Şemsetti̇n Altindal

Şemsetti̇n Altindal's AcademicInfluence.com Rankings

Şemsetti̇n Altindal

Physics

#6772

World Rank

#8756

Historical Rank

physics Degrees

Download Badge

Physics

Şemsetti̇n Altindal's Degrees

PhD Physics Middle East Technical University
Masters Physics Middle East Technical University
Bachelors Physics Middle East Technical University

Why Is Şemsetti̇n Altindal Influential?

(Suggest an Edit or Addition)

(See a Problem?)

Şemsetti̇n Altindal's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(1 0 0) Schottky contacts (2003) (242)
The role of interface states and series resistance on the I–V and C–V characteristics in Al/SnO2/p-Si Schottky diodes (2003) (191)
Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure (2005) (172)
Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes (2010) (123)
Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures (2006) (117)
Characterization of current-voltage (I-V) and capacitance-voltage-frequency (C-V-f) features of Al/SiO2/p-Si (MIS) Schottky diodes (2006) (117)
Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I–V–T and C–V–T measurements (2007) (108)
Temperature dependence of characteristic parameters of the Au/SnO2/n-Si (MIS) Schottky diodes (2007) (107)
Frequency and voltage effects on the dielectric properties and electrical conductivity of Al-TiW-Pd2Si/n-Si structures (2008) (105)
The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range (2006) (103)
Current transport in Zn/p-Si(1 0 0) Schottky barrier diodes at high temperatures (2005) (103)
The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I–V characteristics (2009) (95)
The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures (2008) (95)
The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer (2010) (89)
Dislocation-governed current-transport mechanism in (Ni/Au)-AlGaN/AlN/GaN heterostructures (2009) (88)
The origin of anomalous peak and negative capacitance in the forward bias capacitance-voltage characteristics of Au/PVA/n-Si structures (2011) (88)
Analysis of I-V characteristics on Au/n-type GaAs schottky structures in wide temperature range (2005) (84)
Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs(1 1 0) schottky barrier diodes (2015) (83)
The effect of interface states, excess capacitance and series resistance in the Al/SiO2/p-Si schottky diodes (2005) (78)
Density of interface states, excess capacitance and series resistance in the metal–insulator–semiconductor (MIS) solar cells (2005) (77)
On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures (2008) (77)
Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures (2009) (76)
On the intersecting behaviour of experimental forward bias current–voltage (I–V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures (2006) (76)
On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs) (2014) (75)
The behavior of the I‐V‐T characteristics of inhomogeneous (Ni∕Au)–Al0.3Ga0.7N∕AlN∕GaN heterostructures at high temperatures (2007) (75)
Analysis of electrical characteristics of Au/SiO2/n-Si (MOS) capacitors using the high-low frequency capacitance and conductance methods (2008) (74)
Effect of series resistance and interface states on the I–V, C–V and G/ω–V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature (2012) (74)
Temperature dependent current-transport mechanism in Au/(Zn-doped)PVA/n-GaAs Schottky barrier diodes (SBDs) (2013) (74)
Two diodes model and illumination effect on the forward and reverse bias I–V and C–V characteristics of Au/PVA (Bi-doped)/n-Si photodiode at room temperature (2013) (72)
Influence of frequency and bias voltage on dielectric properties and electrical conductivity of Al/TiO2/p-Si/p+ (MOS) structures (2008) (71)
Gaussian distribution of inhomogeneous barrier height in Al/SiO2/p-Si Schottky diodes (2008) (71)
On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes (2006) (71)
Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures (2010) (70)
The effect of series resistance and interface states on the frequency dependent C–V and G/w–V characteristics of Al/perylene/p-Si MPS type Schottky barrier diodes (2013) (69)
Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions (2016) (69)
On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics (2017) (68)
The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer (2006) (68)
A detailed study on current–voltage characteristics of Au/n-GaAs in wide temperature range (2013) (68)
The distribution of barrier heights in MIS type Schottky diodes from current–voltage–temperature (I–V–T) measurements (2009) (68)
Investigation of Electrical Characteristics in Al/CdS-PVA/p-Si (MPS) Structures Using Impedance Spectroscopy Method (2016) (67)
On the profile of frequency dependent series resistance and dielectric constant in MIS structure (2007) (67)
The source of negative capacitance and anomalous peak in the forward bias capacitance-voltage in Cr/p-si Schottky barrier diodes (SBDs) (2015) (67)
Charge transport mechanisms and density of interface traps in MnZnO/p-Si diodes (2014) (65)
On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/p-Si (MIS) Schottky diodes (2008) (64)
Current conduction mechanism in Al/p-Si Schottky barrier diodes with native insulator layer at low temperatures (2007) (64)
Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes (2014) (63)
Electrical and photocurrent characteristics of Au/PVA (Co-doped)/n-Si photoconductive diodes (2012) (61)
The influence of series resistance and interface states on intersecting behavior of I–V characteristics of Al/TiO2/p-Si (MIS) structures at low temperatures (2008) (60)
Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures (2013) (59)
Analysis of interface states and series resistance of MIS Schottky diodes using the current-voltage (I-V) characteristics (2008) (59)
Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer (2011) (57)
Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range (2016) (56)
Effects of 60Co γ-ray irradiation on the electrical characteristics of Au/n-GaAs (MS) structures (2005) (56)
Anomalous Peak in the Forward-Bias C–V Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) Structures (2011) (55)
The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs) (2012) (55)
Frequency and voltage dependence of dielectric properties and electric modulus in Au/PVC + TCNQ/p-Si structure at room temperature (2014) (54)
Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C–V and G/ω–V characteristics (2012) (53)
Current–voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range (2010) (52)
Analysis of surface states and series resistance in Au/n-Si Schottky diodes with insulator layer using current-voltage and admittance-voltage characteristics (2009) (51)
Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures (2017) (51)
Frequency and voltage dependence dielectric properties, ac electrical conductivity and electric modulus profiles in Al/Co 3 O 4 -PVA/p-Si structures (2016) (50)
A detailed study of current-voltage characteristics in Au/SiO2/n-GaAs in wide temperature range (2009) (50)
Frequency and gate voltage effects on the dielectric properties of Au/SiO2/n-Si structures (2008) (50)
Dielectric properties and ac electrical conductivity studies of MIS type Schottky diodes at high temperatures (2008) (49)
The C–V–f and G/ω–V–f characteristics of Al/SiO2/p-Si (MIS) structures (2006) (49)
The interface states and series resistance effects on the forward and reverse bias I–V, C–V and G/ω-V characteristics of Al–TiW–Pd2Si/n-Si Schottky barrier diodes (2010) (48)
Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities (2016) (48)
A compare of electrical characteristics in Al/p-Si (MS) and Al/C20H12/p-Si (MPS) type diodes using current–voltage (I–V) and capacitance–voltage (C–V) measurements (2015) (48)
Synthesis, electrical and photo-sensing characteristics of the Al/(PCBM/NiO: ZnO)/p-Si nanocomposite structures (2021) (48)
Forward and reverse bias current–voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer (2011) (46)
On the mechanism of current-transport in Cu/CdS/SnO2/In–Ga structures (2011) (46)
Analysis of the forward and reverse bias I-V characteristics on Au/PVA:Zn/n-Si Schottky barrier diodes in the wide temperature range (2011) (46)
The barrier height distribution in identically prepared Al/p-Si Schottky diodes with the native interfacial insulator layer (SiO2) (2007) (45)
Dielectric properties, electrical modulus and current transport mechanisms of Au/ZnO/n-Si structures (2018) (45)
Frequency and voltage dependence of negative capacitance in Au/SiO2/n-GaAs structures (2012) (44)
The investigation of current-conduction mechanisms (CCMs) in Au/ (0.07Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using (I-V-T) measurements (2018) (43)
Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage (2020) (43)
Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) (2019) (43)
Temperature and voltage dependent current-transport mechanisms in GaAs/AlGaAs single-quantum-well lasers (2010) (43)
Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures (2011) (42)
The Au/polyvinyl alcohol (Co, Zn-doped)/n-type silicon Schottky barrier devices (2011) (42)
A comparative study on the electrical characteristics of Au/n-Si structures with anatase and rutile phase TiO2 interfacial insulator layer (2010) (42)
Investigation of frequency and voltage dependence surface states and series resistance profiles using admittance measurements in Al/p-Si with Co 3 O 4 -PVA interlayer structures (2017) (42)
On the anomalous peak and negative capacitance in the capacitance–voltage (C–V) plots of Al/(%7 Zn-PVA)/p-Si (MPS) structure (2018) (41)
Effectuality of Barrier Height Inhomogeneity on the Current–Voltage–Temperature Characteristics of Metal Semiconductor Structures with CdZnO Interlayer (2018) (41)
Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature (2014) (41)
Comparison of electrical properties of MS and MPS type diode in respect of (In2O3-PVP) interlayer (2020) (40)
On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO2–PVA/n-Si Schottky barrier diodes (2017) (40)
Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode (2017) (40)
The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature (2016) (39)
Au/SnO2/n-Si (MOS) structures response to radiation and frequency (2003) (39)
Electrical characterization of current conduction in Au/TiO2/n-Si at wide temperature range (2009) (38)
A detailed comparative study on the main electrical parameters of Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes (2013) (38)
Formation of ZnO nanopowders by the simple ultrasound-assisted method: Exploring the dielectric and electric properties of the Au/(ZnO-PVA)/n-Si structure (2018) (38)
A comparative study on the electrical and dielectric properties of Al/Cd-doped ZnO/p-Si structures (2019) (38)
Electrical and photovoltaic properties of Au/(Ni, Zn)-doped PVA/n-Si structures in dark and under 250 W illumination level (2014) (37)
Characterization of interface states at Au/SnO2/n-Si (MOS) structures (2008) (37)
Determining electrical and dielectric parameters of dependence as function of frequencies in Al/ZnS-PVA/p-Si (MPS) structures (2016) (37)
Temperature dependent electrical characteristics of AlSiOxpSi solar cells (1994) (37)
The illumination intensity and applied bias voltage on dielectric properties of au/polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes (2011) (36)
Temperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol(Co,Zn)/n-Si Schottky diodes (2010) (36)
