Shunri Oda
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Researcher ORCID ID = 0000-0002-8009-2077
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Computer Science
Shunri Oda's Degrees
- PhD Computer Science University of Tokyo
- Masters Computer Science University of Tokyo
- Bachelors Computer Science University of Tokyo
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Why Is Shunri Oda Influential?
(Suggest an Edit or Addition)According to Wikipedia, Shunri Oda from the Tokyo Institute of Technology, Tokyo, Japan was named Fellow of the Institute of Electrical and Electronics Engineers in 2012 for contributions to silicon quantum dot devices.
Shunri Oda's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- PHENIX Collaboration (2009) (732)
- A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9% (2018) (368)
- A>99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise (2017) (296)
- Suppression pattern of neutral pions at high transverse momentum in Au + Au collisions at sqrt[sNN]=200 GeV and constraints on medium transport coefficients. (2008) (253)
- Quadrupole anisotropy in dihadron azimuthal correlations in central d+Au collisions at √(s(NN))=200 GeV. (2013) (249)
- Measurements of higher order flow harmonics in Au+Au collisions at √s(NN)=200 GeV. (2011) (223)
- Scaling properties of azimuthal anisotropy in Au+Au and Cu+Cu Collisions at sqrt[s NN]=200 GeV. (2006) (219)
- Measurement of neutral mesons in p+p collisions at √s=200GeV and scaling properties of hadron production (2010) (196)
- J/ψ suppression at forward rapidity in Au + Au collisions at √sNN=200 GeV (2011) (176)
- Identified charged hadron production in p + p collisions at √ s = 200 and 62.4 GeV (2011) (169)
- A fault-tolerant addressable spin qubit in a natural silicon quantum dot (2016) (167)
- Measurement of Long-Range Angular Correlation and Quadrupole Anisotropy of Pions and (Anti)Protons in Central d+Au Collisions at sqrt[s_{NN}]=200 GeV. (2014) (138)
- Spectra and ratios of identified particles in Au+Au and d+Au collisions at √sNN=200 GeV (2013) (131)
- Photoluminescence mechanism in surface-oxidized silicon nanocrystals (1997) (131)
- A flexible and wearable terahertz scanner (2016) (129)
- Measurement of high-pT single electrons from heavy-flavor decays in p + p collisions at square root of s = 200 GeV. (2006) (128)
- Measurements of Elliptic and Triangular Flow in High-Multiplicity 3He+Au Collisions at √(s(NN))=200 GeV. (2015) (127)
- Electron trapping, storing, and emission in nanocrystalline Si dots by capacitance–voltage and conductance–voltage measurements (2003) (115)
- Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma (1997) (114)
- Observation of direct-photon collective flow in Au + Au collisions at √s(NN)] = 200 GeV. (2012) (102)
- Centrality dependence of low-momentum direct-photon production in Au+Au collisions at sNN=200 GeV (2014) (102)
- A hadron blind detector for the PHENIX experiment at RHIC (2004) (99)
- J/psi production versus transverse momentum and rapidity in p+p collisions at square root s=200 GeV. (2006) (96)
- Neutral pion production with respect to centrality and reaction plane in Au plus Au collisions at root S-NN=200 GeV (2012) (96)
- Heat capacity of oxide glasses at high temperature region (2003) (92)
- Nuclear modification of ψ', χc, and J/ψ production in d+Au collisions at sqrt[s(NN)]=200 GeV. (2013) (89)
- Nanocrystalline silicon electron emitter with a high efficiency enhanced by a planarization technique (2002) (88)
- Transverse energy production and charged-particle multiplicity at midrapidity in various systems from $\sqrt{s_{NN}}=7.7$ to 200 GeV (2015) (86)
- Cold-nuclear-matter effects on heavy-quark production in d+Au collisions at sqrt[S(NN)]=200 GeV. (2012) (85)
- Cold nuclear matter effects on J/ψ yields as a function of rapidity and nuclear geometry in d+A collisions at sqrt[s(NN)]=200 GeV. (2010) (84)
- Highly Oriented ZnO Films Prepared by MOCVD from Diethylzinc and Alcohols (1985) (82)
- Deviation from quark number scaling of the anisotropy parameter v 2 of pions, kaons, and protons in Au+Au collisions at √s NN=200 GeV (2012) (80)
- Transverse-momentum dependence of the J/ψ nuclear modification in d+Au collisions at √sNN=200 GeV (2012) (80)
- Suppression of back-to-back hadron pairs at forward rapidity in d+Au collisions at √s(NN)=200 GeV. (2011) (78)
- J/psi production in sqrt s_NN=200 GeV Cu+Cu collisions. (2007) (74)
- Electron Transport in Nanocrystalline Si Based Single Electron Transistors (2000) (73)
- ZnS blue‐light‐emitting diodes with an external quantum efficiency of 5×10−4 (1975) (73)
- Cold-nuclear-matter effects on heavy-quark production at forward and backward rapidity in d + Au collisions at √sNN = 200 GeV. (2013) (71)
- Observation of direct-photon collective flow in sqrt(s_NN)=200 GeV Au+Au collisions (2011) (70)
- Azimuthally anisotropic emission of low-momentum direct photons in Au + Au collisions at sNN =200 GeV (2015) (70)
- Measurement of transverse-single-spin asymmetries for midrapidity and forward-rapidity production of hadrons in polarized p plus p collisions at root s=200 and 62.4 GeV (2013) (69)
- Charge injection and trapping in silicon nanocrystals (2005) (67)
- Centrality categorization for Rp(d)+A in high-energy collisions (2013) (66)
- Nuclear modification factors of phi mesons in d plus Au, Cu plus Cu, and Au plus Au collisions at root s(NN)=200 GeV (2010) (64)
- Preparation of Polycrystalline Silicon by Hydrogen-Radical-Enhanced Chemical Vapor Deposition (1987) (64)
- Emission lifetime of polarizable charge stored in nano-crystalline Si based single-electron memory (2001) (62)
- Diagnostic Study of VHF Plasma and Deposition of Hydrogenated Amorphous Silicon Films (1990) (61)
- Azimuthal anisotropy of π0 production in Au+Au collisions at √sNN=200GeV: Path-length dependence of jet quenching and the role of initial geometry (2010) (59)
- Quantum confinement energy in nanocrystalline silicon dots from high-frequency conductance measurement (2003) (59)
- Gluon-spin contribution to the proton spin from the double-helicity asymmetry in inclusive pi0 production in polarized p+p collisions at [sqrt]s=200 GeV. (2008) (58)
- Centrality-Dependent Modification of Jet-Production Rates in Deuteron-Gold Collisions at √[s(NN)]=200 GeV. (2015) (57)
- Transition in yield and azimuthal shape modification in dihadron correlations in relativistic heavy ion collisions. (2010) (53)
- Medium modification of jet fragmentation in Au+Au collisions at √[s(NN)]=200 GeV measured in direct photon-hadron correlations. (2012) (53)
- Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots (2006) (51)
- Magnetic field dependence of Pauli spin blockade: A window into the sources of spin relaxation in silicon quantum dots (2011) (51)
- Growth of Amorphous and Crystalline Silicon by HR-CVD (Hydrogen Radical Enhanced CVD) (1987) (50)
- Search for dark photons from neutral meson decays in p+p and d+ Au collisions at sNN =200 GeV (2015) (49)
- System size and energy dependence of jet-induced hadron pair correlation shapes in Cu+Cu and Au+Au collisions at square root sNN=200 and 62.4 GeV. (2006) (47)
- Measurement of higher cumulants of net-charge multiplicity distributions in Au+Au collisions at √sNN = 7.7-200 GeV (2015) (47)
- Hopping conduction in size-controlled Si nanocrystals (2006) (47)
- Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing (1997) (44)
- Measurement of Density Modification of Laser-Fusion Plasmas (1977) (44)
- Onset of pi(0) Suppression Studied in Cu plus Cu Collisions at root s(NN)=22.4, 62.4, and 200 GeV (2008) (44)
- Study of structural and optical properties of nanocrystalline silicon embedded in SiO2 (2000) (43)
- Ground and excited state charmonium production in p+p collisions at √s=200GeV (2011) (42)
- Frequency effects in processing plasmas of the VHF band (1993) (40)
- Probing electron charging in nanocrystalline Si dots using Kelvin probe force microscopy (2004) (39)
- Selective Etching of Hydrogenated Amorphous Silicon by Hydrogen Plasma (1994) (38)
- Toward long-term retention-time single-electron-memory devices based on nitrided nanocrystalline silicon dots (2004) (37)
- Nuclear-Modification Factor for Open-Heavy-Flavor Production at Forward Rapidity in Cu+Cu Collisions at sqrt(s_NN)=200 GeV (2012) (37)
- Charge storage in nitrided nanocrystalline silicon dots (2005) (36)
- Preparation of Microcrystalline Silicon Films by Very-High-Frequency Digital Chemical Vapor Deposition (1992) (36)
- Electron transport in a single silicon quantum structure using a vertical silicon probe (2000) (36)
- A new emission band in self-activated ZnS (1979) (36)
- 3-D Design and Analysis of Functional NEMS-gate MOSFETs and SETs (2007) (36)
- NeoSilicon materials and silicon nanodevices (2003) (36)
- Direct photon production in d+Au collisions at root s(NN)=200 GeV (2012) (35)
- Elliptic and hexadecapole flow of charged hadrons in Au+Au collisions at sq.rt(s(NN))=200 GeV. (2010) (35)
- Thermal-aware device design of nanoscale bulk/SOI FinFETs: Suppression of operation temperature and its variability (2011) (34)
- Enhanced Dielectric Properties in SrTiO3/BaTiO3 Strained Superlattice Structures Prepared by Atomic-Layer Metalorganic Chemical Vapor Deposition (1999) (34)
- Tip-enhanced Raman mapping of a single Ge nanowire (2011) (33)
