Satoshi Hiyamizu
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Japanese electrical engineer
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Satoshi Hiyamizuengineering Degrees
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Electrical Engineering
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Engineering
Satoshi Hiyamizu's Degrees
- Bachelors Electrical Engineering Institute of Science Tokyo
- Masters Electrical Engineering Kyoto University
- PhD Electrical Engineering University of Tokyo
Why Is Satoshi Hiyamizu Influential?
(Suggest an Edit or Addition)According to Wikipedia, was a Japanese professor of electrical engineering. Dr. Hiyamizu won the 1982 Japanese Journal of Applied Physics Paper Award as lead author of a paper on mobility in two-dimensional electron gases while at Fujitsu Laboratories Limited, received the 1990 IEEE Morris N. Liebmann Memorial Award with Takashi Mimura "for outstanding contributions to the epitaxial growth of compound semiconductor materials and devices," and in 2001 was named an IEEE Fellow "for contributions to the realization of the first high electron mobility transistor ". He served as dean of the Osaka University Graduate School of Engineering from 2000 to 2002. He died in February 2019 at the age of 75.
Satoshi Hiyamizu's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions (1980) (705)
- Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz (2002) (263)
- A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET) (1985) (239)
- Breakdown of the quantum Hall effect due to electron heating (1985) (145)
- Improved Electron Mobility Higher than 106 cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE (1983) (132)
- High Electron Mobility Transistor Logic (1981) (112)
- 547-GHz f/sub t/ In/sub 0.7/Ga/sub 0.3/As-In/sub 0.52/Al/sub 0.48/As HEMTs with reduced source and drain resistance (2004) (104)
- A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature (1987) (90)
- Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency (2001) (86)
- Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency (2001) (79)
- Effect of Silicon Doping Profile on I–V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE (1986) (75)
- Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance (2004) (73)
- Conduction Band Edge Discontinuity of In0.52Ga0.48As/In0.52(Ga1-xAlx)0.48As(0≦x≦1) Heterostructures (1986) (73)
- Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy (1993) (67)
- Electrical Properties of Si-Doped AlxGa1-xAs Layers Grown by MBE (1982) (64)
- High mobility of two‐dimensional electrons at the GaAs/n‐AlGaAs heterojunction interface (1980) (64)
- High-Density GaAs/AlAs Quantum Wires Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy (1996) (57)
- Heavily Si-doped InGaAs lattice-matched to InP grown by MBE (1986) (57)
- Enhancement-Mode High Electron Mobility Transistors for Logic Applications (1981) (57)
- Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency (2002) (52)
- InP-Based High Electron Mobility Transistors with a Very Short Gate-Channel Distance (2003) (52)
- Growth of Ge-rich SixGe1−x single crystal with uniform composition (x=0.02) on a compositionally graded crystal for use as GaAs solar cells (1999) (51)
- Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE (1986) (50)
- Self-organized GaAs quantum-wire lasers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy (1999) (47)
- Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411)A GaAs substrates by molecular beam epitaxy (1994) (45)
- Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy (1985) (45)
- Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions (1984) (45)
- MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method (1986) (42)
- Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE (1984) (42)
- Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures (1981) (38)
- Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE (1981) (38)
