Shin-ichi Takagi

Shin-ichi Takagi's AcademicInfluence.com Rankings

Shin-ichi Takagi

Engineering

#4172

World Rank

#5344

Historical Rank

Electrical Engineering

#1038

World Rank

#1115

Historical Rank

engineering Degrees

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Engineering

Shin-ichi Takagi's Degrees

PhD Electrical Engineering Stanford University
Masters Electrical Engineering Stanford University
Bachelors Electrical Engineering University of Tokyo

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Shin-ichi Takagi's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration (1994) (1319)
Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors (1996) (440)
Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance (2008) (310)
On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation (1994) (303)
Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation (2008) (285)
Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction (2001) (272)
Experimental study on carrier transport mechanism in ultrathin-body SOI nand p-MOSFETs with SOI thickness less than 5 nm (2002) (256)
Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique (2003) (253)
Bending experiment on pentacene field-effect transistors on plastic films (2005) (205)
Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology (2000) (197)
A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs (2000) (169)
Experimental evidence of inelastic tunneling in stress-induced leakage current (1999) (164)
High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using $\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stacks Fabricated by Plasma Postoxidation (2013) (164)
High-Mobility Ge pMOSFET With 1-nm EOT $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stack Fabricated by Plasma Post Oxidation (2012) (151)
Quantitative understanding of inversion-layer capacitance in Si MOSFET's (1995) (150)
Al2O3/GeOx/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation (2011) (145)
1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density (2012) (135)
A new I-V model for stress-induced leakage current including inelastic tunneling (1999) (135)
Device structures and carrier transport properties of advanced CMOS using high mobility channels (2007) (134)
Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal–oxide–semiconductor field-effect transistors (2003) (128)
Effects of incomplete ionization of impurities in poly-Si gate and band gap narrowing on direct tunneling gate leakage current (2001) (128)
High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain (2005) (116)
Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits (2000) (104)
Control of threshold voltage of organic field-effect transistors with double-gate structures (2005) (104)
High-Performance $\hbox{GeO}_{2}/\hbox{Ge}$ nMOSFETs With Source/Drain Junctions Formed by Gas-Phase Doping (2010) (96)
Efficient low-loss InGaAsP/Si hybrid MOS optical modulator (2017) (95)
Gate dielectric formation and MIS interface characterization on Ge (2007) (94)
Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD) (2005) (92)
Modulation of NiGe∕Ge Schottky barrier height by sulfur segregation during Ni germanidation (2006) (91)
Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation (2009) (91)
Channel structure design, fabrication and carrier transport properties of strained-Si/SiGe-on-insulator (strained-SOI) MOSFETs (2003) (91)
Experimental study on carrier transport mechanisms in double- and single-gate ultrathin-body MOSFETs - Coulomb scattering, volume inversion, and /spl delta/T/sub SOI/-induced scattering (2003) (87)
Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates (2004) (86)
Subband structure engineering for performance enhancement of Si MOSFETs (1997) (86)
Experimental evidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance, and threshold voltage of ultrathin body SOI MOSFETs (2001) (85)
Experimental evidence of inelastic tunneling and new I-V model for stress-induced leakage current (1996) (83)
[110]-surface strained-SOI CMOS devices (2005) (80)
Role of germanium nitride interfacial layers in HfO2/germanium nitride/germanium metal-insulator-semiconductor structures (2007) (79)
Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current (2002) (78)
Temperature effects on Ge condensation by thermal oxidation of SiGe-on-insulator structures (2004) (77)
Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding (2009) (76)
High-performance strained-SOI CMOS devices using thin film SiGe-on-insulator technology (2003) (76)
Dark current reduction of Ge photodetector by GeO₂ surface passivation and gas-phase doping. (2012) (76)
Sub-band structure engineering for advanced CMOS channels (2005) (76)
High mobility CMOS technologies using III-V/Ge channels on Si platform (2012) (74)
1-nm-thick EOT high mobility Ge n- and p-MOSFETs with ultrathin GeOx/Ge MOS interfaces fabricated by plasma post oxidation (2011) (74)
High-mobility strained SiGe-on-insulator pMOSFETs with Ge-rich surface channels fabricated by local condensation technique (2005) (72)
Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films (1997) (71)
Novel Ge waveguide platform on Ge-on-insulator wafer for mid-infrared photonic integrated circuits. (2016) (70)
Influences of buried-oxide interface on inversion-layer mobility in ultra-thin SOI MOSFETs (2002) (69)
Experimental study on electron mobility in ultrathin-body silicon-on-insulator metal-oxide-semiconductor field-effect transistors (2007) (69)
Ultrathin body SiGe-on-insulator pMOSFETs with high-mobility SiGe surface channels (2003) (64)
High Performance 60 nm Gate Length Germanium p-MOSFETs with Ni Germanide Metal Source/Drain (2007) (63)
Effects of alloying additions on corrosion and passivation behaviors of type 304 stainless steel (1995) (62)
Control of threshold-voltage and short-channel effects in ultrathin strained-SOI CMOS devices (2005) (60)
III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface (2010) (59)
Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures (2006) (59)
High Ion/Ioff Ge-source ultrathin body strained-SOI tunnel FETs (2014) (58)
III–V/Ge channel MOS device technologies in nano CMOS era (2015) (58)
High performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas phase doping (2009) (57)
High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and $V_{\rm th}$ Tunability (2014) (56)
Re-examination of subband structure engineering in ultra-short channel MOSFETs under ballistic carrier transport (2003) (55)
Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain (2006) (55)
Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal–Oxide–Semiconductor Field-Effect Transistors Using Ni–InGaAs Alloy (2011) (55)
Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators (2013) (52)
Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers (2011) (52)
Channel direction, effective field, and temperature dependencies of hole mobility in (110)-oriented Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistors fabricated by Ge condensation technique (2011) (52)
Impact of Fermi level pinning inside conduction band on electron mobility of InxGa1−xAs MOSFETs and mobility enhancement by pinning modulation (2011) (51)
High Electron Mobility Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels (2009) (51)
Characterization of inversion-layer capacitance of holes in Si MOSFET's (1999) (50)
Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology (2001) (48)
Device Design and Electron Transport Properties of Uniaxially Strained-SOI Tri-Gate nMOSFETs (2008) (48)
Device design for subthreshold slope and threshold voltage control in sub-100-nm fully depleted SOI MOSFETs (2002) (47)
Extremely-thin-body InGaAs-on-insulator MOSFETs on Si fabricated by direct wafer bonding (2010) (47)
Correlation between two dielectric breakdown mechanisms in ultra‐thin gate oxides (1996) (47)
High-modulation-efficiency InGaAsP/Si hybrid MOS optical modulator with Mach-Zehnder interferometer (2017) (47)
Impact of GeOx interfacial layer thickness on Al2O3/Ge MOS interface properties (2011) (46)
Effects of Si passivation on Ge metal-insulator-semiconductor interface properties and inversion-layer hole mobility (2008) (45)
Enhancement of hot-electron generation rate in Schottky source metal–oxide–semiconductor field-effect transistors (2000) (45)
New materials for post-Si computing: Ge and GeSn devices (2014) (45)
Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation (2012) (44)
Formation process of high-purity Ge-on-insulator layers by Ge-condensation technique (2009) (44)
Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation (2004) (43)
High mobility Ge pMOSFETs with 0.7 nm ultrathin EOT using HfO2/Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation (2012) (42)
III-V/Ge MOS device technologies for low power integrated systems (2016) (42)
Interface-controlled self-align source/drain Ge pMOSFETs using thermally-oxidized GeO2 interfacial layers (2008) (42)
MOS interface and channel engineering for high-mobility Ge/III-V CMOS (2012) (42)
Sulfur passivation of Ge (001) surfaces and its effects on schottky barrier contact (2006) (41)
Formation of III–V-on-insulator structures on Si by direct wafer bonding (2013) (41)
Self-aligned metal source/drain InxGa1−xAs n-MOSFETs using Ni-InGaAs alloy (2010) (41)
High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions (2015) (40)
Strain Engineering of Plasma Dispersion Effect for SiGe Optical Modulators (2012) (40)
Sub-60-nm Extremely Thin Body ${\rm In}_{x}{\rm Ga}_{1-x}{\rm As}$-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability (2013) (40)
High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel FETs with Zn-diffused source junctions (2013) (40)
Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding (2016) (39)
High-Performance Uniaxially Strained SiGe-on-Insulator pMOSFETs Fabricated by Lateral-Strain-Relaxation Technique (2006) (38)
Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties (2012) (38)
High performance strained-Si p-MOSFETs on SiGe-on-insulator substrates fabricated by SIMOX technology (1999) (37)
On the origin of increase in substrate current and impact ionization efficiency in strained-Si n- and p-MOSFETs (2005) (37)
Dislocation-free formation of relaxed SiGe-on-insulator layers (2002) (37)
Relaxed SiGe-on-insulator substrates without thick SiGe buffer layers (2002) (36)
Examination of Additive Mobility Enhancements for Uniaxial Stress Combined with Biaxially Strained Si, Biaxially Strained SiGe and Ge Channel MOSFETs (2007) (36)
High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology (2013) (35)
Low-driving-current InGaAsP photonic-wire optical switches using III–V CMOS photonics platform (2012) (35)
Direct Observation of Interface Charge Behaviors in FeFET by Quasi-Static Split C-V and Hall Techniques: Revealing FeFET Operation (2019) (35)
Dislocation-free relaxed SiGe-on-insulator mesa structures fabricated by high-temperature oxidation (2003) (34)
InGaAsP Photonic Wire Based Ultrasmall Arrayed Waveguide Grating Multiplexer on Si Wafer (2009) (34)
Ge/Si Heterojunction Tunnel Field-Effect Transistors and Their Post Metallization Annealing Effect (2015) (34)
Characterization of platinum germanide/Ge(100) Schottky barrier height for Ge channel Metal Source/Drain MOSFET (2006) (34)
Silicon single-electron tunneling device fabricated in an undulated ultrathin silicon-on-insulator film (2001) (33)
Strain evaluation of strained-Si layers on SiGe by the nano-beam electron diffraction (NBD) method (2005) (32)
[110] strained-SOI n-MOSFETs with higher electron mobility (2003) (32)
The generation of crystal defects in Ge-on-insulator (GOI) layers in the Ge-condensation process (2006) (31)
Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties (2013) (31)
Selectively-formed high mobility SiGe-on-Insulator pMOSFETs with Ge-rich strained surface channels using local condensation technique (2004) (31)
Enhancement technologies and physical understanding of electron mobility in III–V n-MOSFETs with strain and MOS interface buffer engineering (2011) (31)
Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process (2006) (30)
Impact of Plasma Postoxidation Temperature on the Electrical Properties of ${\rm Al}_{2}{\rm O}_{3}/{\rm GeO}_{x}/{\rm Ge}$ pMOSFETs and nMOSFETs (2014) (30)
Strained SOI/SGOI dual-channel CMOS technology based on the Ge condensation technique (2006) (30)
Electron Transport Properties of Ultrathin-body and Tri-gate SOI nMOSFETs with Biaxial and Uniaxial Strain (2006) (30)
Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness (2001) (30)
Capacitance-Voltage Characteristics of p-Si/SiGeC Mos Capacitors (1995) (30)
Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering (2013) (30)
III–V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding (2012) (29)
Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors (2013) (29)
CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding (2011) (29)
Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy (2008) (28)
Surface Nonocrystallization of Carburized Steel JIS-SCr420 by Fine Particle Peening (2006) (28)
Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO2 (2011) (28)
Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETs (2002) (28)
On Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Biaxially Tensile-Strained Si MOSFETs (2009) (28)
Strain analysis in ultrathin SiGe-on-insulator layers formed from strained Si-on-insulator substrates by Ge-condensation process (2007) (28)
Epitaxial lateral overgrowth of InGaAs on SiO2 from (111) Si micro channel areas (2008) (27)
Formation of strained-silicon layer on thin relaxed-SiGe/SiO2/Si structure using SIMOX technology (2000) (27)
High Performance Extremely Thin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates with Ni–InGaAs Metal Source/Drain (2011) (27)
Direct wafer bonding technology for large-scale InGaAs-on-insulator transistors (2014) (27)
Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing (2020) (27)
Hole mobility enhancement of p-MOSFETs using global and local Ge-channel technologies (2006) (27)
High Performance Ultrathin (110)-Oriented Ge-on-Insulator p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated by Ge Condensation Technique (2010) (27)
Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2 (2010) (27)
Observation of Mobility Enhancement in Strained Si and SiGe Tri-Gate MOSFETs with Multi-Nanowire Channels Trimmed by Hydrogen Thermal Etching (2007) (26)
Evaluation of the valence band discontinuity of Si/Si/sub 1-x/Ge/sub x//Si heterostructures by application of admittance spectroscopy to MOS capacitors (1998) (26)
High-performance strained Si-on-insulator MOSFETs by novel fabrication processes utilizing Ge-condensation technique (2002) (26)
Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation (2014) (26)
A Novel Characterization Scheme of $\hbox{Si/SiO}_{2}$ Interface Roughness for Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Unstrained- and Strained-Si MOSFETs (2010) (25)
Experimental study on carrier transport properties in extremely-thin body Ge-on-insulator (GOI) p-MOSFETs with GOI thickness down to 2 nm (2015) (25)
Fabrication of III–V on Insulator Structures on Si Using Microchannel Epitaxy with a Two-Step Growth Technique (2007) (25)
Quantitative evaluation of energy distribution of interface trap density at MoS2 MOS interfaces by the Terman method (2016) (25)
Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain (2012) (25)
InGaAsP Grating Couplers Fabricated Using Complementary-Metal–Oxide–Semiconductor-Compatible III–V-on-Insulator on Si (2013) (25)
Physical Understanding of Strain-Induced Modulation of Gate Oxide Reliability in MOSFETs (2008) (25)
Highly strained-SiGe-on-insulator p-channel metal-oxide-semiconductor field-effective transistors fabricated by applying Ge condensation technique to strained-Si-on-insulator substrates (2011) (25)
Experimental Examination and Physical Understanding of the Coulomb Scattering Mobility in Strained-Si nMOSFETs (2008) (25)
High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics (2020) (24)
High performance CMOS operation of strained-SOI MOSFETs using thin film SiGe-on-insulator substrate (2002) (24)
Interface-Controlled Self-Align Source/Drain Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated Using Thermally Oxidized GeO2 Interfacial Layers (2011) (24)
High performance sub-20-nm-channel-length extremely-thin body InAs-on-insulator tri-gate MOSFETs with high short channel effect immunity and Vth tunability (2013) (24)
Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in $\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As}$ Metal–Oxide–Semiconductor Field Effect Transistors (2013) (24)
Effects on InP surface trap states of in situ etching and phosphorus‐nitride deposition (1987) (24)
Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers (2011) (24)
Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/ Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi2Ta2O9 Films and Ultra-Thin SiN Buffer Layers (2000) (24)
High-speed source-heterojunction-MOS-transistor (SHOT) utilizing high-velocity electron injection (2005) (24)
III–V/Si Hybrid MOS Optical Phase Shifter for Si Photonic Integrated Circuits (2019) (24)
New experimental findings on hot carrier transport under velocity saturation regime in Si MOSFETs (1992) (24)
III–V and Ge/strained SOI tunneling FET technologies for low power LSIs (2015) (23)
(110)-surface strained-SOI CMOS devices with higher carrier mobility (2003) (23)
Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al2O3/Ge structures (2013) (23)
Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistors (2011) (23)
Novel fully-depleted SiGe-on-insulator pMOSFETs with high-mobility SiGe surface channels (2001) (22)
Experimental examination of physical model for direct tunneling current in unstressed/stressed ultrathin gate oxides (1999) (22)
Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces (2012) (22)
Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs (2003) (21)
High mobility Ge pMOSFETs with ∼ 1nm thin EOT using Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation (2011) (21)
Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling (2013) (21)
Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy (2011) (21)
Gas Phase Doping of Arsenic into (100), (110), and (111) Germanium Substrates Using a Metal–Organic Source (2011) (21)
Electron Mobility and Short-Channel Device Characteristics of SOI FinFETs With Uniaxially Strained (110) Channels (2009) (21)
Design for scaled thin film strained-SOI CMOS devices with higher carrier mobility (2002) (21)
Advanced SOI-MOSFETs with strained-Si channel for high speed CMOS-electron/hole mobility enhancement (2000) (21)
Sub-60 nm deeply-scaled channel length extremely-thin body InxGa1−xAs-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D and MOS interface buffer engineering (2012) (21)
Strained-Si-on-Insulator (Strained-SOI) MOSFETs-Concept, Structures and Device Characteristics (2001) (21)
High performance multi-gate pMOSFET using uniaxially-strained SGOI channels (2005) (21)
Characterization of Ni–GaSb Alloys Formed by Direct Reaction of Ni with GaSb (2012) (20)
Fabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces (2010) (20)
Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications (2014) (20)
Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si (2008) (20)
Subband Structure Engineering for Realizing Scaled CMOS with High Performance and Low Power Consumption (2002) (20)
Scaling effects on gate leakage current (2003) (20)
Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors (2014) (20)
Twin-free InGaAs thin layer on Si by multi-step growth using micro-channel selective-area MOVPE (2010) (20)
Performance improvement of InxGa1−xAs Tunnel FETs with Quantum Well and EOT scaling (2016) (19)
Accurate characterization of electron and hole inversion-layer capacitance and its impact on low voltage operation of scaled MOSFETs (1998) (19)
Reduction in Interface Trap Density of Al2O3/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation (2013) (19)
110) Ultrathin GOI layers fabricated by Ge condensation method (2008) (19)
High Electron Mobility Ge n-Channel Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated by the Gate-Last Process with the Solid Source Diffusion Technique (2010) (19)
High velocity electron injection MOSFETs for ballistic transistors using SiGe/strained-Si heterojunction source structures (2004) (19)
Ultrathin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding (2011) (19)
Ultra-power-efficient 2 × 2 Si Mach-Zehnder interferometer optical switch based on III-V/Si hybrid MOS phase shifter. (2018) (19)
Performance enhancement of partially and fully depleted strained-SOI MOSFETs (2005) (18)
Diffusion and Segregation of Carbon in SiO2 Films (1997) (18)
Ge wire MOSFETs fabricated by three-dimensional Ge condensation technique (2008) (18)
Effects of ZrO2/Al2O3 Gate-Stack on the Performance of Planar-Type InGaAs TFET (2019) (18)
High performance InGaAs-on-insulator MOSFETs on Si by novel direct wafer bonding technology applicable to large wafer size Si (2014) (18)
Physical origins of mobility enhancement of Ge p-channel metal-insulator-semiconductor field effect transistors with Si passivation layers (2010) (18)
Impact of electron and hole inversion-layer capacitance on low voltage operation of scaled n- and p-MOSFET's (2000) (18)
Relaxation processes in strained Si layers on silicon-germanium- on-insulator substrates (2005) (18)
Effects of impurity and composition profiles on electrical characteristics of GaAsSb/InGaAs hetero-junction vertical tunnel field effect transistors (2017) (17)
Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process (2014) (17)
Impact of plasma post oxidation temperature on interface trap density and roughness at GeOx/Ge interfaces (2013) (17)
Performance enhancement of partially- and fully-depleted strained-SOI MOSFETs and characterization of strained-Si device parameters (2004) (17)
III-V/Ge CMOS technologies on Si platform (2010) (17)
Spectral shape analysis of infrared absorption of thermally grown silicon dioxide films (1997) (17)
Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS (2004) (17)
Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors (2020) (17)
Ge/III-V Channel Engineering for Future CMOS (2009) (17)
Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation (2015) (17)
Impact of interfacial InAs layers on Al2O3/GaSb metal-oxide-semiconductor interface properties (2015) (17)
A new strained-SOI/GOI dual CMOS technology based on local condensation technique (2005) (17)
High current drive uniaxially-strained SGOI pMOSFETs fabricated by lateral strain relaxation technique (2005) (17)
Analysis and Comparison of L-Valley Transport in GaAs, GaSb, and Ge Ultrathin-Body Ballistic nMOSFETs (2013) (17)
Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance (2012) (17)
Asymmetric Polarization Response of Electrons and Holes in Si FeFETs: Demonstration of Absolute Polarization Hysteresis Loop and Inversion Hole Density over $2\times 10^{13}\mathrm{cm}^{-2}$ (2020) (16)
Impact of La2O3 interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al2O3/La2O3/InGaAs gate stacks deposited by atomic-layer-deposition (2015) (16)