- Production of omega mesons in p plus p, d plus Au, Cu plus Cu, and Au plus Au collisions at root s(NN)=200 GeV (2011) (33)
- Evidence of storing and erasing of electrons in a nanocrystalline-Si based memory device at 77 K (2002) (31)
- Inclusive cross section and single transverse spin asymmetry for very forward neutron production in polarized p+p collisions at √s=200 GeV (2012) (31)
- Construction of amorphous silicon ISFET (1989) (30)
- Cross section and double helicity asymmetry for eta mesons and their comparison to neutral pion production in p+p collisions at sqrt(s)=200 GeV (2010) (30)
- Room temperature single electron charging in single silicon nanochains (2008) (30)
- System-size dependence of open-heavy-flavor production in nucleus-nucleus collisions at sNN =200 GeV (2013) (29)
- The Role of Hydrogen Radicals in the Growth of a-Si and Related Alloys (1986) (29)
- Nanocrystalline silicon formation in a SiH4 plasma cell (1996) (28)
- Cross section and transverse single-spin asymmetry of η mesons in p↑+p collisions at s√=200 GeV at forward rapidity (2014) (28)
- Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift (2018) (27)
- Beam Energy and Centrality Dependence of Direct-Photon Emission from Ultrarelativistic Heavy-Ion Collisions. (2018) (27)
- Conducting-tip atomic force microscopy for injection and probing of localized charges in silicon nanocrystals (2003) (27)
- Measurement of the higher-order anisotropic flow coefficients for identified hadrons in Au$+$Au collisions at $\sqrt{s_{_{NN}}}$ = 200 GeV (2014) (27)
- Influence of nanocrystal size on the transport properties of Si nanocrystals (2008) (27)
- Characterization and suppression of low-frequency noise in Si/SiGe quantum point contacts and quantum dots (2013) (26)
- Preparation of a-Si:H Films by VHF Plasma CVD (1988) (26)
- Observation of the single electron charging effect in nanocrystalline silicon at room temperature using atomic force microscopy (1998) (26)
- Epitaxial Growth of YBaCuO Films on Sapphire at 500°C by Metalorganie Chemical Vapor Deposition (1989) (26)
- Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors (2016) (25)
- Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5 K (2009) (25)
- Carrier conduction in a Si-nanocrystal-based single-electron transistor-I. Effect of gate bias (2000) (25)
- An electronic synaptic device based on HfO2TiOx bilayer structure memristor with self-compliance and deep-RESET characteristics (2018) (25)
- Measurement of gamma(1S+2S+3S) production in p plus p and Au plus Au collisions at root sNN=200 GeV (2014) (24)
- Heavy-flavor electron-muon correlations in p+p and d+Au collisions at sNN =200 GeV (2013) (24)
- Preparation of Nanocrystalline Silicon by Pulsed Plasma Processing (1994) (24)
- Event structure and double helicity asymmetry in jet production from polarized p+p collisions at √s=200GeV (2010) (23)
- Single Electron Memory Devices Based on Plasma-Derived Silicon Nanocrystals (2000) (23)
- Lithographically defined few-electron silicon quantum dots based on a silicon-on-insulator substrate (2015) (23)
- Vapor–Liquid–Solid Growth of Small- and Uniform-Diameter Silicon Nanowires at Low Temperature from Si2H6 (2008) (22)
- Production of ω mesons in p + p , d + Au , Cu + Cu , and Au + Au collisions at √ sN N = 200 GeV (2011) (22)
- Direct photon production in p plus p collisions at root s=200 GeV at midrapidity (2012) (22)
- Systematic study of charged-pion and kaon femtoscopy in Au + Au collisions at s NN =200 GeV (2015) (22)
- Preparation and characterization of low-resistivity ZnS for blue LED's (1977) (21)
- Beam-energy and system-size dependence of the space-time extent of the pion emission source produced in heavy ion collisions (2014) (21)
- Hydrogen radical assisted chemical vapor deposition of ZnSe (1986) (21)
- Systematic Study of Azimuthal Anisotropy in Cu$+$Cu and Au$+$Au Collisions at $\sqrt{s_{_{NN}}} = 62.4$ and 200~GeV (2014) (20)
- Room Temperature Single-Electron Narrow-Channel Memory with Silicon Nanodots Embedded in SiO2 Matrix (2000) (20)
- Ballistic transport in silicon vertical transistors (2002) (20)
- Three-Dimensional Numerical Analysis of Switching Properties of High-Speed and Nonvolatile Nanoelectromechanical Memory (2007) (20)
- Measurement of neutral mesons in p þ p collisions at ffiffi s p 1⁄4 200 GeV and scaling properties of hadron production (2011) (20)
- Transverse momentum dependence of eta meson suppression in Au+Au collisions at sq root(s{sub NN})=200 GeV (2010) (20)
- Characteristics of multilevel storage and switching dynamics in resistive switching cell of Al2O3/HfO2/Al2O3 sandwich structure (2018) (20)
- Vapor-solid-solid radial growth of Ge nanowires (2009) (20)
- Measurement of Υ(1S+2S+3S) production in p+p and Au + Au collisions at sqrt[s_{NN}]=200 GeV (2015) (20)
- The role of hydrogen radicals in nucleation and growth of nanocrystalline silicon (1993) (19)
- Photoluminescence Study of Self-Limiting Oxidation in Nanocrystalline Silicon Quantum Dots (2001) (19)
- Azimuthal-angle dependence of charged-pion-interferometry measurements with respect to second- and third-order event planes in Au+Au collisions at √[S(NN)]=200 GeV. (2014) (19)
- Blue emission from forward-biased ZnS diodes (1976) (19)
- Formation Mechanism of 100-nm-Scale Periodic Structures in Silicon Using Magnetic-Field-Assisted Anodization (2008) (19)
- Properties of a-Si based alloys prepared from fluorides and hydrogen (1985) (19)
- Quantum dots in single electron transistors with ultrathin silicon-on-insulator structures (2015) (19)
- Scaling properties of fractional momentum loss of high- pT hadrons in nucleus-nucleus collisions at √sNN from 62.4 GeV to 2.76 TeV (2015) (19)
- Electrophotographic studies of glow-discharge amorphous silicon (1981) (19)
- Conductance quantization in nanoscale vertical structure silicon field-effect transistors with a wrap gate (2000) (19)
- Silicon-on-insulator-based radio frequency single-electron transistors operating at temperatures above 4.2 K. (2008) (19)
- Properties of Metalorganic Precursors for Chemical Vapor Deposition of Oxide Superconductors (1990) (18)
- High-density assembly of nanocrystalline silicon quantum dots (2006) (18)
- Self-Heating Effects and Analog Performance Optimization of Fin-Type Field-Effect Transistors (2013) (18)
- Electrical properties of SrTiO3/BaTiO3 strained superlattice films prepared by atomic layer metallorganic chemical vapor deposition (2000) (18)
- Measurements of $e^+e^-$ pairs from open heavy flavor in $p$+$p$ and $d$+$A$ collisions at $\sqrt{s_{NN}}=200$ GeV (2017) (18)
- Design Optimization of NEMS Switches for Suspended-Gate Single-Electron Transistor Applications (2009) (18)
- Silicon-based single-electron memory using a multiple-tunnel junction fabricated by electron-beam direct writing (1999) (17)
- High quality a-Si:H films and interfaces prepared by VHF plasma CVD (1991) (17)
- Two-Gate Transistor for the Study of Si/SiO2 Interface in Silicon-on-Insulator Nano-Channel and Nanocrystalline Si Memory Device (2000) (17)
- Electron transport through silicon serial triple quantum dots (2009) (17)
- Back-action-induced excitation of electrons in a silicon quantum dot with a single-electron transistor charge sensor (2015) (17)
- Visible Electroluminescence from Spherical-Shaped Silicon Nanocrystals (2008) (17)
- Voltage-limitation-free analytical single-electron transistor model incorporating the effects of spin-degenerate discrete energy states (2008) (17)
- Atomic Layer-by-Layer MOCVD of Complex Metal Oxides and In Situ Process Monitoring (2001) (17)
- Preparation of Nanocrystalline Silicon Quantum Dots by Pulsed Plasma Processes with High Deposition Rates (1999) (16)
- Control of Electrostatic Coupling Observed for Silicon Double Quantum Dot Structures (2008) (16)
- Υ ( 1 S + 2 S + 3 S ) production in d + Au and p + p collisions at √ sN N = 200 GeV and cold-nuclear-matter effects (2013) (16)
- Dual Function of Single Electron Transistor Coupled with Double Quantum Dot: Gating and Charge Sensing (2013) (16)
- Azimuthal correlations of electrons from heavy-flavor decay with hadrons in p+p and Au+Au collisions at √ sNN = 200 GeV (2010) (16)
- Integration of Tunnel-Coupled Double Nanocrystalline Silicon Quantum Dots with a Multiple-Gate Single-Electron Transistor (2007) (16)
- Self-aligned double-gate single-electron transistor derived from 0.12-μm-scale electron-beam lithography (2001) (15)
- Development of a time projection chamber using gas electron multipliers (GEM-TPC) (2005) (15)
- Cross section for $b\bar{b}$ production via dielectrons in d$+$Au collisions at $\sqrt{s_{_{NN}}}=200$ GeV (2014) (15)
- Bottom-up approach to silicon nanoelectronics (2007) (15)
- Preparation of nanocrystalline silicon quantum dot structure by a digital plasma process (1997) (15)
- Multifrequency x‐ray backlighting of laser‐imploded targets (1980) (15)
- Charge storage and electron/light emission properties of silicon nanocrystals (2007) (14)
- Germanium nanowires with 3-nm-diameter prepared by low temperature vapour-liquid-solid chemical vapour deposition. (2011) (14)
- Charge sensing and spin-related transport property of p-channel silicon quantum dots (2017) (14)
- Role of Hydrogen Radical Treatment in Nucleation of Nanocrystalline Silicon (1992) (14)
- Experimental Observation of Enhanced Electron–Phonon Interaction in Suspended Si Double Quantum Dots (2010) (14)
