Shyam P. Murarka
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Engineering
Shyam P. Murarka's Degrees
- PhD Electrical Engineering Stanford University
- Masters Electrical Engineering Stanford University
- Bachelors Electrical Engineering Stanford University
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(Suggest an Edit or Addition)Shyam P. Murarka's Published Works
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Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Silicides for VLSI Applications (1983) (1290)
- Chemical Mechanical Planarization of Microelectronic Materials (1997) (681)
- Refractory silicides for integrated circuits (1980) (518)
- Multilevel interconnections for ULSI and GSI era (1997) (328)
- Advanced multilayer metallization schemes with copper as interconnection metal (1993) (219)
- Copper metallization for ULSL and beyond (1995) (200)
- Thickness dependent electrical resistivity of ultrathin (<40 nm) Cu films (2001) (194)
- Metallization: Theory and practice for VLSI and ULSI (1992) (193)
- Silicide thin films and their applications in microelectronics (1995) (185)
- Chemical processes in the chemical mechanical polishing of copper (1995) (176)
- Thin film interaction between titanium and polycrystalline silicon (1980) (169)
- Two‐Dimensional Wafer‐Scale Chemical Mechanical Planarization Models Based on Lubrication Theory and Mass Transport (1999) (132)
- Pattern Geometry Effects in the Chemical‐Mechanical Polishing of Inlaid Copper Structures (1994) (122)
- Effects of the addition of small amounts of Al to copper: Corrosion, resistivity, adhesion, morphology, and diffusion (1994) (121)
- Silicide formation in thin cosputtered (tantalum + silicon) films on polycrystalline silicon and SiO2 (1980) (118)
- Resistivities of Thin Film Transition Metal Silicides (1982) (106)
- Copper-Fundamental Mechanisms for Microelectronic Applications (2000) (104)
- Thermal Nitridation of Silicon in Ammonia Gas: Composition and Oxidation Resistance of the Resulting Films (1979) (99)
- Diffusion of Copper in Nickel and Aluminum (1965) (97)
- Refractory Silicides of Titanium and Tantalum for Low-Resistivity Gates and Interconnects (1980) (92)
- Oxidation resistant high conductivity copper films (1994) (89)
- Study of cobalt‐disilicide formation from cobalt monosilicide (1985) (85)
- The effect of the polishing pad treatments on the chemical-mechanical polishing of SiO2 films (1995) (84)
- Self-aligned silicides or metals for very large scale integrated circuit applications (1986) (81)
- Thermal oxidation of GaAs (1975) (80)
- Effect of phosphorus doping on stress in silicon and polycrystalline silicon (1983) (79)
- Interlayer dielectrics for semiconductor technologies (2003) (78)
- Metal drift behavior in low dielectric constant organosiloxane polymer (2001) (74)
- Electronic Materials: Science and Technology (1989) (73)
- Transition Metal Silicides (1983) (72)
- Electrical conduction and breakdown in oxides of polycrystalline silicon and their correlation with interface texture (1982) (63)
- Dopant redistribution in silicide-silicon and silicide-polycrystalline silicon bilayered structures (1987) (63)
- Alloying of copper for use in microelectronic metallization (1995) (61)
- Anodic Oxide on GaAs : Quantitative Chemical Depth Profiles Obtained Using Auger Spectroscopy and Neutron Activation Analysis (1977) (60)
- Oxidation induced stacking faults in n‐ and p‐type (100) silicon (1977) (59)
- Stress in silicon dioxide films deposited using chemical vapor deposition techniques and the effect of annealing on these stresses (1990) (57)
- Chemical-mechanical polishing of copper with oxide and polymer interlevel dielectrics (1995) (57)
- Oxidation of tantalum disilicide on polycrystalline silicon (1980) (56)
- Elastic and viscoelastic analysis of stress in thin films (1992) (56)
- Chapter VII – Special Applications (1983) (55)
- Damascene copper interconnects with polymer ILDs (1997) (54)
- Hexagonal WSi2 in cosputtered (tungsten and silicon) mixture (1981) (53)
- Thermal oxidation of hafnium silicide films on silicon (1980) (53)
- Passivation of copper by silicide formation in dilute silane (1992) (52)
- Electrochemical Potential Measurements during the Chemical‐Mechanical Polishing of Copper Thin Films (1995) (48)
- Self-aligned cobalt disilicide for gate and interconnection and contacts to shallow junctions (1987) (47)
- Formation and thermal stability of CoSi2 on polycrystalline Si (1985) (46)
- MOS Compatibility of high-conductivity TaSi2/n+poly-Si gates (1980) (46)
- Nitrogen, oxygen, and argon incorporation during reactive sputter deposition of titanium nitride (1987) (43)
- Diffusion of vanadium in niobium, zirconium and vanadium (1968) (43)
- Inlaid Copper Multilevel Interconnections Using Planarization by Chemical-Mechanical Polishing (1993) (41)
- Diffusion of vanadium in aluminium and nickel (1968) (41)
- Interactions in metallization systems for integrated circuits (1984) (41)
- Mechanisms of copper removal during chemical mechanical polishing (1995) (40)
- Thermal annealing of buried Al barrier layers to passivate the surface of copper films (1994) (40)
- Effect of Copper Ions in the Slurry on the Chemical‐Mechanical Polish Rate of Titanium (1994) (39)
- High temperature stability of PtSi formed by reaction of metal with silicon or by cosputtering (1983) (38)
- Oxygen partial‐pressure dependence of the oxidation‐induced surface stacking faults in (100) n silicon (1977) (38)
- Self-assembled near-zero-thickness molecular layers as diffusion barriers for Cu metallization (2001) (38)
- Effect of Growth Parameters on the CVD of Boron Nitride and Phosphorus‐Doped Boron Nitride (1979) (35)
- Diffusion of Chromium in Nickel (1964) (35)
- Interdiffusions in thin‐film Au on Pt on GaAs (100) studied with Auger spectroscopy (1975) (35)
- Annealing of boron‐implanted corrosion resistant copper films (1993) (35)
- Kinetics of ultrathin SiO2 growth (1986) (34)
- Capacitance–voltage, current–voltage, and thermal stability of copper alloyed with aluminium or magnesium (1998) (34)
- Refractory silicides of titanium and tantalum for low-resistivity gates and interconnects (1980) (34)
- Kinetics of platinum silicide formation during rapid thermal processing (1992) (34)
- Electrically active stacking faults in CMOS integrated circuits (1979) (33)
- Diffusion of chromium in aluminium (1964) (32)
- Stability of hydrogen in silicon nitride films deposited by low‐pressure and plasma enhanced chemical vapor deposition techniques (1989) (32)
- Erratum: Role of point defects in the growth of the oxidation-induced stacking faults in silicon (1977) (31)
- Mobile Ion Detection in Organosiloxane Polymer Using Triangular Voltage Sweep (2002) (30)
- Integration of copper multilevel interconnects with oxide and polymer interlevel dielectrics (1995) (30)
- Intermetallic formation in copper/magnesium thin films—kinetics, nucleation and growth, and effect of interfacial oxygen (1994) (30)
- Plasma‐Grown Oxide on GaAs Semiquantitative Chemical Depth Profiles Obtained Using Auger Spectroscopy and Neutron Activation Analysis (1978) (29)
- Water‐related capacitance‐voltage recovery effect in low‐temperature‐annealed chemical vapor deposited phosphosilicate (P glass) films (1992) (28)
- Tantalum nitride as a diffusion barrier between Pd2Si or CoSi2 and aluminum (1989) (27)
- Reactively sputtered titanium carbide thin films: Preparation and properties (1983) (27)
- Thermal stability of copper silicide passivation layers in copper-based multilevel interconnects (1998) (26)
- Cosputtered molybdenum silicides on thermal SiO2 (1980) (26)
- High-temperature stability of Au Pt/n-GaAs Schottky barrier diodes (1974) (26)
- A Study of Stacking Faults during CMOS Processing: Origin, Elimination and Contribution to Leakage (1980) (25)
- The addition of surfactant to slurry for polymer CMP: effects on polymer surface, removal rate and underlying Cu (1996) (24)
- Resistivity of Copper Films at Thicknesses Near the Mean Free Path of Electrons in Copper Minimization of the Diffuse Scattering in Copper (1999) (24)
- Electrical Activity of Epitaxial Stacking Faults (1977) (24)
- Stress effects in thermal cycling of copper (magnesium) thin films (1995) (24)
- Advanced materials for interconnections of the future - need and strategy (1997) (23)
- Phosphorus out‐diffusion during high temperature anneal of phosphorus‐doped polycrystalline silicon and SiO2 (1984) (22)
- Cosputtered cobalt silicides on silicon, polycrystalline silicon, and silicon dioxide (1984) (22)
- Properties of chemical vapor deposited tetraethylorthosilicate oxides: Correlation with deposition parameters, annealing, and hydrogen concentration (1990) (22)
- Oxidation of silicon without the formation of stacking faults (1977) (21)
- Interaction of reactively sputtered titanium carbide thin films with Si, SiO2Ti, TiSi2, and Al (1983) (20)
- Phosphorus distribution in TaSi2 films by diffusion from a polycrystalline silicon layer (1983) (19)
- Cation self-diffusion in strontium oxide (SrO) (1971) (18)
- Oxygen pressure dependence of the retrogrowth of oxidation‐induced stacking faults in (100) silicon (1978) (18)
- Forward I-V characteristics of Pt/n-GaAs Schottky barrier contacts (1974) (18)
- Diffusion Barriers - For Thin Film Metallizations (1991) (17)
- Diffusion and segregation of ion-implanted boron in silicon in dry oxygen ambients (1975) (17)
- Surface Layer Formation During the Chemical Mechanical Polishing of Copper Thin Films (1994) (17)
- Heats of formation of transition-metal silicides (1982) (16)
- Low Dielectric Constant Polymers For On-Chip Interlevel Dielectrics With Copper Metallization (1995) (16)
- Stresses in TaSix films sputter deposited on polycrystalline silicon (1987) (16)
- Deposition temperature effect on thermal stability of fluorinated amorphous carbon films utilized as low-K dielectrics (2001) (16)
- Direct observation of epitaxial islands of Pd2Si on (001) Si (1980) (15)
- Role of point defects in the growth of the oxidation-induced stacking faults in silicon. II. Retrogrowth, effect of HCl oxidation and orientation (1980) (15)
- Study on electrical characteristics of fluorinated polyimide film (1998) (15)
- Thermotransport studies in liquid alkali metal alloys (1973) (15)
- Stability of Sputter Deposited Al-Cu Bilayers on SiO 2 . (1992) (15)
- Ellipsometric measurements of the CoSi2 formation from very thin cobalt films on silicon (1992) (15)
- Stability of polycrystalline silicon‐on‐cobalt disilicide–silicon structures (1987) (15)
- Characterization of methyl-doped silicon oxide film deposited using Flowfill™ chemical vapor deposition technology (2002) (14)
- Characterization of the imidization process of Low K-fluorinated polymide film during thermal curing (1998) (14)
- Copper/Benzocyclobutene Interconnects for Sub‐100 nm Integrated Circuit Technology: Elimination of High‐Resistivity Metallic Liners and High‐Dielectric Constant Polish Stops (1999) (14)
- Copper drift in methyl-doped silicon oxide film (2002) (14)
- Oxygen partial pressure dependence of the fixed surface‐state charge QSS due to thermal oxidation of n‐ (100) silicon (1979) (14)
- A Study of the Phosphorus Gettering of Gold in Silicon by Use of Neutron Activation Analysis (1976) (13)
- Investigation of the mechanism responsible for the corrosion resistance of B implanted copper (1994) (13)
- An investigation of hydrogen concentration profiles in as‐deposited and annealed chemical vapor deposited SiO2 films (1988) (13)
- Plasma surface modification for ion penetration barrier in organosiloxane polymer (2002) (13)
- Silicide formation with codeposited titanium-tantalum alloys on silicon (1987) (13)
- Thermal stability of the aluminum/titanium carbide/silicon contact system (1984) (13)
- Investigations of The Low Dielectric Constant Fluorinated Polyimide for Use as The Interlayer Dielectric in ULSI (1995) (13)
- Basic Science in Silica Glass Polishing (1994) (13)
- Codeposited silicides in very-large-scale integration (1986) (13)
- Effects of dopants and excess silicon on the oxidation of TaSi2/polycrystalline silicon structures (1986) (12)
- Bias-temperature stability of the Cu(Mg)/SiO2/p-Si metal-oxide-semiconductor capacitors (1997) (12)
- Surface Segregation of Al of the Bilayers of Pure Cu and Cu-Al Alloy Films (2001) (12)
- Advanced interconnects and contact materials and processes for future integrated circuits : symposium held April 13-16, 1998, San Francisco, California, U.S.A. (1998) (11)
- In situ quadrupole mass spectroscopy studies of water and solvent coordination to copper(II) β-diketonate precursors: implications for the chemical vapor deposition of copper (1995) (11)
- R.F. diode sputtered platinum films (1974) (11)
- Completely passivated high conductivity copper films made by annealing Cu/Al bilayers (1996) (11)
- Electrical characteristics and hydrogen concentration of chemical vapor deposited silicon dioxide films: Effect of water treatment (1992) (11)
- Measuring the Phosphorus Concentration in Deposited Phosphosilicate Films (1979) (10)
- Characterization of charges in fluorinated polyimide film with different thermal history by using capacitance-voltage methods (1999) (10)
- Cation self-diffusion in barium oxide (BaO)* (1971) (10)
- Epitaxial quality of thin Ag films on GaAs(100) surfaces cleaned with various wet etching techniques (1996) (10)
- TiC as a diffusion barrier between Al and CoSi2 (1986) (9)
- Texture Analysis of CoGe2 Alloy Films Grown Heteroepitaxially on GaAs(100) Using Partially Ionized Beam Deposition (1997) (9)
- Hydrogen concentration profiles in as‐deposited and annealed phosphorus‐doped silicon dioxide films (1988) (9)
- Chemical Mechanical Planarization—An Introduction (2007) (9)
- Optical constants of transition-metal silicides (1983) (9)
- Scanning Electron Microscope Studies of Premature Breakdown Sites in GaAs IMPATT Testers (1974) (8)
- Intermetallic Reactions Between Copper and Magnesium as an Adhesion / Barrier Layer (1991) (8)
- Evolution of the Cu-Al Alloy/ SiO2 Interfaces during Bias Temperature Stressing (2001) (8)
- Chemical-Mechanical Polishing of Polymer Films: Comparison of Benzocyclobutene(BCB) and Parylene-N Films by XPS and AFM (1997) (8)
- Applications of CoSi 2 to VLSI and ULSI (1993) (8)
- Investigations Of The Chemical-Mechanical Polishing Of Polymer Films For ILD Applications (1995) (7)
- On “Self-diffusion in alpha titanium” (1964) (7)
- Role of Oxygen in Metal Silicide Formation and Properties (1999) (7)
- Separation of copper ion-induced and intrinsic polymer instabilities in polyarylether using triangular voltage sweep (2004) (7)
- A thermo-chemical study of the defect structure of barium oxide (1973) (7)
- Grain growth in boron doped LPCVD polysilicon films (1990) (7)
- Interactions of Copper with Interlayer Dielectrics and Adhesion Promoters / Diffusion Barriers. (1990) (7)
- DIFFUSION OF RARE EARTH ELEMENTS IN ALUMINUM. (1968) (7)
- STRESS-TEMPERATURE BEHAVIOR OF ELECTRON CYCLOTRON RESONANCE OXIDES AND THEIR CORRELATION TO HYDROGENOUS SPECIES CONCENTRATION (1995) (7)
- Properties and Applications of Silicides (1989) (6)
- Ultra Thin Sacrificial Diffusion Barriers - Control of Diffusion Across the Cu-SiO 2 Interface (1993) (6)
- Refractory silicides for low resistivity gates and interconnects (1979) (6)
- Rapid thermal processing of silicon dioxide films in metal–oxide semiconductor capacitors: High‐temperature SiO2 decomposition at the SiO2–Si interfaces in inert ambient (1989) (6)
- Contamination of silicon and oxidized silicon wafers during plasma etching (1979) (6)
- Reactive‐Ion Etching (RIE) of TaSi2 / n + Polysilicon Bilayers (1988) (5)
- Thermotransport of beryllium and mercury in liquid sodium (1973) (5)
- Oxidation of Arsenic Implanted Polycrystalline Silicon (1983) (5)
- Thermal stability of polyimidesiloxane (SIM‐2000) (1988) (5)
- Advanced metallization for devices and circuits--science, technology, and manufacturability : symposium held April 4-8, 1994, San Francisco, California, U.S.A. (1994) (5)
- Equilibration of nonstoichiometric Ta‐Si deposits on polycrystalline silicon at high temperatures (1988) (5)
- Tantalum silicide/polycrystalline silicon—High conductivity gates for CMOS LSI applications (1981) (5)
- Chemical-Mechanical Planarization of the Polymer Interlayer Dielectrics (1998) (5)
- Surface modification of silicon by partially ionized beam deposited aluminum (1989) (5)
- Sodium passivation dependence on phosphorus concentration in tetraethylorthosilicate plasma‐enhanced chemical vapor deposited phosphosilicate glasses (1993) (5)
- Copper Metallization Manufacturing Issues for Future ICs (1994) (5)
- Interaction of Cu and CoSi 2 (1990) (5)
- Electrical stability and microstructural evolution in thin films of high conductivity copper alloys (1999) (5)
- MOS Compatibility of High-Conductivity TaSi/sub 2//n+ Poly-Si Gates (1980) (5)
- Low‐temperature epitaxial growth of CoGe2(001)/GaAs(100) films using the partially ionized beam deposition technique (1996) (5)
- The capacitance‐voltage characteristics and hydrogen concentration in phospho‐silicate glass films: Relation to phosphorus concentration and annealing effects (1992) (5)
- Stability of LPCVD Polysilicon Gates on Thin Oxides (1980) (4)
- Copper interconnection schemes: elimination of the need of diffusion barrier/adhesion promoter by the use of corrosion-resistant low-resistivity-doped copper (1994) (4)
- Silicon Dioxide, Nitride, and Oxynitride (2003) (4)
- The Effect of Grain Boundaries and Substrate Interactions with Hydrogen on the CVD Growth of Device-Quality Copper. (1991) (4)
- Optical Properties of a Polyimide for Waveguide Applications in On-Chip Interconnects (1999) (4)
- Electrical Behavior of Cu Thin Fluorinated PECVD Oxide MIS Capacitors (2000) (4)
- Interaction of Copper Film with Silicides (1990) (4)
- Investigation of Aluminum‐Indium Alloys for Interconnect Applications (2000) (4)
- In Situ Study of Stresses Generated During the Formation of Cobalt Disilicide and the Effect of Post Silicide Processing (1990) (4)
- Surface and Interface Modification of Copper for Electronic Application (1994) (4)
- Epitaxial growth induced by phosphorus tribromide doping of polycrystalline silicon films on silicon (1985) (4)
- Diffusion Barriers in Semiconductor Devices/Circuits (2005) (4)
- Chemical-Mechanical Polishing of Tungsten with Hologen-Based Slurries (1994) (4)
- Post‐CMP Cleaning (2007) (4)
- Subsurface cobalt diffusion in silicon single crystal from infinitesimally small cobalt diffusion source (1987) (4)
- Use of a rastered microbeam to study lateral diffusion of interest to microelectronics (1994) (3)
- PASSIVATION OF COPPER BY LOW TEMPERATURE ANNEALING OF Cu/Mg/SiO2 BILAYERS (1996) (3)
- Observation of Reduced Oxidation Rates for Plasmaassisted CVD Copper Films (1993) (3)
- Low-κ polymers (2003) (3)
- Metallization for Integrated Circuit Manufacturing (1995) (3)
- Effect of oxygen contamination on the properties of cosputtered tantalum silicide (1984) (3)
- The Effect of Interfacial Chemistry on Metal Ion Penetration into Polymeric Films (2002) (3)
- Transition Metal Silicides—Low Resistivity Alternatives for Polysilicon and Metals in Integrated Circuits (1984) (3)
- Reactions of Titanium Films with thin Silicon Dioxide, Nitride, and Oxynitride Films During Rapid Thermal Annealing (1992) (3)
- Chapter II – Properties (1983) (3)
- Homogenization of the Bilayers of Cu-Al Alloy and Pure Copper to Produce CU-0.3 at.% Al Alloy Films (1998) (3)
- Oxide CMP Processes Mechanisms and Models (2007) (3)
- Interface control of electrical, chemical, and mechanical properties : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A. (1994) (3)
- Directions in the Chemical Mechanical Planarization Research (1999) (3)
- Interactions and Stability of Cu on CoSi 2 (1992) (3)
- Abstract: Electrical activity of epitaxial stacking faults (1977) (3)
- Chemical-Mechanical polishing of parylene- n films: evaluation by X-Ray photoelectron spectroscopy and atomic force microscopy (1997) (2)
- Capacitance-Voltage, Current Voltage, and Thermal Stability of Copper Alloyed With Aluminum or Magnesium (1998) (2)
- Characterization of methyl-doped silicon oxide film for inter-layer dielectrics application (2001) (2)
- Ion Jimplantation to Inhibit Corrosion of Copper (1992) (2)
- Modeling of Temperature Increase Due to Joule Heating During Electromigration Measurements (1996) (2)
- Barriers to Strain Relaxation in Epitaxial Fluorides on Si(111) (1993) (2)
- Chapter IV – Formation (1983) (2)
- Chapter 2 – Dielectric properties (2003) (2)
- Oxidation Resistant Dilute Copper (Boron) Alloy Films Prepared by DC-Magnetron Cosputtering (1996) (2)
- Annealing of Low Pressure Chemical Vapor Deposited Phosphorus Glass Films‐Effect on Electrical Properties and Concentrations of Hydrogen Containing Species (1992) (2)
- Effect of the dissolved oxygen concentration on the growth of thin oxide films on silicon (1986) (2)
- SELF DIFFUSION IN METALS (1965) (2)
- Stability of Silicide Films Under Post-Annealing: a Dopant Effect (1993) (2)
- Kinetics of Intermetallic Formation in Free Standing Cu/Mg Multilayer Thin Films (1992) (2)
- Cobalt Silicide Formation on Polysilicon: Dopant Effects on Reaction Kinetics and Silicide Properties (1990) (2)
- CMP Variables and Manipulations (2007) (2)
- The Surface Morphology of Titanium Nitride / Copper Bilayers Annealed at High Temperatures (1993) (2)
- The Stability of TiH 2 Used as Diffusion Barrier on SiO 2 Substrates (1994) (1)
- ANODIC OXIDE ON GALLIUM ARSENIDE- QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER SPECTROSCOPY AND NEUTRON ACTIVATION ANALYSIS (1977) (1)
- Stability of Cu on Epoxy Siloxane Polymer under Bias Temperature Stress (2006) (1)
- Chapter III – Thermodynamic Considerations (1983) (1)
- Fabrication of a 64K dynamic MOS RAM with tantalum silicide replacing polysilicon (1980) (1)
- Investigation of the Homovalent Impurity in Aluminum to Form Alloys With Enhanced Interconnect Reliability (1998) (1)
- Schottky device behavior of n-Si/Pd2Si/Al and n-Si/CoSi2/Al contacts with and without a Ta2N diffusion barrier (1993) (1)
- Thermal Curing Conditions for Low K-Fluorinated Polyimide Film for Use as the Interlayer Dielectric in ULSI (1996) (1)
- Surface Passivation of Cu by Annealing Cu/Al Multilayer Films (1995) (1)
- The Surface Damage in SiO 2 Caused by Chemical Mechanical Polishing on Ic-60 Pads (1994) (1)
- Chapter V – Oxidation (1983) (1)
- Time‐of‐flight atom‐probe study of a W‐Zr field emitter (1980) (1)
- Surface cleaning of copper by thermal and plasma treatment in reducing and inert ambients (1998) (1)
- X-ray Photoelectron Spectroscopic Studies of Cu-AI alloy/SiO 2 Interfaces (1999) (1)
- Neutron Activation Analysis (2001) (1)
- Chemical-Mechanical Polishing of Copper in Glycerol Based Slurries (1996) (0)
- Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A. (1990) (0)
- Generic Reliability of the High-Conductivity TaSi2/n+ Poly-Si Gate MOS Structure (1980) (0)
- Erratum: Thermal oxidation of hafnium silicide films on silicon (1981) (0)
- EFFECT OF GROWTH PARAMETERS ON THE CHEMICAL VAPOR DEPOSITION (CVD) OF BORON NITRIDE AND PHOSPHORUS-DOPED BORON NITRIDE (1980) (0)
- Chapter VI – Integrated-Circuit Fabrication (1983) (0)
- SYSTEMS FOR PERFORMING CHEMICAL MECHANCAL PLANARZATION AND PROCESS FOR CONDUCTING SAME Inventors : (2017) (0)
- Reactive Ion Etching of the fluorinated polyimide film (1996) (0)
- A method of fabricating an integrated circuit (1982) (0)
- GRAIN BOUNDARY AND LATTICE DIFFUSION OF CHROMIUM IN ZIRCONIUM (1964) (0)
- Instabilities in the Mechanical Stress in Deposited SiO 2 Films Caused by Thermal Treatments (1990) (0)
- Rutherford backscattering & TEM studies of nitrogen, oxygen & argon incorporation in sputter-deposited titanium nitride films (1987) (0)
- Appendix ‐ Problem Sets (2007) (0)
- An Overview of High Melting Point Metallization (1991) (0)
- Microelectronics technology and process integration : 20-21 October 1994, Austin, Texas (1994) (0)
- Contacts and Vias (2001) (0)
- Use of Advantageous Impurity Effects in Metallization (1995) (0)
- The effect of hydrogenous species on the properties and reliability of the dielectrics and metals used in multilevel metallization (1994) (0)
- CMP of Other Materials and New CMP Applications (2007) (0)
- PLASMA‐GROWN OXIDE ON GALLIUM ARSENIDE. SEMIQUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER SPECTROSCOPY AND NEUTRON ACTIVATION ANALYSIS (1978) (0)
- Historical Motivations for CMP (2007) (0)
- Pulsed electrodeposition of copper metallization from an alkaline bath (1999) (0)
- Growth of Ultra-Thin Oxides on Silicon - A Review of Experimental Data and Theoretical Models (1988) (0)
- Growth Kinetics and Materials Properties of Cu 5 Si (1994) (0)
- TUNGSTEN CMP PROCESSES (2007) (0)
- Chapter 12 – Reliability (2003) (0)
- SCANNING ELECTRON MICROSCOPE STUDY OF PREMATURE BREAKDOWN SITES IN GAAS IMPATT TESTERS (1974) (0)
- Current induced heating of the codeposited metal–silicon runners to form low‐resistivity crystallized disilicides (1989) (0)
- Technology Trends in Physical and Chemical Vapor Deposition Techniques (1991) (0)
- Abstract: Oxidation induced stacking faults in n‐ and p‐type (100) silicon (1977) (0)
- Characterization of Cu-Al alloy/SiO 2 interface microstructure (2000) (0)
- Process for manufacturing a cobalt silicide metallization for a transistor (1982) (0)
- Formation of Cobalt Silicides in Arsenic Implanted Cobalt on Silicon System (1990) (0)
- 4502209 Forming low-resistance contact to silicon (1985) (0)
- Advanced Metallizations In Microelectronics (2014) (0)
- Novel Epoxy Siloxane Polymer as Low-K Dielectric (2004) (0)
- DIFFUSION BONDING IN VANADIUM AND ZIRCONIUM. (1967) (0)
- A method of manufacturing a semiconductor device in a Cobaltsilicidschicht (1982) (0)
- Mechanical and Electrochemical Concepts for CMP (2007) (0)
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