Soo Jin Prof. Chua
#144,652
Most Influential Person Now
Soo Jin Prof. Chua's AcademicInfluence.com Rankings
Download Badge
Physics
Soo Jin Prof. Chua's Degrees
- PhD Physics Stanford University
- Masters Physics Stanford University
Why Is Soo Jin Prof. Chua Influential?
(Suggest an Edit or Addition)Soo Jin Prof. Chua's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Blueshift of optical band gap in ZnO thin films grown by metal-organic chemical-vapor deposition (2005) (668)
- A mechanical assessment of flexible optoelectronic devices (2001) (312)
- Micro-Raman investigation of strain in GaN and AlxGa1−xN/GaN heterostructures grown on Si(111) (2002) (245)
- Photoluminescent properties of copper-doped zinc oxide nanowires (2004) (230)
- Spectral and Thermal Spectral Stability Study for Fluorene-Based Conjugated Polymers (2002) (206)
- Luminescence characteristics of impurities-activated ZnS nanocrystals prepared in microemulsion with hydrothermal treatment (1998) (196)
- Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots (1998) (192)
- Characteristics of InGaAs quantum dot infrared photodetectors (1998) (161)
- Conjugated polymer-based electrochromics: materials, device fabrication and application prospects (2016) (143)
- Piezotronic Effect on the Transport Properties of GaN Nanobelts for Active Flexible Electronics (2012) (109)
- Femtosecond pulse laser ablation of sapphire in ambient air (2004) (109)
- Vapor-phase growth and characterization of Mo(1-x)W(x)S2 (0 ≤ x ≤ 1) atomic layers on 2-inch sapphire substrates. (2014) (106)
- Assignment of deep levels causing yellow luminescence in GaN (2004) (99)
- Nature and elimination of yellow-band luminescence and donor–acceptor emission of undoped GaN (1999) (95)
- Enhanced Photoluminescence and Characterization of Mn-Doped ZnS Nanocrystallites Synthesized in Microemulsion (1997) (91)
- The effect of post-annealing treatment on photoluminescence of ZnO nanorods prepared by hydrothermal synthesis (2006) (89)
- The effect of post-annealing treatment on photoluminescence of ZnO nanorods prepared by hydrothermal synthesis (2006) (89)
- Degradation and failure of organic light-emitting devices (2002) (88)
- Properties of polycrystalline ZnO thin films by metal organic chemical vapor deposition (2005) (88)
- Lasing in GaN microdisks pivoted on Si (2006) (86)
- OBSERVATION OF OPTICALLY-ACTIVE METASTABLE DEFECTS IN UNDOPED GAN EPILAYERS (1998) (80)
- Investigation of optical properties of nanoporous GaN films (2005) (80)
- Exciton radiative lifetime in ZnO nanorods fabricated by vapor phase transport method (2007) (77)
- Photoluminescence and electroluminescence from copper doped zinc sulphide nanocrystals/polymer composite (1998) (76)
- Lithium-fluoride-modified indium tin oxide anode for enhanced carrier injection in phenyl-substituted polymer electroluminescent devices (2001) (75)
- Systematic studies of the epitaxial growth of single-crystal ZnO nanorods on GaN using hydrothermal synthesis (2006) (74)
- Effects of size and shape on electronic states of quantum dots (2006) (74)
- Plasma-induced damage to n-type GaN (2000) (73)
- Polyfluorene-Based Light-Emitting Rod-Coil Block Copolymers (2005) (71)
- Degradation of organic light-emitting devices due to formation and growth of dark spots (2001) (71)
- Direct Spectroscopic Evidence for a Photodoping Mechanism in Polythiophene and Poly(bithiophene‐alt‐thienothiophene) Organic Semiconductor Thin Films Involving Oxygen and Sorbed Moisture (2009) (71)
- Depth profiling of GaN by cathodoluminescence microanalysis (1999) (70)
- Fabrication and properties of nanoporous GaN films (2004) (66)
- Correlation between dark spot growth and pinhole size in organic light-emitting diodes (2001) (64)
- Identification of deep levels in GaN associated with dislocations (2004) (61)
- Growth of single crystal ZnO nanorods on GaN using an aqueous solution method (2005) (60)
- Stable p-Type Doping of ZnO Film in Aqueous Solution at Low Temperatures (2010) (60)
- Luminescence studies of CdS spherical particles via hydrothermal synthesis (2000) (60)
- Photoluminescence studies of SiC nanocrystals embedded in a SiO2 matrix (2001) (59)
- F-enhanced morphological and thermal stability of NiSi films on BF2+-implanted Si(001) (2002) (59)
- Synthesis of Conjugated−Ionic Block Copolymers by Controlled Radical Polymerization (2003) (59)
- Modulating high-energy visible light absorption to attain neutral-state black electrochromic polymers (2016) (59)
- Correlating the enhancement of UV luminescence from solution-grown ZnO nanorods with hydrogen doping (2012) (59)
- Modulating high-energy visible light absorption to attain neutral-state black electrochromic polymers (2016) (59)
- Extremely high extinction ratio terahertz broadband polarizer using bilayer subwavelength metal wire-grid structure (2012) (58)
- Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template (2007) (57)
- High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching (2005) (56)
- Cluster coarsening in zinc oxide thin films by postgrowth annealing (2006) (55)
- Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template (2005) (55)
- Photoluminescence studies on InGaN/GaN multiple quantum wells with different degree of localization (2002) (53)
- Green luminescence from Cu-doped ZnO nanorods: Role of Zn vacancies and negative thermal quenching (2013) (52)
- High optical quality GaN nanopillar arrays (2005) (52)
- Optical properties of InAs∕GaAs surface quantum dots (2005) (52)
- Nanoscale lateral epitaxial overgrowth of GaN on Si (111) (2005) (51)
- Effects of AlAs interfacial layer on material and optical properties of GaAs∕Ge(100) epitaxy (2008) (51)
- Luminescence properties of ZnO layers grown on Si-on-insulator substrates (2006) (50)
- Nano-antenna in a photoconductive photomixer for highly efficient continuous wave terahertz emission (2013) (50)
- Influence of stress on structural properties of AlGaN/GaN high electron mobility transistor layers grown on 150 mm diameter Si (111) substrate (2013) (49)
- Effects of periodic delta-doping on the properties of GaN:Si films grown on Si (111) substrates (2004) (49)
- Raman scattering properties of GaN thin films grown on sapphire under visible and ultraviolet excitation (2001) (49)
- Towards large area and continuous MoS2 atomic layers via vapor-phase growth: thermal vapor sulfurization (2014) (47)
- High-frequency capacitance–voltage measurement of plasma-enhanced chemical-vapor-deposition-grown SiO2/n-GaN metal-insulator-semiconductor structures (2001) (47)
- Linearly polarized light emission from InGaN light emitting diode with subwavelength metallic nanograting (2009) (46)
- Universal photoluminescence evolution of solution-grown ZnO nanorods with annealing: important role of hydrogen donor (2011) (45)
- High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor (2017) (45)
- Synthesis of Conjugated-Acidic Block Copolymers by Atom Transfer Radical Polymerization (2002) (45)
- Femtosecond pulsed laser-induced periodic surface structures on GaN/sapphire (2005) (43)
- Group-V intermixing in InAs∕InP quantum dots (2005) (43)
- Outgoing multiphonon resonant Raman scattering and luminescence in Be- and C-implanted GaN (2002) (42)
- Synthesis and phase evolutions in layered structure of Ga2S3 semiconductor thin films on epiready GaAs (111) substrates. (2014) (42)
- Effects of fluorination on the electrochromic performance of benzothiadiazole-based donor–acceptor copolymers (2015) (42)
- Effects of substrate on the structure and orientation of ZnO thin film grown by rf-magnetron sputtering (2007) (41)
- Cool white III-nitride light emitting diodes based on phosphor-free indium-rich InGaN nanostructures (2008) (41)
- Prediction of Semiconductor Material Properties by the Properties of Their Constituent Chemical Elements (2000) (41)
- Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing (1999) (40)
- Characterization of inductively coupled plasma etched surface of GaN using Cl2/BCl3 chemistry (2001) (40)
- Structural analysis of metalorganic chemical vapor deposited AIN nucleation layers on Si (1 1 1) (2004) (39)
- Zinc oxide nanowires and nanorods fabricated by vapour-phase transport at low temperature (2004) (39)
- Enhanced performance of GaN nanobelt-based photodetectors by means of piezotronic effects (2013) (39)
- Photoluminescence and micro-Raman scattering in Mn-doped ZnS nanocrystalline semiconductors (2003) (38)
- Growth and optical properties of type-II InP/GaAs self-organized quantum dots (2001) (38)
- High-density arrays of InGaN nanorings, nanodots, and nanoarrows fabricated by a template-assisted approach. (2006) (38)
- Synthesis and optical properties of well aligned ZnO nanorods on GaN by hydrothermal synthesis (2006) (37)
- Micro-Raman spectroscopic investigation of NiSi films formed on BF2+-, B+- and non-implanted (100)Si substrates (2004) (37)
- Zinc oxide quantum dots embedded films by metal organic chemical vapor deposition (2006) (36)
- ZnO coaxial nanorod Homojunction UV light-emitting diodes prepared by aqueous solution method. (2012) (36)
- Formation of nanoimprinting mould through use of nanosphere lithography (2006) (35)
- Carrier concentration and mobility in GaN epilayers on sapphire substrate studied by infrared reflection spectroscopy (1999) (35)
- Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth (2007) (35)
- Surface analysis of GaN decomposition (2002) (34)
- Interplay of processing, morphological order, and charge-carrier mobility in polythiophene thin films deposited by different methods: comparison of spin-cast, drop-cast, and inkjet-printed films. (2010) (34)
- Strain relaxation in graded InGaN'GaN epilayers grown on sapphire (2003) (34)
- Controlled group V intermixing in InGaAsP quantum well structures and its application to the fabrication of two section tunable lasers (2002) (33)
- Structural and optical properties of ZnO nanorods grown by metal organic chemical vapor deposition (2008) (33)
- Raman and photoluminescence properties of Ge nanocrystals in silicon oxide matrix (2004) (33)
- Enhanced optical emission from GaN films grown on a silicon substrate (1999) (33)
- Photoreflectance study of Si-doped GaN grown by metal–organic chemical vapor deposition (1998) (32)
- Effects of low-temperature-buffer, rf-power, and annealing on structural and optical properties of ZnO/Al2O3(0001) thin films grown by rf-magnetron sputtering (2009) (32)
- Titanium diffusion and residual stress of platinum thin films on Ti∕SiO2∕Si substrate (2005) (32)
- Influence of electrical stress voltage on cathode degradation of organic light-emitting devices (2001) (32)