- Demonstration of spin valve effects in silicon nanowires (2011) (14)
- Key capacitive parameters for designing single-electron transistor charge sensors (2012) (14)
- Comparison of the space-time extent of the emission source in $d$$+$Au and Au$+$Au collisions at $\sqrt{s_{{NN}}}=200$ GeV (2014) (14)
- Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors (2011) (14)
- Preparation Method and Optoelectrical Properties of a-Se/CdxSe1-x Multilayer Films (1987) (13)
- Electronic States In Glow-Discharge a-SiGex:H:(F) Alloys (1986) (13)
- Atomic Layer-by-Layer Metal-Organic Chemical Vapor Deposition of SrTiO3 Films with a Very Smooth Surface (1998) (13)
- gamma (1S+2S+3S) production in d plus Au and p plus p collisions at root s(NN)=200 GeV and cold-nuclear-matter effects (2012) (13)
- Measurement of direct photon v_2 in sqrt(s_NN)=200 GeV Au+Au collisions (2011) (13)
- The role of the blocking structure in hydrogenated amorphous silicon vidicon targets (1981) (13)
- Azimuthal anisotropy of π 0 and η mesons in Au + Au collisions at √ s NN = 200 GeV (2013) (13)
- Undoped and catalyst-free germanium nanowires for high-performance p-type enhancement-mode field-effect transistors (2016) (13)
- Vertical-type amorphous-silicon MOSFET ICs (1988) (12)
- Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge (2008) (12)
- Position-Controllable Ge Nanowires Growth on Patterned Au Catalyst Substrate (2009) (12)
- Low-momentum direct-photon measurement in Cu + Cu collisions at sNN=200GeV (2018) (12)
- Growth Mechanism of Microcrystalline Silicon Prepared by Alternating Deposition of Amorphous Silicon and Hydrogen Radical Annealing (1992) (12)
- J/ψ production at RHIC-PHENIX (2008) (12)
- Atomic layer-by-layer epitaxy of oxide superconductors by MOCVD (1997) (12)
- Control of threshold voltage by gate metal electrode in molybdenum disulfide field-effect transistors (2017) (12)
- Design of Band Potential with a-SixGe1-x:H(F) Alloys (1987) (12)
- Atomic layer controlled metalorganic chemical vapor deposition of superconducting YBa2Cu3Ox films (1994) (12)
- M ay 2 01 2 Direct-Photon Production in p + p Collisions at √ s = 200 GeV at Midrapidity (2021) (12)
- Suppression of away-side jet fragments with respect to the reaction plane in Au + Au collisions at √sNN=200 GeV (2010) (12)
- Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System (2011) (12)
- Search for dark photons from neutral meson decays in $p$$+$$p$ and $d$$+$Au collisions at $\sqrt{s_{_{NN}}}$=200 GeV (2014) (11)
- Conduction Bottleneck in Silicon Nanochain Single Electron Transistors Operating at Room Temperature (2012) (11)
- Vidicon target of a p‐i‐n structure using a‐Si:H (1980) (11)
- Cross section for b ¯ b production via dielectrons in d + Au collisions at (2015) (11)
- Electron transport in surface oxidized Si nanocrystal ensembles with thin film transistor structure (2009) (11)
- Fabrication of Nanocrystalline Si by SiH 4 Plasma Cell (1995) (11)
- GaAs/AlGaAs field-effect transistor for tunable terahertz detection and spectroscopy with built-in signal modulation (2013) (11)
- Electric Properties of Coplanar High- TC Superconducting Field-Effect Devices (1998) (11)
- Scaling Analysis of Nanoelectromechanical Memory Devices (2010) (11)
- Methodology for Evaluating Operation Temperatures of Fin-Type Field-Effect Transistors Connected by Interconnect Wires (2013) (11)
- Azimuthal anisotropy of $\pi^0$ and $\eta$ mesons in Au + Au collisions at $\sqrt{{s}_{NN}} =$ 200 GeV (2013) (11)
- Self-limiting adsorption and in situ optical monitoring for atomic layer epitaxy of oxide superconductors layer epitaxy of oxide superconductors (1993) (10)
- Fabrication and characterization of p-channel Si double quantum dots (2014) (10)
- Design of multiple layered a-Si:H(F)/a-SiGex:H(F) films for enhancement in photoresponse in the near-infrared spectrum (1986) (10)
- Photoluminescence of Nanocrystalline Silicon Quantum Dots with Various Sizes and Various Phosphorus Doping Concentrations Prepared by Very High Frequency Plasma (2012) (10)
- Experimental Study on Deformation Potential ( ${D}_{{{ac}}}$ ) in MOSFETs: Demonstration of Increased ${D}_{{{ac}}}$ at MOS Interfaces and Its Impact on Electron Mobility (2016) (10)
- High p_T Direct Photon and pi^0 Triggered Azimuthal Jet Correlations in sqrt(s)=200 GeV p+p Collisions (2010) (10)
- Erratum: Cold nuclear matter effects on J/ψ production as constrained by deuteron-gold measurements at sNN=200 GeV (Physical Review C - Nuclear Physics (2008) 77 (024912)) (2009) (10)
- Preparation of Highly Photoconductive a-SiGex from Fluorides by Controlling Reactions with Atomic Hydrogen (1986) (10)
- Materials Research Society Symposium Proceedings: Preface (2010) (10)
- Growth of Narrow and Straight Germanium Nanowires by Vapor–Liquid–Solid Chemical Vapor Deposition (2011) (10)
- Reproducible Growth of Metalorganic Chemical Vapor Deposition Derived YBa2Cu3Ox Thin Films Using Ultrasonic Gas Concentration Analyzer (1999) (10)
- Designing New Materials with Amorphous Semiconductors–Structure and Electrical Properties of Multiply Stacked a-Si/a-SiGex Layers– (1986) (10)
- Carrier transport by field enhanced thermal detrapping in Si nanocrystals thin films (2009) (10)
- Hole Transport in a-Si:H(F) Prepared by Hydrogen-Radical-Assisted Chemical Vapor Deposition (1986) (10)
- Measurement of K-S(0) and K*(0) in p plus p, d plus Au, and Cu plus Cu collisions at root s(NN)=200 GeV (2014) (9)
- Electron-beam direct writing using RD2000N for fabrication of nanodevices (2000) (9)
- Nanoscale Silicon Devices (2015) (9)
- Experimental evidence of increased deformation potential at MOS interface and its impact on characteristics of ETSOI FETs (2011) (9)
- Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir–Blodgett Technique (2008) (9)
- Influence of the crystal orientation of substrate on low temperature synthesis of silicon nanowires from Si2H6 (2008) (9)
- Hole Transport in Silicon Thin Films with Variable Hydrogen Content (1987) (9)
- Operation of nanocrystalline-silicon-based few-electron memory devices in the light of electron storage, ejection, and lifetime characteristics (2003) (9)
- Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade (2011) (9)
- Cross section and transverse single-spin asymmetry of η mesons in p ↑ þ p collisions at ffiffi s p 1⁄4 200 GeV at forward rapidity (2014) (9)
- Low-voltage cathodoluminescence of ZnS single crystals (1978) (9)
- Physically defined triple quantum dot systems in silicon on insulator (2019) (9)
- Observation and coherent control of interface-induced electronic resonances in a field-effect transistor. (2017) (9)
- Surface passivation of germanium nanowires using Al2O3 and HfO2 deposited via atomic layer deposition technique (2014) (9)
- Field-dependant hopping conduction in silicon nanocrystal films (2008) (9)
- Measurement of two-particle correlations with respect to second- and third-order event planes in Au + Au collisions at sNN=200 GeV (2018) (9)
- Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation (2008) (9)
- $\phi$ meson production in $d$$+$Au collisions at $\sqrt{s_{_{NN}}}=200$ GeV (2015) (8)
- In situ real-time spectroscopic ellipsometry study of HfO2 thin films grown by using the pulsed-source metal-organic chemical-vapor deposition (2005) (8)
- Current fluctuations in three-dimensionally stacked Si nanocrystals thin films (2010) (8)
- Impact of channel constrictions on the formation of multiple tunnel junctions in heavily-doped silicon single electron transistors (2008) (8)
- Systematic study of nuclear effects in $p$$+$Al, $p$$+$Au, $d$$+$Au, and $^{3}$He$+$Au collisions at $\sqrt{s_{_{NN}}}=200$ GeV using $\pi^0$ production (2021) (8)
- Measures against increased environmental radiation dose by the TEPCO Fukushima Dai-ichi NPP accident in some local governments in the Tokyo metropolitan area: focusing on examples of both Kashiwa and Nagareyama cities in Chiba prefecture. (2012) (8)
- Size-Dependent Structural Characterization of Silicon Nanowires (2008) (8)
- New Design Concept and Fabrication Process for Three-Dimensional Silicon Photonic Crystal Structures (2007) (8)
- Electrical properties of a CdTe/InSb hetero metal‐insulator‐semiconductor structure (1988) (8)
- Azimuthal-angle dependence of charged-pion-interferometry measurements with respect to 2$^{\rm nd}$- and $3^{\rm rd}$-order event planes in Au$+$Au collisions at $\sqrt{s_{_{NN}}}=200$ GeV (2014) (8)
- Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching (2011) (8)
- Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy (2015) (8)
- Detection of variable tunneling rates in silicon quantum dots (2011) (8)
- Fabrication of Nanostructure by Anisotropic Wet Etching of Silicon (1988) (8)
- Suspended Quantum Dot Fabrication on a Heavily Doped Silicon Nanowire by Suppressing Unintentional Quantum Dot Formation (2010) (8)
- C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure (2001) (7)
- Cross sections and double-helicity asymmetries of midrapidity inclusive charged hadrons in p+ p collisions at sqrt (s)= 62.4 GeV (2012) (7)
- Retardation in the Oxidation Rate of Nanocrystalline Silicon Quantum Dots (2000) (7)
- Growth of Ge–Si nanowire heterostructures via chemical vapor deposition (2011) (7)
- Study of Single-Charge Polarization on a Pair of Charge Qubits Integrated Onto a Silicon Double Single-Electron Transistor Readout (2008) (7)
- Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1 1018 × cm-3 and silicon-on-insulator thickness of less than 10 nm (2011) (7)
- Developments of a Novel Impedance Matching Circuit for Electrically Small Antennas (2006) (6)
- The residual voltage in fast electrophotography of a-SiHx (1982) (6)
- Experimental Study of Two-Terminal Resistive Random Access Memory Realized in Mono- and Multilayer Exfoliated Graphene Nanoribbons (2013) (6)
- Grain-Size Control of Nanocrystalline Silicon by Pulsed Gas Plasma Process (1996) (6)
- Pulsed-Source MOCVD of High-k Dielectric Thin Films with in situ Monitoring by Spectroscopic Ellipsometry (2003) (6)
- Measurement of emission-angle anisotropy via long-range angular correlations with high- pT hadrons in d+Au and p+p collisions at sNN=200 GeV (2017) (6)
- Coupled quantum dots on SOI as highly integrated Si qubits (2016) (6)
- Enhanced Production of Direct Photons in Au þ Au Collisions at ffiffiffiffiffiffiffiffi sNN p 1⁄4 200 GeV and Implications for the Initial Temperature (2010) (6)
- Suppression of Back-toBack Hadron Pairs at Forward Rapidity in d + Au Collisions at sNN = 200 GeV (2011) (6)
- Observation and Analysis of Tunneling Properties of Single Spherical Nanocrystalline Silicon Quantum Dot (2006) (6)
- Double-helicity dependence of jet properties from dihadrons in longitudinally polarized p plus p collisions at root s=200 GeV (2010) (6)
- Impact of Key Circuit Parameters on Signal-to-Noise Ratio Characteristics for the Radio Frequency Single-Electron Transistors (2008) (6)
- Measurement of K 0 S and K ∗ 0 in p + p , d + Au , and Cu + Cu collisions at √ sNN = 200 GeV (2014) (6)
- In Situ Growth Monitoring During Metalorganic Chemical Vapor Deposition of YBa 2Cu 3Ox Thin Films by Spectroscopic Ellipsometry (1999) (6)
- Staircase-like structures in in situ optical reflectance measurement as an evidence for two-dimensional crystal growth in layer-by-layer chemical vapor deposition of YBa2Cu3Ox (1994) (6)
- Nanocrystalline silicon quantum dots prepared by VHF plasma enhanced chemical vapor deposition (2001) (6)
- Numerical Analysis of the Dynamic Characteristics of Amorphous Silicon Thin-Film Transistors (1988) (5)
- Transient photoluminescence and photo-induced optical absorption in polymeric and crystalline sulphur† (1984) (5)
- Fabrication of Nanosilicon Ink and Two-Dimensional Array of Nanocrystalline Silicon Quantum Dots (2010) (5)
- Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field (2011) (5)
- Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts (2014) (5)
- Superconductivity and surface morphology of YBCO thin films prepared by metalorganic chemical vapor deposition (1995) (5)
- Normal-Pressure and Low-Temperature Thermal Oxidation of Silicon (1987) (5)
- Onset of pi(0) suppression studied in Cu+Cu collisions at sqrt S NN=22.4, 62.4, and 200 GeV. (2008) (5)
- Anomalous current-voltage characteristics along the c-axis in YBaCuO thin films prepared by MOCVD and AFM lithography (1997) (5)
- Generation of Electron Cyclotron Resonance Plasma in the VHF Band (1989) (5)
- Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots (2011) (5)
- Transfer printing of Al2O3 gate dielectric for fabrication of top-gate MoS2 FET (2019) (5)
- Atomic Force Microscope Current-Imaging Study for Current Density through Nanocrystalline Silicon Dots Embedded in SiO2 (2004) (5)
- J/psi production in Cu+Cu and Au+Au collisions at RHIC-PHENIX (2008) (5)
- Heavy-quark production in p + p and energy loss and flow of heavy quarks in Au + Au collisions at √ sN N = 200 GeV (2011) (5)
- Preparation of a-Si and its Related Materials by Hydrogen Radical Enhanced CVD (1987) (5)
- Temperature Evolution of Spin-Polarized Electron Tunneling in Silicon Nanowire–Permalloy Lateral Spin Valve System (2012) (5)
- High ON/OFF ratio and multimode transport in silicon nanochains field effect transistors (2012) (5)
- Photoluminescence of surface‐nitrided nanocrystalline silicon dots (2003) (5)
- Synthesis of Ge/Si core/shell nanowires with suppression of branch formation (2016) (4)
- Structure Analysis of SrTiO3/BaTiO3 Strained Superlattice Films Prepared by Atomic-Layer Metalorganic Chemical Vapor Deposition (2000) (4)
- Azimuthally anisotropic emission of low-momentum direct photons in Au + Au collisions at √ ssNNNN (2018) (4)
- In situ monitoring of silicon nanocrystal formation with pulsed SiH4 supply by optical emission spectroscopy of Ar plasma (2013) (4)
- Electron transport in physically-defined double quantum dots on a highly doped silicon-on-insulator substrate (2016) (4)
- Spontaneous emission control of silicon nanocrystals by silicon three-dimensional photonic crystal structure fabricated by self-aligned two-directional electrochemical etching method (2009) (4)
- Preparation and characterization of low-voltage cathodoluminescent ZnS (1979) (4)
- Impact of Deformation Potential Increase at Si/SiO2 Interfaces on Stress-Induced Electron Mobility Enhancement in Metal–Oxide–Semiconductor Field-Effect Transistors (2013) (4)
- Reactive Deposition of a-Silicon and Si-Based Alloys (1986) (4)
- Microscopic study of germanium nanowires grown via gold-catalyzed chemical vapor deposition below the eutectic temperature (2013) (4)
- GHz photon-activated hopping between localized states in a silicon quantum dot (2013) (4)
- Physically defined silicon triple quantum dots charged with few electrons in metal-oxide-semiconductor structures (2020) (4)
- Adhesion lithography to fabricate MoS2 FETs with self-assembled monolayer-based gate dielectrics (2016) (4)
- Development of a Time Projection Chamber using CF4 gas for relativistic heavy ion experiments (2006) (4)
- Nanostructured materials and devices for sensor and electronic applications (1999) (4)
- Ge/Si core/shell nanowires with controlled low temperature grown Si shell thickness (2015) (4)
- Anomalous electron mobility in extremely-thin SOI (ETSOI) diffusion layers with SOI thickness of less than 10 nm and high doping concentration of greater than 1×1018cm−3 (2010) (4)
- Electromechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory (2009) (4)
- Quadrupole Anisotropy in Dihadron Azimuthal Correlations in Central d þ Au Collisions at ffiffiffiffiffiffiffiffi sNN p 1⁄4 200 GeV (2013) (4)
- Erratum: Measurement of transverse single-spin asymmetries forJ/ψproduction in polarizedp+pcollisions ats=200GeV[Phys. Rev. D82, 112008 (2010)] (2012) (4)
- Evaluation of Deep States in Amorphous-Silicon/Silicon-Nitride System from Charge-Coupled Device Characteristics (1988) (4)
- Measurement of the higher-order anisotropic flow coefficients for identified hadrons in Au + Au collisions at √ sNN (2016) (4)
- Study of Single-Charge Polarization on two Charge Qubits Integrated onto a Double Single-Electron Transistor Readout (2007) (3)
- Theoretical Study of Nonequilibrium Electron Transport and Charge Distribution in a Three-Site Quantum Wire (2008) (3)
- Charge storage in silicon nanocrystals and device application (2005) (3)
- Quantum information processing in a silicon-based system (2016) (3)
- Controlled Ge nanowires growth on patterned Au catalyst substrate (2008) (3)
- Vertical-Type Amorphous-Silicon MOSFET IC's (1987) (3)
- Nano Electromechanical Memory Device using Nanocrystalline Si Dots (2004) (3)
- Cold nuclear matter effects on J/psi production as constrained by deuteron-gold measurements at root S-NN=200 GeV (2017) (3)
- Fabrication of MOS Nanostructure by Employing Electron Beam Lithography and Anisotropic Wet Etching of Silicon (1991) (3)
- Preferential Nucleation of Nanocrystalline Silicon along Microsteps (1995) (3)
- Deionization of Dopants in Silicon Nanofilms Even with Donor Concentration of Greater than 10(19) cm(-3). (2016) (3)
- Simulation Study of Charge Modulation in Coupled Quantum Dots in Silicon (2010) (3)
- Atomistic study of phonon states in hydrogen-terminated Si ultra-thin films (2008) (3)
- Separation of Nucleation and Growth Processes of Nanocrystalline Silicon by Hydrogen Radical Treatment of Hydrogenated Amorphous Silicon (1992) (3)
- Surface passivation of germanium nanowires using Al (2014) (3)
- Design of New Logic Architectures Utilizing Optimized Suspended-Gate Single-Electron Transistors (2010) (3)
- Enhanced production of direct photons in Au + Au collisions at square root(S(NN)) = 200 GeV and implications for the initial temperature. (2010) (3)
- Design optimization of NEMS switches for single-electron logic applications (2008) (3)
- Realization of Lithographically‐Defined Silicon Quantum Dots without Unintentional Localized Potentials (2011) (3)
- Growth and characterisation of Ge Nanowires by chemical vapour deposition (2011) (3)
- Measurements of Higher Order Flow Harmonics in Au þ Au Collisions at ffiffiffiffiffiffiffiffi sNN p 1⁄4 200 GeV (2011) (2)
- Measurement of jet-medium interactions via direct photon-hadron correlations in Au+Au and d+Au collisions at sNN=200 GeV (2020) (2)
- Charge Storage Mechanism in Nano-Crystalline Si Based Single-Electron Memories (2000) (2)
- Temperature insensitive conductance detection with surface-functionalised silicon nanowire sensors (2011) (2)
- Silicon Nanocrystal Flash Memory (2010) (2)
- Junction formation in YBaCuO thin films by scanning probe technologies (1997) (2)
- Electron Transport in Nanocrystalline Silicon (2009) (2)
- Measurement of transverse single-spin asymmetries for J = c production in polarized p þ p collisions at ffiffi s p 1⁄4 200 GeV (2010) (2)
- Transient response analysis of programming/readout characteristics for NEMS memory (2008) (2)
- Hole Transport in Glow Discharge a-SiGex:H,(F) Alloys (1985) (2)
- Single Hole Charging at Room Temperature of Ge Quantum Dots Grown on Si(001) by Molecular Beam Epitaxy (2009) (2)
- Erratum: J/ψ production versus centrality, transverse momentum, and rapidity in Au+Au collisions at sNN=200GeV (Physics Review Letters (2007) 98 (232301)) (2007) (2)
- Frequency Selective , High Transmission Spiral Terahertz Plasmonic Antennas (2016) (2)
- Direct observation of subband structures in (110) PMOSFETs under high magnetic field: Impact of energy split between bands and effective masses on hole mobility (2009) (2)
- a-Si : H IN ELECTROPHOTOGRAPHY AND VIDICON DEVICES (1981) (2)
- Laser-driven shock wave inside a glass microballoon target (1978) (2)
- Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer (2013) (2)
- FABRICATION AND CHARACTERIZATION OF COLD ELECTRON EMITTER BASED ON NANOCRYSTALLINE SILICON DOTS (2000) (2)
- Multi-scale simulation of hybrid silicon nano-electromechanical (NEM) information devices (2009) (2)
- Selflimiting adsorption of precursors for chemical vapor deposition of oxide superconductors (1991) (2)
- Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High-Performance Electron Devices (2013) (2)
- Mechanism of carbon nanotubes terahertz detectors based on photothermoelectric effect (2016) (2)
- ELECTRON TRANSPORT PROPERTIES AND DEVICE APPLICATIONS OF NANOCRYSTALLINE SILICON QUANTUM DOTS (2004) (2)
- Electron transport through a single nanocrystalline silicon quantum dot between nanogap electrodes (2016) (2)
- Proposal of Trench-Oxide Metal-Oxide-Semiconductor Structure and Computer Simulation of Silicon Quantum-Wire Characteristics (1993) (2)
- Single-electron spin resonance in a Si/SiGe double quantum dot with a micromagnet (2015) (2)
- Mercury-sensitized photo-induced chemical vapor deposition of YBa2Cu3Ox films (1991) (2)
- Cold-Nuclear-Matter Effects on Heavy-Quark Production at Forward and Backward Rapidity in d þ Au Collisions at ffiffiffiffiffiffiffi sNN p 1⁄4 200 GeV (2014) (2)
- Split-joint bull's eye structure with aperture optimization for multi-frequency terahertz plasmonic antennas (2016) (2)
- Cross section and double helicity asymmetry for mesons and their comparison to 0 production in p þ p collisions at ffiffi s p 1⁄4 200 GeV (2011) (2)
- Comparison of picosecond electron dynamics in isolated and clustered Si quantum dots deposited on a semiconductor surface (2019) (2)
- Experimental study on SET/RESET conditions for graphene resistive random access memory (2014) (2)
- Preparation of thin films of YBa2Cu3Ox with a smooth surface by atomic layer MOCVD (1996) (2)
- Use of self-assembled monolayers for selective metal removal and ultrathin gate dielectrics in MoS2 field-effect transistors (2017) (2)
- Heteroepitaxial growth of HgTe on InSb at 200 °C by metalorganic chemical vapor deposition using ditertiarybutyltelluride (1989) (2)
- Improved off-Characteristics of a-Si Vertical-Type Mosfets (1988) (2)
- Numerical simulation study of electrostatically defined silicon double quantum dot device (2011) (2)
- Low-temperature chemical vapor deposition of YBa2Cu3Ox films (1991) (2)
- O ct 2 00 8 Inclusive cross section and double helicity asymmetry for π 0 production in p + p collisions at √ s = 62 . 4 (2021) (2)
- Proposal of coplanar-type high-Tc superconducting field-effect devices (1997) (2)
- High-Speed and Non-Volatile Nano Electro-Mechanical Memory Incorporating Si Quantum Dots (2005) (2)
- Thickness dependence of terahertz plasmonic antenna (2016) (1)
- Hybrid Silicon Nanotechnologies for Advanced Information Processing and Sensing (Invited Talk) (2010) (1)
- Hybrid silicon nanotechnologies for advanced information processing (2008) (1)
- Application of ion-implantation method to amorphous silicon thin-film-transistors (1987) (1)
- Spin-related tunneling in lithographically-defined silicon quantum dots (2010) (1)
- Silicon quantum dot devices (2008) (1)
- Ge/Si core/shell nanowires with controlled low temperature grown Si shell thickness (Phys. Status Solidi A 7∕2015) (2015) (1)
- Cold-Nuclear-Matter Effects on Heavy-Quark Production at Forward and Backward Rapidity in d + Au Collisions at root s ( NN ) = GeV (2017) (1)
- Atomic layer-by-layer MOCVD of oxide superconductors (1995) (1)
- Centrality-Dependent Modification of Jet-Production Rates in Deuteron-Gold Collisions at ffiffiffiffiffiffiffi sNN p 1⁄4 200 GeV (2016) (1)
- Measurement of Υ ( 1 S + 2 S + 3 S ) production in p + p and Au + Au collisions at √ sNN = 200 GeV (2015) (1)
- Ballistic transport in silicon nanostructures (2006) (1)
- The Relation Between Deposition Temperature, Superconductivity and Surface Morphology on CVD Process (1993) (1)
- A flexible terahertz scanner for omnidirectional imaging (2017) (1)
- Temperature and Frequency Dependencies of Charging and Discharging Properties in Mos Memory Based on Nanocrystalline Silicon Dot (2002) (1)
- Observation of Direct-Photon Collective Flow in Au þ Au Collisions at ffiffiffiffiffiffiffiffi sNN p 1⁄4 200 GeV (2012) (1)
- p-channel amorphous silicon TFTs with high hole mobility (1988) (1)
- Erratum: Measurement of transverse single-spin asymmetries for J/psi production in polarized p+p collisions at sqrt(s)=200 GeV [Phys. Rev. D 82, 112008 (2010)] (2012) (1)
- Critical Current Density of YBCO Ultra Thin Films Prepared by Atomic Layer MOCVD (1995) (1)
- Heavy-flavor electron-muon correlations in p plus p and d plus Au collisions at root s ( NN ) = 200 GeV (2017) (1)
- Vertical-coupled SiGe double quantum dots (2010) (1)
- (Invited) Low-Temperature Growth of Ge Nanowires by Vapor-Liquid-Solid Chemical Vapor Deposition (2012) (1)
- Observation of Quantum Level Spectrum for Silicon Double Single-Electron Transistors (2008) (1)
- The gate bias vs. the number of electrons confined in Si-dot-based single-electron transistor (2000) (1)
- Quantum dot devices: Technology vehicles for nanoscale physics and paths for future applications (2016) (1)
- Inclusive cross section and single transverse spin asymmetry for very forward neutron production in polarized p þ p collisions at ffiffi s p 1⁄4 200 GeV (2013) (1)
- Atomistic simulation of quantum transport in nanoscale silicon transistors (2005) (1)
- Measurement of bottom versus charm as a function of transverse momentum with electron-hadron correlations in p + p collisions at square root of s = 200 GeV. (2009) (1)
- Transfer printing of nanostructured membrane with elastomeric stamp and its application to TMDC-based field-effect transistors (2017) (1)
- Nanocrystalline Silicon dot displacement using speed-controlled tapping-mode atomic force microscopy (2004) (1)
- p-Channel Amorphous Silicon Thin-Film Transistors with High Hole Mobility (1988) (1)
- A new design of nanocrystalline silicon optical devices based on 3-dimensional photonic crystal structures (2005) (1)
- Single Electron Devices Based on Nanocrystalline Silicon (2000) (1)
- Fabrication and Characterization of Double Single-Electron Transistors as a Readout for Charge Qubits (2007) (1)
- Vapor‐Liquid‐Solid Synthesis of Ge Nanowire on H‐terminated Si Substrate (2010) (1)
- Nonequilibrium transport properties for a three-site quantum wire model (2008) (1)
- Charge sensing of a Si triple quantum dot system using single electron transistors (2012) (1)
- Gate-voltage tunable terahertz detection by a GaAs/AlGaAs quantum device (2012) (1)
- Experimental Observation of Record-high Electron Mobility of Greater than 1100 cm2V-1s-1 in Unstressed Si MOSFETs and Its Physical Mechanisms (2012) (1)
- Electron transport through silicon multiple quantum dot array devices (2008) (1)
- Keynote) Devices Architectures and Technology for Quantum Computing (2015) (1)
- Terahertz radiation detection through a micro-scale antenna and a silicon-based quantum dot (2012) (1)
- Silicon Nanocrystals Light-Emitters for Optical Interconnects (2008) (1)
- Synthesis and characterization of Ge-core/a-Si-shell nanowires with conformal shell thickness deposited after gold removal for high-mobility p-channel field-effect transistors (2020) (1)
- Observation of interdot coupling phenomena in nanocrystalline silicon point-contact structures (2006) (1)
- Fabrication and characterization of nanoscale suspended floating gates for NEMS memory (2006) (1)
- Using Self-Assembled Monolayers for Selective Metal Removing and Ultrathin Gate Dielectrics in MoS 2 Field-Effect Transistors (2016) (1)
- Material Design by Structural Modulation of Amorphous Semiconductors (1987) (1)
- Study on Device Parameters of Carbon Nanotube FETs to Realize Steep Subthreshold Slope of less than 60 mV/decade (2010) (1)
- Origin of an apparent metal-insulator transition in a Phosphorous doped silicon quantum dot. (2011) (1)
- Assembly of nanocrystalline silicon quantum dots based on a colloidal solution method (2005) (1)
- Ground and excited state charmonium production in p plus p collisions at root (2012) (1)
- Temperature dependence of hole transport properties through physically defined silicon quantum dots (2020) (1)
- A Multi-Purpose Electrostatically Defined Silicon Quantum Dot Structure (2011) (1)
- Enhanced tunnel conductance due to QCA cotunneling processes observed for silicon serial triple quantum dots (2008) (1)
- Detection of single-charge polarisation in silicon double quantum dots by using serially-connected multiple single-electron transistors (2008) (1)
- Physical Mechanism of Enhanced Uniaxial Stress Effect on Carrier Mobility in ETSOI MOSFETs (2013) (1)
- Scaled silicon nanoelectromechanical (NEM) hybrid systems (2010) (1)
- Variability in Scaled MOSFETs (2018) (1)
- Transfer printing of gate dielectric and carrier doping with poly(vinyl-alcohol) coating to fabricate top-gate molybdenum disulfide field-effect transistors (2020) (1)
- Transverse momentum dependence of J = c polarization at midrapidity in p þ p collisions at ffiffi s p 1⁄4 200 GeV (2017) (1)
- Photo-Assisted Chemical Vapor Deposition of YBaCuO Films (1992) (1)
- Material Technology for Vortex Electronics (2003) (1)
- Hybrid simulation of the RF-SET and its charge sensitivity analysis (2006) (1)
- Corrigendum: Observation and coherent control of interface-induced electronic resonances in a field-effect transistor. (2017) (0)
- Operation analysis of the high-frequency link DC-AC converter for the Smart House (2012) (0)
- Transition between Medium Modication and Vacuum Fragmentation in Dihadron Correlations in Relativistic Heavy Ion Collisions (2010) (0)
- Helium isotopes of seawater in adjacent sea of Japan (2006) (0)
- Cross section and transverse single-spin asymmetry of η mesons (2021) (0)
- Cross sections and double-helicity asymmetries of midrapidity inclusive charged hadrons in p þ p collisions at ffiffi s p 1⁄4 62 : 4 GeV (2017) (0)
- J/psi production versus centrality, transverse momentum, and rapidity in Au+Au collisions at square root sNN=200 GeV. (2007) (0)
- Scaling properties of azimuthal anisotropy in Au plus Au and Cu plus Cu collisions at root s ( NN ) = 200 GeV (2017) (0)
- Production of Charmonia in Cu+Cu and p+p Collisions at $\sqrt{s_{NN}}$=200GeV (2008) (0)
- Suppression of away-side jet fragments with respect to the reaction plane in Au plus Au collisions at root s ( NN ) = 200 GeV (2017) (0)
- Onset of 0 Suppression Studied in Cu þ Cu Collisions at ffiffiffiffiffiffiffiffi sNN p 1⁄4 22 : 4 , 62 . 4 , and 200 GeV (2017) (0)
- Measurement of emission-angle anisotropy via long-range angular correlations with high-$p_T$ hadrons in $d +{\rm Au}$ and $p + p$ collisions at $\sqrt{s_{\textit{NN}}}=200$ GeV (2018) (0)
- Production in ffiffiffiffiffiffiffiffi sNN p 1⁄4 200 GeV Cu þ Cu Collisions (2008) (0)
- Low-momentum direct photon measurement in Cu$+$Cu collisions at $\sqrt{s_{_{NN}}}=200$ GeV (2018) (0)
- PROGRESS OF THE PHENIX EXPERIMENT IN THE YEAR 2004. (2005) (0)
- Systematic study of charged-pion and kaon femtoscopy in Au plus Au collisions at root s ( NN ) = 200 GeV (2017) (0)
- Development and performance evaluation of Thick-GEM (2007) (0)
- Azimuthally anisotropic emission of low-momentum direct photons in Au plus Au collisions at root S-NN=200 GeV (2016) (0)
- Quadrupole Anisotropy in Dihadron Azimuthal Correlations in Central d plus Au Collisions at root s ( NN ) = 200 (2013) (0)
- Measurements of Stability of Gas Electron Multiplier (GEM) (2005) (0)
- Ground and excited state charmonium production in p þ p collisions at ffiffi s p 1⁄4 200 GeV (2012) (0)
- J/ψ Production in Cu+Cu Collisions at √ sNN = 200 GeV at RHIC-PHENIX (2008) (0)
- 2015 Measurement of Υ (1S+2S+3S) production in p + p and Au + Au collisions at √ s NN = 200 (2022) (0)
- A ug 2 01 2 Direct photon production in d + Au collisions at √ s (2014) (0)
- Measurement of Bottom Versus Charm as a Function of Transverse Momentum with Electron-Hadron Correlations in p þ p Collisions at ffiffi s p 1⁄4 200 GeV (2017) (0)
- 4-25-2013 gamma ( 1 S + 2 S + 3 S ) production in d plus Au and p plus p collisions at root s ( NN ) = 200 GeV and cold-nuclear-matter effects (2017) (0)
- A pr 2 01 0 Transverse momentum dependence of J / ψ polarization at midrapidity in p + p collisions at √ s = 200 (2013) (0)
- Measurement of two-particle correlations with respect to second- and third-order event planes in Au + Au collisions at $\sqrt{s_{\it NN}}=200$ GeV (2019) (0)
- PHYSICAL REVIEW C 98 , 054902 ( 2018 ) Low-momentum direct-photon measurement in Cu + Cu collisions at √ (2018) (0)
- Measurements of Higher Order Flow Harmonics in Au plus Au Collisions at root s ( NN ) = 200 GeV (2017) (0)
- 2 1 Se p 20 15 φ meson production in d + Au collisions at √ s (2015) (0)
- Cross section and double helicity asymmetry for η mesons and their comparison to π ^ { 0 } production in p + p collisions at sqrt (2014) (0)
- Cold Nuclear Matter Effects on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>J</mml:mi><mml:mo>/</mml:mo><mml:mi>ψ</mml:mi></mml:math>Yields as a Function of Rapidity and Nuclear Geometry in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline">< (2011) (0)
- 054903 ( 2019 ) Measurement of two-particle correlations with respect to second-and third-order event planes in Au + Au collisions at √ sNN = 200 GeV (2019) (0)
- M ay 2 01 1 Measurements of Higher-Order Flow Harmonics in Au + Au Collisions at √ s NN = 200 GeV (2018) (0)
- φ meson production in d+Au collisions at sqrt[s_{NN}]=200GeV (2015) (0)
- Cross section and transverse single-spin asymmetry of eta mesons in p up arrow plus p collisions at root s = 200 GeV at forward rapidity (2014) (0)
- Measurement of KS ( 0 ) and K * ( 0 ) in p plus p , d plus Au , and Cu plus Cu collisions at root s ( NN ) = 200 GeV (2017) (0)
- M ay 2 01 3 Nuclear Modification of ψ ′ , χ c and J / ψ Production in d + Au Collisions at √ s (2019) (0)
- Systematic study of nuclear effects in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>p</mml:mi><mml:mo>+</mml:mo><mml:mi>Al</mml:mi></mml:mrow><mml:mo>,</mml:mo><mml:mo> </mml:mo><mml:mrow><mml:mi>p</mml:mi><mml:mo>+</mml:mo><mml:mi>Au</mml:mi></mml:mrow><mml:mo>,</mml: (2022) (0)
- Azimuthal Anisotropy of 0 Production in Au þ Au Collisions at ffiffiffiffiffiffiffiffi sNN p 1⁄4 200 GeV : Path-Length Dependence of Jet Quenching and the Role of Initial Geometry (2010) (0)
- Cross section for bb[over ̄] production via dielectrons in d + Au collisions at sqrt[s_{NN}]=200 GeV (2015) (0)
- Photon-hadron jet correlations in p plus p and Au plus Au collisions at s ( NN ) = 200 GeV (2017) (0)
- A ug 2 01 1 Observation of direct-photon collective flow in Au + Au collisions at √ s (2013) (0)
- 0 61 10 16 v 1 1 3 N ov 2 00 6 Correlated Production of p and p̄ in Au + Au Collisions at √ s NN = 200 GeV (2022) (0)
- Azimuthal anisotropy of π⁰ production in Au+Au collisions at sqrt((s)NN)=200 GeV: path-length dependence of jet quenching and the role of initial geometry. (2010) (0)
- D ec 2 01 6 Azimuthally anisotropic emission of low-momentum direct photons in Au + Au collisions at √ s NN = 200 GeV (2016) (0)
- Measurement of J / ψ via di-electron decay in Cu + Cu collisions at RHIC-PHENIX (0)
- Measurement of gamma ( 1 S + 2 S + 3 S ) production in p plus p and Au plus Au collisions at root sNN = 200 GeV (2017) (0)
- Corrigendum to "Deep learning with convolutional neural network for estimation of the characterisation of coronary plaques: Validation using IB-IVUS" [Radiography 28 (2022) 61-67]. (2022) (0)
- Identified charged hadron production in p plus p collisions at root s = 200 and 62 . 4 GeV (2017) (0)
- Transverse momentum and centrality dependence of dihadron correlations in Au plus Au collisions at root s ( NN ) = 200 GeV : Jet quenching and the response of partonic matter (2017) (0)
- Ground and excited state charmonium production in p plus p collisions at root s = 200 (2012) (0)
- Event structure and double helicity asymmetry in jet production from polarized p plus p collisions at root s=200 GeV (2017) (0)
- Measurement of vector mesons via di-electron decay in Cu+Cu collisions at RHIC-PHENIX (0)
- Room temperature negative differential conductance due to resonant tunneling through a single nanocrystalline-Si quantum dot (2005) (0)
- NeoSilicon and its device applications (2005) (0)
- Phosphorous-doping in silicon nanocrystals (2008) (0)
- Ab-initio method of designing artificial quantum bits (2005) (0)
- NeoSilicon: Silicon quantum dots with controlled interparticle distance (2002) (0)
- Functional silicon nanoelectronic devices co-integrated with nanoelectromechanical structures (2009) (0)
- Observation of Pauli Spin Blockade in the few-hole regime in p-channel double quantum dots (2016) (0)
- Theory of Nonequilibrium Transport Properties for a Three-site Quantum Wire (2007) (0)
- Nano Silicn and Neo Silicon (2000) (0)
- Semiconductor Integrated Circuit Technology and Eectrochemistry (1995) (0)
- Advancement of Group IV Nanostructures Nanophotonics and Nanoelectronics (2014) (0)
- Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices (2016) (0)
- Scaled nanoelectromechanical (NEM) hybrid devices (2011) (0)
- Adhesion lithography with self-assembled monolayer to fabricate MoS 2 FET (2017) (0)
- Low Temperature Growth of ZnSe Thin Films by Hydrogen Radical Enhanced Chemical Vapor Deposition (1987) (0)
- Study of charge quantization in individual silicon quantum dots using Kelvin Probe Force Microscopy (2004) (0)
- Proposal for fast-response radial Schottky junction photodetectors based on silicon nanowires (2015) (0)
- Crystallization Mechanism of Nanocrystalline Silicon Fabricated by Hydrogen Radical Annealing (1992) (0)
- Dual Function of Charge Sensor: Charge Sensing and Gating (2012) (0)
- Charge sensing of p-channel double quantum dots fabricated on (110) silicon substrate (2015) (0)
- Switching properties of electromechanically bistable and multistable bridges for nonvolatile memory applications (2008) (0)
- Impact of PVA on carrier doping and electrical characteristics in MoS 2 FET (2019) (0)
- Magnetic field dependence of the leakage current in Pauli spin blockade in p-channel silicon double quantum dots (2016) (0)
- Measurement of thermoelectric properties of Ge/Si core/shell nanowires (2015) (0)
- Effect of gold migration on the morphology of germanium nanowires grown by a two-step growth method with temperature modulation (2016) (0)
- Scaling of Channel Length for Highly Conductive Silicon Nanocrystal Films (2012) (0)
- Frontier Process Workshop 2007 (2007) (0)
- Atomic Layer Mocvd of Oxide Superconductors and Dielectrics (1999) (0)
- Temperature dependence of hole transport properties in silicon quantum dots (2017) (0)
- Very Narrow Linewidths in the Fluorescence from Germanium-Vacancy Centers in Nanodiamonds (2017) (0)
- Nanocrystalline silicon dots displacement using tapping-mode atomic force microscopy (2003) (0)
- Gated Four-Probe Method to Evaluate the Impact of SAM Gate Dielectric on Mobility in MoS2 FET (2018) (0)
- Coupled Si Quantum Dots for Spin-Based Qubits (2015) (0)
- Formation of an Ordered Array of Nanocrystalline Si Dots by Using a Solution Droplet Evaporation Method (2004) (0)
- Single-Electron Tunneling in Nanocrystalline Silicon (1998) (0)
- Nanocrystalline Silicon Memory Devices (2006) (0)
- Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing ( Quantum Dot Structures) (1997) (0)
- NeoSilicon based nanoelectromechanical information devices (2011) (0)
- P-type Si nanocrystal thin-film transistor (2008) (0)
- Band-to-Band Graphene Resonant Tunneling Field Effect Transistor (2015) (0)
- Electron Coupling States in quantum dots in Nanocrystalline Silicon (2004) (0)
- Preparation of Y-doped SrCuO2 infinite layer films by MOCVD (1994) (0)
- Silicon nanoelectromechanical information devices – Present and future – (2006) (0)
- Single Electron Devices (2001) (0)
- Charge Qubits in Doped Quantum Dots : Effects on Computation and Coherence (2015) (0)
- Electrons, Phonons, and Electron-Phonon Interactions in Neosilicon (2004) (0)
- Nanocrystalline Si and its application to new devices (2001) (0)
- The impacts of silicon substrate surface conditions on the VLS growth of germanium nanowires (2008) (0)
- Preparation of SOI-based Double Quantum Dots Structure Defined by Geometry and Electrostatically (2010) (0)
- Formation of three-dimensionally integrated nanocrystalline silicon particles by dip-coating method (2015) (0)
- In-situ process monitoring of MOCVD of superconducting and dielectric oxide thin films (1999) (0)
- Self-assembled monolayer-based gate dielectrics for low voltage MoS 2 FET (2016) (0)
- Inter-grain coupling effects on Coulomb oscillations in dual-gated nanocrystalline silicon point-contact transistors (2005) (0)
- AFM current imaging for surface oxidized nanocrystalline silicon dots (2004) (0)
- Pulsed-source MOCVD HfO2 ultrathin film growth optimized by in situ ellipsometry monitoring (2003) (0)
- Design of New Logic Architectures Utilizing Suspended-gate Single-Electron Transistors (2010) (0)
- Top-down and bottom-up approaches towards silicon nanoelectronics (2006) (0)
- ELECTRON TRANSPORT IN SILICON NANODEVICES (2001) (0)
- Numerical Analysis of the Dynamic Characteristics of Amorphous Silicon Thin-Film Transistors : Semiconductors and Semiconductor Devices (1988) (0)
- In-situ Optical Monitoring of Oxide Superconductor Growth for Layer-by-Layer Chemical Vapor Deposition (1992) (0)
- Experimental Study on SET/RESET Conditions for Graphene ReRAM (2013) (0)
- 23pBK-11 Measurement of spin-valley states in a Si double quantum dot using electron spin resonance (2015) (0)
- Fabrication and Characterization of p-Channel Si Double-Quantum-Dot Structures (2012) (0)
- Computer simulation of amorphous-silicon charge-coupled devices (1988) (0)
- Measurement of thermoelectric characteristics of Ge/Si core-shell nanowires (2015) (0)
- Ballistic transport in Si vertical transistors (2001) (0)
- Low-Temperature Chemical Vapor Deposition of RBa 2 Cu 3 O X (R=Y, Pr) Ultra Thin Films (1994) (0)
- Mechanism of One-Directional Nano Etching in Silicon Using Magnetic-Field-Assisted Anodization (2008) (0)
- Transfer printing of Al 2 O 3 gate dielectric to fabricate top-gate MoS 2 FET (2019) (0)
- Observation of Size Dependent Structural Defects in Silicon Nanowires (2007) (0)
- Electron transport in a single silicon quantum dot structure using a vertical silicon probe (2000) (0)
- Fabrication and characterization of quantum dot devices using ultrathin SOI (2016) (0)
- DFT Simulation of Dynamic Charge States in Double Silicon Quantum Dots (2007) (0)
- Study of silicon nanodot formation in pulsed-gas VHF plasma process (2007) (0)
- Studies on primary photocurrent of a‐Si:H using xerographic and vidicon techniques (2008) (0)
- Fabrication and evaluation of Si nanobridge transistor (2006) (0)
- Graphene ReRAM towards All Graphene LSIs: Experimental Demonstration of Two-terminal ReRAM Operation in Electrically Broken Mono- and Multi-layer Graphene (2012) (0)
- Nanoscale selective silicon nanowires surface functionalization for sensing applications (2009) (0)
- Variation of Electrostatic Coupling and Investigation of Current Percolation Paths in Nanocrystalline Silicon Cross Transistors (2005) (0)
- Perpendicular magnetic field dependence of triangular triple silicon quantum dot system (2014) (0)
- Impact of Contact Doping on Electrical Characteristics in WSe2 FET (2020) (0)
- Self-Assembled Monolayer-Based Gate Dielectrics for MoS 2 FETs (2016) (0)
- Conference Report--FED-Cambridge Joint Conference Future Nanometer-Scale Electron Devices (1997) (0)
- Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD (2004) (0)
- Bottom-up fabrication of Si nanodot transistors usign the nc-Si dots solution (2005) (0)
- Low-Dimensional-Structure Devices for Future ElectronicsBehaviors (2018) (0)
- Conductivities of Ge/Si core/shell nanowires dependence on the core diameter (2016) (0)
- Electric property of Ge/Si core-shell nanowire at low temperature (2016) (0)
- Charge operation of nitrided nanocrystalline silicon dot memory devices (2005) (0)
- Coherent control of trapped-charge induced resonances in a field-effect transistor (2016) (0)
- Microsoft Word-Mizuta manuscript final (2007) (0)
- Is it possible to avoid uncontrolled multiple tunnel junctions induced by random dopants in heavily-doped silicon single-electron transistors? (2008) (0)
- Amorphous—silicon thin—film transistors and their integrated circuits (1989) (0)
- Observation of strongly-coupled multiple-dot characteristics in the dual recess structured silicon channel with different oxidation conditions (2007) (0)
- Functional silicon nanoelectromechanical information processing devices (2007) (0)
- Studies of high-speed non-volatile nanoelectro-mechanical systems memory device using “neosilicon (2004) (0)
- Voltage-Limitation-Free Compact SET Model Incorporating the Effects of Spin-Degenerate Discrete Energy States (2007) (0)
- Physics and applications of Si-based nanoelectromechanical information devices (Plenary Talk) (2007) (0)
- One-dimensional periodic nanocrystalline silicon arrays made by pulsed laser interference crystallization (2008) (0)
- Physically Defined Coupled Silicon Quantum Dots Containing a Few Electrons for Electron Spin Qubits (2018) (0)
- Bottom-up approach to silicon nanoelectronics (Invited paper) (2008) (0)
- Effect of Post-Deposition Annealing on the Electrical Properties of MOCVD-grown Praseodymium Silicate MIS Diode (2006) (0)
- In Situ Optical Diagnostics for Layer-by-Layer CVD of YBaCuO Films (1993) (0)
- Electronic states and quantum transport in Si nanorod transistors (2005) (0)
- AFM current-imaging study for current density through nanocrystalline silicon dots embedded in SiO2 (2005) (0)
- Charge Storage in Nitrided nc.-Si Dots, Promising Memory Nodes for Nonvolatile Memory Application (2004) (0)
- Didecyl-phosphonic-acid based gate dielectrics for MoS 2 FET (2016) (0)
- Observation of Quantum Confinement Effects in Nanocrystalline Silicon Dot Floating Gate Single Electron Memory Devices (2002) (0)
- Co-integration of silicon nanodevices and NEMS for advanced information processing (2008) (0)
- Silicon nanoelectronics for ‘More than Moore’ and ‘Beyond CMOS’ domains (Invited Talk) (2007) (0)
- Ab-initio calculations of electronic states in nano-crystalline Si quantum dots (2005) (0)
- Formation of an Ordered Array of nc-Si Dots by Using a Solution Droplet Evaporation Method (2004) (0)
- Fabrication and characterization of Si/SiGe quantum dots with capping gate (2012) (0)
- Lateral conduction of Si nanocrystals by thin film transistor structures (2009) (0)
- Hole transport in a single quantum dot on highly-doped silicon substrate (2016) (0)
- Study of Fabrication Processes for Si-MOS Quantum Dot Devices with Multi-Layered Al Gates Structure (2016) (0)
- Reduction of Charge Noise in Dual-Gate Si/SiGe Quantum Point Contact (2013) (0)
- Single-electron energy dissipation processes mediated by slab mode phonons observed for suspended silicon double quantum dots (2010) (0)
- Manipulation of silicon quantum dots and isolated structures using GHz photons (2014) (0)
- Ab-initio simulation of phonon properties of ultra-thin silicon films (2007) (0)
- Pr-Si-O Gate Stack with an Ultrathin Interfacial Layer Grown by MOCVD and PDA under Low O2 Partial Pressure (2008) (0)
- Tunnel-coupled double nanocrystalline Si quantum dots integrated into a single-electron transistor (2006) (0)
- Fabrication of silicon 3D photonic crystal structures in 100nm scale using double directional etchings method (2006) (0)
- Formation of nanocrystalline silicon quantum dot arrays (2005) (0)
- Analysis of Thermal Conduction in Terahertz Detectors Based on Photothermoelectric effect and Imaging Applications (2016) (0)
- Single electron transport simulations in silicon nanochains (2008) (0)
- Visible electroluminescence from size-controlled silicon quantum dots (2006) (0)
- Single electron memory devices based on nanocrystalline silicon dots (2002) (0)
- Size effects on hopping conduction in Si nanocrystals (2010) (0)
- Electronic transport in a single quantum dot under continuous-wave microwave irradiation at cryogenic temperatures (2016) (0)
- Enhancement of Thermoelectric Performance in Terahertz Detectors using Single Walled Carbon Nanotube Films (2016) (0)
- Fabrication and evaluation of heavily P-doped Si quantum dot and back-gate induced Si quantum dot (2012) (0)
- Silicon quantum dot devices for future electronics (2014) (0)
- Physics and Applications of Hybrid Silicon Nanoelectromechanical Devices (Plenary Talk) (2008) (0)
- Visualization of ultrafast electron dynamics using time-resolved photoemission electron microscopy (2014) (0)
- Fabrication and characterization of bottom-up Si Nanowire (2013) (0)
- Hybrid Silicon Nanoelectromechanical Devices: Physics and Applications (Invited Talk) (2010) (0)
- Preparation and characterization of conductive IrOx thin films by reactive sputtering. (1986) (0)
- Electrical characterization of back-gated and top-gated germanium-core/silicon-shell nanowire field-effect transistors (2016) (0)
- The nanostructuring of materials for device and sensor applications (1999) (0)
- Optical Properties of Silicon Three-Dimensional Photonic Crystal Fabricated by Self-Aligned Two-Directional Electrochemical Etching Method (2007) (0)
- Atomic Layer-by-Layer Metalorganic Chemical Vapor Deposition of YBa2Cu3Ox Thin Films (高温超伝導体に関するETLワ-クショップ 〔英文〕) -- (Electron Devices) (1994) (0)
- High Quality YBaCuO Thin Film Growth by Low-Temperature Metalorganic Chemical Vapor Deposition Using Nitrous Oxide (1993) (0)
- [Silicon Technology Division Award Speech] Few-Electron Silicon Quantum Dots for Spin-Based Quantum Devices (2016) (0)
- Observation of Coherent States in Coupled Nanocrystalline Si Double Dots at 4.2K (2004) (0)
- Advanced studies of high-k gate dielectrics toward future generation with equivalent gate oxide thickness of less than 1 nm (2004) (0)
- Single-Electron Transistors with Two Self-Aligned Gates (2000) (0)
- Single Electron Memory Devices Based on Silicon Nanocrystals Fabricated by Very High Frequency Plasma Deposition (1999) (0)
- Silicon nanochains: fundamental properties and applications (2008) (0)
- Current oscillations observed for sparse Si nanocrystal thin films (2009) (0)
- Neosilicon-created new applications (2004) (0)
- Bottom-up silicon nanoelectronics (2004) (0)
- Preparation and Applications of Nanocrystalline Silicon Devices (2006) (0)
- Electron-phonon interaction in suspended Si double quantum dots (2009) (0)
- Scaled Silicon Nanoelectromechanical Functional Systems (Keynote Lecture) (2010) (0)
- Hybrid Silicon Nanoelectromechanical Devices : Physics and Applications (2009) (0)
- MULTI-SCALE SIMULATION OF HYBRID SILICON NANO-ELECTROMECHANICAL (NEM) INFORMATION SYSTEMS (2009) (0)
- Atomic layer-by-layer MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry (2002) (0)
- Luminescence characteristics of Germanium-vacancy centers in diamond particles (2016) (0)
- VLS growth of germanium nanowires on SiO2-terminanted Si (111) substrate (2008) (0)
- Light emission from size reduced nanocrystal silicon quantum dots (2007) (0)
- Possible Non-equilibrium Kondo Effect in a Nanocrystalline Silicon Point-Contact Transistor (2006) (0)
- Nanocrystalline Silicon Quantum Dot Devices (2006) (0)
- Electric Field-Effect Enhancement by a Combination of Coplanar High-TC Superconducting Devices with Step-Edge Junctions (1998) (0)
- Hole spin-related transport in p-channel silicon quantum dots towards spin-orbit coupling-based qubit (2017) (0)
- Nano-electro-mechanical device application of neosilicon (2004) (0)
- Optimization and Tunnel Junction Parameters Extraction of Electrostatically Defined Silicon Double Quantum Dots Structure (2013) (0)
- Ballistic transport under magnetic field in silicon vertical transistors (2000) (0)
- Pr-silicate Ultrathin Films for High-k Gate Dielectrics Prepared by Metal-Organic Chemical Vapor Deposition (2004) (0)
- Hybrid simulation of the RF-SETs and their charge sensitivity analysis (2006) (0)
- Silicon Radio Frequency Single-electron Transistors Operating at above 4.2 K (2008) (0)
- NEM – MOS Co-integration for Fast & Nonvolatile Memory Applications (Invited Talk) (2009) (0)
- Electro-mechanical simulation of programming / readout characteristics for NEMS memory (2006) (0)
- Stabilization of Oxygen Diffusion in Ga-Doped YBa2Cu3O7-δ Thin Films Observed by Spectroscopic Ellipsometry (2000) (0)
- Hydrogen Radical Assisted CVD of ZnSe (1985) (0)
- High-speed and Non-volatile Memory Devices Using a Macroscopic Polarized Stack Consisting of Double Floating Gates Interconnected with Engineered Tunnel Oxide Barriers (2007) (0)
- Evidence of Electron Trapping and Emission in Nanocrystalline-Si Based Memory Device (2002) (0)
- Microwave manipulation of electrons in silicon quantum dots (2012) (0)
- An apparent metal-insulator transition in a phosphorous doped silicon single electron transistor (2011) (0)
- Single Hole Transport and Magnetic Field Dependence of Pauli Spin Blockade in P-channel Silicon Double Quantum Dots (2016) (0)
- Strongly coupled multiple-dot characteristics in dual recess structured silicon channel (2008) (0)
- Anomalous suppression of single-electron tunnelling observed for Si nanobridge transistors with a suspended quantum dot cavity (2008) (0)
- Hybrid silicon nanotechnologies for ‘More-than-Moore’ and ‘Beyond-CMOS’ domains (Plenary Talk) (2008) (0)
- Preparation of Nanocrystalline Silicon by Digital Chemical Vapor Deposition (1994) (0)
- Impact of Deformation Potential Increase at Si/SiO₂ Interfaces on Stress-Induced Electron Mobility Enhancement in Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials) (2013) (0)
- Coherent Effects of Interface Charge in a Silicon Quantum Dot (2016) (0)
- Fabrication and characterization of physically-defined double quantum dots without unintentional localized states on highly-doped silicon substrate (2015) (0)
- Inelastic single-electron tunneling assisted by confined phonons observed for suspended silicon double quantum dots (2010) (0)
- Nanoscale Observation of Size and Potential for Charged Nanocrystalline Si Dots using KFM (2004) (0)
- Near Infrared Photoconductivity in a-Si:H(F)/a-SiGe:H(F) Multilayers (1986) (0)
- In fl uence of the crystal orientation of substrate on low temperature synthesis of silicon nanowires from Si 2 H 6 (2008) (0)
- Fabrication of a highly controllable Si-MOS quantum dot device (2015) (0)
- Engineering of heterostructured tunnel barrier for non-volatile memory applications: potential of Pr-based heterostructured barrier as a tunneling oxide (2009) (0)
- Quasiballistic Electron Emission from Planarized Nanocrystalline-Si Cold Cathode (2004) (0)
- Charge Manipulations in Si-Based Quantum Dot Qubit Devices with Single Electron Transistors: Theory and Experiment (2014) (0)
- Single Photon Emission from Germanium-Vacancy Centers in Nanodiamonds (2016) (0)
- Materials Research Society Symposium Proceedings (2010) (0)
- Thin-film transistors and their applications. (1988) (0)
- Optimization of 14-nm Node Bulk/SOI FinFETs for SoC Platform: Thermal Conductivity, Operation Temperature, and Analog Performance Analysis (2012) (0)
- Observation of quantum effects in the electron transport characteristics of a nanocrystalline silicon point contact transistor (2006) (0)
- Electron Transport and Device Applications of Nanocrystalline Silicon (2004) (0)
- Low dimensional (0D, 1D, 2D) devices for future electronics (2017) (0)
- Mechanical property analysis and structural optimization for NEMS memory devices (2005) (0)
- Study of single-electron transport via suspended double silicon quantum dots (2009) (0)
- Charging-storing-discharging process in nitrided nanocrystalline silicon dots (2005) (0)
- Single electron memory utilizing nano-crystalline Si over short-channel silicon-on-insulator transistors (2000) (0)
- Picosecond Microphotography Of Laser-Plasma (1979) (0)
- Time-laps observation of morphological changes during radiation induced apoptosis in cultured Medaka cells. (2005) (0)
- Analysis of high-rate a-Si:H deposition in a VHF plasma (2016) (0)
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