Ralph Andre Logan

Ralph Andre Logan's AcademicInfluence.com Rankings

Ralph Andre Logan

Engineering

#2054

World Rank

#2883

Historical Rank

Photonics

#14

World Rank

#14

Historical Rank

Applied Physics

#229

World Rank

#238

Historical Rank

Electrical Engineering

#319

World Rank

#361

Historical Rank

engineering Degrees

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Engineering

Ralph Andre Logan's Degrees

PhD Electrical Engineering Stanford University
Masters Electrical Engineering Stanford University
Bachelors Electrical Engineering Stanford University

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Ralph Andre Logan's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Whispering-gallery mode microdisk lasers (1992) (1313)
Optical properties of AlxGa1−x As (1986) (713)
Trapping characteristics and a donor-complex ( DX ) model for the persistent-photoconductivity trapping center in Te-doped Al x Ga 1 − x As (1979) (630)
Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors (1977) (494)
Observation of the Two-Dimensional Plasmon in Silicon Inversion Layers (1977) (469)
Ionization Rates of Holes and Electrons in Silicon (1964) (455)
Toward quantum well wires: Fabrication and optical properties (1982) (360)
Spectral dependence of the change in refractive index due to carrier injection in GaAs lasers (1981) (309)
A study of deep levels in GaAs by capacitance spectroscopy (1975) (303)
Catastrophic damage of AlxGa1−xAs double‐heterostructure laser material (1979) (290)
Excess Tunnel Current in Silicon Esaki Junctions (1961) (281)
The effect of surface recombination on current in AlxGa1−xAs heterojunctions (1978) (253)
Threshold characteristics of semiconductor microdisk lasers (1993) (237)
High‐speed direct single‐frequency modulation with large tuning rate and frequency excursion in cleaved‐coupled‐cavity semiconductor lasers (1983) (234)
Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers (1980) (234)
X‐ray diffraction study of interdiffusion and growth in (GaAs)n(AlAs)m multilayers (1980) (231)
Subpicosecond monolithic colliding‐pulse mode‐locked multiple quantum well lasers (1991) (205)
Effect of Heat Treatment upon the Electrical Properties of Silicon Crystals (1957) (185)
GexSi1−x strained‐layer superlattice waveguide photodetectors operating near 1.3 μm (1986) (183)
Directional light coupling from microdisk lasers (1993) (182)
Longitudinal mode self‐stabilization in semiconductor lasers (1982) (166)
Far infrared emission from plasma oscillations of Si inversion layers (1980) (161)
A systems perspective on digital interconnection technology (1992) (149)
GaAs‐AlxGa1‐xAs injection lasers with distributed Bragg reflectors (1975) (146)
Optical waveguides in GaAs–AlGaAs epitaxial layers (1973) (143)
The effect of intervalence band absorption on the thermal behavior of InGaAsP lasers (1983) (140)
Identification of the defect state associated with a gallium vacancy in GaAs and Al x Ga 1 − x As (1977) (135)
16 Gbit/s all-optical demultiplexing using four-wave mixing (1991) (130)
GaAs/AlGaAs multiquantum well infrared detector arrays using etched gratings (1989) (129)
Luminescence of Zn‐ and Cd‐doped GaN (1972) (129)
Mode-locked hybrid soliton pulse source with extremely wide operating frequency range (1993) (118)
Subpicosecond pulses from passively mode‐locked GaAs buried optical guide semiconductor lasers (1981) (117)
Interface stress of AlxGa1−xAs–GaAs layer structures (1973) (115)
Picosecond nonequilibrium carrier transport in GaAs (1981) (111)
Enhanced spectral power density and reduced linewidth at 1.3 μm in an InGaAsP quantum well resonant‐cavity light‐emitting diode (1992) (106)
Efficient green electroluminescent junctions in GaP (1971) (100)
25 GHz bandwidth 1.55 mu m GaInAsP p-doped strained multiquantum-well lasers (1992) (100)
Femtosecond carrier dynamics in GaAs (1987) (99)
Heteroepitaxial Thermal Gradient Solution Growth of GaN (1972) (96)
Frequency response subtraction for simple measurement of intrinsic laser dynamic properties (1992) (96)
Internal Field Emission at Narrow Silicon and Germanium p-n Junctions (1960) (94)
EFFICIENT GREEN ELECTROLUMINESCENCE IN NITROGEN‐DOPED GaP p‐n JUNCTIONS (1968) (93)
Properties of Heavily Doped n‐Type Germanium (1961) (93)
Phonon-Assisted Tunneling in Silicon and Germanium Esaki Junctions (1962) (92)
Transform‐limited 1.4 ps optical pulses from a monolithic colliding‐pulse mode‐locked quantum well laser (1990) (91)
The Equilibrium Pressure of N2 over GaN (1972) (90)
Reflection noise in index-guided InGaAsP lasers (1986) (88)
Thermally Induced Acceptors in Germanium (1956) (86)
Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates (1987) (84)
Room temperature operation of submicrometre radius disk laser (1993) (83)
Impurity Effects upon Mobility in Silicon (1960) (82)
Nonradiative Recombination at Dislocations in III-V Compound Semiconductors (1980) (79)
68.3 km transmission with 1.37 Tbit km/s capacity using wavelength division multiplexing of ten single-frequency lasers at 1.5 μm (1985) (79)
Stable single mode hybrid laser with high power and narrow linewidth (1994) (78)
The Anodic Oxidation of GaAs in Aqueous H 2 O 2 Solution (1973) (76)
Chirp-free transmission over 82.5 km of single mode fibers at 2 Gbit/s with injection locked DFB semiconductor lasers (1985) (75)
Determination of the refractive index of InGaAsP epitaxial layers by mode line luminescence spectroscopy (1985) (75)
Analysis of gain in determining T/sub 0/ in 1.3 /spl mu/m semiconductor lasers (1995) (75)
Carrier capture times in 1.5 μm multiple quantum well optical amplifiers (1992) (73)
High temperature characteristics of InGaAsP/InP laser structures (1993) (73)
Anisotropic Mobilities in Plastically Deformed Germanium (1959) (73)
Observation of destructive interference in the radiation loss of second-order distributed feedback lasers (1985) (73)
InGaAs/InP quantum well lasers with sub-mA threshold current (1990) (72)
Avalanche Breakdown in Gallium Arsenide p-n Junctions (1962) (72)
Pressure and compositional dependences of the hall coefficient in Al x Ga 1-x As and their significance (1980) (68)
GaAs Double Heterostructure Lasers Fabricated by Wet Chemical Etching (1976) (66)
64 Gb/s all-optical demultiplexing with the nonlinear optical-loop mirror (1992) (65)
Strained InGaAs/InP quantum well lasers (1990) (65)
Observation of enhanced single longitudinal mode operation in 1.5‐μm GaInAsP erbium‐doped semiconductor injection lasers (1986) (64)
Novel technique for determining internal loss of individual semiconductor lasers (1992) (63)
Charge Multiplication in GaP p‐n Junctions (1962) (62)
Long-wavelength InGaAsP/InP distributed feedback lasers incorporating gain-coupled mechanism (1992) (61)
