Simon Sze
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American electrical engineer
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Engineering
Simon Sze's Degrees
- PhD Electrical Engineering Stanford University
- Masters Electrical Engineering Stanford University
- Bachelors Electrical Engineering National Taiwan University
Why Is Simon Sze Influential?
(Suggest an Edit or Addition)According to Wikipedia, Simon Min Sze, or Shi Min , was a Taiwanese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967. Early life and education Simon Min Sze was born in Nanjing, Jiangsu, and grew up in Taiwan. After graduating from the National Taiwan University in 1957, he received a master's degree from the University of Washington in 1960 and a doctorate from Stanford University in 1963.
Simon Sze's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Physics of semiconductor devices (1969) (15419)
- Physics of Semiconductor Devices: Sze/Physics (2006) (3846)
- Semiconductor Devices: Physics and Technology (1985) (3436)
- Overview of emerging nonvolatile memory technologies (2014) (503)
- Current Transport and Maximum Dielectric Strength of Silicon Nitride Films (1967) (435)
- High-speed semiconductor devices (1990) (428)
- AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p‐n JUNCTIONS IN Ge, Si, GaAs, AND GaP (1966) (418)
- Generalized guide for MOSFET miniaturization (1980) (334)
- Modern semiconductor device physics (1997) (218)
- Photoelectric Determination of the Image Force Dielectric Constant For Hot Electrons in Schottky Barriers (1964) (191)
- Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films (2010) (186)
- Silicon schottky barrier diode with near-ideal I-V characteristics (1968) (156)
- Fundamentals of Semiconductor Fabrication (2003) (146)
- SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain (1968) (144)
- Microwave avalanche diodes (1971) (116)
- Physical and chemical mechanisms in oxide-based resistance random access memory (2015) (116)
- A Practical Implementation of Parallel Dynamic Load Balancing for Adaptive Computing in VLSI Device Simulation (2002) (105)
- Atomic-level quantized reaction of HfOx memristor (2013) (97)
- Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography. (2014) (97)
- Range-energy relation of hot electrons in gold (1964) (97)
- Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory (2010) (95)
- Computer simulation of electron energy levels for different shape InAs/GaAs semiconductor quantum dots (2001) (82)
- Erratum: Quantum‐Mechanical Reflection of Electrons at Metal‐Semiconductor Barriers: Electron Transport in Semiconductor‐Metal‐Semiconductor Structures (1966) (81)
- Effects of grain boundaries on laser crystallized poly-Si MOSFET's (1981) (75)
- Effects of NH/sub 3/-plasma nitridation on the electrical characterizations of low-k hydrogen silsesquioxane with copper interconnects (2000) (74)
- The effects of plasma treatment for low dielectric constant hydrogen silsesquioxane (HSQ) (1998) (72)
- Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment (2002) (70)
- Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory (2017) (68)
- Redox Reaction Switching Mechanism in RRAM Device With Structure (2011) (65)
- Effect of Annealing on Defect Elimination for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistor (2014) (65)
- Enhancing the Oxygen Plasma Resistance of Low-k Methylsilsesquioxane by H2 Plasma Treatment (1999) (63)
- B.S.T.J. brief: A low-noise metal-semiconductor-metal (MSM) microwave oscillator (1971) (62)
- Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory (2013) (61)
- Memory characteristics of Co nanocrystal memory device with HfO (2007) (61)
- Hot-Electron Transport in Semiconductor-Metal-Semiconductor Structures (1966) (60)
- Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application (2013) (60)
- Nickel nanocrystals with HfO2 blocking oxide for nonvolatile memory application (2007) (59)
- A Novel Nanowire Channel Poly-Si TFT Functioning as Transistor and Nonvolatile SONOS Memory (2007) (57)
- EQUALITY OF THE TEMPERATURE DEPENDENCE OF THE GOLD_SILICON SURFACE BARRIER AND THE SILICON ENERGY GAP IN Au n‐TYPE Si DIODES (1964) (56)
- Ballistic Mean Free Path Measurements of Hot Electrons in Au Films (1965) (53)
- Charge Quantity Influence on Resistance Switching Characteristic During Forming Process (2013) (52)
- Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment (2011) (51)
- Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices (2013) (50)
- Influence of nanocrystals on resistive switching characteristic in binary metal oxides memory devices (2011) (50)
- Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode. (2017) (49)
- Effects of H2 plasma treatment on low dielectric constant methylsilsesquioxane (1999) (49)
- Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications (2012) (47)
- The Effect of Silicon Oxide Based RRAM with Tin Doping (2012) (47)
- Electron energy state dependence on the shape and size of semiconductor quantum dots (2001) (47)
- Bulk Oxygen–Ion Storage in Indium–Tin–Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory (2016) (46)
- The Novel Improvement of Low Dielectric Constant Methylsilsesquioxane by N 2 O Plasma Treatment (1999) (46)
- A Novel Approach of Fabricating Germanium Nanocrystals for Nonvolatile Memory Application (2004) (46)
- Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment (2017) (44)
- Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory (2014) (44)
- Characteristics of hafnium oxide resistance random access memory with different setting compliance current (2013) (43)
- Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array. (2017) (43)
- 1.55-mum and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector. (2001) (43)
- Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications (2011) (42)
- Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory (2015) (42)
- A distributed charge storage with GeO2 nanodots (2004) (42)
- Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices (2011) (42)
- Improvement in Integration Issues for Organic Low-k Hybrid-Organic-Siloxane-Polymer (2001) (42)
- Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment (2012) (41)
- Performance and characteristics of double layer porous silicon oxide resistance random access memory (2013) (41)
- Recovering Dielectric Loss of Low Dielectric Constant Organic Siloxane during the Photoresist Removal Process (2002) (40)
- Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment (2013) (39)
- Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture (2018) (39)
- Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application (2008) (39)
- Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory (2014) (38)
- Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process (2013) (38)
- Silicon introduced effect on resistive switching characteristics of WOX thin films (2012) (37)
- Electron Charging and Discharging Effects of Tungsten Nanocrystals Embedded in Silicon Dioxide for Low-Voltage Nonvolatile Memory Technology (2005) (37)
- Electron energy level calculations for cylindrical narrow gap semiconductor quantum dot (2001) (37)
- Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory (2014) (37)
- LiSiOX-Based Analog Memristive Synapse for Neuromorphic Computing (2019) (36)
- Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure (2011) (36)
- Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices (2007) (36)
- Dependence of energy gap on magnetic field in semiconductor nano-scale quantum rings (2003) (36)
- Dehydroxyl effect of Sn-doped silicon oxide resistance random access memory with supercritical CO2 fluid treatment (2012) (35)
- A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices (2001) (35)
- Efficient Implementation of Boolean and Full-Adder Functions With 1T1R RRAMs for Beyond Von Neumann In-Memory Computing (2018) (33)
- Endurance Improvement Technology With Nitrogen Implanted in the Interface of ${\rm WSiO}_{\bf x}$ Resistance Switching Device (2013) (33)
- Eliminating dielectric degradation of low-k organosilicate glass by trimethylchlorosilane treatment (2002) (32)
- Energy and coordinate dependent effective mass and confined electron states in quantum dots (2001) (32)
- Semiconductor Devices (1985) (32)
- Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor (2014) (32)
- Bipolar resistive switching of chromium oxide for resistive random access memory (2011) (31)
- Semiconductor devices : pioneering papers (1991) (31)
- Improved memory window for Ge nanocrystals embedded in SiON layer (2006) (30)
- Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices. (2020) (30)
- Resistive switching characteristics of gallium oxide for nonvolatile memory application (2013) (30)
- A novel parallel adaptive Monte Carlo method for nonlinear Poisson equation in semiconductor devices (2003) (30)
- Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory (2015) (29)
- Schottky MOSFET for VLSI (1981) (29)
- Asymmetric Carrier Conduction Mechanism by Tip Electric Field in $\hbox{WSiO}_{X}$ Resistance Switching Device (2012) (28)
- Metal‐Insulator‐Semiconductor Capacitors (2006) (28)
- Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices (2013) (28)
- Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models (2002) (27)
- Hydrogen induced redox mechanism in amorphous carbon resistive random access memory (2014) (26)
- Highly durable and flexible gallium-based oxide conductive-bridging random access memory (2019) (26)
- Reconfigurable Boolean Logic in Memristive Crossbar: The Principle and Implementation (2019) (26)
- Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels (2007) (26)
- Resistance Switching Characteristics Induced by O2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory. (2017) (25)
- Quasisuperlattice storage: A concept of multilevel charge storage (2004) (25)
- Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors (2014) (25)
- Characterization of porous silicate for ultra-low k dielectric application (2002) (25)
- Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory (2016) (24)
- Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory (2018) (23)
- The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory (2013) (23)
- Tungsten oxide/tungsten nanocrystals for nonvolatile memory devices (2008) (23)
- Physics of semiconductor devices / S.M. Sze (1981) (22)
- Role of Oxygen in Amorphous In-Ga-Zn-O Thin Film Transistor for Ambient Stability (2013) (22)
- Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment (2014) (22)
- Investigation of resistive switching in copper/InGaZnO/Al2O3-based memristor (2019) (22)
- Electrical Transport Phenomena in Aromatic Hydrocarbon Polymer (2003) (22)
- Enhancing the resistance of low-k hydrogen silsesquioxane (HSQ) to wet stripper damage (2001) (22)
- Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors (2019) (21)
- Effectively Blocking Copper Diffusion at Low-k Hydrogen Silsesquioxane/Copper Interface (1999) (21)
- Improving Performance by Doping Gadolinium Into the Indium-Tin–Oxide Electrode in HfO2-Based Resistive Random Access Memory (2016) (21)
- Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride- Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid (2015) (21)
- Performance Enhancement for Tungsten-Doped Indium Oxide Thin Film Transistor by Hydrogen Peroxide as Cosolvent in Room-Temperature Supercritical Fluid Systems. (2019) (20)
- The effect of ammonia plasma treatment on low-k methyl-hybrido-silsesquioxane against photoresist stripping damage (2001) (20)
- Ambipolar Schottky-barrier TFTs (2002) (20)
- An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory (2015) (20)
- Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory (2015) (20)
- Effective strategy for porous organosilicate to suppress oxygen ashing damage (2002) (20)
- TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology (2018) (20)
- The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based Selector (2018) (20)
- Formation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory application (2007) (20)
- Investigating the improvement of resistive switching trends after post-forming negative bias stress treatment (2011) (20)
- Improvement on Intrinsic Electrical Properties of Low‐k Hydrogen Silsesquioxane/Copper Interconnects Employing Deuterium Plasma Treatment (2000) (20)
- Design considerations of high-efficiency GaAs IMPATT diodes (1973) (20)
- Analytical modeling of polycrystalline silicon emitter bipolar transistors under high-level injection (1994) (20)
- NONVOLATILE MEMORIES Materials, Devices and Applications (2012) (20)
- Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide (2012) (20)
- p‐n Junctions (2006) (19)
- Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory (2014) (19)
- A Novel Parallel Approach for Quantum Effect Simulation in Semiconductor Devices (2003) (19)
- A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory (2018) (19)
- Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction (2008) (18)
- Bipolar resistive switching characteristics of tungsten-doped indium–zinc oxide conductive-bridging random access memory (2019) (18)
- Trimethylchlorosilane Treatment of Ultralow Dielectric Constant Material after Photoresist Removal Processing (2002) (18)
- Optical and Electrical Characteristics of CO2-Laser-Treated Mg-Doped GaN Film (2000) (18)
- Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications (2017) (18)
- Induced base transistor fabricated by molecular beam epitaxy (1986) (18)
- Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access Memory (2018) (18)
- Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory (2013) (18)
- High-Precision Symmetric Weight Update of Memristor by Gate Voltage Ramping Method for Convolutional Neural Network Accelerator (2020) (18)
- Carrier Transport and Multilevel Switching Mechanism for Chromium Oxide Resistive Random-Access Memory (2011) (17)
- Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices (2013) (17)
- Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide (2011) (17)
- Effects of Nitrogen on Amorphous Nitrogenated InGaZnO (a-IGZO:N) Thin Film Transistors (2016) (17)
- Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology (2020) (17)
- Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer (2018) (17)
- Unit-cube expression for space-charge resistance (1967) (17)
- Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer (2006) (16)
- High performance of graphene oxide-doped silicon oxide-based resistance random access memory (2013) (16)
- Investigation of low operation voltage InZnSnO thin-film transistors with different high-k gate dielectric by physical vapor deposition (2018) (16)
- Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for $\hbox{SiO}_{2}$-Based Structure (2013) (16)
- Direct observation of grain boundary effects in polycrystalline silicon thin‐film transistors (1982) (16)
- Formation and nonvolatile memory characteristics of multilayer nickel-silicide NCs embedded in nitride layer (2008) (16)
- Effect of interfacial layer on device performance of metal oxide thin-film transistor with a multilayer high-k gate stack (2018) (16)
- A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFET (2002) (15)
- Moisture-Induced Material Instability of Porous Organosilicate Glass (2003) (15)
- Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer (2013) (15)
- Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors (2013) (14)
- Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3:ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence (2016) (14)
- Pi-shape gate polycrystalline silicon thin-film transistor for nonvolatile memory applications (2007) (14)
- Enhancement of the stability of resistive switching characteristics by conduction path reconstruction (2013) (14)
- Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High‐k Spacer Structure (2017) (14)
- Reliability of Multistacked Chemical Vapor Deposited Ti/TiN Structure as the Diffusion Barrier in Ultralarge Scale Integrated Metallization (2000) (14)
- Effects of hydrogen on electrical and chemical properties of low-k hydrogen silsesquioxane as an intermetal dielectric for nonetchback processes (1999) (14)
- High performance and high reliability polysilicon thin-film transistors with multiple nano-wire channels (2004) (14)
- Insertion of a Si layer to reduce operation current for resistive random access memory applications (2013) (14)
- Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application (2011) (13)
- Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices (2016) (13)
- Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment (2015) (13)
