Sarah L. Keller

Sarah L. Keller's AcademicInfluence.com Rankings

Sarah L. Keller

Physics

#8927

World Rank

#11251

Historical Rank

physics Degrees

Download Badge

Physics

Sarah L. Keller's Degrees

PhD Physics University of California, Santa Barbara
Masters Physics University of California, Santa Barbara
Bachelors Physics University of California, Santa Barbara

Why Is Sarah L. Keller Influential?

(Suggest an Edit or Addition)

(See a Problem?)

Sarah L. Keller's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Electrical characterization of GaN p-n junctions with and without threading dislocations (1998) (324)
AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy (2001) (295)
Dislocation generation in GaN heteroepitaxy (1998) (265)
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES 3202 Controlled doping of phthalocyanine layers by cosublimation with acceptor molecules: A systematic Seebeck and conductivity study (1998) (251)
Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN (1996) (222)
Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition (1998) (221)
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak (2004) (199)
Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB (2001) (174)
Spin coherence and dephasing in GaN (2001) (169)
Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition (2007) (156)
Growth and characterization of bulk InGaN films and quantum wells (1996) (152)
Optical properties of InGaN quantum wells (1999) (149)
Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures (1999) (148)
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth (1999) (146)
Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition (2008) (140)
Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films (2003) (129)
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm (2011) (125)
12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate (2004) (117)
Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy (2000) (111)
Role of inclined threading dislocations in stress relaxation in mismatched layers (2005) (109)
Gallium nitride based transistors (2001) (105)
High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation (2004) (105)
Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers (2000) (105)
Growth and characterization of N-polar InGaN/GaN multiquantum wells (2007) (103)
Surface Potential at as‐Grown GaN(0001) MBE Layers (2002) (99)
Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells (2006) (95)
Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts (2005) (91)
Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition (1998) (91)
Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD (1998) (90)
Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs (2004) (88)
Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells (1998) (86)
HIGH MOBILITY TWO-DIMENSIONAL ELECTRON GAS IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (1999) (86)
High quality AlN grown on SiC by metal organic chemical vapor deposition (2008) (85)
Refractive index study of AlxGa1−xN films grown on sapphire substrates (2003) (83)
CATHODOLUMINESCENCE MAPPING OF EPITAXIAL LATERAL OVERGROWTH IN GALLIUM NITRIDE (1999) (82)
Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition (2008) (81)
Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence (1998) (80)
Femtosecond studies of carrier dynamics in InGaN (1997) (76)
Growth and characteristics of Fe-doped GaN (2003) (76)
Short-channel Al/sub 0.5/Ga/sub 0.5/N-GaN MODFETs with power density >3 W/mm at 18 GHz (1997) (73)
Accurate mobility and carrier concentration analysis for GaN (1997) (72)
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates (2006) (72)
Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs (2006) (70)
High power AlGaN/GaN HEMTs for microwave applications (1997) (70)
Radiative recombination lifetime measurements of InGaN single quantum well (1996) (69)
Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells (1998) (67)
Time-resolved photoluminescence of In x Ga 1 − x N / G a N multiple quantum well structures: Effect of Si doping in the barriers (2001) (65)
Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment (2006) (65)
Ultrafast electron dynamics study of GaN (1999) (64)
High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology (2003) (64)
Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD (1998) (61)
Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes (1998) (59)
Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope (2003) (59)
Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition (1997) (58)
Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition (2001) (57)
Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature (1997) (55)
Characterization of an AlGaN/GaN two-dimensional electron gas structure (2000) (55)
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation (2009) (54)
Measurement of second order susceptibilities of GaN and AlGaN (2005) (53)
Localized exciton dynamics in nonpolar (112¯0) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth (2005) (53)
Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures (2008) (51)
High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells (1998) (51)
MOVPE growth and characterization of Mg-doped GaN (1998) (49)
GAIN SPECTROSCOPY ON INGAN/GAN QUANTUM WELL DIODES (1997) (46)
A 3-10-GHz GaN-based flip-chip integrated broad-band power amplifier (2000) (46)
Selective-area regrowth of GaN field emission tips (1997) (46)
Femtosecond Z-scan measurement of GaN (1999) (44)
Low resistance ohmic contact to n-GaN with a separate layer method (1997) (44)
Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures (1997) (43)
Metalorganic chemical vapor deposition of highly conductive Al0.65Ga0.35N films (2003) (43)
Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates (2010) (43)
2.1 A/mm current density AlGaN/GaN HEMT (2003) (43)
Nonpolar a-plane p-type GaN and p-n Junction Diodes (2004) (42)
Selective area epitaxy of GaN for electron field emission devices (1997) (41)
Maskless lateral epitaxial overgrowth of high-aluminum-content AlxGa1−xN (2004) (39)
Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors (2001) (39)
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer (2009) (38)
Linear and nonlinear optical properties of In x Ga 1 − x N / G a N heterostructures (2000) (37)
Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells (1998) (36)
High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration (1999) (35)
Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes (2010) (34)
On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors (2016) (34)
GaN/AlGaN MODFET with 80 GHz f/sub max/ and >100 V gate-drain breakdown voltage (1997) (33)
Dominant role of the piezoelectric field in the pressure behavior of InGaN/GaN quantum wells (2001) (33)
GaN–GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design (2002) (33)
GaN field emitter array diode with integrated anode (1998) (33)
Nitride-based high electron mobility transistors with a GaN spacer (2006) (33)
Cracking of III-nitride layers with strain gradients (2006) (32)
The growth of N-face GaN by MOCVD: effect of Mg, Si, and In (2004) (31)
Scanning tunneling microscope-induced luminescence of GaN at threading dislocations (1999) (28)
Electrical characterization of p-type N-polar and Ga-polar GaN grown by metalorganic chemical vapor deposition (2007) (28)
Pump-probe spectroscopy of band tail states in metalorganic chemical vapor deposition-grown InGaN (1998) (27)
Ultrafast optical characterization of carrier capture times in InxGa1−xN multiple quantum wells (2000) (26)
Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect (2009) (25)
Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing (2004) (24)
Effect of atmospheric pressure MOCVD growth conditions on UV band-edge photoluminescence in GaN thin films (1995) (24)
Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy. (2006) (23)
Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design (2004) (22)
Improvement of GaN-based laser diode facets by FIB polishing (1998) (22)
Piezoelectric surface barrier lowering applied to InGaN/GaN field emitter arrays (1998) (21)
Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN∕GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth (2007) (21)
Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques (1997) (20)
Low-temperature scanning tunneling microscope-induced luminescence of an InGaN/GaN multiquantum well (1999) (19)
Metalorganic chemical vapor deposition of Al2O3 using trimethylaluminum and O2 precursors: Growth mechanism and crystallinity (2014) (19)
Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure (2000) (19)
Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells (2006) (19)
Cleaved GaN facets by wafer fusion of GaN to InP (1996) (18)
Strain relaxation of InxGa1−xAs during lateral oxidation of underlying AlAs layers (1999) (18)
AlGaN/GaN dual-gate modulation-doped field-effect transistors (1999) (18)
Structural and electrical characterization of a‐plane GaN grown on a‐plane SiC (2003) (18)
Spatial control of InGaN luminescence by MOCVD selective epitaxy (1998) (18)
Internal efficiency analysis of 280-nm light emitting diodes (2004) (18)
$f_{T}$ and $f_{\rm MAX}$ of 47 and 81 GHz , Respectively, on N-Polar GaN/AlN MIS-HEMT (2009) (18)
Annealing of C60o gamma radiation-induced damage in n-GaN Schottky barrier diodes (2007) (17)
Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN (2001) (17)
Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors (2001) (17)
Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition (2010) (17)
Time-resolved cathodoluminescence study of carrier relaxation, transfer, collection, and filling in coupled In x Ga 1 − x N ∕ Ga N multiple and single quantum wells (2007) (16)
Temperature dependence of exciton-surface plasmon polariton coupling in Ag, Au, and Al films on InxGa1−xN/GaN quantum wells studied with time-resolved cathodoluminescence (2015) (16)
Influence of silicon doping on vacancies and optical properties of AlxGa1−xN thin films (2007) (16)
Diffuse x-ray scattering from statistically inhomogeneous distributions of threading dislocations beyond the ergodic hypothesis (2008) (16)
Femtosecond pump-probe spectroscopy and time-resolved photoluminescence of an In x Ga 1 − x N / GaN double heterostructure (2001) (16)
Solar‐Blind p‐GaN/i‐AlGaN/n‐AlGaN Ultraviolet Photodiodes on SiC Substrate (2001) (15)
Chapter 2 Metalorganic Chemical Vapor Deposition (MOCVD) of Group III Nitrides (1997) (15)
Cleaved and etched facet nitride laser diodes (1998) (15)
Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts (2007) (15)
Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition (2003) (15)
Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration (1997) (14)
Excitation energy-dependent optical characteristics of InGaN/GaN multiple quantum wells (1998) (14)
Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation (2007) (14)
Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence (1998) (13)
Polarization induced 2DEG in MBE grown AlGaN/GaN HFETs: On the origin, DC and RF characterization (2000) (13)
Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition (2016) (12)
Reconfigurable optical properties in InGaN/GaN quantum wells (1997) (12)
GaN based microwave power HEMTs (1998) (12)
Indium surfactant assisted growth of AlN/GaN heterostructures by metal-organic chemical vapor deposition (2001) (11)
Influence of composition and well-width fluctuations on optical gain in (In, Ga)N multiple quantum wells (2001) (11)
Ultrashort hole capture time in Mg-doped GaN thin films (2002) (11)
Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz (2003) (11)
Dislocation reduction in GaN films through selective island growth of InGaN (2000) (11)
Impact ionization in N-polar AlGaN/GaN high electron mobility transistors (2014) (10)
MOCVD Growth of High Output Power Ingan Multiple Quantum Well Light Emitting Diode (1997) (10)
Increased power from deep ultraviolet LEDs via precursor selection (2007) (9)
Selective dry etching of GaN over AlGaN in BCl/sub 3//SF/sub 6/ mixtures (2004) (9)
Use of multichannel heterostructures to improve the access resistance and f/sub T/ linearity in GaN-based HEMTs (2004) (9)
High performance deeply-recessed GaN power HEMTs without surface passivation (2006) (8)
Electron Beam Pumped MQW InGaN/GaN Laser (1997) (8)
Two-dimensional electron gas transport anisotropy in N-polar GaN/AlGaN heterostructures (2011) (8)
Carrier relaxation dynamics and steady-state charge distributions in coupled InGaN∕GaN multiple and single quantum wells (2007) (7)
AlGaN/GaN HEMTs with an InGaN-based back-barrier (2005) (7)
InGaN/GaN nanopillar‐array light emitting diodes (2007) (7)
Growth and characterization of AlGaN/GaN/AlGaN field effect transistors (2010) (6)
A 3-10 GHz LCR-matched power amplifier using flip-chip mounted AlGaN/GaN HEMTs (2000) (6)
Mobility spectrum analysis of anisotropic electron transport in N-polar GaN/AlGaN heterostructures on vicinal sapphire substrates (2011) (6)
Observations of exciton–surface plasmon polariton coupling and exciton–phonon coupling in InGaN/GaN quantum wells covered with Au, Ag, and Al films (2015) (5)
Influence of the access resistance in the rf performance of mm-wave AlGaN/GaN HEMTs (2004) (5)
-Pulsed- Operation of -Cleaved-Facet- InGaN Laser -Diodes- (1997) (5)
Erratum: “AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy” [J. Appl. Phys. 90, 5196 (2001)] (2002) (4)
MOCVD growth of AlGaN films for solar blind photodetectors (2004) (4)
Effects of Carrier Localization on the Optical Characteristics of MOCVD‐Grown InGaN/GaN Heterostructures (1999) (4)
Improved high power thick-GaN-capped AlGaN/GaN HEMTs without surface passivation (2004) (4)
Progress in gallium nitride-based bipolar transistors (2001) (3)
GaN vertical n‐p junctions prepared by Si ion implantation (2008) (3)
Effect of the Confinement Layer Design on the Luminescence of InGaN/GaN Single Quantum Wells (1999) (3)
Temperature dependence of the current-voltage characteristics of AlGaN/GaN HEMT (2003) (3)
Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTs (2004) (3)
Time-resolved photoluminescence studies of GaN, InGaN, and AlGaN grown by metalorganic chemical vapor deposition (1999) (2)
Field emission from selectively regrown GaN pyramids (1996) (2)
Stimulated Emission and Gain Measurements from InGaN/GaN Heterostructures (1996) (2)
High speed devices (2009) (2)
AlGaN/GaN solar-blind ultraviolet photodiodes on SiC substrate (2000) (2)
A Comparison of the Optical Characteristics of AlGaN, GaN, and InGaN Thin Films (1999) (2)
Spatially direct and indirect transitions in InGaN/GaN structures with coupled quantum wells (2005) (2)
Cleaved Facets in Gan by Wafer Fusion of Gan to Inp (1996) (2)
Ion implantation for unalloyed ohmic contacts to AlGaN/GaN HEMTs (2004) (2)
Erratum: “Temperature dependence of exciton-surface plasmon polariton coupling in Ag, Au, and Al films on InxGa1−xN/GaN quantum wells studied with time-resolved cathodoluminescence” [J. Appl. Phys. 117, 043105 (2015)] (2015) (1)
Growth of High Quality (In,Ga,Al)N/GaN Heterostructure Materials and Devices by Atmospheric Pressure MOCVD (1996) (1)
AlGaN-GaN HEMTs and HBTs for microwave power (2000) (1)
Comparison of spontaneous and stimulated emission from UV-blue photonic materials (1999) (1)
"S-Shaped" Temperature Dependent Emission Shift and Carrier Dynamics in MOCVD-Grown InGaN/GaN Multiple Quantum Wells (1998) (1)
<formula formulatype="inline"><tex Notation="TeX">$f_{T}$</tex></formula> and <formula formulatype="inline"><tex Notation="TeX">$f_{\rm MAX}$</tex></formula> of 47 and 81 <emphasis emphasistype="roman">GHz </emphasis>, Respectively, on N-Polar GaN/AlN MIS-HEMT (2009) (1)
GaN characterizations using femtosecond optical pulses (1999) (1)
Temperature‐dependent high‐frequency performance of deep submicron AlGaN/GaN HEMTs (2008) (1)
High Voltage GaN HEMTs (1999) (1)
Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure (2000) (1)
Amplification Path Length Dependence Studies of Stimulated Emission from Optically Pumped InGaN/GaN Multiple Quantum Wells (1998) (1)
1 AMPLIFICATION PATH LENGTH DEPENDENCE STUDIES OF STIMULATED EMISSION FROM OPTICALLY PUMPED InGaN / GaN MULTIPLE QUANTUM WELLS (1998) (0)
Publisher’s Note: “Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing” [Appl. Phys. Lett. 85, 5254 (2004)] (2005) (0)
Critical issues of localization in the development of InGaN/GaN laser diodes (1999) (0)
Ultrafast Hole Capture Dynamics in Mg-doped GaN Thin Films (2002) (0)
AlGaN/GaN HEMTswithanInGaN-based back-barrier (2005) (0)
Pressure Studies in InGaN/GaN Quantum Wells (2001) (0)
Growth and characterization of InGaN/GaN double heterostructure LEDs grown by MOCVD (1995) (0)
MOCVD growth of InGaN multiple quantum well LEDs and laser diodes (1998) (0)
Vapor-phase epitaxy of gallium nitride by gallium arc discharge evaporation (2006) (0)
Nonlinear piezoelectric effect in InGaN/GaN quantum wells revealed at high pressures (2001) (0)
Bleaching dynamics of resonantly excited excitons in GaN thin films at room temperature (2002) (0)
MOCVD growth and fabrication of group-Ill nitrides for high-efficiency MQW LEDs (1997) (0)
Si doping effects on the electrical and structural properties of high Al composition AlxGa1−xN films grown by MOCVD (2003) (0)
Gain spectroscopy in lnGaN/GaN quantum well diodes (1997) (0)
Observation of coherent acoustic phonon oscillations in bulk gallium nitride (2001) (0)
Damage from stimulated emission in optically pumped GaInN multiple quantum wells (1998) (0)
Study of Stimulated Emission in InGaN/GaN Multi-Quantum Wells in the Temperature Range of 175 k to 575 k (1998) (0)
Barrier and well width study of InGaN/GaN multiple quantum wells (1997) (0)
Variation of structural and optical properties across an AlGaN/GaN HEMT structure directly imaged by cathodoluminescence microscopy (2003) (0)
Picosecond carrier transport and capture for InGaN/GaN single and multiple quantum wells (1999) (0)
Exciton dynamics in nonpolar (110) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth (2006) (0)
50 nm AlGaN/GaN HEMT Technology for mm-wave Applications (2006) (0)
INFLUENCE OF BARRIER DOPING AND BARRIER COMPOSITION ON OPTICAL GAIN IN (IN, GA)N MQWS (1999) (0)
InGaN/GaN field emitters with a piezoelectrically-lowered surface barrier (1998) (0)
Pulsed operation of (Al,Ga,In)N blue laser diodes (1998) (0)
MOCVD Growth and Properties of Thin Al,Ga,-,N Layers on GaN (1999) (0)
Ultrafast electron dynamics and intervalley scattering in GaN (1998) (0)
Blue InGaN MQW laser diodes on sapphire (1998) (0)
Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation (2006) (0)
Nondegenerate Optical Pump-Probe Spectroscopy of Highly Excited Group III Nitrides (1999) (0)
Optical characterization of InGaN/GaN quantum well structures with Si-doped barriers (1999) (0)
High speed devices (2011) (0)
Comparative Study of Emission from Highly Excited (In, Al) GaN Thin Films and Heterostructures (1999) (0)
MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors (1999) (0)

This paper list is powered by the following services:

What Schools Are Affiliated With Sarah L. Keller?

Sarah L. Keller is affiliated with the following schools:

University of California, Santa Barbara