Electrical characteristics of Au/n-GaAs Schottky barrier diodes with and without SiO2 insulator layer at room temperature (2009) (36)
Possible current-transport mechanisms in the (Ni/Au)/Al0.22Ga0.78N/AlN/GaN Schottky barrier diodes at the wide temperature range (2010) (36)
The effects of preparation temperature on the main electrical parameters of Al/TiO2/p-Si (MIS) structures by using sol–gel method (2009) (35)
A comparative study on current/capacitance: voltage characteristics of Au/n-Si (MS) structures with and without PVP interlayer (2019) (35)
Electric and Dielectric Properties of Au/ZnS-PVA/n-Si (MPS) Structures in the Frequency Range of 10–200 kHz (2017) (35)
Study on the frequency dependence of electrical and dielectric characteristics of Au/SnO2/n-Si (MIS) structures (2008) (35)
On the temperature dependent dielectric properties, conductivity and resistivity of MIS structures at 1MHz (2012) (35)
Temperature dependence of forward and reverse bias current–voltage characteristics in Al–TiW–PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier (2013) (35)
The C–V–f and G/ω–V–f characteristics of Au/SiO2/n-Si capacitors (2007) (35)
Electrical characteristics of 60Co γ-ray irradiated MIS Schottky diodes (2006) (34)
Schottky diode properties of CuInSe2 films prepared by a two-step growth technique (2012) (34)
The fabrication of Al/p-Si (MS) type photodiode with (%2 ZnO-doped CuO) interfacial layer by sol gel method and their electrical characteristics (2019) (34)
Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes (2015) (34)
Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO2/p-GaAs(110) MIS structures (2015) (33)
The origin of negative capacitance in Au/n-GaAs Schottky barrier diodes (SBDs) prepared by photolithography technique in the wide frequency range (2013) (33)
Frequency-Dependent Admittance Analysis of the Metal–Semiconductor Structure With an Interlayer of Zn-Doped Organic Polymer Nanocomposites (2018) (33)
60Co γ irradiation effects on the current-voltage (I-V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes (2006) (33)
Frequency and voltage dependence of electrical and dielectric properties in metal-interfacial layer-semiconductor (MIS) type structures (2020) (33)
Examination of dielectric response of Au/HgS-PVA/n-Si (MPS) structure by impedance spectroscopy method (2019) (33)
A comparison of electrical parameters of Au/n-Si and Au/(CoSO4–PVP)/n-Si structures (SBDs) to determine the effect of (CoSO4–PVP) organic interlayer at room temperature (2019) (33)
Effect of series resistance on the performance of silicon Schottky diode in the presence of tin oxide layer (2005) (32)
Preparation of mixed copper/PVA nanocomposites as an interface layer for fabrication of Al/Cu-PVA/p-Si Schottky structures (2018) (32)
Frequency dependent dielectric properties and electrical conductivity of platinum silicide/Si contact structures with diffusion barrier (2012) (31)
On the Frequency and Voltage-Dependent Profiles of the Surface States and Series Resistance of Au/ZnO/n-Si Structures in a Wide Range of Frequency and Voltage (2017) (31)
Temperature dependence of barrier heights of Au/n-type GaAs Schottky diodes (2005) (30)
On the temperature dependent forward bias current–voltage (I–V) characteristics in Au/2% graphene–cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure (2015) (30)
Electrical and dielectric properties of Al/(PVP: Zn-TeO2)/p-Si heterojunction structures using current–voltage (I–V) and impedance-frequency (Z–f) measurements (2020) (29)
Electrical characteristics of Au/n-Si (MS) Schottky Diodes (SDs) with and without different rates (graphene + Ca1.9Pr0.1Co4Ox-doped poly(vinyl alcohol)) interfacial layer (2017) (29)
Effects of interface states and series resistance on electrical properties of Al/nanostructure CdO/p-GaAs diode (2012) (29)
Irradiation effects on the C–V and G/ω–V characteristics of Sn/p-Si (MS) structures (2009) (29)
Dielectric, modulus and conductivity studies of Au/PVP/n-Si (MPS) structure in the wide range of frequency and voltage at room temperature (2019) (29)
The effects of (Bi2Te3–Bi2O3-TeO2-PVP) interfacial film on the dielectric and electrical features of Al/p-Si (MS) Schottky barrier diodes (SBDs) (2020) (29)
Temperature dependence of characteristic parameters of the Au/C20H12/n-Si Schottky barrier diodes (SBDs) in the wide temperature range (2017) (28)
Investigation of negative dielectric constant in Au/1 % graphene (GP) doped-Ca1.9Pr0.1Co4Ox/n-Si structures at forward biases using impedance spectroscopy analysis (2015) (28)
Series resistance and interface states effects on the C–V and G/w–V characteristics in Au/(Co3O4-doped PVA)/n-Si structures at room temperature (2017) (28)
A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature (2017) (27)
The effect of Mo-doped PVC+TCNQ interfacial layer on the electrical properties of Au/PVC+TCNQ/p-Si structures at room temperature (2015) (27)
A comparative study on the electrical properties and conduction mechanisms of Au/n-Si Schottky diodes with/without an organic interlayer (2020) (27)
The frequency and voltage dependent electrical characteristics of Al-TiW-Pd2Si/n-Si structure using I-V, C-V and G/ω-V measurements (2008) (26)
Frequency and Temperature Dependence of Dielectric Properties of Au/Polyvinyl Alcohol (Co, Ni-Doped)/n-Si Schottky Diodes (2010) (26)
Illumination effect on electrical characteristics of organic-based Schottky barrier diodes (2010) (26)
Diode-to-diode variation in dielectric parameters of identically prepared metal-ferroelectric-semiconductor structures (2017) (26)
Temperature and voltage dependences of dielectric properties and ac electrical conductivity in Au/PVC+TCNQ/p-Si structures (2014) (26)
On the analysis of the leakage current in Au/Ca3Co4Ga0.001Ox/n-Si structure in the temperature range of 80–340 K (2015) (26)