- Audible acoustic wave emission in excimer laser interaction with materials (1996) (32)
- Stabilization of electrode migration in polymer electroluminescent devices (2002) (31)
- Current–voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGe∕n-(001)Ge contact (2005) (31)
- Mechanical properties of organic light-emitting thin films deposited on polymer-based barrier substrate: potential for flexible organic light-emitting displays (2002) (31)
- 4,9-Dihydro-s-indaceno[1,2-b:5,6-b’]dithiophene-embedded electrochromic conjugated polymers with high coloration efficiency and fast coloration time (2015) (31)
- Point defects analysis of zinc oxide thin films annealed at different temperatures with photoluminescence, Hall mobility, and low frequency noise (2010) (30)
- Exciton radiative lifetime in ZnO quantum dots embedded in SiOx matrix (2006) (30)
- InGaN nano-ring structures for high-efficiency light emitting diodes (2005) (30)
- Enhanced luminescence efficiency due to carrier localization in InGaN∕GaN heterostructures grown on nanoporous GaN templates (2008) (30)
- Polarization dependence of intraband absorption in self-organized quantum dots (1998) (30)
- InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant (2002) (30)
- Two-color infrared detection using intersubband transitions in multiple step quantum wells with superlattice barriers (1997) (29)
- Tris-(8-hydroxyquinoline)aluminum-modified indium tin oxide for enhancing the efficiency and reliability of organic light-emitting devices (2004) (29)
- Doping behavior of phosphorus in ZnO thin films: Effects of doping concentration and postgrowth thermal annealing (2010) (29)
- Characterization of drop-on-demand microdroplet printing (2010) (29)
- Improvement of hole injection in phenyl-substituted electroluminescent devices by reduction of oxygen deficiency near the indium tin oxide surface (2002) (29)
- Electronic and vibronic properties of Mg-doped GaN: The influence of etching and annealing (2002) (29)
- Investigation of V-defects formation in InGaN/GaN multiple quantum well grown on sapphire (2007) (29)
- Nanoheteroepitaxial lateral overgrowth of GaN on nanoporous Si(111) (2006) (29)
- Investigation of morphology and photoluminescence of hydrothermally grown ZnO nanorods on substrates pre-coated with ZnO nanoparticles (2009) (29)
- Edge plasmons and cut-off behavior of graphene nano-ribbon waveguides (2016) (28)
- Effects of annealing on structural and optical properties of InGaN/GaN multiple quantum wells at emission wavelength of 490 nm (2011) (28)
- Electrically and Thermally Tunable Smooth Silicon Metasurfaces for Broadband Terahertz Antireflection (2018) (28)
- ZnO nanorods with low intrinsic defects and high optical performance grown by facile microwave-assisted solution method. (2015) (28)
- Pyrrolophthalazine dione (PPD)-based donor–acceptor polymers as high performance electrochromic materials (2015) (28)
- Ultrawide band quantum dot light emitting device by postfabrication laser annealing (2007) (28)
- Nonlithographic nanopatterning through anodic aluminum oxide template and selective growth of highly ordered GaN nanostructures (2006) (28)
- Aluminum nitride on insulator (AlNOI) platform for mid-infrared photonics. (2019) (27)
- On the Prediction of Ternary Semiconductor Properties by Artificial Intelligence Methods (2002) (27)
- Tuning InAs quantum dots for high areal density and wideband emission (2007) (27)
- Annealing effects on electrical and optical properties of ZnO thin-film samples deposited by radio frequency-magnetron sputtering on GaAs (001) substrates (2007) (27)
- Low frequency noise analysis on organic thin film transistors (2008) (27)
- Gallium and indium co-doping of epitaxial zinc oxide thin films grown in water at 90 °C (2011) (27)
- Effects of Chemical Composition, Film Thickness, and Morphology on the Electrochromic Properties of Donor-Acceptor Conjugated Copolymers Based on Diketopyrrolopyrrole. (2015) (27)
- SILICA CAPPING FOR AL0.3GA0.7AS/GAAS AND IN0.2GA0.8AS/GAAS QUANTUM WELL INTERMIXING (1998) (27)
- InGaN nanorings and nanodots by selective area epitaxy (2005) (27)
- Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1−x (2006) (27)
- Realization of intrinsic p-type ZnO thin films by metal organic chemical vapor deposition (2005) (26)
- Strong Coupling between Dark Plasmon and Anapole Modes. (2019) (26)
- Atomic layer deposition of crystalline Bi2O3thin films and their conversion into Bi2S3by thermal vapor sulfurization (2014) (26)
- Solution epitaxy of gallium-doped ZnO on p-GaN for heterojunction light-emitting diodes (2010) (26)
- Catalyst-free growth of uniform ZnO nanowire arrays on prepatterned substrate (2006) (25)
- Influence of N incorporation on In content in GaInNAs∕GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy (2006) (25)
- Micro-Raman scattering in laterally epitaxial overgrown GaN (2002) (25)
- Influence of composition pulling effect on the two-dimensional electron gas formed at AlyInxGa1−x−yN∕GaN interface (2005) (25)
- Structural and optical properties of InGaN∕GaN multiple quantum wells grown on nano-air-bridged GaN template (2006) (25)
- Organic light emitting devices performance improvement by inserting thin parylene layer (2004) (25)
- The influence of nitrogen plasma treatment on the lattice vibrational properties of hydrothermally grown ZnO nanorods (2008) (25)
- Nanoscale epitaxial overgrowth process and properties of GaN layers on Si (111) substrates (2006) (24)
- Fabrication of deeply undercut GaN-based microdisk structures on silicon platforms (2007) (24)
- Optimization of hydrothermal growth ZnO Nanorods for enhancement of light extraction from GaN blue LEDs (2010) (24)
- Effect of parylene layer on the performance of OLED (2004) (24)
- Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator (2019) (24)
- Crack-free fully epitaxial nitride microcavity with AlGaN /GaN distributed Bragg reflectors and InGaN /GaN quantum wells (2006) (23)
- Effects of oxygen on low-temperature growth and band alignment of ZnO∕GaN heterostructures (2008) (23)
- Morphological and electrical properties of indium tin oxide films prepared at a low processing temperature for flexible organic light-emitting devices (2001) (23)
- A transition solvent strategy to print polymer:fullerene films using halogen-free solvents for solar cell applications (2014) (23)
- A study of the material loss and other processes involved during annealing of GaN at growth temperatures (2003) (23)
- Solution-Grown ZnO Films toward Transparent and Smart Dual-Color Light-Emitting Diode. (2016) (23)
- Ordered InP nanostructures fabricated by Ar+-ion irradiation (2006) (22)
- High Quality GaN Grown from a Nanoporous GaN Template (2007) (22)
- Selective Growth of ZnO Nanorod Arrays on a GaN/Sapphire Substrate Using a Proton Beam Written Mask (2008) (22)
- Improvement of microstructural and optical properties of GaN layer on sapphire by nanoscale lateral epitaxial overgrowth (2006) (22)
- A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas (2016) (22)
- 2 x 2 optical waveguide switch with bow-tie electrode based on carrier-injection total internal reflection in SiGe alloy (2001) (22)
- Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high-k gate dielectrics using x-ray photoelectron spectroscopy (2008) (22)
- Temperature-dependent photoluminescence of GaInP/AlGaInP multiple quantum well laser structure grown by metalorganic chemical vapor deposition with tertiarybutylarsine and tertiarybutylphosphine (2003) (21)
- Dual-wavelength laser source monolithically integrated with Y-junction coupler and isolator using quantum-well intermixing (2000) (21)
- Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence (2013) (21)
- Investigation of the Device Degradation Mechanism in Pentacene-Based Thin-Film Transistors Using Low-Frequency-Noise Spectroscopy (2010) (21)
- Vacancy effects on plasma-induced damage to n-type GaN (2001) (21)
- Micro-Raman probing of residual stress in freestanding GaN-based micromechanical structures fabricated by a dry release technique (2007) (20)
- A compact structure for realizing Lorentzian, Fano, and electromagnetically induced transparency resonance lineshapes in a microring resonator (2019) (20)
- Influence of the alignment of ZnO nanorod arrays on light extraction enhancement of GaN-based light-emitting diodes (2011) (20)
- A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration (2010) (20)
- Nanoepitaxy to improve the efficiency of InGaN light-emitting diodes (2008) (20)
- Ultrafast and Robust UV Luminescence from Cu‐Doped ZnO Nanowires Mediated by Plasmonic Hot Electrons (2016) (19)
- An in situ sheet resistance study of oxidative-treated indium tin oxide substrates for organic light emitting display applications (2002) (19)
- Generation of amber III-nitride based light emitting diodes by indium rich InGaN quantum dots with InGaN wetting layer and AlN encapsulation layer (2010) (19)
- Fully soluble poly(p-phenylenevinylene)s via propagation control of the polymer chain conjugated lengths (2000) (19)
- Blue to deep UV light emission from a p-Si/AlN/Au heterostructure (2009) (19)
- Fabricating high-quality GaN-based nanobelts by strain-controlled cracking of thin solid films for application in piezotronics (2012) (19)
- Raman scattering probe of anharmonic effects in NiSi (2004) (19)
- Integration of GaAs epitaxial layer to si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques (2007) (19)
- Extended Drude Model for Intraband-Transition-Induced Optical Nonlinearity (2019) (19)
- Effects of Ti Incorporation in Ni on Silicidation Reaction and Structural/Electrical Properties of NiSi (2004) (19)
- Optical and Electrical Properties of Ga-Doped ZnO Single Crystalline Films Grown on MgAl2O4(111) by Low Temperature Hydrothermal Synthesis (2010) (19)
- Improvement of efficiency and stability of polymer light-emitting devices by modifying indium tin oxide anode surface with ultrathin tetrahedral amorphous carbon film (2005) (19)
- Epitaxial growth and chemical lift-off of GaInN/GaN heterostructures on c- and r-sapphire substrates employing ZnO sacrificial templates (2010) (19)
- Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system (2014) (19)
- 1×2 optical waveguide filters based on multimode interference for 1.3- and 1.55-μm operation (2002) (19)
- Growth and structural properties of thick InAs films on GaAs with low-pressure metalorganic vapor phase epitaxy (2004) (18)
- Temperature-varied photoluminescence and magnetospectroscopy study of near-band-edge emissions in GaN (2001) (18)
- Strong influence of SiO2 thin film on properties of GaN epilayers (1999) (18)
- Quantum dots excited InGaN/GaN phosphor-free white LEDs (2008) (18)