High performance extremely-thin body InAs-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D by contact resistance reduction technology (2013) (16)
Thin-film strained-SOI CMOS Devices-physical mechanisms for reduction of carrier mobility (2004) (16)
Tunneling MOSFET technologies using III-V/Ge materials (2016) (16)
Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors (2010) (16)
Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding (2015) (16)
Effect of gate impurity concentration on inversion-layer mobility in MOSFETs with ultrathin gate oxide layer (2003) (16)
Benchmarking Si, SiGe, and III–V/Si Hybrid SIS Optical Modulators for Datacenter Applications (2017) (16)
Sb-Doped S/D Ultrathin Body Ge-On Insulator nMOSFET Fabricated by Improved Ge Condensation Process (2014) (16)
AC response analysis of C-V curves and quantitative analysis of conductance curves in Al2O3/InP interfaces (2011) (16)
Correlation between channel mobility improvements and negative Vth shifts in III–V MISFETs: Dipole fluctuation as new scattering mechanism (2010) (16)
Observation of oxide-thickness-dependent interface roughness in Si MOS structure (1996) (16)
Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation (2016) (16)
High mobility strained-Ge pMOSFETs with 0.7-nm ultrathin EOT using plasma post oxidation HfO2/Al2O3/GeOx gate stacks and strain modulation (2013) (16)
Novel SOI p-channel MOSFETs with higher strain in si channel using double SiGe heterostructures (2002) (16)
A Ge Ultrathin-Body n-Channel Tunnel FET: Effects of Surface Orientation (2014) (16)
Suppression of dark current in GeOx-passivated germanium metal-semiconductor-metal photodetector by plasma post-oxidation. (2015) (16)
Prospective and Critical Issues of III-V/Ge CMOS on Si Platform (2011) (15)
Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuations in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors (2006) (15)
Heterogeneous CMOS Photonics Based on SiGe/Ge and III–V Semiconductors Integrated on Si Platform (2017) (15)
Impact of Channel Orientation on Electrical Properties of Ge p- and n-MOSFETs With 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks Fabricated by Plasma Postoxidation (2014) (15)
Numerical Analysis of Carrier-Depletion Strained SiGe Optical Modulators With Vertical p-n Junction (2015) (15)
InGaAs MSM photodetector monolithically integrated with InP photonic-wire waveguide on III-V CMOS photonics platform (2014) (15)
SiGe source/drain structure for the suppression of the short-channel effect of sub-0.1-/spl mu/m p-channel MOSFETs (2001) (14)
Impact of La2O3/InGaAs MOS interface on InGaAs MOSFET performance and its application to InGaAs negative capacitance FET (2016) (14)
Carrier transport properties of thin gate oxides after soft and hard breakdown (2001) (14)
Planar defect formation mechanism in Ge-rich SiGe-on-insulator substrates during Ge condensation process (2008) (14)
In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys (2012) (14)
Different Contribution of Interface States and Substrate Impurities to Coulomb Scattering in Si MOS Inversion Layer (1994) (14)
Extraction of interface state density at SiO2/SiC interfaces based on impedance measurements with different temperatures (2014) (14)
Characterization of ultrathin-body Germanium-on-insulator (GeOI) structures and MOSFETs on flipped Smart-Cut™ GeOI substrates (2016) (14)
Importance of minority carrier response in accurate characterization of Ge metal-insulator-semiconductor interface traps (2009) (14)
Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process (2019) (14)
Si microring resonator crossbar array for on-chip inference and training of optical neural network (2021) (14)
Nature of interface traps in Ge metal-insulator-semiconductor structures with GeO2 interfacial layers (2011) (14)
Extremely high modulation efficiency IU-V/Si hybrid MOS optical modulator fabricated by direct wafer bonding (2016) (13)
Biaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility (2013) (13)
First demonstration of SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect. (2016) (13)
Device Design of High–Speed Source–Heterojunction–MOS Transistors (SHOTs): Optimization of Source Band Offset and Graded Heterojunction (2007) (13)
Comprehensive understanding of surface roughness and Coulomb scattering mobility in biaxially-strained Si MOSFETs (2008) (13)
Effect of Tensile Strain on Gate Current of Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors (2007) (13)
Si microring resonator crossbar arrays for deep learning accelerator (2020) (13)
Impact of Strained-Si Channel on Complementary Metal Oxide Semiconductor Circuit Performance under the Sub-100 nm Regime (2001) (13)
Surface Leakage Reduction in MSM InGaAs Photodetector on III–V CMOS Photonics Platform (2015) (12)
Tunable Grating Coupler by Thermal Actuation and Thermo-Optic Effect (2018) (12)
A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate (2018) (12)
Quantitative evaluation of slow traps near Ge MOS interfaces by using time response of MOS capacitance (2014) (12)
Optical Phase Modulators Based on Reverse-Biased III-V/Si Hybrid Metal-Oxide-Semiconductor Capacitors (2020) (12)
Design and characterization of Ge passive waveguide components on Ge-on-insulator wafer for mid-infrared photonics (2016) (12)
Strained extremely-thin body In0.53Ga0.47As-on-insulator MOSFETs on Si substrates (2013) (12)
High mobility channel MOS device technologies toward nano-CMOS era (2011) (12)
Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys (2014) (12)
Accurate evaluation of Ge metal—insulator—semiconductor interface properties (2011) (12)
Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs (2015) (12)
Bilayer tunneling field effect transistor with oxide-semiconductor and group-IV semiconductor hetero junction: Simulation analysis of electrical characteristics (2019) (12)
III–V single structure CMOS by using ultrathin body InAs/GaSb-OI channels on Si (2014) (12)
Ion-Implanted Impurity Profiles in Ge Substrates and Amorphous Layer Thickness Formed by Ion Implantation (2009) (12)
(Invited) III-V/Ge CMOS Device Technologies for High Performance Logic Applications (2013) (11)
Formation of Thin Germanium Dioxide Film with a High-Quality Interface Using a Direct Neutral Beam Oxidation Process (2012) (11)
Device simulation of surface quantization effect on MOSFETs with simplified density-gradient method (2002) (11)
TiN/Al2O3/ZnO gate stack engineering for top-gate thin film transistors by combination of post oxidation and annealing (2018) (11)
Analysis of an ONO gate film effect on n- and p-MOSFET mobilities (1990) (11)
Structural analyses of strained SiGe wires formed by hydrogen thermal etching and Ge-condensation processes (2009) (11)
Ultrasmall arrayed waveguide grating multiplexer using InP-based photonic wire waveguide on Si wafer for III-V CMOS photonics (2010) (11)
Ge p-channel tunneling FETs with steep phosphorus profile source junctions (2017) (11)
Effects of HfO2/Al2O3 gate stacks on electrical performance of planar InxGa1−xAs tunneling field-effect transistors (2017) (11)
Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing (2013) (11)
Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeOx Interfacial Layers Formed by Plasma Pre-Oxidation (2018) (11)
Impact of Postdeposition Annealing Ambient on the Mobility of Ge nMOSFETs With 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks (2016) (11)
Experimental evidence of valence band deformation due to strain in inverted hole channel of strained-Si pMOSFETs (2000) (10)
Physical mechanism for high hole mobility in [110]-surface strained- and unstrained-MOSFETs (2003) (10)
Analysis of interface trap density of plasma post-nitrided Al2O3/SiGe MOS interface with high Ge content using high-temperature conductance method (2016) (10)
Ge-rich SiGe-on-insulator for waveguide optical modulator application fabricated by Ge condensation and SiGe regrowth. (2013) (10)
InP-based photonic integrated circuit platform on SiC wafer. (2017) (10)
Design and properties of planar-type tunnel FETs using In0.53Ga0.47As/InxGa1-xAs/In0.53Ga0.47As quantum well (2017) (10)
Strained-Si CMOS Technology (2007) (10)
High-quality germanium dioxide thin films with low interface state density using a direct neutral beam oxidation process (2012) (10)
Kinetics of epitaxial growth of Si and SiGe films on (1 1 0) Si substrates (2004) (10)
Single Source Heterojunction Metal–Oxide–Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low Temperature (2011) (10)
Strategy Toward HZO BEOL-FeRAM with Low-Voltage Operation (≤ 1.2 V), Low Process Temperature, and High Endurance by Thickness Scaling (2021) (10)
Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method (2019) (10)
High mobility metal S/D III–V-On-Insulator MOSFETs on a Si substrate using direct wafer bonding (2006) (10)
Initial growth of InAs on P-terminated Si(1 1 1) surfaces to promote uniform lateral growth of InGaAs micro-discs on patterned Si (2010) (10)
Comprehensive Understanding of Coulomb Scattering Mobility in Biaxially Strained-Si pMOSFETs (2009) (10)
Investigation of Electrical Characteristics of Vertical Junction Si n-Type Tunnel FET (2018) (10)
Tunneling FET device technologies using III-V and Ge materials (2015) (10)
High hole mobility front-gate InAs/InGaSb-OI single structure CMOS on Si (2015) (10)
High mobility III–V-on-insulator MOSFETs on Si with ALD-Al2O3 BOX layers (2010) (9)
High performance extremely-thin body III-V-on-insulator MOSFETs on a Si substrate with Ni-InGaAs metal S/D and MOS interface buffer engineering (2011) (9)
Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer (2004) (9)
{110}-facets formation by hydrogen thermal etching on sidewalls of Si and strained-Si fin structures (2008) (9)
Evaluation of Mobility Degradation Factors and Performance Improvement of Ultrathin-Body Germanium-on-Insulator MOSFETs by GOI Thinning Using Plasma Oxidation (2017) (9)
Electrical characteristic of atomic layer deposition La2O3/Si MOSFETs with ferroelectric-type hysteresis (2019) (9)
Modeling of screening effect on remote Coulomb scattering due to gate impurities by nonuniform free carriers in poly-Si gate (2007) (9)
InGaAsP Mach-Zehnder interferometer optical modulator monolithically integrated with InGaAs driver MOSFET on a III-V CMOS photonics platform. (2018) (9)
Self-aligned metal S/D GaSb p-MOSFETs using Ni-GaSb alloys (2012) (9)
ZnO/Si and ZnO/Ge bilayer tunneling field effect transistors: Experimental characterization of electrical properties (2019) (9)
Strained-Si- and SiGe-on-insulator (strained-SOI and SGOI) MOSFETs for high performance/low power CMOS application (2002) (9)
p-Channel TFET Operation of Bilayer Structures With Type-II Heterotunneling Junction of Oxide- and Group-IV Semiconductors (2020) (9)
Proposal and Experimental Demonstration of Reservoir Computing using Hf0.5Zr0.5O2/Si FeFETs for Neuromorphic Applications (2020) (9)
Study on void reduction in direct wafer bonding using Al2O3/HfO2 bonding interface for high-performance Si high-k MOS optical modulators (2016) (9)
Reduction in threshold voltage fluctuation in fully-depleted SOI MOSFETs with back gate control (2004) (9)
Ultrathin body germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III–V substrates (2014) (9)
New Findings on Coulomb Scattering Mobility in Strained-Si nFETs and its Physical Understanding (2007) (9)
Impact of Ge nitride interfacial layers on performance of metal gate/high-k Ge-nMISFETs (2010) (9)
Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors (2018) (9)
Metal–oxide–semiconductor interface properties of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature post-metallization annealing (2020) (8)
Interfacial Control and Electrical Properties of Ge MOS structures (2009) (8)
