Paul Cameron Mcintyre
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Engineering
Paul Cameron Mcintyre's Degrees
- PhD Electrical Engineering Stanford University
- Masters Electrical Engineering Stanford University
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(Suggest an Edit or Addition)Paul Cameron Mcintyre's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- High-κ dielectrics for advanced carbon-nanotube transistors and logic gates (2002) (843)
- Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation. (2011) (630)
- The Properties of Ferroelectric Films at Small Dimensions (2000) (471)
- Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics (2003) (396)
- Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric (2002) (308)
- Effect of growth conditions on the properties and morphology of chemically derived epitaxial thin films of Ba2YCu3O7−x on (001) LaAlO3 (1992) (292)
- Metalorganic deposition of high‐Jc Ba2YCu3O7−x thin films from trifluoroacetate precursors onto (100) SrTiO3 (1990) (244)
- Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition (2003) (224)
- Germanium nanowire epitaxy: shape and orientation control. (2006) (206)
- Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition (2001) (193)
- Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride (2017) (189)
- Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer (2004) (186)
- Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes. (2016) (183)
- Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals (2010) (182)
- Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density (2008) (168)
- Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates (2010) (159)
- Effects of catalyst material and atomic layer deposited TiO2 oxide thickness on the water oxidation performance of metal–insulator–silicon anodes (2013) (153)
- Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films (2009) (137)
- Vertically oriented germanium nanowires grown from gold colloids on silicon substrates and subsequent gold removal. (2007) (136)
- Synthesis and strain relaxation of Ge-core/Si-shell nanowire arrays. (2008) (135)
- Interfacial characteristics of HfO2 grown on nitrided Ge (100) substrates by atomic-layer deposition (2004) (131)
- Atomic layer deposition of ZrO2 on W for metal-insulator-metal capacitor application (2003) (130)
- A sub-400/spl deg/C germanium MOSFET technology with high-/spl kappa/ dielectric and metal gate (2002) (127)
- Preparation of biaxially aligned cubic zirconia films on pyrex glass substrates using ion-beam assisted deposition (1993) (125)
- Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy (2003) (122)
- Atomic layer deposition of high-/spl kappa/ dielectric for germanium MOS applications - substrate (2004) (119)
- Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors (2002) (119)
- Investigation of Self-Assembled Monolayer Resists for Hafnium Dioxide Atomic Layer Deposition (2005) (117)
- A Distributed Bulk-Oxide Trap Model for $\hbox{Al}_{2} \hbox{O}_{3}$ InGaAs MOS Devices (2012) (114)
- Spinodal decomposition in amorphous metal–silicate thin films: Phase diagram analysis and interface effects on kinetics (2002) (112)
- Ge based high performance nanoscale MOSFETs (2005) (111)
- High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates. (2002) (109)
- Epitaxial nucleation and growth of chemically derived Ba2YCu3O7−x thin films on (001) SrTiO3 (1995) (103)
- Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors (2009) (102)
- Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification (2005) (101)
- Self-assembled monolayer resist for atomic layer deposition of HfO2 and ZrO2 high-κ gate dielectrics (2004) (101)
- Nature of germanium nanowire heteroepitaxy on silicon substrates (2006) (101)
- Thermal Stability of Mixed Cation Metal Halide Perovskites in Air. (2018) (94)
- Advanced Gate Stacks for High-Mobility Semiconductors (2007) (93)
- New method for determining flat-band voltage in high mobility semiconductors (2013) (90)
- Nanoscale germanium MOS Dielectrics-part II: high-/spl kappa/ gate dielectrics (2006) (89)
- Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation (2009) (88)
- Metastability of Au-Ge liquid nanocatalysts: Ge vapor-liquid-solid nanowire growth far below the bulk eutectic temperature. (2007) (87)
- $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth (2009) (87)
- Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices (2012) (82)
- Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs (2004) (81)
- Dynamic Structure and Chemistry of the Silicon Solid-Electrolyte Interphase Visualized by Cryogenic Electron Microscopy (2019) (81)
- Inhibiting strain-induced surface roughening: dislocation-free Ge/Si and Ge/SiGe core-shell nanowires. (2009) (77)
- Heteroepitaxial growth of chemically derived ex situ Ba2YCu3O7−x thin films (1994) (76)
- Electrical properties of thin film zirconia grown by ultraviolet ozone oxidation (2002) (76)