The effect of gamma irradiation on electrical and dielectric properties of organic-based Schottky barrier diodes (SBDs) at room temperature (2012) (26)
The profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures (2008) (25)
Capacitance/Conductance–Voltage–Frequency Characteristics of ${\rm Au}/{\rm PVC}+{\rm TCNQ}/{\rm p}\hbox{-}{\rm Si}$ Structures in Wide Frequency Range (2014) (25)
Effects of a Thin Ru-Doped PVP Interface Layer on Electrical Behavior of Ag/n-Si Structures (2018) (25)
The study on negative dielectric properties of Al/PVA (Zn-doped)/p-Si (MPS) capacitors (2018) (25)
The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal-polymer-semiconductor structures/diodes studied by temperature-dependent impedance measurements (2020) (25)
Evaluation of Electric and Dielectric Properties of Metal–Semiconductor Structures With 2% GC-Doped-(Ca3Co4Ga0.001Ox) Interlayer (2018) (24)
On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures (2011) (24)
The effect of frequency and temperature on capacitance/conductance–voltage (C/G–V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs) (2014) (24)
Effect of Vanadium Substitution on the Dielectric Properties of Glass Ceramic Bi-2212 Superconductor (2011) (24)
Current–voltage characteristics of Al/Rhodamine-101/n-GaAs and Cu/Rhodamine-101/n-GaAs rectifier contacts (2007) (24)
C-V-f and G/ω-V-f characteristics of Au/(In2O3-PVP)/n-Si (MPS) structure (2020) (24)
The current–voltage and capacitance–voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs (2014) (23)
On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TiO2/p–Si (MIS) structures (2011) (23)
The effect of 60Co (γ-ray) irradiation on the electrical characteristics of Au/SnO2/n-Si (MIS) structures (2008) (23)
Recording the resistance inhomogeneity in high-resistivity semiconductors plates (1995) (23)
The temperature profile and bias dependent series resistance of Au/Bi4Ti3O12/SiO2/n-Si (MFIS) structures (2008) (22)
The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes (2010) (22)
Electrical characterization of novel Si solar cells (2006) (22)
Frequency-Dependent Admittance Analysis of Au/n-Si Structure with CoSO4-PVP Interfacial Layer (2020) (21)
On the temperature dependent profile of interface states and series resistance characteristics in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures (2010) (21)
Frequency dependent C–V and G/ω–V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes (2017) (21)
The distribution of the barrier height in Al–TiW–Pd2Si/n-Si Schottky diodes from I–V–T measurements (2008) (21)
Effect of illumination on electrical parameters of Au/(P3DMTFT)/n-GaAs Schottky barrier diodes (2019) (21)
Energy density distribution profiles of surface states, relaxation time and capture cross-section in Au/n-type 4H-SiC SBDs by using admittance spectroscopy method (2014) (21)
Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes (2013) (20)
Investigation of the efficiencies of the (SnO2-PVA) interlayer in Au/n-Si (MS) SDs on electrical characteristics at room temperature by comparison (2019) (20)
Investigation of the variation of dielectric properties by applying frequency and voltage to Al/(CdS-PVA)/p-Si structures (2021) (20)
The effects of temperature, radiation, and illumination on current–voltage characteristics of Au/PVA(Co, Zn-doped)/n-Si Schottky diodes (2012) (20)
Preparation of (CuS–PVA) interlayer and the investigation their structural, morphological and optical properties and frequency dependent electrical characteristics of Au/(CuS–PVA)/n-Si (MPS) structures (2018) (20)
Investigation of the C-V characteristics that provides linearity in a large reverse bias region and the effects of series resistance, surface states and interlayer in Au/n-Si/Ag diodes (2017) (20)
Gaussian distribution of inhomogeneous barrier height in Al0.24Ga0.76As/GaAs structures (2007) (20)
Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K (2012) (20)
On the temperature dependence of series resistance and interface states in Al/SiO2/p-Si (MIS) Schottky diodes (2008) (20)
Frequency, voltage and illumination interaction with the electrical characteristics of the CdZnO interlayered Schottky structure (2019) (19)
Controlling the electrical characteristics of Al/p-Si structures through Bi4Ti3O12 interfacial layer (2013) (19)
Interfacial layer thickness dependent electrical characteristics of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures at room temperature (2017) (19)
Synthesis of boron and rare earth stabilized graphene doped polyvinylidene fluoride (PVDF) nanocomposite piezoelectric materials (2019) (19)
Current transport properties of (Au/Ni)/HfAlO3/n-Si metal–insulator–semiconductor junction (2021) (19)
A comparative electric and dielectric properties of Al/p-Si structures with undoped and Co-doped interfacial PVA layer (2014) (19)
Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes (2018) (18)
Evaluation of gamma-irradiation effects on the electrical properties of Al/(ZnO-PVA)/p-Si type Schottky diodes using current-voltage measurements (2021) (18)
Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al 2 O 3 =n-GaAs with Thin Al 2 O 3 Interfacial Layer at Room Temperature (2016) (18)
Frequency dependence of the dielectric properties of Au/(NG:PVP)/n-Si structures (2021) (18)
The Structural and Electrical Properties of the Au/n-Si (MS) Diodes With Nanocomposites Interlayer (Ag-Doped ZnO/PVP) by Using the Simple Ultrasound-Assisted Method (2019) (18)
Analysis of electrical characteristics and conduction mechanisms in the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure at room temperature (2017) (18)
The effect of gamma irradiation on electrical characteristics of Au/Polyvinyl Alcohol (Co,Zn-doped)/n-Si Schottky barrier diodes (2010) (18)