Uniformity improvement of selectively-grown InGaAs micro-discs on Si (2012) (8)
MOS Interfacial Studies Using Hall Measurement and Split C-V Measurement in n-Channel Carbon-Face 4H-SiC MOSFET (2014) (8)
Impact of La2O3/InGaAs MOS Interfaces on the Performance of InGaAs MOSFETs (2017) (8)
Computational design of efficient grating couplers using artificial intelligence (2020) (8)
Low-dark-current waveguide InGaAs metal–semiconductor–metal photodetector monolithically integrated with InP grating coupler on III–V CMOS photonics platform (2016) (8)
Effective mobility of electrons in surface layer of semi‐insulating and p‐type InP substrates (1987) (8)
Low resistivity lateral P–I–N junction formed by Ni–InGaAsP alloy for carrier injection InGaAsP photonic devices (2015) (8)
Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory. (2022) (8)
High-performance (110)-surface strained-SOI MOSFETs (2005) (8)
Ge photodetector monolithically integrated with amorphous Si waveguide on wafer-bonded Ge-on-insulator substrate. (2018) (8)
The formation of SGOI structures with low dislocation density by a two-step oxidation and condensation method (2006) (8)
Improvement of Rolling Contact Fatigue by DLC Coating (2006) (8)
Origin of electron mobility enhancement in (111)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors (2011) (8)
Quantitative Evaluation of Interface Trap Density in Ge-MIS Interfaces (2006) (8)
Energy-Efficient Reliable HZO FeFET Computation-in-Memory with Local Multiply & Global Accumulate Array for Source-Follower & Charge-Sharing Voltage Sensing (2021) (8)
Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C–V Measurement (2016) (8)
Reservoir computing on a silicon platform with a ferroelectric field-effect transistor (2022) (8)
Effects of buffered HF cleaning on metal–oxide–semiconductor interface properties of Al2O3/InAs/GaSb structures (2015) (7)
Demonstration of record-low injection-current variable optical attenuator based on strained SiGe with optimized lateral pin junction. (2015) (7)
High Quality Thin Body III-V-On-Insulator Channel Layer Transfer on Si Wafer Using Direct Wafer Bonding (2010) (7)
Fabrication of a strained is on sub-10-nm-thick SiGe-on-insulator virtual substrate (2002) (7)
Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors (2014) (7)
Effects of Interfacial Layers Formed by Plasma Oxidation and Nitridation on HfO2/Ge-MIS Properties (2006) (7)
Two-dimensional Carrier Transport in Si MOSFETs (1998) (7)
Characterization and understanding of slow traps in GeOx-based n-Ge MOS interfaces (2018) (7)
Performance enhancement of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical tunneling field-effect transistors with abrupt source impurity profile (2019) (7)
Physical Origin of Drive Current Enhancement in Ultrathin Ge-on-Insulator n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Full Ballistic Transport (2011) (7)
New findings on inversion-layer mobility in highly doped channel Si MOSFETs (2005) (7)
Operation of (111) Ge-on-Insulator n-Channel MOSFET Fabricated by Smart-Cut Technology (2020) (7)
Observation of anisotropic impact ionization in Si MOSFET (1992) (7)
Experimental Determination of Shear Stress induced Electron Mobility Enhancements in Si and Biaxially Strained-Si Metal–Oxide–Semiconductor Field-Effect Transistors (2010) (7)
Fabrication of thin body InAs-on-insulator structures by Smart Cut method with H+ implantation at room temperature (2019) (7)
SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge-Condensation Technique for High-Mobility Channel CMOS Devices (2004) (7)
Impact of surface orientation on (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and on their Al2O3/InGaAs metal-oxide-semiconductor interface properties (2016) (7)
Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment (2017) (7)
Strain evaluation for thin strained-Si on SGOI and strained-Si on nothing (SSON) structures using nano-beam electron diffraction (NBD) (2003) (7)
Formation of Nanocrystalline Structure by Fine Particle Bomberding( Surface Modification by FPB Treatment and Its Application) (2006) (7)
Reduction of slow trap density of Al2O3/GeOx/n-Ge MOS interfaces by inserting ultrathin Y2O3 interfacial layers (2017) (7)
Operation of the GaSb p-channel metal-oxide-semiconductor field-effect transistors fabricated on (111)A surfaces (2014) (7)
Evaluation of SiO2/GeO2/Ge MIS Interface Properties by Low Temperature Conductance Method (2007) (7)
Ultrathin Ge-on-Insulator Metal Source/Drain p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated By Low-Temperature Molecular-Beam Epitaxy (2007) (6)
Ion-Implanted B Concentration Profiles in Ge (2007) (6)
Source engineering for bilayer tunnel field-effect transistor with hetero tunnel junction: thickness and impurity concentration (2020) (6)
Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance (1999) (6)
Monolithic integration of InGaAsP MZI modulator and InGaAs driver MOSFET using III-V CMOS photonics (2017) (6)
ALD Al2O3 activated direct wafer bonding for III–V CMOS photonics platform (2011) (6)
Strain relaxation in strained-Si layers on SiGe-on-insulator substrates (2006) (6)
Effects of additional oxidation after Ge condensation on electrical properties of germanium-on-insulator p-channel MOSFETs (2016) (6)
Study of the Surface Cleaning of GOI and SGOI Substrates for Ge Epitaxial Growth (2006) (6)
Critical Factors for Enhancement of Compressive Strain in SGOI Layers Fabricated by Ge Condensation Technique (2010) (6)
Ge-on-insulator tunneling FET with abrupt source junction formed by utilizing snowplow effect of NiGe (2018) (6)
MOS interface engineering for high-mobility Ge CMOS (2013) (6)
High performance 4.5-nm-thick compressively-strained Ge-on-insulator pMOSFETs fabricated by Ge condensation with optimized temperature control (2017) (6)
Low temperature Al2O3 surface passivation for carrier-injection SiGe optical modulator. (2014) (6)
Fabrication and Electrical Characteristics of ZnSnO/Si Bilayer Tunneling Filed-Effect Transistors (2019) (6)
Comparative Study on Influence of Subband Structures on Electrical Characteristics of III-V Semiconductor, Ge and Si Channel n-MISFETs (2006) (6)
Evaluation of Electron and Hole Mobility at Identical Metal–Oxide–Semiconductor Interfaces by using Metal Source/Drain Ge-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors (2009) (6)
Modulation of sub-threshold properties of InGaAs MOSFETs by La2O3 gate dielectrics (2017) (6)
Si racetrack optical modulator based on the III-V/Si hybrid MOS capacitor. (2021) (6)
InAs/GaSb-on-insulator single channel complementary metal-oxide-semiconductor transistors on Si structure (2016) (6)
Ge/III-V MOS device technologies for low power integrated systems (2015) (6)
High-efficiency Ge thermo-optic phase shifter on Ge-on-insulator platform. (2019) (6)
Mid-infrared tunable Vernier filter on a germanium-on-insulator photonic platform (2019) (6)
Physical Understanding of Strain Effects on Gate Oxide Reliability of MOSFETs (2007) (6)
(Invited) III-V/Ge MOS Transistor Technologies for Future ULSI (2013) (6)
Effects of Surface Orientation on the Universality of Inversion-Layer Mobility in Si MOSFETs (1990) (6)
Effect of Oxygen Content on Microstructure and Mechanical Properties of Cast and HIP'ed γ TiAl Alloys (1997) (5)
Simulation of planar single-gate Si tunnel FET with average subthreshold swing of less than 60 mV/decade for 0.3 V operation (2018) (5)
III–V MOS device technologies for advanced CMOS and tunneling FET (2016) (5)
Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in Metal Oxide Semiconductor Field Effect Transistors with N2O and NO Oxynitrides (2001) (5)
Silicon–germanium (SiGe)-based field effect transistors (FET) and complementary metal oxide semiconductor (CMOS) technologies (2011) (5)
Variation of Threshold Voltage in Strained Si Metal–Oxide–Semiconductor Field-Effect Transistors Induced by Non-uniform Strain Distribution in Strained-Si Channels on Silicon–Germanium-on-Insulator Substrates (2008) (5)
Improvement of SiGe MOS interface properties with a wide range of Ge contents by using TiN/Y2O3 gate stacks with TMA nassivation (2019) (5)
Low-loss graphene-based optical phase modulator operating at mid-infrared wavelength (2018) (5)
Effects of Alloying Elements and Heat Treatment on the Strength and Ductility of Cast-Hipped TiAl (1994) (5)
Ultra Thin Nitride Gate MISFET Operating with Tunneling Gate Current (1990) (5)
Taperless Si hybrid optical phase shifter based on a metal-oxide-semiconductor capacitor using an ultrathin InP membrane. (2020) (5)
Ge Diffusion Effect on Low Frequency Noise in Ultra-thin Strained-SOI CMOS (5)
Sulfur cleaning for (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and their Al2O3/InGaAs MOS interface properties (2012) (5)
New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon (1999) (5)
High Mobility Fully-Depleted Germanium-on-Insulator pMOSFET with 32-nm-Thick Ge Channel Layer Formed by Ge-Condensation Technique (2005) (5)
Fabrication and evaluation of propagation loss of Si/SiGe/Si photonic-wire waveguides for Si based optical modulator (2014) (5)
Low Parasitic Capacitance III-V/Si Hybrid MOS Optical Modulator toward High-speed Modulation (2020) (5)
Investigation of InAlAs Oxide/InP Metal–Oxide–Semiconductor Structures Formed by Wet Thermal Oxidation (2009) (5)
Misfit strain relaxation in strained-Si layers on silicon-germanium-on-insulator substrates (2006) (5)
InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding (2019) (5)
Device characterizations and physical models of strained-Si channel CMOS (2004) (5)
Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation (2016) (5)
Taper-Less III-V/Si Hybrid MOS Optical Phase Shifter using Ultrathin InP Membrane (2020) (5)
Improvement in Electrical Characteristics of ZnSnO/Si Bilayer TFET by W/Al₂O₃ Gate Stack (2020) (4)
Relationship Between Hole Mobility and Current Drive Enhancement in Uniaxially Strained Thin-Body SiGe-on-Insulator pMOSFETs (2006) (4)
SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect in strained SiGe (2015) (4)
Control of threshold voltage and short channel effects in ultra-thin strained-SOI CMOS (2003) (4)
Understanding of slow traps generation in plasma oxidation GeOx/Ge MOS interfaces with ALD high-k layers (2017) (4)
Physical origins of mobility enhancement of Ge pMISFETs with Si passivation layers (2006) (4)
Accurate evaluation of specific contact resistivity between InAs/Ni–InAs alloy using a multi-sidewall transmission line method (2020) (4)
Reduction in Interface Trap Density of Al (2013) (4)
Mechanical Stress Induced Threshold Voltage Shifts for Nitrided Oxide Gate n- and p- MOSFETs (1990) (4)
Analysis of Microstructures in SiGe Buffer Layers on Silicon-on-Insulator Substrates (2005) (4)
Foreword Special Issue on Simulation and Modeling of Nanoelectronics Devices (2007) (4)
Evaluation of interface state density of strained-Si metal-oxide-semiconductor interfaces by conductance method (2014) (4)
InGaAsP variable optical attenuator with lateral P-I-N junction formed by Ni-InGaAsP and Zn diffusion on III-V on insulator wafer (2016) (4)
Demonstration of Classification Task Using Optical Neural Network Based on Si Microring Resonator Crossbar Array (2020) (4)
Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach (2022) (4)
Effects of annealing gas and drain doping concentration on electrical properties of Ge-source/Si-channel heterojunction tunneling FETs (2018) (4)
Drive current enhancement of Si MOSFETs by using anti-ferroelectric gate insulators (2019) (4)
Carrier-transport-enhanced CMOS using new channel materials and structures (2007) (4)
III–V/Ge MOSFETs and TFETs for ultra-low power logic LSIs (2017) (4)