- Investigation of the Capacitance-Voltage Electrical Characteristics of Thin-film Transistors Caused by Hydrogen Diffusion under Negative Bias Stress in a Moist Environment. (2019) (13)
- Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory (2016) (13)
- 0.15 µm Channel-length MOSFET's fabricated using e-beam lithography (1982) (13)
- MOSFETs (2021) (12)
- Ultra-Low Switching Voltage Induced by Inserting SiO2 Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory (2016) (12)
- Ultralow Power Resistance Random Access Memory Device and Oxygen Accumulation Mechanism in an Indium–Tin-Oxide Electrode (2016) (12)
- Scanning the issue - Special issue on nanoelectronics and nanoscale processing (2003) (12)
- Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment (2016) (12)
- Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing (2020) (12)
- The resistive switching characteristics in TaON films for nonvolatile memory applications (2013) (12)
- Calculation of induced electron states in three-dimensional semiconductor artificial molecules (2002) (12)
- The influence on electrical characteristics of amorphous indium tungsten oxide thin film transistors with multi-stacked active layer structure (2018) (11)
- Improvement of post-chemical mechanical planarization characteristics on organic low k methylsilsesquioxane as intermetal dielectric (2000) (11)
- Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode (2016) (11)
- Performance improvements of tungsten and zinc doped indium oxide thin film transistor by fluorine based double plasma treatment with a high-K gate dielectric (2018) (11)
- Optimization of the Anti-Punch-Through Implant for Electrostatic Discharge Protection Circuit Design (2003) (11)
- High Performance Transparent a-IGZO Thin Film Transistors With ALD-HfO2 Gate Insulator on Colorless Polyimide Substrate (2020) (11)
- Controllable Set Voltage in Bilayer ZnO:SiO2/ZnOx Resistance Random Access Memory by Oxygen Concentration Gradient Manipulation (2014) (11)
- Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM (2018) (11)
- Electrical Enhancement of Solid Phase Crystallized Poly-Si Thin-Film Transistors with Fluorine Ion Implantation (2006) (11)
- Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applications (2003) (11)
- Effect of Shape and Size on Electron Transition Energies of InAs Semiconductor Quantum Dots (2001) (10)
- Preventing dielectric damage of low-k organic siloxane by passivation treatment (2002) (10)
- Semiconductor device development in the 1970's and 1980's—A perspective (1981) (10)
- Nonvolatile Si∕SiO2∕SiN∕SiO2∕Si type polycrystalline silicon thin-film-transistor memory with nanowire channels for improvement of erasing characteristics (2007) (10)
- Application of Field-Induced Source/Drain Schottky Metal-Oxide-Semiconductor to Fin-Like Body Field-Effect Transistor (2002) (10)
- Effect of charge quantity on conduction mechanism of high- and low-resistance states during forming process in a one-transistor–one-resistor resistance random access memory (2017) (10)
- Confirmation of filament dissolution behavior by analyzing electrical field effect during reset process in oxide-based RRAM (2016) (10)
- Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory (2013) (10)
- Nickel silicide nanocrystals embedded in SiO2 and HfO2 for nonvolatile memory application (2007) (9)
- Effects of erbium doping of indium tin oxide electrode in resistive random access memory (2016) (9)
- DRAM pricing trends — The π rule (1985) (9)
- Elimination of Dielectric Degradation for Chemical-Mechanical Planarization of Low-k Hydrogen Silisesquioxane (2001) (9)
- Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory (2009) (8)
- Improving Resistance Switching Characteristics with SiGeOx/SiGeON Double Layer for Nonvolatile Memory Applications (2011) (8)
- Silicon Delta Doping of GaInP Grown by Low-Pressure Metalorganic Chemical Vapor Deposition (1995) (8)
- Design considerations of low-noise high-efficiency silicon IMPATT diodes (1973) (8)
- Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments (2010) (8)
- The influence of temperature on set voltage for different high resistance state in 1T1R devices (2019) (8)
- Study on SONOS nonvolatile memory technology using high-density plasma CVD silicon nitride (2004) (8)
- Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO2/TiN Resistive Random Access Memory (2020) (8)
- Synaptic behaviour of TiO x /HfO2 RRAM enhanced by inserting ultrathin Al2O3 layer for neuromorphic computing (2021) (8)
- Improved reliability of Mo nanocrystal memory with ammonia plasma treatment (2009) (7)
- Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology. (2010) (7)
- Enhancement of Surface Chemical and Physical Properties of Germanium–Sulfur Thin Film Using a Water‐Supplemented Carbon Dioxide Supercritical Fluid Treatment Technique (2018) (7)
- Improvement of low dielectric constant methylsilsesquioxane by boron implantation treatment (2001) (7)
- Influence of forming process on resistance switching characteristics of In2O3/SiO2 bi-layer (2013) (7)
- Electron energy state spin-splitting in 3D cylindrical semiconductor quantum dots (2002) (7)
- InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D (2018) (7)
- Impact of Electroforming Current on Self-Compliance Resistive Switching in an ${\rm ITO}/{\rm Gd{:}SiO}_{\rm x}/{\rm TiN}$ Structure (2013) (7)
- Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory (2008) (7)
- A high-speed MIM resistive memory cell with an inherent vanadium selector (2020) (7)
- Effects of sub-gate bias on the operation of Schottky-barrier SOI MOSFETs having nano-scale channel (2002) (7)
- Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition (1998) (7)
- Complementary resistive switching behavior for conductive bridge random access memory (2016) (7)
- Multilayered ion-implanted BARITT diodes with improved efficiency (1977) (7)
- Monotone Iterative Method for Parallel Numerical Solution of 3 D Semiconductor Poisson Equation (2001) (6)
- Metal-semiconductor impatt diode (1969) (6)
- Memory effect of oxide/SiC:O/oxide sandwiched structures (2004) (6)
- Low power consumption resistance random access memory with Pt/InOx/TiN structure (2013) (6)
- High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO2 Pellets for the Nonvolatile Memory Device Application (2010) (6)
- A Novel Structure to Reduce Degradation Under Mechanical Bending in Foldable Low Temperature Polysilicon TFTs Fabricated on Polyimide (2020) (6)
- Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications (2004) (6)
- A Fabrication of Germanium Nanocrystal Embedded in Silicon-Oxygen-Nitride Layer (2006) (6)
- Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Film (2014) (6)
- Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory (2016) (6)
- Rapid-Thermal-Processed BaTiO3 Thin Films Deposited by Liquid-Source Misted Chemical Deposition (1998) (6)
- Formation and nonvolatile memory characteristics of W nanocrystals by in-situ steam generation oxidation (2010) (6)
- Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium–Tin Oxide Insulator in Resistive Random Access Memory (2016) (6)
- Overcoming Limited Resistance in 1T1R RRAM Caused by Pinch-Off Voltage During Reset Process (2019) (6)
- Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device (2020) (6)
- Role of InGaOx resistive switching characteristics on the performances of resistance random access memory of Pt/IGO/TiN device (2013) (6)
- Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment (2009) (6)
- Communication—Effects of Oxygen Concentration Gradient on Resistive Switching Behavior in Oxygen Vacancy-Rich Electrodes (2016) (6)
- Annealing effects on resistive switching of IGZO-based CBRAM devices (2020) (6)
- Effect of Annealing Treatment on Performance of Ga2O3 Conductive-Bridging Random-Access Memory (2020) (5)
- A Computational Technique for Electron Energy States Calculation in Nano-Scopic Three-Dimensional InAs/GaAs Semiconductor Quantum Rings Simulation (2002) (5)
- Indium Diffusion Behavior and Application in HfO2‐Based Conductive Bridge Random Access Memory (2019) (5)
- Nano-scale implantless Schottky-barrier SOI FinFETs with excellent ambipolar performance (2002) (5)
- Improved efficiency microwave BARITT oscillators by delayed injection (1975) (5)
- Investigation of the forming process under UV illumination in HfO2-based resistance random access memory with a transparent electrode (2019) (5)
- A computational method for energy level spin splitting simulation in InAs/GaAs semiconductor quantum dots (2002) (5)
- Parallel dynamic load balancing for semiconductor device simulations on a linux cluster (2001) (5)
- Impact of annealing environment on performance of InWZnO conductive bridge random access memory (2021) (5)
- Reducing operation voltages by introducing a low-k switching layer in indium–tin-oxide-based resistance random access memory (2016) (5)
- Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Applications (2018) (5)
- Adaptive finite volume simulation of semiconductor devices on cluster architecture (2000) (5)
- Improved Performance of F-Ions-Implanted Poly-Si Thin-Film Transistors Using Solid Phase Crystallization and Excimer Laser Crystallization (2007) (5)
- Adjustable built-in resistor on oxygen-vacancy-rich electrode-capped resistance random access memory (2016) (5)
- High performance, excellent reliability multifunctional graphene oxide doped memristor achieved by self-protect ive compliance current structure (2014) (5)
- Effects of O2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin films (2000) (5)
- Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM (2020) (5)
- Suppression of Edge Effect Induced by Positive Gate Bias Stress in Low-Temperature Polycrystalline Silicon TFTs With Channel Width Extension Over Source/Drain Regions (2020) (5)
- 0.15 µm Channel-length MOSFETs fabricated using e-beam lithography (1982) (5)
- The nonlinearity of the reverse current-voltage characteristics of a p-n junction near avalanche breakdown (1967) (5)
- Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory (2021) (4)
- Performance improvement after nitridation treatment in HfO2-based resistance random-access memory (2018) (4)
- InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment (2017) (4)
- Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitride (2010) (4)
- Hopping conduction properties of the Sn:SiOX thin-film resistance random access memory devices induced by rapid temperature annealing procedure (2015) (4)
- A comprehensive study of enhanced characteristics with localized transition in interface-type vanadium-based devices (2020) (4)
- Quasi-Superlattice Storage A Concept of Multilevel Charge Storage (2004) (4)
- NiSiGe nanocrystals for nonvolatile memory devices (2009) (4)
- Co-sputtered Ru-Ti alloy electrodes for DRAM applications (1999) (4)
- Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices (2011) (4)
- Temperature-dependent memory characteristics of silicon-oxide-nitride-oxide-silicon thin-film-transistors (2010) (4)
- Investigating Selectorless Property within Niobium Devices for Storage Applications. (2022) (4)
