Pan Handian
#128,123
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Chinese legal scholar and translator
Pan Handian's AcademicInfluence.com Rankings
Pan Handianlaw Degrees
Law
#2920
World Rank
#3650
Historical Rank
International Law
#2179
World Rank
#2589
Historical Rank
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Law
Why Is Pan Handian Influential?
(Suggest an Edit or Addition)According to Wikipedia, Pan Handian , also known as Pan Zongxun , was a Chinese legal scholar, translator, and writer. He was recognized as a founder of comparative law in China. He served as Professor and Director of the Institute of Comparative Law at China University of Political Science and Law, and editor-in-chief of the Journal of Comparative Law. He was conferred the Lifetime Achievement Award in Translation by the Translators Association of China in 2012.
Pan Handian's Published Works
Published Works
- Luminescence of heteroepitaxial zinc oxide (1988) (277)
- Influence of sputtering parameter on the optical and electrical properties of zinc-doped indium oxide thin films (2005) (50)
- High-Temperature Leakage Improvement in Metal–Insulator–Metal Capacitors by Work–Function Tuning (2007) (49)
- Growth and characterization of heteroepitaxial ZnO thin films by organometallic chemical vapor deposition (1988) (47)
- Low-temperature processing of sol-gel derived La0.5Sr0.5MnO3 buffer electrode and PbZr0.52Ti0.48O3 films using CO2 laser annealing (2003) (45)
- Improved High-Temperature Leakage in High-Density MIM Capacitors by Using a TiLaO Dielectric and an Ir Electrode (2007) (44)
- Use of a High-Work-Function Ni Electrode to Improve the Stress Reliability of Analog $\hbox{SrTiO}_{3}$ Metal–Insulator–Metal Capacitors (2007) (36)
- Thermal Leakage Improvement by Using a High-Work-Function Ni Electrode in High- κ TiHfO Metal–Insulator–Metal Capacitors (2007) (24)
- Electrical Properties and Microstructures of PbZrTiO3 Thin Films Prepared by Laser Annealing Techniques (2002) (20)
- Improvement of the Performance of TiHfO MIM Capacitors by Using a Dual Plasma Treatment of the Lower Electrode (2008) (19)
- Improved Stress Reliability of Analog TiHfO Metal–Insulator–Metal Capacitors Using High-Work-Function Electrode (2007) (14)
- Nitrogen Doping of ZnO Prepared by Organometallic Chemical Vapor Deposition (1989) (13)
- Very High Density ( 44 fF ∕ μm2 ) SrTiO3 MIM Capacitors for RF Applications (2007) (12)
- Epitaxial growth of InN film on intermediate oxide buffer layer by RF-MOMBE (2011) (9)
- Substrate Effect on Pb0.6Sr0.4TiO3 thin film growth by pulsed-laser-deposition (1999) (9)
- High-Performance MIM Capacitors Using a High- κ TiZrO Dielectric (2008) (9)
- ZnO transparent thin-film transistors with HfO/sub 2//Ta/sub 2/O/sub 5/ stacking gate dielectrics (2008) (7)
- Ferroelectric properties of Pb0.6Sr0.4TiO3 thin films on perovskite buffer layers (1999) (7)
- Microstructures and properties of semi-conductive Pb0.6Sr0.4TiO3 ceramics using PbTiO3-coated SrTiO3 powders (2001) (5)
- Domain boundary pinning and nucleation of ferroelectric (Pb1−xSrx)TiO3 ceramics (2001) (4)
- Low-Temperature Preparation of PbZrTiO 3 /TiNi/Si Heterostructures by Laser Annealing (2002) (4)
- Complementary sample preparation strategies (PVD/BEXP) combining with multifunctional SPM for the characterizations of battery interfacial properties (2021) (3)
- Contribution of electrodes to electrical properties of ferroelectric Pb0.6Sr0.4TiO3 thin films (2001) (2)
- Ferroelectric and Pyroelectric Properties of Sol-Gel Derived PbCaTiO3 Thin Films Using Low-Temperature Annealing (2003) (2)
- Photoluminescent Properties of ZnO Layers Prepared by Organometallic Chemical Vapor Deposition (1987) (2)
- Electrical Properties of PbSrTiO 3 Films on Stainless Steel Substrates with LaSrMnO 3 Buffer layers (2002) (1)
- Low Temperature Processes of Organic Thin Film Transistor with Gate Dielectric of Silicon Dioxide Deposited by Scanning Atmospheric-Pressure Technology (2008) (0)
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