- Fabrication of sub‐50‐nm‐gate i‐AlGaN/GaN HEMTs on sapphire (2003) (38)
- MBE growth of extremely high‐quality GaAs–AlGaAs GRIN‐SCH lasers with a superlattice buffer layer (1985) (36)
- The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE (1981) (36)
- Highly uniform and high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy (1997) (35)
- High mobility electrons in selectively doped GaAs/n-AlGaAs heterostructures grown by MBE and their application to high-speed devices (1982) (34)
- AlGaAs/GaAs microcleaved facet (MCF) laser monolithically integrated with photodiode (1982) (34)
- MBE growth of InGaAs-InGaAlAs heterostructures for applications to high-speed devices (1987) (32)
- Pseudomorphic In Al As/In Ga As HEMTs With an Ultrahigh of 562 GHz (2002) (32)
- Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy (1997) (31)
- Very low threshold current GaAs--AlGaAs GRIN-SCH lasers grown by MBE for OEIC applications (1984) (29)
- Lateral p-n junctions on GaAs(111)A substrates patterned with equilateral triangles (1992) (28)
- Current‐voltage characteristics of In0.53Ga0.47As/In0.52Al0.48As resonant tunneling barrier structures grown by molecular beam epitaxy (1988) (28)
- High fT 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates (2000) (28)
- Extremely High 2DEG Concentration in Selectively Doped In0.53Ga0.47As/N-In0.52Al0.48As Heterostructures Grown by MBE (1987) (28)
- Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors (2002) (28)
- Monolithic integration of a photodiode and a field‐effect transistor on a GaAs substrate by molecular beam epitaxy (1983) (28)
- Quantum Well Width Dependence of Negative Differential Resistance of In0.52Al0.48As/In0.53Ga0.47As Resonant Tunneling Barriers Grown by MBE (1987) (26)
- Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE (1985) (24)
- Low temperature etching of GaAs substrates and improved morphology of GaAs grown by metalorganic molecular beam epitaxy using trisdimethylaminoarsenic and triethylgallium (1995) (24)
- MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source (1986) (21)
- Effect of H2 on the Quality of Si-Doped AlxGa1-xAs Grown by MBE (1983) (20)
- The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE (1981) (20)
- Parallel Electron Transport and Field Effects of Electron Distributions in Selectively-Doped GaAs/n-AlGaAs (1983) (19)
- Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy (1998) (19)
- High f/sub T/ 50-nm-gate lattice-matched InAlAs/InGaAs HEMTs (2000) (19)
- Cyclotron resonance of two-dimensional electrons in AlxGa1−xAs/GaAs heterojunction (1984) (19)
- Energy-Band Offset of In0.53Ga0.47As–In0.52(Ga1-xAIx)0.48As Heterostructures, Determined by Photoluminescenee Excitation Spectroscopy of Quasi-Parabolie Quantum Wells Grown by MBE (1987) (19)
- Polarization control of vertical cavity surface emitting laser structure by using self-organized quantum wires grown on (775)B-oriented GaAs substrate by molecular beam epitaxy (2004) (18)
- A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE (1985) (18)
- Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlxGa1-xAs Heterostructure on the AlAs Mole Fraction (1983) (18)
- Super-flat interfaces in pseudomorphic In0.72Ga0.28As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy (2000) (17)
- Laser operation at room temperature of self-organized In0.1Ga0.9As/(GaAs)6(AlAs)1 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy (2000) (17)
- InGaAs/InAlGaAs hot-electron transistors with current gain of 15 (1986) (17)
- Far-infrared cyclotron resonance of two-dimensional electrons in an AlxGa1−xAs/GaAs heterojunction (1982) (17)
- Importance of gate-recess structure to the cutoff frequency of ultra-high-speed InGaAs/InAlAs HEMTs (2002) (16)
- Lateral Definition of Monocrystalline GaAs Prepared by Molecular Beam Epitaxy (1980) (16)
- High electron mobility transistors (1986) (16)