Characteristic features of an ionization system with semiconducting cathode (1998) (18)
Illumination intensity effects on the dielectric properties of schottky devices with Co, Ni-doped PVA nanofibers as an interfacial layer (2012) (18)
On the Voltage and Frequency Distribution of Dielectric Properties and ac Electrical Conductivity in Al/SiO2/p-Si (MOS) Capacitors (2013) (18)
A comparison of electrical characteristics of Au/n-Si (MS) structures with PVC and (PVC: Sm2O3) polymer interlayer (2021) (18)
Effects of illumination and 60Co γ-ray irradiation on the electrical characteristics of porous silicon solar cells (2008) (18)
On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60–400 K (2019) (18)
Dielectric and Optical Properties of CdS–Polymer Nanocomposites Prepared by the Successive Ionic Layer Adsorption and Reaction (SILAR) Method (2014) (17)
Analysis of temperature dependent electrical characteristics of Au/n-GaAs/GaAs structures in a wide temperature range (2008) (17)
A Highly Sensitive Temperature Sensor Based on Au/Graphene-PVP/n-Si Type Schottky Diodes and the Possible Conduction Mechanisms in the Wide Range Temperatures (2020) (17)
Electric and dielectric parameters in Au/n-Si (MS) capacitors with metal oxide-polymer interlayer as function of frequency and voltage (2020) (17)
Dielectric properties and electric modulus of Au/PPy/n-Si (MPS) type Schottky barrier diodes (SBDS) as a function of frequency and applied bias voltage (2015) (17)
Electrical and dielectric properties and intersection behavior of G/ω-V plots for Al/Co-PVA/p-Si (MPS) structures at temperatures below room temperature (2014) (17)
On the profile of frequency and voltage dependent interface states and series resistance in MIS structures (2007) (17)
A Compare Study on Electrical Properties of MS Diodes with and Without CoFe2O4-PVP Interlayer (2020) (17)
Effect of inorganic salts on the main parameters of the dilute aqueous poly(vinylpyrrolidone) solutions (1996) (17)
The effect of cadmium impurities in the (PVP–TeO2) interlayer in Al/p-Si (MS) Schottky barrier diodes (SBDs): Exploring its electrophysical parameters (2020) (17)
Electronic transport of Au/(Ca1.9Pr0.1Co4Ox)/n-Si structures analysed over a wide temperature range (2015) (17)
On the frequency dependent negative dielectric constant behavior in Al/Co-doped (PVC+TCNQ)/p-Si structures (2014) (16)
Fabrication, structural and electrical characterization of Au/ (CuSe-polyvinyl alcohol)/n-Si (MPS) Schottky barrier structures (2019) (16)
The role of 60Co γ-ray irradiation on the interface states and series resistance in MIS structures (2010) (16)
Correlation between barrier height and ideality factor in identically prepared diodes of Al/Bi4Ti3O12/p-Si (MFS) structure with barrier inhomogeneity (2017) (16)
On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements (2020) (16)
On the frequency and voltage-dependent main electrical parameters of the Au/ZnO/n-GaAs structures at room temperature by using various methods (2020) (16)
Electrical and dielectric properties of Au/1% graphene (GP)+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structures as function of temperature and voltage (2015) (16)
Comparative Analysis of Temperature-Dependent Electrical and Dielectric Properties of an $\hbox{Al}{-}\hbox{TiW}{-}\hbox{Pd}_{2}\hbox{Si/n-Si}$ Schottky Device at Two Frequencies (2011) (15)
Dielectric properties in Au/SnO2/n-Si (MOS) structures irradiated under 60Co-gamma rays (2004) (15)
The effects of the temperature on I-V and C-V characteristics of Al/P2ClAn(C2H5COOH)/p-Si/Al structure (2009) (15)
The effects of frequency and γ-irradiation on the dielectric properties of MIS type Schottky diodes (2007) (15)
Role of Graphene-Doped Organic/Polymer Nanocomposites on the Electronic Properties of Schottky Junction Structures for Photocell Applications (2018) (15)
On the energy distribution of interface states and their relaxation time profiles in Al/pentacene/p-GaAs heterojunction diode (2012) (15)
On the origin of increase in the barrier height and decrease in ideality factor with increase temperature in Ag/SiO2/p-Si (MIS) Schottky Barrier Diodes (SBDs) (2015) (15)
Comparative study of the temperature-dependent dielectric properties of Au/PPy/n-Si (MPS)-type Schottky barrier diodes (2015) (15)
Analysis of interface states and series resistance at MIS structure irradiated under 60Co γ-rays (2007) (14)
Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes (2020) (14)
Comparison of the electrical and impedance properties of Au/(ZnOMn:PVP)/n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation (2021) (14)
On the negative capacitance behavior in the forward bias of Au/n–4H–SiC (MS) and comparison between MS and Au/TiO2/n–4H–SiC (MIS) type diodes both in dark and under 200 W illumination intensity (2015) (14)
Current-transport mechanisms in gold/polypyrrole/n-silicon Schottky barrier diodes in the temperature range of 110–360 K (2014) (14)
A comparative study on the electrical parameters of Au/n-Si Schottky diodes with and without interfacial (Ca1.9Pr0.1Co4Ox) layer (2016) (14)
Frequency and voltage-dependent electrical parameters, interface traps, and series resistance profile of Au/(NiS:PVP)/n-Si structures (2021) (14)
Frequency and voltage dependent surface states and series resistance of novel Si solar cells (2006) (14)
Investigation of photovoltaic effect on electric and dielectric properties of Au/n-Si Schottky barrier diodes with nickel (Ni)–zinc (Zn) doped organic interface layer (2018) (14)
On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current-voltage (I-V) and admittance spectroscopy methods (2011) (14)
Determination of Surface States Energy Density Distributions and Relaxation Times for a Metal-Polymer-Semiconductor Structure (2019) (14)
Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures (2020) (14)
