Paul Daniel Dapkus

Paul Daniel Dapkus's AcademicInfluence.com Rankings

Paul Daniel Dapkus

Engineering

#4308

World Rank

#5498

Historical Rank

Photonics

#29

World Rank

#29

Historical Rank

Electrical Engineering

#1080

World Rank

#1162

Historical Rank

engineering Degrees

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Engineering

Paul Daniel Dapkus's Degrees

PhD Electrical Engineering Stanford University
Masters Electrical Engineering Stanford University

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Paul Daniel Dapkus's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Disorder of an AlAs‐GaAs superlattice by impurity diffusion (1981) (542)
Quantum-well heterostructure lasers (1980) (457)
Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation (1995) (307)
Dense arrays of ordered GaAs nanostructures by selective area growth on substrates patterned by block copolymer lithography (2000) (198)
Electrical and optical characterization of surface passivation in GaAs nanowires. (2012) (195)
High purity GaAs prepared from trimethylgallium and arsine (1981) (171)
GaAs nanowire array solar cells with axial p-i-n junctions. (2014) (167)
Room temperature photonic crystal defect lasers at near-infrared wavelengths in InGaAsP (1999) (163)
Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition (1978) (156)
Homogeneous and heterogeneous thermal decomposition rates of trimethylgallium and arsine and their relevance to the growth of GaAs by MOCVD (1986) (155)
Two-dimensional photonic bandgap defect laser (1999) (155)
Disorder of an AlAs‐GaAs superlattice by silicon implantation (1982) (152)
IR‐red GaAs‐AlAs superlattice laser monolithically integrated in a yellow‐gap cavity (1981) (148)
InGaN/GaN multiple quantum wells grown on nonpolar facets of vertical GaN nanorod arrays. (2012) (145)
Wide-bandwidth distributed Bragg reflectors using oxide/GaAs multilayers (1994) (141)
Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 mu m compressively strained semiconductor lasers (1993) (139)
Room‐temperature operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition (1977) (131)
Ultralow threshold current vertical-cavity surface-emitting lasers with AlAs oxide-GaAs distributed Bragg reflectors (1995) (122)
Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition. (2015) (112)
Microdisk lasers vertically coupled to output waveguides (2002) (109)
Carrier collection in a semiconductor quantum well (1978) (107)
Optical, electrical, and solar energy-conversion properties of gallium arsenide nanowire-array photoanodes (2013) (105)
Temperature dependence of threshold current for quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes (1980) (101)
Vertical resonant couplers with precise coupling efficiency control fabricated by wafer bonding (1999) (89)
Toward optimized light utilization in nanowire arrays using scalable nanosphere lithography and selected area growth. (2012) (84)
GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layer (1997) (83)
Lithographic tuning of a two-dimensional photonic crystal laser array (2000) (83)
Extended tuning range in sampled grating DBR lasers (1993) (83)
An analysis of the performance of heterojunction phototransistors for fiber optic communications (1982) (78)
High‐energy (Visible‐red) stimulated emission in GaAs (1981) (76)
Temperature dependence of threshold current for a quantum-well heterostructure laser (1980) (72)
Catalyst‐Free GaN Nanorods Synthesized by Selective Area Growth (2014) (72)
Graded barrier single quantum well lasers - Theory and experiment (1983) (69)
GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy (1987) (69)
Large optical nonlinearities in a GaAs/AlGaAs hetero n‐i‐p‐i structure (1988) (69)
Two-dimensional photonic crystal Mach-Zehnder interferometers (2003) (68)
Twin-free GaAs nanosheets by selective area growth: implications for defect-free nanostructures. (2013) (68)
Optimizing N-p-n and P-n-p heterojunction bipolar transistors for speed (1987) (68)
Low-threshold-current-density 1.5 mu m lasers using compressively strained InGaAsP quantum wells (1992) (68)
Selectively Oxidized Vertical-Cavity Surface-Emitting Lasers (1996) (67)
Influence of mirror reflectivity on laser performance of very-low-threshold vertical-cavity surface-emitting lasers (1995) (66)
Phonon‐sideband MO‐CVD quantum‐well AlxGa1−xAs‐GaAs heterostructure laser (1979) (64)
Alloy clustering in AlxGa1-xAs-GaAs quantum-well heterostructures (1980) (63)
Vertically coupled InP microdisk switching devices with electroabsorptive active regions (2002) (63)
Coupled-ring-resonator-based silicon modulator for enhanced performance. (2008) (61)
Preparation and properties of Ga 1-x Al x As-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition (1979) (61)
Electrically-pumped vertical-cavity lasers with AlxOy-GaAs reflectors (1996) (59)
The dynamics of electron‐hole collection in quantum well heterostructures (1982) (59)
Phonon‐assisted recombination and stimulated emission in quantum‐well AlxGa1−xAs‐GaAs heterostructures (1980) (59)
Microring resonators vertically coupled to buried heterostructure bus waveguides (2003) (58)
Effect of dislocations on green electroluminescence efficiency in GaP grown by liquid phase epitaxy (1975) (57)
Room‐temperature continuous operation of photopumped MO‐CVD AlxGa1−xAs‐GaAs‐AlxGa1−xAs quantum‐well lasers (1978) (56)
High-Q vertically coupled InP microdisk resonators (2002) (55)
Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots (2001) (54)
Continuous 300 °K laser operation of single‐quantum‐well AlxGa1−xAs‐GaAs heterostructure diodes grown by metalorganic chemical vapor deposition (1979) (54)
Atomic layer epitaxy for the growth of heterostructure devices (1988) (54)
1.2-μm GaAsP/InGaAs strain compensated single-quantum-well diode laser on GaAs using metal-organic chemical vapor deposition (1999) (52)
Very low threshold Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition (1978) (52)
Design and fabrication of VCSELs with Al/sub x/O/sub y/-GaAs DBRs (1997) (52)
Aperture placement effects in oxide-defined vertical-cavity surface-emitting lasers (1998) (52)
Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets (2012) (52)
Polarization insensitive strained quantum well gain medium for lasers and optical amplifiers (1992) (51)
Low‐threshold continuous laser operation (300–337 °K) of multilayer MO‐CVD AlxGa1−xAs‐GaAs quantum‐well heterostructures (1978) (51)
CH4-based dry etching of high Q InP microdisks (2002) (48)
Active semiconductor microdisk devices (2002) (48)
Spontaneous and Stimulated Carrier Lifetime (77°K) in a High‐Purity, Surface‐Free GaAs Epitaxial Layer (1970) (48)
Ga(1−x)AlxAs/Ga(1−y)AlyAs double‐heterostructure room‐temperature lasers grown by metalorganic chemical vapor deposition (1977) (47)
Operation of photonic crystal membrane lasers above room temperature (2002) (46)
Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation (2000) (45)
Very narrow graded‐barrier single quantum well lasers grown by metalorganic chemical vapor deposition (1982) (45)
