Osamu Wada
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Physics
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(Suggest an Edit or Addition)Osamu Wada's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Ultrafast intersubband relaxation (⩽150 fs) in AlGaN/GaN multiple quantum wells (2000) (193)
- Temperature Dependence of GaAs1-xBix Band Gap Studied by Photoreflectance Spectroscopy (2003) (180)
- Femtosecond all-optical devices for ultrafast communication and signal processing (2004) (178)
- Low dark current GaAs metal-semiconductor-metal (MSM) photodiodes using WSi x contacts (1986) (158)
- Nonlinear gain dynamics in quantum-dot optical amplifiers and its application to optical communication devices (2001) (128)
- Recent progress in optoelectric integrated circuits (OEIC's) (1986) (105)
- Nonlinear processes responsible for nondegenerate four-wave mixing in quantum-dot optical amplifiers (2000) (103)
- Very high speed GaInAs metal‐semiconductor‐metal photodiode incorporating an AlInAs/GaInAs graded superlattice (1989) (93)
- Electron spin relaxation in InGaAs/InP multiple-quantum wells (1997) (83)
- Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots (2002) (81)
- Application of spectral-hole burning in the inhomogeneously broadened gain of self-assembled quantum dots to a multiwavelength-channel nonlinear optical device (2000) (77)
- Artificial control of optical gain polarization by stacking quantum dot layers (2006) (72)
- Reliability of high radiance InGaAsP/InP LED́s operating in the 1.2-1.3 µm wavelength (1981) (72)
- Room‐temperature electron spin dynamics in GaAs/AlGaAs quantum wells (1996) (72)
- 1.55-μm picosecond all-optical switching by using intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells (2002) (71)
- Design of impurity band-based photonic crystal waveguides and delay lines for ultrashort optical pulses (2001) (71)
- Monolithic four-channel photodiode/amplifier receiver array integrated on a GaAs substrate (1986) (67)
- InP Schottky contacts with increased barrier height (1982) (65)
- Interaction of deep-level traps with the lowest and upper conduction minima in InP (1980) (63)
- Nonlinearity and recovery time of 1.55 /spl mu/m intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells (2001) (62)
- Monolithic integration of a metal—semiconductor—metal photodiode and a GaAs preamplifier (1984) (60)
- Ion‐Beam Etching of InP and Its Application to the Fabrication of High Radiance InGaAsP / InP Light Emitting Diodes (1984) (58)
- Low leakage nearly ideal Schottky barriers to n-InP (1978) (55)
- Thermal reaction of Ti evaporated on GaAs (1976) (54)
- Direct observation of electron leakage in InGaAsP/InP double heterostructure (1982) (52)
- Control of optical polarization anisotropy in edge emitting luminescence of InAs/GaAs self-assembled quantum dots (2004) (51)
- Ultrafast all-optical spin polarization switch using quantum-well etalon (1996) (51)
- Ohmic Contacts to p-GaAs with Au/Zn/Au Structure (1980) (50)
- Ar ion-beam etching characteristics and damage production in InP (1984) (50)
- Leveraging deep photonic band gaps in photonic crystal impurity bands (2001) (50)
- Determination of deep‐level energy and density profiles in inhomogeneous semiconductors (1973) (45)
- Impedance matching for enhanced waveguide/photodetector integration (1989) (45)
- Intersubband transitions at 1.3 and 1.55 /spl mu/m in a novel coupled InGaAs-AlAsSb double-quantum-well structure (1999) (44)
- Ultrafast all-optical switching at 1.3 /spl mu/m/1.55 /spl mu/m using novel InGaAs-AlAsSb-InP coupled double quantum well structure for intersubband transitions (1999) (44)
- Electron tomography of embedded semiconductor quantum dot (2008) (42)
- Photonic switching devices based on semiconductor nano-structures (2013) (42)
- Very low threshold current ridge-waveguide AlGaAs/GaAs single-quantum-well lasers (1985) (41)
- Optical and magnetic properties in epitaxial GdN thin films (2011) (41)
- Non-Drude Behavior in Indium-Tin-Oxide Nanowhiskers and Thin Films Investigated by Transmission and Reflection THz Time-Domain Spectroscopy (2013) (40)
- Planar, compatible OEIC's based on multiquantum well structures (1989) (39)
- Optoelectronic Integration: Physics, Technology and Applications (1994) (39)
- Photoluminescence characteristics of quantum dots with electronic states interconnected along growth direction (2008) (38)
- High radiance InGaAsP/InP lensed LED́s for optical communication systems at 1.2-1.3 µm (1981) (37)
- Monolithic pinHEMT receiver for long wavelength optical communications (1988) (36)
- Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity (2009) (36)
- A monolithically integrated AlGaAs/GaAs p-i-n/FET Photoreceiver by MOCVD (1983) (35)
- InP-based materials and devices : physics and technology (1999) (35)
- FABRICATION AND FEMTOSECOND OPTICAL RESPONSE OF LANGMUIR-BLODGETT FILMS WITH TWO-DIMENSIONAL J-AGGREGATES (1999) (35)
- Electron and hole impact ionization rates in InP/Ga 0.47 In 0.53 As superlattice (1986) (35)
- AlGaAs/GaAs microcleaved facet (MCF) laser monolithically integrated with photodiode (1982) (34)
- Optoelectronic integration based on GaAs material (1988) (33)
- Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots (1995) (33)
- Thermal reaction of gold metallization on InP (1985) (32)
- Impurity doping in self-assembled InAs/GaAs quantum dots by selection of growth steps (2010) (32)
- Hybrid Quantum Well/Quantum Dot Structure for Broad Spectral Bandwidth Emitters (2013) (32)
- A monolithic four-channel photoreceiver integrated on a GaAs substrate using metal-semiconductor-metal photodiodes and FET's (1985) (31)
- An Improved Method of Determining Deep Impurity Levels and Profiles in Semiconductors (1974) (30)
- Bound exciton states of isoelectronic centers in GaAs:N grown by an atomically controlled doping technique (2006) (30)
