Peter Asbeck
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American engineer
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Engineering
Peter Asbeck's Degrees
- PhD Electrical Engineering Stanford University
- Bachelors Aerospace Engineering California Institute of Technology
Why Is Peter Asbeck Influential?
(Suggest an Edit or Addition)According to Wikipedia, Peter Asbeck is an American engineer, currently the Skyworks Professor in High Performance Communications Devices and Circuits at the University of California, San Diego Jacobs School of Engineering, and a publisher author. He is a member of the National Academy of Engineering. for contributions to heterojunction bipolar transistor and integrated circuit technology. He is a power amplifier expert. In 2000, Peter Asbeck was elevated to IEEE fellow for development of heterostructure bipolar transistors and applications.
Peter Asbeck's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Power amplifiers and transmitters for RF and microwave (2002) (1274)
- High-efficiency power amplifier using dynamic power-supply voltage for CDMA applications (1999) (372)
- Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors (1997) (322)
- An Improved Power-Added Efficiency 19-dBm Hybrid Envelope Elimination and Restoration Power Amplifier for 802.11g WLAN Applications (2006) (315)
- An extended Doherty amplifier with high efficiency over a wide power range (2001) (311)
- Design of wide-bandwidth envelope-tracking power amplifiers for OFDM applications (2005) (307)
- High-Efficiency Envelope-Tracking W-CDMA Base-Station Amplifier Using GaN HFETs (2006) (295)
- Piezoelectric charge densities in AlGaN/GaN HFETs (1997) (273)
- Open-Loop Digital Predistorter for RF Power Amplifiers Using Dynamic Deviation Reduction-Based Volterra Series (2008) (256)
- Self‐absorption effects on the radiative lifetime in GaAs‐GaAlAs double heterostructures (1977) (238)
- A Monolithic High-Efficiency 2.4-GHz 20-dBm SiGe BiCMOS Envelope-Tracking OFDM Power Amplifier (2007) (220)
- A Watt-Level Stacked-FET Linear Power Amplifier in Silicon-on-Insulator CMOS (2010) (208)
- Spontaneous and piezoelectric polarization effects in III-V nitride heterostructures (1999) (207)
- GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application (1989) (200)
- Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers (2013) (199)
- Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals (2010) (182)
- Current mode class-D power amplifiers for high efficiency RF applications (2001) (174)
- A 25 dBm Digitally Modulated CMOS Power Amplifier for WCDMA/EDGE/OFDM With Adaptive Digital Predistortion and Efficient Power Control (2009) (171)
- Digital Predistortion for Envelope-Tracking Power Amplifiers Using Decomposed Piecewise Volterra Series (2008) (162)
- Salicidation process using NiSi and its device application (1997) (145)
- Linear high-efficiency microwave power amplifiers using bandpass delta-sigma modulators (1998) (141)
- Scaling of Nanowire Transistors (2008) (139)
- Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm (2010) (138)
- Schottky barrier engineering in III-V nitrides via the piezoelectric effect (1998) (137)
- Ultra-low resistance ohmic contacts in graphene field effect transistors (2012) (135)
- Design of Tunneling Field-Effect Transistors Based on Staggered Heterojunctions for Ultralow-Power Applications (2010) (122)
- RF and Microwave Power Amplifier and Transmitter Technologies — Part 1 (2003) (122)
- Enhanced Electromagnetic Interference Shielding Through the Use of Functionalized Carbon-Nanotube-Reactive Polymer Composites (2010) (118)
- An intelligently controlled RF power amplifier with a reconfigurable MEMS-varactor tuner (2005) (117)
- Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor (2000) (117)
- Graphene: Status and prospects as a microwave material (2011) (114)
- A Distributed Bulk-Oxide Trap Model for $\hbox{Al}_{2} \hbox{O}_{3}$ InGaAs MOS Devices (2012) (114)
- A Combined Series-Parallel Hybrid Envelope Amplifier for Envelope Tracking Mobile Terminal RF Power Amplifier Applications (2012) (113)
- Be redistribution during growth of GaAs and AlGaAs by molecular beam epitaxy (1985) (111)
- Digital generation of RF signals for wireless communications with band-pass delta-sigma modulation (2001) (106)
- Wideband envelope elimination and restoration power amplifier with high efficiency wideband envelope amplifier for WLAN 802.11g applications (2005) (104)
- Low-Phase-Noise Graphene FETs in Ambipolar RF Applications (2011) (103)
- AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process (1987) (102)
- ET Comes of Age: Envelope Tracking for Higher-Efficiency Power Amplifiers (2016) (102)
- Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits (1987) (101)
- Wideband Envelope Tracking Power Amplifiers With Reduced Bandwidth Power Supply Waveforms and Adaptive Digital Predistortion Techniques (2009) (101)
- Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor (1999) (99)
- Piezoelectric effects in GaAs FET's and their role in orientation-dependent device characteristics (1984) (98)
- Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency (2011) (97)
- Design of H-Bridge Class-D Power Amplifiers for Digital Pulse Modulation Transmitters (2007) (96)
- Enhanced dielectric constants and shielding effectiveness of, uniformly dispersed, functionalized carbon nanotube composites (2009) (92)
- GaAs/(Ga,Al)As heterojunction bipolar transistors with buried oxygen-implanted isolation layers (1984) (89)
- Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation (2009) (88)
- A high average-efficiency SiGe HBT power amplifier for WCDMA handset applications (2005) (87)
- $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth (2009) (87)
- Advanced thin-film silicon-on-sapphire technology: microwave circuit applications (1998) (87)
- Envelope tracking power amplifier with pre-distortion linearization for WLAN 802.11g (2004) (85)
- A Wideband CMOS/GaAs HBT Envelope Tracking Power Amplifier for 4G LTE Mobile Terminal Applications (2012) (83)
- Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz (2011) (82)
- Ultrahigh power efficiency operation of common-emitter and common-base HBT's at 10 GHz (1990) (81)
- Design of high-efficiency current-mode class-D amplifiers for wireless handsets (2005) (81)
- Single-Length Method Used to Determine the Dielectric Constant of Polydimethylsiloxane (2008) (79)
- Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion (2001) (79)
- Gain/phase imbalance-minimization techniques for LINC transmitters (2001) (76)
- A power re-use technique for improved efficiency of outphasing microwave power amplifiers (1999) (75)
- High Efficiency WCDMA Envelope Tracking Base-Station Amplifier Implemented with GaAs HVHBTs (2009) (73)
- Design of linear RF outphasing power amplifiers (2003) (73)
- Linearity characteristics of GaAs HBTs and the influence of collector design (2000) (70)
- Lateral mode behavior in narrow stripe lasers (1979) (70)
- Digitally Assisted Dual-Switch High-Efficiency Envelope Amplifier for Envelope-Tracking Base-Station Power Amplifiers (2011) (70)
- Superior electromagnetic interference shielding and dielectric properties of carbon nanotube composites through the use of high aspect ratio CNTs and three-roll milling (2013) (68)
- High Efficiency Envelope Tracking LDMOS Power Amplifier for W-CDMA (2006) (68)
- A SiGe PA with dual dynamic bias control and memoryless digital predistortion for WCDMA handset applications (2005) (67)
- Graphene FETs for Zero-Bias Linear Resistive FET Mixers (2013) (67)
- Multi-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS (2014) (66)
- Comparison of microwave inductors fabricated on silicon-on-sapphire and bulk silicon (1996) (66)
- Large-signal HBT model with improved collector transit time formulation for GaAs and InP technologies (2003) (66)
- Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by electrical measurement (1992) (64)
- Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model (2009) (64)
- Transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructures (2002) (64)
- An Analytical Model for Inductively Coupled Implantable Biomedical Devices With Ferrite Rods (2009) (64)
- A CMOS dual-switching power-supply modulator with 8% efficiency improvement for 20MHz LTE Envelope Tracking RF power amplifiers (2013) (63)
- CMOS Outphasing Class-D Amplifier With Chireix Combiner (2007) (61)
- A 2-Bit, 24 dBm, Millimeter-Wave SOI CMOS Power-DAC Cell for Watt-Level High-Efficiency, Fully Digital m-ary QAM Transmitters (2013) (61)
- Active Millimeter-Wave Phase-Shift Doherty Power Amplifier in 45-nm SOI CMOS (2013) (61)
- Bandpass delta-sigma class-S amplifier (2000) (60)
- Modeling and Design of RF Amplifiers for Envelope Tracking WCDMA Base-Station Applications (2009) (59)
- Memory effect evaluation and predistortion of power amplifiers (2005) (59)
- GaAs/(GaAl)As heterojunction bipolar transistors using a self-aligned substitutional emitter process (1986) (58)
- Piezoelectric polarization associated with dislocations in wurtzite GaN (1999) (58)
- Multigate-Cell Stacked FET Design for Millimeter-Wave CMOS Power Amplifiers (2016) (57)
- Interface-State Modeling of $\hbox{Al}_{2}\hbox{O}_{3}$ –InGaAs MOS From Depletion to Inversion (2012) (57)
- Wideband envelope tracking power amplifier with reduced bandwidth power supply waveform (2009) (57)
- 28 GHz Doherty Power Amplifier in CMOS SOI With 28% Back-Off PAE (2018) (56)
- Novel Technique for Wideband Digital Predistortion of Power Amplifiers With an Under-Sampling ADC (2014) (56)
- GaAs-based heterojunction bipolar transistors for very high performance electronic circuits (1993) (56)
- Closed-Loop Digital Predistortion System With Fast Real-Time Adaptation Applied to a Handset WCDMA PA Module (2012) (55)
- A 6-b, 4 GSa/s GaAs HBT ADC (1995) (55)
- Power Amplifiers for mm-Wave 5G Applications: Technology Comparisons and CMOS-SOI Demonstration Circuits (2019) (54)
- A Q-Band Amplifier Implemented with Stacked 45-nm CMOS FETs (2011) (54)
- Analysis of power recycling techniques for RF and microwave outphasing power amplifiers (2002) (54)
- Doherty amplifier with DSP control to improve performance in CDMA operation (2003) (54)