- High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators (2006) (15)
- V/III ratio dependence of surface migration length of As4 molecules during molecular beam epitaxy of GaAsP on (411)A GaAs substrates (2003) (15)
- Implantation into an AlGaAs/GaAs Heterostructure (1983) (15)
- The Effects of Tungsten-Halogen Lamp Annealing on a Selectively Doped GaAs/N-AlGaAs Heterostructure Grown by MBE (1984) (15)
- Extremely flat interfaces in GaAs/AlGaAs quantum wells with high Al content (0.7) grown on GaAs(411)A substrates by molecular beam epitaxy (1995) (15)
- Photoreflectance and Photoluminescence Study of (GaAs)m/(AlAs)5 (m=3-11) Superlattices: Direct and Indirect Transition (1989) (14)
- Optimized channel thickness for high electron mobility in pseudomorphic In0.74Ga0.26As/In0.52Al0.48As quantum-well HEMT structures with (411)A super-flat interfaces grown by MBE (2001) (14)
- In0.15Ga0.85As/GaAs quantum wire structures grown on (5 5 3)B GaAs substrates by molecular beam epitaxy (1999) (14)
- (Invited) MBE-Grown GaAs/N–AlGaAs Heterostructures and Their Application to High Electron Mobility Transistors (1982) (14)
- Novel asymmetric gate-recess engineering for sub-millimeter-wave InP-based HEMTs (2001) (13)
- Surface segregation of indium atoms during molecular beam epitaxy of InGaAs/GaAs superlattices on (n 1 1)A GaAs substrates (2007) (13)
- Large Anisotropy of Electron Mobilities in Laterally Modulated Two-Dimensional Systems Grown on the (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy (2001) (13)
- Quantum galvanomagnetic properties of two-dimensional electron gas in AlxGa1−xAs/GaAs heterojunction fet in strong magnetic fields (1982) (13)
- Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures (1985) (13)
- Extremely Flat Interfaces in InxGa1-xAs/Al0.3Ga0.7As Quantum Wells Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy. (1997) (13)
- Improved GaAs/AlAs multilayer structures grown by MBE on patterned GaAs (100) substrates with ridges along the (001) direction (1993) (13)
- Nanogate InP-HEMT technology for ultrahigh-speed performance (2004) (12)
- Much improved interfaces in GaAs/AlAs quantum wells grown on (411)A GaAs substrates by molecular‐beam epitaxy (1995) (12)
- Metalorganic gas control system for gas source molecular beam epitaxy (1990) (12)
- Magnetotransport in ultrashort period unidirectional lateral superlattices (2002) (12)
- GaAs/(GaAs) 4 (AlAs) 2 quantum wire lasers grown on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy (1999) (12)
- LATERAL VARIATION OF INDIUM CONTENT IN INGAAS GROWN ON GAAS CHANNELED SUBSTRATES BY MOLECULAR BEAM EPITAXY (1994) (11)
- Optical properties of GaAs/Al0.3Ga0.7As T-shaped quantum well structure fabricated by glancing angle molecular beam epitaxy on GaAs (100) patterned substrates (1994) (11)
- (Invited) Analyses of 2D Electron Transport at a GaAs/AlGaAs Interface (1983) (11)
- Highly uniform and high optical quality In0.22Ga0.78As/GaAs quantum wires grown on (221)A GaAs substrate by molecular beam epitaxy (2001) (11)
- Characterization of interface roughness scattering of electrons in an In0.53Ga0.47As/In0.52Al0.48As QW-HEMT structure with (411)A super-flat interfaces (2003) (10)
- Electrical properties of Si-doped GaAs layers grown on (411)A GaAs substrates by molecular beam epitaxy (1996) (10)
- GaAs/GaAs0.8P0.2 quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy (1999) (10)
- Characterization of GaAs/AlAs interfacial atomic step structures on a (411)A-oriented substrate by transmission electron microscope (1995) (10)
- Ultra-High-Speed Low-Noise InP-HEMT Technology (2006) (10)
- High transconductance of 2.25 S/mm observed at 16 K for 195-nm-gate In/sub 0.75/Ga/sub 0.25/As/In/sub 0.52/Al/sub 0.48/As HEMT fabricated on [411]A-oriented InP substrate (2005) (10)
- Velocity Enhancement in Cryogenically Cooled InP-Based HEMTs on (411)A-Oriented Substrates (2006) (10)
