Şemsetti̇n Altindal
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Physics
Şemsetti̇n Altindal's Degrees
- PhD Physics Middle East Technical University
- Masters Physics Middle East Technical University
- Bachelors Physics Middle East Technical University
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(Suggest an Edit or Addition)Şemsetti̇n Altindal's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(1 0 0) Schottky contacts (2003) (242)
- The role of interface states and series resistance on the I–V and C–V characteristics in Al/SnO2/p-Si Schottky diodes (2003) (191)
- Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure (2005) (172)
- Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes (2010) (123)
- Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures (2006) (117)
- Characterization of current-voltage (I-V) and capacitance-voltage-frequency (C-V-f) features of Al/SiO2/p-Si (MIS) Schottky diodes (2006) (117)
- Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I–V–T and C–V–T measurements (2007) (108)
- Temperature dependence of characteristic parameters of the Au/SnO2/n-Si (MIS) Schottky diodes (2007) (107)
- Frequency and voltage effects on the dielectric properties and electrical conductivity of Al-TiW-Pd2Si/n-Si structures (2008) (105)
- The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range (2006) (103)
- Current transport in Zn/p-Si(1 0 0) Schottky barrier diodes at high temperatures (2005) (103)
- The analysis of the series resistance and interface states of MIS Schottky diodes at high temperatures using I–V characteristics (2009) (95)
- The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures (2008) (95)
- The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer (2010) (89)
- Dislocation-governed current-transport mechanism in (Ni/Au)-AlGaN/AlN/GaN heterostructures (2009) (88)
- The origin of anomalous peak and negative capacitance in the forward bias capacitance-voltage characteristics of Au/PVA/n-Si structures (2011) (88)
- Analysis of I-V characteristics on Au/n-type GaAs schottky structures in wide temperature range (2005) (84)
- Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs(1 1 0) schottky barrier diodes (2015) (83)
- The effect of interface states, excess capacitance and series resistance in the Al/SiO2/p-Si schottky diodes (2005) (78)
- Density of interface states, excess capacitance and series resistance in the metal–insulator–semiconductor (MIS) solar cells (2005) (77)
- On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures (2008) (77)
- Tunneling current via dislocations in Schottky diodes on AlInN/AlN/GaN heterostructures (2009) (76)
- On the intersecting behaviour of experimental forward bias current–voltage (I–V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes at low temperatures (2006) (76)
- On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs) (2014) (75)
- The behavior of the I‐V‐T characteristics of inhomogeneous (Ni∕Au)–Al0.3Ga0.7N∕AlN∕GaN heterostructures at high temperatures (2007) (75)
- Analysis of electrical characteristics of Au/SiO2/n-Si (MOS) capacitors using the high-low frequency capacitance and conductance methods (2008) (74)
- Effect of series resistance and interface states on the I–V, C–V and G/ω–V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature (2012) (74)
- Temperature dependent current-transport mechanism in Au/(Zn-doped)PVA/n-GaAs Schottky barrier diodes (SBDs) (2013) (74)
- Two diodes model and illumination effect on the forward and reverse bias I–V and C–V characteristics of Au/PVA (Bi-doped)/n-Si photodiode at room temperature (2013) (72)
- Influence of frequency and bias voltage on dielectric properties and electrical conductivity of Al/TiO2/p-Si/p+ (MOS) structures (2008) (71)
- Gaussian distribution of inhomogeneous barrier height in Al/SiO2/p-Si Schottky diodes (2008) (71)
- On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes (2006) (71)
- Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures (2010) (70)
- The effect of series resistance and interface states on the frequency dependent C–V and G/w–V characteristics of Al/perylene/p-Si MPS type Schottky barrier diodes (2013) (69)
- Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions (2016) (69)
- On the conduction mechanisms of Au/(Cu2O–CuO–PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current–voltage–temperature (I–V–T) characteristics (2017) (68)
- The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer (2006) (68)
- A detailed study on current–voltage characteristics of Au/n-GaAs in wide temperature range (2013) (68)
- The distribution of barrier heights in MIS type Schottky diodes from current–voltage–temperature (I–V–T) measurements (2009) (68)
- Investigation of Electrical Characteristics in Al/CdS-PVA/p-Si (MPS) Structures Using Impedance Spectroscopy Method (2016) (67)
- On the profile of frequency dependent series resistance and dielectric constant in MIS structure (2007) (67)
- The source of negative capacitance and anomalous peak in the forward bias capacitance-voltage in Cr/p-si Schottky barrier diodes (SBDs) (2015) (67)
- Charge transport mechanisms and density of interface traps in MnZnO/p-Si diodes (2014) (65)
- On the energy distribution of interface states and their relaxation time and capture cross section profiles in Al/SiO2/p-Si (MIS) Schottky diodes (2008) (64)
- Current conduction mechanism in Al/p-Si Schottky barrier diodes with native insulator layer at low temperatures (2007) (64)
- Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes (2014) (63)
- Electrical and photocurrent characteristics of Au/PVA (Co-doped)/n-Si photoconductive diodes (2012) (61)
- The influence of series resistance and interface states on intersecting behavior of I–V characteristics of Al/TiO2/p-Si (MIS) structures at low temperatures (2008) (60)
- Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures (2013) (59)
- Analysis of interface states and series resistance of MIS Schottky diodes using the current-voltage (I-V) characteristics (2008) (59)
- Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer (2011) (57)
- Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range (2016) (56)
- Effects of 60Co γ-ray irradiation on the electrical characteristics of Au/n-GaAs (MS) structures (2005) (56)
- Anomalous Peak in the Forward-Bias C–V Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) Structures (2011) (55)
- The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs) (2012) (55)
- Frequency and voltage dependence of dielectric properties and electric modulus in Au/PVC + TCNQ/p-Si structure at room temperature (2014) (54)
- Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C–V and G/ω–V characteristics (2012) (53)
- Current–voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range (2010) (52)
- Analysis of surface states and series resistance in Au/n-Si Schottky diodes with insulator layer using current-voltage and admittance-voltage characteristics (2009) (51)
- Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures (2017) (51)
- Frequency and voltage dependence dielectric properties, ac electrical conductivity and electric modulus profiles in Al/Co 3 O 4 -PVA/p-Si structures (2016) (50)
- A detailed study of current-voltage characteristics in Au/SiO2/n-GaAs in wide temperature range (2009) (50)
- Frequency and gate voltage effects on the dielectric properties of Au/SiO2/n-Si structures (2008) (50)
- Dielectric properties and ac electrical conductivity studies of MIS type Schottky diodes at high temperatures (2008) (49)
- The C–V–f and G/ω–V–f characteristics of Al/SiO2/p-Si (MIS) structures (2006) (49)
- The interface states and series resistance effects on the forward and reverse bias I–V, C–V and G/ω-V characteristics of Al–TiW–Pd2Si/n-Si Schottky barrier diodes (2010) (48)
- Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities (2016) (48)
- A compare of electrical characteristics in Al/p-Si (MS) and Al/C20H12/p-Si (MPS) type diodes using current–voltage (I–V) and capacitance–voltage (C–V) measurements (2015) (48)
- Synthesis, electrical and photo-sensing characteristics of the Al/(PCBM/NiO: ZnO)/p-Si nanocomposite structures (2021) (48)
- Forward and reverse bias current–voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO2 insulator layer (2011) (46)
- On the mechanism of current-transport in Cu/CdS/SnO2/In–Ga structures (2011) (46)
- Analysis of the forward and reverse bias I-V characteristics on Au/PVA:Zn/n-Si Schottky barrier diodes in the wide temperature range (2011) (46)
- The barrier height distribution in identically prepared Al/p-Si Schottky diodes with the native interfacial insulator layer (SiO2) (2007) (45)
- Dielectric properties, electrical modulus and current transport mechanisms of Au/ZnO/n-Si structures (2018) (45)
- Frequency and voltage dependence of negative capacitance in Au/SiO2/n-GaAs structures (2012) (44)
- The investigation of current-conduction mechanisms (CCMs) in Au/ (0.07Zn-PVA)/n-4H-SiC (MPS) Schottky diodes (SDs) by using (I-V-T) measurements (2018) (43)
- Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage (2020) (43)
- Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) (2019) (43)
- Temperature and voltage dependent current-transport mechanisms in GaAs/AlGaAs single-quantum-well lasers (2010) (43)
- Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures (2011) (42)
- The Au/polyvinyl alcohol (Co, Zn-doped)/n-type silicon Schottky barrier devices (2011) (42)
- A comparative study on the electrical characteristics of Au/n-Si structures with anatase and rutile phase TiO2 interfacial insulator layer (2010) (42)
- Investigation of frequency and voltage dependence surface states and series resistance profiles using admittance measurements in Al/p-Si with Co 3 O 4 -PVA interlayer structures (2017) (42)
- On the anomalous peak and negative capacitance in the capacitance–voltage (C–V) plots of Al/(%7 Zn-PVA)/p-Si (MPS) structure (2018) (41)
- Effectuality of Barrier Height Inhomogeneity on the Current–Voltage–Temperature Characteristics of Metal Semiconductor Structures with CdZnO Interlayer (2018) (41)
- Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature (2014) (41)
- Comparison of electrical properties of MS and MPS type diode in respect of (In2O3-PVP) interlayer (2020) (40)
- On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO2–PVA/n-Si Schottky barrier diodes (2017) (40)
- Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode (2017) (40)
- The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature (2016) (39)
- Au/SnO2/n-Si (MOS) structures response to radiation and frequency (2003) (39)
- Electrical characterization of current conduction in Au/TiO2/n-Si at wide temperature range (2009) (38)
- A detailed comparative study on the main electrical parameters of Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes (2013) (38)
- Formation of ZnO nanopowders by the simple ultrasound-assisted method: Exploring the dielectric and electric properties of the Au/(ZnO-PVA)/n-Si structure (2018) (38)
- A comparative study on the electrical and dielectric properties of Al/Cd-doped ZnO/p-Si structures (2019) (38)
- Electrical and photovoltaic properties of Au/(Ni, Zn)-doped PVA/n-Si structures in dark and under 250 W illumination level (2014) (37)
- Characterization of interface states at Au/SnO2/n-Si (MOS) structures (2008) (37)
- Determining electrical and dielectric parameters of dependence as function of frequencies in Al/ZnS-PVA/p-Si (MPS) structures (2016) (37)
- Temperature dependent electrical characteristics of AlSiOxpSi solar cells (1994) (37)
- The illumination intensity and applied bias voltage on dielectric properties of au/polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes (2011) (36)
- Temperature dependent capacitance and conductance-voltage characteristics of Au/polyvinyl alcohol(Co,Zn)/n-Si Schottky diodes (2010) (36)
- Electrical characteristics of Au/n-GaAs Schottky barrier diodes with and without SiO2 insulator layer at room temperature (2009) (36)