- Adaptive duplexer implemented using single-path and multipath feedforward techniques with BST phase shifters (2005) (54)
- High-Efficiency WCDMA Envelope Tracking Base-Station Amplifier Implemented With GaAs HVHBTs (2008) (53)
- A 20 dBm Linear RF Power Amplifier Using Stacked Silicon-on-Sapphire MOSFETs (2006) (53)
- Microwave power amplifier efficiency improvement with a 10 MHz HBT DC-DC converter (1998) (53)
- Antenna impedance mismatch measurement and correction for adaptive CDMA transceivers (2005) (53)
- Numerical simulation of GaAs/GaAlAs heterojunction bipolar transistors (1982) (52)
- Heterojunction bipolar transistors implemented with GaInNAs materials (2002) (51)
- (GaAl)As/GaAs heterojunction bipolar transistors with graded composition in the base (1983) (51)
- Second‐harmonic generation with Ga1−xAlxAs lasers and KNbO3 crystals (1979) (51)
- Linearity Improvement of HBT-Based Doherty Power Amplifiers Based on a Simple Analytical Model (2006) (51)
- A numerical Schrödinger–Poisson solver for radially symmetric nanowire core–shell structures (2006) (50)
- Wideband envelope tracking power amplifiers for wireless communications (2014) (50)
- A $\mu$ W Complementary Bridge Rectifier With Near Zero Turn-on Voltage in SOS CMOS for Wireless Power Supplies (2012) (50)
- Microwave power amplifiers with digitally-controlled power supply voltage for high efficiency and high linearity (2000) (49)
- Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications (1993) (48)
- Synergistic design of DSP and power amplifiers for wireless communications (2000) (48)
- 50% PAE WCDMA basestation amplifier implemented with GaN HFETs (2005) (48)
- A 34% PAE, 18.6dBm 42–45GHz stacked power amplifier in 45nm SOI CMOS (2012) (47)
- RF and Microwave Power Amplifier and Transmitter Technologies — Part 3 (2003) (46)
- Non‐Gaussian fundamental mode patterns in narrow‐stripe‐geometry lasers (1978) (45)
- Near zero turn-on voltage high-efficiency UHF RFID rectifier in silicon-on-sapphire CMOS (2010) (44)
- Cryogenic Characterization of 22-nm FDSOI CMOS Technology for Quantum Computing ICs (2019) (44)
- Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection (2012) (43)
- A theory of high-frequency distortion in bipolar transistors (2003) (42)
- A 30 GHz bandwidth AlGaAs-GaAs HBT direct-coupled feedback amplifier (1991) (42)
- Augmented behavioral characterization for modeling the nonlinear response of power amplifiers (2002) (42)
- Neural recording and stimulation using wireless networks of microimplants (2021) (42)
- Bandpass delta-sigma modulator with 800 MHz center frequency (1997) (42)
- Wideband high efficiency digitally-assisted envelope amplifier with dual switching stages for radio base-station envelope tracking power amplifiers (2010) (41)
- Enhancement of base conductivity via the piezoelectric effect in AlGaN/GaN HBTs (2000) (40)
- High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base (1991) (40)
- P/He ion implant isolation technology for AlGaN/GaN HFETs (1998) (39)
- A Distributed Model for Border Traps in MOS Devices (2011) (39)
- Lateral Graphene Heterostructure Field-Effect Transistor (2013) (39)
- RF and Microwave Power Amplifier and Transmitter Technologies — Part 2 (2003) (39)
- Correlation of threshold voltage of implanted field‐effect transistors and carbon in GaAs substrates (1984) (38)
- High efficiency GaN switching converter IC with bootstrap driver for envelope tracking applications (2013) (38)
- A reusable microfluidic plate with alternate-choice architecture for assessing growth preference in tissue culture (2005) (37)
- A high-speed, low-power divide-by-4 frequency divider implemented with AlInAs/GaInAs HBT's (1989) (37)
- A GaN PA for 4G LTE-Advanced and 5G: Meeting the Telecommunication Needs of Various Vertical Sectors Including Automobiles, Robotics, Health Care, Factory Automation, Agriculture, Education, and More (2017) (37)
- Microwave performance of optically fabricated T-gate thin film silicon-on-sapphire based MOSFET's (1995) (37)
- Ta-based interface ohmic contacts to AlGaN/GaN heterostructures (2001) (37)
- Will Doherty continue to rule for 5G? (2016) (37)
- High speed GaAs integrated circuits (1982) (37)
- A 20-GHz frequency divider implemented with heterojunction bipolar transistors (1987) (37)
- A high-speed LSI GaAs 8x8 bit parallel multiplier (1982) (36)
- III–V FET channel designs for high current densities and thin inversion layers (2010) (36)
- RF and Microwave Power Amplifier and Transmitter Technologies — Part 4 (2003) (35)
- $Q$ -Band and $W$ -Band Power Amplifiers in 45-nm CMOS SOI (2012) (35)
- Application of thermal pulse annealing to ion-implanted GaAlAs/GaAs heterojunction bipolar transistors (1983) (35)
- Fabrication and characterisation of enhanced barrier AlGaN/GaN HFET (1999) (35)
- A Distributed Model for Border Traps in $\hbox{Al}_{2} \hbox{O}_{3}-\hbox{InGaAs}$ MOS Devices (2011) (35)
- H-Bridge Class-D Power Amplifiers for Digital Pulse Modulation Transmitters (2007) (35)
- Voltage Mode Doherty Power Amplifier (2017) (35)