- Super-Flat Interfaces in Pseudomorphic InxGa1-xAs/Al0.28Ga0.72As Quantum Wells with High In Content (x = 0.15) Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy (1998) (9)
- Galvanomagnetic Study of 2-Dimensional Electron Gas in AlxGa1-xAs/GaAs Heterojunction FET (1981) (9)
- Mobility enhancement by reduced remote impurity scattering in a pseudomorphic In0.7Ga0.3As/In0.52Al0.48As quantum well high electron mobility transistor structure with (411)A super-flat interfaces grown by molecular-beam epitaxy (2001) (9)
- Cyclotron resonance in double-layer two-dimensional electron system in tilted magnetic fields (1999) (9)
- Surface migration of group V atoms in GaAsP grown on GaAs channeled substrates by molecular beam epitaxy (2000) (9)
- Magnetophonon resonance of a two-dimensional electron gas in a quantum well (1988) (8)
- Resonant excitation and anti-Stokes luminescence of GaAs single quantum dots (2001) (8)
- High-density {GaAs}/{( GaAs) 2 ( AlAs) 2 } quantum wires naturally formed on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy (1997) (8)
- Thermal stability of Ti/Pt/Au ohmic contacts for cryogenically cooled InP-based HEMTs on (4 1 1)A-oriented substrates by MBE (2007) (8)
- InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method (1986) (7)
- HOT ELECTRON EFFECTS IN A 2D ELECTRON GAS AT THE GaAs/AlGaAs INTERFACE (1981) (7)
- Ultra-short T-shaped gate fabrication technique for InP based HEMTs with high ft (> 300 GHz) and their MMIC applications (2000) (7)
- As4 pressure dependence of the interface flatness of quantum wells grown on (411) A GaAs substrates by MBE (1997) (7)
- MBE growth of GaAs/AlAs QW structures on GaAs channeled substrates with submicron facets (1992) (7)
- IIA-8 device characteristics of short channel high electron mobility transistor (HEMT) (1983) (7)
- As4 pressure dependence of surface segregation of indium atoms during molecular beam epitaxy of In0.08Ga0.92As/GaAs superlattices on (411)A GaAs substrates (2000) (7)
- Extremely high electron mobility of pseudomorphic In0.74Ga0.26As∕In0.46Al0.54As modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy (2004) (7)
- Far-infrared magneto-absorption of double-layer two-dimensional electron system in tilted magnetic fields (2000) (7)
- GaAsAl0.3Ga0.7As resonant tunneling diodes with atomically flat interfaces grown on (411)A GaAs substrates by MBE (1996) (7)
- Preferential migration of indium atoms on the (411)A plane in InGaAs grown on GaAs channeled substrates by molecular beam epitaxy (1995) (7)
- InxGa1−xAs/GaAs quantum wire structures grown on GaAs (100) patterned substrates with [001] ridges (1995) (6)
- 120-nm-T-shaped-Mo∕Pt∕Au-gate AlGaN∕GaN high electron mobility transistors (2005) (6)
- Magnetoconductance Investigations of AlxGa1-xAs/GaAs Heterojunction FET in Strong Magnetic Fields (1981) (6)
- In-plane magnetic field dependence of cyclotron resonance in two-dimensional electron system (2002) (6)
- Confined multiexciton states of GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface (2001) (6)
- High-temperature growth of epitaxial NiAl thin films on AlAs by molecular-beam epitaxy (1991) (6)
- Room temperature lasing of quantum wire VCSELs by optical pumping grown on the (7 7 5) B GaAs substrates by MBE (2002) (6)
- DC and RF Performance of 50 nm Gate Pseudomorphic In0.7Ga0.3As/In0.52Al0.48As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy (2000) (6)
- Monolithic 1×4 Array of Uniform Radiance AlGaAs–GaAs LED's Grown by Molecular Beam Epitaxy (1982) (6)
- Sharp Transmission Coefficient in GaAs/AlAs Resonant Tunneling Diodes with (411)A Superflat Interfaces Grown by Molecular Beam Epitaxy (1999) (6)
- In 0.53 Ga 0.47 AS/In 0.52 Al 0.48 As quantum wire structures grown on (775)B-oriented InP substrates by molecular beam epitaxy (1999) (6)
- WA-B5 high-electron mobility transistors with selectively doped GaAs/n-AlGaAs heterojunctions (1980) (6)
- Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate (2001) (6)