Threshold Requirements and Carrier Interaction Effects in GaAs Platelet Lasers (77°K) (1970) (45)
Laser Transition and Wavelength Limits of GaAs (1969) (44)
High-efficiency GaAlAs/GaAs heterostructure solar cells grown by metalorganic chemical vapor deposition (1977) (43)
Electrical properties of polycrystalline GaAs films (1980) (43)
Continuous-wave operation of 1.5μm InGaAs∕InGaAsP∕InP quantum dot lasers at room temperature (2005) (43)
Continuous room‐temperature operation of Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition (1978) (42)
Kinetics of recombination in nitrogen‐doped GaP (1974) (41)
Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires (2016) (41)
vi INFORMATION FOR CONTRIBUTORS ix GENERAL EDITORIAL POLICIES xi EDITORIAL: Submitting Electronic Graphics Files OPTICS 1 Technique for integration of vertical cavity lasers and resonant photodetectors (1998) (41)
A critical comparison of MOCVD and MBE for heterojunction devices (1984) (41)
Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence (2004) (41)
Tailoring of the Resonant Mode Properties of Optical Nanocavities in Two-Dimensional Photonic Crystal Slab Waveguides (2001) (40)
Al0.5Ga0.5As‐GaAs heterojunction phototransistors grown by metalorganic chemical vapor deposition (1979) (40)
Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence (1998) (39)
In situ laser reflectometry applied to the growth of Al/sub x/Ga/sub 1-x/As Bragg reflectors by metalorganic chemical vapour deposition (1991) (39)
Effect of Auger recombination and differential gain on the temperature sensitivity of 1.5 μm quantum well lasers (1993) (39)
High-Quality-Factor Photonic Crystal Heterostructure Laser (2006) (39)
Low-threshold quantum well lasers grown by metalorganic chemical vapor deposition on nonplanar substrates (1989) (38)
Sapphire-bonded photonic Crystal microcavity lasers and their far-field radiation patterns (2005) (38)
Atmospheric pressure atomic layer epitaxy : mechanisms and applications (1991) (37)
Bevel cross sectioning of ultra-thin (∼ 100 Å) III–V semiconductor layers (1979) (36)
Low resistance intracavity-contacted oxide-aperture VCSELs (1998) (36)
Tunable narrow linewidth all-buried heterostructure ring resonator filters using vernier effects (2005) (36)
Room temperature operation of InGaAs∕InGaAsP∕InP quantum dot lasers (2004) (35)
Abrupt Ga1−xAlxAs‐GaAs quantum‐well heterostructures grown by metalorganic chemical vapor deposition (1979) (35)
Minority‐carrier lifetimes and luminescence efficiencies in nitrogen‐doped GaP (1973) (35)
GaAs-based opto-thyristor for pulsed power applications (1989) (35)
Absorption measurements at high pressure on AlAs‐AlxGa1−xAs‐GaAs superlattices (1982) (35)
An analytical evaluation of GaAs grown with commercial and repurified trimethylgallium (1982) (35)
Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate (1999) (34)
Single‐longitudinal‐mode metalorganic chemical‐vapor‐deposition self‐aligned GaAlAs‐GaAs double‐heterostructure lasers (1980) (34)
Continuous room‐temperature multiple‐quantum‐well AlxGa1−xAs‐GaAs injection lasers grown by metalorganic chemical vapor deposition (1979) (34)
Tunneling in the reverse dark current of GaAlAsSb avalanche photodiodes (1982) (33)
Bandfilling in metalorganic chemical vapor deposited AlxGa1−xAs‐GaAs‐AlxGa1−xAs quantum‐well heterostructure lasers (1978) (33)
Deep‐level changes associated with the degradation of gallium phosphide red‐light‐emitting diodes (1976) (33)
Nanofabrication of photonic crystal membrane lasers (2002) (33)
Threshold current analysis of compressive strain (0-1.8%) in low-threshold, long-wavelength quantum well lasers (1993) (33)
Phonon-assisted recombination and stimulated emission in multiple quantum-well Mo-CVD AlxGa1-xAs-GaAs heterostructures (Lz∽50Å, E1-1' -2× h̵ωLO⪅h̵ω (1979) (32)
Atomic layer epitaxy of compound semiconductors with metalorganic precursors (1989) (32)
The growth and characterization of metalorganic chemical vapor deposition (MO-CVD) quantum well transport structures (1981) (32)
Eight-channel microdisk CW laser arrays vertically coupled to common output bus waveguides (2004) (32)
Nonlinear absorption properties of AlGaAs/GaAs multiple quantum wells grown by metalorganic chemical vapor deposition (1988) (31)
Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapour deposition on GaAs substrates (2000) (31)
Lasing characteristics of high-performance narrow-stripe InGaAs-GaAs quantum-well lasers confined by AlAs native oxide (1996) (31)
LASERS, OPTICS, AND OPTOELECTRONICS 3467 Gain trimming of the resonant characteristics in vertically coupled InP microdisk switches (2002) (31)
Reflectance‐difference spectroscopy study of surface reactions in atomic layer epitaxy of GaAs using trimethylgallium and tertiarybutylarsine (1991) (31)
Temperature engineered growth of low‐threshold quantum well lasers by metalorganic chemical vapor deposition (1989) (31)
DIRECT OBSERVATION OF A DYNAMIC BURSTEIN SHIFT IN A GaAs:Ge PLATELET LASER (1970) (30)
Carrier-induced refractive index changes in InP-based circular microresonators for low-voltage high-speed modulation (2005) (30)
Large area, low capacitance, GaAs nanowire photodetector with a transparent Schottky collecting junction (2013) (30)
Photopumped laser operation of MO‐CVD AlxGa1−xAs near a GaAs quantum well (λ≳6200 Å, 77 °K) (1978) (30)
Laterally coupled buried heterostructure high-Q ring resonators (2004) (29)
Single‐longitudinal‐mode cw room‐temperature Ga1−xAlxAs‐GaAs channel‐guide lasers grown by metalorganic chemical vapor deposition (1978) (29)
Fabrication, characterization and analysis of low threshold current density 1.55-/spl mu/m-strained quantum-well lasers (1996) (29)
Optical Nonlinearities Due to Carrier Transport in Semiconductors (1989) (29)
Steric hindrance effects in atomic layer epitaxy of InAs (1989) (29)
STIMULATED EMISSION IN In1 ‐xGaxP (1970) (29)
The exciton in recombination in AlxGa1−xAs-GaAs quantum-well heterostructures (1980) (29)
Experimental characterization of the optical loss of sapphire-bonded photonic crystal laser cavities (2006) (28)
Long-wavelength (1.3- to 1.6-µm) detectors for fiber-optical communications (1982) (28)
Quantum well lasers with active region grown by laser‐assisted atomic layer epitaxy (1990) (28)
Wavelength shift of selectively oxidized Al/sub x/O/sub y/-AlGaAs-GaAs distributed Bragg reflectors (1997) (28)
Wurtzite InP nanowire arrays grown by selective area MOCVD (2010) (28)
On the Thermal Decomposition of Trimethylgallium—A Molecular Beam Sampling Mass Spectroscopy Study (1991) (28)
Low threshold current 1.5- mu m buried heterostructure lasers using strained quaternary quantum wells (1992) (28)
THE LASER TRANSITION AND PHOTON ENERGY OF GaAs IN THE LIGHTLY‐DOPED LIMIT (1968) (28)
Minority-carrier lifetimes in undoped AlGaAs/GaAs multiple quantum wells (1989) (27)
Characterization and determination of the band‐gap discontinuity of the InxGa1−xAs/GaAs pseudomorphic quantum well (1991) (27)
Continuous room-temperature operation of microdisk laser diodes (1999) (27)
Laser beam heating and transformation of a GaAs‐AlAs multiple‐quantum‐well structure (1984) (27)
