Rachel Oliver
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Physics
Rachel Oliver 's Degrees
- PhD Astrophysics University of Oxford
Why Is Rachel Oliver Influential?
(Suggest an Edit or Addition)According to Wikipedia, Rachel Angharad Oliver is a Professor of Materials Science at the University of Cambridge and a fellow of Robinson College, Cambridge. She works on characterisation techniques for gallium nitride materials for dark-emitting diodes and laser diodes.
Rachel Oliver 's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Observation of top quark production in $\bar{p}p$ collisions (1995) (536)
- Advances in AFM for the electrical characterization of semiconductors (2008) (190)
- Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering (2007) (167)
- Carrier localization mechanisms in InxGa1?xN/GaN quantum wells (2010) (152)
- InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal (2003) (134)
- Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers (2007) (115)
- Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3 (2006) (111)
- Atom probe tomography today (2007) (109)
- Growth modes in heteroepitaxy of InGaN on GaN (2005) (107)
- The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures (2012) (99)
- Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures (2008) (94)
- Microstructural origins of localization in InGaN quantum wells (2010) (87)
- Efficient light-emitting diodes from mixed-dimensional perovskites on a fluoride interface (2020) (87)
- Inclusive jet cross section in p̄p collisions at √ = 1.8 TeV (1996) (84)
- Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures (2007) (77)
- Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures (2012) (69)
- Cavity-enhanced blue single-photon emission from a single InGaN∕GaN quantum dot (2007) (65)
- Support-Catalyst-Gas Interactions during Carbon Nanotube Growth on Metallic Ta Films (2011) (62)
- Low temperature growth of ultra-high mass density carbon nanotube forests on conductive supports (2013) (61)
- Low threshold, room-temperature microdisk lasers in the blue spectral range (2012) (60)
- Temporal variation in photoluminescence from single InGaN quantum dots (2004) (58)
- The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells (2016) (58)
- Unintentional doping in GaN. (2012) (58)
- The effects of Si doping on dislocation movement and tensile stress in GaN films (2011) (55)
- Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot. (2007) (55)
- Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field (2005) (54)
- Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions (2015) (51)
- Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification (2017) (51)
- Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells (2011) (50)
- Time-resolved dynamics in single InGaN quantum dots (2003) (50)
- Nanoscale solid-state quantum computing (2003) (50)
- The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes (2013) (50)
- Transcript analysis of 1003 novel yeast genes using high‐throughput northern hybridizations (2001) (49)
- Nucleation and growth of GaN/AlN quantum dots (2003) (49)
- The impact of trench defects in InGaN/GaN light emitting diodes and implications for the ?green gap? problem (2014) (49)
- Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography (2015) (48)
- Structural, electronic, and optical properties of m -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory (2015) (46)
- AFM observation of diamond indenters after oxidation at elevated temperatures (2010) (44)
- The Spatial Distribution of Threading Dislocations in Gallium Nitride Films (2009) (43)
- Carrier localization in the vicinity of dislocations in InGaN (2017) (41)
- The influence of coalescence time on unintentional doping in GaN/sapphire (2009) (40)
- Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice. (2011) (39)
- Non‐polar (11$ \bar 2 $0) InGaN quantum dots with short exciton lifetimes grown by metal‐organic vapour phase epitaxy (2013) (39)
- Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities (2014) (37)
- Two-photon absorption from single InGaN/GaN quantum dots (2006) (36)
- In-situ study of growth of carbon nanotube forests on conductive CoSi2 support (2011) (36)
- Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures (2016) (35)
- Characterization of InGaN quantum wells with gross fluctuations in width (2007) (35)
- Atom probe tomography of nitride semiconductors (2017) (34)
- X-ray diffraction analysis of cubic zincblende III-nitrides (2017) (33)
- The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1−xN epitaxial layers (2009) (33)
- Compositional inhomogeneity of a high-efficiency InxGa1-xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe (2008) (33)
- Stable Speckle Patterns for Nano-scale Strain Mapping up to 700 °C (2017) (32)
- Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition (2019) (31)
- Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance (2019) (30)
- Immunogold localisation of protochlorophyllide oxidoreductase in barley etioplasts (1985) (29)
- Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping (2015) (29)
- Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopy (2006) (29)
- Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities (2014) (29)
- Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires. (2016) (29)
- Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells (2013) (28)
- Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges (2013) (28)
- Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN (2020) (28)
- Surface Zeta Potential and Diamond Seeding on Gallium Nitride Films (2017) (27)
- High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop (2013) (27)
- Atomic layer deposited α-Ga2O3 solar-blind photodetectors (2019) (27)
- Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN (2013) (27)
- The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy (2004) (27)
- Microstructural, optical, and electrical characterization of semipolar (112¯2) gallium nitride grown by epitaxial lateral overgrowth (2010) (27)
- Nitride‐based quantum dots for single photon source applications (2009) (27)
- Practical Issues for Atom Probe Tomography Analysis of III-Nitride Semiconductor Materials (2015) (27)
- α-Ga2O3 grown by low temperature atomic layer deposition on sapphire (2018) (26)
- The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem. (2017) (25)
- Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers (2018) (25)
- Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond. (2020) (25)
- InGaN quantum dots grown by MOVPE via a droplet epitaxy route (2004) (25)
- Low-Temperature Growth of Carbon Nanotube Forests Consisting of Tubes with Narrow Inner Spacing Using Co/Al/Mo Catalyst on Conductive Supports. (2015) (24)
- Dynamics of single InGaN quantum dots (2004) (24)
- Stranski-Krastanov growth of InN nanostructures on GaN studied by RHEED, STM and AFM (2002) (24)
- Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties. (2017) (24)
- Ultra-low threshold gallium nitride photonic crystal nanobeam laser (2015) (24)
- Unintentional doping in GaN assessed by scanning capacitance microscopy (2008) (24)
- Anisotropic strain relaxation in a-plane GaN quantum dots (2007) (23)
- The origin and reduction of dislocations in Gallium Nitride (2008) (22)
- The effects of varying metal precursor fluxes on the growth of InAlN by metal organic vapour phase epitaxy (2011) (22)
- Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source (2008) (22)
- Halide Homogenization for High-Performance Blue Perovskite Electroluminescence (2020) (22)
- The microstructure of non-polar a-plane (11 2¯ 0) InGaN quantum wells (2016) (22)
- The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes (2017) (22)
- Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth (2010) (21)
- Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots. (2017) (21)
- Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method (2014) (21)
- High temperature stability in non‐polar (11$ \bar 2 $0) InGaN quantum dots: Exciton and biexciton dynamics (2014) (21)
- Assessment of the performance of scanning capacitance microscopy for n-type gallium nitride (2008) (21)
- Dielectric response of wurtzite gallium nitride in the terahertz frequency range (2016) (21)
- Origins of Spectral Diffusion in the Micro-Photoluminescence of Single InGaN Quantum Dots (2013) (21)
- Over 15% efficient wide-band-gap Cu(In,Ga)S2 solar cell: Suppressing bulk and interface recombination through composition engineering (2021) (20)
- The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures (2014) (20)
- High resolution transmission electron microscopy and three-dimensional atom probe microscopy as complementary techniques for the high spatial resolution analysis of GaN based quantum well systems (2008) (20)
- Structural impact on the nanoscale optical properties of InGaN core-shell nanorods (2017) (20)
- Observations of Rabi oscillations in a non-polar InGaN quantum dot (2014) (20)
- Gallium nitride surface preparation optimised using in situ scanning tunnelling microscopy (2003) (19)
- Nanocomposites of TiO2/cyanoethylated cellulose with ultra high dielectric constants (2016) (19)
- Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures (2015) (19)
- Spectral diffusion time scales in InGaN/GaN quantum dots (2019) (19)
- Porous nitride semiconductors reviewed (2020) (19)
- Encapsulation of methylammonium lead bromide perovskite in nanoporous GaN (2019) (18)
- What is red? On the chromaticity of orange-red InGaN/GaN based LEDs (2018) (18)
- Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells (2014) (17)
- Ultra-low-threshold InGaN/GaN quantum dot micro-ring lasers. (2018) (17)
- Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM (2019) (17)
- Practical issues in carrier‐contrast imaging of GaN structures (2007) (17)
- Porous AlGaN-Based Ultraviolet Distributed Bragg Reflectors (2018) (17)
- A study of the inclusion of prelayers in InGaN/GaN single‐ and multiple‐quantum‐well structures (2015) (17)
- Optimisation of GaN overgrowth of InAlN for DBRs (2009) (16)
- Thermal stress modelling of diamond on GaN/III-Nitride membranes (2020) (16)
- Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells (2016) (16)
- Photoluminescence studies of cubic GaN epilayers (2017) (16)
- Electrically driven single InGaN/GaN quantum dot emission (2008) (16)
- An investigation into defect reduction techniques for growth of non‐polar GaN on sapphire (2014) (16)
- Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots (2017) (16)
- Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN (2009) (16)
- Improvement of single photon emission from InGaN QDs embedded in porous micropillars (2018) (16)
- Growth and optical characterisation of multilayers of InGaN quantum dots (2012) (15)
- GaN-on-diamond technology platform: Bonding-free membrane manufacturing process (2020) (15)
- Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode (2014) (15)
- Evaluation of growth methods for the heteroepitaxy of non-polar (112¯0) GAN on sapphire by MOVPE (2014) (15)
- Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN (2018) (15)
- Polar ( In , Ga ) N / GaN Quantum Wells: Revisiting the Impact of Carrier Localization on the “Green Gap” Problem (2020) (15)
- Controlled tuning of whispering gallery modes of GaN/InGaN microdisk cavities (2011) (14)
- Effects of microstructure and growth conditions on quantum emitters in gallium nitride (2018) (14)
- Dielectric behaviour of montmorillonite/cyanoethylated cellulose nanocomposites. (2017) (14)
- Properties of trench defects in InGaN/GaN quantum well structures (2013) (13)
- Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures (2014) (13)
- Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering (2020) (13)
- Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures (2013) (13)
- Atom probe reveals the structure of Inx Ga1–x N based quantum wells in three dimensions (2008) (13)
- Dislocation density-dependent quality factors in InGaN quantum dot containing microdisks (2011) (13)
- The effect of V:III ratio on the growth of InN nanostructures by molecular beam epitaxy (2003) (13)
- Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy (2012) (13)
- Experimental and theoretical study of the quantum-confined Stark effect in a single InGaN/GaN quantum dot under applied vertical electric field (2008) (13)
- Characterization of unintentional doping in nonpolar GaN (2010) (13)
- A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers (2016) (12)
- InGaN as a Substrate for AC Photoelectrochemical Imaging (2019) (12)
- Intentional and unintentional localization in InGaN (2007) (12)
- Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization (2015) (12)
- InGaN µLEDs integrated onto colloidal quantum dot functionalized ultra-thin glass. (2017) (12)
- Direct generation of linearly polarized single photons with a deterministic axis in quantum dots (2017) (11)
- Understanding the Role of Grain Boundaries on Charge‐Carrier and Ion Transport in Cs2AgBiBr6 Thin Films (2021) (11)
- Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes (2015) (11)
- Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot (2009) (11)
- A full free spectral range tuning of p-i-n doped gallium nitride microdisk cavity (2012) (11)
- Validity of Vegard’s rule for Al1−xInxN (0.08 < x < 0.28) thin films grown on GaN templates (2017) (11)
- The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells (2014) (11)
- Heteroepitaxial growth of InN islands studied by STM and AFM (2002) (11)
- Deterministic optical polarisation in nitride quantum dots at thermoelectrically cooled temperatures (2017) (11)
- Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells (2019) (11)
- Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth (2017) (11)
- Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching (2020) (10)
- Optical studies of non‐polar m‐plane ( 11¯00 ) InGaN/GaN multi‐quantum wells grown on freestanding bulk GaN (2015) (10)
- Optical and structural properties of dislocations in InGaN (2019) (10)
- Energy landscape and carrier wave-functions in InGaN/GaN quantum wells (2010) (10)
- Critical Assessment 23: Gallium nitride-based visible light-emitting diodes (2016) (10)
- Nanoscopic insights into the effect of silicon on core-shell InGaN/GaN nanorods: Luminescence, composition, and structure (2018) (10)
- Growth and characterisation of nitride nanostructures (2002) (10)
- Defect Reduction in Semi-Polar (112̄2) Gallium Nitride Grown Using Epitaxial Lateral Overgrowth (2013) (10)
- Effects of Wavelength and Defect Density on the Efficiency of (In,Ga)N-Based Light-Emitting Diodes (2017) (10)
- Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds (2013) (10)
- Evolution of the m-Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell Structure (2017) (10)
- Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction (2013) (10)
- Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence (2016) (9)
- Search for chargino-neutralino production in pp collisions at sq rt[s] = 1.96 TeV. (1996) (9)
- Progress in the optical studies of single InGaN/GaN quantum dots (2007) (9)
- Enhanced piezoelectricity and electromechanical efficiency in semiconducting GaN due to nanoscale porosity (2020) (9)
- Carrier dynamics of InxGa1−xN quantum disks embedded in GaN nanocolumns (2011) (9)
- Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS (2010) (9)
- Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold (2016) (9)
- Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire (2014) (9)
- Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures (2014) (9)
- The impact of hydrogen on indium incorporation and surface accumulation in InAlN epitaxy (2011) (8)
- The effects of annealing on non-polar ( 1 1 2̄ 0) a-plane GaN films (2010) (8)
- The relationship between the three-dimensional structure of porous GaN distributed Bragg reflectors and their birefringence (2020) (8)
- Response to “Comment on ‘Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: assessment of possible indium clustering’” [Appl. Phys. Lett. 91, 176101 (2007)] (2007) (8)
- Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot (2017) (8)
- Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys. 109, 073509 (2011)] (2011) (8)
- Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal (2003) (8)
- Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs (2016) (8)
- Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells (2016) (8)
- Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures (2018) (8)
- Imaging dislocations in gallium nitride across broad areas using atomic force microscopy. (2010) (8)
- Effect of stacking faults on the photoluminescence spectrum of zincblende GaN (2018) (8)
- Compositional contrast in AlxGa1−xN/GaN heterostructures using scanning spreading resistance microscopy (2007) (8)
- Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates (2019) (8)
- Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities (2018) (7)
- Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images (2009) (7)
- The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption (2013) (7)
- Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells (2016) (7)
- The effect of annealing on the surface morphology of strained and unstrained InxAl1−xN thin films (2010) (7)
- Alloy segregation at stacking faults in zincblende GaN heterostructures (2020) (7)
- Defect structures in (001) zincblende GaN/3C-SiC nucleation layers (2021) (7)
- SCM and SIMS investigations of unintentional doping in III-nitrides (2015) (7)
- The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method (2014) (7)
- The Use of Spatial Analysis Techniques in Defect and Nanostructure Studies (2010) (7)
- Preparation of InAs(0 0 1) surface for spin injection via a chemical route (2007) (6)
- Application of highly silicon-doped marker layers in the investigation of unintentional doping in GaN on sapphire. (2010) (6)
- Materials challenges for devices based on single, self-assembled InGaN quantum dots (2007) (6)
- Temperature-dependent fine structure splitting in InGaN quantum dots (2017) (6)
- Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon (2021) (6)
- Atom probe extended to AlGaN: three‐dimensional imaging of a Mg‐doped AlGaN/GaN superlattice (2010) (6)
- Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells (2018) (6)
- Investigation of optimum growth conditions of InAlN for application in distributed Bragg reflectors (2010) (6)
- Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates (2019) (6)
- Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source (2016) (6)
- Nitride quantum light sources (2016) (6)
- High‐temperature performance of non‐polar (11–20) InGaN quantum dots grown by a quasi‐two‐temperature method (2017) (6)
- The impact of growth parameters on trench defects in InGaN/GaN quantum wells (2014) (6)
- Carrier distributions in InGaN/GaN light‐emitting diodes (2015) (6)
- Surface terracing on ferritic stainless-steel fibres and potential relevance to in vitro cell growth (2009) (5)
- InGaN super-lattice growth for fabrication of quantum dot containing microdisks (2011) (5)
- Gross well‐width fluctuations in InGaN quantum wells (2008) (5)
- Photoluminescence efficiency of zincblende InGaN/GaN quantum wells (2021) (5)
- Stacking fault-associated polarized surface-emitted photoluminescence from zincblende InGaN/GaN quantum wells (2020) (5)
- Pure single-photon emission from an InGaN/GaN quantum dot (2021) (5)
- A Review of Barriers Women Face in Research Funding Processes in the UK (2019) (5)
- Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers (2015) (5)
- X‐ray reflectivity method for the characterization of InGaN/GaN quantum well interface (2017) (5)
- A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates (2016) (5)
- Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures (2016) (5)
- Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0) (2016) (5)
- Defects in III-nitride microdisk cavities (2017) (4)
- Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1−xN nucleation layers (2022) (4)
- Method for inferring the mechanical strain of GaN-on-Si epitaxial layers using optical profilometry and finite element analysis (2021) (4)
- Studies on the Kinetics of Erythropoiesis: A Model of the Erythron (2008) (4)
- Optical emission from focused ion beam milled halide perovskite device cross‐sections (2022) (4)
- Growth of InGaN quantum dots with AlGaN barrier layers via modified droplet epitaxy (2013) (4)
- Progress in atomic layer deposited α-Ga2O3 materials and solar-blind detectors (2021) (4)
- Microscopy of defects in semiconductors (2019) (4)
- Towards a better understanding of nano-islands formed during atmospheric pressure MOVPE (2006) (4)
- Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength (2019) (4)
- Insights into the growth mechanism of InxGa1−xN epitaxial nanostructures formed using a silane predose (2008) (4)
- Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells (2012) (4)
- Cavity Enhancement of Single Quantum Dot Emission in the Blue (2009) (4)
- Characterisation of InGaN by Photoconductive Atomic Force Microscopy (2018) (4)
- Erratum: “Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction” [J. Appl. Phys. 114, 053520 (2013)] (2013) (4)
- Photoluminescence studies of exciton recombination and dephasing in single InGaN quantum dots (2004) (4)
- Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates (2015) (3)
- Molecular beam epitaxy of free‐standing bulk wurtzite AlxGa1‐xN layers using a highly efficient RF plasma source (2016) (3)
- Directly correlated microscopy of trench defects in InGaN quantum wells. (2021) (3)
- Low temperature growth and optical properties of α-Ga 2 O 3 deposited on sapphire by plasma enhanced atomic layer deposition. (2019) (3)
- Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates (2019) (3)
- The role of strain in controlling the surface morphology of AlxGa1−xN following in situ treatment with SiH4 and NH3 (2008) (3)
- The Puzzle of Exciton Localisation in GaN-Based Structures: TEM, AFM and 3D APFIM Hold the Key (2008) (3)
- Three methods for the growth of InGaN nanostructures by MOVPE (2006) (3)
- Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells (2018) (3)
- Influence of Al x Ga1−x N nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001) (2022) (3)
- On-Chip Thermal Insulation Using Porous GaN (2018) (3)
- Three-Dimensional Atom Probe Characterisation of III-Nitride Quantum Well Structures (2008) (3)
- Study of Ti contacts to corundum α-Ga2O3 (2021) (3)
- Growth of non-polar InGaN quantum dots with an underlying AlN/GaN distributed Bragg reflector by metal-organic vapour phase epitaxy (2015) (3)
- Gender issues in fundamental physics: Strumia's bibliometric analysis fails to account for key confounders and confuses correlation with causation (2020) (3)
- Characterization of buried interfaces using Ga Kα hard X-ray photoelectron spectroscopy (HAXPES). (2022) (2)
- Dismantling barriers faced by women in STEM (2022) (2)
- Gallium nitride based visible light emitting diodes (2016) (2)
- High excitation density recombination dynamics in InGaN/GaN quantum well structures in the droop regime (2014) (2)
- Fabrication and transfer printing basedintegration of free-standing GaN membranemicro-lenses onto semiconductor chips (2022) (2)
- The role of rough surfaces in quantitative ADF imaging of gallium nitride-based materials (2010) (2)
- Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniques. (2020) (2)
- Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a ‐plane GaN (2010) (2)
- Publisher's Note: ``Low temperature growth of ultra-high mass density carbon nanotube forests on conductive supports'' [Appl. Phys. Lett. 103, 073116 (2013)] (2013) (2)
- Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced. (2021) (2)
- The negligible effects of miscut on indium aluminium nitride growth (2012) (2)
- Experimental and theoretical analyses of strongly polarized photon emission from non-polar InGaN quantum dots (2016) (2)
- Sodium Diffuses from Glass Substrates through P1 Lines and Passivates Defects in Perovskite Solar Modules (2022) (2)
- Atom Probe Tomography Studies of GaN-Based Semiconductor Materials (2009) (2)
- Towards a better understanding of trench defects in InGaN/GaN quantum wells (2013) (2)
- Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence. (2021) (2)
- Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors (2018) (2)
- The effect of thermal annealing on the optical properties of Mg-doped zincblende GaN epilayers (2021) (2)
- Effect of growth temperature and V / III-ratio on the surface morphology of MOVPE-grown cubic zincblende (2018) (2)
- Cubic GaN and InGaN/GaN quantum wells (2022) (2)
- Optimized Undergraduate Thermal Analysis of Cube Satellites (2015) (2)
- Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells (2021) (2)
- Research Data Supporting "Structural and optical properties of (11-22) InGaN quantum wells compared to (0001) and (11-20)" (2016) (2)
- Non-linear excitation and correlation studies of single InGaN quantum dots (2009) (2)
- Difference in linear polarization of biaxially strained InxGa1-xN alloys on nonpolar a-plane and m-plane GaN (2015) (2)
- Dynamics of carrier redistribution processes in InGaN/GaN quantum well structures (2014) (2)
- The impact of ScOxNy interlayers on unintentional doping and threading dislocations in GaN (2010) (2)
- Sequential plan-view imaging of sub-surface structures in the transmission electron microscope (2020) (2)
- Structural characterization of porous GaN distributed Bragg reflectors using x-ray diffraction (2019) (2)
- Characterisation of In x Al 1-x N Epilayers Grown on GaN (2008) (2)
- Decreased Fast Time Scale Spectral Diffusion of a Nonpolar InGaN Quantum Dot (2021) (1)
- Quantum Well Network Structures: Investigating Long-Range Thickness Fluctuations in Single InGaN/GaN Quantum Wells (2005) (1)
- Structure and composition of non-polar (11-20) InGaN nanorings grown by modified droplet epitaxy (Phys. Status Solidi B 5/2016) (2016) (1)
- Calibration and Applications of Scanning Capacitance Microscopy: n-Type GaN (2008) (1)
- Self-catalytic growth of gallium nitride nanoneedles under Garich conditions (2005) (1)
- Time‐integrated and time‐resolved photoluminescence studies of InGaN quantum dots (2004) (1)
- Scanning capacitance microscopy as a tool for the assessment of unintentional doping in GaN (2009) (1)
- Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors (2014) (1)
- Optical cavity efficacy and lasing of focused ion beam milled GaN/InGaN micropillars (2012) (1)
- Structure and magnetic properties of an epitaxial Fe(110)/MgO(111)/GaN(0001) heterostructure (2018) (1)
- Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs (2016) (1)
- Applications, Environmental Impact and Microstructure of Light-Emitting Diodes* (2007) (1)
- Efficient and Bright Deep-red Light-emitting Diodes Based on a Lateral 0D/3D perovskite Heterostructure. (2022) (1)
- An ultrafast polarised single photon source at 220 K (2016) (1)
- Assessment of scanning spreading resistance microscopy for application to n‐type GaN (2008) (1)
- Cathodoluminescence Study of 68 MeV Proton-Irradiated Ultra-Thin GaAs Solar Cells (2020) (1)
- Non-polar nitride single-photon sources (2020) (1)
- Transfer printed multi-color integrated devices for visible light communication applications (2016) (1)
- Comment on: Three-dimensional atom probe studies of an InxGa1- xN/GaN multiple quantum well structure : Assessment of possible indium clustering. Authors' reply (2007) (1)
- 3D Atom Probe Analysis of Quantum Well and Quantum Dot Materials (2007) (1)
- Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowth (2010) (1)
- Now the Kitchen is in the Dock (2002) (1)
- Search for charged Higgs decays of the top quark using hadronic tau decays (2008) (1)
- Multimicroscopy of cross-section zincblende GaN LED heterostructure (2021) (1)
- Structure and composition of non‐polar (11‐20) InGaN nanorings grown by modified droplet epitaxy (2016) (1)
- The mean inner potential of GaN measured from nanowires using off-axis electron holography (2005) (1)
- Using pulsed mode scanning electron microscopy for cathodoluminescence studies on hybrid perovskite films (2021) (1)
- Integration of single GaN micro-lenses with high index semiconductors by transfer printing (2022) (0)
- The Effect of Silane Treatment of Al x Ga 1−x N Surfaces (2008) (0)
- Back Cover (Phys. Status Solidi A 11/2009) (2009) (0)
- LED applications of electrochemical sub-surface porosification of nitrides (Conference Presentation) (2023) (0)
- Progress in atomic layer deposited (cid:11) -Ga 2 O 3 materials and solar-blind detectors (2021) (0)
- Multi-modal microscopy and spectroscopy of wide band gap semiconductors (2020) (0)
- Research data supporting: Porous AlGaN-based ultraviolet distributed Bragg reflectors. (2018) (0)
- Low temperature growth of ultra-high mass density carbon nanotube forests on conductive supports (vol 103, 073116, 2013) (2013) (0)
- Determination of carrier concentration and quantum efficiency in InGaN/GaN quantum wells using photomodulated reflectivity (Conference Presentation) (2020) (0)
- Advanced Transfer Printing With In-Situ Optical Monitoring for the Integration of Micron-Scale Devices (2023) (0)
- Research data supporting "Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN" (2018) (0)
- Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time-resolved terahertz and photoluminescence spectroscopy (2016) (0)
- Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD (2023) (0)
- Optical studies on InxGa1-xN quantum disks (2011) (0)
- Measurement of the power dependence of spectral diffusion from a single InGaN quantum dot (2019) (0)
- Complications in silane-assisted GaN nanowire growth (2023) (0)
- Research data supporting "Dislocations in AlGaN: core structure, atom segregation and optical properties" (2017) (0)
- Optical Properties of Room Temperature Single Photon Emitters in GaN (2019) (0)
- Microphotoluminescence studies of single InGaN quantum dots (0)
- Erratum (2009) (0)
- Development of low dislocation density GaN for 380nm LEDs (2005) (0)
- Heteroepitaxial growth of InN islands on GaN(0001) and Si(111): a combined STM / AFM study (2018) (0)
- Compositional Mapping of the AlGaN Alloy Composition in Graded Buffer Structures using Cathodoluminescence (2023) (0)
- Nucleation of GaN/AlN quantum dots (2003) (0)
- Research data supporting"Nanoscopic insights into the effect of silicon on core-shell InGaN/GaN nanorods: Luminescence, composition, and structure" (2018) (0)
- Publisher Correction: Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells (2020) (0)
- Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties (2018) (0)
- Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopy (2023) (0)
- The atomic structure of GaN-based quantum wells and interfaces (2008) (0)
- Erratum: Surface terracing on ferritic stainless-steel fibres and potential relevance to in vitro cell growth (Philosophical (2009) Magazine 89:26 (2285-2303)) (2009) (0)
- Time-resolved dynamics in single InGaN quantum dots (Invited Paper) (2005) (0)
- Core–Shell Nanorods as Ultraviolet Light-Emitting Diodes (2023) (0)
- Three-photon excitation of quantum two-level systems (2022) (0)
- Magnetization and magnetoresistance of Ni/nanoporous-GaN composites (2021) (0)
- Quantification of unintentional doping in non‐polar GaN using scanning capacitance microscopy (2010) (0)
- Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs (2018) (0)
- Research Data Supporting: The relationship between the three-dimensional structure of porous GaN distributed Bragg reflectors and their birefringence (2020) (0)
- Research data supporting “Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold” (2016) (0)
- The effect of Si on the growth mode of GaN (2006) (0)
- Cathodoluminescence to Elucidate the Nanostructure of Hybrid Halide Perovskites: Is It Possible? (2022) (0)
- Magnetic Properties of Nickel Electrodeposited on Porous Gan Substrates with Infiltrated and Laminated Connectivity (2021) (0)
- AN INTRODUCTION TO SCANNING PROBE MICROSCOPY OF SEMICONDUCTORS WITH CASE STUDIES CONCERNING GALLIUM NITRIDE AND RELATED MATERIALS (2011) (0)
- Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes (2005) (0)
- Resonant excitation of quantum emitters in gallium nitride (2018) (0)
- Protective Package for a Gamma-Ray Detector (1985) (0)
- Research data supporting "Carrier Localization in the Vicinity of Dislocations in InGaN" (2016) (0)
- Let’s fix the system, not the scientists (2020) (0)
- Structural and optical properties of ( 11 2̅ 2 ) InGaN quantum wells compared to ( 0001 ) and ( 11 2̅ 0 ) (2016) (0)
- Properties of GaN nanowires with ScxGa1−xN insertion (2017) (0)
- Structural Characterization of Quantum Dots (2007) (0)
- Dielectric behaviour of plasma hydrogenated TiO2/cyanoethylated cellulose nanocomposites. (2023) (0)
- Looking Inside the Fascinating Nanoworld Controlling Light Emission from InGaN/GaN Quantum Well Devices (2010) (0)
- Effect of Micron-scale Photoluminescence Variation on Droop Measurements in InGaN/GaN Quantum Wells (2021) (0)
- Research data supporting "X-ray reflectivity method for the characterisation of InGaN/GaN quantum well interface" (2016) (0)
- Ni/Au contacts to corundum α-Ga2O3 (2023) (0)
- Theoretical and experimental analyses of strongly polarized photon emission from non-polar InGaN quantum dots (2016) (0)
- Nitride Single Photon Sources (2018) (0)
- Growth and characterisation of InGaN/GaN and InGaN/InGaN MQWs emitting at 540 nm (2005) (0)
- Simulation of the quantum-confined Stark effect in a single InGaN quantum dot (2005) (0)
- Movpe Studies of Zincblende Gan on 3c-Sic/Si(001) (2023) (0)
- Application of Atom Probe Tomography to Nitride Semiconductors (2017) (0)
- Q-factor measurements on planar nitride cavities (2010) (0)
- Reduction of radiative lifetime and slow-timescale spectral diffusion in InGaN polarized single-photon sources (2019) (0)
- Microstructural characterisation of a prototype layer structure for a GaN-based photonic crystal cavity (2010) (0)
- Influence of AlxGa1−xN nucleation layers on MOVPE-grown zincblende GaN (2022) (0)
- Teaching for Equity: How Do We Do It?. (2018) (0)
- Stable Speckle Patterns for Nano-scale Strain Mapping up to 700 °C (2017) (0)
- The use of nucleic acid-based methods in the detection and identification of plant pathogens (1993) (0)
- Essentials of cardiology, 2nd edition: A.D. Timmis and A.W. Nathan Blackwell Scientific Publications, Oxford, 1993; 351 pp.; stg£16.95; ISBN 0-632-03367-3 (1993) (0)
- Vitellogenine (1) : biologie (2009) (0)
- Structural and optical properties of (11$\bar 2$2) InGaN quantum wells compared to (0001) and (11$\bar 2$0) (2016) (0)
- Racism, equity and inclusion in research funding (2021) (0)
- Deterministic optical polarisation in nitride quantum dots at thermoelectrically cooled temperatures (2017) (0)
- Three-Photon Excitation of InGaN Quantum Dots. (2023) (0)
- Research data supporting "Structural, electronic and optical properties of m-plane (In,Ga)N/GaN quantum wells" (2015) (0)
- Evolution of InGaN/GaN nanostructures and wetting layers during annealing (2005) (0)
- Optical Studies of Non-linear Absorption in Single InGaN/GaN Quantum Dots (2007) (0)
- Common methods for the preparation of clean A- and B-type GaN surfaces assessed by STM, RHEED and XPS (2018) (0)
- Research data supporting "Atomic layer deposited α-Ga2O3 solar-blind photodetectors" (2019) (0)
- 3D Perovskite Passivation with a Benzotriazole-Based 2D Interlayer for High-Efficiency Solar Cells (2023) (0)
- Point Defects in InGaN/GaN Core–Shell Nanorods: Role of the Regrowth Interface (2021) (0)
- Publisher Correction: Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells (2020) (0)
- Research data supporting structural impact on the nanoscale optical properties of InGaN core-shell nanorods (2017) (0)
- Terahertz dielectric properties of free-standing non-polar GaN (2015) (0)
- Photocurrent detection of radially polarized optical vortex with hot electrons in Au/GaN (2022) (0)
- Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells (2013) (0)
- Data associated with 'Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells: Insights from theory and experiment' (2019) (0)
- Research data supporting "Growth of non-polar InGaN quantum dots with an underlying AlN/GaN distributed Bragg reflector by metal-organic vapour phase epitaxy" (2015) (0)
- Vitellogenine (2) : biologie (2009) (0)
- Breakdown of the green gap in (0001) InGaN LEDs (2016) (0)
- Research data supporting "Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence" (2016) (0)
- Terahertz generation in gallium nitride quantum wells (2019) (0)
- Magnetization and magnetoresistance of infiltrated and coated porous-GaN/nickel composites (2021) (0)
- SiH 4 exposure of GaN surfaces: A useful tool for highlighting dislocations (2005) (0)
- Dislocation-induced structural and luminescence degradation in InAs quantum dot emitters on silicon (2023) (0)
- Research data supporting "α-Ga2O3 grown by low temperature atomic layer deposition on sapphire" (2018) (0)
- Evaluating Common Electronic Components and GaN HEMTs Under Cryogenic Conditions (2021) (0)
- Research data supporting "The microstructure of non-polar a-plane (11-20) InGaN quantum wells" (2016) (0)
- Non-polar Nitride Single-Photon Sources-Revised final (2020) (0)
- Structure and composition of non-polar ( 11-20 ) InGaN nanorings grown by modi fi ed droplet epitaxy (2016) (0)
- Combined SEM-CL and STEM investigation of green InGaN quantum wells (2021) (0)
- Radiation effects in ultra-thin GaAs solar cells (2022) (0)
- Measurement of the Temporal Scale of the Spectral Diffusion from an InGaN Quantum Dot (2018) (0)
- Effect of wavelength and defect density on the efficiency of InGaN based light emitting diodes (2017) (0)
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