Siva Sivananthan
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Most Influential Person Now
Tamil American academic
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Physics
Siva Sivananthan's Degrees
- PhD Physics University of Illinois Chicago
- Masters Physics University of Illinois Chicago
- Bachelors Physics University of Illinois Chicago
Why Is Siva Sivananthan Influential?
(Suggest an Edit or Addition)According to Wikipedia, Professor Sivalingam Sivananthan is an American academic, scientist, businessman and Director of the Microphysics Laboratory at the University of Illinois at Chicago. Early life and family Sivananthan was born in Madduvil South near Chavakachcheri in northern Ceylon. His father was a Tamil scholar from Valvettithurai and his mother was teacher of religion and science. He was educated at Saraswathi Maha Vidyalayam, Drieberg College and Jaffna Hindu College . After school he joined the University of Peradeniya's Science Faculty in 1976, graduating in 1980 with a BS degree in physics.
Siva Sivananthan's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Optoelectronic properties of Cd1−xZnxTe films grown by molecular beam epitaxy on GaAs substrates (1985) (166)
- Direct observation of the core structures of threading dislocations in GaN (1998) (155)
- Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100) (1989) (105)
- Methods for magnetotransport characterization of IR detector materials (1993) (105)
- CdTe-GaAs(100) interface: MBE growth, rheed and XPS characterization (1986) (92)
- Single-crystal II-VI on Si single-junction and tandem solar cells (2010) (84)
- Relation between crystallographic orientation and the condensation coefficients of Hg, Cd, and Te during molecular-beam-epitaxial growth of Hg1−xCdxTe and CdTe (1986) (79)
- High quality large-area CdTe(211)B on Si(211) grown by molecular beam epitaxy (1997) (66)
- Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films (2000) (61)
- MBE P-on-n Hg1−xCdxTe heterostructure detectors on silicon substrates (1998) (61)
- Molecular beam epitaxial growth of a novel strained-layer superlattice system: CdTe-ZnTe (1986) (58)
- Structure of CdTe(111)B grown by MBE on misoriented Si(001) (1993) (58)
- Current status of direct growth of CdTe and HgCdTe on silicon by molecular‐beam epitaxy (1992) (56)
- Growth and characterization of pseudomorphic single crystal zinc blende MnS (1995) (56)
- Effects of Annealing in a Partially Reducing Atmosphere on Sputtered Al-Doped ZnO Thin Films (2009) (55)
- Microstructure of heteroepitaxial CdTe grown on misoriented Si(001) substrates (1995) (54)
- Photoluminescence studies of ZnTe‐CdTe strained‐layer superlattices (1986) (53)
- Investigation of the evolution of single domain (111)B CdTe films by molecular beam epitaxy on miscut (001)Si substrate (1998) (53)
- Obtaining Large Columnar CdTe Grains and Long Lifetime on Nanocrystalline CdSe, MgZnO, or CdS Layers (2018) (51)
- Suppression of twin formation in CdTe(111)B epilayers grown by molecular beam epitaxy on misoriented Si(001) (1995) (46)
- Polarity determination of CdTe(111) orientation grown on GaAs(100) by molecular beam epitaxy (1986) (46)
- The doping of mercury cadmium telluride grown by molecular‐beam epitaxy (1988) (45)
- Mode of arsenic incorporation in HgCdTe grown by MBE (1997) (43)
- Growth and characterization of CdTe/Si heterostructures: effect of substrate orientation (2000) (41)
- Defect characterization for epitaxial HgCdTe alloys by electron microscopy (2004) (40)
- Arsenic incorporation in HgCdTe grown by molecular beam epitaxy (1998) (40)
- Molecular beam epitaxial growth of high quality HgTe and Hg1−xCdxTe onto GaAs(001) substrates (1984) (39)
- MBE growth and characterization of in situ arsenic doped HgCdTe (1998) (38)
- Effect of SiC particles reinforcement on mechanical properties of aluminium 6061 alloy processed using stir casting route (2020) (38)
- Charge-carrier transport and recombination in heteroepitaxial CdTe (2014) (36)