- InP HEMTs: physics, applications, and future (2003) (5)
- Transport Characteristics in Heterostructure Devices (1986) (5)
- Interface roughness characterization by electron mobility of pseudomorphic In0.74Ga0.26As∕In0.52Al0.48As modulation-doped quantum wells grown on (411)A InP substrates by molecular beam epitaxy (2005) (5)
- Wire-like island growth of epitaxial NiAl on AlAs by molecular beam epitaxy (1992) (5)
- Improved cathodoluminescence properties of GaAs/Al0.3Ga0.7As tilted T‐shaped quantum wires fabricated on (111)B facet by glancing‐angle molecular beam epitaxy (1996) (5)
- High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs (2001) (5)
- Hot electron distribution and transport in AlGaAs/GaAs/AlGaAs quantum wells (1988) (5)
- Effects of Heterointerface Flatness on Device Performance of InP-Based High Electron Mobility Transistor (2007) (5)
- Simple and high-precision asymmetric gate-recess process for ultrafast InP-based high electron mobility transistors (2002) (5)
- Selectively doped GaAs/N–AlGaAs heterostructures grown by molecular beam epitaxy for high electron mobility transistor IC applications (1985) (5)
- Electronic properties of Si atomic-planar-doped GaAs/AlAs quantum well structures grown by MBE (1986) (5)
- Selective area growth of GaAs using a Ga beam with a step-function lateral intensity profile (1995) (5)
- High-density In 0.14 Ga 0.86 As/(GaAs) 5 (AlAs) 5 quantum wires naturally formed on (775)B-oriented GaAs substrates by molecular beam epitaxy (1998) (5)
- Room temperature lasing of GaAs quantum wire vertical-cavity surface-emitting lasers grown on (2006) (5)
- Metalorganic molecular beam epitaxy of GaSb on patterned GaSb substrates using triethylgallium and Sb4 (1995) (5)
- Photoluminescence study on twenty GaAs/Al0.3Ga0.7As tilted T-shaped quantum wires fabricated by glancing-angle molecular beam epitaxy (1998) (4)
- GaAs/AlAs super-flat interfaces in GaAs/AlAs and GaAs/(GaAs)2 (AlAs)2 quantum wells grown on (4 1 1)A GaAs substrates by MBE (1998) (4)
- AlGaAs/GaAs Monolithic LED/Amplifier Circuit Fabricated by Molecular Beam Epitaxy (1983) (4)
- Reply to the Comment by H. L. Störmer (1981) (4)
- Properties of Heteroepitaxial InxGa1-xAs by Molecular Beam Epitaxy (1977) (4)
- Stacking effect of self-organized In0.15Ga0.85As quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy (2001) (4)
- 550 GHz-f/sub T/ pseudomorphic InP-HEMTs with reduced source-drain resistance (2003) (4)
- Larger critical thickness determined by photoluminescence measurements in pseudomorphic In0.25Ga0.75As/Al0.32Ga0.68As quantum well grown on (411)A GaAs substrates by molecular beam epitaxy (1999) (4)
- Extremely High 2DEG Concentration in Selectively Doped In_ Ga_ As/N-In_ Al_ As Heterostructures Grown by MBE (1987) (4)
- High characteristic temperature (T0=243 K) of stacked InGaAs quantum wire lasers grown on (775)B GaAs substrates by molecular beam epitaxy (2002) (4)
- MBE growth of GaAs/AlAs double-barrier structures on GaAs channeled substrates (1991) (4)
- Chapter 2 Characteristics of Two-Dimensional Electron Gas in III-V Compound Heterostructures Grown by MBE (1990) (4)
- Pseudomorphic InGaAs/AlAs quantum wells grown on GaAs channeled substrates by MBE☆ (1992) (4)
- High performance ridge-waveguide AlGaAs/GaAs multiquantum-well lasers grown by molecular beam epitaxy (1982) (4)
- Temperature dependence of exciton lifetimes in high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy (1998) (4)
- InP-based HEMTs with a cutoff frequency higher than 450 GHz (2002) (4)
- Conduction Band Edge Discontinuity of In_ Ga_ As/In_ (Ga_1 _xAl_x)_ As(0≦x≦1) Heterostructures (1986) (4)
- Effect of Bottom SiN Thickness for AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Using SiN/SiO2/SiN Triple-Layer Insulators (2006) (4)
- Selectively Doped GaAs/N-Al0.3Ga0.7As Heterostructures Grown by Gas-Source MBE (1988) (4)
