R. Sen Gupta
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Engineering
R. Sen Gupta's Degrees
- PhD Electrical Engineering University of California, Berkeley
- Masters Electrical Engineering University of California, Berkeley
- Bachelors Electrical Engineering Stanford University
Why Is R. Sen Gupta Influential?
(Suggest an Edit or Addition)R. Sen Gupta's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched AlGaN/GaN HEMTs (2002) (147)
- A Dielectric-Modulated Tunnel-FET-Based Biosensor for Label-Free Detection: Analytical Modeling Study and Sensitivity Analysis (2012) (145)
- An Investigation of Linearity Performance and Intermodulation Distortion of GME CGT MOSFET for RFIC Design (2012) (112)
- Sub-micron chip ESD protection schemes which avoid avalanching junctions (1995) (106)
- Dielectric Modulated Tunnel Field-Effect Transistor—A Biomolecule Sensor (2012) (104)
- Physics-based analytical modeling of potential and electrical field distribution in dual material gate (DMG)-MOSFET for improved hot electron effect and carrier transport efficiency (2002) (96)
- Analytical model for threshold voltage and I-V characteristics of fully depleted short channel cylindrical/surrounding gate MOSFET (2001) (85)
- TCAD Assessment of Device Design Technologies for Enhanced Performance of Nanoscale DG MOSFET (2011) (81)
- Assessment of Ambipolar Behavior of a Tunnel FET and Influence of Structural Modifications (2012) (78)
- Polarization dependent analysis of AlGaN/GaN HEMT for high power applications (2007) (74)
- Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation (2014) (74)
- An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET (2012) (74)
- Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor (2011) (69)
- Impact of Temperature Variations on the Device and Circuit Performance of Tunnel FET: A Simulation Study (2013) (68)
- Performance Evaluation and Reliability Issues of Junctionless CSG MOSFET for RFIC Design (2014) (68)
- Numerical modeling of Subthreshold region of junctionless double surrounding gate MOSFET (JLDSG) (2016) (54)
- Impact of graded channel (GC) design in fully depleted cylindrical/surrounding gate MOSFET (FD CGT/SGT) for improved short channel immunity and hot carrier reliability (2007) (50)
- Drain current model for a gate all around (GAA) p-n-p-n tunnel FET (2013) (47)
- An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET (2007) (45)
- 2‐D analytical model for current–voltage characteristics and output conductance of AlGaN/GaN MODFET (2001) (45)
- Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET: Analog performance and linearity analysis (2012) (44)
- An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering (2014) (44)
- Gate All Around MOSFET With Vacuum Gate Dielectric for Improved Hot Carrier Reliability and RF Performance (2013) (42)
- Analytical modeling and simulation of subthreshold behavior in nanoscale dual material gate AlGaN/GaN HEMT (2008) (41)
- Dual-Material Double-Gate SOI n-MOSFET: Gate Misalignment Analysis (2009) (40)
- Numerical Model of Gate-All-Around MOSFET With Vacuum Gate Dielectric for Biomolecule Detection (2012) (36)
- An accurate 2D analytical model for short channel thin film fully depleted cylindrical/surrounding gate (CGT/SGT) MOSFET (2001) (35)
- Gate-All-Around Nanowire MOSFET With Catalytic Metal Gate For Gas Sensing Applications (2013) (35)
- Improved analog and AC performance with increased noise immunity using nanotube junctionless field effect transistor (NJLFET) (2016) (34)
- Two-Dimensional Analytical Drain Current Model for Double-Gate MOSFET Incorporating Dielectric Pocket (2012) (33)
- Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation (2007) (33)
- Intermodulation distortion and linearity performance assessment of 50-nm gate length L-DUMGAC MOSFET for RFIC design (2008) (32)
- Analytical Modeling and Simulation for Dual Metal Gate Stack Architecture (DMGSA) Cylindrical/Surrounded Gate MOSFET (2012) (32)
- Analytical drain current formulation for gate dielectric engineered dual material gate-gate all around-tunneling field effect transistor (2015) (32)
- An analytical threshold voltage model for graded channel asymmetric gate stack (GCASYMGAS) surrounding gate MOSFET (2008) (29)
- Temperature-Dependent Gate-Induced Drain Leakages Assessment of Dual-Metal Nanowire Field-Effect Transistor—Analytical Model (2019) (29)
- Hafnium oxide based cylindrical junctionless double surrounding gate (CJLDSG) MOSFET for high speed, high frequency digital and analog applications (2019) (29)
- Performance investigation of heterogeneous gate dielectric-gate metal engineered–gate all around-tunnel FET for RF applications (2017) (29)
- Mathematical modeling insight of hetero gate dielectric-dual material gate-GAA-tunnel FET for VLSI/analog applications (2017) (29)
- An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications (2006) (28)
- Design considerations for novel device architecture: hetero-material double-gate (HEM-DG) MOSFET with sub-100 nm gate length (2004) (27)
- AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applications (2012) (27)
- Gate-Induced Drain Leakage Reduction in Cylindrical Dual-Metal Hetero-Dielectric Gate All Around MOSFET (2018) (27)
- Modeling and simulation of asymmetric gate stack (ASYMGAS)-MOSFET (2003) (27)
- Comprehensive analysis of small-signal parameters of fully strained and partially relaxed high Al-content lattice mismatched Al/sub m/Ga/sub 1-m/N/GaN HEMTs (2003) (26)
- Laterally amalgamated DUal Material GAte Concave (L-DUMGAC) MOSFET for ULSI (2008) (25)
- Analytical model for dc characteristics and small‐signal parameters of AIGaN/GaN modulation‐doped field‐effect transistor for microwave circuit applications (2000) (25)
- Impact of strain relaxation of AlmGa1−mN layer on 2-DEG sheet charge density and current voltage characteristics of lattice mismatched AlmGa1−mN/GaN HEMTs (2002) (23)
- High-K Spacer Dual-Metal Gate Stack Underlap Junctionless Gate All Around (HK-DMGS-JGAA) MOSFET for high frequency applications (2020) (23)
- Shallow Extension Engineered Dual Material Surrounding Gate (SEE-DM-SG) MOSFET for improved gate leakages, analysis of circuit and noise performance (2019) (22)
- Novel design to improve band to band tunneling and gate induced drain leakages (GIDL) in cylindrical gate all around (GAA) MOSFET (2019) (22)