- The effect of post-annealing on Indium Tin Oxide thin films by magnetron sputtering method (2014) (36)
- New development on the control of homoepitaxial and heteroepitaxial growth of CdTe and HgCdTe by MBE (1991) (35)
- Electrical properties of Li-doped Hg(1-x)Cd(x)Te(100) by molecular beam epitaxy (1987) (35)
- High-Efficiency Polycrystalline CdS/CdTe Solar Cells on Buffered Commercial TCO-Coated Glass (2012) (35)
- Heteroepitaxy of CdTe on GaAs and silicon substrates (1993) (35)
- Modeling the optical dielectric function of II‐VI compound CdTe (1995) (35)
- Influence of post-deposition annealing on the structural, optical and electrical properties of Li and Mg co-doped ZnO thin films deposited by sol-gel technique (2011) (34)
- Next-generation multijunction solar cells: The promise of II-VI materials (2011) (34)
- Wurtzite CdS on CdTe grown by molecular beam epitaxy (2000) (33)
- Molecular beam epitaxy and characterization of HgCdTe(111)B on Si(100) (1991) (32)
- Temperature dependence of the optical properties of CdTe (1997) (32)
- The effect of As passivation on the molecular beam epitaxial growth of high-quality single-domain CdTe(111)B on Si(111) substrates (1999) (32)
- MBE growth and device processing of MWIR HgCdTe on large area Si substrates (2001) (32)
- Understanding ion-milling damage in Hg1−xCdxTe epilayers (2006) (31)
- Ionization energy of acceptors in As-doped HgCdTe grown by molecular beam epitaxy (1998) (30)
- Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy (2008) (30)
- Carrier recombination lifetime characterization of molecular beam epitaxially grown HgCdTe (2008) (28)
- HgTe/CdTe superlattices grown by molecular beam epitaxy (1985) (28)
- Narrow gap HgCdTe absorption behavior near the band edge including nonparabolicity and the Urbach tail (2006) (28)
- Microstructural and optical characterization of CdTe(211)B/ZnTe/Si(211) grown by molecular beam epitaxy (1998) (28)
- Experimental Investigation on Tribological Behaviour of AA6066: HSS-Cu Hybrid Composite in Dry Sliding Condition (2022) (28)
- Mercury cadmium telluride/tellurium intergrowths in HgCdTe epilayers grown by molecular-beam epitaxy (2003) (28)
- Atomic-scale imaging of asymmetric Lomer dislocation cores at the Ge/Si(001) heterointerface (2004) (27)
- Molecular beam epitaxial growth and characterization of 2‐in.‐diam Hg1−xCdxTe films on GaAs (100) substrates (1988) (27)
- Growth of high quality CdTe on Si substrates by molecular beam epitaxy (1996) (27)
- Far-infrared detector based on HgTe/HgCdTe superlattices (2003) (26)
- Formation mechanism of crater defects on HgCdTe/CdZnTe (211) B epilayers grown by molecular beam epitaxy (2003) (26)
- Molecular beam epitaxial growth and characterization of Cd1−xZnxTe, Hg1−xCdxTe, Hg1−xMnxTe, and Hg1−xZnxTe on GaAs(100) (1986) (26)
- Carrier recombination in indium‐doped HgCdTe(211)B epitaxial layers grown by molecular beam epitaxy (1994) (26)
- Molecular beam epitaxy of alloys and superlattices involving mercury (1985) (25)
- Temperature-dependent photoemission study of the HgTe--CdTe valence-band discontinuity (1989) (25)
- Atomic scale study of polar Lomer–Cottrell and Hirth lock dislocation cores in CdTe (2014) (25)
- Performance and reproducibility enhancement of HgCdTe molecular beam epitaxy growth on CdZnTe substrates using interfacial HgTe∕CdTe superlattice layers (2005) (25)
- Molecular beam epitaxial growth of a novel strained layer type III superlattice system: HgTe-ZnTe (1986) (24)
- Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxy (2003) (24)
- Correlation of arsenic incorporation and its electrical activation in MBE HgCdTe (2000) (24)
- Electrical properties of in situ As doped Hg1−xCdxTe epilayers grown by molecular beam epitaxy (2001) (24)
- CdTe(111)B grown on Si(111) by molecular beam epitaxy (1999) (23)
- HgTe/HgCdTe superlattices grown on CdTe/Si by molecular beam epitaxy for infrared detection (2004) (23)
- Electrical properties of intrinsic p‐type shallow levels in HgCdTe grown by molecular‐beam epitaxy in the (111)B orientation (1989) (23)