Illumination and voltage effects on the forward and reverse bias current–voltage (I-V) characteristics in In/In2S3/p-Si photodiodes (2021) (13)
Electrical characterization of Au/n-Si (MS) diode with and without graphene-polyvinylpyrrolidone (Gr-PVP) interface layer (2021) (13)
Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p—Si and Al/Bi4Ti3O12/p—Si structures by using the admittance spectroscopy method (2013) (13)
The effect of metal work function on the barrier height of metal/CdS/SnO2/In–Ga structures (2013) (13)
Temperature dependent conductivity and structural properties of sol–gel prepared holmium doped Bi2O3 nanoceramic powder (2012) (13)
Effects of beta-ray irradiation on the C–V and G/ω–V characteristics of Au/SiO2/n-Si (MOS) structures (2007) (12)
Preparation and dielectric properties of polyvinyl alcohol (Co, Zn Acetate) Fiber/n-Si and polyvinyl alcohol (Ni, Zn Acetate)/n-Si Schottky diodes (2011) (12)
Dielectric characterization of BSA doped-PANI interlayered metal–semiconductor structures (2019) (12)
Investigation of photo-induced effect on electrical properties of Au/PPy/n-Si (MPS) type schottky barrier diodes (2017) (12)
Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs) (2011) (12)
The energy density distribution profile of interface traps and their relaxation times and capture cross sections of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors at room temperature (2017) (12)
Temperature and Voltage Effect on Barrier Height and Ideality Factor in Au/PVC + TCNQ/p‐Si Structures (2014) (12)
The Investigation of Current-Conduction Mechanisms of Te/NaF:CdS/SnO2 Structure in Wide Temperature Range of 80–400 K (2017) (12)
The effect of PVP: BaTiO3 interlayer on the conduction mechanism and electrical properties at MPS structures (2021) (12)
Determination of current transport and trap states density in AlInGaN/GaN heterostructures (2019) (11)
Structural and electrical characterization of rectifying behavior in n-type/intrinsic ZnO-based homojunctions (2012) (11)
Gamma-ray irradiation effects on the interface states of MIS structures (2009) (11)
The Main Electrical and Interfacial Properties of Benzotriazole and Fluorene Based Organic Devices (2013) (11)
Determining electrical and dielectric parameters of Al/ZnS-PVA/p-Si (MPS) structures in wide range of temperature and voltage (2018) (11)
Single Gaussian distribution of barrier height in Al/PS–ZnPc/p-Si type Schottky barrier diode in temperature range of 120–320 K (2014) (11)
Origin of anomalous peak and negative capacitance in the forward bias C-V characteristics of Au/n-InP Schottky Barier Diodes (SBDs) (2009) (11)
Temperature and Interfacial Layer Effects on the Electrical and Dielectric Properties of Al/(CdS-PVA)/p-Si (MPS) Structures (2018) (10)
Graphene doped (Bi2Te3–Bi2O3–TeO2): PVP dielectrics in metal–semiconductor structures (2021) (10)
On the profile of frequency dependent interface states and series resistance in Au/p-InP SBDs prepared with photolithography technique (2012) (10)
A comparative study on dielectric behaviours of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures with different interlayer thicknesses using impedance spectroscopy methods (2018) (10)
Negative dielectric constant and electrical conductivity of Au/n‐Si (111) Schottky barrier diodes with PVA/Ni,Zn interfacial layer (2011) (10)
Intersection behavior of the current–voltage (I–V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity (2020) (10)
A comparison study regarding Al/p-Si and Al/(carbon nanofiber–PVP)/p-Si diodes: current/impedance–voltage (I/Z–V) characteristics (2020) (10)
Dielectric properties, electric modulus and conductivity profiles of Al/Al2O3/p-Si type MOS capacitor in large frequency and bias interval (2021) (10)
Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature (2022) (10)
The interface states analysis of the MIS structure as a function of frequency (2008) (10)
Interpretation of barrier height inhomogeneities in Au/In2S3/SnO2/(In-Ga) structures at low temperatures (2017) (9)
Dielectric Properties of PVP: BaTiO3 Interlayer in the Al/PVP: BaTiO3/P-Si Structure (2021) (9)
On double exponential forward bias current-voltage (I–V) characteristics of Au/Ca3Co4Ga0.001Ox/n-Si/Au (MIS) type structures in temperature range of 80–340 K (2015) (9)
Crystal structure and electrical properties of gadolinia doped bismuth oxide nanoceramic powders (2012) (9)
Investigation of gamma-irradiation effects on electrical characteristics of Al/(ZnO–PVA)/p-Si Schottky diodes using capacitance and conductance measurements (2020) (9)
The effect of gamma irradiation on electrical and dielectric properties of Al-TiW-Pd2Si/n-Si Schottky diode at room temperature (2012) (9)
Trapping levels in TlGaSe2 single crystals (2013) (8)
The reverse bias current–voltage–temperature (I–V–T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80–380 K (2021) (8)
Frequency Response of C–V and G/ω-V Characteristics of Au/(Nanographite-doped PVP)/n-Si Structures (2020) (8)
Electrical characteristics of Au/PVP/n-Si structures using admittance measurements between 1 and 500 kHz (2020) (8)
Effect of (Co–TeO2-doped polyvinylpyrrolidone) organic interlayer on the electrophysical characteristics of Al/p-Si (MS) structures (2021) (8)
The possible current-conduction mechanism in the Au/(CoSO4-PVP)/n-Si junctions (2020) (8)
Thermal Annealing Effects on the Electrical and Structural Properties of Ni/Pt Schottky Contacts on the Quaternary AlInGaN Epilayer (2018) (8)
Investigation of current-voltage characteristics and current conduction mechanisms in composites of polyvinyl alcohol and bismuth oxide (2014) (8)
The concentration of currents on the artificial surface inhomogeneities of semiconducting cathodes in ionization cells (1999) (7)