Room‐temperature operation of distributed‐Bragg‐confinement Ga1−xAlxAs‐GaAs lasers grown by metalorganic chemical vapor deposition (1978) (26)
Room temperature operation of type-II GaAsSb/InGaAs quantum well laser on GaAs substrates (2002) (26)
Continuous room-temperature operation of optically pumped InGaAs/InGaAsP microdisk lasers (1998) (26)
Two-dimensional photonic crystal defect laser (1999) (25)
Evaluation of the Zn-O Complex and Oxygen-Donor Electron-Capture Cross Sections in p-Type GaP: Limits on the Quantum Efficiency of Red-Emitting (Zn,O)-Doped Material (1972) (25)
Thermal impedance of VCSELs with AlO/sub x/-GaAs DBRs (1998) (25)
High‐barrier cluster‐free AlxGa1−xAs‐AlAs‐GaAs quantum‐well heterostructure laser (1981) (25)
Tunnel injection and phonon‐assisted recombination in multiple quantum‐well AlxGa1−xAs‐GaAs p‐n heterostructure lasers grown by metalorganic chemical vapor deposition (1979) (24)
Low-threshold single-quantum-well InGaAs/GaAs lasers grown by metal-organic chemical vapor deposition on structure substrates (1992) (24)
An eight-channel demultiplexing switch array using vertically coupled active semiconductor microdisk resonators (2004) (23)
Induced phonon‐sideband laser operation of large‐quantum‐well AlxGa1−xAs‐GaAs heterostructures (Lz ∼200–500 Å) (1980) (23)
Ambipolar diffusion coefficient and carrier lifetime in a compressively strained InGaAsP multiple quantum well device (1997) (22)
Band‐edge absorption coefficients from photoluminescence in semiconductor multiple quantum wells (1989) (22)
InGaN/GaN quantum well growth on pyramids of epitaxial lateral overgrown GaN (2000) (22)
Optical Modulators based on depletion width translation in semiconductor microdisk resonators (2005) (22)
GaAs junction lasers containing the amphoteric dopants Ge and Si (1970) (21)
Defect-Tolerant TiO2-Coated and Discretized Photoanodes for >600 h of Stable Photoelectrochemical Water Oxidation (2020) (21)
Modal Analysis of Photonic Crystal Double-Heterostructure Laser Cavities (2009) (21)
SPONTANEOUS AND STIMULATED CARRIER LIFETIME AND THE SPECTRAL OUTPUT OF CdSe (77°K) (1970) (21)
Room-temperature operation of VCSEL-pumped photonic crystal lasers (2002) (21)
120μW peak output power from edge-emitting photonic crystal double-heterostructure nanocavity lasers (2009) (21)
Nonlinear Bragg reflector based on saturable absorption (1989) (21)
Determination of the indirect band edge of GaAs by quantum-well bandfilling (Lz∼100Å) (1978) (21)
Spectral Properties of Photonic Crystal Double-Heterostructure Resonant Cavities (2006) (20)
Degradation of bulk luminescence in GaP : Zn,O induced by laser excitation (1976) (20)
Nucleation and growth behavior for GaN grown on (0001) sapphire via multistep growth approach (1997) (20)
Use of tertiarybutylarsine in the fabrication of GaAs/AlGaAs quantum wells and quantum well lasers (1990) (20)
Atomic layer growth and processing (1991) (19)
Laser Transitions in p‐Type GaAs:Si (1969) (19)
Optimization of stripe width for low-threshold operation of quantum well laser diodes (1990) (19)
Efficient Schottky-like junction GaAs nanowire photodetector with 9 GHz modulation bandwidth with large active area (2014) (19)
Linewidth and modulation response of two-dimensional microcavity photonic crystal lattice defect lasers (2006) (19)
Hot electrons and phonons in quantum-well AlxGa1-xAs-GaAs heterostructures (1980) (19)
Optical phase characterization of active semiconductor microdisk resonators in transmission (2006) (19)
NONCOLLINEAR FOUR-WAVE MIXING IN A BROAD AREA SEMICONDUCTOR OPTICAL AMPLIFIER (1997) (19)
Absorption and stimulated emission in an AlAs-GaAs superlattice (1981) (19)
Anisotropic Mg incorporation in GaN growth on nonplanar templates (2005) (18)
Continuous room‐temperature photopumped laser operation of modulation‐doped AlxGa1−xAs/GaAs superlattices (1981) (18)
Experimental verification of strain benefits in 1.5- mu m semiconductor lasers by carrier lifetime and gain measurements (1992) (18)
Design of low-loss single-mode vertical-cavity surface-emitting lasers (1999) (18)
Enhanced Fabry-Perot resonance in GaAs nanowires through local field enhancement and surface passivation (2014) (18)
Single-interface enhanced mobility structures by metalorganic chemical vapour deposition (1981) (18)
Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism. (2016) (17)
Absorption, stimulated emission, and clustering in AlAs‐AlxGa1−xAs‐GaAs superlattices (1981) (17)
Photonic crystal lasers in InGaAsP on a SiO(2)/Si substrates and its thermal impedance. (2007) (17)
Direct lateral epitaxy overgrowth of GaN on sapphire substrates based on a sparse GaN nucleation technique (2000) (17)
High pressure measurements on AlxGa1−xAs‐GaAs (x = 0.5 and 1) superlattices and quantum well heterostructure lasers (1982) (17)
Microcavity effects on the spontaneous emission from InGaAs/GaAs quantum wells (1995) (17)
Low‐temperature operation of multiple quantum‐well AlxGa1−xAs‐GaAs p‐n heterostructure lasers grown by metalorganic chemical vapor deposition (1979) (17)
Threshold dependence on the spectral alignment between the quantum-well gain peak and the cavity resonance in InGaAsP photonic crystal lasers (2003) (17)
Laser Recombination Transition in p-TYPE GaAs (1969) (16)
Structural and optical emission characteristics of InGaN thin layers and the implications for growing high-quality quantum wells by MOCVD (1998) (16)
Highly strained InGaAs QW VCSEL with lasing wavelength at 1.22 /spl mu/m (2001) (16)
MOCVD growth of AlGaAs/GaAs structures on nonplanar {111} substrates: Evidence for lateral gas phase diffusion (1991) (16)
Design and Fabrication of VCSEL's with Al O -GaAs DBR's (1997) (16)
Thermal Impedance of VCSEL's with AlO -GaAs DBR's (1998) (16)
Study of the effects of the geometry on the performance of vertically coupled InP microdisk resonators (2002) (16)
Double-heterostructure photonic crystal lasers with lower thresholds and higher slope efficiencies obtained by quantum well intermixing. (2008) (16)
Evidence of gain enhancement in long wavelength strained quantum well laser diodes (1991) (16)
Monolithically integrated surface and substrate emitting vertical cavity lasers for smart pixels (1998) (16)
Aperture dependent loss analysis in vertical-cavity surface-emitting lasers (1999) (15)
Holonyak et al. Respond (1981) (15)
Device-quality epitaxial AlAs by metalorganic-chemical vapor deposition (1981) (15)
Very High Efficiency GaP Green Light Emitting Diodes (1975) (15)
Gain saturation properties of a polarization insensitive semiconductor amplifier implemented with tensile and compressive strain quantum wells (1994) (15)
Single-pulse pump-probe measurement of optical nonlinear properties in GaAs/AlGaAs multiple quantum wells (1994) (15)
Comparative study of low-threshold 1.3 mu m strained and lattice-matched quantum-well lasers (1993) (14)
Carrier dynamics and doping profiles in GaAs nanosheets (2014) (14)
Quenching of stimulated phonon emission in AlxGa1−xAs-GaAs quantum-well heterostructures (1981) (14)