- Size-dependent polymorphism in HfO2 nanotubes and nanoscale thin films (2009) (73)
- Crystallization kinetics and microstructure-dependent leakage current behavior of ultrathin HfO2 dielectrics: In situ annealing studies (2004) (71)
- Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices (2010) (69)
- Morphological instability of misfit-strained core-shell nanowires (2008) (65)
- Interface-controlled layer exchange in metal-induced crystallization of germanium thin films (2010) (65)
- Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching (2017) (64)
- Thermal stability of polycrystalline silicon electrodes on ZrO2 gate dielectrics (2002) (64)
- Semiconductor nanowires: to grow or not to grow? (2020) (62)
- Atomic Layer Deposited Corrosion Protection: A Path to Stable and Efficient Photoelectrochemical Cells. (2016) (62)
- High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si. (2006) (60)
- Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures. (2015) (59)
- Effect of oxygen stoichiometry on the electrical properties of zirconia gate dielectrics (2001) (58)
- Growth and characterization of ultrathin zirconia dielectrics grown by ultraviolet ozone oxidation (2001) (58)
- Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators (2008) (58)
- Interface-State Modeling of $\hbox{Al}_{2}\hbox{O}_{3}$ –InGaAs MOS From Depletion to Inversion (2012) (57)
- Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties (2011) (56)
- Improvement in High-$k$$(hboxHfO_2/hboxSiO_2)$Reliability by Incorporation of Fluorine (2006) (54)
- ALD resist formed by vapor-deposited self-assembled monolayers. (2007) (54)
- From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires. (2016) (53)
- HfO2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition (2008) (53)
- Electrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers (2007) (52)
- Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density (2009) (52)
- O18 tracer diffusion in Pb(Zr,Ti)O3 thin films: A probe of local oxygen vacancy concentration (2005) (52)
- Dynamic thermal emission control with InAs-based plasmonic metasurfaces (2018) (52)
- Increased wear resistance of electrodeposited chromium through applications of plasma source ion implantation techniques (1996) (51)
- A germanium NMOSFET process integrating metal gate and improved hi-/spl kappa/ dielectrics (2003) (51)
- Photoemission studies of passivation of germanium nanowires (2005) (51)
- Orientation selection in thin platinum films on (001) MgO (1995) (51)
- Effect of applied mechanical strain on the ferroelectric and dielectric properties of Pb(Zr0.35Ti0.65)O3 thin films (2003) (50)
- Interfacial characteristics of HfO2 films grown on strained Si0.7Ge0.3 by atomic-layer deposition (2004) (50)
- Core-Shell Germanium/Germanium-Tin Nanowires Exhibiting Room-Temperature Direct- and Indirect-Gap Photoluminescence. (2016) (50)
- Chemical states and electronic structure of a HfO(-2) / Ge(001) interface (2005) (49)
- Resistive Switching Mechanism in $\hbox{Zn}_{x}\hbox{Cd}_{1 - x}\hbox{S}$ Nonvolatile Memory Devices (2007) (49)
- Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen (2013) (48)
- Modified phonon confinement model for Raman spectroscopy of nanostructured materials (2010) (47)
- Effect of impurities on the fixed charge of nanoscale HfO2 films grown by atomic layer deposition (2006) (46)
- Phase Separation in Hafnium Silicates for Alternative Gate Dielectrics Influence on the Unoccupied States (2003) (46)
- Chemical Bonding, Interfaces, and Defects in Hafnium Oxide∕Germanium Oxynitride Gate Stacks on Ge(100) (2008) (44)
- Equilibrium Point Defect and Electronic Carrier Distributions near Interfaces in Acceptor-Doped Strontium Titanate (2004) (44)
- Influence of Ge concentration and compressive biaxial stress on interdiffusion in Si-rich SiGe alloy heterostructures (2005) (44)
- Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts. (2017) (44)
- Microstructure of (Ba, Sr)TiO3 thin films deposited by physical vapor deposition at 480 °C and its influence on the dielectric properties (2000) (43)
- Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride. (2017) (42)
- Atomic layer deposition of ultrathin metal-oxide films for nano-scale device applications (2006) (42)
- Conditions for subeutectic growth of Ge nanowires by the vapor-liquid-solid mechanism (2007) (42)
- Single-crystal germanium layers grown on silicon by nanowire seeding. (2009) (41)
- Chemical states and electrical properties of a high-k metal oxide/silicon interface with oxygen-gettering titanium-metal-overlayer (2006) (41)
- MICROSTRUCTURE DEVELOPMENT OF SOL-GEL DERIVED EPITAXIAL LINBO3 THIN FILMS (1995) (41)
- Zirconia grown by ultraviolet ozone oxidation on germanium (100) substrates (2004) (40)
- A Distributed Model for Border Traps in MOS Devices (2011) (39)
- Thickness-dependent phase evolution of polycrystalline Pb(Zr0.35Ti0.65)O3 thin films (2002) (39)
- Analysis of x-ray diffraction as a probe of interdiffusion in Si/SiGe heterostructures (2003) (39)
- Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric (2011) (37)
- Atomic Layer Deposition of Hafnium Oxide on Ge and GaAs Substrates: Precursors and Surface Preparation (2008) (37)
- Bulk and Interfacial Oxygen Defects in HfO2 Gate Dielectric Stacks: A Critical Assessment (2007) (36)
- Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers (2002) (36)
- Formation of an interfacial Zr-silicate layer between ZrO2 and Si through in situ vacuum annealing (2005) (36)
- Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001) (2010) (36)
- Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al2O3/InGaAs(100) interfaces (2013) (36)
- Oxidant prepulsing of Ge (100) prior to atomic layer deposition of Al2O3: In situ surface characterization (2009) (36)
- Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (2011) (36)
- The Characterization and Passivation of Fixed Oxide Charges and Interface States in the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{InGaAs}$ MOS System (2013) (35)
- A Distributed Model for Border Traps in $\hbox{Al}_{2} \hbox{O}_{3}-\hbox{InGaAs}$ MOS Devices (2011) (35)
- Deuterium-induced degradation of (Ba, Sr)TiO3 films (2000) (34)
- Microstructural evolution of ZrO2?HfO2 nanolaminate structures grown by atomic layer deposition (2004) (34)
- Ultraviolet-Ozone Oxidation of Metal Films (2003) (34)
- Effect of Y doping and composition-dependent elastic strain on the electrical properties of (Ba,Sr)TiO3 thin films deposited at 520 °C (2005) (34)
- Thermal stability and surface passivation of Ge nanowires coated by epitaxial SiGe shells. (2012) (34)
- Interdiffusion in epitaxial Co/Pt multilayers (1997) (33)
- Epitaxy of Pt thin films on (001) MgO—I. Interface energetics and misfit accommodation (1997) (33)
- Practical challenges in the development of photoelectrochemical solar fuels production (2020) (33)
- Charge trapping studies on ultrathin ZrO2 and HfO2 high-k dielectrics grown by room temperature ultraviolet ozone oxidation (2004) (33)
- Tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition. (2014) (33)
- Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices (2011) (33)
- Texture development in Ba 2 YCu 3 O 7− x films from trifluoroacetate precursors (1990) (33)
- Titanium Oxide Crystallization and Interface Defect Passivation for High Performance Insulator-Protected Schottky Junction MIS Photoanodes. (2016) (33)
- Doping effects on the kinetics of solid-phase epitaxial growth of amorphous alumina thin films on sapphire (1995) (32)
- Microstructural inhomogeneities in chemically derived Ba2YCu3O7− x thin films: Implications for flux pinning (1994) (32)
- Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates. (2016) (32)
- Ultrathin zirconia/SiO2 dielectric stacks grown by ultraviolet–ozone oxidation (2002) (31)
- Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition. (2015) (31)
- Nitride passivation of the interface between high-k dielectrics and SiGe (2016) (30)
- Conductance and capacitance of bilayer protective oxides for silicon water splitting anodes (2016) (30)
- High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications (2007) (29)
- Oxidation kinetics of TiN layers: Exposed and beneath Pt thin films (1997) (29)
- FORMATION OF IRON OR CHROMIUM DOPED EPITAXIAL SAPPHIRE THIN FILMS ON SAPPHIRE SUBSTRATES (1995) (28)
- Atomic Layer Deposition of Y2O3 ∕ ZrO2 Nanolaminates A Route to Ultrathin Solid-State Electrolyte Membranes (2007) (27)
- Epitaxy of Pt thin films on (001) MgO-II : Orientation evolution from nucleation through coalescence (1997) (27)
- Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN (2012) (27)
- Film and interface layer properties of ultraviolet-ozone oxidized hafnia and zirconia gate dielectrics on silicon substrates (2004) (27)
- Atomic Layer Deposited Hafnium Oxide Gate Dielectrics for Charge-Based Biosensors (2010) (27)
- Mobile Ferroelastic Domain Walls in Nanocrystalline PZT Films: the Direct Piezoelectric Effect (2011) (27)
- Nucleation and growth kinetics during metal-induced layer exchange crystallization of Ge thin films at low temperatures (2012) (26)
- Microstructural study of epitaxial platinum and Permalloy/platinum films grown on (0001) sapphire (2001) (26)
- Silicon-germanium interdiffusion in high-germanium-content epitaxial heterostructures (2008) (26)
- Comparative Study on Electrical and Microstructural Characteristics of ZrO2 and HfO2 Grown by Atomic Layer Deposition (2005) (26)
- Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance. (2016) (25)
- High-quality III–V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication (2009) (25)
- Interface studies of ALD-grown metal oxide insulators on Ge and III-V semiconductors (Invited Paper) (2009) (25)
- ALADDIN: the 1024x1024 InSb array--design, description, and results (1996) (24)
- Transmission electron microscopy investigation of biaxial alignment development in YSZ films fabricated using ion beam assisted deposition (1996) (24)