Characterization of anisotropic relaxation rate of SGOI (110) substrates (2008) (4)
Influence of interface traps inside the conduction band on the capacitance–voltage characteristics of InGaAs metal–oxide–semiconductor capacitors (2016) (4)
Effects of Depleted Poly-Si Gate on MOSFET Performance (1990) (4)
Strain-Modulated L-Valley Ballistic-Transport in (111) GaAs Ultrathin-Body nMOSFETs (2014) (4)
Effect of Ge Metal–Insulator–Semiconductor Interfacial Layers on Interface Trap Density near the Conduction Band Edge (2010) (4)
Impact of Al2O3 ALD temperature on Al2O3/GaSb metal-oxide-semiconductor interface properties (2013) (4)
Determination of deformation potential constant of the conduction band in Si from electron heating experiments on Si metal-oxide-semiconductor field-effect transistors (2007) (4)
Efficient Mid-Infrared Germanium Variable Optical Attenuator Fabricated by Spin-on-Glass Doping (2020) (4)
Reduction of Slow Trap Density in Al2O3/GeOxNy/n-Ge MOS Interfaces by PPN-PPO Process (2019) (4)
III–V/Ge MOSFETs and tunneling FETs on Si platform for low power logic applications (2015) (4)
Pretreatment Effects on High-k/InxGa1–xAs MOS Interface Properties and Their Physical Model (2018) (4)
Analysis of growth rate during Si epitaxy by hydrogen coverage model (2005) (4)
Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation (2014) (4)
Novel Anisotropic Strain Engineering on (110)-Surface SOI CMOS Devices using Combination of Local/Global Strain Techniques (2006) (4)
Antiferroelectric properties of ZrO2 ultra-thin films prepared by atomic layer deposition (2021) (4)
Ultra-thin strained-SOI CMOS for high temperature operation (2003) (4)
Low-crosstalk 2 × 2 InGaAsP Photonic-wire Optical Switches using III-V CMOS Photonics Platform (2013) (4)
Proposal and Experimental Demonstration of Ultrathin-Body (111) InAs-On-Insulator nMOSFETs With L Valley Conduction (2021) (4)
(Invited) MOS Interface Control Technologies for III-V/Ge Channel MOSFETs (2011) (4)
Efficient Optical Modulator by Reverse-Biased III-V/Si Hybrid MOS Capacitor Based on FK Effect and Carrier Depletion (2019) (4)
Mobility enhancement techniques for Ge and GeSn MOSFETs (2021) (4)
Influence of layer transfer and thermal annealing on the properties of InAs-On-Insulator films (2020) (3)
Experimental Evaluation of Coulomb-Scattering-Limited Inversion-Layer Mobility of n-type Metal–Oxide–Semiconductor Field-Effect Transistors on Si(100), (110), and (111)-Surfaces: Impact of Correlation between Conductivity Mass and Normal Mass (2010) (3)
Low-loss Ge waveguide at 2-μm band on n-type Ge-on-insulator wafer (2021) (3)
Feasibility study of III-V/Si hybrid MOS optical modulators consisting of n-InGaAsP/Al3O3/p-Si MOS capacitor formed by wafer bonding (2016) (3)
Effect of III–V on insulator structure on quantum well intermixing (2016) (3)
Low-crosstalk, Low-power Mach-Zehnder Interferometer Optical Switch Based on III-V/Si Hybrid MOS Phase Shifter (2018) (3)
Interface Analysis of Al2O3/InP Structure Prepared by Molecular Beam Deposition (1987) (3)
Hole-Mobility Enhancement in Ge-Rich Strained SiGe-on-Insulator pMOSFETs at High Temperatures (2007) (3)
Performance enhancement of Ge-on-Insulator tunneling FETs with source junctions formed by low-energy BF2 ion implantation (2018) (3)
Limiting Factors of Channel Mobility in III-V/Ge MOSFETs (2013) (3)
Strained-SOI Technology for High-Speed CMOS Operation (2006) (3)
Impact of Switching Voltage on Complementary Steep-Slope Tunnel Field Effect Transistor Circuits (2020) (3)
Effects of Impurity and Composition Profile Steepness on Electrical Characteristics of GaAsSb/InGaAs Hetero-junction Vertical TFETs (2016) (3)
Propagation-Loss Reduction in InGaAsP Photonic- wire Waveguides by InP and Al2O3 Passivation Layers (2012) (3)
Controlling Anion Composition at Metal–Insulator–Semiconductor Interfaces on III–V Channels by Plasma Processing (2012) (3)
Understanding and engineering of carrier transport in advanced MOS channels (2008) (3)
III–V-based low power CMOS devices on Si platform (2017) (3)
Physical Origin of Drive Current Enhancement in Ultra-thin Ge-On-Insulator (GOI) MOSFETs under Full Ballistic Transport (2004) (3)
Tunable Germanium-on-Insulator Band-Stop Optical Filter Using Thermo-Optic Effect (2020) (3)
(Invited) Ultrathin-Body Ge-on-Insulator MOSFET and TFET Technologies (2018) (3)
Two-layer integrated photonic architectures with multiport photodetectors for high-fidelity and energy-efficient matrix multiplications. (2022) (3)
Scalable TaN metal source/drain & gate InGaAs/Ge n/pMOSFETs (2011) (3)
Evaluation of chemical potential for graphene optical modulators based on the semiconductor-metal transition (2013) (3)
Keynote; Material Challenges and Opportunities in Ge/III-V Channel MOSFETs (2014) (3)
Interface state generation of Al2O3/InGaAs MOS structures by electrical stress (2017) (3)
Advanced nano CMOS using Ge/III–V semiconductors for low power logic LSIs (2015) (3)
Dependences of Initial Nucleation on Growth Conditions of InAs on Si by Micro-Channel Selective-Area Metal–Organic Vapor Phase Epitaxy (2010) (3)
Novel Fabrication Technique for Relaxed SiGe-on-Insulator Substrates without Thick SiGe Buffer Structures (2001) (3)
Relationships between Interface Structures and Electrical Properties in the High-k/III–V System (2009) (3)
High Mobility Ge-Based CMOS Device Technologies (2011) (3)
Reduction of MOS Interface Defects in TiN/Y₂O₃/Si₀.₇₈Ge₀.₂₂ Structures by Trimethylaluminum Treatment (2020) (3)
Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO 2 (2010) (3)
On the mechanisms limiting mobility in InP/InGaAs buried channel nMISFETs (2011) (3)
High mobility channel CMOS technologies for realizing high performance LSI's (2009) (3)
Suppression of Interface State Generation in Si MOSFETs with Biaxial Tensile Strain (2011) (3)
Investigation of optical loss and bandwidth of InP-organic hybrid optical modulator (2019) (3)
Effective Mobility Enhancement Through Asymmetric Strain Channels on Extremely Thin Body (100) GOI pMOSFETs (2022) (3)
High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal–Organic Vapor Phase Epitaxy (2011) (3)
(Invited) HfZrO-Based Ferroelectric Devices for Lower Power AI and Memory Applications (2021) (2)
Ge Condensation Technologies for Advanced MOSFETs on SGOI and GOI Substrates (2006) (2)
(Invited) Low Power Tunneling FET Technologies Using Ge/III-V Materials (2017) (2)
Observation of Oxide Thickness Dependent Interface Roughness in Si MOS Structure (1995) (2)
High-efficiency O-band Mach-Zehnder modulator based on InGaAsP/Si hybrid MOS capacitor (2017) (2)
Evidence for Asymmetrical Hydrogen Profile in Thin D2O Oxidized SiO2 by SIMS and Modified TDS (1996) (2)
(Invited) High Performance III-V-on-Insulator MOSFETs on Si Realized by Direct Wafer Bonding Applicable to Large Wafer Size (2015) (2)
Record-low Injection-current Strained SiGe variable optical attenuator with optimized lateral PIN junction (2014) (2)
Fabrication of III-V-O-I (III-V on Insulator) structures on Si using micro-channel epitaxy with a two-step growth technique (2006) (2)
III-V/Si hybrid optical modulators based on MOS capacitor (2020) (2)
Thermal properties of III–V on a SiC platform for photonic integrated circuits (2019) (2)
Optimized design of the subband structure in mos inversion layers for realizing high performance and low power Si MOSFETs (2000) (2)
Mid-infrared Non-volatile Compact Optical Phase Shifter Based on Ge2Sb2 Te5 (2020) (2)
Effect of sulfur treatment on HfO 2 /InGaAs MOS interfaces properties (2011) (2)
Monolithic Germanium PIN Waveguide Photodetector Operating at 2 µm Wavelengths (2020) (2)
Comprehensive understanding of surface roughness limited mobility in unstrained- and strained-Si MOSFETs by novel characterization scheme of Si/SiO2 interface roughness (2006) (2)
Waveguide InGaAs MSM Photodetector for Chip-Scale Optical Interconnects on III-V CMOS Photonics Platform (2013) (2)
Evidence of Layer-by-Layer Oxidation of Ge Surfaces by Plasma Oxidation Through Al2O3 (2013) (2)
Strained-Si/SiGe-on-insulator wafers fabricated by Ge-condensation process (2004) (2)
Formation of 1.7-nm-thick-EOT Germanium Dioxide Film with a High-Quality Interface Using a Direct Neutral Beam Oxidation Process (2013) (2)
Gate voltage dependent model for TDDB lifetime prediction under direct tunneling regime (2001) (2)
In content dependence of pre-treatment effects on Al2O3/InxGa1−xAs MOS interface properties (2017) (2)
Prospects and Critical Issues on Ge MOS Technologies (2006) (2)
High-efficiency, Low-loss Optical Phase Modulator based on III-V/Si Hybrid MOS Capacitor (2018) (2)
Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide MOSFETs with Direct Tunneling Current (2001) (2)
Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on (110) Si (2013) (2)
High mobility material channel CMOS technologies based on heterogeneous integration (2011) (2)
Subband Engineering by Combination of Channel Thickness Scaling and (111) Surface Orientation in InAs-On-Insulator nMOSFETs (2020) (2)
Improvement of SiGe MOS interfaces by plasma post-nitridation for SiGe high-k MOS optical modulators (2012) (2)
Impacts of Equivalent Oxide Thickness Scaling of TiN/Y₂O₃ Gate Stacks With Trimethylaluminum Treatment on SiGe MOS Interface Properties (2021) (2)
Ultra-small, low-crosstalk, electrically-driven InGaAsP photonic-wire optical switches on III–V CMOS photonics platform (2014) (2)
Formation Mechanism of Ge-on-Insulator Layers by Ge-condensation Technique (2)
III-V-semiconductor-on-insulator MISFETs on Si with buried SiO2 and Al2O3 layers by direct wafer bonding (2010) (2)
Dark current suppression for germanium metal-semiconductor-metal photodetector by plasma post-oxidation passivation (2013) (2)
Modulation bandwidth improvement of III-V/Si hybrid MOS optical modulator by reducing parasitic capacitance. (2022) (2)
Active-Passive Integration on III-V-OI Platform using Quantum Well Intermixing (2020) (2)
Strain relaxation processes in strained-Si layer on SiGe-on-insulator substrates (2006) (2)
Numerical analyses of optical loss and modulation bandwidth of an InP organic hybrid optical modulator. (2020) (2)
Advanced non-Si channel CMOS technologies on Si platform (2010) (2)
Hole mobility enhancement in extremely-thin-body strained GOI and SGOI pMOSFETs by improved Ge condensation method (2018) (2)
Source/drain formation by using epitaxial regrowth of N+InP for III–V nMOSFETs (2009) (1)
(Invited) MOS Interface Defect Control in Ge/III-V Gate Stacks (2017) (1)
Device Design of High-Speed Source-Heterojunction-MOS-Transistors (SHOT) under 10-nm Regime (2005) (1)
Multi-bandgap III-V on insulator wafer fabricated by quantum well intermixing for III-V CMOS photonics platform (2014) (1)
Modeling of saturation velocity for simulation of deep submicron nMOSFETs (1997) (1)
p-n Junction Leakage Current in Strained-Si/SGOI Diodes (2006) (1)
High electron mobility enhancement on (110) surface due to uniaxial strain and its impact on short channel device performance of SOl FinFETs (2008) (1)
Integrated photonic architectures for matrix multiplication (2022) (1)
Mobility-Enhanced CMOS Technologies Using Strained Si/SiGe/Ge Channels (2006) (1)
Requirements of epitaxially grown InGaAs channel layers for tunnel field-effect transistors (2020) (1)
Screening Effect on Remote Coulomb Scattering due to impurities in Polysilicon Gate of MOSFET (2003) (1)
Ge photodetector integrated with Ge-on-insulator MOSFET by using oxidation condensation technique (2008) (1)
Near-infrared and mid-infrared integrated photonics based on Ge-on-insulator platform (2017) (1)
GaSb-on-insulator metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding technology (2013) (1)
