Randall M. Feenstra
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Most Influential Person Now
American physicist
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Physics
Randall M. Feenstra's Degrees
- PhD Physics Stanford University
- Masters Physics Stanford University
- Bachelors Physics Stanford University
Why Is Randall M. Feenstra Influential?
(Suggest an Edit or Addition)According to Wikipedia, Randall M. Feenstra is a Canadian physicist. Feenstra completed a bachelor's degree in engineering physics at the University of British Columbia in 1978, followed by his master's and doctorate in applied physics at the California Institute of Technology. From 1982 to 1995 he was a research staff member at the IBM Thomas J. Watson Research Center in Yorktown Heights, New York. Since 1995, he has taught at Carnegie Mellon University, where he conducts research in semiconductors.
Randall M. Feenstra's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Tunneling spectroscopy of the Si(111)2 × 1 surface (1987) (449)
- Atom-selective imaging of the GaAs(110) surface. (1987) (444)
- Electronic structure of the Si(111)2 x 1 surface by scanning-tunneling microscopy. (1986) (432)
- Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors. (1994) (315)
- Tunneling spectroscopy of the GaAs(110) surface (1987) (314)
- Structure of GaN(0001): The laterally contracted Ga bilayer model (2000) (290)
- Reconstructions of the GaN\(0001̄\) Surface (1997) (277)
- Determination of wurtzite GaN lattice polarity based on surface reconstruction (1998) (275)
- Adatom kinetics on and below the surface: the existence of a new diffusion channel. (2003) (264)
- Reconstructions of GaN(0001) and (0001̄) surfaces: Ga-rich metallic structures (1998) (197)
- Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers (1988) (191)
- Preparation of atomically flat surfaces on silicon carbide using hydrogen etching (1998) (188)
- Graphene Nucleation Density on Copper: Fundamental Role of Background Pressure (2013) (188)
- Inversion of wurtzite GaN(0001) by exposure to magnesium (1999) (184)
- Geometric and electronic structure of antimony on the GaAs(110) surface studied by scanning tunneling microscopy. (1989) (168)
- Probing Critical Point Energies of Transition Metal Dichalcogenides: Surprising Indirect Gap of Single Layer WSe2. (2014) (162)
- Influence of misfit dislocations on the surface morphology of Si1−xGex films (1995) (153)
- Real-space observation of π -bonded chains and surface disorder on Si(111)2×1 (1986) (150)
- Scanning tunneling spectroscopy (1994) (150)
- Ultrafast transient absorption microscopy studies of carrier dynamics in epitaxial graphene. (2010) (149)
- Single-particle tunneling in doped graphene-insulator-graphene junctions (2011) (148)
- Local state density and long-range screening of adsorbed oxygen atoms on the GaAs(110) surface. (1987) (141)
- Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors. (2018) (137)
- Field effect in epitaxial graphene on a silicon carbide substrate (2007) (134)
- Interface roughness and asymmetry in InAs/GaSb superlattices studied by scanning tunneling microscopy. (1994) (131)
- Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs. (1993) (130)
- Spatially resolved mapping of electrical conductivity across individual domain (grain) boundaries in graphene. (2013) (130)
- Electrostatic potential for a hyperbolic probe tip near a semiconductor (2003) (119)
- Low-Temperature Grown III-V Materials (1995) (110)
- Spontaneous formation of indium-rich nanostructures on InGaN(0001) surfaces (2000) (110)
- Different Fermi-level pinning behavior on n- and p-type GaAs(001). (1993) (109)
- GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations (1999) (103)
- Hydrogen induced lattice expansion and effective H-H interaction in single phase PdHc (1986) (96)
- Effects of GaAs substrate misorientation on strain relaxation in InxGa1−xAs films and multilayers (1998) (94)
- Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces (2010) (91)
- Influence of tip-induced band bending on tunnelling spectra of semiconductor surfaces (2007) (88)
- Surface diffusion and phase transition on the Ge(111) surface studied by scanning tunneling microscopy. (1991) (86)
- Comprehensive structural and optical characterization of MBE grown MoSe2 on graphite, CaF2 and graphene (2015) (85)
- Quantum-Confined Electronic States Arising from the Moiré Pattern of MoS2-WSe2 Heterobilayers. (2017) (84)
- SCANNING TUNNELING SPECTROSCOPY OF MOTT-HUBBARD STATES ON THE 6H-SIC(0001)3 X 3 SURFACE (1999) (81)
- Relaxed Si0.7Ge0.3 buffer layers for high‐mobility devices (1995) (79)
- Direct imaging of dopants in GaAs with cross‐sectional scanning tunneling microscopy (1993) (79)
- Surface morphology of oxidized and ion‐etched silicon by scanning tunneling microscopy (1985) (79)
- Low-energy Electron Reflectivity from Graphene (2012) (76)
- Cross‐sectional imaging and spectroscopy of GaAs doping superlattices by scanning tunneling microscopy (1992) (74)
- Electronic states of metal atoms on the GaAs(110) surface studied by scanning tunneling microscopy. (1989) (74)
- Facet formation in strained Si1−x Gex films (1994) (72)
- SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor (2012) (71)
- Voltage-dependent scanning tunneling microscopy imaging of semiconductor surfaces (1988) (69)
- Interdiffusion, growth mechanisms, and critical currents in YBa2Cu3O7-x/PrBa2Cu3O7-x superlattices. (1991) (69)
- Proximity-induced superconducting gap in the quantum spin Hall edge state of monolayer WTe2 (2019) (65)
- Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy (2000) (65)
- Surface structural and electronic properties of cleaved single crystals of Bi2.15Sr1.7CaCu2O8+ delta compounds: A scanning tunneling microscopy study. (1989) (65)
- Reconstructions of the AlN(0001) Surface (2003) (63)
- Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on Molecular Beam Epitaxy Grown WSe2 Monolayers and Bilayers. (2016) (63)
- Adsorption and incorporation of silicon at GaN(0001) surfaces (2002) (61)
- Surface morphology of GaAs(110) by scanning tunneling microscopy. (1985) (61)
- Recent developments in surface studies of GaN and AlN (2005) (61)
- Role of Ga flux in dislocation reduction in GaN films grown on SiC(0001) (2001) (60)
- Correlations between the Hall coefficient and the superconducting transport properties of oxygen-deficient YBa2Cu3O7- delta epitaxial thin films. (1993) (60)
- Scanning tunneling microscope for low temperature, high magnetic field, and spatially resolved spectroscopy (1987) (59)
- Critical point lowering in thin PdHx films (1983) (59)
- Growth of GaN on porous SiC and GaN substrates (2003) (59)
- Scattering from strain variations in high‐mobility Si/SiGe heterostructures (1995) (58)
- Scanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs (1999) (58)
- Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices. (2016) (57)
- Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces (2002) (57)
- Reconstruction of steps on the Si(111)2 x 1 surface. (1987) (57)
- Cross-sectional scanning tunnelling microscopy of III-V semiconductor structures (1994) (56)
- Tunneling spectroscopy on compensating surface defects induced by Si doping of molecular‐beam epitaxially grown GaAs(001) (1992) (56)
- Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions (2014) (55)
- Roughness analysis of Si/SiGe heterostructures (1995) (54)
- Graphene formed on SiC under various environments: comparison of Si-face and C-face (2011) (54)
- Scanning tunneling microscopy and spectroscopy of Bi-Sr-Ca-Cu-O 2:2:1:2 high-temperature superconductors. (1991) (53)
- X-ray study of in-plane epitaxy of YBa2Cu3Ox thin films. (1989) (52)
- SymFET: A proposed symmetric graphene tunneling field effect transistor (2012) (50)
- Atomic-scale mapping of thermoelectric power on graphene: role of defects and boundaries. (2013) (50)
- Volume changes during hydrogen absorption in metals (1985) (49)
- Structure of Cs on GaAs(110) as determined by scanning tunneling microscopy (1989) (48)
- Low-Energy Electron Reflectivity of Graphene on Copper and other Substrates. (2013) (48)
- Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction (1998) (47)
- Low-temperature tunneling spectroscopy of Ge(111)c(2×8) surfaces (2005) (46)
- GROWTH OF NANOSCALE BaTiO3/SrTiO3 SUPERLATTICES BY MOLECULAR-BEAM EPITAXY (2008) (46)
- Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001) (1998) (45)
- Comparison of electronic and mechanical contrast in scanning tunneling microscopy images of semiconductor heterojunctions (1999) (45)
- Carbon-assisted chemical vapor deposition of hexagonal boron nitride (2017) (45)
- Study of interface asymmetry in InAs–GaSb heterojunctions (1995) (44)
- Atomic‐scale structure and electronic properties of GaN/GaAs superlattices (1996) (43)
- Structure of clean and arsenic-covered GaN(0 0 0 1) surfaces (2000) (43)
- Temperature Dependence of Epitaxial Graphene Formation on SiC(0001) (2009) (43)
- Morphology and Effects of Hydrogen Etching of Porous SiC (2002) (43)
- Role of oxygen vacancies in the flux-pinning mechanism, and hole-doping lattice disorder in high-current-density YBa2Cu3O7-x films. (1992) (43)
- Band Gap of the Ge(111)c(2×8) Surface by Scanning Tunneling Spectroscopy (2006) (42)
- Step Formation on Hydrogen-etched 6H-SiC{0001} Surfaces (2008) (42)
- Kinetics of the Si(111)2 × 1→ 5 × 5 and 7 × 7 transformation studied by scanning tunneling microscopy (1991) (41)
- Molecular beam epitaxial growth of MoSe2 on graphite, CaF2 and graphene (2014) (41)
- ENHANCED GROUP-V INTERMIXING IN INGAAS/INP QUANTUM WELLS STUDIED BY CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY (1999) (41)
- Fermi-level pinning at the Sb/GaAs(110) surface studied by scanning tunneling spectroscopy. (1988) (41)
- Scanning tunneling spectroscopy of oxygen adsorbates on the GaAs(110) surface (1988) (41)
- Oxidized GaN(0001) surfaces studied by scanning tunneling microscopy and spectroscopy and by first-principles theory (2006) (40)
- One dimensional metallic edges in atomically thin WSe2 induced by air exposure (2018) (40)
- Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy (2000) (39)
- Theory of graphene–insulator–graphene tunnel junctions (2014) (39)
- Low-temperature scanning tunneling spectroscopy of n-type GaAs(110) surfaces (2002) (38)
- Formation of the 5 x 5 reconstruction on cleaved Si(111) surfaces studied by scanning tunneling microscopy. (1990) (38)
- Scanning tunneling microscopy and spectroscopy of gold on the GaAs(110) surface (1989) (37)
- Arrangement of nitrogen atoms in GaAsN alloys determined by scanning tunneling microscopy (2001) (35)
- Gravimetrical determination of pressure-composition isotherms of thin PdHc films (1986) (35)
- Flat Bands and Mechanical Deformation Effects in the Moiré Superlattice of MoS2-WSe2 Heterobilayers. (2020) (34)
- Scanning tunneling microscopy and spectroscopy of cleaved and annealed Ge(111) surfaces (1991) (33)
- Imaging electronic surface states in real space on the Si(111) 2×1 surface (1987) (33)
- Local transport properties of thin bismuth films studied by scanning tunneling potentiometry. (1996) (33)
- Absorption of hydrogen in Pd-Co and Pd-U alloys☆ (1987) (32)
- Dislocation density reduction in GaN using porous SiN interlayers (2005) (32)
- Morphology of Graphene on SiC(000-1) Surfaces (2009) (31)
- Morphology and surface reconstructions of GaN(1100) surfaces (2003) (31)
- Scanning tunneling microscopy of InAs/GaSb superlattices: Subbands, interface roughness, and interface asymmetry (1994) (31)
- Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy (2001) (31)
- Energy Gap Induced by Friedel Oscillations Manifested as Transport Asymmetry at Monolayer-Bilayer Graphene Boundaries (2014) (31)
- InGaAs/InP quantum well intermixing studied by cross-sectional scanning tunneling microscopy (2001) (30)
- Size, shape, composition, and electronic properties of InAs/GaAs quantum dots by scanning tunneling microscopy and spectroscopy (2010) (30)
- Grazing incidence infrared reflectivity of La1.85Sr0.15CuO4 and NbN. (1996) (30)
- Tunneling spectroscopy of midgap states induced by arsenic precipitates in low-temperature-grown GaAs (1993) (29)
- Electronic and structural properties of a discommensurate monolayer system: GaAs(110)-(1 x 1)Bi. (1989) (29)
- Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides. (2018) (29)
- Formation of epitaxial graphene on SiC(0001) using vacuum or argon environments (2010) (29)
- Superconducting transport properties of epitaxial YBa2Cu3O7- delta thin films: A consistent description based on thermally-activated flux motion. (1992) (29)
- Band offsets of InGaP∕GaAs heterojunctions by scanning tunneling spectroscopy (2008) (28)
- Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy (1998) (28)
- Electronic states and Fermi surface properties of α-phase PdHx (1979) (28)
- Scanning tunneling microscopy and spectroscopy of the Si(111)5×5 surface (1991) (27)
- Tunneling spectroscopy of the Si ( 111 ) 2 × 1 surface (1999) (27)
- Temperature dependence of molecular beam epitaxy of GaN on SiC (0001) (1999) (27)
- Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications (2008) (26)
- Spatial variation of the observed energy gap in granular superconducting NbN films (1987) (26)
- Structure of oxygen adsorbed on the GaAs(110) surface studied using scanning-tunneling microscopy. (1987) (26)
- Evidences of electrochemical graphene functionalization and substrate dependence by Raman and scanning tunneling spectroscopies (2012) (25)
- Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy (2005) (25)
- Influence of surface states on tunneling spectra of n-type GaAs(110) surfaces (2009) (25)
- Low-energy electron reflectivity from graphene: first-principles computations and approximate models. (2012) (25)
- Scanning tunneling microscopy of the GaN(000 < ![IGNORE[$\bar{1}$]]) surface (1998) (25)
- Band gap of the Ge(111)2 × 1 and Si(111)2 × 1 surfaces by scanning tunneling spectroscopy (1991) (24)
- Structural and electronic properties of Bi/GaAs(110) (1989) (24)
- Properties of synthetic epitaxial graphene/molybdenum disulfide lateral heterostructures (2017) (24)
- Electronic states of oxidized GaN(0001) surfaces (2006) (24)
- Scanning tunneling microscopy and spectroscopy of thin metal films on the GaAs(110) surface (1990) (23)
- Studies of superconductors using a low‐temperature, high‐field scanning tunneling microscope (1988) (22)
- Isotope effects in the electronic structure of PdH_{x} and PdD_{x} from de Haasand#151;van Alphen measurements (1982) (22)
- Plasma-assisted molecular beam epitaxy of GaN on porous SiC substrates with varying porosity (2003) (22)
- Pressure-composition isotherms of thin PdHc films☆ (1987) (22)
- Interface structure of graphene on SiC(0001̄) (2011) (22)
- Coexistence of negatively and positively buckled isomers on n+-doped Si(111) − 2 × 1. (2011) (22)
- Tunneling spectroscopy of graphene and related reconstructions on SiC(0001) (2009) (22)
- Cross‐sectional scanning tunneling microscopy of epitaxial GaAs structures (1993) (21)
- Scanning tunneling microscopy of in situ cleaved and hydrogen passivated Si(110) cross-sectional surfaces (1995) (21)
- Reconstructions of GaN and InGaN surfaces (2000) (21)
- Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy (2000) (21)
- Scanning tunneling microscopy studies of Si(111)‐2×1 surfaces (1986) (20)
- Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures. (2016) (20)
- Buckling and band gap of the Ge ( 111 ) 2 × 1 surface studied by low-temperature scanning tunneling microscopy (2001) (20)
- Surface termination during GaN growth by metalorganic vapor phase epitaxy determined by ellipsometry (2003) (20)
- Distribution of nitrogen atoms in dilute GaAsN and InGaAsN alloys studied by scanning tunneling microscopy (2001) (19)
- Edge melting of the Ge(111) surface studied by scanning tunneling microscopy (1992) (19)
- Atomic scale structure of interfaces (1990) (19)
- Characterization of hexagonal boron nitride layers on nickel surfaces by low-energy electron microscopy (2016) (19)
- Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures (2015) (18)
- A Prospective: Quantitative Scanning Tunneling Spectroscopy of Semiconductor Surfaces (2009) (18)
- Cross-sectional scanning tunneling microscopy and spectroscopy of InGaP/GaAs heterojunctions (2004) (18)
- Transport limitations in tunneling spectroscopy of Ge ( 111 ) c ( 2 × 8 ) surfaces (2004) (18)
- SURFACE MORPHOLOGY OF GaN SURFACES DURING MOLECULAR BEAM EPITAXY (2000) (18)
- Dilute hydrides, deuterides and tritides of V, Nb and Ta: density measurements (1988) (18)
- Effect of interface composition and growth order on the mixed anion InAs/GaSb valence band offset (1995) (17)
- 4 – METHODS OF TUNNELING SPECTROSCOPY (1993) (17)
- Real-Space Determination of Surface Structure by Scanning Tunneling Microscopy (1987) (17)
- c-axis infrared response of Tl2Ba2Ca2Cu3O10 studied by oblique-incidence polarized-reflectivity measurements. (1994) (17)
- Growth of Gan on Porous Sic Substrates by Plasma-Assisted Molecular Beam Epitaxy (2002) (16)
- Oxygen vacancies on SrO-terminated SrTi O 3 (001 ) surfaces studied by scanning tunneling spectroscopy (2015) (16)
- Erratum: Direct imaging of dopants in GaAs with cross‐sectional scanning tunneling microscopy [Appl. Phys. Lett. 63, 2923 (1993)] (1994) (16)
- Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices (1997) (16)
- Structure and electronic spectroscopy of steps on GaAs(110) surfaces (2012) (16)
- Scanning tunneling potentiometry of semiconductor junctions (2002) (15)
- Porous Silicon Carbide and Gallium Nitride (2008) (15)
- Formation of hexagonal Boron Nitride on Graphene-covered Copper Surfaces (2015) (15)
- Scanning Tunneling Microscopy: Semiconductor Surfaces, Adsorption, and Epitaxy (1990) (14)
- Comment on "Structures of GaN(0001)bf-(2x2), bf-(4x4), and bf-(5x5) surface reconstructions" (2000) (14)
- In situ real-time studies of GaN growth on 6H-SiC(0 0 0 1) by low-energy electron microscopy (LEEM) (1998) (14)
- Voltage‐dependent imaging of antimony on the GaAs(110) surface (1988) (13)
- A comparison of spectroscopic and microscopic observations of ion-induced intermixing in InGaAs/InP quantum wells (1998) (13)
- Summary Abstract: Surface morphology of oxidized and ion‐etched silicon by scanning tunneling microscopy (1985) (13)
- UNIQUE X-RAY DIFFRACTION PATTERN AT GRAZING INCIDENCE FROM MISFIT DISLOCATIONS IN SIGE THIN FILMS (1996) (13)
- Electronic states of InAs/GaAs quantum dots by scanning tunneling spectroscopy (2010) (13)
- Hydrogen as a local probe of alloys: Nb1−yVy (1988) (12)
- Upper-critical fields of YBa2Cu3O7- delta epitaxial thin films with variable oxygen deficiency delta. (1994) (12)
- Exciton capture cross sections of indium and boron impurities in silicon (1980) (12)
- Correlation of buffer strain relaxation modes with transport properties of two‐dimensional electron gases (1996) (12)
- Contrast mechanisms in cross-sectional scanning tunneling microscopy of GaSb/GaAs type-II nanostructures (2009) (12)
- Growth of GaN on SiC(0001) by Molecular Beam Epitaxy (2001) (11)
- Isotope shifts for the P, Q, R lines in indium-doped silicon (1983) (11)
- Effects of Hydrogen on the Morphology and Electrical Properties of GaN grown by Plasma-assisted Molecular-Beam Epitaxy (2005) (11)
- Cross-sectional scanning tunneling microscopy studies of lattice-matched InGaAs/InP quantum wells: variations in growth switching sequence (2003) (11)
- Thickness characterization of atomically thin WSe2 on epitaxial graphene by low-energy electron reflectivity oscillations (2016) (11)
- Scanning Tunneling Microscopy and Spectroscopy of Arsenic Antisite Defects in GaAs (1993) (11)
- Buckling of Si and Ge(111)2×1 surfaces (2004) (11)
- Modification of CdSe resistivity by laser annealing (1979) (11)
- A study of the morphology of GaN seed layers on in situ deposited SixNy and its effect on properties of overgrown GaN epilayers (2006) (11)
- The influence of structural disorder on the hydrogen absorption in amorphous and crystalline Pd-Si alloys (1986) (11)
- Defect Reactions in GaP: (Zn,O) (1981) (11)
- Formation of metal/GaAs(110) interfaces studied by scanning tunneling microscopy (1992) (11)
- Recent developments in scanning tunneling spectroscopy of semiconductor surfaces (2001) (11)
- Thickness monitoring of graphene on SiC using low-energy electron diffraction (2010) (11)
- Scanning tunneling microscopy of InAs/GaSb superlattices with various growth conditions (1994) (10)
- Scanning tunneling microscopy and first-principles theory of the Sn/GaAs(110) surface. (1989) (10)
- Vibrational modes of oxygen in GaP including second-nearest-neighbor interactions (1983) (10)
- Pinned and unpinned step dynamics on vicinal silver (110) surfaces. (1993) (10)
- Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001) (2001) (10)
- Scanning tunneling microscopy of cleaved semiconductor surfaces (1986) (10)
- The search for residual resistivity dipoles by scanning tunneling potentiometry (1998) (10)
- Inelastic effects in low-energy electron reflectivity of two-dimensional materials (2014) (9)
- Friedel Oscillation-Induced Energy Gap Manifested as Transport Asymmetry at Monolayer-Bilayer Graphene Boundaries (2014) (9)
- Photophysics and Electronic Structure of Lateral Graphene/MoS2 and Metal/MoS2 Junctions. (2020) (9)
- Real-space observation of pi -bonded chains and surface disorder on Si(111)2 x 1. (1986) (9)
- Scanning Tunneling Microscopy (1990) (8)
- Scanning tunneling microscopy images of III–V semiconductor alloys: Strain effects (2003) (8)
- Electronic states of chemically treated SiC surfaces (2008) (8)
- Silicon on GaN(0001) and (0001̄) surfaces (2001) (8)
- Comment on "Evidence for a-b-plane coupling to longitudinal c-axis phonon in high Tc superconductors" (1993) (8)
- Growth and transport properties of thin Bi films on InP(110) (1996) (7)
- Cross-Sectional Scanning Tunneling Microscopy of III-V Semiconductor Structures (1994) (7)
- Reaction kinetics in GaP:(Zn,O) (1982) (7)
- Ultrafast transient absorption microscopy studies of carrier dynamics in epitaxial graphene (2010) (7)
- Molecular dynamics and first‐principles computations of Ga adlayers on GaN(0001) (2008) (7)
- Carrier injection and scanning tunneling microscopy at the Si(111)‐2×1 surface (1993) (7)
- Low energy electron microscopy of indium on Si(0 0 1) surfaces (2003) (7)
- The influence of the band structure of epitaxial graphene on SiC on the transistor characteristics (2009) (7)
- Substitutional mechanism for growth of hexagonal boron nitride on epitaxial graphene (2018) (6)
- Topographic and electronic structure of cleaved SrTiO3(001) surfaces (2015) (6)
- Reconstructions of the GaN ( 000 ) Surface (1999) (6)
- A Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation during High Field Etching of SiC (2006) (6)
- Summary Abstract: Structure analysis of the GaAs(110) surface by scanning tunneling microscopy (1988) (6)
- Chemically selective formation of Si-O-Al on SiGe(110) and (001) for ALD nucleation using H 2 O 2 (g) (2016) (5)
- Compositional variations in strain-compensated InGaAsP/InAsP superlattices studied by scanning tunneling microscopy (1999) (5)
- Summary Abstract: Imaging oxygen acceptor states on the GaAs(110) surface (1988) (5)
- WSe2 homojunctions and quantum dots created by patterned hydrogenation of epitaxial graphene substrates (2019) (5)
- Hot carriers in epitaxial graphene sheets with and without hydrogen intercalation: role of substrate coupling. (2014) (5)
- InGaAs∕InP quantum well intermixing studied by high-resolution x-ray diffraction and grazing incidence x-ray analysis (2005) (5)
- In-situ ellipsometry: Identification of surface terminations during GaN growth (2003) (5)
- Evidence of Electrochemical Graphene Functionalization by Raman Spectroscopy (2012) (5)
- Unexplored MBE growth mode reveals new properties of superconducting NbN (2020) (5)
- Dynamics of the Ge(111)c(2 x 8) surface studied by scanning tunneling microscopy (1993) (5)
- Formation of a Buffer Layer for Graphene on C-Face SiC{0001} (2014) (5)
- Growth and Surface Reconstructions of AlN(0001) Films (2003) (5)
- Growth of GaN on porous SiC by molecular beam epitaxy (2008) (4)
- Addendum: ‘‘Influence of misfit dislocations on the surface morphology of Si1−xGex films’’ [Appl. Phys. Lett. 66, 724 (1995)] (1995) (4)
- Electronic density-of-states from pressure-composition isotherms in metalhydrides (1986) (4)
- Anomaly in the lattice expansion of PdHx above the critical point (1984) (3)
- Gigahertz operation of epitaxial graphene transistors (2009) (3)
- Atomic force microscopy studies of SiGe films and Si/SiGe heterostructures (1995) (3)
- 2.1 Introduction to scanning tunneling microscopy of metals and semiconductor (2015) (3)
- Combined MOCVD and MBE growth of GaN on porous SiC (2003) (3)
- Charge transfer between isomer domains on n+-doped Si(111)-2 × 1: energetic stabilization (2012) (3)
- Low Energy Electron Microscopy of Indium on Si ( 001 ) Surfaces (2003) (3)
- Phonon-drag thermopower correlations to Tc in superconducting SrxNd1-xCuO2- delta : Evidence for phonon-mediated pairing in the high-Tc parent compounds. (1995) (3)
- Scanning Tunnenling Spectroscopy of Oxidized 6H-SiC Surfaces (2006) (3)
- Formation of graphene on SiC(0001¯) surfaces in disilane and neon environments (2012) (3)
- Characteristics of Interlayer Tunneling Field-Effect Transistors Computed by a “DFT-Bardeen” Method (2016) (3)
- Surface activity of magnesium during GaN molecular beam epitaxial growth (1999) (3)
- Characteristics of graphene for quantized hall effect measurements (2012) (2)
- Structural Properties of GaN films grown by Molecular Beam Epitaxy on vicinal SiC(0001) (2001) (2)
- 5.3. Gallium Arsenide (1993) (2)
- Nanometer-scale studies of nitride/arsenide heterostructures produced by nitrogen plasma exposure of GaAs (1997) (2)
- Selective Intermixing of Ion Irradiated Semiconductor Heterostructures (1998) (2)
- Magnitude of the current in 2D interlayer tunneling devices (2017) (2)
- Summary Abstract: Reconstruction of steps on the Si(111)2×1 surface (1988) (2)
- Effects of hydrogen during molecular beam epitaxy of GaN (2005) (2)
- 2.3.7 GaN, Gallium Nitride (2015) (2)
- Quantitative Determination of Nanoscale Electronic Properties of Semiconductor Surfaces by Scanning Tunnelling Spectroscopy (2011) (2)
- Diffusion of Hydrogen in Nb1−y Vy Alloys and Hydrogen as a Local Probe+ (1989) (2)
- Electron-hole exchange transitions at defects in semiconduc- tors. (1985) (2)
- Low-temperature scanning tunneling spectroscopy of semiconductor surfaces (2003) (2)
- Scanning tunneling microscopy observation of surface reconstruction of GaN on sapphire and 6H-SiC (1997) (2)
- Surface Influenced Phase Separation in Organic Thin Films on Drying (1998) (2)
- Physics of Solid Surfaces: Subvolume A (2015) (2)
- Termination-specific study of oxygen vacancy transition levels on SrTiO$_{3}$(001) surfaces by scanning tunneling spectroscopy (2015) (2)
- Theory of resonant tunneling in bilayer graphene heterostructures (2015) (2)
- Spatial Variation of Superconducting Gap: STM Measurements for NbN (1987) (1)
- Fermi-Level Pinning by Oxygen and Antimony Adsorbates on the GaAs(110) Surface by Scanning Tunneling Spectroscopy (1989) (1)
- Formation of graphene atop a Si adlayer on the C-face of SiC (2019) (1)
- Mapping the Electron Transport of Graphene Boundaries Using Scanning Tunneling Potentiometry (2013) (1)
- Roughness Analysis of Si 1-χ Ge χ Films (1994) (1)
- Reconstructions of the GaN s 0001 d Surface (1997) (1)
- Periodicity in the undulation spectra of GaP: N (1982) (1)
- Cross-Sectional Scanning Tunneling Microscopy of GaAs Doping Superlattices: Pinned vs. Unpinned Surfaces (1993) (1)
- Photo-Emission Electron Microscopy (PEEM) of Cleaned and Etched 6H-SiC(0001) (2000) (1)
- Electronic density of states from pressure-composition isotherms in metal hydrides☆ (1987) (1)
- Quantum-Confined Electronic States arising from Moir\'e Pattern of MoS2-WSe2 Hetero-bilayers (2017) (1)
- Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy (1998) (1)
- Spectroscopy of Metal Adsorbates on the GaAs(110) Surface Studied with the Scanning Tunneling Microscope (1988) (1)
- Acquisition and analysis of scanning tunneling spectroscopy data—WSe2 monolayer (2021) (1)
- Magnitude of the current in 2D interlayer tunneling devices. (2018) (1)
- Application of electron and ion beam analysis techniques to microelectronics (1992) (1)
- Dissociation of (Zn,O) pairs in GaP (1983) (1)
- Hydrogen Absorption and Critical Point Lowering in Thin PdHx Films (1983) (1)
- Band gap of the Ge(111)2 x 1 and Si(111)2 x 1 surfaces by scanning tunneling spectroscopy. (1991) (1)
- Characterization of GaN epitaxial films grown on SiNx and TiNx porous network templates (2006) (1)
- Graphene on Carbon-Face SiС{0001} Surfaces Formed in a Disilane Environment (2012) (1)
- Erratum: “Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy” [J. Appl. Phys. 98, 123502 (2005)] (2006) (1)
- 2.2.1 Ag, Silver (2015) (0)
- Scanning Tunneling Spectroscopy of Oxidized 6 H-SiC Surfaces (2005) (0)
- Scanning tunneling microscopy observation of surface reconstruction of GaN on sapphire and 6 (0)
- 2.2 Metals (2015) (0)
- Structure of Cs on GaAs(110) as Determined by STM | NIST (1989) (0)
- Davisson-Germer Prize in Atomic or Surface Physics Talk: Studies of Two-dimensional Materials using Tunneling Electrons (2019) (0)
- Molecular beam epitaxial growth of MoSe 2 on graphite , CaF 2 and graphene (2016) (0)
- 2.3.3 AlSb, Aluminum Antimonide (2015) (0)
- Inelastic vertical tunneling in graphene-based heterostructures (2015) (0)
- Laser annealing of CdSe thin films (2008) (0)
- Sources of disorder in double-gated graphene-insulator-graphene tunneling devices (2014) (0)
- Surface Interaction Kinetics of GaAs (100) Surfaces Under Electron Cyclotron Resonance Nitrogen Plasma Exposure (1996) (0)
- 2.3 Semiconductor (2015) (0)
- Electronic and Vibrational States of Point Defects in Semiconductors (1982) (0)
- Scanning Tunneling Potentiometry Mapping of Electron Transport in Graphene on SiC (2012) (0)
- Correlating low-energy electron microscopy and micro-Raman imaging of epitaxial graphene on SiC (2013) (0)
- Reconstructions of the AlNÑ0001Ö surface (2003) (0)
- Nucleation and stoichiometry dependence of rutile.Ti02(OO1)/ GaN(0001) thin films grown by plasma-assisted molecular beam epitaxy (2009) (0)
- Furthering the understanding of quantum well intermixing in InP (2000) (0)
- 2.3.5 CdSe, Cadmium Selenide, and CdS, Cadmium Sulfide (2015) (0)
- 2.2.3 Cr, Chromium (2015) (0)
- Step Arrays on Vicinal SiC Formed by Hydrogen-Etching (2007) (0)
- Measurement of electrostatic potential variations between 2D materials using low-energy electron microscopy (2016) (0)
- Surfactant effect and polarity inversion due to Mg on the GaN(0001) surface (1999) (0)
- 2.2.6 Ir, Iridium (2015) (0)
- Supplementary Information Tuning Electronic Transport in Epitaxial Graphene-based van der Waals Heterostructures (2016) (0)
- Theory of low-energy electron reflectivity from graphene (2013) (0)
- Asymmetric Electron Transport at Monolayer-Bilayer Heterojunctions of Epitaxial Graphene (2014) (0)
- Coexistence of quantum spin hall edge state and proximity-induced superconducting gap in monolayer 1T'-WTe$_2$ (2019) (0)
- Single-step synthesis of crystalline h-BN quantum-and nanodots embedded in boron carbon nitride films (2017) (0)
- Quantum-Confined States and Band Shifts Arising from Moiré Patterns in MoS 2 -WSe 2 Heterojunctions (2018) (0)
- Spatially-resolved thermopower of graphene: role of boundary and defects (2014) (0)
- 2.2.9 Pd, Palladium (2015) (0)
- Absolute Amplitude, Dingle Temperature and Frequency of de Haas-van Alphen Oscillations in Pd—H Alloys (1979) (0)
- Solubility-limit activation of Si doping at MBE GaAs pn junctions observed by cross-sectional scanning tunneling microscopy (1993) (0)
- Role of Strain in Quantum-Confined States of Heterobilayers of 2D Materials (2019) (0)
- 2.2.12 V, Vanadium (2015) (0)
- Quantum spin Hall effect in twisted bilayer WTe 2 measured with STM (2020) (0)
- Morphology and surface reconstructions of GaN(1 1 00) surfaces (2003) (0)
- Nucleation and Stochiometry Dependence of Rutile-TiO 2 (001)/GaN(0001) Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy (2008) (0)
- Engineering p-n junctions in grapbene/molybdenum disulfide heterostructures (2019) (0)
- TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE (1999) (0)
- Low-Energy Electron Reflectivity of Two-dimensional Materials (2014) (0)
- 2.3.2 AlN, Aluminum Nitride (2015) (0)
- Nucleation and stochiometry dependence of rutile-TiO$_{2}$ thin films grown by plasma-assisted molecular beam epitaxy (2008) (0)
- Scanning Tunneling Microscopy and Spectroscopy of Semiconductor Surfaces (2005) (0)
- Direct growth of hexagonal boron nitride on epitaxial graphene (2015) (0)
- Reconstructions of the GaNs0001d d Surface (1997) (0)
- Growth and electronic properties of nanolines on TiO2-terminated SrTiO3(001) surfaces (2017) (0)
- Development of Electronic and Topographic Structure of the Vacuum-cleaved SrTiO$_{3}$ (001) Surface as a Function of Annealing (2014) (0)
- Surfactants and Antisurfactants on GaN surfaces (2002) (0)
- Imaging stacking faults in epitaxial graphene/buffer layer structures on SiC(0001) (2013) (0)
- Acquisition and Analysis of Scanning Tunneling Spectroscopy Data $-$ WSe$_2$ Monolayer. (2020) (0)
- Morphology and surface reconstructions of m-plane GaN (2002) (0)
- Silicon on GaN(0001) and surfaces (2001) (0)
- Epitaxial Graphene Formation on SiC(000$\bar {1})$ (2009) (0)
- 2.2.8 Ni, Nickel (2015) (0)
- 2.3.13 InN, Indium Nitride (2015) (0)
- Scanning Tunneling Microscopy of the GaN ( 000 ) Surface (1999) (0)
- Structural studies of epitaxial graphene formed on SiC { 0001 } surfaces (2010) (0)
- First principles calculation of structural and electronic properties of the 5x5- SiC(0001) reconstructed surface (2010) (0)
- Electronic states of two-dimensional materials and heterostructures (2015) (0)
- Co-existence of negatively and positively buckled isomers on n + -doped Si(111)-2x1 (2011) (0)
- Morphology and surface reconstructions of m-plane (2003) (0)
- Novel Contrast Mechanism in Cross-Sectional Scanning Tunneling Microscopy of GaSb/GaAs Type-II Nanostructures (2008) (0)
- Supplemental Information Large Scale 2 D / 3 D Hybrids based on Gallium Nitride and Transition Metal Dichalcogenides (2017) (0)
- InGaAs/InP quantum well intermixing studied by cross-sectional tunneling microscopy (1999) (0)
- TEM study of the morphology of GaN/SiC (0001) grown at various temperatures by MBE[Transmission Electron Microscopy, Molecular Beam Epitaxy] (2000) (0)
- Phase separation kinetics during drying (1996) (0)
- Electron-hole exchange transitions at defects in semiconduc- tors. (1985) (0)
- Current transport properties of thick YBCO film made by ex-situ process : Study over wide range of magnetic field (2003) (0)
- Lithium in nigerite-groupminerals T (2004) (0)
- Scanning Tunneling Microscopy and Spectroscopy of Pentacene films Deposited on SiC (2007) (0)
- Summary of scanning tunneling microscopy (2008) (0)
- Atomic scale structure of interfaces : symposium held November 27-29, 1989, Boston Massachusetts, U.S.A. (1990) (0)
- 2.2.2 Au, Gold (2015) (0)
- 2.2.10 Pt, Platinum (2015) (0)
- 2.2.11 Ta, Tantalum (2015) (0)
- 2.3.10 Ge, Germanium (2015) (0)
- Asymmetric Electron Transport Induced by Friedel Oscillations at Monolayer-Bilayer Heterojunctions of Epitaxial Graphene (2014) (0)
- UvA-DARE ( Digital Academic Repository ) Astrocytes in development , aging and disease : starring GFAP (2010) (0)
- Epitaxial Graphene Formation on SiC(0001) (2009) (0)
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