RHEED and XPS observations of trimethylgallium adsorption on GaAs (001) surfaces—Relevance to atomic layer epitaxy (1990) (14)
Studies of TMGa adsorption on thin GaAs and InAs (001) layers (1990) (14)
Nonlinear absorption in AlGaAs/GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition (1987) (13)
Uniform wafer-bonded oxide-confined bottom-emitting 850-nm VCSEL arrays on sapphire substrates (2001) (13)
Growth of single crystal GaN on a Si substrate using oxidized AlAs as an intermediate layer (1998) (13)
Classification of modes in suspended-membrane, 19-missing-hole photonic-crystal microcavities (2005) (13)
Experimental characterization of the reflectance of 60° waveguide bends in photonic crystal waveguides (2005) (13)
Zn diffusion and disordering of an AlAs-GaAs superlattice along its layers (1982) (13)
Epitaxial (Al,Ga)InP-oxide distributed Bragg reflectors for use in visible-wavelength optical devices (1995) (13)
Use of tertiarybutylarsine in atomic layer epitaxy and laser‐assisted atomic layer epitaxy of device quality GaAs (1992) (12)
Phonon contribution to metalorganic chemical vapor deposited Alx Ga1−xAs‐GaAs quantum‐well heterostructure laser operation (1981) (12)
High efficiency InGaAsP photovoltaic power converter (1981) (12)
Quantum-well Al x Ga 1 - x As-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition (1979) (12)
Strain effects on InGaP-InGaAsP-GaAsP tensile strained quantum-well lasers (1995) (12)
Identification of Modes and Single Mode Operation of Sapphire-Bonded Photonic Crystal Lasers under Continuous-Wave Room Temperature Operation (2007) (12)
High speed silicon microring modulator employing dynamic intracavity energy balance. (2012) (12)
High‐efficiency, low‐threshold, Zn‐diffused narrow stripe GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition (1982) (12)
Extremely wide-bandwidth distributed Bragg reflectors using chirped semiconductor/oxide pairs (1995) (11)
Tunable microdisk resonators vertically coupled to bus waveguides using epitaxial regrowth and wafer bonding techniques (2004) (11)
Study of surface reactions in atomic layer epitaxy of GaAs using trimethylgallium by reflectance difference spectroscopy and mass spectroscopy (1993) (11)
Phonon contribution to double‐heterojunction laser operation (1980) (11)
High efficiency InGaAs/GaAs single-quantum-well lasers using single-step metalorganic chemical vapor deposition (1994) (11)
Spatially selective disordering of InGaAs/GaAs quantum wells using an AlAs native oxide and thermal annealing technique (1997) (11)
Size fluctuations and high‐energy laser operation of AlxGa1−xAs‐AlAs‐GaAs quantum‐well heterostructures (1981) (11)
All-optical routing using wavelength recognizing switches (1998) (11)
Transmission electron microscopy study of defect reduction in two-step lateral epitaxial overgrown nonplanar GaN substrate templates (2006) (11)
Theoretical analysis of single‐mode AlGaAs‐GaAs double heterostructure lasers with channel‐guide structure (1982) (11)
Composition control of InGaAsP in metalorganic chemical vapor deposition using tertiarybutylphosphine and tertiarybutylarsine (1998) (11)
A semiconductor tunable laser using a wavelength selective reflector based on ring resonators (2005) (10)
GaAs opto-thyristor for pulsed power applications (1990) (10)
LASER TRANSITION TO BAND EDGE OR TO IMPURITY STATES IN GaAs:Ge (1969) (10)
Photoluminescence study of critical thickness of pseudomorphic quantum wells grown on small area mesa stripes (1991) (10)
Critical dimensions of highly lattice mismatched semiconductor nanowires grown in strain-releasing configurations (2012) (10)
A high-Q wavelength filter based on buried heterostructure ring resonators integrated with a semiconductor optical amplifier (2005) (10)
Efficient yellow and green emitting InGaN/GaN nanostructured QW materials and LEDs (2016) (10)
Growth and characterization of Ga1−xInxAs by low pressure metalorganic chemical vapor deposition (1984) (10)
Correlating exciton localization with compositional fluctuations in InGaN∕GaN quantum wells grown on GaN planar surfaces and facets of GaN triangular prisms (2007) (10)
The performance potential of p-n-p heterojunction bipolar transistors (1985) (10)
High pressure experiments on AlxGa1-xAs-GaAs quantum-well heterostructure lasers (1982) (10)
Low threshold InGaAs/GaAs 45 degrees folded cavity surface-emitting laser grown on structured substrates (1993) (10)
A novel all-optical switch: the wavelength recognizing switch (1997) (9)
Transient and noise characteristics of quantum-well heterostructure lasers (1981) (9)
The role of surface and gas phase reactions in atomic layer epitaxy (1989) (9)
Low threshold current lateral injection lasers on semi-insulating substrates fabricated using Si impurity-induced disordering (1991) (9)
Laser‐machined GaP monolithic displays (1974) (9)
Ultralow threshold VCSEL's for application to smart pixels (1996) (9)
Two-segment spectrally inhomogeneous traveling wave semiconductor optical amplifiers applied to spectral equalization (2002) (9)
Growth and characterization of 1.3 µm CW GaInAsP/InP lasers by liquid-phase epitaxy (1981) (9)
High-speed large-signal digital modulation of three-terminal low-threshold strained InGaAs/GaAs lasers (1994) (9)
Backgating reduction in MESFETs using an AlAs native oxide buffer layer (1996) (9)
High-performance wafer-bonded bottom-emitting 850-nm VCSEL's on undoped GaP and sapphire substrates (1999) (9)
Nonlinear optical absorption in GaAs doping superlattices (1988) (9)
High-speed, low-voltage modulation in circular WGM microresonators (2004) (8)
Optical characterization and determination of conduction band offset of type-II GaAsSb/InGaAs QW (2004) (8)
Single-crystal α-GaN grown on a α-Ga2O3 template layer (1998) (8)
A fully planar p-n-p heterojunction bipolar transistor (1988) (8)
Low‐threshold 1.3‐μm GaInAsP/InP buried heterostructure lasers by liquid phase epitaxy and metalorganic chemical vapor deposition (1981) (8)
Double-Heterostructure Photonic Crystal Lasers with Reduced Threshold Pump Power and Increased Slope Efficiency Obtained by Quantum Well Intermixing (2008) (8)
Photonic Crystal Devices (2003) (8)
Gain saturation properties of a semiconductor gain medium with tensile and compressive strain quantum wells (1994) (8)
Optical Characteristics of InAs/InGaAsP/InP Self-Assembled Quantum Dots Emitting at 1.4–1.6 µm (2002) (7)
Microcavity Laser Linewidth Close to Threshold (2009) (7)
InGaAs/GaAs quantum well lasers with dry‐etched mirror passivated by vacuum atomic layer epitaxy (1994) (7)
Effect of substrate strain on critical dimensions of highly lattice mismatched defect-free nanorods (2012) (7)
Wavelength Shift of Selectively Oxidized Al O -AlGaAs-GaAs Distributed Bragg Reflectors (1997) (7)
Reaction Mechanisms in the Thermal Decomposition of Triethylarsenic and Diethylarsine (1989) (7)
Observation of Asymmetric Nanoscale Optical Cavity in GaAs Nanosheets (2015) (7)
Carrier Lifetimes In A Hetero N-I-P-I Structure. (1988) (7)
Photon quenching in InGaN quantum well light emitting devices (2013) (7)
