Shoou‐jinn Chang
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Shoou‐jinn Changengineering Degrees
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Electrical Engineering
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Applied Physics
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Engineering
Shoou‐jinn Chang's Degrees
- PhD Electrical Engineering University of California, Berkeley
- Masters Electrical Engineering University of California, Berkeley
- Bachelors Electrical Engineering National Taiwan University
Why Is Shoou‐jinn Chang Influential?
(Suggest an Edit or Addition)Shoou‐jinn Chang's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Laterally grown ZnO nanowire ethanol gas sensors (2007) (293)
- Band gap engineering of chemical vapor deposited graphene by in situ BN doping. (2013) (238)
- InGaN-GaN multiquantum-well blue and green light-emitting diodes (2002) (238)
- 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes (2002) (218)
- Highly sensitive ZnO nanowire CO sensors with the adsorption of Au nanoparticles (2008) (205)
- Highly sensitive ZnO nanowire ethanol sensor with Pd adsorption (2007) (205)
- The crystallization and physical properties of Al-doped ZnO nanoparticles (2008) (204)
- Optoelectronic characteristics of UV photodetector based on ZnO nanowire thin films (2009) (189)
- A CuO nanowire infrared photodetector (2011) (153)
- Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes (2002) (152)
- Doped ZnO 1D nanostructures: synthesis, properties, and photodetector application. (2014) (150)
- Highly reliable nitride-based LEDs with SPS+ITO upper contacts (2003) (133)
- ZnO metal-semiconductor-metal ultraviolet sensors with various contact electrodes (2006) (130)
- Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers (2011) (128)
- Terahertz multichanneled filter in a superconducting photonic crystal. (2010) (126)
- A New Tri-Band Bandpass Filter Based on Stub-Loaded Step-Impedance Resonator (2012) (124)
- A ZnO nanowire-based humidity sensor (2010) (120)
- Ultraviolet photodetectors with low temperature synthesized vertical ZnO nanowires (2005) (114)
- Cu2O/n-ZnO nanowire solar cells on ZnO:Ga/glass templates (2007) (113)
- Ultraviolet photodetectors with ZnO nanowires prepared on ZnO:Ga/glass templates (2006) (111)
- InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts (2003) (109)
- GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes (2002) (100)
- Electroluminescence from n-ZnO nanowires/p-GaN heterostructure light-emitting diodes (2009) (97)
- Nitride-based LEDs fabricated on patterned sapphire substrates (2003) (94)
- GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals (2000) (90)
- ZnO nanowire-based CO sensors prepared on patterned ZnO:Ga/SiO2/Si templates (2007) (88)
- n-UV+Blue/Green/Red White Light Emitting Diode Lamps (2003) (87)
- Microstructures, optical and electrical properties of In-doped ZnO thin films prepared by sol–gel method (2009) (84)
- Novel fabrication of UV photodetector based on ZnO nanowire/p-GaN heterojunction (2009) (83)
- Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells (2010) (80)
- ZnO MSM photodetectors with Ru contact electrodes (2005) (76)
- Terahertz temperature-dependent defect mode in a semiconductor-dielectric photonic crystal (2011) (72)
- Automated passive filter synthesis using a novel tree representation and genetic programming (2006) (71)
- Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint lithography (2007) (70)
- Preparation of Sr2SiO4:Eu3+ phosphors by microwave-assisted sintering and their luminescent properties (2012) (67)
- A NEW TRI-BAND BANDPASS FILTER FOR GSM, WIMAX AND ULTRA-WIDEBAND RESPONSES BY USING ASYMMETRIC STEPPED IMPEDANCE RESONATORS (2012) (66)
- Optical, structural and electrical properties of tin doped indium oxide thin films prepared by spray-pyrolysis technique (2000) (65)
- High Sensitivity of NO Gas Sensors Based on Novel Ag-Doped ZnO Nanoflowers Enhanced with a UV Light-Emitting Diode (2018) (64)
- High sensitivity of a ZnO nanowire-based ammonia gas sensor with Pt nano-particles (2010) (64)
- High responsivity of amorphous indium gallium zinc oxide phototransistor with Ta2O5 gate dielectric (2012) (64)
- High detectivity InGaN-GaN multiquantum well p-n junction photodiodes (2003) (63)
- Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs (2004) (63)
- Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface (2004) (59)
- In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer (2003) (58)
- A Lateral ZnO Nanowire Photodetector Prepared on Glass Substrate (2010) (58)
- ZnO Nanotube Ethanol Gas Sensors (2008) (58)
- ZnO ultraviolet photodiodes with Pd contact electrodes (2007) (57)
- Novel proton exchange membrane based on crosslinked poly(vinyl alcohol) for direct methanol fuel cells (2014) (56)
- Nitride-based LEDs with p-InGaN capping layer (2003) (56)
- A Tri-Band Bandpass Filter With Wide Stopband Using Asymmetric Stub-Loaded Resonators (2015) (55)
- Growth of nanoscale InGaN self-assembled quantum dots (2003) (55)
- Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor deposition (2004) (55)
- Surface Characteristics, Optical and Electrical Properties on Sol-Gel Synthesized Sn-Doped ZnO Thin Film (2010) (54)
- Nitride-based near-ultraviolet LEDs with an ITO transparent contact (2004) (54)
- Fabrication of a White-Light-Emitting Diode by Doping Gallium into ZnO Nanowire on a p-GaN Substrate (2010) (53)
- ICP etching of sapphire substrates (2005) (53)
- CuO Nanowire-Based Humidity Sensor (2012) (52)
- InGaN/GaN tunnel-injection blue light-emitting diodes (2002) (52)
- n ¿ -GaN formed by Si implantation into p-GaN (2002) (51)
- Interdiffusion in a symmetrically strained Ge/Si superlattice (1989) (51)
- Vertically well aligned P-doped ZnO nanowires synthesized on ZnO-Ga/glass templates. (2005) (50)
- Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga2O3/SiO2 dielectric (2013) (50)
- Photo-CVD SiO/sub 2/ layers on AlGaN and AlGaN-GaN MOSHFET (2003) (50)
- Well-Aligned, Vertically Al-Doped ZnO Nanowires Synthesized on ZnO : Ga ∕ Glass Templates (2005) (49)
- Tunable UV- and Visible-Light Photoresponse Based on p-ZnO Nanostructures/n-ZnO/Glass Peppered with Au Nanoparticles. (2017) (48)
- Design of a Compact Ultra-Wideband Bandpass Filter With an Extremely Broad Stopband Region (2016) (47)
- GaN Schottky barrier photodetectors with a low-temperature GaN cap layer (2003) (47)
- Low Temperature Activation of Mg-Doped GaN in O2 Ambient (2002) (46)
- A ZnO nanowire vacuum pressure sensor (2008) (46)
- p-Cu2O-shell/n-TiO2-nanowire-core heterostucture photodiodes (2011) (45)
- Buffer-Facilitated Epitaxial Growth of ZnO Nanowire (2005) (44)
- High power nitride based light emitting diodes with Ni/ITO p-type contacts (2003) (43)
- Planar GaN n ¿ - p photodetectors formed by Si implantation into p-GaN (2002) (43)
- Tungsten carbide phase transformation during the plasma spray process (1985) (43)
- Studies of InGaN∕GaN multiquantum-well green-light-emitting diodes grown by metalorganic chemical vapor deposition (2004) (42)
- A novel method for the formation of ladder-like ZnO nanowires (2006) (42)
- GaN-Based Light-Emitting Diode With Sputtered AlN Nucleation Layer (2012) (42)
- Characterization of Cu doped CdSe thin films grown by vacuum evaporation (2001) (40)
- MBE n-ZnO/MOCVD p-GaN heterojunction light-emitting diode (2009) (40)
- Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching (2001) (39)
- Nitride-based LEDs with 800C grown p-AlInGaN-GaN double-cap layers (2004) (39)
- Field-Emission and Photoelectrical Characteristics of Ga–ZnO Nanorods Photodetector (2013) (39)
- InGaN/GaN light-emitting diodes with ITO p-contact layers prepared by RF sputtering (2003) (38)
- Electrical and Optical Characteristics of UV Photodetector With Interlaced ZnO Nanowires (2011) (38)
- Enhanced field emission of well-aligned ZnO nanowire arrays illuminated by UV (2010) (37)
- Carbon Nanotubes With Adsorbed Au for Sensing Gas (2013) (37)
- Effects of O2 thermal annealing on the properties of CVD Ta2O5 thin films (2003) (36)
- Improved Performance of GaN-Based Blue LEDs With the InGaN Insertion Layer Between the MQW Active Layer and the n-GaN Cladding Layer (2010) (36)
- A Visible-Blind TiO2 Nanowire Photodetector (2012) (36)
- Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer (2003) (36)
- Photo-enhanced chemical wet etching of GaN (2002) (35)
- Visible-Blind Photodetectors With Mg-Doped ZnO Nanorods (2014) (35)
- Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes (2007) (35)
- Bending effects of ZnO nanorod metal–semiconductor–metal photodetectors on flexible polyimide substrate (2012) (35)
- Synthesis of nano-scaled yttrium aluminum garnet phosphor by co-precipitation method with HMDS treatment (2005) (35)
- Ethanol Gas Sensor of Crabwise CuO Nanowires Prepared on Glass Substrate (2011) (34)
- Comparison of the trap behavior between ZrO2 and HfO2 gate stack nMOSFETs by 1/f noise and random telegraph noise (2013) (34)
- GaN MSM photodetectors with TiW transparent electrodes (2004) (34)
- Characterization of Si implants in p-type GaN (2002) (34)
- CO2 Gas Sensors Based on Carbon Nanotube Thin Films Using a Simple Transfer Method on Flexible Substrate (2015) (33)
- High responsivity of GaN p - i - n photodiode by using low-temperature interlayer (2007) (32)
- Self-powered hybrid humidity sensor and dual-band UV photodetector fabricated on back-contact photovoltaic cell (2015) (32)
- Adsorption sensitivity of Ag-decorated carbon nanotubes toward gas-phase compounds (2013) (32)
- Transparent gas senor and photodetector based on Al doped ZnO nanowires synthesized on glass substrate (2017) (32)
- Transparent TiN Electrodes in GaN Metal–Semiconductor–Metal Ultraviolet Photodetectors (2002) (32)
- Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures (2004) (32)
- Carbon Nanotube Thin Films Functionalized via Loading of Au Nanoclusters for Flexible Gas Sensors Devices (2016) (31)
- AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field-Effect Transistor Based on a Liquid Phase Deposited Oxide (2002) (31)
- Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique (2000) (31)
- Sensitivity of EGFET pH sensors with TiO2 nanowires (2014) (31)
- ZnO-Based Ultraviolet Photodetectors With Novel Nanosheet Structures (2014) (30)
- ZnSe Nanowire Photodetector Prepared on Oxidized Silicon Substrate by Molecular-Beam Epitaxy (2009) (30)
- Enhanced Extraction and Efficiency of Blue Light-Emitting Diodes Prepared Using Two-Step-Etched Patterned Sapphire Substrates (2009) (30)
- ZnO Nanowire-Based CO Sensors Prepared at Various Temperatures (2007) (30)
- Acceptor activation of Mg-doped GaN by microwave treatment (2001) (29)
- GaN-Based LEDs With a Chirped Multiquantum Barrier Structure (2012) (29)
- ZnO metal-semiconductor-metal ultraviolet photodiodes with Au contacts (2007) (29)
- A WO3 Nanoparticles NO Gas Sensor Prepared by Hot-Wire CVD (2017) (29)
- Simple method to design a tri‐band bandpass filter using asymmetric SIRs for GSM, WIMAX, and WLAN applications (2011) (29)
- GaN-Based Multiquantum Well Light-Emitting Diodes With Tunnel-Junction-Cascaded Active Regions (2015) (29)
- Bandgap-Engineered in Indium–Gallium–Oxide Ultraviolet Phototransistors (2015) (29)
- Si and Zn co-doped InGaN-GaN white light-emitting diodes (2003) (29)
- ZnO photoconductive sensors epitaxially grown on sapphire substrates (2007) (29)
- Surface HCl treatment in ZnO photoconductive sensors (2009) (28)
- UV Enhanced Field Emission Performance of Mg-Doped ZnO Nanorods (2014) (28)
- Field-Emission and Photoelectrical Characteristics of ZnO Nanorods Photodetectors Prepared on Flexible Substrate (2012) (28)
- Transparent ZnO-nanowire-based device for UV light detection and ethanol gas sensing on c-Si solar cell (2016) (28)
- GaN MSM UV Photodetector With Sputtered AlN Nucleation Layer (2015) (28)
- Gallium nitride metal-semiconductor-metal photodetectors prepared on silicon substrates (2007) (28)
- AlGaN/GaN MSM photodetectors with photo-CVD annealed Ni/Au semi-transparent contacts (2004) (28)
- ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates (2005) (27)
- A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition (2003) (27)
- Low-Frequency Noise Characteristics of ZnO Nanorods Schottky Barrier Photodetectors (2013) (27)
- Buckling instabilities in GaN nanotubes under uniaxial compression (2005) (27)
- High UV/visible rejection contrast AlGaN/GaN MIS photodetectors (2006) (27)
- Amorphous Indium–Gallium–Oxide UV Photodetectors (2015) (27)
- GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors with Ir ∕ Pt Contact Electrodes (2007) (27)
- Improving crystalline morphology and photoluminescent properties of BaY2ZnO5:Eu3+ phosphors prepared using microwave assisted sintering (2010) (27)
- ZnO nanowires modified with Au nanoparticles for nonenzymatic amperometric sensing of glucose (2014) (27)
- The Effects of Mechanical Uniaxial Stress on Junction Leakage in Nanoscale CMOSFETs (2008) (27)
- UV Enhanced Emission Performance of Low Temperature Grown Ga-Doped ZnO Nanorods (2014) (26)
- InGaN/GaN blue light-emitting diodes with self-assembled quantum dots (2004) (26)
- High brightness InGaN green LEDs with an ITO on n/sup ++/-SPS upper contact (2003) (26)
- Optical and structural characteristics of yttrium doped ZnO films using sol–gel technology (2011) (25)
- Ga-Doped ZnO Nanosheet Structure-Based Ultraviolet Photodetector by Low-Temperature Aqueous Solution Method (2015) (25)
- Nitride-based green light-emitting diodes with high temperature GaN barrier layers (2003) (24)
- Crystalline morphology and photoluminescent properties of YInGe2O7:Eu3+ phosphors prepared from microwave and conventional sintering (2011) (24)
- Indium-diffused ZnO nanowires synthesized on ITO-buffered Si substrate (2006) (24)
- Photoelectrochemical characterization of n-type and p-type thin-film nanocrystalline Cu2ZnSnSe4 photocathodes (2015) (24)
- Deposition of SiO2 Layers on GaN by Photochemical Vapor Deposition (2003) (24)
- InGaN quantum dot photodetectors (2003) (24)
- ${\rm Ga}_{2}{\rm O}_{3}$/AlGaN/GaN Heterostructure Ultraviolet Three-Band Photodetector (2013) (24)
- Effect of sintering conditions on characteristics of PbTiO3–PbZrO3–Pb(Mg1/3Nb2/3)O3–Pb(Zn1/3Nb2/3)O3 (2004) (24)
- Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts (2005) (23)
- Effect of temperature on the deposition of ZnO thin films by successive ionic layer adsorption and reaction (2012) (23)
- P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy (2002) (23)
- InGaN/GaN light emitting diodes with a p-down structure (2002) (22)
- The Crystallized Mechanism and Optical Properties of Sol–Gel Synthesized ZnO Nanowires (2010) (22)
- High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering (2017) (22)