- Variable area MWIR diodes on HgCdTe/Si grown by molecular beam epitaxy (2000) (23)
- New achievements in Hg1−xCdxTe grown by molecular‐beam epitaxy (1988) (22)
- Structure of CdTe/ZnTe superlattices (1987) (22)
- Proposed monolithic triple-junction solar cell structures with the potential for ultrahigh efficiencies using II-VI alloys and silicon substrates (2010) (22)
- Arsenic incorporation in MBE grown Hg1−xCdxTe (1999) (22)
- Development of high performance radiation hardened antireflection coatings for LWIR and multicolor IR focal plane arrays (2006) (21)
- Growth of Hg1−xZnxTe by molecular beam epitaxy on a GaAs(100) substrate (1985) (20)
- Correlation of CdZnTe(211)B substrate surface morphology and HgCdTe(211)B epilayer defects (2004) (20)
- Molecular beam epitaxial growth and characterization of HgCdTe, HgZnTe, and HgMnTe on GaAs(100) (1986) (20)
- Auger recombination dynamics of Hg0.795Cd0.205Te in the high excitation regime (1997) (20)
- Annealing experiments in heavily arsenic-doped (Hg,Cd)Te (1995) (20)
- Effects of annealing in N2 on sputtered Al-doped ZnO thin films (2009) (19)
- Atomic-resolution characterization of the effects of CdCl2 treatment on poly-crystalline CdTe thin films (2014) (19)
- (100) versus (111)B crystallographic orientation of Hg1−xCdxTe grown by molecular‐beam epitaxy (1987) (19)
- Evidence that arsenic is incorporated as As4 molecules in the molecular beam epitaxial growth of Hg1−xCdxTe:As (1999) (19)
- Incorporation and Activation of Arsenic Dopant in Single-Crystal CdTe Grown on Si by Molecular Beam Epitaxy (2014) (18)
- Type III - Type I transition and strain-effect in Hg1−xCdxTeCdTe and Hg1−xZnxTeCdTe superlattices (1988) (18)
- Realization of room temperature ferromagnetism in Zn1−xCrxO thin films grown by RF magnetron sputtering (2009) (17)
- The structure of the Si (211) surface (2006) (17)
- HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation (2001) (17)
- Atomic layer graphoepitaxy for single crystal heterostructures (1997) (17)
- Study of CdTe(111)B epilayers grown by molecular‐beam epitaxy (1989) (16)
- Material quality characterization of CdZnTe substrates for HgCdTe epitaxy (2006) (16)
- Influence of CdTe Deposition Temperature and Window Thickness on CdTe Grain Size and Lifetime After CdCl 2 Recrystallization (2018) (16)
- Selective epitaxy of cadmium telluride on silicon by MBE (2000) (16)
- Composition and thickness distribution of HgCdTe molecular beam epitaxy wafers by infrared microscope mapping (2005) (16)
- Finite temperature studies of Te adsorption on Si(0 0 1) (2002) (16)
- Preparation and evaluation of mechanical properties of 6061Al-Al2O3 metal matrix composites by stir casting process (2020) (16)
- In-Situ monitoring of temperature and alloy composition of Hg1−xCdxTe using FTIR spectroscopic techniques (1999) (16)
- Present status of molecular beam epitaxial growth and properties of HgTe–CdTe superlattices (1986) (16)
- Hg1−xMnxTe‐CdTe superlattices grown by molecular beam epitaxy (1987) (16)
- Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long wavelength infrared HgCdTe on Si (2006) (15)
- Stimulated emission from a CdTe/HgCdTe separate confinement heterostructure grown by molecular beam epitaxy (1990) (15)
- In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy (2015) (15)
- Minority carrier lifetime in indium-doped HgCdTe(211)B epitaxial layers grown by molecular beam epitaxy (1995) (15)
- Accuracy of the in situ determination of the CdZnTe temperature by ellipsometry before the growth of HgCdTe by MBE (2003) (15)
- Metalorganic Chemical Vapor Deposition of CdTe(133) Epilayers on Si(211) Substrates (2010) (14)
- Hot electron relaxation dynamics in ZnSe (1997) (13)
- Current status of the growth of HgCdTe by molecular beam epitaxy on (211)B CdZnTe substrates (1992) (13)
- Absorption of Narrow-Gap HgCdTe Near the Band Edge Including Nonparabolicity and the Urbach Tail (2007) (13)
- Growth of PbSe on ZnTe/GaAs(2 1 1)B by molecular beam epitaxy (2010) (13)
- A model for dark current and multiplication in HgCdTe avalanche photodiodes (2000) (13)
- Arsenic deposition as a precursor layer on silicon (211) and (311) surfaces (2005) (13)
- Molecular beam epitaxy growth of HgCdTe for high performance infrared photon detectors (2007) (13)
- Heteroepitaxial CdTe(111) grown by MBE on nominally flat and misoriented Si(001) substrates : characterization by electron microscopy and optical methods (1996) (12)
- Stimulated emission from a Hg1−xCdxTe epilayer and CdTe/Hg1−xCdxTe heterostructures grown by molecular beam epitaxy (1990) (12)
- MnS/ZnSe on GaAs grown by molecular beam epitaxy (1996) (12)
- NEW CDTE PHOTOCONDUCTOR ARRAY DETECTOR FOR X-RAY APPLICATIONS (1995) (12)
- Microstructure of Heteroepitaxial ZnTe Grown by Molecular Beam Epitaxy on Si(211) Substrates (2011) (12)
- The Effect of Wet Etching on Surface Properties of HgCdTe (2009) (12)
- Shockley-Read-Hall lifetimes in CdTe (2014) (12)
- Characteristics of MBE-grown heterostructure HgCdTe/CdTe/Si materials and planar photovoltaic devices (1999) (12)
- Valence band offset at the CdS/CdTe interface (2002) (12)
- Electronic structure of Te- and As-covered Si(211) (2003) (12)
- Growth of Te on As-exposed Si(211): Electronic structure calculations (2005) (12)
- Recent progress in the doping of MBE HgCdTe (1995) (11)
- Molecular beam epitaxial growth and structural properties of HgCdTe layers on CdTe(211)B/Si(211) substrates (2000) (11)
- Investigations on the structural and optical properties of band gap engineered Zn1−x(Cd, Mg)xO thin films deposited by sol–gel technique (2015) (10)
- SIMS and XPS characterization of CdS/CdTe heterostructures grown by MBE (2000) (10)
- Arsenic p-Doping of HgCdTe Grown by Molecular Beam Epitaxy (MBE): A Solved Problem? (2013) (10)
- Growth of Fe/Ge(001) heterostructures by molecular beam epitaxy: Interface structure, electronic and magnetic properties (2002) (10)
- Dependence of the condensation coefficient of Hg on the orientation and the stability of the Hg–Te bond for the growth of Hg1−xMxTe (M=Cd, Mn, Zn) (1987) (10)
- STM study of the Te/Si(100) interface (1999) (10)
- Improvement of the accuracy of the In-situ ellipsometric measurements of temperature and alloy composition for MBE grown HgCdTe LWIR/MWIR structures (2001) (10)
- Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long-wavelength infrared HgCdTe on Si (2006) (10)
- Deep level photoluminescence spectroscopy of CdTe epitaxial layer surfaces (1990) (10)
- Characteristics of p‐n junctions fabricated on Hg1−xCdxTe epilayers grown by molecular beam epitaxy (1988) (10)
- Heteroepitaxy of CdTe on Si substrates in view of infrared and x-ray detection (1996) (10)
- Analysis of low doping limitation in molecular beam epitaxially grown HgCdTe(211)B epitaxial layers (1995) (10)
- Electrical characteristics of As-doped p-type HgCdTe epilayers grown on CdZnTe(211)B substrates by molecular beam epitaxy (1999) (9)
- Cadmium telluride growth on patterned substrates for mercury cadmium telluride infrared detectors (2005) (9)
- Transient picosecond/subpicosecond Raman scattering studies of nonequilibrium electron distributions and phonons in CdTe (1996) (9)
- MBE HgCdTe for HDVIP Devices: Horizontal Integration in the US HgCdTe FPA Industry (2012) (8)
- Microstructure of interfacial HgTe/CdTe superlattice layers for growth of HgCdTe on CdZnTe (2 1 1)B substrates (2007) (8)
- Microstructural Characterization of HgTe/HgCdTe Superlattices (2004) (8)
- Selective growth of CdTe on patterned CdTe∕Si(211) (2008) (8)
- Growth and characterization of heteroepitaxial CdTe and ZnTe on Ge(001) buffer layers (1996) (8)
- HgCdTe Photoconductive Mixers for 2-8 THz (2001) (8)
- Surfactant-mediated growth of Ge/Si(0 0 1) studied by Raman spectroscopy and TEM (1999) (8)
- MWIR detectors on HgCdTe grown by MBE on 3-in. diameter silicon substrates (2004) (8)
- Electrical Characteristics of PEDOT:PSS Organic Contacts to HgCdTe (2007) (8)
- Effect of interface grading on the optical performance of distributed Bragg reflector multilayers in Fabry-Pérot optical filters (2020) (8)
- P-Type doping with arsenic in (211)B HgCdTe grown by MBE (1996) (7)
- Al- and Al:In-Doped ZnO Thin Films Deposited by RF Magnetron Sputtering for Spacecraft Charge Mitigation (2008) (7)
- In-situ ellipsometry studies of adsorption of Hg on CdTe(211)B/Si(211) and molecular beam epitaxy growth of HgCdTe(211)B (2004) (7)
- Doping of (211) B mercury cadmium telluride (1996) (7)
- Nonequilibrium Operation of Arsenic Diffused Long-Wavelength Infrared HgCdTe Photodiodes (2008) (7)
- In-situ control of temperature and alloy composition of Cd1−xZnxTe grown by molecular beam epitaxy (2000) (7)
- p-Type doping with arsenic in (2 1 1)B HgCdTe grown by MBE (1997) (7)
- Si 2p core-level shifts at the CdTe/Si(100) interface (1998) (7)
- Temperature dependence of the optical properties of Hg1−xCdxTe (1997) (7)
- Molecular-Beam Epitaxial Growth of HgCdTe (2010) (6)
- Estimation of the mechanical stiffness constant of MEMS-based parallel-plate micro-actuators (2020) (6)
- Analysis of the variation in the composition as a function of growth parameters in the MBE growth of indium doped Hg1−xCdxTe (1998) (6)
- Electrical activation and electrical properties of arsenic-doped Hg 1-xCdxTe epilayers grown by MBE (2001) (6)
- Heteroepitaxy of PbSe on GaAs(1 0 0) and GaAs(2 1 1)B by molecular beam epitaxy (2009) (6)
- Passivation effect on optical and electrical properties of molecular beam epitaxy-grown HgCdTe/CdTe/Si layers (2006) (5)
- Mercury Cadmium Telluride for High Operating Temperature Infrared Detectors (2004) (5)
- Study of the CdTe/As/Si(111) interface by scanning tunneling microscopy and X-ray photoelectron spectroscopy (2000) (5)
- Diffusion of gold and native defects in mercury cadmium telluride (2005) (5)
- High-temperature HgCdTe/CdTe/Si infrared photon detectors by MBE (2001) (5)
- Temperature-dependent adsorption of Hg on CdTe(211)B studied by spectroscopic ellipsometry (2003) (5)
- The effect of surface roughness of substrates on the performance of polycrystalline cadmium sulfide/cadmium telluride solar cells (2015) (5)
- Te-rich liquid phase epitaxial growth of HgCdTe on Si-based substrates (1995) (5)
- Strain Reduction in Selectively Grown CdTe by MBE on Nanopatterned Silicon on Insulator (SOI) Substrates (2008) (5)
- II-VI Material Integration With Silicon for Detector and PV Applications (2016) (5)
- Shubnikov-de Haas oscillations on as-grown and annealed molecular-beam-epitaxy-grown Hg1-xCdxTe alloys doped with indium (1993) (5)
- Nitrogen Plasma Doping of Single-Crystal ZnTe and CdZnTe on Si by MBE (2013) (4)
- Synchrotron X-Ray photoconductor detector arrays made on MBE grown CdTe (1996) (4)
- Development of CdTe on Si Heteroepilayers for Controlled PV Material and Device Studies (2013) (4)
- Microstructure of Heteroepitaxial ZnTe Grown on GaAs(211)B by Molecular Beam Epitaxy (2009) (4)
- X‐ray photoemission study of Hg clusters on Hg1−xCdxTe surfaces (1988) (4)
- Effect of Atmosphere on n-Type Hg1–xCdxTe Surface after Different Wet Etching Treatments: An Electrical and Structural Study (2008) (4)
- Multijunction single-crystal CdTe-based solar cells: opportunities and challenges (2010) (4)
- MBE grown CdTe photoconductor array detector for x‐ray measurements (1995) (4)
- Optical characterization of ZnMnSSe quaternary alloys for visible light emitting devices (1996) (4)
- Direct growth of single-domain and twin-free CdTe(111)B on vicinal Si(001) by molecular beam epitaxy (1994) (4)
- Effects of Inductively Coupled Plasma Hydrogen on Long-Wavelength Infrared HgCdTe Photodiodes (2013) (4)
- Ultrafast molecular beam epitaxy (MBE) CdTe photoconductor array for synchrotron radiation (1994) (4)
- Stimulated emission from a Hg 1 - x Cd x Te epilayer and CdTe/Hg 1 - x Cd x Te heterostructures grown by molecular beam epitaxy (1990) (4)
- Hall electron density and mobility in HgCdTe alloys with anomalous behavior of the Hall coefficient in weak magnetic field (1993) (4)
- Hot carrier relaxation dynamics in zinc selenide (1997) (4)
- Evolution of self-assembled Ge/Si(211) islands (2001) (4)
- Preparation and Characterization of Aluminium Nanocomposites Based on MWCNT (2014) (3)
- Characterization of PbSnSe/CdTe/Si (211) Epilayers Grown by Molecular Beam Epitaxy (2008) (3)
- Surfactant-mediated growth and characterization of Ge(211)/Si(211) heterostructures grown by molecular beam epitaxy (2001) (3)
- Ellipsometric study of the nucleation of (2 1 1) HgCdTe on CdZnTe(2 1 1)B (2003) (3)
- Variable-Field Hall Measurement and Transport in LW Single-Layer n-Type MBE Hg1−xCdxTe (2013) (3)
- Extrinsic p-type doping and analysis of HgCdTe grown by molecular beam epitaxy (2002) (3)
- Atomistic simulations of grain boundaries in CdTe (2015) (3)
- Reflectivity difference spectroscopy study of thin film ZnSe grown on GaAs by molecular beam epitaxy (1997) (3)
- ZnSe/ZnSxSe1−x heterojunction valence band discontinuity measured by x-ray photoelectron spectroscopy (1998) (3)
- Optimizing the Characteristics of the Laser Hardfacing Process Parameters to Maximize the Wear Resistance of Ni-Based Hard-Faced Deposits Using the RSM Technique (2021) (3)
- Arsenic doped heteroepitaxial CdTe by MBE for applications in thin-film photovoltaics (2014) (2)
- Optical investigation of strain and defects in (100) CdTe/Ge/Si and ZnTe/Ge/Si grown by molecular beam epitaxy (1997) (2)
- Infrared optical characterization of the narrow gap semiconductor HgCdTe (2004) (2)
- Molecular Beam Epitaxy of HgCdTe Materials and Detectors (2011) (2)
- Influence of Hydrogenation on Electrical Conduction in HgCdTe Thin Films on Silicon (2014) (2)
- Gold diffusion in mercury cadmium telluride grown by molecular beam epitaxy (2003) (2)
- Electrochemical and electro-optical study of the strained-layer superlattice system: CdTe-ZnTe (1988) (2)
- An analysis of gamma radiation effects on ZnS- and CdTe-passivated HgCdTe photodiodes (2006) (2)
- Design and development of multicolor detector arrays (2004) (2)
- Extended spectrum SWIR camera with user-accessible Dewar (2017) (2)
- Molecular beam epitaxy growth of PbSe on Si (211) using a ZnTe buffer layer (2011) (2)
- On the optical dispersive properties of HgCdTe as a function of depth (2009) (2)
- INVESTIGATION OF MECHANICAL PROPERTIES FOR Al-SiC-TiB2 METAL MATRIX COMPOSITE (2018) (2)
- Proton irradiation of MWIR HgCdTe/CdZnTe (2015) (2)
- Uncooled nonequilibrium HgCdTe IR detector modeling (2000) (2)
- Adhesive wafer bonding of micro-actuators with SU-8 photoresist (2020) (2)
- Summary Abstract: Type III–type I transition in Hg1−xCdxTe–CdTe, Hg1−xMnxTe–CdTe, and Hg1−xZnxTe–CdTe superlattices (1987) (2)
- Hot phonon effects in ZnSe (1998) (2)
- Progress in far-infrared detection technology (2002) (2)
- Creation and analysis of atomic structures for CdTe bi-crystal interfaces by the grain boundary genie (2015) (2)
- HgCdTe(211)B Grown on CdTe(211)B/ZnTe(211)B/Si(211) by MBE (1996) (1)
- Reduced leakage currents of CdZnTe radiation detectors with HgTe/HgCdTe superlattice contacts (2012) (1)
- Mercury cadmium telluride : A superior choice for near room temperature infrared detectors (Review Paper) (2001) (1)
- Improved model of HgCdTe's pseudo dielectric function for in-situ ellipsometry data analysis during MBE growth (2002) (1)
- In situ monitoring of molecular-beam-epitaxy grown Hg1−xCdxTe by Fourier transform infrared spectroscopy (2001) (1)
- Initial Growth and Interface Structure of CdTe Thin Films Grown by MBE on 4° Miscut Si Substrates (1996) (1)
- Reflectivity Difference Spectra of GaAs and ZnSe (100) Surfaces (1995) (1)
- P-Type Doping with Arsenic in MBE-HgCdTe Using Planar Doping Approach (1996) (1)
- Synthesis of CdSeCdSexTe1-x/CdTe for graded solar cells (2019) (1)
- Electrochemical and Electrooptical Study of the Strained‐Layer Superlattice System: CdTe‐ZnTe. (1988) (1)
- Infrared Applications of Semiconductors II: Symposium Held in Boston, Massachusetts on December 1-4, 1997 (1997) (1)
- Low-temperature performance of an MBE-grown CdTe x-ray photoconductor detector (1995) (1)
- Molecular beam epitaxial growth of ZnSe on GaAs substrates (1997) (1)
- Atomic scale analysis of defect structures and properties in III-nitride materials by Z-contrast imaging and EELS in STEM (1999) (1)
- Molecular beam epitaxial growth of ZnSe on GaAs substrates: influence of precursors on interface quality (1997) (1)
- Infrared applications of semiconductors 2. Materials Research Society symposium proceedings Volume 484 (1998) (1)
- Materials for infrared detectors III : 7-8 August 2003, San Diego, California, USA (2003) (1)
- Thin absorbers for large-area soft X-ray microcalorimeters (2006) (1)
- Investigating the Effect of As and Te Passivation on the MBE Growth of Cdte (111) On Si (111) Substrates (1999) (1)
- Characteristics of HgCdTe layers grown by MOVPE on (211)B CdTe/Si substrates (2002) (1)
- CdZnTe Radiation Detectors with HgTe/HgCdTe Superlattice Contacts for Leakage Current Reduction (2011) (1)
- New achievements in Hg(1-x)Cd(x)Te grown by molecular-beam epitaxy (1988) (1)
- Observation of prevalence of quasi-equilibrium in the MBE growth of Hg1−xCdxTe (1998) (1)
- Comparative Study of HgCdTe Etchants: An Electrical Characterization (2007) (1)
- Au interfaces with epitaxially grown CdTe(111): Chemistry and barrier heights (1991) (1)
- Performance of MBE grown CdTe photoconductor arrays for hard X-ray detection (1995) (1)
- Selective-Area Epitaxy of CdTe on CdTe/ZnTe/Si(211) Through a Nanopatterned Silicon Nitride Mask (2012) (1)
- Infrared detector materials and devices : 4-5 August 2004, Denver, Colorado, USA (2004) (0)
- HgCdTe/Te Intergrowths and Precipitates in HgCdTe alloys grown by Molecular Beam Epitaxy (2003) (0)
- Materials for infrared detectors II : 8-9 July 2002 ,Seattle, Washington, USA (2002) (0)
- List of papers submitted or published that acknowledge ARO support during this reporting period. List the papers, including journal references, in the following categories: (2006) (0)
- Choice for NeartRoom Temperature Infrared Detectors (2001) (0)
- Quantum-Dot Biosensors using Fluorescence Resonance Energy Transfer (FRET) (2013) (0)
- Hardness measurements on Pure and ZnS added NaClx Br1-x single crystals grown from aqueous solutions (2012) (0)
- A study on solution grown CdZnS as a window layer for solar applications (2013) (0)
- Stacking faults and lamellar twins with intrinsic point defects in poly-crystalline CdTe analyzed by density functional theory (2014) (0)
- Interfaces and Defects in Opto-Electronic Semiconductor Films Studied by Atomic Resolution STEM (1997) (0)
- Growth and Characterization of CdTe on Silicon Substrates (1997) (0)
- A Computational Investigation of Random Angle Grain Boundaries for CdTe Solar Cells (2015) (0)
- Experimental and theoretical investigation of the Te/Si(100)-(2x1) surface: a precursor to the growth of a CdTe on Si(100) (2001) (0)
- Heteroepitaxy of CdTe on GaAs and Si substrates (1993) (0)
- Fabrication and characteristics of nonequilibrium VLWIR detectors with HgTe/CdTe superlattice active regions (2003) (0)
- Direct observations of atomic structures of defects in GaN by high-resolution Z-contrast STEM (1997) (0)
- A new MBE CdTe photoconductor array detector for X-ray applications (1994) (0)
- Hydrostatic pressure dependence of intersubband transitions of HgTe/Hg1-xCdxTe superlattices and FIR detector applications (2008) (0)
- Optimization of the MBE growth of Hg1-xCdxTe for advanced infrared applications (1998) (0)
- Heterostructure II-VI materials and devices for infrared imaging (1998) (0)
- Improvement of HgCdTe Qualities grown by MOVPE using MBE grown CdTe/Si as Substrate (2003) (0)
- Direct observation of threading dislocations in GaN by high-resolution Z-contrast imaging (1998) (0)
- X-ray photoemission study of Hg clusters on Hg(1-x)Cd(x)Te surfaces (1988) (0)
- Assessing Sb Cross Incorporation in InAs/InAsSb Superlattices (2022) (0)
- Determination of the interface structure of CdTe(111) on Si(100) using Z-contrast imaging and EELS (1996) (0)
- HgCdTe for far-infrared heterodyne detection (2003) (0)
- Effect of annealing on arsenic activation and device performance in mid-infrared HgCdTe on silicon grown by MBE (2000) (0)
- Experimental study on the properties of mercury-cadmium-telluride grown by molecular beam epitaxy. (1988) (0)
- Studies on pure and zns added mixed single crystals of naclxbr 1 x grown from aqueous solutions (2013) (0)
- SWIR HgCdTe photodiodes for LADAR applications (2016) (0)
- A comparison of performance between chemical bath deposited and electrochemical bath deposited CdS thin films in CdS/CdTe thin film solar cells (2013) (0)
- Investigation on mechanical properties of Al6061 alloy – Multiwall carbon nanotubes reinforced composites by powder metallurgy route (2020) (0)
- Use of electro-deposition technique for growing n-type and p-type CdS and CdTe thin film semiconductor materials for fabrication of solar cells with improved performances (2013) (0)
- Effects of stoichiometry in undoped CdTe heteroepilayers on Si (2015) (0)
- The Investigation Of Type III-Type I Strained-Layer Superlattice System: Hg1-xZnxTe-CdTe (1988) (0)
- Orientation Dependence of CdTe/Si Grown by MBE (1995) (0)
- Structural evolution due to Zn and Te adsorption on As-exposed Si(211): density functional calculation (2009) (0)
- First principles modeling of grain boundaries in CdTe (2016) (0)
- Growth of HgCdTe/CdTe/Si by Molecular Beam Epitaxy (2004) (0)
- Growth and Characterization of Ge/Si (112) Islands (2001) (0)
- Growth of Tellurium on As-exposed Si(211) (2005) (0)
- Deep Level Luminescence Measurements of MBE CdTe Growth Quality and Processing (1989) (0)
- HgCdTe Arrays for the Far-Infrared (2001) (0)
- Molecular beam epitaxial growth of ZnSe, ZnSSe and ZnMnSSe layers on GaAs substrates for blue-green laser structures (1995) (0)
- The Shallow Doping Properties of Mercury Cadmium Telluride as Grown by Molecular Beam Epitaxy (1991) (0)
- Applications of the Infrared Measurement Analyzer: Hydrogenated LWIR HgCdTe Detectors (2013) (0)
- Suppression of free carrier absorption in the mid wavelength infrared Fabry–Pérot optical filters (2020) (0)
- MBE growth and characterization of epitaxial MnS and ZnSe heterostructures on GaAs (1993) (0)
- Investigation of Artificial Forced Cooling in the Bridgman Crystal Growth of Cadmium Zinc Telluride (2007) (0)
- Determination of the Electronic Structures of Screw and Edge Dislocations in Gan Using Atomic Resolution EELS (2000) (0)
- Atomic-resolution EELS for composition and 3-D coordination determination at interfaces and defects (1996) (0)
- Direct Observation of Threading Dislocations in Gan by High Resolution z-contrast imaging (1998) (0)
- In-situ ellipsometric characterization of nucleation conditions of HgCdTe grown by MBE (2002) (0)
- MBE growth of HgCdTe HOT detector heterostructures (2002) (0)
- Microstructural and High Temperature Wear Characteristics of Plasma Transferred Arc Hardfaced Ni–Cr–Si–B-C Alloy Deposits (2021) (0)
- Journal of Elecronic Materials (2008) (0)
- AFRL-ML-WP-TP-2007-517 ABSORPTION OF NARROW GAP HgCdTe NEAR THE BAND EDGE INCLUDING NONPARABOLICITY AND THE URBACH TAIL ( PREPRINT ) (2007) (0)
- Defect reduction in HgCdTe layers by MBE growth on CdTe mesas (2005) (0)
- A semiconductor saturable absorber for mid-infrared wavelengths (2013) (0)
- Reduction of leakage currents in CdZnTe-based x-ray and γ-ray detectors: a II-VI semiconductor superlattice approach (2010) (0)
- Interface structure and Zn diffusion in the Cd Te/Zn Te/Si system grown by MBE (1999) (0)
- Molecular beam epitaxial growth of CdTe and related II-VI materials on Si for the fabrication of infrared detectors and solar cells (2010) (0)
- High operation temperature of HgCdTe photodiodes by bulk defect passivation (2013) (0)
- Mechanical Behavior and Microstructure Evolution of Al-5%Cu/TiC Metal Matrix Composite (2020) (0)
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