Growth of InP related compounds on structured substrates for the fibrication of narrow stripe lasers (1992) (7)
Low-dislocation-density, nonplanar GaN templates for buried heterostructure lasers grown by lateral epitaxial overgrowth (2005) (7)
Three-terminal bistable low-threshold strained InGaAs/GaAs laser grown on structured substrates for digital modulation (1993) (7)
Characteristics of GaAs, AlGaAs, and InGaAs materials grown by metalorganic chemical vapor deposition using an on‐demand hydride gas generator (1992) (7)
Impact of amplified spontaneous emission on carrier density for measurement of optical nonlinearities in GaAs/AlGaAs multiple quantum wells (1993) (6)
1.3-μm polarization insensitive amplifiers with integrated-mode transformers (1997) (6)
High-peak-power efficient edge-emitting photonic crystal nanocavity lasers. (2009) (6)
Low Threshold 1.3/spl mu/m Strained and Lattice-Matched Quantum Well Lasers (1992) (6)
Surface reactions in the atomic layer epitaxy of GaAs using monoethylarsine (1991) (6)
Nonlinear Measurements In Multiple Quantum Wells Of Gaas/Algaas Fabricated By Mocvd (1988) (6)
Carrier density distribution in modulation doped GaAs-AlxGa1−xAs quantum well heterostructures (1983) (6)
Wavelength conversion in a quantum well polarization insensitive amplifier (1994) (6)
Observations on Si Contamination in GaP LPE (1975) (6)
Gain saturation in traveling-wave semiconductor optical amplifiers (1998) (6)
A monolithic GaInAsP/InP photovoltaic power converter (1982) (6)
Room‐temperature deep‐state emission spectra, radiative efficiency, and lifetime of some GaP:Te,N crystals (1974) (6)
Initial Stages of MOCVD Growth of Gallium Nitride Using a Multi-Step Growth Approach (1997) (6)
Lithographic fine-tuning of vertical cavity surface emitting laser-pumped two-dimensional photonic crystal lasers. (2002) (6)
Reaction mechanisms of tertiarybutylarsine on GaAs (001) surfaces and its relevance to atomic layer epitaxy and chemical beam epitaxy (1991) (6)
Wafer-bonded bottom-emitting 850-nm VCSEL's on GaP substrates (1999) (5)
Gain compression and thermal analysis of a sapphire-bonded photonic crystal microcavity laser under various duty cycles (2009) (5)
Room temperature operation of VCSEL-pumped photonic crystal lasers (2001) (5)
Controlled Zn diffusion for low threshold narrow stripe GaAlAs/GaAs DH lasers (1981) (5)
Comparison Of The Growth Of InP And InAs By Atomic Layer Epitaxy (1989) (5)
Low-threshold native-oxide confined narrow-stripe folded-cavity surface-emitting InGaAs-GaAs lasers (1995) (5)
Two-dimensional photonic bandgap defect laser (1999) (5)
GaAs‐Pumped GaAs Lasers and the Behavior of Band Tails (1971) (5)
High-peak-power efficient edge-emitting photonic crystal nanocavity lasers (2009) (5)
1.55-μm dual-polarization lasers implemented with compressive- and tensile-strained quantum wells (1995) (5)
Time Behavior of Laser Modes in GaAs Platelet Lasers (1969) (5)
Self-defined AlAs-oxide–current-aperture buried heterostructure vertical cavity surface-emitting laser (1998) (5)
Filter-free four-wave mixing wavelength conversion in semiconductor optical amplifiers (1998) (5)
The Mechanisms and Kinetics of Surface Reactions of Trimethylgallium on GaAs (001) Surfaces and Its Relevance to Atomic Layer Epitaxy (1991) (5)
Sub-milliampere single-quantum-well InGaAs-GaAs-AlGaAs addressable laser arrays (1995) (5)
Submilliampere threshold current InGaAs-GaAs-AlGaAs lasers and laser arrays grown on nonplanar substrates (1995) (5)
Selective area epitaxy by metalorganic chemical vapor deposition– a tool for photonic and novel nanostructure integration (2020) (5)
Thermal processing of strained InGaAs/GaAs quantum well heterostructures bonded to Si via an epitaxial lift-off technique (1997) (5)
Photonic bandgap defect laser (1999) (5)
Experimental measurement of optical phase in microdisk resonators (2004) (5)
Characterization of mixed strain quantum well structures (1997) (5)
Ultralow threshold VCSELs fabricated by selective oxidation from all epitaxial structure (1995) (5)
The role of surface diffusion and wing tilt in the formation of localized stacking faults in high In-content InGaN MQW nanostructures (2016) (4)
THIN SEMICONDUCTOR LASER TO THIN PLATELET OPTICAL COUPLER (1970) (4)
Near‐Bandgap, Narrow‐Spectrum, Low‐Loss, Volume‐Excited GaAs Laser (77°K) with Time‐Uniform Output (1970) (4)
Growth and characterization of device quality GaAs produced by laser-assisted atomic layer epitaxy using triethylgallium (1993) (4)
Growth and doping properties of AlGaAs/GaAs/InGaAs structures on nonplanar substrates for applications to low threshold lasers (1994) (4)
Analysis of nonplanar wave propagation through multilayered Bragg reflectors for folded cavity and vertical cavity surface emitting laser structures (1995) (4)
Growth of GaAs by vacuum atomic layer epitaxy using tertiarybutylarsine (1995) (4)
Selective growth and regrowth of high Al content AlGaAs for use in BH lasers (1998) (4)
Low threshold 630 nm band AlGaInP diode laser with AlAs native oxide current aperture (1999) (4)
Growth of Semiconductor Laser Structures with Integrated Epitaxial Bragg Reflectors on Non-planar Substrates (1992) (4)
Growth of InGaAsP in a stagnation flow vertical reactor using TBP and TBA (1998) (4)
Gain Compression and Thermal Analysis of a Sapphire-Bonded Photonic Crystal Microcavity Laser (2009) (4)
Active semiconductor microdisk switching devices utilizing gain and electroabsorption effects (2002) (4)
Effects of current spreading under oxide current aperture in vertical‐cavity surface‐emitting lasers (1996) (4)
Investigation of InxGa1−xAs/GaAs strained quantum well structures grown on non-planar substrates by MOCVD (1991) (4)
Photonic crystal heterostructure laser (2005) (3)
Ultralow threshold current lasers (1996) (3)
OPTICAL SWITCHES WITH COMBINED BRAGG REFLECTORS AND DOPING SUPERLATTICES (1988) (3)
Three-dimensional microstructural characterization of GaN nonplanar substrate laterally epitaxially overgrown by metalorganic chemical vapor deposition (2005) (3)
Confinement effects of AlAs native-oxide apertures buried in quantum well lasers (1996) (3)
Electroabsorption in AlGaAs/GaAs multiple quantum well structures grown on a GaP transparent substrate (1987) (3)
High-Q buried heterostructure microring resonators (2004) (3)
Photonic crystal heterostructure laser with lattice-shifted cavity (2006) (3)
GaAs optoelectronic static induction transistor for high frequency pulsed power switching (1991) (3)
Laser Assisted Atomic Layer Epitaxy-A Vehicle to Optoelectronic Integration (1991) (3)
Self-defined AlAs oxide-current-aperture buried-heterostructure ridge waveguide InGaAs single-quantum-well diode laser (1999) (3)
8-Channel microdisk CW laser arrays vertically coupled to common output bus waveguides (2004) (3)
Novel fabrication process for vertical resonant coupler with precise coupling efficiency control (1998) (3)
Gunn oscillation in GaAs optically triggered by 1.06 µm radiation (1981) (3)
MP-B2 single longitudinal mode MOCVD GaAlAs-GaAs self-aligned structure lasers (1980) (3)
Sapphire bonded photonic crystal microcavity lasers (2003) (3)