- Near-infrared photodetection with plasmon-induced hot electrons using silicon nanopillar array structure (2018) (18)
- Correlation of a generation-recombination center with a deep level trap in GaN (2015) (18)
- Optical and microstructural properties versus indium content in InxGa1−xN films grown by metal organic chemical vapor deposition (2010) (18)
- Effect of high temperature and interface treatments on photoluminescence from InGaN/GaN multiple quantum wells with green light emissions (2003) (18)
- Conformational analysis (ab initio HF/3-21G*) and optical properties of poly(thiophene-phenylene-thiophene) (PTPT) (2002) (18)
- Considerations for polarization insensitive optical switching and modulation using strained InGaAs/InAlAs quantum well structure (1991) (18)
- Evaluation of III-V Multilayer Transport Parameters Using Quantitative Mobility Spectrum Analysis (1997) (18)
- Investigation of the V-pit related morphological and optical properties of InGaN∕GaN multiple quantum wells (2008) (17)
- III-nitride Light-emitting Diode with Embedded Photonic Crystals (2013) (17)
- Flexible polymer light emitting devices using polymer-reinforced ultrathin glass (2005) (17)
- A 1 × 2 optical switch using one multimode interference region (2008) (17)
- Effect of carrier density on the surface morphology and optical properties of nanoporous GaN prepared by UV assisted electrochemical etching (2007) (17)
- Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs (2008) (17)
- Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs (1998) (17)
- Empirical Model for Density and Length Prediction of ZnO Nanorods on GaN Using Hydrothermal Synthesis (2007) (17)
- Structural and photoluminescence study of thin GaN film grown on silicon substrate by metalorganic chemical vapor deposition (2007) (17)
- Bubble formation due to electrical stress in organic light emitting devices (2002) (17)
- Kinetics of NiSi-to-NiSi2 transformation and morphological evolution in nickel silicide thin films on Si(001) (2006) (17)
- Two-mode interference photonic waveguide switch (2003) (17)
- Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition (2004) (17)
- Defect reduction by periodic SiNx interlayers in gallium nitride grown on Si (111) (2007) (17)
- Evolution of AlN buffer layers on silicon and effects on the properties of epitaxial GaN films (2003) (17)
- Thermal annealing study of the mid-infrared aluminum nitride on insulator (AlNOI) photonics platform. (2019) (16)
- High carrier injection optical switch based on two-mode interference in SiGe alloy (2002) (16)
- Electron transfer efficiency of Si δ-modulation-doped pseudomorphic GaAs/In0.2Ga0.8As/AlxGa1−xAs quantum wells (1998) (16)
- Morphological and structural analyses of plasma-induced damage to n-type GaN (2002) (16)
- Metal-nanoparticle-coating-induced enhancement and weakening of resonant Raman scattering in ZnO: effect of surface electric field (2011) (16)
- Photoluminescence of InGaN/GaN multiple quantum wells originating from complete phase separation (2003) (16)
- The influence of V defects on luminescence properties of AlInGaN quaternary alloys (2005) (16)
- Study of electrically active defects in n-GaN layer (2001) (15)
- Optical transitions in InGaN/GaN quantum wells: effects of the piezoelectric field (2004) (15)
- Synthesis and characterization of a novel blue electroluminescent polymer constituted of alternating carbazole and aromatic oxadiazole units (1999) (15)
- Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interface (2004) (15)
- Ultracompact, multifunctional, and highly integrated 3×2 photonic switches (2004) (15)
- Radio-frequency magnetron sputtering and wet thermal oxidation of ZnO thin film (2007) (15)
- Micro‐Raman spectroscopy of Si‐, C‐, Mg‐ and Be‐implanted GaN layers (2004) (15)
- Theoretical study of characteristics in GaN metal semiconductor metal photodetectors (2003) (15)
- Effect of substrate temperature on spontaneous GaN nanowire growth and optoelectronic properties (2009) (15)
- Photoluminescence degradation in organic light-emitting devices (2002) (15)
- Strong Screening Effect of Photo-Generated Carriers on Piezoelectric Field in In0.13Ga0.87N/In0.03Ga0.97N Quantum Wells (2002) (15)
- Versatile pattern generation of periodic, high aspect ratio Si nanostructure arrays with sub-50-nm resolution on a wafer scale (2013) (15)
- Colloidal woodpile structure: three-dimensional photonic crystal with a dual periodicity. (2006) (15)
- Inductively coupled plasma etching of GaN using BCl3/Cl2 chemistry and photoluminescence studies of the etched samples (2000) (15)
- Morphology controllable ZnO growth on facet-controlled epitaxial lateral overgrown GaN/sapphire templates (2007) (15)
- Improved Mg-doped GaN films grown over a multilayered buffer (1998) (15)
- InGaN∕GaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates (2005) (15)
- Temperature dependence of photoluminescence intensity from AlGaInP/GaInP multi-quantum well laser structures (2004) (15)
- Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing (2000) (14)
- Temperature-dependent photoluminescence study of 1.3μm undoped InAs∕InGaAs∕GaAs quantum dots (2008) (14)
- Two-dimensional AlGaInP∕GaInP photonic crystal membrane lasers operating in the visible regime at room temperature (2007) (14)
- Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate (2018) (14)
- Saturated dot density of InAs∕GaAs self-assembled quantum dots grown at high growth rate (2007) (14)
- Conformational analysis on biphenyls with theoretical calculations: modeling torsions in poly(para-phenylene)s with side chains (2000) (14)
- Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched nanoporous GaN (2011) (14)
- Large-area zinc oxide nanorod arrays templated by nanoimprint lithography: control of morphologies and optical properties (2016) (14)
- Inductively Coupled Plasma Etching of InP with HBr ∕ O2 Chemistry (2008) (14)
- Molecular‐beam epitaxy of high quality lattice matched In1−x−yGaxAlyAs epitaxial layers on InP substrates (1996) (14)
- Intelligent integration of optical power splitter with optically switchable cross-connect based on multimode interference principle in SiGe∕Si (2004) (14)
- Effects of 248 nm excimer laser irradiation on the properties of Mg-doped GaN (2005) (14)
- Influence of donor and acceptor substituents on the electronic characteristics of poly(fluorene–phenylene) (2002) (14)
- Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition (2002) (14)
- Honeycomb GaN micro-light-emitting diodes (2006) (14)
- Influence of Si doping on the infrared reflectance characteristics of GaN grown on sapphire (1999) (14)
- Silica nanocone array as a template for fabricating a plasmon induced hot electron photodetector (2019) (13)
- Rutherford backscattering analysis of GaN decomposition (2003) (13)
- Exciton related stimulated emission in ZnO polycrystalline thin film deposited by filtered cathodic vacuum arc technique (2006) (13)
- Determination of carrier concentration dependent electron effective mass and scattering time of n-ZnO thin film by terahertz time domain spectroscopy (2014) (13)
- The effects of cap layers on electrical properties of indium nitride films (2010) (13)
- Recrystallization of carbon–aluminum ion coimplanted epitaxial silicon carbide—evidenced by room temperature optical measurements (1999) (13)
- Effects of indium surfactant on the crystalline and optical properties of GaN during initial growth stage (2003) (13)
- Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition (2006) (13)
- Structural characterization of rapid thermal oxidized Si1−x−yGexCy alloy films grown by rapid thermal chemical vapor deposition (2000) (13)
- High temperature annealing of hydrogenated amorphous silicon carbide thin films (2001) (13)
- Epitaxial Synthesis, Band Offset, and Photoelectrochemical Properties of Cubic Ga2S3 Thin Films on GaAs (111) Substrates (2014) (13)
- A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers (2021) (13)
- Selective growth of GaAs quantum dots on the triangle nanocavities bounded by SiO2 mask on Si substrate by MBE (2004) (13)
- (Invited) SiGe and III-V Materials and Devices: New HEMT and LED Elements in 0.18-Micron CMOS Process and Design (2016) (13)
- Template-directed selective growth of ordered ZnO nanostructures on GaN by the hydrothermal method (2008) (13)
- Understanding Dark Spot Formation and Growth in Organic Light-Emitting Devices by Controlling Pinhole Size and Shape (2002) (12)
- Continuous-wave operation of AlGaInP/GaInP quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine (2004) (12)
- Characterization of titanium silicide by Raman spectroscopy for submicron IC processing (1998) (12)
- A nano-patterned organic light-emitting diode with high extraction efficiency (2006) (12)
- Synthesis of 1,4-bis(1,3,4-oxadiazol-2-yl)-2,5-dialkoxybenzene–oligothiophene copolymers with different emissive colors: synthetically tuning the photoluminescence of conjugated polymers (1998) (12)
- Infrared and Raman spectroscopic study ofZn1−xMnxSematerials grown by molecular-beam epitaxy (1999) (12)
- Theoretical analysis of Si1−x−yGexCy near-infrared photodetectors (2003) (12)
- Determining substrate orientation using a high-resolution diffractometer (1998) (12)
- Ultralow-Power LED-Enabled On-Chip Optical Communication Designed in the III-Nitride and Silicon CMOS Process Integrated Platform (2014) (12)
- Surface micromachined freestanding ZnO microbridge and cantilever structures on Si(111) substrates (2007) (12)
- Degradation mechanisms in electrically stressed organic light-emitting devices (2002) (12)
- Formation and Morphology Evolution of Nickel Germanides on Ge (100) under Rapid Thermal Annealing (2004) (12)
- Enabling the integrated circuits of the future (2015) (12)
- Fabrication of Freestanding GaN Micromechanical Structures on Silicon-on-Insulator Substrates (2005) (12)
- Effects of lift-off and strain relaxation on optical properties of InGaN/GaN blue LED grown on 150 mm diameter Si (111) substrate (2014) (12)
- Characterization of graded InGaN/GaN epilayers grown on sapphire (2004) (12)
- Protonation of Bipyridines and Their Vinylene−Phenylene−Vinylene Derivatives: Theoretical Analysis of the Positive Charge Effects (2001) (11)
- The Hall mobility and its relationship to the persistent photoconductivity of undoped GaN (1999) (11)
- Donor-hydrogen bound exciton in epitaxial GaN (1999) (11)
- Growth-temperature- and thermal-anneal-induced crystalline reorientation of aluminum on GaAs (100) grown by molecular beam epitaxy (2007) (11)
- Monitoring of TiSi/sub 2/ formation on narrow polycrystalline silicon lines using Raman spectroscopy (1998) (11)