- On the Carrier Concentration and Hall Mobility in GaN Epilayers (2002) (22)
- Deep level defect in Si-implanted GaN n+-p junction (2003) (22)
- Effect of Eu3+ concentration on microstructure and photoluminescence of Sr2SiO4:Eu3+ phosphors prepared by microwave assisted sintering (2012) (22)
- Chromaticity of inhomogeneous broadening effect on CaxSr1-xAl2O4:Eu2+ phosphors (2006) (22)
- Sensing performance of EGFET pH sensors with CZTSe nanoparticles fabricated on glass substrates (2013) (21)
- High Density Novel Porous ZnO Nanosheets Based on a Microheater Chip for Ozone Sensors (2018) (21)
- Optimization of the dye-sensitized solar cell performance by mechanical compression (2014) (21)
- Growth and characterization of Ge/Si strained‐layer superlattices (1988) (21)
- High hole concentration of p-type InGaN epitaxial layers grown by MOCVD (2006) (21)
- Fast Detection and Flexible Microfluidic pH Sensors Based on Al-Doped ZnO Nanosheets with a Novel Morphology (2019) (21)
- Nitride-based blue LEDs with GaN/SiN double buffer layers (2003) (21)
- AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer (2003) (21)
- A simple method for fabrication of high speed vertical cavity surface emitting lasers (2004) (21)
- Liquid phase deposited SiO2 on GaN (2003) (21)
- The properties of photo chemical-vapor deposition SiO2 and its application in GaN metal-insulator semiconductor ultraviolet photodetectors (2003) (21)
- AlInN resistive ammonia gas sensors (2009) (21)
- GaN Schottky barrier photodetectors with SiN∕GaN nucleation layer (2007) (21)
- Magnesium/nitrogen and beryllium/nitrogen coimplantation into GaN (2005) (21)
- SiNx deposited by in-line PECVD for multi-crystalline silicon solar cells (2006) (20)
- Influences of surface reconstruction on the atomic-layer-deposited HfO2/Al2O3/n-InAs metal-oxide-semiconductor capacitors (2011) (20)
- Nonenzymatic Glucose Sensor Based on Au/ZnO Core-Shell Nanostructures Decorated with Au Nanoparticles and Enhanced with Blue and Green Light. (2017) (20)
- Vertical ZnO/ZnGa2O4 core–shell nanorods grown on ZnO/glass templates by reactive evaporation (2005) (20)
- Self-Powered ZnO Nanowire UV Photodetector Integrated With GaInP/GaAs/Ge Solar Cell (2013) (20)
- ZnO-Nanowire-Based Extended-Gate Field-Effect-Transistor pH Sensors Prepared on Glass Substrate (2012) (20)
- Visible–blind GaN p–i–n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure (2003) (20)
- Ga2O3 Films for Photoelectrochemical Hydrogen Generation (2014) (20)
- Laterally-grown ZnO-nanowire photodetectors on glass substrate (2009) (20)
- Luminescence properties of BAM phosphor synthesized by TEA coprecipitation method (2006) (20)
- Effects of crystallization on the optical properties of ZnO nano-pillar thin films by sol-gel method (2011) (19)
- Synthesis of CuInS2 quantum dots using polyetheramine as solvent (2015) (19)
- ANGULAR DEPENDENCE OF WAVE REFLECTION IN A LOSSY SINGLE-NEGATIVE BILAYER (2010) (19)
- Improved Field Emission Properties of Ag-Decorated Multi-Walled Carbon Nanotubes (2013) (19)
- Thermally stable luminescence properties and energy transfer of green emitting LiBaPO4: Tb3+, Ce3+ Phosphor (2017) (19)
- Investigation of Compact Balun-Bandpass Filter Using Folded Open-Loop Ring Resonators and Microstrip Lines (2014) (19)
- GaN UV photodetector by using transparency antimony-doped tin oxide electrode (2007) (19)
- GaN p-n junction diode formed by Si ion implantation into p-GaN (2002) (19)
- Inductively coupled plasma etching of GaN using Cl2/He gases (2003) (19)
- GaAs MOS capacitors with photo-CVD SiO2 insulator layers (2005) (19)
- Rinsing Effects on Successive Ionic Layer Adsorption and Reaction Method for Deposition of ZnO Thin Films (2011) (18)
- Highly Sensitive $\beta{-}{\rm Ga}_{2}{\rm O}_{3}$ Nanowire Nanowires Isopropyl Alcohol Sensor (2014) (18)
- Bipolar Ni/ZnO/HfO2/Ni RRAM with multilevel characteristic by different reset bias (2015) (18)
- Enhanced Field Electron Emission From Zinc-Doped CuO Nanowires (2012) (18)
- Optical and Electrical Characteristics of CO2-Laser-Treated Mg-Doped GaN Film (2000) (18)
- High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors (2003) (18)
- High quality ZnO thin films on InP substrates prepared by radio frequency magnetron sputtering. I. Material study (1995) (18)
- Nitride-Based LEDs With High-Reflectance and Wide-Angle Ag Mirror${+}$SiO$_{2}$/TiO$_{2}$ DBR Backsi (2011) (18)
- Homoepitaxial ZnSe MSM photodetectors with various transparent electrodes (2006) (18)
- Flicker noise of GaN-based heterostructure field-effect transistors with Si-doped AlGaN carrier injection layer (2003) (18)
- Deep UV ${\rm Ta}_{2}{\rm O}_{5}$/Zinc-Indium-Tin-Oxide Thin Film Photo-Transistor (2012) (18)
- Enhancement in the structure quality of ZnO nanorods by diluted Co dopants: Analyses via optical second harmonic generation (2015) (18)
- Low-Frequency Noise Characteristics of In-Doped ZnO Ultraviolet Photodetectors (2013) (18)
- Fabrication of coaxial p-Cu2O/n-ZnO nanowire photodiodes (2011) (18)
- High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes (2003) (18)
- Thermally stable Ir/n-ZnO Schottky diodes (2011) (17)
- Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO 2 nanorod-array patterned sapphire template (2011) (17)
- InGaN/GaN MQW p–n junction photodetectors (2002) (17)
- Low-Frequency Noise Characteristics in Strained-Si nMOSFETs (2007) (17)
- High Responsivity MgxZn1−xO Film UV Photodetector Grown by RF Sputtering (2015) (17)
- Effects of InGaN layer thickness of AlGaN/InGaN superlattice electron blocking layer on the overall efficiency and efficiency droops of GaN-based light emitting diodes. (2014) (17)
- Studies of GaAs:Er impact excited electroluminescence devices (1994) (17)
- Highly Transparent Nanostructured Zinc Oxide Photodetector Prepared by Successive Ionic Layer Adsorption and Reaction (2013) (17)
- Noise Characteristics of ZnO-Nanowire Photodetectors Prepared on ZnO:Ga/Glass Templates (2007) (17)
- 4H-SiC metal–semiconductor–metal ultraviolet photodetectors with Ni/ITO electrodes (2002) (17)
- Nanowire Photodetector Prepared on Template (2013) (17)
- AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates (2007) (17)
- Electrically driven nanopyramid green light emitting diode (2012) (17)
- GaN-Based MSM Photodetectors Prepared on Patterned Sapphire Substrates (2008) (16)
- Homoepitaxial ZnSe MIS photodetectors with SiO2 and BST insulator layers (2006) (16)
- GaN‐based Schottky barrier ultraviolet photodetector with a 5‐pair AlGaN–GaN intermediate layer (2012) (16)
- GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer. (2014) (16)
- The optimum sintering condition for KSrPO4:Eu3+ phosphors applied in WLEDs (2017) (16)
- Effect of annealing and γ-irradiation on the properties of CuInSe2 thin films (2000) (16)
- Different alkali carbonates on the microstructure and photoluminescence properties of BaY2ZnO5:Tb3+ phosphors prepared using the solid-state method (2013) (16)
- A mid-infrared tunable filter in a semiconductor–dielectric photonic crystal containing doped semiconductor defect (2011) (16)
- Growth and characterization of crack-free semipolar {1-101}InGaN∕GaN multiple-quantum well on V-grooved (001)Si substrates (2008) (16)
- GaN MSM Photodetectors with an Unactivated Mg-Doped GaN Cap Layer and Sputtered ITO Electrodes (2008) (16)
- Surface plasmon-enhanced gas sensing in single gold-peapodded silica nanowires (2013) (16)
