Roderick A. B. Devine

Roderick A. B. Devine's AcademicInfluence.com Rankings

Chemistry

#5024

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#6126

Historical Rank

Nanotechnology

#177

World Rank

#177

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Chemical Engineering

#693

World Rank

#713

Historical Rank

chemistry Degrees

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Chemistry

Roderick A. B. Devine's Degrees

PhD Materials Science and Engineering University of California, Berkeley
Masters Chemical Engineering Stanford University

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Roderick A. B. Devine's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications (1998) (583)
The Physics and Technology of Amorphous SiO2 (1988) (190)
Macroscopic and microscopic effects of radiation in amorphous SiO2 (1994) (183)
Non-volatile memory device based on mobile protons in SiO2 thin films (1997) (148)
Structure and imperfections in amorphous and crystalline silicon dioxide (2000) (135)
Analysis of the vibrational mode spectra of amorphous SiO2 films (1995) (130)
Microscopic nature of border traps in MOS oxides (1994) (128)
Dielectric and infrared properties of TiO2 films containing anatase and rutile (2005) (120)
Ion implantation- and radiation-induced structural modifications in amorphous SiO2 (1993) (119)
Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor (1998) (113)
Structural nature of the Si/SiO2 interface through infrared spectroscopy (1996) (86)
Point defect generation during high temperature annealing of the Si‐SiO2 interface (1993) (78)
Interfacial hardness enhancement in deuterium annealed 0.25 μm channel metal oxide semiconductor transistors (1997) (76)
Concentration dependence of the dielectric constant in mixed oxides MxOyMp′Oq (2001) (75)
Origin of Radiation‐Induced Degradation in Polymer Solar Cells (2010) (73)
Paramagnetic defect centers in BESOI and SIMOX buried oxides (1993) (69)
Photon-induced oxygen loss in thin SiO/sub 2/ films (1984) (66)
Fabrication and characterization of Si-MOSFET's with PECVD amorphous Ta 2 O 5 gate insulator (1997) (64)
Conduction mechanisms in Ta2O5/SiO2 and Ta2O5/Si3N4 stacked structures on Si (1999) (63)
Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structures (1995) (60)
Microscopic structure of the E'/sub /spl delta// center in amorphous SiO/sub 2/: A first principles quantum mechanical investigation (1997) (60)
Electrical properties of Ta2O5 films obtained by plasma enhanced chemical vapor deposition using a TaF5 source (1996) (58)
Links between oxide, interface, and border traps in high‐temperature annealed Si/SiO2 systems (1994) (56)
Creation and annealing kinetics of magnetic oxygen vacancy centers in SiO2 (1983) (56)
Ultraviolet Irradiation Induced Compaction and Photoetching in Amorphous, Thermal SiO2 (1985) (54)
Calculations of Radiation Dose-Rate Sensitivity of Bipolar Transistors (2008) (51)
Nondestructive measurement of interfacial SiO2 films formed during deposition and annealing of Ta2O5 (1996) (50)
Densification‐induced infrared and Raman spectra variations of amorphous SiO2 (1988) (48)
Irradiation-induced ESR active defects in SIMOX structures (1990) (47)
Radiation damage and the role of structure in amorphous SiO2 (1990) (45)
Ultraviolet radiation induced defect creation in buried SiO2 layers (1991) (43)
Comparative study of radiation‐induced electrical and spin active defects in buried SiO2 layers (1992) (42)
Mechanism for anneal‐induced interfacial charging in SiO2 thin films on Si (1996) (42)
Low pressure microwave electron cyclotron resonance plasma deposition of amorphous Ta2O5 films (1994) (42)