- Bubble formation and growth in organic light-emitting diodes composed of a polymeric emitter and a calcium cathode (2002) (11)
- Photovoltaic characteristics of InAs/InGaAs/GaAs QD heterostructures (2009) (11)
- Annihilation of threading dislocations in strain relaxed nano‐porous GaN template for high quality GaN growth (2007) (11)
- Reverse current transport mechanism in shallow junctions containing silicide spikes (2002) (11)
- Effects of doping and indium inclusions on the structural and optical properties of InN thin films grown by MOCVD (2012) (11)
- Influence of Rapid Thermal Annealing on the Luminescence Properties of Nanoporous GaN Films (2006) (11)
- Influence of phosphorus doping and post-growth annealing on electrical and optical properties of ZnO/c-sapphire thin films grown by sputtering (2011) (11)
- GAN EXCITON PHOTOVOLTAIC SPECTRA AT ROOM TEMPERATURE (1997) (11)
- Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate (2013) (11)
- Photoluminescence and photoelectron spectroscopic analysis of InGaAsN grown by metalorganic chemical vapor deposition (2001) (11)
- Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer (1998) (11)
- Characteristics of 1.3 μm InAs/InGaAs/GaAs quantum dot electroabsorption modulator (2009) (11)
- Effect of organic layer combination on dark spot formation in organic light emitting devices (2004) (11)
- Dislocation scattering in n-GaN (2001) (10)
- Substrate orientation dependence of In composition of AlGaInP epilayers grown by MOCVD (2004) (10)
- Reflection-type optical waveguide switch with bow-tie electrode (2002) (10)
- Nanoheteroepitaxy of GaN on a nanopore array of Si(111) surface (2007) (10)
- Effect of growth interruption on photoluminescence of self-assembled InAs quantum dot structures grown on (0 0 1) InP substrate by MOCVD (2000) (10)
- Influence of catalytic systems in Stille polymerization on the electrochromic performance of diketopyrrolopyrrole-based conjugated polymers (2018) (10)
- Annealing behavior of N-bonding configurations in GaN0.023As0.977 ternary alloy grown on GaAs (001) substrate by molecular beam epitaxy (2006) (10)
- 650-nm AlGaInP multiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine (2003) (10)
- Impurity free vacancy disordering of InAs/GaAs quantum dot and InAs/InGaAs dot-in-a-well structures (2007) (10)
- Influence of catalytic systems in Stille polymerization on the electrochromic performance of diketopyrrolopyrrole-based conjugated polymers (2018) (10)
- Hybrid modes in plasmonic cavity array for enhanced hot-electron photodetection. (2017) (10)
- Impact of self-assembled monolayer on low frequency noise of organic thin film transistors (2008) (10)
- Structural and strain anisotropies of N-polar GaN epilayers on offcut sapphire substrates (2016) (10)
- Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a “nucleation-augmented” method (2004) (10)
- A study of charge mobility characteristics in a series of biphenylyl substituted PPV derivatives (2005) (10)
- Deep level centers in InGaN/GaN heterostructure grown on sapphire and free-standing GaN (2007) (10)
- Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth (2008) (10)
- Building blocks for ultrathin flexible organic electroluminescent devices (2002) (10)
- Influences of group-III source preflow on the polarity, optical, and structural properties of GaN grown on nitridated sapphire substrates by metal-organic chemical vapor deposition (2015) (10)
- Electronic and vibronic properties of n-type GaN: the influence of etching and annealing (2002) (9)
- Control of the band-gap shift in quantum-well intermixing using a germanium interlayer (2000) (9)
- Raman scattering from nanopatterned silicon surface prepared by low-energy Ar+-ion irradiation (2006) (9)
- Characterization of GaN layers grown on silicon-on-insulator substrates (2006) (9)
- Testing the upper limit of InAs/GaAs self-organized quantum dots density by fast growth rate (2008) (9)
- Two-dimensional Photonic Crystals Fabricated by Nanoimprint Lithography (2005) (9)
- Band offsets at the InAlGaAs/InAlAs (001) heterostructures lattice matched to an InP substrate (1998) (9)
- Distributed Bragg reflector laser using buried SiO2 grating and self-aligned band gap tuning (2007) (9)
- Multi-wavelength lasers fabricated by an Al layer controlled quantum well intermixing technology (2000) (9)
- Photoreflectance study on the surface states of n-type GaN (1999) (9)
- Origins of high radiative efficiency and wideband emission from InAs quantum dots (2007) (9)
- Blueshift of effective band gap in n-i-p-i doping superlattices as a function of optical excitation intensity (1998) (9)
- Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates (2013) (9)
- Nanosphere lithography from template-directed colloidal sphere assemblies. (2006) (9)
- Blueshift of In0.2Ga0.8N/GaN single quantum well band gap energy by rapid thermal annealing (1999) (9)
- Novel blue photoluminescent copolymers containing bipyridine and organosilicon (2000) (8)
- Dislocation evolution in epitaxial multilayers and graded composition buffers (2001) (8)
- Control and improvement of crystalline cracking from GaN thin films grown on Si by metalorganic chemical vapor deposition (2006) (8)
- Theoretical study of the structure and torsional potential of substituted biphenylenes and their fluorene derivatives (2002) (8)
- Enhancement of responsivity for a transistor terahertz detector by a Fabry-Pérot resonance-cavity (2017) (8)
- High‐field electron transport for ellipsoidal multivalley band structure of silicon (1992) (8)
- Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers (2013) (8)
- Inverted hexagonal pits formation in AlInGaN epilayer (2004) (8)
- Structural properties of ZnO grown on GaN/sapphire templates : The transition from nanorods to thin films (2007) (8)
- An approach to the design of highly selective resonant-cavity-enhanced photodetectors (2005) (8)
- GaN-based microdisk light emitting diodes on (111)-oriented nanosilicon-on-insulator templates (2008) (8)
- SUBWAVELENGTH PERIODIC RIPPLE FORMATION ON GaN SURFACE BY FEMTOSECOND LASER PULSES (2005) (8)
- Al incorporation in AlGaN on (112¯2) and (0 0 0 1) surface orientation (2006) (8)
- Ultrathin Film Broadband Terahertz Antireflection Coating Based on Impedance Matching Method (2017) (8)
- Jettable fluid space and jetting characteristics of a microprint head (2012) (8)
- Influence of Be on N composition in Be-doped InGaAsN grown by RF plasma-assisted molecular beam epitaxy (2004) (8)
- Correlation between the infrared reflectance and microstructure of thin gallium nitride films grown on silicon substrates (2000) (8)
- The rate equation based optical model for phosphor-converted white light-emitting diodes (2017) (8)
- Lattice vibrations in In1−x−yGaxAlyAs quaternary alloys (1996) (8)
- Synthesis and characterization of a novel poly(p-phenylenevinylene) derivative carrying an oxadiazole side chain with improved electron affinity (2000) (8)
- Growth of InN and its effect on InGaN epilayer by metalorganic chemical vapor deposition (2007) (8)
- Organic light‐emitting device dark spot growth behavior analysis by diffusion reaction theory (2001) (8)
- A Barium Titanate‐on‐Oxide Insulator Optoelectronics Platform (2021) (8)
- GaN epilayers on nanopatterned GaN/Si(1 1 1) templates: Structural and optical characterization (2006) (8)
- Si layer transfer to InP substrate using low-temperature wafer bonding (2006) (8)
- Low frequency optical noise from organic light emitting diode (2008) (8)
- Role of hot electron scattering in epsilon-near-zero optical nonlinearity (2020) (8)
- Tapered and aperiodic silicon nanostructures with very low reflectance for solar hydrogen evolution (2012) (8)
- High-quality InAs grown on GaAs substrate with an in situ micro-structured buffer (2004) (7)
- Contact Resistivity Dependence on Ge:Ni Ratio in AuNiAuGe Metallization on n-GaAs (1994) (7)
- GaN-based semiconductor saturable absorber mirror operating around 415 nm (2007) (7)
- Fabrication of Efficient Light-Emitting Diodes With a Self-Assembled Photonic Crystal Array of Polystyrene Nanoparticles (2008) (7)
- Phase separation in AlGaN/GaN heterojunction grown by metalorganic chemical vapor deposition (2004) (7)
- Properties of InxGa1−xN films in terahertz range (2012) (7)
- Optical properties of 1.3 μm InAs/GaAs bilayer quantum dots with high areal density (2009) (7)
- Effects of size and shape on electronic states of quantum dots (2007) (7)
- Low Temperature Aqueous Solution Route to Reliable p-Type Doping in ZnO with K: Growth Chemistry, Doping Mechanism, and Thermal Stability (2012) (7)
- Enhancing the electrochromic performance of conjugated polymers using thermal nanoimprint lithography (2017) (7)
- Polarisation dependence of field-induced refractive index variation in strained and unstrained quantum well structures (1990) (7)
- Enhanced backscattering by multiple nanocylinders illuminated by TE plane wave (2008) (7)
- Electron-beam-induced carbon deposition on high-indium-content AlInN thin films grown on Si by sputtering at elevated temperature (2014) (7)
- First-principles calculations of band offsets (1998) (7)
- Terahertz wire-grid polarizer by nanoimprinting lithography on high resistivity silicon substrate (2010) (7)
- Excimer-Laser-Induced Oxidation of GaN Epilayer (2003) (7)
- Magnesium fluoride modified interfaces for organic light-emitting diode (2007) (7)
- Effect of rapid thermal annealing on the properties of GaNAs thin films grown by molecular beam epitaxy (2006) (7)
- Photoluminescence observations in band‐gap tailored InGaAlAs epilayers lattice matched to InP substrate (1996) (7)
- Integration of GaN thin films to SiO2–Si(100) substrates by laser lift-off and wafer fusion method (2006) (6)
- Growth optimization and characterization of GaN epilayers on multifaceted (111) surfaces etched on Si(100) substrates (2015) (6)
- Zinc Oxide Nanorod Arrays: Properties and Hydrothermal Synthesis (2007) (6)
- Influence of the polarization on interfacial properties in Al/SiO2/GaN/Al0.4Ga0.6N/GaN heterojunction metal–insulator–semiconductor structures (2003) (6)
- Brownian motion field dependent mobility theory of hopping transport process (2006) (6)
- Electron-hole plasma emission from In 0.3 Ga 0.7 N / G a N multiple quantum wells (2001) (6)
- Impurity-free intermixing in compressively strained InGaAsP multiple quantum well structures (2001) (6)
- Thermal annealing effect on GaNAs epilayers with different nitrogen compositions grown by MOCVD (2007) (6)
- Control of morphology and performance of diketopyrrolopyrrole-based electrochromic polymers using solvent vapor annealing (2018) (6)
- Distribution of Photoresist over GaAs Mesa Structures (1994) (6)
- Secondary Ion Mass Spectroscopy Study of Failure Mechanism in Organic Light Emitting Devices (2003) (6)
- Modelling of GaN HEMTs as Terahertz Detectors Based on Self-Mixing (2016) (6)
- The hall mobility and its relationship with persistent photoconductivity of undoped GaN (2000) (6)
- Electroabsorption Characteristics of Single-Mode 1.3-$\mu$m InAs–InGaAs–GaAs Ten-Layer Quantum-Dot Waveguide (2010) (6)
- Surface Modification and Ohmic Contact Formation to n and p-Type GaN (2001) (6)
- Design and fabrication of subwavelength nanogratings based light-emitting diodes (2011) (5)
- Influence of substrate misorientation on vibrational properties of In1−x−yGaxAlyAs grown on InP (2004) (5)
- Deep level traps in GaN LEDs grown by metal organic vapour phase epitaxy on an 8 inch Si(111) substrate (2016) (5)
- Optical activation of Eu ions in nanoporous GaN films (2006) (5)
- Enhanced light output from light emitting diodes with two-dimensional cone-shape nanostructured surface (2013) (5)
- Photoluminescence of compressively strained AlGaInP/GaInP quantum well structures grown by MOCVD (2004) (5)
- Tuning epsilon-near-zero wavelength of indium tin oxide film via annealing (2020) (5)
- Self assembled ZnO hollow spheres and hexagonal stacking disks by metal-organic chemical-vapour deposition (2007) (5)
- InGaN self‐organized quantum dots grown by metalorganic chemical vapour deposition (MOCVD) (2003) (5)
- MOCVD Growth of High Quality InGaAs HEMT Layers on Large Scale Si Wafers for Heterogeneous Integration With Si CMOS (2017) (5)
- Symmetrical 1x2 digital photonic splitting switch with low electrical power consumption in SiGe waveguides. (2005) (5)
- Synthesis and characterization of Ge nanocrystals immersed in amorphous SiOx matrix (1999) (5)
- Temperature Dependence of Bound Exciton Emissions in GaN (1998) (5)
- Silicon-Based Quantum Mechanical Tunnel Junction for Plasmon Excitation from Low-Energy Electron Tunneling (2021) (5)
- Photonic band structure of nanoporous anodized aluminum oxide with radius-to-period ratio modulation (2010) (5)
- On overannealing of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy (2007) (5)
- Anomalous optical transitions in AlInGaN/GaN heterostructures grown by metalorganic chemical vapor deposition (2005) (5)
- Features of InGaAlAs/InP heterostructures (1998) (5)
- Growth of InGaN nanopyramid arrays on Si for potential photovoltaic applications (2015) (5)
- Near-field optical characterization of GaN and InxGa1−xN/GaN heterostructures grown on freestanding GaN substrates (2005) (5)
- The study of piezoelectric effect in wurtzite GaN/InGaN/AlGaN multilayer structures (1998) (5)
- Self-aligned metal-contact and passivation technique for submicron ridge waveguide laser fabrication (2008) (5)
- Activation of beryllium-implanted GaN by two-step annealing (1999) (5)
- Enhanced carrier injection in InGaN/GaN multiple quantum wells LED with polarization-induced electron blocking barrier (2016) (5)
- InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization (2007) (5)
- Quantum 1/f noise in epitaxial lateral overgrown GaN: piezoelectric effect (2002) (5)
- X-ray Photoelectron Spectroscopy Evaluation on Surface Chemical States of GaN, InGaN and AlGaN Heteroepitaxial Thin Films Grown on Sapphire by MOCVD (2000) (5)
- Erratum: “Micro-Raman investigation of strain in GaN and AlxGa1−xN/GaN heterostructures grown on Si(111)” [J. Appl. Phys. 92, 3503 (2002)] (2003) (5)
- Monosilicide-disilicide-silicon phase equilibria in the nickel-platinum-silicon and nickel-palladium-silicon systems (2004) (5)
- Ultracompact and large-scale power splitters on silicon-based two-dimensional photonic crystals at near-infrared wavelengths (2006) (5)
- InGaAsP/GaInP/AlGaInP 0.8 μm QW lasers grown by MOCVD using TBP and TBAs (2005) (5)
- High-density InGaN nanodots grown on pretreated GaN surfaces (2006) (5)
- Optical property of a novel (111)-oriented quantum structure (1997) (5)
- Polarization-insensitive electroabsorption in strained GaInAs/AlInAs quantum well structures (1994) (5)
- Optimized Silicon Nanostructures Formed by One-Step Metal-Assisted Chemical Etching of Si(111) Wafers for GaN Deposition (2014) (5)
- MOCVD Growth and Characterization of GaN Films with Composite Intermediate Layer Buffer on Si Substrate (1999) (5)
- Influence of Buffer Layer on Structural and Optical Properties of ZnO Nanorods on Glass Substrates (2008) (5)
- On-chip Optical Interconnects using InGaN Light-Emitting Diodes Integrated with Si-CMOS (2014) (5)
- Template-nonlithographic nanopatterning for site control growth of InGaN nanodots (2006) (4)
- MOCVD growth of 980 nm InGaAs/GaAs/AlGaAs graded index separate confinement heterostructure quantum well lasers with tertiarybutylarsine (2006) (4)
- Carrier capture in InAs monolayer quantum wells grown on GaAs substrates (1998) (4)
- Micro-raman spectroscopic investigation of NiSi films formed on BF2 +-, B+-and nonimplanted (100) Si substrates (2002) (4)
- (Invited) Novel Integrated Circuit Platforms Employing Monolithic Silicon CMOS + GaN Devices (2016) (4)
- Design, Fabrication, and Characterization of Photonic Devices II (1999) (4)
- Si and C δ-doping for device applications (1998) (4)
- Threading dislocations annihilation in regrown GaN film on nanoporous GaN template (2009) (4)
- Efficient light-emitting diodes fabricated with a spin-on photonic crystal surface grating (2006) (4)
- Direct observation and theoretical interpretation of strongly enhanced lateral diffusion of photogenerated carriers in InGaN∕GaN quantum well structures (2005) (4)
- Observation of carrier concentration saturation effect in n‐type AlxGa1−xAs (1995) (4)
- Magnetic and Photoluminescent Coupling in SrTi0.87Fe0.13O3-δ/ZnO Vertical Nanocomposite Films. (2017) (4)
- Novel tunable phosphor‐free white III‐nitride light emitting diodes based on indium rich InGaN nanostructures (2009) (4)
- EFFECT OF MULTIPLE SCATTERING IN A QUANTUM WELL (1993) (4)
- Study of Phase‐Separated InGaN Grown by Metalorganic Vapor Phase Epitaxy (1999) (4)
- The design of triple rib waveguide couplers by the discrete spectral index method (1999) (4)
- Photoreflectance study of Au-schottky contacts on n-GaN (1999) (4)
- Complex-Coupled DFB Laser Using a Buried SiO$_{2}$ Grating (2008) (4)
- Incorporation of self assembled In-rich InGaN nanostructure to achieve redshift in InGaN/GaN heterostructures (2007) (4)
- Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing (2003) (4)
- Infrared reflectance studies of GaN epitaxial films on sapphire substrate (1999) (4)
- Luminescence anomaly in band gap tailored In0.53(GaxAl1 − x)0.47As quaternary alloy grown by molecular beam epitaxy (1997) (4)
- Shot noise characteristics of a resonant tunneling diode (1994) (4)
- Built-in electric field enhancement/retardation on intermixing (2007) (4)
- Bandgap engineering in semiconductor quantum dots (2006) (4)
- Deposition and Characterizations of ZnO Thin Films on Al2O3 (0001) Substrates with III-Arsenide Intermediating Layers (2011) (4)
- Anneal-induced structural changes of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy (2007) (4)
- Contact resistivity measurement using four circular contacts (1992) (4)
- The Influence of Pt in a Ti—Al–Pt–Au Ohmic Contact on n‐Type GaN (1999) (4)
- Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substrates (1997) (4)
- GaN based nanorod light emitting diodes by selective area epitaxy (2010) (4)
- Synthesis and characterization of a novel conjugated polymer containing PPV oligomer and fluorene (2002) (4)
- Highly strained quantum structures grown on GaAs (0 0 1) vicinal substrate by MOCVD (2006) (4)
- Correlation of Current Noise Behavior and Dark Spot Formation in Organic Light-Emitting Diodes (2008) (4)
- Characterization of MBE-grown Ga1−xAlxAs alloy films by Raman scattering (1999) (4)
- Photoreflectance study of band-gap renormalization in Si-doped GaN (1998) (4)
- Electromigration in aluminum/silicon/copper metallization due to the presence of a thin oxide layer (1997) (3)
- Infrared reflectance study of chemical-vapor-deposition-grown 3C-silicon carbide on silicon substrate (2000) (3)
- Dislocation dynamics of strain relaxation in epitaxial layers (2001) (3)
- Erratum: “Strain relaxation due to V-pit formation in InxGa1−xN∕GaN epilayers grown on sapphire” [J. Appl. Phys. 98, 084906 (2005)] (2006) (3)
- Heavily silicon doped InGaAlAsInP epilayers grown by molecular beam epitaxy (1995) (3)
- Growth and Characterization of High Quality Continuous GaN Films on Si‐Doped Cracked GaN Templates (2001) (3)
- The Link between Gallium Vacancies and Plasma Damage to n-Type GaN (2001) (3)
- Generalized surface, pseudosurface, and high-frequency pseudosurface acoustic waves on (001), (110), and (111) InSb (2000) (3)
- Temperature dependence of Raman spectrum of GaNAs ternary alloys grown by molecular beam epitaxy (2006) (3)
- Hierarchical nano/microstructures on silicon surface with ultra low reflectance for photovoltaic applications (2012) (3)
- Investigation of the dependence of the contact resistance on the external gold layer in AuNiGeAu/n-GaAs (1991) (3)
- Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors (2003) (3)
- A Study of the Decomposition of GaN during Annealing over a Wide Range of Temperatures (2002) (3)
- PATTERNING OF TWO-DIMENSIONAL PHOTONIC CRYSTAL STRUCTURES BY NANOIMPRINT LITHOGRAPHY (2006) (3)
- Annealing-Induced Group V Intermixing in InAs ∕ InP Quantum Dots Probed by Micro-Raman Spectroscopy (2005) (3)
- CMOS-Compatible Electronic-Plasmonic Transducers Based on Plasmonic Tunnel Junctions and Schottky Diodes. (2021) (3)
- Optical waveguiding in semiconductor injection lasers and integrated optics (1977) (3)
- Erratum: “Effects of low-temperature-buffer, rf-power, and annealing on structural and optical properties of ZnO/Al2O3(0001) thin films grown by rf-magnetron sputtering” [J. Appl. Phys. 106, 023511 (2009)] (2009) (3)
- Below bandgap emission with intensity higher than band-to-band transition in GaAsN (2008) (3)
- Characteristics of threading dislocations in ZnO grown on facet-controlled epitaxial overgrown GaN templates (2007) (3)
- Sub-micron inGaN ring structures for high-efficiency LEDs (2004) (3)
- Doping dependence of intersubband transitions in Si1−xGexSi multiple quantum wells (1995) (3)
- Recombination mechanism of InGaN multiple quantum wells grown by metalorganic chemical vapor deposition (2005) (3)
- Semiconductor Photonics: Nano-Structured Materials and Devices (2008) (3)
- Effects of valence band tails on the blue and red spectral shifts observed in the temperature‐dependent photoluminescence of InN (2013) (3)