- A complete analytical model of GaN MESFET for microwave frequency applications (2001) (21)
- TCAD assessment of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET and its multi-layered gate architecture, Part II: Analog and large signal performance evaluation (2009) (21)
- An Accurate Charge-Control-Based Approach for Noise Performance Assessment of a Symmetric Tied-Gate InAlAs/InGaAs DG-HEMT (2012) (20)
- Physics-based analytic modeling and simulation of gate-induced drain leakage and linearity assessment in dual-metal junctionless accumulation nano-tube FET (DM-JAM-TFET) (2020) (20)
- Dual metal Schottky barrier asymmetric gate stack cylindrical gate all around (DM-SB-ASMGS-CGAA) MOSFET for improved analog performance for high frequency application (2019) (20)
- Dielectric Modulated Junctionless Biotube FET (DM-JL-BT-FET) Bio-Sensor (2021) (20)
- Short Channel Analytical Model for High Electron Mobility Transistor to Obtain Higher Cut-Off Frequency Maintaining the Reliability of the Device (2007) (19)
- Parasitic resistance and polarization‐dependent polynomial‐based non‐linear analytical charge‐control model for AlGaN/GaN MODFET for microwave frequency applications (2003) (19)
- Analytical two-dimensional modeling for potential distribution and threshold voltage of the short-channel fully depleted SOI (silicon-on-insulator) MOSFET (1994) (19)
- Modelling and simulation of subthreshold behaviour of cylindrical surrounding double gate MOSFET for enhanced electrostatic integrity (2015) (19)
- Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range (2012) (18)
- Modeling of hetero-interface potential and threshold voltage for tied and separate nanoscale InAlAs-InGaAs symmetric double-gate HEMT (2009) (18)
- Hot-Carrier Reliability of Gate-All-Around MOSFET for RF/Microwave Applications (2013) (18)
- Modeling of shallow extension engineered dual metal surrounding gate (SEE-DM-SG) MOSFET gate-induced drain leakage (GIDL) (2020) (17)
- Analytical Model of Double Gate MOSFET for High Sensitivity Low Power Photosensor (2013) (17)
- Two Dimensional Analytical Subthreshold Model of Nanoscale Cylindrical Surrounding Gate MOSFET Including Impact of Localised Charges (2012) (17)
- Carrier‐concentration‐dependent low‐field‐mobility model for InAlAs/InGaAs/InP lattice‐matched HEMT for microwave application (2001) (17)
- Two-dimensional C-V model of AlGaAs/GaAs modulation doped field effect transistor (MODFET) for high frequency applications (1999) (17)
- Two-dimensional analytical model to characterize novel MOSFET architecture: insulated shallow extension MOSFET (2007) (16)
- Analytical non-linear charge control model for InAlAs/InGaAs/InAlAs double heterostructure high electron mobility transistor (DH-HEMT) (2005) (16)
- Charge sheet model of a polysilicon thin-film transistor (2002) (16)
- Id–Vd characteristics of optically biased short channel GaAs MESFET (2001) (16)
- Two-dimensional subthreshold analysis of sub-micron GaN MESFET (2007) (16)
- Analytical performance evaluation of AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor and its comparison with conventional HFETs for high power microwave applications (2008) (15)
- Novel Dual-Metal Junctionless Nanotube Field-Effect Transistors for Improved Analog and Low-Noise Applications (2020) (15)
- An Accurate Small Signal Modeling of Cylindrical/Surrounded Gate MOSFET for High Frequency Applications (2012) (15)
- A Linear Thermistor-Based Temperature-to-Frequency Converter Using a Delay Network (1985) (15)
- A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications (2007) (14)
- Analytical noise model of a high‐electron‐mobility transistor for microwave‐frequency application (2004) (14)
- Chromosomal abnormalities in protein-calorie malnutrition. (1977) (14)
- An analytical parasitic resistance dependent I d - V d model for planar doped InA1As/InGaAs/InP HEMT using non-linear charge control analysis (2002) (14)
- Graded channel architecture: the solution for misaligned DG FD SOI n-MOSFETs (2008) (14)
- Design and optimization of thin film fully depleted vertical surrounding gate (VSG) MOSFETs for enhanced short channel immunity (2002) (14)
- Physics-based modelling and simulation of dual material gate stack (DUMGAS) MOSFET (2003) (14)
- Temperature dependent analytical model of sub-micron GaN MESFETs for microwave frequency applications (2008) (14)
- Capacitance–voltage characteristics and cutoff frequency of pseudomorphic (AlGaAs/InGaAs) modulation‐doped field‐effect transistor for microwave and high‐speed circuit applications (1999) (13)
- Dynamic performance of graded channel DG FD SOI n-MOSFETs for minimizing the gate misalignment effect (2009) (13)
- Modeling and analysis of fully strained and partially relaxed lattice mismatched AlGaN/GaN HEMT for high temperature applications (2008) (13)
- Modeling and simulation of cylindrical surrounding double-gate (CSDG) MOSFET with vacuum gate dielectric for improved hot-carrier reliability and RF performance (2016) (13)
- Gate-Material-Engineered Junctionless Nanowire Transistor (JNT) With Vacuum Gate Dielectric for Enhanced Hot-Carrier Reliability (2016) (13)
- Temperature dependence on electrical characteristics of short geometry poly-crystalline silicon thin film transistor (2005) (13)
- Analytical Modeling of Dielectric Pocket Double-Gate MOSFET Incorporating Hot-Carrier-Induced Interface Charges (2014) (13)
- Two-dimensional analytical subthreshold model of graded channel DG FD SOI n-MOSFET with gate misalignment effect (2009) (12)
- Temperature dependent subthreshold model of long channel GAA MOSFET including localized charges to study variations in its temperature sensitivity (2014) (12)
- Design and optimization of vertical surrounding gate MOSFETs for enhanced transconductance-to-current ratio (gm/Ids) (2003) (12)
- Subthreshold conduction in short-channel polycrystalline-silicon thin-film transistors (2000) (12)
- Optimisation for improved short-channel performance of surrounding/cylindrical gate MOSFETs (2001) (11)
- An analytical model for turn-on characteristics of short channel polycrystalline-silicon thin-film transistor for circuit simulation (2000) (11)
- Microwave performance enhancement in Double and Single Gate HEMT with channel thickness variation (2010) (11)