- Gold-catalyzed vapor-liquid-solid germanium-nanowire nucleation on porous silicon. (2010) (24)
- Effects of oxide thickness and temperature on dispersions in InGaAs MOS C-V characteristics (2014) (24)
- Hexagonal close-packed structure of au nanocatalysts solidified after ge nanowire vapor-liquid-solid growth. (2010) (23)
- First principles study of the HfO2∕SiO2 interface: Application to high-k gate structures (2007) (21)
- Mechanism of germanium plasma nitridation (2006) (21)
- Deuterium in (Ba,Sr)TiO3 thin films: Kinetics and mechanisms of incorporation and removal during annealing (2001) (20)
- Ultralow Defect Density at Sub-0.5 nm HfO2/SiGe Interfaces via Selective Oxygen Scavenging. (2018) (20)
- Fluorine incorporation at HfO2∕SiO2 interfaces in high-k metal-oxide-semiconductor gate stacks: Local electronic structure (2007) (20)
- Nanocrystalline BaTiO 3 from freeze-dried nitrate solutions (1996) (20)
- Z-contrast and electron energy loss spectroscopy study of passive layer formation at ferroelectric PbTiO3∕Pt interfaces (2005) (20)
- Molecular-beam epitaxial growth of III-V semiconductors on Ge/Si for metal-oxide-semiconductor device fabrication (2008) (20)
- Origin and implications of the observed rhombohedral phase in nominally tetragonal Pb(Zr0.35Ti0.65)O3 thin films (2003) (20)
- Kinetics of germanium nanowire growth by the vapor-solid-solid mechanism with a Ni-based catalyst (2013) (19)
- Contact Selectivity Engineering in a 2 μm Thick Ultrathin c-Si Solar Cell Using Transition-Metal Oxides Achieving an Efficiency of 10.8. (2017) (19)
- Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices. (2016) (19)
- The effects of substrate surface steps on the microstructure of epitaxial Ba2YCu3O7−x thin films on (001) LaAlO3 (1995) (19)
- Comparison of Bulk-Oxide Trap Models: Lumped Versus Distributed Circuit (2013) (19)
- Oxygen tracer studies of ferroelectric fatigue in Pb(Zr,Ti)O3 thin films (2002) (19)
- Size effects in vapor-solid-solid Ge nanowire growth with a Ni-based catalyst (2012) (19)
- Misfit dislocation dissociation and Lomer formation in low mismatch SiGe/Si heterostructures (2005) (18)
- Lead zirconate titanate ferroelectric thin film capacitors: Effects of surface treatments on ferroelectric properties (2007) (18)
- Vertical Germanium Nanowire Arrays in Microfluidic Channels for Charged Molecule Detection (2009) (18)
- Isolating the Photovoltaic Junction: Atomic Layer Deposited TiO2-RuO2 Alloy Schottky Contacts for Silicon Photoanodes. (2016) (18)
- Atomic Layer Deposited TiO2–IrOx Alloys Enable Corrosion Resistant Water Oxidation on Silicon at High Photovoltage (2018) (18)
- A three-dimensional phase field model for nanowire growth by the vapor–liquid–solid mechanism (2014) (18)
- Kinetics and mechanisms of TiN oxidation beneath Pt thin films (1997) (18)
- Ultrafast electron and phonon response of oriented and diameter-controlled germanium nanowire arrays. (2014) (18)
- Effects of surface oxide formation on germanium nanowire band-edge photoluminescence (2013) (18)
- Structural studies of ultrathin zirconia dielectrics (2002) (17)
- Leakage Currents in CVD (Ba,Sr)TiO 3 Thin Films (1996) (17)
- Coupling of coherent misfit strain and composition distributions in core–shell Ge/Ge1-xSnx nanowire light emitters (2019) (17)
- ALD-TiO2 Preparation and Characterization for Metal-Insulator-Silicon Photoelectrochemical Applications (2013) (17)
- Understanding Photovoltage in Insulator-Protected Water Oxidation Half-Cells (2016) (17)
- Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface. (2016) (17)
- Point defect equilibrium in strontium titanate thin films (2001) (17)
- Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As ( 001 ) (2009) (16)
- Direct-gap photoluminescence from germanium nanowires (2012) (16)
- Structural analysis of coexisting tetragonal and rhombohedral phases in polycrystalline Pb(Zr(0.35)Ti(0.65))O(3) thin films (2003) (16)
- >10% solar-to-hydrogen efficiency unassisted water splitting on ALD-protected silicon heterojunction solar cells (2019) (16)
- Sulfur passivation for the formation of Si-terminated Al 2 O 3/ SiGe(0 0 1) interfaces (2016) (16)
- Interface Layers for High-k/Ge Gate Stacks: Are They Necessary? (2006) (16)
- Growth mode control for direct-gap core/shell Ge/GeSn nanowire light emission (2020) (15)
- EOT Scaling of ${\rm TiO}_{2}/{\rm Al}_{2}{\rm O}_{3}$ on Germanium pMOSFETs and Impact of Gate Metal Selection (2013) (15)
- Group IV semiconductor nanowire arrays: epitaxy in different contexts (2010) (15)
- The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces. (2015) (15)
- Ir-electroded BST thin film capacitors for 1 giga-bit DRAM application (1996) (15)
- Effects of chemical stability of platinum/lead zirconate titanate and iridium oxide/lead zirconate titanate interfaces on ferroelectric thin film switching reliability (2007) (15)
- Spontaneous, Defect-Free Kinking via Capillary Instability during Vapor-Liquid-Solid Nanowire Growth. (2016) (14)