- GaN nanocolumns formed by inductively coupled plasmas etching (2005) (15)
- Growth of quaternary AlInGaN with various TMI molar rates (2009) (15)
- Two-dimensional ZnO nanowalls for gas sensor and photoelectrochemical applications (2014) (15)
- Noise Properties of Low-Temperature-Grown Co-Doped ZnO Nanorods as Ultraviolet Photodetectors (2014) (15)
- Electron-Field-Emission Enhancement of CuO Nanowires by UV Illumination (2014) (15)
- BSIM3v3-based varactor model (2001) (15)
- A low-temperature ZnO nanowire ethanol gas sensor prepared on plastic substrate (2016) (15)
- Studies of polymer ball type polymer dispersed liquid crystal films (1996) (15)
- Enhancement of near-infrared photonic band gap in a doped semiconductor photonic crystal (2012) (15)
- InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-${\rm Ga}_{2}{\rm O}_{3}$ Cap Layers (2013) (15)
- Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector (2005) (15)
- Electron Field Emission Characteristics of Planar Field Emission Array with Diamondlike Carbon Electron Emitters (1999) (15)
- GaN-Based LEDs Output Power Improved by Textured GaN/Sapphire Interface Using In Situ $\hbox{SiH}_{\bf 4}$ Treatment Process During Epitaxial Growth (2009) (15)
- MBE growth of ZnSe nanowires on oxidized silicon substrate (2009) (15)
- High-quality ultrathin chemical-vapor-deposited Ta2O5 capacitors prepared by high-density plasma annealing (2004) (15)
- AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures (2010) (15)
- Nitride-based 2DEG photodetectors with a large AC responsivity (2003) (14)
- Efficiency Droop Characteristics in InGaN-Based Near Ultraviolet-to-Blue Light-Emitting Diodes (2012) (14)
- Cascaded GaN Light-Emitting Diodes With Hybrid Tunnel Junction Layers (2015) (14)
- Passivation with SiO2 on HgCdTe by direct photochemical‐vapor deposition* (1994) (14)
- The Optimized Geometry of the SiGe HBT Power Cell for 802.11a WLAN Applications (2007) (14)
- Photoconduction and the electronic structure of silica nanowires embedded with gold nanoparticles (2011) (14)
- ${\rm Ga}_{2}{\rm O}_{3}$/GaN-Based Metal-Semiconductor-Metal Photodetectors Covered With Au Nanoparticles (2013) (14)
- Nitride-based photodetectors with unactivated Mg-doped GaN cap layer (2008) (14)
- Recovery of thermal-degraded ZnO photodetector by embedding nano silver oxide nanoparticles (2013) (14)
- A new and simple means for self-assembled nanostructure: Facilitated by buffer layer (2004) (14)
- Synthesis of CZTSe nanoink via a facile one-pot heating route based on polyetheramine chelation (2014) (14)
- AlGaInP-sapphire glue bonded light-emitting diodes (2002) (14)
- InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts (2003) (14)
- Effect of Oxygen Vacancy Ratio on a GaZTO Solar-Blind Photodetector (2018) (14)
- Investigation of defect modes in a defective photonic crystal with a semiconductor metamaterial defect (2014) (14)
- Direct Oxidation of Si1- xGe x Layers Using Vacuum-Ultra-Violet Light Radiation in Oxygen (1998) (14)
- Enhanced CMOS performances using substrate strained-SiGe and mechanical strained-Si technology (2006) (14)
- Dark Currents in HgCdTe Photodiodes Passivated with ZnS/CdS (1999) (13)
- Novel solution process for synthesis of CIGS nanoparticles using polyetheramine as solvent (2014) (13)
- High quality GaN-based Schottky barrier diodes (2008) (13)
- 1.54 μm electroluminescence from erbium-doped SiGe light emitting diodes (1998) (13)
- Tunnelling efficiency of n + -InGaN/GaN short period superlattice tunnelling contact layer for nitride-based light emitting diodes (2003) (13)
- Sputtered Indium-Tin-Oxide on p-GaN (2008) (13)
- A novel transparent ohmic contact of indium tin oxide to n-type GaN (2005) (13)
- Activation energy of n-GaN epitaxial layers grown on vicinal-cut sapphire substrates (2005) (13)
- Enhanced Field Emission Properties of Ga-Doped ZnO Nanosheets by using an Aqueous Solution at Room Temperature (2014) (13)
- A novel synthesis of Cu2SnSe3 nanoink prepared via elemental sources and isophorondiamine chelation (2013) (13)
- Contactless electroreflectance study of strained Zn0.79Cd0.21Se/ZnSe double quantum wells (1998) (13)
- ZnO metal-semiconductor-metal ultraviolet photodetectors with Iridium contact electrodes (2007) (13)
- InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers (2004) (13)
- Growth and Characterization of Sparsely Dispersed ZnO Nanowires (2007) (13)
- Practical Passive Filter Synthesis Using Genetic Programming (2005) (13)
- Correlation Between Random Telegraph Noise and $ \hbox{1}/f$ Noise Parameters in 28-nm pMOSFETs With Tip-Shaped SiGe Source/Drain (2012) (13)
- High-Brightness InGaN–GaN Power Flip-Chip LEDs (2009) (13)
- GaN-Based Planar p-i-n Photodetectors With the Be-Implanted Isolation Ring (2013) (13)
- High temperature and high frequency characteristics of AlGaN/GaN MOS-HFETs with photochemical vapor deposition SiO2 layer (2005) (13)
- Optoelectronic Characteristics of UV Photodetector Based on ZnO Nanopillar Thin Films Prepared by Sol-Gel Method (2009) (13)
- Nitride-based green light emitting diodes grown by temperature ramping (2003) (13)
- UV Enhanced Field Emission Properties of Ga-Doped ZnO Nanosheets (2015) (13)
- ${\rm Ga}_{2}{\rm O}_{3}$ Nanowire Photodetector Prepared on ${\rm SiO}_{2}/{\rm Si}$ Template (2013) (12)
- Selective growth of vertical ZnO nanowires on ZnO:Ga∕Si3N4∕SiO2∕Si templates (2005) (12)
- UV Enhanced Indium-Doped ZnO Nanorod Field Emitter (2013) (12)
- Effects of humidity and ultraviolet characteristics on β-Ga2O3 nanowire sensor (2015) (12)
- The Effect of Oxygen Partial Pressure and Annealing Process on the Characteristics of ZnGa2O4 MSM UV Photodetector (2019) (12)
- Design of Dual-Band Bandpass Filter With Simultaneous Narrow- and Wide-Bandwidth and a Wide Stopband (2019) (12)
- Noise Properties of Fe-ZnO Nanorod Ultraviolet Photodetectors (2013) (12)
- AlGaN Metal–Semiconductor–Metal Photodetectors with Low-Temperature AlN Cap Layer and Recessed Electrodes (2010) (12)
- The characteristics of different transparent electrodes on GaN photodetectors (2003) (12)
- High temperature characteristics of ZnO-based MOS-FETs with a photochemical vapor deposition SiO2 gate dielectric (2011) (12)
- Characteristics of InGaN-based light-emitting diodes on patterned sapphire substrates with various pattern heights (2012) (12)
- Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells (2012) (12)
- Improvement of n-ZnO/p-Si photodiodes by embedding of silver nanoparticles (2011) (12)
- InGaP/GaAs/Ge triple‐junction solar cells with ZnO nanowires (2013) (12)
- A macro model of silicon spiral inductor (2002) (12)
- The effects of sintering method on crystalline morphology and photoluminescent properties of BaY2ZnO5:Tb3+ (2011) (12)
- Analysis of angle-dependent unusual transmission in lossy single-negative (SNG) materials (2010) (12)
- A $\hbox{TiO}_{2}$ Nanowire MIS Photodetector With Polymer Insulator (2012) (12)
- Structural and Raman properties of silver-doped ZnO nanorod arrays using electrically induced crystallization process (2015) (12)
- Cu-Al interfacial formation and kinetic growth behavior during HTS reliability test (2019) (11)
- Impact of oxygen annealing on high-k gate stack defects characterized by random telegraph noise (2012) (11)
- Kinetics of persistent photoconductivity in InGaN epitaxial films grown by MOCVD (2005) (11)