Folded-cavity surface-emitting InGaAs-GaAs lasers with low-threshold current density and high efficiency (1995) (3)
High-Q vertically-coupled microresonators built by wafer-bonding technique (2001) (3)
Modified suspended membrane photonic crystal D/sub 3/ laser cavity with improved sidemode suppression ratio (2005) (3)
60 microWatts of Fiber-Coupled Peak Output Power from an Edge-Emitting Photonic Crystal Heterostructure Laser (2007) (3)
Introduction to the special issue on semiconductor lasers (1987) (2)
The Growth of AIGaAs/GaAs Heterostructures By Atomic Layer Epitaxy (1987) (2)
Scalable synthesis of vertically aligned, catalyst-free gallium arsenide nanowire arrays: towards optimized optical absorption (2012) (2)
Wide Tunability and Large Mode-Suppression in a Multi-Section Semiconductor Laser Using Sampled Gratings (1992) (2)
Real‐time study of the reflection high energy electron diffraction specular beam intensity during atomic layer epitaxy of GaAs (1993) (2)
Wavelength Conversion and Wavelength Routing for High-Efficiency All-Optical Networks: A Proposal for Research on All-Optical Networks (1995) (2)
Synchronous DC-coupled parallel optical data path using three-terminal InGaAs/GaAs lasers (1994) (2)
Sub-milliampere threshold InGaAs/GaAs/AlGaAs laser array elements by single step growth on nonplanar substrates (1994) (2)
Heterojunction Phototransistors For Fiber-Optic Communications (1981) (2)
8-channel tunable MUX/DEMUX using vertically coupled active microdisk resonators (2003) (2)
Optical data timing skews in on-chip optical WDM interconnects (2009) (2)
InGaN/GaN nanorod and nanosheet arrays for InGaN-based LEDs (2011) (2)
Effect of carrier capture on modulation response properties of semiconductor microdisk lasers (2008) (2)
Chirped pulse propagation in saturated traveling wave semiconductor amplifiers (1999) (2)
DISORDER OF AlAs/GaAs SUPERLATTICES BY THE IMPLANTATION AND DIFFUSION OF IMPURITIES. (1983) (2)
Atomic Layer Epitaxy of GaAs and InAs (1989) (2)
Meso- and nanophotonic devices for integrated photonic circuits (2003) (2)
Low Vπ modulators containing InGaAsP∕InP microdisk phase modulators (2007) (2)
Wide-bandwidth Distributed Bragg Reflector Using AlAs Oxide/GaAs Multilayers (1994) (2)
Development of stacked multiple bandgap solar cells (1979) (2)
Small dimension Bragg reflectors formed by air-isolated GaAs layers (1991) (2)
Microresonator devices for DWDM systems (2001) (2)
VCSEL-pumped photonic crystal lasers (2002) (2)
Optical Communication for Integrated Circuits. (1982) (2)
Filter-free wavelength conversion based on non-collinear four-wave mixing in a semiconductor optical amplifier (1997) (2)
Far-fields of photonic crystal microcavity lasers (2004) (2)
Low-threshold oxide stripe GaAs/GaAlAs lasers grown by MOCVD (1982) (2)
Low threshold 1.55 /spl mu/m quantum well lasers grown with tertiarybutylarsine and tertiarybutylphosphine (1994) (2)
MP-B1 photopumped MO-CVD quantum-well Al x Ga 1-x As-GaAs-Al x Ga 1-x As heterostructure lasers (x = 0.4-0.6, L z ≥ 200 Å, T = 4.2-300 K) (1978) (2)
The effect of strain on auger recomhination and temperature sensitivity in 1.5/spl mu/m quantum well lasers (1992) (2)
STACKED MULTIPLE-BANDGAP SOLAR CELLS PREPARED BY CVD TECHNIQUES. (1980) (1)
TA-B3 high-efficiency InGaAsP photovoltaic power converter (1980) (1)
Optoelectronic Integrated Circuits Fabricated Using Atomic Layer Epitaxy (1993) (1)
Investigation of the optical losses in photonic crystal laser cavities by varying the number of lattice periods (2002) (1)
High-Q buried heterostructure resonators for photonic integrated circuits (2005) (1)
Growth of GaN on (0001) sapphire by MOCVD using a multilayer approach in a closed space showerhead reactor (1997) (1)
Effect of strain on 1.5-μm quantum-well lasers (1993) (1)
IIIb-4 high-efficiency GaAlAs/GaAs heterostructure solar cells grown by metalorganic chemical vapor deposition (1977) (1)
An optical filter based on carrier nonlinearities for optical RF channelizing and spectrum analysis (2001) (1)
Element III Segregation During Mocvd Growth on Structured Substrates (1989) (1)
Use of AIAs oxide/GaAs distributed Bragg reflectors to fabricate ultralow-threshold-current VCSELs (1995) (1)
Low threshold 1.3 µm GaInAsP/InP buried optical waveguide lasers (1982) (1)
In-plane thermally tuned silicon on insulator wavelength selective reflector (2011) (1)
Electronic Transport in Ultrathin Heterostructures. (1981) (1)
Silicon-microring-based modulation of 120 Gbps DPSK signal (2013) (1)
High small-signal modulation bandwidth and narrow linewidth microdisk lasers (2008) (1)
GaN nanorods for improved light emitting diode performance (2011) (1)
Novel low threshold InGaAs/GaAs 45° folded cavity surface-emitting laser grown on pre-patterned substrates (1993) (1)
Microresonators for Photonic Integrated Circuits (2008) (1)
All-buried active microring resonators using vernier effects for free spectral range expansion and optical channel configuration (2004) (1)
Novel Active Swithching Components Based on Semiconductor Microdisk Resonators (2002) (1)
A novel optical nonlinearity in a semiconductor gain medium and its applications to wavelength filtering (1994) (1)
Vertical-cavity surface-emitting lasers with spatially adjustable DBR reflectivity to enable free-space photonic repeaters (1998) (1)
Thin films of gallium arsenide on low-cost substrates. Quarterly technical progress report No. 6 and topical report No. 2, January 1, 1978-April 1, 1978 (1978) (1)
Linewidth measurement of sapphire-bonded 2-D photonic crystal lasers (2004) (1)
A tunable optical domain microwave filter suitable for wideband channelizing (2000) (1)
Room Temperature Excitonic Nonlinear Absorption in GaAs/AlGaAs Multiple Quantum Well Structures Grown By Metalorganic Chemical Vapor Deposition (MOCVD)* (1987) (1)
In-Plane Thermally Tuned Silicon-on-Insulator Wavelength Selective Reflector (2010) (1)
Threshold pump power dependence on the spectral alignment between the gain peak and the cavity resonance in InGaAsP photonic crystal lasers (2003) (1)
III-V Nanowire Array Growth by Selective Area Epitaxy (2011) (1)
Laterally Coupled Buried Heterostructure High (2004) (1)
Metalorganic vapor phase epitaxy 1988; Proceedings of the Fourth International Conference, Hakone, Japan, May 16-20, 1988 (1988) (1)
Study of 1.3-/spl mu/m tapered waveguide spotsize transformers (1997) (1)
OVERVIEW OF THE OPTOELECTRONICS SESSIONS AND CHAPTER (2000) (1)
Efficiency and threshold current optimization for 850 nm oxidized VCSELs using a mirror etching technique (1997) (1)
Fabrication of vertically coupled InP microdisk resonators by using smooth, CH/sub 4/-based reactive ion etching methods (2001) (1)
Thin films of gallium arsenide on low-cost substrates. Final report, July 5, 1976--July 2, 1977 (1977) (1)
Asymmetric heterostructure design considerations for high-power laser (2004) (1)
Phonon-assisted recombination in GaAs/AlGaAs multiple-quantum-well structures (1989) (1)
Stripe direction dependence in selective area growth of InGaAsP using TBP and TBA (1997) (1)