- III-V MOSFETs: Scaling laws, scaling limits, fabrication processes (2010) (13)
- Titania/Alumina Bilayer Gate Dielectrics for Ge MOS Devices: Frequency- and Temperature-Dependent Electrical Characteristics (2010) (13)
- In Situ As2 Decapping and Atomic Layer Deposition of Al2O3 on n-InGaAs(100) (2012) (13)
- Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks. (2017) (13)
- Problems with metal-oxide high-/spl kappa/ dielectrics due to 1/t dielectric relaxation current in amorphous materials (2003) (13)
- Polarization recovery of fatigued Pb(Zr,Ti)O3 thin films: Switching current studies (2003) (13)
- The effects of forming gas anneal on the electrical characteristics of ir-electroded BST thin film capacitors (1997) (13)
- Ultrathin high-/spl kappa/ gate dielectric technology for germanium MOS applications (2002) (13)
- Mixed‐state behavior in large magnetic fields of high‐temperature superconducting films prepared by metalorganic deposition (1991) (12)
- Phase Field Model for Morphological Transition in Nanowire Vapor–Liquid–Solid Growth (2017) (12)
- Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks. (2016) (12)
- Comparison of the surface morphology and microstructure of in situ and ex situ derived YBa2Cu3O7−x thin films (1993) (12)
- Ge on Si by novel heteroepitaxy for high efficiency near infrared photodetection (2006) (12)
- Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110). (2017) (12)
- Oxide-encapsulated vertical germanium nanowire structures and their DC transport properties (2008) (12)
- Ultrafast Carrier Dynamics of a Photo-Excited Germanium Nanowire–Air Metamaterial (2015) (12)
- Design and growth of III–V nanowire solar cell arrays on low cost substrates (2010) (12)
- The Role of Catalyst Adhesion in ALD-TiO2 Protection of Water Splitting Silicon Anodes. (2018) (12)
- Technology development & design for 22 nm InGaAs/InP-channel MOSFETs (2008) (12)
- Border trap reduction in Al2O3/InGaAs gate stacks (2015) (11)
- Engineering High- k/SiGe Interface with ALD Oxide for Selective GeO x Reduction. (2019) (11)
- Oxidation-enhanced interdiffusion in Si1−xGex∕Si1−yGey superlattices (2007) (11)
- Strain relaxation mechanisms in compressively strained thin SiGe-on-insulator films grown by selective Si oxidation (2011) (10)
- The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stack (2014) (10)
- Atomic Layer Deposited TiO2–IrOx Alloy as a Hole Transport Material for Perovskite Solar Cells (2018) (10)
- Analysis of electrically biased paramagnetic defect centers in HfO2 and HfxSi1−xO2/(100)Si interfaces (2008) (10)
- Point defect distributions and their electrical effects on (Ba,Sr)TiO3/Pt thin films (2003) (10)
- The 2022 solar fuels roadmap (2022) (10)
- Directed synthesis of germanium oxide nanowires by vapor–liquid–solid oxidation (2012) (10)
- Inelastic electron tunneling study of crystallization effects and defect energies in hafnium oxide gate dielectrics (2011) (10)
- Effect and extraction of series resistance in A 2 3 -InGaAs MOS with bulk-oxide trap (2013) (10)
- Angular dependence of critical currents of high temperature superconducting films in high magnetic fields prepared by metalorganic deposition (1992) (10)
- Fermi level pinning in metal/Al2O3/InGaAs gate stack after post metallization annealing (2015) (9)
- III-V/Ge Channel Engineering for Future CMOS (2009) (9)
- Strain Enhanced High Efficiency Germanium Photodetectors in the Near Infrared for Integration with Si (2006) (9)
- III-V nMOSFETs - Some issues associated with roadmap worthiness (invited) (2011) (9)
- Crystallization Pathway for Metastable Hexagonal Close-Packed Gold in Germanium Nanowire Catalysts (2015) (8)
- Metal‐Organic Decomposition and Microstructure Development in Ba 2 ycu 3 o 7‐X Films from Metal Trifluoroacetate Precursors (1989) (8)
- Enhancement mode In0.53Ga0.47As MOSFET with self-aligned epitaxial source/drain regrowth (2009) (8)
- High temperature electrical conduction in nanoscale hafnia films under varying oxygen partial pressure (2010) (8)
- Dielectric relaxation and steady-state leakage in low-temperature sputtered (Ba, Sr)TiO3 thin films (2001) (8)
- Al2O3/Si0.7Ge0.3(001) & HfO2/Si0.7Ge0.3(001) interface trap state reduction via in-situ N2/H2 RF downstream plasma passivation (2019) (8)
- (Invited) Border Trap Density in Al2O3/InGaAs MOS: Dependence on Hydrogen Passivation and Bias Temperature Stress (2015) (7)
- Oxygen permeability of ferroelectric thin film top electrodes and its effect on detectable fatigue cycling-induced oxygen isotope motion (2004) (7)
- Interfacial Cation-Defect Charge Dipoles in Stacked TiO2/Al2O3 Gate Dielectrics. (2018) (7)
- Surface Defect Passivation of Silicon Micropillars (2018) (7)
- A Unified Two-Band Model for Oxide Traps and Interface States in MOS Capacitors (2015) (7)
- Subcutaneous oxidation of In0.53Ga0.47As(100) through ultra-thin atomic layer deposited Al2O3 (2013) (7)
- The Effect of SPA-SiO2 Tunnel Oxide Thickness for Metal-Insulator-Silicon Photoelectrochemical Cells (2014) (7)
- Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors (2012) (6)
- Physical and electrical properties of plasma nitrided germanium oxynitride (2006) (6)
- Atomically abrupt and unpinned Al 2 O 3 / In 0 . 53 Ga 0 . 47 As interfaces : Experiment and simulation (2009) (6)
- Electrochemical impedance spectroscopy for quantitative interface state characterization of planar and nanostructured semiconductor-dielectric interfaces (2017) (6)
- Characterization of the photocurrents generated by the laser of atomic force microscopes. (2016) (6)
- Selective Oxidation of SiGe Alloys: A Route to Ge-on-Insulator Structures with Controlled Biaxial Strain (2008) (5)
- Interfacing Low‐Temperature Atomic Layer Deposited TiO2 Electron Transport Layers with Metal Electrodes (2020) (5)
- Effects of Long-Time DC Bias on D2O- and D2/N2-Annealed BST Thin Films (2002) (5)
- Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics (2017) (5)
- Mechanism of dangling bond elimination on As-rich InGaAs surface (2012) (5)
- Low temperature, high pressure thermo-physical and crystallographic properties of KZnF3 perovskite (2017) (5)
- Nuclear and magnetic structures of KMnF3 perovskite in the temperature interval 10 K–105 K (2020) (5)
- Reversible Decay of Oxygen Evolution Activity of Iridium Catalysts (2019) (5)
- In situ low-angle x-ray scattering study of phase separation in initially mixed HfO2–SiO2 thin film interfaces (2004) (5)
- Relaxorlike dielectric behavior in Ba0.7Sr0.3TiO3 thin films (2007) (4)
- Ge Interface Passivation Techniques and Their Thermal Stability (2008) (4)
- Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks (2018) (4)
- Morphological Stability of Mesoporous Pt Thin Films Deposited via Nanosphere Lithography on YSZ (2011) (4)
- Gold removal from germanium nanowires. (2009) (4)
- Plasmons and inter-band transitions of hexagonal close packed gold nanoparticles (2019) (4)
- Investigation of stress induced interface states in Al2O3/InGaAs metal-oxide-semiconductor capacitors (2017) (4)
- Initial growth analysis of ALD Al2O3 film on hydrogen-terminated Si substrate via in situ XPS (2020) (4)
- The Influence of Processing Parameters on the Development of Biaxially Aligned Zirconia Thin Films Deposited by Ion Beam Assisted Deposition (1994) (4)
- Technology development & design for 22 nm InGaAs/InP-channel MOSFETs (2008) (4)
- Electron beam irradiation of gallium nitride-on-silicon betavoltaics fabricated with a triple mesa etch (2021) (4)
- Resistive Switching: Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride (Adv. Funct. Mater. 10/2017) (2017) (4)
- (Invited) In Situ XPS in Atomic Layer Deposition of Oxides on Ge (100) (2010) (3)
- Control of InGaAs facets using metal modulation epitaxy (MME) (2014) (3)
- Defect formation in epitaxial oxide dielectric layers due to substrate surface relief (1995) (3)
- Controlling Area-Selective Atomic Layer Deposition of HfO 2 Dielectric by Self-assembled Monolayers (2004) (3)
- HfO 2 gate dielectric on ( NH 4 ) 2 S passivated ( 100 ) GaAs grown by atomic layer deposition (2007) (3)
- Nanowires for Energy Applications: Fundamental Growth Studies (2009) (3)
- Oxygen Transfer from Metal Gate to High-k Gate Dielectric Stack: Interface Structure & Property Changes (2007) (3)
- CeO2 Doping of Hf0.5Zr0.5O2 Thin Films for High Endurance Ferroelectric Memories (2022) (3)
- Silicon Photoanodes for Solar-Driven Oxidation of Brine: A Nanoscale, Photo-Active Analog of the Dimensionally-Stable Anode (2018) (3)
- Link between Gas Phase Reaction Chemistry and the Electronic Conductivity of Atomic Layer Deposited Titanium Oxide Thin Films. (2021) (3)
- Germanium Channel P-Mosfet with TiO2/Al2O3 Bilayer High-K Gate Stacks and Solutions for Metal/TiO2 Interface Stability (2012) (3)
- Understanding the Mechanism of Electronic Defects Suppression Enabled by Non-Idealities in Atomic Layer Deposition. (2019) (3)
- A novel self-aligned gate-lost MOSFET process comparing high-/spl kappa/ candidates (2003) (2)
- Enhanced performance and endurance of nano-porous platinum solid oxide fuel cell electrodes by oxygen partial pressure cycling (2013) (2)
- Direct Observation of Polarization vs. Thickness Relation in Ultra-Thin Ferroelectric Films (2007) (2)
- 3D-stacked Strained SiGe/Ge Gate-All-Around (GAA) Structure Fabricated by 3D Ge Condensation (2019) (2)
- Epitaxial Planarization Using Ion Beam Assisted Deposition (1993) (2)
- In Situ TEM Studies of Metastable Hexagonal Close-packed Au Nanocatalysts at the Tips of Ge Nanowires (2013) (2)
- Correction to tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition. (2015) (2)
- Y-Doping Effects on the Dielectric Behavior of RF-Sputtered BST Thin Films (2004) (2)
- Bias temperature stress induced hydrogen depassivation from Al2O3/InGaAs interface defects (2018) (2)
- Bending and precipitate formation mechanisms in epitaxial Ge-core/GeSn-shell nanowires. (2021) (2)
- High-Peformance BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with Large Memory Window of 2.2 V, Long Retention > 10 years and High Endurance > 108 Cycles (2021) (2)
- Crystallization Kinetics of Fe-DOPED A1 2 0 3 (1994) (1)
- Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia-Zirconia Alloys. (2022) (1)
- Faceting and disorder in nanowire solar cell arrays (2010) (1)
- Atomic Layer Deposition of High-κ Dielectrics on III–V Materials (2001) (1)
- Angular dependence of transport current near critical at fields to 4 T in metalorganic thin films (1994) (1)
- In-situ reflectometry to monitor locally-catalyzed initiation and growth of nanowire assemblies (2020) (1)
- 0.37 mS/μm In0.53Ga0.47As MOSFET with 5 nm channel and self-aligned epitaxial raised source/drain (2009) (1)
- Series resistance and gate leakage correction for improved border trap analysis of Al2O3/InGaAs gate stacks (2017) (1)
- STRUCTURAL EVOLUTION AND POINT DEFECTS IN METAL OXIDE-BASED HIGH-κ GATE DIELECTRICS (2006) (1)
- Effects of Nitrogen Reactive Species on Germanium Plasma Nitridation Processes (2006) (1)
- (Invited) Undoped Ge Core-Si(Ge) Shell Nanowires: Synthesis, Local Composition and Strain Characterization (2013) (1)
- The Field-dependence Endurance Model and Its Mutual Effect in Hf-based Ferroelectrics (2022) (1)
- Effect of IrO2 Spatial Distribution on the Stability and Charge Distribution of Ti1–xIrxO2 Alloys (2019) (1)
- Resistance degradation of CVD (Ba,Sr)TiO/sub 3/ thin films for DRAMs and integrated decoupling capacitors (1996) (1)
- Trimethylaluminum Passivation of Al2O3/InGaAs Interface for Metal-Oxide-Semiconductor Devices (2012) (1)
- Surface Passivation of Germanium Nanowires (2005) (1)
- Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors [J. Electrochem. Soc., 158, G103 (2011)] (2012) (1)
- Orientation Selection and Microstructural Evolution of Epitaxial Pt Films on (001) MgO (1994) (1)
- Pre-ALD Trimethylaluminum Passivation of Al 2 O 3 /InGaAs(100) Interfaces (2013) (1)
- Novel germanium technology and devices for high performance mosfets and integrated on-chip optical clocking (2003) (1)
- Photo-induced poly-domain to mono-domain switching in ultrathin PbTiO$_{3}$ films (2010) (0)
- Mid-Infrared Emission and Absorption from GeSn/Ge Core-Shell Nanowires with Nanophotonic Light Extraction (2020) (0)
- ISSUES FOR INTEGRATION OF HIGH DENSITY FRAM WITH QUARTER MICRON DESIGN RULE (2000) (0)
- Area Selective Atomic Layer Deposition by Soft Lithography (2006) (0)
- (Paper CH011) effect of strain, microstructure, and interfaces on tunability and relaxor-like dielectric behavior in barium strontium titanate thin-films (2008) (0)
- (Invited) Materials for Solar Fuels: Coupling Efficient Water Splitting Catalysts and High-Performance Photovoltaics by Atomic Layer Deposition (2020) (0)
- Germanium Interface Structure and Defect Passivation in High-k MOS Devices (2010) (0)
- Ferroelectric Thin Films IX. Volume 655. Symposium Held in Boston, MA on November 26-30, 2000 (2001) (0)
- Experimental Study of Defect Behaviors in Germanium (2012) (0)
- (Invited) Charge Traps, Temperature- and Bias-Stress Stability of Alumina Dielectric / Indium Gallium Arsenide Gate Stacks (2017) (0)
- Stability of Metal Oxide/Ge and Metal Oxide/III-V Interfaces and Implications for Low Defect Density MOS Devices (2008) (0)
- 4 Bits/cell Hybrid 1F1R for High Density Embedded Non-Volatile Memory and its Application for Compute in Memory (2022) (0)
- Orientation selection and microstructural evolution of epitaxial platinum films on (001) magnesium oxide (1995) (0)
- Passive Layer Formation at Ferroelectric PbTiO3/Pt Interfaces Studied by EELS (2005) (0)
- Y DOPANT ENGINEERED RF-SPUTTERED (Bax,Sr1-x)TiO3 THIN FILMS FOR GHz DECOUPLING APPLICATIONS (2005) (0)
- Ge Nanowires: Sn Catalysts and Ge/Ge1-xSnx Core-Shell Structures (2017) (0)
- Novel Ge Devices with High- κ Dielectrics: High Performance MOSFETs and Optical Receivers (2003) (0)
- Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics (2017) (0)
- MP1 - GeSn Mid-infrared Nanophotonic Resonant Absorbers (2019) (0)
- Analysis of the Sub-Eutectic Growth of Ge Nanowires using In Situ TEM (2007) (0)
- Growth of germanium crystals from electrodeposited gold in local crucibles (2009) (0)
- Biaxial stress-induced domain wall motion at room temperature in polycrystalline lead zirconium titanate thin films (2007) (0)
- Innovating at Speed and at Scale: A Next Generation Infrastructure for Accelerating Semiconductor Technologies (2022) (0)
- Charge Traps at and near High-K Oxide/III-V Interfaces (2012) (0)
- Influences of Plasma Processed Interface Layers on Germanium MOS Devices with ALD Grown HfO2 (2007) (0)
- Understanding Photovoltage in Insulator-Protected Water-Splitting Half-Cells (2015) (0)
- Group IV semiconductor nanowire arrays: different flavors of epitaxy (2009) (0)
- Dipolar orientational glass-like behavior in Ba0.7Sr0.3TiO3 thin-films (2006) (0)
- Analysis of Structure and Orientation of Vertical Germanium Single Crystal Nanowires on Silicon Substrates (2005) (0)
- 3D-stacked Highly Strained SiGe/Ge Gate-All-Around (GAA) pFETs Fabricated by 3D Ge Condensation (2019) (0)
- Heteroepitaxial growth of chemically derived Ba₂YCu₃O₇âx thin films (1993) (0)
- Oxide Decomposition and Sn Surface Segregation on Core/Shell Ge/GeSn Nanowires (2022) (0)
- Phase-field investigation of the stages in radial growth of core-shell Ge/Ge1-xSnx nanowires. (2019) (0)
- Effect of stress evolution on lead zirconium titanate thin-film phase transformations (2006) (0)
- Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS) (2023) (0)
- Stress and strain effects in PZT ceramic films (2010) (0)
- Low Resistance III-V Heterocontacts to N-Ge (2018) (0)
- Interface engineering for high performance and stable MIS photosynthesis cells (2017) (0)
- Ge Based High Performance Nanoscale MOSFETs and Integrated Optical Interconnects (2004) (0)
- Atomic Layer Deposited Transition Metal Oxide-Titania Alloys As Corrosion Resistant Schottky Contacts for Silicon Photoanodes (2017) (0)
- Strained Ge Core/Si(Ge) Shell Nanowires: Stability and Surface Defect Passivation (2012) (0)
- NH4)2Sでパッシベートした(100)GaAs上に原子層堆積で成長させたHfO2ゲート絶縁体 (2008) (0)
- Ultrathin TiO2 on Si: Anode and Catalyst Durability (2010) (0)
- Metal Oxide Nanotubes and Photo-Excitation Effects : New Approaches for Low-to-Intermediate Temperature Solid Oxide Fuel Cells (2007) (0)
- Abstract Submitted for the MAR07 Meeting of The American Physical Society Biaxial Stress-Induced Domain Wall Motion at Room Temper- ature in Polycrystalline Lead Zirconium Titanate Thin Films (2012) (0)
- Field‐Induced Ferroelectric Phase Evolution During Polarization “Wake‐Up” in Hf 0.5 Zr 0.5 O 2 Thin Film Capacitors (2023) (0)
- Using Liquid Electrolytes in Dielectric Reliability Studies (2018) (0)
- Crystallization kinetics of Fe-doped Al{sub 2}O{sub 3} (1995) (0)
- High-k dielectric processing for germanium channel MOSFETs (2003) (0)
- Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf0.5Zr0.5O2/Metal Capacitors (2022) (0)
- Passive Layer Formation at Pt/PbTiO3 Interfaces Identified Using STEM and EFTEM (2005) (0)
- G Materials , Integration , and Packaging Issues for High-Frequency Devices II November 29-December 1 , 2004 Chairs (2004) (0)
- Schottky Tunnel Contacts for Efficient Coupling of Photovoltaics and Catalysts Investigators (2013) (0)
- Dipolar orientational glass phase transition behavior inBa0.7Sr0.3TiO3 films (2006) (0)
- Interdiffusion in Coherent Si0.90Ge0.10/Si0.95Ge0.05 Superlattices (2003) (0)
- (Invited) Interface and Border Traps, Their Passivation and the Reliability of Alumina Dielectric / Indium Gallium Arsenide Gate Stacks (2018) (0)
- Room temperature grown zirconia/SiO/sub 2/ dielectric stacks with 1 nm EOT (2002) (0)
- Relaxor-like dielectric behavior and universal relaxation law in Ba0.7Sr0.3TiO3 thin-films (2007) (0)
- Nanowire Solar Cells for Inexpensive and Highly Efficient Photoelectricity : Enabling Methods (2009) (0)
- Application of modified phonon confinement model in Raman characterization of Ge nanowires (2011) (0)
- (Invited) Liquid Electrolyte Contacts to Semiconductor Nanostructures: Probing and Programming Local Defect Behavior (2018) (0)
- Metal-Oxide-Semiconductor Nanocomposites for Photoelectrochemical Water Splitting (2012) (0)
- Nucleation and growth of germanium islands during layer exchange metal-induced crystallization (2010) (0)
- Control of InGaAs facets using metal modulation epitaxy (MME) (2014) (0)
- Modeling Earle-Stage Kinking during VLS Ge Nanowire Growth (2012) (0)
- Publisher's Note: Morphological Stability of Mesoporous Pt Thin Films Deposited via Nanosphere Lithography on YSZ [Electrochem. Solid-State Lett., 14, B96 (2011)] (2011) (0)
- CeO2-Doped Hf0.5Zr0.5O2 Ferroelectrics for High Endurance Embedded Memory Applications (2022) (0)
- Effect of stress on dielectric loss behavior in Ba0.7Sr0.3TiO3 thin-films (2007) (0)
- Epitaxial Dielectric Planarization for Multilayer HTSC Structures (1994) (0)
- Engineering Interfacial Silicon Dioxide for Improved MIS Silicon Photoanode Water Splitting Performance (2018) (0)
- Imaging Light-Induced Phase Separation Dynamics of Inorganic Halide Perovskites (2020) (0)
- Ge and SiGe for High Performance MOSFETs and Integrated Optical Interconnects (2004) (0)
- Heteroepitaxial Growth of Chemically Derived BARIUM(2) Yttrium COPPER(3) OXIDE(7-X) Thin Films (1993) (0)
- Potential distribution and domain structure of metal-ferroelectric-semiconductor-metal heterostructures (2006) (0)
- Interpretation of ion channeling results from epitaxial Pt thin films and multilayers (1998) (0)
- Erratum: “Effect of Y doping and composition-dependent elastic strain on the electrical properties of (Ba,Sr)TiO3 thin films deposited at 520°C” [Appl. Phys. Lett. 87, 192906 (2005)] (2007) (0)
- Strain and Sn distribution in Ge/Ge1−xSnx Core-Shell Nanowires (2019) (0)
- Atomic Layer Deposited TiO2 on Si: A Corrosion Resistant (Photo)anode for Water Oxidation (2010) (0)
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