Rajaram J. Bhat

Rajaram J. Bhat's AcademicInfluence.com Rankings

Rajaram J. Bhat

Physics

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Physics

Rajaram J. Bhat's Degrees

PhD Physics University of California, Berkeley
Masters Physics University of California, Berkeley
Bachelors Physics University of California, Berkeley

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Rajaram J. Bhat's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Extreme selectivity in the lift‐off of epitaxial GaAs films (1987) (798)
Optical properties of AlxGa1−x As (1986) (713)
Light extraction from optically pumped light-emitting diode by thin-slab photonic crystals (1999) (332)
Nearly ideal electronic properties of sulfide coated GaAs surfaces (1987) (305)
Spontaneous emission extraction and Purcell enhancement from thin-film 2-D photonic crystals (1999) (301)
High-performance uncooled 1.3-/spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications (1994) (287)
Organometallic Vapor Phase Epitaxy (1992) (210)
Wavelength conversion by difference frequency generation in AlGaAs waveguides with periodic domain inversion achieved by wafer bonding (1996) (190)
Single quantum wire semiconductor lasers (1989) (166)
Surface Recombination Measurements on III-V Candidate Materials for Nanostructure Light-Emitting Diodes (2000) (144)
Quasi‐phase‐matched second‐harmonic generation in AlGaAs waveguides with periodic domain inversion achieved by wafer‐bonding (1995) (144)
Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substrates (1991) (137)
Patterned quantum well heterostructures grown by OMCVD on non-planar substrates: Applications to extremely narrow SQW lasers (1988) (131)
Monolithic integration of multiwavelength compressive-strained multiquantum-well distributed-feedback laser array with star coupler and optical amplifiers (1992) (124)
Monolithic InP/InGaAsP/InP Grating Spectrometer for the 1.48-1.56 μm Wavelength Range (1991) (106)
Double heterostructure GaAs/AlGaAs thin film diode lasers on glass substrates (1989) (100)
Carrier capture and quantum confinement in GaAs/AlGaAs quantum wire lasers grown on V‐grooved substrates (1992) (96)
Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates (2009) (95)
Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substrates (1991) (90)
Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangement (1993) (87)
Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfaces (1989) (87)
Long-Wavelength Vertical-Cavity Surface-Emitting Lasers on InP With Lattice Matched AlGaInAs–InP DBR Grown by MOCVD (2005) (85)
Growth of high‐quality GaAs using trimethylgallium and diethylarsine (1987) (79)
Gallium Indium Nitride-Based Green Lasers (2012) (78)
Low‐loss single‐mode GaAs/AlGaAs optical waveguides grown by organometallic vapor phase epitaxy (1987) (77)
Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition (1998) (76)
Low threshold 1.5 mu m tensile-strained single quantum well lasers (1991) (75)
Use of multimode interference couplers to broaden the passband of wavelength-dispersive integrated WDM filters (1996) (73)
Enhanced electronic properties of GaAs surfaces chemically passivated by selenium reactions (1990) (73)
Low-threshold 1.5 mu m compressive-strained multiple- and single-quantum-well lasers (1991) (72)
Current status of selective area epitaxy by OMCVD (1992) (69)
Growth of high quality AlInAs by low pressure organometallic chemical vapor deposition for high speed and optoelectronic device applications (1991) (69)
A study on the reliability of indium solder die bonding of high power semiconductor lasers (2006) (68)
In situ determination of free‐carrier concentrations by reflectance difference spectroscopy (1991) (68)
Dose‐dependent mixing of AlAs‐GaAs superlattices by Si ion implantation (1986) (67)
Multiwavelength DFB Laser Array Transmitters for ONTC Reconfigurable Optical Network Testbed (Invited Paper). (1996) (67)
Strain-induced confinement of carriers to quantum wires and dots within an InGaAs-InP quantum well (1989) (65)
Long-wavelength resonant vertical-cavity LED/photodetector with a 75-nm tuning range (1997) (63)
Simultaneous Multiple Wavelength Operation of a Multistripe Array Grating Integrated Cavity Laser (1993) (60)
An investigation of the optoelectronic response of GaAs/InGaAs MSM photodetectors (1988) (60)
Edge-emitting lasers with short-period semiconductor/air distributed Bragg reflector mirrors (1997) (60)
Multistripe Array Grating Integrated Cavity (MAGIC) Laser: A New Semiconductor Laser for WDM Applications (1992) (58)
Nearly ideal InP/In0.53Ga0.47As heterojunction regrowth on chemically prepared In0.53Ga0.47As surfaces (1992) (58)
InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon‐doped base grown by organometallic chemical vapor deposition (1996) (57)
Arsenic dimers and multilayers on (001)GaAs surfaces in atmospheric pressure organometallic chemical vapor deposition (1992) (57)
Reflectance–difference studies of organometallic chemical vapor deposition growth transients on (001) GaAs (1989) (57)
1.5 mu m compressive-strained multiquantum-well 20-wavelength distributed-feedback laser arrays (1992) (56)
High‐performance InGaAs photodetectors on Si and GaAs substrates (1995) (56)
Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes (2011) (54)
Quantum wire lasers by OMCVD growth on nonplanar substrates (1991) (54)
Two‐photon absorption and self‐phase modulation in InGaAsP/InP multi‐quantum‐well waveguides (1991) (52)
Thermal management strategies for high power semiconductor pump lasers (2006) (52)
InGaAs/InP superlattice mixing induced by Zn or Si diffusion (1988) (52)
Monolithic InP-based grating spectrometer for wavelength-division multiplexed systems at 1•5 μm (1991) (52)
Measurement of nonradiative Auger and radiative recombination rates in strained‐layer quantum‐well systems (1993) (51)
High-performance uncooled 1.3-µm AlxGayIn1-x-yAs/InP strained-layer quantum-well lasers for fiber-in-the-loop applications (1994) (50)
Wavelength-Selectable Laser Emission from a Multistripe Array Grating Integrated Cavity Laser (1992) (49)
High-speed performance of OMCVD grown InAlAs/InGaAs MSM photodetectors at 1.5 mu m and 1.3 mu m wavelengths (1989) (49)
Lateral and longitudinal patterning of semiconductor structures by crystal growth on nonplanar and dielectric-masked GaAs substrates: application to thickness-modulated waveguide structures (1991) (49)
Polarisation-independent InP arrayed waveguide filter using square cross-section waveguides (1996) (45)
Low threshold, room temperature pulsed operation of 1.5 /spl mu/m vertical-cavity surface-emitting lasers with an optimized multi-quantum well active layer (1994) (45)
Birefringent channel waveguides defined by impurity‐induced superlattice disordering (1988) (45)
Wavelength accuracy and output power of multiwavelength DFB laser arrays with integrated star couplers and optical amplifiers (1996) (42)
107-mW low-noise green-light emission by frequency doubling of a reliable 1060-nm DFB semiconductor laser diode (2006) (42)
Generation of macroscopic steps on patterned (100) vicinal GaAs surfaces (1989) (42)
The growth and characterization of AlGaAs using dimethyl aluminum hydride (1986) (42)
Very low threshold current density 1.5 μm GaInAs/AlGaInAs graded‐index separate‐confinement‐heterostructure strained quantum well laser diodes grown by organometallic chemical vapor deposition (1991) (41)
0.98-/spl mu/m multiple-quantum-well tunneling injection laser with 98-GHz intrinsic modulation bandwidth (1997) (41)
Spatial mode structure of broad‐area semiconductor quantum well lasers (1989) (41)
Survey of defect‐mediated recombination lifetimes in GaAs epilayers grown by different methods (1987) (41)
LATERAL OXIDATION OF INALAS IN INP-BASED HETEROSTRUCTURES FOR LONG WAVELENGTH VERTICAL CAVITY SURFACE EMITTING LASER APPLICATIONS (1998) (40)
Etching of InP by HCl in an OMVPE reactor (1991) (40)
Growth of GaAs quantum wire arrays by organometallic chemical vapor deposition on submicron gratings (1990) (40)
Efficient vertical coupling of photodiodes to InGaAsP rib waveguides (1991) (39)
Multiwavelength DFB laser arrays with integrated combiner and optical amplifier for WDM optical networks (1997) (39)
InAlAs/InGaAs/InP MODFET's with uniform threshold voltage obtained by selective wet gate recess (1992) (39)
In situ monitoring of crystal growth by reflectance difference spectroscopy (1991) (39)
Quantum wire heterostructure for optoelectronic applications (1992) (38)
Selective organometallic vapor phase epitaxy of Ga and In compounds : a comparison of TMIn and TEGa versus TMIn and TMGa (1993) (38)
Studies on the selective OMVPE of (Ga,In)/(As,P) (1992) (38)
Atomic layer epitaxy on (001) GaAs: Real‐time spectroscopy (1992) (37)
500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells (2009) (37)
High-power high-Modulation-speed 1060-nm DBR lasers for Green-light emission (2006) (37)
High‐frequency performance of InGaAs metal‐semiconductor‐metal photodetectors at 1.55 and 1.3 μm wavelengths (1989) (36)
Thermal management strategies for high power semiconductor pump lasers (2004) (36)
Optically monitoring and controlling epitaxial growth (1992) (35)
Submilliampere-threshold 1.5- mu m strained-layer multiple quantum well lasers (1990) (35)
OMCVD growth of GaAs and AlGaAs using a solid as source (1985) (34)
Two-dimensional quantum confinement in multiple quantum wire lasers grown by OMCVD on V-grooved substrates (1992) (34)
Highly reliable high-power 980-nm pump laser (2004) (33)
Cavity length and doping dependence of 1.5- mu m GaInAs/GaInAsP multiple quantum well laser characteristics (1990) (32)
Nanostructure fabrication in InP and related compounds (1990) (32)
Evaluation of single ohmic metallisations for contacting both p- and n-type GaInAs (1990) (31)
Selective area growth of InGaAsP by OMVPE (1992) (30)
High sensitivity autocorrelation using two-photon absorption in InGaAsP waveguides (1995) (30)
Process dependence of AlAs/GaAs superlattice mixing induced by silicon implantation (1987) (27)
Application of indium-tin-oxide with improved transmittance at 1.3 mu m for MSM photodetectors (1993) (27)
Atomic layer epitaxy of device quality GaAs (1989) (26)
Optical absorption of Mg-doped layers and InGaN quantum wells on c-plane and semipolar GaN structures (2013) (26)
Organometallic chemical vapor deposition of InP/InGaAsP on nonplanar InP substrates: Application to multiple quantum well lasers (1990) (25)
OMCVD growth of InP, InGaAs, and InGaAsP on (110) InP substrates (1992) (25)
Reduced optical waveguide losses of a partially disordered GaAs/AlGaAs single quantum well laser structure for photonic integrated circuits (1988) (25)
High performance GaAs MESFETs grown on InP substrates by MOCVD (1988) (25)
High-speed tunnel-injection quantum well and quantum dot lasers (1998) (24)
Low-loss multiple quantum well GaInAs/InP optical waveguides (1989) (24)
High-performance 980-nm ridge waveguide lasers with a nearly circular beam (2004) (24)
Reflectance-difference studies of organometallic chemical-vapor-deposition growth transients on (001) GaAs (1989) (24)
Impact of Carrier Transport on Aquamarine–Green Laser Performance (2010) (23)
Miniature integrated optical beam-splitter in AlGaAs/GaAs ridge waveguides (1987) (23)
Efficient InGaAsP/InP multiple quantum well waveguide optical phase modulator (1990) (23)
1.5 mu m GaInAsP angled-facet flared-waveguide traveling-wave laser amplifiers (1990) (23)
Vapor‐Phase Etching and Polishing of Gallium Arsenide Using Hydrogen Chloride Gas (1975) (23)
Orientation-dependent doping in organometallic chemical vapor deposition on nonplanar InP substrates: Application to double-heterostructure lasers and lateral p - n junction arrays (1990) (23)
High performance 634 nm InGaP/InGaAlP strained quantum well lasers (1991) (23)
Conversion of InP/In0.53Ga0.47As superlattices to Zn3P2/In1−xGaxAs and Zn3P2/Zn3As2 superlattices by Zn diffusion (1989) (22)
Low threshold 1.3 mu m strained-layer Al/sub x/Ga/sub y/In/sub 1-x-y/As quantum well lasers (1992) (22)
Vapor‐Phase Etching and Polishing of GaAs Using Arsenic Trichloride (1977) (21)
High-speed InP/GaInAs photodiode on sapphire substrate (1989) (21)
Photopumped long wavelength vertical‐cavity surface‐emitting lasers using strain‐compensated multiple quantum wells (1994) (21)
Multigigabit/s 1.5 mu m lambda /4-shifted DFB OEIC transmitter and its use in transmission experiments (1990) (21)
True-green (11-22) plane optically pumped laser with cleaved m-plane facets (2011) (21)
Breakdown of cyclotron resonance in semiconductor superlattices (1988) (20)
Butt‐coupled InGaAs metal‐semiconductor‐metal waveguide photodetector formed by selective area regrowth (1990) (20)
Integrated four-wavelength DFB laser array with 10 Gb/s speed and 5 nm continuous tuning range (1992) (20)
High-performance 1.3 μm AlGaInAs/InP strained quantum well lasers grown by organometallic chemical vapor deposition (1994) (20)
Oscillator strength, lifetime and degeneracy of resonantly excited bound excitons in GaAs (1986) (20)
Selective reactive ion etching of InGaAs/InAlAs heterostructures in HBr plasma (1993) (20)
10-Gb/s error-free transmission under optical reflection using isolator-free 1.3- /spl mu/m InP-based vertical-cavity surface-emitting lasers (2005) (20)
0 . 98-m Multiple-Quantum-Well Tunneling Injection Laser with 98-GHz Intrinsic Modulation Bandwidth (1998) (19)
InAlAs/InGaAs heterostructure FET's processed with selective reactive-ion-etching gate-recess technology (1993) (19)
Non-planar and masked-area epitaxy by organometallic chemical vapour deposition (1993) (19)
Polarization-independent InP-arrayed waveguide filter using square cross-section waveguides (1996) (19)
Carrier dynamics in high-speed (f/sub -3 dB/>40 GHz) 0.98-μm multiquantum-well tunneling injection lasers determined from electrical impedance measurements (1997) (18)
Internal Optical Waveguide Loss and p-Type Absorption in Blue and Green InGaN Quantum Well Laser Diodes (2010) (18)
Backside secondary ion mass spectrometry study of a Ge/Pd ohmic contact to InP (1992) (17)
High‐speed metal‐semiconductor‐metal waveguide photodetector on InP (1989) (17)
Development of semipolar laser diode (2013) (17)
1.5 mu m tensile-strained single quantum well 20-wavelength distributed feedback laser arrays (1992) (17)
Low threshold 0.98 mu m aluminium-free strained-quantum-well (1993) (17)
Experimental study of the orientation dependence of indium incorporation in GaInN (2016) (16)
Dimer formation on (001) GaAs under organometallic chemical vapor deposition growth conditions (1992) (16)
Quantum cascade emission in the III-nitride material system designed with effective interface grading (2015) (16)
60 mW Pulsed and Continuous Wave Operation of GaN-Based Semipolar Green Laser with Characteristic Temperature of 190 K (2011) (16)
Low threshold current density 1.5 mu m GaInAs/AlGaInAs graded-index separate-confinement-heterostructure quantum well laser diodes grown by metal organic chemical vapour deposition (1991) (16)
InP-based 1.5 /spl mu/m vertical cavity surface emitting laser with epitaxially grown defect-free GaAs-based distributed Bragg reflectors (1998) (16)
Low‐threshold (≤ 92 A/cm2) 1.6 μm strained‐layer single quantum well laser diodes optically pumped by a 0.8 μm laser diode (1990) (16)
A novel technique for the preservation of gratings in InP and InGaAsP and for the simultaneous preservation of InP, InGaAs, and InGaAsP in OMCVD (1991) (16)
DEPTH-DEPENDENT MIXING OF AN AlAs-GaAs SUPERLATTICE BY ION IMPLANTATION (1985) (16)
The Effect of Chloride Etching on GaAs Epitaxy Using TMG and AsH3 (1978) (15)
Dependence of doping on substrate orientation for GaAs: C grown by OMVPE (1992) (15)
OMCVD-grown InP/GaInAs heterojunction bipolar transistors (1987) (15)
High power 1060-nm raised-ridge strained single-quantum-well lasers (2004) (15)
Alloy disorder effects on the room temperature optical properties of Ga1−xInxNyAs1−y quantum wells (2005) (15)
Structure of (001) GaAs surfaces during epitaxial growth by organometallic chemical vapor deposition (1993) (14)
Reduction of zinc diffusion into the collector of InP‐based double heterojunction bipolar transistors grown by organometallic chemical vapor deposition (1994) (13)
The growth of GaInAs/InP and GaInAs/AlInAs superlattices with thin barrier layers by low pressure organometallic chemical vapor deposition (1991) (13)
Wavelength conversion by quasi-phase-matched difference frequency generation in AlGaAs waveguides (1995) (13)
Structural modification in reactive‐ion‐etched i‐InP and n+‐InP studied by Raman scattering (1993) (13)
Double quantum wire GaAs/AlGaAs diode lasers grown by organometallic chemical vapor deposition on grooved substrates (1990) (13)
1.5 μm asymmetric Fabry–Perot modulators with two distinct modulation and chirp characteristics (1998) (13)
III-nitride quantum cascade detector grown by metal organic chemical vapor deposition (2014) (13)
Structural and electronic effects of argon sputtering and reactive ion etching on In0.53Ga0.47As and In0.52Al0.48As studied by inelastic light scattering (1995) (13)
Testing of high-power semiconductor laser bars (2005) (13)
Real-Time Optical Diagnostics For Measuring And Controlling Epitaxial Growth (1993) (13)
Progress in high-power fiber lasers (2004) (13)
Reflectance-Difference Spectroscopy: A New Look At Semiconductor Crystal Growth By MBE And OMCVD (1989) (12)
1.5 µm GaInAs/AlGaInAs Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes Grown by Organometallic Chemical Vapor Deposition (1992) (12)
High speed performance of 1.5 mu m compressive-strained multiquantum-well gain-coupled distributed-feedback lasers (1993) (12)
Integration of high-speed optical taps with InP waveguides (1989) (12)
Integration of a multi-wavelength compressive-strained multi-quantum-well distributed-feedback laser array with a star coupler and optical amplifiers (1992) (12)
High-performance InP reflection-grating wavelength multiplexer (1994) (12)
Uncooled Lasers for Deployment of Fiber in the Loop (1993) (12)
Phonon‐electron interactions in the two‐dimensional electron gas in InGaAs‐InAlAs modulation‐doped field‐effect transistor structures studied by Raman scattering (1993) (11)
High-speed GaAs-on-InP long wavelength transmitter OEICs (1989) (11)
Growth of high-quality GaAs/AlAs Bragg mirrors on patterned InP-based quantum well mesa structures (1997) (11)
Composition dependence of energy gap in GaInAs alloys (1975) (11)
Extrinsic photoluminescence in coupled-well GaAs/AlGaAs superlattices (1988) (11)
High-power distributed Bragg reflector lasers for green-light generation (2006) (11)
High-temperature operation of AlGaInAs/InP lasers1994 (1995) (11)
Lasing and optical gain around 500 nm from optically pumped lasers grown on c-plane GaN substrates. (2009) (11)
MOVPE-grown InAlAs/InGaAs/InP MODFETs with very high fT (1993) (11)
Buried heterostructure 0.98 μm InGaAs/InGaAsP/InGaP lasers (1993) (11)
Real time in situ observation of (001) GaAs in OMCVD by reflectance difference spectroscopy (1992) (11)
Low-threshold 1.57-μm VC-SEL's using strain-compensated quantum wells and oxide/metal backmirror (1995) (11)
Design of guided‐wave components using growth of GaAs/AlGaAs superlattices on patterned substrates by organometallic chemical vapor deposition (1989) (10)
Cross coupled cavity semiconductor laser (1988) (10)
Some remarks on excitation spectra versus photoluminescence spectra for the evaluation of quantum wells (1988) (10)
Quantum Well Shape Modification in Quaternary Quantum Wells (1991) (10)
Optical gain and gain saturation of blue‐green InGaN quantum wells (2010) (9)
Direct determination of the ambipolar diffusion length in strained InxGa1−xAs/InP quantum wells by cathodoluminescence (1993) (9)
MULTIWAVELENGTH LIGHT SOURCE WITH INTEGRATED DFB LASER ARRAY AND STAR COUPLER FOR WDM LIGHTWAVE COMMUNICATIONS (1994) (9)
OMVPE grown GalnAs: C for HBTs (1996) (9)
Dielectrically-bonded long wavelength vertical cavity laser on GaAs substrates using strain-compensated multiple quantum wells (1994) (9)
Fabrication of InP/InGaAs photodiodes for high bit rate communication by reactive ion etching (1991) (9)
Shallow donors in extended state GaAs/(Al, Ga) As superlattices (1986) (9)
Measurement of energy band gap using an electrolyte‐semiconductor junction: Water–gallium indium arsenide alloys (1975) (9)
Waveguide integrated MSM photodetector on InP (1988) (9)
Characteristics of selective reactive ion etching of InGaAs/InAlAs heterostructures using HBr plasma (1993) (9)
Identification of donors in GaAs by resonantly excited high-field magnetospectroscopy (1989) (9)
Standing charge density waves driven by electron drift in patterned (Al, Ga)As/GaAs heterostructures (1985) (8)
Fabrication of InP‐based wavelength division multiplexing arrayed waveguide filters using chemically assisted ion beam etching (1996) (8)
Effect of multiple implants on the mixing of AlAs/GaAs superlattices (1987) (8)
High performance QCSE phase modulator for the 1.5–1.55 μm fibre band (1990) (8)
Three-dimensional interface roughness in layered semiconductor structures and its effect on intersubband transitions (2015) (8)
High power 1060 nm DBR lasers with quantum well intermixed passive sections (2005) (8)
Submilliampere threshold 1.5 /spl mu/m strained-layer multiple quantum well lasers (1990) (8)
Control of spontaneus emission in photonic crystals (1999) (8)
Four channel integrated DFB laser array with tunable wavelength spacing and 40-Gb/s signal transmission capacity (1993) (8)
1.57 mu m InGaAsP/InP surface emitting lasers by angled focus ion beam etching (1992) (8)
Integration of GaAS MESFET drivers with GaAs directional-coupler electro-optic modulators (1987) (8)
Physics and behavior of asymmetrically recessed InP-based MODFET's fabricated with an electron beam resist process (1994) (7)
MONOLITHIC InP REFLECTION-GRATING MULTIPLEXER/DEMULTIPLEXERS FOR WDM COMPONENTS OPERATING IN THE LONG WAVELENGTH FIBER BAND (1994) (7)
High-speed 1.5-µm asymmetric Fabry-Perot modulators (1995) (7)
Reliability and degradation of InAlGaN semipolar plane green lasers with relaxed InGaN waveguide core (2014) (7)
Packaging and performance of 980nm broad area semiconductor lasers (2005) (7)
1.5-µm GaInAsP angled-facet flared-waveguide traveling wave laser amplifiers (1990) (7)
Comparative Study Of GaAs Grown By Organometallic Chemical Vapor Deposition (OMCVD) Using Trimethyl And Triethyl Gallium Sources (1982) (7)
Cation diffusion in InP/In0.53Ga0.47As superlattices: strain build-up and relaxation (1991) (7)
Simultaneous wavelength conversion of 2.5-Gbit/s and 10-Gbit/s signal channels by difference-frequency generation in an AlGaAs waveguide (1998) (7)
Design and realization of a 1.55-/spl mu/m patterned vertical cavity surface emitting laser with lattice-mismatched mirror layers (1999) (7)
Selective OMVPE of GaInAs and InP using a polycrystalline InP mask (1991) (7)
Low-threshold and high-speed 1.5-µm strained-layer multiple quantum-well four-wavelength distributed-feedback laser arrays (1991) (7)
High gain InP/InGaAs heterojunction bipolar transistors grown by OMCVD (1988) (7)
Direct evidence of lateral bandgap patterning on stepped structures grown on non-planar, vicinal GaAs surfaces by cathodoluminescence investigations (1991) (7)
High power 980-nm pump lasers (2003) (6)
0.98 [micro sign]m multiquantum well tunnelling injection lasers with ultra-high modulation bandwidths (1996) (6)
Modulation characteristics of high speed (f/sub -3 dB/=20 GHz) tunneling injection InP/InGaAsP 1.55 /spl mu/m ridge waveguide lasers extracted from optical and electrical measurements (1997) (6)
Degradation‐free modulation‐doped field‐effect transistors grown by organometallic chemical vapor deposition (1985) (6)
Use of Multimode Interference Couplers to Broaden the Passband of Dispersive Integrated WDM Filters (1996) (6)
Interdiffusion and conversion of InP/In0.53Ga0.47As superlattices induced by p‐type dopants (1990) (6)
Surface reconstruction of GaAs (001) during OMCVD growth (1993) (6)
Patterned superlattice heterostructures by epitaxial growth on nonplanar GaAs substrates (1988) (5)
High-speed self-aligned InP/GaInAs double heterostructure bipolar transistor with high current-driving capability (1988) (5)
Photoluminescence studies of sidewall properties of dry-etched InGaAs/InP quantum wires (1994) (5)
Photoelectrochemical Defect Delineation in GaAs Using Hydrochloric Acid (1985) (5)
Multiwavelength DFB laser arrays for optical network testbeds (1996) (5)
Temperature dependence of the threshold current in 1.55-μm strain-compensated multiquantum-well distributed-feedback lasers (1998) (5)
Long wavelength metal-semiconductor-metal photodetectors with Ti/Au and indium-tin-oxide electrodes (1994) (5)
Fabrication and characterization of lateral InP/InGaAsP heterojunctions and bipolar transistors (1989) (5)
High quality GaAs quantum well lasers grown on InP substrates by organometallic chemical vapor deposition (1989) (5)
Introduction Part B. Ultra-efficient Solid-State Lighting: Likely Characteristics, Economic Benefits, Technological Approaches (2013) (5)
SIMS quantitative depth profiling of matrix elements in semiconductor layers (2006) (5)
High power and high efficiency single mode AlGaInAs/InP 14xx laser with high temperature operation (2002) (5)
Ge/Pd and Si/Pd/Ge/Pd Non-Alloyed Ohmic Contacts to InP Examined by Backside Secondary Ion Mass Spectrometry (1992) (4)
Depth distribution of reactive ion etching‐induced damage in InAlAs/InGaAs heterostructures evaluated by Hall measurements (1994) (4)
Low pressure OMCVD growth of GaAs on InP for FET and quantum well laser fabrication (1989) (4)
Partial Dislocations and Critical Thicknesses for Strained Layer Relaxation (1992) (4)
Sputter‐induced formation of an electron accumulation layer in In0.52Al0.48As (1994) (4)
Thin film double heterostructure GaAs lasers on glass substrates (1989) (4)
Spectrometer on chip: a monolithic WDM component (1992) (4)
Application of Indium-Tin-Oxide with Improved Transmittance at 1.3 pm for (1993) (4)
High speed monolithic WDM detector for 1.5 /spl mu/m fibre band (1995) (4)
Deep-level characterization of AlxIn1−xAs layers grown by low pressure metal-organic chemical vapor deposition (1994) (4)
Determination of trace constituents of high-purity gallium arsenide (1984) (4)
High-performance AlGaInAs/InP 14xx-nm semiconductor pump lasers for optical amplifications (2002) (4)
Relative Intensity Noise of Laser-Diode Arrays (1991) (4)
1.5 μm InGaAsP/InP vertically coupled semiconductor optical pre-amplifier (1991) (3)
High temperature operation of AlGaInAs/InP lasers (1995) (3)
Novel etching technique for a buried heterostructure GaInAs/AlGaInAs quantum‐well laser diode (1991) (3)
Noise behaviour of InAlAs/GaInAs MSM photodetectors (1990) (3)
Low-threshold and narrow-linewidth 1.5 mu m compressive-strained multiquantum-well distributed-feedback lasers (1991) (3)
A new technique for the growth of compositionally graded layers by OMCVD for novel device structures (1986) (3)
In-plane anisotropic lasing characteristics of (110)-oriented GaInAsP quantum-well lasers (2000) (3)
A Very High Speed 1.5 µ DFB OEIC Transmitter Grown by OMVPE (1990) (3)
High performance submicron pseudo-MODFETs and 2:1 multiplexers using GaAs on InP heteroepitaxial technology (1990) (3)
Highly resolved excitonic spectra in GaAs/AlGaAs superlattices grown by organometallic chemical vapor deposition (1988) (3)
Packaging and performance of high power semiconductor lasers of high heat flux up to 2000 W/cm/sup 2/ (2005) (3)
Growth and characterization of defect-free GaAs/AlAs distributed Bragg reflector mirrors on patterned InP-based heterostructures (1998) (3)
NaCl:OH- color center laser modelocked by a novel bonded saturable Bragg reflector (1998) (3)
Modulation Characteristics of High Speed ( GHz ) Tunneling Injection InP / InGaAsP 1 . 55 m Ridge Waveguide Lasers Extracted from Optical and Electrical Measurements (1998) (3)
Wavelength precision of monolithic InP grating multiplexer/demultiplexers (1994) (3)
High power 10-wavelength DFB laser arrays with integrated combiner and optical amplifier (1996) (3)
WDM transmitters using wavelength-tunable vertical-cavity lasers and resonant-cavity detectors (1996) (2)
Submilliampere-Threshold 1.5-pm S trained-Lay er Multiple Quantum Well Lasers (1990) (2)
Enhanced exciton absorption in quantum-confined Stark effect of [110]-oriented InGaAsP quantum wells (1992) (2)
Studies of In 0.53 Ga 0.47 As/InP Superlattice Mixing and Conversion (1988) (2)
High-speed 1.5-/spl mu/m asymmetric Fabry-Perot modulators (1996) (2)
Long-wavelength optoelectronic integrated circuit transmitter (Invited Paper) (1992) (2)
Low-threshold and high-speed 1.5 mu m compressive-strained multiquantum well four-wavelength distributed-feedback laser arrays (1991) (2)
Patterning of Quantum Wells by Growth on Nonplanar Substrates: Application to Quantum Wire Lasers (1990) (2)
Polarization stable 1.3 /spl mu/m InP based VCSELs grown on [311]A substrates (2005) (2)
High-speed quantum well and quantum dot lasers (1998) (2)
Kinetic Limits to Growth on GaAs by Omcvd (1989) (2)
Reactive ion etching‐induced damage in InAlAs/InGaAs heterostructure field‐effect transistors processed in HBr plasma (1994) (2)
Strained Layer Quantum Well Lasers for Optical Communications (1993) (2)
SEMICONDUCTOR QUANTUM WIRES GROWN BY OMCVD ON NONPLANAR SUBSTRATES (1992) (2)
Carrier-Injected GaInAsP/InP Directional Coupler Optical Switch with Both Tapered Velocity and Tapered Coupling (1992) (2)
Relaxation of Capped Strained Layers Via the Formation of Microtwins (1990) (2)
Cavity length dependence of K-limited bandwidth in 1.6 mu m compressive-strained quantum well lasers (1993) (2)
Backside Sims Study Of Ge/Pd Non-Alloyed Ohmic Contacts On InGaAs (1994) (2)
Selectively Excited Luminescence in GaAs (1984) (2)
Selective in situ etching of GaInAsP for improved growth interfaces (1990) (2)
Parametric wavelength conversion and cross-connect architectures for scalableall-optical networks (1998) (2)
High optical reflection resistance of 1.3-μm InP-based isolator-free VCSELs: 10-Gbps error-free transmission under reflection (2005) (2)
Enhancement and Extraction of Spontaneous Emission from 2-d Thin Film Photonic Crystals (2000) (1)
IIA-2 OMCVD Grown high gain modulation doped AlGaAs/GaAs transistors with no I-V collapse (1985) (1)
Microstructural characteristics of (110) InGaAs layers grown by OMVPE (1995) (1)
Fiber optic photoluminescence setup for spatially resolved measurements (1999) (1)
Self-assembled monolayers of Lewis bases: effects on surface and interfacial electronic properties in III-V optical semiconductors (1994) (1)
A study of the growth rate of GaSb using TEGa and TMSb or TESb (2015) (1)
Novel AlGaInAs/AlInAs lasers emitting at 1 μm (1990) (1)
200 A/cm/sup 2/ Threshold Current Density 1.5/spl mu/m Gainas/aigainas Strained-layer Grin-sch Quantum Well Laser Diodes Grown By Omcvd (1991) (1)
Integration of InP grating-based DEMUX with pin array for monolithic WDM detection (1993) (1)
1.55-μm vertical-cavity surface-emitting lasers with directly grown AlGaAs/GaAs and AlxOy /GaAs DBR mirrors (1999) (1)
A MAGIC laser for WDM applications (1992) (1)
Kinetic limits to growth on (001) and (110) GaAs by OMCVD (1990) (1)
Tunable long wavelength LED using wafer bonding and micromachining technologies (1996) (1)
GaAs/AlGaAs channel waveguides made by impurity-induced superlattice disordering (1987) (1)
Effects of Reactive Ion Etching on Phonon-Electron Interactions in Inalas-Ingaas Modulation-Doped Field-Effect Transistor Structures Studied by Raman Scattering (1993) (1)
Low pressure OMCVD growth of device quality GaAs on InP substrates for OEIC applications (1988) (1)
Erratum: ‘‘Photopumped long wavelength vertical‐cavity surface‐emitting lasers using strain‐compensated multiple quantum wells’’ [Appl. Phys. Lett. 64, 3395 (1994)] (1994) (1)
Surface-micromachined tunable resonant cavity LED using wafer bonding (1997) (1)
Miniature integrated-optic beam splitter in AIGaAs/GaAs ridge waveguides (1987) (1)
A 1.5 mu m DFB laser array with a 1 AA channel spacing set by monolithically integrated heaters (1990) (1)
Reflectance-difference spectroscopy of GaAs crystal growth by OMCVD (1990) (1)
Very high speed 1.5-µm DFB OEIC transmitter (1990) (1)
Photoluminescence measurement of sidewall damage in etched InGaAsP/lnP and GaAs/AIGaAs microstructures (1988) (1)
Thin film 2-D photonic crystals high-performance light-emitting diodes (1999) (1)
1.5-µm compressive strained MQW 20-wavelength distributed-feedback laser arrays (1992) (1)
Very low threshold 1.5 mu m GaInAs/AlGaInAs BH GRINSCH strained-layer quantum well laser diodes grown by MOCVD (1991) (1)
Variation of the morphology of strained AlGaInAs quantum wells with substrate orientation (2008) (1)
High performance In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As metal-semiconductor-metal photodetectors (1989) (1)
Structures and Reactions on (1992) (1)
High-Speed performance of 1.5-micrometer compressive-strained multiple-quantum-well gain-coupled distributed-feedback lasers (1993) (1)
Mid-infrared GaN/AlxGa1−xN Quantum Cascade detectors grown by MOCVD (2014) (1)
Integrated Multi-wavelength Light Sources for WDM Lightwave Communication Systems (1993) (1)
Recent progress on uncooled 1.3-µm lasers for loop applications (1995) (1)
High-performance 1.5 µm operation of asymmetric Fabry–Perot modulators (1994) (1)
Multi-wavelength light sources based on InP photonic integrated circuits for WDM lightwave communication systems (1993) (1)
High-speed InP/InGaAs photodiode on sapphire substrate prepared by epitaxial lift-off (1989) (1)
Progress in wavelength conversion by difference-frequency generation in AlGaAs waveguides (1997) (1)
Challenges and approaches of fabricating GaN-based green lasers (2011) (1)
On reaching the k-limited bandwidth in 1.6 /spl mu/m compressive-strained quantum well lasers (1992) (1)
Experimental investigation of auger recombination processes in strained-layer quantum-well systems (1992) (1)
Ti doping of InP and GaInAs using TiCl4 (1994) (1)
Patterned quantum well semiconductor lasers (1989) (1)
Long-wavelength strained-layer quantum-well lasers (1992) (1)
Reactive ion etching-induced damage in InAlAs/InGaAs heterostructures (1994) (1)
Reflectance-difference studies of organometallic chemical vapor deposition growth transients on (100) GaAs (1988) (1)
Atomic Layer Epitaxy: modeling Of Growth Parameters for Device Quality GaAs. (1989) (1)
Low threshold GaAs/AlGaAs patterned quantum well lasers grown by organometallic chemical vapor deposition (1989) (1)
Tem Studies of GaAs/AlGaAs Heterostructures Grown on Patterned Substrates (1987) (0)
lim AlGain ? InP Strained-Layer Quantum-Well Lasers for Subscriber Loop Applications (2017) (0)
Vertical Cavity Surface Emitting Lasers with Dielectric Mirrors (1994) (0)
Advances in monolithic InP grating-based WDM components (1995) (0)
Effect of Interface Roughness in Ultra-Thin Semiconductor Quantum Wells (2014) (0)
Threshold Current Reduction In Single And Multiple Quanturn Wire Lasers (1990) (0)
High-performance 0.15 μm-gatelength OMVPE-grown InAlAs/InGaAs MODFETS (1993) (0)
Simultaneous multiple wavelength operation of a multistripe array integrated cavity laser (1999) (0)
PATTERNED QUANTUM WELL SEMICONDUCTOR INJECTION LASERS (1988) (0)
Vertical Transport, Tunneling Cyclotron Resonance, and Saturated Mini-Band Transport in Semiconductor Superlattices (1990) (0)
Tolerance of InP polarisation-independent arrayed waveguide filters using square waveguide cores (1997) (0)
Tunable four-wavelength DFB laser array with 10-Gbit/s speed and 5-nm continuous tuning range (1992) (0)
Photoluminescence characterization of InGaAs/InP quantum dots (1994) (0)
VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM ARSENIDE USING ARSENIC TRICHLORIDE (1977) (0)
TEM Investigation of Epitaxial Growth of Semiconductor Superlattices on Structured Substrates (1986) (0)
Long wavelength VCSELs using wafer-fused GaAs/AlAs Bragg mirror and strain-compensated quantum wells (1995) (0)
The MAGIC Laser: a Monolithic WDM Source (1993) (0)
Monolithic multiwavelength lasers for WDM lightwave systems (1997) (0)
High-speed response of InAlAs/InGaAs M-S-M photodetectors at 1.3- and 1.5- mu m wavelengths: experiment and theory (1989) (0)
Monolithic WDM Sources And Detectors For The Long Wavelength Fiber Band Based On An InP Grating Multiplexer/demultiplexer (1992) (0)
Enabling optoelectronic technologies for optical networking (1996) (0)
High-reliability, high-performance, low-cost coaxial laser module at 1.3 µm for local-loop applications (1994) (0)
Field-induced filamentation between gold contacts deposited onto (001) GaAs epitaxial layers (1991) (0)
Nearly ideal InP/lnO~53 Ga,-,&s heterojunction regrowth on chemically prepared lno,53 GaO&4s surfaces (2004) (0)
Visible green generation by second-harmonic-generation in periodically domain inverted ZnCdSe waveguides (1996) (0)
Multiwavelength Distributed Feed Back Laser Array Transmitters for Optical Network Technology Consortium Reconfigurable Optical Network Testbed. (1996) (0)
High-performance 0.15 /spl mu/m-gatelength OMVPE-grown InAlAs/InGaAs MODFETs (1993) (0)
Photoelectrochemical Defect Delineation in GaAs Using Hydrochloric Acid. (1986) (0)
Strain-Compensated Multiple Quantum Wells Laser on GaAs Cavity (1994) (0)
Strain-Induced Lateral Confinement of Carriers in Semiconductor Quantum Wells (1989) (0)
Quantum-confined Stark Effect of InGaAsP Quantum Wells Grown on (110) InP Substrates (1992) (0)
Anomalous diffusion from doped oxides due to dopant depletion effects (1977) (0)
Spectrometer on a chip: InP-based integrated grating spectrograph for wavelength-multiplexed optical processing (1991) (0)
Chapter 4 – ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION FOR OPTOELECTRONIC INTEGRATED CIRCUITS (1995) (0)
Controlled In-situ Etching of GaAsInP for Improved Growth Interfaces (1989) (0)
[Invited Paper]High power 980-nm pump lasers (2003) (0)
Quasi-phasematched blue-green second-harmonic generation in ZnCdSe waveguides with patterned crystal orientation (1999) (0)
Wavelength conversion by cascaded second-order nonlinear optical interactions in AlGaAs waveguides (1999) (0)
VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM ARSENIDE USING HYDROGEN CHLORIDE GAS (1976) (0)
Tunnel injection into GaAs/AlGaAs long period superlattices (1989) (0)
1.5-µm compressive-strained multiple quantum-well waveguide detectors for coherent polarization-diversified receivers (1991) (0)
Vacancy-enhanced interdiffusion of quaternary quantum wells (1992) (0)
Theory of Thermocells Transported Entropies, and Heat of Transfer in Sulfate Mixtures (1994) (0)
High-temperature operation of AlGalnAs/InP lasers1994 (1996) (0)
Simultaneous multiwavelength/singie-output emission from a multi-stripe array grating integrated cavity laser (1993) (0)
Strain-compensated type-II asymmetric quantum wells for wavelength converter applications (1995) (0)
Low-threshold and narrow-linewidth 1.5-µm compressive-strained multiple-quantum-well-distributed-feedback lasers (1991) (0)
Microfabrication of vertical-cavity surface-emitting laser cavities (1994) (0)
Low-threshold current densities of 1.5-μm wavelength (110) GaInAs(P) QW lasers along [001] direction (2000) (0)
Low-threshold buried-heterostructure 0.98-µm strained-quantum-well InGaAsP/InGaAsP/InGaP lasers (1993) (0)
Monolithic grating-based components for WDM networks (1994) (0)
Relectance-Difference-Spectroscopy Study of Surface Reactions of Organometallics and Arsine on (1992) (0)
Low Threshold 1.3 and 1.55 μm Strained Quantum Well Lasers (1992) (0)
Studies on the Selective Epitaxy of lnP, GaAs, GalnAs, and GalnP (1992) (0)
Quantum Well Lasers Using Patterned Growth (1988) (0)
InGaAs/GaAs quantum well lasers using the technology of bonding by atomic rearrangement (1993) (0)
High speed monolithically integrated metal-semiconductor-metal waveguide detector on InP (1990) (0)
High quality GaAs quantum well lasers grown on InP substrates with two orientations by OMCVD (1989) (0)
Strained InGaAs/GaAs quantum wires: modeling and optical properties (1994) (0)
Reply to “Comments on ʻExperimental study of the orientation dependence of indium incorporation in GaInN’” by Morteza Monavarian (2016) (0)
Tunneling Cyclotron Resonance in Semiconductor Superlattices (1987) (0)
Processing of InP and related compounds at nanometer dimensions (1992) (0)
Low threshold 0.98-μm strained-QW InGaAs/lnGaAsP/InGaP lasers (1992) (0)
Very Low Threshold Current OMCVD Grown AiGaInAs Buried Heterostructure Quantum Well A Novel Etching Technique (1991) (0)
Reflectance-Difference Spectroscopy: a New Real-Time, In-Situ Analysis of MBE and OMCVD Growth Surfaces. (1988) (0)
namics in High-speed (f-3 dB > 40 GHz) Multiquantum-Well Tunneling Injection asers Determined from Electrical Impedance Measurements (1997) (0)
OMCVD growth for optoelectronics (1993) (0)
Invited Low Threshold 1 . 3 and I . 55 pm Strained Quantum Well Lasers (0)
Stress Dependent Electrical Activation of Implanted Si IN GaAs - A Four Point Bending Study (1991) (0)
Reliable Impurity Identification in Inp (1993) (0)
New AlGaInAs/AlInAs lasers for pumping fiber amplifiers (1990) (0)
Waveguide Losses Of A Partially Disordered Quantum Well Laser Structure (1988) (0)
THE EFFECT OF CHLORIDE ETCHING ON GALLIUM ARSENIDE EPITAXY USING TMG AND ARSINE (1978) (0)
1 .O-mA-Threshold Uncoated Lasers by Impurity-Induced Disordering (1993) (0)
0.98pm Multiple Quantum Well 'hnneling Injection Lasers Extrapolated (1995) (0)
GaAs Fets And Novel Heterloepitaxial Quaternary Lasers Grown On InP Substrates By Organometallic Chemical Vapor Deposition (1988) (0)
OMCVD growth of strained Al/sub x/Ga/sub y/In/sub 1-x-y/As for low threshold 1.3 mu m and 1.55 mu m quantum well lasers (1992) (0)
Gain and Absorption Spectra of Quantum Wire Lasers Diodes Grown on Nonplanar Substrates (1992) (0)
GaAs-on-InP heteroepitaxial long wavelength OEIC transmitter (1989) (0)
High-power uncooled 975-nm Bragg grating stabilized thick-quantum-well lasers (2004) (0)
Patterned 1.54 /spl mu/m vertical cavity laser with mismatched defect-free mirrors (1999) (0)
Room Temperature Pulsed Operation of 1.5μm VCSELDs with an Optimized MQW Active Layer (1993) (0)
Low threshold 1.59 /spl mu/m vertical-cavity surface-emitting lasers with strain-compensated multiple quantum wells (1994) (0)
1.5-µm Tensile-strained single QW 20-wavelength distributed feedback laser arrays (1992) (0)
Observation of Hexagonal AiGaAs Grown by OMCVD (1990) (0)
Wavelength and power stabilisation of uncooled 975 nm thick quantum well lasers over 110°C temperature range (2004) (0)
Low-loss GaAs/AlGaAs ridge waveguides grown by organometallic vapor-phase epitaxy (1987) (0)

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What Schools Are Affiliated With Rajaram J. Bhat?

Rajaram J. Bhat is affiliated with the following schools:

Rensselaer Polytechnic Institute