Russel D. Dupuis

Russel D. Dupuis's AcademicInfluence.com Rankings

Russel D. Dupuis

Engineering

#5269

World Rank

#6517

Historical Rank

#1187

USA Rank

Photonics

#50

World Rank

#51

Historical Rank

USA Rank

Electrical Engineering

#1451

World Rank

#1545

Historical Rank

#253

USA Rank

engineering Degrees

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Engineering

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Russel D. Dupuis's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Quantum-well heterostructure lasers (1980) (457)
GaN avalanche photodiodes (2000) (241)
Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells (2009) (230)
Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates. (2005) (223)
Ordered Nanowire Array Blue/Near‐UV Light Emitting Diodes (2010) (217)
History, Development, and Applications of High-Brightness Visible Light-Emitting Diodes (2008) (206)
Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer (2010) (191)
Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN (1998) (184)
Room‐temperature laser operation of quantum‐well Ga(1−x)AlxAs‐GaAs laser diodes grown by metalorganic chemical vapor deposition (1978) (156)
Room‐temperature operation of Ga(1−x)AlxAs/GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition (1977) (131)
Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes (2008) (130)
Improved solar-blind detectivity using an AlxGa1−xN heterojunction p–i–n photodiode (2002) (127)
Photonic crystal nanobeam lasers (2010) (124)
Density-controlled growth of aligned ZnO nanowires sharing a common contact: a simple, low-cost, and mask-free technique for large-scale applications. (2006) (117)
Carrier collection in a semiconductor quantum well (1978) (107)
GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition (2006) (105)
Temperature dependence of threshold current for quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes (1980) (101)
Gallium nitride and related materials (1996) (97)
Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes (2010) (93)
Very low dark current metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers (1997) (92)
Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers (2012) (87)
Current transport mechanisms in GaN-based metal–semiconductor–metal photodetectors (1998) (86)
Back illuminated AlGaN solar-blind photodetectors (2000) (86)
Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates (1987) (84)
Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate (2013) (83)
Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition (1999) (82)
Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates (2014) (81)
Performance of Deep Ultraviolet GaN Avalanche Photodiodes Grown by MOCVD (2007) (76)
Metalorganic Chemical Vapor Deposition of III-V Semiconductors (1984) (73)
Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition (1998) (71)
Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN (1998) (71)
Electrical characteristics of contacts to thin film N-polar n-type GaN (2008) (68)
Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates (2009) (65)
Phonon‐sideband MO‐CVD quantum‐well AlxGa1−xAs‐GaAs heterostructure laser (1979) (64)
Control of quantum-confined Stark effect in InGaN∕GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes (2008) (62)
Preparation and properties of Ga 1-x Al x As-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition (1979) (61)
Rethinking phonons: The issue of disorder (2017) (61)
Time-resolved electroabsorption measurement of the transient electron velocity overshoot in GaN (2001) (61)
High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching (2000) (59)
Phonon‐assisted recombination and stimulated emission in quantum‐well AlxGa1−xAs‐GaAs heterostructures (1980) (59)
Room‐temperature continuous operation of photopumped MO‐CVD AlxGa1−xAs‐GaAs‐AlxGa1−xAs quantum‐well lasers (1978) (56)
Room-temperature continuous photopumped laser operation of coupled InP quantum dot and InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructures (2001) (56)
Bandgap bowing in BGaN thin films (2008) (56)
Continuous 300 °K laser operation of single‐quantum‐well AlxGa1−xAs‐GaAs heterostructure diodes grown by metalorganic chemical vapor deposition (1979) (54)
Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate (2015) (52)
Very low threshold Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition (1978) (52)
Low‐threshold continuous laser operation (300–337 °K) of multilayer MO‐CVD AlxGa1−xAs‐GaAs quantum‐well heterostructures (1978) (51)
Epitaxial growth of III–V nitride semiconductors by metalorganic chemical vapor deposition (1997) (50)
Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions (2014) (50)
Growth of high‐quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition (2015) (48)
Environmental degradation of AlxGa1−xAs‐GaAs quantum‐well heterostructures (1990) (48)
Ga(1−x)AlxAs/Ga(1−y)AlyAs double‐heterostructure room‐temperature lasers grown by metalorganic chemical vapor deposition (1977) (47)
Low dark current GaN avalanche photodiodes (2000) (47)
Crystal synthesis, electrical properties, and spontaneous and stimulated photoluminescence of In1−xGaxP:N grown from solution (1973) (46)
Coupled InP quantum-dot InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructure diode laser operation (2001) (46)
Solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors (2000) (46)
Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes (2006) (45)
Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition (2008) (45)
Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications (2012) (45)
Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating (2014) (45)
Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substrates (1987) (44)
Widely tunable mid-infrared quantum cascade lasers using sampled grating reflectors. (2012) (44)
AlGaAs-GaAs lasers grown by metalorganic chemical vapor deposition — A review (1981) (44)
Toward the development of miniaturized imaging systems for detection of pre-cancer (2002) (43)
Electrical properties of polycrystalline GaAs films (1980) (43)
High-efficiency GaAlAs/GaAs heterostructure solar cells grown by metalorganic chemical vapor deposition (1977) (43)
Selective regrowth of Al0.30Ga0.70N p–i–n photodiodes (2000) (43)
Continuous room‐temperature operation of Ga(1−x)AlxAs‐GaAs double‐heterostructure lasers grown by metalorganic chemical vapor deposition (1978) (42)
Direction-dependent band nonparabolicity effects on high-field transient electron transport in GaN (2003) (41)
Spontaneous and stimulated photoluminescence on nitrogen A‐line and NN‐pair line transitions in GaAs1−x Px : N (1972) (41)
Low-threshold high-efficiency AlGaAs-GaAs double-heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition (1987) (40)
Al0.5Ga0.5As‐GaAs heterojunction phototransistors grown by metalorganic chemical vapor deposition (1979) (40)
Low-noise photodetectors based on heterojunctions of AlGaN–GaN (2001) (40)
Improved ultraviolet quantum efficiency using a semitransparent recessed window AlGaN/GaN heterojunction p-i-n photodiode (1999) (39)
High performance GaN pin rectifiers grown on free-standing GaN substrates (2006) (39)
Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors (2011) (39)
An introduction to the development of the semiconductor laser (1987) (39)
Metalorganic chemical vapor deposition growth of high-quality InAs∕GaSb type II superlattices on (001) GaAs substrates (2006) (39)
High‐quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition (1994) (38)
Thermal characterization of gallium nitride p-i-n diodes (2018) (38)
The effect of substrate misorientation on the photoluminescence properties of GaN grown on sapphire by metalorganic chemical vapor deposition (1996) (38)
Design and Analysis of 250-nm AlInN Laser Diodes on AlN Substrates Using Tapered Electron Blocking Layers (2012) (38)
Improved device performance using a semi-transparent p-contact AlGaN/GaN heterojunction positive-intrinsic-negative photodiode (1999) (37)
High quantum efficiency metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers (1997) (37)
Ordering in bulk GaN : Mg samples: defects caused by Mg doping (1999) (37)
Effects of a step-graded AlxGa1−xN electron blocking layer in InGaN-based laser diodes (2011) (37)
Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition (2015) (37)
Bevel cross sectioning of ultra-thin (∼ 100 Å) III–V semiconductor layers (1979) (36)
Growth of Vertically Aligned ZnO Nanobelt Arrays on GaN Substrate (2008) (36)
Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors (2013) (36)
Very high-speed ultraviolet photodetectors fabricated on GaN (1998) (36)
EXPITAXIAL TILTING OF GAN GROWN ON VICINAL SURFACES OF SAPPHIRE (2005) (35)
Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice (2000) (35)
Abrupt Ga1−xAlxAs‐GaAs quantum‐well heterostructures grown by metalorganic chemical vapor deposition (1979) (35)
100‐nm thick single‐phase wurtzite BAlN films with boron contents over 10% (2017) (35)
Continuous room‐temperature multiple‐quantum‐well AlxGa1−xAs‐GaAs injection lasers grown by metalorganic chemical vapor deposition (1979) (34)
High-finesse resonant-cavity photodetectors with an adjustable resonance frequency (1996) (34)
Optimization of Fe doping at the regrowth interface of GaN for applications to III-nitride-based heterostructure field-effect transistors (2007) (33)
Crystal and luminescence properties of constant‐temperature liquid‐phase‐expitaxial In1−xGaxP (x [inverted lazy s]0.7) grown on (100) GaAs1−xPx(x [inverted lazy s]0.4) (1973) (33)
Transistor laser with emission wavelength at 1544nm (2008) (33)
Activation studies of low-dose Si implants in gallium nitride (1998) (33)
Bandfilling in metalorganic chemical vapor deposited AlxGa1−xAs‐GaAs‐AlxGa1−xAs quantum‐well heterostructure lasers (1978) (33)
Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes (2008) (33)
Properties of InGaN quantum-well heterostructures grown on sapphire by metalorganic chemical vapor deposition (1997) (33)
BAlN thin layers for deep UV applications (2015) (33)
In1−xGaxP p‐n Junction Lasers (1971) (33)
Effect of internal electrostatic fields in InGaN quantum wells on the properties of green light emitting diodes (2007) (32)
AlxGa1−xN Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than $10^{5}$ (2015) (32)
Phonon-assisted recombination and stimulated emission in multiple quantum-well Mo-CVD AlxGa1-xAs-GaAs heterostructures (Lz∽50Å, E1-1' -2× h̵ωLO⪅h̵ω (1979) (32)
Mode‐locked picosecond pulse generation from high power phase‐locked GaAs laser arrays (1984) (32)
High-performance back-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors (2000) (32)
Photoluminescence Associated with Multivalley Resonant States of the N Isoelectronic Trap in In 1-x Ga x P (1972) (32)
AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition (2000) (32)
High-voltage GaN pin vertical rectifiers with 2 /spl mu/m thick i-layer (2000) (31)
Compositional instability in strained InGaN epitaxial layers induced by kinetic effects (2011) (31)
MOVPE grown periodic AlN/BAlN heterostructure with high boron content (2015) (31)
Effect of thermal annealing induced by p-type layer growth on blue and green LED performance (2006) (31)
InAs/GaSb type-II superlattice structures and photodiodes grown by metalorganic chemical vapor deposition (2010) (30)
Blue light emitting diodes grown on freestanding (11-20) a-plane GaN substrates (2008) (30)
Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition (2000) (30)
Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications (2004) (30)
Photopumped laser operation of MO‐CVD AlxGa1−xAs near a GaAs quantum well (λ≳6200 Å, 77 °K) (1978) (30)
Optical beam characteristics of Schottky barrier confined arrays of phase-coupled multiquantum well GaAs lasers (1984) (30)
Geiger-Mode Operation of GaN Avalanche Photodiodes Grown on GaN Substrates (2009) (29)
Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors (2017) (29)
AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm (2015) (29)
Low dark current pin ultraviolet photodetectors fabricated on GaN grown by metal organic chemical vapour deposition (1998) (29)
Structural and optical characterization of type-II InAs/InAs1−xSbx superlattices grown by metalorganic chemical vapor deposition (2011) (29)
Single‐longitudinal‐mode cw room‐temperature Ga1−xAlxAs‐GaAs channel‐guide lasers grown by metalorganic chemical vapor deposition (1978) (29)
Controlled spontaneous emission in room‐temperature semiconductor microcavities (1992) (28)
High-speed pin ultraviolet photodetectors fabricated on GaN (1998) (28)
Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In0.46Ga0.54P quantum wells (2004) (28)
Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors (2001) (28)
Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition (2001) (28)
Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition (1987) (28)
Advances in materials, processing, and devices in III-V compound semiconductors (1989) (27)
Optical transitions in Pr-implanted GaN (1999) (27)
High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures (2009) (27)
Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction (2017) (27)
III-V semiconductor heterojunction devices grown by metalorganic chemical vapor deposition (2000) (27)
Effect of defect density on the electrical characteristics of n-type GaN Schottky contacts (1999) (27)
Graded-base InGaN∕GaN heterojunction bipolar light-emitting transistors (2006) (27)
An InAlAs/InGaAs metal‐oxide‐semiconductor field effect transistor using the native oxide of InAlAs as a gate insulation layer (1996) (26)
Nitride-Based Green Light-Emitting Diodes With Various p-Type Layers (2007) (26)
High quantum efficiency AlGaN/GaN solar-blind photodetectors grown by metalorganic chemical vapor deposition (2001) (26)
Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition (2011) (26)
Room‐temperature operation of distributed‐Bragg‐confinement Ga1−xAlxAs‐GaAs lasers grown by metalorganic chemical vapor deposition (1978) (26)
Graded-emitter AlGaN/GaN heterojunction bipolar transistors (2000) (26)
Mapping the electrostatic potential across AlGaN/AlN/GaN heterostructures using electron holography (2007) (26)
Growth and characterization of high-quality MOCVD AlGaAs/GaAs single quantum wells (1984) (26)
Solar-blind AlGaN 256x256 p-i-n detectors and focal plane arrays (2006) (26)
Influence of dopants on defect formation in GaN (2001) (26)
Improved detection of the invisible (1999) (26)
High‐quality single GaAs quantum wells grown by metalorganic chemical vapor deposition (1984) (25)
AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition (2003) (25)
High-performance solar-blind photodetector using an Al0.6Ga0.4N n-type window layer (2003) (25)
Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operation (2010) (25)
Improved solar-blind external quantum efficiency of back-illuminated AlxGa1−xN heterojunction pin photodiodes (2002) (25)
Radiative recombination of two-dimensional electrons in a modulation-doped Al0.37Ga0.63N/GaN single heterostructure (1999) (25)
AlGaN UV focal plane arrays (2001) (25)
Tunnel injection and phonon‐assisted recombination in multiple quantum‐well AlxGa1−xAs‐GaAs p‐n heterostructure lasers grown by metalorganic chemical vapor deposition (1979) (24)
Low resistance Ti/Au contacts to amorphous gallium indium zinc oxides (2011) (24)
Low threshold, optically pumped, room‐temperature laser oscillation at 0.88 μm from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Ge‐coated Si substrates (1986) (23)
Delta-doped AlGaN/AlN/GaN microwave HFETs grown by metalorganic chemical vapour deposition (2002) (23)
Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays (2016) (23)
Simulation of the electrical characteristics of high-voltage mesa and planar GaN Schottky and p-i-n rectifiers (2001) (23)
Strain-balanced InAs/GaSb type-II superlattice structures and photodiodes grown on InAs substrates by metalorganic chemical vapor deposition (2011) (23)
High-Current-Gain Direct-Growth GaN/InGaN Double Heterojunction Bipolar Transistors (2010) (22)
III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge (2008) (22)
Vanadium-based ohmic contacts to n-type Al0.6Ga0.4N (2004) (22)
Influence of TMAl preflow on AlN epitaxy on sapphire (2017) (22)
700‐h continuous room‐temperature operation of AlxGa1−xAs‐GaAs heterostructure lasers grown by metalorganic chemical vapor deposition (1979) (22)
Gratings with an aperiodic basis: single-mode emission in multi-wavelength lasers (2011) (21)
Determination of the indirect band edge of GaAs by quantum-well bandfilling (Lz∼100Å) (1978) (21)
Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application (2018) (21)
Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells (2015) (21)
Comparison of AlGaN p–i–n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates (2015) (21)
Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz (2004) (21)
Schottky barrier restricted arrays of phase‐coupled AlGaAs quantum well lasers (1984) (21)
Local conductivity and surface photovoltage variations due to magnesium segregation in p-type GaN (2004) (21)
Photonic crystal disk lasers. (2011) (21)
Photopumped red-emitting InP/In0.5Al0.3Ga0.2P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition (2001) (21)
Phonons in III–V nitrides: Confined phonons and interface phonons (2001) (21)
The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells (2013) (20)
High current gain InGaN/GaN HBTs with 300°C operating temperature (2006) (20)
Heavily‐doped n‐type InP and InGaAs grown by metalorganic chemical vapor deposition using tetraethyltin (1990) (20)
p-i-p-i-n Separate Absorption and Multiplication Ultraviolet Avalanche Photodiodes (2018) (20)
Optical phase shift measurement of residual defects in vapor epitaxial GaAsP (1971) (20)
Al $_{x}$ Ga $_{1-x}$ N Ultraviolet Avalanche Photodiodes Grown on GaN Substrates (2007) (20)
GaN full-vertical p-i-n rectifiers employing AlGaN:Si conducting buffer layers on n-SiC substrates (2006) (20)
Improved surface and structural properties of InAs∕GaSb superlattices on (001) GaSb substrate by introducing an InAsSb layer at interfaces (2007) (20)
P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor deposition (1998) (20)
Effect of Silicon Doping in the Quantum-Well Barriers on the Electrical and Optical Properties of Visible Green Light-Emitting Diodes (2008) (20)
Optically pumped vertical-cavity surface-emitting laser at 374.9 nm with an electrically conducting n-type distributed Bragg reflector (2016) (20)
Room‐temperature photopumped operation of an InGaAs‐InP vertical cavity surface‐emitting laser (1990) (20)
NpN-GaN/InxGa1−xN/GaN heterojunction bipolar transistor on free-standing GaN substrate (2011) (19)
Quarter‐wave Bragg reflector stack of InP‐In0.53Ga0.47As for 1.65 μm wavelength (1990) (19)
Ultrasmooth GaN Etched Surfaces Using Photoelectrochemical Wet Etching and an Ultrasonic Treatment (1999) (19)
InP/InAlGaAs light-emitting transistors and transistor lasers with a carbon-doped base layer (2011) (19)
Growth of low resistivity p-type GaN by metal organic chemical vapour deposition (1997) (18)
Comparison of GaN and In0.04Ga0.96N p-Layers on the Electrical and Electroluminescence Properties of Green Light Emitting Diodes (2007) (18)
InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition (1986) (18)
Optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures grown by metalorganic chemical vapor deposition (2001) (18)
Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy (2009) (18)
High-density InP self-assembled quantum dots embedded in In0.5Al0.5P grown by metalorganic chemical vapor deposition (2001) (18)
Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates (2005) (18)
Stimulated Emission and Laser Operation (cw, 77°K) Associated with Deep Isoelectronic Traps in Indirect Semiconductors (1972) (17)
Photoluminescence studies of heteroepitaxial gaas on si (1988) (17)
Design Strategies for InGaN-Based Green Lasers (2010) (17)
Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition (2016) (17)
Optically Pumped In1−xGax P Platelet Lasers from the Infrared to the Yellow (8900−5800 Å, 77°K) (1972) (17)
GaN/InGaN avalanche phototransistors (2015) (17)
Low‐temperature operation of multiple quantum‐well AlxGa1−xAs‐GaAs p‐n heterostructure lasers grown by metalorganic chemical vapor deposition (1979) (17)
Strain management of AlGaN-based distributed Bragg reflectors with GaN interlayer grown by metalorganic chemical vapor deposition (2016) (17)
Simulation of the electrical characteristics of AlGaN/GaN heterojunction bipolar transistors (2000) (16)
Carrier transport mechanism of low resistance Ti/Al/Au ohmic contacts to AlInN/GaN heterostructures (2013) (16)
Ohmic contacts to Al-rich n-AlGaN (2002) (16)
Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow (2017) (16)
TEM Study of Defects in Laterally Overgrown GaN Layers (1998) (16)
High-Quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition (1995) (16)
Modulation of high current gain (β>49) light-emitting InGaN∕GaN heterojunction bipolar transistors (2007) (16)
Low-noise solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors (2001) (16)
Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes (2010) (16)
Solar-blind AlGaN 256×256 p-i-n detectors and focal plane arrays (2006) (16)
Growth of InGaN HBTs by MOCVD (2006) (15)
AlGaN-Based Vertical Injection Laser Diodes Using Inverse Tapered p-Waveguide for Efficient Hole Transport (2014) (15)
Temperature-Dependent Characteristics of GaN Homojunction Rectifiers (2015) (15)
Low on-resistance GaN pin rectifiers grown on 6H-SiC substrates (2007) (15)
Planar InGaAs PIN photodetectors grown by metalorganic chemical vapour deposition (1986) (15)
Electrical characterization of native-oxide InAlP/GaAs metal-oxide-semiconductor heterostructures using impedance spectroscopy (2004) (15)
Characteristics of Mg‐Doped GaN Grown by Metallorganic Chemical Vapor Deposition (1997) (15)
Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition (1998) (15)
Lateral Current Spreading in III-N Ultraviolet Vertical-Cavity Surface-Emitting Lasers Using Modulation-Doped Short Period Superlattices (2018) (15)
Resonant enhancement of the recombination probability associated with isoelectronic trap states in semiconductor alloys: In1−xGaxP:N laser operation (77 °K) in the yellow‐green (λ≲5560 Å, ℏ ω≳2.23 eV) (1972) (15)
Focus issue: Optics in LEDs for lighting. (2011) (14)
Hydrogen-related, deeply bound excitons in Mg-doped GaN films (2013) (14)
High-performance GaN and AlxGa1-xN ultraviolet avalanche photodiodes grown by MOCVD on bulk III-N substrates (2007) (14)
HIGH-REFLECTIVITY VISIBLE-WAVELENGTH SEMICONDUCTOR NATIVE OXIDE BRAGG REFLECTORS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION (1995) (14)
Facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (<1 percent/kh) at 70°C (1983) (14)
Surface Leakage in GaN/InGaN Double Heterojunction Bipolar Transistors (2009) (14)
Properties of InP self-assembled quantum dots embedded in In0.49(AlxGa1−x)0.51P for visible light emitting laser applications grown by metalorganic chemical vapor deposition (2002) (14)
Visible spectrum (654 nm) room temperature continuous wave InP quantum dot coupled to InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructure laser (2002) (14)
Activation of silicon ion-implanted gallium nitride by furnace annealing (1999) (13)
III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors (2017) (13)
Spectral and intensity dependence on dipole localization in Fabry–Perot cavities (1992) (13)
Temperature-dependent resonance energy transfer from semiconductor quantum wells to graphene. (2015) (13)
Working toward high-power GaN/InGaN heterojunction bipolar transistors (2013) (13)
Photoexcited resonance-enhanced nitrogen-trap GaAs 1-x P x :N laser (1973) (13)
Effect of Si delta doping on the luminescence properties of InP/InAlP quantum dots (2003) (13)
Optically pumped AlGaN quantum‐well lasers at sub‐250 nm grown by MOCVD on AlN substrates (2014) (13)
50th Anniversary of the Light-Emitting Diode (LED): An Ultimate Lamp [Scanning the Issue] (2013) (13)
InAlGaAs∕InP light-emitting transistors operating near 1.55μm (2008) (13)
Time-Resolved Reflectivity Studies of Carrier Dynamics as a Function of Al Content in AlGaN Alloys (2001) (12)
Temperature-Dependent Leakage Current Characteristics of Homojunction GaN p-i-n Rectifiers Using Ion-Implantation Isolation (2019) (12)
Metalorganic chemical vapor deposition growth and characterization of InGaP/GaAs superlattices (2006) (12)
Er-doped AlGaAs native oxides: photoluminescence characterization and process optimization (2002) (12)
The effect of substrate misorientation on the optical, structural, and electrical properties of GaN grown on sapphire by MOCVD (1997) (12)
InGaAsP/InP double heterostructure lasers grown by atmospheric-pressure MOCVD (1985) (12)
Characteristics of Green Light-Emitting Diodes Using an InGaN:Mg/GaN:Mg Superlattice as p-Type Hole Injection and Contact Layers (2008) (12)
Quantum-well Al x Ga 1 - x As-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition (1979) (12)
Digitally alloyed modulated precursor flow epitaxial growth of AlxGa1−xN layers with AlN and AlyGa1−yN monolayers (2009) (11)
Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters (2015) (11)
High-Responsivity GaN/InGaN Heterojunction Phototransistors (2016) (11)
ULTRAVIOLET PHOTODETECTORS BASED UPON III-N MATERIALS (2003) (11)
In1−x Gax P:N Laser Operation (cw, 77°K) on the Nitrogen A‐Line Transition in Indirect Crystals (x ≥ 0.74) and in Direct Crystals above the Fundamental Band Edge (x ≥ 0.71) (1972) (11)
Imaging and local current transport measurements of AlInP quantum dots grown on GaP (2000) (11)
AlGaN-GaN UV light-emitting diodes grown on SiC by metal-organic chemical vapor deposition (2002) (11)
Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures (2017) (11)
Optical data storage in InGaN/GaN heterostructures (1997) (11)
Effect of the InAlGaP matrix on the growth of self-assembled InP quantum dots by metalorganic chemical vapor deposition (2003) (11)
InAlP/InGaP strain‐modulated aperiodic superlattice heterobarrier for enhanced electron confinement in visible (λ∼650 nm) light‐emitting devices (1995) (11)
Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate (2017) (11)
Characterization of GaP/InGaP and GaP/GaAsP strained-layer quantum wells grown by metalorganic chemical vapor deposition (1994) (11)
Theoretical analysis of single‐mode AlGaAs‐GaAs double heterostructure lasers with channel‐guide structure (1982) (11)
Metal organic chemical vapor deposition of metaphorphic InAs GaSb superlattices on (0 0 1) GaAs substrates for mid-IR photodetector applications (2006) (11)
Ohmic contacts to p-type Al0.45Ga0.55N (2004) (10)
Degradation of GaAs lasers and light-emitting diodes on silicon substrates (1988) (10)
High Quantum Efficiency at Low Bias AlxGa1–xN p–i–n Photodiodes (2001) (10)
Very smooth AlGaAs-GaAs quantum wells grown by metalorganic chemical vapor deposition (1992) (10)
Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation (2014) (10)
Room and low temperature study of common emitter current gain in AlGaN/GaN heterojunction bipolar transistors (2001) (10)
GaN ultraviolet avalanche photodiodes fabricated on free-standing bulk GaN substrates (2008) (10)
Observation of resonant tunneling through a quantized state in InP quantum dots in a double-barrier heterostructure (2000) (10)
Device operation of InGaN heterojunction bipolar transistors with a graded emitter-base design (2006) (10)
32/spl times/32 ultraviolet Al/sub 0.1/Ga/sub 0.9/N/GaN p-i-n photodetector array (2000) (10)
Theory and Design of Electron Blocking Layers for III-N Based Laser Diodes by Numerical Simulation (2018) (9)
X-ray diffraction studies of high-quality GaN heteroepitaxial films grown by metal organic chemical vapour deposition (1994) (9)
GaN ultraviolet avalanche photodiodes grown on 6H-SiC substrates with SiN passivation (2008) (9)
SHORT-WAVELENGTH ROOM-TEMPERATURE CONTINUOUS-WAVE LASER OPERATION OF INALP-INGAP SUPERLATTICES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION (1994) (9)
Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition (2008) (9)
Long-wavelength strain-compensated GaAsSb quantum-well heterostructures laser grown by metalorganic chemical vapor deposition (2003) (9)
Visible‐spectrum (λ=650 nm) photopumped (pulsed, 300 K) laser operation of a vertical‐cavity AlAs–AlGaAs/InAlP–InGaP quantum well heterostructure utilizing native oxide mirrors (1995) (9)
Control of Zn diffusion in InP/InAlGaAs-based heterojunction bipolar transistors and light emitting transistors (2008) (9)
Epitaxial Growth and Device Design Optimization of Full-Vertical GaN p-i-n Rectifiers (2007) (9)
A Surface Treatment Technique for III-N Device Fabrication (2008) (9)
Effect of Growth Temperature on the Electron-Blocking Performance of InAlN Layers in Green Emitting Diodes (2010) (9)
The growth of AlGaAs-GaAs lasers on Si substrates by metalorganic chemical vapor deposition (1988) (9)
Tunneling injection quantum-dot lasers with polarization-dependent photon-mediated carrier redistribution and gain narrowing (2005) (9)
Resonant‐cavity photodiode operating at 1.55 μm with Burstein‐shifted In0.53Ga0.47As/InP reflectors (1996) (9)
Dynamics of localized excitons in InGaN/GaN quantum wells (1998) (9)
Growth of high-quality InAlP/InGaP quantum wells and InAlP/InGaP superlattice barrier cladding layers by metalorganic chemical vapor deposition (1994) (9)
Effects of thermally grown native oxides on the luminescence properties of compound semiconductors (1996) (8)
Electrical characteristics and thermal stability of W, WSiN, and Nb contacts to p- and n-type GaN (1999) (8)
High-power (AlGa)As strip-buried heterostructure lasers (1985) (8)
Two-wavelength disordered quantum-well photodetector (1988) (8)
High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition (2007) (8)
Modulated precursor flow epitaxial growth of ternary AlGaN by metalorganic chemical vapor deposition (2008) (8)
Growth and characterization of InxGa1−xN alloys by metalorganic chemical vapor deposition for solar cell applications (2012) (8)
Gain narrowing and output behavior of InP-InGaAlP tunneling injection quantum-dot-well laser (2005) (8)
Improved Performance of AlGaN/GaN Heterojunction Field-Effect Transistors Using Delta Doping and a Binary Barrier (2003) (8)
The growth and characterization of AlGaAs double heterostructures for the evaluation of reactor and source quality (1995) (8)
Tunneling injection quantum dot lasers (2005) (8)
High Reflectivity Hybrid AlGaN/Silver Distributed Bragg Reflectors for Use in the UV-Visible Spectrum (2017) (8)
Annealing behavior of luminescence from erbium-implanted GaN films (2001) (8)
InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading and multiplication regions grown by metalorganic chemical vapour deposition (1986) (8)
Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates (2001) (8)
Polarization Matching in AlGaN-Based Multiple-Quantum-Well Deep Ultraviolet Laser Diodes on AlN Substrates Using Quaternary AlInGaN Barriers (2012) (8)
High-efficiency, dual-wavelength, wafer-fused resonant-cavity photodetector operating at long wavelengths (1995) (8)
Development for ultraviolet vertical cavity surface emitting lasers (2014) (8)
Carrier transport properties of Mg-doped InAlN films (2012) (8)
Lattice vibration modes in type-II superlattice InAs/GaSb with no-common-atom interface and overlapping vibration spectra (2015) (8)
Stimulated emission at 257 nm from optically‐pumped AlGaN/AlN heterostructure on AlN substrate (2013) (8)
Green light‐emitting diodes with p‐InGaN:Mg grown on c ‐plane sapphire and GaN substrates (2009) (7)
Actual temperatures of growing surfaces of III-nitride-based materials depending on substrates and forced convection conditions in metal organic chemical vapor deposition (2009) (7)
Optically Pumped Volume‐Excited cw Room‐Temperature In1−x Gax P (x ≤ 0.60) Platelet Lasers (1972) (7)
Visible spectrum light-emitting transistors (2006) (7)
Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition (2011) (7)
Erratic dislocations within funnel defects in AlN templates for AlGaN epitaxial layer growth (2009) (7)
Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production (2019) (7)
Current transport in InP/In0.5(Al0.6Ga0.4)0.5P self-assembled quantum dot heterostructures using ballistic electron emission microscopy/spectroscopy (2002) (7)
The diode laser: The first 30 days, 40 years ago (2004) (7)
Al$_{x}$Ga$_{1-x}$N Ultraviolet Avalanche Photodiodes Grown on GaN Substrates (2007) (7)
Temperature-dependent luminescence of InP quantum dots coupled with an InGaP quantum well and of InP quantum dots in a quantum well (2005) (7)
Growth of InP quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition (2003) (7)
GaN/InGaN heterojunction bipolar transistors with ultra‐high d.c. power density (>3 MW/cm2) (2012) (7)
Electroluminescence at GaN and Ga xIn 1-xN electrodes in aqueous electrolytes (1999) (7)
Electrical Characteristics of Metal Contacts to Laser-Irradiated N-Polar n-Type GaN (2009) (7)
Stimulated Emission and Laser Operation (cw, 77°K) of Direct and Indirect GaAs1−xPx on Nitrogen Isoelectronic Trap Transitions (1972) (7)
Surface treatment on the growth surface of semi-insulating GaN bulk substrate for III-nitride heterostructure field-effect transistors (2008) (7)
Epitaxial Structure Design of a Long-Wavelength InAlGaAs/InP Transistor Laser (2011) (7)
The structural quality of AlxGa1−xN epitaxial layers grown by digitally alloyed modulated precursor epitaxy determined by transmission electron microscopy (2009) (6)
Picosecond photoinduced reflectivity studies of GaN prepared by lateral epitaxial overgrowth (1999) (6)
Enhanced hot‐carrier spontaneous and stimulated recombination in a photopumped vertical cavity AlxGa1−xAs–GaAs quantum well heterostructure with multiple top and bottom native oxide mirrors (1995) (6)
Thermal Design Considerations for III-N Vertical-Cavity Surface-Emitting Lasers Using Electro-Opto-Thermal Numerical Simulations (2019) (6)
Isoelectronic trap transitions in GaAs1−xPx:N in the region of resonant enhancement (ENN ∼ EΓ, 0.3 (1973) (6)
Development of III-N UVAPDs for ultraviolet sensor applications (2013) (6)
Digital etching of III-N materials using a two-step Ar/KOH technique (2006) (6)
Growth and characterization of NpN heterojunction bipolar transistors with In0.03Ga0.97N and In0.05Ga0.95N bases (2011) (6)
Double-waveguide quantum cascade laser (2012) (6)
Study of deleterious aging effects in GaN/AlGaN heterostructures (2003) (6)
Photodetectors: UV to IR (2003) (6)
Ga1-xAlxAs-GaAs Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition (1979) (6)
Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280nm (2015) (6)
Band lineup of pseudomorphic GaAs1−xSbx quantum-well structures with GaAs, GaAsP, and InGaP barriers grown by metal organic chemical vapor deposition (2006) (6)
Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition (2015) (6)
The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition (2000) (6)
Very high current gain InGaAs/InP heterojunction bipolar transistors grown by metalorganic chemical vapour deposition (1991) (6)
III-N High-Power Bipolar Transistors (2013) (6)
Tin-doped n/sup +/ InP and GaInAs grown by atmospheric-pressure MOCVD (1989) (6)
Theory and Design of Electron Blocking Layers for III-N-Based Laser Diodes by Numerical Simulation (2018) (6)
Compositional shift in AlxGa1−xN beneath annealed metal contacts (2004) (6)
High current gain InGaN/GaN HBTs with 300/spl deg/C operating temperature (2006) (5)
Band Structure Effects on the Transient Electron Velocity Overshoot in GaN (2001) (5)
High-power picosecond pulse generation in GaAs multiquantum well phase-locked laser arrays using pulsed current injection (1984) (5)
Characterization of AlGaN/GaN Heterostructures Grown by Metalorganic Chemical Vapor Deposition (1999) (5)
In0.47Ga0.53As-InP heterostructures for vertical cavity surface emitting lasers at 1.65 μm wavelength (1991) (5)
Optical Properties of Strain‐balanced InAs/InAs1‐xSbx Type‐II Superlattices (2011) (5)
High quantum efficiency AlxGa1-xN/GaN-based ultraviolet p-i-n photodetectors with a recessed window structure (2000) (5)
GaN/InGaN Heterojunction Bipolar Transistors With $f_{T} > \hbox{5}\ \hbox{GHz}$ (2011) (5)
Spectral interference effects in the light emission from Fabry–Perot cavities (1993) (5)
Metalorganic Chemical Vapor Deposition (MOCVD) (2003) (5)
Improved area density and luminescence properties of InP quantum dots grown on In0.5Al0.5P by metal-organic chemical vapor deposition (2003) (5)
Demonstration of uniform and reliable GaN p-i-p-i-n separate-absorption and multiplication ultraviolet avalanche photodiode arrays with large detection area (2019) (5)
Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer (2013) (5)
Metal-organic chemical vapour deposition growth of InAs/GaSb type-II superlattice photodiodes (2010) (4)
Effect on spontaneous emission of quantum well placement in a short vertical cavity (1992) (4)
IIa-9 room-temperature operation of Ga(1-x)AlxAs/GaAs double heterostructure lasers grown by metalorganic chemical vapor deposition (late paper) (1977) (4)
Photoluminescence properties of Zn-doped heterostructures having native-oxide layers (2000) (4)
High performance GaN/AlGaN ultraviolet avalanche photodiode detector technologies (2019) (4)
Incorporation of indium and gallium in atomic layer epitaxy of InGaAs on InP substrates (2011) (4)
Electrical Characteristics of Pt Schottky Contacts on AlInN:Mg/GaN Heterostructures (2013) (4)
Experimental demonstration of the polarization-dependent photon-mediated carrier redistribution in tunneling injection InP quantum-dot lasers with external-grating feedback (2007) (4)
GaN and AlxGa1—xN p–i–n High‐Voltage Rectifiers Grown by Metalorganic Chemical Vapor Deposition (2001) (4)
WITHDRAWN: Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth (2013) (4)
Geiger mode simulation of GaN homojunction avalanche photodetectors (2009) (4)
High-efficiency, dual-wavelength, wafer-fused resonant-cavity photodetector operating at long wavelengths (1995) (4)
Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition (2000) (4)
Luminescence characteristics of InAlPInGaP heterostructures having native-oxide windows (1997) (4)
NANOSCALE STRUCTURE AND CHEMISTRY OF AL0.49IN0.51P THERMAL OXIDE (1999) (4)
Development of high gain avalanche photodiodes for UV imaging applications (2015) (4)
High‐performance GaN/InGaN double heterojunction bipolar transistors with power density >240 kW/cm2 (2011) (4)
Dependence of Device Characteristics on the Intrinsic Material Properties of High‐Performance AlGaN/GaN HEMTs (1999) (4)
Atomic Scale Analysis of InGaN Multi-Quantum Wells (1999) (4)
High‐performance GaN/InGaN heterojunction bipolar transistors using a direct‐growth approach (2010) (4)
Mode switching in a multi-wavelength distributed feedback quantum cascade laser using an external micro-cavity (2014) (4)
Effect of thin strain-compensated Al0.6Ga0.4P layers on the growth of multiple-stacked InP/In0.5Al0.3Ga0.2P quantum dots (2006) (4)
Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors (2011) (4)
Effective Leakage Current Reduction in GaN Ultraviolet Avalanche Photodiodes With an Ion-Implantation Isolation Method (2021) (4)
Design of Ion-Implanted Junction Termination Extension for Vertical GaN Pin Rectifiers (2020) (4)
THIN SEMICONDUCTOR LASER TO THIN PLATELET OPTICAL COUPLER (1970) (4)
Mode‐coupling effects in thin platelet semiconductor lasers (1972) (3)
Design of a Resonant-Cavity-Enhanced p-i-n GaN/AlxGa1-xN Photodetector (2001) (3)
High-quality III-V nitrides grown by metalorganic chemical vapor deposition (1995) (3)
Traveling dipole domains in AlGaN/GaN heterostructures and the direct generation of millimeter‐wave oscillations (2011) (3)
Long‐Wavelength Shift in the Operation of Lightly Doped Semiconductor Lasers (1972) (3)
Development of high performance ultraviolet and near-infrared detector technologies (2018) (3)
Modulation-doped superlattice AlGaN barrier GaN/AlGaN HFETs (2004) (3)
GaN / InGaN Heterojunction Bipolar Transistors with Collector Current Density > 20 kA / cm 2 (2011) (3)
Low-Noise GaN p-i-n Avalanche Photodiodes for Ultraviolet Applications using an Ion-Implantation Isolation Technique (2020) (3)
Demonstration of uniform 6x6 GaN p-i-n UV avalanche photodiode arrays (2021) (3)
Growth of III-N materials and devices by metalorganic chemical vapor deposition (1999) (3)
Interface alloy mixing effect in the growth of self-assembled InP quantum dots on InAlGaP matrices by metalorganic chemical-vapor deposition (2005) (3)
Semiconductor UV photonics: feature introduction (2019) (3)
Growth of InAlAs self-assembled quantum dots on InAlGaAs∕InP for 1.55μm laser applications by metalorganic chemical vapor deposition (2006) (3)
Digitally Alloyed Modulated Precursor Flow Epitaxial Growth of Ternary AlGaN with Binary AlN and GaN Sub-Layers and Observation of Compositional Inhomogeneity (2010) (3)
Development of GaN/AlGaN APDs for UV imaging applications (2010) (3)
Room-temperature optically pumped AlGaN-AlN multiple-quantum-well lasers operating at <260nm grown by metalorganic chemical vapor deposition (2013) (3)
Effect of lattice‐matched InAlGaN electron‐blocking layer on hole transport and distribution in InGaN/GaN multiple quantum wells of visible light‐emitting diodes (2016) (3)
Photopumping of quantum well heterostructures at high or low Q: phonon-assisted laser operation (1990) (3)
NbN Capping Layer for Enhanced Thermal Processing of Group III-Nitride Semiconductor Devices (2017) (3)
Avalanche photodiodes with separate absorption and multiplication regions grown by metalorganic vapor deposition (1986) (3)
Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape (2021) (3)
8.5 Homojunction GaN p-i-n Rectifiers with Ultra-low On-state Resistance (2014) (3)
Reliability of photopumped AlxGa1−xAs–GaAs quantum well heterostructure lasers with top and bottom distributed native-oxide reflectors (2000) (3)
Resonant-cavity avalanche photodiodes and narrow spectral response photodiodes (1995) (3)
Future Aspects of MOCVD Technology for Epitaxial Growth of Semiconductors (2019) (3)
Performance evaluation of GaN/InGaN heterojunction phototransistors (2015) (3)
Analysis of GaN HBT structures for high power, high efficiency microwave amplifiers (2004) (3)
InGaN MQW green LEDs using p-InGaN and p-InGaN/p-GaN superlattices as p-type layers (2008) (3)
High-performance GaN/AlGaN-based ultraviolet photodetectors (2000) (2)
Optically pumped vertical-cavity surface-emitting lasers at 375 nm with air-gap/Al0.05Ga0.95N distributed Bragg reflectors (2019) (2)
Current status of GaN heterojunction bipolar transistors (2004) (2)
Properties of InP Self-Assembled Quantum Dots Embedded in In0.49(Al(x)Ga(1-x))0.51P Grown by Metalorganic Chemical Vapor Deposition (2001) (2)
III–V Semiconductor Quantum-Well Devices Grown by Metalorganic Chemical Vapor Deposition (2013) (2)
Investigation on the lasing characteristics of InAs/InGaAsP quantum dots with additional confinement structures (2014) (2)
Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition (2014) (2)
Growth Of InP By Metalorganic Chemical Vapor Deposition (MOCVD) (1982) (2)
Room temperature spontaneous emission in five‐micron‐long Fabry–Pérot vertical cavities (1993) (2)
Device performance of light emitting transistors with C-doped and Zn-doped base layers (2009) (2)
Back-illuminated solar-blind AlxGa1-xN p-i-n photodiodes (2002) (2)
The luminescence characteristics of GaN heteroepitaxial films (1996) (2)
(Invited) Ga1-xAlxAs–GaAs Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition (1980) (2)
Photodetectors: UV to IR (2003) (2)
Optically controlled varactor diode (1991) (2)
Growth of InP self-assembled quantum dots on strained and strain-relaxed Inx(Al0.6Ga0.4)1−xP matrices by metal-organic chemical vapor deposition (2006) (2)
Performance improvement of InGaN-based laser diodes by epitaxial layer structure design (2010) (2)
Performance Evaluation of III-Nitride Avalanche Photodiodes Grown on SiC and GaN Substrates (2007) (2)
Laser operation of GaAs1−xPx:N (x = 0.37, 77 °K) on photopumped NN3 pair transitions (1973) (2)
Growth of ternary InAlP and InGaP self-assembled quantum dots by metalorganic chemical vapor deposition (2003) (2)
Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high-power opto- and microelectronic applications (2014) (2)
Band alignment of B 0 . 14 Al 0 . 86 N / Al 0 . 7 Ga 0 . 3 N heterojunction (2017) (2)
Mode behavior of photopumped AlGaAs–GaAs lasers confined by oxide-semiconductor distributed Bragg reflectors (2000) (2)
MOCVD growth of InGaN:Mg for GaN/InGaN hbts (2005) (2)
Self-Assembled Iii-Phospide Quantum Dots Grown by Metalorganic Chemical Vapor Deposition (1999) (2)
GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition (2002) (2)
Tunneling Injection Quantum-Dot Lasers (2005) (2)
Raman study of lattice vibrations in type II superlattice InAs/InAs1-xSbx (2017) (2)
Contribution of long lived metastable states to the PL of InP dots in indirect band-gap barrier layers (2007) (2)
High-gain, high-speed InGaAs/InP heterojunction bipolar transistors (1990) (2)
Bipolar III-N high-power electronic devices (2013) (2)
Realizing crack-free high-aluminum-mole-fraction AlGaN on patterned GaN beyond the critical layer thickness (2022) (2)
Improved Hole Transport by ${\rm p}\hbox{-}{\rm In}_{x}{\rm Ga}_{1-x}{\rm N}$ Layer in Multiple Quantum Wells of Visible LEDs (2013) (2)
Development of stacked multiple bandgap solar cells (1979) (2)
Carbon and Silicon Background Impurity Control In Undoped Gan Layers Grown with Trimethylgallium and Triethylgallium Via Metalorganic Chemical Vapor Deposition (2022) (2)
Breakdown characteristics of deep-ultraviolet Al0.6Ga0.4N p-i-n avalanche photodiodes (2022) (2)
Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition (2000) (2)
The growth of AlxGa1−xAs-GaAs heterostructure lasers by metalorganic chemical vapor deposition (1980) (2)
PERFORMANCE ENHANCEMENT OF InGaN-BASED LASER DIODES USING A STEP-GRADED AlxGa1-xN ELECTRON BLOCKING LAYER (2011) (2)
InP and InAlP self-assembled quantum dots grown by metalorganic chemical vapor deposition (2000) (2)
Characteristics of Doping and Diffusion of Heavily Doped N and P type InP and InGaAs Epitaxial Layers grown by Metal Organic Chemical Vapor Deposition (1989) (2)
MP-B1 photopumped MO-CVD quantum-well Al x Ga 1-x As-GaAs-Al x Ga 1-x As heterostructure lasers (x = 0.4-0.6, L z ≥ 200 Å, T = 4.2-300 K) (1978) (2)
Radiative recombination in GaN/InGaN heterojunction bipolar transistors (2015) (2)
Ultraviolet microcavity light-emitting diode with ion-implanted current aperture (Conference Presentation) (2017) (2)
Electrical Characteristics of Ti/Al Contacts on AlInN:Mg/GaN Heterostructures (2013) (1)
Electron transport through strongly coupled AlInP/GaInP superlattices (2002) (1)
Growth of high-performance InP IMPATT diodes by metalorganic chemical vapor deposition (1999) (1)
Enhanced luminescence from InAlP-InGaP quantum wells with native-oxide windows (1996) (1)
High-Gain and Low-Dark Current GaN p-i-n Ultraviolet Avalanche Photodiodes Grown by MOCVD Fabricated Using Ion-Implantation Isolation (2021) (1)
IVB-2 facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (<1%/kh) at 70°C (1983) (1)
Properties of InGaN multiple-quantum-well heterostructures grown by metalorganic chemical vapor deposition (1998) (1)
GaN/AlGaN avalanche photodiode detectors for high performance ultraviolet sensing applications (2019) (1)
(Invited) III-Nitride Heterojunction Field-Effect Transistors and Heterojunction Bipolar Transistors for Next-Generation Power Electronics (2011) (1)
Thin films of gallium arsenide on low-cost substrates. Final report, July 5, 1976--July 2, 1977 (1977) (1)
Enhancement of potential barrier height by superlattice barriers in the InGaAsP/InP materials system (1995) (1)
WA-B5 narrow-base Al 0.5 Ga 0.5 As/GaAs heterojunction phototransistors grown by metalorganic chemical vapor deposition (1979) (1)
IIIb-4 high-efficiency GaAlAs/GaAs heterostructure solar cells grown by metalorganic chemical vapor deposition (1977) (1)
Avalanche photodiodes for high-resolution UV imaging applications (2011) (1)
Chapter 6:CVD of III-V Compound Semiconductors (2008) (1)
Optical properties of InGaN double heterostructures and quantum wells grown by metalorganic chemical vapor deposition (1997) (1)
Back illuminated solar-blind photodetectors (2000) (1)
High-performance resonant-cavity photodetectors (1995) (1)
Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures (2020) (1)
Corrections to “Lateral Current Spreading in III-N Ultraviolet Vertical-Cavity Surface-Emitting Lasers Using Modulation-Doped Short Period Superlattices” [Aug 18 Art. no. 2400507] (2019) (1)
Improved ultraviolet quantum efficiency using a transparent recessed window AlGaN/GaN heterojunction p-i-n photodiode (1999) (1)
AlGaN-Based Lateral Current Injection Laser Diodes Using Regrown Ohmic Contacts (2013) (1)
E-mode III-n high-voltage transistor development (2011) (1)
The properties of polycrystalline GaAs materials and devices for terrestrial photovoltaic energy conversion (1978) (1)
III-nitride vertical resonant cavity light-emitting diodes with hybrid air-gap/AlGaN-dielectric distributed Bragg reflectors (2019) (1)
lnP Self Assembled Quantum Dot Lasers Grown on GaAs Substrates by Metalorganic Chemical Vapor Deposition (1)
Contacts to High Aluminum Fraction p -type Aluminum Gallium Nitride (2002) (1)
STACKED MULTIPLE-BANDGAP SOLAR CELLS PREPARED BY CVD TECHNIQUES. (1980) (1)
Improved device performance using a semi-transparent p-contact AlGaN/GaN heterojunction p-i-n photodiode (1999) (1)
Thin films of gallium arsenide on low-cost substrates. Quarterly technical progress report No. 6 and topical report No. 2, January 1, 1978-April 1, 1978 (1978) (1)
New generation of distributed Bragg reflectors based on BAlN/AlN structures for deep UV-optoelectronic applications (2011) (1)
Growth of III‐Nitrides (2015) (1)
Development of small unit cell avalanche photodiodes for UV imaging applications (2012) (1)
III-nitride emitters and detectors for UV optoelectronic applications grown by metalorganic chemical vapor deposition (2019) (1)
Properties of InAlP native oxides supporting MOS inversion-layer behavior (2002) (1)
Tuning the morphology of InP self-assembled quantum structures grown on InAlP surfaces by metalorganic chemical vapor deposition (2005) (1)
Structural Defect-Related Photoluminescence in GaN (2003) (1)
Photoluminescence and recombination mechanisms in GaN Õ Al 0 . 2 Ga 0 . 8 N superlattice (2000) (1)
THE ISSUE 50 th Anniversary of the Light-Emitting Diode ( LED ) : An Ultimate Lamp (2013) (0)
The effects of InAlAs strained-superlattice barriers upon the properties of InGaAlAs/InP quantum wells and double heterostructures (1997) (0)
DARPA CMUVT Contract FA 2386-10-1-4152 Final Report Phase II (2013) (0)
Advanced Middle-UV Coherent Optical Sources (2013) (0)
Low-threshold room-temperature continuous-wave InP quantum dot coupled to InGaP quantum well heterorstructure lasers grown by metalorganic chemical vapor deposition (2003) (0)
Development of high-voltage GaN-based dc-dc converter for radio isotope micro-power systems (2010) (0)
Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors (2016) (0)
High–Efficiency Light–Emitting Diodes and Laser Diodes and the Development of “The Alloy Road” (2021) (0)
III-V nitrides and silicon carbide (2002) (0)
Extremely smooth AlGaAs‐GaAs quantum wells growth by metalorganic chemical vapor deposition (2008) (0)
GaN/InGaN Double Heterojunction Bipolar Transistors Using Direct-Growth Technology (2011) (0)
Fundamental Studies and Development of III-N Visible LEDs for High-Power Solid-State Lighting Applications (2012) (0)
The X-ray characterization of InGaN and AiGaN heterostructures for blue-light emitters (1997) (0)
Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin AlxGa1−xN Layers Grown by MOCVD (2000) (0)
The First 30 Days, 40 Years Ago (2004) (0)
High-Performance AIGaN and GaN Power Electronic Devices (2004) (0)
Measurement of carrier transport and dynamics in wide bandgap semiconductors using femtosecond pump-probe techniques (2001) (0)
Investigation of the optical properties of diluted boron-based alloys B(Al,Ga)N and their applications on innovative UV Distributed Bragg Reflectors (2011) (0)
The Growth of GaAs on Si Substrates by Metalorganic Chemical Vapor Deposition (1987) (0)
Optimizing the growth of vertically stacked InP/In/sub 0.5/Al/sub 0.3/Ga/sub 0.2/P quantum dots by metalorganic chemical vapor deposition (2003) (0)
Growth and characterization of InAlGaP superlattice lasers (1999) (0)
MP-B2 room-temperature operation of distributed-bragg-confinement Ga1-xAlxAs-GaAs lasers grown by metal-organic chemical vapor deposition (1978) (0)
ANALYSISOFGaNHBTSTRUCTURESFORHIGHPOWER,HIGH EFFICIENCYMICROWAVE AMPLIFIERS (2004) (0)
Growth of single-phase wurtzite BAlN with 7.2%-B contents (2016) (0)
Design and growth of strained-superlattice-barrier heterostructures for use in light-emitting devices (1997) (0)
Thin films of gallium arsenide on low-cost substrates. Quarterly technical progress report No. 5 and topical report No. 1, October 2, 1977-December 31, 1977 (1980) (0)
CuPt-Type Ordering of MOCVD In0.49Al0.51P (2002) (0)
Optical and structural characterization of InGaN quantum-well heterostructures grown by metalorganic chemical vapor deposition (1998) (0)
The Use of Tetraethyltin as an N Type Dopant Source in GAAs, ALGAAs, and ALAS for Lasers and Bragg Reflectors Grown by MOCVD (1994) (0)
III-N High-Power Electronic Devices (2013) (0)
Effect of the doping and the Al content on the microstructure and morphology of thin Al{sub x}Ga{sub 1{minus}x}N layers grown by MOCVD[Metal Organic Chemical Vapor Deposition] (2000) (0)
MOCVD growth and characterization of AlGaP/GaP/InGaP/GaP strained-layer single quantum wells (1994) (0)
The Search for Effective p-Type Material in GaN-Based Devices: Past, Present, and Future (2009) (0)
Tunneling injection quantum-dot laser: Theory and experiment (2004) (0)
Novel Approaches to High-Efficiency III-V Nitride Heterostructure Emitters for Next-Generation Lighting Applications (2004) (0)
Progress in Semiconductor Materials IV-Electronic and Optoelectronic Applications November 29-December 3 , 2004 Chairs (2004) (0)
Quantum Dots: Thermal Effect and Luminescence Properties (2014) (0)
Growth and Characteristics of AlGaN/GaN HBTs (2001) (0)
Room-Temperature Ga(1-x)AlxAs-GaAs Double Heterostructure Lasers Grown by Chemical Vapor Deposition (1978) (0)
Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin AlxGa1-xN Layers Grown by MOCVD. (1999) (0)
III-N Light Emitting Diodes for Energy Efficient Illumination (2011) (0)
Materials Development for Semiconductor Lasers (2012) (0)
Electroluminescence at GaN and GaxIn1-xN Electrodes in Aqueous Electrolytes. (1998) (0)
WA-B5 narrow-base Al<inf>0.5</inf>Ga<inf>0.5</inf>As/GaAs heterojunction phototransistors grown by metalorganic chemical vapor deposition (1979) (0)
Optically pumped low-threshold UV lasers (2015) (0)
Light amplification using semiconductors (1987) (0)
InP self-assembled quantum dots embedded in In/sub 0.5/Al/sub 0.3/Ga/sub 0.2/P grown on GaAs substrates by metalorganic chemical vapor deposition (2001) (0)
Principles and Applications of Metalorganic Chemical Vapor Deposition for the Growth of ih-V Compounds on Si Substrates (1988) (0)
Short-period Superlattice InAiP-InGaP Quantum-well Heterostructures (1994) (0)
GaN/AlGaN avalanche photodiode detector technology for high performance ultraviolet sensing applications (2020) (0)
Room Temperature, CW, Single Mode Laser. (1980) (0)
Development of high-efficiency stacked multiple-bandgap solar cells. Interim technical report 1 August 78-1 October 79 (1980) (0)
Optica l transition s in Pr-implante d GaN (1999) (0)
Vertical monolithic integration of quantum cascade lasers for high-power broadband applications (2012) (0)
Gallium Nitride and Related Materials, Symposium Proceedings Volume 395, (1996) (0)
Photoluminescence Studies of the Nitrogen Isoelectronic Trap in Gallium Arsenide-Phosphide and Indium-Gallium Phosphide (1973) (0)
Optical metastability in InGaN/GaN heterostructures (1998) (0)
Roomtemperature operation of distributedBraggconfinement Ga1−xAlxAs GaAs lasers grown by metalorganic chemical vapor deposition (2013) (0)
Dynamics of Localized Excitons in GaInN/GaN Quantum Wells (1998) (0)
Electronic Properties and Device Applications of III-V Compound Semiconductor Native Oxides (2006) (0)
III-nitride deep UV laser on sapphire substrate (2015) (0)
Formation and characterization of III-V native oxides for optoelectronic applications (1998) (0)
Antimony-Based Type-II Superlattice Photodetectors (2010) (0)
Effect of TMAl pretreatment of sapphire substrate on the properties of MOCVD grown AlN epilayers (2017) (0)
InP self assembled quantum dot lasers grown on GaAs substrates by metalorganic chemical vapor deposition (2001) (0)
Revisiting the theory of disordered alloy thermal conductivity (2017) (0)
Magnesium Doping Profile Control in p-GaN Layers Grown by Metalorganic Chemical Vapor Deposition (2022) (0)
(Invited) Carrier Dynamics and Photon Management for Improvement in Quantum Efficiencies of GaN-Based Visible Light-Emitting Diodes (2014) (0)
Very Smooth AiGaAs/GaAs Quantum-wells Grown By Metalorganic Chemical Vapor Disposition (1991) (0)
Thermal characterization of GaN vertical p-i-n diodes (2017) (0)
Development of (In)AlGaN-based UV laser diodes emitting at 369 nm (2021) (0)
Very Smooth AIGaAs-GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition (1992) (0)
Epitaxial Growth for Solar-Blind AlGaN Photodetector Imaging Arrays by Metalorganic Chemical Vapor Deposition (2002) (0)
Materials and Device Research for High-Speed Integrated Optoelectronic Transmitters Using Vertical-Cavity Surface-Emitting Lasers. (1996) (0)
Publisher’s Note: Growth and characterization of InxGa1−xN alloys by metalorganic chemical vapor deposition for solar cell applications (2012) (0)
2010 MNTL UIUC Symposium Lecture 2 - Optoelectronics (2010) (0)
TA-B9 1800-hour continuous operation of CW room-temperature AlxGa1-xAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition (1979) (0)
AlGaN-based MQWs emitting at 280nm for Vertical Cavity Surface Emitting Lasers (2015) (0)
High performance AlGaN heterostructure field-effect transistors (2007) (0)
MP-B1 photopumped MO-CVD quantum-well AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructure lasers (x = 0.4-0.6, Lz≥ 200 Å, T = 4.2-300 K) (1978) (0)
High-Performance GaN-Based Ultraviolet Photon Detection Technology (2021) (0)
Micro-Raman study of InAs/GaSb superlattices from front and cleaved edge (2013) (0)
Development of High-Efficiency Stacked Multiple-Bandgap Solar Cells. (1980) (0)
A STUDY OF EFFICIENCY DROOP OF GREEN LIGHT EMITTING DIODES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION (2011) (0)
Recent Advances in III-N High-Power Electronics (2012) (0)
Thin films of gallium arsenide on low-cost substrates. Quarterly technical progress report No. 8 and topical report No. 3, April 2-July 1, 1978 (1978) (0)
GaN and Al x Ga 1 - x N p-i-n High-Voltage Rectifiers Grown by Metalorganic Chemical Vapor Deposition (2001) (0)
AlGaN/GaN ultraviolet photodetectors (2000) (0)
MOCVD grown solar-blind photodetector arrays (2003) (0)
Thin films of gallium arsenide on low-cost substrates. Final technical report, July 5, 1976-December 5, 1978 (1980) (0)
Fundamental Study of Defects and Their Reduction in Type-II Superlattice Materials (2018) (0)
AlGaAs-GaAs heterojunction phototransistors for fiber-optical communications (1978) (0)
Improvement of luminescence properties of InGaP/InAlP QW heterostructures with oxidized InAlP cladding layers grown by MOCVD (1995) (0)
Development of high power NPN GaN/InGaN double-heterojunction bipolar transistor (2011) (0)
(Invited) Development of III-Nitride Bipolar Transistor Switches and Rectifiers (2017) (0)
Low-Temperature Geiger-Mode Characterization of a Gallium Nitride p-i-N Avalanche Photodiode (2023) (0)
CMUVT Contract N 00014-12-1-0443 Final Report Period of Performance : 01 February 2012-31 March 2013 (2013) (0)
Relationship of basal plane and prismatic stacking faults in GaN to low temperature photoluminescence peaks at ∼3.4 eV and ∼3.2 eV (2004) (0)
Multi-modal miniature microscopes for detection of pre-cancer (2000) (0)
(SBIR) AIGaN-GaN heterojunction field-effect transistors grown by MOCVD (2007) (0)
VCSEL and Smart Pixel Research for VLSI Photonics (2003) (0)
InP SELF-ASSEMBLED QUANTUM DOTS EMBEDDED IN Ino.5Alo.3G%.2P GROWN ON'GaAs SUBSTRATES BY METALORGANIC CHEMICAL VAPOR DEPOSITION (2001) (0)
Improvement of III-N surfaces after inductivity coupled plasma dry etch exposure (2005) (0)
Optical stimulated emission in AlGaN/InGaN ultraviolet multi-quantum-well structures (2019) (0)
Multi-stack quantum cascade lasers (2012) (0)
Low-threshold room-temperature Ga(1-x)AlxAs/GaAs lasers grown by metalorganic chemical vapor deposition (1977) (0)
Purchase of LayTec EpiTT Real-Time Optical Monitoring Equipment for In-Situ Control of Type II Superlattice Growth in an MOCVD System (2017) (0)
International Symposium on the Growth of III-Nitrides (ISGN), May 18-22, 2014, Atlanta GA (2015) (0)
Sapphire substrates slash the cost of deep UV lasers (2016) (0)
Low dark current metal-semiconductor-metal photodetectors fabricated on GaN (1997) (0)
CuPt-type ordering of MOCVD In{sub 0.49}Al{sub 0.51}P. (2002) (0)
Properties of GaAsSb QW Heterostructures Having Various Barrier Materials Grown by Metalorganic Chemical Vapor Deposition (2002) (0)
GaN/AlGaN avalanche photodiode detector technology for high performance ultraviolet sensing applications (2020) (0)
TA-B7 phonon-assisted recombination in quantum-well MO-CVD AlxGa1-xAs-GaAs heterostructure lasers (1979) (0)
Fundamental Research on Infrared Detection (2006) (0)
Growth and characterization of AlGaN/GaN heterostructures (1999) (0)
Planar InGaAs/InP photodiodes grown by metalorganic chemical vapor deposition (1985) (0)
Thin films of gallium arsenide on low-cost substrates. Quarterly project report No. 1, July 5--October 2, 1976 (1976) (0)
Effects of surface morphology and strain state of InAlGaP matrices on the growth of InP quantum dots by metalorganic chemical vapor deposition (2005) (0)
Thin films of gallium arsenide on low-cost substrates. Quarterly project report No. 3, January 2, 1977--April 2, 1977 (1977) (0)
Onset of deep UV surface stimulated emission from AlGaN multiple quantum wells (2016) (0)
Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness (2023) (0)
Metalorganic Chemical Vapor Deposition Growth of High-Quality InAs/GaSb Type II Superlattices for Mid-IR Photodetector Applications (2006) (0)
III-N Epitaxial Growth for Nitride Devices (2005) (0)
Long-wave photonic device with InGaAsSb quantum well layer (2002) (0)
Erratum: “High efficiency GaN-based light-emitting diodes fabricated on dielectric-mask-embedded structures” [Appl. Phys. Lett. 95, 011108 (2009)] (2009) (0)
Al0.6Ga0.4N p-i-n deep-ultraviolet avalanche photodiodes (2022) (0)
ONR CMUVT contract N00014-12-1-0443 (2013) (0)
Optoelectronic devices grown by metallorganic chemical vapor deposition (1987) (0)
Thin films of gallium arsenide on low-cost substrates. Quarterly project report No. 2, October 3, 1976--January 1, 1977 (1977) (0)
The effect of barrier materials on the band lineup in 1.3/spl mu/m GaAsSb QW heterostructures grown by MOCVD (2003) (0)
Influence of Mg and In on defect formation in GaN: bulk and MOCVD grown samples (2000) (0)
High Al mole fraction crack-free AlGaN on GaN for UV laser diodes by a non-planar growth approach (2022) (0)
The X . Ray Character izat ion of InGaN and AIGaN Heterostructures for BlueLight Emitters (0)
Photodetecteur a visualisation de bord (2006) (0)
Nick Holonyak Jr (2022) (0)
Mg Segregation, Difficulties of P-Doping in GaN (1999) (0)
Threshold Dependence on Cavity Length and Mirror Reflectivity in Fabry-Perot Microcavity Semiconductor Lasers with High Contrast Mirrors (1993) (0)
Low-threshold pulsed and continuous oscillation from AlGaAs/GaAs double-heterostructure lasers grown by MOCVD on Si substrates (1987) (0)
High Performance AlGaN / GaN HEMTs on Semi-Insulating SiC Substrates Grown by Metalorganic Chemical Vapor Deposition (2002) (0)
Growth and characterization of III-N ultraviolet lasers and avalanche photodiodes by MOCVD (2017) (0)
Two‐phonon laser operation (4.2–77 K) of photopumped AlxGa1−xAs‐GaAs quantum well heterostructures (1990) (0)
Preface: Phys. Status Solidi A 206/2 (2009) (0)

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