- Generation of RF pulsewidth modulated microwave signals using delta-sigma modulation (2002) (34)
- High efficiency envelope tracking power amplifier with very low quiescent power for 20 MHz LTE (2011) (34)
- InP/InGaAs heterojunction bipolar transistors grown by gas-source molecular beam epitaxy with carbon-doped base (1992) (34)
- Single-Ended and Differential Radial Power Combiners Implemented With a Compact Broadband Probe (2010) (33)
- cw GaAs/GaAlAs DH lasers grown by Peltier-induced LPE (1977) (33)
- Impact ionization coefficients in (100) GaInP (1995) (33)
- Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications (1999) (33)
- A PMOS mm-wave power amplifier at 77 GHz with 90 mW output power and 24% efficiency (2016) (33)
- Improved design technique of a microwave class-E power amplifier with finite switching-on resistance (2002) (32)
- Effects of Cr redistribution on electrical characteristics of ion-implanted semi-insulating GaAs (1980) (32)
- High speed, high analog bandwidth buck converter using GaN HEMTs for envelope tracking power amplifier applications (2013) (32)
- A 26.5 GHz silicon MOSFET 2:1 dynamic frequency divider (2000) (31)
- Photoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure (1992) (31)
- AlGaAs/GaAs HBT IC's for high-speed lightwave transmission systems (1992) (31)
- GaAs/GaAlAs heterojunction bipolar transistors with cutoff frequencies above 10 GHz (1982) (30)
- Role of the piezoelectric effect in device uniformity of GaAs integrated circuits (1984) (30)
- Frequency doublers with 10.2/5.2 dBm peak power at 100/202 GHz in 45nm SOI CMOS (2015) (30)
- Digitally-Controlled Polar Transmitter Using a Watt-Class Current-Mode Class-D CMOS Power Amplifier and Guanella Reverse Balun for Handset Applications (2012) (30)
- A 6-bit, 4 GSa/s ADC fabricated in a GaAs HBT process (1994) (28)
- 15 GHz Doherty Power Amplifier With RF Predistortion Linearizer in CMOS SOI (2018) (28)
- An Implantable Wireless Network of Distributed Microscale Sensors for Neural Applications (2019) (28)
- Microwave structures for traveling-wave MQW electroabsorption modulators for wideband 1.3-μm photonic links (1997) (28)
- Time domain characterization of power amplifiers with memory effects (2003) (27)
- Transmission of Signals With Complex Constellations Using Millimeter-Wave Spatially Power-Combined CMOS Power Amplifiers and Digital Predistortion (2015) (27)
- High-speed 8:1 multiplexer and 1:8 demultiplexer implemented with AlGaAs/GaAs HBTs (1991) (27)
- RF and Microwave Power Amplifier and Transmitter Technologies — Part 5 (2004) (27)
- Graded-base InGaN∕GaN heterojunction bipolar light-emitting transistors (2006) (27)
- InGaN/GaN Schottky Diodes With Enhanced Voltage Handling Capability for Varactor Applications (2010) (26)
- GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTs): optimization of fabrication process and epitaxial layer structure for high-efficiency high-power amplifiers (2000) (26)
- A 45GHz Doherty power amplifier with 23% PAE and 18dBm output power, in 45nm SOI CMOS (2012) (26)
- All-Digital Cancellation Technique to Mitigate Receiver Desensitization in Uplink Carrier Aggregation in Cellular Handsets (2013) (26)
- High-performance low-base-collector capacitance AlGaAs/GaAs heterojunction bipolar transistors fabricated by deep ion implantation (1995) (25)
- AlGaAs/GaAs heterojunction bipolar transistor circuits with improved high-speed performance (1986) (25)
- Porous silicon technology for RF integrated circuit applications (1998) (25)
- Design of a Wideband High-Voltage High-Efficiency BiCMOS Envelope Amplifier for Micro-Base-Station RF Power Amplifiers (2012) (25)
- Efficiency and linearity improvement in power amplifiers for wireless communications (1998) (25)
- Optimum bias conditions for linear broadband InGaP/GaAs HBT power amplifiers (2002) (24)
- Concurrent Dual-Band Digital Predistortion With a Single Feedback Loop (2015) (24)
- A nonlinear capacitance cancellation technique and its application to a CMOS class AB power amplifier (2001) (24)
- Analysis of Reverse Leakage Current and Breakdown Voltage in GaN and InGaN/GaN Schottky Barriers (2011) (24)
- GaAs/Ga0.89In0.11N0.02As0.98/GaAs NpN double heterojunction bipolar transistor with low turn-on voltage (2002) (24)
- High-Order Modulation Transmission Through Frequency Quadrupler Using Digital Predistortion (2016) (24)
- High‐density optical recording with (Ga,Al)As DH lasers (1979) (23)
- An 80MHz modulation bandwidth high efficiency multi-band envelope-tracking power amplifier using GaN single-phase buck-converter (2017) (23)
- Efficiency Enhancement of mm-Wave Power Amplifiers Using Envelope Tracking (2011) (23)
- Self-consistent 1-D Schrödinger–Poisson solver for III–V heterostructures accounting for conduction band non-parabolicity (2010) (23)
- An efficient voltage-mode class-D power amplifier for digital transmitters with delta-sigma modulation (2011) (23)
- Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN (2014) (23)
- A 42 to 47-GHz, 8-bit I/Q digital-to-RF converter with 21-dBm Psat and 16% PAE in 45-nm SOI CMOS (2013) (22)
- InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions (1993) (22)