- Possible current-transport mechanisms in the (Ni/Au)/Al0.22Ga0.78N/AlN/GaN Schottky barrier diodes at the wide temperature range (2010) (36)
- The effects of preparation temperature on the main electrical parameters of Al/TiO2/p-Si (MIS) structures by using sol–gel method (2009) (35)
- A comparative study on current/capacitance: voltage characteristics of Au/n-Si (MS) structures with and without PVP interlayer (2019) (35)
- Electric and Dielectric Properties of Au/ZnS-PVA/n-Si (MPS) Structures in the Frequency Range of 10–200 kHz (2017) (35)
- Study on the frequency dependence of electrical and dielectric characteristics of Au/SnO2/n-Si (MIS) structures (2008) (35)
- On the temperature dependent dielectric properties, conductivity and resistivity of MIS structures at 1MHz (2012) (35)
- Temperature dependence of forward and reverse bias current–voltage characteristics in Al–TiW–PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier (2013) (35)
- The C–V–f and G/ω–V–f characteristics of Au/SiO2/n-Si capacitors (2007) (35)
- Electrical characteristics of 60Co γ-ray irradiated MIS Schottky diodes (2006) (34)
- Schottky diode properties of CuInSe2 films prepared by a two-step growth technique (2012) (34)
- The fabrication of Al/p-Si (MS) type photodiode with (%2 ZnO-doped CuO) interfacial layer by sol gel method and their electrical characteristics (2019) (34)
- Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes (2015) (34)
- Dielectric spectroscopy studies and ac electrical conductivity on (AuZn)/TiO2/p-GaAs(110) MIS structures (2015) (33)
- The origin of negative capacitance in Au/n-GaAs Schottky barrier diodes (SBDs) prepared by photolithography technique in the wide frequency range (2013) (33)
- Frequency-Dependent Admittance Analysis of the Metal–Semiconductor Structure With an Interlayer of Zn-Doped Organic Polymer Nanocomposites (2018) (33)
- 60Co γ irradiation effects on the current-voltage (I-V) characteristics of Al/SiO2/p-Si (MIS) Schottky diodes (2006) (33)
- Frequency and voltage dependence of electrical and dielectric properties in metal-interfacial layer-semiconductor (MIS) type structures (2020) (33)
- Examination of dielectric response of Au/HgS-PVA/n-Si (MPS) structure by impedance spectroscopy method (2019) (33)
- A comparison of electrical parameters of Au/n-Si and Au/(CoSO4–PVP)/n-Si structures (SBDs) to determine the effect of (CoSO4–PVP) organic interlayer at room temperature (2019) (33)
- Effect of series resistance on the performance of silicon Schottky diode in the presence of tin oxide layer (2005) (32)
- Preparation of mixed copper/PVA nanocomposites as an interface layer for fabrication of Al/Cu-PVA/p-Si Schottky structures (2018) (32)
- Frequency dependent dielectric properties and electrical conductivity of platinum silicide/Si contact structures with diffusion barrier (2012) (31)
- On the Frequency and Voltage-Dependent Profiles of the Surface States and Series Resistance of Au/ZnO/n-Si Structures in a Wide Range of Frequency and Voltage (2017) (31)
- Temperature dependence of barrier heights of Au/n-type GaAs Schottky diodes (2005) (30)
- On the temperature dependent forward bias current–voltage (I–V) characteristics in Au/2% graphene–cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure (2015) (30)
- Electrical and dielectric properties of Al/(PVP: Zn-TeO2)/p-Si heterojunction structures using current–voltage (I–V) and impedance-frequency (Z–f) measurements (2020) (29)
- Electrical characteristics of Au/n-Si (MS) Schottky Diodes (SDs) with and without different rates (graphene + Ca1.9Pr0.1Co4Ox-doped poly(vinyl alcohol)) interfacial layer (2017) (29)
- Effects of interface states and series resistance on electrical properties of Al/nanostructure CdO/p-GaAs diode (2012) (29)
- Irradiation effects on the C–V and G/ω–V characteristics of Sn/p-Si (MS) structures (2009) (29)
- Dielectric, modulus and conductivity studies of Au/PVP/n-Si (MPS) structure in the wide range of frequency and voltage at room temperature (2019) (29)
- The effects of (Bi2Te3–Bi2O3-TeO2-PVP) interfacial film on the dielectric and electrical features of Al/p-Si (MS) Schottky barrier diodes (SBDs) (2020) (29)
- Temperature dependence of characteristic parameters of the Au/C20H12/n-Si Schottky barrier diodes (SBDs) in the wide temperature range (2017) (28)
- Investigation of negative dielectric constant in Au/1 % graphene (GP) doped-Ca1.9Pr0.1Co4Ox/n-Si structures at forward biases using impedance spectroscopy analysis (2015) (28)
- Series resistance and interface states effects on the C–V and G/w–V characteristics in Au/(Co3O4-doped PVA)/n-Si structures at room temperature (2017) (28)
- A Comparative Study on Electrical Characteristics of Au/N-Si Schottky Diodes, with and Without Bi-Doped PVA Interfacial Layer in Dark and Under Illumination at Room Temperature (2017) (27)
- The effect of Mo-doped PVC+TCNQ interfacial layer on the electrical properties of Au/PVC+TCNQ/p-Si structures at room temperature (2015) (27)
- A comparative study on the electrical properties and conduction mechanisms of Au/n-Si Schottky diodes with/without an organic interlayer (2020) (27)
- The frequency and voltage dependent electrical characteristics of Al-TiW-Pd2Si/n-Si structure using I-V, C-V and G/ω-V measurements (2008) (26)
- Frequency and Temperature Dependence of Dielectric Properties of Au/Polyvinyl Alcohol (Co, Ni-Doped)/n-Si Schottky Diodes (2010) (26)
- Illumination effect on electrical characteristics of organic-based Schottky barrier diodes (2010) (26)
- Diode-to-diode variation in dielectric parameters of identically prepared metal-ferroelectric-semiconductor structures (2017) (26)
- Temperature and voltage dependences of dielectric properties and ac electrical conductivity in Au/PVC+TCNQ/p-Si structures (2014) (26)
- On the analysis of the leakage current in Au/Ca3Co4Ga0.001Ox/n-Si structure in the temperature range of 80–340 K (2015) (26)
