Stacia K. Keller
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Stacia K. Kellerengineering Degrees
Engineering
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Electrical Engineering
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Engineering
Stacia K. Keller's Degrees
- PhD Electrical Engineering University of California, Santa Barbara
- Masters Electrical Engineering University of California, Santa Barbara
- Bachelors Electrical Engineering University of California, Santa Barbara
Why Is Stacia K. Keller Influential?
(Suggest an Edit or Addition)Stacia K. Keller's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs (2001) (1257)
- Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films (1996) (784)
- Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors (2006) (624)
- “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells (1998) (622)
- Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures (1998) (425)
- STRUCTURAL ORIGIN OF V-DEFECTS AND CORRELATION WITH LOCALIZED EXCITONIC CENTERS IN INGAN/GAN MULTIPLE QUANTUM WELLS (1998) (413)
- High-power AlGaN/GaN HEMTs for Ka-band applications (2005) (399)
- AlGaN/AlN/GaN high-power microwave HEMT (2001) (394)
- Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3 (1996) (386)
- High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates (2006) (363)
- AlGaN/GaN high electron mobility transistors with InGaN back-barriers (2006) (342)
- Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition (2002) (332)
- VERY HIGH BREAKDOWN VOLTAGE AND LARGE TRANSCONDUCTANCE REALIZED ON GAN HETEROJUNCTION FIELD EFFECT TRANSISTORS (1996) (329)
- Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays (2013) (324)
- Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire (1995) (309)
- High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates (2004) (303)
- High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN (1999) (300)
- Anisotropic epitaxial lateral growth in GaN selective area epitaxy (1997) (272)
- Coupling of InGaN quantum-well photoluminescence to silver surface plasmons (1999) (266)
- High breakdown GaN HEMT with overlapping gate structure (2000) (266)
- Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition (1996) (252)
- High Al-content AlGaN/GaN MODFETs for ultrahigh performance (1998) (251)
- High internal and external quantum efficiency InGaN/GaN solar cells (2011) (205)
- Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates (2005) (203)
- Measurement of electron overflow in 450 nm InGaN light-emitting diode structures (2009) (186)
- Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition (2009) (185)
- Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures (2003) (171)
- GaN microwave electronics (1997) (170)
- Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V (1997) (170)
- Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys (2002) (160)
- Current instabilities in GaN-based devices (2001) (154)
- High-performance E-mode AlGaN/GaN HEMTs (2006) (153)
- N-polar GaN epitaxy and high electron mobility transistors (2013) (148)
- Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs (2005) (147)
- Measured microwave power performance of AlGaN/GaN MODFET (1996) (140)
- Infrared and Raman-scattering studies in single-crystalline GaN nanowires (2001) (134)
- Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition (2003) (130)
- SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN (2000) (126)
- Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth (2010) (116)
- In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates (2017) (103)
- Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies (2000) (99)
- Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs (2018) (99)
- Polarity in GaN and ZnO: Theory, measurement, growth, and devices (2016) (97)
- Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHz (1997) (92)
- Two-photon absorption study of GaN (2000) (85)
- Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN (1995) (84)
- Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques (2004) (84)
- A C-band high-dynamic range GaN HEMT low-noise amplifier (2004) (80)
- Effect of doping and polarization on carrier collection in InGaN quantum well solar cells (2011) (78)
- Metalorganic chemical vapor deposition of group III nitrides: a discussion of critical issues (2003) (74)
- Near-field scanning optical spectroscopy of an InGaN quantum well (1998) (72)
- Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction (2015) (71)
- Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN (2005) (71)
- Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation (2006) (71)
- High conductivity modulation doped AlGaN/GaN multiple channel heterostructures (2003) (69)