Strained SOI technology for high-performance, low-power CMOS applications (2003) (1)
Effect of SiGe Layer Thickness in Starting Substrate on Electrical Properties of Ultrathin Body Ge-on-Insulator pMOSFET Fabricated by Ge Condensation (2017) (1)
Heterogeneous integration of SiGe/Ge and III–V on Si for CMOS photonics (2016) (1)
Germanium Mid-infrared Integrated Photonics on GeOI Platform (2021) (1)
Structure and Characteristics of Strained-Si-On-Insulator (Strained-SOI) MOSFETs (2001) (1)
Design of SiGe/Buried Oxide Layered Structure to Form Highly Strained Si Layer on Insulator for SOI MOSFETs (2000) (1)
Advanced CMOS technologies using III-V/Ge channels (2011) (1)
Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP (0 0 1) substrates (2021) (1)
Papers from the 3rd International SiGe Technology and Device Meeting (Princeton, New Jersey, USA, 15–17 May 2006) (ISTDM 2006) (2007) (1)
Effects of ge-source impurity concentration on electrical characteristics of Ge/Si hetero-junction tunneling FETs (2017) (1)
MOS Device Technology using Alternative Channel Materials for Low Power Logic LSI (2018) (1)
Two Correlated Mechanisms in Thin SiO2 Breakdown (1996) (1)
Controlling anion composition at MIS interfaces on III-V channels by plasma processing (2011) (1)
Self-aligned metal S/D InP MOSFETs using metallic Ni-InP alloys (2011) (1)
(Invited) MOS Interface Control Technologies for Advanced III-V/ Ge Devices (2015) (1)
Waveguide InGaAs photodetector with schottky barrier enhancement layer on III-V CMOS photonics platform (2014) (1)
Mobility improvement of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs on flipped Smart-Cut™ GeOI substrates (2015) (1)
Properties of ultrathin-body condensation Ge-on-insulator films thinned by additional thermal oxidation (2015) (1)
A floating gate negative capacitance MoS2 phototransistor with high photosensitivity. (2022) (1)
Evaluation of Interface State Density of Strained-Si MOS Interfaces by Conductance Method (2013) (1)
Corrections to “Operation of (111) Ge-on-Insulator n-channel MOSFET Fabricated by Smart-Cut Technology” [Jul 20 985-988] (2020) (1)
Ultra-low power MOSFET and tunneling FET technologies using III-V and Ge (2017) (1)
(Invited) III-V-On-Insulator MOSFETs on Si Substrates Fabricated by Direct Bonding Technique (2010) (1)
Numerical analysis of carrier-depletion InGaAsP optical modulator with lateral PN junction formed on III–V-on-insulator wafer (2017) (1)
Comparison of hot-carrier degradation in n- and p-MOSFETs with various nitride-oxide gate films (1990) (1)
Evidence of correlation between surface roughness and interface states generation in unstrained and strained-Si MOSFETs (2010) (1)
Thin body GaSb-OI P-mosfets on Si wafers fabricated by direct wafer bonding (2014) (1)
Effect of Sample Thickness on SiO2/Si Interface Roughness Characterization through Transmission Electron Microscope Measurements in Strained-Si MOSFETs (2011) (1)
Verification of influence of tail states and interface states on sub-threshold swing of Si n-channel MOSFETs over a temperature range of 4–300 K (2021) (1)
Numerical analysis of strained SiGe-based carrier-injection optical modulators (2012) (1)
Improvement of S-factor method for evaluation of MOS interface state density (2014) (1)
Interface state generation in Al 2 O 3 /InGaAs MOS structures by electrical stress (2017) (1)
Formation of InGaAs-On-Insulator Structures by Epitaxial Lateral Over Growth from (111) Si (2007) (1)
(Invited) Performance Enhancement Technologies in III-V/Ge MOSFETs (2013) (1)
Examination of the Universality of Hole Mobility in Strained-Si p-MOSFETs (2005) (1)
Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETs (2013) (1)
Improvement of material quality of (100) and (111) Ge-on-insulator substrates fabricated by smart-cut technology (2019) (1)
Uniform InGaAs micro-discs on Si by micro-channel selective-area MOVPE (2009) (1)
Experimental study of single source-heterojunction MOS transistors (SHOTs) under quasi-ballistic transport (2008) (1)
Ultralow-dark-current Ge photodetector with GeO2 passivation and gas-phase doped junction (2011) (1)
Heterogeneous integration of SiGe/Ge and III-V for Si photonics (2016) (1)
Ultra-thin body MOS device technologies using high mobility channel materials (2013) (1)
Strain and surface orientation engineering in extremely-thin body Ge and SiGe-on-insulator MOSFETs fabricated by Ge condensation (2019) (1)
Fabrication of Ge-rich SiGe-On-insulator waveguide for optical modulator (2011) (1)
Re-examination of effects of ALD high-k materials on defect reduction in SiGe metal–oxide–semiconductor interfaces (2021) (1)
Strain-induced enhancement of free-carrier effects in SiGe for optical modulator and VOA applications (2014) (1)
Planar non-volatile memory with single-electron channel fabricated on a hyper-thin SOI film (1999) (1)
CMOS photonics technologies based on heterogeneous integration of SiGe/Ge and III-V on Si (2015) (1)
Highly-strained SGOI p-channel MOSFETs fabricated by applying Ge condensation technique to strained-SOI substrates (2011) (1)
Optimum Channel Design of Extremely-Thin-Body nMOSFETs Utilizing Anisotropic Valley—Robust to Surface Roughness Scattering (2022) (1)
Ultrahigh-sensitivity optical power monitor for Si photonic circuits (2021) (1)
Non-volatile Compact Optical Phase Shifter based on Ge₂Sb₂Te₅ operating at 2.3 μm (2022) (1)
SPICE simulation of 32-kHz crystal-oscillator operation based on Si tunnel FET (2020) (1)
High Mobility sub-60nm Gate Length Germanium-On-Insulator Channel pMOSFETs with Metal Source/Drain and TaN MIPS Gate (2008) (1)
Impact of Gradual Source/Drain Impurity Profiles on Performance of Germanium Channel Double-Gated pMISFETs (2007) (1)
Modulation of NiGe/Ge Schottky Barrier Height by Dopant and Sulfur Segregation during Ni Germanidation for Metal S/D Ge MOSFETs (2005) (1)
Influences of Gate-Poly Impurity Concentration on Inversion-Layer Mobility in MOSFETs with Ultrathin Gate Oxide Film (2003) (1)
Performance enhancement of GOI tunneling FETs with source junctions formed by low energy BF 2 ion implantation (2017) (1)
Advanced CMOS technologies for ultra-low power logic and AI applications (2021) (1)
Effect of Fine Particle Bombarding on Thermal Fatigue Property of Tool Steel for Die Casting (2008) (1)
[JSAP Young Scientist Award Speech] High-modulation-efficiency InGaAsP/Si hybrid MOS optical modulators using direct wafer bonding (2017) (0)
High-speed optical modulation by III-V/Si hybrid MOS optical modulator with low parasitic capacitance (2020) (0)
Uniaxially Strained SGOI and SSOI Channels for High Performance Multi-Gate CMOS (2008) (0)
(Invited) Ultra-Low Power III-V-Based MOSFETs and Tunneling FETs (2018) (0)
Thermo-optic Mach–Zehnder Interferometer Integrated with Si PN Diode Switch for Bipolar Optical Phase Control (2021) (0)
(III–V/Ge)-On-Insulator CMOS technology (2011) (0)
Effects of the impurity concentration in the Ge sources on the electrical properties of Ge/Si TFETs (2018) (0)
Proposal of Analytical Single-Electron Transistor Model and Its Implication for Realistic Circuit Operation (1999) (0)
Fabrication of HfO_xN_y dielectrics on Ge from HfN_x deposition (2007) (0)
Investigation of low-loss graphene mid-infrared optical optical modulator (2017) (0)
Influence of Al 2 O 3 /GeO x /Ge MOS interface structures on the slow trap density (2016) (0)
Energy Distribution of Slow Trap Density at La 2 O 3 /InGaAs MOS Interfaces (2016) (0)
Si Microring Resonator Switch Based on III-V/Si Hybrid MOS Optical Phase Shifter Using Ultrathin InP Membrane (2020) (0)
Investigation of modulation efficiency of InGaAsP/Si hybrid MOS optical modulators using direct wafer bonding (2016) (0)
Impact of Minorty Carrier Response on Characterization of Ge MIS Interface Traps (2009) (0)
Graphical Approach to Sensitive Detection of Interface Defects in Thin Oxide MOS Capacitors (2002) (0)
As channel band-to-band tunneling MOSFETs (2011) (0)
Experimental Examination of Reservoir Computing with Ferroelectric FET (2019) (0)
Uniaxially Strained Si/SiGe Wire-Channel Transistors (2008) (0)
Investigation of Low-loss Mid-infrared Waveguide Using n-type Ge (2018) (0)
Effects of source impurity concentration on electrical characteristics of GaAsSb/InGaAs TFET (2017) (0)
Modeling and Benchmarking of Si-Photonics Hybrid MOS Optical Modulators (2017) (0)
MOS interface properties of ALD Al 2 O 3 /Y 2 O 3 /GeO x /Ge gate stacks with plasma post oxidation (2017) (0)
Impact of GeOx passivation on Dark Current for wafer-bonded Ge-on-insulator metal-semiconductor-metal photodetector (2015) (0)
Device characteristics of planar-type In 0.53 Ga 0.47 As channel band-to-band tunneling MOSFETs (2011) (0)
High performance CMOS device technologies in nano CMOS era (2006) (0)
III-V on SiC platform for photonics application (2018) (0)
Ultra-thin Ge-on-Insulator (GOI) Metal S/D p-channel MOSFETs fabricated by low temperature MBE growth (2006) (0)
Bandgap-tunable III‐V‐OI Photonics Platform with Quantum Well Intermixing for Versatile Active-passive Integration of Chip-scale Photonic Integrated Circuits (2021) (0)
Low temperature surface passivation for carrier injection type SiGe optical modulator (2013) (0)
Impacts of Surface Roughness Reduction in (110) Si Substrates by High Temperature Annealing on Electron Mobility in n-MOSFETs on (110) Si (2012) (0)
An Extraction Method of Interface State Density near Conduction Band Edge at SiC MOS Interfaces (2016) (0)
Metal source/drain inversion-mode InP MOSFETs (2009) (0)
New short-channel effects on nitrided oxide gate MOSFETs (1990) (0)
Strained Si for enhanced CMOS performance (2004) (0)
Effects of gate current stress on electrical characteristics of Ge channel pMOSFETs with Si passivation (2008) (0)
High Velocity Electron Injection into Channel Region in MOSFETs with Heterojunction Source Structures (2004) (0)
Inversion-Layer Mobility Limited by Coulomb Scattering on Si (100), (110) and (111) n-MOSFETs (2009) (0)
Impact of La 2 O 3 Interfacial Layers on InGaAs MOS Interface Properties in ALD Al 2 O 3 /La 2 O 3 /InGaAs Gate Stacks (2015) (0)
Material and structure design for advanced CMOS channels (2004) (0)
III-V/Si hybrid integration for scalable optical switching and computing (2022) (0)
Heterogeneous integration of SiGe / Ge and III-Vs on Si for electronic-photonic integrated circuits (2016) (0)
InGaAsP variable optical attenuator on III-V CMOS photonics platform (2016) (0)
Computational design of high efficiency grating coupler using evolutionary computation (2019) (0)
Semiconductor-insulator-semiconductor (SIS) structures for high-performance optical modulation (2018) (0)
Demonstration of GaAsSb/InGaAs vertical tunneling FETs (2016) (0)
Fatigue Crack Generation in Compound Layer of Nitrided Low Carbon Steel (2019) (0)
Numerical analysis of Ge/Si hybrid MOS optical modulator operating at mid-infrared wavelength (2019) (0)
FeFET-based non-volatile III-V/Si hybrid optical phase shifters (2022) (0)
Thin germanium dioxide film with a high quality interface formed in a direct neutral beam oxidation process (2012) (0)
III–V/Ge CMOS device technologies for future logic LSIs (2014) (0)
Fabrication of Ultra-Thin Strained Ge-on-Insulator Substrate by Ge-Condensation Technique (2003) (0)
III-V/Ge Channel MOS Transistor Technologies for Advanced CMOS (2012) (0)
CMOS Photonics Based on SiGe and Ge for near and Mid-infrared Photonic Integrated Circuits (2016) (0)
Effects of Several Factors on the Mechanical Properties of Unidirectional Carbon Fiber Reinforced Carbon (1984) (0)
In content dependence of Pre-treatment Effects for Al 2 O 3 /In x Ga 1-x As MOS Interface Properties (2016) (0)
III–V on silicon for high-speed electronics and CMOS photonics (2011) (0)
Platform Technology for Electric-Photonic Integrated Circuits by III-V CMOS Photonics (2014) (0)
Coupled-Resonator-Induced-Transparency on Germanium-on-Insulator Mid-Infrared Platform (2019) (0)
412 Mechanism of Warpage Increase Behavior Induced by Thermal Cycling in Semiconductor Package (2013) (0)
Impact of metal gate electrodes on electrical properties of Y 2 O 3 /Si 0.78 Ge 0.22 gate stacks (2019) (0)
Si microring resonator optical switch based on optical phase shifter with ultrathin-InP/Si hybrid metal-oxide-semiconductor capacitor. (2021) (0)
Impact of source-to-channel carrier injection properties on device performance of sub-100nm metal source/drain Ge-pMOSFETs (2008) (0)
Demonstration of n-ZnO/p-(Si, Ge) bilayer tunneling field effect transistor (2018) (0)
Investigation of impact of InGaAsP quantum well on the modulation efficiency of III-V/Si hybrid MOS optical modulator (2019) (0)
Investigation of carrier-depletion InGaAsP optical modulator on III-V CMOS photonics platform (2016) (0)
Pre-treatment Effects on Al 2 O 3 /In x Ga 1-x As MOS Interface Properties and their Physics Model (2017) (0)
Gate all around (GAA) strained-silicon-on-nothing (SSON) MOSFETs and evaluation of their strain by nano-beam diffraction (NBD) (2008) (0)
Energy relaxation of two-dimensional electrons in Si-MOSFETs : determination of deformational potential constant of conduction band of Si (2006) (0)
Evaluation of surface potential of ferroelectric-gate MOS capacitors by C-V analyses (2019) (0)
Numerical Analysis of III-V/Si Hybrid MOS Microdisk Modulator (2019) (0)
Improvement of Interface Properties of GeO 2 /Ge MOS Structures Fabricated by Thermal Oxidation (2008) (0)
Group IV/oxide semiconductor bi-layer tunneling FET (2019) (0)
Effects of thermal annealing on film quality of InAs-On-Insulator structures fabricated by Smart Cut method (2019) (0)
III-V/Ge-based tunneling MOSFET (2017) (0)
N-type impurity doping into Ge from Spin On Glass for Tunneling FETs (2017) (0)
Effect of Tensile Strain on Gate and Substrate Currents of strained-Si n-MOSFETs (2006) (0)
Pre-cleaning Effects for Al 2 O 3 / p -In x Ga 1-x As MOS Interfaces (2018) (0)
High Performance Top-Gate ZnO TFT Achieved by Post Oxidation and Annealing (2017) (0)
Coupled-Resonator-Induced-Transparency on Germanium-on-Insulator Mid-Infrared Platform (2019) (0)
Fabrication of SiO2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on Ge (2006) (0)
Effects of gate electrode metal and drain doping concentration on electrical characteristics of Ge/Si hetero-junction tunneling FETs (2017) (0)
Demonstration of Mach-Zehnder interferometer optical switch with InGaAsP/Si hybrid MOS optical phase shifter (2018) (0)
Proposal of Reservoir Computing Using Ferroelectric FET (2019) (0)
Investigation of MoS 2 MOS interfacial properties by the conductance method (2016) (0)
High Performance (110)-oriented GOI pMOSFETs Fabricated by Ge Condensation Technique (2009) (0)
Contributions of Interface-Trap and Minority-Carrier Responses to C-V characteristics of Al 2 O 3 /InGaAs Capacitors (2010) (0)
Critical Impact of Ferroelectric-Phase Formation Annealing on MFIS Interface of HfO2-Based Si FeFETs (2020) (0)
Photonic Integrated Circuit Platform using III-V on SiC Wafer (2016) (0)
InGaAs MOS Gate Stack Formation and the MOS Interface Properties (2012) (0)
Monolithic Integration of Ge Photodetector with Amorphous Si Waveguide on the Ge-on-Insulator Substrate (2017) (0)
Optimization of modulation efficiency of InGaAsP/Si hybrid MOS optical modulator (2017) (0)
Toward high modulation efficiency of III-V/Si hybrid MOS optical phase shifter by equivalent oxide thickness scaling (2019) (0)
Diffusion properties of n-type dopants diffused from spin on glass into Ge (2020) (0)
Limit on Triode Region Drivability for a 0.1μm MOSFET, Predicted by Process/Device Simulation Including Parasitic Resistance (1989) (0)
Formation of strained Si/SiGe on insulator structure with a [110] surface (2003) (0)
Group IV Based Bi-Layer Tunneling Field Effect Transistor (2019) (0)
Evaluation of Effective Mass of Inversion-layer Holes in Strained-Si pMOSFETs utilizing Shubnikov de-Haas (SdH) Oscillation (2016) (0)
Low Temperature Deformation Behavior at 10^3 s^ for a Ferrite-Martensite Steel (2002) (0)
Physical Origins of Surface Carrier Density Dependences of Interface- and Remote-Coulomb Scattering Mobility in Si MOS Inversion Layer (2005) (0)
InGaAs and InGaAs-On-Insulator n-Channel MOSFETs Fabricated by Self-Align Gate First Process with Ni/Al 2 O 3 Gate Stacks (2010) (0)
Mobility-Enhanced MOS Device Technologies in Nano-CMOS era (2007) (0)
Suppression of Void Generation in Direct Wafer Bonding for Si High-k MOS Optical Modulators using Al 2 O 3 /HfO 2 Bonding Interface (2015) (0)
High-temperature phosphorous passivation of Si surface for improved heteroepitaxial growth of InAs as an initial step of III-As MOVPE on Si (2010) (0)
Investigation of organic EO polymer optical modulator with InP slot waveguide (2019) (0)
The fabrication of the graphene slot waveguide for optical modulator (2016) (0)
Monolithic integration of electro-absorption modulators and photodetectors on III-V CMOS photonics platform by quantum well intermixing. (2022) (0)
Change in electrical characteristics of InGaAs tunnel FETs by gate current stress (2016) (0)
Improvement of ferroelectric properties of TiN/Hf0.5Zr0.5O2/Si gate stacks by inserting Al2O3 interfacial layers (2020) (0)
Enhancement of I ON of GeOI TFETs using low energy BF 2 ion implantation (2017) (0)
Improvement of Si 0.78 Ge 0.22 MOS interface properties by using TiN/Y 2 O 3 gate stacks with TMA passivation (2019) (0)
Low-optical-loss graphene-based phase modulator operating at mid-infrared wavelength (2017) (0)
Evaluation of valence band effective mass in strained-Si p-MOSFETs utilizing SdH oscillation (2016) (0)
Experimental Evidence of Low Dislocation Density of SiGe-on-Insulator Substrates Fabricated by Oxidizing SiGe/SOI Structures (2002) (0)
Effect of Zirconium Addition on Microstructure and Mechanical Property of γ-Base Titanium Aluminide Prepared by Casting-HIP Process (1996) (0)
Realization of dislocation-free relaxed SiGe-on-Insulator substrates by mesa isolation (2002) (0)
Formation of p + /n Ge junction with steep impurity profile by snowplow effect of NiGe (2017) (0)
Ge-on-Insulator Platform for Mid-Infrared Integrated Photonics (2018) (0)
[JSAP-OSA Joint Symposia 2016 Invited Talk] Heterogeneous integration of SiGe/Ge and III-Vs on Si for electronic-photonic integrated circuits (2016) (0)
Nature of Interface Traps in Ge MIS Structures with GeO 2 Interfacial Layers (2010) (0)
Characterization of interface properties of Al2O3/n-GaSb and Al2O3/InAs/n-GaSb metal-oxide-semiconductor structures (2022) (0)
A-1 . 1 ( Invited ) strained Si-and siGe-on-Insulator ( strained sor and sGoI ) MosF ' ETs as New Ilevice Options for High performance CMOS (0)
Improvement of MOS Interfaces of La 2 O 3 /InGaAs by Ultra-thin ALD Al 2 O 3 Capping Layers (2016) (0)
Effect of substrate type on electrical characteristics of TiN/Hf 0.5 Zr 0.5 O 2 /Si MFS capacitors (2019) (0)
Evaluation of doping concentration of MoS 2 via Schottky diode for the Terman method (2020) (0)
Re-Examination of sulfur treatment effects on Al 2 O 3 /InGaAs MOS interface properties (2019) (0)
[Young Scientist Presentation Award Speech] Performance enhancement of planar-type Quantum well InGaAs TFET by EOT scaling using ZrO2 (2019) (0)
Properties of ultrathin body condensation GOI films thinned by additional thermal oxidation (2014) (0)
711 The EBSD Crystalline Orientation Analysis on Low Carbon Steel after Plastic Deformation (2010) (0)
(Invited) Tunneling FET Technologies Using III-V and Ge Materials (2015) (0)
Origins for Electron Mobility Improvement in InGaAs MISFETs with (NH 4 ) 2 S Treatment (2009) (0)
Electrical characteristics of MOSFETs using anti-ferroelectric thin films as gate insulators (2018) (0)
Impact of Strained-Si Channel on CMOS Circuit Performance under the Sub-100nm Regime (2000) (0)
Energy-Efficient Reliable HZO FeFET Computation-in-Memory with Local Multiply & Global Accumulate Array for Source-Follower & Charge-Sharing Voltage Sensing (2021) (0)
Influence of hydrogen ion implantation dose on characteristics of Ge-on-insulator substrates fabricated by smart-cut technology (2019) (0)
Advanced SOI MOSFET's with Strained-Si/SiGe Heterostructures (2001) (0)
Extremely-Thin Channel FET Technology for Advanced Logic CMOS (2022) (0)
Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs (2013) (0)
Low‐temperature mobilities and energy loss rates of two‐dimensional electrons in Si inversion layers (2007) (0)
Remote impurity scattering in Si MOSFETs with thin gate oxides ‐ possible screening effect by mobile charges in the gate electrodes ‐ (2011) (0)
Impact of lateral profile of implanted dopants in Si optical modulator (2016) (0)
Silicon Photonics Using Heterogeneous Integration for Society 5.0 (2021) (0)
Annealing effects on electrical characteristics of Ge-source/Si-channel hetero-junction tunneling FETs (2017) (0)
Penetration of water molecule into surface-oxidized layer of SiN x films (2018) (0)
F-4-2 Erperimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxiile MOSFETs with Direct Tunneling Current (0)
CMOS Devices - Physics and Technologies of Mobility Enhancement (2007) (0)
1104 The Increase Mechanism of Thermal Cycling Induced Curvature Deformation in Semiconductor Package (2008) (0)
Improvement in the modulation bandwidth of MOS optical modulators by using p -SiGe slab (2015) (0)
Mobility Degradation of Ge MOSFETs in High Ns Region due to Interface States inside Conduction and Valence Bands of Ge (2013) (0)
Prediction of Flow Stress at 10^3/s for an Ultra Low Carbon Steel by the Kocks - Mecking Model (2001) (0)
Improvement of Memory Characteristics of MFIS Structures by Combination of Pulsed Laser Deposited SrBi2Ta2O9 Films and Ultra-Thin SiN Buffer Layers (1999) (0)
Challenges and Opportunities of Near and Mid-Infrared Photonics Based on SiGe and Ge (2016) (0)
Diffusion of Carbon in SiO2 Films and Its Segregation at Si/SiO2 Interface (1996) (0)
InP metal‐insulator‐semiconductor field‐effect transistors using vacuum‐evaporated films (1988) (0)
Advanced MOS Device Technology for Low Power Logic LSI (2019) (0)
Advanced Nano CMOS Platform using Carrier-Transport-Enhanced Channels (2008) (0)
High electron mobility in Ge nMISFETs with high quality S/D formed by solid source diffusions (2009) (0)
Fabrication of High Quality InAs-on-Lnsulator Structures by Smart Cut Process with Reuse of InAs Wafers (2019) (0)
High mobility Ge channel metal source/drain pMOSFETs with nickel fully silicided gate (2007) (0)
Extremely-thin-body strained GOI pMOSFETs fabricated by thinning Ge condensation GOI through plasma oxidation (2017) (0)
Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in MOSFETs with N2O and NO Oxynitrides (2000) (0)
Ge-on-insulator Platform for Mid-infrared Photonic Integrated Circuits (2022) (0)
Effects of W/ZrO 2 /Al 2 O 3 gate stack on the performance of InGaAs TFET with Zn-diffused source (2018) (0)
Evaluation of Charge Distribution at MOS Interface Toward Deep Understanding of Device Operation of Ferroelectric FETs (2020) (0)
Effect of thermal annealing on InAs-On-Insulator substrates fabricated by Smart Cut (2019) (0)
Strained-Si/SiGe-On-Insulator CMOS technology as a platform of device performance boosters (0)
Performance evaluation of InGaAs TFETs with high-In-content InGaAs Quantum Well (2016) (0)
Investigation of Franz-Keldysh effect and carrier depletion effect in III-V/Si hybrid MOS optical modulator (2019) (0)
Effectiveness of Surface Potential Fluctuation for Representing Inversion-Layer Mobility Limited by Coulomb Scattering in MOFETs (2015) (0)
The effects of biaxially-tensile strain to properties of Si/SiO2 interface states generated by electrical stress (2014) (0)
Experimental Evidence of Coexistence of Interface Traps Interacting with Majority and Minority Carriers in Ge MIS Structures (2007) (0)
Impact of gate input pulse width on FeFET-based reservoir computing (2021) (0)
Effects of MIS Interfacial Layers on Interface Trap Density near Conduction Band Edge in Ge MIS Structures (2009) (0)
Surface Oxidation process of SiO x films under humid environment (2017) (0)
Low-Power Ge Thermo-Optic Phase Shifter on Ge-on-Insulator Platform (2018) (0)
Si/III-V CMOS photonics for low-power electronic-photonic integrated circuits on Si platform (2016) (0)
High Performance Top-Gate Zinc Oxide Thin Film Transistor (ZnO TFT) by Combination of Post Oxidation and Annealing (2017) (0)
Impact of Two-Dimensional Structure of nMOSFETs on Direct Tunnel Gate Current (2001) (0)
Antiferroelectricity and Cycling Behavior of ALD ZrO2 Ultra-thin Films (2020) (0)
Ge Ring Modulator Based on Carrier-injection Phaser Shifter Operating at Two Micrometer Band (2021) (0)
Simulation of carrier-depletion strained SiGe optical modulators with vertical p-n junction (2014) (0)
Compressively-strained ultra-thin body Ge-OI structure fabricated by Ge condensation method with reduced temperature cycles (2016) (0)
Reduction of slow trap density in Al 2 O 3 /n-Ge MOS interfaces by insertion of GeO x N y (2016) (0)
Improvement of p-type GaAs0.51Sb0.49 metal-oxide-semiconductor interface properties by using ultrathin In0.53Ga0.47As interfacial layers (2019) (0)
Numerical analysis of Waveguide coupled graphene thermal emitter (2019) (0)
Low-Crosstalk Optical Switch with InGaAsP/Si Hybrid MOS Optical Phase Shifter (2017) (0)
III-V/Si Hybrid MOS Optical Phase Modulator for Si Photonic Integrated Circuits (2018) (0)
Experimental demonstration of n-/p-TFET operations in a single ZnSnO/SiGe bilayer structure (2019) (0)
Devices Structures and Carrier Transport Properties of Advanced CMOS Using High Mobility Channels (2019) (0)
Numerical analysis of optical phase modulator operating at 2 μm wavelength using graphene/III–V hybrid metal-oxide-semiconductor capacitor (2021) (0)
Mobility-Enhanced Device Technologies Using SiGe/Ge MOS Channels (2007) (0)
Numerical Investigation of High-Speed Surface-Normal Modulator Using InP High-Contrast Grating (2022) (0)
Evaluation of Electron and Hole Mobility at Identical MOS Interfaces by using Metal Source/Drain GOI MOSFETs (2008) (0)
Proposal of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment (2018) (0)
(Invited) Tunneling FET Device Technology for Ultra-Low Power Integrated Circuits (2019) (0)
Fabrication of (110) GOI layers by Ge condensation of SiGe/ (110) SOI structures and application to pMOSFET devices (2007) (0)
Fabrication of SiGe-on-insulator substrates for high-performance strained SOI-MOSFETs by germanium condensation technique (2003) (0)
[Young Scientist Presentation Award Speech] Physical origins of slow traps for ALD high-k dielectrics on GeO x /Ge interfaces (2018) (0)
Invited) MOS Interface Control of High Mobility Channel Materials for Realizing Ultrathin EOT Gate Stacks (2013) (0)
Near-Infrared and Mid-Infrared Integrated Photonics Using Ge-on-Insulator (2020) (0)
1 Strained-Si CMOS Technology (0)
Dielectric Thin Films for Future Electron Devices: Science and Technology (2014) (0)
Physical Mechanism for Hole Mobility Enhancement in (110)-Surface Strained-Si/Strained-SiGe Structures with Anisotropic/Biaxial Strain (2007) (0)
TCAD simulation of planar single-gate Si tunnel FET with average subthreshold swing less than 60 mV/dec for 0.3 V operation (2017) (0)
High Performance Tunneling Field-Effect Transistors by Material Engineering (2019) (0)
J0103-2-1 Effect of Temperature Condition of The Increase Mechanism of Thermal Cycling Induced Curvature Deformation in Semiconductor Package (2009) (0)
[JSAP Young Scientist Award Speech] High compressive strain GOI pMOSFET fabricated by Ge condensation process with reduced cooling rate (2017) (0)
Evaluation of slow traps in MoS 2 MOS interface (2017) (0)
Investigation of carrier-depletion InGaAsP optical modulator with L-shaped PN junction on III-V CMOS photonics platform (2017) (0)
Performance of Germanium Metal-Insulator-Semiconductor Field Effect Transistors with Nickel Germanide Source/Drain (2008) (0)
Fabrication process of thin-body InGaAs-OI TFET on Si by Direct Wafer Bonding (2017) (0)
Surface orientation depdendence of electro-optic effects in InGaAsP for lateral PIN-junction InGaAsP photonic-wire modulators (2014) (0)
Broadband UV-VIS-NIR Photodetection with High Responsivity MoS2 Phototransistors Based on Light Reflection (2020) (0)
Carrier Trapping Properties in La 2 O 3 /InGaAs MOSFETs (2016) (0)
High performace strained-SOI CMOSFETs (2003) (0)
Quantitative Understanding of Mobility Degradation in High Effective Electric Field Region in MOSFETs with Ultra-thin Gate Oxides (2004) (0)
Low-Resistance Lateral Junction Formation for Laser Diodes on III-V CMOS Photonics Platform (2014) (0)
Comparison of thickness-dependence of structural degradation in tensile-strained GaAsSb and InGaAs layers grown on InP substrates (2019) (0)
Planar-type InGaAs TFET with sub-60mV/dec S.S. by gate stack engineering of ZrO2 (2018) (0)
Study on physical origins of slow traps for electrons and holes in ALD Al 2 O 3 /GeO x /Ge interfaces (2017) (0)
Monolithic Integration of III-V/Si Hybrid MOS Optical Phase Shifter and InGaAs Membrane Photodetector (2021) (0)
Re-Examination on the Universality of Si-MOS Inversion Layer Mobility (2003) (0)
Investigation of optical neural netwrok using microring reosnator crossbar arrays (2020) (0)
Performance Enhancement under High-Temperature Operation and Physical Origin of Mobility Characteristics in Ge-rich strained SiGe-on-Insulator pMOSFETs (2005) (0)
Effects of Nitrided-InGaAs Interfacial Layers formed by ECR nitrogen plasma on Al 2 O 3 /InGaAs MOS Properties (2011) (0)
Modulation bandwidth improvement of MOS optical modulators based on strained SiGe (2016) (0)
Fabrication of HfOxNy dielectrics on Ge from HfNx deposition (2007) (0)
Characterization of in-plane strain relaxation in strained layers after mesa isolation using a newly developed plane-NBD method (2006) (0)
Sub-μm Silicon SETs on Self-Undulated Hyper-Thin SOI Films (1999) (0)
Proposal of Ge/Si hybrid MOS optical modulators for mid-infrared photonics (2018) (0)
Bandgap-tunable III‐V‐OI Photonics Platform with Quantum Well Intermixing for Versatile Active-passive Integration of Chip-scale Photonic Integrated Circuits (2021) (0)
Significant Effect of OH inside Silicon Chemical Oxides on AHF(Anhydrous Hydrofluoric Acid) Etching (1996) (0)
Introduction of high tensile strain into Ge-on-Insulator structures by oxidation and annealing at high temperature (2021) (0)
Equivalent oxide thickness scaling for efficient III-V/Si hybrid MOS optical phase shifter (2019) (0)
7‐5: Invited Paper: Bilayer Tunneling Field Effect Transistors using Oxide Semiconductor/Group‐IV Semiconductor Hetero‐structures (2021) (0)
Observation of Sub-bandgap Photodetection at 2 μm wavelengths in a Germanium Lateral PIN Photodetector (2020) (0)
High-performance Ge MOS transistors with interface control layers (2009) (0)
Impact of asymmetric strain on performance of extremely-thin body (100) GOI and (110) SGOI pMOSFETs (2021) (0)
III-V CMOS technologies on Si platform (2011) (0)
Design Optimization of Ultralow Capacitance InGaAs Waveguide Photodetector on III-V CMOS photonics platform (2018) (0)
Improvement of ferroelectric properties of TiN/Hf 0.5 Zr 0.5 O 2 /Si gate stacks by inserting Al 2 O 3 interfacial layers (2020) (0)
Strained Si- and SiGe-On-Insulator (Strained SOI and SGOI) MOSFETs as New Device Options for High Performance CMOS (2002) (0)
Improvement of Electrical Properties of InGaAs MOS Interfaces by Inserting La Oxide Interfacial Layers into InGaAs Gate Stacks (2015) (0)
Electrical Properties of Ultra-Thin Body (111) Ge-On-Insulator n-Channel MOSFETs Fabricated by Smart-Cut Process (2021) (0)
Sb-diffused Source/Drain Ultra-thin Body Ge-On Insulator nMOSFETs Fabricated by Ge Condensation (2013) (0)
Characterization of Slow Traps in SiGe MOS Interfaces by TiN/Y2O3 Gate Stacks (2021) (0)
Understanding of hard and soft breakdown phenomena in thin gate oxides through carrier transport properties after breakdown (2001) (0)
(Invited) Device and Integration Technologies of III-V/Ge Channel CMOS (2011) (0)
Surface oxidation process of silicon nitride films under humid environment (2016) (0)
[Highlight]Examination of impact of ferroelectricity on reservoir computing using FeFETs (2020) (0)
Ge Passive Waveguide Components on Ge-on-Insulator Wafer for Mid-Infrared Integrated Photonics (2016) (0)
Evaluation of Strained Group IV Semiconductor Devices by Oil-Immersion Raman Spectroscopy (2022) (0)
Fabrication of III-V MOS Structure by using Selective Oxidation of InAlAs (2008) (0)
In Situ Monitoring of the Initial Nucleation for the Formation of Uniform InGaAs Micro-discs on Si (2009) (0)
Numerical analysis of taper-less hybrid MOS optical phase shifter (2019) (0)
Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuation in SOI MOSFETs (2005) (0)
Forward to the Special Section on “Reliability of High-Mobility Channel Materials” (2013) (0)
Mechanism of Warpage Increase Behavior Induced by Thermal Cycling in Semiconductor Package (2011) (0)
Quantitative Analysis of Surface Potential Fluctuation at MOS interfaces Using Conductance Method (2012) (0)
III-V/Ge Device Engineering for CMOS Photonics (2014) (0)
Effect of cooling process on compressive strain in GOI layers fabricated by Ge condensation (2017) (0)
冷却レートを低減した酸化濃縮プロセスにより作製した高圧縮ひずみ GOI pMOSFET High compressive strain GOI pMOSFET fabricated by Ge condensation process with reduced cooling rate (2017) (0)
Influences of channel thickness fluctuation on electrical properties of bilayer tunneling field effect transistors (2018) (0)
Electrical Characteristics of Ge/Si Hetero-Junction Tunnel Field-Effect Transistors and their Post Annealing Effects (2013) (0)
Comprehensive Understanding of Carrier Mobility in MOSFETs with Oxynitrides and Ultrathin Gate Oxides (2004) (0)
Bandgap Engineering for the Suppression of the Short Channel Effect of sub-0.1um p-channel MOSFETs (1998) (0)
Demonstration of waveguide coupled photodetector on III-V-OI wafer using quantum well intermixing (2020) (0)
Evaluation of MOS interface properties in GaAsSb MOS structures with ultrathin InGaAs interfacial layers (2016) (0)
Si Hybrid MOS Optical Phase Shifter for Switching and Computing (2018) (0)
Demonstration of Reservoir Computing Using a Ferroelectric Capacitor (2020) (0)
素子性能ブースタのプラットフォームとしての絶縁体上‐歪Si/SiGe型CMOS技術 (2004) (0)
Mid-infrared Integrated Photonics based on Germanium (2018) (0)
Material design of oxide-semiconductor/group-IV-semiconductor bilayer tunneling field effect transistors (2019) (0)
Preparation of Diamond-Like Carbon on Ti Film with Tetramethylsilane Buffer Layer (2013) (0)
Performance Improvement of InGaAs TFETs by employing EOT Scaling and Quantum Well (2016) (0)
(Invited) Extremely-Thin Body Goi Channel Technology in Nano-Sheet FET Era (2022) (0)
Performance Benchmarking of InGaAsP, Si 0.8 Ge 0.2 and Si-based Photonics Homojunction and Heterojunction PN Modulators (2017) (0)
Electrical characteristics of p-channel GOI tunneling FETs fabricated on p-type GOI (2018) (0)

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What Schools Are Affiliated With Shin-ichi Takagi?

Shin-ichi Takagi is affiliated with the following schools:

University of Tokyo