Pan Handian
#128,123
Most Influential Person Now
Chinese legal scholar and translator
Pan Handian's AcademicInfluence.com Rankings
Pan Handianlaw Degrees
Law
#2920
World Rank
#3650
Historical Rank
International Law
#2179
World Rank
#2589
Historical Rank

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Law
Why Is Pan Handian Influential?
(Suggest an Edit or Addition)According to Wikipedia, Pan Handian , also known as Pan Zongxun , was a Chinese legal scholar, translator, and writer. He was recognized as a founder of comparative law in China. He served as Professor and Director of the Institute of Comparative Law at China University of Political Science and Law, and editor-in-chief of the Journal of Comparative Law. He was conferred the Lifetime Achievement Award in Translation by the Translators Association of China in 2012.
Pan Handian's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Luminescence of heteroepitaxial zinc oxide (1988) (277)
- Influence of sputtering parameter on the optical and electrical properties of zinc-doped indium oxide thin films (2005) (50)
- High-Temperature Leakage Improvement in Metal–Insulator–Metal Capacitors by Work–Function Tuning (2007) (49)
- Growth and characterization of heteroepitaxial ZnO thin films by organometallic chemical vapor deposition (1988) (47)
- Low-temperature processing of sol-gel derived La0.5Sr0.5MnO3 buffer electrode and PbZr0.52Ti0.48O3 films using CO2 laser annealing (2003) (45)
- Improved High-Temperature Leakage in High-Density MIM Capacitors by Using a TiLaO Dielectric and an Ir Electrode (2007) (44)
- Use of a High-Work-Function Ni Electrode to Improve the Stress Reliability of Analog $\hbox{SrTiO}_{3}$ Metal–Insulator–Metal Capacitors (2007) (36)
- Thermal Leakage Improvement by Using a High-Work-Function Ni Electrode in High- κ TiHfO Metal–Insulator–Metal Capacitors (2007) (24)
- Electrical Properties and Microstructures of PbZrTiO3 Thin Films Prepared by Laser Annealing Techniques (2002) (20)
- Improvement of the Performance of TiHfO MIM Capacitors by Using a Dual Plasma Treatment of the Lower Electrode (2008) (19)
- Improved Stress Reliability of Analog TiHfO Metal–Insulator–Metal Capacitors Using High-Work-Function Electrode (2007) (14)
- Nitrogen Doping of ZnO Prepared by Organometallic Chemical Vapor Deposition (1989) (13)
- Very High Density ( 44 fF ∕ μm2 ) SrTiO3 MIM Capacitors for RF Applications (2007) (12)
- Epitaxial growth of InN film on intermediate oxide buffer layer by RF-MOMBE (2011) (9)
- Substrate Effect on Pb0.6Sr0.4TiO3 thin film growth by pulsed-laser-deposition (1999) (9)
- High-Performance MIM Capacitors Using a High- κ TiZrO Dielectric (2008) (9)
- ZnO transparent thin-film transistors with HfO/sub 2//Ta/sub 2/O/sub 5/ stacking gate dielectrics (2008) (7)
- Ferroelectric properties of Pb0.6Sr0.4TiO3 thin films on perovskite buffer layers (1999) (7)
- Microstructures and properties of semi-conductive Pb0.6Sr0.4TiO3 ceramics using PbTiO3-coated SrTiO3 powders (2001) (5)
- Domain boundary pinning and nucleation of ferroelectric (Pb1−xSrx)TiO3 ceramics (2001) (4)
- Low-Temperature Preparation of PbZrTiO 3 /TiNi/Si Heterostructures by Laser Annealing (2002) (4)
- Complementary sample preparation strategies (PVD/BEXP) combining with multifunctional SPM for the characterizations of battery interfacial properties (2021) (3)
- Contribution of electrodes to electrical properties of ferroelectric Pb0.6Sr0.4TiO3 thin films (2001) (2)
- Ferroelectric and Pyroelectric Properties of Sol-Gel Derived PbCaTiO3 Thin Films Using Low-Temperature Annealing (2003) (2)
- Photoluminescent Properties of ZnO Layers Prepared by Organometallic Chemical Vapor Deposition (1987) (2)
- Electrical Properties of PbSrTiO 3 Films on Stainless Steel Substrates with LaSrMnO 3 Buffer layers (2002) (1)
- Low Temperature Processes of Organic Thin Film Transistor with Gate Dielectric of Silicon Dioxide Deposited by Scanning Atmospheric-Pressure Technology (2008) (0)
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