- Very low threshold current GaAs--AlGaAs GRIN-SCH lasers grown by MBE for OEIC applications (1984) (29)
- Arsenic Pressure Dependence of Interdiffusion of AlGaAs/GaAs Interface in Quantum Well (1987) (29)
- Efficient fiber coupling to low-loss diluted multiple quantum well optical waveguides (1989) (29)
- High-performance, high-reliability InP/GaInAS p-i-n photodiodes and flip-chip integrated receivers for lightwave communications (1991) (29)
- Low-loss monolithic integration of balanced twin-photodetectors with a 3 dB waveguide coupler for coherent lightwave receivers (1990) (29)
- Polarization-Insensitive Quantum Dot Semiconductor Optical Amplifiers Using Strain-Controlled Columnar Quantum Dots (2012) (29)
- Observation of sub-100-fs optical response from spin-coated films of squarylium dye J aggregates (2001) (29)
- High‐speed monolithically integrated GaAs photoreceiver using a metal‐semiconductor‐metal photodiode (1985) (29)
- Monolithic integration of a low threshold current quantum well laser and a driver circuit on a GaAs substrate (1985) (28)
- Monolithic integration of a photodiode and a field‐effect transistor on a GaAs substrate by molecular beam epitaxy (1983) (28)
- GaAs optoelectronic integrated receiver with high-output fast-response characteristics (1987) (28)
- Intersubband transitions in InGaAs/AlAs coupled double quantum well structures for multi-wavelength all-optical switching (1998) (28)
- AlGaAs/GaAs Lateral Current Injection (LCI)-MQW Laser Using Impurity-Induced Disordering (1987) (27)
- THz conductivities of indium-tin-oxide nanowhiskers as a graded-refractive-index structure. (2012) (26)
- A Dual-Pass High Current Density Resonant Tunneling Diode for Terahertz Wave Applications (2015) (26)
- Polarization control of electroluminescence from vertically stacked InAs/GaAs quantum dots (2010) (26)
- Femtosecond semiconductor-based optoelectronic devices for optical-communication systems (2000) (25)
- Monolithic integration of a pin photodiode and a field‐effect transistor using a new fabrication technique—graded step process (1985) (25)
- AlGaAs/GaAs p‐i‐n photodiode/preamplifier monolithic photoreceiver integrated on a semi‐insulating GaAs substrate (1985) (25)
- Optical power transfer in vertically integrated impedance-matched waveguide/photodetectors: physics and implications for diode-length reduction. (1991) (25)
- AlGaAs/GaAs lateral current injection multiquantum well (LCI-MQW) laser using impurity-induced disordering (1988) (25)
- GaInAs pin photodiode/GaAs preamplifier photoreceiver for gigabit-rate communications systems using flip-chip bonding techniques (1988) (25)
- Integrated waveguide/photodiodes using vertical impedance matching (1990) (24)
- Intersubband transitions and ultrafast all-optical modulation using multiple InGaAs-AlAsSb-InP coupled double-quantum-well structures (2001) (24)
- Optical reflectance study of the wetting layers in (In, Ga)As self-assembled quantum dot growth on GaAs (001) (2002) (24)
- AlGaSb avalanche photodiode exhibiting a very low excess noise factor (1989) (23)
- Temperature-dependent carrier tunneling for self-assembled InAs/GaAs quantum dots with a GaAsN quantum well injector (2010) (23)
- Observation of phase shifts in a vertical cavity quantum dot switch (2011) (23)
- GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures (2015) (22)
- Large χ(3) of squarylium dye J aggregates measured using the Z-scan technique (2001) (22)
- Easily manufactured high-speed back-illuminated GaInAs/InP p-i-n photodiode (1991) (22)
- 4*4 OEIC switch module using GaAs substrate (1988) (22)
- Optoelectronic integrated four-channel transmitter array incorporating AlGaAs/GaAs quantum-well lasers (1989) (21)
- High-speed monolithic GaInAs pinFET (1988) (21)
- Real time analysis of self-assembled InAs/GaAs quantum dot growth by probing reflection high-energy electron diffraction chevron image (2008) (21)
- Small-junction-area GaInAs/InP pin photodiode with monolithic microlens (1988) (20)
- Recent Progress In Optoelectronic Integrated Circuits (1989) (20)
- Control of Zn Doping for Growth of InP pn Junction by Liquid Phase Epitaxy (1980) (20)
- Monolithic integration of an AlGaAs/GaAs multiquantum well laser and GaAs metal-semiconductor field-effect transistors on a semi-insulating GaAs substrate by molecular beam epitaxy (1984) (19)
- Four‐channel AlGaAs/GaAs optoelectronic integrated transmitter array (1986) (19)
- Capture, relaxation, and recombination in two-dimensional quantum-dot superlattices (2000) (19)
- Picosecond electron-spin relaxation in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells (1999) (19)
- Monte Carlo calculations of diffusion coefficient of hot electrons in n‐type GaAs (1974) (19)
- Fine structure splitting of isoelectronic bound excitons in nitrogen-doped GaAs (2008) (19)
- Compact transmitter and receiver modules with optoelectronic-integrated circuits for optical LAN's (1986) (19)
- Deep‐level traps and the conduction‐band structure of InP (1978) (19)
- Band-gap enhanced carrier heating in InGaAsP/InP double heterostructure light-emitting diodes (1982) (19)
- Recent Progress in Semiconductor-Based Photonic Signal-Processing Devices (2011) (19)
- Spin-coated Films of Squarylium Dye J-Aggregates Exhibiting Ultrafast Optical Responses (2000) (19)
- ADVANCES IN OPTOELECTRONIC INTEGRATION (1990) (18)
- Preferential reaction and stability of the Au‐Sn/Pt system: Metallization structure for flip‐chip integration (1991) (18)
- Detailed Design and Characterization of All-Optical Switches Based on InAs/GaAs Quantum Dots in a Vertical Cavity (2010) (18)
- Absorption saturation of near-infrared intersubband transition in lattice-matched InGaAs/AlAsSb quantum wells☆ (2000) (18)