Thermal stability of InGaAs/InP quantum well structures grown by gas source molecular beam epitaxy (1987) (61)
Electrical and Electroluminescent Properties of Gallium Phosphide Diffused p − n Junctions (1966) (60)
Effect of Degenerate Semiconductor Band Structure on Current-Voltage Characteristics of Silicon Tunnel Diodes (1963) (59)
Ultra-low threshold, graded-index waveguide, separate confinement, CW buried-heterostructure lasers (1982) (59)
Nonradiative recombination at dislocations in III–V compound semiconductors (1980) (58)
Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy (1989) (57)
Generation of subpicosecond pulses from an actively mode locked GaAs laser in an external ring cavity (1981) (57)
Electron-hole plasma in direct-gap Ga 1 − x Al x As and k -selection rule (1984) (55)
GaAs-Al x Ga 1-x As strip buried heterostructure lasers (1979) (55)
High-Power Fundamental-Transverse-Mode Strip Buried Heterostructure Lasers with Linear Light-Current Characteristics (1978) (54)
Minority carrier lifetime and luminescence efficiency of 1.3 µm InGaAsP-InP double heterostructure layers (1983) (54)
GaAs integrated optical circuits by wet chemical etching (1979) (54)
Pulsations and absorbing defects in (Al,Ga)As injection lasers (1979) (53)
Packaged 1.55 mu m DFB laser with 25 GHz modulation bandwidth (1994) (51)
32 Gb/s optical soliton data transmission over 90 km (1992) (51)
Femtosecond dynamics of highly excited carriers in AlxGa1−xAs (1987) (51)
High frequency conductivity in silicon inversion layers: Drude relaxation, 2D plasmons and minigaps in a surface superlattice (1978) (50)
Phonon Spectra of Ge-Si Alloys (1964) (50)
38.5 km error free transmission at 10 Gbit/s in standard fibre using a low chirp, spectrally filtered, directly modulated 1.55 /spl mu/m DFB laser (1997) (49)
Laser oscillation with optically pumped very thin GaAs‐AlxGa1−xAs multilayer structures and conventional double heterostructures (1976) (49)
Dynamics of intrinsic and nitrogen-induced exciton emission in indirect-gap Ga 1 − x Al x As (1983) (49)
Taper couplers for GaAs−AlxGa1−xAs waveguide layers produced by liquid phase and molecular beam epitaxy (1975) (48)
Radiative and nonradiative lifetimes in n-type and p-type 1.6 μm InGaAs (1984) (46)
High power output 1.48–1.51 μm continuously graded index separate confinement strained quantum well lasers (1990) (45)
Linewidth enhancement factor for InGaAs/InP strained quantum well lasers (1990) (44)
Generation of short optical pulses in semiconductor lasers by combined DC and microwave current injection (1982) (44)
Electro‐optical light modulation in InGaAsP/InP double heterostructure diodes (1983) (44)
Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substrates (1987) (44)
Absorption, emission, and gain spectra of 1.3 µm InGaAsP quaternary lasers (1983) (42)
Effect of strain on the resonant frequency and damping factor in InGaAs/InP multiple quantum well lasers (1991) (41)
Deep‐level distributions near p‐n junctions in LPE GaAs (1976) (41)
Observation of two‐dimensional electrons in LPE‐grown GaAs‐AlxGa1−xAs heterojunctions (1979) (41)
Survey of defect‐mediated recombination lifetimes in GaAs epilayers grown by different methods (1987) (41)
Semiconductor distributed feedback lasers with quantum well or superlattice gratings for index or gain‐coupled optical feedback (1992) (40)
Low-threshold high-efficiency AlGaAs-GaAs double-heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition (1987) (40)
Temperature dependence of long wavelength semiconductor lasers (1992) (40)
Dispersion of the group velocity refractive index in GaAs double heterostructure lasers (1983) (39)
Single longitudinal mode operation of Er‐doped 1.5‐μm InGaAsP lasers (1987) (39)
Holographic photoelectrochemical etching of diffraction gratings in n‐InP and n‐GaInAsP for distributed feedback lasers (1985) (39)
Hybrid soliton pulse source with fibre external cavity and Bragg reflector (1992) (38)
GaAs‐AlGaAs double heterostructure lasers with taper‐coupled passive waveguides (1975) (38)
GaAs/GaInP multiquantum well long‐wavelength infrared detector using bound‐to‐continuum state absorption (1990) (38)
Stable single-longitudinal-mode operation under high-speed direct modulation in cleaved-coupled-cavity GaInAsP semiconductor lasers (1983) (38)
P‐N JUNCTIONS IN GaP WITH EXTERNAL ELECTROLUMINESCENCE EFFICIENCY ∼2% AT 25°C (1967) (37)
Effect of surface passivation with SiN on the electrical properties of InP/InGaAs heterojunction bipolar transistors (1993) (37)
On the temperature sensitivity of semiconductor lasers (1992) (37)
1.55‐μm InGaAsP distributed feedback vapor phase transported buried heterostructure lasers (1985) (36)
Single mode operation of buried heterostructure lasers by loss stabilization (1981) (36)
Conductance Anomalies in Semiconductor Tunnel Diodes (1964) (36)
High performance of Fe:InP/InGaAs metal/semiconductor/metal photodetectors grown by metalorganic vapor phase epitaxy (1990) (36)
Diffusion of Oxygen in Silicon (1957) (35)
Rib waveguide switches with MOS electrooptic control for monolithic integrated optics in GaAs-Al(x)Ga(1-x)As. (1978) (35)
Strained multiple quantum well lasers emitting at 1.3 μm grown by low‐pressure metalorganic vapor phase epitaxy (1991) (35)
Three‐dimensional light guides in single‐crystal GaAs–Alx Ga1 − xAs (1973) (35)
High frequency buried heterostructure 1.5 μm GaInAsP/InP lasers, grown entirely by metalorganic vapour phase epitaxy in two epitaxial growth steps (1988) (34)
A densely packed monolithic linear array of GaAs‐AlxGa1−xAs strip buried heterostructure laser (1979) (34)
Low threshold and high power output 1.5 μm InGaAs/InGaAsP separate confinement multiple quantum well laser grown by chemical beam epitaxy (1990) (34)
Observation of Stark Splitting of Energy Bands by Means of Tunnelling Transitions (1960) (34)
1.5 μm wavelength GaInAsP C3 lasers: single-frequency operation and wideband frequency tuning (1983) (34)
Phase‐matched second‐harmonic generation in GaAs optical waveguides by focused laser beams (1974) (34)
Electron Mobilities and Tunneling Currents in Silicon (1961) (33)
Concentration dependent Zn diffusion in InP during metalorganic vapor phase epitaxy (1995) (33)
Phase−matched second harmonic generation in a liquid−filled waveguide (1975) (33)
High temperature operation of lattice matched and strained InGaAs-InP quantum well lasers (1991) (33)
Monolithically integrated AlGaAs double heterostructure optical components (1974) (33)
Integrated GaAs‐AlxGa1−xAs injection lasers and detectors with etched reflectors (1977) (32)
Electroluminescent recombination near the energy gap in GaP diodes (1963) (32)
MICROWAVE INTENSITY AND FREQUENCY MODULATION OF HETEROEPITAXIAL-RIDGE-OVERGROWN DISTRIBUTED FEEDBACK LASERS. (1985) (32)