- The effect of gamma irradiation on electrical and dielectric properties of organic-based Schottky barrier diodes (SBDs) at room temperature (2012) (26)
- The profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures (2008) (25)
- Capacitance/Conductance–Voltage–Frequency Characteristics of ${\rm Au}/{\rm PVC}+{\rm TCNQ}/{\rm p}\hbox{-}{\rm Si}$ Structures in Wide Frequency Range (2014) (25)
- Effects of a Thin Ru-Doped PVP Interface Layer on Electrical Behavior of Ag/n-Si Structures (2018) (25)
- The study on negative dielectric properties of Al/PVA (Zn-doped)/p-Si (MPS) capacitors (2018) (25)
- The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal-polymer-semiconductor structures/diodes studied by temperature-dependent impedance measurements (2020) (25)
- Evaluation of Electric and Dielectric Properties of Metal–Semiconductor Structures With 2% GC-Doped-(Ca3Co4Ga0.001Ox) Interlayer (2018) (24)
- On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures (2011) (24)
- The effect of frequency and temperature on capacitance/conductance–voltage (C/G–V) characteristics of Au/n-GaAs Schottky barrier diodes (SBDs) (2014) (24)
- Effect of Vanadium Substitution on the Dielectric Properties of Glass Ceramic Bi-2212 Superconductor (2011) (24)
- Current–voltage characteristics of Al/Rhodamine-101/n-GaAs and Cu/Rhodamine-101/n-GaAs rectifier contacts (2007) (24)
- C-V-f and G/ω-V-f characteristics of Au/(In2O3-PVP)/n-Si (MPS) structure (2020) (24)
- The current–voltage and capacitance–voltage characteristics at high temperatures of Au Schottky contact to n-type GaAs (2014) (23)
- On the energy distribution profile of interface states obtained by taking into account of series resistance in Al/TiO2/p–Si (MIS) structures (2011) (23)
- The effect of 60Co (γ-ray) irradiation on the electrical characteristics of Au/SnO2/n-Si (MIS) structures (2008) (23)
- Recording the resistance inhomogeneity in high-resistivity semiconductors plates (1995) (23)
- The temperature profile and bias dependent series resistance of Au/Bi4Ti3O12/SiO2/n-Si (MFIS) structures (2008) (22)
- The effects of surface states and series resistance on the performance of Au/SnO2/n-Si and Al/SnO2/p-Si (MIS) Schottky barrier diodes (2010) (22)
- Electrical characterization of novel Si solar cells (2006) (22)
- Frequency-Dependent Admittance Analysis of Au/n-Si Structure with CoSO4-PVP Interfacial Layer (2020) (21)
- On the temperature dependent profile of interface states and series resistance characteristics in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures (2010) (21)
- Frequency dependent C–V and G/ω–V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes (2017) (21)
- The distribution of the barrier height in Al–TiW–Pd2Si/n-Si Schottky diodes from I–V–T measurements (2008) (21)
- Effect of illumination on electrical parameters of Au/(P3DMTFT)/n-GaAs Schottky barrier diodes (2019) (21)
- Energy density distribution profiles of surface states, relaxation time and capture cross-section in Au/n-type 4H-SiC SBDs by using admittance spectroscopy method (2014) (21)
- Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes (2013) (20)
- Investigation of the efficiencies of the (SnO2-PVA) interlayer in Au/n-Si (MS) SDs on electrical characteristics at room temperature by comparison (2019) (20)
- Investigation of the variation of dielectric properties by applying frequency and voltage to Al/(CdS-PVA)/p-Si structures (2021) (20)
- The effects of temperature, radiation, and illumination on current–voltage characteristics of Au/PVA(Co, Zn-doped)/n-Si Schottky diodes (2012) (20)
- Preparation of (CuS–PVA) interlayer and the investigation their structural, morphological and optical properties and frequency dependent electrical characteristics of Au/(CuS–PVA)/n-Si (MPS) structures (2018) (20)
- Investigation of the C-V characteristics that provides linearity in a large reverse bias region and the effects of series resistance, surface states and interlayer in Au/n-Si/Ag diodes (2017) (20)
- Gaussian distribution of inhomogeneous barrier height in Al0.24Ga0.76As/GaAs structures (2007) (20)
- Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80 K to 320 K (2012) (20)
- On the temperature dependence of series resistance and interface states in Al/SiO2/p-Si (MIS) Schottky diodes (2008) (20)
- Frequency, voltage and illumination interaction with the electrical characteristics of the CdZnO interlayered Schottky structure (2019) (19)
- Controlling the electrical characteristics of Al/p-Si structures through Bi4Ti3O12 interfacial layer (2013) (19)
- Interfacial layer thickness dependent electrical characteristics of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures at room temperature (2017) (19)
- Synthesis of boron and rare earth stabilized graphene doped polyvinylidene fluoride (PVDF) nanocomposite piezoelectric materials (2019) (19)
- Current transport properties of (Au/Ni)/HfAlO3/n-Si metal–insulator–semiconductor junction (2021) (19)
- A comparative electric and dielectric properties of Al/p-Si structures with undoped and Co-doped interfacial PVA layer (2014) (19)
- Integration of Zn-doped organic polymer nanocomposites between metal semiconductor structure to reveal the electrical qualifications of the diodes (2018) (18)
- Evaluation of gamma-irradiation effects on the electrical properties of Al/(ZnO-PVA)/p-Si type Schottky diodes using current-voltage measurements (2021) (18)
- Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al 2 O 3 =n-GaAs with Thin Al 2 O 3 Interfacial Layer at Room Temperature (2016) (18)
- Frequency dependence of the dielectric properties of Au/(NG:PVP)/n-Si structures (2021) (18)
- The Structural and Electrical Properties of the Au/n-Si (MS) Diodes With Nanocomposites Interlayer (Ag-Doped ZnO/PVP) by Using the Simple Ultrasound-Assisted Method (2019) (18)
- Analysis of electrical characteristics and conduction mechanisms in the Al/(%7 Zn-doped PVA)/p-Si (MPS) structure at room temperature (2017) (18)