- V-Gate GaN HEMTs for X-Band Power Applications (2008) (66)
- Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer (2017) (65)
- Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth (2007) (63)
- N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz (2017) (60)
- Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures (2013) (58)
- Preparation of indium nitride micro- and nanostructures by ammonolysis of indium oxide (2004) (57)
- High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts (1998) (57)
- Effect of ohmic contacts on buffer leakage of GaN transistors (2006) (57)
- Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells (2012) (56)
- Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN (2001) (56)
- 1 - 8-GHz GaN-based power amplifier using flip-chip bonding (1999) (56)
- Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz (2007) (56)
- Scanning second-harmonic/third-harmonic generation microscopy of gallium nitride (2000) (56)
- Study of Impact of Access Resistance on High-Frequency Performance of AlGaN/GaN HEMTs by Measurements at Low Temperatures (2006) (53)
- Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers (2000) (51)
- OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET (2016) (51)
- Plasma Treatment for Leakage Reduction in AlGaN/GaN and GaN Schottky Contacts (2008) (51)
- p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs) (2002) (50)
- Visible resonant modes in GaN-based photonic crystal membrane cavities (2006) (50)
- Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition (2008) (50)
- Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates (2009) (48)
- Cl2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors (1999) (48)
- Spiral Growth of InGaN Nanoscale Islands on GaN (1998) (48)
- Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition (2009) (47)
- Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices (2017) (47)
- Growth study and impurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition (2011) (46)
- Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$ (2012) (44)
- N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance (2018) (43)
- 3 - 9-GHz GaN-based microwave power amplifiers with L-C-R broad-band matching (1999) (43)
- Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC (2006) (43)
- SELECTIVE DRY ETCHING OF GaN OVER AlGaN IN BCL3/SF6 MIXTURES (2004) (42)
- High breakdown voltage p–n diodes on GaN on sapphire by MOCVD (2016) (42)
- A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors (2009) (41)
- N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier (2008) (41)
- Two-Stage High-Gain High-Power Distributed Amplifier Using Dual-Gate GaN HEMTs (2011) (39)
- Impact of strain on free-exciton resonance energies in wurtzite AlN (2007) (39)
- Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition (2008) (38)
- The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs (2009) (38)
- Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices (2010) (38)
- Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs (2012) (37)
- High-Breakdown Enhancement-Mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate (2006) (37)
- Coupling of InGaN quantum well photoluminescence to silver surface plasmons (1999) (37)
- Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells (2015) (37)
- Impact of $\hbox{CF}_{4}$ Plasma Treatment on GaN (2007) (37)
- W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs (2020) (37)
- N-polar GaN/InAlN MIS-HEMT with 400-GHz ƒmax (2012) (36)
- Very high voltage operation (>330 V) with high current gain of AlGaN/GaN HBTs (2003) (35)
- N-polar GaN-based highly scaled self-aligned MIS-HEMTs with state-of-the-art fT.LG product of 16.8 GHz-µm (2009) (35)
- Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) (2018) (35)
- Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates (2005) (35)
- Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs (2012) (35)
- Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire (1996) (34)
- Power and linearity characteristics of GaN MISFETs on sapphire substrate (2004) (34)
- 880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates (2018) (33)
- Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an $\hbox{Al}_{2}\hbox{O}_{3}$ Etch-Stop Technology (2012) (33)
- Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer (2017) (32)
- Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels (2016) (32)
- Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors (2013) (32)
- N-Polar Deep Recess MISHEMTs With Record 2.9 W/mm at 94 GHz (2016) (31)
- Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography (2017) (31)
- GaN-Based FETs for Microwave Power Amplification (1999) (30)