Microdisk laser linewidth and spontaneous emission rate enhancement (2008) (1)
Novel technique for measuring nitrogen profiles in GaP : N (1975) (1)
Cathodoluminescence study of disordering of GaAs/AlGaAs quantum wells using an AlAs native oxide and thermal annealing technique (1998) (1)
IIIA-6 GaAlAs/GaAs MOCVD selective epitaxy for monolithic optical device integration with comples GaAs IC's (1982) (1)
WA-B5 narrow-base Al 0.5 Ga 0.5 As/GaAs heterojunction phototransistors grown by metalorganic chemical vapor deposition (1979) (1)
Atomic layer epitaxy for the growth of heterostructures (1988) (1)
The properties of polycrystalline GaAs materials and devices for terrestrial photovoltaic energy conversion (1978) (1)
Formation of Fabry-Perot cavity in one-dimensional and two-dimensional GaAs nanostructures (2014) (1)
Active Semiconductor Microdisk Vertically Coupled to a Waveguide Bus as a Polarization Rotator (2005) (1)
(Invited) Stabilizing Semiconductor-Solution Interfaces Via Chemically Stable but Electronically Defective Coatings (2015) (0)
Photonic Crystal Heterostructure Laser Cavity (2005) (0)
III-V compund based heterostructure opto-thyristor for pulsed power applications (1991) (0)
MOCVD Growth Of AlGaAs On Structured Substrates A New Tool For Device Design (1988) (0)
Effect of compressive strain (0‒1.8%) on performance parameters in 1.-5µm laser diodes using wide quantum wells (1992) (0)
Thin films of gallium arsenide on low-cost substrates. Quarterly project report No. 1, July 5--October 2, 1976 (1976) (0)
IIIA-8 the effect of structural enhancements on the relative performance of n-p-n and p-n-p heterojunction bipolar transistors (1986) (0)
Advanced epitaxial techniques for optoelectronic devices (1990) (0)
Fiber Optic Light Emitting Diode. (1980) (0)
Laser Operation of Lightly Doped and Amphoterically Doped Gallium Arsenide (1970) (0)
Novel coupling modulator design using ring-resonator-based light drop structure (2011) (0)
Narrow Diffused Stripe GaAs/GaAIAs Lasers For High Speed Integrated Optical Transmitters (1982) (0)
Optical and electrical characterization of surface passivated GaAs nanostructures (2014) (0)
Carrier relaxation and recombination in InGaN/GaN quantum heterostructures probed with time-resolved cathodoluminescence (1998) (0)
Apparatus for Analysis of Epitaxial Crystal Growth. (1986) (0)
InGaN/GaN Nanostructure Arrays for LEDs (2012) (0)
AlGaAs-GaAs heterojunction phototransistors for fiber-optical communications (1978) (0)
A Novel Photonic Packet Switch with All-Optical Routing Control (1997) (0)
Laser dynamics: probing microscopic processes in InGaN light emitters (2014) (0)
InGaN / GaN nanostructures for efficient LEDs (2012) (0)
Evaluation of gain saturation behaviour in travelling wave semiconductor amplifiers (1996) (0)
1.5 µm InGaAs/InGaAsP/InP Quantum Dot Lasers Operating cw at Room Temeprature (2005) (0)
Semiconductor optical amplifier and electroabsorption modulator monolithically integrated via selective area growth (2003) (0)
Quantum well heterestrueture lasers (1983) (0)
AlGaAs/GaAs optically controlled wave-plate modulator. (1991) (0)
Ge DX Center in AlGaAs Grown by Organometallic Vapor Phase Epitaxy (1992) (0)
EXCITON LOCALIZATION IN InGaN/GaN QUANTUM WELLS (1998) (0)
Photonic crystal devices (Invited Paper) (2005) (0)
Correction to InGaN/GaN Multiple Quantum Wells Grown on Nonpolar Facets of Vertical GaN Nanorod Arrays. (2018) (0)
High-efficiency three-terminal laser array for optical interconnect (1993) (0)
Optical Loss Determination of Sapphire-Bonded Photonic Crystal Laser Cavities by Varying the Number of Photonic Crystal Cladding Periods (2005) (0)
Low threshold current vertical-cavity surface-emitting lasers with enhanced resistance to heating (1995) (0)
Room Temperature 1.55µm Photonic Crystal Microcavity Lasers Integrated with AlGaAs Oxide Aperture (2004) (0)
Bus-coupled microresonator lasers (2005) (0)
Uniform 20x20 bottom-emitting 850nm VCSEL arrays (2001) (0)
Optical nonlinearities with an alternate growth technique (1987) (0)
Stimulated Emission in Lossy Semiconductor Laser Modes (1970) (0)
SERI PV AR and D University participation program: Annual subcontract report, FY 1986 (1987) (0)
Impact of amplified spontaneous emission on picosecond pump measurements of optical nonlinearities in GaAs/AlGaAs multiple quantum wells (1991) (0)
1.27 Micrometers Receiver Development. (1983) (0)
Room Temperature, CW, Single Mode Laser. (1980) (0)
Modified photonic crystal D/sub 3/ laser cavity for improving side mode suppression ratio (2004) (0)
WA-B5 narrow-base Al<inf>0.5</inf>Ga<inf>0.5</inf>As/GaAs heterojunction phototransistors grown by metalorganic chemical vapor deposition (1979) (0)
Lithographic tuning of 2-D photonic crystal lasers (2002) (0)
Integrable Three Terminal InGaAs/AlGaAs Lasers For OEIC's (1994) (0)
Low threshold quantum well lasers and laser arrays grown by MOCVD on nonplanar substrates (1989) (0)
Low-threshold InGaAs/GaAs single-quantum-well lasers using single-step metalorganic chemical vapor deposition (1994) (0)
GaAs based opto-thyristor for pulsed power applications (1989) (0)
Application Of Metalorganic Chemical Vapor Deposition To Lasers For Integrated Optoelectronics (1981) (0)
Gain-saturation properties of a polarization-insensitive semiconductor amplifier and polarization-encoded wavelength conversion (1994) (0)
Atomic layer growth and processing : symposium held April 29 - May 1, 1991, Anaheim, California, U.S.A. (1991) (0)
Tunable Lasers for Investigation of Fiber Optic Devices, 1997 DURIP Program (1998) (0)
Atomic Layer Epitaxy of III-V Compounds. (1986) (0)
Low Threshold 45° Folded Cavity Surface Emitting Lasers for OEIC’s (1993) (0)
Low threshold 1.3-µm GaInAsP/InP buried heterostructure lasers by liquid-phase epitaxy and metal-organic chemical vapor deposition (1981) (0)
Photonie crystal devices (2005) (0)
Thin films of gallium arsenide on low-cost substrates. Final technical report, July 5, 1976-December 5, 1978 (1980) (0)
850 nm VCSEL's with buried Al/sub x/O/sub y/ current apertures (1997) (0)
AlGaAs waveguide optically controlled directional coupler latch (1993) (0)
Thin films of gallium arsenide on low-cost substrates. Quarterly technical progress report No. 8 and topical report No. 3, April 2-July 1, 1978 (1978) (0)
Low threshold 1.5 mu m quaternary quantum well lasers grown by MOCVD (1992) (0)
Study Of Auger Recombination And Differential Gain On Threshold Current And Temperature Sensitivity In 1.5 /spl mu/m Quantum Well Lasers (1992) (0)
IS A COMPONENT PART OF THE FOLLOWING COMPILATION REPORT : TTTI F : Integrated (2012) (0)
VLSI Photonic Integrated Circuit Components (2005) (0)
Center for Chips with Heterogeneously Integrated Photonics (CHIPS) (CD-ROM) (2005) (0)
1.3 /spl mu/m polarization insensitive tapered waveguide mode conversion structures with mixed quantum well active regions (1996) (0)
Experimental characterization of the reflectance of 60-degree waveguide bends in photonic crystal waveguides (2004) (0)
High Side-Mode-Suppression-Ratio Sapphire-Bonded Photonic Crystal Laser under Continuous-Wave Operation (2006) (0)