- Optimum design of delta -doped InGaAs avalanche photodiode by using quasi-ionization rates (1990) (17)
- Enhancement of interband optical nonlinearity by manipulation of intersubband transitions in an undoped semiconductor quantum well (1999) (17)
- Planar, embedded InP/GaInAs p‐i‐n photodiode with very high‐speed response characteristics (1986) (17)
- High-Brightness Electron Emission from Flexible Carbon Nanotube/Elastomer Nanocomposite Sheets (2006) (16)
- Long-wavelength emission from nitridized InAs quantum dots (2003) (16)
- Monolithic PIN/preamplifier circuit integrated on a GaAs substrate (1983) (16)
- High-speed monolithic GaInAs twin-pin photodiode for balanced optical coherent receivers (1989) (16)
- Monolithic integration of an AlGaAs/GaAs DH LED with a GaAs FET driver (1982) (15)
- An AlGaAs/GaAs short-cavity laser and its monolithic integration using microcleaved facets (MCF) process (1984) (15)
- Extended wavelength emission to 1.3μm in nitrided InAs∕GaAs self-assembled quantum dots (2005) (15)
- GRIN-SCH SQW laser/photodiode array by improved microcleaved facet process (1985) (15)
- Anisotropic magneto-optical effects in one-dimensional diluted magnetic semiconductors (2006) (15)
- Narrow-band deep-ultraviolet light emitting device using Al1−xGdxN (2008) (15)
- Fabrication of monolithic twin-GaInAs pin photodiode for balanced dual-detector optical coherent receivers (1988) (15)
- Continuous-wave operation of lateral current injection multiquantum-well laser (1988) (14)
- Twisted Nematic Liquid-Crystal-Based Terahertz Phase Shifter using Pristine PEDOT: PSS Transparent Conducting Electrodes (2019) (14)
- Ultrafast all-optical modulation of interband-light pulses by ultrashort intersubband light pulses in semiconductor quantum wells (1999) (14)
- Broadband light sources using InAs quantum dots with InGaAs strain‐reducing layers (2011) (13)
- Performance and reliability of high radiance InGaAsP/InP DH LED́s operating in the 1.15-1.5 µm wavelength region (1982) (13)
- High-speed monolithic coherent optical receiver integrated on InP substrate (1991) (13)
- Monte Carlo Simulation of Gunn Domain Formations (1975) (13)
- Evaluation of Deep Levels in Semiconductors Using Field Effect Transconductance (1975) (13)
- Room temperature simultaneous three-state lasing in hybrid quantum well/quantum dot laser (2012) (13)
- Dual chopped photoreflectance spectroscopy for nondestructive characterization of semiconductors and semiconductor nanostructures. (2008) (12)
- Determination of deep electron traps in GaAs by time-resolved capacitance measurement (1977) (12)
- Valley current characterization of high current density resonant tunnelling diodes for terahertz-wave applications (2017) (12)
- Temperature dependence of photoluminescence characteristics of excitons in stacked quantum dots and quantum dot chains (2010) (12)
- Large improvement in intersubband saturation intensity in InGaAs/AlAsSb quantum well (2001) (12)
- Absorption Saturation of Intersubband Transition in InGaAs/AlAsSb Quantum Well Characterized by Absorption Spectral Analysis (2001) (12)
- Narrowband ultraviolet field-emission device using Gd-doped AlN (2009) (12)
- Ultrafast nonlinear processes in quantum-dot optical amplifiers (2001) (12)
- High-refractive index, low-loss oxyfluorosilicate glasses for sub-THz and millimeter wave applications (2019) (12)
- Automatic Generation of Noise-Like or Mode-Locked Pulses in an Ytterbium-Doped Fiber Laser by Using Two-Photon-Induced Current for Feedback (2018) (11)
- Multidirectional observation of an embedded quantum dot (2007) (11)
- AlGaAs/GaAs multiquantum-well (MQW) laser applied to monolithic integration with FET driver (1983) (11)
- Gigabit rate Gunn-effect shift register (1975) (11)
- High-reliability flip-chip GaInAs/InP pin photodiode (1990) (11)
- High-speed flip-chip InP/InGaAs avalanche photodiodes with ultralow capacitance and large gain-bandwidth products (1991) (10)
- Electron Spin Relaxation Dynamics in InGaAs/InP Multiple-Quantum Wells (1998) (10)
- Integrated waveguide-photodiodes with large bandwidth and high external quantum efficiency (1990) (10)
- Engineering Photonic Crystal Impurity Bands for Waveguides, All-Optical Switches and Optical Delay Lines (2002) (10)
- Effects of two-photon absorption on terahertz radiation generated by femtosecond-laser excited photoconductive antennas. (2011) (10)
- Anisotropic magneto-optical effects in (CdTe)0.5(Cd0.75Mn0.25Te)0.5 tilted superlattices (2004) (10)
- Slope angle influence on silicon doping in AlGaAs/GaAs MBE-grown on stepped surface of (100) GaAs substrate (1987) (10)
- Ultrashort-pulse-controlled all-optical modulation by interband and intersubband transitions in doped quantum wells. (1998) (10)
- A novel planarization technique for optoelectronic integrated circuits and its application to a monolithic AlGaAs/GaAs p-i-n FET (1987) (10)
- Thermal Stability of Au-Sn/Near Noble Metal Barrier Metallization Systems (1991) (10)
- Bright electron emission from Si-doped AlN thin films (2007) (10)
- An Al/sub x/Ga/sub 1-x/Sb avalanche photodiode with a gain bandwidth product of 90 GHz (1990) (9)
- Analysis of Impact Ionization Phenomena in InP by Monte Carlo Simulation (1986) (9)
- Optical Polarization Properties of InAs/GaAs Quantum Dot Semiconductor Optical Amplifier (2004) (9)
- Simple theoretical model for the temperature stability of InAs/GaAs self-assembled quantum dot lasers with different p-type modulation doping levels (2008) (9)
- Twisted Nematic Liquid Crystal Based Terahertz Phase Shifter With Crossed Indium Tin Oxide Finger Type Electrodes (2019) (9)
- Optoelectronic integrated AlGaAs/GaAs p‐i‐n/field‐effect transistor with an embedded, planar p‐i‐n photodiode (1986) (9)
- Polarization controlled edge emission from columnar InAs/GaAs self‐assembled quantum dots (2003) (9)