- Magnetic field dependence of electron energy states in 3D nano-scopic quantum rings (2001) (4)
- Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors (2012) (4)
- Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment (2016) (4)
- Heterojunction Channels in Oxide Semiconductors for Visible‐Blind Nonvolatile Optoelectronic Memories (2020) (4)
- Influence of hydrogen plasma treatment on charge storage characteristics in high density tungsten nanocrystal nonvolatile memory (2011) (4)
- Gate Dielectric Breakdown in A-InGaZnO Thin Film Transistors With Cu Electrodes (2021) (4)
- Thermal Stability of Co-Sputtered Ru–Ti Alloy Electrodes for Dynamic Random Access Memory Applications (1998) (4)
- Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors (2012) (4)
- Microwave BARITT diode with retarding field—An investigation (1977) (4)
- Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors (2014) (4)
- Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications (2019) (4)
- Effect of tungsten doping on the variability of InZnO conductive-bridging random access memory (2020) (3)
- Growth and electrical characterization of Si delta‐doped GaInP by low pressure metalorganic chemical vapor deposition (1996) (3)
- Realizing forming-free characteristic by doping Ag into HfO2-based RRAM (2021) (3)
- Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices (2009) (3)
- Stabilizing resistive random access memory by constructing an oxygen reservoir with analyzed state distribution. (2020) (3)
- Formation and nonvolatile memory effect of nickel-oxygen-silicon nanoparticles (2007) (3)
- Passivation Effect of Poly-Si Thin-Film Transistors With Fluorine-Ion-Implanted Spacers (2008) (3)
- Impact of O2 plasma treatment on novel amorphous oxide InWZnO on conductive bridge random access memory (2021) (3)
- Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory (2019) (3)
- Thermal Impact on the Activation of Resistive Switch in Silicon Oxide Based RRAM (2012) (3)
- Memory Effect of Oxide'Oxygen-Incorporated Silicon Carbide'Oxide Sandwiched Structure (2005) (3)
- An implementation of parallel dynamic load balancing for adaptive computing in VLSI device simulation (2001) (3)
- Recovery of failed resistive switching random access memory devices by a low-temperature supercritical treatment (2017) (3)
- Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure (2009) (3)
- Characteristics of poly-Si TFT combined with nonvolatile SONOS memory and nanowire channels structure (2007) (2)
- Formation of Germanium Nanocrystals Embedded in a Silicon-Oxygen-Nitride Layer (2007) (2)
- Improvement on thermal stability for indium gallium zinc oxide by oxygen vacancy passivation with supercritical fluid cosolvent oxidation (2021) (2)
- Heterogeneous Metal Oxide Channel Structure for Ultra-High Sensitivity Phototransistor with Modulated Operating Conditions (2022) (2)
- Analysis of Edge Effect Occurring in Non-Volatile Ferroelectric Transistors (2021) (2)
- IGFET Analysis Through Numerical Solution of Poisson's Equation (1968) (2)
- A Method for Fabricating a Superior Oxide'Nitride'Oxide Gate Stack (2004) (2)
- A Computational Efficient Method For Hbt Intermodulation Distortions And Two-Tone Characteristics Simulation (2001) (2)
- Enhancing Hot-Carrier Reliability of Dual-Gate Low-Temperature Polysilicon TFTs by Increasing Lightly Doped Drain Length (2020) (2)
- Nitric Acid Oxidized ZrO$_2$ as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory Devices (2011) (2)
- Adjusting oxygen vacancy and resistance switching of InWZnO thin films by high-pressure oxidation technique (2021) (2)
- InZnSnO-Based Electronic Devices for Flat Panel Display Applications (2014) (2)
- Evaluation of fine pattern definition with electron-beam direct writing lithography (2000) (2)
- The novel precleaning treatment for selective tungsten chemical vapor deposition (1999) (2)
- Improvement of Hafnium Oxide Resistive Memory Performance Through Low-Temperature Supercritical Oxidation Treatments (2021) (2)
- Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film (2021) (2)
- Highly reliable chemical–mechanical polishing process for organic low-k methylsilsesquioxane (2001) (2)
- Microwave oscillations in p-n-p and metal-n-p BARITT diodes (1971) (2)
- Radiation hardness of InWZnO thin film as resistive switching layer (2022) (2)
- Erratum to “Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications” [Thin Solid Films 447–448 (2004) 516–523] (2004) (2)
- Analysis of increase in forward transconductance to determine the critical point of polarization at ferroelectric 1T1C memory (2021) (2)
- On the Optimization of Performance and Reliability in a-InGaZnO Thin-Film Transistors by Versatile Light Shielding Design (2021) (2)
- Ion-implanted treatment of (Ba,Sr)TiO3 films for DRAM applications (2001) (2)
- SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION USING ETHYLDIMETHYLINDIUM AS IN-SOURCE (1994) (2)
- In-Memory Digital Comparator Based on a Single Multivalued One-Transistor-One-Resistor Memristor (2020) (2)
- Formation of Mo Silicide Nanodot Memory by Rapid Thermal Annealing Dual Electron-Gun Evaporated Mo–Si Layer (2008) (1)
- Publisher's Note: The Effect of Silicon Oxide Based RRAM with Tin Doping [Electrochem. Solid-State Lett., 15, H65 (2012)] (2012) (1)
- A Functional Novel Logic for Max/Min Computing in One-Transistor-One-Resistor Devices With Resistive Random Access Memory (RRAM) (2022) (1)
- Selective epitaxial growth of GaInP by LP-MOCVD using ethyldimethylindium, trimethylindium, trimethylgallium and triethylgallium as group III sources (1994) (1)
- A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memory (2020) (1)
- Communication—Potential of the π-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications (2019) (1)
- Forming-Free HfO2-Based Resistive Random Access Memory by X-Ray Irradiation (2022) (1)
- Ion-Implantation Treatment (Ba, Sr)TiO3 Thin Films (2000) (1)
- Method to improve chemical-mechanical-planarization polishing rate of low-k methyl-silsesquiazane for ultralarge scale integrated interconnect application (2004) (1)
- Resistive switching of SiOX with one diode-one resistor nanopillar architecture fabricated via nanosphere lithography (2014) (1)
- A Nonlinear Iterative Method for InAs/GaAs Semiconductor Quantum Dots Simulation (2001) (1)
- Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi2 Nanocrystals Nonvolatile Memory (2010) (1)
- A universal model for interface-type threshold switching phenomena by comprehensive study of Vanadium oxide-based selector (2017) (1)
- Quantum effect and functional high-speed devices: a perspective (Invited Paper) (1992) (1)
- Effect of Electrode Material On Resistive Switching Characteristics in TaON Nonvolatile Memory Devices (2013) (1)
- Physics of Semiconductor Devices, Fourth Edition (2018) (1)
- A Novel Parallel Approach for Numerical Solution of the Schrödinger and Poisson Equations in Semiconductor Devices (2001) (1)
- Parallel Dynamic Partition and Adaptive Computation in Semiconductor Device Simulation (2001) (1)
- High mobility tungsten-doped thin-film transistor on polyimide substrate with low temperature process (2018) (1)
- Performance enhancement of excimer laser crystallized poly-Si thin film transistors with fluorine implantation technology (2008) (1)
- Schottky barrier avalanche photodiodes (1968) (1)
- Theory of current transport in hot-electron transistors (1965) (1)
- Publisher’s Note: “Memory effect of oxide/SiC:O/oxide sandwiched structures” [Appl. Phys. Lett. 84, 2094 (2004)] (2004) (1)
- Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold (2019) (1)
- Effect of different constant compliance current for hopping conduction distance properties of the Sn:SiOx thin film RRAM devices (2016) (1)
- Investigation of Degradation Behavior During Illuminated Negative Bias Temperature Stress in P-Channel Low-Temperature Polycrystalline Silicon Thin-Film Transistors (2021) (1)
- High-level injection influence on the high frequency performance of polycrystalline silicon emitter bipolar transistors (1994) (1)
- Temperature Influence on the Generalized Einstein Relation for Degenerate Semiconductors with Arbitrary Band Structures (1994) (1)
- Studies on nonvolatile resistance memory switching behaviors in InGaZnO thin films (2011) (1)
- An Optimization of the Anti-punchthrough Implant for ESD Protection Circuit Design (2002) (1)
- Implementation of Functionally Complete Boolean Logic and 8-Bit Adder in CMOS Compatible 1T1R RRAMs for In-Memory Computing (2018) (1)
- A synaptic device built in one diode–one resistor (1D–1R) architecture with intrinsic SiOx-based resistive switching memory (2016) (1)
- Investigation of resistive switching properties in Sm2O3 memory devices (2011) (1)
- Effect of Ge Concentration on Static and Microwave Performances in GexSi1-x Heterojunction Bipolar Transistors under High-Level Injection (1994) (1)
- Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory (2017) (1)
- Resistive Random Access Memory: Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High‐k Spacer Structure (Adv. Electron. Mater. 9/2017) (2017) (1)
- Effectiveness of NH3 Plasma Treatment in Preventing Wet Stripper Damage to Low-K Hydrogen Silsesquioxane (HSQ) (2001) (1)
- Highly Reliable Low Temperature Ultrathin Oxides Grown Using N 2 O Plasma (2003) (1)
- The Effect of Humidity on Reducing Forming Voltage in Conductive-Bridge Random Access Memory With an Alloy Electrode (2019) (1)
- Characterization of NH3 plasma-treated Ba0.7Sr0.3TiO3 thin films (2000) (1)
- Appendix C Unit Prefixes (2006) (0)
- Switching Characteristics in Pt/TaON/TiN Films for Nonvolatile Memory Applications (2012) (0)
- Formation of CoSi2/CoSixNy Nanocrystals for Nonvolatile Memory Application (2012) (0)
- Retraction notice to “Improvement Mechanism of resistance random access memory with supercritical CO2 fluid treatment” [J. Supercrit. Fluids, Volume 85, January 2014, Pages 183–189] (2021) (0)
- 低介電常數材料（HSQ）之特性探討 (1999) (0)
- Leakage behavior of the quasi-superlattice stack for multilevel charge storage (2004) (0)
- One Hundred Years of Semiconductor-Device Developments (1874-1974) (1992) (0)
- Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1−xO2 and HfO2/Metal Gate Stacks (2013) (0)
- V-7 efficient microwave oscillation in a mutilayered BARITT diode structure (1975) (0)
- PART 2 - UNIPOLAR DEVICES (1991) (0)
- A Concept of Multilevel Charge Storage (2004) (0)
- Internet and Parallel Computing in Semiconductor Device Simulation (2000) (0)
- Degradation Mechanism Differences between Tin- and Tanelectrode Hzo-Based Ferams Analyzed by Current (2022) (0)
- Supplementary Information to “ Nonvolatile reconfigurable sequential logic in HfO 2 resistive random access memory array ” (2016) (0)
- Fabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH3 plasma passivation effects (2005) (0)
- The Investigation of Molybdenum Doping in Silicon Oxide Based Resistive Switching Memory (2012) (0)
- An Extended Method to Analyze Boron Diffusion Defects in 16 nm Node High-Voltage FinFETs (2023) (0)
- Effects of fluorine-implanted treatment on Ba0.7Sr0.3TiO3 films (2000) (0)
- PART 1 - BIPOLAR DEVICES (1991) (0)
- Effects of post-treatment for low-dielectric hydrogen silsesquioxane (HSQ) (1998) (0)
- Quantum-effect and functional high-speed devices: a perspective (Invited Paper) (1992) (0)
- Investigation of Threshold Voltage and Drain Current Degradations in Si3N4/AlGaN/GaN MIS-HEMTs Under X-Ray Irradiation (2023) (0)
- High Barrier Height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal (1999) (0)
- The floating-gate non-volatile semiconductor memory--from invention to the digital age. (2012) (0)
- Resistive switching characteristics of ytterbium oxide thin fi lm for nonvolatile memory application (2011) (0)
- Near ideal metal-semiconductor barriers (1968) (0)
- Impact of post deposition annealing on resistive switching in Ga2O3-based conductive-bridge RAM devices (2018) (0)
- A Novel Structural Design Serving as a Stress Relief Layer for Flexible LTPS TFTs (2019) (0)
- A Stacked p‐Type Low‐Temperature Polycrystalline Silicon Thin‐Film Transistor for Future Display Applications (2022) (0)
- A Novel Distributed Charge Storage Element Fabricated by the Oxidation of Amorphous Silicon Carbide (2004) (0)
- Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N2 and O2 ambient (2010) (0)
- STUDIES OF MICROPLASMAS AND HIGH-FIELD EFFECTS IN SILICON (1961) (0)
- Increasing Controllable Oxygen Ions to Improve Device Performance Using Supercritical Fluid Technique in ZnO-Based Resistive Random Access Memory (2022) (0)
- Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture (2018) (0)
- Selectiv e epitaxia l growt h of GaInP by low-pressur e metal-organic chemical-vapo r depositio n usin g ethyldimethylindiu m as In source (1996) (0)
- Study of Resistive Switching Behavior in ErO Thin Film for Resistive Random Access Memory ( RRAM ) (2010) (0)
- Comparative study on characteristics of GaN-based MIS-HEMTs with Al2O3 and Si3N4 gate insulators under Hot Carrier Degradation (2023) (0)
- Interfacial variation in HfO2-based resistive switching devices with titanium electrodes under asymmetric bias operation (2022) (0)
- Clarifying the switching layer transformation through analysis of an abnormal I–V curves with increasing set compliance current in oxide-based resistive random access memory (2021) (0)
- Improvement of Resistance Switching Behavior by Localizing Filament with Si Injection WOX Switching Layer (2013) (0)
- IVB-6 effects of grain boundaries on laser crystallized poly-Si MOSFETs (1981) (0)
- Shape and Size Effects on Electronic Structure for InAs/GaAs Quantum Rings (2002) (0)
- Use of a supercritical fluid treatment to improve switching region in resistive random access memory (2022) (0)
- A Method to Measure Polarization Signal of Nanoscale One-Transistor-One-Capacitor Ferroelectric Memory (2022) (0)
- AN INTEGRAL PHOTOELECTRIC METHOD FOR QUANTITATIVE SPECTRO-ANALYSIS (1956) (0)
- GSNERALIZED GUIDE FOR MCSFET MINIATURIZATION (1979) (0)
- PART 4 - PHOTONIC DEVICES (1991) (0)
- An Au-free GaN high electron mobility transistor with Ti/Al/W Ohmic metal structure (2015) (0)
- RATE OF ORDERING AT CONSTANT TEMPERATURE OF AuCu_3 (1956) (0)
- Subthreshold Conduction in MOSFET's (1978) (0)
- transistor manufacturing method A field effect short channel (1981) (0)
- Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory (2013) (0)
- Effect of Interfacial Oxide on Static and High-Frequency Performance in Poly-Emitter Bipolar Transistors Under High-Level Injection (1994) (0)
- Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors (2023) (0)
- Erratum [to "A revised boundary condition for the numerical analysis of Schottky barrier diodes"] (1986) (0)
- ON THE KINETICS OF ISOTHERMAL ORDERING PROCESS OF AuCu_3 (1956) (0)
- InAs Quantum-Well MOSFET Performance Improvement by Using PEALD AlN Passivation Layer and In-Situ NH 3 Post Remote-Plasma Treatment (2016) (0)
- THE PROCESS OF DECOMPOSITION OF MARTENSITE DURING THE FIRST STAGE OF TEMPERING (1958) (0)
- Compositional Nun-Uniformity of Selectively Grown GaxIn1-xP from High Resolution Double-Crystal X-Ray Measurement (1994) (0)
- Silicon Device Structures (2013) (0)
- Gate Length Scaling Effects in ESD Protection Ultra-thin Body SOI Devices (2004) (0)
- Investigations on the compositional non-uniformity of selectively grown GaxIn1−xP by LP-MOCVD using EDMI, TMI, TEG, and TMG as group III sources (1994) (0)
- In fl uence of forming process on resistance switching characteristics of In 2 O 3 / SiO 2 bilayer (2013) (0)
- ects of O 2 plasma treatment on the electric and dielectric characteristics of Ba 0 : 7 Sr 0 : 3 TiO 3 thin ® lms (2000) (0)
- Semiconductor device development in the 1970s and 1980s—A perspective (1980) (0)
- Effectiveness of NH_3 Plasma Treatment in Preventing Wet Stripper Damage to Low-K Hydrogen Silsesquioxane (HSQ) : Semiconductors (2001) (0)
- Possible Device Applications of Silicon Molecular Beam Epitaxy (2018) (0)
- PART 3 - SPECIAL MICROWAVE DIODES (1991) (0)
- Characterization of NH 3 plasma-treated Ba 0.7Sr 0.3TiO 3 thin films (2000) (0)
- Abnormal Threshold Voltage Shift and Sub-channel Generation in Top-Gate InGaZnO TFTs under Backlight Negative Bias Illumination Stress (2023) (0)
- Hopping conduction properties of the Sn:SiOX thin-film resistance random access memory devices induced by rapid temperature annealing procedure (2015) (0)
- Memory effect of oxide Õ SiC : O Õ oxide sandwiched structures (0)
- Improvement of Strained Negative Bias Temperature Instability in Flexible LTPS TFTs by a Stress-Release Design (2022) (0)
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