Investigation of the effect of different Bi2O3–x:PVA (x = Sm, Sn, Mo) thin insulator interface-layer materials on diode parameters (2020) (7)
Illumination effect on I‐V, C‐V and G/w‐V characteristics of AlTiWPd2Si/nSi structures at room temperature (2010) (7)
A Stable Discharge Glow in Gas Discharge System with Semiconducting Cathode (1997) (7)
Identification of Current Transport Mechanisms and Temperature Sensing Qualifications for Al/(ZnS-PVA)/p-Si Structures at Low and Moderate Temperatures (2022) (7)
Electrical and Dielectric Properties of a n-Si Schottky Barrier Diode with Bismuth Titanate Interlayer: Effect of Temperature (2017) (7)
On the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80–360 K (2020) (7)
Identifying of series resistance and interface states on rhenium/n-GaAs structures using C–V–T and G/ω–V–T characteristics in frequency ranged 50 kHz to 5 MHz (2019) (6)
Manufacturing and electrical characterization of Al-doped ZnO-coated silicon nanowires (2018) (6)
Dielectric properties and negative-capacitance/dielectric in Au/n-Si structures with PVC and (PVC:Sm2O3) interlayer (2022) (6)
Irradiation effect on dielectric properties and electrical conductivity of Au/SiO2/n-Si (MOS) structures (2007) (6)
Temperature and frequency dependent dielectric properties of Au/Bi4Ti3O12/SiO2/Si (MFIS) structures (2010) (6)
Preparation and characterization of cross-linked poly (vinyl alcohol)-graphene oxide nanocomposites as an interlayer for Schottky barrier diodes (2018) (6)
The illumination effects on the current conduction mechanisms of the Au/( <scp> Er <sub>2</sub> O <sub>3</sub> </scp> : <scp>PVC</scp> )/ <scp>n‐Si</scp> ( (2022) (6)
High Dielectric Performance of Heterojunction Structures Based on Spin-Coated Graphene-PVP Thin Film on Silicon With Gold Contacts for Organic Electronics (2022) (6)
The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes (2022) (5)
The effect of radiation on the forward and reverse bias current–voltage (I–V) characteristics of Au/(Bi4Ti3O12/SiO2)/n-Si (MFIS) structures (2020) (5)
Study on the Reverse Bias Carrier Transport Mechanism in Au/TiO 2 / n -4H-SiC Structure (2016) (5)
Complex-radical cyclocopolymerization of allyl a-(N-maleimido)acetate with styrene and maleic anhydride (1997) (5)
Frequency Response of Metal–Semiconductor Structures With Thin-Films Sapphire Interlayer by ALD Technique (2021) (5)
Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of Au/Bi4Ti3O12/SnO2 Structures (2007) (5)
A Comparative Study on the Main Electrical Parameters of Au/ n -Si, Au/Biphenyl-CuPc/ n -Si/ and Au/Biphenylsubs-CoPc/ n -Si/ Type Schottky Barrier Diodes (2016) (4)
Extraction of the series resistance and interface states in Au/n-Si(111) Schottky barrier diodes (SBDs) with native insulator layer using I-V-T and C-V-T measurement methods (2010) (4)
A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (Nss) and series resistance (Rs) effects (2022) (4)
Investigation of Dielectric Properties, Electric Modulus and Conductivity of the Au/Zn-Doped PVA/n-4H-SiC (MPS) Structure Using Impedance Spectroscopy Method (2019) (4)
The interfacial properties of Au/n-4H-SiC structure with (Zn-doped PVA) interfacial layer (2020) (4)
The effect of side-chain liquid crystalline concentration in liquid crystal on dielectric properties (2012) (4)
Controlling the electrical characteristics of Au/n‐Si structure with and without (biphenyl‐CoPc) and (OHSubs‐ZnPc) interfacial layers at room temperature (2017) (3)
Current-transport mechanism in Au/V-doped PVC+TCNQ/p-Si structures (2015) (3)
The Impact of Dopant on the Dielectric Properties of Metal-Semiconductor With ZnFe2O4 Doped Organic Polymer Nanocomposites Interlayer (2022) (3)
The forward bias current density–voltage–temperature (J–V–T) characteristics of Al–SiO2–pSi (MIS) Schottky diodes (2011) (3)
The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1−xN/AlN/GaN heterostructures (2010) (3)
PEI N-doped graphene quantum dots/p-type silicon Schottky diode (2022) (3)
On the interface states and series resistance profiles of (Ni/Au)–Al0.22Ga0.78N/AlN/GaN heterostructures before and after 60Co (γ-ray) irradiation (2010) (3)
Investigation of effects on dielectric properties of different doping concentrations of Au/Gr-PVA/p-Si structures at 0.1 and 1 MHz at room temperature (2020) (3)
Temperature dependence of electrical characteristics and interface state densities of Au/n-type Si structures with SnS doped PVC interface (2022) (3)
Utilization of Al2O3/PVP nanocomposite as an interfacial layer for Schottky structures (2019) (3)
Gaussian distribution in current-conduction mechanism of (Ni/Pt) Schottky contacts on wide bandgap AlInGaN quaternary alloy (2018) (3)
Photoelectrical properties of semiconductor in contact with gas discharge plasma (1997) (3)
ILLUMINATION DEPENDENT ELECTRICAL CHARACTERISTICS OF PTSI / NSI ( 111 ) SCHOTTKY BARRIER DIODES ( SBDS ) AT ROOM TEMPERATURE (2017) (2)
Comparison of dielectric characteristics for metal–semiconductor structures fabricated with different interlayers thicknesses (2021) (2)
Electrical characteristics of Au/n-GaAs structures with thin and thick SiO2 dielectric layer (2011) (2)
EFFECT OF SURFACE STATES ON ELECTRICAL CHARACTERISTIC OF METAL-INSULATOR-SEMICONDUCTOR(MIS) DIODES (2003) (2)
Electrical characteristics of Au/PVA (x-doped)/n-Si: Comparison study on the effect of dopant type in PVA (2014) (2)
DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric (2022) (2)
All‐Dielectric Fabry–Pérot Cavity Design for Spectrally Selective Mid‐Infrared Absorption (2021) (2)
The capacitance/conductance and surface state intensity characteristics of the Schottky structures with ruthenium dioxide-doped organic polymer interface (2023) (2)
A semiconductor photographic system for high-speed measurement (1998) (2)
On the profile of temperature dependent main electrical parameters in Al/P3HT/p-Si (MPS) structures at low temperatures (2019) (2)
Two-diode behavior in metal-ferroelectric-semiconductor structures with bismuth titanate interfacial layer (2017) (2)
Vertical CdTe:PVP/p-Si-Based Temperature Sensor by Using Aluminum Anode Schottky Contact (2022) (2)
Illumination Effect on Admittance Measurements of Polyvinyl Alcohol (Co, Zn‐Doped)/n‐Si Schottky Barrier Diodes in Wide Frequency and Applied Bias Voltage Range (2011) (1)
21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics With a Novel Drive Mode (2022) (1)
MBE-growth and characterization of InxGa1¡xAs/GaAs (x=0.15) superlattice (2008) (1)
The effect of frequency and illumination intensity on the main electrical characteristics of Al-TiW-Pd2Si/n-Si structures at room temperature (2010) (1)
The determination of the temperature and voltage dependence of the main device parameters of Au/7%Gr-doped PVA/n-GaAs-type Schottky Diode (SD) (2020) (1)
Enhancement of the Sensitivity of an Ionization Type Semiconductor Photographic System (1996) (1)
The effect of different rates of ultra-thin gossamer-like rGO coatings on photocatalytic performance in ZnO core-shell structures for optoelectronic applications (2022) (1)
A study of polymer-derived erbia-doped Bi2O3 nanocrystalline ceramic powders (2013) (1)
On the Anomalous Peak and Negative Capacitance in the Forward-Bias C-V Plot in Al/Mo-doped (PVC+TCNQ)/p-Si (MPS) Capacitors (2016) (1)
Dielectric properties of $$\hbox {Ag/Ru}_{0.03}$$–PVA/n-Si structures (2019) (1)
Dielectric properties of Ag/Ru0.03–PVA/n-Si structures (2019) (1)
The Investigation of Frequency and Voltage Dependence of Electrical Characteristics in Al/P3HT/p-Si (MPS) Structures (2019) (1)
Frequency dependent electrical and dielectric properties of the Au/(RuO2:PVC)/n-Si (MPS) structures (2023) (0)
Correction to: Identifying of series resistance and interface states on rhenium/n-GaAs structures using C–V–T and G/ω–V–T characteristics in frequency ranged 50 kHz to 5 MHz (2019) (0)
N / AlN / GaN heterostructures before and after 60 Co ( γ-ray ) irradiation (2010) (0)
Influence of Gas Medium on the Sensitivity of an Ionization Type Semiconductor Photographic System (1997) (0)
Frequency and Voltage Dependence of Dielectric Loss of MgB2 Composites at Different Temperatures (2013) (0)
Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range (2016) (0)
A Comparative Study on Electrical Characteristics of Au/n-SiC structure, with and Without Zn-Doped PVA Interfacial Layer at Room Temperature (2016) (0)
The rapid visualization of resistivity inhomogeneities in high-resistivity semiconductor films (1997) (0)
The Influence of PVC and (PVC:SnS) Interfacial Polymer Layers on the Electric and Dielectric Properties of Au/n-Si Structure (2022) (0)
Comparative study of the temperature-dependent dielectric properties of Au/PPy/n-Si (MPS)-type Schottky barrier diodes (2015) (0)
Photoresponse properties of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode (2021) (0)
チタン酸ビスマス中間層を有するn‐Siショットキーバリアダイオードの電気的および誘電特性:温度の影響 (2017) (0)
Coherent infrared image converter based on GaAs and BSO crystals (2001) (0)
Frequency and Voltage Dependence of Dielectric Loss of MgB2 Composites at Different Temperatures (2012) (0)
Gaussian distribution of inhomogeneous barrier height in Al/p-GaAs Schottky Barrier Diodes (SBDs) (2015) (0)
Electrical and dielectric properties and intersection behavior of G/ω-V plots for Al/Co-PVA/p-Si (MPS) structures at temperatures below room temperature (2014) (0)
Electronic transport of Au//n-Si structures analysed over a wide temperature range (2015) (0)
Thermal Annealing Effects on the Electrical and Structural Properties of Ni / Pt Schottky Contacts on the Quaternary AlInGaN (2018) (0)
Negative Capacitance Behavior at Low Frequencies of Nitrogen-Doped Polyethylenimine-Functionalized Graphene Quantum Dots-Based Structure (2023) (0)
The effect of (CeO2: PVC) thin interfacial film on the electrical features in Au/n-Si Schottky barrier diodes (SBDs) by using current–voltage measurements (2023) (0)
Effect of radiation stress on C - V and G - V characteristics of Au/SnO 2 /n-Si MIS structure (2002) (0)
ADSORPTION OF Ni AND ITS INTERACTION WITH CsCl MOLECULES ON THE GRAPHITE MONOLAYER OF IRIDIUM (2003) (0)
Basic Electrical Parameters of the Au/(Pvc:Ruo2)/N-Si (Mps) Structures as a Function of Frequency (2022) (0)
The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO2:PVC) interface (2023) (0)
Design, Fabrication, and Characterization of a Dielectric Multilayer Broadband Infrared Meta-Absorber (2021) (0)
Analysis Of Formation Of Silicon Nitride On Si(100) By Electrochemical Anodization Technique (2008) (0)
Illumination Dependent Admittance Characteristics of Au/Zinc Acetate Doped Polyvinyl Alcohol (PVA:Zn)/n‐Si Schottky Barrier Diodes (SBDs) (2011) (0)
On the investigation of frequency-dependent dielectric features in Schottky barrier diodes (SBDs) with polymer interfacial layer doped by graphene and ZnTiO3 nanostructures (2023) (0)
Morphological and Structural Properties of Metamaterial Based on ITO/Sapphire/ZnS/Al Superlattice (2019) (0)
Role of graphene nanoparticles on the electrophysical processes in PVP and PVP: ZnTiO3 polymer layers at Schottky diode (SD) (2023) (0)
Improvement of electric and photoelectric properties of the Al/n-ZnO/p-Si/Al photodiodes by green synthesis method using chamomille flower extract (2023) (0)
Investigation of dielectric relaxation and ac conductivity in Au/(carbon nanosheet-PVP composite)/n-Si capacitors using impedance measurements (2023) (0)

This paper list is powered by the following services:

What Schools Are Affiliated With Şemsetti̇n Altindal?

Şemsetti̇n Altindal is affiliated with the following schools:

Gazi University