- 400 Mbit/s transmission experiment using two monolithic optoelectronic chips (1985) (9)
- Low-loss optical directional coupler on InP (1989) (8)
- High refractive index properties of oxyfluorosilicate glasses and a unified dielectric model of silicate oxide glasses in the sub-terahertz frequency region (2020) (8)
- Photoluminescence Intensity in InGaAsP/InP Double-Heterostructures (1982) (8)
- The Edge Overgrowth in Selective Deposition of GaAs (1972) (8)
- Optical and ferromagnetic properties of GdN thin films (2011) (7)
- Photoluminescence dynamics of coupled quantum dots (2008) (7)
- Femtosecond two-dimensional serial-to-parallel pulse converter using a squarylium dye J-aggregate film (2001) (7)
- An Improved Technique for Fabricating High Quantum Efficiency Ridge Waveguide AlGaAs/GaAs Quantum Well Lasers (1986) (7)
- Monolithic GaInAs quad-p-i-n photodiodes for polarization-diversity optical receivers (1991) (7)
- Formation of extended states in disordered two-dimensional In0.4Ga0.6As/GaAs(311)B quantum dot superlattices (2000) (7)
- Extremely uniform GaAs-AlGaAs heterostructure layers with high optical quality by molecular beam epitaxy (1983) (7)
- Ultrafast all optical modulation based on intersubband transition in semiconductor quantum wells (2001) (7)
- Electric-field control in planar Gunn-effect device with Schottky-barrier anode (1976) (7)
- Measurement of the impact ionization rates in Al0.06Ga0.94Sb (1990) (7)
- High-speed response characteristics of GaAs optoelectronic integrated receivers (1986) (7)
- Bound biexciton luminescence in nitrogen δ‐doped GaAs (2011) (7)
- A New Fabrication Technique for Optoelectronic Integrated Circuits (OEIC's) — The Graded‐Step Process — Applied to the Fabrication of AlGaAs / GaAs PIN/FET and PIN/Amplifier Photoreceivers (1985) (7)
- Noise characteristics of GaAs metal-semiconductor-metal photodiodes (1988) (6)
- Sub-THz wave generation based on a dual wavelength microsquare laser (2017) (6)
- Systematic characterization of THz dielectric properties of multi-component glasses using the unified oscillator model (2021) (6)
- Optimized design and fabrication of high-speed and high-radiance InGaAsP/InP DH LED in the 1-µm wavelength region (1982) (6)
- Bend performance on fibre-matched optical waveguides on InP (1990) (6)
- Planar structure AlGaAs/GaAs pin photodiode grown by MOCVD (1983) (6)
- Ultrafast intersubband transitions in InGaAs/AlAs coupled double quantum well structures for near-infrared all-optical switching (1997) (6)
- Intersubband transition in InGaAs/AlAsSb/InP coupled double quantum well structures optimised for communication wavelength operation (2000) (6)
- Dephasing time characterization of InAs quantum dots by four-wave mixing measurement (2002) (6)
- Monolithic 1×4 Array of Uniform Radiance AlGaAs–GaAs LED's Grown by Molecular Beam Epitaxy (1982) (6)
- Invited Paper Recent Progress In Optoelectronic Integrated Circuits (OEICs) (1987) (6)
- Low-drive-current, high-efficiency AlGaAs/GaAs SQW laser (1987) (6)
- All-optical switching using ultrafast intersubband transitions in InGaAs/AlAsSb coupled triple quantum well structures (1999) (5)
- Impact ionization rates of holes in AlxGa1−xSb (1991) (5)
- Monolithic integration of a double heterostructure light‐emitting diode and a field‐effect transistor amplifier using molecular beam grown AlGaAs/GaAs (1983) (5)
- Integrated optical interconnections (1992) (5)
- Flexible Field Emission Device Using Carbon Nanofiber Nanocomposite Sheet (2008) (5)
- Planar embedded InP/GaInAs p-i-n photodiode for very high-speed operation (1987) (5)
- Ultrafast All-Optical Control of Excitons Confined in GaAs Thin Films (2008) (5)
- An approach to determining impact ionization rates in semiconductor junctions (1987) (5)
- OEIC Transmitter Fabricated by Planar Integration Process (1986) (5)
- GaAs optoelectronic integrated receiver array exhibiting high-speed response and little crosstalk (1986) (5)
- Fast-response PIN/Preamplifier photoreceiver monolithically integrated on a GaAs substrate (1984) (5)
- Reliable Metallization System for Flip-Chip Optoelectronic Integrated Circuits (1992) (5)
- Photoluminescence Characteristics of InAs Quantum Dots Grown by STM/MBE Site-Control Technique (2001) (5)
- Optoelectronic Integration - Overview (1994) (5)
- Effects of indium segregation on optical properties of nitrogen-doped InAs/GaAs quantum dots (2008) (5)
- Vertically stacked InAs quantum dots for polarization-independent semiconductor optical amplifiers (2010) (5)
- Atomically controlled doping of nitrogen on GaAs(001) surfaces (2007) (5)
- Fourier transformed photoreflectance characterization of interface electric fields in GaAs/GaInP heterojunction bipolar transistor wafers (2003) (4)
- Very low saturation intensity and ultrafast response of 1.5 /spl mu/m intersubband absorption in n-doped InGaAs/AlAsSb MQW (2000) (4)
- AlGaAs/GaAs Monolithic LED/Amplifier Circuit Fabricated by Molecular Beam Epitaxy (1983) (4)
- Indium phosphide-based femtosecond devices for ultrahigh throughput communications and signal-processing systems (1999) (4)
- The Effect of Heat Treatment on Al-GaAs Schottky Barriers (1973) (4)
- Saturation of Förster resonance energy transfer between two optically nonlinear cyanine dyes of small Stokes shift energies in polymer thin films (2011) (4)
- Polarisation-dependent modal properties of diluted multiple-quantum-well optical waveguides (1989) (4)
- Femtosecond Semiconductor-Based Optoelectonic Devices for Optical Communications and Signal-Processing Systems (1999) (4)
- Advances in InP-based optoelectronic devices and circuits for optical communication, interconnection and signal processing (1997) (4)
- Reliable Metallization for Inp-Based Devices and Oeic's (1990) (4)
- Process for GaAs Monolithic Integration Applied to Gunn‐Effect Logic Circuits (1976) (4)
- Strain effects on photoluminescence polarization of InAs/GaAs self‐assembled quantum dots (2003) (4)
- High performance ridge-waveguide AlGaAs/GaAs multiquantum-well lasers grown by molecular beam epitaxy (1982) (4)
- Intraband relaxation process in highly stacked quantum dots (2011) (4)
- A new fabricating method of planar Gunn-effect devices and integrated circuits (1976) (3)
- Magnetophotoluminescence study of the Ga0.5In0.5P/GaAs heterointerface with a ordering-induced two-dimensional electron gas (2002) (3)
- High speed response InGaAsP/InP DH LED's in the 1 µm wavelength region (1982) (3)
- Vertical stacking of InAs quantum dots for polarization-insensitive semiconductor optical amplifiers (2010) (3)
- Advances in III–V semiconductor photonics: Nanostructures and integrated chips (2013) (3)
- Interrelationship among dielectric constant, energy band parameters and ionicity in multi-component oxide glasses revealed by optical- and THz-band spectroscopy (2021) (3)
- Efficient All-Optical Interband Light Modulation by Ultrafast Manipulation of Intersubband Transitions in an Asymmetric Quantum Well* (1999) (3)
- Anisotropic magneto-optical effects in CdTe/Cd 0.75 Mn 0.25 Te quantum wire structures (2008) (3)
- Dephasing of Excitonic Polaritons Confined in GaAs Thin Films (2011) (3)
- Electron Spin Relaxation in GaAs/AlGaAs Quantum Wires Analyzed by Transient Photoluminescence (1999) (3)
- Propagation velocity of excitonic polaritons confined in GaAs thin films (2011) (3)
- Ultrafast all-optical modulation by near-infrared intersubband transition in n-doped InGaAs/AlAsSb quantum wells (2001) (3)
- Gain-bandwidth product of AlGaSb avalanche photodiodes analyzed by using equivalent multiplication region method (1989) (3)
- Flip-chip InGaAs avalanche photodiode with ultra low capacitance and large gain-bandwidth product (1991) (3)
- Femtosecond all-optical devices for tera-bit/sec optical networks (2000) (3)
- A dual-pass high current density resonant tunnelling diode terahertz emitter (2015) (3)
- Excitonic states in CdTe/Cd0.74Mg0.26Te quantum wires grown on vicinal substrates (2003) (3)
- Time Dependent Potential in Planar Gunn-Effect Device (1976) (3)
- Transition with a hysteresis cycle in surface reconstruction on GaAs(001) observed by optical reflectance spectroscopy (2003) (3)
- Transient reflectivity response with negative time delay caused by femtosecond pulse propagation in GaAs thin films (2009) (3)
- Effect of Alloy Scattering on Electron and Hole Impact Ionization Rates in Ga1-xInxAsyP1-y Alloy System (1986) (3)
- Gain switching of an AlGaAs/GaAs laser with an asymmetric double quantum well (1990) (2)
- Ultrafast all-optical switching using near-infrared intersubband transitions in InGaAs/AlAsSb quantum well structures (2000) (2)
- Two-Dimensional 4×4 Optical Fiber Array Applied to a Monolithic LED Array (1983) (2)
- Modulation of Microwave Transmission by Acoustoelectric Domains in CdS (1973) (2)
- CW Performances of planar Gunn-effect devices (1979) (2)
- Theoretical analysis of the -3/4 power law in semiconductor avalanche breakdown (1988) (2)
- Exciton response controlled by introducing a spacer layer in nitrided InAs quantum dots (2009) (2)
- VIA-5 planar structure monolithic photoreceiver circuit using a metal-semiconductor-metal (MSM) photodiode and a GaAs MESFET amplifier (1985) (2)
- Femtosecond Optoelectronic Devices for Terabit/sec Communication and Signal Processing Systems (1997) (2)
- Optoelectronic integrated components for digital optical computing systems (1990) (2)
- One-chip optical transmitter with a microcleaved facet AlGaAs/GaAs GRIN-SCH SQW laser (1987) (2)
- Square microcavity lasers exhibiting dual-transverse-mode lasing with controllable wavelength interval (2016) (2)
- AlGaAS/GaAs lateral current injection MQW laser (1987) (2)
- Temperature-Insensitive Intersubband-Transitions in InGaAs/AlAsSb Multiple Quantum Well Designed for Optical Communication Wavelength* (2001) (2)
- High performance balanced photodetector using an InP based waveguide coupler and twin PIN photodiode for coherent fiber communications (1990) (2)
- Analysis of damage during InP hydrocarbon-RIE (1992) (2)
- Intersubband Transitions In LnGaAs/AlAs Coupled Double Quantum Well (c-dqw) Structures For Multi-wavelength All-optical Switching (1997) (2)
- 1.5 µm Wavelength InGaAsP/InP DH LED with Improved Radiance Characteristics (1982) (2)
- Lateral-Coupling-Induced Modification of Density of States and Exciton Dynamics in High-Density Ordered In0.4Ga0.6As/GaAs(311)B Quantum Dot Arrays (2002) (2)
- Broad bandwidth emission from hybrid QW/QD structures (2013) (2)
- Optoelectronic integrated transmitter with a microcleaved facet AlGaAs/GaAs quantum well laser (1985) (2)
- Quantum Dot Switches: Towards Nanoscale Power-Efficient All-Optical Signal Processing (2012) (2)
- Anisotropic exchange interaction caused by hole-spin reorientation in (CdTe)0.5(Cd0.75Mn0.25Te)0.5 tilted superlattices grown on Cd0.74Mg0.26Te(0 0 1) vicinal surface (2005) (2)
- Ultrafast (/spl sim/1 THz) 1.55 /spl mu/m all-optical switch using intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells (2001) (2)
- Nonlinearity and Response Time of 1.55 µm Intersubband Absorption in InGaAs/AIAs/AIAsSb Coupled Quantum Wells (2001) (2)
- All-Optical Two-Dimensional Serial-to-Parallel Pulse Converter Using an Organic Film with Femtosecond Optical Response (2001) (2)
- Carrier dynamics in site-controlled InAs dots analyzed by time-resolved micro-photoluminescence (1999) (2)
- Four-channel optoelectronic integrated circuits (1987) (2)
- Control of Optical Emission from Coupled Excitonic States in Quantum Dot Superlattice Structures (2007) (2)
- Improving performance of AlGaAs/GaAs monolithic laser/FET by GRIN-SCH quantum-well laser (1984) (2)
- Emission-wavelength extension of nitrided InAs/GaAs quantum dots with different sizes (2007) (2)
- An AlGaSb avalanche photodiode exhibiting low excess noise factor (1988) (2)
- Development of broad spectral bandwidth hybrid QW/QD structures from 1000-1400 nm (2014) (2)
- Control of InxGa1-xAs Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots (2004) (2)
- A New OEIC Fabrication Technique - Graded-Step Process - Applied to an AlGaAs/GaAs Monolithic Laser/FET (1984) (2)
- Liquid Crystal Based Terahertz Spatial Light Modulator for Imaging Application (2018) (1)
- Beat-detect OTDM demultiplexer (2001) (1)
- Spin Control in Diluted Magnetic Ion Doped Nano-Wire Structures (2004) (1)
- Integrated optoelectronics for optical interconnections and optical processing (1992) (1)
- Intersubband-transition-induced interband two-photon absorption by femtosecond optical excitation (2000) (1)
- Flip-chip integrated GaInAs PIN photodiode/GaAs preamplifier photoreceiver for gigabitrate communication systems (1988) (1)
- Ultrafast all-optical switching at 1.3 /spl mu/m/1.55 /spl mu/m using a novel InGaAs/AlAsSb/InP coupled double quantum well structure for intersubband transitions (1998) (1)
- Mask Preparation for Small Dimension Ion Milling by Two Step Lift‐Off Process (1977) (1)
- Coherent and incoherent carrier dynamics of InGaAs quantum dots analyzed by transient photoluminescence (2000) (1)
- Valence‐band mixing induced by sp‐d exchange interaction in CdMnTe quantum wires (2006) (1)
- Planar structure optoelectronic integrated circuits: Towards advanced optical processing and communication (1987) (1)
- Anisotropic exchange interaction in CdTe/Cd0.75Mn0.25Te quantum wires (2004) (1)
- Ultrafast intersubband absorption switching using InGaAs/AlAsSb quantum wells (2000) (1)
- Multidirectional Transmission Electron Microscope Observation of a Single InAs/GaAs Self-Assembled Quantum Dot (2007) (1)
- Extremely High-Quality GaAs-AlGaAs GRIN-SCH Lasers with a Superlattice Buffer Layer Grown by MBE for OEIC Applications (1984) (1)
- Ultrafast intersubband transitions in heavily doped InGaAs/AlAsSb coupled double quantum well structures for all-optical switching (2001) (1)
- Radiative Lifetimes of Excitons in CdMgTe/CdTe Tilted Superlattices Grown on Vicinal Surfaces (2002) (1)
- Large intersubband nonlinearity for all-optical switching at 1.72 micron in Sb-based quantum wells (2002) (1)
- Semiconductor femtosecond optoelectronic devices for ultrafast telecommunications and signal processing (1998) (1)
- Optical Quality of GaAs-AlGaAs Heterostructure Layers Grown by MBE (1982) (1)
- Statistical fluctuation of magnetization in Mn-composition modulated Cd1−xMnxTe quantum wires (2010) (1)
- Ultrafast all-optical switching using intersubband transitions in InGaAs/AlAsSb quantum well structures (2002) (1)
- Fabrication of planar Gunn-effect logic device with self-aligned Schottky-barrier gates (1976) (1)
- Ultrafast high-efficiency all-optical modulators using intersubband transition in asymmetric quantum wells (1998) (1)
- Ultrafast spin relaxation in quantum-confined structures for all-optical switching (1998) (1)
- AlInAs/GaInAs HEMT application for high performance OEIC receivers (1989) (1)
- Ferromagnetic State of GdN Thin Film Studied by Ferromagnetic Resonance (2011) (1)
- Interaction between conduction‐band edge and nitrogen‐related localized levels in nitrogen δ ‐doped GaAs (2011) (1)
- Optoelectronic integration supports optical systems (1990) (1)
- An Improved Photolithographic Method of Metallization Applied to Fabrication of Planar Gunn‐Effect Devices (1976) (1)
- Wideband polarization insensitivity quantum dot optical amplifier (2003) (1)
- High-speed monolithic GaInAs twin PIN photodiodes for coherent optical receivers (1991) (1)
- High-Performance, Back-Illuminated InP/GaInAs Lateral PIN Photodiode (1990) (1)
- Wavelength conversion using nondegenerate four-wave mixing in quantum dot optical amplifier (2000) (1)
- Power-Efficient, High-Performance Photonic Signal Processing Devices Using Semiconductor Nanostructures (2014) (0)
- Editorial: semiconductor optoelectronics (1991) (0)
- InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling (1995) (0)
- Picosecond all-optical switching using tunneling and spin-relaxation in quantum well structures (1995) (0)
- Enhancement of optical nonlinearity for short wavelength (/spl sim/1.5 /spl mu/m) intersubband transitions by n-doped InGaAs/AlAsSb MQW (1999) (0)
- Indium Phosphide (InP) (2005) (0)
- High-speed monolithic coherent optical receiver with a waveguide coupler and lateral PIN photodiodes integrated on a InP substrate (1991) (0)
- Enhancement of /spl chi//sup (3)/ of squarylium dye j-aggregates in infrared region by two-photon resonance (2001) (0)
- Novel, Simple Model for High Temperature Stability of InAs/GaAs Self-assembled Quantum Dot Lasers with Optimum p -type Modulation Doping (2008) (0)
- Ultrashort pulse controlled all-optical modulation by intersubband-coupled-interband transitions in doped quantum wells (1998) (0)
- Ultrafast anisotropic processes of exciton magnetic polarons in CdTe/CdMnTe quantum wires (2004) (0)
- Instantaneous-response low-power simple OTDM demultiplexer by using beat-detection (2001) (0)
- Microscopic transient photoluminescence of site-controlled InAs dots (1999) (0)
- Flip-Chip GaInAs/InP Quad PIN Photodiodes for Polarization-Diversity Coherent Optical Receivers (1991) (0)
- 14aYC-3 Anisotropic energy relaxation of exciton magnetic polaron in CdTe/(Cd, Mn)Te quantum wire (2004) (0)
- Nonlinear dynamics and enhanced modulation response in optically injected AlGaInAs/InP microdisk laser (2016) (0)
- Tail-Suppressed THz Photocurrent by a Bi-Polar Photoconductive Antenna Fabricated on Semi-insulating GaAs (2019) (0)
- Two-state-lasing in InAs/InGaAsP/InP quantum dot microcylinder lasers (2016) (0)
- Fabrication of demultiplexer for T bps optical signals by using spincoated squarylium dye J-aggregates exhibiting femtosecond optical response (2001) (0)
- Picosecond all-optical switching using 1.55 /spl mu/m intersubband transition in an InGaAs/AlAs/AlAsSb coupled double quantum well (C-DQW) structure (2000) (0)
- Photonics technology in the 21st century : 27-29 November 2001, Singapore /John H. Marsh, Pallab Bhattacharya, Osamu Wada, chairs/editors ; sponsored by SPIE--the International Society for Optical Engineering, Nanyang Technological University(Singapore) (2001) (0)
- Bound-exciton luminescence from nitrogen doped GaAs grown by site-controlled doping technique (2005) (0)
- Quantum- and nano-structure semiconductors for ultrafast photonic devices (2003) (0)
- Semiconductor photodetecting device (1990) (0)
- Anisotropic Magnetic-Field Evolution of Valence-Band States in One-Dimensional Diluted Magnetic Semiconductors (2007) (0)
- Special Issue on the 7th International Conference on Indium Phosphide and Related Materials (1996) (0)
- Different responses of localized and extended excitons to exciton–exciton scattering manifested in excitation density-dependent photoluminescence excitation spectra (2001) (0)
- Intraband relaxation of photoexcited carriers in multiple stacked quantum dots and quantum dot chains (2010) (0)
- Planar monolithic PIN/FET fabricated by using an embedded structure InP/GaInAs PIN photodiode and an AllnAs/GalnAs field-effect transistor (1987) (0)
- Chapter 12 – CURRENT STATUS OF OPTOELECTRONIC INTEGRATED CIRCUITS (1995) (0)
- Femtosecond Response of Diffraction Efficiency of GaAs/AlGaAs Photorefractive Multiple Quantum Well (2003) (0)
- Ultrafast all-optical switching in semiconductor quantum wells and quantum dots (2005) (0)
- Ultrafast All-Optical Switching Based on Inter-Subband Transition in GaN/AlGaN and InGaAs/AlAsSb Multiple Quantum Wells (2000) (0)
- Monolithic integration of a quantum-well laser and a driver circuit on a GaAs substrate (1984) (0)
- Kobe University Repository : Kernel タイトル Tit le Fine structure split t ing of isoelectronic bound excitons in nit rogen-doped GaAs 著者 (2019) (0)
- Mechanism of THz dielectric constant enhancement in multi-component oxide glasses investigated by infrared and THz spectroscopies (2023) (0)
- Integrated optoelectronics for optical interconnections and optical signal processing (1992) (0)
- Magnetic field-sensitive polarization anisotropy in one-dimensional diluted magnetic semiconductors (2006) (0)
- Characterization of recombination processes in quantum dot lasers using small signal modulation (2012) (0)
- Two-dimensional electron gas at Ga0.5In0.5P/GaAs heterointerface spontaneously induced by atomic ordering (2002) (0)
- Special Issue on Ultrafast Optical Signal Processing and Its Application (2002) (0)
- Femtosecond Optoelectronic Devices Based on Ultrafast phenomena in Semiconductor (1997) (0)
- Self-assembled InAs quantum dots within a vertical cavity structure for all-optical switching devices (2010) (0)
- Femtosecond photonic devices using nano-structure materials for ultrafast optical communications (2003) (0)
- OEIC. Present and prospects. (1987) (0)
- Anisotropic linear-polarization luminescence in CdTe/CdMnTe quantum wires (2009) (0)
- OEICs: Movement and Evolution (1990) (0)
- Novel technique for all-optical modulation in asymmetric quantum wells (1999) (0)
- Quantum dots in a vertical cavity for all-optical switching devices (2009) (0)
- Ultrashort (/spl les/150 fs) carrier relaxation time of intersubband transition in AlGaN/GaN multiple quantum wells (2000) (0)
- Progress in femtosecond technology for ultrafast communication networks (2002) (0)
- Ultrafast, Energy-Efficient Photonic Switches Based on Semiconductor Nanostructures (2013) (0)
- Enhanced Magneto-Optical Interaction in CdTe/CdMnTe Quantum Wires (2002) (0)
- Metal-Semiconductor-Metal Photodiode on GaInAs Exhibiting Very Fast Response (1988) (0)
- Experimental Characterization of Photonic Crystal Delay Lines Based on Coupled Defects (2002) (0)
- Lateral-Coupling-Induced Modification of Density of States and Exciton Dynamics in High-Density Ordered In_ Ga_ As/GaAs(311)B Quantum Dot Arrays(Optical Properties of Condensed Matter) (2002) (0)
- Kobe University Repository : Kernel タイトル Tit le Temperature dependence of photoluminescence characterist ics of excitons in stacked quantum dots and quantum dot chains (2019) (0)
- Recent Progress in Long-Wavelength Photodetectors for Optical Transmission Systems (1989) (0)
- Comparison of Optical Properties of In0.4Ga0.6As/GaAs(311)B Two-Dimensional Quantum Dot Superlattices and Quantum Wells (2002) (0)
- Single Shot Demultiplexing of 1THz Light Pulses by Time-to-Space Conversion Using a Film of Organic Dye J-Aggregates (2000) (0)
- Highly Efficient Ultra-Violet Luminescence from Low-Temperature Grown AlGdN (2010) (0)
- Nonlinearity and response speed evaluation of intersubband transition in InGaAs/AlAsSb quantum well (2001) (0)
- Evolution of Femtosecond Optoelectronic Devices (2000) (0)
- Kobe University Repository : Kernel タイトル Tit le Observat ion of phase shifts in a vert ical cat \ vity quantunm dot switch 著者 (2018) (0)
- the development of ultra high-speed digital systems (1992) (0)
- Long-Wavelength Emission from Strain Controlled InAs/GaAs Self-Assembled Quantum Dots (2005) (0)
- Exciton fine structure of nitrogen isoelectronic centers in GaAs (2008) (0)
- Kobe University Repository : Kernel タイトル Tit le Saturat ion of Förster resonance energy transfer between two opt ically nonlinear cyanine dyes of small Stokes shift energies in polymer thin films 著者 (2018) (0)
- A NEW FABRICATION TECHNIQUE FOR OPTOELECTRONIC INTEGRATED CIRCUITS (OEIC′S) - THE GRADED-STEP PROCESS - APPLIED TO THE FABRICATION OF ALUMINUM GALLIUM ARSENIDE/GALLIUM ARSENIDE PIN/FET AND PIN/AMPLIFIER PHOTORECEIVERS (1985) (0)