Thin polycrystalline films of indium phosphide on low-cost substrates. Quarterly report No. 3, April 3--July 2, 1977 (1977) (0)
QUANTUM WELL LASER STRUCTURE (Invited) (1981) (0)
Lateral collection doping superlattice photodiodes (1988) (0)
Nanowires in energy devices (2011) (0)
Spectral dependence and diffusion effects in the nonlinear optical absorption of GaAs/AlGaAs multiple quantum wells (1987) (0)
Introduction to the issue on optoelectronic materials and processing (1997) (0)
OEIC Transmitters Employing Ultra Low Threshold Three Terminal Lasers. (1996) (0)
Optically gated GaAs thyristors for pulsed power switching (1991) (0)
InGaAs quantum well diode lasers with regrown Al containing layers for application to current confinement structures (1997) (0)
High efficiency epitaxial optical reflector solar cells. Final subcontract report, 1 January 1990--31 October 1992 (1993) (0)
Electrically Tunable Chip-Scale Semiconductor Microdisk Phase Modulators (2006) (0)
1.3 /spl mu/m polarization insensitive amplifier with integrated mode transformer (1997) (0)
Strained InGaAs/InP quantum-well laser diodes for low-threshold operation (1991) (0)
MP-B1 photopumped MO-CVD quantum-well AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructure lasers (x = 0.4-0.6, Lz≥ 200 Å, T = 4.2-300 K) (1978) (0)
Synchronous Dc-coupled Parallel Optical Data Link Using Three-terminal InGaAs/GaAs Lasers (1994) (0)
Active microresonator devices for WDM photonic integrated circuits (2002) (0)
Comparative study of extremely low threshold 1.3/spl mu/m strained and lattice matched quantum well lasers (1992) (0)
Development of High-Efficiency Stacked Multiple-Bandgap Solar Cells. (1980) (0)
High-performance folded-cavity surface-emitting InGaAs/GaAs lasers fabricated by ion-beam-etching technique (1995) (0)
Nonlinear Bragg Reflectors with Doping Superlattices (1988) (0)
Multiple long-wavelength VCSEL arrays for low-cost WDM (1998) (0)
Ultralow Threshold Microlasers. (1997) (0)
TA-B7 phonon-assisted recombination in quantum-well MO-CVD AlxGa1-xAs-GaAs heterostructure lasers (1979) (0)
IIIA-8 IR-red GaAs-AlAs superlattice laser monolithically integrated in a yellow-gap cavity (1981) (0)
Controlled Zn Diffusion for LOW Narrow Stripe GaAlAs/GaAs D (1981) (0)
Numerical investigation of multiple bound States in photonic crystal double heterostructure resonant cavities (2008) (0)
Thin polycrystalline films of indium phosphide on low-cost substrates. Final report, September 30, 1976-March 31, 1978 (1978) (0)
Optical nonlinearities in GaAs/GaAlAs multiple quantum wells fabricated by metalorganic chemical vapor deposition for use in optical signal processing (1987) (0)
Ultrashort Pulse, Monolithic Modelocked Lasers for WDM Systems (2001) (0)
Fabrication of traveling-wave semiconductor optical amplifiers for optical switching applications (1998) (0)
1.55 /spl mu/m dual polarization lasers containing tensile and compressive strained quantum wells (1994) (0)
Nanopatterning with diblock copolymers (2003) (0)
Long-Wavelength Detectors (1982) (0)
Active semiconductor microresonators for photonic integrated circuits (2004) (0)
MP-B8 phonon contribution to quantum-well and to double-heterostructure laser operation (1980) (0)
IVA-1 a monolithic GaInAsP/InP photovoltaic power converter (1981) (0)
Photonic Crystal-Based Waveguide Structures and Interfaces (2005) (0)
Passively mode-locked semiconductor laser under self phase modulation (1999) (0)
Monolithically integrated surface and substrate emitting vertical cavity surface emitting lasers for smart pixels (1998) (0)
Laser operation of lightly doped and amphoterically doped GaAs (1970) (0)
Using all of the Energy from the Sun to Make Power (2013) (0)
Selected Area Epitaxy Applied to Optical Cross Point Switch Technology (2001) (0)
Differential gain, refractive index and linewidth enhancement factor in broad-area semiconductor optical amplifiers (1998) (0)
MP-B2 room-temperature operation of distributed-bragg-confinement Ga1-xAlxAs-GaAs lasers grown by metal-organic chemical vapor deposition (1978) (0)
Low threshold current GaAs/AlGaAs quantum well lasers: modeling and experiment (1990) (0)
High performance wafer-bonded bottom-emitting 850 nm VCSELs on transparent substrates (1999) (0)
Ultralow threshold current lasers (1996) (0)
Technology for active photonic integrated circuits-based on semiconductor microresonators (2004) (0)
Growth of lnP Related Compounds on Stuctured for the Fabrication of Narrow Stripe Lasers (1992) (0)
Lateral Injection Lasers Employing Impurity-induced Disordering (1990) (0)
Thin films of gallium arsenide on low-cost substrates. Quarterly project report No. 2, October 3, 1976--January 1, 1977 (1977) (0)
All-optical routing schemes for networks using wavelength-recognizing switches (1999) (0)
Investigate High Purity GaAs Grown by MOCVD. (1981) (0)
8-channel microdisk CW laser arrays vertically coupled to low-loss common bus waveguides (2003) (0)
lec tricall y - Pumped Vertical- Cavity sers with Al,O,-GaAs Reflectors (1996) (0)
Low threshold SQW GRINSCH In/GaAs/GaAs lasers grown by MOCVD on patterned substrates. (1992) (0)
Thin films of gallium arsenide on low-cost substrates. Quarterly technical progress report No. 5 and topical report No. 1, October 2, 1977-December 31, 1977 (1980) (0)
Thin polycrystalline films of indium phosphide on low-cost substrates. Quarterly report No. 1, September 30, 1976--January 1, 1977 (1977) (0)
Ultralow loss oxide-aperture VCSELs (1998) (0)
Integrated photonic crystal components (2011) (0)
Roomtemperature operation of distributedBraggconfinement Ga1−xAlxAs GaAs lasers grown by metalorganic chemical vapor deposition (2013) (0)
Special Issue: Optoelectronic Device Integration (2012) (0)
Quantum well lasers for optoelectronic integration grown by laser assisted atomic layer epitaxy (1990) (0)
1.5 /spl mu/m InGaAs/InGaAsP/InP quantum dot lasers operating CW at room temperature (2005) (0)
Temperature-engineered growth of low-threshold lasers on nonplanar substrates (1993) (0)
Characterization of photonic crystal structures (2004) (0)
Realization of a High-Contrast Optical Filter by a Semiconductor Double-Disk Resonator (2003) (0)
Low-threshold room-temperature Ga(1-x)AlxAs/GaAs lasers grown by metalorganic chemical vapor deposition (1977) (0)
Chapter 3 - Metalorganic Chemical Vapor Deposition for the Fabrication of Nanostructure Materials (1994) (0)
Spectral equalizers based on saturable semiconductor optical amplifiers (2001) (0)
Epitaxial Processes For Multilayer Electronic Device Structures (1983) (0)
Room temperature cw operation of InGaAs/InGaAsP/lnP quantum dot lasers (2004) (0)
Nonlinear multiple quantum well hetero n-i-p-i structure for photonics (1988) (0)
Characterization Of Long Wavelength Strained Ouanturn Well Laser Diodes (1990) (0)
Room-Temperature Ga(1-x)AlxAs-GaAs Double Heterostructure Lasers Grown by Chemical Vapor Deposition (1978) (0)
Development of high-efficiency stacked multiple-bandgap solar cells. Interim technical report 1 August 78-1 October 79 (1980) (0)

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