- Generation of coherent acoustic phonons in strained GaN thin films (2001) (30)
- Gallium Nitride Powders from Ammonolysis: Influence of Reaction Parameters on Structure and Properties (2004) (30)
- Dual-gate AlGaN/GaN modulation-doped field-effect transistors with cut-off frequencies f/sub T/>60 GHz (2000) (29)
- Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers (1998) (29)
- Demonstration of ultra-small ( 0.2%) for mini-displays (2021) (29)
- Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition (2010) (29)
- N-Polar GaN MIS-HEMTs on Sapphire With High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage (2016) (28)
- Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates (2010) (27)
- High Linearity and High Gain Performance of N-Polar GaN MIS-HEMT at 30 GHz (2020) (27)
- In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors (2013) (27)
- Model to explain the behavior of 2DEG mobility with respect to charge density in N-polar and Ga-polar AlGaN-GaN heterostructures (2016) (26)
- Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques (2007) (26)
- Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition (2009) (26)
- Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates (2020) (26)
- Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition (2009) (26)
- Ge-spacer technology in AlGaN/GaN HEMTs for mm-wave applications (2005) (26)
- N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire Substrate (2011) (26)
- Growth and properties of InGaN nanoscale islands on GaN (1998) (25)
- Non-planar Selective Area Growth and Characterization of GaN and AlGaN (2003) (25)
- N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates (2015) (25)
- Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation (2018) (25)
- First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET (2017) (25)
- N-Polar InAlN/AlN/GaN MIS-HEMTs (2010) (24)
- Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays (2020) (24)
- Growth of high purity N-polar (In,Ga)N films (2017) (24)
- W-band N-polar GaN MISHEMTs with high power and record 27.8% efficiency at 94 GHz (2016) (23)
- Measurement of the hot electron mean free path and the momentum relaxation rate in GaN (2014) (23)
- RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate (2009) (23)
- Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors (1998) (23)
- Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN (2019) (23)
- Color-tunable <10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates (2020) (22)
- GaN‐based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization (2009) (22)
- Electrical and structural characterization of Mg-doped p-type Al0.69Ga0.31N films on SiC substrate (2007) (22)
- High power GaN oscillators using field-plated HEMT structure (2005) (22)
- High-Performance N-Face GaN Microwave MIS-HEMTs With > 70% Power-Added Efficiency (2009) (22)
- N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz fT and 405 GHz fmax (2013) (22)
- Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors (2014) (22)
- Small-signal model extraction of mm-wave N-polar GaN MISHEMT exhibiting record performance: Analysis of gain and validation by 94 GHz loadpull (2016) (22)
- Impact of CF 4 Plasma Treatment on GaN (2007) (22)
- AlGaN/AlN distributed bragg reflectors for deep ultraviolet wavelengths (2006) (22)
- Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition (2013) (21)
- Metalorganic Chemical Vapor Deposition Conditions for Efficient Silicon Doping in High Al-Composition AlGaN Films (2005) (21)
- Growth of embedded photonic crystals for GaN-based optoelectronic devices (2009) (21)
- Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime (2014) (21)
- Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide (2005) (21)
- Study of interface barrier of SiNx/GaN interface for nitrogen-polar GaN based high electron mobility transistors (2008) (20)
- Characterizing the nanoacoustic superlattice in a phonon cavity using a piezoelectric single quantum well (2006) (20)
- Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells (2011) (19)
- Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells (2002) (19)
- Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures (2007) (19)
- N-Polar GaN/AlN MIS-HEMT With $f_{\rm MAX}$ of 204 GHz for Ka-Band Applications (2011) (19)
- Effect of Al Composition and Gate Recess on Power Performance of AlGaN/GaN High-Electron Mobility Transistors (2008) (18)
- Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices (2016) (18)
- Transport Studies of AlGaN/GaN Heterostructures of Different Al Mole Fractions With Variable $\hbox{SiN}_{x}$ Passivation Stress (2011) (18)
- Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch (2018) (17)
- Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN (2018) (17)
- Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices (2017) (17)
- Suppression of Mg propagation into subsequent layers grown by MOCVD (2017) (17)
- Investigation of nitrogen polar p-type doped GaN/AlxGa(1-x)N superlattices for applications in wide-bandgap p-type field effect transistors (2019) (17)
- AlGaN/GaN Superlattice‐Based p‐Type Field‐Effect Transistor with Tetramethylammonium Hydroxide Treatment (2019) (16)
- Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition (2019) (16)
- Self-Aligned Technology for N-Polar GaN/Al(Ga)N MIS-HEMTs (2011) (16)
- Large near resonance third order nonlinearity in GaN (2000) (16)
- Studies of carrier dynamics in unintentionally doped gallium nitride bandtail states (2001) (16)
- High frequency N-polar GaN planar MIS-HEMTs on sapphire with high breakdown and low dispersion (2016) (16)
- Electron mobility in N-polar GaN/AlGaN/GaN heterostructuress (2008) (16)
- Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN (2020) (16)
- Lateral confinement of electrons in vicinal N-polar AlGaN/GaN heterostructure (2010) (16)
- Observation of huge nonlinear absorption enhancement near exciton resonance in GaN (2003) (16)
- Record 34.2% efficient mm-wave N-polar AlGaN/GaN MISHEMT at 87 GHz (2016) (16)
- AlGaN/AlN/GaN High Electron Mobility Transistors with Improved Carrier Transport (2004) (15)
- Low Ohmic Contact Resistance m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations (2010) (15)
- Correlation Between DC–RF Dispersion and Gate Leakage in Deeply Recessed GaN/AlGaN/GaN HEMTs (2008) (15)
- Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy (2017) (14)
- A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency (2013) (14)
- Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-Current (2020) (14)
- Local wing tilt analysis of laterally overgrown GaN by x-ray rocking curve imaging (2005) (14)
- Design of polarization-dipole-induced isotype heterojunction diodes for use in III–N hot electron transistors (2013) (14)
- An improved methodology for extracting interface state density at Si3N4/GaN (2020) (14)
- Plasma‐assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades (2016) (14)
- 6.2 W/Mm and Record 33.8% PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates (2021) (14)
- In situ metalorganic chemical vapor deposition of Al2O3 on N-face GaN and evidence of polarity induced fixed charge (2014) (14)
- Simultaneous four-photon luminescence, third-harmonic generation, and second-harmonic generation microscopy of GaN. (2005) (14)
- Interfacial N Vacancies in GaN /( Al , Ga ) N / GaN Heterostructures (2020) (13)
- Role of GaN cap layer for reference electrode free AlGaN/GaN-based pH sensors (2019) (13)
- First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE (2019) (13)
- N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density (2020) (13)
- InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates (2021) (13)
- Demonstration of 30 GHz OIP3/PDC > 10 dB by mm-wave N-polar Deep Recess MISHEMTs (2019) (13)
- Integration of Ba Sr TiO Thin Films With AlGaN/GaN HEMT Circuits (2004) (13)
- Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Films (2018) (13)
- Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$ (2018) (13)
- Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures (2015) (13)
- Crystal quality and growth evolution of aluminum nitride on silicon carbide (2006) (13)
- Controlled low Si doping and high breakdown voltages in GaN on sapphire grown by MOCVD (2016) (13)
- High-linearity class B power amplifiers in GaN HEMT technology (2003) (13)
- Improved properties of high-Al-composition AlGaN/GaN high electron mobility transistor structures with thin GaN cap layers (2014) (12)
- Low Phase-Noise 5 GHz AlGaN/GaN HEMT Oscillator Integrated with BaxSr1-xTiO3 Thin Films (2004) (12)
- Method to Predict and Optimize Charge Sensitivity of Ungated AlGaN/GaN HEMT-Based Ion Sensor Without Use of Reference Electrode (2015) (12)
- First demonstration of improvement in hole conductivity in c-plane III-Nitrides through application of uniaxial strain (2019) (12)
- RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation (2011) (12)
- High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces (2016) (12)
- Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance (2007) (12)
- Polarization effects and transport in AlGaN/GaN system (2000) (12)
- Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN (2019) (11)
- InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays (2015) (11)
- W-band passive load pull system for on-wafer characterization of high power density N-polar GaN devices based on output match and drive power requirements vs. gate width (2016) (11)
- Dielectric stress tests and capacitance-voltage analysis to evaluate the effect of post deposition annealing on Al2O3 films deposited on GaN (2014) (11)
- First report of scaling a normally-off in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET) (2017) (11)
- Femtosecond dynamics of exciton bleaching in bulk GaN at room temperature (2002) (11)
- Erratum: “Impact of strain on free-exciton resonance energies in wurtzite AlN” [J. Appl. Phys. 102, 123707 (2007)] (2008) (11)
- Growth of N-polar GaN by ammonia molecular beam epitaxy (2018) (10)
- Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN (2019) (10)
- High performance N-polar GaN HEMTs with OIP3/Pdc ∼12dB at 10GHz (2017) (10)
- Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs (2006) (10)
- Observation of Hot Electron and Impact Ionization in N-Polar GaN MIS-HEMTs (2018) (10)
- N-Polar GaN/AlN MIS-HEMT for Ka-Band Power Applications (2010) (10)
- Influence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells (2008) (10)
- Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors (2009) (9)
- Polarization induced three-dimensional hole gas in compositionally graded InxGa1−xN layer (2016) (9)
- Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN (2020) (9)
- Electron transport in N-polar GaN-based heterostructures (2019) (9)
- Performance projection of III‐nitride heterojunction nanowire tunneling field‐effect transistors (2016) (9)
- Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates (2017) (9)
- mm-Wave N-polar GaN MISHEMT with a self-aligned recessed gate exhibiting record 4.2 W/mm at 94 GHz on Sapphire (2016) (9)
- Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels (2018) (9)
- A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor (2019) (9)
- Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy (2012) (9)
- Third harmonic generation microscopy of GaN (2000) (9)
- Evaluation of linearity at 30 GHz for N-polar GaN deep recess transistors with 10.3 W/mm of output power and 47.4% PAE (2021) (8)
- Flow modulation metalorganic vapor phase epitaxy of GaN at temperatures below 600 ºC (2020) (8)
- Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD (2018) (8)
- A novel device design to lower the on-resistance in GaN trench MOSFETs (2016) (8)
- MOCVD Growth and Characterization of InN Quantum Dots (2020) (8)
- InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Electron Transistors (BAVETs) (2012) (8)
- Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness (2016) (8)
- Polarization engineered 1-dimensional electron gas arrays (2012) (8)
- High speed and high power AlGaN/GaN MODFETs (1997) (8)
- Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors (2019) (8)
- Characterization of AlSiO dielectrics with varying silicon composition for N-polar GaN-based devices (2020) (8)
- Gallium nitride based materials and their application for light emitting devices (1998) (8)
- 1 kV field plated in-situ oxide, GaN interlayer based vertical trench MOSFET (OG-FET) (2017) (8)
- Observation of ID-VD Kink in N-Polar GaN MIS-HEMTs at Cryogenic Temperatures (2020) (7)
- Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs (2017) (7)
- Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs (2020) (7)
- Very Low Ohmic Contact Resistance through an AlGaN Etch-Stop in Nitrogen-Polar GaN-Based High Electron Mobility Transistors (2010) (7)
- Low phase-noise 5 GHz AlGaN/GaN HEMT oscillator integrated with Ba/sub x/Sr/sub 1-x/TiO/sub 3/ thin films (2004) (7)
- Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells (2013) (7)
- N-polar GaN MIS-HEMTs on sapphire with a proposed figure of merit fmax·VDS, Q of 9.5THz.V (2017) (7)
- P–n junction diodes with polarization induced p-type graded InxGa1–xN layer (2017) (7)
- 3-watt AlGaN-GaN HEMTs on sapphire substrates with thermal management by flip-chip bonding (1998) (7)
- Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices (2016) (7)
- Proposed existence of acceptor-like traps at positive polarization interfaces in p-type III-nitride semiconductors (2020) (7)
- Ultra-high silicon doped N-polar GaN contact layers grown by metal-organic chemical vapor deposition (2020) (7)
- MOCVD growth of thick V-pit-free InGaN films on semi-relaxed InGaN substrates (2020) (7)
- Exploring metalorganic chemical vapor deposition of Si-alloyed Al 2 O 3 dielectrics using disilane (2017) (7)
- Growth and characterization of N‐polar GaN and AlGaN/GaN HEMTs on (111) silicon (2011) (6)
- Improved operation stability of in situ AlSiO dielectric grown on (000–1) N-polar GaN by MOCVD (2020) (6)
- Oxygen doping of c‐plane GaN by metalorganic chemical vapor deposition (2003) (6)
- Surface Treatment for Leakage Reduction in AlGaN/GaN HEMTs (2007) (6)
- First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel (2020) (6)
- Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition (2019) (6)
- GaN HEMTs grown on sapphire substrates for microwave power amplification (1999) (6)
- 2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature (2021) (6)
- Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition (2014) (6)
- Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy (2020) (6)
- Abrupt GaN/p-GaN:Mg junctions grown via metalorganic chemical vapor deposition (2017) (6)
- Substrates and Materials (2017) (6)
- Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN (2006) (6)
- Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition (2017) (5)
- GaN HFETs and MODFETs with very high breakdown voltage and large transconductance (1996) (5)
- AlGaN /GaN superlattice based p-channel field effect transistor (pFET) with TMAH treatment (2019) (5)
- Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures (2018) (5)
- Lasing Characteristics of InGaP/InGaAlP Visible Lasers Grown by Metalorganic Chemical Vapor Deposition with Tertiarybutylphosphine (TBP) (1995) (5)
- Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN (2017) (5)
- Enhancement-mode m -plane AlGaN/GaN HFETs with regrown n+-GaN contact layer (2012) (5)
- N-polar GaN HEMTs with fmax > 300 GHz using high-aspect-ratio T-gate design (2011) (5)
- Low dark current p-i-n (Al,Ga)N-based solar-blind UV detectors on laterally epitaxially overgrown GaN (1998) (5)
- Flatband voltage stability and time to failure of MOCVD-grown SiO2 and Si3N4 dielectrics on N-polar GaN (2019) (5)
- Maskless regrowth of GaN for trenched devices by MOCVD (2017) (5)
- A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods (2020) (5)
- A new field-plated GaN HEMT structure with improved power and noise performance (2004) (5)
- N-Polar AlGaN/GaN MIS-HEMTs on SiC with a 16.7 W/mm power density at 10 GHz using an Al2O3 based etch stop technology for the gate recess (2011) (5)
- Improved quality nonpolar a ‐plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO) (2008) (5)
- AlGaN/GaN MODFETs with low ohmic contact resistances by source/drain n/sup +/ re-growth (1998) (4)
- Characterization of Non-Alloyed Ohmic Contacts to Si-Implanted AlGaN/GaN Heterostructures for High-Electron Mobility Transistors (2007) (4)
- Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition (2020) (4)
- Formation of sub-10 nm width InGaAs finFETs of 200 nm height by atomic layer epitaxy (2013) (4)
- Patterned III‐Nitrides on Porous GaN: Extending Elastic Relaxation from the Nano‐ to the Micrometer Scale (2021) (4)
- Low ON-resistance and high current GaN Vertical Electron Transistors with buried p-GaN layers (2014) (4)
- A comparative study of SiN deposition methods for millimeter-wave AlGaN/GaN HFETs (2008) (4)
- High current gain GaN bipolar junction transistors with regrown emitters (2000) (4)
- T-gate technology for N-polar GaN-based self-aligned MIS-HEMTs with state-of-the-art fMAX of 127 GHz: Pathway towards scaling to 30nm GaN HEMTs (2010) (4)
- Measurement of internal quantum efficiency and surface recombination velocity in InGaN structures (1997) (4)
- Design Space of III-N Hot Electron Transistors Using AlGaN and InGaN Polarization-Dipole Barriers (2015) (4)
- X‐ray microdiffraction imaging investigations of wing tilt in epitaxially overgrown GaN (2006) (3)
- Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors (2009) (3)
- Barrier height fluctuations in InGaN polarization dipole diodes (2015) (3)
- Corrections to “In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN Substrates’ (2018) (3)
- MOCVD growth and properties of thin Al/sub x/Ga/sub 1-x/N layers on GaN (1998) (3)
- Effect of indium on the conductivity of poly‐crystalline GaN grown on high purity fused silica (2012) (3)
- Commercially Available N-polar GaN HEMT Epitaxy for RF Applications (2021) (3)
- HfO2 as gate insulator on N-polar GaN–AlGaN heterostructures (2021) (3)
- Novel III-N heterostructure devices for low-power logic and more (2016) (3)
- Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition (2018) (3)
- N-polar GaN Cap MISHEMT with record 6.7 W/mm at 94 GHz (2016) (3)
- Trap-related delay analysis of self-aligned N-polar GaN/InAlN HEMTs with record extrinsic gm of 1105 mS/mm (2011) (3)
- Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition (2016) (3)
- III-N heterostructure devices for low-power logic (2017) (3)
- Electrical properties of InN grown by molecular beam epitaxy (2004) (3)
- Ru/N-Polar GaN Schottky Diode With Less Than 2 μA/cm² Reverse Current (2020) (2)