- A high-speed multimodulus HBT prescaler for frequency synthesizer applications (1991) (22)
- Transmitter architecture using digital generation of RF signals (2003) (22)
- A 45-GHz SiGe HBT amplifier at greater than 25 % efficiency and 30 mW output power (2011) (22)
- High power GaAlAs/GaAs HBTs for microwave applications (1987) (22)
- Comparison of pMOS and nMOS 28 GHz high efficiency linear power amplifiers in 45 nm CMOS SOI (2018) (21)
- A high-speed gate array implemented with AlGaAs/GaAs heterojunction bipolar transistors (1989) (21)
- A 33-dBm 1.9-GHz silicon-on-insulator CMOS stacked-FET power amplifier (2009) (21)
- Digital signal processing - up to microwave frequencies (2002) (21)
- Spatially power-combined W-band power amplifier using stacked CMOS (2014) (21)
- 18 GHz high gain, high efficiency power operation of AlGaAs/GaAs HBT (1990) (20)
- Design of a 4-W Envelope Tracking Power Amplifier With More Than One Octave Carrier Bandwidth (2012) (20)
- Nonthreshold logic ring oscillators implemented with GaAs/(GaAl)As heterojunction bipolar transistors (1984) (20)
- Broadband high PAE GaN push-pull power amplifier for 500MHz to 2.5 GHz operation (2013) (20)
- High current gain InGaN/GaN HBTs with 300°C operating temperature (2006) (20)
- III-V HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED APPLICATIONS (1990) (20)
- 28 GHz >250 mW CMOS Power Amplifier Using Multigate-Cell Design (2015) (19)
- Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide. (2014) (19)
- Implementation of reduced turn-on voltage InGaP HBTs using graded GaInAsN base regions (2002) (18)
- A 1 W CMOS power amplifier for GSM-1800 with 55% PAE (2001) (18)
- A 1 W 0.35 /spl mu/m CMOS power amplifier for GSM-1800 with 45% PAE (2001) (18)
- Co-integration of GaAlAs/GaAs HBTs and GaAs FETs with a simple, manufacturable process (1992) (18)
- Physical modeling of degenerately doped compound semiconductors for high-performance HBT design (2006) (18)
- COMPUTATIONALLY EFFICIENT MODEL FOR UWB SIGNAL ATTENUATION DUE TO PROPAGATION IN TISSUE FOR BIOMEDICAL IMPLANTS (2012) (18)
- (Ga,Al)As/GaAs bipolar transistors for digital integrated circuits (1981) (18)
- Over 65% PAE GaN voltage-mode class d power amplifier for 465 MHz operation using bootstrap drive (2015) (18)
- A 11% PAE, 15.8-dBm two-stage 90-GHz stacked-FET power amplifier in 45-nm SOI CMOS (2013) (17)
- Thermal effects in HBT emitter resistance extraction (1996) (17)
- A high-efficiency HBT MMIC power amplifier (1990) (17)
- Millimeter-Wave Power Amplifier Integrated Circuits for High Dynamic Range Signals (2021) (17)
- Development toward wafer-scale graphene RF electronics (2009) (17)
- Dynamic Gate Bias Technique for Improved Linearity of GaN HFET Power Amplifiers (2005) (17)
- Characterization of Intermodulation and Memory Effects Using Offset Multisine Excitation (2014) (17)
- Plane-selective doped AlGaAs/GaAs double heterostructure light emitting diodes (1987) (17)
- Digital predistortion for envelope tracking power amplifiers (2012) (17)
- Long Time-Constant Trap Effects in Nitride Heterostructure Field Effect Transistors (2000) (17)
- Effects of device design on the thermal properties of InP-based HBTs (2003) (17)
- A 25-dBm high-efficiency digitally-modulated SOI CMOS power amplifier for multi-standard RF polar transmitters (2009) (16)
- $Q$-Band Spatially Combined Power Amplifier Arrays in 45-nm CMOS SOI (2015) (16)
- Effect of maximum power supply voltage on envelope tracking power amplifiers using GaN HEMTs (2011) (16)
- Scaling MOSFETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source (2009) (16)
- Envelope tracking power amplifiers with reduced peak-to-average power ratio RF input signals (2010) (16)
- High speed 8:1 multiplexer and 1:8 demultiplexer implanted with AlGaAs/GaAs HBTs (1990) (16)
- AlGaAs/GaAs P-n-p HBTs with high maximum frequency of oscillation (1990) (16)
- First demonstration of sub-0.25/spl mu/m-width emitter InP-DHBTs with > 400 GHz f/sub t/ and > 400 GHz f/sub max/ (2004) (15)
- Transfer of patterned ion-cut silicon layers (1998) (15)
- Device and circuit approaches for improved wireless communications transmitters (1999) (15)
- Microwave performance of GaAs/(Ga,Al)As heterojunction bipolar transistors (1984) (15)
- Projected Performance of Heterostructure Tunneling FETs in Low Power Microwave and mm-Wave Applications (2015) (15)
- A 2Gs/s HBT sample and hold (1988) (15)
- Minority carrier transport properties of GaInNAs heterojunction bipolar transistors with 2% nitrogen (2004) (15)
- Growth of InGaN HBTs by MOCVD (2006) (15)
- A wideband voltage mode Doherty power amplifier (2016) (15)
- Effect of envelope amplifier nonlinearities on the output spectrum of Envelope Tracking Power Amplifiers (2012) (14)
- An Envelope-Tracking CMOS-SOS Power Amplifier with 50% Overall PAE and 29.3 dBm Output Power for LTE Applications (2012) (14)
- AlGaAs/InGaAs/GaAs strained-layer heterojunction bipolar transistors by molecular beam epitaxy (1986) (14)
- 25 GHz HBT frequency dividers (1989) (14)
- 15 GHz 25 dBm multigate-cell stacked CMOS power amplifier with 32 % PAE and ≥ 30 dB gain for 5G applications (2016) (14)
- Design Options for High Efficiency Linear Handset Power Amplifiers (2009) (14)
- Active cancellation of switching noise for DC-DC converter-driven RF power amplifiers (2002) (14)
- A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI MOS (2013) (14)
- A 10-Gb/s high-isolation, 16/spl times/16 crosspoint switch implemented with AlGaAs/GaAs HBT's (2000) (14)
- A submicrometer 252 GHz f/sub T/ and 283 GHz f/sub MAX/ InP DHBT with reduced C/sub BC/ using selectively implanted buried subcollector (SIBS) (2005) (14)
- Digital cancellation technique to mitigate receiver desensitization in cellular handsets operating in carrier aggregation mode with multiple uplinks and multiple downlinks (2015) (14)
- A CMOS 45 GHz power amplifier with output power > 600 mW using spatial power combining (2014) (13)
- DEVICE AND CIRCUIT APPROACHES FOR NEXT-GENERATION WIRELESS COMMUNICATIONS (1999) (13)
- High efficiency wideband envelope tracking power amplifier with direct current sensing for LTE applications (2012) (13)
- III-V MOSFETs: Scaling laws, scaling limits, fabrication processes (2010) (13)
- Influence of collector design on InGaP/GaAs HBT linearity (2000) (13)
- All-digital cancellation technique to mitigate self-jamming in uplink carrier aggregation in cellular handsets (2013) (13)
- Efficient and wideband envelope amplifiers for envelope tracking and polar transmitters (2013) (13)
- Silicon-on-sapphire MOSFET distributed amplifier with coplanar waveguide matching (1998) (13)
- Characterization and modeling of thermal effects in sub-micron InP DHBTs (2005) (13)
- Epitaxial graphene RF field-effect transistors (2009) (13)
- Experimental I-V characteristics of AlGaAs/GaAs and GaInP/GaAs (D)HBTs with thin bases (2000) (12)
- 49th Annual Device Research Conference (1991) (12)
- 11.6-GHz 1:4 regenerating demultiplexer with bit-rotation control and 6.1-GHz auto-latching phase-aligner ICs using AlGaAs/GaAs HBT technology (1992) (12)
- Digital polar transmitter using a watt-class current-mode class-D CMOS power amplifier (2011) (12)
- Technology development & design for 22 nm InGaAs/InP-channel MOSFETs (2008) (12)
- Synthesis Technique for Low-Loss mm-Wave T/R Combiners for TDD Front-Ends (2019) (12)
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- Nonideal effects of reconstruction filter and I/Q imbalance in digital predistortion (2006) (12)
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- Polarization charges and polarization-induced barriers in AlxGa1-xN/GaN and InyGa1-yN/GaN heterostructures (2001) (12)
- Submicron self-aligned HBT's by selective emitter regrowth (1998) (12)
- CMOS Power Amplifiers for Wireless Communications (2003) (12)
- A 45-GHz Si/SiGe 256-QAM transmitter with digital predistortion (2015) (11)
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- An Intrinsically Linear Transistor for Millimeter-Wave Low Noise Amplifiers. (2020) (11)
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- HBT application prospects in the US: where and when? (1991) (11)
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- Design of a 70 GHz Power Amplifier using a Digital InP HBT Process (2007) (10)
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- Calibration scheme for LINC transmitter (2001) (10)
- CMOS handset power amplifiers: Directions for the future (2012) (10)
- Selectively regrown carbon-doped (Al)GaAs by chemical beam epitaxy with novel gas sources (1995) (10)
- Efficiency improvement of a handset WCDMA PA module using Adaptive Digital Predistortion (2010) (10)
- A gain/phase imbalance minimization technique for LINC transmitter (2001) (10)
- Multifunctional RF Transmitters for Next Generation Wireless Transceivers (2007) (9)
- Microwave characteristics of high f/sub max/ low noise thin film silicon-on-sapphire MOSFETs (1995) (9)
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- Modeling of Deterministic Output Emissions of Power Amplifiers Into Adjacent Receive Bands (2015) (9)
- Development of HBT structure to minimize parasitic elements (1995) (9)
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- Digital control of RF power amplifiers for next-generation wireless communications (2005) (9)
- Silicon-on-sapphire MOSFET transmit/receive switch for L and S band transceiver applications (1997) (9)
- Effects of device design on the thermal properties of HBTs (2003) (9)
- A 2.4-GHz silicon-on-sapphire CMOS low-noise amplifier (1997) (9)
- Integrated DC-DC converter using GaAs HBT technology (1999) (9)
- InP HBT millimeter-wave power amplifier implemented using planar radial power combiner (2008) (9)
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- Accurate thermal analysis of GaN HFETs (2008) (9)
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- Direct measurement of C/sub be/ and C/sub bc/ versus voltage for small HBT's with microwave s-parameters for scaled Gummel-Poon BJT models (1999) (8)
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- Experimental method to thermally deembed pads from R/sub TH/ measurements (2006) (8)
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- III-V HBTs for microwave applications: technology status and modeling challenges (2000) (8)
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- Si IC development for high efficiency envelope tracking power amplifiers (2012) (7)
- Wideband high efficiency envelope tracking integrated circuit for micro-base station power amplifiers (2011) (7)
- Saturation charge storage measurements in GaInP/GaAs/GaAs and GaInP/GaAs/GaInP HBTs (1998) (7)
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- Chapter 3 LEC GaAs for Integrated Circuit Applications (1984) (7)
- A 53% PAE envelope tracking GaN power amplifier for 20MHz bandwidth LTE signals at 880MHz (2016) (7)
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- Device scaling technologies for ultra-high-speed GaN-HEMTs (2011) (6)
- A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI CMOS (2013) (6)
- Efficiency ehancement of W‐CDMA base‐station envelope tracking power amplifiers via load modulation (2007) (6)
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- High efficiency current-mode class-D amplifier with integrated resonator (2004) (6)
- Demonstration of low-knee voltage high-breakdown GaInP double HBTs using novel compound collector design (2002) (6)
- GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors with zero-offset and low-knee-voltage characteristics (2000) (6)
- A 29 dBm 1.9 GHz class B power amplifier in a digital CMOS process (2000) (6)
- Pathway for HBT Turn-on Voltage Reduction on a GaAs Platform (2001) (6)
- Virtual Gate Large Signal Model of GaN HFETs (2007) (6)
- Impact of compositionally graded base regions on the DC and RF properties of reduced turn-on voltage InGaP-GaInAsN DHBTs (2004) (6)
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- A three‐dimensional transmission line with coplanar waveguide features (2006) (6)
- WP-A2 Effects of Cr redistribution on device characteristics in ion-implanted GaAs IC's fabricated with semi-insulating GaAs (1979) (6)
- Fractional-N Direct Digital Frequency Synthesis with a 1-Bit Output (2006) (6)
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- 11.6 GHz 1:4 demultiplexer with bit-rotation control and 6.1 GHz auto-latching phase-aligner ICs (1992) (6)
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- In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic (1997) (6)
- Linear operation of high-power millimeter-wave stacked-FET PAs in CMOS SOI (2012) (6)
- Stacked Si MOSFET strategies for microwave and Mm-wave power amplifiers (2014) (6)
- Electrical properties of He+ ion-implanted GaInP (1994) (5)
- High-power, high-efficiency digital polar doherty power amplifier for cellular applications in SOI CMOS (2016) (5)
- HIGH-SPEED CIRCUITS FOR LIGHTWAVE COMMUNICATION SYSTEMS IMPLEMENTED WITH (ALGA)AS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS. (1987) (5)
- A 1–3 GHz Delta–Sigma-Based Closed-Loop Fully Digital Phase Modulator in 45-nm CMOS SOI (2017) (5)
- Digital signal injection technique for cancellation of receive-band spurious emissions in FDD cellular transmitters (2015) (5)
- Linearity and efficiency enhancement strategies for 4G wireless power amplifier designs (2008) (5)
- Enhanced Class-A/AB mobile terminal power amplifier efficiency by input envelope injection and “self” envelope tracking (2011) (5)
- Numerical study of inhomogeneity effects on Hall measurements of graphene films (2015) (5)
- Correlation techniques for estimation of amplifier nonlinearity (2004) (5)
- High-speed, High-efficiency millimeter-wave transmitters at 45 GHz in CMOS (2013) (5)
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- Phase-noise behaviour of frequency dividers implemented with GaAs heterojunction bipolar transistors (1985) (5)
- InP-based heterojunction bipolar transistors: performance status and circuit applications (1990) (5)
- GaN Envelope Tracking Power Amplifier with More Than One Octave Carrier Bandwidth (2011) (5)
- (Invited) Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source (2010) (5)
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- Deeply-Scaled E/D-Mode GaN-HEMTs for Sub-mm-Wave Amplifiers and Mixed-Signal Applications (2012) (5)
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- Second-harmonic generation with Ga/1-x/Al/x/As lasers and KNbO3 crystals (1979) (5)
- Improved Envelope Injection and Termination (EIT) RF Power Amplifier With Envelope Equalization for Mobile Terminal Applications (2014) (5)
- Experimental I-V characteristics of AlGaAs/GaAs heterojunction bipolar transistors with very thin bases (1996) (4)
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- A 27-Gbit/s 1:2 regenerating demultiplexer, 20-Gbit/s decision circuit and an 11-Gbit/s laser driver IC fabricated using AlGaAs/GaAs HBTs (1992) (4)
- Novel HBT structure for high f/sub t/ at low current density (1993) (4)
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- Design and characterization of GaAs-Ga/sub 0.89/In/sub 0.11/N/sub 0.02/As/sub 0.98/-GaAs NpN double heterojunction bipolar transistors with low turn-on voltage (2000) (4)
- Digital predistortion techniques for linearized power amplifiers (2006) (4)
- Digital predistortion of envelope-tracking power amplifiers under average power back-off and long-term average power efficiency for base-station applications (2013) (4)
- Technology development & design for 22 nm InGaAs/InP-channel MOSFETs (2008) (4)
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- 0.7–1.8 GHz multiband digital polar transmitter using watt-class current-mode class-D CMOS power amplifier and digital envelope modulation technique for reduced spurious emissions (2013) (4)
- Effects of surface micromesas on reverse leakage current in InGaN/GaN Schottky barriers (2012) (4)
- Herb's bipolar transistors (2001) (4)
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- HIGH SPEED CROSSPOINT SWITCHES (1998) (3)
- <formula formulatype="inline"><tex Notation="TeX">$Q$</tex> </formula>-Band and <formula formulatype="inline"><tex Notation="TeX">$W$</tex> </formula>-Band Power Amplifiers in 45-nm CMOS SOI (2012) (3)
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- 4-BIT QUANTIZER IMPLEMENTED WITH ALGAAS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS. (1987) (2)
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- Amplifier and Transmitter Technologies — Part 1 (2003) (1)
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- Session 11 Quantum electronics and compound-semiconductor devices — Heterojunction bipolar transistors (1986) (0)
- A Nested Reactive Feedback Power Amplifier for Q-band Operation (2011) (0)
- SESSION I: ADVANCED DEVICES AND MILLIMETER WAVE TECHNIQUES (1987) (0)
- LSI/VLSI (Large Scale Integration/Very Large Scale Integration) Ion Implanted GaAs (Gallium Arsenide) IC Processing (1984) (0)
- Electrical Engineering (Electronic Circuits and Systems) (2010) (0)
- Free-Standing High Power GaN Multi-Fin Camel Diode Varactors (2022) (0)
- Effective dispersion techniques of carbon-base polymer composite and its applications (2015) (0)
- WE 3 A-1 Doherty Amplifier with DSP Control to Improve Performance in CDMA Operation BE (2004) (0)
- Integrated Circuits for Wireless Communications: Research Activities at the University of California, San Diego: Circuits Research for Wireless Communications at the University of California, San Diego (2023) (0)
- Substrate Materials for GaAs Integrated Circuits (1983) (0)
- Behavioral Models for Receive-Band Noise Cancellation in RF Transceivers (2014) (0)
- Analysis of high DC current gain structures for GaN/InGaN/GaN HBTs (2004) (0)
- TU 3 F-52 Microwave Characterization of Submicron nand p-channel MOSFETs Fabricated with Thin Film Silicon-On-Sapphire (0)
- Heterojunction Bipolar Transistors : B-6: III-V DEVICE TECHNOLOGY (1983) (0)
- TPM 9.4: A 15GHz Gate Array Implemented with AlGaAslGaAs Heterojunction Bipolar Transistors (1997) (0)
- Design of millimeter wave optical modulators with monolithically integrated narrowband impedance matching circuits for 1.3-um photonic links (1996) (0)
- An Ebers-Moll model for heterostructure bipolar transistors with tunnel junctions (2002) (0)
- GaAs/(AlGa)As Heterojunction Bipolar Transistors (1982) (0)
- Very-Large-Gain Collector-Up GaN/W/WO3 Metal Base Transistors (2000) (0)
- GaAs LSI/VLSI's: Advantages and Applications (1984) (0)
- High speed devices (2011) (0)
- In-Situ Etch to Improve Chemical Beam Epitaxy Regrown AlgaAs/GaAs Interfaces for HBT Applications (1996) (0)
- Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz (2020) (0)
- Noninterfering optical method of HBT circuit evaluation (1989) (0)
- VIB-1 (Ga,Al)As/GaAs heterojunction bipolar transistors: Design considerations and experimental results (1982) (0)
- AlGaAs/GaAs HeteroJunction Bipolar Transistor Technology for Multi-Glga-Samples per Second ADCs (1994) (0)
- GaAs HBT Technology: Devices and Models for High Speed Circuit Design (1995) (0)
- High Efficiency mm-Wave Transmitter Array (2016) (0)
- A 29-dBm, 34% PAE E-Band Dual-Input Doherty Power Amplifier Using 40-nm GaN Technology (2022) (0)
- Development of wafer-scale graphene RF electronics (2010) (0)
- Electrical Engineering (Applied Physics) (2010) (0)
- A 2.4 GHz GaAs HBT stacked power amplifier with inductance compensation (2013) (0)
- PERFORMANCE COMPARISON OF SCALED III-V AND Si BALLISTIC NANOWIRE MOSFETs (2009) (0)
- CMOS-based power amplifiers and transmitters for Mm-wave applications (2014) (0)
- Electroabsorption multiple quantum well modulators for high-frequency applications (1997) (0)
- High Frequency Design RF POWER AMPLIFIERS RF and Microwave Power Amplifier and Transmitter Technologies — Part 3 By (2003) (0)
- Surface potential effects due to the piezoelectric charge associated with dislocations in GaN (1999) (0)
- IIIA-6 high-frequency performance of AlGaAs/InGaAs/GaAs strained layer heterojunction bipolar transistors (1986) (0)
- Materials and Structures for Advanced III-HBTs (1992) (0)
- Effect of layout variations on noise figure in a digital GaAs MESFET technology (1994) (0)
- Advances in graphene-based high-dynamic-range RF electronics (2013) (0)
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