- The effect of gamma irradiation on electrical characteristics of Au/Polyvinyl Alcohol (Co,Zn-doped)/n-Si Schottky barrier diodes (2010) (18)
- Characteristic features of an ionization system with semiconducting cathode (1998) (18)
- Illumination intensity effects on the dielectric properties of schottky devices with Co, Ni-doped PVA nanofibers as an interfacial layer (2012) (18)
- On the Voltage and Frequency Distribution of Dielectric Properties and ac Electrical Conductivity in Al/SiO2/p-Si (MOS) Capacitors (2013) (18)
- A comparison of electrical characteristics of Au/n-Si (MS) structures with PVC and (PVC: Sm2O3) polymer interlayer (2021) (18)
- Effects of illumination and 60Co γ-ray irradiation on the electrical characteristics of porous silicon solar cells (2008) (18)
- On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60–400 K (2019) (18)
- Dielectric and Optical Properties of CdS–Polymer Nanocomposites Prepared by the Successive Ionic Layer Adsorption and Reaction (SILAR) Method (2014) (17)
- Analysis of temperature dependent electrical characteristics of Au/n-GaAs/GaAs structures in a wide temperature range (2008) (17)
- A Highly Sensitive Temperature Sensor Based on Au/Graphene-PVP/n-Si Type Schottky Diodes and the Possible Conduction Mechanisms in the Wide Range Temperatures (2020) (17)
- Electric and dielectric parameters in Au/n-Si (MS) capacitors with metal oxide-polymer interlayer as function of frequency and voltage (2020) (17)
- Dielectric properties and electric modulus of Au/PPy/n-Si (MPS) type Schottky barrier diodes (SBDS) as a function of frequency and applied bias voltage (2015) (17)
- Electrical and dielectric properties and intersection behavior of G/ω-V plots for Al/Co-PVA/p-Si (MPS) structures at temperatures below room temperature (2014) (17)
- On the profile of frequency and voltage dependent interface states and series resistance in MIS structures (2007) (17)
- A Compare Study on Electrical Properties of MS Diodes with and Without CoFe2O4-PVP Interlayer (2020) (17)
- Effect of inorganic salts on the main parameters of the dilute aqueous poly(vinylpyrrolidone) solutions (1996) (17)
- The effect of cadmium impurities in the (PVP–TeO2) interlayer in Al/p-Si (MS) Schottky barrier diodes (SBDs): Exploring its electrophysical parameters (2020) (17)
- Electronic transport of Au/(Ca1.9Pr0.1Co4Ox)/n-Si structures analysed over a wide temperature range (2015) (17)
- On the frequency dependent negative dielectric constant behavior in Al/Co-doped (PVC+TCNQ)/p-Si structures (2014) (16)
- Fabrication, structural and electrical characterization of Au/ (CuSe-polyvinyl alcohol)/n-Si (MPS) Schottky barrier structures (2019) (16)
- The role of 60Co γ-ray irradiation on the interface states and series resistance in MIS structures (2010) (16)
- Correlation between barrier height and ideality factor in identically prepared diodes of Al/Bi4Ti3O12/p-Si (MFS) structure with barrier inhomogeneity (2017) (16)
- On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements (2020) (16)
- On the frequency and voltage-dependent main electrical parameters of the Au/ZnO/n-GaAs structures at room temperature by using various methods (2020) (16)
- Electrical and dielectric properties of Au/1% graphene (GP)+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)/n-Si structures as function of temperature and voltage (2015) (16)
- Comparative Analysis of Temperature-Dependent Electrical and Dielectric Properties of an $\hbox{Al}{-}\hbox{TiW}{-}\hbox{Pd}_{2}\hbox{Si/n-Si}$ Schottky Device at Two Frequencies (2011) (15)
- Dielectric properties in Au/SnO2/n-Si (MOS) structures irradiated under 60Co-gamma rays (2004) (15)
- The effects of the temperature on I-V and C-V characteristics of Al/P2ClAn(C2H5COOH)/p-Si/Al structure (2009) (15)
- The effects of frequency and γ-irradiation on the dielectric properties of MIS type Schottky diodes (2007) (15)
- Role of Graphene-Doped Organic/Polymer Nanocomposites on the Electronic Properties of Schottky Junction Structures for Photocell Applications (2018) (15)
- On the energy distribution of interface states and their relaxation time profiles in Al/pentacene/p-GaAs heterojunction diode (2012) (15)
- On the origin of increase in the barrier height and decrease in ideality factor with increase temperature in Ag/SiO2/p-Si (MIS) Schottky Barrier Diodes (SBDs) (2015) (15)
- Comparative study of the temperature-dependent dielectric properties of Au/PPy/n-Si (MPS)-type Schottky barrier diodes (2015) (15)
- Analysis of interface states and series resistance at MIS structure irradiated under 60Co γ-rays (2007) (14)
- Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes (2020) (14)
- Comparison of the electrical and impedance properties of Au/(ZnOMn:PVP)/n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation (2021) (14)
- On the negative capacitance behavior in the forward bias of Au/n–4H–SiC (MS) and comparison between MS and Au/TiO2/n–4H–SiC (MIS) type diodes both in dark and under 200 W illumination intensity (2015) (14)
- Current-transport mechanisms in gold/polypyrrole/n-silicon Schottky barrier diodes in the temperature range of 110–360 K (2014) (14)
- A comparative study on the electrical parameters of Au/n-Si Schottky diodes with and without interfacial (Ca1.9Pr0.1Co4Ox) layer (2016) (14)
- Frequency and voltage-dependent electrical parameters, interface traps, and series resistance profile of Au/(NiS:PVP)/n-Si structures (2021) (14)
- Frequency and voltage dependent surface states and series resistance of novel Si solar cells (2006) (14)
- Investigation of photovoltaic effect on electric and dielectric properties of Au/n-Si Schottky barrier diodes with nickel (Ni)–zinc (Zn) doped organic interface layer (2018) (14)
- On the profile of frequency and voltage dependent interface states and series resistance in (Ni/Au)/Al0.22Ga0.78N/AlN/GaN heterostructures by using current-voltage (I-V) and admittance spectroscopy methods (2011) (14)
- Determination of Surface States Energy Density Distributions and Relaxation Times for a Metal-Polymer-Semiconductor Structure (2019) (14)
- Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures (2020) (14)
- Illumination and voltage effects on the forward and reverse bias current–voltage (I-V) characteristics in In/In2S3/p-Si photodiodes (2021) (13)
- Electrical characterization of Au/n-Si (MS) diode with and without graphene-polyvinylpyrrolidone (Gr-PVP) interface layer (2021) (13)
- Analyses of temperature-dependent interface states, series resistances, and AC electrical conductivities of Al/p—Si and Al/Bi4Ti3O12/p—Si structures by using the admittance spectroscopy method (2013) (13)
- The effect of metal work function on the barrier height of metal/CdS/SnO2/In–Ga structures (2013) (13)
- Temperature dependent conductivity and structural properties of sol–gel prepared holmium doped Bi2O3 nanoceramic powder (2012) (13)
- Effects of beta-ray irradiation on the C–V and G/ω–V characteristics of Au/SiO2/n-Si (MOS) structures (2007) (12)
- Preparation and dielectric properties of polyvinyl alcohol (Co, Zn Acetate) Fiber/n-Si and polyvinyl alcohol (Ni, Zn Acetate)/n-Si Schottky diodes (2011) (12)
- Dielectric characterization of BSA doped-PANI interlayered metal–semiconductor structures (2019) (12)
- Investigation of photo-induced effect on electrical properties of Au/PPy/n-Si (MPS) type schottky barrier diodes (2017) (12)
- Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs) (2011) (12)
- The energy density distribution profile of interface traps and their relaxation times and capture cross sections of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors at room temperature (2017) (12)
- Temperature and Voltage Effect on Barrier Height and Ideality Factor in Au/PVC + TCNQ/p‐Si Structures (2014) (12)
- The Investigation of Current-Conduction Mechanisms of Te/NaF:CdS/SnO2 Structure in Wide Temperature Range of 80–400 K (2017) (12)
- The effect of PVP: BaTiO3 interlayer on the conduction mechanism and electrical properties at MPS structures (2021) (12)
- Determination of current transport and trap states density in AlInGaN/GaN heterostructures (2019) (11)
- Structural and electrical characterization of rectifying behavior in n-type/intrinsic ZnO-based homojunctions (2012) (11)
- Gamma-ray irradiation effects on the interface states of MIS structures (2009) (11)
- The Main Electrical and Interfacial Properties of Benzotriazole and Fluorene Based Organic Devices (2013) (11)
- Determining electrical and dielectric parameters of Al/ZnS-PVA/p-Si (MPS) structures in wide range of temperature and voltage (2018) (11)
- Single Gaussian distribution of barrier height in Al/PS–ZnPc/p-Si type Schottky barrier diode in temperature range of 120–320 K (2014) (11)
- Origin of anomalous peak and negative capacitance in the forward bias C-V characteristics of Au/n-InP Schottky Barier Diodes (SBDs) (2009) (11)
- Temperature and Interfacial Layer Effects on the Electrical and Dielectric Properties of Al/(CdS-PVA)/p-Si (MPS) Structures (2018) (10)
- Graphene doped (Bi2Te3–Bi2O3–TeO2): PVP dielectrics in metal–semiconductor structures (2021) (10)
- On the profile of frequency dependent interface states and series resistance in Au/p-InP SBDs prepared with photolithography technique (2012) (10)
- A comparative study on dielectric behaviours of Au/(Zn-doped PVA)/n-4H-SiC (MPS) structures with different interlayer thicknesses using impedance spectroscopy methods (2018) (10)
- Negative dielectric constant and electrical conductivity of Au/n‐Si (111) Schottky barrier diodes with PVA/Ni,Zn interfacial layer (2011) (10)
- Intersection behavior of the current–voltage (I–V) characteristics of the (Au/Ni)/HfAlO3/n-Si (MIS) structure depends on the lighting intensity (2020) (10)
- A comparison study regarding Al/p-Si and Al/(carbon nanofiber–PVP)/p-Si diodes: current/impedance–voltage (I/Z–V) characteristics (2020) (10)
- Dielectric properties, electric modulus and conductivity profiles of Al/Al2O3/p-Si type MOS capacitor in large frequency and bias interval (2021) (10)
- Discrepancies in barrier heights obtained from current–voltage (IV) and capacitance–voltage (CV) of Au/PNoMPhPPy/n-GaAs structures in wide range of temperature (2022) (10)
- The interface states analysis of the MIS structure as a function of frequency (2008) (10)
- Interpretation of barrier height inhomogeneities in Au/In2S3/SnO2/(In-Ga) structures at low temperatures (2017) (9)
- Dielectric Properties of PVP: BaTiO3 Interlayer in the Al/PVP: BaTiO3/P-Si Structure (2021) (9)
- On double exponential forward bias current-voltage (I–V) characteristics of Au/Ca3Co4Ga0.001Ox/n-Si/Au (MIS) type structures in temperature range of 80–340 K (2015) (9)
- Crystal structure and electrical properties of gadolinia doped bismuth oxide nanoceramic powders (2012) (9)
- Investigation of gamma-irradiation effects on electrical characteristics of Al/(ZnO–PVA)/p-Si Schottky diodes using capacitance and conductance measurements (2020) (9)
- The effect of gamma irradiation on electrical and dielectric properties of Al-TiW-Pd2Si/n-Si Schottky diode at room temperature (2012) (9)
- Trapping levels in TlGaSe2 single crystals (2013) (8)
- The reverse bias current–voltage–temperature (I–V–T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80–380 K (2021) (8)
- Frequency Response of C–V and G/ω-V Characteristics of Au/(Nanographite-doped PVP)/n-Si Structures (2020) (8)
- Electrical characteristics of Au/PVP/n-Si structures using admittance measurements between 1 and 500 kHz (2020) (8)
- Effect of (Co–TeO2-doped polyvinylpyrrolidone) organic interlayer on the electrophysical characteristics of Al/p-Si (MS) structures (2021) (8)
- The possible current-conduction mechanism in the Au/(CoSO4-PVP)/n-Si junctions (2020) (8)
- Thermal Annealing Effects on the Electrical and Structural Properties of Ni/Pt Schottky Contacts on the Quaternary AlInGaN Epilayer (2018) (8)
- Investigation of current-voltage characteristics and current conduction mechanisms in composites of polyvinyl alcohol and bismuth oxide (2014) (8)
- The concentration of currents on the artificial surface inhomogeneities of semiconducting cathodes in ionization cells (1999) (7)
- Investigation of the effect of different Bi2O3–x:PVA (x = Sm, Sn, Mo) thin insulator interface-layer materials on diode parameters (2020) (7)
- Illumination effect on I‐V, C‐V and G/w‐V characteristics of AlTiWPd2Si/nSi structures at room temperature (2010) (7)
- A Stable Discharge Glow in Gas Discharge System with Semiconducting Cathode (1997) (7)
- Identification of Current Transport Mechanisms and Temperature Sensing Qualifications for Al/(ZnS-PVA)/p-Si Structures at Low and Moderate Temperatures (2022) (7)
- Electrical and Dielectric Properties of a n-Si Schottky Barrier Diode with Bismuth Titanate Interlayer: Effect of Temperature (2017) (7)
- On the Multi-parallel Diodes Model in Au/PVA/n-GaAs Schottky Diodes and Investigation of Conduction Mechanisms (CMs) in a Temperature Range of 80–360 K (2020) (7)
- Identifying of series resistance and interface states on rhenium/n-GaAs structures using C–V–T and G/ω–V–T characteristics in frequency ranged 50 kHz to 5 MHz (2019) (6)
- Manufacturing and electrical characterization of Al-doped ZnO-coated silicon nanowires (2018) (6)
- Dielectric properties and negative-capacitance/dielectric in Au/n-Si structures with PVC and (PVC:Sm2O3) interlayer (2022) (6)
- Irradiation effect on dielectric properties and electrical conductivity of Au/SiO2/n-Si (MOS) structures (2007) (6)
- Temperature and frequency dependent dielectric properties of Au/Bi4Ti3O12/SiO2/Si (MFIS) structures (2010) (6)
- Preparation and characterization of cross-linked poly (vinyl alcohol)-graphene oxide nanocomposites as an interlayer for Schottky barrier diodes (2018) (6)
- The illumination effects on the current conduction mechanisms of the Au/( <scp> Er <sub>2</sub> O <sub>3</sub> </scp> : <scp>PVC</scp> )/ <scp>n‐Si</scp> ( (2022) (6)
- High Dielectric Performance of Heterojunction Structures Based on Spin-Coated Graphene-PVP Thin Film on Silicon With Gold Contacts for Organic Electronics (2022) (6)
- The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes (2022) (5)
- The effect of radiation on the forward and reverse bias current–voltage (I–V) characteristics of Au/(Bi4Ti3O12/SiO2)/n-Si (MFIS) structures (2020) (5)
- Study on the Reverse Bias Carrier Transport Mechanism in Au/TiO 2 / n -4H-SiC Structure (2016) (5)
- Complex-radical cyclocopolymerization of allyl a-(N-maleimido)acetate with styrene and maleic anhydride (1997) (5)
- Frequency Response of Metal–Semiconductor Structures With Thin-Films Sapphire Interlayer by ALD Technique (2021) (5)
- Current-Voltage (I-V) and Capacitance-Voltage (C-V) Characteristics of Au/Bi4Ti3O12/SnO2 Structures (2007) (5)
- A Comparative Study on the Main Electrical Parameters of Au/ n -Si, Au/Biphenyl-CuPc/ n -Si/ and Au/Biphenylsubs-CoPc/ n -Si/ Type Schottky Barrier Diodes (2016) (4)
- Extraction of the series resistance and interface states in Au/n-Si(111) Schottky barrier diodes (SBDs) with native insulator layer using I-V-T and C-V-T measurement methods (2010) (4)
- A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (Nss) and series resistance (Rs) effects (2022) (4)
- Investigation of Dielectric Properties, Electric Modulus and Conductivity of the Au/Zn-Doped PVA/n-4H-SiC (MPS) Structure Using Impedance Spectroscopy Method (2019) (4)
- The interfacial properties of Au/n-4H-SiC structure with (Zn-doped PVA) interfacial layer (2020) (4)
- The effect of side-chain liquid crystalline concentration in liquid crystal on dielectric properties (2012) (4)
- Controlling the electrical characteristics of Au/n‐Si structure with and without (biphenyl‐CoPc) and (OHSubs‐ZnPc) interfacial layers at room temperature (2017) (3)
- Current-transport mechanism in Au/V-doped PVC+TCNQ/p-Si structures (2015) (3)
- The Impact of Dopant on the Dielectric Properties of Metal-Semiconductor With ZnFe2O4 Doped Organic Polymer Nanocomposites Interlayer (2022) (3)
- The forward bias current density–voltage–temperature (J–V–T) characteristics of Al–SiO2–pSi (MIS) Schottky diodes (2011) (3)
- The effect of insulator layer thickness on the main electrical parameters in (Ni/Au)/AlxGa1−xN/AlN/GaN heterostructures (2010) (3)
- PEI N-doped graphene quantum dots/p-type silicon Schottky diode (2022) (3)
- On the interface states and series resistance profiles of (Ni/Au)–Al0.22Ga0.78N/AlN/GaN heterostructures before and after 60Co (γ-ray) irradiation (2010) (3)
- Investigation of effects on dielectric properties of different doping concentrations of Au/Gr-PVA/p-Si structures at 0.1 and 1 MHz at room temperature (2020) (3)
- Temperature dependence of electrical characteristics and interface state densities of Au/n-type Si structures with SnS doped PVC interface (2022) (3)
- Utilization of Al2O3/PVP nanocomposite as an interfacial layer for Schottky structures (2019) (3)
- Gaussian distribution in current-conduction mechanism of (Ni/Pt) Schottky contacts on wide bandgap AlInGaN quaternary alloy (2018) (3)
- Photoelectrical properties of semiconductor in contact with gas discharge plasma (1997) (3)
- ILLUMINATION DEPENDENT ELECTRICAL CHARACTERISTICS OF PTSI / NSI ( 111 ) SCHOTTKY BARRIER DIODES ( SBDS ) AT ROOM TEMPERATURE (2017) (2)
- Comparison of dielectric characteristics for metal–semiconductor structures fabricated with different interlayers thicknesses (2021) (2)
- Electrical characteristics of Au/n-GaAs structures with thin and thick SiO2 dielectric layer (2011) (2)
- EFFECT OF SURFACE STATES ON ELECTRICAL CHARACTERISTIC OF METAL-INSULATOR-SEMICONDUCTOR(MIS) DIODES (2003) (2)
- Electrical characteristics of Au/PVA (x-doped)/n-Si: Comparison study on the effect of dopant type in PVA (2014) (2)
- DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric (2022) (2)
- All‐Dielectric Fabry–Pérot Cavity Design for Spectrally Selective Mid‐Infrared Absorption (2021) (2)
- The capacitance/conductance and surface state intensity characteristics of the Schottky structures with ruthenium dioxide-doped organic polymer interface (2023) (2)
- A semiconductor photographic system for high-speed measurement (1998) (2)
- On the profile of temperature dependent main electrical parameters in Al/P3HT/p-Si (MPS) structures at low temperatures (2019) (2)
- Two-diode behavior in metal-ferroelectric-semiconductor structures with bismuth titanate interfacial layer (2017) (2)
- Vertical CdTe:PVP/p-Si-Based Temperature Sensor by Using Aluminum Anode Schottky Contact (2022) (2)
- Illumination Effect on Admittance Measurements of Polyvinyl Alcohol (Co, Zn‐Doped)/n‐Si Schottky Barrier Diodes in Wide Frequency and Applied Bias Voltage Range (2011) (1)
- 21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics With a Novel Drive Mode (2022) (1)
- MBE-growth and characterization of InxGa1¡xAs/GaAs (x=0.15) superlattice (2008) (1)
- The effect of frequency and illumination intensity on the main electrical characteristics of Al-TiW-Pd2Si/n-Si structures at room temperature (2010) (1)
- The determination of the temperature and voltage dependence of the main device parameters of Au/7%Gr-doped PVA/n-GaAs-type Schottky Diode (SD) (2020) (1)
- Enhancement of the Sensitivity of an Ionization Type Semiconductor Photographic System (1996) (1)
- The effect of different rates of ultra-thin gossamer-like rGO coatings on photocatalytic performance in ZnO core-shell structures for optoelectronic applications (2022) (1)
- A study of polymer-derived erbia-doped Bi2O3 nanocrystalline ceramic powders (2013) (1)
- On the Anomalous Peak and Negative Capacitance in the Forward-Bias C-V Plot in Al/Mo-doped (PVC+TCNQ)/p-Si (MPS) Capacitors (2016) (1)
- Dielectric properties of $$\hbox {Ag/Ru}_{0.03}$$–PVA/n-Si structures (2019) (1)
- Dielectric properties of Ag/Ru0.03–PVA/n-Si structures (2019) (1)
- The Investigation of Frequency and Voltage Dependence of Electrical Characteristics in Al/P3HT/p-Si (MPS) Structures (2019) (1)
- Frequency dependent electrical and dielectric properties of the Au/(RuO2:PVC)/n-Si (MPS) structures (2023) (0)
- Correction to: Identifying of series resistance and interface states on rhenium/n-GaAs structures using C–V–T and G/ω–V–T characteristics in frequency ranged 50 kHz to 5 MHz (2019) (0)
- N / AlN / GaN heterostructures before and after 60 Co ( γ-ray ) irradiation (2010) (0)
- Influence of Gas Medium on the Sensitivity of an Ionization Type Semiconductor Photographic System (1997) (0)
- Frequency and Voltage Dependence of Dielectric Loss of MgB2 Composites at Different Temperatures (2013) (0)
- Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range (2016) (0)
- A Comparative Study on Electrical Characteristics of Au/n-SiC structure, with and Without Zn-Doped PVA Interfacial Layer at Room Temperature (2016) (0)
- The rapid visualization of resistivity inhomogeneities in high-resistivity semiconductor films (1997) (0)
- The Influence of PVC and (PVC:SnS) Interfacial Polymer Layers on the Electric and Dielectric Properties of Au/n-Si Structure (2022) (0)
- Comparative study of the temperature-dependent dielectric properties of Au/PPy/n-Si (MPS)-type Schottky barrier diodes (2015) (0)
- Photoresponse properties of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode (2021) (0)
- チタン酸ビスマス中間層を有するn‐Siショットキーバリアダイオードの電気的および誘電特性:温度の影響 (2017) (0)
- Coherent infrared image converter based on GaAs and BSO crystals (2001) (0)
- Frequency and Voltage Dependence of Dielectric Loss of MgB2 Composites at Different Temperatures (2012) (0)
- Gaussian distribution of inhomogeneous barrier height in Al/p-GaAs Schottky Barrier Diodes (SBDs) (2015) (0)
- Electrical and dielectric properties and intersection behavior of G/ω-V plots for Al/Co-PVA/p-Si (MPS) structures at temperatures below room temperature (2014) (0)
- Electronic transport of Au//n-Si structures analysed over a wide temperature range (2015) (0)
- Thermal Annealing Effects on the Electrical and Structural Properties of Ni / Pt Schottky Contacts on the Quaternary AlInGaN (2018) (0)
- Negative Capacitance Behavior at Low Frequencies of Nitrogen-Doped Polyethylenimine-Functionalized Graphene Quantum Dots-Based Structure (2023) (0)
- The effect of (CeO2: PVC) thin interfacial film on the electrical features in Au/n-Si Schottky barrier diodes (SBDs) by using current–voltage measurements (2023) (0)
- Effect of radiation stress on C - V and G - V characteristics of Au/SnO 2 /n-Si MIS structure (2002) (0)
- ADSORPTION OF Ni AND ITS INTERACTION WITH CsCl MOLECULES ON THE GRAPHITE MONOLAYER OF IRIDIUM (2003) (0)
- Basic Electrical Parameters of the Au/(Pvc:Ruo2)/N-Si (Mps) Structures as a Function of Frequency (2022) (0)
- The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO2:PVC) interface (2023) (0)
- Design, Fabrication, and Characterization of a Dielectric Multilayer Broadband Infrared Meta-Absorber (2021) (0)
- Analysis Of Formation Of Silicon Nitride On Si(100) By Electrochemical Anodization Technique (2008) (0)
- Illumination Dependent Admittance Characteristics of Au/Zinc Acetate Doped Polyvinyl Alcohol (PVA:Zn)/n‐Si Schottky Barrier Diodes (SBDs) (2011) (0)
- On the investigation of frequency-dependent dielectric features in Schottky barrier diodes (SBDs) with polymer interfacial layer doped by graphene and ZnTiO3 nanostructures (2023) (0)
- Morphological and Structural Properties of Metamaterial Based on ITO/Sapphire/ZnS/Al Superlattice (2019) (0)
- Role of graphene nanoparticles on the electrophysical processes in PVP and PVP: ZnTiO3 polymer layers at Schottky diode (SD) (2023) (0)
- Improvement of electric and photoelectric properties of the Al/n-ZnO/p-Si/Al photodiodes by green synthesis method using chamomille flower extract (2023) (0)
- Investigation of dielectric relaxation and ac conductivity in Au/(carbon nanosheet-PVP composite)/n-Si capacitors using impedance measurements (2023) (0)
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