- ZnO Nanorods Grown on p-GaN Using Hydrothermal Synthesis and Its Optoelectronic Devices Application (2007) (3)
- Simulation of 1.55 μm distributed feedback semiconductor laser: investigation of dielectric grating yielding high coupling effect (2004) (3)
- Noise characterization of light-emitting devices based on conjugated copolymers of fluorene and thiophene moieties (2007) (3)
- Depth-resolved luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescence (2004) (3)
- Self-aligned current aperture in native oxidized AlInAs buried heterostructure InGaAsP/InP distributed feedback laser (2000) (3)
- Investigation of transmission of Au films with nanohole arrays created by nanosphere lithography (2012) (3)
- Structural and optical properties of GaInAs∕GaAs and GaInNAs∕GaNAs multiple quantum wells upon postgrowth annealing (2006) (3)
- Tuning redox behavior and emissive wavelength of conjugated polymers by p–n diblock structures — a theoretical investigation (2000) (3)
- Bulk instability of nickel disilicide at reduced temperatures (2005) (3)
- In0.2Ga0.8As/GaAs quantum well laser with C doped cladding and ohmic contact layers (1998) (3)
- Current dependence of pulsations in semiconductor lasers due to photon induced modulation of optical loss (1984) (3)
- Schottky contacts and conduction band offsets in bandgap engineered InGaAlAs/InP heterostructures (1996) (2)
- Recoverable Photodegradation of Light-Emitting Polymers (1999) (2)
- Acoustic wave monitoring in pulsed laser interaction with materials (1996) (2)
- Local vibrational modes in Gamma-irradiated GaN grown by metal-organic chemical vapor deposition (2001) (2)
- DFB Lasers with Tilted Waveguide for Multi-Wavelength Generation (2007) (2)
- Optoelectronics for electrical and computer engineering students (2002) (2)
- Origin and Quenching of Novel ultraviolet and blue emission in NdGaO3: Concept of Super-Hydrogenic Dopants (2016) (2)
- A polarization-insensitive fishnet/spacer/mirror plasmonic absorber for hot electron photodetection application (2020) (2)
- Evolution of resonant Raman scattering spectra of ZnO crystallites upon post-growth thermal annealing (2010) (2)
- Calculation of the R0A product in n+–n–p and p+–p–n GaInAsSb infrared detectors (2004) (2)
- A Facile One-Step Approach to Epitaxially Grow Periodic Arrays of InGaAs/GaAs Nanobars by Metal–Organic Chemical Vapor Deposition: From Site Control to Size Control (2014) (2)
- Anisotropic coalescence behaviors of GaN islands grown by metal-organic chemical vapor deposition (2008) (2)
- Simultaneous coupling of surface plasmon resonance and photonic bandgap to InGaAs quantum well emission (2016) (2)
- Interdigitated contact semiconductor laser as optoelectronic 'AND' gate (1991) (2)
- Optical and X-Ray Diffraction Characterization of MBE-Grown InGaAs, InAlAs and InGaAIAs on InP (1994) (2)
- Small-area Passivated Contact monoPolyTM Silicon Solar Cells for Tandem Device Integration (2019) (2)
- Substrate orientation effect on Zn δ-doping in GaAs grown by metal organic vapour-phase epitaxy (1998) (2)
- Visible-blind metal-semiconductor-metal ultra-violet detectors based on epitaxially laterally overgrown gallium nitride (2001) (2)
- A compact structure for realizing Lorentzian, Fano and EIT resonance lineshapes in a microring resonator (2019) (2)
- One-dimensional aligned InAs/InP quantum dots chain growth by metalorganic vapor phase epitaxy for 1.55 μm application (2007) (2)
- Investigation of Morphology and Photoluminescence of Hydrothermally-Grown ZnO Nanorods Grown on Substrates Pre-Coated with ZnO Nanoparticles (2007) (2)
- High quality AlGaInP epilayers grown by MOCVD using TBP for red lasers (2003) (2)
- Infrared Reflectance Investigation of Undoped and Si‐Doped GaN Films on Sapphire (1999) (2)
- Waveguide-Integrated MoTe2p-i-n Homojunction Photodetector. (2022) (2)
- Structural and optical properties of InAs bilayer quantum dots grown at constant growth rate and temperature (2011) (2)
- The effects of current spreading in the semiconductor on the determination of contact resistance (1990) (2)
- Channeling contrast microscopy on lateral epitaxial overgrown GaN (2001) (2)
- GaN‐based deep green light emitting diodes on silicon‐on‐insulator substrates (2009) (2)
- Evolution of AlN buffer layers on Silicon and the effect on the property of the expitaxial GaN film (2003) (2)
- Post-growth rapid thermal annealing effect on hydrogenated amorphous silicon carbide thin film (2001) (2)
- MOCVD growth of GaInNAs/GaAs multiple quantum wells with nitrogen composition fluctuation (2002) (2)
- Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si (2000) (2)
- NiSi formation in the Ni(Ti) /SiO 2 /Si System (2003) (2)
- Red emitting LEDs formed by indium rich quantum dots incorporated in MQWs (2011) (2)
- Gallium arsenide (GaAs) island growth under SiO2 nanodisks patterned on GaAs substrates (2010) (2)
- Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon (2005) (2)
- Transport study of a novel polyfluorene/poly(p-phenylenevinylene) copolymer by various mobility models (2007) (2)
- Optical Properties of InAs Quantum Dots Grown on InP (001) Substrate by MOCVD (2001) (2)
- Optimisation of pulsed anodic oxidation for the fabrication of AlGaInP laser diodes grown with tertiarybutylarsine and tertiarybutylphosphine (2005) (2)
- Suppression of Interference-Induced Reflectivity Fluctuations in GaN-Based Semiconductor Saturable Absorber Mirror (2008) (2)
- Enhanced Blue-Light Emission from InGaN/GaN Quantum Wells Grown over Multilayered Buffer on Silicon Substrate by Metal Organic Chemical Vapor Deposition (1999) (2)
- Material properties of GaN grown by MOCVD (1999) (2)
- Semiconductor Laser Using Multimode Interference (MMI) Principle (2008) (2)
- Modelling of a resonant tunnelling hot electron transistor (1993) (2)
- AlGaAs optical phonon replicas in the photoluminescence spectra of GaAs layer in an Al0.3Ga0.7As/GaAs heterostructure (1996) (2)
- Luminescence properties of multi-layer InGaN quantum dots grown on C- and (2005) (2)
- Optimized design parameters of InGaAsInP quantum well lasers (1995) (2)
- Electrical and optical properties of an alcohol soluble aminoalkyl-substituted cationic conjugated polymer (2008) (2)
- Strong Screening Effect of Photo-Generated Carriers on Piezoelectric Field in In_ Ga_ N/In_ Ga_ N Quantum Wells : Electnical Properties of Condensed Malter (2002) (2)
- Determination of the direction of piezoelectric field in InGaN/GaN multiple quantum-well structures grown by metal-organic chemical vapor deposition (2004) (2)
- Conformational analysis of trimethylsilyl-substituted trans-stilbenes: modeling of torsions in silicon-containing poly(para-phenylenevinylene) (1999) (2)
- Electroluminescence in plasmonic actuator based on Au/SiO2/n-Si tunnel junction (2021) (2)
- A Study on Morphology Control of ZnO Electrodeposited on Au Surface (2009) (2)
- Coupling of surface plasmon with InGaAs/GaAs quantum well emission by gold nanodisk arrays. (2013) (2)
- Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K (1999) (2)
- Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding (2018) (1)
- Electrical Properties and UV Response of Single ZnO Nanorod (2007) (1)
- Embedding nano-pillar arrays into InGaN light-emitting diodes (2014) (1)
- Uniform void-free epitaxial CoSi2 formation on STI bounded narrow Si(100) lines by template layer stress reduction (2004) (1)
- Development of compact continuous-wave terahertz (THz) sources by photoconductive mixing (2012) (1)
- Performance of silicon solar cells under filtered spectra and different light intensities (2017) (1)
- Addressing materials and process-integration issues of NiSi silicide process using impurity engineering (2004) (1)
- High bonding yield and brighter integrated GaN LED and Si-CMOS (2019) (1)
- High Areal Density and Broadband Emission from InAs Quantum Dots for Superluminescent Diodes (2007) (1)
- The Sub-micron GaN HEMT Device on 200mm Si(111) Wafer with Low Wafer Bow (2018) (1)
- Normal Incidence Intersubband Absorption in GaN/AlN Superlattices Grown on Facet-Controlled Epitaxial Lateral Overgrown GaN/Sapphire Templates (2007) (1)
- Transition of 3D to 2D growth modes of InAs grown on GaAs (2006) (1)
- Small-area p-type PERC Silicon Solar Cells for Tandem Applications (2018) (1)
- A 3x2 waveguide switch based on SiGe for C-band operation (2004) (1)
- Growth of InGaAs-channel transistor layers on large-scale Si wafers for HeteroIntegration with Si CMOS (2017) (1)
- Introduction to optical switches (2010) (1)
- Nanopatterning and selective area epitaxy of GaN on Si substrate (2008) (1)
- Outgoing Multiphonon Resonant Raman Scattering in Be‐ and C‐Implanted GaN (2001) (1)
- Carrier dynamics in self-assembled InAs quantum dots (2001) (1)
- Blocking Impurities in Organic Light Emitting Device by Inserting Parylene Interlayer (2005) (1)
- Channeling contrast microscopy of GaN and InGaN thin films (1999) (1)
- 2D ordered arrays of nanopatterns fabricated by using colloidal crystals as templates (2012) (1)
- Metalorganic chemical vapor deposition and spontaneous emission of self-assembled InAs quantum dots in open space and in a planar microcavity (2004) (1)
- Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching (2006) (1)
- Photoluminescence: Ultrafast and Robust UV Luminescence from Cu‐Doped ZnO Nanowires Mediated by Plasmonic Hot Electrons (Advanced Optical Materials 6/2016) (2016) (1)
- Current and resistivity dependence of electromigration from a statistical analysis of metallization failure data (1981) (1)
- Comparative Investigation of Photoluminescence of In- and Si- doped GaN/AlGaN Multi-Quantum Wells (2002) (1)
- GaN LED on Quartz Substrate through Wafer Bonding and Layer Transfer Processes (2018) (1)
- High Brightness GaN LEDs with Engineered Sapphire Substrate (2007) (1)
- Sensitivity analysis for III–V/Si tandem solar cells: A theoretical study (2017) (1)
- Micro-raman scattering and micro-photoluminescence on GaN materials grown on sapphire by metalorganic chemical vapor deposition (2000) (1)
- Optically triggered light sources with interdigitated contact semiconductor lasers (1995) (1)
- Electroluminescence model of bipolar resonant tunnelling diode (1994) (1)
- Metalorganic vapor phase epitaxy growth of AlGaInAs quantum dots on (1 0 0) GaAs substrate (2004) (1)
- Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case (1996) (1)
- Correspondance: Lateral current spreading in stripe-contact semiconductor lasers (1983) (1)
- Greatly enhanced continuous-wave terahertz emission by nano-electrodes in a photoconductive photomixer (2012) (1)
- Effect of Morphological and Structural Properties on SIMS Depth Profiles of InGaN/GaN Multiple Quantum Wells Grown on Sapphire by MOCVD (2015) (1)
- Design and Optimization of GaN-based Semiconductor Saturable Absorber Mirror Operating at Around 415 nm (2006) (1)
- Elimination of mode grouping in InGaAsP /InP ridge waveguide laser using quantum-well intermixing (2006) (1)
- Correlated Band-Edge Emissions of ZnO Nanorods and GaN Underlying Substrate (2009) (1)
- Growth of InAs quantum dots on shallow spherically shaped craters prepared on GaAs (0 0 1) substrates: an extended set of vicinal surfaces (2004) (1)
- Stimulated emission from free-standing GaN/Si micro-disk structures (2007) (1)
- Comparison of current spreading in stripe contact semiconductor lasers (1986) (1)
- Vertically Aligned Single Crystalline ZnO Nanorods Grown by Hydrothermal Synthesis and the Theoretical Model for Predicting the Rod Density (2006) (1)
- Photoluminescence and Time-Resolved Photoluminescence Studies of Self-Assembled InAs Quantum Dots (2002) (1)
- Selective epitaxial growth of nanomesh InGaN MQWs on nanopore arrays of GaN substrate (2011) (1)
- Growth and Characteristics of ZnO Nanotube Arrays on Si Substrate by Atomic Layer Deposition in Anodic Aluminum Oxide (2008) (1)
- Impact ionizing electroluminescence of a double barrier structure (1994) (1)
- Effect of growth temperature on the thermal stability of 1.3μm InAs/InGaAs/GaAs quantum dot structures (2008) (1)
- Nanostructuring of InP surface by low-energy ion beam irradiation. (2007) (1)
- Design, fabrication, and characterization of photonic devices : 30 November-3 December 1999, Singapore (1999) (1)
- Improvement of self-organized InAs quantum dots growth by molecular beam epitaxy (2005) (1)
- Analysis and design of AlGaInP single-quantum-well LED (1999) (1)
- Identification of deep levels in π-GaN epilayers (2001) (1)
- CAPACITANCE PROPERTY OF A RESONANT TUNNELING DIODE (1993) (1)
- P‐type doping in GaN through Be implantation (2005) (1)
- Voltage tunable wavelength LEDs (2008) (1)
- Fabrication of a $\hbox{TiN}_{x}/\hbox{Ni/Au}$ Contact on ZnO Films With High Thermal Stability and Low Resistance (2011) (1)
- Impact of V/III flux ratio and Si-doping concentration on GaN grown by metalorganic chemical-vapor deposition on sapphire substrate (2002) (1)
- Effect of Ge-rich Si1−zGez Segregation on the Morphological Stability of NiSi1−uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer (2004) (1)
- Disk-to-Pyramidal GaAs Islands Shape Evolution on Nanodisks-Patterned Substrate (2008) (1)
- Plasmon-induced hot electrons emission enhanced by Fabry–Perot cavity resonance on SOI (2020) (1)
- GaN Based Nanomaterials Fabrication with Anodic Aluminium Oxide by MOCVD (2003) (1)
- Indium Incorporation Coefficients in the Growth of AlInGaAs/Al0.3Ga0.7As Quantum Wells by Molecular Beam Epitaxy (1998) (1)
- Plasmonic-enhanced light emission from a waveguide-integrated tunnel junction (2020) (1)
- Retraction: “Growth of single crystal ZnO nanorods on GaN using an aqueous solution method” [Appl. Phys. Lett. 87, 101908 (2005)] (2010) (1)
- High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD (2005) (1)
- Non-dispersive hole transport in a novel trifluoromethylbiphenylyl substituted PPV derivative (2006) (1)
- The Effect of Periodic Silane Burst on the Properties of GaN on Si (111) Substrates (2004) (1)
- Nitrogen Interstitial Defects in GaNAs Films Grown by MOCVD (2007) (1)
- Effects of temperature and LT-ZnO template on structural and optical properties of thermal-evaporation deposited ZnO submicron crystals (2012) (1)
- Electrical engineering education relevant to industrial needs: Singapore experience (1995) (1)
- Thermal Studies on Stress-Induced Void-Like Defects in Epitaxial-CoSi 2 Formation (1999) (1)
- Effects of polarization field on formation of two-dimensional electron gas in (0 0 0 1) and (1 1 2̄ 0) plane AlGaN/GaN heterostructures (2004) (1)
- Effect of V/III ratio on extended defects in InGaAlP measured by isothermal DLTS (2001) (0)
- Plasmonic interconnects for global wires in integrated circuits (2020) (0)
- Correlation of film thickness and deposition temperature with PAI and the scalability of Ti-salicide technology to sub-0.18 /spl mu/m regime (1998) (0)
- MOCVD growth long wavelength InGaAs QW (QDs) and GaInNAs QW on the GaAs substrate by using of TBAs and uDMHy sources (2000) (0)
- Optical properties and material studies of InGaN/GaN multi-quantum well light emitting diode wafers with different structures (2009) (0)
- Structural and optical properties of GaN materials grown on Si by metalorganic chemical vapor deposition (1999) (0)
- Raman Scattering and Photoluminescence of Mg‐Implanted GaN Films (2001) (0)
- Design of Metal-Semiconductor-Metal Ultra-Violet Detector on Gallium Nitride (2001) (0)
- Enhanced optical emission from GaN film grown on composite intermediate layers (1999) (0)
- Theoretical comparison of 0.78% tensile strained InGaAs/InAlGaAs and InGaAs/InGaAsP quantum well lasers emitting at 1.55 μm (1999) (0)
- Growth and characterization of GaN epilayer grown on on-axis Si (100) substrate by metalorganic chemical vapor deposition (2015) (0)
- Bloc de protection (2002) (0)
- Low Frequency Noise Correlation between Electrical and Optical signals for predicting Degradation in Organic Light Emitting Diodes (2009) (0)
- Numerical modeling of axial junction compositionally graded InxGa1−xN nanorod solar cells (2012) (0)
- Orders of Magnitude Reduction in Threading Dislocations in ZnO Grown on Facet-Controlled GaN (2006) (0)
- Erratum: Extended Drude Model for Intraband-Transition-Induced Optical Nonlinearity [Phys. Rev. Applied 11, 064062 (2019)] (2020) (0)
- Single-lobe operation of a submicron-ridge laser arrays (2008) (0)
- Improved carrier transport in intermixed GaAs/AlGaAs laser structure with multi-quantum wells cladding (2000) (0)
- GROWTH OF COMPRESSIVE STRAINED IN GAAS/GAAS MULTIPLE QUANTUM WELL STRUCTURES BY MBE (1997) (0)
- Multiwavelength lasers fabricated by a novel impurity-free quantum-well intermixing technology (1999) (0)
- Characterization of High Quality Continuous GaN Films Grown on Si-Doped Cracked GaN Template (2003) (0)
- Microscopic Probing of Raman Scattering and Photoluminescence on C-Al Ion Co-Implanted 6H-SiC (2000) (0)
- Theoretical Investigations of Delta-Doped Interband Resonant Tunneling Diode (1993) (0)
- Suppression of NiSi-to-NiSi 2 Transition Using Very Short-time RTA Silicidation (2002) (0)
- Nonlinear absorption in n-i-p-i MQWs structure (1994) (0)
- 1/f noise analysis of ZnO nanowire and thin film (2008) (0)
- Distributed Feedback Laser Using Buried Dielectric Grating (2007) (0)
- Improved OLED encapsulation (2002) (0)
- Electroluminescence properties of bipolar resonant tunneling diode (1994) (0)
- Temperature quenching of tunable tunneling recombination emission in AlxGa1−xAs n-i-p-i doping structures (1997) (0)
- Optical Properties of Zinc Oxide Quantum Dots Embedded Films by Metal Organic Chemical Vapor Deposition (2005) (0)
- Theoretical design of low-threshold current density of InAlGaAs material system (2000) (0)
- GaAs Heteroepitaxy on SiGe-on-Insulator Using Ge Condensation and Migration Enhanced Epitaxy (2007) (0)
- The Formation of In-Rich Regions at the Perphery of the Inverted Hexahonal Pits of Ingan Thin-Films Grown by Metalorganic Vapor Phase Epitaxy (1999) (0)
- Luminescence, morphology, and x-ray diffraction features of InGaN materials grown on sapphire by metalorganic chemical vapor deposition (1999) (0)
- 3x2 integrated microphotonic switches (2005) (0)
- Enhancement in Indium Incorporation for InGaN Grown on InN Intermediate Layer (2006) (0)
- Effect of argon or nitrogen preamorphized implant on SALICIDE formation for deep submicron CMOS technology (1997) (0)
- Stable broad near-field (single-lateral mode) semiconductor laser (1991) (0)
- Highly efficient luminescence in partially ordered GaInP2 (2001) (0)
- Etching of GaN using Inductively Coupled Plasma (2000) (0)
- Two-mode interference photonic switch for WDM communications (2002) (0)
- The design of a twin‐rib waveguide optical switch by the discrete spectral index method (1998) (0)
- Conditions for operation of semiconductor laser with negative light/current characteristic (1981) (0)
- Absorption recovery time reduction in InGaN/GaN quantum well saturable absorbers (2008) (0)
- Integration of SALICIDE process for deep-submicron CMOS technology : effect of nitrogen/argon-amorphized implant on SALICIDE formation (1998) (0)
- The Near-Diffraction-Limited Operation of Positive Index-Guided Submicrometer-Ridge Laser Arrays (2009) (0)
- Tuning Plasmonic Resonance Wavelength by Ordered Silver Hole Arrays on Si and SiO2 (2012) (0)
- Novel 2D ordered arrays of nanostructures fabricated through silica masks formed by bilayer colloidal crystals as templates (2005) (0)
- Erratum: “Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a “nucleation-augmented” method” [Appl. Phys. Lett. 85, 567 (2004)] (2005) (0)
- Response to “Comment on ‘Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system’” [Appl. Phys. Lett. 106, 176101 (2015)] (2015) (0)
- Phosphor vacancy induced quantum well intermixing and its application in DBR laser using SiO2grating (2005) (0)
- Continuous wave Terahertz photomixer from low temperature grown GaAs with high carrier mobility (2010) (0)
- Application of nitride-based semiconductor materials to high-speed optoelectronics (2014) (0)
- Minority Carrier Lifetime Measurement Based on Low Frequency Fluctuation (2009) (0)
- Optical pumping and time-resolved photoluminescence studies of phenyl-substituted-PPV derivatives (2003) (0)
- Efficiency Measurements for 4-Terminal Perovskite/Silicon Tandem Solar Cells (2020) (0)
- DLTS characterisation of InGaAlP films grown using different V/III ratios (2001) (0)
- Influence of substrate orientation on photoluminescence in InGaN/GaN multiple quantum wells (2001) (0)
- InNxAs1-x band gap energy and band bowing coefficient calculation (2007) (0)
- Comparative investigation of high-resolution transmission electron microscopy and Fourier transform infrared spectroscopy for GaN films on sapphire substrate (1999) (0)
- Simulation of inhomogeneous broadening and mode-beating effects in semiconductor lasers (1988) (0)
- Broad area side emission LED for high power application (2010) (0)
- Two-section tunable laser using impurity free intermixing in InGaAsP multiple quantum well structures (2001) (0)
- High brightness and bonding yield of integrated Si-CMOS and GaN LED wafers (2019) (0)
- Interface roughness effects on the currents of resonant tunnelling hot electron transistor (1994) (0)
- ZnO Nanostructures and Thin Films Grown in Aqueous Solution: Growth, Defects, and Doping (2012) (0)
- Deep Level Traps in GaN Epilayer and LED (2017) (0)
- Metalorganic Chemical Vapour Deposition (MOCVD) Growth of GaN on Foundry Compatible 200 mm Si (2017) (0)
- Self-organised growth and characterisation of InAs, InGaAs and InAlAs quantum dots (1998) (0)
- Characteristics of Pt/Schottky Diode s fabricated on the Cracked GaN Epitaxial Layer on (111) Silicon (2004) (0)
- Comparative Study of Optical Properties of Nanoporous GaN Prepared by UV-Assisted Electrochemical and Electroless Etching (2006) (0)
- Inside Front Cover: Line Defects Embedded in Three‐Dimensional Photonic Crystals (Adv. Mater. 15/2005) (2005) (0)
- Heavily silicon doped lattice matched InGaAIAs/lnP epilayers grown by molecular beam epitaxy (1995) (0)
- ACCEPTOR-RELATED RADIATIVE RECOMBINATION OF QUASI-TWO-DIMENSIONAL ELECTRONS IN MODULATION-DOPED GaAs/AlxGa1−xAs HETEROJUNCTIONS (1996) (0)
- Optical investigations of multi-dimensional ZnO hybrid structures (2009) (0)
- Optoelectronics research — centre for optoelectronics (COE) (1994) (0)
- Photoluminescence Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes by Metalorganic Chemical Vapor Deposition (2011) (0)
- InAs SELF-ORGANIZED QUANTUM DOTS GROWN BY MOLECULAR BEAM EPITAXY USING A "NUCLEATION-AUGMENTED" METHOD (2005) (0)
- The Growth of Low Wafer Bow AlGaN / GaN Structure on 200 mm Si ( 111 ) (2015) (0)
- SiGeC Near Infrared Photodetectors (2002) (0)
- Study of the Ta substitutionality in pulsed laser deposited Ta doped TiO$_{2}$ films by Rutherford backscattering-ion channeling spectroscopy (2010) (0)
- A classification scheme for the light-current (L/I) characteristics of a two photon mode semiconductor laser (1983) (0)
- Annihilation of Threading Dislocations in Regrown GaN on Electrochemically Etched Nanoporous GaN Template with Optimization of Buffer Layer Growth (2007) (0)
- Self-aligned AlInAs native oxidized buried hetero-structure InGaAsP/InP distributed feedback laser with circular beam and high T/sub 0/ potential (2000) (0)
- Limitation to high-bit-rate modulation of semiconductor lasers caused by dynamic changes of Fermi level and optical loss (1984) (0)
- Interplay of Defects, Microstructures, and Surface Stoichiometry during Plasma Processing of GaN (2002) (0)
- Growth and characterization of crack-free GaN films grown on cracked Si-doped GaN templates (2001) (0)
- Fabrication and Optical Properties of ZnO Quantum Dots (2007) (0)
- Defect Characterization of High-Rate Deposited Hydrogenated Amorphous Silicon Films (1996) (0)
- Wafer-Scale, Highly-Ordered Silicon Nanowires Produced by Step-and-Flash Imprint Lithography and Metal-Assisted Chemical Etching (2013) (0)
- Growth of ZnO Nanorods on GaN Using Aqueous Solution Method (2005) (0)
- MOCVD Behaviors of Two-Sized InGaAs Ordered Nano-Bar Arrays Grown Selectively on a GaAs Substrate (2007) (0)
- Analysis of GaN Grown on Vertically Standing Fractal-Like Si Nanostructures (2012) (0)
- Longitudinal optical phonon-plasmon-coupled modes in epitaxial GaN films on sapphire substrate (2000) (0)
- Enhancement of electroluminescence properties in delta-doped quantum well of bipolar resonant tunneling diode (1994) (0)
- Fabrication and I-V Characterization of ZnO Nanorod Based Metal-Insulator-Semiconductor Junction (2006) (0)
- Epitaxial Lift-Off of GaN Films (2014) (0)
- Characterization of ZnO Nanorods Grown on GaN Using Aqueous Solution Method (2005) (0)
- 248 nm excimer-laser-induced native oxide film formation on GaN surface (2004) (0)
- Self-organized growth of InP on GaAs substrate by MOCVD (2000) (0)
- Hexagonally-closed-packed micro-light-emitting diodes (2006) (0)
- Micro-Raman scattering and microphotoluminescence on GaN materials grown on sapphire by metalorganic vapor deposition (2000) (0)
- Probing the formation of two-dimensional electron gas in AlInGaN/ GaN heterostructures by photoluminescence spectroscopy (2004) (0)
- Raman scattering spectra in C-implanted GaN epilayers (2001) (0)
- Aging effect on balance of carrier injection in polymer light-emitting diodes (2001) (0)
- Improved method for sealing for oleds (2002) (0)
- Distribution of modulated power among longitudinal modes of a semiconductor laser (1984) (0)
- Coupling of Surface Plasmon with GaAs/AlGaAs Quantum Well Emission by Gold Nanoparticle Arrays (2012) (0)
- Luminescence and vibrational properties of erbium-implanted nanoporous GaN (2008) (0)
- A Kinetic Model for the Strain Relaxation in Heteroepitaxial Thin Film Systems (2001) (0)
- Plastic Relaxation In Single InᵡGa₁âᵡN/GaN Epilayers Grown On Sapphire (2004) (0)
- Regrowth of GaN on Strain-relief porous GaN template fabricated by Anodized Alumina Oxide mask (2017) (0)
- Enhancement of GaAs/InGaAs quantum well emission by disordered gold nanoparticle arrays (2013) (0)
- Laminates for encapsulation of OLED-devices (1999) (0)
- High Density Single Crystalline GaN Nanodot Arrays Fabricated Using Template-Assisted Selective Growth (2005) (0)
- Impurity-free vacancy disordering of quantum wells for fabrication of multiple wavelength laser arrays (1998) (0)
- A dual-character InGaN/GaN multiple quantum well device for electroluminescence and photovoltaic absorption of near-mutually exclusive wavelengths (2014) (0)
- Sub-wavelength nano-electrode structures to improve the performance of terahertz photomixers (2016) (0)
- P‐49: Dependence of Dark Spot Growth on Electrical Stressing Voltage in OLED Devices (2001) (0)
- First-principles calculations of GaAs 1 − x P x –Al 0 : 3 Ga 0 : 7 As . 001 / band offsets (1998) (0)
- Fabrication of Periodic Sub-100nm Patterns in SiO2 Template by Electron-beam Lithography (2006) (0)
- Improved, transparent electrode material to increase the quality of organic light emitting diodes (1999) (0)
- Continuous wave Terahertz generation from photomixer with single walled carbon nanotubes film (2013) (0)
- Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers (2007) (0)
- A method for producing an organic device (2002) (0)
- Laser Fabrication by Using Photonic Crystal (2003) (0)
- Beam steering with a Y-integrated cavity semiconductor laser (1995) (0)
- Observation of compensation in GaN films grown by metalorganic chemical vapor deposition (2001) (0)
- GaN Room Temperature exciton Spectra by Photovoltaic Measurement (1997) (0)
- Fabrication of Tunable Duty Cycle Metal Wire Nanograting by Oblique Sputtering (2008) (0)
- Investigation of transmission of Au films with nanohole arrays created by nanosphere lithography (2012) (0)
- The Growth of AlGaN/GaN Structure on 200mm Si(111) with Low Wafer Bow (2014) (0)
- New hole negative differential resistance strained-layer device (1995) (0)
- Optical and transport properties of MOCVD-grown InSb thin films (2000) (0)
- Raman spectroscopic studies of Ti$_{1-x}$Ta$_{x}$O$_{2}$ alloy thin films (2012) (0)
- Growth of crack-free GaN on AlN quantum dots on Si(111)substrates by MOCVD (2003) (0)
- 2 MeV proton channeling contrast microscopy of LEO GaN thin film structures (2003) (0)
- Publisher’s Note: “Correlation of a generation-recombination center with a deep level trap in GaN” [Appl. Phys. Lett. 106, 102101 (2015)] (2015) (0)
- Channeling contrast microscopy of epitaxial lateral overgrowth of ZnO/GaN films (2007) (0)
- Proposing and modelling of a new unipolar transistor (1994) (0)
- Retraction noticeRetraction notice to “Comparative investigation of photoluminescence of In- and Si-doped GaN/A1GaN multi-quantum wells” [Mater. Sci. Eng. B (2003) 196–199] (2011) (0)
- Energy yield evaluation for field operation of solar cells in Singapore: GaAs/GaAs tandem vs. GaAs single-junction solar cells (2017) (0)
- Yellow Luminescence Imaging Of Epitaxial Lateral Overgrown GaN Using Ionoluminescence (2002) (0)
- Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epilayers Grown on sapphire (2002) (0)
- Optically induced blueshift of photoluminescence excitation spectrum in n–i–p–i multiple quantum well structures (2002) (0)
- Large enhancement in photoluminescence of ZnO grown on strain relaxed nanoporous GaN template by pulsed laser deposition (2014) (0)
- INVESTIGATION OF QUANTUM TRANSMISSION EFFECT ON PROPERTY OF PLANAR-DOPED BARRIER DIODE (1993) (0)
- Temperature dependent exciton radiative lifetime in ZnO nanorods (2007) (0)
- Suppression of thermal convection and its effect on growth of GaN in metal organic vapor phase epitaxy (1998) (0)
- LETTER TO THE EDITOR: First-principles calculations of band offsets of ? heterostructures (1997) (0)
- Electro-optical switching in SiGe/Si waveguide devices (2004) (0)
- Interface roughness effects on the properties of resonant tunneling hot electron transistor (1994) (0)
- Visible Light Emission from Ordered Nanopatterned InP Surface (2007) (0)
- Micro Raman Spectroscopy of Annealed Erbium Implanted GaN (2004) (0)
- Investigation on femtosecond pulse laser processing of sapphire (2004) (0)
- Effects of the polarization fields on the responsivity of the AlN/GaN photodetectors (2005) (0)
- Optically pumped InxGa₁âxN/InyGa₁âyN multiple quantum well vertical cavity surface emitting laser operating at room temperature. (2004) (0)
- Fabrication and characterization of GaN nanopillar arrays (2004) (0)
- Determination of milk content by a laser light scattering technique (2023) (0)
- Near-field scanning photoluminescence microscopy of InGaN/GaN quantum structures (2004) (0)
- STUDY ON PL ENHANCEMENT OF InGaAs/GaAs QUANTUM WELL EMISSION BY GOLD NANOPARTICLE ARRAYS (2014) (0)
- Improvements of Structural and Optical Properties of GaN/Al0.10Ga0.9N Multi-Quantum Wells by Isoelectronic In-doping (2001) (0)
- The Morphology Control and Defect Study of Electrodeposited ZnO Nanostructures (2009) (0)
- Stratifies pour encapsulation de dispositifs du type oled (1999) (0)
- Low threshold current density and high-quantum-efficiency 980-nm cw QW laser (2000) (0)
- Effects of rapid thermal annealing on the intersubband energy spacing of self-assembled InAs/GaAs quantum dots (1999) (0)
- GaN Nanopore Arrays: Fabrication and Characterization (2004) (0)
- Novel Passivation Method in the Fabrication of Submicron InGaAsP/InP Ridge Waveguide Lasers (2007) (0)
- Enhancement of Erbium Incorporation with Implantation into Nanoporous GaN (2008) (0)
- Design, fabrication, and characterization of photonic devices : 27-30 November 2001, Singapore (2001) (0)
- Stratifies pour dispositifs d'encapsulation (1999) (0)
- Enhancement of GaAs/InGaAs quantum well emission by disordered gold nanoparticle arrays (2014) (0)
This paper list is powered by the following services:
What Schools Are Affiliated With Soo Jin Prof. Chua?
Soo Jin Prof. Chua is affiliated with the following schools:
