note: Spin resonance investigations ofMn2+in wurtzite GaN and AlN films [Phys. Rev. B67, 165215 (2003)] (2003) (1)
- RF-Noise Modeling of InGaAs Metamorphic HEMTs and MOSFETs (2018) (1)
- Photoquenching Of Persistent Photoconductivity In N-Type GaN (1997) (1)
- Structure of cubic polytype indium nitride layers on top of modified sapphire substrates (2008) (1)
- A Novel 32-Gb/s 5.6-Vpp Digital-to-Analog Converter in 100 nm GaN Technology for 5G Signal Generation (2020) (1)
- Dynamic Load Modulated Low-Voltage GaN PA Using Novel Low-Loss GaN Varactors (2018) (1)
- Determining Elastic Constants of AlScN Films on Silicon Substrates by Laser Ultrasonics (2020) (1)
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- Publisher's Note: Anisotropy of the momentum matrix element, dichroism, and conduction-band dispersion relation of wurtzite semiconductors [Phys. Rev. B78, 035207 (2008)] (2008) (1)
- Influence of alloying and structural transition on the directional elastic and isotropic thermodynamic properties of wurtzite and layered hexagonal ScxAl1−xN crystals (2022) (1)
- SiC-Based MOSFETs for Harsh Environment Emissions Sensors (2006) (1)
- Tunable GaAs-based high power tapered amplifiers in an external cavity setup (2009) (1)
- Growth of quaternary AlInGaN/GaN Heterostructures by Plasma Induced Molecular Beam Epitaxy with high In Concentration (2000) (1)
- On the origin of the turn-on voltage drop of GaN-based current aperture vertical electron transistors (2022) (1)
- Mechanisms and rate determining steps in plasma induced high rate CVD of silicon an germanium: similarities and differences (1992) (1)
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- Investigation of GaN-on-Si and GaN-on-SOI Substrate Capacitances for Discrete and Monolithic Half-Bridges (2021) (1)
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- Rayleigh waves in nonpolar Al0.7Sc0.3N(11 2¯0) films with enhanced electromechanical coupling and quality factor (2022) (1)
- W-band active loads and switching front-end MMICs for radiometer calibration (2013) (1)
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- InN nanocolumns J. Grandal, M. A. Sa´nchez-Garcı´a, E. Calleja, S. Lazic´, E. Gallardo, J. M. Calleja, (2009) (0)
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- Characterization of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al2O3(0001) Studied by TEM (1997) (0)
- Tuning of the optical properties of In-rich InxGa1−xN (x=0.82−0.49) alloys by light-ion irradiation at low energy (2013) (0)
- AlGaN/GaN power amplifiers for ISM frequency applications (2011) (0)
- Improvement of Plasma-Assisted Molecular Beam Epitaxial Growth of Group III Nitrides on Si Controlling Radio Frequency Discharge Modes and Irradiation of Nitrogen Flux (2016) (0)
- Estimation of the piezoelectric properties of thin AlN layers for MEMS applications (2010) (0)
- Annealing kinetics of hydrogenated As acceptors in MOVPE grown CdTe (2017) (0)
- Optical constants of AlGaN grown by molecular beam epitaxy (1998) (0)
- Pt Schottky contacts on Ga- and N-face surfaces of free-standing GaN (2001) (0)
- Leakage mechanism in Al x Ga1−x N/GaN heterostructures with AlN interlayer (2021) (0)
- Pyroelectric A1GaN/GaN HEMTs for ion-, gas- and Polar-Liquid Sensors (2004) (0)
- High-Power Asymmetrical Three-Way GaN Doherty Power Amplifier at C-Band Frequencies (2018) (0)
- Investigation of the structural and optical properties of free-standing GaN grown by HVPE (2016) (0)
- 9.4 Quantum cascade lasers (2011) (0)
- Combining external cavity quantum cascade lasers and MOEMS technology: An approach for miniaturization and fast wavelength scanning (2014) (0)