- An analytical model for current-voltage characteristics of a small-geometry poly-Si thin-film transistor (2000) (11)
- Modeling and simulation of multi layer gate dielectric double gate tunnel field-effect transistor (DG-TFET) (2011) (11)
- An analytical model for anomalous threshold voltage behavior of short channel MOSFETs (1997) (11)
- RF performance assessment of AlGaN/GaN MISHFET at high temperatures for improved power and pinch‐off characteristics (2009) (10)
- Modeling and simulation of STacked Gate Oxide (STGO) architecture in Silicon-On-Nothing (SON) MOSFET (2005) (10)
- Modeling of kink effect in polysilicon thin film transistor using charge sheet approach (2003) (10)
- Impact of doping concentration and donor-layer thickness on the dc characterization of symmetric double-gate and single-gate InAlAs/InGaAs/InP HEMT for nanometer gate dimension-A comparison (2010) (10)
- Analytical model of 6H-SiC MOSFET (2003) (10)
- Numerical analysis of localised charges impact on static and dynamic performance of nanoscale cylindrical surrounding gate MOSFET based CMOS inverter (2013) (10)
- Numerical modelling and simulation of non-uniformly doped channel 6H-silicon carbide MOSFET (2004) (9)
- Modeling of short geometry polycrystalline-silicon thin-film transistor (2000) (9)
- An analytical model for discretized doped InAlAs/InGaAs heterojunction HEMT for higher cut-off frequency and reliability (2006) (9)
- Cut off frequency and transit time analysis of lightly doped drain (LDD) MOSFETs (1998) (9)
- Physics-based Algorithm Implementation for Characterization of Gate-dielectric Engineered MOSFETs including Quantization Effects (2005) (9)
- Temperature-dependent threshold voltage analysis of surrounding/cylindrical gate fully depleted thin film SOI MOSFET in the range 77 to 520 K (1999) (9)
- Sensitivity investigation of gate-all-around junctionless transistor for hydrogen gas detection (2016) (9)
- A new depletion dependent analytical model for sheet carrier density of InAlAs/InGaAs heterostructure, InP based HEMT (2003) (9)
- Temperature-Dependent Analytical Model for Microwave and Noise Performance Characterization of $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As/In}_{m} \hbox{Ga}_{1-m}\hbox{As}$ $(\hbox{0.53} \leq m \leq \hbox{0.8})$ DG-HEMT (2013) (9)
- A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications (2006) (8)
- TRANSCONDUCTANCE EXTRACTION FOR PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR (ALGAAS/INGAAS) FOR MICROWAVE AND MILLIMETER-WAVE APPLICATIONS (1999) (8)
- Temperature and aluminium composition dependent sheet carrier concentration at AlGaAs/GaAs interface (2000) (8)
- Simulation study of Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for high temperature applications (2012) (8)
- 1/f noise model of fully overlapped lightly doped drain MOSFET (2000) (8)
- Metal Insulator Gate Geometric HEMT: Novel Attributes and Design Consideration for High Speed Analog Applications (2010) (8)
- Interface traps distribution and temperature-dependent 6H-SiC MOSFET analysis (2005) (8)
- Improved linearity performance of AlGaN/GaN MISHFET over conventional HFETs: An optimization study for wireless infrastructure applications (2011) (8)
- A linear temperature-to-frequency converter using a thermistor (1981) (7)
- Silicon carbide based DSG MOSFET for high power, high speed and high frequency applications (2014) (7)
- A physics based analytical model for buried p-layer non-self aligned SiC MESFET for the saturation region (2005) (7)
- Effect of Temperature and Gate Stack on the Linearity and Analog Performance of Double Gate Tunnel FET (2011) (7)
- Substrate‐effect‐dependent scattering parameter extraction of short‐gate‐length IGFET for microwave frequency applications (2000) (7)
- Gate dielectric engineering of quarter sub micron AlGaN/GaN MISHFET: A new device architecture for improved transconductance and high cut-off frequency (2008) (7)
- An analytical model for GaN MESFET's using new velocity-field dependence (2006) (7)
- Investigation of multi-layered-gate electrode workfunction engineered recessed channel (MLGEWE-RC) sub-50 nm MOSFET: A novel design (2009) (7)
- Two dimensional simulation and analytical modeling of a novel ISE MOSFET with gate stack configuration (2009) (7)
- Analytical model for high temperature performance of non-self aligned SiC MESFET (2005) (7)
- Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency (2008) (7)
- Small-signal analytical MOSFET model for microwave frequency applications (2000) (7)
- On-state and RF performance investigation of sub-50 nm L-DUMGAC MOSFET design for high-speed logic and switching applications (2008) (7)
- A new simplified analytical short-channel threshold voltage model for InAlAs/InGaAs heterostructure InP based pulsed doped HEMT (2004) (7)
- Analytical model for C–V characteristics and transient response of submicrometer non-self-aligned GaAs MESFET (1998) (7)
- Physics based threshold voltage extraction and simulation for poly-crystalline thin film transistors using a double-gate structure (2006) (7)
- Investigation of Electrostatic Integrity of Nanoscale Dual Material Gate Dielectric Pocket Silicon-on-Void (DMGDPSOV) MOSFET for Improved Device Scalability (2014) (6)
- A new analytical model to determine the drain-source series resistance of FOLD MOSFET (1999) (6)
- Investigation of Dual-Material Double Gate Junctionless Accumulation-Mode Cylindrical Gate All Around (DMDG-JLAM-CGAA) MOSFET with High-k Gate Stack for low Power Digital Applications (2020) (6)
- Hot‐carrier reliability monitoring of DMG ISE SON MOSFET for improved analog performance (2010) (6)
- An improved intrinsic small‐signal equivalent circuit model of delta‐doped AlGaAs/InGaAs/GaAs HEMT for microwave frequency applications (2003) (6)
- T-gate geometric (solution for submicrometer gate length) HEMT: Physical analysis, modeling and implementation as parasitic elements and its usage as dual gate for variable gain amplifiers (2009) (6)
- Recent Technological Advancement in Surrounding Gate MOSFET for Biosensing Applications - a Synoptic Study (2021) (6)
- Modeling power VDMOSFET transistors: Device physics and equivalent circuit model with parameter extraction (2004) (6)
- Cutoff frequency and optimum noise figure of GaAs optically controlled FET (2000) (6)