Radiation Induced Structural Changes in Amorphous SiO2: I. Point Defects (1992) (42)
Infrared and electrical properties of amorphous sputtered (LaxAl1−x)2O3 films (2003) (40)
Excess‐Si related defect centers in buried SiO2 thin films (1993) (38)
Evidence of negative charge trapping in high temperature annealed thermal oxide (1994) (38)
The structure of SiO/sub 2/, its defects and radiation hardness (1994) (37)
Conduction-electron spin and orbital polarization effects in rare-earth Al 2 compounds (1978) (37)
Oxygen vacancy creation in SiO2 through ionization energy deposition (1983) (36)
Irreversible and reversible annealing of paramagnetic oxygen vacancies (E′1 centers) in oxygen‐implanted amorphous SiO2 (1984) (35)
Comparison between the properties of amorphous and crystalline Ta2O5 thin films deposited on Si (1999) (35)
Radiation induced damage and recovery in poly(3-hexyl thiophene) based polymer solar cells (2008) (34)
Influence of ion energy on the physical properties of plasma deposited SiO2 reset films (1993) (32)
O interstitial generation and diffusion in high temperature annealed Si/SiO2/Si structures (1996) (32)
Evidence for structural similarities between chemical vapor deposited and neutron irradiated SiO2 (1993) (31)
High resolution ultraviolet photoablation of SiOx films (1985) (31)
Irradiation response of mobile protons in buried SiO/sub 2/ films (1997) (29)
Enhanced MOS 1/f noise due to near-interfacial oxygen deficiency (1995) (29)
Thermally activated electron capture by mobile protons in SiO2 thin films (1998) (28)
Oxidation of crystalline Si in an O2 plasma: Growth kinetics and oxide characterization (1997) (28)
Mechanisms of damage recovery in ion implanted SiO2 (1984) (26)
Protonic nonvolatile field effect transistor memories in Si/SiO/sub 2//Si structures (1997) (26)
Evidence for hole and electron trapping in plasma deposited ZrO2 thin films (2001) (24)
The importance of network structure in high-k dielectrics: LaAlO3, Pr2O3, and Ta2O5 (2005) (24)
Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films (1998) (24)
Use of carbon-free Ta2O5 thin-films as a gate insulator (1997) (21)
X-ray irradiation effects in top contact, pentacene based field effect transistors for space related applications (2006) (21)
Conduction properties of amorphous Ta2O5 films prepared by plasma enhanced chemical vapour deposition (1995) (21)
Millitorr range PECVD of a-SiO2 films using TEOS and oxygen (1994) (20)
Thermally activated peroxy radical dissociation and annealing in vitreous SiO2 (1985) (20)
The electron spin resonance of erbium in palladium (1972) (20)
The Influence of Irradiation Temperature on U.V. Induced Defect Creation in Dry Silica (1985) (20)
Molecular volume and electronic and vibrational polarizibilities for amorphous LaAlO3 (2004) (19)
Dynamics of defect creation by ion implantation in thermal SiO2 (1984) (19)
Ultraviolet induced transformation of polysiloxane films (1991) (19)
Infrared properties of room-temperature-deposited ZrO2 (2001) (19)
Study of Ge bonding and distribution in plasma oxides of Si1−xGex alloys (1998) (19)
Conduction electron spin resonance in liquid and solid sodium (1970) (18)
Electrical and spin resonance characteristics of low‐temperature plasma‐enhanced chemical‐vapor‐deposited SiO2 (1989) (18)
Anomalous behaviour of the refractive index during the annealing of densified, amorphous SiO2 (1991) (18)
A proposed model for positive charge in SiO/sub 2/ thin films. Over-coordinated oxygen centers (1996) (18)
Comparative radiation sensitivity study of bulk, wet and dry amorphous SiO2 (1988) (17)
