Srabanti Chowdhury
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American computer scientist
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Computer Science
Srabanti Chowdhury's Degrees
- PhD Computer Science Stanford University
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Why Is Srabanti Chowdhury Influential?
(Suggest an Edit or Addition)According to Wikipedia, Srabanti Chowdhury is an Indian American Electrical Engineer who is an associate professor of electrical engineering at Stanford University. She is a senior fellow of the Precourt Institute for Energy. At Stanford she works on ultra-wide and wide-bandgap semiconductors and device engineering for energy-efficient electronic devices. She serves as Director for Science Collaborations at the United States Department of Energy Energy Frontier Research Center ULTRA.
Srabanti Chowdhury's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure (2013) (142)
- CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion (2012) (138)
- Current status and scope of gallium nitride-based vertical transistors for high-power electronics application (2013) (121)
- Enhancement and Depletion Mode AlGaN/GaN CAVET With Mg-Ion-Implanted GaN as Current Blocking Layer (2008) (119)
- Distribution of donor states on etched surface of AlGaN/GaN heterostructures (2010) (73)
- Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction (2015) (71)
- Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures (2010) (66)
- Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions (2010) (65)
- Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer (2017) (65)
- Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices (2017) (47)
- Analysis of the reverse I-V characteristics of diamond-based PIN diodes (2017) (43)
- Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures (2019) (39)
- Design of 1.2 kV Power Switches With Low $R_{\mathrm{{\scriptscriptstyle ON}}}$ Using GaN-Based Vertical JFET (2015) (36)
- Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) (2018) (35)
- 880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates (2018) (33)
- Design and fabrication of a 1.2 kV GaN‐based MOS vertical transistor for single chip normally off operation (2016) (32)
- Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer (2017) (32)
- Dynamic Modeling and Power Loss Analysis of High-Frequency Power Switches Based on GaN CAVET (2016) (29)
- A 4.5 μm PIN diamond diode for detecting slow neutrons (2018) (27)
- High Voltage Diodes in Diamond Using (100)- and (111)- Substrates (2017) (26)
- Gallium nitride based power switches for next generation of power conversion (2015) (26)
- Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process (2017) (25)
- Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation (2018) (25)
- Development of Polycrystalline Diamond Compatible with the Latest N-Polar GaN mm-Wave Technology (2021) (20)
- Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling. (2021) (17)
- Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch (2018) (17)
- An Investigation of Electrical and Dielectric Parameters of Sol–Gel Process Enabled $\beta $ -Ga2O3 as a Gate Dielectric Material (2017) (17)
- Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I (2021) (16)
- Demonstration of Diamond-Based Schottky p-i-n Diode With Blocking Voltage > 500 V (2016) (15)
- Temperature dependent simulation of diamond depleted Schottky PIN diodes (2016) (15)
- Polycrystalline diamond growth on β-Ga2O3 for thermal management (2021) (14)
- 60 A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525 K (2020) (14)
- A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices (2021) (14)
- AlGaN/GaN CAVETs for high power switching application (2010) (12)
- Design and Fabrication of Ion-Implanted Moat Etch Termination Resulting in 0.7 m $\Omega\cdot$ cm2/1500 V GaN Diodes (2020) (12)
- A Study on the Growth Window of Polycrystalline Diamond on Si3N4-coated N-Polar GaN (2019) (12)
- On impact ionization and avalanche in gallium nitride (2020) (12)
- Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part II (2021) (12)
- Use of Sub-nanometer Thick AlN to Arrest Diffusion of Ion-Implanted Mg into Regrown AlGaN/GaN Layers (2011) (12)
- First report of scaling a normally-off in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET) (2017) (11)
- Al2O3 dielectric layers on H-terminated diamond: Controlling surface conductivity (2017) (11)
- Temperature Dependence and High-Temperature Stability of the Annealed Ni/Au Ohmic Contact to p-Type GaN in Air (2016) (10)
- A Study on the Impact of Channel Mobility on Switching Performance of Vertical GaN MOSFETs (2018) (10)
- Analysis of mobility-limiting mechanisms of the two-dimensional hole gas on hydrogen-terminated diamond (2020) (10)
- Determination of Minority Carrier Lifetime of Holes in Diamond p-i-n Diodes Using Reverse Recovery Method (2018) (10)
- The Doping Dependence of the Thermal Conductivity of Bulk Gallium Nitride Substrates (2020) (10)
- A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor (2019) (9)
- Designing Beveled Edge Termination in GaN Vertical p-i-n Diode-Bevel Angle, Doping, and Passivation (2020) (9)
- Switching performance analysis of GaN OG-FET using TCAD device-circuit-integrated model (2018) (9)
- Diamond-Incorporated Flip-Chip Integration for Thermal Management of GaN and Ultra-Wide Bandgap RF Power Amplifiers (2021) (8)
- A discussion on the DC and switching performance of a gallium nitride CAVET for 1.2kV application (2015) (8)
- Neutralizing the polarization effect of diamond diode detectors using periodic forward bias pulses (2019) (7)
- Design of Ka-Band Doherty Power Amplifier Using 0.15μmd GaN on SiC Process Based on Novel Complex Load Modulation (2021) (7)
- Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs (2017) (7)
- A study on the nucleation and MPCVD growth of thin, dense, and contiguous nanocrystalline diamond films on bare and Si3N4-coated N-polar GaN (2019) (7)
- GaN Power Devices - Current Status and Future Directions (2018) (6)
- Basic Research Needs for Microelectronics: Report of the Office of Science Workshop on Basic Research Needs for Microelectronics, October 23 – 25, 2018 (2018) (6)
- Growth and characterization of N‐polar GaN and AlGaN/GaN HEMTs on (111) silicon (2011) (6)
- GaN-on-GaN power device design and fabrication (2019) (6)
- Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K (2020) (6)
- Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces (2018) (5)
- Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub‐Micrometer Fin Width (2018) (5)
- 2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer (2022) (5)
- Study on Avalanche Uniformity in 1.2KV GaN Vertical PIN Diode with Bevel Edge-Termination (2021) (4)
- Low ON-resistance and high current GaN Vertical Electron Transistors with buried p-GaN layers (2014) (4)
- Vertical Gallium Nitride Technology (2017) (4)
- Vertical Ga2O3 MOSFET With Magnesium Diffused Current Blocking Layer (2022) (3)
- Demonstration of GaN Impact Ionization Avalanche Transit-Time (IMPATT) Diode (2020) (3)
- Experimental Determination of Velocity-Field Characteristic of Holes in GaN (2020) (3)
- A study of temperature dependent current–voltage (I–V–T) characteristics in Ni/sol–gel β-Ga2O3/n-GaN structure (2018) (3)
- Electro-Thermal Investigation of GaN Vertical Trench MOSFETs (2021) (3)
- Demonstration of Monolithic Polycrystalline Diamond-GaN Complementary FET Technology for High-Temperature Applications (2021) (2)
- Dispersion-free AlGaN/GaN CAVET with low Ron achieved with plasma MBE regrown channel with Mg-ion-implanted current blocking layer (2010) (2)
- Experimental Determination of Hole Impact Ionization Coefficient and Saturation Velocity in GaN (2019) (2)
- A Study on the Impact of Dislocation Density on Leakage Current in Vertical GaN-on-GaN p-n Diodes (2022) (2)
- Discrete-Pulsed Current Time Method to Estimate Channel Thermal Resistance of GaN-Based Power Devices (2018) (2)
- On the Progress Made in GaN Vertical Device Technology (2019) (2)
- The Role of the Base Stack on the AC Performance of GaN Hot Electron Transistor (2015) (2)
- On-Wafer Investigation of Avalanche Robustness in 1.3 kV GaN-on-GaN P-N Diode Under Unclamped Inductive Switching Stress (2021) (2)
- A study of the effect of surface pretreatment on atomic layer deposited Al2O3 interface with GaN (2017) (2)
- Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination Optimization (2022) (2)
- Potential of GaN vertical JFETs presented through a comprehensive discussion of dynamic performance compared to SiC JFETs (2016) (2)
- Movement of Current Filaments and its Impact on Avalanche Robustness in Vertical GaN P-N diode Under UIS stress (2022) (1)
- Future Power Electronics with GaN and Diamond (2015) (1)
- Current Transient Spectroscopic Study of Vacancy Complexes in Diamond Schottky p-i-n Diode (2022) (1)
- Demonstration of Low ON-Resistance CAVETS with Ammonia MBE Grown Active p-GaN Layer as the Current Blocking Layer for High Power Applications (2012) (1)
- Nanoporous GaN on p-type GaN: a Mg out-diffusion compensation layer for heavily Mg-doped p-type GaN (2022) (1)
- Low Thermal Budget Growth of Near‐Isotropic Diamond Grains for Heat Spreading in Semiconductor Devices (2022) (1)
- Design and Manufacture of Edge Termination in Vertical GaN Diodes: Electric Field Distribution Probed by Second Harmonic Generation (2022) (1)
- Best Practices to Quantify Linearity Performance of GaN HEMTs for Power Amplifier Applications (2021) (1)
- Vertical GaN Transistors for Power Electronics (2018) (1)
- Ga2O3 as Both Gate Dielectric and Surface Passivation via Sol-Gel Method at Room Ambient (2016) (1)
- Oxidation Behavior of InAlN during Rapid Thermal Annealing (2021) (1)
- Characterization of β-Ga2O3 interface and conduction band offset with GaN using a Sol-gel process of deposition (2017) (1)
- Robust avalanche in GaN leading to record performance in avalanche photodiode (2020) (1)
- Integration of Polycrystalline diamond on top of GaN and Ga2O3 devices for thermal management (2021) (1)
- A systematic study of the regrown interface impurities in unintentionally doped Ga-polar c-plane GaN and methods to reduce the same (2022) (1)
- Diamond Integration on GaN for Channel Temperature Reduction (2021) (1)
- A study on sub-bandgap photoexcitation in nitrogen- and boron-doped diamond with interdigitated device structure (2022) (1)
- On uniform avalanche in III-nitrides and its application (2023) (0)
- High Current Density Trench CAVET on Bulk GaN Substrates with Low-Temperature GaN Suppressing Mg Diffusion (2023) (0)
- Scaling Study on High-Current Density Low-Dispersion GaN Vertical FinFETs (2023) (0)
- Interface Control of III-Oxide/Nitride Composite Structures (2012) (0)
- Recent achievements and pending challenges in Gallium Nitride vertical device development (2017) (0)
- Momentum Space Engineering of GaN HETs for RF Applications Through Full-Band Monte Carlo Simulations (2017) (0)
- On the Scope of GaN-Based Avalanche Photodiodes for Various Ultraviolet-Based Applications (2022) (0)
- (Invited) Role of GaN-Based Devices in Medium and High Power Conversion (2015) (0)
- (Invited) A Discussion on the Latest Performance of Gan–Based Vertical Devices and the Paths Forward (2017) (0)
- Emission control of multilayered thin films of ZnO/CuO prepared by pulsed laser deposition (Conference Presentation) (2017) (0)
- Hydrogen-terminated diamond FET and GaN HEMT delivering CMOS inverter operation at high-temperature (2020) (0)
- Current Scaling in Single and Multiple Fin Static Induction Transistors with Sub-Micron Fin Width (2019) (0)
- A study of temperature dependent current-voltage (I-V-T) characteristics in Ni/(-201) β-Ga2O3 Schottky diode (Conference Presentation) (2018) (0)
- On ultra-wide-bandgap semiconductors, but particularly diamond (2021) (0)
- Development of High-Voltage Vertical GaN PN Diodes (2020) (0)
- GaN based Electronics II (2015) (0)
- Power Conversion and the Role of GaN (2017) (0)
- Electronic states of plasma-enhanced atomic layer deposited SiO2 on GaN (2015) (0)
- A Study on the First‐Derivative Output Properties of GaN Static Induction Transistor with Submicrometer Fin Width (2019) (0)
- Compound Semiconductors (2023) (0)
- Impact of Diamond Passivation on fT and fmax of mm-wave N-Polar GaN HEMTs (2022) (0)
- Wide Bandgap Power Devices and Applications II (2017) (0)
- Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs) (2019) (0)
- Linearity Performance of Derivative Superposition in GaN HEMTs: A Device-to-Circuit Perspective (2023) (0)
- Future Directions Workshop: Materials, Processes, and R&D Challenges in Microelectronics (2022) (0)
- Effects of Proton Irradiation on Hole Carrier Transport in Hydrogen-Terminated Diamond Surfaces (2021) (0)
- III-nitride based N-polar current aperture vertical electron transistors (Conference Presentation) (2017) (0)
- Stability of alloyed and nonalloyed ohmic contacts to n-type GaN at high temperature in air (2017) (0)
- Comparative study of CAVET with dielectric and p-GaN gate and Mg ion-implanted current blocking layer (2017) (0)
- Integrating Diamond for Cooling Electronics (2022) (0)
- Invited) Low Loss Power Conversion with Gallium Nitride Based Devices (2015) (0)
- A di/dt Triggered Self-Powered Unidirectional DC Circuit Breaker for both GaN and SiC platform for 400 V DC Applications (2022) (0)
- (Invited) Vertical Gallium Nitride PN Diodes for Grid Resiliency and Medium-Voltage Power Electronics (2021) (0)
- A discussion on various experimental methods of impact ionization coefficient measurement in GaN (2022) (0)
- Processing of GaN vertical devices: Static Induction Transistors (2019) (0)
- A study on MOCVD growth window for high quality N-polar GaN for vertical device applications (2022) (0)
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