Paul Jeremy Dean
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Paul Jeremy Deanchemistry Degrees
Chemistry
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Nanotechnology
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Paul Jeremy Deanengineering Degrees
Engineering
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Materials Science
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Applied Physics
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#863
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Chemistry Engineering
Paul Jeremy Dean's Degrees
- PhD Physics Stanford University
- Masters Materials Science University of California, Berkeley
- Bachelors Chemistry University of California, Berkeley
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(Suggest an Edit or Addition)Paul Jeremy Dean's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- The incorporation and characterisation of acceptors in epitaxial GaAs (1975) (473)
- New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and Germanium (1967) (266)
- Intrinsic and Extrinsic Recombination Radiation from Natural and Synthetic Aluminum-Doped Diamond (1965) (243)
- Intrinsic edge absorption in diamond (1964) (233)
- Intrinsic Absorption-Edge Spectrum of Gallium Phosphide (1966) (201)
- Bound Excitons and Donor-Acceptor Pairs in Natural and Synthetic Diamond (1965) (198)
- Lattice Vibration Spectra of Aluminum Nitride (1967) (173)
- Light-emitting diodes (1970) (161)
- Donor bound-exciton excited states in zinc selenide (1981) (155)
- Pair Spectra and "Edge Emission" in Zinc Selenide (1969) (145)
- Optical studies of the phonons and electrons in gallium nitride (1970) (141)
- Comparison of MOCVD‐Grown with Conventional II‐VI Materials Parameters for EL Thin Films) (1984) (140)
- Absorption and Luminescence of Excitons at Neutral Donors in Gallium Phosphide (1967) (138)
- Inter-impurity recombinations in semiconductors (1973) (138)
- The nature of the predominant acceptors in high quality zinc telluride (1978) (132)
- Shallow-acceptor, donor, free-exciton, and bound-exciton states in high-purity zinc telluride (1980) (121)
- New Red Pair Luminescence from GaP (1968) (116)
- Auger Recombination of Excitons Bound to Neutral Donors in Gallium Phosphide and Silicon (1966) (110)
- Optical Properties of the Group IV Elements Carbon and Silicon in Gallium Phosphide (1968) (107)
- Infrared Donor-Acceptor Pair Spectra Involving the Deep Oxygen Donor in Gallium Phosphide (1968) (105)
- Intrinsic Optical Absorption of Gallium Phosphide between 2.33 and 3.12 eV (1967) (104)
- Two-Electron Transitions in the Luminescence of Excitons Bound to Neutral Donors in Gallium Phosphide (1967) (94)
- Optical Properties of Excitons Bound to Neutral Acceptors in GaP (1971) (91)
- Photoluminescence as a diagnostic of semiconductors (1982) (89)
- The fundamental absorption edge of AlAs and AlP (1970) (86)
- Recombination processes associated with “Deep states” in gallium phosphide (1970) (85)
- Ionization energy of the shallow nitrogen acceptor in zinc selenide (1983) (85)
- The effects of core structure on radiative and non-radiative recombinations at metal ion substituents in semiconductors and phosphors (1978) (83)
- Novel type of optical transition observed in MBE grown CdTe (1984) (83)
- Ultraviolet Intrinsic and Extrinsic Photoconductivity of Natural Diamond (1967) (78)
- Excited states of shallow acceptors in ZnSe (1979) (73)
- Optical properties of undoped organometallic grown ZnSe and ZnS (1982) (73)
- Isoelectronic traps in semiconductors (experimental) (1973) (72)
- The photoluminescence spectra of excitons bound to group II acceptors in indium phosphide (1972) (71)
- The photoluminescence spectrum of bound excitons in indium phosphide and gallium arsenide (1972) (71)
- Electron-Capture ("Internal") Luminescence from the Oxygen Donor in Gallium Phosphide (1968) (68)
- Interimpurity Recombinations Involving the Isoelectronic Trap Bismuth in Gallium Phosphide (1969) (67)
- Interference between Intermediate States in the Optical Properties of Nitrogen-Doped Gallium Phosphide (1967) (65)
- Bound Excitons in Semiconductors (1979) (61)
- Excitonic Molecule Bound to the Isoelectronic Nitrogen Trap in GaP (1969) (60)
- Photocapacitance effects of deep traps in epitaxial GaAs (1976) (60)
- Temperature-Dependent Radiative Recombination Mechanisms in GaP (Zn,O) and GaP (Cd,O) (1968) (59)
- Recombination-enhanced defect reactions strong new evidence for an old concept in semiconductors (1977) (59)
- Donor discrimination and bound exciton spectra in InP (1983) (58)
- Optical properties of ZnSe doped with Ag and Au (1982) (57)
- The location and shape of the conduction band minima in cubic silicon carbide (1977) (56)
- Green Electroluminescence from Gallium Phosphide Diodes near Room Temperature (1967) (56)
- Manganese doping of ZnS and ZnSe epitaxial layers grown by organometallic chemical vapour deposition (1982) (54)
- Excitation Spectrum of Aluminum Acceptors in Diamond under Uniaxial Stress (1967) (53)
- Concentration Quenching of Luminescence by Donors or Acceptors in Gallium Phosphide and the Impurity-Band Auger Model (1968) (52)
- Evidence for exciton binding at Ni impurity sites in ZnSe (1980) (52)
- Optical and capacitance spectroscopy of InP:Fe (1981) (51)
- On the origin of bound exciton lines in indium phosphide and gallium arsenide (1974) (50)
- Isoelectronic Trap Li-Li-O in GaP (1971) (49)
- Zeeman spectra of the principal bound exciton in Sn-doped gallium arsenide (1972) (48)
- Luminescence from natural and man-made diamond in the near infrared (1971) (48)
- Observation of Optical Phonons Bound to Neutral Donors (1970) (48)
- Some properties of the visible luminescence excited in diamond by irradiation in the fundamental absorption edge (1964) (47)
- Absorption, Reflectance, and Luminescence of GaN Single Crystals (1971) (45)
- Copper, the dominant acceptor in refined, undoped zinc telluride (1979) (45)
- Optical Properties of the Donor Tin in Gallium Phosphide (1970) (44)
- Dye laser selective spectroscopy in bulk-grown indium phosphide (1979) (42)
- Photoluminescence studies of the 1.911-eV Cu-related complex in GaP (1982) (42)
- The optical properties of copper in zinc oxide (1981) (41)
- Absorption due to Bound Excitons in Silicon (1967) (40)
- Acceptor levels in gallium arsenide (luminescence measurements) (1973) (40)
- The luminescence of copper in zinc oxide (1983) (36)
- Energy-Dependent Capture Cross Sections and the Photoluminescence Excitation Spectra of Gallium Phosphide above the Threshold for Intrinsic Interband Absorption (1968) (35)
- The origin of the α, β, γ blue no-phonon transitions in ZnO:Cu-A deep-level problem (1981) (35)
- Donor Exciton Satellites in Cubic Silicon Carbide: Multiple Bound Excitons Revisited (1976) (34)
- Role of Phonons in the Oscillatory Photoconductivity Spectrum of Semiconducting Diamond (1969) (34)
- High‐purity ZnSe grown by liquid phase epitaxy (1981) (34)
- Deep states in transition metal diffused gallium phosphide (1981) (32)
- Low-Level Interband Absorption in Phosphorus-Rich Gallium Arsenide-Phosphide (1969) (32)
- The isoelectronic trap bismuth in indium phosphide (1971) (32)
- Identification of donors in vapor grown indium phosphide (1984) (31)
- Recombination Radiation from Diamond (1964) (30)
- New high-energy luminescence bands from Co2+ in ZnSe (1980) (30)
- Magneto-Optical Properties of the Dominant Bound Excitons in Undoped6HSiC (1972) (30)
- Acceptor-Impurity Infrared Absorption in Semiconducting Synthetic Diamond (1965) (30)
- Exciton localisation at impurity pairs in zinc telluride and indium phosphide (1978) (29)
- Photoluminescence excitation spectroscopy of 3d transition-metal ions in GaP and ZnSe (1980) (29)
- Optical properties of the Cu-related characteristic-orange-luminescence center in GaP (1982) (29)
- Electronic structure of ground and excited states of isoelectronic traps (1970) (28)
- Luminescence excitation spectra and recombination radiation of diamond in the fundamental absorption region (1964) (28)
- Recent developments in the optical spectroscopy of II–VI compound semiconductors (1980) (28)
- Spectroscopic studies of ZnSe grown by liquid phase epitaxy (1981) (27)
- Conduction-band-to-acceptor magnetoluminescence in zinc telluride (1978) (27)
- The gallium-site donors germanium and silicon in gallium phosphide (1974) (26)
- Extrinsic Recombination Radiation from Natural Diamond: Exciton Luminescence Associated with theN9Center (1967) (26)
- The complex form of donor energy levels in gallium phosphide (1977) (26)
- The optoelectronic properties of donors in organo-metallic grown zinc selenide (1983) (25)
- Defects in Zn fired ZnTe : Detection of a double acceptor (SiTe ?) (1983) (25)
- Electroluminescence in GaAsxP1−x, InxGa1−xP, and AlxGa1−xP Junctions with x≲0.01 (1971) (25)
- Phonon interactions, piezo-optical properties and the inter-relationship of the N3 and N9 absorption-emission systems in diamond (1967) (25)
- Donor identification in liquid phase epitaxial indium phosphide (1984) (25)
- Magneto-Optical Properties and Recombination Rate of the Green Luminescence in Cubic SiC (1970) (24)
- Magnetoreflectance of the Γ6 — Γ8 exciton in ZnTe (1977) (24)
- Nickel, a persistent inadvertent contaminant in device-grade vapour epitaxially grown gallium phosphide (1977) (24)
- Zeeman Effect and Crystal-Field Splitting of Excitons Bound to Isoelectronic Bismuth in Gallium Phosphide (1969) (24)
- THE NITROGEN ISOELECTRONIC TRAP IN PHOSPHORUS‐RICH GALLIUM ARSENIDE PHOSPHIDE (1969) (24)
- Pair Spectra Involving the Shallow Acceptor Mg in GaP (1970) (24)
- Acceptor excited states in indium phosphide (1979) (23)
- Preparation of Zinc Diphosphides and the Low‐Temperature Luminescence and Absorption of the Tetragonal Polymorph (1970) (22)
- Identification of germanium and tin donors in InP (1984) (22)
- Electron capture luminescence in GaP:O revisited (1981) (21)
- Local vibrational modes of carbon in GaP (1970) (21)
- Zeeman spectroscopy of luminescence from vanadium-doped indium phosphide (1983) (21)
- Near-gap energy levels of InP-luminescence and photoconductivity study (1982) (20)
- The location of the lowest conduction band minima in gallium phosphide from bound exciton luminescence (1976) (20)
- Dielectric Constant of GaP at 1.6°K (1969) (20)
- Residual donors in LEC indium phosphide (1984) (20)
- Band parameters for zinc telluride from bound exciton and donor-acceptor pair excitation luminescence (1978) (20)
- Electronic excitation of diamond by energetic charged particles (1963) (20)
- Free-exciton energy spectrum in InP in a magnetic field (1976) (20)
- Potential-dependent electron and hole g values and quenched diamagnetism in GaP. I. Experimental results and properties of the donor states (1977) (19)
- Capture Modes Revealed by the Study of Line Intensities in GaP Pair Spectra (1970) (19)
- Electron and hole g-factors from magnetoluminescence in ZnTe and CdTe (1982) (19)
- Valley-Orbit Splitting of the Indirect Free Exciton in Silicon (1969) (18)
- Comparisons and contrasts between light emitting diodes and high field electroluminescent devices (1981) (18)
- A model for the neutral donor bound exciton system in InP at high magnetic field (1984) (17)
- REVIEW ARTICLE: New aspects of the oxygen donor in gallium phosphide (1983) (17)
- The Zeeman effect in the spectrum of excitons bound to isoelectronic bismuth in indium phosphide (1974) (17)
- Optical properties of copper-related centres in InP (1983) (17)
- An investigation of the 1.36 eV photoluminescence spectrum of heat-treated InP using Zeeman spectroscopy and strain effects (1984) (17)
- The luminescent centre VGa -OP in GaP: Further evidence (1971) (17)
- Optical properties of Co doped InP (1981) (16)
- Excitonic molecule bound to the isoelectronic trap nitrogen in gallium phosphide (1969) (16)
- Particle Excited Luminescence in Diamond (1960) (16)
- Optoelectronic studies on refined ZnTe and implications for II–VI semiconductors (1979) (16)
- Undulation Spectra of GaP Associated with the Isoelectronic Trap N (1971) (15)
- Electroluminescence in semiconductors (1976) (15)
- Deep levels in Co-doped InP (1982) (15)
- The optical properties of Be, Mg and Zn-diffused gallium phosphide (1971) (15)
- A genuine neutral double acceptor in a II-VI semiconductor-SiTe(?) in ZnTe (1985) (15)
- Optically detected electron resonance in phosphorus-doped ZnTe (1981) (15)
- Resonant donor-bound-exciton luminescence in semiconductors (1980) (14)
- Deep traps in GaAs revealed at high resolution by simple fast photocapacitance methods (1976) (14)
- Excited states of bound exciton complexes in InP (1976) (13)
- The Deep Impurity Conduction Band Charge Transfer Transition In ZnSe:Co (1982) (13)
- Indium Phosphide III . Double Epitaxy Light Emitting Diodes with 1.5%Efficiency at 300°K (1973) (13)
- Bound Exciton Time Decay and the Auger Effect in Zinc Telluride (1982) (13)
- A piezospectroscopic study of deep levels in GaP:Co (1980) (13)
- Deep levels introduced by electron irradiation of InP (1982) (12)
- III–V compound semiconductors (1977) (12)
- New isoelectronic trap luminescence in gallium phosphide (1984) (12)
- Potential-dependent electron and hole g values and quenched diamagnetism in GaP. II. Application of the theory of free and bound holes in a magnetic field to the pseudoacceptors (D 0 , X) (1977) (12)
- Absorption and luminescence of excitons at neutral acceptors in gallium phosphide (1970) (12)
- Doping of LPE layers of CdTe grown from te solutions (1984) (11)
- Shallow acceptor bound exciton and free exciton states in high-purity zinc telluride (1979) (11)
- Exciton recombination processes in zinc selenide (1983) (10)
- Magnetooptical spectroscopy of excited states of bound excitons in ZnO, CdS and ZnTe (1982) (10)
- Photoluminescence studies of deep traps in GaP:Fe (1979) (9)
- Lithium Donors and the Binding of Excitons at Neutral Donors and Acceptors in Gallium Phosphide (1973) (9)
- Optical characterisation of acceptors in doped and undoped VPE InP (1983) (9)
- Excited donor and acceptor states in zinc telluride (1978) (9)
- Excitons in Semiconductors (1983) (8)
- Zeeman spectroscopy of vanadium-doped indium phosphide (1984) (6)
- Crystal field splitting of excitons bound to neutral complexes in GaP (1983) (6)
- Hot Electron Effects in Semiconductor Luminescence (1980) (6)
- Zeeman spectroscopy of crystal-field transitions of Co-doped InP (1983) (6)
- The 7-line luminescence spectrum of (Neeh) in GaP:N, a correction (1973) (6)
- Anomalous Behavior of Nitrogen in Pulled GaP Crystals (1971) (6)
- Uniaxial stress effects and excited states for multiple bound excitons (1977) (6)
- Oxygen in gallium phosphide — A canonical deep donor (1983) (5)
- Thermal behaviour of the Cu-related 2.177 eV bound exciton in GaP (1982) (5)
- Core effects on bound-exciton-neutral-impurity complexes with particular reference to transition-metal impurities (1976) (5)
- Electronic structure of oxygen in gallium phosphide (1983) (5)
- The COL spectrum in gallium phosphide (1981) (5)
- LATTICE DYNAMICS OF GALLIUM PHOSPHIDE. (1968) (5)
- A Localized Exciton Bound to Cadmium and Oxygen in Gallium Phosphide (1968) (4)
- Novel phenomena in donor bound excitons in gallium phosphide (1976) (4)
- A new quasiparticle bound to the isoelectronic trap nitrogen in GaP: A rebuttal (1970) (4)
- Light emitting devices in the U.K. (1973) (4)
- Bombardment Conductivity and Photoconductivity in Rhombic Sulphur (1960) (4)
- Luminescence and birefringence in a semiconducting diamond (1964) (3)
- Photographic method for pulse amplitude analysis (1959) (3)
- The observation of strain effects in the photoluminescence spectrum of excitons bound to neutral acceptors in indium phosphide (1972) (3)
- Magneto-Optical Measurements on H-Implanted 6H SiC (1974) (3)
- Electronic Properties of Crystalline Solids: An Introduction to Fundamentals (1974) (3)
- Radiation Effects in Semiconductors (1972) (3)
- Time-resolved pulsed DC electroluminescence studies in ZnS:Mn, Cu-powder Phosphors (1981) (3)
- Polaron, Zeeman, and Diamagnetic Effect in the Recombination Spectra of Donor Bound Excitons in Cadmium Telluride (1976) (2)
- The effect of uniaxial and hydrostatic pressure on the absorption edge spectrum and the edge excitation spectrum for visible luminescence diamond (1965) (2)
- Evidence for a Double Acceptor Bound Exciton in a II-VI Compound (1984) (2)
- Bound Exciton Luminescence Associated with the Deep Oxygen Donor in Gallium Arsenide (1974) (2)
- Contrast in triple bound excitons in copper-doped gallium phosphide (1984) (2)
- Donor‐acceptor‐type complex in GaAs—Further comment (1980) (2)
- RECENT ADVANCES IN OPTOELECTRONIC DISPLAYS AND MATERIALS (1973) (1)
- Comments on "The future of electroluminescent solids in display applications" and "New display technologies—An editorial viewpoint" (1974) (1)
- Valence band contributions to photoluminescence excitation spectra of tightly bound holes in zincblende semiconductors (1980) (1)
- International workshop on electroluminescence: Bad Stuer, GDR, 16–20 October 1983 (1984) (1)
- Bound and free exciton states in InP (1983) (1)
- Symmetry Determination of Copper-Related Centres in Gap (1985) (0)
- Extended Colour--Some Methods and Applications. (1985) (0)
- The role of phonons in the oscillatory photoconductivity spectrum of semiconducting diamond (1969) (0)
- Applied Solid State Science: Advances in Materials and Device Research Vol 3 (1973) (0)
- SPECTROSCOPIE DE DÉFAUTS — LUMINESCENCE ITHE ANALYSIS OF WIDE BAND GAP SEMICONDUCTORS BY OPTICAL SPECTROSCOPY (1974) (0)
- INDIUM PHOSPHIDE PART 3, DOUBLE EPITAXY LIGHT EMITTING DIODES WITH 1,5 PERCENT EFFICIENCY AT 300 K (1974) (0)
- Solid State Physics Vol 29 – Advances in Research and Applications (1975) (0)
- Deep Levels in Semiconductors (1983) (0)
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