- Unified model for physics-based modelling of a new device architecture: triple material gate oxide stack epitaxial channel profile (TRIMGAS Epi) MOSFET (2007) (6)
- Temperature dependent model for Dielectric Pocket Double Gate (DPDG) MOSFET: A novel device architecture (2012) (6)
- Model for dc and rf characteristics of optically biased GaN metal semiconductor field effect transistor for electronic/optoelectronic microwave applications (2002) (5)
- Immunity against temperature variability and bias point invariability in double gate tunnel field effect transistor (2012) (5)
- Analysis of scattering parameters and thermal noise of a MOSFET for its microwave frequency applications (2001) (5)
- Comparison of Three Region Multiple Gate Nanoscale Structures for Reduced Short Channel Effects and High Device Reliability (2006) (5)
- Gate capacitance characteristics of a poly-Si thin film transistor (2004) (5)
- A comparative assessment of Schottky-Barrier Source/Drain GAA MOSFET with conventional and junctionless GAA MOSFETs (2013) (5)
- Comparative Study of Silicon-on-Nothing and III–V-on-Nothing Architecture for High Speed and Low Power Analog and RF/Digital Applications (2013) (5)
- A device model for an ion-implanted MESFET with Half-Pearson and Half-Gaussian distribution under post-anneal conditions (1994) (5)
- RF characterization of 100‐nm separate gate InAlAs/InGaAs DG‐HEMT (2013) (5)
- High Sensitivity Photodetector Using Si/Ge/GaAs Metal Semiconductor Field Effect Transistor (MESFET) (2011) (5)
- COMMENT AND CORRESPONDENCE: Comments on 'Wide-range, linear temperature-to-frequency converters using standard thermistors' (1984) (5)
- Impact of Reverse Gate Oxide Stacking on Gate All Around Tunnel FET for High Frequency Analog and RF Applications (2020) (5)
- An analytical charge-based drain current model for nano-scale In0.52Al0.48As–In0.53Ga0.47 as a separated double-gate HEMT (2010) (5)
- Physics-based drain current modeling of gate-all-around junctionless nanowire twin-gate transistor (JN-TGT) for digital applications (2016) (5)
- Schottky Barrier Double Surrounding Gate MOSFET for High-Frequency Implementation (2020) (5)
- Optimization of InAlAs/InGaAs HEMT Performance for Microwave Frequency Applications and Reliability (2004) (5)
- Asymmetrie Vacuum Gate Dielectric Schottky Barrier Gate all around MOSFET for ambipolarity reduction and improved hot carrier reliability (2015) (5)
- Narrow gate effect on depletion mode insulated gate field effect transistor (1994) (4)
- Intrinsic admittance parameter for separate gate InA1As/InGaAs DG-HEMT for 100 nm gate length (2013) (4)
- Analytical modeling of dual-metal gate stack engineered junctionless accumulation-mode cylindrical surrounding gate (DMGSE-JAM-CSG) MOSFET (2021) (4)
- Stability of the Darlington composite transistor (1969) (4)
- Gallium Nitride Cylindrical Schottky Barrier MOSFET(GaN-CSB-MOSFET) For High-Frequency Implementation (2021) (4)
- Analytical Model for Metal Insulator Semiconductor High Electron Mobility Transistor (MISHEMT) for its High Frequency and High Power Applications (2006) (4)
- Substrate-bias-dependent threshold-voltage model of short-channel MOSFET (1993) (4)
- Extraction technique for characterization of electric field distribution and drain current in VDMOS power transistor (2003) (4)
- Barrier height enhancement of triangular barrier diodes (1986) (4)
- An analysis of majority‐carrier three‐layer bulk semiconductor unipolar diodes (1986) (4)
- An accurate two-dimensional CAD-oriented model of retrograde doped MOSFETs for improved short channel performance (2002) (4)
- Quantum Modeling of Nanoscale Symmetric Double- Gate InAlAs/InGaAs/InP HEMT (2013) (4)
- Analytical theory of two-dimensional charge sheet model for short channel MOSFETs under non linear charge control (1995) (4)
- Cut-off frequency and transit time analysis in short geometry polysilicon thin-film transistors (2001) (4)
- Performance Analysis of Drain Pocket Hetero Gate Dielectric DG-TFET: Solution for Ambipolar Conduction and Enhanced Drive Current (2022) (4)
- Temperature dependence on electrical characteristics of short geometry polycrystalline silicon thin film transistor (2005) (3)
- Enhanced Analog Performance and High-Frequency Applications of Dielectric Engineered High-K Schottky Nanowire FET (2022) (3)
- A physics based charge control model of lattice mismatched AlGaN/GaN HEMTs (2002) (3)
- Dual metal (DM) Insulated Shallow Extension (ISE) Gate All Around (GAA) MOSFET to reduce gate induced drain leakages (GIDL) for improved analog performance (2017) (3)
- Gate material engineered‐trapizoidal recessed channel MOSFET for high‐performance analog and RF applications (2010) (3)
- Amplifier characteristics of Darlington composite transistor (1970) (3)
- Investigation of Tunnel Field Effect Transistor for Biosensing Applications (2019) (3)
- Novel design to improve band to band tunneling and gate induced drain leakages (GIDL) in cylindrical gate all around (GAA) MOSFET (2017) (3)
- Frequency optimization of pseudomorphic modulation‐doped field‐effect transistor (AlGaAs/InGaAs) for microwave and millimeter‐wave applications (2000) (3)
- Optical radiation and temperature-dependent microwave performance of optically biased GaAs metal-semiconductor field effect transistor (2002) (3)
- Evaluation of scattering parameters, gain, and feedback‐capacitance‐dependent noise performance of a pseudomorphic high‐electron‐mobility transistor (2005) (3)
- An analytical two‐dimensional model for an optically controlled thin‐film fully depleted surrounding/cylindrical‐gate (SGT) MOSFET (2001) (3)
- An analytical 2D model for drain-induced barrier lowering in subquarter micrometer gate length InAlAs/InGaAs/InAlAs/InP LMHEMT (2002) (3)
- Two-dimensional analytical sub-threshold model of multi-layered gate dielectric recessed channel (MLaG-RC) nanoscale MOSFET (2008) (3)
- Optimization of Gate Stack MOSFETs with Quantization Effects (2004) (3)
- Accurate charge‐control model for analysis of noise properties for AlGaAs/GaAs hemt and AlGaAs/InGaAs phemt at microwave frequencies (2004) (3)
- Analytical model for a dielectric modulated double gate FET (DM-DG-FET) biosensor (2012) (3)
- Two-dimensional threshold voltage model and design considerations for gate electrode work function engineered recessed channel nanoscale MOSFET: I (2009) (3)