- Non-Polar a-plane AlScN($11\overline{2}0$) Thin Film Based SAW Resonators with Significantly Improved Electromechanical Coupling (2020) (0)
- High-Power Asymmetrical Three-Way GaN Doherty Power Amplifier at C-Band Frequencies (2018) (0)
- Atomic Layer Epitaxy of (Si1-xC1-y)Gex+y Layers on 4H-SiC (2006) (0)
- S1759078718000582jra 666..673 (2018) (0)
- Bias-free lateral terahertz emitters—A simulation study (2015) (0)
- GaN-based millimeter-wave monolithic integrated circuits (2012) (0)
- A new high ultraviolet sensitivity FTO-GaP Schottky photodiode fabricated by spray pyrolysis (2017) (0)
- ATOMIC LAYER DEPOSITED PLATINUM AS A SENSOR MATERIAL: UNIFORMITY, 1/F NOISE, AND YOUNG’S MODULUS (2014) (0)
- Development of a reference field for a NPM-machine (2010) (0)
- Publisher's Note: “Influence of structural properties on the ferroelectric behavior of hexagonal AlScN” [J. Appl. Phys. 132, 114101 (2022)] (2022) (0)
- Influence of Dry Etch Conditions on the Performance of Recessed Gate GaN/AlGaN HEMTs (2010) (0)
- Tuning of electrical properties of InxOy thin films grown by MOCVD for different applications (2006) (0)
- Composition measurements of group-III nitride ternary and quaternary compound nanostructures by AES (2009) (0)
- Microstructural Characterization of Closely-Lattice-Matched AlIn(Ga)N Alloys for High Electron Mobility Transistors (2011) (0)
- Post drain-stress behavior of AlGaN/GaN-on-Si MIS-HEMTs (2016) (0)
- Micro- and nanomechanical resonators for sensing applications (2009) (0)
- Characterisation of Al x Ga 1-x N Films Prepared by Plasma Induced Molecular Beam Epitaxy on C-Plane Sapphire (1997) (0)
- Strain relaxation and void reduction in SiC on Si by Ge predeposition (2005) (0)
- Semiconductor heterointerfaces, continuity conditions, heteroepitaxy and materials physics (2016) (0)
- Gate Recessed AlGaN/GaN based Normally-Off HEMTs for High Frequency Operation (2008) (0)
- f the graphene – graphite ratio of graphene powder by Raman 2 D band symmetry analysis † (2019) (0)
- Complex interaction of passive multiport structures and their description by separate discrete models (2016) (0)
- Broadband absorption and emission millimeter-wave spectroscopy between 220 and 325 GHz (2013) (0)
- Enabling compact MMIC-based frontends for millimeter-wave imaging radar and radiometry at 94 and 210 GHz (2008) (0)
- TEM investigation of sputtered and epitaxial grown indium oxide layers for ozone sensors (2007) (0)
- The influence of the Al-content on the optical gain in AlGaN heterostructures (1998) (0)
- Improved Aluminum Nitride Thin Films Grown By Mocvd From Tritertiarybutylaluminum And Ammonia (1996) (0)
- Functional Nanowires: Synthesis, Characterization and Applications (2014) (0)
- The First Monomeric, Volatile Bis-Azide Single-Source Precursor to Gallium Nitride Thin Films. (1996) (0)
- AlGaN/GaN Based Heterostructures for MEMS and NEMS Applications (2010) (0)
- In-Plane Oriented Stacks of c-AlScN/Mo (110) for BAW Resonators Grown by Magnetron Sputter Epitaxy (2020) (0)
- GENERATION-RECOMBINATION NOISE IN Si-DOPED AlN (2001) (0)
- Electrical and optical properties of In2O3 nanoparticles prepared by MOCVD (2008) (0)
- Narrow linewidth 2 µm GaSb-based semiconductor disk laser (2011) (0)
- Ion-sensitive semiconductor sensors with HEMT structure (2000) (0)
- A Cryogenic On-Chip Noise Measurement Procedure With ±1.4-K Measurement Uncertainty (2022) (0)
- Recent developments in GaN HEMTs and MMICs for high power electronics (2013) (0)
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What Schools Are Affiliated With Oliver Ambacher?
Oliver Ambacher is affiliated with the following schools:
