Stacia K. Keller

Stacia K. Keller's AcademicInfluence.com Rankings

Stacia K. Keller

Engineering

#6909

World Rank

#8263

Historical Rank

Electrical Engineering

#2108

World Rank

#2213

Historical Rank

engineering Degrees

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Engineering

Stacia K. Keller's Degrees

PhD Electrical Engineering University of California, Santa Barbara
Masters Electrical Engineering University of California, Santa Barbara
Bachelors Electrical Engineering University of California, Santa Barbara

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Stacia K. Keller's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs (2001) (1257)
Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films (1996) (784)
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors (2006) (624)
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells (1998) (622)
Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures (1998) (425)
STRUCTURAL ORIGIN OF V-DEFECTS AND CORRELATION WITH LOCALIZED EXCITONIC CENTERS IN INGAN/GAN MULTIPLE QUANTUM WELLS (1998) (413)
High-power AlGaN/GaN HEMTs for Ka-band applications (2005) (399)
AlGaN/AlN/GaN high-power microwave HEMT (2001) (394)
Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3 (1996) (386)
High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates (2006) (363)
AlGaN/GaN high electron mobility transistors with InGaN back-barriers (2006) (342)
Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition (2002) (332)
VERY HIGH BREAKDOWN VOLTAGE AND LARGE TRANSCONDUCTANCE REALIZED ON GAN HETEROJUNCTION FIELD EFFECT TRANSISTORS (1996) (329)
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays (2013) (324)
Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire (1995) (309)
High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates (2004) (303)
High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN (1999) (300)
Anisotropic epitaxial lateral growth in GaN selective area epitaxy (1997) (272)
Coupling of InGaN quantum-well photoluminescence to silver surface plasmons (1999) (266)
High breakdown GaN HEMT with overlapping gate structure (2000) (266)
Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition (1996) (252)
High Al-content AlGaN/GaN MODFETs for ultrahigh performance (1998) (251)
High internal and external quantum efficiency InGaN/GaN solar cells (2011) (205)
Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates (2005) (203)
Measurement of electron overflow in 450 nm InGaN light-emitting diode structures (2009) (186)
Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition (2009) (185)
Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures (2003) (171)
GaN microwave electronics (1997) (170)
Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V (1997) (170)
Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys (2002) (160)
Current instabilities in GaN-based devices (2001) (154)
High-performance E-mode AlGaN/GaN HEMTs (2006) (153)
N-polar GaN epitaxy and high electron mobility transistors (2013) (148)
Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs (2005) (147)
Measured microwave power performance of AlGaN/GaN MODFET (1996) (140)
Infrared and Raman-scattering studies in single-crystalline GaN nanowires (2001) (134)
Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition (2003) (130)
SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN (2000) (126)
Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth (2010) (116)
In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates (2017) (103)
Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies (2000) (99)
Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs (2018) (99)
Polarity in GaN and ZnO: Theory, measurement, growth, and devices (2016) (97)
Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHz (1997) (92)
Two-photon absorption study of GaN (2000) (85)
Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN (1995) (84)
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques (2004) (84)
A C-band high-dynamic range GaN HEMT low-noise amplifier (2004) (80)
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells (2011) (78)
Metalorganic chemical vapor deposition of group III nitrides: a discussion of critical issues (2003) (74)
Near-field scanning optical spectroscopy of an InGaN quantum well (1998) (72)
Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction (2015) (71)
Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN (2005) (71)
Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation (2006) (71)
High conductivity modulation doped AlGaN/GaN multiple channel heterostructures (2003) (69)
V-Gate GaN HEMTs for X-Band Power Applications (2008) (66)
Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer (2017) (65)
Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth (2007) (63)
N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz (2017) (60)
Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures (2013) (58)
Preparation of indium nitride micro- and nanostructures by ammonolysis of indium oxide (2004) (57)
High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts (1998) (57)
Effect of ohmic contacts on buffer leakage of GaN transistors (2006) (57)
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells (2012) (56)
Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN (2001) (56)
1 - 8-GHz GaN-based power amplifier using flip-chip bonding (1999) (56)
Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz (2007) (56)
Scanning second-harmonic/third-harmonic generation microscopy of gallium nitride (2000) (56)
Study of Impact of Access Resistance on High-Frequency Performance of AlGaN/GaN HEMTs by Measurements at Low Temperatures (2006) (53)
Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers (2000) (51)
OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET (2016) (51)
Plasma Treatment for Leakage Reduction in AlGaN/GaN and GaN Schottky Contacts (2008) (51)
p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs) (2002) (50)
Visible resonant modes in GaN-based photonic crystal membrane cavities (2006) (50)
Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition (2008) (50)
Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates (2009) (48)
Cl2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors (1999) (48)
Spiral Growth of InGaN Nanoscale Islands on GaN (1998) (48)
Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition (2009) (47)
Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices (2017) (47)
Growth study and impurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition (2011) (46)
Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$ (2012) (44)
N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance (2018) (43)
3 - 9-GHz GaN-based microwave power amplifiers with L-C-R broad-band matching (1999) (43)
Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC (2006) (43)
SELECTIVE DRY ETCHING OF GaN OVER AlGaN IN BCL3/SF6 MIXTURES (2004) (42)
High breakdown voltage p–n diodes on GaN on sapphire by MOCVD (2016) (42)
A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors (2009) (41)
N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier (2008) (41)
Two-Stage High-Gain High-Power Distributed Amplifier Using Dual-Gate GaN HEMTs (2011) (39)
Impact of strain on free-exciton resonance energies in wurtzite AlN (2007) (39)
Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition (2008) (38)
The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs (2009) (38)
Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices (2010) (38)
Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs (2012) (37)
High-Breakdown Enhancement-Mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate (2006) (37)
Coupling of InGaN quantum well photoluminescence to silver surface plasmons (1999) (37)
Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells (2015) (37)
Impact of $\hbox{CF}_{4}$ Plasma Treatment on GaN (2007) (37)
W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs (2020) (37)
N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒmax (2012) (36)
Very high voltage operation (>330 V) with high current gain of AlGaN/GaN HBTs (2003) (35)
N-polar GaN-based highly scaled self-aligned MIS-HEMTs with state-of-the-art fT.LG product of 16.8 GHz-µm (2009) (35)
Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) (2018) (35)
Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates (2005) (35)
Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs (2012) (35)
Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire (1996) (34)
Power and linearity characteristics of GaN MISFETs on sapphire substrate (2004) (34)
880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates (2018) (33)
Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an $\hbox{Al}_{2}\hbox{O}_{3}$ Etch-Stop Technology (2012) (33)
Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer (2017) (32)
Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels (2016) (32)
Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors (2013) (32)
N-Polar Deep Recess MISHEMTs With Record 2.9 W/mm at 94 GHz (2016) (31)
Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography (2017) (31)
GaN-Based FETs for Microwave Power Amplification (1999) (30)
Generation of coherent acoustic phonons in strained GaN thin films (2001) (30)
Gallium Nitride Powders from Ammonolysis: Influence of Reaction Parameters on Structure and Properties (2004) (30)
Dual-gate AlGaN/GaN modulation-doped field-effect transistors with cut-off frequencies f/sub T/>60 GHz (2000) (29)
Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers (1998) (29)
Demonstration of ultra-small ( 0.2%) for mini-displays (2021) (29)
Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition (2010) (29)
N-Polar GaN MIS-HEMTs on Sapphire With High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage (2016) (28)
Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates (2010) (27)
High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz (2020) (27)
In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors (2013) (27)
Model to explain the behavior of 2DEG mobility with respect to charge density in N-polar and Ga-polar AlGaN-GaN heterostructures (2016) (26)
Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques (2007) (26)
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition (2009) (26)
Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates (2020) (26)
Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition (2009) (26)
Ge-spacer technology in AlGaN/GaN HEMTs for mm-wave applications (2005) (26)
N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire Substrate (2011) (26)
Growth and properties of InGaN nanoscale islands on GaN (1998) (25)
Non-planar Selective Area Growth and Characterization of GaN and AlGaN (2003) (25)
N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates (2015) (25)
Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation (2018) (25)
First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET (2017) (25)
N-Polar InAlN/AlN/GaN MIS-HEMTs (2010) (24)
Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays (2020) (24)
Growth of high purity N-polar (In,Ga)N films (2017) (24)
W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz (2016) (23)
Measurement of the hot electron mean free path and the momentum relaxation rate in GaN (2014) (23)
RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate (2009) (23)
Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors (1998) (23)
Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN (2019) (23)
Color-tunable <10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates (2020) (22)
GaN‐based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization (2009) (22)
Electrical and structural characterization of Mg-doped p-type Al0.69Ga0.31N films on SiC substrate (2007) (22)
High power GaN oscillators using field-plated HEMT structure (2005) (22)
High-Performance N-Face GaN Microwave MIS-HEMTs With > 70% Power-Added Efficiency (2009) (22)
N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz fT and 405 GHz fmax (2013) (22)
Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors (2014) (22)
Small-signal model extraction of mm-wave N-polar GaN MISHEMT exhibiting record performance: Analysis of gain and validation by 94 GHz loadpull (2016) (22)
Impact of CF 4 Plasma Treatment on GaN (2007) (22)
AlGaN/AlN distributed bragg reflectors for deep ultraviolet wavelengths (2006) (22)
Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition (2013) (21)
Metalorganic Chemical Vapor Deposition Conditions for Efficient Silicon Doping in High Al-Composition AlGaN Films (2005) (21)
Growth of embedded photonic crystals for GaN-based optoelectronic devices (2009) (21)
Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime (2014) (21)
Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide (2005) (21)
Study of interface barrier of SiNx/GaN interface for nitrogen-polar GaN based high electron mobility transistors (2008) (20)
Characterizing the nanoacoustic superlattice in a phonon cavity using a piezoelectric single quantum well (2006) (20)
Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells (2011) (19)
Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells (2002) (19)
Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures (2007) (19)
N-Polar GaN/AlN MIS-HEMT With $f_{\rm MAX}$ of 204 GHz for Ka-Band Applications (2011) (19)
Effect of Al Composition and Gate Recess on Power Performance of AlGaN/GaN High-Electron Mobility Transistors (2008) (18)
Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices (2016) (18)
Transport Studies of AlGaN/GaN Heterostructures of Different Al Mole Fractions With Variable $\hbox{SiN}_{x}$ Passivation Stress (2011) (18)
Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch (2018) (17)
Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN (2018) (17)
Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices (2017) (17)
Suppression of Mg propagation into subsequent layers grown by MOCVD (2017) (17)
Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors (2019) (17)
AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment (2019) (16)
Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition (2019) (16)
Self-Aligned Technology for N-Polar GaN/Al(Ga)N MIS-HEMTs (2011) (16)
Large near resonance third order nonlinearity in GaN (2000) (16)
Studies of carrier dynamics in unintentionally doped gallium nitride bandtail states (2001) (16)
High frequency N-polar GaN planar MIS-HEMTs on sapphire with high breakdown and low dispersion (2016) (16)
Electron mobility in N-polar GaN/AlGaN/GaN heterostructuress (2008) (16)
Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN (2020) (16)
Lateral confinement of electrons in vicinal N-polar AlGaN/GaN heterostructure (2010) (16)
Observation of huge nonlinear absorption enhancement near exciton resonance in GaN (2003) (16)
Record 34.2% efficient mm-wave N-polar AlGaN/GaN MISHEMT at 87 GHz (2016) (16)
AlGaN/AlN/GaN High Electron Mobility Transistors with Improved Carrier Transport (2004) (15)
Low Ohmic Contact Resistance m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations (2010) (15)
Correlation Between DC–RF Dispersion and Gate Leakage in Deeply Recessed GaN/AlGaN/GaN HEMTs (2008) (15)
Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy (2017) (14)
A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency (2013) (14)
Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current (2020) (14)
Local wing tilt analysis of laterally overgrown GaN by x-ray rocking curve imaging (2005) (14)
Design of polarization-dipole-induced isotype heterojunction diodes for use in III–N hot electron transistors (2013) (14)
An improved methodology for extracting interface state density at Si3N4/GaN (2020) (14)
Plasma‐assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades (2016) (14)
6.2 W/Mm and Record 33.8% PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates (2021) (14)
In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge (2014) (14)
Simultaneous four-photon luminescence, third-harmonic generation, and second-harmonic generation microscopy of GaN. (2005) (14)
Interfacial N Vacancies in GaN /( Al , Ga ) N / GaN Heterostructures (2020) (13)
Role of GaN cap layer for reference electrode free AlGaN/GaN-based pH sensors (2019) (13)
First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE (2019) (13)
N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density (2020) (13)
InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates (2021) (13)
Demonstration of 30 GHz OIP3/PDC > 10 dB by mm-wave N-polar Deep Recess MISHEMTs (2019) (13)
Integration of Ba Sr TiO Thin Films With AlGaN/GaN HEMT Circuits (2004) (13)
Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Films (2018) (13)
Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$ (2018) (13)
Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures (2015) (13)
Crystal quality and growth evolution of aluminum nitride on silicon carbide (2006) (13)
Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD (2016) (13)
High-linearity class B power amplifiers in GaN HEMT technology (2003) (13)
Improved properties of high-Al-composition AlGaN/GaN high electron mobility transistor structures with thin GaN cap layers (2014) (12)
Low Phase-Noise 5 GHz AlGaN/GaN HEMT Oscillator Integrated with BaxSr1-xTiO3 Thin Films (2004) (12)
Method to Predict and Optimize Charge Sensitivity of Ungated AlGaN/GaN HEMT-Based Ion Sensor Without Use of Reference Electrode (2015) (12)
First demonstration of improvement in hole conductivity in c-plane III-Nitrides through application of uniaxial strain (2019) (12)
RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation (2011) (12)
High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces (2016) (12)
Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance (2007) (12)
Polarization effects and transport in AlGaN/GaN system (2000) (12)
Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN (2019) (11)
InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays (2015) (11)
W-band passive load pull system for on-wafer characterization of high power density N-polar GaN devices based on output match and drive power requirements vs. gate width (2016) (11)
Dielectric stress tests and capacitance-voltage analysis to evaluate the effect of post deposition annealing on Al2O3 films deposited on GaN (2014) (11)
First report of scaling a normally-off in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET) (2017) (11)
Femtosecond dynamics of exciton bleaching in bulk GaN at room temperature (2002) (11)
Erratum: “Impact of strain on free-exciton resonance energies in wurtzite AlN” [J. Appl. Phys. 102, 123707 (2007)] (2008) (11)
Growth of N-polar GaN by ammonia molecular beam epitaxy (2018) (10)
Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN (2019) (10)
High performance N-polar GaN HEMTs with OIP3/Pdc ∼12dB at 10GHz (2017) (10)
Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs (2006) (10)
Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs (2018) (10)
N-Polar GaN/AlN MIS-HEMT for Ka-Band Power Applications (2010) (10)
Influence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells (2008) (10)
Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors (2009) (9)
Polarization induced three-dimensional hole gas in compositionally graded InxGa1−xN layer (2016) (9)
Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN (2020) (9)
Electron transport in N-polar GaN-based heterostructures (2019) (9)
Performance projection of III‐nitride heterojunction nanowire tunneling field‐effect transistors (2016) (9)
Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates (2017) (9)
mm-Wave N-polar GaN MISHEMT with a self-aligned recessed gate exhibiting record 4.2 W/mm at 94 GHz on Sapphire (2016) (9)
Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels (2018) (9)
A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor (2019) (9)
Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy (2012) (9)
Third harmonic generation microscopy of GaN (2000) (9)
Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE (2021) (8)
Flow modulation metalorganic vapor phase epitaxy of GaN at temperatures below 600 ºC (2020) (8)
Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD (2018) (8)
A novel device design to lower the on-resistance in GaN trench MOSFETs (2016) (8)
MOCVD Growth and Characterization of InN Quantum Dots (2020) (8)
InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Electron Transistors (BAVETs) (2012) (8)
Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness (2016) (8)
Polarization engineered 1-dimensional electron gas arrays (2012) (8)
High speed and high power AlGaN/GaN MODFETs (1997) (8)
Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors (2019) (8)
Characterization of AlSiO dielectrics with varying silicon composition for N-polar GaN-based devices (2020) (8)
Gallium nitride based materials and their application for light emitting devices (1998) (8)
1 kV field plated in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET) (2017) (8)
Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures (2020) (7)
Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs (2017) (7)
Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs (2020) (7)
Very Low Ohmic Contact Resistance through an AlGaN Etch-Stop in Nitrogen-Polar GaN-Based High Electron Mobility Transistors (2010) (7)
Low phase-noise 5 GHz AlGaN/GaN HEMT oscillator integrated with Ba/sub x/Sr/sub 1-x/TiO/sub 3/ thin films (2004) (7)
Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells (2013) (7)
N-polar GaN MIS-HEMTs on sapphire with a proposed figure of merit fmax·VDS, Q of 9.5THz.V (2017) (7)
P–n junction diodes with polarization induced p-type graded InxGa1–xN layer (2017) (7)
3-watt AlGaN-GaN HEMTs on sapphire substrates with thermal management by flip-chip bonding (1998) (7)
Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices (2016) (7)
Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors (2020) (7)
Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition (2020) (7)
MOCVD growth of thick V-pit-free InGaN films on semi-relaxed InGaN substrates (2020) (7)
Exploring metalorganic chemical vapor deposition of Si-alloyed Al 2 O 3 dielectrics using disilane (2017) (7)
Growth and characterization of N‐polar GaN and AlGaN/GaN HEMTs on (111) silicon (2011) (6)
Improved operation stability of in situ AlSiO dielectric grown on (000–1) N-polar GaN by MOCVD (2020) (6)
Oxygen doping of c‐plane GaN by metalorganic chemical vapor deposition (2003) (6)
Surface Treatment for Leakage Reduction in AlGaN/GaN HEMTs (2007) (6)
First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel (2020) (6)
Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition (2019) (6)
GaN HEMTs grown on sapphire substrates for microwave power amplification (1999) (6)
2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature (2021) (6)
Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition (2014) (6)
Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy (2020) (6)
Abrupt GaN/p-GaN:Mg junctions grown via metalorganic chemical vapor deposition (2017) (6)
Substrates and Materials (2017) (6)
Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN (2006) (6)
Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition (2017) (5)
GaN HFETs and MODFETs with very high breakdown voltage and large transconductance (1996) (5)
AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment (2019) (5)
Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures (2018) (5)
Lasing Characteristics of InGaP/InGaAlP Visible Lasers Grown by Metalorganic Chemical Vapor Deposition with Tertiarybutylphosphine (TBP) (1995) (5)
Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN (2017) (5)
Enhancement-mode m -plane AlGaN/GaN HFETs with regrown n+-GaN contact layer (2012) (5)
N-polar GaN HEMTs with fmax > 300 GHz using high-aspect-ratio T-gate design (2011) (5)
Low dark current p-i-n (Al,Ga)N-based solar-blind UV detectors on laterally epitaxially overgrown GaN (1998) (5)
Flatband voltage stability and time to failure of MOCVD-grown SiO2 and Si3N4 dielectrics on N-polar GaN (2019) (5)
Maskless regrowth of GaN for trenched devices by MOCVD (2017) (5)
A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods (2020) (5)
A new field-plated GaN HEMT structure with improved power and noise performance (2004) (5)
N-Polar AlGaN/GaN MIS-HEMTs on SiC with a 16.7 W/mm power density at 10 GHz using an Al2O3 based etch stop technology for the gate recess (2011) (5)
Improved quality nonpolar a ‐plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO) (2008) (5)
AlGaN/GaN MODFETs with low ohmic contact resistances by source/drain n/sup +/ re-growth (1998) (4)
Characterization of Non-Alloyed Ohmic Contacts to Si-Implanted AlGaN/GaN Heterostructures for High-Electron Mobility Transistors (2007) (4)
Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition (2020) (4)
Formation of sub-10 nm width InGaAs finFETs of 200 nm height by atomic layer epitaxy (2013) (4)
Patterned III‐Nitrides on Porous GaN: Extending Elastic Relaxation from the Nano‐ to the Micrometer Scale (2021) (4)
Low ON-resistance and high current GaN Vertical Electron Transistors with buried p-GaN layers (2014) (4)
A comparative study of SiN deposition methods for millimeter-wave AlGaN/GaN HFETs (2008) (4)
High current gain GaN bipolar junction transistors with regrown emitters (2000) (4)
T-gate technology for N-polar GaN-based self-aligned MIS-HEMTs with state-of-the-art fMAX of 127 GHz: Pathway towards scaling to 30nm GaN HEMTs (2010) (4)
Measurement of internal quantum efficiency and surface recombination velocity in InGaN structures (1997) (4)
Design Space of III-N Hot Electron Transistors Using AlGaN and InGaN Polarization-Dipole Barriers (2015) (4)
X‐ray microdiffraction imaging investigations of wing tilt in epitaxially overgrown GaN (2006) (3)
Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors (2009) (3)
Barrier height fluctuations in InGaN polarization dipole diodes (2015) (3)
Corrections to “In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN Substrates’ (2018) (3)
MOCVD growth and properties of thin Al/sub x/Ga/sub 1-x/N layers on GaN (1998) (3)
Effect of indium on the conductivity of poly‐crystalline GaN grown on high purity fused silica (2012) (3)
Commercially Available N-polar GaN HEMT Epitaxy for RF Applications (2021) (3)
HfO2 as gate insulator on N-polar GaN–AlGaN heterostructures (2021) (3)
Novel III-N heterostructure devices for low-power logic and more (2016) (3)
Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition (2018) (3)
N-polar GaN Cap MISHEMT with record 6.7 W/mm at 94 GHz (2016) (3)
Trap-related delay analysis of self-aligned N-polar GaN/InAlN HEMTs with record extrinsic gm of 1105 mS/mm (2011) (3)
Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition (2016) (3)
III-N heterostructure devices for low-power logic (2017) (3)
Electrical properties of InN grown by molecular beam epitaxy (2004) (3)
Ru/N-Polar GaN Schottky Diode With Less Than 2 μA/cm² Reverse Current (2020) (2)
Nano-ultrasonics: science and technology (2004) (2)
Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy (2017) (2)
Integration of Ba/sub x/Sr/sub 1-x/TiO/sub 3/ thin films with AlGaN/GaN HEMT circuits (2003) (2)
A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT (2020) (2)
Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices (2022) (2)
Optimization of Digital Growth of Thick N-Polar InGaN by MOCVD (2019) (2)
Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0.82In0.18N Grown on GaN (2011) (2)
Ultrafast carrier relaxation in group-III nitride multiple quantum wells (2004) (2)
Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films (2021) (2)
Demonstration of acceptor-like traps at positive polarization interfaces in Ga-polar p-type (AlGaN/AlN)/GaN superlattices (2022) (2)
M ‐plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth on c ‐plane patterned templates (2008) (2)
N-polar GaN-based MIS-HEMTs for mixed signal applications (2010) (2)
Demonstration of device-quality 60% relaxed In0.2Ga0.8N on porous GaN pseudo-substrates grown by PAMBE (2022) (2)
Metalorganic chemical vapor deposition and infrared photoluminescence of semipolar (202¯1¯) InN quantum dashes (2021) (2)
Measuring the signature of bias and temperature-dependent barrier heights in III-N materials using a hot electron transistor (2015) (2)
Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition (2022) (2)
Propagation studies of THz nano acoustic waves in GaN (2004) (2)
Common emitter operation of III-N HETs using AlGaN and InGaN polarization-dipole induced barriers (2014) (2)
Electrical characterization of low defect density nonpolar (11 ¯ 2 0) a -plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO) (2008) (2)
Metalorganic chemical vapor deposition of InN quantum dots and nanostructures (2021) (2)
Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine (2021) (2)
Formation of InGaAs fins by atomic layer epitaxy on InP sidewalls (2014) (2)
pH-dependent surface properties of the gallium nitride - Solution interface mapped by surfactant adsorption. (2019) (2)
SiNx/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy (2020) (1)
pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption. (2020) (1)
Generation of coherent acoustic phonons in GaN‐based p‐n junction (2004) (1)
Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices (2019) (1)
Growth by MOCVD and photoluminescence of semipolar (202¯1¯) InN quantum dashes (2021) (1)
Virtual-Source Modeling of N-polar GaN MISHEMTS (2019) (1)
Atom Probe Tomography Quantification of Alloy Fluctuations in (Al,In,Ga)N (2017) (1)
GaN/AlGaN Superlattice Based E-Mode Hole Channel FinFET With Schottky Gate (2023) (1)
Transient wavefunction analysis of a phononic bandgap nano-crystal (2006) (1)
Electron transport in nitrogen‐polar high electron mobility transistors (2009) (1)
Optical Characteristics Of Mocvd-Grown Ingan/Gan Multiple Quantum Wells Investigated By Excitation Energy Dependent Pl And Ple Spectroscopy (1998) (1)
Recombination dynamics of a 268 nm emission peak in Al0.53In0.11Ga0.36N/Al0.58In0.02Ga0.40N multiple (2006) (1)
Plasma‐assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016) (2016) (1)
Tera-hertz acousto-electric modulation in piezoelectric InGaN/GaN quantum wells using nano acoustic waves (2003) (1)
Anisotropic two-dimensional electron gas transport in N-polar GaN/AlGaN heterostructures grown on vicinal substrates (2010) (1)
V-Gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-Band (2008) (1)
High-electron-mobility transistors with metal-organic chemical vapor deposition-regrown contacts for high voltage applications (2020) (1)
Influence of Si-Doping on Carrier Localization of Mocvd-Grown InGaN/GaN Multiple Quantum Wells (1998) (1)
Improved N-polar GaN mm-wave Linearity, Efficiency, and Noise (2022) (1)
Nonlinear optical spectroscopy of band tail states in highly excited InGaN (1999) (1)
Observation of giant ambipolar diffusion coefficient in thick InGaN/GaN multiple-quantum-wells (2001) (1)
Effects of surface oxidation on the pH-dependent surface charge of oxidized aluminum gallium nitride. (2021) (1)
Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy (2013) (1)
InN Quantum Dots by Metalorganic Chemical Vapor Deposition for Optoelectronic Applications (2021) (1)
Measurement of the hot electron mean free path in GaN (2015) (1)
Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films (2007) (1)
Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs (2021) (1)
High Spatial Resolution Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography study of Indium segregation in N-polar InGaN Quantum Wells (2017) (1)
P-GaN/AlGaN/GaN high electron mobility transistors (2002) (1)
III-nitride based N-polar current aperture vertical electron transistors (Conference Presentation) (2017) (0)
Role of below bandgap states in the radiative emission of InGaN/GaN quantum well structures (1999) (0)
Low Phase-Noise 5 GHz AlGaN/GaN HEMT Oscil with BaXSrl-,Ti03 Thin Films (2004) (0)
Recent and forthcoming publications in pss (2016) (0)
First demonstration of Aluminum gallium nitride (AlGaN) - Gallium nitride (GaN) superlattice (SL) based p-channel field effect transistor (2019) (0)
(Invited) Fabrication of N-Polar (Al,Ga,In)N Heterostructures for Transistor Applications (2015) (0)
Femtosecond carrier dynamics in GaN (2001) (0)
Invited MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors (0)
Morphological improvement and elimination of V-pits from long-wavelength all-InGaN based μLEDs grown by MOCVD on compliant substrates (2021) (0)
Comparative study of CAVET with dielectric and p-GaN gate and Mg ion-implanted current blocking layer (2017) (0)
Demonstration of device-quality InGaN grown on porous GaN tiles by MBE with an in-plane lattice constant equivalent to fully relaxed In0.12Ga0.88N (2022) (0)
Ion sensitive AlGaN/GaN heterostructures for cell-based biosensor development (2010) (0)
Electrostatic tuning between 1-dimensional and 2-dimensional electron gases (2012) (0)
Fully Relaxed, Crack-Free AlGaN with upto 50% Al Composition Grown on Porous GaN Pseudo-Substrate (2022) (0)
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Measurements of the Refractive Indices of MOCVD and HVPE Grown AlGAN Films Using Prism-Coupling Techniques Correlated With Spectroscopic Reflection/Transmission Analysis | NIST (2002) (0)
Generation, detection, and propagation of nano-acoustic waves in piezoelectric semiconductors (Invited Paper) (2005) (0)
N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization (2023) (0)
First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz (2023) (0)
Deep Level States in P-type GaN Grown by Ammonia-based Molecular Beam Epitaxy and Metal Organic Chemical Vapor Deposition (2015) (0)
Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films (2021) (0)
Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition (2023) (0)
Atom probe characterization of an AlN interlayer within HEMT structures grown by molecular beam epitaxy and metal-organic chemical vapor deposition (2013) (0)
Impact of CF4 plasma treatment on GaN - eScholarship (2007) (0)
Temperature-dependent High-Frequency Performance of Deep Submicron Ion-Implanted AlGaN/GaN HEMTs (2008) (0)
Study of Pore Geometry and Dislocations in Porous GaN Based Pseudo-Substrates Using TEM (2022) (0)
Ultra-low ohmic contacts to N-polar GaN HEMTs by In ( Ga ) N based source-drain regrowth by Plasma MBE (2010) (0)
III-nitride strain relaxation enabled by porous GaN for optoelectronic applications (2021) (0)
Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage (2020) (0)
Comparative study of near-threshold stimulated emission mechanisms in GaN epilayers and InGaN/GaN multiquantum wells (1999) (0)
Impact of step edges on trapping behavior in N-polar GaN HEMTs (2011) (0)
High performance MBE-grown N-face microwave GaN HEMTs with >70% PAE (2009) (0)
Preface: phys. stat. sol. (c) 7/10 (2010) (0)
N-polar GaN Electronics (2007) (0)
Metalorganic chemical vapor deposition of InN quantum dots and nanostructures (2021) (0)
Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier (2008) (0)
Erratum: “Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates” [J. Appl. Phys. 108, 074502 (2010)] (2010) (0)
Optical properties of doped GaN (Conference Presentation) (2018) (0)
Advances in characterization of III-nitrides by secondary ion mass spectrometry (2004) (0)
Integration of Ba/sub x/Sr/sub 1-x/TiO/sub 3/ thin films with AlGaN/GaN HEMT circuits (2004) (0)
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs) (2019) (0)
THIN FILMS GROWN BY METALORGANIC (2017) (0)
Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs (2021) (0)
Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs (2023) (0)
Carrier loss analysis for ultraviolet light-emitting diodes (2004) (0)
“Erratum: “Polarization engineered 1-dimensional electron gas arrays” [J. Appl. Phys. 111, 043715 (2012)]” (2012) (0)
High-Breakdown Voltage AlGaN/GaN HEMTs using trench gates (2006) (0)

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What Schools Are Affiliated With Stacia K. Keller?

Stacia K. Keller is affiliated with the following schools:

University of California, Santa Barbara