Ronald D. Schrimpf | Academic Influence

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Ronald D. Schrimpf

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Ronald D. Schrimpf

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Engineering
Computer Science

Ronald D. Schrimpf's Degrees

PhD Electrical Engineering Stanford University
Masters Electrical Engineering Stanford University
Bachelors Electrical Engineering Stanford University

Why Is Ronald D. Schrimpf Influential?

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According to Wikipedia, Ronald D Schrimpf is an American electrical engineer and scientist. He is the Orrin H. Ingram Chair in Engineering, Electrical Engineering & Computer Science at Vanderbilt University. where his research activities focus on microelectronics and semiconductor devices. He is affiliated with the Radiation Effects and Reliability Group at Vanderbilt University where he works on the effects of radiation on semiconductor devices and integrated circuits. He also serves as the Director of the Institute for Space and Defense Electronics at Vanderbilt. He is best known for his work in the field of ionizing radiation response on Bipolar junction transistor and Enhanced Low Dose Rate Sensitivity in BJT.

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Ronald D. Schrimpf's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Charge Collection and Charge Sharing in a 130 nm CMOS Technology (2006) (357)
Response of advanced bipolar processes to ionizing radiation (1991) (285)
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates (1994) (264)
Monte Carlo Simulation of Single Event Effects (2010) (201)
Structure, properties, and dynamics of oxygen vacancies in amorphous SiO2. (2002) (180)
Trends in the total-dose response of modern bipolar transistors (1992) (180)
Physical model for enhanced interface-trap formation at low dose rates (2002) (174)
Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies (2007) (172)
Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions (2009) (171)
Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides (1996) (164)
Defect generation by hydrogen at the Si- SiO(2) interface. (2001) (156)
The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM (2005) (156)
ELDRS in bipolar linear circuits: A review (2008) (148)
Analysis of single-event transients in analog circuits (2000) (142)
On-Chip Characterization of Single-Event Transient Pulsewidths (2006) (141)
Single event transient pulse widths in digital microcircuits (2004) (141)
Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides (2004) (139)
Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices (2002) (139)
Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors (2003) (131)
Space charge limited degradation of bipolar oxides at low electric fields (1998) (127)
Physical mechanisms of negative-bias temperature instability (2005) (126)
Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices (2004) (122)
Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures (1997) (119)
Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs (1995) (116)
The structure, properties, and dynamics of oxygen vacancies in amorphous SiO/sub 2/ (2002) (110)
Physically based comparison of hot-carrier-induced and ionizing-radiation-induced degradation in BJTs (1995) (108)
Multiple-Bit Upset in 130 nm CMOS Technology (2006) (108)
Defects in microelectronic materials and devices (2008) (107)
Reactions of hydrogen with Si-SiO/sub 2/ interfaces (2000) (107)
Impact of Ion Energy and Species on Single Event Effects Analysis (2007) (106)
Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits (2007) (105)
Total-dose radiation response of hafnium-silicate capacitors (2002) (105)
The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors (2004) (105)
Modeling ionizing radiation induced gain degradation of the lateral PNP bipolar junction transistor (1996) (103)
Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors (2011) (103)
Muon-Induced Single Event Upsets in Deep-Submicron Technology (2010) (102)
Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors (2013) (99)
Effects of hydrogen motion on interface trap formation and annealing (2004) (97)
Effect of Well and Substrate Potential Modulation on Single Event Pulse Shape in Deep Submicron CMOS (2007) (95)
Hardness-assurance and testing issues for bipolar/BiCMOS devices (1993) (95)
Scaling Trends in SET Pulse Widths in Sub-100 nm Bulk CMOS Processes (2010) (88)
A conceptual model of a single-event gate-rupture in power MOSFETs (1993) (87)
A review of the techniques used for modeling single-event effects in power MOSFETs (1996) (86)
Simulating single-event burnout of n-channel power MOSFET's (1993) (86)
Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped Al/sub x/Ga/sub 1-x/N and thick GaN cap Layers (2004) (85)
Total ionizing dose effects in shallow trench isolation oxides (2008) (85)
ACCELERATED TESTS FOR SIMULATING LOW DOSE RATE GAIN DEGRADATION OF LATERAL AND SUBSTRATE PNP BIPOLAR JUNCTION TRANSISTORS (1996) (84)
Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection (2008) (84)
Analytical model for proton radiation effects in bipolar devices (2002) (81)
SEGR and SEB in n-channel power MOSFETs (1996) (81)
High-speed light Modulation in avalanche breakdown mode for Si diodes (2004) (80)
Recent advances in understanding total-dose effects in bipolar transistors (1995) (80)
Process Dependence of Proton-Induced Degradation in GaN HEMTs (2010) (80)
Role of heavy-ion nuclear reactions in determining on-orbit single event error rates (2005) (80)
Enhanced TID Susceptibility in Sub-100 nm Bulk CMOS I/O Transistors and Circuits (2007) (79)
Electrical, spectral, and chemical properties of 1.8 MeV proton irradiated AlGaN/GaN HEMT structures as a function of proton fluence (2003) (78)
Proton-induced defect generation at the Si-SiO/sub 2/ interface (2001) (77)
Fin-Width Dependence of Ionizing Radiation-Induced Subthreshold-Swing Degradation in 100-nm-Gate-Length FinFETs (2009) (76)
Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression (1995) (76)
Characterization of enhanced low dose rate sensitivity (ELDRS) effects using Gated Lateral PNP transistor structures (2004) (74)
Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs (2013) (74)
Effects of scaling on muon-induced soft errors (2011) (73)
Hardness-assurance issues for lateral PNP bipolar junction transistors (1995) (72)
Charge separation techniques for irradiated pseudo-MOS SOI transistors (2003) (72)
Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics (2001) (71)
Impact of Technology Scaling on SRAM Soft Error Rates (2014) (70)
Monte-Carlo Based On-Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch (2007) (70)
MOS device degradation due to total dose ionizing radiation in the natural space environment : a review (1990) (70)
Radiation Induced Charge Trapping in Ultrathin ${\rm HfO}_{2}$-Based MOSFETs (2007) (70)
Proton radiation response mechanisms in bipolar analog circuits (2001) (69)
Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs (2011) (69)
Electron-Induced Single-Event Upsets in Static Random Access Memory (2013) (67)
Moderated degradation enhancement of lateral pnp transistors due to measurement bias (1998) (67)
Physical Model for the Low-Dose-Rate Effect in Bipolar Devices (2006) (67)
Effects of Guard Bands and Well Contacts in Mitigating Long SETs in Advanced CMOS Processes (2007) (67)
Common origin for enhanced low-dose-rate sensitivity and bias temperature instability under negative bias (2005) (67)
The determination of Si-SiO/sub 2/ interface trap density in irradiated four-terminal VDMOSFETs using charge pumping (1996) (66)
Application of RADSAFE to Model the Single Event Upset Response of a 0.25 $\mu$m CMOS SRAM (2007) (66)
Evaluation of SEGR threshold in power MOSFETs (1994) (66)
The Impact of Delta-Rays on Single-Event Upsets in Highly Scaled SOI SRAMs (2010) (65)
Implications of Nuclear Reactions for Single Event Effects Test Methods and Analysis (2006) (62)
Radiation-Induced Defect Evolution and Electrical Degradation of AlGaN/GaN High-Electron-Mobility Transistors (2011) (61)
Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs (2008) (60)
Temperature dependence of single-event burnout in n-channel power MOSFETs (for space application) (1992) (60)
Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices. (2016) (60)
Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs (2015) (59)
Band-to-Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices (2007) (59)
Identification of degradation mechanisms in a bipolar linear voltage comparator through correlation of transistor and circuit response (1999) (58)
Reactions of Hydrogen with Si-SiO 2 Interfaces (2001) (58)
Independent Measurement of SET Pulse Widths From N-Hits and P-Hits in 65-nm CMOS (2010) (57)
General Framework for Single Event Effects Rate Prediction in Microelectronics (2009) (57)
Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs (1993) (57)
Low-Energy X-ray and Ozone-Exposure Induced Defect Formation in Graphene Materials and Devices (2011) (57)
SEU Prediction From SET Modeling Using Multi-Node Collection in Bulk Transistors and SRAMs Down to the 65 nm Technology Node (2011) (56)
Modeling low-dose-rate effects in irradiated bipolar-base oxides (1998) (55)
Single Event Mechanisms in 90 nm Triple-Well CMOS Devices (2008) (55)
Heavy Ion Testing and Single Event Upset Rate Prediction Considerations for a DICE Flip-Flop (2009) (54)
Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs (2008) (54)
Electron Capture, Hydrogen Release, and Enhanced Gain Degradation in Linear Bipolar Devices (2008) (54)
Total-dose and single-event effects in switching DC/DC power converters (2002) (54)
Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances (2006) (54)
Critical charge for single-event transients (SETs) in bipolar linear circuits (2001) (54)
Influence of LDD Spacers and H+ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses (2018) (53)
Integrating Circuit Level Simulation and Monte-Carlo Radiation Transport Code for Single Event Upset Analysis in SEU Hardened Circuitry (2008) (52)
Hydrogen in MOSFETs - A primary agent of reliability issues (2007) (52)
Single-Event Burnout Mechanisms in SiC Power MOSFETs (2018) (52)
An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs (2006) (51)
Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation (2002) (51)
Separation of ionization and displacement damage using gate-controlled lateral PNP bipolar transistors (2002) (50)
Impact of proton irradiation on deep level states in n-GaN (2013) (50)
The E′ center and oxygen vacancies in SiO2 (2008) (49)
Geometry Dependence of Total-Dose Effects in Bulk FinFETs (2014) (49)
Dose rate effects in bipolar oxides: Competition between trap filling and recombination (2006) (49)
Radiation-induced charge trapping in thin Al/sub 2/O/sub 3//SiO/sub x/N/sub y//Si(100) gate dielectric stacks (2003) (48)
Effect of amplifier parameters on single-event transients in an inverting operational amplifier (2001) (47)
The effect of metallization Layers on single event susceptibility (2005) (47)
Physical Processes and Applications of the Monte Carlo Radiative Energy Deposition (MRED) Code (2015) (47)
Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs (2012) (47)
Substrate Engineering Concepts to Mitigate Charge Collection in Deep Trench Isolation Technologies (2006) (47)
Total-dose radiation effects on sol-gel derived PZT thin films (1992) (47)
Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices (2008) (47)
Ab initio calculations of H/sup +/ energetics in SiO/sub 2/: Implications for transport (1999) (46)
Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions (2010) (45)
Saturation of the dose-rate response of bipolar transistors below 10 rad(SiO/sub 2/)/s: implications for hardness assurance (1994) (45)
Radiation-induced gain degradation in lateral PNP BJTs with lightly and heavily doped emitters (1997) (45)
Total-dose and single-event effects in DC/DC converter control circuitry (2003) (45)
Radiation-enhanced short channel effects due to multi-dimensional influence from charge at trench isolation oxides (1999) (44)
A Quantitative Model for ELDRS and ${\rm H}_{2}$ Degradation Effects in Irradiated Oxides Based on First Principles Calculations (2011) (44)
Hydrogen-related defects in irradiated SiO/sub 2/ (2000) (44)
Total dose effects in a linear Voltage regulator (2004) (44)
Depletion-All-Around Operation of the SOI Four-Gate Transistor (2007) (44)
Estimation of low-dose-rate degradation on bipolar linear integrated circuits using switching experiments (2005) (44)
Dose-rate effects on the total-dose threshold-voltage shift of power MOSFETs (1988) (43)
Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors (2015) (43)
Ozone-exposure and annealing effects on graphene-on-SiO2 transistors (2012) (43)
Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics (2004) (43)
200 MeV proton damage effects on multi-quantum well laser diodes (1997) (43)
Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors (2010) (43)
Dose‐rate effects on radiation‐induced bipolar junction transistor gain degradation (1994) (43)
Single-event burnout of power bipolar junction transistors (1991) (42)
Single-Event Charge Collection and Upset in 40-nm Dual- and Triple-Well Bulk CMOS SRAMs (2011) (42)
Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs (1996) (42)
Single-Event Transient Measurements in nMOS and pMOS Transistors in a 65-nm Bulk CMOS Technology at Elevated Temperatures (2011) (42)
Evaluating average and atypical response in radiation effects simulations (2003) (42)
Gain degradation of lateral and substrate pnp bipolar junction transistors (1996) (41)
Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy (2002) (41)
Radiation‐induced mobility degradation in p‐channel double‐diffused metal‐oxide‐semiconductor power transistors at 300 and 77 K (1993) (41)
Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies (2009) (41)
Effects of Device Aging on Microelectronics Radiation Response and Reliability (2006) (41)
Total Dose Radiation Response of Nitrided and Non-nitrided SiO$_{2}$/4H-SiC MOS Capacitors (2006) (41)
Effects of Switched-bias Annealing on Charge Trapping in HfO$_{2}$ Gate Dielectrics (2006) (40)
Effectiveness of SEL Hardening Strategies and the Latchup Domino Effect (2012) (40)
Radiation-induced charge trapping in thin Al2O3/SiOxNy/Si(100) gate dielectric stacks. (2003) (40)
Temperature and angular dependence of substrate response in SEGR [power MOSFET] (1994) (40)
Radiation effects in new materials for nano-devices (2011) (39)
Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence (2017) (39)
Effects of Proton-Induced Displacement Damage on Gallium Nitride HEMTs in RF Power Amplifier Applications (2015) (39)
Reactions of water molecules in silica-based network glasses. (2008) (39)
Defects and nanocrystals generated by Si implantation into a-SiO/sub 2/ (2000) (39)
Comparing Single Event Upset sensitivity of bulk vs. SOI based FinFET SRAM cells using TCAD simulations (2010) (39)
Laser-Induced Current Transients in Silicon-Germanium HBTs (2008) (38)
Reliability and radiation effects in IC technologies (2008) (38)
Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs (2014) (38)
Bias Dependence of Total Ionizing Dose Effects in SiGe-MOS FinFETs (2014) (38)
Domain switching and spatial dependence of permittivity in ferroelectric thin films (1997) (37)
Fin Width and Bias Dependence of the Response of Triple-Gate MOSFETs to Total Dose Irradiation (2011) (37)
Prediction of low dose-rate effects in power metal oxide semiconductor field effect transistors based on isochronal annealing measurements (1997) (37)
Modeling of radiation-induced single event transients in SOI FinFETS (2013) (36)
Contribution of low-energy (≪ 10 MeV) neutrons to upset rate in a 65 nm SRAM (2010) (36)
Impact of Total Ionizing Dose on the Analog Single Event Transient Sensitivity of a Linear Bipolar Integrated Circuit (2007) (36)
Effects of multi-node charge collection in flip-flop designs at advanced technology nodes (2010) (36)
Predicting Thermal Neutron-Induced Soft Errors in Static Memories Using TCAD and Physics-Based Monte Carlo Simulation Tools (2007) (36)
Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs (2009) (35)
Radiation hardness of FDSOI and FinFET technologies (2011) (35)
Effect of switching from high to low dose rate on linear bipolar technology radiation response (2003) (35)
The Impact of X-Ray and Proton Irradiation on ${\rm HfO}_2/{\rm Hf}$-Based Bipolar Resistive Memories (2013) (35)
Defect Interactions of ${\hbox{H}}_{2}$ in ${\hbox{SiO}}_{2}$: Implications for ELDRS and Latent Interface Trap Buildup (2010) (35)
Spatial and temporal characteristics of energy deposition by protons and alpha particles in silicon (2004) (35)
Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors (2011) (35)
Annealing Behavior of a Proton Irradiated Al Ga N/GaN High Electron Mobility Transistor Grown by MBE (2000) (35)
Effects of radiation‐induced oxide‐trapped charge on inversion‐layer hole mobility at 300 and 77 K (1992) (35)
A model of radiation effects in nitride–oxide films for power MOSFET applications (2003) (34)
Temperature-Dependence of Off-State Drain Leakage in X-Ray Irradiated 130 nm CMOS Devices (2006) (33)
Hydrogen effects in MOS devices (2007) (33)
Charge Generation by Secondary Particles From Nuclear Reactions in BEOL Materials (2009) (33)
Bias Dependence of Single-Event Upsets in 16 nm FinFET D-Flip-Flops (2015) (33)
Effect of Voltage Fluctuations on the Single Event Transient Response of Deep Submicron Digital Circuits (2007) (33)
Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices (2018) (33)
Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJT's (1995) (32)
Effects of Bias on the Irradiation and Annealing Responses of 4H-SiC MOS Devices (2011) (32)
Origins of total-dose response variability in linear bipolar microcircuits (2000) (32)
Coupled electro-thermal Simulations of single event burnout in power diodes (2005) (32)
Experimental validation of an accelerated method of oxide-trap-level characterization for predicting long term thermal effects in metal oxide semiconductor devices (1997) (32)
Hydrogen-Related Instabilities in MOS Devices Under Bias Temperature Stress (2007) (32)
Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs (2013) (32)
Mechanisms of ionizing-radiation-induced degradation in modern bipolar devices (1991) (32)
Increased Rate of Multiple-Bit Upset From Neutrons at Large Angles of Incidence (2008) (31)
Bias Dependence of Total-Dose Effects in Bulk FinFETs (2013) (31)
Radioactive Nuclei Induced Soft Errors at Ground Level (2009) (31)
A Generalized SiGe HBT Single-Event Effects Model for On-Orbit Event Rate Calculations (2007) (31)
Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs (2018) (31)
Dual behavior of H+ at Si–SiO2 interfaces: Mobility versus trapping (2002) (31)
The Use of a Dose-Rate Switching Technique to Characterize Bipolar Devices (2009) (31)
Atomic-scale origins of bias-temperature instabilities in SiC–SiO2 structures (2011) (30)
Nature of Interface Defect Buildup in Gated Bipolar Devices Under Low Dose Rate Irradiation (2006) (29)
Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices (2014) (29)
Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs (2017) (29)
The effects of aging on MOS irradiation and annealing response (2005) (29)
The Effects of Proton-Defect Interactions on Radiation-Induced Interface-Trap Formation and Annealing (2012) (29)
Hydrogen-Related Defects in Irradiated SiO (2000) (28)
Physical mechanisms of single-event effects in advanced microelectronics (2007) (28)
Impact of Proton Irradiation-Induced Bulk Defects on Gate-Lag in GaN HEMTs (2009) (28)
The sensitivity of radiation-induced leakage to STI topology and sidewall doping (2011) (28)
Effects of Water on the Aging and Radiation Response of MOS Devices (2006) (28)
Mechanisms Separating Time-Dependent and True Dose-Rate Effects in Irradiated Bipolar Oxides (2012) (28)
Annealing effects on multi-quantum well laser diodes after proton irradiation (1998) (28)
Increased Single-Event Transient Pulsewidths in a 90-nm Bulk CMOS Technology Operating at Elevated Temperatures (2010) (28)
Reliability of III-V devices - The defects that cause the trouble (2012) (28)
The study of radiation effects in emerging micro and nano electro mechanical systems (M and NEMs) (2016) (28)
Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOSFETs (2009) (28)
Test Circuit for Measuring Pulse Widths of Single-Event Transients Causing Soft Errors (2008) (27)
Single- and Multiple-Event Induced Upsets in ${\rm HfO}_2/{\rm Hf}$ 1T1R RRAM (2014) (27)
Single Event Upset Mechanisms for Low-Energy-Deposition Events in SiGe HBTs (2008) (27)
Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy (2015) (27)
Radiation Effects in Microelectronics (2007) (27)
Hydrogen shuttling near Hf-defect complexes in Si∕SiO2∕HfO2 structures (2007) (27)
Selection of Well Contact Densities for Latchup-Immune Minimal-Area ICs (2010) (27)
TCAD-assisted analysis of back-channel leakage in irradiated mesa SOI nMOSFETs (1998) (26)
Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures (2016) (26)
Characterization of multiple Si∕SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation (2004) (26)
Measurement of a cross-section for single-event gate rupture in power MOSFETs (1996) (26)
Bias-Temperature Instabilities in 4H-SiC Metal–Oxide–Semiconductor Capacitors (2012) (26)
Total Ionizing Dose Effects on FinFET-Based Capacitor-Less 1T-DRAMs (2010) (25)
Single event burnout in power diodes: Mechanisms and models (2006) (25)
Proton-induced damage in gallium nitride-based Schottky diodes (2005) (25)
Layout-Related Stress Effects on Radiation-Induced Leakage Current (2010) (25)
Temperature dependence of soft-error rates for FF designs in 20-nm bulk planar and 16-nm bulk FinFET technologies (2016) (25)
The Application of RHBD to n-MOSFETs Intended for Use in Cryogenic-Temperature Radiation Environments (2007) (25)
From Displacement Damage to ELDRS: Fifty Years of Bipolar Transistor Radiation Effects at the NSREC (2013) (25)
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes (2020) (25)
A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs (1996) (25)
The effects of ionizing radiation on power-MOSFET termination structures (1989) (25)
Extended SET Pulses in Sequential Circuits Leading to Increased SE Vulnerability (2008) (25)
Atomic Displacement Effects in Single-Event Gate Rupture (2008) (25)
SEL-Sensitive Area Mapping and the Effects of Reflection and Diffraction From Metal Lines on Laser SEE Testing (2013) (24)
Simulated space radiation effects on power MOSFETs in switching power supplies (1989) (24)
Differences Between Charge Trapping States in Irradiated Nano-Crystalline HfO$_{2}$ and Non-Crystalline Hf Silicates (2006) (24)
Analysis of the influence of MOS device geometry on predicted SEU cross sections (1999) (24)
Experimental determination of the frequency factor of thermal annealing processes in metal–oxide–semiconductor gate-oxide structures (1997) (24)
The Effects of Scaling and Well and Substrate Contact Placement on Single Event Latchup in Bulk CMOS Technology (2005) (24)
Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors (2013) (24)
Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses (2018) (24)
Interface and oxide charge effects on DMOS channel mobility (1989) (23)
Estimation and verification of radiation induced N/sub ot/ and N/sub it/ energy distribution using combined bipolar and MOS characterization methods in gated bipolar devices (2005) (23)
Total dose effects on gate controlled lateral PNP bipolar junction transistors (1998) (23)
Performance, reliability, radiation effects, and aging issues in microelectronics — from atomic-scale physics to engineering-level modeling (2009) (23)
SINGLE EVENT EFFECTS (2002) (23)
SINGLE EVENT EFFECTS (2002) (23)
Hot-Carrier Degradation in GaN HEMTs Due to Substitutional Iron and Its Complexes (2016) (23)
The Effects of Angle of Incidence and Temperature on Latchup in 65 nm Technology (2007) (23)
Comparison of lifetime and threshold current damage factors for multi-quantum-well (MQW) GaAs/GaAlAs laser diodes irradiated at different proton energies (1999) (23)
Single Event-Induced Error Propagation Through Nominally-off Transmission Gates (2006) (23)
Minimizing gain degradation in lateral PNP bipolar junction transistors using gate control (1999) (23)
Time-Domain Reflectometry Measurements of Total-Ionizing-Dose Degradation of $n$ MOSFETs (2013) (23)
Assessing Alpha Particle-Induced Single Event Transient Vulnerability in a 90-nm CMOS Technology (2008) (23)
Temperature effect on geminate recombination (2006) (23)
Temperature Dependence and Postirradiation Annealing Response of the $1/f$ Noise of 4H-SiC MOSFETs (2013) (22)
Effects of oxide charge and surface recombination velocity on the excess base current of BJTs (1993) (22)
Four-Gate Transistor Voltage-Controlled Negative Differential Resistance Device and Related Circuit Applications (2006) (22)
Charge Trapping Properties of 3C- and 4H-SiC MOS Capacitors With Nitrided Gate Oxides (2009) (22)
Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs (2019) (22)
Neutron and alpha particle-induced transients in 90 nm technology (2008) (22)
Electron-Induced Single Event Upsets in 28 nm and 45 nm Bulk SRAMs (2015) (22)
Heavy-Ion-Induced Digital Single Event Transients in a 180 nm Fully Depleted SOI Process (2009) (22)
RF Performance of Proton-Irradiated AlGaN/GaN HEMTs (2014) (22)
Room-temperature diffusive phenomena in semiconductors: The case of AlGaN (2011) (22)
Heavy-Ion-Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence (2017) (21)
Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics (2018) (21)
SEB Hardened Power MOSFETs With High-K Dielectrics (2015) (21)
1/ $f$ Noise in As-Processed and Proton-Irradiated AlGaN/GaN HEMTs Due to Carrier Number Fluctuations (2017) (21)
Monte Carlo Simulations to Evaluate the Contribution of Si Bulk, Interconnects, and Packaging to Alpha-Soft Error Rates in Advanced Technologies (2010) (21)
The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI (2009) (21)
Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si (2017) (21)
The Impact of Depletion Region Potential Modulation on Ion-Induced Current Transient Response (2013) (21)
Charge trapping in irradiated SOI wafers measured by second harmonic generation (2004) (21)
Single event transient pulse width measurements in a 65-nm bulk CMOS technology at elevated temperatures (2010) (21)
Predicting neutron induced soft error rates: Evaluation of accelerated ground based test methods (2008) (21)
Dual role of fluorine at the Si–SiO2 interface (2004) (21)
Total Dose Response of Ge MOS Capacitors With HfO $_{2}$ /Dy $_{2}$ O $_{3}$ Gate Stacks (2007) (20)
Aging and baking effects on the radiation hardness of MOS capacitors (2001) (20)
Evidence for Lateral Angle Effect on Single-Event Latchup in 65 nm SRAMs (2009) (20)
Hardness assurance implications of bimodal total dose response in a bipolar linear voltage comparator (1999) (20)
Total Ionizing Dose Effects on HfO2-Passivated Black Phosphorus Transistors (2016) (20)
Total-Ionizing-Dose Response of Narrow, Long Channel 45 nm PDSOI Transistors (2014) (20)
Quantifying the Reduction in Collected Charge and Soft Errors in the Presence of Guard Rings (2008) (20)
Exploration of heavy ion irradiation effects on gate oxide reliability in power MOSFETs (1995) (20)
Bias Effects on Total Dose-Induced Degradation of Bipolar Linear Microcircuits for Switched Dose-Rate Irradiation (2009) (20)
Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN (2015) (20)
Modeling of Ionizing Radiation-Induced Degradation in Multiple Gate Field Effect Transistors (2009) (20)
Range-Finding Sensor Degradation in Gamma Radiation Environments (2015) (20)
Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems (2014) (20)
Modeling Total-Dose Effects for a Low-Dropout Voltage Regulator (2006) (20)
Effects of Negative-Bias-Temperature-Instability on Low-Frequency Noise in SiGe ${p}$ MOSFETs (2016) (19)
Effects of Hydrogen on the Radiation Response of Bipolar Transistors: Experiment and Modeling (2008) (19)
The Effects of X-Ray and Proton Irradiation on a 200 GHz/90 GHz Complementary $(npn + pnp)$ SiGe:C HBT Technology (2007) (19)
Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes (2016) (19)
Quantum Mechanical Modeling of Radiation-Induced Defect Dynamics in Electronic Devices (2015) (19)
Including the Effects of Process-Related Variability on Radiation Response in Advanced Foundry Process Design Kits (2010) (19)
The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies (2012) (19)
The Effects of Proton and X-Ray Irradiation on the DC and AC Performance of Complementary (npn + pnp) SiGe HBTs on Thick-Film SOI (2007) (19)
Single Particle Displacement Damage in Silicon (2012) (19)
Effects of ionizing radiation on the noise properties of DMOS power transistors (1991) (19)
Total dose effects on double gate fully depleted SOI MOSFETs (2004) (19)
Electrical Stress and Total Ionizing Dose Effects on ${\hbox {MoS}}_{2}$ Transistors (2014) (19)
Experimental evidence of the temperature and angular dependence in SEGR [power MOSFET] (1996) (19)
SET Characterization in Logic Circuits Fabricated in a 3DIC Technology (2011) (18)
Alpha-Particle and Focused-Ion-Beam-Induced Single-Event Transient Measurements in a Bulk 65-nm CMOS Technology (2011) (18)
Displacement Damage in Bipolar Junction Transistors: Beyond Messenger-Spratt (2017) (18)
Single-Event Transient Response of InGaAs MOSFETs (2014) (18)
Vanderbilt Pelletron - Low Energy Protons and Other Ions for Radiation Effects on Electronics (2015) (18)
The Role of Atomic Displacements in Ion-Induced Dielectric Breakdown (2009) (18)
High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs (2016) (18)
Total dose effects on bipolar integrated circuits: characterization of the saturation region (2004) (18)
Trade-Offs Between RF Performance and Total-Dose Tolerance in 45-nm RF-CMOS (2011) (18)
Radiation Effects on LiNbO $_2$ Memristors for Neuromorphic Computing Applications (2013) (18)
Application of test method 1019.4 to nonhardened power MOSFETs (1994) (18)
Radiation-Induced Charge Trapping in Thin (2003) (17)
Profiling of electrical doping concentration in ferroelectrics (1997) (17)
Experimental Characterization of Radiation-Induced Charge Sharing (2013) (17)
Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs (2012) (17)
Gain degradation and enhanced low-dose-rate sensitivity in bipolar junction transistors (2004) (17)
Modeling BJT radiation response with non-uniform energy distributions of interface traps (1999) (17)
Quantifying the impact of homogeneous metal contamination using test structure metrology and device modeling (1994) (17)
1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions (2011) (17)
Single Event-Induced Instability in Linear Voltage Regulators (2006) (17)
Digital Control for Radiation-Hardened Switching Converters in Space (2010) (17)
Post-Irradiation Annealing Mechanisms of Defects Generated in Hydrogenated Bipolar Oxides (2008) (17)
Impact of Spacecraft-Shell Composition on 1 GeV/Nucleon ${}^{56}$ Fe Ion-Fragmentation and Dose Reduction (2011) (17)
Limitations of the uniform effective field approximation due to doping of ferroelectric thin‐film capacitors (1995) (17)
Doping-Type Dependence of Damage in Silicon Diodes Exposed to X-Ray, Proton, and He $^{+}$ Irradiations (2007) (17)
Total dose effects on power-MOSFET switching converters (1998) (17)
Heavy-Ion and Laser Induced Charge Collection in SiGe Channel $p{\rm MOSFETs}$ (2014) (17)
System-level design hardening based on worst-case ASET simulations (2004) (17)
Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model (2018) (17)
Quantum Mechanical Description of Displacement Damage Formation (2007) (17)
Analysis of Bias Effects on the Total-Dose Response of a Bipolar Voltage Comparator (2006) (17)
Novel Energy-Dependent Effects Revealed in GeV Heavy-Ion-Induced Transient Measurements of Antimony-Based III-V HEMTs (2010) (17)
Evidence for reduction of noise and radiation effects in G/sup 4/-FET depletion-all-around operation (2005) (17)
Failure Estimates for SiC Power MOSFETs in Space Electronics (2018) (17)
Radiation Effects on the $1/f$ Noise of Field-Oxide Field Effect Transistors (2008) (16)
Characterization of X-ray radiation damage in Si/SiO/sub 2/ structures using second-harmonic generation (2000) (16)
Geometry-Aware Single-Event Enabled Compact Models for Sub-50 nm Partially Depleted Silicon-on-Insulator Technologies (2015) (16)
Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices (2012) (16)
A hydrogen-transport-based interface-trap-generation model for hot-carrier reliability prediction (2001) (16)
Total dose effects in composite nitride-oxide films (2000) (16)
Interface trapping properties of nMOSFETs with Al 2 O 3 /SiO x N y /Si(100) gate dielectric stacks after exposure to ionizing radiation (2004) (16)
Second Harmonic Generation for Noninvasive Metrology of Silicon-on-Insulator Wafers (2007) (16)
Effects of Halo Doping and Si Capping Layer Thickness on Total-Dose Effects in Ge p-MOSFETs (2009) (16)
Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors (2009) (16)
Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs (2004) (16)
Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors (2007) (16)
Pulsed laser-induced transient currents in bulk and silicon-on-insulator FinFETs (2011) (16)
Radiation-induced base current broadening mechanisms in gated bipolar devices (2004) (16)
System-level design hardening based on worst-case ASET Simulations (2004) (15)
Test structures for analyzing proton radiation effects in bipolar technologies (2002) (15)
Total-ionizing-dose radiation response of 32 nm partially and 45 nm fully-depleted SOI devices (2012) (15)
Synergetic effects of radiation stress and hot-carrier stress on the current gain of npn bipolar junction transistors (1994) (15)
Radiation Effects in 3D Integrated SOI SRAM Circuits (2011) (15)
Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation (2013) (15)
Application determination of single-event transient characteristics in the LM 111 comparator (2001) (15)
Understanding Radiation- and Hot Carrier-Induced Damage Processes in SiGe HBTs Using Mixed-Mode Electrical Stress (2007) (15)
Total Dose and Single Event Transients in Linear Voltage Regulators (2005) (15)
Elevated temperature irradiation at high dose rate of commercial linear bipolar ICs (2003) (15)
Transient radiation effects in ultra-low noise HgCdTe IR detector arrays for space-based astronomy (2005) (15)
The effects of ionizing radiation on the breakdown voltage of p-channel power MOSFETs (1990) (15)
Characterization of Neutron- and Alpha-Particle-Induced Transients Leading to Soft Errors in 90-nm CMOS Technology (2009) (15)
The surface generation hump in irradiated power MOSFETs (1994) (15)
Disorder-recrystallization effects in low-energy beam-solid interactions. (2008) (15)
Comparison of 1/f noise in irradiated power MOSFETs measured in the linear and saturation regions (1992) (15)
Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors (2016) (15)
TID and Displacement Damage Resilience of 1T1R ${\rm HfO}_2/{\rm Hf}$ Resistive Memories (2014) (15)
Scaling Effects on Single-Event Transients in InGaAs FinFETs (2018) (15)
Scaling and soft errors: Moore of the same for SOI ? (2008) (14)
Estimating low-dose rate irradiation response of MOSFETs (1994) (14)
Design considerations for CdTe Nanotetrapods as electronic devices. krogstrup@fys.ku.dk. (2009) (14)
The Effect of Negative Feedback on Single Event Transient Propagation in Digital Circuits (2006) (14)
LASERS, OPTICS, AND OPTOELECTRONICS ÑPACS 42Ö 1859 Simulation of optical pulse propagation in a two-dimensional photonic crystal waveguide using a high accuracy finite-difference time-domain algorithm (2003) (14)
Temperature dependence of single-event burnout in n-channel power MOSFET's (1994) (14)
Mechanisms of Interface Trap Buildup and Annealing During Elevated Temperature Irradiation (2011) (14)
Neutron-induced single-event-transient effects in ultrathin-body fully-depleted silicon-on-insulator MOSFETs (2013) (14)
The Effects of Nuclear Fragmentation Models on Single Event Effect Prediction (2009) (14)
Understanding Charge Collection Mechanisms in InGaAs FinFETs Using High-Speed Pulsed-Laser Transient Testing With Tunable Wavelength (2017) (14)
Total-ionizing-dose radiation response of partially-depleted SOI devices (2010) (14)
The effect of elevated temperature on digital single event transient pulse widths in a bulk CMOS technology (2009) (14)
First-principles modeling of double-gate UTSOI MOSFETs (2005) (14)
Total Dose and Single Event Transients in Linear Voltage Regulators (2005) (14)
Implementation of total dose effects in the bipolar junction transistor Gummel-Poon model (1997) (14)
Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics (2020) (14)
Applications of heavy ion microprobe for single event effects analysis (2007) (14)
Impact of Technology Scaling in sub-100 nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability (2014) (14)
Influence of supply voltage on the multi-cell upset soft error sensitivity of dual- and triple-well 28 nm CMOS SRAMs (2015) (14)
A Performance Comparison between Hardened-byDesign and Conventional-Design Standard Cells (14)
Multi-Scale Simulation of Radiation Effects in Electronic Devices (2008) (14)
Soft Error Considerations for Multicore Microprocessor Design (2007) (13)
Statistical modeling of radiation-induced proton transport in silicon: deactivation of dopant acceptors in bipolar devices (2003) (13)
Dynamic Modeling of Radiation-Induced State Changes in ${\hbox {HfO}_2}/\hbox {Hf}$ 1T1R RRAM (2014) (13)
Strong Correlation Between Experiment and Simulation for Two-Photon Absorption Induced Carrier Generation (2017) (13)
Prediction of the one-year thermal annealing of irradiated commercial devices based on experimental isochronal curves (2000) (13)
TID and Displacement Damage Resilience of 1T1R (2014) (13)
Effect of Ionizing Radiation on Defects and $1/f$ Noise in Ge pMOSFETs (2011) (13)
Dose and dose-rate effects on NPN bipolar junction transistors irradiated at high temperature (2002) (13)
Investigation of possible sources of 1/f noise in irradiated n-channel power MOSFETs (1994) (13)
eview of the Techni ues Used ing vent Effects in Power ss (1996) (13)
Gate Bias Dependence of Single Event Charge Collection in AlSb/InAs HEMTs (2009) (13)
Total Ionizing Dose Effects on Ge pMOSFETs With High-$k$ Gate Stack: On/Off Current Ratio (2009) (13)
Single event transient effects in a voltage reference (2005) (13)
SEGR: a unique failure mode for power mosfets in spacecraft (1996) (13)
X-Ray Irradiation and Bias Effects in Fully-Depleted and Partially-Depleted SiGe HBTs Fabricated on CMOS-Compatible SOI (2006) (13)
Excess collector current due to an oxide-trapped-charge-induced emitter in irradiated NPN BJTs (1994) (13)
Single-Event Transient Sensitivity of InAlSb/InAs/AlGaSb High Electron Mobility Transistors (2012) (12)
Statistical Analysis of Soft Error Rate in Digital Logic Design Including Process Variations (2012) (12)
Memristive devices from ZnO nanowire bundles and meshes (2017) (12)
Low-frequency noise and defects in copper and ruthenium resistors (2019) (12)
Evaluation of ELDRS Mechanisms Using Dose Rate Switching Experiments on Gated Lateral PNP Transistors (2011) (12)
Quantifying the Effectiveness of Guard Bands in Reducing the Collected Charge Leading to Soft Errors (2007) (12)
Two-Photon Absorption Induced Single-Event Effects: Correlation Between Experiment and Simulation (2015) (12)
Total-Ionizing-Dose Effects in Piezoresistive Micromachined Cantilevers (2017) (12)
Total Dose Response of Ge MOS Capacitors With HfO /Dy O Gate Stacks (2007) (12)
Surface Reactions and Defect Formation in Irradiated Graphene Devices (2012) (12)
Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K (2019) (12)
Charge Collection Mechanisms in GaAs MOSFETs (2015) (12)
Gate Bias and Geometry Dependence of Total-Ionizing-Dose Effects in InGaAs Quantum-Well MOSFETs (2017) (12)
The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays (2009) (12)
Analysis of Total-Dose Response of A Bipolar Voltage Comparator Combining Radiation Experiments And Design Data (2005) (12)
Uranium and Thorium Contribution to Soft Error Rate in Advanced Technologies (2011) (12)
Experimental procedure to predict the competition between the degradation induced by irradiation and thermal annealing of oxide trapped charge in MOSFETs (2000) (12)
Including Radiation Effects and Dependencies on Process-Related Variability in Advanced Foundry SPICE Models Using a New Physical Model and Parameter Extraction Approach (2011) (11)
Efficient Method for Estimating the Characteristics of Radiation-Induced Current Transients (2012) (11)
Design considerations for optical systems in ionizing and nonionizing radiation environments (2004) (11)
Application of RADSAFE to Model Single Event Upset Response of a 0.25 micron CMOS SRAM (2006) (11)
Effects of Processing and Radiation Bias on Leakage Currents in Ge pMOSFETs (2010) (11)
Charge Pumping Measurements of Radiation-Induced Interface-Trap Density in Floating-Body SOI FinFETs (2012) (11)
Laser-Induced Current Transients in Strained-Si Diodes (2009) (11)
Heavy Ion Testing With Iron at 1 GeV/amu (2010) (11)
Total Ionizing Dose Effects on Strained ${\rm HfO}_{2}$-Based nMOSFETs (2008) (11)
Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics (2020) (11)
Dose-rate and irradiation temperature dependence of BJT SPICE model rad-parameters (1997) (11)
Contribution of Control Logic Upsets and Multi-Node Charge Collection to Flip-Flop SEU Cross-Section in 40-nm CMOS (2010) (11)
Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTs (2014) (11)
Thermal characterization of single event burnout failure in semiconductor power devices (2000) (11)
The Significance of High-Level Carrier Generation Conditions for Charge Collection in Irradiated Devices (2012) (11)
Modeling and verification of single event transients in deep submicron technologies (2004) (11)
Atomic-Scale Mechanisms for Low-NIEL Dopant-Type Dependent Damage in Si (2006) (11)
Electron Transport Properties of AlxGa1−xN/GaN Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations (2019) (11)
Capacitance–Frequency Estimates of Border-Trap Densities in Multifin MOS Capacitors (2018) (11)
Charge trapping and low frequency noise in SOI buried oxides (2004) (11)
Charge pumping and DCIV currents in SOI FinFETs (2011) (10)
The effects of emitter-tied field plates on lateral PNP ionizing radiation response (1998) (10)
Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process (2014) (10)
Radiation-Induced Charge Trapping and Low-Frequency Noise of Graphene Transistors (2018) (10)
The effects of ionizing radiation on commercial power MOSFETs operated at cryogenic temperatures (1994) (10)
High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors (2011) (10)
Oxide Traps, Border Traps, and Interface Traps in SiO2 (2008) (10)
THE EFFECTS OF SPACE RADIATION EXPOSURE ON POWER MOSFETS: A REVIEW (2004) (10)
Reliability degradation of ultra-thin oxynitride and Al/sub 2/O/sub 3/ gate dielectric films owing to heavy-ion irradiation (2002) (10)
Effects of 2 MeV proton irradiation on operating wavelength and leakage current of vertical cavity surface emitting lasers (2003) (10)
Radiation-induced oxide charge in low- and high-H2 environments (2011) (10)
Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration (2017) (10)
Defects and Nanocrystals Generated by Si Implantation into aSiO 2 (2001) (9)
Thermal modeling of single event burnout failure in semiconductor power devices (2001) (9)
Dose-Rate Dependence of the Total-Ionizing-Dose Response of GaN-Based HEMTs (2019) (9)
Role of bias conditions in the hot carrier degradation of AlGaN/GaN high electron mobility transistors (2013) (9)
Response of a 0.25 μm thin-film silicon-on-sapphire CMOS technology to total ionizing dose (2010) (9)
Heavy ion testing at the galactic cosmic ray energy peak (2009) (9)
Hydrogen Model for Negative Bias Temperature Instabilities in MOS Gate Insulators (2006) (9)
Studies of charge carrier trapping and recombination processes in Si/SiO2/MgO structures using second-harmonic generation (2006) (9)
A generalized model for the lifetime of microelectronic components, applied to storage conditions (2001) (9)
An efficient technique to select logic nodes for single event transient pulse-width reduction (2013) (9)
Effects of High Electric Fields on the Magnitudes of Current Steps Produced by Single Particle Displacement Damage (2013) (9)
Charge Transport in Vertical GaN Schottky Barrier Diodes: A Refined Physical Model for Conductive Dislocations (2020) (9)
Comparison of hot-carrier and radiation induced increases in base current in bipolar transistors (1994) (9)
Effects of Moisture and Hydrogen Exposure on Radiation-Induced MOS Device Degradation and Its Implications for Long-Term Aging (2008) (9)
Activation Energies for Oxide- and Interface-Trap Charge Generation Due to Negative-Bias Temperature Stress of Si-Capped SiGe-pMOSFETs (2015) (9)
Detection of trap activation by ionizing radiation in SiO2 by spatially localized cathodoluminescence spectroscopy (2002) (9)
Analytical Method to Evaluate Soft Error Rate Due to Alpha Contamination (2013) (9)
Simulation of Single-Event Failure in Power Diodes (2002) (9)
Radiation Effects on the Photoluminescence of Rare-Earth Doped Pyrochlore Powders (2013) (9)
Design and evaluation of SOI devices for radiation environments (2010) (9)
Understanding the Average Electron–Hole Pair-Creation Energy in Silicon and Germanium Based on Full-Band Monte Carlo Simulations (2019) (9)
Effect of neutron irradiation on the breakdown voltage of power MOSFET's (1994) (8)
Dynamic modeling of radiation induced state change in HfO2/Hf 1T1R RRAM (2014) (8)
Relaxation of Si-SiO/sub 2/ interfacial stress in bipolar screen oxides due to ionizing radiation (1995) (8)
Evaluation of MOS devices' total dose response using the isochronal annealing method (2001) (8)
Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments (2019) (8)
Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si (2019) (8)
Effect of thermal annealing on radiation-induced degradation of bipolar technologies when the dose rate is switched from high to low (2004) (8)
Charge Collection Mechanisms of Ge-Channel Bulk $p$ MOSFETs (2015) (8)
Mechanisms leading to erratic snapback behavior in bipolar junction transistors with base emitter shorted (2005) (8)
Proton Irradiation as a Screen for Displacement-Damage Sensitivity in Bipolar Junction Transistors (2015) (8)
Oxide interface studies using second harmonic generation (2007) (8)
Determining the drain doping in DMOS transistors using the hump in the leakage current (1994) (8)
Persistent Laser-Induced Leakage in a 20 nm Charge-Pump Phase-Locked Loop (PLL) (2017) (8)
Two-color optical technique for characterization of x-ray radiation-enhanced electron transport in SiO2 (2003) (8)
Proton-Induced Transient Charge Collection in GaAs and InAlSb/InAs-Based FETs (2013) (8)
Total-dose radiation hardness of the SOI 4-gate transistor (G4-FET) (2005) (8)
Radial characteristics of heavy-ion track structure and implications of delta-ray events for microelectronics (2012) (8)
Bias-Temperature Instabilities and Radiation Effects on SiC MOSFETs (2011) (8)
Field-induced reactions of water molecules at Si-dielectric interfaces (2003) (8)
The Effects of Aging and Hydrogen on the Radiation Response of Gated Lateral PNP Bipolar Transistors (2009) (7)
Total Dose Effects on the Performance of Irradiated Capacitorless MSDRAM Cells (2010) (7)
Radiation-Induced Oxide Charge in Low- and High-H$_{2}$ Environments (2011) (7)
Simulating Nuclear Events in a TCAD Model of a High-Density SEU Hardened SRAM Technology (2006) (7)
Impact of body tie and Source/Drain contact spacing on the hot carrier reliability of 45-nm RF-CMOS (2010) (7)
CubeSat: Real-time soft error measurements at low earth orbits (2017) (7)
Total-Ionizing-Dose Effects on 3D Sequentially Integrated, Fully Depleted Silicon-on-Insulator MOSFETs (2020) (7)
Defects in GaN based transistors (2014) (7)
Evidence for border traps in metal‐oxide‐semiconductor transistors through 1/f noise (1995) (7)
Experimental Estimation of the Window of Vulnerability for Logic Circuits (2013) (7)
Moisture Effects on the 1/F Noise Of Mos Devices (2009) (7)
Proton-Induced Displacement Damage and Total-Ionizing-Dose Effects on Silicon-Based MEMS Resonators (2018) (7)
Evaluation of a design methodology dedicated to dose-rate-hardened linear integrated circuits (2002) (7)
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes (2020) (7)
CubeSats and Crowd-Sourced Monitoring for Single Event Effects Hardness Assurance (2017) (7)
Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs (2021) (7)
Simulating Nuclear Events in a TCAD Model of a High-Density SEU Hardened SRAM Technology (2005) (7)
Effects of charge confinement and angular strikes in 40 nm dual- and triple-well bulk CMOS SRAMs (2012) (7)
Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs (2015) (7)
BJT—MOSFET transconductance comparisons (1987) (6)
Predicting worst-case charge buildup in power-device field oxides (1991) (6)
Two-Dimensional Markov Chain Analysis of Radiation-Induced Soft Errors in Subthreshold Nanoscale CMOS Devices (2010) (6)
Analysis of the time-dependent turn-on mechanism for single-event burnout of n-channel power MOSFETs (1993) (6)
Investigation of surface roughness and hillock formation on platinized substrates used for Pt/PZT/Pt capacitor fabrication (1995) (6)
Mobility Modeling Considerations for Radiation Effects Simulations in Silicon (2010) (6)
Circuit-level model for single-event burnout in N-channel power MOSFET's (1999) (6)
Gate-charge measurements for irradiated n-channel DMOS power transistors (1991) (6)
Recoverable degradation in InAs/AlSb high-electron mobility transistors: The role of hot carriers and metastable defects in AlSb (2010) (6)
Experimental Evaluation of Second Harmonic Generation for Non-Invasive Contamination Detection in SOI Wafers (2006) (6)
Bias-Temperature Instabilities in Silicon Carbide MOS Devices (2014) (6)
Total-ionizing-dose effects and reliability of carbon nanotube FET devices (2014) (6)
Comparison of charge pumping and 1/ƒ noise in irradiated Ge pMOSFETs (2011) (6)
Effects of fin width on memory windows in FinFET ZRAMs (2009) (6)
Electrical Effects of a Single Extended Defect in MOSFETs (2016) (6)
Analysis of Total-Dose Response of a Bipolar Voltage Comparator Combining Radiation Experiments and Design Data (2006) (6)
Charge-Steering Latch Design in 16 nm FinFET Technology for Improved Soft Error Hardness (2017) (6)
Radiation Response and Adaptive Control-Based Degradation Mitigation of MEMS Accelerometers in Ionizing Dose Environments (2017) (6)
The Role of Water in the Radiation Response of Wet and Dry Oxides (2007) (6)
1/f noise and interface trap density in high field stressed pMOS transistors (1993) (6)
High Energy Neutron Multiple-Bit Upset (2007) (6)
Bayesian Inference Modeling of Total Ionizing Dose Effects on System Performance (2015) (6)
An I-V measurement method and its application for characterizing ferroelectric PZT thin films (1994) (6)
Impact of process variability on the radiation-induced soft error of nanometer-scale srams in hold and read conditions (2011) (6)
Effect of the Uranium Decay Chain Disequilibrium on Alpha Disintegration Rate (2011) (6)
Dose-Rate Effects on the Total-Ionizing-Dose Response of Piezoresistive Micromachined Cantilevers (2018) (6)
Interpretation of experimentally observed C-t responses for copper contaminated devices (1996) (6)
Evidence of Radiation-Induced Dopant Neutralization in Partially-Depleted SOI NMOSFETs (2007) (6)
Light emission studies of total dose and hot carrier effects on silicon junctions (1999) (6)
Inclusion of Radiation Environment Variability for Reliability Estimates for SiC Power MOSFETs (2020) (6)
Observation of Low-Energy Proton Direct Ionization in a 72-Layer 3-D NAND Flash Memory (2021) (5)
Total-Ionizing-Dose Response of Nb2O5-Based MIM Diodes for Neuromorphic Computing Applications (2018) (5)
Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs (2021) (5)
Effects of Energy-Deposition Variability on Soft Error Rate Prediction (2015) (5)
Considerations for single event effects in non-planar multi-gate SOI FETs (2005) (5)
Effect of Carrier Transport in Oxides Surrounding Active Devices on SEU in 45 nm SOI SRAM (2011) (5)
Radiation-induced acceptor deactivation in bipolar devices: Effects of electric field (2003) (5)
Hydrogen–dopant interactions in SiGe and strained Si (2010) (5)
Explaining the saturation of potential drop on the high side of a grossly asymmetric junction (1985) (5)
Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation (1995) (5)
Total-dose radiation hardness of double-gate ultra-thin SOI MOSFETs (2003) (5)
Degradation in InAs–AlSb HEMTs Under Hot-Carrier Stress (2010) (5)
Estimation of Single-Event-Induced Collected Charge for Multiple Transistors Using Analytical Expressions (2015) (5)
Modeling Erratic Behavior Due to High Current Filamentation in Bipolar Structures Under Dynamic Avalanche Conditions (2016) (5)
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Laser detection of radiation enhanced electron transport in ultra-thin oxides (2003) (4)
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System Health Awareness in Total-Ionizing Dose Environments (2015) (3)
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Combination field plate/field ring termination structures for integrated power devices (1993) (3)
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Model-Based Assurance for Satellites with Commercial Parts in Radiation Environments (2018) (2)
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Monte Carlo simulation of radiation effects in microelectronics (2010) (2)
Hardness-Assurance and Testing Issues for BipoladBiCMOS (2)
Characterizing SRAM Single Event Upset in Terms of Single and Double Node Charge Collection (2008) (2)
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Spatial and Temporal Considerations for Analysis of Single-Event Mechanisms in FinFET Technologies (2017) (0)
DFF Architecture Impact on SEU Response in Different Semiconductor Technologies. (2020) (0)
Influence of Radiation Environment Variability on Cumulative Heavy-Ion-Induced Leakage Current in SiC Power Devices (2023) (0)
Interaction of hydrogen with defects in GaN (2009) (0)
Radiation Effects On Emerging Electronic Materials And Devices (2010) (0)
Defect Formation and Annihilation in Electronic Devices and the Role of Hydrogen (2008) (0)
ENHANCED DEFECT GENERATION IN GATE OXIDES OF P-CHANNEL MOS TRANSISTORS IN THE PRESENCE OF WATER By ARITRA DASGUPTA (2009) (0)
Elevated Temperature Irradiation at High Dose Rate of Commercial Linear Bipolar Integrated Circuits (2004) (0)
On the assessment of electrically active defects in high-mobility materials and devices (2016) (0)
ENHANCED DEFECT GENERATION IN GATE OXIDES OF P-CHANNEL MOS TRANSISTORS IN THE PRESENCE OF WATER By ARITRA DASGUPTA (2009) (0)
Space-Radiation Effects in Advanced SOI Devices and Alternative Gate Dielectrics (2003) (0)
Radiation Effects in 3 D Integrated SOl SRAM Circuits (2011) (0)
Pulsed Laser-Induced Single-Event Transients in InGaAs FinFETs with sub-10-nm Fin Widths (2019) (0)
Radiation-Induced Transient Response Mechanisms in Photonic Waveguides (2022) (0)
The foundations of Shockley's equation for the average electron–hole-pair creation energy in semiconductors (2022) (0)
Effective Small-Satellite Radiation Assurance for Non-Specialists (2019) (0)
Investigation of Alpha Emissivity as a Function of Time (2015) (0)
Total-Ionizing-Dose Effects at Ultra-High Doses in AlGaN/GaN HEMTs (2023) (0)
Pulsed-laser transient testing with tunable wavelength and high resolution for high mobility MOSFETs (2016) (0)
Model-Based Assurance Case+ (MBAC+): Tutorial on Modeling Radiation Hardness Assurance Activities (2017) (0)

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