- GaAs/AlAs resonant tunneling diodes with super-flat interfaces grown on (4 1 1)A GaAs substrates by MBE (1997) (4)
- Transmission electron microscopy observation of GaAs/Al0.3Ga0.7As T-shaped quantum well structure fabricated by glancing angle molecular beam epitaxy on GaAs(100) reverse-mesa etched substrates (1995) (3)
- 830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy (2007) (3)
- Metalorganic molecular beam epitaxy growth of GaAs on patterned GaAs substrates (1994) (3)
- Back-Gated Field Effect in a Double Two-Dimensional Electron Gas Structure (1986) (3)
- Micro-Pump–Probe Spectroscopy of an Exciton in a Single Semiconductor Quantum Dot Using a Heterodyne Technique (2011) (3)
- Monte Carlo Simulations of Electron Transport in In0.52Al0.48As/In0.75Ga0.25As High Electron Mobility Transistors at 300 and 16 K (2010) (3)
- Temperature dependence of photoluminescence from high-density GaAs/(GaAs)4(AlAs)2 quantum wires grown on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy (1998) (3)
- Characterization of double heterojunction GaAs/AlGaAs hot electron transistors (1984) (3)
- Improved optical qualities of tilted T-shaped quantum wires fabricated by glancing-angle molecular beam epitaxy (1997) (3)
- GaAs/Al0.4Ga0.6As triple barrier resonant tunneling diodes with (4 1 1)A super-flat interfaces grown by MBE (1999) (3)
- Strained InGaAs/AlGaAs tilted T-shaped quantum wires fabricated by glancing-angle molecular beam epitaxy (1999) (3)
- HEMTs with ultrahigh cutoff frequency (2003) (3)
- Structure Analysis of GaAs–AlAs Superlattice Grown by Molecular Beam Epitaxy (1987) (3)
- Suppression of surface segregation of silicon dopants during molecular beam epitaxy of (411)A In0.75Ga0.25As∕In0.52Al0.48As pseudomorphic high electron mobility transistor structures (2006) (3)
- High-quality InAlAs layers grown on (411)A-oriented InP substrates by molecular beam epitaxy (1999) (2)
- Room temperature oscillation of self-organized In0.2Ga0.8As/GaAs quantum wire lasers grown on (221)A GaAs substrates by molecular beam epitaxy (2002) (2)
- Effect of thermal annealing on 120‐nm-T-shaped-Ti∕Pt∕Au-gate AlGaN∕GaN high electron mobility transistors (2005) (2)
- High-Quality InGaAs Layers Grown on (411)A-Oriented InP Substrates by Molecular Beam Epitaxy (1999) (2)
- Pulse oscillation of self-organized In0.53Ga0.47As quantum wire lasers grown on (775)B InP substrates by molecular beam epitaxy (2005) (2)
- Hole mobility enhancement in GaAs/p-Al0.3Ga0.7As QW-HEMT structures with (4 1 1)A super-flat interfaces grown by MBE (1998) (2)
- InP-Based HEMTs with a Very Short Gate-Channel Distance (2002) (2)
- Highest cryogenic transconductance of 2.2 S/mm for 400-nm-gate InGaAs/InAlAs PHEMT fabricated on [411]A-oriented InP substrate (2005) (2)
- Improved interface abruptness in pseudomorphic InGaAs/AlGaAs quantum wells with (411)A superflat interfaces grown by molecular beam epitaxy (2001) (2)
- Non-Recessed-Gate Enhancement-Mode AlGaN/GaN HEMTs with High RF Performance (2003) (2)
- Summary Abstract: Electrical properties of MBE‐grown GaAs/N–AlGaAs heterostructures and application to high speed devices (1983) (2)
- Electron mobility in selectively Si-doped GaAs/N-Al 0.3 Ga 0.7 As quantum well heterostructures with super-flat interfaces grown on (411)A GaAs substrates by molecular beam epitaxy (1998) (2)
- Micro-photoluminescence of single GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface (2000) (2)
- Much improved flat interfaces of InGaAs/AlAsSb quantum well structures grown on (411)A InP substrates by molecular-beam epitaxy (2005) (2)
- Improved uniformity of self-organized In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (7 7 5)B-oriented InP substrate by molecular beam epitaxy (2003) (2)
- 2D hot electron transport in a modulation-doped GaAs/AlGaAs interface (1983) (2)
- Photoreflectance characterization of GaAs/AlAs quantum wells with super-flat interfaces grown by molecular beam epitaxy (2004) (1)
- Single-particle relaxation times in a pseudomorphic In0.7Ga0.3 As/In0.52Al0.48As QW-HEMT structure with A super-flat interfaces grown by MBE (2002) (1)
- Direst fabrication of submicron pattern on GaAs by finely focused ion beam system (1986) (1)
- Resonant Tunneling Barrier Structures and Their Applications to the Resonant Tunneling Hot Electron Transistor (1988) (1)
- MBE-Grown GaAs/N-AlGaAs Heterostructures and Their Application to High Electron Mobility Transistors (1981) (1)
- Anomalous cyclotron resonance of 2D electrons in Al x Ga 1-x As/GaAs heterojunctions (1983) (1)
- Extremely High-Quality GaAs-AlGaAs GRIN-SCH Lasers with a Superlattice Buffer Layer Grown by MBE for OEIC Applications (1984) (1)
- 1.3 μm range effectively cylindrical In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (2 2 1)A InP substrates by molecular beam epitaxy (2006) (1)
- Resonant Stokes and anti-Stokes luminescence of GaAs/AlGaAs quantum dots on a (411)A GaAs surface (2001) (1)
- Effects of heterointerface flatness on device performance of InP-based HEMT -- Reduction of interface roughness scattering using (411)A-oriented substrate (2006) (1)
- In0.05Ga0.95As/Al0.3Ga0.7As quantum wells grown on a (411)A-oriented In0.06Ga0.94As ternary substrate by molecular beam epitaxy (2000) (1)
- Suppression of exchange enhancement of spin gap in quantum Hall systems by ultra-short period lateral superlattice (2002) (1)
- Much improved self-organized In0.53Ga0.47As quantum wire lasers grown on (775)B InP substrates by molecular beam epitaxy (2006) (1)
- Cathodoluminescence properties of GaAs/AlGaAs pyramidal cap structures with high spatial resolution (2006) (1)
- Influence of in-plane magnetic field on cyclotron resonance in double-layer two dimensional electron system (2001) (1)
- Super-flat (411)A interfaces and uniformly corrugated (775)B interfaces in GaAs/AlGaAs and InGaAs/InAlAs heterostructures grown by molecular beam epitaxy (1999) (1)
- In0.18Ga0.82As/GaAs1−yPy quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy (2000) (1)
- HEMTs with ultrahigh cutoff frequency (2003) (1)
- Dissociation of As4 molecules during molecular beam epitaxy of GaAsP on (n11)A and (n11)B GaAs substrates (2002) (1)
- MULTIEXCITON DYNAMICS OF GaAs SINGLE QUANTUM DOTS (2001) (0)
- Extremely Flat Interfaces in InxGa1-xAs/Al0.3Ga0.7As Quantum Wells Grown on (411)A GaAs Substrates by MBE (1996) (0)
- MAGNETIZATION PROCESSES IN HELICAL MnP (1971) (0)
- Implantation into an Al1-xGaxAs/GaAs heterostructure (1982) (0)
- Extremely High Peak-to-Valley Current Ratio Obtained in an InAlAs/InGaAs Resonant Tunneling Barrier Structure Grown by MBE (1986) (0)
- High electron mobility heterojunction semiconductor device (1981) (0)
- Negative Differential Resistance Characteristics of an In0.53 Ga0.47 As/In1-x Alx As Pseudomorphic Resonant Tunneling Barrier Grown by MBE (1987) (0)
- Arsenic pressure dependence of surface migration length of As/sub 4/ molecules during molecular beam epitaxy of GaAsP on [411]A GaAs substrate (2002) (0)
- パルス分子線法で成長させたIn0.53Ga0.47As‐In0.52(Ga1-xAlx)0.48As準放物面状(多階段)量子井戸 (1988) (0)
- QUANTUM TRANSPORT IN TWO-DIMENSIONAL ELECTRON GAS IN ULTRA-SHORT PERIOD LATERAL SUPERLATTICES (2002) (0)
- Extremely flat growth-interrupted InAlAs surface grown on a -oriented InP substrate by molecular beam epitaxy (2002) (0)
- Enhancement of electron mobilities in pseudomorphic In 0.7- Ga 0.3 As/In 0.52 Al 0.48 Asmodulation-doped quantum wells with (411)A super-flat interfaces grown by molecular beam ep itaxy (1999) (0)
- Semiconductor Material Physics (2012) (0)
- Lattice-matched InxGa1-xAs/InxAl1-xAs quantum wells (x = 0.18 and 0.19) grown on (411)A- and (100)-oriented InGaAs ternary substrates by molecular beam epitaxy (2001) (0)
- Cyclotron resonance of ultrashort-period lateral superlattices (2003) (0)
- Excellent negative differential resistance of InGaAs/InAlAs resonant tunneling barrier structures and applications to a new functional device, RHET (1987) (0)
- Resonant micro-photoluminescence and excitation spectra of GaAs/AlGaAs single quantum dots on a (411)A GaAs surface (2001) (0)
- Photoluminescence characterization of interface abruptness of GaAs/ AlGaAs quantum wells grown on [411]A and [100] GaAs substrates (2002) (0)
- Energy-Band Offset of In_ Ga_ As-In_ (Ga_ AI_x)_ As Heterostructures, Determined by Photoluminescenee Excitation Spectroscopy of Quasi-Parabolie Quantum Wells Grown by MBE (1987) (0)
- Improved uniformity of self-organized In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As quantum wires grown on (775)B-oriented InP substrate by molecular beam epitaxy (2002) (0)
- Effect of flatness of heterointerfaces on device performance of InP-based HEMTs (2006) (0)
- Ultrahigh Performance InP HEMTs (2003) (0)
- Analyses of 2D Electron Transport at a GaAs/AlGaAs Interface : B-5: GaAs IC (1983) (0)
- 1.5 μm Range Self-Organized In 0.65 Ga 0.35 As/In 0.52 Al 0.48 As Quantum Wire Structures Grown on (775)B-Oriented InP Substrates by Molecular Beam Epitaxy (2002) (0)
- Very low threshold GaAs-AlGaAs GRIN-SCH lasers grown by MBE for OEIC applications (1985) (0)
- An inquiry into a project management body of knowledge in the Japanese construction industry and roles of a Japanese PMBoK for Japanese managers (2013) (0)
- Extremely uniform In0.08Ga0.92As/GaAs superlattice grown on a (411)A GaAs substrate by molecular beam epitaxy (1998) (0)
- Interface roughness scattering of electrons in a (411)A Ino.53G~.~~As/In ~.~zAl~.~~As HEMT structure with super-flat interfaces (2002) (0)
- Fabrication Technology for Ultrahigh-Speed Decananometer-Gate InP-Based HEMTs (2003) (0)
- Magneto-excitons in (411)A and (100)-oriented GaAs/AlGaAs multiple quantum well structures (1999) (0)
- Extremely Flat Interfaces in In_xGa_ As/Al_ Ga_ As Quantum Wells Grown on (411)A GaAs Substrates by MBE (1996) (0)
- Molecular beam epitaxy 1994 : proceedings of the Eighth International Conference on Molecular Beam Epitaxy, Toyonaka, Osaka, Japan, 29 August -2 September 1994 (1995) (0)
- New interfaces in heterostructures grown on high index planes of substrates by molecular beam epitaxy and their device applications (2003) (0)
- MSS-5 : proceedings of the Fifth International Conference on Modulated Semiconductor Structures, Nara, Japan, 8-12 July, 1991 (1992) (0)
- AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators (2005) (0)
- Temperature Scaling Anomalies in Quantum Hall Plateau Transitions with Ultra‐Short Period Lateral Superlattice (2006) (0)
- Hot Electron Transistors Using InGaAs/InAlGaAs Heterostructure (1986) (0)
- Magneto-Excitons in (411)-Oriented GaAs/AlGaAs Quantum Wells (1998) (0)
- Interface roughness scattering of electrons in a [411]A In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As HEMT structure with super-flat interfaces (2002) (0)
- Far-infraredmagneto-absorptionofdouble-layertwo-dimensional electronsystemintiltedmagneticelds (2000) (0)
- Cyclotron resonance in corrugated lateral superlattices (2004) (0)
- Tilted T-Shaped and (775)B Quantum Wires (1998) (0)
- Pseudomorphic In/sub 0.7/Ga/sub 0.3/As/In/sub 0.52/Al/sub 0.48/As HEMTs with super-flat interfaces fabricated on [411] A-oriented InP substrates (2000) (0)
- Fabrication of ultra-narrow channel InP-HEMTs with high density, uniformity and controllability (2003) (0)
- The Electrical Effect of AlGaAs Barrier at the Heterointerface of Selectively Doped GaAs/n-AlGaAs Heterostructure (1984) (0)
- IIA-3 a double two-dimensional electron gas heterostructure of GaAs-AlGaAs grown by MBE (1986) (0)
- Weak localization and spin-orbit interaction in self-organized In0.2Ga0.8As quantum wires on GaAs (221)A substrates (2005) (0)
- Selectively Doped GaAs/ N-Al_ Ga_ As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices (1988) (0)
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