- Analytical two-dimensional model for pulsed doped InP-based lattice-matched HEMTs for high frequency applications (2002) (3)
- Impact of Temperature and Indium Composition in the Channel on the Microwave Performance of Single-Gate and Double-Gate InAlAs/InGaAs HEMT (2013) (3)
- Model for optically biased short‐channel GaAs MESFET (2002) (3)
- SOI Schottky Barrier Nanowire MOSFET with Reduced Ambipolarity and Enhanced Electrostatic Integrity (2020) (3)
- Admittance parameter and unilateral power‐gain evaluation of GaN MESFET for microwave circuit applications (2001) (3)
- A new two-dimensional short channel model for the drain current-voltage characteristics of a fully depleted SOI (silicon-on-insulator) MOSFET (1995) (3)
- Asymmetric gate oxide Tunnel Field Effect Transistor for improved circuit performance (2012) (3)
- Influence of gate leakage current induced shot noise on the Minimum Noise Figure of InAlAs/InGaAs double-gate HEMT (2017) (3)
- Impact of asymmetric gate stack on a junctionless CSG MOSFET for enhanced hot carrier reliability (2015) (3)
- Current–voltage characteristics and field distribution of pseudomorphic (AlGaAs/InGaAs) modulation‐doped field‐effect transistor for microwave circuit applications (2000) (2)
- Optimization of Si MESFET model with Pearson distribution (FMA) : a novel approach (1996) (2)
- Poly-crystalline Silicon Thin Film Transistor: a Two- dimensional Threshold Voltage Analysis using Green's Function Approach (2007) (2)
- RF Performance comparison of Dual Material Gate (DMG) and Conventional AlGaN/GaN High Electron Mobility Transistor (2018) (2)
- RF performance analysis and small signal parameter extraction of Cylindrical Surrounding Double Gate MOSFETs for sub-millimeter wave applications (2014) (2)
- A semi-empirical approach to study a high performance Poly-Si TFT with selectively floating a:Si layer (2005) (2)
- Parasitic element dependent scattering parameter evaluation of GaN MESFET (2002) (2)
- Modeling, characterization and optimization of tri-step doped InAIAs/InGaAs heterostructure, InP based HEMT for microwave frequency applications (2003) (2)
- Extraction of small‐signal model parameters of silicon MOSFET for RF applications (2000) (2)
- Traps induced Greens function based mathematical modeling for BaTiO3–SrTiO3 gate stack dual metal GAA MOSFET (2019) (2)
- A new extrinsic dc model for high speed lattice matched InAlAs/InGaAs/InP HEMT with a predicted 135 GHz cut-off frequency (2001) (2)
- Multi-material gate poly-crystalline thin film transistors: Modeling and simulation for an improved gate transport efficiency (2008) (2)
- Proceedings of the 4th International Symposium on Recent Advances in Microwave Technology (1993) (2)
- Subthreshold current model with modified threshold voltage for submicrometre scale GaAs MESFETS (1997) (2)
- Low-frequency generation–recombination noise in fully overlapped lightly doped drain MOSFETs (2001) (2)
- Temperature-dependent threshold voltage model for a non-uniformly doped short channel MOSFET (1994) (2)
- Extraction of admittance parameters of symmetrically doped AlGaN/GaN/AlGaN DH-HEMT for microwave frequency applications (2020) (2)
- GaN based Dual-Metal Gate Stack Engineered Junctionless-Surrounding-Gate (DMSEJSG) MOSFET for High Power Applications (2019) (2)
- Analog and Digital Performance Assessment of Empty Space in Double Gate (ESDG) MOSFET: A Novel Device Architecture (2013) (2)
- Radiation-Sensitive AlGaN/GaN MOS-HEMT-Based Dosimeter (2022) (2)
- GaN based tunnel field effect transistor for terahertz applications (2017) (2)
- Investigations of the variation of voltage gain with stability factor and biasing resistances in Darlington composite transistor (1969) (2)
- Effect of variation of generator resistance on output resistance of complementary composite transistors (1972) (2)
- A 2D analytic field-dependent-mobility model for the I-V characteristics of thin film fully-depleted SOI MOSFETs (1995) (2)
- Stability factor of the composite transistor (1969) (2)
- Single-stage amplifier characteristics of the super-beta composite transistor† (1969) (2)
- Impact of Inner Charge Control Gate on Cylindrical Surrounding Gate MOSFET for Improved Electrostatic Integrity and RF Performance (2016) (2)
- Design considerations and impact of technological parametric variations on RF/microwave performance of GEWE‐RC MOSFET (2010) (2)
- Enhancement in performance of poly-crystalline thin film transistors with gate dielectric and work-function (2006) (2)
- Graphene Based Tunnel Field Effect Transistor for RF Applications (2019) (2)
- A Block Based Scheme using Tuned Tri-threshold Fuzzy Intensification Operators for Underwater Images (2019) (2)
- A semi-empirical approach to analyze small geometry effects in LDD MOSFETs (2001) (2)
- An empirical fringing capacitance dependent threshold voltage model for non-uniformly doped submicron MOSFETs (1996) (2)
- Controlling Ambipolarity and Rising Ion in TFETs for Enhanced Reliability: A Review (2020) (2)
- TCAD Analysis of Small Signal Parameters and RF Performance of Heterogeneous Gate Dielectric-Gate All Around Tunnel FET (2015) (2)
- Analytical Model for Double-Gate Tunneling Field-Effect Transistor (DG-TFET) Using Carrier Concentration Approach (2013) (2)
- Quantum modeling of electron confinement in double triangular quantum well formed in nanoscale symmetric double-gate InAlAs/InGaAs/InP HEMT (2011) (2)
- Small Signal Parameter Extraction of III-V Heterojunction Surrounding Gate Tunnel Field Effect Transistor (2017) (2)
- Comparative protein profiles of Salmonella and E. coli. (2005) (2)
- A comprehensive charge control based analysis of the effect of donor-layer doping and donor-layer thickness on the P, R and C noise coefficients of a symmetric tied-gate InAlAs/InGaAs DG-HEMT (2012) (1)
- Pre-Distortion Assessment of Workfunction Engineered Multilayer Dielectric Design of DMG ISE SON MOSFET (2008) (1)
- Gate - Stack Dual Metal (DM) Nanowire FET with Enhanced Analog Performance for High Frequency Applications (2021) (1)
- Amplifier characteristics of the super-alpha composite transistor (1970) (1)
- Effect of variation of load resistance on amplifier characteristics of a complementary composite transistor (1971) (1)
- Quantum Modeling of Enhanced Gate Control in a Nanoscale InAlAs/InGaAs DG-HEMT for millimeter-wave Applications (2014) (1)
- Hot Carrier Reliability Issues of Junctionless Transistor due to Interface Trap Charges for Analog/RF Applications (2014) (1)
- Investigation of multi‐layered‐gate electrode workfunction engineered recessed channel (MLGEWE‐RC) sub‐50 nm MOSFET: A novel design (1)
- Semi-empirical model to predict the threshold voltage and Id-Vd characteristics of small geometry LDD MOSFETs (2000) (1)
- Temperature dependence of the threshold voltage in a double-implanted MOSFET (1992) (1)
- Determination of barrier height and technological parameters of triangular barrier diodes (1987) (1)
- Material engineering in Cylindrical Surrounding Double Gate (CSDG) MOSFETs for enhanced electrostatic integrity and RF performance (2014) (1)
- Optimization of high performance fully overlapped LDD (FOLD) MOSFET's (1998) (1)
- Self‐heating‐dependent thermal‐noise model using a distributed‐gate structure for RF applications (2004) (1)
- Modeling of AlxGa1-xN/GaN heterostructure field effect transistors (HFETs) for microwave and millimeter wave circuit applications (2002) (1)
- Characterisation and Analysis of Schottky-Tube FET exhibiting Superior Characteristic Parameters (2022) (1)
- Semiempirical model for admittance and scattering parameters of GaN MESFET for microwave circuit applications (2007) (1)
- CSDG MOSFET: An Advanced novel architecture for CMOS technology (2015) (1)
- Doping induced threshold voltage and ION/IOFF ratio modulation in surrounding gate MOSFET for analog applications (2022) (1)
- Stability factor of the Darlington composite transistor (1970) (1)
- Performance evaluation of dielectric modulation and metalloid T-shaped source/drain on gate-all-around junctionless transistor for improved analog/RF application (2021) (1)
- Flicker noise modelling of small geometry LDD MOSFETs (2001) (1)
- Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications (2019) (1)
- Simulating Optical Behavior of Nano Dimensional InAlAs/InGaAs HEMT for IoT Applications (2018) (1)
- Hafnium oxide based cylindrical junctionless double surrounding gate (CJLDSG) MOSFET for high speed, high frequency digital and analog applications (2017) (1)
- Lateral channel engineered hetero material insulated shallow extension gate stack (HMISEGAS) MOSFET structure: high performance RF solution for MOS technology (2007) (1)
- Source material valuation of charge plasma based DG-TFET for RFIC applications (2022) (1)
- Two Dimensional Modeling of III-V Heterojunction Gate All Around Tunnel Field Effect Transistor (2017) (1)
- Influence of profile shape factors on intrinsic Si-MESFET device capacitances under diffusion mechanism (1998) (1)
- Digital circuit analysis of insulated shallow extension silicon on void (ISESOV) FET for low voltage applications (2012) (1)
- Impact of Multi-Layered Gate Design on Hot Carrier Reliability of Gate Electrode Workfunction Engineered Recessed Channel ( GEWE-RC ) MOSFET (2008) (1)
- An analytical temperature dependent threshold voltage model for thin film Surrounded Gate SOI MOSFET (2000) (1)
- Interface trap-dependent linearity assessment in single and dual metal gate junctionless accumulation mode (surrounding gate) nanowire MOSFET (2019) (1)
- High frequency noise in fully overlapped lightly doped drain MOSFETs (2003) (1)
- Laterally-asymmetric-channel-insulated-shallow-extension-silicon-on-nothing LAC-ISE-SON MOSFET for improved reliability and digital circuit simulation (2012) (1)
- Analytical modelling of the kink regime of a short channel polycrystalline silicon thin film transistor (2006) (1)
- Comparative subthreshold analysis for channel thickness variation on sub-100 nm Double Gate with Single-Gate HEMT (2008) (1)
- Current Saturation and Small Signal Characteristics of Non-Self Aligned GaAs MESFET (1997) (1)
- Switching characteristics of InN tunnel field effect transistor and its application in the design of RF amplifiers (2017) (1)
- Physics based Threshold Voltage Analysis of Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC) Nanoscale MOSFET and its multilayered gate architecture (2010) (1)
- Optimization of Drain Engineered MOS Transistors for Microwave Frequency Applications (1999) (1)
- Analytical model for non-self aligned buried p-layer SiC MESFET (2004) (1)
- Comment on "Inverse-narrow-width effects and small-geometry MOSFET threshold voltage model" [with reply] (1993) (1)
- Linearity Performance Assessment of Nanoscale Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC) MOSFET for RFIC design and Wireless application (2010) (1)
- Compact Analytical Threshold Voltage Model for Nanoscale Multi-Layered-Gate Electrode Workfunction Engineered Recessed Channel (MLGEWE-RC) MOSFET (2008) (1)
- Numerical modeling of a dielectric modulated surrounding-triple-gate germanium-source MOSFET (DM-STGGS-MOSFET)-based biosensor (2023) (1)
- Fringing capacitance and parasitic resistance dependant characteristics of fully overlapped lightly doped drain MOSFET (2000) (1)
- 4H-SiC-Dopant Segregated Schottky Barrier Cylindrical Gate All Around MOSFET for high speed and high power microwave applications (2014) (0)
- Computational analysis of potential profile of III-V heterojunction gate-all-around Tunneling FET for low power digital circuits (2016) (0)
- Modeling and simulation of cylindrical surrounding double-gate (CSDG) MOSFET with vacuum gate dielectric for improved hot-carrier reliability and RF performance (2016) (0)
- Effect of ITC on the characteristics of junctionless nanowire transistor(JLNWT) for future ULSI applications: Semianalytical modeling approach (2013) (0)
- Linearity and Intermodulation Distortion Assessment of Underlap Engineered Cylindrical Junctionless Surrounding Gate MOSFET for Low Noise CMOS RFIC Design (2019) (0)
- Threshold voltage shift in depletion mode insulated gate field effect transistors (1994) (0)
- An analytical modeling approach for a gate all around (GAA) tunnel field effect transistor (TFET) (2012) (0)
- Assessment of analog RF performance for insulated shallow extension (ISE) cylindrical surrounding gate (CSG) MOSFET incorporating gate stack (2017) (0)
- Cylindrical SOI Schottky Barrier MOSFET with High Linearity and Low Static Power for Digital and Analog Circuits Application (2021) (0)
- Asymmetrically-recessed nano-scale In0.52Al0.48As-In0.53Ga0.47As double-gate HEMT for high breakdown voltage (2011) (0)
- A new analytical 2-D potential distribution model in subthreshold region including DIBL in short channel MOSFET (1998) (0)
- AC analysis of Junctionless Double Surrounding Gate (JLDSG) MOSFET for Tera Hertz applications (2016) (0)
- TCAD Assessment of Oxide Impact on Linearity and Harmonic Distortions in Gate All Around (GAA) MOSFET (2018) (0)
- Channel Material Engineered Nanoscale Cylindrical Surrounding Gate MOSFET with Interface Fixed Charges (2011) (0)
- A Novel Linear Temperature-To-Voltage Converter Based on Thermistor-resistor-Transistor Network (1982) (0)
- Polarization dependent charge control model for microwave performance assessment of AlGaN/GaN/AlGaN double heterostructure HEMTs (2018) (0)
- Comparative study of Compound Semiconductors/ Silicon- based Cylindrical Surrounding Dual-Metal Gate Junctionless Accumulation-Mode (CS-DMG-JAM) MOSFET for High Frequency and Switching Applications (2022) (0)
- Fringing field dependent small geometry MOSFET model for radio frequency applications (2000) (0)
- A Method to Determine Surface Doping and Substrate Doping Profile of n-Channel MOSFETs (1988) (0)
- A fringing field dependent 2-D model for non-uniformly doped short channel MOSFETs (1999) (0)
- Short-Channel Threshold Voltage Model for Tied and Separate Nanoscale In0.52Al0.48As-In0.53Ga0.47As Symmetric Double-Gate HEMT (2010) (0)
- Gate-Geometric Recessed Nanoscale $\hbox{In}_{0.52} \hbox{Al}_{0.48}\hbox{As}$–$\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ Double-Gate HEMT for High Breakdown (2012) (0)
- Performance Investigation of Silicon Nanowire Tunnel FET for Analog and Digital Applications (2013) (0)
- 1996 Asia-Pacific Microwave Conference proceedings : December 17-20, 1996, Hotel Ashok, New Delhi, India (1996) (0)
- Channel thermal noise of SOI MOSFET in high-frequency region (2005) (0)
- An Iterative Approach to Characterize Various Advanced Non-Uniformly Doped Channel Profiles (2008) (0)
- Comments on "An analytical two-dimensional perturbation method to model submicron GaAs MESFET's" [with reply] (1993) (0)
- Threshold voltage model for short channel retrograde doped MOSFETs (2002) (0)
- Design of First Order Active Low Pass Filter using 22nm Gate All Around Silicon-on-Insulator Schottky Barrier MOSFET (2021) (0)
- Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications (2023) (0)
- Analytical modeling of polysilicon TFT using charge sheet approach (2002) (0)
- Modelling challenges in sub-100 nm gate stack MOSFETs (2006) (0)
- An accurate model for planar doped InAlAs/InGaAs/InP MODFETS for microwave circuit applications (2002) (0)
- Physics based Analytical Model for a Pocket Doped p-n-p-n Tunnel Field Effect Transistor (2012) (0)
- RF performance of dual metal cylindrical/surrounded gate MOSFET for high switching speed applications (2012) (0)
- Model for illumination-dependent trap occupancy in optically biased GaN metal-semiconductor field effect transistor for improved electrical characteristics (2003) (0)
- Assessment of L-DUMGAC MOSFET for High Performance RF Applications with Intrinsic Delay and Stability as Design Tools (2008) (0)
- Gain and stability of a new composite transistor (1973) (0)
- Analytical model for junctionless accumulation‐mode cylindrical surrounding gate ( JAM‐CSG ) MOSFET as a biosensor (2023) (0)
- Microwave and RF Applications of Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC ) MOSFET (2010) (0)
- An accurate 2‐D model for transconductance‐to‐current ratio and drain conductance of vertical surrounding‐gate (VSG) MOSFETs for microwave circuit applications (2001) (0)
- Charge plasma technique based dopingless accumulation mode junctionless cylindrical surrounding gate MOSFET: analog performance improvement (2017) (0)
- Note on the Temperature Dependence of the Interbase Resistance of a Unijunction Transistor (1982) (0)
- A Comparative Analysis Using Modeling and Simulation to Study the Impact of Multilayered Gate Dielectric ( MGD ) Design on Device Performance of Surrounding Gate MOSFET (2008) (0)
- Extraction of admittance parameters of symmetrically doped AlGaN/GaN/AlGaN DH-HEMT for microwave frequency applications (2020) (0)
- Investigating the Linearity Performance of DMG AlGaN / GaN HEMT for Improved RF Applications (2008) (0)
- Impact of Non-Uniformly Doped and Multilayered Asymmetric Gate Stack Design on Device Characteristics of Surrounding Gate MOSFETs (2008) (0)
- Temperature-dependent characterization of InAlAs/InGaAs/InP LMHEMT for microwave frequency application (2004) (0)
- A Novel Linear Temperature-to-Voltage/Time Converter Using Unijunction Transistor as a Sensor (1984) (0)
- Physics-based analytic modeling and simulation of gate-induced drain leakage and linearity assessment in dual-metal junctionless accumulation nano-tube FET (DM-JAM-TFET) (2020) (0)
- Characterization of small geometry LDD MOSFETs with non-pinned flat band voltage (2000) (0)
- Using Unijunction Transistor as a Temperature Sensor (1983) (0)
- Performance investigation and linearity analysis of new cylindrical MOSFET for wireless applications (2015) (0)
- Analytical Drain Current Model for Damaged Gate All Around (GAA) MOSFET Including Quantum and Velocity Overshoot Effects (2012) (0)
- Measurement of minority carrier lifetime in silicon solar cells using an a.c. light source (1990) (0)
- Physics-based drain current modeling of gate-all-around junctionless nanowire twin-gate transistor (JN-TGT) for digital applications (2016) (0)
- Halo LDD Combination device An Iterative Approach to Characterize Various Advanced Non-Uniformly Doped Channel Profile (2008) (0)
- Two-dimensional Analytical Drain Current Model for Multilayered-Gate Material Engineered Trapezoidal Recessed Channel ( MLGME-TRC ) MOSFET : a Novel Design (2012) (0)
- Interface trap-dependent linearity assessment in single and dual metal gate junctionless accumulation mode (surrounding gate) nanowire MOSFET (2019) (0)
- Modelling of threshold voltage adjustment in fully depleted double gate (DG) SOI MOSFETs in volume inversion to quantify requirements of gate materials (2004) (0)
- Performance investigation of heterogeneous gate dielectric-gate metal engineered–gate all around-tunnel FET for RF applications (2016) (0)
- Analytical model for C∼V characteristics of GaN MESFET for microwave frequency applications (2002) (0)
- Theoretical investigation of back gate bias effect on the electrostatic integrity of Insulated Shallow Extension Silicon On Void (ISESOV) MOSFET (2012) (0)
- Two-dimensionalanalyticalsubthresholdmodelofgraded channelDGFDSOIn-MOSFETwithgatemisalignment effect (2009) (0)
- Analog Performance of Dual- Metal Gate Stack Architecture of Junctionless Accumulation-Mode Cylindrical Surrounding Gate (DMGSA-JAM-CSG) MOSFET (2021) (0)
- Current-voltage characteristics and small signal parameters of an AlGaAs/GaAs modulation doped field effect transistor (2000) (0)
- Modelling of current-voltage characteristics of modulation doped field effect transistor with velocity overshoot effect (2000) (0)
- Improving the performance of poly – silicon thin film transistor for switching and driver circuitry (2006) (0)
- Design of Temperature Independent Logarithmic Converter Using Window Comparator (1985) (0)
- Gate-length and Donor-layer Characteristics Optimization of InAlAs/InGaAs DG-HEMT for Improved RF and Noise Performance (2013) (0)
- Analytical model for field distribution and capacitance-voltage characteristics of pseudomorphic (AlGaAs/InGaAs) modulation doped field effect transistor (2000) (0)
- Enhancement in Performance of sub-100 nm MOSFETs With Gate Stack Architecture (2006) (0)
- Linearity Investigation of Ultra-Low-Power Cylindrical SOI Schottky Barrier MOSFET for Biomedical and 5G/LTE Circuits Application (2021) (0)
- High-K Spacer Dual-Metal Gate Stack Underlap Junctionless Gate All Around (HK-DMGS-JGAA) MOSFET for high frequency applications (2019) (0)
- Modeling of shallow extension engineered dual metal surrounding gate (SEE-DM-SG) MOSFET gate-induced drain leakage (GIDL) (2020) (0)
- Switching characteristics of a modulation-doped field effect transistor (1998) (0)
- Analytical model for saturation drain current and substrate current of fully overlapped LDD MOSFET (2001) (0)
- Drain induced barrier lowering : A short channel effect, in a double-gate SOI MOSFET (1998) (0)
- Simulation of Enhanced Gate Control in a Double Gate Quantum Domain InAlAs/InGaAs/InP HEMT (2012) (0)
- Dual gate AlGaN/GaN MOS-HEMT biosensor for electrical detection of biomolecules-analytical model (2023) (0)
- Modeling and Simulation of Poly-crystalline Silicon Thin Film Transistor for Improved Gate Transport Efficiency (2006) (0)
- Analytical Modeling and Simulation ofPotential and Electric FieldDistribution inDual Material Gate HEMT For SuppressedShort Channel Effects (2007) (0)
- Improved analog and AC performance with increased noise immunity using nanotube junctionless field effect transistor (NJLFET) (2016) (0)
- A model for subthreshold behaviour of short channel Poly-Si thin film transistor (2000) (0)
- High-K Spacer Gate Stack Engineered, Dual Metal Underlap Junction-less GaN Gate All Around (HKS-GSE-DMUL-JGaNGAA) MOSFET for High Frequency Applications (2022) (0)
- Impact of Insulating Layers on Single and Double Gate MOSFET for Improved Short Channel Effect and Hot Carrier Reliability (2013) (0)
- Sheet carrier concentration and current–voltage analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N double heterostructure hemt incorporating the effect of traps (2019) (0)
- MOSFET/MESFET/HEMT Device Physics and Modeling for VLSI Engineering (2007) (0)
- Analytical modeling of gate-all-around junctionless transistor based biosensors for detection of neutral biomolecule species (2017) (0)
- Design Aspects of a Submicrometer Gate Length High Electron Mobility Transistor (1999) (0)
- Modeling of current-voltage characteristics and transconductance of Extrinsic Lattice Matched InAlAs/InGaAs/InP HEMT for high frequency application (2002) (0)
- Study of Piezoelectric-mechanical Properties of III-V Nitride Based Tunnel FET (2019) (0)
- Temperature dependency and linearity assessment of dual-metal gate stack junctionless accumulation-mode cylindrical surrounding gate (DMGS-JAM-CSG) MOSFET (2021) (0)
- A Fringing Field Dependent Id-Vd Model for Small Geometry n-MOSFETS (1998) (0)
- Impact of donor-layer doping & thickness, gate-length and temperature on potential and electron concentration in AlGaN/GaN Double-Heterostructure and Single-Heterostructure HEMT (2018) (0)
- A numerical model of GaN based cylindrical junctionless gate all around MOSFET for subthreshold region at cryogenic temperatures (2017) (0)
- Impact of localised charges present in the interfacial layer of the schottky contact in SOI MESFET (2012) (0)
- TUPDC0103: Gonorrhea infections diagnosed among persons living with HIV: cross matching surveillance registries to identify potential opportunities for integrated partner services-New York City, Washington D.C., Miami/Dade County and Arizona (2012) (0)
- Scaling Effects on Thermal and Gate Induced Noise of Small Geometry LDD Mosfets (2000) (0)
- Optimization of submicrometre GaAs MESFET for improved performance (1998) (0)
- Impact of noise temperature constant and diffusion coefficient on the minimum noise figure and minimum noise temperature of InAlAs/InGaAs DGHEMT (2012) (0)
- DMG insulated shallow extension cylindrical GAA Schottky Barrier MOSFET for removal of ambipolarity: A novel approach (2016) (0)
- Saturation drain current and substrate current model of fully overlapped lightly doped drain MOSFET (2002) (0)
- Mathematical modeling insight of hetero gate dielectric-dual material gate-GAA-tunnel FET for VLSI/analog applications (2016) (0)
- Optimization of InAlAs/InGaAs heterostructure, InP-based HEMT for its microwave frequency applications (2004) (0)
- Analytical I-V Model for Dual Metal Gate Surrounded MOSFET (2013) (0)
- Nano-modeling of the doping profiles for a symmetric double gate InAlAs/InGaAs/InP HEMT (2012) (0)
- A distributed network model of SOI MOSFET for microwave frequency applications (2003) (0)
- Small signal model parameter extraction for cylindrical silicon-on-insulator Schottky barrier MOSFET (2023) (0)
- Impact of laterally asymmetric channel and gate stack architecture on device performance of surrounding gate MOSFETs (2010) (0)
- Measuring Hybrid Parameters of Composite Transistors (1972) (0)
- A Fuzzy Method to Optimize the Performance of Si d-MESFETs: Influence of Pearson Profile (1998) (0)
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