- Real Time Probing of Self-Assembling Process Steps in InAs/GaAs Quantum Dot Growth (2007) (0)
- Ultrafast all-optical switches based on semiconductor quantum structures (2003) (0)
- Hole‐spin reorientation in (CdTe)0.5(Cd0.75Mn0.25Te)0.5 tilted superlattices grown on Cd0.74Mg0.26Te(001) vicinal surface (2005) (0)
- A method for manufacturing a semiconductor device comprising an optical and an electronic component. (1985) (0)
- Twin-PIN Photodiode with High-Speed Response at High Optical Input Power for Coherent Receiver (1989) (0)
- Magneto‐Photoluminescence Spectroscopy of Exciton Fine Structure in Nitrogen δ‐Doped GaAs (2011) (0)
- CONTROL OF ZINC DOPING FOR GROWTH IN INDIUM PHOSPHIDE PN JUNCTION BY LIQUID PHASE EPITAXY (1981) (0)
- Report on CLEO'88III (1988) (0)
- Comment on Electric-field control in planar Gunn-effect device with Schottky-barrier anode [and reply] (1976) (0)
- Single Shot Demultiplexing of 1 THz Light Pulses by Time-to-Space Conversion Using a Film of Organic Dye J-Aggregates(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks) (2000) (0)
- Special Issue featuring invited articles arising from UK Semiconductors 2012 (2013) (0)
- High radiance AlGaAs DH LED array by MBE (1983) (0)
- A tunnel injection structure for speeding up carrier dynamics in InAs/GaAs quantum dots using a GaNAs quantum-well injector (2010) (0)
- Analysis of Capacitance of Planar AlGaAs/GaAs pin Photodiode (1986) (0)
- Reactively ion etched nonuniform-depth grating for advanced DFB lasers (1991) (0)
- Picosecond All-Optical Switching of a Quantum Well Etalon Using Spin-Polarization Relaxation (1995) (0)
- Vertical impedance matching for enhanced evanescent coupling in waveguide/photodetectors (1990) (0)
- Quantum Dots and Semiconductor Nanostructures for Photonic Signal Processing Devices (2007) (0)
- High-Index. Low-Loss Nd3+: Oxyfluorosilicate Glasses for THz Applications (2018) (0)
- Novel characterization technique for GaAs/GaInP heterojunction bipolar transistor wafers based on Fourier transformed photoreflectance enabling selective determination of interface electric fields (2003) (0)
- All-optical switch using InAs quantum dots in a vertical cavity (2010) (0)
- conferenceseries.iop.org materials science and engineering open access proceedings IOP Conferences Series: Materials Science and Engineering (2009) (0)
- THz-TDS Characterization of Multi-component Glasses and Unified Dielectric Model (2020) (0)
- Valence-band mixing in CdTe/CdMnTe nano-wire structures in magnetic field (2005) (0)
- Controlling Polarization in Quantum-dot Semiconductor Optical Amplifiers (2009) (0)
- Nonlinearity and response time of 1.55 /spl mu/m intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells (2001) (0)
- OEICs for lightwave systems (1990) (0)
- Liquid Crystal Based Terahertz Phase Shifter with Bi-Layer Structure (2018) (0)
- Research and development of ultrafast optoelectronic devices (2005) (0)
- All-Optical 2-D Serial-to-Parallel Pulse Converter Using an Organic Film with Femtosecond Optical Response (2000) (0)
- Progress in Femtosecond Optoelectronic Devices (2000) (0)
- Current Switching Observed in Planar Gunn-Effect Device with Thin Active Layer (1976) (0)
- High-density electron gas induced by atomic ordering in undoped Ga/sub 0.5/In/sub 0.5/P/GaAs heterostructure (2002) (0)
- Tutorial: Ultrafast InP technologies for optical fiber communications (2004) (0)
- Special Issue on Photonic Integrated Circuits (1997) (0)
- Ultrafast Optical Demultiplexer Using a Spincoated Squarylium-Dye Film (2002) (0)
- Kobe University Repository : Kernel タイトル Tit le Excitonic states in CdTe / Cd 0 . 74 Mg 0 . 26 Te quantum wires grown on vicinal substrates 著者 (2018) (0)
- Monolithic waveguide/photodiode integration on InP with integrated mirrors or vertical-impedance matching (1990) (0)
- Hybrid quantum well/quantum dot active element for broad spectral bandwidth emitters and amplifiers (2012) (0)
- Integrated waveguide/photodiodes with vertical impedance matching (1990) (0)
- Serial-to-parallel conversion of femtosecond optical pulses using organic optical shutter (2000) (0)
- Very low noise, large gain-bandwidth Al-GaSb avalanche photodiodes (1989) (0)
- Ultrafast Spin Relaxation in InGaAs/InP Quantum Wells for Femtoseconds Switch Applications (1997) (0)
- Emission-wavelength extension of InAs/GaAs quantum dots by controlling lattice-mismatch strain (2006) (0)
- Comparison of intersubband relaxation times in GaN/AlGaN and in InGaAs/AlGaAs quantum wells (2001) (0)
- 21aHW-8 Dynamics of exciton relaxation in high density multiple stacked quantum dots (2010) (0)
- Order‐Parameter Dependence of Spontaneous Electron Accumulation at Ga0.5In0.5P/GaAs Studied by Raman‐Scattering and Photoluminescence Measurements (2005) (0)
- Nitridized InAs/GaAs self-assembled quantum dots for optical communication wavelength (2004) (0)
- Wavelength control of nitrided InAs/GaAs quantum dots in fiber-optic communication region (2005) (0)
- Progress in optoelectronic integrated circuits (1988) (0)
- Electronic Structure of Ordered Ga0.5In0.5P/GaAs Heterointerface Studied by Raman-Scattering and Photoluminescence-Excitation Measurements (2005) (0)
- Mechanism of emission-wavelength extension in nitrided InAs/GaAs quantum dots (2005) (0)
- Confined Electronic Structures of Nitrogen Isoelectronic Centers in GaAs Grown by Atomically Controlled Doping Technique (2007) (0)
- Optical Gain of Polarized Emission in InAs Quantum Dots with InxGa1-xAs Capping Layer (2005) (0)
- III-V semiconductor integrated optoelectronics for optical computing (1991) (0)
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What Schools Are Affiliated With Osamu Wada?
Osamu Wada is affiliated with the following schools:
