Paul R. Berger
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American electrical engineer
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Engineering
Paul R. Berger's Degrees
- PhD Electrical Engineering University of California, Berkeley
- Masters Electrical Engineering University of California, Berkeley
- Bachelors Electrical Engineering University of California, Berkeley
Why Is Paul R. Berger Influential?
(Suggest an Edit or Addition)According to Wikipedia, Paul R. Berger is a professor in electrical and computer engineering at Ohio State University and physics , and a distinguished visiting professor at Tampere University in Finland, recognized for his work on self-assembled quantum dots under strained-layer epitaxy, quantum tunneling based semiconductor devices and solution processable flexible electronics.
Paul R. Berger's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime (1988) (223)
- Plasmon-enhanced optical absorption and photocurrent in organic bulk heterojunction photovoltaic devices using self-assembled layer of silver nanoparticles (2010) (214)
- Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes (1998) (114)
- Polymer solar cells: P3HT:PCBM and beyond (2018) (90)
- Nanometer-period gratings in hydrogen silsesquioxane fabricated by electron beam lithography (2003) (83)
- Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts (2001) (57)
- Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing (2000) (55)
- Photoresponsivity of polymer thin-film transistors based on polyphenyleneethynylene derivative with improved hole injection (2004) (54)
- Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR (2004) (53)
- Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation (2004) (52)
- 4.8% efficient poly(3-hexylthiophene)-fullerene derivative (1:0.8) bulk heterojunction photovoltaic devices with plasma treated AgOx/indium tin oxide anode modification (2008) (52)
- Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions (2003) (51)
- Room-temperature negative differential resistance in polymer tunnel diodes using a thin oxide layer and demonstration of threshold logic (2005) (47)
- Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping (1986) (46)
- Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy (2016) (43)
- Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures (2017) (41)
- Monolithically Peltier‐cooled vertical‐cavity surface‐emitting lasers (1991) (40)
- 151 kA/cm2 peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications (2003) (40)
- Optical and electronic properties of SiGeC alloys grown on Si substrates (1995) (38)
- In0.53Ga0.47As metal‐semiconductor‐metal photodiodes with transparent cadmium tin oxide Schottky contacts (1994) (37)
- Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities (1999) (36)
- Monolithically integrated InP-based front-end photoreceivers (1991) (35)
- Comparative study of the growth processes of GaAs, AlGaAs, InGaAs, and InAlAs lattice matched and nonlattice matched semiconductors using high‐energy electron diffraction (1987) (34)
- 431 kA/cm 2 peak tunneling current density in GaN/AlN resonant tunneling diodes (2018) (34)
- The Effect of Spacer Thicknesses on Si-Based Resonant Interband Tunneling Diode Performance and Their Application to Low-Power Tunneling Diode SRAM Circuits (2006) (33)
- Transparent and opaque Schottky contacts on undoped In0.52Al0.48As grown by molecular beam epitaxy (1995) (33)
- High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition (2012) (32)
- Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy (1999) (31)
- A study of strain‐related effects in the molecular‐beam epitaxy growth of InxGa1−xAs on GaAs using reflection high‐energy electron diffraction (1987) (31)
- A waveguide directional coupler with a nonlinear coupling medium (1991) (31)
- Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration (2004) (30)
- Full band modeling of the excess current in a delta-doped silicon tunnel diode (2003) (30)
- Atomic layer deposited HfO2 gate dielectrics for low-voltage operating, high-performance poly-(3-hexythiophene) organic thin-film transistors (2010) (30)
- Si/SiGe resonant interband tunnel diode with f/sub r0/ 20.2 GHz and peak current density 218 kA/cm/sup 2/ for K-band mixed-signal applications (2006) (30)
- Plasma‐Polymerized Multistacked Organic Bipolar Films: A New Approach to Flexible High‐κ Dielectrics (2008) (29)
- Demonstration of all‐optical modulation in a vertical guided‐wave nonlinear coupler (1988) (27)
- Liquid phase epitaxial growth of InGaAs on InP using rare‐earth‐treated melts (1996) (26)
- Selective deuteron production using target normal sheath acceleration (2012) (26)
- High electric-field effects on short-channel polythiophene polymer field-effect transistors (2004) (26)
- MSM photodiodes (1996) (26)
- Investigation of the interface region produced by molecular beam epitaxial regrowth (1989) (25)
- Optical properties of Ge1-yCy alloys (1996) (24)
- The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−x As/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes (1990) (24)
- In/sub 0.53/Ga/sub 0.47/As MSM photodiodes with transparent CTO Schottky contacts and digital superlattice grading (1997) (23)
- 1.3 μm photoresponsivity in Si-based Ge1−xCx photodiodes (1998) (22)
- Substrate orientation effects on dopant incorporation in InP grown by metalorganic chemical vapor deposition (1993) (22)
- Metal-semiconductor-metal photodetectors (2001) (22)
- Si/SiGe Resonant Interband Tunneling Diodes Incorporating $\delta$-Doping Layers Grown by Chemical Vapor Deposition (2009) (22)
- Negative Differential Resistance Devices and Circuits (2011) (21)
- Performance characteristics of GaInAs/GaAs large optical cavity quantum well lasers (1991) (20)
- Characterization and Electrical Properties of Individual Au–NiO–Au Heterojunction Nanowires (2007) (18)
- Fabrication of nanowires with high aspect ratios utilized by dry etching with SF6: C4F8 and self-limiting thermal oxidation on Si substrate (2010) (18)
- Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy (2004) (17)
- 90 nm 32 $\times$ 32 bit Tunneling SRAM Memory Array With 0.5 ns Write Access Time, 1 ns Read Access Time and 0.5 V Operation (2011) (17)
- RF performance and modeling of Si/SiGe resonant interband tunneling diodes (2005) (17)
- Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes (2020) (17)
- High sensitivity Si-based backward diodes for zero-biased square-law detection and the effect of post-growth annealing on performance (2005) (16)
- Viability Bounds of M2M Communication Using Energy-Harvesting and Passive Wake-Up Radio (2017) (16)
- NMOS/SiGe Resonant Interband Tunneling Diode Static Random Access Memory (2006) (16)
- Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy (2003) (16)
- Realization of in-situ sub two-dimensional quantum structures by strained layer growth phenomena in the InxGa1- xAs/GaAs system (1996) (15)
- Band‐edge photoluminescence from pseudomorphic Si0.96Sn0.04 alloy (1996) (15)
- Plasma-polymerized multistacked bipolar gate dielectric for organic thin-film transistors (2010) (15)
- Capacitance-voltage characterization of pulsed plasma polymerized allylamine dielectrics for flexible polymeric field effect transistors (2004) (15)
- In0.53Ga0.47As p‐i‐n photodiodes with transparent cadmium tin oxide contacts (1992) (14)
- Integration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications (2006) (14)
- In Ga As MSM Photodiodes with Transparent CTO Schottky Contacts and Digital Superlattice Grading (1997) (13)
- Anodic Oxidation of Ultra-Thin Ti Layers on ITO Substrates and their Application in Organic Electronic Memory Elements (2014) (13)
- 930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template (2019) (13)
- ''p-on-n'' Si interband tunnel diode grown by molecular beam epitaxy (2001) (13)
- Feasibility and Fundamental Limits of Energy-Harvesting Based M2M Communications (2016) (13)
- Orientation‐dependent phase modulation in InGaAs/GaAs multiquantum well waveguides (1988) (13)
- Sensitivity of Si-based zero-bias backward diodes for microwave detection (2007) (12)
- Printed and organic diodes: devices, circuits and applications (2017) (12)
- Boron Delta-Doping Dependence on Si/SiGe Resonant Interband Tunneling Diodes Grown by Chemical Vapor Deposition (2012) (12)
- InGaAs/GaAs multiquantum-well electroabsorption modulator with integrated waveguide. (1987) (12)
- Investigation of molecular beam epitaxial In0.53Ga0.47As regrown on liquid phase epitaxial In0.53Ga0.47As/InP (1986) (12)
- Si-based interband tunneling devices for high-speed logic and low power memory applications (1998) (11)
- Growth and properties of In0.52Al0.48As/In0.53Ga0.47As, GaAS: In and InGaAs/GaAs multilayers (1987) (11)
- pnp Si resonant interband tunnel diode with symmetrical NDR (2001) (11)
- Monolithically integrated Si/SiGe resonant interband tunneling diodes/CMOS MOBILE latch with high voltage swing (2003) (11)
- 10 GHz bandwidth monolithic p‐i‐n modulation‐doped field effect transistor photoreceiver (1993) (11)
- Analysis of the Voltage Swing for Logic and Memory Applications in Si/SiGe Resonant Interband Tunnel Diodes Grown by Molecular Beam Epitaxy (2007) (11)
- GaAs quantum well laser and heterojunction bipolar transistor integration using molecular beam epitaxial regrowth (1991) (11)
- P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance (2009) (11)
- STRAIN MODIFICATION IN THIN SI1-X-YGEXCY ALLOYS ON (100) SI FOR FORMATION OF HIGH DENSITY AND UNIFORMLY SIZED QUANTUM DOTS (1999) (11)
- Current transport characteristics of SiGeC/Si heterojunction diode (1996) (10)
- Radiation tolerance of Si/Si0.6Ge0.4 resonant interband tunneling diodes (2004) (10)
- Interfacial design and structure of protein/polymer films on oxidized AlGaN surfaces (2011) (10)
- Wireless Energy Harvesting and Communications: Limits and Reliability (2017) (10)
- Substantial improvement by substrate misorientation in dc performance of Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As double‐heterojunction NpN bipolar transistors grown by molecular beam epitaxy (1991) (9)
- 1.0 GHz monolithic p-i-n MODFET photoreceiver using molecular beam epitaxial regrowth (1992) (9)
- Tuning the Plasmonic Extinction Resonances of Hexagonal Arrays of Ag Nanoparticles (2015) (9)
- AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN (2017) (8)
- A Nonlinear Circuit Simulation of Switching Process in Resonant-Tunneling Diodes (2016) (8)
- Anomalous effects of lamp annealing in modulation-doped In0.53Ga0.47As/In0.52Al0.48As and Si-implanted In0.53Ga0.47As (1987) (8)
- Negative differential resistance in polymer tunnel diodes using atomic layer deposited, TiO 2 tunneling barriers at various deposition temperatures (2017) (8)
- Rational enhancement of nanobiotechnological device functions illustrated by partial optimization of a protein-sensing field effect transistor (2009) (8)
- Towards in vivo biosensors for low-cost protein sensing (2013) (8)
- Flexible, solution-processed, indium oxide (In2O3) thin film transistors (TFT) and circuits for internet-of-things (IoT) (2022) (7)
- Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time (2015) (7)
- Improved vertically stacked Si/SiGe resonant interband tunnel diode pair with small peak voltage shift and unequal peak currents (2004) (7)
- Low sidewall damage plasma etching using ICP-RIE with HBr chemistry of Si∕SiGe resonant interband tunnel diodes (2006) (7)
- Overgrown Si/SiGe resonant interband tunnel diodes for integration with CMOS (2004) (7)
- Recombination velocity at molecular-beam-epitaxial GaAs regrown interfaces (1989) (7)
- Molecular beam epitaxial growth and luminescence of InxGa1−xAs/InxAl1−xAs multiquantum wells on GaAs (1987) (7)
- Strain-Engineered Si/SiGe Resonant Interband Tunneling Diodes Grown on $\hbox{Si}_{0.8}\hbox{Ge}_{0.2}$ Virtual Substrates With Strained Si Cladding Layers (2008) (7)
- Pulsed plasma polymerized dichlorotetramethyldisiloxane high-k gate dielectrics for polymer field-effect transistors (2006) (6)
- Monolithic integration of GaAs and In0.2Ga0.8As lasers by molecular beam epitaxy on GaAs (1991) (6)
- An AlGaAs double‐heterojunction bipolar transistor grown by molecular‐beam epitaxy (1991) (6)
- Methods for attaining high interband tunneling current in III-Nitrides (2012) (6)
- Strain engineered Si∕SiGe resonant interband tunneling diodes with outside barriers grown on Si0.8Ge0.2 virtual substrates (2008) (5)
- M2M Communication Assessment in Energy-Harvesting and Wake-Up Radio Assisted Scenarios Using Practical Components (2018) (5)
- Selective atomic layer deposition on flexible polymeric substrates employing a polyimide adhesive as a physical mask (2021) (5)
- Enhanced Emission Using Thin Li-Halide Cathodic Interlayers for Improved Injection into Poly(p-phenylene vinylene) Derivative PLEDs (2008) (5)
- SiGe diffusion barriers for P-doped Si/SiGe resonant interband tunnel diodes (2002) (5)
- Investigation of Switching Time in GaN/AlN Resonant Tunneling Diodes by Experiments and P-SPICE Models (2020) (5)
- Challenges in integration of Resonant Interband Tunnel Devices with CMOS (2003) (5)
- 8-element linear array monolithic p-i-n MODFET photoreceivers using molecular beam epitaxial regrowth (1993) (5)
- A p-Ge/sub 1-x/C/sub x//n-Si heterojunction diode grown by molecular beam epitaxy (1997) (5)
- Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2 (2020) (4)
- Temperature dependent DC/RF performance of Si/SiGe resonant interband tunnelling diodes (2005) (4)
- Observation of strain in pseudomorphic Si1−xGex by tracking phonon participation in Si∕SiGe resonant interband tunnel diodes via electron tunneling spectroscopy (2009) (4)
- 0.6V Threshold Voltage Thin Film Transistors With Solution Processable Indium Oxide (In2O3) Channel and Anodized High- $\kappa$ Al2O3 Dielectric (2019) (4)
- Broadband Finite‐Difference Time‐Domain Modeling of Plasmonic Organic Photovoltaics (2014) (4)
- High Temperature Characterization of Si/SiGe Resonant Interband Tunnel Diodes (2005) (4)
- Low resistance ohmic contacts to p-Ge/sub 1-x/Cx on Si (1997) (4)
- Antireflection coatings based on fluoride formulations for organic solar cells (2016) (4)
- Integration of silicon-based tunnel diodes with CMOS: an RIT-OSU-NRL-NSF effort (2001) (4)
- 0.7-GHz Solution-Processed Indium Oxide Rectifying Diodes (2020) (4)
- Growth phenomena and characteristics of strained InxGa1-xAs on GaAs (1989) (3)
- Analysis of the Biasing Conditions and Latching Operation for Si/SiGe Resonant Interband Tunnel Diode Based Tunneling SRAM (2005) (3)
- Buried heterostucture lasers using a single-step metal-organic chemical vapor deposition growth over patterned substrates (1992) (3)
- 3-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley (2004) (3)
- Monolithic GaAs/AlGaAs optical transmitter circuit using a single growth step (1994) (2)
- Long Wavelength Metal-semiconductor-metal Photodiodes With Transparent Cadmium Tin Oxide Schottky Contacts (1994) (2)
- Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire (2020) (2)
- Efficient poly(3-hexylthiophene)-fullerene derivative bulk heterojunction photovoltaic devices using unique self-assembled layer of Ag nanoparticles with controllable particle-to-particle spacing (2009) (2)
- Inverted, substrate-removed MSM and Schottky diode optical detectors (1996) (2)
- Atomic layer deposited HfO 2 gate dielectrics for low-voltage operating , high-performance poly-( 3-hexythiophene ) organic thin-film transistors (2010) (2)
- Monolithic GaAs/AlGaAs pin MESFET photoreceiver using a single molecular beam epitaxy growth step (1993) (2)
- Equivalent circuit modeling of metal-semiconductor-metal photodiodes with transparent conductor electrodes (1997) (2)
- In 0 , 53 Ga 0 . 47 As pi-n photodiodes with transparent cadmium tin oxide contacts (1999) (2)
- Noise Measurements of High-Speed, Light-Emitting GaN Resonant-Tunneling Diodes (2018) (1)
- Near band edge photoluminescence from pseudomorphic tensially strained Si0.985C0.015 alloy (1997) (1)
- Development of /spl delta/B/i-Si//spl delta/Sb and /spl delta/B/i-Si//spl delta/Sb/i-Si//spl delta/B resonant interband tunnel diodes for integrated circuit applications (2000) (1)
- Photoluminescence Of Sisnc Alloys Grown On (100) Si Substrates (1998) (1)
- Flexible Thin Film Transistor (TFT) and Circuits for Internet of Things (IoT) based on Solution Processed Indium Gallium Zinc Oxide (IGZO) (2021) (1)
- High-k polymerized dichlorotetramethyldisiloxane films deposited by radio frequency pulsed plasma for gate dielectrics in polymer field effect transistors (2005) (1)
- Si-based Resonant Interband Tunnel Diode with Cutoff Frequency over 20 GHz and Estimated Peak Current Density of 218 kA/cm/sup 2'/ (2005) (1)
- 2-volt Solution-Processed, Indium Oxide (In2 O3) Thin Film Transistors on flexible Kapton (2019) (1)
- Surface modification to the indium tin oxide (ITO) anodes through plasma oxidized silver for efficient P3HT:PCBM (1:0.8) bulk heterojunction photovoltaic devices (2008) (1)
- RTD Light Emission around 1550 nm with IQE up to 6% at 300 K (2020) (1)
- In 0.2 Ga 0.8 As/GaAs strained quantum-well lasers (1991) (1)
- Flexible, Gallium Oxide (Ga2O3) Thin Film Transistors (TFTs) and Circuits for the Internet of Things (IoT) (2021) (1)
- Simplified Si resonant interband tunnel diodes (2007) (1)
- Phosphorus diffusion in Si-based resonant interband tunneling diodes and tri-state logic using vertically stacked diodes (2005) (1)
- Low Resistance Ohmic Contacts to p-Ge C on Si (1997) (1)
- Delta-Doped Si/SiGe Zero-Bias Backward Diodes for Micro-Wave Detection (2007) (1)
- Electroluminescence in Unipolar-Doped In0.53Ga0.47As/AlAs Resonant-Tunneling Diodes: A Competition between Interband Tunneling and Impact Ionization (2021) (1)
- Advancements in Solution Processable Devices using Metal Oxides For Printed Internet-of-Things Objects (2019) (1)
- Liquid phase epitaxial InGaAs on InP with rare-earth elements (1995) (0)
- Epitaxial Si-based tunnel diodes (2016) (0)
- Monolithic Si/SiGe HBT-RITD Circuit with Controllable Negative Differential Resistance for Voltage Controlled Oscillator Applications (2005) (0)
- NIRT: Self-Aligned and Self-Limited Quantum Dot Nanoswitches (2002) (0)
- Eight-element-linear-array monolithic P-I-N-MODFET photoreceivers using molecular-beam epitaxial regrowth (1993) (0)
- Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes (2019) (0)
- Zero-bias Si backward diodes detectors incorporating P and B δ-doping layers grown by chemical vapor deposition (2009) (0)
- Evaluation of Alternative Materials for Polymer Tunneling Diodes (2015) (0)
- In-Situ RHEED Studies To Understand The Dislocation Formation Process In Growth Of InGaAs on GaAs (1988) (0)
- Efficient organic bulk heterojunction solar cells through near infrared absorbing metallated thiophene complexes (2009) (0)
- Strong Band-Edge Light Emission from InGaAs RTDs: Evidence for the Universal Nature of Resonant- and Zener- Co-Tunneling (2018) (0)
- Capacitance-Voltage Characterization of Pulsed Plasma Polymerized Allylamine Dielectrics (2002) (0)
- Fabrication of GaAs spin injection devices (2006) (0)
- Temperature dependent empirical modeling of proximity diffused Si esaki diodes and memory circuits (2007) (0)
- 200mm Si/SiGe Resonant Interband Tunneling Diodes Incorporating δ-Doping Layers Grown by CVD (2009) (0)
- Integrated photoreceiver array using molecular beam epitaxial regrowth (1992) (0)
- Liquid-phase epitaxial growth process of InGaAs on InP with rare-earth treatment (1996) (0)
- 10-GHz bandwidth monolithic pin-MODFET photoreceiver (1993) (0)
- Effects of Substrate Tilting in Substantial Improvement of Dc Performance of Aigaas/gaas Npn Dhbt's Grown by Mbe (1991) (0)
- Evaluation of ALD-Grown Metal Oxide Tunnel Junction Layer for Organic Tandem Cells (2014) (0)
- Feasibility and Fundamental Limits of Energy-Harvesting Based M2M Communications (2017) (0)
- Sb / iSi / ± B Resonant Interband Tunnel Diodes For Integrated Circuit Applications (2000) (0)
- Erratum: ‘‘Substrate orientation effects on dopant incorporation in InP grown by metalorganic chemical vapor deposition’’ [J. Appl. Phys. 73, 4095 (1993)] (1994) (0)
- Flexible Polymer Rectifying Diode on Plastic Foils with MoO3 Hole Injection (2022) (0)
- Integrated-optical receivers and transmitters for use in wide-bandwidth optical transmission systems (1994) (0)
- Light sensitive polymer thin film transistors based on BAS-PPE (2004) (0)
- Monolithic PIN-FET photoreceivers (1993) (0)
- Growth Temperature Effects on Deep-Levels in Si Grown by Low Temperature Molecular Beam Epitaxy (2002) (0)
- A p-Ge C /n-Si Heterojunction Diode Grown by Molecular Beam Epitaxy (1997) (0)
- Low Temperature Processing of Electronic Materials for Cutting Edge Devices (2019) (0)
- Monolithically integrated In0.53Ga0.47As/In0.52Al0.48As front-end photoreceivers realized by molecular beam epitaxy and regrowth techniques (1990) (0)
- Anneal time study of Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy (2007) (0)
- (Invited) Si/SiGe Resonant Interband Tunnel Diodes Grown by Large-Area Chemical Vapor Deposition (2013) (0)
- Guest Editorial Special Section on the Second Electron Devices Technology and Manufacturing (EDTM) Conference 2018 (2018) (0)
- Resonant Tunneling and Room Temperature Negative Differential Resistance in TiO 2 /MEH-PPV Junctions for Quantum Functional Circuits (2006) (0)
- Optically interconnected static RAM for instruction-level parallel processors (1999) (0)
- Electrical and optical properties of phosphorus doped Ge1−yCy (1998) (0)
- Monolithic integration of GaAs and h~~~~Ga~.~As lasers by molecular epitaxy on GaAs (1991) (0)
- Monolithic p-i-n-FET photoreceivers (1994) (0)
- Temperature Characterization of Unipolar-Doped Electroluminescence in Vertical GaN/AlN Heterostructures (2021) (0)
- Foreword Special Issue on Advanced Technology for Ultra-Low Power Electronic Devices (2016) (0)
- Demonstration of hybrid prototype sealant for encapsulating organic photovoltaics (2012) (0)
- A pGe C / nSi Heterojunction Diode Grown by Molecular Beam Epitaxy (1997) (0)
- ‘ ‘ p-onn ’ ’ Si interband tunnel diode grown by molecular beam epitaxy (2001) (0)
- Ge1-xCx/Si heterojunction photodiode (1997) (0)
- Monolithic GaAs p-i-n/MESFET photoreceiver (1993) (0)
- Plastic Low-Cost Circuits Enabled Through Nanotechnology (2013) (0)
- Low Sidewall Damage Plasma Etching with ICP-RIE and HBr Chemistry of Si/SiGe Resonant Interband Tunnel Diodes (2005) (0)
- Si-Based Resonant Interband Tunnel Diode/CMOS Integrated Memory Circuit (2006) (0)
- Fabrication and Characterization of GaN/AlN Resonant Tunneling Diodes (2019) (0)
- Quantum Tunneling for Ultra-Low-Power Scaled CMOS (2013) (0)
- New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDs (2019) (0)
- Effects of substrate tilting in substantial improvement of DC performance of AlGaAs/GaAs n-p-n DHBTs grown by MBE (1991) (0)
- Low sidewall damage plasma etching using (2000) (0)
- A combined model for Si-based resonant interband tunneling diodes grown on SOI (2004) (0)
- Monolithic vertical integration of Si/SiGe HBT and Si-based resonant interband tunneling diode demonstrating latching operation and adjustable peak-to-valley current ratios (2003) (0)
- Nonlinear all-optical modulation in a GaAs/AIGaAs multiple quantum well vertical directional coupler (1988) (0)
- 200-mm CVD Grown Si/SiGe Resonant Interband Tunnel Diodes Optimized for High Peak-to-Valley Current Ratios (2012) (0)
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