Transmission properties of rib waveguides formed by anodization of epitaxial GaAs on Alx Ga1−x As layers (1974) (31)
Anisotropic reactive ion etching of InP in methane/hyclrogen based plasmas (1991) (31)
AlxGa1-xAs double-heterostructure rib-waveguide injection laser (1975) (30)
High-detectivity InAs 0.85 Sb 0.15 /InAs infra-red (1.8-4.8 μm) detectors (1986) (30)
Pulsating output of separate confinement buried optical guide lasers due to the deliberate introduction of saturable loss (1981) (30)
Origin of n≃2 injection current in AlxGa1−xAs heterojunctions (1977) (30)
Broad-band tunable picosecond semiconductor lasers (1981) (30)
EFFECTS OF γ‐IRRADIATION UPON LIFETIME AND LUMINESCENCE OF GaP DIODES (1964) (30)
Optical beam characteristics of Schottky barrier confined arrays of phase-coupled multiquantum well GaAs lasers (1984) (30)
Strained quaternary quantum well lasers for high temperature operation (1993) (30)
Bit-error-rate investigation of two-channel soliton propagation over more than 10000 km (1991) (30)
Solubility and Electrical Behavior of Zinc, Sulfur, Selenium, and Tellurium in Gallium Phosphide (1965) (30)
Symmetry of donor-related centers responsible for persistent photoconductivity in Al x Ga 1-x As (1979) (30)
Effect of barrier recombination on the high temperature performance of quaternary multiquantum well lasers (1995) (30)
Restoration of Resistivity and Lifetime in Heat Treated Germanium (1955) (29)
Integrated electro‐optic intracavity frequency modulation of double‐heterostructure injection laser (1975) (29)
Integrated GaAs-Al x Ga 1-x As double-heterostructure laser with independently controlled optical output divergence (1975) (29)
Control of lasing wavelength in distributed feedback lasers by angling the active stripe with respect to the grating (1993) (29)
Short-coupled-cavity (SCC) InGaAsP injection lasers for CW and high-speed single-longitudinal-mode operation (1983) (29)
InGaAs-InGaAsP buried heterostructure lasers operating at 2.0 /spl mu/m (1995) (28)
Effect of thermionic electron emission from the active layer on the internal quantum efficiency of InGaAsP lasers operating at 1.3 /spl mu/m (1994) (28)
THE SIGN OF THE QUADRUPOLE INTERACTION ENERGY IN DIATOMIC MOLECULES (1952) (28)
Packaged hybrid soliton pulse source results 70 terabit.km/sec soliton transmission (1995) (28)
InGaAs/InP graded-index quantum well lasers with nearly ideal static characteristics (1990) (28)
Vertical cavity surface emitting laser diodes (1990) (28)
A search for interface states in an LPE GaAs/AlxGa1−xAs heterojunction (1977) (28)
Integrated DFB-DBR laser modulator grown by selective area metalorganic vapor phase epitaxy growth technique (1994) (27)
130 KM TRANSMISSION EXPERIMENT AT 2 GB/S USING SILICA-CORE FIBER AND A VAPOR PHASE TRANSPORTED DFB LASER. (1984) (27)
Observation of multiple wavelength soliton collisions in optical systems with fiber amplifiers (1990) (27)
Loss measurements in GaAs and AlxGa1−xAs dielectric waveguides between 1.1 eV and the energy gap (1976) (27)
Dynamic and static response of multielectrode lasers (1990) (27)
Effects of strain in multiple quantum well distributed feedback lasers (1990) (26)
Gain characteristics of 1.55-μm high-speed multiple-quantum-well lasers (1995) (26)
InGaAsP/InP (1.3 μm) buried-crescent lasers with separate optical confinement (1982) (26)
Precipitation of Copper in Germanium (1955) (26)
GaP Surface‐Barrier Diodes (1963) (26)
Measurement of spectrum, bias dependence, and intensity of spontaneous emission in GaAs lasers (1981) (26)
Density Change in Silicon upon Melting (1959) (25)
Growth of 1.3 μm InAsP/InGaAsP laser structures by gas source molecular beam epitaxy (1995) (25)
Beam deflection and amplitude modulation of 10.6‐μm guided waves by free‐carrier injection in GaAs–AlGaAs heterostructures (1973) (25)
Electroluminescence in GaAsxP1−x, InxGa1−xP, and AlxGa1−xP Junctions with x≲0.01 (1971) (25)
External-cavity InGaAs/InP graded index multiquantum well laser with a 200 nm tuning range (1990) (25)
Low‐current‐threshold strip‐buried‐heterostructure lasers with self‐aligned current injection stripes (1979) (25)
A closely spaced (50 μm) array of 16 individually addressable buried heterostructure GaAs lasers (1982) (25)
Analysis of T0 in 1.3 μm multi‐quantum‐well and bulk active lasers (1995) (24)
Solid Solubilities of Antimony, Arsenic, and Bismuth in Germanium from a Saturation Diffusion Experiment (1962) (24)
GaAs‐AlxGa1−xAs strip‐buried‐heterostructure lasers with lateral‐evanescent‐field distributed feedback (1979) (24)
High-speed InGaAsP/InP multiple-quantum-well laser (1992) (24)
Direct determination of symmetry of Cr ions in semi‐insulating GaAs substrates through anisotropic ballistic‐phonon propagation and attenuation (1978) (24)
Nonradiative ’’large dark spots’’ in AlxGa1−xAs‐GaAs heterostructures (1977) (23)
Optoelectronic logic operations by cleaved-coupled-cavity semiconductor lasers (1983) (23)
Roentgenographic Interpretation of Certain Condyle and Menton Movements (1941) (23)
Direct observation of phonons generated during nonradiative capture in GaAs p-n junctions (1978) (23)
High‐speed distributed feedback lasers grown by hydride epitaxy (1988) (23)
Regrowth of Semi‐Insulating InP around Etched Mesas Using Hydride Vapor Phase Epitaxy (1990) (23)
Multielectrode quantum well laser for digital switching (1990) (22)
Thermally Induced Acceptors in Single Crystal Germanium (1953) (22)
Superfast 1.55 mu m DFB lasers (1993) (22)
Substrate orientation effects on dopant incorporation in InP grown by metalorganic chemical vapor deposition (1993) (22)
Recombination-Enhanced Interactions between Point Defects and Dislocation Climb in Semiconductors (1979) (22)
Catastrophic degradation lines at the facet of InGaAsP/InP lasers investigated by transmission electron microscopy (1995) (22)
Bit-error-rate saturation due to mode-partition noise induced by optical feedback in 1.5-µm single longitudinal-mode C 3 and DFB semiconductor lasers (1985) (22)
Doping of InP and GaInAs with S during metalorganic vapor‐phase epitaxy (1989) (22)
Electrooptic Polarization Modulation in Multielectrode AlxGa1-xAs Rib Waveguides (1982) (21)
Spectral bistability in coupled cavity semiconductor lasers (1984) (21)
Measurements of the polarization dependence of the gain of strained multiple quantum well InGaAs-InP lasers (1991) (21)
Single‐longitudinal mode performance characteristics of cleaved‐coupled‐cavity lasers (1983) (21)
Photocurrent response of GaInAs/InP multiple quantum well detectors grown by gas source molecular beam epitaxy (1985) (21)
Characteristics of rib waveguides in AlGaAs (1979) (21)
Measured spectral linewidth of single-frequency 1.3 and 1.5 μm injection lasers (1984) (21)
Indirect-Band-Gap Super-Radiant Laser in GaP Containing Isoelectronic Traps (1971) (21)
Schottky barrier restricted arrays of phase‐coupled AlGaAs quantum well lasers (1984) (21)
Pressure coefficient of the direct band gap of Al x Ga 1-x As from optical absorption measurements (1979) (21)
Observation of collision induced temporary soliton carrier frequency shifts in ultra-long fiber transmission systems (1991) (21)
Saturable optical absorption of the deep Te-complex center in Al 0.4 Ga 0.6 As (1979) (21)
Saturable absorption in intracavity loss modulated quantum well lasers (1991) (20)
Lateral-current confinement in a GaAs planar stripe-geometry and channeled substrate buried DH laser using reverse-biased p-n junctions (1978) (20)
Fabrication of InGaAsP/InP buried heterostructure laser using reactive ion etching and metalorganic chemical vapor deposition (1993) (20)
Zinc incorporation into InP grown by atmospheric pressure metalorganic vapor phase epitaxy (1996) (20)
GaAs‐AlxGa1−xAs buried‐heterostructure lasers grown by molecular beam epitaxy with Al0.65Ga0.35As (Ge‐doped) liquid phase epitaxy overgrown layer for current injection confinement (1980) (20)
Optical properties of semiconductor lasers with hydrostatic pressure (1993) (19)
Index‐guided arrays of Schottky barrier confined lasers (1985) (19)
Channeling photodiode: A new versatile interdigitated p‐n junction photodetector (1982) (19)
Liquid phase epitaxial growth on {111}In planes of InP (1983) (19)
Reproducible growth of low-threshold single and multiple quantum well InGaAs/InP lasers by a novel interlayer growth technique (1989) (18)
Soliton collision interaction force dependence on wavelength separation in fibre amplifier based systems (1990) (18)
4 Gb/s soliton data transmission over 136 km using erbium doped fiber amplifiers (1990) (18)
Electron-hole plasma in photoexcited indirect-gapAlxGa1−xAs (1980) (18)
Effect of mesa shape on the planarity of InP regrowths performed by atmospheric pressure and low pressure selective metalorganic vapor phase epitaxy (1991) (18)
Internal Field Emission at Narrow p-n Junctions in Indium Antimonide (1960) (18)
λ≊1.5 μm InGaAsP ridge lasers grown by gas source molecular beam epitaxy (1984) (18)
1.55‐μm InGaAsP ridge waveguide distributed feedback laser (1984) (18)
Electron spin relaxation and photoluminescence of Zn-doped GaAs (1981) (17)
Buried‐heterostructure lasers fabricated by in situ processing techniques (1990) (17)
Multicolor single-wavelength sources generated by a monolithic colliding pulse mode-locked quantum well laser (1991) (17)
InGaAs/InGaAsP Integrated Tunable Detector Grown By Chemical Beam Epitaxy (1992) (17)
Formation of optically induced catastrophic degradation lines in InGaAsP epilayers (1984) (17)
High output power single longitudinal mode graded index separate confinement multiple quantum well InGaAs/InP distributed feedback (GRIN SCH MQW DFB) lasers (1990) (16)
Observation of growth patterns during atmospheric pressure metalorganic vapor phase epitaxy regrowth of InP around etched mesas (1993) (16)
Fabrication and performance characteristics of 1.55‐μm InGaAsP multiquantum well ridge guide lasers (1985) (16)
Wavelength switching in InGaAs/InP quantum well lasers (1990) (16)
Laser oscillation at 3-4 µm optically pumped InAs 1-x-y Sb x P y (1985) (16)
Heteroepitaxial ridge‐overgrown distributed feedback laser at 1.5 μm (1984) (16)
Laser cathode ray tube operation at room temperature (1984) (16)
Alignment-relaxed 1.55 mu m multiquantum well lasers fabricated using standard buried heterostructure laser processes (1995) (16)
The cw electro‐optical properties of (Al,Ga)As modified‐strip buried‐heterostructure lasers (1980) (16)
A modified metalorganic chemical vapor deposition chemistry for improved selective area regrowth (1993) (16)
Investigations of laser array for parallel optical data link applications (1992) (16)
Characteristics of GaAs/AlGaAs heterostructures grown by liquid-phase epitaxy on molecular-beam-coated GaAs on Si (1988) (15)
Pulse generation by harmonic modulation of an integrated DBR laser-modulator (1994) (15)
InGaAsP(1.3 μm)/InP vertical‐cavity surface‐emitting laser grown by metalorganic vapor phase epitaxy (1990) (15)
Structure and composition of interfaces between Ga1−xAlxAs and GaAs layers grown by liquid phase epitaxy (LPE) (1980) (15)
Optically integrated coherently coupled AlxGa1−xAs lasers (1983) (15)
High-quantum-efficiency low-threshold microcleaved alxga1-xas lasers (1982) (15)
Long-wavelength InGaAsP/InP multiquantum well distributed feedback and distributed Bragg reflector lasers grown by chemical beam epitaxy (1994) (14)
Tunable monolithic colliding pulse mode-locked quantum-well lasers (1991) (14)
High performance InP/InGaAs heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy (1989) (14)
Quaternary 1.5 μm (InGaAsP/InP) buried crescent lasers with separate optical confinement (1983) (14)
All‐gaseous doping during chemical‐beam epitaxial growth of InGaAs/InGaAsP multi‐quantum‐well lasers (1991) (14)
Effect of Landau Levels Upon Tunnel Currents in Indium Antimonide (1960) (14)
Gain nonlinearity and its temperature dependence in bulk- and quantum-well quaternary lasers (1995) (14)
Interdigitated pn junction device with novel capacitance/voltage characteristic, ultralow capacitance and low punch-through voltage (1982) (14)
Reduced temperature dependence of threshold current by broadband enhanced feedback: A new approach and demonstration (1992) (13)
Stimulated emission spectra of AlxGa1−xAs near the direct‐indirect gap crossover composition (1986) (13)
Reproducible growth of narrow linewidth multiple quantum well graded index separate confinement distributed feedback (MQW-GRIN-SCH-DFB) lasers by MOVPE (1991) (13)
TEMPERATURE DEPENDENCE OF THE RESISTANCE IN THE PT/TI NONALLOYED OHMIC CONTACTS TO P-INAS INDUCED BY RAPID THERMAL PROCESSING (1990) (13)
Low-chirp integrated EA-modulator/DFB laser grown by selective-area MOVPE (1994) (13)
High Efficiency, Narrow Spectrum Resonant Cavity Light Emitting Diodes (1995) (13)
Hybrid soliton pulse source using a silica waveguide external cavity and Bragg reflector (1991) (13)
Single heterostructure AlxGa1−xAs phase modulator with SnO2‐doped In2O3 cladding layer (1976) (13)
Doping effects on rake‐line formation in LPE growth of AlxGa1−xAs DH lasers (1979) (13)
Elastically enhanced nonradiative recombination at AlxGa1−xAs‐GaAs heterointerface (1976) (13)
Electron Bombardment Damage in Silicon Esaki Diodes (1961) (13)
Modeling of gain for InGaAsP-based lasers (1995) (13)
Transmission experiment at 3 Gbit/s with close-spaced wavelength-division-multiplexed single-frequency lasers at 1.5 μm (1984) (13)
Ultra-high speed demultiplexing with the nonlinear optical loop mirror (1992) (13)
Optical waveguides in GaAs-AlGaAs epitaxial layers (1973) (13)
Misfit dislocation microstructure and kinetics for InxGa1−xAs/InP(100) and (110) interfaces under tensile and compressive stress (1993) (13)
Relative intensity noise reduction in InGaAs/InP multiple quantum well lasers with low nonlinear damping (1991) (12)
Voltage-controlled Q switching of InGaAs/InP single quantum well lasers (1989) (12)
Ridge waveguide distributed feedback lasers with electron beam defined gratings (1985) (12)
InGaAsP/InGaAs heterojunction p-i-n detectors with low dark current and small capacitance for 1.3-1.6 μm fibre optic systems (1980) (12)
GaInAsP/InP buried heterostructure formation by liquid phase epitaxy (1984) (12)
Infrared Studies of Birefringence in Silicon (1959) (12)
Effect of interface recombination at AlxGa1-xAs p n junction perimeters on photoluminescence and current (1978) (12)
Influence of {111} regrowth sidewall interfaces on the performance of 1.54 μm InGaAsP/InP etched‐mesa‐buried‐heterostructure lasers (1987) (12)
Fabrication and performance characteristics of InGaAsP ridge-guide distributed-feedback multiquantum-well lasers (1985) (12)
Channeled‐substrate‐planar‐structure semiconductor lasers with lateral‐evanescent‐field distributed feedback (1979) (12)
Variable hue GaP diodes (1971) (12)
GaAs double-heterostructure photodetectors (1977) (12)
Optical demultiplexing at 6 Gb/s using a semiconductor laser amplifier as an optical gate (1991) (12)
The heteroepitaxial ridge-overgrown distributed feedback laser (1985) (12)
The role of osteoblasts and osteoclasts in osteogenesis (1942) (12)
Rate equation model of high‐temperature performance of InGaAsP quantum well lasers (1995) (11)
1.3 μm InGaAsP/InP multiquantum well buried heterostructure lasers grown by chemical‐beam epitaxy (1991) (11)
Pulsations in AlxGa1−xAs buried heterostructure lasers caused by the heating of defects (1981) (11)
Enhanced modulation bandwidth of strained multiple quantum well lasers (1992) (11)
Single mode GaAs-AlxGa1-xAs rib waveguide switches (1978) (11)
Thermal Effects on Lifetime of Minority Carriers in Germanium (1954) (11)
Hole induced four wave mixing and intervalence band relaxation times in p-GaAs and p-Ge (1985) (11)
Substitutional, interstitial, and neutral zinc incorporation into InP grown by atmospheric pressure metalorganic vapor phase epitaxy (1996) (10)
High-speed, low chirp, directly modulated 1.55-/spl mu/m DFB laser sources for 10 Gbit/s local distribution (1996) (10)
A new high‐power, narrow‐beam transverse‐mode stabilized semiconductor laser at 1.5 μm: the heteroepitaxial ridge‐overgrown laser (1984) (10)
RADIATIVE RECOMBINATION IN GaP p‐n AND TUNNEL JUNCTIONS (1965) (10)
Electrical and structural properties of Pt/Ti/p+–InAs ohmic contacts (1990) (10)
DFB lasers with monolithically integrated passive waveguide (1992) (10)
THE ANODIC OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION (1973) (10)
Atomic ordering in InGaAsP and InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition (1992) (10)
Effect of Oxygen on Etch‐Pit Formation in Silicon (1957) (10)
Lateral current confinement by reverse‐biased junctions in GaAs‐AlxGa1−xAs DH lasers (1977) (10)
InGaAs/InP distributed feedback quantum well lasers (1990) (10)
Mode‐locked semiconductor lasers with gateable output and electrically controllable optical absorber (1983) (10)
Transient single‐longitudinal mode stabilization in double active layer GaInAsP/InP laser under high‐bit rate modulation (1983) (10)
(AlGa)As strip buried-heterostructure lasers prepared by hybrid crystal growth (1982) (9)
Exciton-phonon coupling in indirect AlxGa1−xAs (1979) (9)
Strip buried heterostructure lasers with passive distributed Bragg reflectors (1979) (9)
Demonstration of multilevel multichannel optical frequency shift keying (FSK) with cleaved-coupled-cavity (C3) semiconductor lasers (1983) (9)
Enhanced characteristics of InGaAsP buried quaternary lasers with pressures up to 1.5 GPa (1993) (9)
Control of lasing wavelength in distributed feedback lasers by angling the active stripe with respect to the grating (1993) (9)
GaInAs/InP large bandwidth (> 2 GHz) PIN detectors (1983) (9)
The H.F.S. Anomaly of the Potassium Isotopes (1950) (9)
Integrated arrays of 1.3‐μm buried‐crescent lasers (1983) (9)
Hybrid growth of InGaAsP double‐channel planar buried heterostructure lasers (1985) (9)
Growth of InP on etched grooves using atmospheric pressure metalorganic vapor phase epitaxy (1994) (9)
Monolithic integration of InGaAsP/InP lasers and heterostructure bipolar transistors by selective area epitaxy (1993) (8)
p‐n Junctions in Compensated Solution‐Grown GaP (1967) (8)
Linewidth enhancement factor and high temperature performance of 1.48 mu m strained InGaAs-InGaAsP multiquantum well laser (1991) (8)
Growth and characterization of continuously graded index separate confinement heterostructure (GRIN-SCH) InGaAs-InP long wavelength strained layer quantum-well lasers by metalorganic vapor phase epitaxy (1990) (8)
Microplasma characteristics in InP‐In0.53Ga0.47As long wavelength avalanche photodiodes (1985) (8)
Fe Incorporation and Precipitation in Semi‐Insulating Fe‐Doped InP Grown by Metalorganic Chemical Vapor Deposition (1994) (8)
High-power (AlGa)As strip-buried heterostructure lasers (1985) (8)
Transmission with 1.37-Tbit • km/sec capacity using ten wavelength division multiplexed lasers at 1.5 µm (1985) (8)
Solid Solubility and Amphoteric Behavior of Tin in Solution Grown Gallium Phosphide (1964) (8)
Electro‐optic frequency‐ and polarization‐modulated injection laser (1980) (8)
Insulating gate InGaAs/InP field‐effect transistors (1988) (8)
An investigation of the frequency stability and temperature characteristics of 1.5 µm coupled-cavity injection lasers (1984) (8)
1.5‐μm GaInAsP planar buried heterostructure lasers grown using chemical‐beam‐epitaxial base structures (1988) (8)
Laser‐alloyed stripe‐geometry DH lasers (1979) (8)
Planar regrowth of InP and InGaAs around reactive ion etched mesas using atmospheric pressure metalorganic vapor phase epitaxy (1993) (7)
Fiber-dispersion and propagation-delay measurements with frequency- and amplitude-modulated cleaved-coupled-cavity semiconductor lasers. (1984) (7)
Single mode operation of 1.5‐μm cleaved‐coupled‐cavity InGaAsP lasers (1983) (7)
WDM channel monitoring and signal power control/equalization using integrated tunable active filters (1997) (7)
Threshold‐wavelength and threshold‐temperature dependences of GaInAsP/InP lasers with frequency selective feedback operating in the 1.3‐ and 1.5‐μm regions (1983) (7)
High performance InGaAsP/InP lasers on Si substrates (1994) (7)
Cavity formation in semiconductor lasers (1992) (7)
Distribution Coefficient of Antimony in Silicon from Solvent Evaporation Experiments (1961) (7)
Optically pumped taper‐coupled GaAs‐AlxGa1−xAs laser with a second‐order Bragg reflector (1978) (7)
Stripe-geometry laser with in-situ ohmic contact and self-aligned native surface oxide mask for current isolation prepared by molecular beam epitaxy (1982) (7)
Electric field dependent cathodoluminescence of III‐V compound heterostructures: A new interface characterization technique (1985) (7)
Liquid phase epitaxial growth of InP using In1−xSnx melts (1986) (7)
Two-Channel Soliton Pulse Propagation over 9,000 km with 10-9 Bit-Error-Rate (1991) (7)
Large‐signal picosecond response of InGaAs/InP quantum well lasers with an intracavity loss modulator (1990) (7)
Laser cathode ray tube with a semiconductor double-heterostructure screen (1983) (6)
1.3 μm/1.5 μm bidirectional WDM optical-fibre transmission system experiment at 144 Mbit/s (1983) (6)
All-Optical Demultiplexing at 16 Gbit/s using Four-Wave Mixing (1991) (6)
Stop‐cleaved InGaAsP lasers for monolithic optoelectronic integration (1985) (6)
Recombination process and its effect on the dc performance of InP/InGaAs single‐heterojunction bipolar transistors (1993) (6)
Comparison of colliding pulse and self-colliding pulse monolithic cavity mode-locked semiconductor lasers (1992) (6)
Very high sidemode-suppression-ratio distributed-Bragg-reflector lasers grown by chemical beam epitaxy (1992) (6)
The Distribution of Copper between Germanium and Ternary Melts Saturated with Germanium. (1956) (6)
Anomalous Behavior of Nitrogen in Pulled GaP Crystals (1971) (6)
7.5 km bidirectional single-mode optical-fibre link using dual-mode InGaAsP/InP 1.3 μm laser detectors (1985) (6)
Very low threshold 1.55 μm grating coupled surface‐emitting lasers for optical signal processing and interconnect (1995) (6)
Dependence of InGaAs/InP multiquantum well laser characteristics on the degree of substrate misorientation (1991) (6)
High temperature performance of strained quaternary quantum well lasers (1994) (6)
Two-carrier space-charge-limited current in GaP (1964) (6)
V‐groove distributed feedback laser for 1.3–1.55 μm operation (1986) (6)
Dual Beam Laser: A Gaas Double-Cavity Laser with Branching Output Waveguides (1978) (6)
The origin of large dark spots in AlxGa1−xAs‐GaAs heterostructure photoluminescence (1977) (6)
Low-threshold GaInAsP/InP mesa lasers (1982) (5)
Performance enhancement of InGaAs/InP quantum well lasers by both tensile and compressive strain (1990) (5)
Hybrid Soliton Pulse Source with Fiber Bragg Reflector (1992) (5)
Asymmetric line broadening in intracavity loss modulated quantum well distributed feedback lasers (1991) (5)
Reproducible liquid phase epitaxial growth of InGaAsP buried heterostructure lasers (1987) (5)
Elimination of light scattering from grating irregularities by using a quantum well grating in index or gain-coupled distributed feedback lasers (1993) (5)
High-power mode-locked hybrid pulse source using two-section laser diodes. (1994) (5)
Active spectral stabilization of cleaved-coupled-cavity (C3) lasers (1984) (5)
IIb-5.5 MOS control of switches in single mode GaAs-Al x Ga 1-x As optical rib waveguides (late paper) (1977) (5)
Dynamic spectral broadening in digitally modulated lasers (1991) (5)
High-transconductance insulating-gate InP/InGaAs buried p-buffer DH-MODFETs grown by MOVPE (1989) (5)
LPE of buried heterostructure laser devices (1986) (5)
Influence of orientation dependent growth kinetics on the performance of InGaAsP buried crescent lasers (1984) (5)
Multielectrode quantum well lasers for digital switching (1990) (5)
InGaAsP ridge waveguide distributed feedback lasers operating near 1.55 µm (1986) (5)
High-power picosecond pulse generation in GaAs multiquantum well phase-locked laser arrays using pulsed current injection (1984) (5)
High-power, narrow-linewidth, stable single-mode hybrid laser (1994) (4)
Comparison of gain recovery dynamics among multiple quantum-well optical amplifiers with different confinement structures (1991) (4)
A new lateral selective‐area growth by liquid‐phase epitaxy: The formation of a lateral double‐barrier buried‐heterostructure laser (1982) (4)
Anisotropic phonon generation in GaAs epilayers and pn junctions (1978) (4)
Subpicosecond monolithic collidingpulse modelocked multiple quantum well lasers (2014) (4)
Low leakage current and saturated reverse characteristic in broad-area InGaAsP diodes (1980) (4)
Gigahertz bit rate analog to digital conversion with optical outputs using cleaved‐coupled‐cavity semiconductor lasers (1983) (4)
Effect of excess Zn around the active‐stripe mesa on the lasing threshold current of a [01̄1] oriented InGaAsP/InP buried‐heterostructure laser diode (1994) (4)
Optically pumped InGaAsP/InP distributed feedback lasers (1984) (4)
Room temperature operation of a sub-micron radius disk laser (1993) (4)
Index-profile determination of heterostructure GaAs planar waveguides from mode-angle measurements at 10.6 μm wavelength (1975) (4)
1.5 μm wavelength InGaAs/InGaAsP distributed feedback multi‐quantum‐well lasers grown by chemical beam epitaxy (1991) (4)
Integrated distributed feedback laser and optical amplifier (1991) (4)
Monolithic colliding pulse mode-locked lasers (1992) (4)
Long wavelength InGaAsP/InP distributed feedback lasers grown by chemical beam epitaxy (1992) (4)
Misfit stress‐induced compositional instability in hetero‐epitaxial compound semiconductor structures (1996) (4)
Long-distance transmission experiment at 2.5 Gbit/s using an integrated laser/modulator grown by selective-area MOVPE (1994) (4)
Ultrawide bandwidth 1.55-um lasers (1996) (4)
Specific contact resistance for alloyed Au‐Zn contacts on p‐type GaxIn1−xPyAs1−y (1980) (3)
Erratum: 25 GHz bandwidth 1.55 μm GaInAsPp-doped strained multiquantum-well lasers (1993) (3)
Synchrotron section topographic study of defects in InP substrates and quaternary laser structures (1989) (3)
Misfit Dislocations in Strained Layer Epitaxy (1993) (3)
Extremely narrow spectral widths from resonant cavity light-emitting diodes (RCLEDs) suitable for wavelength-division multiplexing at 1.3 mu m and 1.55 mu m (1992) (3)
Enhanced modulation bandwidth of strained MQW lasers (1992) (3)
Schottky barrier restricted AlGaAs laser with an etched mesa ohmic contact (1984) (3)
On the Nuclear Magnetic Moment ofNa23 (1951) (3)
Short optical pulse generated by integrated MQW DBR laser/EA-modulator fabricated by selective-area MOVPE (1993) (3)
Liquid‐phase‐epitaxial regrowth in the GaInAsP system (1987) (3)
Single mode GaAs-Al x Ga 1-x As rib waveguide switches (1977) (3)
Electron-hole plasma diffusion in direct-gap semiconductors? (Erratum) (1986) (3)
Monolithic additive pulse mode-locked quantum well laser (1992) (3)
Multilongitudinal mode operation in angled stripe buried heterostructure lasers (1983) (3)
Electrooptic Polarization Modulation in Multielectrode Al/sub x/Ga/sub 1- x/As Rib Waveguides (1982) (3)
Analysis of T/sub 0/ in 1.3 /spl mu/m multi-quantum well and bulk active lasers (1994) (3)
A plasma resonance study of valley transfer in (001) Si inversion layers (1981) (3)
Output Coupling Induced Wavelength Shifts in Erbium-Doped Fiber Lasers (1993) (3)
WP-A1 experimental observation of nonequilibrium carrier transport in GaAs (1980) (3)
Colliding pulse mode-locked quantum-well lasers on a single chip (1990) (2)
Femtosecond monolithic colliding-pulse mode-locked quantum well lasers (1992) (2)
Low-threshold InGaAsP buried-crescent stop-cleaved lasers for monolithic integration (1985) (2)
Material characteristics of 1.55-µm high-speed p-doped compressively strained MQW lasers (1994) (2)
Ultrafast Carrier Dynamics in GaAs and AlxGa1−x As (1986) (2)
Semiconductor microdisk lasers (1992) (2)
Threshold current characteristics of GaAs lasers under short pulse excitation (1984) (2)
OPTICAL TRANSITIONS IN STRAINED IN1-XGAXASYP1-Y QUANTUM WELLS CLAD BY LATTICE-MATCHED BARRIERS OF INGAASP (1994) (2)
Spectral linewidth of multiple quantum well distributed feedback (MQW-DFB) lasers grown by low pressure MOVPE (1992) (2)
Ultra-high speed long wavelength MQW lasers (1993) (2)
Picosecond Spectroscopy of Semiconductor Microstructures (1980) (2)
Temperature dependence of semiconductor lasers (Invited Paper) (1992) (2)
InGaAsP ( lambda =1.3 mu m) strip buried heterostructure lasers grown by MOCVD (1991) (2)
High performance integrated coherent transceivers for optical access networks (1996) (2)
A very simple integrated coherent receiver with record high sensitivity (1996) (2)
Monolithic CPM Diode Lasers (1992) (2)
Study of gain in determining T/sub 0/ of 1.3 /spl mu/m semiconductor lasers (1994) (2)
119 -km, 420 Mb/s Transmission with a 1.55 µm Single-Frequency Laser (1983) (2)
InGaAsP Buried Crescent Lasers With Separate Optical Confinement (1983) (2)
Short pulse generation using semiconductor lasers (1992) (2)
Packaged hybrid soliton pulse source results and 270 terabit.km/sec soliton transmission using sliding-frequency guiding filters (1994) (2)
Wavelength multiplexing of 1.31‐μm InGaAsP buried crescent laser arrays (1983) (1)
Temperature sensitivity of long-wavelength laser threshold (1992) (1)
Soliton Collisions in Fiber Amplifier Based Systems (1990) (1)
Raman scattering of slab‐mode phonons in InGaAsP/InP multiple quantum wells (1991) (1)
Sub-picosecond optical pulse generation at 350 GHz in monolithic passive CPM MQW lasers (1990) (1)
Dynamic optoelectronic read/write memory (1990) (1)
Cryogenic noise performance of OMVPE-grown InGaAs/InP MODFET (1990) (1)
A study of the valence band structure of Ga0.47In0.53As by angle resolved photoemission (1983) (1)
Full wafer processing for buried heterostructure lasers (1993) (1)
Differences between the ultrafast TE and TM gain recovery dynamics in QW optical amplifiers (1992) (1)
Loss measurement in p‐type GaAs dielectric waveguides using Raman scattering (1979) (1)
Self-aligned InP p-n junction diodes fabricated with ³He+bombardment (1984) (1)
MICROWAVE INTENSITY AND FREQUENCY MODULATION OF RIDGE-WAVEGUIDE-TYPE DFB LASERS (1984) (1)
TA-B5 pulsations and absorbing defects in (Al,Ga)As injection lasers (1979) (1)
Excitronic transitions in nanometer scale quantum wires produced by in-plane lattice-constant modulation (1990) (1)
The e-h plasma in direct-gap GaAlas under 3-d confinement (1983) (1)
InGaAsP/InP inverted rib waveguide lasers emitting at 1.54 μm (1985) (1)
Ultrashort pulse generation using intracavity loss-modulated quantum-well lasers (1991) (1)
Gain-coupled long wavelength InGaAsP/InP distributed feedback lasers with quantum well gratings grown by chemical beam epitaxy (1992) (1)
Phonon-Assisted Semiconductor Tunneling (1969) (1)
Femtosecond studies of absorption saturation dynamics in GaAs (1986) (1)
1.5/spl mu/ InGaAs/InGaAsP separate confinement multi-quantum well lasers grown by chemical beam epitaxy (1990) (1)
Time resolving self-focusing effects in semiconductor QW optical amplifiers (1992) (1)
Liquid phase epitaxial growth of buried heterostructure devices (1987) (1)
Generation of subpicosecond transform-limited optical pulses for optical fiber communications (1991) (1)
Semiconductor Devices Made with Single Crystal Germanium‐Silicon Alloys (1954) (1)
Single and multimode fiber bandwidth measurements with single and multilongitudinal mode lasers operating at 0.8-, 1.3-, and 1.5-µm wavelength (1985) (1)
Efficient electroluminescence from laser‐irradiated (Al,Ga)As‐heterostructure diodes (1982) (1)
Cleaved-Coupled-Cavity (C 3 ) Semiconductor Lasers (1984) (1)
Stabilization of Cleaved-Coupled- Cavity (C3) Lasers (1984) (1)
VI-1 observation of a nonradiative donor-related defect center in AlxGa1-xAs with anomalously large lattice relaxation (1977) (1)
Packaging relaxed semiconductor lasers with diluted waveguide structure (1994) (1)
Single-mode picosecond optical pulses generated by a semiconductor DFB laser with QW loss gratings (1992) (1)
Noncontact inspection of opaque film thickness in single layer and multilayer structures and edge-exclusion zones (1997) (0)
Emitting far field pattern study of long wavelength grating coupling surface emitting lasers (1994) (0)
Raman Scattering Technique to Evaluate Losses in GaAs Dielectric Waveguides (1975) (0)
ON/OFF RATIO DEGRADATION OF HIGH DENSITY WDM SYSTEMS DUE TO RAMAN CROSSTALK (1990) (0)
Narrow spectral width surface emitting LED for long wavelength multiplexing applications (1984) (0)
Long Wavelength lnGaAsP/lnP Distributed Feedback Lasers (1992) (0)
Buried heterostructure lasers based on InGaAsP/InP (1993) (0)
Monolithic integration of lasers and bipolar transistors by selective area epitaxy (1993) (0)
WP-B1 optical absorption and saturation of the deep Te-complex center in AlxGa1-xAs (1978) (0)
Modified double‐channel planar‐buried heterostructure laser with improved high‐temperature stability (1987) (0)
Modeling and Experimental Characterization of Optical Gain in InGaAsP-Based Lasers (1996) (0)
Application of integrated active filters in multichannel optical communication systems (1997) (0)
Femtosecond Monolithic CPM Quantum-Well Lasers (1991) (0)
Manufacture of product made of semiconductor laser (1991) (0)
Strained-layer multiquantum well semiconductor lasers (1992) (0)
High power hybrid pulse source (1994) (0)
WP-B2 catastropic damage of AlxGa1-xAs double heterostructure laser material (1978) (0)
Enhanced characteristics of InGaAsP buried quaternary lasers with pressure in the diamond anvil cell (2008) (0)
III-4 taper coupled GaAs-Al x Ga 1-x As injection lasers with distributed Bragg refelectors (1975) (0)
ERRATUM: EFFECTS OF γ‐IRRADIATION UPON LIFETIME AND LUMINESCENCE OF GaP DIODES (1964) (0)
Quaternary InGaAsP buried crescent lasers with separate optical confinement (1983) (0)
Mode-locked soliton pulse source with fiber cavity and integrated chirped Bragg reflector (1993) (0)
VI-1 Observation of a Nonradiative Donor-Related Defect Center in A1,Gal-,As with Anomalously Large Lattice (1976) (0)
Mode Conversion and Radiation Loss Caused by Refractive-Index Fluctuations in an Asymmetric Slab Waveguide (1977) (0)
High performance single and multiple quantum well InGaAs/InP lasers (1989) (0)
Fiber transmission of 650-fs pulses at 350 GHz generated by monolithic colliding-pulse mode-locking quantum-well lasers (1991) (0)
Semiconductor waveguide component (1977) (0)
Erbium-doped semiconductor injection lasers: enhanced single-longitudinal-mode operation and 1.5-μm transmission experiment (1987) (0)
Potential Chirpless DFB Lasers for InGaAs/InGaAsP Compressive-Strained Quantum Wells Using Modulation Doping (1992) (0)
1 . 5 m wavelength InGaAs / InGaAsP distributed feedback multiquantumwell lasers grown by chemical beam epitaxy (2014) (0)
Very low threshold long wavelength surface emitting lasers (1994) (0)
Quantum-Well Lasers for High-Speed Optical Information Processing (1991) (0)
Monolithic integrated optical devices (1975) (0)
MuItiiunction AC or DC Integrated GaP Light Emitting Diode Array (1975) (0)
Generation of subpicosecond optical pulses by mode-locking semiconductor lasers with millimeter-wave sources (1991) (0)
Pressure dependence of the output characteristics of 1.3 µm InGaAsP buried heterostructure lasers (1993) (0)
InGaAshGaAsP integrated tunable detector grown by chemical beam epitaxy (1999) (0)
A method for increasing the doping of semiconductor material (1961) (0)
Exciton Dynamics in Cleaved Edge Overgrown Quantum Wires (1994) (0)
Long wavelength Ga I n N Ass b/ Ga NAsS b multiple quantum well lasers (2002) (0)
I-4 elastically enhanced nonradiative recombination in AlGaAs-GaAs double heterostructure laser material (1975) (0)
Parameter ranges for monolithic colliding pulse mode-locked QW (1992) (0)
III-5 frequency modulation of double heterostructure injection laser with integrated electrooptic intracavity modulator (1975) (0)
Integrated Optical Circuits Grown by Liquid Phase Epitaxy (1976) (0)
Optically induced catastrophic degradation in InGaAsP laser structures (2020) (0)
A semiconductor photodiode (1981) (0)
Light-emitting diode having stripe geometry and manufacturing process here for (1978) (0)
Noise characteristics of semiconductor laser arrays with and without modulation (1990) (0)
GaAs-AIxGal,As Strip Buried Heterostructure Lasers (1979) (0)
InP/InGaAs optical microstructures (1991) (0)
Taper-Coupled Laser with Long Passive Waveguides for Monolithic Integration (1979) (0)
The effect of uniaxial stress on the persistent photoconductivity in Te-doped AlxGa1−xAs (1987) (0)
Growth of InP on patterned substrates using AP-MOVPE (1994) (0)
Saturable absorption in voltage-controlled InGaAs/InP quantum-well lasers (1991) (0)
Pulse narrowing by harmonic modulation of an integrated DBR laser modulator (1994) (0)
Collector-emitter offset voltage in InP/InGaAs single and double heterojunction bipolar transistors (1994) (0)
Electrooptic Polarization Modulated Injection Laser (1980) (0)
Erratum: ‘‘Substrate orientation effects on dopant incorporation in InP grown by metalorganic chemical vapor deposition’’ [J. Appl. Phys. 73, 4095 (1993)] (1994) (0)
VI-3 nonradiative "Large dark spots" in AlxGa1-xAs-GaAs heterostructures (1977) (0)
Low-threshold pulsed and continuous oscillation from AlGaAs/GaAs double-heterostructure lasers grown by MOCVD on Si substrates (1987) (0)
A method for surface finishing by a germanium Halbleiterkoerpers rectifier and Verstaerker (1953) (0)
Electrical Properties of InP / lnGaAs Heterojunction Bipolar Transistors (2005) (0)
Monolithic 1.54µm semiconductor ring lasers grown by selective area epitaxy (1993) (0)
IIb-5.5 MOS control of switches in single mode GaAs-Al<inf>x</inf>Ga<inf>1-x</inf>As optical rib waveguides (late paper) (1977) (0)
Analysis of Gain Difference Between Forward- and Backward-Pumped (1992) (0)
IIIA-3 monolithic integrated coupling of an Al x Ga 1-x As laser to a low-loss passive Al y Ga 1-x As waveguide (1974) (0)
InGaAsP Ridge Waveguide Distributed Feedback Lasers (1986) (0)
Electrooptic Polarization Modulation in Multielectrode AlGA AS Rib Waveguides ' by (2017) (0)
Manufacturing method of buried hetero-structure laser (1993) (0)
Dependence Temperature Gain Nonlinearity and Its in Bulk and Quantum-Well Quaternary Lasers (1995) (0)
Efficient electroluminescent junctions at 25°C in GaP (1967) (0)
Narrow-linewidth strained-layer 1.5 μm multiquantum well distributed feedback lasers (1991) (0)
Integrated data encoding of a 5-Gbit/s soliton pulse train using a laser/modulator transmitter (1995) (0)
Optical Device Structures Grown By Liquid Phase Epitaxy (LPE) (1982) (0)
Whispering-gallery mode microlasers (1993) (0)
Digital transmission with intracavity loss modulated quantum well distributed feedback lasers (1991) (0)
ON THE NUCLEAR MAGNETIC MOMENT OF Na$sup 2$$sup 3$ (1950) (0)
1.55-μm InGaAsP ridge waveguide distributed feedback laser (1985) (0)
IIB-3 new interdigitated pn junction device with novel capacitance-voltage characteristic and ultrahigh optical sensitivity (1982) (0)
Optical transitions in strained quantum wells of In/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y/ with InGaAsP barriers (1994) (0)
High-speed optoelectronic sources for multi-gigabit communication links (1994) (0)
Performance characteristics of InGaAs/InP strained quantum-well lasers (1991) (0)
Observation of Multi-Wavelength Soliton Collisions in Fiber Amplifier Based Systems (1990) (0)
An optical device with double heterostructure (1975) (0)
InGaAsP/InGaAs multi-quantum-well distributed-Bragg-reflector lasers grown by chemical beam epitaxy (1993) (0)
Manufacture of group iii-v semiconductor laser (1992) (0)
Symmetry of a Donor Related (DX) Center in AℓxGa1-xAs (1980) (0)
Section topographic study of semiconductor laser crystals (1987) (0)
Densely Packed Electrooptic AlyGa1−yAs−AlxGa1−xAs Rib Waveguide Modulators and Switches (1978) (0)
High performance long wavelength strained layer InGaAs/InP quantum well lasers (1990) (0)
Design, Fabrication And Performance Of A Very High Side-mode-suppression-ratio Distributed-Bragg-reflector Laser (1992) (0)
Ultra-wide bandwidth 1.55 μm Lasers (1996) (0)
Bi-directional 1.3µm/l.5µm WDM Fiber-Optic 144 Mb/s Transmission PUBLIC Experiment (1983) (0)
Multi-gigabit short pulse generation from integrated DBR laser/modulators (1994) (0)
GaAs/AlGaAs multiple quantum well long wavelength infrared detector arrays using etched gratings (1989) (0)
IIb-2 GaAs integrated lasers and detectors fabricated by wet chemical etching (1977) (0)

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