- Nano-ultrasonics: science and technology (2004) (2)
- Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy (2017) (2)
- Integration of Ba/sub x/Sr/sub 1-x/TiO/sub 3/ thin films with AlGaN/GaN HEMT circuits (2003) (2)
- A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT (2020) (2)
- Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices (2022) (2)
- Optimization of Digital Growth of Thick N-Polar InGaN by MOCVD (2019) (2)
- Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0.82In0.18N Grown on GaN (2011) (2)
- Ultrafast carrier relaxation in group-III nitride multiple quantum wells (2004) (2)
- Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films (2021) (2)
- Demonstration of acceptor-like traps at positive polarization interfaces in Ga-polar p-type (AlGaN/AlN)/GaN superlattices (2022) (2)
- M ‐plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth on c ‐plane patterned templates (2008) (2)
- N-polar GaN-based MIS-HEMTs for mixed signal applications (2010) (2)
- Demonstration of device-quality 60% relaxed In0.2Ga0.8N on porous GaN pseudo-substrates grown by PAMBE (2022) (2)
- Metalorganic chemical vapor deposition and infrared photoluminescence of semipolar (202¯1¯) InN quantum dashes (2021) (2)
- Measuring the signature of bias and temperature-dependent barrier heights in III-N materials using a hot electron transistor (2015) (2)
- Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition (2022) (2)
- Propagation studies of THz nano acoustic waves in GaN (2004) (2)
- Common emitter operation of III-N HETs using AlGaN and InGaN polarization-dipole induced barriers (2014) (2)
- Electrical characterization of low defect density nonpolar (11 ¯ 2 0) a -plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO) (2008) (2)
- Metalorganic chemical vapor deposition of InN quantum dots and nanostructures (2021) (2)
- Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine (2021) (2)
- Formation of InGaAs fins by atomic layer epitaxy on InP sidewalls (2014) (2)
- pH-dependent surface properties of the gallium nitride - Solution interface mapped by surfactant adsorption. (2019) (2)
- SiNx/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy (2020) (1)
- pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption. (2020) (1)
- Generation of coherent acoustic phonons in GaN‐based p‐n junction (2004) (1)
- Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices (2019) (1)
- Growth by MOCVD and photoluminescence of semipolar (202¯1¯) InN quantum dashes (2021) (1)
- Virtual-Source Modeling of N-polar GaN MISHEMTS (2019) (1)
- Atom Probe Tomography Quantification of Alloy Fluctuations in (Al,In,Ga)N (2017) (1)
- GaN/AlGaN Superlattice Based E-Mode Hole Channel FinFET With Schottky Gate (2023) (1)
- Transient wavefunction analysis of a phononic bandgap nano-crystal (2006) (1)
- Electron transport in nitrogen‐polar high electron mobility transistors (2009) (1)
- Optical Characteristics Of Mocvd-Grown Ingan/Gan Multiple Quantum Wells Investigated By Excitation Energy Dependent Pl And Ple Spectroscopy (1998) (1)
- Recombination dynamics of a 268 nm emission peak in Al0.53In0.11Ga0.36N/Al0.58In0.02Ga0.40N multiple (2006) (1)
- Plasma‐assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016) (2016) (1)
- Tera-hertz acousto-electric modulation in piezoelectric InGaN/GaN quantum wells using nano acoustic waves (2003) (1)
- Anisotropic two-dimensional electron gas transport in N-polar GaN/AlGaN heterostructures grown on vicinal substrates (2010) (1)
- V-Gate GaN HEMTs with 12.2 W/mm and 65% PAE at X-Band (2008) (1)
- High-electron-mobility transistors with metal-organic chemical vapor deposition-regrown contacts for high voltage applications (2020) (1)
- Influence of Si-Doping on Carrier Localization of Mocvd-Grown InGaN/GaN Multiple Quantum Wells (1998) (1)
- Improved N-polar GaN mm-wave Linearity, Efficiency, and Noise (2022) (1)
- Nonlinear optical spectroscopy of band tail states in highly excited InGaN (1999) (1)
- Observation of giant ambipolar diffusion coefficient in thick InGaN/GaN multiple-quantum-wells (2001) (1)
- Effects of surface oxidation on the pH-dependent surface charge of oxidized aluminum gallium nitride. (2021) (1)
- Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy (2013) (1)
- InN Quantum Dots by Metalorganic Chemical Vapor Deposition for Optoelectronic Applications (2021) (1)
- Measurement of the hot electron mean free path in GaN (2015) (1)
- Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films (2007) (1)
- Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs (2021) (1)
- High Spatial Resolution Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography study of Indium segregation in N-polar InGaN Quantum Wells (2017) (1)
- P-GaN/AlGaN/GaN high electron mobility transistors (2002) (1)
- III-nitride based N-polar current aperture vertical electron transistors (Conference Presentation) (2017) (0)
- Role of below bandgap states in the radiative emission of InGaN/GaN quantum well structures (1999) (0)
- Low Phase-Noise 5 GHz AlGaN/GaN HEMT Oscil with BaXSrl-,Ti03 Thin Films (2004) (0)
- Recent and forthcoming publications in pss (2016) (0)
- First demonstration of Aluminum gallium nitride (AlGaN) - Gallium nitride (GaN) superlattice (SL) based p-channel field effect transistor (2019) (0)
- (Invited) Fabrication of N-Polar (Al,Ga,In)N Heterostructures for Transistor Applications (2015) (0)
- Femtosecond carrier dynamics in GaN (2001) (0)
- Invited MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors (0)
- Morphological improvement and elimination of V-pits from long-wavelength all-InGaN based μLEDs grown by MOCVD on compliant substrates (2021) (0)
- Comparative study of CAVET with dielectric and p-GaN gate and Mg ion-implanted current blocking layer (2017) (0)
- Demonstration of device-quality InGaN grown on porous GaN tiles by MBE with an in-plane lattice constant equivalent to fully relaxed In0.12Ga0.88N (2022) (0)
- Ion sensitive AlGaN/GaN heterostructures for cell-based biosensor development (2010) (0)
- Electrostatic tuning between 1-dimensional and 2-dimensional electron gases (2012) (0)
- Fully Relaxed, Crack-Free AlGaN with upto 50% Al Composition Grown on Porous GaN Pseudo-Substrate (2022) (0)
- YOU MAY BE INTERESTED IN Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in Nand Ga-face AlGaN / GaN heterostructures (2008) (0)
- Measurements of the Refractive Indices of MOCVD and HVPE Grown AlGAN Films Using Prism-Coupling Techniques Correlated With Spectroscopic Reflection/Transmission Analysis | NIST (2002) (0)
- Generation, detection, and propagation of nano-acoustic waves in piezoelectric semiconductors (Invited Paper) (2005) (0)
- N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization (2023) (0)
- First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz (2023) (0)
- Deep Level States in P-type GaN Grown by Ammonia-based Molecular Beam Epitaxy and Metal Organic Chemical Vapor Deposition (2015) (0)
- Investigation and optimization of N-polar GaN porosification for regrowth of smooth hillocks-free GaN films (2021) (0)
- Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition (2023) (0)
- Atom probe characterization of an AlN interlayer within HEMT structures grown by molecular beam epitaxy and metal-organic chemical vapor deposition (2013) (0)
- Impact of CF4 plasma treatment on GaN - eScholarship (2007) (0)
- Temperature-dependent High-Frequency Performance of Deep Submicron Ion-Implanted AlGaN/GaN HEMTs (2008) (0)
- Study of Pore Geometry and Dislocations in Porous GaN Based Pseudo-Substrates Using TEM (2022) (0)
- Ultra-low ohmic contacts to N-polar GaN HEMTs by In ( Ga ) N based source-drain regrowth by Plasma MBE (2010) (0)
- III-nitride strain relaxation enabled by porous GaN for optoelectronic applications (2021) (0)
- Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage (2020) (0)
- Comparative study of near-threshold stimulated emission mechanisms in GaN epilayers and InGaN/GaN multiquantum wells (1999) (0)
- Impact of step edges on trapping behavior in N-polar GaN HEMTs (2011) (0)
- High performance MBE-grown N-face microwave GaN HEMTs with >70% PAE (2009) (0)
- Preface: phys. stat. sol. (c) 7/10 (2010) (0)
- N-polar GaN Electronics (2007) (0)
- Metalorganic chemical vapor deposition of InN quantum dots and nanostructures (2021) (0)
- Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier (2008) (0)
- Erratum: “Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates” [J. Appl. Phys. 108, 074502 (2010)] (2010) (0)
- Optical properties of doped GaN (Conference Presentation) (2018) (0)
- Advances in characterization of III-nitrides by secondary ion mass spectrometry (2004) (0)
- Integration of Ba/sub x/Sr/sub 1-x/TiO/sub 3/ thin films with AlGaN/GaN HEMT circuits (2004) (0)
- Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs) (2019) (0)
- THIN FILMS GROWN BY METALORGANIC (2017) (0)
- Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs (2021) (0)
- Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs (2023) (0)
- Carrier loss analysis for ultraviolet light-emitting diodes (2004) (0)
- “Erratum: “Polarization engineered 1-dimensional electron gas arrays” [J. Appl. Phys. 111, 043715 (2012)]” (2012) (0)
- High-Breakdown Voltage AlGaN/GaN HEMTs using trench gates (2006) (0)
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