Interface design to improve stability of polymer solar cells for potential space applications (2011) (17)
On the physical models of annealing of radiation induced defects in amorphous Sio2 (1990) (17)
On the structure of low-temperature PECVD silicon dioxide films (1990) (17)
Hyperfine field in ordered Dy/sub 1-x/M/sub x/Al/sub 2/ (M = Y,Gd) compounds (1977) (16)
The paramagnetic resonance of Gd in single crystals of Pd (1972) (16)
Radiation damage produced in quartz by energetic ions (1992) (16)
Improved morphology and performance from surface treatments of naphthalenetetracarboxylic diimide bottom contact field-effect transistors. (2009) (15)
Energetic ion impacts on quartz surfaces: a study by atomic force microscopy (1996) (15)
Isothermal annealing of E'1 defects in ion implanted SiO2 (1984) (15)
Influence of ionizing radiation on predamaged, amorphous SiO2 (1985) (15)
Fabrication and characterization of Si-MOSFET's with PECVD amorphous Ta2O5 gate insulator (1997) (15)
Improvement of silicon oxide film properties by ultraviolet excimer lamp annealing (1995) (15)
Charge trapping in and electrical properties of pulsed laser deposited Sm2O3 films (2003) (14)
H+ and D+ associated charge buildup during annealing of Si/SiO2/Si structures (1997) (14)
Role of bond coordination and molecular volume on the dielectric constant of mixed-oxide compounds (2001) (14)
Microscopic mechanisms of radiation-induced proton density decay in SiO/sub 2/ films (1998) (14)
Densification and porosity in low-temperature-deposited oxide (1989) (14)
The role of activation energy distributions in diffusion related annealing in SiO2 (1985) (13)
Electric-field-induced transport of protons in amorphous SiO 2 (2001) (13)
Dispersive transport of protons in oxides confined in Si/SiO 2 /Si structures (2000) (13)
The crystalline electric field ground states for Er, Dy and Tm in YAl2 (1973) (13)
Radiation induced trap levels in SIMOX oxides: low temperature thermally stimulated luminescence (1997) (13)
Dielectric Permittivity of Amorphous and Hexagonal Electron Cyclotron Resonance Plasma Deposited Ta2 O 5 Thin Films (1999) (13)
NONUNIFORM OXIDE CHARGE AND PARAMAGNETIC INTERFACE TRAPS IN HIGH-TEMPERATURE ANNEALED SI/SIO2/SI STRUCTURES (1996) (12)
Neutron spectroscopy of rare-earths in LaAl2 (1982) (12)
Effect of high temperature processing of Si/SiO2/Si structures on their response to x-ray irradiation (1993) (12)
Theoretical and experimental study of the conduction mechanism in Al/Ta2O5/SiO2/Si and Al/Ta2O5/Si3N4/Si structures (1999) (12)
Influence of magnetic order on the crystal field in cubic alloys (1977) (11)
Exchange-relaxation narrowing of the fine structure of Gd in single crystals of Pd (1975) (11)
Conduction-electron contribution to electric field gradients in rare-earth metals (1973) (11)
Low‐temperature oxidation of Si in a microwave electron cyclotron resonance excited O2 plasma (1995) (11)
Radiation-induced H+ trapping in buried SiO2 (1997) (11)
Determination of the 4f shell magnetic moment in cubic rare-earth intermetallic compounds (1984) (11)
Ultraviolet-induced defect creation in amorphous SiO2 exposed to an O2 plasma (1990) (11)
Electrical and physical properties of room temperature deposited, mixed TiO2∕SiO2 oxidesa) (2006) (11)
Ultraviolet‐induced annealing of hydrogen bonds in silica films deposited at low temperatures (1992) (11)
Defect reactivation and structural relaxation in deposited amorphous SiO2 (1991) (11)
Defects in a‐SiO2 deposited from a tetraethoxysilane‐oxygen plasma (1991) (11)
Structural Effects in the Dielectric Constant of Rare-Earth Oxides: Nd2O3 (2006) (10)
High‐frequency sound as a probe of exchange energy in nickel (1982) (10)
The electron paramagnetic resonance of Dy in single crystals of Pd (1972) (10)
Growth kinetics and physical characterisation of Si1−xGexO2 films obtained by plasma assisted oxidation (1999) (10)
Electric field dependent paramagnetic defect creation in single-step high dose oxygen implanted SIMOX films (1992) (9)
Kinetics and characterization of plasma grown aluminium oxide (1998) (9)
Molecular volume dependence of the electronic and ionic polarizabilities in TiO2 and SiO2 (2005) (9)
Generation and attenuation of phonons at ferromagnetic resonance in thick Ni films (1979) (9)
Evidence for easy axis rotation in Dy1−xGdxAl2 alloys from nuclear hyperfine field measurements (1979) (9)
The paramagnetic resonance of Gd in Laves phase di-aluminide compounds (1977) (9)
4f moment determination from nmr in re intermetallics (1981) (9)
Insight into the multicomponent nature of negative bias temperature instability (2013) (9)
Paramagnetic resonance of Er and Dy in ScAl2 (1975) (9)
Ionizing radiation induced parametric variations in P3HT:PCBM organic photovoltaic cells (2015) (9)
Photoinduced fixed oxide charge modification in SiO2 films (1985) (9)
Spin lattice relaxation in liquid and solid potassium (1970) (9)
Mobile charge, soft breakdown, and self-healing in hydrogen silsesquioxane based intermetal dielectric (2002) (8)
Theory of the Spin Relaxation of Conduction Electrons in Solid and Liquid Metals (1971) (8)
Effect of rapid thermal annealing on radiation hardening of MOS devices (1995) (8)
Shallow oxygen‐related donors in bonded and etchback silicon on insulator structures (1994) (8)
A study of Ar implantation induced defects in SiO2 (1983) (8)
The variation of 〈r4〉and 〈r6〉for 4ƒ electrons across the rare-earth series (1978) (8)
Oxygen vacancy annealing in H+ implanted SiO2 (1984) (8)
Effect of H on the paramagnetic resonance of Mn in Pd (1975) (7)
SiO2/Si Interfacial Degradation and the Role of Oxygen Interstitials (1996) (7)
On the crystalline electric field parameters for rare earths in Laves phase compounds (1974) (7)
The role of interface states in hydrogen-annealing-induced mobile proton generation at the Si–SiO2 interface (2000) (7)
Nuclear magnetic resonance of 139La in ferromagnetic Gd0.9La0.1Al2 (1978) (7)
Reactions and diffusion during annealing-induced H + generation in SOI buried oxides (1999) (7)
Observation of the paramagnetic resonance of Fe in Pd (1976) (7)
Anomalous concentration dependence of the hyperfine field in ordered Dy/sub 1-x/Gd/sub x/Al alloys (1980) (7)
Growth and characterization of GeO2 films obtained by plasma anodization of epitaxial Ge films (1999) (7)
Microscopic and macroscopic effect of substitution of Dy in DyAl2 by trivalent rare-earth ions (Sc, Y, La, Lu) (1979) (6)
Electrical resistivity evidence for the correlation between superconductivity and optical phonons in PdH (1977) (6)
Extraction of recoverable and permanent trapped charge resulting from negative bias temperature instability (2013) (6)
Temperature dependence of radiation induced defect creation in a-SiO2 (1988) (6)
NMR study of the exchange interactions and conduction band polarisation in ErFe2 (1981) (6)
A non-volatile MOSFET memory device based on mobile protons in SiO2 thin films (1999) (6)
Electrical bias stressing and radiation induced charge trapping in HfO2/SiO2 dielectric stacks (2007) (6)
Ultraviolet induced defect creation and annihilation in low‐temperature‐deposited SiO2 (1989) (6)
On the initial phase of native oxide formation on Si〈1 1 1〉 (1984) (6)
Spin Relaxation of Conduction Electrons in Liquid Metal Alloys. I. Theory (1971) (6)
Properties of tantalum pentoxide (Ta2O5) obtained by plasma assisted deposition using a TaF5 source (1999) (6)
Micropores and the role of ring structures at the Si–SiO2 interface (1986) (5)
Comparison of experimental and calculated TO and LO oxygen vibrational modes in thin SiO2 films (1995) (5)
Comparison of NTBI and irradiation induced interface states (2013) (5)
Origin of Radiation Induced Damage in Organic P3HT:PCBM Based Photocells (2010) (5)
Negative bias temperature instability and Fowler-Nordheim injection in silicon oxynitride insulators (2007) (5)
Pressure dependence of the crystal field in Pr singlet ground-state systems (1978) (5)
Radiation induced thermally stimulated luminescence and conductivity in SIMOX oxides (1995) (5)
Comment on “A model of hole trapping in SiO2 films on silicon” [J. Appl. Phys. 81, 6822 (1997)] (1998) (5)
Electric-field dependence of mobile proton-induced switching in protonated gate oxide field-effect transistors (2000) (5)
Modeling of the X-irradiation Response of the Carrier Relaxation Time in P3HT:PCBM Organic-Based Photocells (2012) (5)
Photoassisted oxidation of amorphous SiOx (1986) (5)
A simplified approach to estimating total trap contributions in negative bias temperature instability (2009) (5)
The hyperfine splitting of 167Er and 163Dy in Pd (1972) (5)
Nonvolatile memory and antifuse behavior in Pt∕a-TiO2∕Ag structures (2008) (5)
Indirect evidence for exchange modification of the conduction bands in RAl/sub 2/ compounds (1979) (4)
Tunneling discharge of positive trapped oxide charge in p-channel field effect transistors (2011) (4)
Optical phonons and density of states variations in Pd-Hx (1976) (4)
Influence of temperature on defect creation during plasma exposure of SiO2 films (1990) (4)
Transient measurements of carrier relaxation time and density in the P3HT:PCBM organic photovoltaic cell (2015) (4)
Localisation of 5d electrons in rare-earth metals (1973) (4)
Time dependent evolution of the carrier mobility in poly(3-hexylthiophene) based field effect transistors (2006) (4)
A resonance study of the paramagnetic behaviour of Fe in Pd (1977) (4)
The interpretation of the crystal field groundstate of Dy3+ in Pd (1973) (4)
Observation of anomalous transmission modes in nickel at microwave frequencies (1981) (4)
Low-Temperature Pecvd Si 3 N 4 Films for GaAs Encapsulation and Passivation. (1989) (4)
Infrared evidence for inhomogeneity in SiO2 films grown by plasma assisted oxidation of Si (1995) (4)
Effective molecular field at some rare earth ions in ordered intermetallic compounds Re1−xGdxAl2 (1980) (4)
Comparitive behavior of radiation and thermally generated protons in amorphous SiO2 (2001) (4)
Mechanism of magnetic coupling in rare-earth- Al 2 and rare-earth-Zn compounds (1978) (4)
Ion Implantation and Ionizing Radiation Effects in Thermal Oxides (1988) (4)
E1′ defect profiles in Ar implanted SiO2 (1983) (4)
Crystal-field and clustering effects in the specific heat of Dy in Pd (1975) (4)
Modifications of the atomic and electronic structure of quartz by high-energy ion irradiation (1993) (3)
Electronic traps in mixed Si1−xGexO2 films (2001) (3)
Characterization of interface traps in SOI material (1997) (3)
On the nature of “permanent” degradation in NBTI (2013) (3)
Anomalous drain voltage dependence in bias temperature instability measurements on high-κ field effect transistors (2011) (3)
Defect Creation and Photoablation in Stoichiometric and Sub-Stoichiometric SiO 2 (1985) (3)
Conduction properties of amorphous Ta 2 O 5 films prepared by plasma enhanced chemical vapour deposition (1996) (3)
Ionizing effects in vitreous silica and SOI SIMOX buried oxide by study of trapped charges and paramagnetic defect creation (1991) (3)
Characterization of plasma deposited Ta2O5 films using grazing incidence x-ray scattering (2000) (3)
Electrical and radiation assisted passivation of Ta2O5/Si interface (2004) (3)
Radiation sensitivity reduction in deuterium annealed Si–SiO2 structures (2002) (3)
Electron spin scattering by alkali metal impurities in liquid sodium (1971) (3)
Negative bias temperature instability threshold voltage shift turnaround in SiGe channel MOSFETs (2015) (3)
Ion Impacts and Nanostructures on Ge(111), In0.22Ga0.78As/GaAs(100) and Alpha Quartz Surfaces Observed by Atomic Force Microscopy (1996) (3)
Influence of bias stressing and irradiation on poly-three-hexylthiophene based field effect transistors (2006) (3)
Irradiation and Humidity Effects on the Leakage Current in SiO x ( CH 3 ) y -Based Intermetal Dielectric Films (2003) (3)
Bias stress voltage dependence for fast and slow traps resulting in negative bias temperature instability (2010) (3)
Growth Kinetics and Physical Characterization of Low Temperature Anodic Plasma Assisted Oxide of Titanium (2009) (3)
Temperature-Dependent Current Transport in Low-k Inorganic Dielectrics (2004) (3)
Slow trap charging and detrapping in the negative bias temperature instability in HfSiON dielectric based field effect transistors (2008) (3)
Defect enhanced ultraviolet etching of amorphous insulators (1986) (3)
Oxide modification due to high temperature processing of Si/SiO2/Si structures (1994) (2)
Radiation-induced charge trapping in low-k silsesquioxane-based intermetal dielectric films (2002) (2)
Determination through symmetry arguments of the various contributions to the self polarisation field at rare earth nuclei in cubic compounds (1979) (2)
Spin Relaxation of Conduction Electrons in Liquid Metal Alloys. II. Sodium-Potassium (1971) (2)
Motion of hydrogen ions in the proton memory (1999) (2)
Experimental Determination of the Electrostatic Contribution to the Crystalline Electric Fields in Non-Cubic Metals (1982) (2)
Conduction Electron Contributions to the Crystalline Electric Fields in Transition Metals (1974) (2)
Model Structure Factor for Solid Metals (1972) (2)
Influence of charge transfer on the crystal field in rare-earth chalcogenides and pnictides (1979) (2)
Correlation of mobile and fixed charge creation in protonated field-effect transistors (2000) (2)
Anisotropy in the paramagnetic resonance g-factor for manganese in zinc (1974) (2)
Measurement and Identification of Three Contributing Charge Terms in Negative Bias Temperature Instability (2013) (2)
Spin lattice relaxation of conduction electrons in liquid sodium (1969) (2)
Crystal field effects in the anomalous Hall coefficient (1976) (2)
Pressure dependence of the hyperfine field in Eu intermetallics (1982) (2)
Measurement and modeling of duty-cycle effects due to NBTI (2012) (2)
Separation of 5d and 4f contributions to the electric field gradient in heavy rare-earths (1973) (2)
On the Importance of Atomic Packing in Determining Dielectric Permittivities (2006) (2)
Low temperature, plasma assisted oxidation of amorphous Si (1997) (2)
Competing Charge Relaxation Mechanisms in HfSiON Insulator Field Effect Transistors (2010) (2)
Nonvolatile memory based on mobile protons (1998) (2)
Substrate/Oxide Interface Interaction in LaAlO3/Si Structures (2003) (2)
Effects of deposition conditions on the fluorine and hydrogen concentration in tantalum pentoxide (Ta2O5) thin films prepared by plasma enhanced chemical vapor deposition using a tantalum pentafluoride (TaF5) source (1999) (2)
On the spin-orbit scattering of conduction electrons in dilute non-magnetic alloys (1983) (1)
Pressure Effects on the Crystal Field in Rare-Earth Chalcogenides and Pnictides (1980) (1)
Modeling the Influence of Defects on the Electrical Response of Multi-Dielectric Gate-Stack Structures (2009) (1)
Near interface oxide degradation in high temperature annealed Si/SiO2/Si structures (1993) (1)
Real2’s: A Real and yet Unresolved Problem (1980) (1)
Physical and optical properties of room temperature microwave plasma anodically grown TiO2 (2009) (1)
Spin-spin interaction interpretation of results in Zn-Mn (1975) (1)
An electrical resistivity determination of the density of states variation in Pd-Ag alloys (1977) (1)
Reliability Implications of Defects in High Temperature Annealed Si/SiO 2 /Si Structures (1994) (1)
Spin Scattering Cross Sections for Ag, Au, and Gd in Al (1973) (1)
Coupled Atomistic-Continuum Calculations of Ionizing Radiation Tracks in Insulators (2010) (1)
Amorphous insulating thin films II : proceedings of Symposium A on Amorphous Insulating Thin Films II of the 1994 E-MRS Spring Conference, Strasbourg, France, May 24-27, 1994 (1995) (1)
Comparison of duty-cycle effects at room temperature in SiON and HfO2 gate PMOS FETS (2014) (1)
Negative bias temperature instability and relaxation in HfSiON gate stack field effect devices (2008) (1)
Influence of Ion Energy in Plasma Deposition of a-Sio 2 Films (1992) (1)
Radiation response of nanometric HfSiON/SiO2 gate stacks (2008) (1)
Infrared and electrical properties of amorphous sputtered „ LaxAl 1 À x ... 2 O 3 films (2003) (1)
Nuclear hyperfine fields in ferromagnetic Er1−xGdxAl2 compounds (1979) (1)
Grain boundary enhanced oxygen out-diffusion in annealed polycrystalline Si/SiO2/crystalline Si structures (1996) (1)
Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices (2013) (1)
Direct evidence for interface state annealing in the negative bias temperature instability response (2014) (1)
Paramagnetic Defect Analysis in UV Lamp Induced Chemical Vapour Deposited a-SiO 2 Films (1992) (1)
Evidence for Low Temperature UV Annealing of UVCVD, PECVD and Sog Based SiO 2 Films (1992) (1)
Comparative hot carrier induced degradation in 0,25 um MOSFETs with H or D passivated interfaces (1997) (1)
Influence of pressure on nitrogen incorporation in ultraviolet chemical vapor deposited SiO2 films (1993) (1)
Effect of radiation induced charging on gate-all-around NMOS devices (2016) (1)
Retention and switching kinetics of protonated gate field-effect transistors (2000) (1)
Mechanism for enhanced interfacial degradation in annealed SiO 2 /Si based devices (1995) (1)
Evidence for an isotope effect in the electrical transport of thermally generated mobile charges in amorphous SiO2 (2000) (1)
TheoreticalandExperimentalAnalysisof theSingle-CoilPulsed-NMRMethod for MeasuringFluidFlow (2006) (0)
Proceedings of the Franco-Italian Symposium on Structure and Defects in SiO2, Fundamentals and Applications - Agelonde, France - September 23-25 1996 - Preface (1997) (0)
Comparative hot carrier induced degradation in 0.25 {micro}m MOSFETs with H or D passivated interfaces (1997) (0)
High Dielectric Constant Oxides for Advanced Micro-Electronic Applications (2006) (0)
Evidence for Strongly Enhanced Paramagnetic Defect Creation in Low Temperature Pecvd SiO2 Films (1989) (0)
Dynamic Negative Bias Stress Instability Effects in Hafnium Silicon Oxynitride and Silicon Dioxide (2011) (0)
DIRECT OBSERVATION OF MOBILE PROTONS IN SI 02 THIN FILMS : POTENTIAL APPLICATION IN A NOVEL MEMORY DEVICE sm-- 97-OOLl 2 c 2 (2008) (0)
A study of proton generation in Si/SiO 2 /Si structures (1999) (0)
Tantalum oxide dielectric layer CVD (1997) (0)
Progress in Measuring and Modeling NBTI in Nitrided SiO2 Gate MOSFETs. (2011) (0)
Paramagnetic defect creation and charge trapping in SIMOX films at high and very high dose levels (1991) (0)
Interface state and recoverable components of NBTI determined by alternating stress measurements. (2012) (0)
Charge trapping/de-trapping in nitrided SiO2 dielectrics and its influence on device reliability. (2012) (0)
Electrical biasing and time dependent evolution of defects in poly(triphenylamine)-butane vinyl organic semiconductor devices (2008) (0)
Dependence of the Multi-Component Nature of Bias Temperature Instability in MOSFETs on Oxide and Device Type (2014) (0)
Retention and switching kinetics of protonated 1 gate field effect (0)
Improved morphology and bias stress study of a naphthalenetetracarboxylic diimide bottom contact field effect transistor (2009) (0)
Amorphous Insulating Thin Films II. Proceedings of Symposium Held in Strasbourg, France on May 24-27, 1994, (1995) (0)
Shallow oxygen-related donors in bonded and etchback silicon on insulator structures (1993) (0)
Tunneling discharge of positive trapped charge in p-channel field effect transistors (2011) (0)
Radiation Sensitivity of Unique Memory Devices (2002) (0)
Hydrostatic pressure dependence of the susceptibility in PrS (1978) (0)
Ionizing radiation induced parametric variations in P 3 HT : PCBM organic photovoltaic cells (2016) (0)
Dynamic NBTI effects in HfSiON. (2011) (0)
Hydrogen diffusion and chemistry during the annealing-induced generation of mobile protons in the oxide layer of Si/SiO{sub 2}/Si capacitors (1998) (0)
High Temperature Annealing of the Interface State Component of Negative-Bias Temperature Instability (NBTI) in MOSFET Devices (2013) (0)
Proceedings of a Symposium on the Physics and Technology of Amorphous SiO2 Held in Les Arcs, France on 29 June-3 July 1987 (1987) (0)
Effect of radiation induced substrate defects on microstrip gas chamber gain behaviour; part 2, experimental consequences (1998) (0)
Nuclear Magnetic Resonance on Rare-Earith Nuclei in Re-Fe2 Intermetallic Ccmpounds (1980) (0)
The electron paramagnetic resonance of manganese in Mo1−xGa4Mnx (1972) (0)
The Influence of Disorder on the Si2p XPS Lineshape at the Si — SiO2 Interface (1988) (0)
A Nonvolatile MOSFET Memory Device Based on Mobile Protons in the Gate Dielectric (1998) (0)
Electron induced depassivation of H and D terminated Si/SiO{sub 2} interfaces (1996) (0)
Low-temperature SF6 plasma etching of Si : experimental and simulation aspects (1991) (0)
Physical Characteristics of Very Low Temperature Anodic Oxides of Polycrystalline Si Films (1999) (0)
Extraction of recoverable and permanent positive charge trapping resulting from negative bias temperature instability in p-channel field effect transistors . (2012) (0)
Si1−xGex Oxidation by Plasma Assisted Processing: Oxide Uniformity and Electrical Properties (1999) (0)
A comment on the hyperfine field in ferromagnetic alloys (1977) (0)
Nonvolatile field effect transistors based on protons and Si/SiO{sub 2}Si structures (1997) (0)
A QUANTUM MECHANICAL INVESTIGATION OF POSITIVELY CHARGED DEFECTS IN Si02 THIN FILM DEVICES (2008) (0)

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Roderick A. B. Devine is affiliated with the following schools:

Université de Montréal
Johns Hopkins University

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