- Ultimate Aims and Prospects of Inventions (2015) (11)
- Impact of stress-memorization technique induced-tensile strain on low frequency noise in n-channel metal-oxide-semiconductor transistors (2010) (11)
- A Simple and Effective Method for Designing Frequency Adjustable Balun Diplexer With High Common-Mode Suppression (2015) (11)
- Scattering lifetimes due to interface roughness with large lateral correlation length in AlxGa1¿xN'GaN two-dimensional electron gas (2002) (11)
- Indium–Tin-Oxide Metal–Insulator–Semiconductor GaN Ultraviolet Photodetectors Using Liquid-Phase-Deposition Oxide (2007) (11)
- Magnetooptical Effects in Wave Properties for a Semiconductor Photonic Crystal at Near-Infrared (2012) (11)
- GaN-Based Power Flip-Chip LEDs With an Internal ESD Protection Diode on Cu Sub-Mount (2010) (11)
- Improvement of (11-22) GaN on m-Plane Sapphire With CrN Interlayer by Using Molecular Beam Epitaxy (2011) (11)
- GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells. (2015) (11)
- Growth of ternary ZnCdSe nanowires and the fabrication of ZnCdSe nanowire photodetectors (2010) (11)
- GaN MIS Capacitors with Photo-CVD SiN x O y Insulating Layers (2005) (11)
- IMPROVEMENT IN THERMAL DEGRADATION OF ZnO PHOTODETECTOR BY EMBEDDING SILVER OXIDE NANOPARTICLES (2013) (11)
- AIGaN/GaN two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered SiO 2 layers (2008) (11)
- Room temperature ultraviolet GaN metal-coated nanorod laser (2013) (11)
- Efficiency of GaN/InGaN double-heterojunction photovoltaic cells under concentrated illumination (2013) (11)
- Evolution pathways for the formation of Nano-Cu2ZnSnSe4 absorber materials via elemental sources and isophorondiamine chelation (2013) (11)
- Electron field emission enhancement of hybrid Cu/CuO nanowires fabricated by rapid thermal reduction of CuO nanowires (2015) (11)
- Microstructure and photoluminescent properties of Sr2SiO4:Eu3+ phosphors with various NH4Cl flux concentrations (2012) (10)
- Amorphous InGaZnO Ultraviolet Phototransistors With a Thin Ga2O3 Layer (2014) (10)
- Nitride-based ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and Ir∕Pt contact electrodes (2006) (10)
- ZnSe based white light emitting diode on homoepitaxial ZnSe substrate (2007) (10)
- Triple-Junction GaInP/GaAs/Ge Solar Cells With an AZO Transparent Electrode and ZnO Nanowires (2013) (10)
- Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates (2009) (10)
- Surface plasmon resonance-induced color-selective Au-peapodded silica nanowire photodetectors with high photoconductive gain. (2014) (10)
- Boron-δ doped Si grown by ultra-high vacuum chemical vapor deposition (2003) (10)
- Economical passive filter synthesis using genetic programming based on tree representation (2005) (10)
- Synthesis of Cu2ZnSnSe4 nanocrystals from metal sources using a facile process in isophorondiamine (2013) (10)
- Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN. (2014) (10)
- Align Ag nanorods via oxidation reduction growth using RF-sputtering (2012) (10)
- Ohmic contact to p-ZnSe and p-ZnMgSSe (1999) (10)
- Growth of ultra small self-assembled InGaN nanotips (2004) (10)
- Low Cost Amorphous Silicon Intrinsic Layer for Thin-Film Tandem Solar Cells (2013) (10)
- InN grown on GaN/sapphire templates at different temperatures by MOCVD (2007) (10)
- AlGaInP-Based LEDs With a ${\rm p}^{+}$ -GaP Window Layer and a Thermally Annealed ITO Contact (2011) (10)
- Deposition of SiO2 layers on 4H–SiC by photochemical vapor deposition (2003) (10)
- Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm (2005) (10)
- Numerical Simulation of GaN-Based LEDs With Chirped Multiquantum Barrier Structure (2013) (9)
- AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap layers (2005) (9)
- Chemical Oxide Interfacial Layer for the High-$k$ -Last/Gate-Last Integration Scheme (2012) (9)
- InGaN Metal-Semiconductor-Metal Photodetectors With Aluminum Nitride Cap Layers (2011) (9)
- Tunable Multichannel Filter in a Photonic Crystal Containing Semiconductor Photonic Quantum Well (2012) (9)
- A compact low‐pass filter with ultrabroad stopband characteristics (2015) (9)
- ELECTRICAL DERIVATIVE CHARACTERISTICS OF ION-IMPLANTED AlGaInP/GaInP MULTI-QUANTUM WELL LASERS (1998) (9)
- Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN (2013) (9)
- On the effect of quantum barrier thickness in the active region of nitride-based light emitting diodes (2014) (9)
- High-detectivity GaN MSM photodetectors with low-temperature GaN cap layers and Ir/Pt contact electrodes (2007) (9)
- GaN-Based Dual-Color Light-Emitting Diodes With a Hybrid Tunnel Junction Structure (2016) (9)
- Effect of ZnO buffer layer on the cathodoluminescence of ZnGa2O4/ZnO phosphor screen for FED (2006) (9)
- GaN-Based LEDs With Sapphire Debris Removed by Phosphoric Etching (2012) (9)
- Enhancing P-type Conductivity in Mg-doped GaN Using Oxygen and Nitrogen Plasma Activation (2005) (9)
- AlGaInP-Based LEDs With AuBe-Diffused AZO/GaP Current Spreading Layer (2013) (9)
- Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer (2012) (9)
- Effects of Mechanical Uniaxial Stress on SiGe HBT Characteristics (2006) (9)
- UV Enhanced Field Emission Properties of ZnO Nanosheets With Different NaOH Concentration (2015) (9)
- Study of molecular‐beam epitaxially grown GexSi1−x/Si layers by Raman scattering (1988) (9)
- Fabrication of a novel diplexer using folded open-loop ring resonators and microstrip lines (2014) (8)
- Gold nanoparticle-modulated conductivity in gold peapodded silica nanowires. (2012) (8)
- GaN-Based LEDs With Rough Surface and Selective KOH Etching (2014) (8)
- A comparative study of blue, green and yellow light emitting diode structures grown by metal organic chemical vapor deposition (2006) (8)
- Enhanced Field Emission of ${\rm TiO}_{2}$ Nanowires With UV Illumination (2014) (8)
- GaN-Based LEDs With Omnidirectional Metal Underneath an Insulating ${\rm SiO}_{2}$ Layer (2012) (8)
- Strained Si1−xGex graded channel PMOSFET grown by UHVCVD (2000) (8)
- Applications of advanced nanomaterials to microelectronic and photonic devices (2015) (8)
- Low interface state density AlGaN/GaN MOSHFETs with photochemical vapor deposition SiO2 layers (2003) (8)
- GaN MSM UV Photodetectors with an Al0.82In0.18N Intermediate Layer (2011) (8)
- Nitride-based light emitting diodes with Si-doped In/sub 0.23/Ga/sub 0.77/N/GaN short period superlattice tunneling contact layer (2003) (8)
- Corrosion-induced degradation and its mechanism study of Cu–Al interface for Cu-wire bonding under HAST conditions (2020) (8)
- Crack-Free High-Brightness InGaN ∕ GaN LEDs on Si ( 111 ) with Initial AlGaN Buffer and Two LT-Al Interlayers (2007) (8)
- Synthesis and optical properties of ZnO thin films prepared by SILAR method with ethylene glycol (2013) (8)
- Influence of oxygen on the performance of indium titanium zinc oxide UV sensors fabricated via RF sputtering (2018) (8)
- ${\rm TiO}_{2}$ Nanowires UV Photodetectors With Ir Schottky Contacts (2012) (8)
- Highly ESD-Reliable, Nitride-Based Heterostructure p-i-n Photodetectors with a p-AlGaN Blocking Layer (2008) (8)
- Preparation of a Carbon Doped Tissue-Mimicking Material with High Dielectric Properties for Microwave Imaging Application (2016) (8)
- Failure Mechanism for GaN-Based High-Voltage Light-Emitting Diodes (2014) (8)
- AlxGa1-xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier (2005) (8)
- Microstructure and photoluminescent properties of BaY2ZnO5:Tb3+ phosphors with addition of lithium carbonate (2013) (8)
- Two-step epitaxial lateral overgrowth of GaN (2003) (8)
- 650 nm AlGaInP/GaInP Compressively Strained Multi-Quantum Well Light Emitting Diodes (1998) (8)
- Gan p-i-n photodetectors with an LT-GaN interlayer (2008) (8)
- Effect of coplanar probe pad design on noise figures of 0.35 mu m MOSFETs (2000) (8)
- GaN-Based LEDs With Double Strain Releasing MQWs and Si Delta-Doping Layers (2012) (8)
- The CL emission observation of the InGaN/GaN MQWs V shaped pits with different superlattices underlayers (2008) (8)
- Near-infrared longitudinal plasmon polariton photonic gaps in a semiconductor metamaterial photonic crystal (2015) (8)
- Two-bit-per-cell resistive switching memory device with a Ti/MgZnO/Pt structure (2015) (8)
- A Novel pH Sensor Using Extended-Gate Field-Effect Transistors with Ga 2 O 3 Nanowires Fabricated on SiO 2 /Si Template (2015) (8)
- High transconductance nitride MOSHFETs (2004) (8)
- InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer (2004) (8)
- GaN Schottky Barrier Photodetectors Prepared on Patterned Sapphire Substrate (2010) (8)
- Influence of the Formation of the Second Phase in ZnO ∕ Ga Nanowire Systems (2006) (8)
- AlGaInP/GaP Light-Emitting Diodes Fabricated by Wafer Direct Bonding Technology (1996) (8)
- Fabrication and Photoelectrochemical Behavior of n-Type Cu2ZnSnSe4 Thin-Film Electrodes Prepared via Non-Vacuum Nanoinks Process (2013) (8)
- GaN-Based High-Voltage Light-Emitting Diodes With SU-8 Passivation (2015) (7)
- Comparison studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors application (2012) (7)
- Crystallization effect of Al–Ag alloying layer in PL enhancement of ZnO thin film (2010) (7)
- Laterally Grown n-ZnO Nanowire/p-GaN Heterojunction Light Emitting Diodes (2010) (7)
- Low-Frequency Noise Characteristics for Various -Added -Based 28-nm High- /Metal-Gate nMOSFETs (2013) (7)
- Nitride-Based LEDs With High-Reflectance and Wide-Angle Ag Mirror<formula formulatype="inline"><tex Notation="TeX">${+}$</tex></formula>SiO<formula formulatype="inline"><tex Notation="TeX">$_{2}$</tex></formula>/TiO<formula formulatype="inline"><tex Notation="TeX">$_{2}$</tex></formula> DBR Backside (2011) (7)
- Near-infrared photonic band structure in a semiconductor metamaterial photonic crystal. (2014) (7)
- InN/GaN alternative growth of thick InGaN wells on GaN-based light emitting diodes (2013) (7)
- Cathodoluminescence of a White ZnGa2O4 ∕ ZnO Phosphor Screen (2005) (7)
- Diluted Magnetic Nanosemiconductor: Fe-Doped ZnO Vertically Aligned Nanorod Arrays Grown by Hydrothermal Synthesis (2013) (7)
- White-Light Emission From GaN-Based TJ LEDs Coated With Red Phosphor (2016) (7)
- Electrochromic Device Integrated With GaInP/GaAs/Ge Triple-Junction Solar Cell (2015) (7)
- Dependence of DC Parameters on Layout and Low-Frequency Noise Behavior in Strained-Si nMOSFETs Fabricated by Stress-Memorization Technique (2010) (7)
- High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO2 Layer (2005) (7)
- Ultra small self-organized nitride nanotips (2005) (7)
- Conversion Efficiency Improvement of InGaN/GaN Multiple-Quantum-Well Solar Cells With Ex Situ AlN Nucleation Layer (2015) (7)
- Nitride-based ultraviolet Schottky barrier photodetectors with LT-AlN cap layers (2006) (7)
- Effects of Initial GaN Growth Mode on Patterned Sapphire on the Opto-Electrical Characteristics of GaN-Based Light-Emitting Diodes (2013) (7)
- Effects of thermal annealing on In-induced metastable defects in InGaN films (2007) (7)
- Indium Gallium Oxide Thin Film Transistor for Two-Stage UV Sensor Application (2019) (7)
- 1.3 μm Strain-Compensated InGaAsP Planar Buried Heterostructure Laser Diodes with a TO-Can Package for Optical Fiber Communications (2009) (7)
- Low-Frequency Noise Characteristics of Epitaxial ZnO Photoconductive Sensors (2007) (7)
- ZnO Nanowires Modified with Au Nanoparticles Exhibiting High Field-Emission Performance (2013) (7)
- Aluminum-doped zinc oxide nanorods and methyl alcohol gas sensor application (2020) (7)
- InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers (2004) (7)
- Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction (2013) (7)
- The Output Power Enhancements of GaN-Based Blue Light-Emitting Diodes with Highly Reflective Ag/Cr/Au Trilayer Omnidirectional Reflective Electrode Pads (2009) (7)
- Nanoindentation of vertical ZnO nanowires (2007) (7)
- Observation of spontaneous ordering in the optoelectronic material GaInNP (2004) (7)
- Investigations of ZnO Nanowires and ZnO/p-GaN Heterojunction Diodes Grown by Different Aqueous Solutions Zinc Nitrate and Zinc Acetate (2010) (7)
- Nanostructural characteristics of oxide-cap GaN nanotips by iodine–gallium ions etching (2011) (7)
- Transparent RuOx contacts on n-ZnO (2006) (7)
- InGaN ∕ GaN Multiple-Quantum-Well LEDs with Si-Doped Barriers (2008) (7)
- Well width dependence for novel AlInAsSb/InGaAs double-barrier resonant tunneling diode (2002) (7)
- Effect of surface modification by self-assembled monolayer on the ZnO film ultraviolet sensor (2013) (7)
- ALD TiN Barrier Metal for pMOS Devices With a Chemical Oxide Interfacial Layer for 20-nm Technology Node (2014) (7)
- Enhanced Photoluminescent Properties and Crystalline Morphology of LiBaPO4:Tm3+ Phosphor through Microwave Sintering Method (2016) (7)
- Deposition of SiO2 Films on Strained SiGe Layer by Direct Photo Chemical Vapor Deposition (1995) (7)
- Neodymium-doped GaAs Light-emitting Diodes (1995) (7)
- Probing Surface Structure Quality of ZnO Nanorods by Second Harmonic Generation (2014) (7)
- SiNx nanopillars on AlGaInP-based light-emitting diodes to enhance light extraction using self-assembly ZnO nanomask coating by successive ionic layer adsorption and reaction method (2014) (7)
- Asymmetric resistive switching characteristics of In2O3:SiO2 cosputtered thin film memories (2014) (7)
- AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Low-Temperature-Grown Cap Layers (2007) (7)
- UV-Enhanced 2-D Nanostructured ZnO Field Emitter With Adsorbed Pt Nanoparticles (2018) (7)
- Nitride-Based Dual-Stage MQW LEDs (2007) (6)
- A triband bandpass filter with low loss and high band selectivity using the split‐end asymmetric stepped impedance resonators (2014) (6)
- GaN-Based Green-Light-Emitting Diodes with InN/GaN Growth-Switched InGaN Wells (2013) (6)
- Synthesis and characterization of CZTSe nanoinks using polyetheramine as solvent (2014) (6)
- Temperature dependence of the optical properties on GaInNP (2004) (6)
- Optimized Si-Cap Layer Thickness for Tensile-Strained-Si/ Compressively Strained SiGe Dual-Channel Transistors in 0.13 µm Complementary Metal Oxide Semiconductor Technology (2005) (6)
- Reactive ion etching of Si/SiGe in CF4/Ar and Cl2/BCl3/Ar discharges (1999) (6)
- High electrostatic discharge protection of InGaN/GaN MQW LEDs by using GaN Schottky diodes (2003) (6)
- Ir/Pt Schottky contact oxidation for nitride‐based Schottky barrier diodes (2007) (6)
- Origin of Stress Memorization Mechanism in Strained-Si nMOSFETs Using a Low-Cost Stress-Memorization Technique (2011) (6)
- InGaN/GaN multiple‐quantum‐well dual‐wavelength near‐white light emitting diodes (2003) (6)
- Nonalloyed Ti/indium tin oxide and Ti ohmic contacts to n-type GaN using plasma pre-treatment (2006) (6)
- Characteristics of tantalum-doped silicon oxide-based resistive random access memory (2014) (6)
- Negative bias temperature instability characteristics of strained SiGe pMOSFETs (2007) (6)
- The Bias-Crystallization Mechanism on Structural Characteristics and Electrical Properties of Zn-In-Sn-O Film (2011) (6)
- InGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers (2011) (6)
- Single Crystalline GaN Epitaxial Layer Prepared on Nano-Patterned Si(001) Substrate (2011) (6)
- GaN Nanowire Field Emitters With the Adsorption of Au Nanoparticles (2013) (6)
- GaN Schottky photodiodes with annealed Ir/Pt semi-transparent contacts (2008) (6)
- Crabwise ZnO nanowires: growth and field emission properties. (2007) (6)
- The red shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection currents (2000) (6)
- Photo-assisted thermally oxidized GaAs insulator layers deposited by photo-CVD (2006) (6)
- GaN-Based Power Flip-Chip LEDs With SILAR and Hydrothermal ZnO Nanorods (2015) (6)
- Three-dimensional ZnO nanostructure photodetector prepared with through silicon via technology. (2015) (6)
- Electrical Properties of High-Quality Stacked CdTe/Photo-Enhanced Native Oxide for HgCdTe Passivation (1995) (6)
- Noise Analysis of Nitride-Based Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors with Photo-Chemical Vapor Deposition SiO2 Gate Oxide in the Linear and Saturation Regions (2006) (6)
- Characteristics of $\hbox{Si/SiO}_{2}$ Interface Properties for CMOS Fabricated on Hybrid Orientation Substrate Using Amorphization/Templated Recrystallization (ATR) Method (2011) (6)
- Stability Improvement of Nitrogen Doping on IGO TFTs under Positive Gate Bias Stress and Hysteresis Test (2019) (6)
- Design and Fabrication of a TiO2/SiO2 Dielectric Broadband and Wide-Angle Reflector and Its Application to GaN-Based Blue LEDs (2015) (6)
- Nitride-based multiquantum well p-n junction photodiodes (2003) (6)
- AlGaN/GaN Schottky barrier diodes with multi-MgxNy/GaN buffer (2008) (6)
- Analysis of Dependence of Resonant Tunneling on Static Positive Parameters in a Single-Negative Bilaye (2011) (6)
- Enhanced Extraction and Efficiency of Blue Light Emitting Diodes Prepared using Two-Step-Etched Patterned Sapphire Substrates (2009) (6)
- 10-Gb/s Planar InGaAs P-I-N Photodetectors (2010) (5)
- ZnO nanowire-based UV photodetector. (2010) (5)
- Investigation of interface characteristics in strained-Si nMOSFETs (2009) (5)
- Investigation of Metallized Source/Drain Extension for High-Performance Strained NMOSFETs (2008) (5)
- $\beta\hbox{-}{\rm Ga}_{2}{\rm O}_{3}$ Nanowires-Based Humidity Sensors Prepared on GaN/Sapphire Substrate (2013) (5)
- Low-Frequency Noise Characteristics of GaN Schottky Barrier Photodetectors Prepared With Nickel Annealing (2012) (5)
- Presence of nanosize Au dots on the formation of ohmic contact for the Ni-Au base film to p-GaN (2005) (5)
- MOCVD growth of InGaN/GaN blue light emitting diodes on patterned sapphire substrates (2003) (5)
- GaN metal-semiconductor interface and its applications in GaN and InGaN metal-semiconductor-metal photodetectors (2003) (5)
- InGaN/GaN MQD p n junction photodiodes (2005) (5)
- Improved Performance of 2,3-Dibutoxy-1,4-Phenylene Vinylene Based Polymer Light-Emitting Diodes by Thermal Annealing (2005) (5)
- An (AlxGa1-x)2O3Metal-Semiconductor-Metal VUV Photodetector (2012) (5)
- A p-down InGaN/GaN MQW LED Structure Grown by MOVPE (2001) (5)
- Bandgap Engineered Ultraviolet Photodetectors with Gallium-Zinc-Oxide via Co-Sputtering Method (2018) (5)
- InGaN p-i-n ultraviolet-A band-pass photodetectors (2006) (5)
- Low-frequency noise characterization of amorphous InGaZnO thin-film transistors with double-stack Ga2O3/SiO2 dielectric (2014) (5)
- Characteristics of Strained-Si nMOSFET Using Nickel Silicide Source/Drain (2008) (5)
- ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes (2002) (5)
- Growth of InGaN self-assembled quantum dots and their application to photodiodes (2004) (5)
- GaN-Based LEDs With an HT-AlN Nucleation Layer Prepared on Patterned Sapphire Substrate (2013) (5)
- Effect of Ag film thickness on the crystallization mechanism and photoluminescence properties of ZnO/Ag nanoflower arrays (2012) (5)
- GaN-Based Light-Emitting Diodes on Electrochemically Etched ${\rm n}^{-}$-GaN Template (2013) (5)
- Quaternary AlInGaN-based photodetectors (2008) (5)
- Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors (2009) (5)
- Effects of microcell layout on the performance of GaN-based high-voltage light-emitting diodes (2015) (5)
- Efficiency improvement of GaN-based light-emitting diodes by direct wet etching of indium-tin-oxide layer (2012) (5)
- MOCVD Growth of InN on Si(111) with Various Buffer Layers (2008) (5)
- GaN-based LEDs with Ar plasma treatment (2012) (5)
- Optical and structural properties of Ga-doped ZnO nanorods. (2013) (5)
- GaN Ultraviolet Photodetector with a Low-Temperature AlN Cap Layer (2007) (5)
- Electrical properties of thin gate dielectric grown by rapid thermal oxidation (2000) (5)
- GaN-Based LEDs With Hot/Cold Factor Improved by the Electron Blocking Layer (2014) (5)
- Suppressing efficiency droop using graded AlGaN/InGaN superlattice electron blocking layer for InGaN-based light-emitting diodes (2017) (5)
- High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode (2003) (5)
- Nitride-Based MSM Photodetectors with a HEMT Structure and a Low-Temperature AlGaN Intermediate Layer (2008) (5)
- Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers (2004) (5)
- Study of ultra-thin Ge/Si strained layer superlattice (1989) (5)
- Influence of annealing ambience on TiO2 film ultraviolet photodetector (2017) (5)
- Vertically aligned GaN nanotubes - Fabrication and current image analysis (2006) (5)
- Shell buckling behavior investigation of individual gallium nitride hollow nanocolumn (2006) (5)
- Thermodynamics and kinetics insight into reaction mechanism of Cu2ZnSnSe4 nanoink based on binary metal-amine complexes in polyetheramine-synthesized process (2016) (5)
- A novel waveguide structure to reduce beam divergence and threshold current in GaInP/AlGaInP visible quantum-well lasers (1997) (4)
- A novel miniature dual-mode filter based on modified sierpinski fractal resonator (2008) (4)
- Electron field emitters made of 3-D CuO nanowires on flexible silicon substrate fabricated by heating Cu rods with through silicon: Via process (2016) (4)
- Flicker Noise of AlGaN ∕ GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistor with a Photo-CVD SiO2 Layer (2007) (4)
- Focused Ion Beam Milled InGaN/GaN Multiple Quantum Well Nanopillars (2008) (4)
- Enhanced Current Spreading for GaN-Based Side-View LEDs by Adding an Metallic Stripe Across the Long Side of the Chip (2012) (4)
- High-performance SiGe heterostructure FET grown on silicon-on-insulator (2005) (4)
- Relaxation time of polymer ball type PDLC films (1996) (4)
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- Synthesis of In 2 O 3 Nanowires and Their Gas Sensing Properties (2016) (4)
- Facile chemical method of etching polyimide films for failure analysis (FA) applications and its etching mechanism studies (2014) (4)
- Automated synthesis of passive filter circuits including parasitic effects by genetic programming (2006) (4)
- Erratum to "ZnO-based MIS photodetectors" [135 (2006) 529-533] (DOI: 10.1016/j.sna.2007.06.003) (2008) (4)
- Polymer dispersed liquid crystal display device for projection high definition television application (1994) (4)
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- A ZnO nanowire photodetector with an ir electrode integrated on a triple junction solar cell (2013) (4)
- Piezoreflectance and contactless electroreflectance spectra of an optoelectronic material: GaInNP grown on GaAs substrates (2004) (4)
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- The crystallization characteristics and photoluminescence properties of ZnO/Ag nanoflower arrays (2012) (0)
- Noise Analysis of Nitride-based MOS-HFETs with Photo-chemical Vapor Deposition SiO2 Gate Oxide in the Linear and Saturation Region (2005) (0)
- Homoepitaxial ZnSe MIS Photodetectors Using SiO2 and BST Insulator (2005) (0)
- Optical Transitions in a Self-Assembled Ge Quantum Dot/Si Superlattice Measured by Photoreflectance Spectroscopy (2005) (0)
- Fabrication of MEMS Electronics Devices Based on Fire-Like ZnO Nanosheets by Low-Temperature Hydrothermal Synthesis Technology (2018) (0)
- Fabrication and optical properties of green emission semipolar {1011} InGaN/GaN MQWs selective grown on GaN nanopyramid arrays (2011) (0)
- GaN-based Metal-Semiconductor-Metal Photodetectors Fabricated on Patterned Sapphire Substrates (2012) (0)
- Imapct of SiN on Performance in Novel CMOS Architecture Using Substrate Strained-SiGe and Mechanical Strained-Si Technology (2006) (0)
- Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching (2004) (0)
- Investigation of AlGaN MSM Photodetectors with Low-Temperature AlN Cap and Recess Etched Layers (2009) (0)
- Improved high-k stacks with chemical oxide interfacial layer by DPN/PNA treatment (2015) (0)
- The annealing effects of GaN MIS capacitors with photo-CVD oxide layers (2005) (0)
- AlGaInP-based LEDs with ZnO nanostructures by successive ionic layer adsorption and reaction and hydrothermal methods (2015) (0)
- GaN-based LEDs with flower shape ZnO nanorods by SILAR-based and hydrothermal methods (2015) (0)
- GaN-based LED with embedded air voids array structure (2011) (0)
- Long-wavelength shift of ZnSSe metal-semiconductor-metal light-emitting diodes with high injection currents (2000) (0)
- Low-Frequency Noise Characteristics of GaN Schottky Barrier Photodetectors Prepared With (2012) (0)
- Dark current mechanisms in HgCdTe photodiodes (1998) (0)
- Effect of V/III ratios on surface morphology in a GaSb thin film grown on GaAs substrate by MOCVD (2014) (0)
- ZnSe epitaxial layers and ZnSSe/ZnSe strain layer superlattices grown by molecular beam epitaxy (2002) (0)
- Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO₂ Nanorod-Array Depth Patterned Sapphire Substrate (Special Issue : Solid State Devices and Materials (2)) (2012) (0)
- Influence of Process Flow on the Characteristics of Strained-Si nMOSFETs (2007) (0)
- Effect of Nickel Annealing on GaN-Based Photodetectors (2012) (0)
- High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO2 Layer (2004) (0)
- Studies of Interdiffusion in Ger,,Sin Strained Superlattices Layer (1990) (0)
- Preparation of SiO2 film by direct photo-CVD on strained SiGe layer (1994) (0)
- Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors (2000) (0)
- Improving FET Properties of Semiconducting Single-Walled Carbon Nanotubes by Selective Extraction (2016) (0)
- Noise Analysis of AlGaN/GaN MOS-HFETs with Photochemical-Vapor Deposition SiO2 Layer (2004) (0)
- Effect of Thermal Annealing on Ga2O3-Based Solar-Blind Photodetectors Prepared by Radio-Frequency Magnetron Sputter (2011) (0)
- InGaN/GaN MQW LED with 2DHG Structure (2009) (0)
- Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface (2014) (0)
- Investigating the Photodetectors and pH Sensors of Two-Dimensional MoS2 with Different Substrates (2021) (0)
- High Brightness InGaN/GaN MQW Green Light Emitting Diodes with CART and DBR Structures (2003) (0)
- GaN-Based Light-Emitting Diodes With Staircase (2014) (0)
- Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors (2009) (0)
- A Room-Temperature TiO2-based Ammonia Gas Sensor with Three-Dimensional Through-Silicon-Via Structure (2022) (0)
- GaN-Based Light-Emitting Diodes With Step Graded-Refractive Index $({\hbox{ZnO}}) _{x}({\hbox{SiO}}_{2})_{1-x}$ Micropillar Array (2013) (0)
- Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface (2014) (0)
- Effects of nitrogen incorporation on the electronic properties of GaxIn1-xNyAs1-y epilayers probed by persistent photoconductivity (2006) (0)
- High Indium Content InGaN/GaN Multiple Quantum Well Yellowish Green Light Emitting Diodes (2002) (0)
- Effect of different partial pressure on Ga-doped ZnO UV photodetectors by RF sputtering (2018) (0)
- Optically Pumped Lasing in Gallium Nitride Nanorods Structure (2012) (0)
- GaN-Based LEDs with a Mirror Structure and an Insulating Layer (2012) (0)
- Investigations of low-frequency noise of GaN-based heterostructure field-effect transistors (2003) (0)
- Two-step etching mechanism of Ag-Si nanostructure with various Ag nanoshape depositions (2009) (0)
- Investigation of Impact Ionization in Strained-Si nMOSFETs (2007) (0)
- Ohmic contacts to GaN with rapid thermal annealing (2000) (0)
- Back Cover: Investigation of Ni/Ag contact to p‐GaN with an O2 plasma treatment and its application to GaN‐based LEDs (Phys. Status Solidi A 8/2012) (2012) (0)
- A New Transparent Planar Reflector Antennas for Satellite DTV Applications (2019) (0)
- Fabrication and Characterization of Three Dimensional Semipolar {10-11} and Nonpolar {10-10} Core-shell InGaN/GaN Multi-Facet Quantum Wells Optoelectronics Devices (2013) (0)
- A Ta2O5/Zinc-Indium-Tin-Oxide Thin Film Transistor Solar Blind Photodetector (2012) (0)
- Amorphous Indium-Gallium-Oxide (2015) (0)
- High Responsivity in GaN Ultraviolet Photodetector Achieved by Growing on a Periodic Trapezoid Column-Shape Patterned Sapphire Substrate (2016) (0)
- Device characteristics of GaAs-based heterojunction bipolar transistors using an InGaAs/GaAsP strain-compensated layer as a base material (2004) (0)
- A High-Responsivity GaN Nanowire (2011) (0)
- Effect of annealing time on Si/SiO2 interface property for CMOS fabricated on hybrid orientation substrate with ATR method (2011) (0)
- Enhancement of output power for GaN-based LEDs by treatments of Ar plasma on p-GaN surface (2013) (0)
- Investigation of Efficiency Droop for UV-LED with N-type AlGaN Layer (2011) (0)
- GaN Metal-Semiconductor-Metal Photodetectors with an un-activated Mg-doped GaN Cap Layer (2007) (0)
- Ohmic contacts and reactive ion beam etching for p-type GaN (2000) (0)
- AlGaN MSM Photodetectors with SiN/GaN double buffer layers (2007) (0)
- Investigation of the effect of nitride-based LEDs fabricated using hole injection layer at different growth temperatures (2016) (0)
- Frequency Response of a Ferroelectric Material in Double-Negative Region (2014) (0)
- Origin of Enhanced Impact Ionization in Strained-SiGe pMOSFETs (2008) (0)
- SiGe doped-channel field-effect transistor (2007) (0)
- Novel top-down Cu filling of through silicon via (TSV) in 3-D integration (2016) (0)
- Fabrication of SiGe Multi-Doped Channel MESFETs (2005) (0)
- Investigations of Wafer-bonded (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes (1998) (0)
- Effects of last barrier thickness on the hot–cold factor of GaN-based light-emitting diodes (2015) (0)
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What Schools Are Affiliated With Shoou‐jinn Chang?
Shoou‐jinn Chang is affiliated with the following schools:
