Stephen Pearton
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Why Is Stephen Pearton Influential?
(Suggest an Edit or Addition)According to Wikipedia, Stephen Pearton is an American materials scientist, engineer, and Distinguished Professor at the University of Florida. Pearton's work focuses on the use of advanced materials in areas such as laser diodes, nanomaterial applications, and similar applications.
Stephen Pearton's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Recent progress in processing and properties of ZnO (2003) (1926)
- GAN : PROCESSING, DEFECTS, AND DEVICES (1999) (1603)
- Whispering-gallery mode microdisk lasers (1992) (1313)
- A review of Ga2O3 materials, processing, and devices (2018) (1300)
- Zinc oxide bulk, thin films and nanostructures : processing, properties and applications (2006) (930)
- Wide band gap ferromagnetic semiconductors and oxides (2003) (924)
- The blue laser diode-the complete story (2000) (711)
- Recent advances in processing of ZnO (2004) (638)
- ZnO nanowire growth and devices (2004) (537)
- Hydrogen-selective sensing at room temperature with ZnO nanorods (2005) (525)
- ZnO: growth, doping & processing (2004) (523)
- Dilute magnetic semiconducting oxides (2004) (494)
- Hydrogen interactions with defects in crystalline solids (1992) (418)
- Fabrication and performance of GaN electronic devices (2000) (412)
- Advances in wide bandgap materials for semiconductor spintronics (2003) (403)
- Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes (1986) (390)
- Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy (2005) (385)
- Ferromagnetism in Mn-implanted ZnO:Sn single crystals (2003) (383)
- Ion implantation into GaN (2001) (338)
- Hydrogen Sensing Using Pd‐Functionalized Multi‐Layer Graphene Nanoribbon Networks (2010) (310)
- Magnetic properties of n-GaMnN thin films (2002) (298)
- Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods (2005) (282)
- Perspective—Opportunities and Future Directions for Ga2O3 (2017) (281)
- Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS (2018) (280)
- Ion implantation for isolation of III-V semiconductors (1990) (269)
- Ion implantation doping and isolation of GaN (1995) (258)
- TOPICAL REVIEW: GaN-based diodes and transistors for chemical, gas, biological and pressure sensing (2004) (255)
- Magnetic and structural properties of Mn-implanted GaN (2001) (252)
- Ferromagnetism in cobalt-implanted ZnO (2003) (250)
- Recent advances in wide bandgap semiconductor biological and gas sensors (2009) (244)
- Threshold characteristics of semiconductor microdisk lasers (1993) (237)
- A survey of ohmic contacts to III-V compound semiconductors (1997) (236)
- Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN (2001) (234)
- Depletion-mode ZnO nanowire field-effect transistor (2004) (229)
- Review—Ionizing Radiation Damage Effects on GaN Devices (2016) (207)
- Donor neutralization in GaAs(Si) by atomic hydrogen (1985) (206)
- Inductively coupled plasma etching of GaN (1996) (203)
- Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors (1998) (201)
- Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C. (2002) (200)
- p-type behavior in phosphorus-doped (Zn,Mg)O device structures (2004) (197)
- Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy (1989) (194)
- Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO (2003) (189)
- Directional light coupling from microdisk lasers (1993) (182)
- Electrical effects of plasma damage in p-GaN (1999) (182)
- 1.54‐μm photoluminescence from Er‐implanted GaN and AlN (1994) (181)
- GaN and Related Materials (1997) (181)
- Electrical characteristics of Au and Ag Schottky contacts on n-ZnO (2003) (176)
- Effects of high-dose Mn implantation into ZnO grown on sapphire (2004) (171)
- Ca and O ion implantation doping of GaN (1996) (169)
- Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs‐GaxAl1−xAs interfaces (1986) (167)
- Structure and magnetism of cobalt-doped ZnO thin films (2008) (166)
- Thermal stability of W ohmic contacts to n‐type GaN (1996) (165)
- Review of radiation damage in GaN-based materials and devices (2013) (165)
- Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors (2002) (161)
- MgZnO/AlGaN heterostructure light-emitting diodes (2004) (160)
- A Review of Dry Etching of GaN and Related Materials (2000) (159)
- Hydrogen local modes and shallow donors in ZnO (2005) (152)
- Transport properties of phosphorus-doped ZnO thin films (2003) (150)
- Electrical transport properties of single ZnO nanorods (2004) (149)
- Ion‐implanted GaN junction field effect transistor (1996) (147)
- Wet chemical etching of AlN (1995) (145)
- Radiation effects in GaN materials and devices (2013) (142)
- Carbon nanotube films for room temperature hydrogen sensing (2005) (138)
- Hydrogenation of shallow‐donor levels in GaAs (1986) (138)
- Electroluminescence from ZnO nanowire/polymer composite p-n junction (2006) (137)
- ZnO Doped With Transition Metal Ions (2007) (137)
- pH measurements with single ZnO nanorods integrated with a microchannel (2005) (135)
- Room temperature operation of microdisc lasers with submilliamp threshold current (1992) (135)
- Contacts to ZnO (2006) (135)
- AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation (2003) (131)
- Room temperature deposited indium zinc oxide thin film transistors (2007) (131)
- Defects in electronic materials (1988) (130)
- ZnO spintronics and nanowire devices (2006) (128)
- “Hidden hydrogen” in as-grown ZnO (2004) (128)
- Electrical detection of immobilized proteins with ungated AlGaN∕GaN high-electron-mobility Transistors (2005) (128)
- Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors (2010) (126)
- High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3 (2017) (126)
- Oxygen and zinc vacancies in as-grown ZnO single crystals (2009) (125)
- Pt∕ZnO nanowire Schottky diodes (2004) (125)
- Depth and thermal stability of dry etch damage in GaN Schottky diodes (1999) (123)
- HIGH-DENSITY PLASMA ETCHING OF COMPOUND SEMICONDUCTORS (1997) (123)
- Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN∕GaN high electron mobility transistors (2007) (120)
- 2300V Reverse Breakdown Voltage Ga2O3 Schottky Rectifiers (2018) (119)
- High performance indium gallium zinc oxide thin film transistors fabricated on polyethylene terephthalate substrates (2008) (115)
- Flexible graphene-based chemical sensors on paper substrates. (2013) (113)
- Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors (2008) (113)
- Oxygen sensors made by monolayer graphene under room temperature (2011) (113)
- Damage to epitaxial GaN layers by silicon implantation (1996) (112)
- Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN (1994) (112)
- Gallium Nitride Processing for Electronics, Sensors and Spintronics (2006) (111)
- Wide bandgap GaN-based semiconductors for spintronics (2004) (110)
- Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes (2004) (109)
- Hydrogen and ozone gas sensing using multiple ZnO nanorods (2005) (108)
- Carbon doping of III–V compounds grown by MOMBE (1990) (107)
- UV photoresponse of single ZnO nanowires (2005) (107)
- CCl4 doping of GaN grown by metalorganic molecular beam epitaxy (1995) (107)
- GaN and related materials II (2000) (107)
- dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors (2001) (105)
- Hydrogen detection using platinum coated graphene grown on SiC (2011) (104)
- MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors (2004) (103)
- Room temperature hydrogen detection using Pd-coated GaN nanowires (2008) (101)
- High temperature electron cyclotron resonance etching of GaN, InN, and AlN (1995) (100)
- Ferromagnetism in Mn- and Co-implanted ZnO nanorods (2003) (99)
- High-Performance Indium Gallium Zinc Oxide Transparent Thin-Film Transistors Fabricated by Radio-Frequency Sputtering (2008) (99)
- Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature (2010) (99)
- GaN and ZnO-based materials and devices (2012) (98)
- Functionalizing Zn- and O-terminated ZnO with thiols (2007) (97)
- Materials and reliability handbook for semiconductor optical and electron devices (2013) (96)
- Gd2O3/GaN metal-oxide-semiconductor field-effect transistor (2000) (96)
- Prostate specific antigen detection using AlGaN∕GaN high electron mobility transistors (2007) (95)
- Plasma etching of III–V semiconductors in CH4/H2/Ar electron cyclotron resonance discharges (1990) (95)
- Ion Implantation in GaAs (1991) (95)
- Electrical detection of deoxyribonucleic acid hybridization with AlGaN/GaN high electron mobility transistors (2006) (95)
- Implant‐induced high‐resistivity regions in InP and InGaAs (1989) (95)
- Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposure (1986) (95)
- Phosphorus doped ZnO light emitting diodes fabricated via pulsed laser deposition (2008) (94)
- Electrical and structural analysis of high-dose Si implantation in GaN (1997) (94)
- Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors (2003) (94)
- Dry Etching of Electronic Oxides, Polymers, and Semiconductors (2005) (93)
- Improved performance of quantum well infrared photodetectors using random scattering optical coupling (1994) (92)
- Thermal Stability of Ion-implanted Hydrogen in ZnO (2002) (92)
- Hydrogen passivation of gold-related deep levels in silicon (1982) (92)
- Single Wall Carbon Nanotubes for p-Type Ohmic Contacts to GaN Light-Emitting Diodes (2004) (92)
- Magnetic and structural properties of Co, Cr, V ion-implanted GaN (2003) (91)
- Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy (1993) (91)
- Ferromagnetism in Co- and Mn-doped ZnO (2003) (90)
- Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes (2002) (90)
- Advances in ZnO-based materials for light emitting diodes (2014) (89)
- GaN electronics for high power, high temperature applications (2000) (89)
- AlGaN/GaN-based metal-oxide semiconductor diode-based hydrogen gas sensor (2004) (87)
- Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors (2016) (87)
- Radiation damage effects in Ga2O3 materials and devices (2019) (87)
- Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage (2001) (86)
- Patterning of AlN, InN, and GaN in KOH‐based solutions (1996) (86)
- Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers (2002) (86)
- Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO (2004) (86)
- Hydrogen sensing with Pt-functionalized GaN nanowires (2009) (85)
- Indication of hysteresis in AlMnN (2003) (85)
- Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs (2001) (84)
- Zn0.9Mg0.1O∕ZnOp–n junctions grown by pulsed-laser deposition (2004) (84)
- Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors: (2013) (84)
- High Breakdown Voltage (−201) $\beta $ -Ga2O3 Schottky Rectifiers (2017) (84)
- Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices (2009) (84)
- ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY (1993) (83)
- Room temperature operation of submicrometre radius disk laser (1993) (83)
- Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity (2016) (83)
- High voltage GaN Schottky rectifiers (1999) (82)
- Passivation of Si donors and DX centers in AlGaAs by hydrogen plasma exposure (1987) (81)
- Sputtered AlN encapsulant for high‐temperature annealing of GaN (1996) (81)
- Plasma and wet chemical etching of In0.5Ga0.5P (1992) (81)
- Dry etch damage in InN, InGaN, and InAlN (1995) (80)
- Vibrational characteristics of acceptor‐hydrogen complexes in silicon (1987) (80)
- Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors. (2017) (80)
- Detection of hydrogen at room temperature with catalyst-coated multiple ZnO nanorods (2005) (80)
- Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane (1990) (80)
- High mobility InGaZnO4 thin-film transistors on paper (2009) (80)
- Stability of carbon and beryllium‐doped base GaAs/AlGaAs heterojunction bipolar transistors (1991) (79)
- Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor (1999) (79)
- Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaN (1999) (79)
- Synthesis and microstructure of vertically aligned ZnO nanowires grown by high-pressure-assisted pulsed-laser deposition (2008) (79)
- Proton implantation effects on electrical and recombination properties of undoped ZnO (2003) (78)
- Inductively coupled plasma-induced etch damage of GaN p-n junctions (2000) (77)
- Magnetization dependence on electron density in epitaxial ZnO thin films codoped with Mn and Sn (2005) (76)
- Deep level, quenched-in defects in silicon doped with gold, silver, iron, copper or nickel (1983) (76)
- Optical and magnetic properties of Eu-doped GaN (2006) (75)
- Comparison of GaN p-i-n and Schottky rectifier performance (2001) (75)
- Carrier concentration dependence of Ti/Al/Pt/Au contact resistance on n-type ZnO (2004) (74)
- Magnetic and structural properties of Fe, Ni, and Mn-implanted SiC (2002) (74)
- Wet chemical etching survey of III-nitrides (1997) (73)
- Fast electrical detection of Hg(II) ions with AlGaN∕GaN high electron mobility transistors (2007) (73)
- Band gap properties of Zn1−xCdxO alloys grown by molecular-beam epitaxy (2006) (73)
- Low temperature (<100 °C) patterned growth of ZnO nanorod arrays on Si (2007) (73)
- Comparison of MOS and Schottky W/Pt–GaN diodes for hydrogen detection (2005) (73)
- Ultrahigh Si+ implant activation efficiency in GaN using a high-temperature rapid thermal process system (1998) (72)
- Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes (2003) (72)
- pH sensor using AlGaN∕GaN high electron mobility transistors with Sc2O3 in the gate region (2007) (72)
- Hydrogen passivation of acceptors in p‐InP (1989) (72)
- Nitride and oxide semiconductor nanostructured hydrogen gas sensors (2010) (72)
- Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage (2018) (72)
- Mechanical properties of ZnO epitaxial layers grown on a- and c-axis sapphire (2005) (71)
- Low-voltage indium gallium zinc oxide thin film transistors on paper substrates (2010) (71)
- Mining for high Tc ferromagnetism in ion-implanted dilute magnetic semiconductors (2004) (71)
- Thermal stability of implanted dopants in GaN (1995) (71)
- Electrical and structural changes in the near surface of reactively ion etched InP (1989) (71)
- Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors (2002) (70)
- AlGaN/GaN HEMT based liquid sensors (2004) (70)
- Annealing of ion implanted gallium nitride (1998) (70)
- The promise and perils of wide-bandgap semiconductor nanowires for sensing, electronic, and photonic applications. (2007) (70)
- Hydrogen injection and neutralization of boron acceptors in silicon boiled in water (1986) (69)
- Etching of InP at ≳1 μm/min in Cl2/Ar plasma chemistries (1996) (69)
- Room-Temperature Hydrogen-Selective Sensing Using Single Pt-Coated ZnO Nanowires at Microwatt Power Levels (2005) (68)
- Electrical and optical properties of Cr and Fe implanted n-GaN (2003) (68)
- Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide (2002) (68)
- High quality AlxGa1−xAs grown by organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor (1991) (68)
- Stable room temperature deposited amorphous InGaZnO4 thin film transistors (2008) (67)
- HYDROGEN DIFFUSION IN CRYSTALLINE SEMICONDUCTORS (1991) (67)
- The electrical properties of deep copper‐ and nickel‐related centers in silicon (1983) (67)
- Hydrogenation of GaN, AlN, and InN (1994) (67)
- Effect of Gd Implantation on the Structural and Magnetic Properties of GaN and AlN (2006) (66)
- Improved Pt∕Au and W∕Pt∕Au Schottky contacts on n-type ZnO using ozone cleaning (2004) (66)
- Hydrogen in carbon‐doped GaAs grown by metalorganic molecular beam epitaxy (1990) (66)
- Room‐temperature lasing action in In0.51Ga0.49P/In0.2Ga0.8As microcylinder laser diodes (1993) (65)
- Temperature-Dependent Characteristics of Ni/Au and Pt/Au Schottky Diodes on β-Ga2O3 (2017) (65)
- Formation of thermally stable high-resistivity AlGaAs by oxygen implantation (1988) (65)
- Vertical and lateral GaN rectifiers on free-standing GaN substrates (2001) (65)
- Structure and vibrational properties of the dominant O-H center in β-Ga2O3 (2018) (64)
- Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications (2005) (64)
- Bulk acceptor compensation produced in p‐type silicon at near‐ambient temperatures by a H2O plasma (1984) (63)
- Use of ion implantation to facilitate the discovery and characterization of ferromagnetic semiconductors (2002) (63)
- Inversion behavior in Sc2O3/GaN gated diodes (2002) (63)
- GaN and Related Materials for Device Applications (1997) (63)
- Role of growth conditions on magnetic properties of AlCrN grown by molecular beam epitaxy (2005) (63)
- Electrical transport properties of single GaN and InN nanowires (2006) (63)
- Oxygen diffusion into SiO2-capped GaN during annealing (1999) (62)
- Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO (2003) (62)
- GaN n- and p-type Schottky diodes: Effect of dry etch damage (2000) (61)
- Fast neutron irradiation effects in n-GaN (2007) (61)
- Hydrogen-sensitive GaN Schottky diodes (2003) (61)
- Dry etching of thin-film InN, AlN and GaN (1993) (60)
- Ar+‐ion milling characteristics of III‐V nitrides (1994) (60)
- Ion implantation damage and annealing in InAs, GaSb, and GaP (1988) (60)
- Improved performance of carbon-doped GaAs base heterojunction bipolar transistors through the use of InGaP (1992) (59)
- Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching (2017) (59)
- Magnetic properties of Co- and Mn-implanted BaTiO3, SrTiO3 and KTaO3 (2003) (59)
- Er doping of AlN during growth by metalorganic molecular beam epitaxy (1996) (59)
- Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3 (2018) (59)
- Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in NF3 chemistries (1998) (59)
- 300°C GaN/AlGaN Heterojunction Bipolar Transistor (1998) (59)
- Transport properties of InN nanowires (2005) (58)
- Dry etch chemistries for TiO2 thin films (2001) (58)
- ICP etching of SiC (1998) (58)
- Energy band offsets of dielectrics on InGaZnO4 (2017) (57)
- Effect of Coated Platinum Thickness on Hydrogen Detection Sensitivity of Graphene-Based Sensors (2011) (57)
- Ultradeep, low-damage dry etching of SiC (2000) (57)
- Ga2O3 Schottky rectifiers with 1 ampere forward current, 650 V reverse breakdown and 26.5 MW.cm-2 figure-of-merit (2018) (56)
- Electrical properties of bulk semi-insulating β-Ga2O3(Fe) (2018) (56)
- Electrical and optical properties of Fe-doped semi-insulating GaN templates (2003) (56)
- Passivation of carbon‐doped GaAs layers by hydrogen introduced by annealing and growth ambients (1993) (55)
- Selective inductively coupled plasma etching of group-III nitrides in Cl2- and BCl3-based plasmas (1998) (55)
- COMPARISON OF DRY ETCH TECHNIQUES FOR GAN (1996) (55)
- Transport properties of p-type phosphorus-doped (Zn,Mg)O grown by pulsed-laser deposition (2005) (55)
- Chemical Etch Characteristics of N-Face and Ga-Face GaN by Phosphoric Acid and Potassium Hydroxide Solutions (2011) (55)
- Optical and magnetic properties of ZnO bulk crystals implanted with Cr and Fe (2004) (55)
- Wireless hydrogen sensor network using AlGaN/GaN high electron mobility transistor differential diode sensors (2008) (54)
- Properties of Co-, Cr-, or Mn-implanted AlN (2003) (54)
- Creation of high resistivity GaN by implantation of Ti, O, Fe, or Cr (2000) (54)
- Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas (2000) (54)
- Effect of high-density plasma etching on the optical properties and surface stoichiometry of ZnO (2002) (54)
- Room temperature magnetism in GaMnP produced by both ion implantation and molecular-beam epitaxy (2002) (54)
- Characterization of high dose Fe implantation into p-GaN (2001) (53)
- Comparison of Ni/Au, Pd/Au, and Cr/Au Metallizations for Ohmic Contacts to p-GaN (1996) (53)
- Enzyme-based lactic acid detection using AlGaN /GaN high electron mobility transistors with ZnO nanorods grown on the gate region (2008) (53)
- Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides (1996) (53)
- REVIEW OF RECENT ADVANCES IN TRANSITION AND LANTHANIDE METAL–DOPED GaN AND ZnO (2009) (53)
- Pt-coated InN nanorods for selective detection of hydrogen at room temperature (2005) (53)
- High temperature surface degradation of III–V nitrides (1996) (53)
- ICl/Ar electron cyclotron resonance plasma etching of III–V nitrides (1996) (53)
- Inductively Coupled Plasma Etching of III-V Semiconductors in BCl(3)-Based Chemistries: Part 1: GaAs, GaN, GaP, GaSb and AlGaAs (1998) (53)
- Electrical detection of kidney injury molecule-1 with AlGaN∕GaN high electron mobility transistors (2007) (52)
- Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors (2006) (52)
- Growth of InN for ohmic contact formation by electron cyclotron resonance metalorganic molecular‐beam epitaxy (1993) (52)
- c-erbB-2 sensing using AlGaN∕GaN high electron mobility transistors for breast cancer detection (2008) (52)
- Toward conductive traces: Dip Pen Nanolithography® of silver nanoparticle-based inks (2008) (52)
- Direct and indirect excitation of Er3+ ions in Er: AIN (1997) (51)
- Comparison of Pt/GaN and Pt/4H-SiC gas sensors (2003) (51)
- Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors (2005) (51)
- Low Temperature Silicon Nitride and Silicon Dioxide Film Processing by Inductively Coupled Plasma Chemical Vapor Deposition (2000) (51)
- Shallow donor formation in phosphorus-doped ZnO thin films (2004) (51)
- Implant Isolation of GaAs (1988) (51)
- Evidence for the existence of a negatively charged hydrogen species in plasma‐treated n‐type Si (1990) (50)
- Effect of Mn concentration on the structural, optical, and magnetic properties of GaMnN (2004) (50)
- Antiphase domains in GaAs grown by metalorganic chemical vapor deposition on silicon‐on‐insulator (1988) (50)
- REACTIVE ION ETCHING OF III–V SEMICONDUCTORS (1994) (50)
- Characteristics of unannealed ZnMgO /ZnO p-n junctions on bulk (100) ZnO substrates (2005) (50)
- Determination of MgO/GaN heterojunction band offsets by x-ray photoelectron spectroscopy (2006) (50)
- Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy (2002) (50)
- Development of enhancement mode AIN/GaN high electron mobility transistors (2009) (50)
- High etch rates of GaN with magnetron reactive ion etching in BCl3 plasmas (1995) (50)
- Comparison of dry etch chemistries for SiC (1997) (49)
- Comparison of plasma etch techniques for III–V nitrides (1998) (49)
- Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes (2010) (49)
- Detection of hydrogen with SnO2-coated ZnO nanorods (2007) (49)
- Real‐time monitoring of low‐temperature hydrogen plasma passivation of GaAs (1990) (49)
- SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications (2012) (49)
- ZnO and Related Materials for Sensors and Light-Emitting Diodes (2008) (49)
- Hydrogenation of GaAs on Si: Effects on diode reverse leakage current (1987) (49)
- Neutron irradiation effects on electrical properties and deep-level spectra in undoped n-AlGaN∕GaN heterostructures (2005) (49)
- Low Hg(II) ion concentration electrical detection with AlGaN/GaN high electron mobility transistors (2008) (49)
- Measurement of Zn0.95Cd0.05O∕ZnO (0001) heterojunction band offsets by x-ray photoelectron spectroscopy (2005) (49)
- Properties of highly Cr-doped AlN (2004) (49)
- Minority‐carrier‐enhanced reactivation of hydrogen‐passivated Mg in GaN (1996) (49)
- Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes (2009) (49)
- Ion Milling Damage in InP and GaAs (1990) (48)
- Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3 (2018) (48)
- High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors (2002) (48)
- Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure (2010) (48)
- InGaP/GaAs Based Single and Double Heterojunction Bipolar Transistors Grown by MOMBE (1992) (48)
- Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si (2018) (48)
- Injection and drift of a positively charged hydrogen species in p‐type GaAs (1990) (48)
- Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors (2013) (48)
- Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors (2007) (48)
- Magnetic Properties of Fe- and Mn-Implanted SiC (2001) (48)
- Smooth, low‐bias plasma etching of InP in microwave Cl2/CH4/H2 mixtures (1992) (47)
- Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors (2016) (47)
- Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar (1990) (47)
- Electrical properties of undoped bulk ZnO substrates (2006) (47)
- Experimental study of graphitic nanoribbon films for ammonia sensing (2011) (47)
- Nucleation control for ZnO nanorods grown by catalyst-driven molecular beam epitaxy (2007) (47)
- Ti /Au n-type Ohmic contacts to bulk ZnO substrates (2005) (47)
- Spintronics device concepts (2005) (47)
- Wet chemical etching of AlN and InAlN in KOH solutions (1996) (46)
- CO2 detection using polyethylenimine/starch functionalized AlGaN∕GaN high electron mobility transistors (2008) (46)
- Carrier concentration dependence of acceptor activation energy in p-type ZnO (2006) (46)
- Growth of ZnO Thin Films on C-Plane AL2O3 by Molecular Beam Epitaxy Using Ozone as an Oxygen Source (2006) (46)
- Pt/Ti ohmic contacts to ultrahigh carbon-doped p-GaAs formed by rapid thermal processing (1990) (46)
- Al composition dependence of breakdown voltage in AlxGa1−xN Schottky rectifiers (2000) (46)
- Deep level transient spectroscopy in III-Nitrides: Decreasing the effects of series resistance (2015) (46)
- High rate dry etching of InGaP in BCl3 plasma chemistries (1995) (46)
- Electrical and optical properties of GaN films implanted with Mn and Co (2002) (46)
- Hydrogen-decorated lattice defects in proton implanted GaN (1998) (46)
- Reactive ion etching of GaAs with CCl2F2:O2: Etch rates, surface chemistry, and residual damage (1989) (45)
- Ferromagnetism in GaN and SiC doped with transition metals (2003) (45)
- Ultraviolet photoluminescence from Gd-implanted AlN epilayers (2006) (45)
- Electrical activity of defects in molecular beam epitaxially grown GaAs on Si and its reduction by rapid thermal annealing (1987) (45)
- Hydrogen incorporation, diffusivity and evolution in bulk ZnO (2003) (45)
- Dip Pen Nanolithography of Conductive Silver Traces (2010) (45)
- Photoluminescence study of the shallow donor neutralization in GaAs(Si) by atomic hydrogen (1986) (45)
- Etch characteristics of HfO2 films on Si substrates (2002) (45)
- Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length (2018) (45)
- Spatial variations of doping and lifetime in epitaxial laterally overgrown GaN (2007) (45)
- Robust detection of hydrogen using differential AlGaN∕GaN high electron mobility transistor sensing diodes (2006) (45)
- Contacts to p-type ZnMgO (2004) (45)
- Implant isolation of GaAs‐AlGaAs heterojunction bipolar transistor structures (1990) (45)
- Sensitivity of Pt/ZnO schottky diode characteristics to hydrogen (2004) (45)
- Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs (2002) (45)
- Effects of Photoelectrochemical Etching of N-Polar and Ga-Polar Gallium Nitride on Sapphire Substrates (2010) (44)
- Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current (2018) (44)
- Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane (2005) (44)
- Strong surface disorder and loss of N produced by ion bombardment of GaN (2000) (44)
- Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing (2002) (44)
- Comparison of hole traps in n-GaN grown by hydride vapor phase epitaxy, metal organic chemical vapor deposition, and epitaxial lateral overgrowth (2011) (44)
- Effects of defects and doping on wide band gap ferromagnetic semiconductors (2003) (44)
- Thermal stability of W and WSix contacts on p-GaN (1998) (43)
- High energy proton irradiation effects on SiC Schottky rectifiers (2002) (43)
- 1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers (2017) (43)
- Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics (1998) (43)
- Charge carrier and spin doping in ZnO thin films (2006) (42)
- Optimization of two dimensional gratings for very long wavelength quantum well infrared photodetectors (1994) (42)
- The self-trapping of hydrogen in semiconductors (1988) (42)
- Reactive ion etching induced damage in GaAs and AlGaAs using C2H6/H2/Ar or CCl2F2/O2 gas mixtures (1989) (42)
- Growth and Characterization of GaN Nanowires for Hydrogen Sensors (2009) (42)
- Reliability studies of AlGaN/GaN high electron mobility transistors (2013) (42)
- Implantation and redistribution of dopants and isolation species in GaN and related compounds (1995) (42)
- Studies of minority carrier diffusion length increase in p-type ZnO:Sb (2006) (42)
- Dielectric passivation effects on ZnO light emitting diodes (2008) (42)
- Relative merits of Cl2 and CO/NH3 plasma chemistries for dry etching of magnetic random access memory device elements (1999) (42)
- Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers (2003) (42)
- Annealing of dry etch damage in metallized and bare (-201) Ga2O3 (2017) (42)
- Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes (2017) (42)
- New applications advisable for gallium nitride (2002) (42)
- Schottky diode measurements of dry etch damage in n- and p-type GaN (2000) (41)
- Botulinum toxin detection using AlGaN∕GaN high electron mobility transistors (2008) (41)
- Properties of titanium nitride thin films deposited by rapid‐thermal‐low‐pressure‐metalorganic‐chemical‐vapor‐deposition technique using tetrakis (dimethylamido) titanium precursor (1991) (41)
- Hydrogen passivation of copper‐related defects in germanium (1982) (41)
- Editors' Choice—Hydrogen Centers in β-Ga2O3: Infrared Spectroscopy and Density Functional Theory (2019) (41)
- Hydrogen passivation of a bulk donor defect (Ec −0.36 eV) in GaAs (1982) (41)
- Hydrogen passivation of Ca acceptors in GaN (1996) (41)
- UV ozone treatment for improving contact resistance on graphene (2012) (41)
- Reactive ion etching of GaAs, AlGaAs, and GaSb in Cl2 and SiCl4 (1990) (41)
- Thermal stability of dopant‐hydrogen pairs in GaAs (1991) (41)
- Magnetic and structural characterization of Mn-implanted, single-crystal ZnGeSiN2 (2002) (41)
- Magnetic properties of P-type GaMnP grown by molecular-beam epitaxy (2001) (41)
- Band-edge electroluminescence from N+-implanted bulk ZnO (2006) (41)
- Band alignment of Al 2 O 3 with (-201) β-Ga 2 O 3 (2017) (41)
- Ion implantation and rapid thermal processing of Ill-V nitrides (1996) (40)
- Carbon in GaAs: implantation and isolation characteristics (1989) (40)
- Minority carrier transport in p-type Zn0.9Mg0.1O doped with phosphorus (2005) (40)
- Reactive ion etching of InP, InGaAs, InAlAs: Comparison of C2H6/H2 with CCl2F2/O2 (1990) (40)
- A comparative study of wet etching and contacts on (2¯01) and (010) oriented β-Ga2O3 (2018) (40)
- Thickness dependence of material quality in GaAs‐on‐Si grown by metalorganic chemical vapor deposition (1988) (40)
- Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au (2017) (40)
- High-density plasma etch selectivity for the III–V nitrides (1998) (40)
- Degradation Mechanisms for GaN and GaAs High Speed Transistors (2012) (40)
- Two-Dimensionally Layered p-Black Phosphorus/n-MoS2/p-Black Phosphorus Heterojunctions. (2018) (39)
- Wireless Detection System for Glucose and pH Sensing in Exhaled Breath Condensate Using AlGaN/GaN High Electron Mobility Transistors (2010) (39)
- Defect-enhanced ferromagnetism in Gd- and Si-coimplanted GaN (2010) (39)
- Design of edge termination for GaN power Schottky diodes (2005) (39)
- Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate (2010) (39)
- High rate dry etching of Ni0.8Fe0.2 and NiFeCo (1997) (39)
- Magnetization dependence on carrier doping in epitaxial ZnO thin films co-doped with Mn and P (2007) (39)
- Passivation in silicon (1988) (39)
- Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3 (2002) (39)
- Electric-Field-Driven Degradation in off-State Step-Stressed AlGaN/GaN High-Electron Mobility Transistors (2011) (39)
- Characterization of bulk GaN rectifiers for hydrogen gas sensing (2005) (38)
- Reversible changes in doping of InGaAlN alloys induced by ion implantation or hydrogenation (1993) (38)
- Carbon implantation in InP (1989) (38)
- Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility Transistors (2002) (38)
- Si-implantation activation annealing of GaN up to 1400°C (1998) (38)
- Ion implantation doping and isolation of III–V semiconductors (1991) (38)
- Selective-hydrogen sensing at room temperature with Pt-coated InN nanobelts (2008) (37)
- Relationship between secondary defects and electrical activation in ion‐implanted, rapidly annealed GaAs (1986) (37)
- Effect of source chemistry and growth parameters on AlGaAs grown by metalorganic molecular beam epitaxy (1991) (37)
- Photoluminescence study of Er-doped AlN (1997) (37)
- Donor nonuniformity in undoped and Si doped n-GaN prepared by epitaxial lateral overgrowth (2008) (37)
- Improved oxide passivation of AlGaN∕GaN high electron mobility transistors (2005) (37)
- High Quality P‐Type GaN Deposition on c‐Sapphire Substrates in a Multiwafer Rotating‐Disk Reactor (1995) (37)
- THERMAL STABILITY OF TI/PT/AU NONALLOYED OHMIC CONTACTS ON INN (1994) (37)
- Dry patterning of InGaN and InAlN (1994) (37)
- AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress (2011) (37)
- Metal Based Thin Films for Electronics (2006) (37)
- Detection of halide ions with AlGaN∕GaN high electron mobility transistors (2005) (37)
- Effect of surface treatments on electrical properties of β-Ga2O3 (2018) (37)
- InP HBTs Growth, Processing, and Applications (1995) (37)
- Hydrogen Incorporation in Crystalline Semiconductors (1992) (37)
- Material‐dependent amorphization and epitaxial crystallization in ion‐implanted AlAs/GaAs layer structures (1989) (37)
- Electrical and structural properties of InxGa1−xN on GaAs (1995) (37)
- Deep hole traps in undoped n-GaN films grown by hydride vapor phase epitaxy (2014) (36)
- Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors (2003) (36)
- GaAs-AlGaAs HBT with carbon doped base layer grown by MOMBE (1990) (36)
- Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization (2003) (36)
- Thermal degradation of electrical properties and morphology of bulk single-crystal ZnO surfaces (2004) (36)
- Carrier concentration dependence of Ti∕Au specific contact resistance on n-type amorphous indium zinc oxide thin films (2008) (36)
- Low-temperature-fabricated InGaZnO4 thin film transistors on polyimide clean-room tape (2008) (36)
- Fabrication of Hybrid n-ZnMgO/n-ZnO/ p-AlGaN/ p-GaN Light-Emitting Diodes (2005) (36)
- Hydrogen in compound semiconductors (1994) (36)
- Incorporation of carbon in heavily doped AlxGa1−xAs grown by metalorganic molecular beam epitaxy (1990) (36)
- Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations (2008) (35)
- Schottky rectifiers fabricated on free-standing GaN substrates (2001) (35)
- Comparison of CH4/H2/Ar reactive ion etching and electron cyclotron resonance plasma etching of In-based III-V alloys (1991) (35)
- Redistribution of Zn in GaAs-AlGaAs heterojunction bipolar transistor structures (1990) (35)
- Proton implantation effects on electrical and luminescent properties of p-GaN (2003) (35)
- Contact resistivity and transport mechanisms in W contacts to p- and n-GaN (2000) (35)
- On the origin of spin loss in GaMnN/InGaN light-emitting diodes (2004) (35)
- Artificial Neuron and Synapse Devices Based on 2D Materials. (2021) (35)
- Nitrogen and fluorine ion implantation in InxGa1−xN (1995) (35)
- Luminescence characteristics of Er-doped GaN semiconductor thin films (2000) (34)
- Effect of additive noble gases in chlorine-based inductively coupled plasma etching of GaN, InN, and AlN (1999) (34)
- Effect of dry etching on surface properties of III-nitrides (1997) (34)
- Band offsets in ITO/Ga 2 O 3 heterostructures (2017) (34)
- Investigation of n‐ and p‐type doping of GaN during epitaxial growth in a mass production scale multiwafer‐rotating‐disk reactor (1995) (34)
- Dry etching of GaN and related materials: comparison of techniques (1998) (34)
- Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor (2011) (34)
- Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors (2003) (34)
- Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors (2012) (34)
- High density plasma via hole etching in SiC (2001) (34)
- Single-electron capacitance spectroscopy of a few electron box (1993) (34)
- Fermi level pinning in heavily neutron-irradiated GaN (2006) (34)
- Superparamagnetism in Co-ion-implanted anatase TiO2 thin films and effects of postannealing (2003) (34)
- Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors (2010) (34)
- A unified global self-consistent model of a capacitively and inductively coupled plasma etching system (2000) (34)
- Temperature dependence and current transport mechanisms in AlxGa1−xN Schottky rectifiers (2000) (34)
- Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE (2001) (34)
- Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy (2011) (34)
- Alpha particle detection with GaN Schottky diodes (2009) (34)
- Fermi level dependence of hydrogen diffusivity in GaN (2001) (33)
- SiO2 / Gd2 O 3 / GaN Metal Oxide Semiconductor Field Effect Transistors (2001) (33)
- GaN-based ultraviolet light-emitting diodes with AuCl₃-doped graphene electrodes. (2013) (33)
- Comparison of gallium and arsenic precursors for GaAs carbon doping by organometallic vapor phase epitaxy using CCl4 (1992) (33)
- Temperature dependence of GaN high breakdown voltage diode rectifiers (2000) (33)
- Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors (2008) (33)
- Improvement in bias stability of amorphous-InGaZnO4 thin film transistors with SiOx passivation layers (2010) (33)
- Comparison of H+ and He+ implant isolation of GaAs‐based heterojunction bipolar transistors (1995) (33)
- Alternative group V sources for growth of GaAs and AlGaAs by MOMBE (CBE) (1992) (33)
- Kinetic model for hydrogen reactions in boron‐doped silicon (1993) (33)
- Plasma chemistries for high density plasma etching of SiC (1999) (33)
- High-Power GaN Electronic Devices (2002) (33)
- Hydrogen in Crystalline Silicon (1985) (33)
- Stable hydrogen sensors from AlGaN∕GaN heterostructure diodes with TiB2-based Ohmic contacts (2007) (33)
- Via-hole etching for SiC (1999) (33)
- Outdiffusion of deuterium from GaN, AlN, and InN (1995) (33)
- Radiation Effects in GaN-Based High Electron Mobility Transistors (2015) (33)
- Neutron irradiation effects in p‐GaN (2006) (33)
- Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency (2011) (32)
- High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes (2005) (32)
- Selfaligned AlGaAs/GaAs HBT grown by MOMBE (1991) (32)
- Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions (2008) (32)
- Thermal stability of CdZnO∕ZnO multi-quantum-wells (2007) (32)
- Surface and bulk leakage currents in high breakdown GaN rectifiers (2000) (32)
- Damage introduction in InP and InGaAs during Ar and H2 plasma exposure (1992) (32)
- Characterization of High Dose Mn, Fe, and Ni implantation into p-GaN (2002) (32)
- Ion implantation of Si, Mg and C into Al0.12Ga0.88N (1997) (32)
- Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers (2017) (32)
- New Dielectrics for Gate Oxides and Surface Passivation on GaN (2005) (32)
- RF Characteristics of Room-Temperature-Deposited, Small Gate Dimension Indium Zinc Oxide TFTs (2008) (31)
- Temperature-Dependent Electrical Characteristics of β-Ga2O3Diodes with W Schottky Contacts up to 500°C (2018) (31)
- Rapid annealing of GaAs: Uniformity and temperature dependence of activation (1986) (31)
- Electrical properties and radiation detector performance of free-standing bulk n-GaN (2012) (31)
- Effect of source field plate on the characteristics of off-state, step-stressed AlGaN/GaN high electron mobility transistors (2011) (31)
- Comparison of inductively coupled plasma Cl2 and Cl4/H2 etching of III-nitrides (1998) (31)
- Interaction of Be and O in GaAs (1989) (31)
- Copper Dry Etching with Cl2 / Ar Plasma Chemistry (1998) (31)
- GROWTH OF ALN BY METALORGANIC MOLECULAR BEAM EPITAXY (1995) (31)
- Unintentional hydrogenation of GaN and related alloys during processing (1996) (31)
- Detection of chloride ions using an integrated Ag∕AgCl electrode with AlGaN∕GaN high electron mobility transistors (2008) (31)
- Dry processed, through‐wafer via holes for GaAs power devices (1993) (31)
- Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays (2019) (31)
- Silicon-based spintronics (2004) (31)
- Role of annealing conditions and surface treatment on ohmic contacts to p-GaN and p-Al0.1Ga0.9N/GaN superlattices (2001) (31)
- Measurement of electron densities in electron cyclotron resonance plasmas for etching of III‐V semiconductors (1991) (30)
- Dry etch processing of GaAs/AlGaAs high electron mobility transistor structures (1991) (30)
- Band offsets in the Sc2O3∕GaN heterojunction system (2006) (30)
- Highly sensitive AlGaN/GaN diode-based hydrogen sensors using platinum nanonetworks (2012) (30)
- Vertical Geometry, 2-A Forward Current Ga2O3 Schottky Rectifiers on Bulk Ga2O3 Substrates (2018) (30)
- Doped nanostructures. (2010) (30)
- Hydrogen Injection Into P-Type Silicon By Chemical Etching (1987) (30)
- AlGaN/GaN-based diodes and gateless HEMTs for gas and chemical sensing (2005) (30)
- Effect of Nucleation Layer on the Magnetic Properties of GaMnN (2004) (30)
- Effect of crystal stoichiometry on activation efficiency in Si implanted, rapid thermal annealed GaAs (1986) (30)
- Effect of growth conditions on the magnetic characteristics of GaGdN (2006) (30)
- Selective Detection of Hg"II… Ions from Cu"II… and Pb"II… Using AlGaN/GaN High Electron Mobility Transistors (2007) (30)
- Comparison of ZnO metal–oxide–semiconductor field effect transistor and metal–semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition (2005) (30)
- Microwave CI2/H2 discharges for high rate etching of InP (1992) (30)
- Use of InN for Ohmic contacts on GaAs/AlGaAs heterojunction bipolar transistors (1995) (30)
- Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors (2013) (30)
- Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition (2007) (30)
- Low specific contact resistance Ti∕Au contacts on ZnO (2006) (30)
- Defects in N, O and N, Zn implanted ZnO bulk crystals (2013) (30)
- Plasma damage in p-GaN (2000) (30)
- Effect of ozone cleaning on Pt/Au and W/Pt/Au Schottky contacts to n-type ZnO (2004) (30)
- Indium zinc oxide thin films deposited by sputtering at room temperature (2008) (29)
- Diffusion phenomena and defect generation in rapidly annealed GaAs (1985) (29)
- Behavior of rapid thermal annealed ZnO:P films grown by pulsed laser deposition (2007) (29)
- Hydrogen passivation of deep metal‐related donor centers in germanium (1983) (29)
- Luminescence enhancement in AlN(Er) by hydrogenation (1997) (29)
- High ion density dry etching of compound semiconductors (1996) (29)
- Review of Graphene as a Solid State Diffusion Barrier. (2016) (29)
- Observation of sphere resonance peak in ferromagnetic GaN:Mn (2003) (29)
- Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors (2004) (29)
- Defects at the surface of β-Ga2O3 produced by Ar plasma exposure (2019) (29)
- Rapid Thermal Annealing in GaAs IC Processing (1985) (29)
- Hydrogen plasma treatment of β-Ga2O3: Changes in electrical properties and deep trap spectra (2019) (29)
- Carbon and tin doped npn and pnp AlGaAs/GaAs HBTs grown by MOMBE (1991) (29)
- Dry-etching techniques and chemistries for III–V semiconductors (1991) (29)
- Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire (2019) (28)
- Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctions (2012) (28)
- Characterization of damage in electron cyclotron resonance plasma etched compound semiconductors (1997) (28)
- Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors (2012) (28)
- Neutron Radiation Effects in Epitaxially Laterally Overgrown GaN Films (2007) (28)
- Mechanism for radiative recombination in ZnCdO alloys (2007) (28)
- Conduction and valence band offsets of LaAl2O3 with (−201) β-Ga2O3 (2017) (28)
- Enhanced hot‐electron photoluminescence from heavily carbon‐doped GaAs (1990) (28)
- Properties of Fe-doped semi-insulating GaN structures (2004) (28)
- Effect of inductively coupled plasma damage on performance of GaN–InGaN multiquantum-well light-emitting diodes (2005) (28)
- Real-time, in situ monitoring of GaAs and AlGaAs photoluminescence during plasma processing (1990) (28)
- Characterization of GaAs layers grown directly on Si substrates by metalorganic chemical vapor deposition (1987) (28)
- Formation of p-n homojunctions in n-ZnO bulk single crystals by diffusion from a Zn3P2 source (2005) (28)
- Hydrogen plasma passivation effects on properties of p-GaN (2003) (28)
- Characteristics of III‐V Dry Etching In HBr ‐ Based Discharges (1992) (28)
- ECR plasma etching of chemically vapour deposited diamond thin films (1992) (28)
- High‐rate, anisotropic dry etching of InP in HI‐based discharges (1992) (27)
- Post growth rapid thermal annealing of GaN: The relationship between annealing temperature, GaN crystal quality, and contact-GaN interfacial structure (1997) (27)
- Materials Characterization of WSi Contacts to n+‐GaN as a Function of Rapid Thermal Annealing Temperatures (1997) (27)
- Electrical Properties, Deep Trap and Luminescence Spectra in Semi-Insulating, Czochralski β-Ga2O3 (Mg) (2019) (27)
- High density plasma etching of III–V nitrides (1996) (27)
- High quality amorphous indium zinc oxide thin films synthesized by pulsed laser deposition (2011) (27)
- Hydrogen treatment effect on shallow and deep centers in GaSb (1992) (27)
- The influence of ammonia on rapid-thermal low-pressure metalorganic chemical vapor deposited TiNx films from tetrakis (dimethylamido) titanium precursor onto InP (1992) (27)
- Valence and conduction band offsets in AZO/Ga2O3 heterostructures (2017) (27)
- Properties of Mn-Implanted BaTiO3 , SrTiO3 , and KTaO3 (2003) (27)
- Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors (2000) (27)
- GaN PN junction issues and developments (2000) (27)
- Electrical passivation in hydrogen plasma exposed GaN (1994) (27)
- Chlorine-Based Plasma Etching of GaN (1996) (27)
- Electrical properties, structural properties, and deep trap spectra of thin α-Ga2O3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates (2018) (27)
- Materials Research Society Symposia Proceedings. Volume 59. Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon Held in Boston, Massachusetts on 2-5 December 1985, (1986) (27)
- The search for all-hydride MOMBE: examination of trimethylamine alane, trimethylamine gallane, and arsine (1991) (27)
- Advantages and limitations of MgO as a dielectric for GaN (2003) (27)
- Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes (2008) (27)
- Continuous room-temperature operation of optically pumped InGaAs/InGaAsP microdisk lasers (1998) (26)
- High-power 980-nm AlGaAs/InGaAs strained quantum-well laser grown by OMVPE (1991) (26)
- Hydrogen sensing characteristics of semipolar (112¯2) GaN Schottky diodes (2014) (26)
- Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN (2016) (26)
- Inductively coupled plasma etching of bulk, single-crystal Ga2O3 (2017) (26)
- Effects of high-dose 40 MeV proton irradiation on the electroluminescent and electrical performance of InGaN light-emitting diodes (2004) (26)
- Thermal stability of 2H-implanted n- and p-type GaN (1998) (26)
- Dry etching characteristics of III–V semiconductors in microwave BCl3 discharges (1993) (26)
- Effects of Zn content on structural and transparent conducting properties of indium-zinc oxide films grown by rf magnetron sputtering (2006) (26)
- Anisotropic x-ray absorption effects in the optical luminescence yield of ZnO nanostructures (2006) (26)
- Electrical effects of N2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes (2001) (26)
- Temperature-dependent Cl2/Ar plasma etching of bulk single-crystal ZnO (2003) (26)
- Reduction of sidewall roughness during dry etching of SiO2 (1992) (26)
- Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors (2010) (26)
- SiC via holes by laser drilling (2004) (26)
- Implantation temperature dependence of electrical activation, solubility, and diffusion of implanted Te, Cd, and Sn in GaAs (1989) (26)
- Graphene as a diffusion barrier for Al and Ni/Au contacts on silicon (2012) (26)
- Hydrogen passivation effects in InGaAlP and InGaP (1994) (26)
- Fast detection of a protozoan pathogen, Perkinsus marinus, using AlGaN/GaN high electron mobility transistors (2009) (26)
- Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-raman technique (2006) (26)
- Energy dependence of ion-assisted chemical etch rates in reactive plasmas (2005) (26)
- High rate electron cyclotron resonance etching of GaN, InN, and AlN (1995) (26)
- 10 Gbit/s AlGaAs/GaAs HBT driver IC for lasers or lightwave modulators (1991) (26)
- Perspective : Ga 2 O 3 for ultra-high power recti fi ers and MOSFETS (2018) (26)
- III-V semiconductor device dry etching using ECR discharges (1992) (25)
- Effect of inert gas additive species on Cl 2 high density plasma etching of compound semiconductors (1999) (25)
- Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes (2012) (25)
- Photoluminescence, reflectance, and magnetospectroscopy of shallow excitons in GaN (1997) (25)
- Neutron transmutation doping effects in GaN (2010) (25)
- Development of electron cyclotron resonance and inductively coupled plasma high density plasma etching for patterning of NiFe and NiFeCo (1998) (25)
- Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors (2013) (25)
- Modeling Proton Irradiation in AlGaN/GaN HEMTs: Understanding the Increase of Critical Voltage (2013) (25)
- Electrical Transport Studies of the Hydrogen-Related Compensating Donor in B-Doped Silicon Diodes (1985) (25)
- Characterization of InP/GaAs/Si structures grown by atmospheric pressure metalorganic chemical vapor deposition (1989) (25)
- Effects of channel dimensions on performance of a-InGaZnO4 thin-film transistors (2011) (25)
- GaN/AlGaN HBT fabrication (2000) (25)
- Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments (2017) (25)
- Properties of Au and Ag Schottky diodes prepared on undoped n-ZnO (2003) (25)
- Persistent photoconductivity in p-type ZnO(N) grown by molecular beam epitaxy (2007) (25)
- Heterointerface stability in GaAs‐on‐Si grown by metalorganic chemical vapor deposition (1987) (25)
- Growth and characterization of low defect GaAs by vertical gradient freeze (1987) (25)
- Transition metal ion implantation into AlGaN (2003) (25)
- Dissociation energies of acceptor‐hydrogen complexes in InP (1992) (25)
- Temperature dependence of reactive ion etching of GaAs with CCl2F2:O2 (1989) (25)
- Mask erosion during dry etching of deep features in III-V semiconductor structures (1992) (25)
- Properties of Fe-doped, thick, freestanding GaN crystals grown by hydride vapor phase epitaxy (2007) (25)
- Properties of Mn- and Co-doped bulk ZnO crystals (2005) (25)
- Configurations and Properties of Hydrogen in Crystalline Semiconductors (1991) (25)
- High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature (2011) (25)
- Gateless AlGaN/GaN HEMT response to block co-polymers (2004) (25)
- Simulation of Radiation Effects in AlGaN/GaN HEMTs (2015) (24)
- Influence of high-temperature annealing on the properties of Fe doped semi-insulating GaN structures (2004) (24)
- Implantation characteristics of InSb (1989) (24)
- Comparison of F2 plasma chemistries for deep etching of SiC (2001) (24)
- Deep metal-related centres in germanium (1982) (24)
- Recessed gate GaN field effect transistor (1997) (24)
- Dry Etching of GaAs , AlGaAs , and GaSb in Hydrochlorofluorocarbon Mixtures (1990) (24)
- Inductively coupled high-density plasma-induced etch damage of GaN MESFETs (2000) (24)
- GaN and other materials for semiconductor spintronics (2003) (24)
- Topics in Growth and Device Processing of III-V Semiconductors (1996) (24)
- Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN∕GaN heterostructure field-effect transistors (2005) (24)
- Cl2 and SiCl4 Reactive Ion Etching of In‐Based III–V Semiconductors (1990) (24)
- Epitaxial growth of Sc2O3 films on GaN (2006) (24)
- Reactive Ion Beam Etching of GaAs and Related Compounds in an Inductively Coupled Plasma of Cl(2)-Ar Mixture (1999) (24)
- Proton irradiation of ZnO schottky diodes (2005) (24)
- Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN (2016) (24)
- Extremely High Etch Rates of In‐Based III‐V Semiconductors in BCl3 / N 2 Based Plasma (1996) (24)
- High rate etching of SiC and SiCN in NF3 inductively coupled plasmas (1998) (24)
- Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy (2016) (24)
- Spatial location of the Ec-0.6 eV electron trap in AlGaN/GaN heterojunctions (2014) (24)
- W2B-based rectifying contacts to n-GaN (2005) (24)
- High-Density Plasma-Induced Etch Damage of GaN (1999) (24)
- Nitridization of gallium arsenide surfaces: Effects on diode leakage currents (1984) (24)
- Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers (2003) (23)
- Proton irradiation effects on AlN/GaN high electron mobility transistors (2010) (23)
- Recombination properties of dislocations in GaN (2018) (23)
- GaN-based light-emitting diodes on origami substrates (2012) (23)
- Structural transition and recovery of Ge implanted β-Ga2O3 (2020) (23)
- Defects responsible for lifetime degradation in electron irradiated n-GaN grown by hydride vapor phase epitaxy (2017) (23)
- Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application (1993) (23)
- Improvement of Off-State Stress Critical Voltage by Using Pt-Gated AlGaN/GaN High Electron Mobility Transistors (2011) (23)
- Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates (2004) (23)
- Low-resistance ohmic contacts to p-ZnMgO grown by pulsed-laser deposition (2005) (23)
- GaN, ZnO and InN nanowires and devices. (2008) (23)
- Improvement of ohmic contacts on GaAs with in situ cleaning (1991) (23)
- Deep traps in unpassivated and Sc2O3-passivated AlGaN/GaN high electron mobility transistors (2003) (23)
- Comparison of CH4/H2 and C2H6/H2 inductively coupled plasma etching of ZnO (2006) (23)
- Reactivation of acceptors and trapping of hydrogen in GaN/InGaN double heterostructures (1996) (23)
- Hydrogen Passivation of γ‐Induced Point Defects in Silicon (1982) (22)
- Thermal stability of WSix and W Schottky contacts on n-GaN (2003) (22)
- Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors (2003) (22)
- Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors (2004) (22)
- Effects of high dose Ni, Fe, Co, and Mn implantation into SnO2 (2004) (22)
- 10 MeV electrons irradiation effects in variously doped n-GaN (2011) (22)
- High Current, Common‐Base GaN ‐ AIGaN Heterojunction Bipolar Transistors (1999) (22)
- Semiconductor Device-Based Sensors for Gas, Chemical, and Biomedical Applications (2011) (22)
- Sidewall roughness during dry etching of InP (1991) (22)
- Hydrogenation of gold‐related levels in silicon by electrolytic doping (1984) (22)
- Inductively coupled plasma etchingof in-based compound semiconductorsin CH4/H2/Ar (1998) (22)
- p-type doping of ZnO films and growth of tenary ZnMgO and ZnCdO: application to light emitting diodes and laser diodes (2014) (22)
- Effect of Si Co Doping on Ferromagnetic Properties of GaGdN (2007) (22)
- Effects of high-temperature postannealing on magnetic properties of Co-doped anatase Ti O 2 thin films (2005) (22)
- Carbon implantation in InGaAs and AlInAs (1990) (22)
- The near band-edge emission and photoconductivity response of phosphorus-doped ZnO thin films grown by pulsed laser deposition (2004) (22)
- Annealing temperature dependence of contact resistance and stablity for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO (2003) (22)
- Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors (2017) (22)
- Inductively coupled plasma etching of III–V semiconductors in BCl3-based chemistries: II. InP, InGaAs, InGaAsP, InAs and AlInAs (1999) (22)
- Comparison of stability of WSiX/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation (2004) (22)
- Nanoscale magnetic regions formed in GaN implanted with Mn. (2001) (22)
- Electrical activation of implanted Be, Mg, Zn, and Cd in GaAs by rapid thermal annealing (1985) (22)
- Penetrating living cells using semiconductor nanowires. (2007) (22)
- Electrical and recombination properties and deep traps spectra in MOCVD ELOG GaN layers (2006) (22)
- The role of hydrogen in current-induced degradation of carbon-doped heterojunction bipolar transistors (1995) (22)
- Investigation of wet etching solutions for In0.5Ga0.5P (1995) (22)
- Etching of Ga-based III - V semiconductors in inductively coupled Ar and ?-based plasma chemistries (1997) (22)
- Electrical effects of atomic hydrogen incorporation in GaAs-on-Si (1989) (21)
- Changes in electron and hole traps in GaN-based light emitting diodes from near-UV to green spectral ranges (2017) (21)
- Piezoelectric polarization-induced two dimensional electron gases in AlGaN/GaN heteroepitaxial structures: Application for micro-pressure sensors (2005) (21)
- Band offsets in HfO2/InGaZnO4 heterojunctions (2012) (21)
- Lattice vibrational properties of ZnMgO grown by pulsed laser deposition (2007) (21)
- Electronic states in modulation doped p-AlGaN/GaN superlattices (2001) (21)
- Advanced Processing of GaN for Electronic Devices (2000) (21)
- Hydrogenation of GaAs-on-InP (1990) (21)
- Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs: C (2003) (21)
- Use of MeV O+ ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistors (1992) (21)
- Doping of In0.53Ga0.47As and In0.52Al0.48As by Si+ and Be+ ion implantation (1992) (21)
- SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices (2008) (21)
- AlInAs/InGaAs based heterojunction bipolar transistors fabricated by electron cyclotron resonance etch (1991) (21)
- High current bulk GaN Schottky rectifiers (2002) (21)
- Effect of ECR plasma on the luminescence efficiency of InGaAs and InP (1995) (21)
- Pt-AlGaN/GaN Hydrogen Sensor With Water-Blocking PMMA Layer (2017) (21)
- Long-term stability study of botulinum toxin detection with AlGaN/GaN high electron mobility transistor based sensors (2010) (21)
- Mg doping of InP and InGaAs grown by metalorganic molecular beam epitaxy using bis‐cyclopentadienyl magnesium (1993) (21)
- Cl2-based dry etching of the AlGaInN system in inductively coupled plasmas (1998) (21)
- Reproducible group‐V partial pressure rapid thermal annealing of InP and GaAs (1990) (21)
- ZnO-Based Cyclodextrin Sensor Using Immobilized Polydiacetylene Vesicles (2007) (21)
- Wet and dry etching characteristics of Al0.5In0.5P (1992) (21)
- Plasma etching of ZnS, ZnSe, CdS, and CdTe in electron cyclotron resonance CH4/H2/Ar and H2/Ar discharges (1993) (21)
- Hydrogen sensing of N-polar and Ga-polar GaN Schottky diodes (2009) (21)
- Plasma etching of III-V semiconductor thin films (1992) (21)
- Single‐energy, MeV implant isolation of multilayer III‐V device structures (1992) (21)
- Implant activation and redistribution in AlxGa1−xAs (1990) (21)
- Effect of N2 plasma treatments on dry etch damage in n- and p-type GaN (2001) (21)
- Effect of Inert Gas Additive Species on Cl(2) High Density Plasma Etching of Compound Semiconductors: Part II. InP, InSb, InGaP and InGaAs (1998) (21)
- InN-based Ohmic contacts to InAlN (1997) (21)
- Movement of basal plane dislocations in GaN during electron beam irradiation (2015) (20)
- High efficiency microwave power AlGaAs/InGaAs PHEMTs fabricated by dry etch single gate recess (1995) (20)
- ICP Dry Etching of ZnO and Effects of Hydrogen (2003) (20)
- Proton-irradiated InAlN/GaN high electron mobility transistors at 5, 10, and 15 MeV energies (2012) (20)
- Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions (2013) (20)
- Effects of hydrogen on the optical properties of ZnCdO∕ZnO quantum wells grown by molecular beam epitaxy (2008) (20)
- Sensors using AlGaN/GaN based high electron mobility transistor for environmental and bio-applications (2012) (20)
- Minipressure sensor using AlGaN/GaN high electron mobility transistors (2009) (20)
- Rapid isothermal processing of Pt/Ti contacts to p-type III-V binary and related ternary materials (1992) (20)
- Dry etching characteristics of GaN for blue/green light-emitting diode fabrication (2009) (20)
- High breakdown voltage Au/Pt/GaN Schottky diodes (2000) (20)
- Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors (2021) (20)
- Deep centers and persistent photocapacitance in AlGaN/GaN high electron mobility transistor structures grown on Si substrates (2013) (20)
- SiN/sub x//sulphide passivated GaAs-AlGaAs microdisk lasers (1993) (20)
- Sn doping of GaAs and AlGaAs by MOMBE using tetraethyltin (1991) (20)
- Proton implantation effects on electrical and optical properties of undoped AlGaN with high Al mole fraction (2003) (20)
- Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire (2002) (20)
- Schottky barrier height of boride-based rectifying contacts to p-GaN (2006) (20)
- High breakdown M–I–M structures on bulk AlN (2002) (20)
- Er doping of III-nitrides during growth by metalorganic molecular beam epitaxy (1997) (20)
- Elevated temperature performance of Si-implanted solar-blind β-Ga2O3 photodetectors (2016) (20)
- Plasma etching of III–V semiconductors in BCl3 chemistries: Part I: GaAs and related compounds (1997) (20)
- Effect of temperature on CO sensing response in air ambient by using ZnO nanorod-gated AlGaN/GaN high electron mobility transistors (2013) (20)
- 10 MeV proton damage in β-Ga2O3 Schottky rectifiers (2018) (20)
- Deuterium in germanium: Interaction with point defects (1984) (20)
- Rapid thermal annealing of GaAs in a graphite susceptor—comparison with proximity annealing (1989) (19)
- Effect of high density H2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs (1998) (19)
- Influence of redeposition on the plasma etching dynamics (2007) (19)
- Small area InGaP emitter/carbon doped GaAs base HBTs grown by MOMBE (1992) (19)
- Carbon and zinc delta doping for Schottky barrier enhancement on n‐type GaAs (1989) (19)
- Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors (2011) (19)
- Characteristics of carbon monoxide sensors made by polar and nonpolar zinc oxide nanowires gated AlGaN/GaN high electron mobility transistor (2013) (19)
- Growth of InxGa1−xN and InxAl1−xN on GaAs metalorganic molecular beam epitaxy (1995) (19)
- Electrical properties of deep silver- and iron-related centres in silicon (1984) (19)
- Design of junction termination structures for GaN Schottky power rectifiers (2003) (19)
- ECR plasma etching of GaN, AlN and InN using iodine or bromine chemistries (1994) (19)
- Effects of hydrogen incorporation in GaMnN (2003) (19)
- Bias‐controlled intersubband wavelength switching in a GaAs/AlGaAs quantum well laser (1989) (19)
- Reactive ion etching of III–V nitrides (1997) (19)
- Inductively coupled plasma etching of III-V nitrides in CH{sub 4}/H{sub 2}/Ar and CH{sub 4}/H{sub 2}/N{sub 2} chemistries (1997) (19)
- Finite-element simulations of the effect of device design on channel temperature for AlGaN/GaN high electron mobility transistors (2011) (19)
- Effect of proton irradiation on AlGaN/GaN high electron mobility transistor off-state drain breakdown voltage (2014) (19)
- Dry etching of via connections for InP power devices (1993) (19)
- Zika virus detection using antibody-immobilized disposable cover glass and AlGaN/GaN high electron mobility transistors (2018) (19)
- Electrical and optical properties of modulation-doped p-AlGaN/GaN superlattices (2001) (19)
- Neutron irradiation effects in AlGaN/GaN heterojunctions (2006) (19)
- Dry etching of bulk single-crystal ZnO in CH 4 /H 2 -based plasma chemistries (2006) (19)
- Implantation-produced structural damage in InxGa1-xN (2001) (19)
- Damage Recovery and Dopant Diffusion in Si and Sn Ion Implanted β-Ga2O3 (2019) (19)
- Hydrogen sensing characteristics of non-polar a-plane GaN Schottky diodes (2010) (19)
- 1.55 μm Er-doped GaN LED (1999) (19)
- Comparison of GaN, InN and AlN powders for susceptor-based rapid annealing of group III nitride materials (1997) (19)
- Low-resistance smooth-surface Ti/Al/Cr/Mo/Au n-type Ohmic contact to AlGaN/GaN heterostructures (2009) (19)
- Implanted p–n junctions in GaN (1999) (19)
- Science of dry etching of III-V materials (1994) (19)
- Wet Chemical Etching of Wide Bandgap Semiconductors- GaN, ZnO and SiC (2007) (19)
- Silicon nitride encapsulation of sulfide passivated GaAs/AlGaAs microdisk lasers (1995) (19)
- Electron irradiation of AlGaN /GaN and AlN /GaN heterojunctions (2008) (18)
- Magnetic Properties of Mn and Fe-Implanted p-GaN (2001) (18)
- Fabrication approaches to ZnO nanowire devices (2005) (18)
- A hydrogen leakage detection system using self-powered wireless hydrogen sensor nodes (2007) (18)
- Critical issues of III–V compound semiconductor processing (1997) (18)
- Dry etch gate recess high breakdown voltage power P-HEMTs (1994) (18)
- Fabrication of self‐aligned GaAs/AlGaAs and GaAs/InGaP microwave power heterojunction bipolar transistors (1994) (18)
- Comparison of F 2‐Based Gases for High‐Rate Dry Etching of Si (1999) (18)
- Ni∕Au Ohmic contacts to p-type Mg-doped CuCrO2 epitaxial layers (2007) (18)
- Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance (2022) (18)
- Cathodoluminescence studies of carrier concentration dependence for the electron-irradiation effects in p-GaN (2007) (18)
- Materials and Process Development for ZnMgO/ZnO Light-Emitting Diodes (2008) (18)
- Degradation-induced low frequency noise and deep traps in GaN/InGaN near-UV LEDs (2017) (18)
- InGaN Single-Quantum-Well LEDs (1997) (18)
- Semi-Insulating, Fe-Doped Buffer Layers Grown by Molecular Beam Epitaxy (2007) (18)
- Properties of phosphorus-doped (Zn,Mg)O thin films and device structures (2005) (18)
- Hydrogen centers and the conductivity of I n 2 O 3 single crystals (2015) (18)
- Dry etch damage in inductively coupled plasma exposed GaAs/AlGaAs heterojunction bipolar transistors (1997) (18)
- Studies of Interface States in Sc2O3 ∕ GaN , MgO ∕ GaN , and MgScO ∕ GaN structures (2007) (18)
- Interaction of hydrogen and thermal donor defects in silicon (1987) (18)
- Deep electron and hole traps in neutron transmutation doped n-GaN (2011) (18)
- Comparison of electrical properties and deep traps in p-AlxGa1−xN grown by molecular beam epitaxy and metal organic chemical vapor deposition (2009) (18)
- Electrical properties of GaN (Fe) buffers for AlGaN∕GaN high electron mobility transistor structures (2008) (18)
- Remote sensing system for hydrogen using GaN Schottky diodes (2005) (18)
- Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors (2000) (18)
- Exhaled-Breath Detection Using AlGaN ∕ GaN High Electron Mobility Transistors Integrated with a Peltier Element (2008) (18)
- Local structure of S impurities in implanted GaAs (1987) (18)
- Reverse Breakdown in Large Area, Field-Plated, Vertical β-Ga2O3Rectifiers (2019) (18)
- Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001) (2008) (18)
- Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors (2003) (18)
- Self‐aligned technology for tungsten‐contacted InP‐based etched mesa laser devices (1991) (18)
- Effect of low dose γ-irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors (2014) (18)
- Etching of GaAs/AlGaAs rib waveguide structures using BCl3/Cl2/N2/Ar electron cyclotron resonance (1995) (18)
- Characterization of GaAs and Si by a microwave photoconductance technique (1986) (18)
- Electrical Properties, Deep Levels and Luminescence Related to Fe in Bulk Semi-Insulating β-Ga2O3 Doped with Fe (2019) (17)
- ITO∕Ti∕Au Ohmic contacts on n-type ZnO (2006) (17)
- Pnp InGaAsN-based HBT with graded base doping (2001) (17)
- Dominant factors limiting efficiency of optical spin detection in ZnO-based materials (2008) (17)
- Sb-based semiconductors for low power electronics (2013) (17)
- A study of deep metal-related centres in germanium by capacitance spectroscopy (1982) (17)
- Low-temperature oxygen diffusion in silicon (1984) (17)
- Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes (2019) (17)
- Zinc delta doping of GaAs by organometallic vapor phase epitaxy (1989) (17)
- Patterning of NiFe and NiFeCo in CO/NH3 high density plasmas (1999) (17)
- Carrier Removal Rates and Deep Traps in Neutron Irradiated n-GaN Films (2011) (17)
- UV-photoassisted etching of GaN in KOH (1999) (17)
- Valence- and Conduction-Band Offsets for Atomic-Layer-Deposited Al2O3 on (010) (Al0.14Ga0.86)2O3 (2019) (17)
- Annealing effects on electrical properties of MgZnO films grown by pulsed laser deposition (2008) (17)
- Efficient spin relaxation in InGaN∕GaN and InGaN∕GaMnN quantum wells: An obstacle to spin detection (2005) (17)
- Transparent dual-gate InGaZnO thin film transistors: OR gate operation (2009) (17)
- Electron Irradiation Effects in GaN ∕ InGaN Multiple Quantum Well Structures (2008) (17)
- 2D Material‐Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (2018) (17)
- Effects of fluorine incorporation into β-Ga2O3 (2018) (17)
- ZnO, GaN, and InN Functionalized Nanowires for Sensing and Photonics Applications (2011) (17)
- Comparison of Dual-Stack Dielectric Field Plates on β-Ga2O3 Schottky Rectifiers (2019) (17)
- Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO (2007) (17)
- Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability (2013) (17)
- Hydrogenation of electron traps in bulk GaAs and GaP (1983) (17)
- Cl2-based inductively coupled plasma etching of CoFeB, CoSm, CoZr and FeMn (1999) (17)
- Design and simulation of ZnO-based light-emitting diode structures (2005) (17)
- Use of ultraviolet/ozone cleaning to remove C and O from GaAs prior to metalorganic molecular beam epitaxy and metalorganic chemical vapor deposition (1991) (17)
- Tantalum nitride films as resistors on chemical vapor deposited diamond substrates (1993) (17)
- Power semiconductor materials and devices (1997) (17)
- Effects of H2 plasma exposure on GaAsAlGaAs heterojunction bipolar transistors (1997) (17)
- Low energy electron-enhanced etching of GaN/Si in hydrogen direct current plasma (1996) (17)
- Thermal Stability of Implanted or Plasma Exposed Deuterium in Single Crystal Ga2O3 (2017) (17)
- Si-diffused GaN for enhancement-mode GaN mosfet on si applications (2006) (17)
- Defect States Determining Dynamic Trapping-Detrapping in β-Ga2O3 Field-Effect Transistors (2019) (16)
- Room temperature ferromagnetism in GaMnN and GaMnP (2003) (16)
- Electrical properties and defect states in undoped high-resistivity GaN films used in high-power rectifiers (2000) (16)
- The role of annealing ambient on diffusion of implanted Si in β-Ga2O3 (2019) (16)
- Depth dependence of silicon donor passivation and reactivation in hydrogenated GaAs (1989) (16)
- Microstructural stability of ohmic contacts to InxGa1−xN (1996) (16)
- Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO (2006) (16)
- Synthesis and characterization of single crystalline SnO2 nanorods by high-pressure pulsed laser deposition (2008) (16)
- Rapid thermal low‐pressure chemical vapor deposition of SiOx films onto InP (1991) (16)
- Ion implantation doping and isolation of In0.5Ga0.5P (1991) (16)
- Anisotropy of In incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth (2009) (16)
- Ion-implantation and activation behavior of Si in MBE-Grown GaAs on Si substrates for GaAs MESFET's (1987) (16)
- Hydrogenation effects during high-density plasma processing of GaAs MESFETS (1997) (16)
- AlGaN/GaN High Electron Mobility Transistors Irradiated with 17 MeV Protons (2008) (16)
- Activation characteristics of ion-implanted Si+ in AlGaN (2005) (16)
- Hydrogen incorporation in GaN, AlN, and InN during Cl 2 /CH 4 /H 2 /Ar ECR plasma etching (1995) (16)
- Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors (2019) (16)
- Ohmic contact properties of non-polar a-plane GaN films on r-plane sapphire substrates (2010) (16)
- Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3 (2018) (16)
- GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates (2004) (16)
- Optical and structural properties of Eu-diffused and doped ZnO nanowires (2009) (16)
- Electrical transport in p-GaN, n-InN and n-InGaN (1996) (16)
- Dry etching of GaSb and InSb in (1997) (16)
- Band alignment of atomic layer deposited SiO2 and HfSiO4 with β-Ga2O3 (2017) (16)
- Channeling lattice location of Se implanted into InP by RBS and PIXE (1990) (16)
- Investigation of traps in AlGaN/GaN high electron mobility transistors by sub-bandgap optical pumping (2015) (16)
- Temperature stability of high-resistivity GaN buffer layers grown by metalorganic chemical vapor deposition (2013) (16)
- Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures (2011) (16)
- Ohmic contacts to p-type GaN based on TaN, TiN, and ZrN (2007) (16)
- Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc2O3 passivated AlGaN/GaN HEMTs (2003) (15)
- Hydrogen sensing characteristics of Pt Schottky diodes on (201) and (010) Ga2O3 single crystals (2018) (15)
- InGaP/GaAs single- and double-heterojunction bipolar transistors grown by organometallic vapour phase epitaxy (1992) (15)
- Role of grain boundaries in ZnO nanowire field-effect transistors (2007) (15)
- Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor (2000) (15)
- Dry etching of zinc-oxide and indium-zinc-oxide in IBr and BI3 plasma chemistries (2007) (15)
- Cl2-based dry etching of GaN films under inductively coupled plasma conditions (2000) (15)
- Plasma etching of wide bandgap and ultrawide bandgap semiconductors (2020) (15)
- Growth of GaAs/AlGaAs HBTs by MOMBE (CBE) (1992) (15)
- Growth and Device Performance of GaN Schottky Rectifiers (1999) (15)
- Detection of an endocrine disrupter biomarker, vitellogenin, in largemouth bass serum using AlGaN/GaN high electron mobility transistors (2010) (15)
- Editors’ Choice—Electrical Properties and Deep Traps in α-Ga2O3:Sn Films Grown on Sapphire by Halide Vapor Phase Epitaxy (2020) (15)
- Comparison of E-beam and Sputter-Deposited ITO Films for 1.55 μm Metal–Semiconductor–Metal Photodetector Applications (2007) (15)
- Comparison of intrinsic and extrinsic carbon doping sources for GaAs and AlGaAs grown by metalorganic molecular beam epitaxy (1994) (15)
- Thermal Simulations of High Current β-Ga2O3 Schottky Rectifiers (2019) (15)
- Optical study of spin injection dynamics in InGaN∕GaN quantum wells with GaMnN injection layers (2004) (15)
- High-speed modulation of 850-nm intracavity contacted shallow implant-apertured vertical-cavity surface-emitting lasers (2001) (15)
- Dry Etching of GaAs , AlGaAs , and GaSb Using Electron Cyclotron Resonance and Radio Frequency CH 4 / H 2 / Ar or C 2 H 6 / H 2 / Ar Discharges (1991) (15)
- Surface and bulk thermal annealing effects on ZnO crystals (2008) (15)
- Anisotropy of hydrogen plasma effects in bulk n-type β-Ga2O3 (2020) (15)
- Hydrogenated Amorphous Silicon, by R. A. Street, Cambridge University Press, Cambridge 1991, XIV, 417 pp., hardcover, £ 65.00; ISBN 0‐521‐37156‐2 (1992) (15)
- Effect of atomic hydrogen on Er luminescence from AlN (1998) (15)
- Improved long-term thermal stability of InGaN/GaN multiple quantum well light-emitting diodes using TiB2-and Ir-based p-Ohmic contacts (2007) (15)
- High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors (2000) (15)
- Rapid detection of cardiac troponin I using antibody-immobilized gate-pulsed AlGaN/GaN high electron mobility transistor structures (2017) (15)
- Characterization of ZnO nanowires grown on Si (100) with and without Au catalyst (2009) (15)
- Determination of Sm2O3/GaAs heterojunction band offsets by x-ray photoelectron spectroscopy (2008) (15)
- Getting to the core of the problem: origin of the luminescence from (Mg,Zn)O heterostructured nanowires. (2007) (15)
- Diffusion of implanted Ge and Sn in β-Ga2O3 (2019) (15)
- Characteristics of gate leakage current and breakdown voltage of AlGaN/GaN high electron mobility transistors after postprocess annealing (2014) (15)
- 160-A bulk GaN Schottky diode array (2003) (15)
- Diffusion of dopants and impurities in β-Ga2O3 (2021) (14)
- Effect of deposition conditions and annealing on W Schottky contacts on n-GaN (2004) (14)
- Mechanism of high density plasma processes for ion-driven etching of materials (1999) (14)
- Low Temperature Chlorine‐Based Dry Etching of III–V Semiconductors (1994) (14)
- ZrB 2 Schottky diode contacts on n-GaN (2006) (14)
- Rapid Annealing of GaAs and Related Compounds (1984) (14)
- Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors (2004) (14)
- Deep-level studies in GaN layers grown by epitaxial lateral overgrowth (2008) (14)
- High density plasma etching of NiFe, NiFeCo and NiMnSb-based multilayers for magnetic storage elements (1999) (14)
- Comparison of dry etching of PMMA and polycarbonate in diffusion pump-based O2 capacitively coupled plasma and inductively coupled plasma (2010) (14)
- The Effect of Thermally Induced Stress on Device Temperature Measurements by Raman Spectroscopy (2005) (14)
- Deuterium incorporation and diffusivity in plasma-exposed bulk Ga2O3 (2016) (14)
- Damage introduction in InGaP by electron cyclotron resonance Ar plasmas (1995) (14)
- Effect of N2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma (2000) (14)
- High-density plasma etching of indium–zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries (2006) (14)
- Inductively coupled plasma etching of III–V semiconductors in Cl2-based chemistries (1998) (14)
- Batch fabrication and structure of integrated GaAs-Al/sub x/Ga/sub 1-x/As field-effect transistor-self-electro-optic effect devices (FET-SEED's) (1992) (14)
- Optical characterization of ZnMnO-based dilute magnetic semiconductor structures (2006) (14)
- EBIC and CL studies of ELOG GaN films (2009) (14)
- GaAs MESFETs, ring oscillators and divide-by-2 integrated circuits fabricated on MBE grown GaAs on Si substrates (1988) (14)
- Etch rates and surface chemistry of GaAs and AlGaAs reactively ion etched in C2H6/H2 (1989) (14)
- Hydrogen Passivation of Oxygen Donors in Si (1985) (14)
- Comparison of Cl2/He, Cl2/Ar, and Cl2/Xe plasma chemistries for dry etching of NiFe and NiFeCo (1999) (14)
- Modeling and Fabrication of ZnO Nanowire Transistors (2008) (14)
- Hydrogen in Silicon (1987) (14)
- Damage introduction in GaAs/AlGaAs and InGaAs/InP heterojunction bipolar transistor structures during electron cyclotron resonance plasma processing (1993) (14)
- Co-implantation of Be+O and Mg+O into GaN (2001) (14)
- Activation characteristics and defect structure in Si‐implanted GaAs‐on‐Si (1987) (14)
- Comparison of ohmic metallization schemes for InGaAlN (1997) (14)
- Hydrogen in wide bandgap semiconductors (2000) (14)
- Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistors (2012) (14)
- Evaluation of fluorinated polyimide etching processes for optical waveguide fabrication (1999) (14)
- High microwave power electron cyclotron resonance etching of III–V semiconductors in CH4/H2/Ar (1996) (14)
- Carbon-doped base GaAs-AlGaAs HBT's grown by MOMBE and MOCVD regrowth (1990) (14)
- Low and moderate dose gamma-irradiation and annealing impact on electronic and electrical properties of AlGaN/GaN high electron mobility transistors (2015) (14)
- Comparison of passivation layers for AlGaN/GaN high electron mobility transistors (2011) (14)
- Laser ablation of via holes in GaN and AlGaN∕GaN high electron mobility transistor structures (2006) (14)
- Hydrogen passivation of grain boundaries in polycrystalline gallium arsenide (1983) (14)
- Study on the effects of proton irradiation on the dc characteristics of AlGaN/GaN high electron mobility transistors with source field plate (2014) (14)
- Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation (2003) (14)
- Diffusion-Controlled Selective Wet Etching of ZnCdO over ZnO (2005) (14)
- Comparison of plasma chemistries for dry etching thin film electroluminescent display materials (1998) (14)
- Schottky barriers of various metals on Al0.5Ga0.5As0.05Sb0.95 and the influence of hydrogen and sulfur treatments on their properties (1992) (14)
- Chloride ion detection by InN gated AlGaN∕GaN high electron mobility transistors (2010) (14)
- Gallium nitride-based gas, chemical and biomedical sensors (2012) (14)
- Tungsten metallization for stable and self-aligned InP-based laser devices (1990) (14)
- Deep traps and instabilities in AlGaN/GaN high electron mobility transistors on Si substrates (2016) (14)
- Polydiacetylene‐based selective NH3 gas sensor using Sc2O3/GaN structures (2007) (14)
- Dry etch patterning of LaCaMnO3 and SmCo thin films (1998) (14)
- Edge termination design and simulation for bulk GaN rectifiers (2002) (14)
- Inductively coupled plasma damage in GaN Schottky diodes (1999) (14)
- RAPID THERMAL PROCESSING OF III-NITRIDES (1997) (13)
- Growth and dry etch processing of MOMBE GaAs p-n junctions (1991) (13)
- Deep Traps in AlGaN/GaN High Electron Mobility Transistors on SiC (2016) (13)
- Dry etching mechanism of copper and magnetic materials with UV illumination (2001) (13)
- Comparison of plasma chemistries for dry etching of Ta2O5 (2000) (13)
- Performance of GaAs MESFET's on InP substrates (1989) (13)
- Effect of probe geometry during measurement of >100 A Ga2O3 vertical rectifiers (2021) (13)
- Comparison of Interface State Density Characterization Methods for SiO[sub 2]/4H-SiC MOS Diodes (2004) (13)
- Surface recombination velocities on processed InGaP p‐n junctions (1993) (13)
- Properties of (Ga, Mn)N With and Without Detectable Second Phases (2004) (13)
- Etching processes for fabrication of GaN/InGaN/AlN microdisk laser structures (1996) (13)
- Dissociation of P‐H, As‐H, and Sb‐H complexes in n‐type Si (1991) (13)
- Properties and annealing stability of Fe doped semi-insulating GaN structures (2005) (13)
- Low bias dry etching of III-nitrides in Cl2-based inductively coupled plasmas (1998) (13)
- Mobility of copper centers in reverse‐biased germanium junction diodes (1982) (13)
- High-efficiency GaN/AlGaN HEMT oscillator operating at L-band (2006) (13)
- Hydrogen Iodide‐Based Dry Etching of GaAs , InP , and Related Compounds (1992) (13)
- Redistribution and activation of implanted S, Se, Te, Be, Mg, and C in GaN (1999) (13)
- GaAs/AlGaAs quantum well and modulation‐doped heterostructures grown by organometallic vapor phase epitaxy using trimethylamine alane (1991) (13)
- Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers (2003) (13)
- Improved breakdown of AlInAs/InGaAs heterojunction bipolar transistors (1991) (13)
- Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions (2002) (13)
- Specific contact resistance of Ti/Al/Pt/Au ohmic contacts to phosphorus-doped ZnO thin films (2004) (13)
- Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors (2011) (13)
- Electron cyclotron resonance plasma‐induced damage in AlGaAs/GaAs/AlGaAs single quantum wells (1991) (13)
- Transmission electron microscopy characterization of electrically stressed AlGaN/GaN high electron mobility transistor devices (2012) (13)
- Hydrogen passivation of deep donor centres in high-purity epitaxial GaAs (1982) (13)
- Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010) (Al0.14Ga0.86)2O3 (2018) (13)
- SiO2 nanohole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting-diodes (2016) (13)
- Metastable centers in AlGaN/AlN/GaN heterostructures (2012) (13)
- New plasma chemistries for etching GaN and InN: BI3 and BBr3 (1998) (13)
- Optical emission end point detection for via hole etching in InP and GaAs power device structures (1994) (13)
- HYDROGEN IN CRYSTALLINE SEMICONDUCTORS: PART II–III–V COMPOUNDS (1994) (13)
- Thermal stability of dry etch damage in SiC (1996) (13)
- Electron traps as major recombination centers in n-GaN films grown by metalorganic chemical vapor deposition (2016) (13)
- Hydrogen Passivation of Laser‐Induced Acceptor Defects in p‐Type Silicon (1982) (13)
- Photoluminescence from annealed semi‐insulating GaAs crystals: The 1.360‐eV band (1988) (13)
- Attenuation losses in electron cyclotron resonance plasma etched AlGaAs waveguides (1995) (13)
- Sn-H Complex in Hydrogen Pass Ivated GaAs (1989) (13)
- Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers (2022) (12)
- The optical signature of electron injection in p-(Al)GaN (2003) (12)
- Dopant passivation occurring during electron cyclotron resonance (ECR) CH4/H2 dry etching of InGaAs/AlInAs HEMTs (1995) (12)
- Forward bias degradation and thermal simulations of vertical geometry β-Ga2O3 Schottky rectifiers (2019) (12)
- Analysis and design of AlGaN/GaN HEMT resistive mixers (2007) (12)
- Finite difference analysis of thermal characteristics of CW operation 850 nm lateral current injection and implant-apertured VCSEL with flip-chip bond design (2002) (12)
- Nonpolar GaN grown on Si by hydride vapor phase epitaxy using anodized Al nanomask (2009) (12)
- The influence of hydrogen plasma treatment and proton implantation on the electrical properties of InAs (1993) (12)
- Improved thermally stable ohmic contacts on p-GaN based on W2B (2006) (12)
- Magnesium oxide gate dielectrics grown on GaN using an electron cyclotron resonance plasma (2003) (12)
- Improved free-standing GaN Schottky diode characteristics using chemical mechanical polishing (2008) (12)
- Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors (2012) (12)
- Cl2 / Ar High‐Density‐Plasma Damage in GaN Schottky Diodes (2000) (12)
- Deep level effects in silicon and germanium after plasma hydrogenation (1983) (12)
- Simulation of GaN/AlGaN heterojunction bipolar transistors: part II – pnp structures (2000) (12)
- Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide (2016) (12)
- Band Offsets in Dielectric/InGaZnO4 Heterojunctions (2013) (12)
- High temperature annealing of GaN, InN, AlN and related alloys (1997) (12)
- BCl3/N2 dry etching of InP, InAlP, and InGaP (1996) (12)
- 8 – Wet and Dry Etching of Compound Semiconductors (1995) (12)
- Cl2/Ar plasma etching of binary, ternary, and quaternary In‐based compound semiconductors (1996) (12)
- Improved sidewall morphology on dry-etched SiO2 masked GaN features (1998) (12)
- Electron cyclotron resonance etching of III-V nitrides in IBr/Ar plasmas (1997) (12)
- Structural characterization of GaN and GaAsxN1−x grown by electron cyclotron resonance‐metalorganic molecular beam epitaxy (1994) (12)
- Comparison of electrical and reliability performances of TiB2-, CrB2-, and W2B5-based Ohmic contacts on n-GaN (2006) (12)
- Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes (2019) (12)
- Large-area suspended graphene on GaN nanopillars (2011) (12)
- Patterning of GaN in High-Density Cl 2 - and BCl 3 -Based Plasmas (1997) (12)
- The impact of impurity incorporation on heterojunction bipolar transistors grown by metalorganic molecular beam epitaxy (1994) (12)
- Eighteen mega-electron-volt alpha-particle damage in homoepitaxial β-Ga2O3 Schottky rectifiers (2018) (12)
- Properties of undoped GaN/InGaN multi-quantum-wells and GaN/InGaN p-n junctions prepared by epitaxial lateral overgrowth (2009) (12)
- Dry etching and implantation characteristics of III-N alloys (1995) (12)
- Selective dry etching of InGaAs and InP over AlInAs in CH4/H2/SF6 (1990) (12)
- GaN Metal Oxide Semiconductor Field Effect Transistors (1999) (12)
- Patterning of Cu, Co, Fe, and Ag for magnetic nanostructures (1997) (12)
- GaN-based light-emitting diodes on graphene-coated flexible substrates. (2014) (12)
- Oxygen implant isolation of n-GaN field-effect transistor structures (1999) (12)
- High Breakdown Voltage ( − 201 ) β-Ga 2 O 3 Schottky Rectifiers (2017) (12)
- High temperature rapid thermal annealing of InP and related materials (1993) (12)
- Effects of 340 keV proton irradiation on InGaN/GaN blue light-emitting diodes (2015) (12)
- Effect of thermal stability of GaN epi-layer on the Schottky diodes (2000) (12)
- Low resistance ohmic contacts on nitrogen ion bombarded InP (1994) (12)
- Cl2‐Based Dry Etching of GaAs, AlGaaAs, and GaP (1996) (12)
- Simulation of npn and pnp AlGaN/GaN heterojunction bipolar transistors performances: limiting factors and optimum design (2001) (12)
- Effects of hydrogen implantation into GaN (1998) (12)
- Effect of Ozone Cleaning and Annealing on Ti ∕ Al ∕ Pt ∕ Au Ohmic Contacts on GaN Nanowires (2006) (12)
- Forward turn-on and reverse blocking characteristics of GaN Schottky and p-i-n rectifiers (2000) (12)
- Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors (2013) (12)
- Quantum size effects in GaAsGaAlAs quantum well wires and quantum well boxes (1987) (12)
- 1.6 A GaN Schottky rectifiers on bulk GaN substrates (2002) (12)
- Thermal stability of GaAs (C)/InAs superlattices grown by metalorganic molecular beam epitaxy (1992) (12)
- Comparison of Dry Etching Techniques for III‐V Semiconductors in CH 4 / H 2 / Ar Plasmas (1996) (12)
- Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga2O3 (2020) (12)
- Wide bandgap semiconductors : growth, processing and applications (2000) (12)
- Redistribution of implanted dopants in GaN (1999) (12)
- Thermal simulations of high power, bulk GaN rectifiers (2003) (12)
- Effect of proton irradiation energy on SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors (2018) (12)
- Optical and electron beam studies of carrier transport in quasibulk GaN (2009) (12)
- Self-aligned process for emitter- and base-regrowth GaN HBTs and BJTs (2001) (12)
- Effects of high dose proton irradiation on the electrical performance of ZnO Schottky diodes (2004) (12)
- Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation (2020) (12)
- Structural properties of the epitaxial CuCr0.95Mg0.05O2 thin films on c-plane sapphire substrates by pulsed laser deposition (2011) (12)
- Inductively Coupled Plasma Etch Damage in GaAs and InP Schottky Diodes (1997) (12)
- Optimization of Edge Termination Techniques for β-Ga2O3 Schottky Rectifiers (2019) (11)
- Device degradation during low temperature ECR-CVD. Part II: GaAs/AlGaAs HBTs (1998) (11)
- Detection of C 2 H 4 Using Wide-Bandgap Semiconductor Sensors AlGaN/GaN MOS Diodes and Bulk ZnO Schottky Rectifiers (2004) (11)
- Neutron irradiation effects in undoped n-AlGaN (2006) (11)
- Defect States Induced in GaN-Based Green Light Emitting Diodes by Electron Irradiation (2018) (11)
- Electrical and optical properties of p-GaN films implanted with transition metal impurities (2004) (11)
- Degradation-free electron cyclotron resonance plasma etching of InP (1991) (11)
- Properties of Mn and Co implanted ZnO crystals (2003) (11)
- Hydrogenation Effects on Magnetic Properties of GaMnP (2003) (11)
- Wet Chemical Etching of Al0.5In0.5P (1995) (11)
- Stability of Ti/Al/ZrB 2 /Ti/Au ohmic contacts on n-GaN (2006) (11)
- Temperature characteristics of 850 nm, intra-cavity contacted, shallow implant-apertured vertical-cavity surface-emitting lasers (2002) (11)
- Passivation of carbon doping in InGaAs during ECR-CVD of SiNx (1996) (11)
- Vertical and lateral mobilities in n-(Ga, Mn)N (2003) (11)
- Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area (2014) (11)
- III-V nitride materials and processes (1996) (11)
- Electrical Characterization of 5 MeV Proton-Irradiated Few Layer Graphene (2010) (11)
- Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (2009) (11)
- Dry etch damage in GaAs metal-semiconductor field-effect transistors exposed to inductively coupled plasma and electron cyclotron resonance Ar plasmas (1997) (11)
- Device processing and junction formation needs for ultra-high power Ga2O3 electronics (2019) (11)
- Comment on «neutralization of shallow acceptor levels in silicon by atomic hydrogen» (1984) (11)
- FABRICATION OF SPIN-CURRENT FIELD-EFFECT TRANSISTOR STRUCTURES (1997) (11)
- Effect of thermal annealing for W/β-Ga2O3 Schottky diodes up to 600 °C (2019) (11)
- Role of hole trapping by deep acceptors in electron-beam-induced current measurements in β-Ga2O3 vertical rectifiers (2020) (11)
- Etching of As- and P-based III–V semiconductors in a planar inductively coupled BCl3/Ar plasma (2004) (11)
- Thermal stability of OHMIC contacts to InN (1998) (11)
- Inductively Coupled Ar Plasma Damage in AlGaAs (1997) (11)
- Low-dimensional systems: Quantum wires and quantum boxes by MBE (1987) (11)
- Electrical properties of bulk, non-polar, semi-insulating M-GaN grown by the ammonothermal method (2018) (11)
- Incorporation and drift of hydrogen at low temperatures in ZnO (2007) (11)
- Dc characteristics of AlGaN/GaN heterostructure field-effect transistors on free-standing GaN substrates (2003) (11)
- Extraction of Migration Energies and Role of Implant Damage on Thermal Stability of Deuterium in Ga2O3 (2017) (11)
- Defects and ion redistribution in implant-isolated GaAs-based device structures (1993) (11)
- The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS (2002) (11)
- Level set approach to simulation of feature profile evolution in a high-density plasma-etching system (2001) (11)
- Hydrogen Effects on the Optical and Electrical Properties of ZnO Light-Emitting Diodes (2008) (11)
- Simulation of vertical and lateral ZnO light-emitting diodes (2006) (11)
- RF performance of HVPE-grown AlGaN/GaN HEMTs (2004) (11)
- Thermal stability of W, WSix, and Ti/Al ohmic contacts to InGaN, InN, and InAlN (1996) (11)
- Deep electron and hole traps in electron-irradiated green GaN/InGaN light emitting diodes (2017) (11)
- Comparison of surface recombination velocities in InGaP and AlGaAs mesa diodes (1994) (11)
- Effects of radiation damage in GaN and related materials (2008) (11)
- Use of TiB2 diffusion barriers for Ni/Au ohmic contacts on p-GaN (2006) (11)
- Interface dependent electrical properties of amorphous InGaZnO4 thin film transistors (2009) (11)
- Comparison of ICl- and IBr-based plasma chemistries for inductively coupled plasma etching of GaN, InN and AlN (1999) (11)
- High density, low temperature dry etching in GaAs and InP device technology (1995) (11)
- Migration and luminescence enhancement effects of deuterium in ZnO∕ZnCdO quantum wells (2008) (11)
- 0.25- mu m pseudomorphic HEMTs processed with damage-free dry-etch gate-recess technology (1992) (11)
- Electron injection-induced effects in Si-doped β-Ga2O3 (2019) (11)
- AIN-based dilute magnetic semiconductors (2005) (11)
- Experimental estimation of electron–hole pair creation energy in β-Ga2O3 (2021) (11)
- Diffusion of hydrogen in n-type Si (1994) (11)
- Low-pressure inductively coupled plasma etching of benzocyclobutene with SF6/O2 plasma chemistry (2012) (11)
- 60Co Gamma Ray Damage in Homoepitaxial β-Ga2O3Schottky Rectifiers (2019) (11)
- Properties of Zn3N2-doped ZnO films deposited by pulsed laser deposition (2008) (11)
- Impact of Electron Injection and Temperature on Minority Carrier Transport in Alpha-Irradiated ß-Ga2O3 Schottky Rectifiers (2019) (10)
- Low temperature electron cyclotron resonance plasma etching of GaAs, AlGaAs, and GaSb in Cl2/Ar (1994) (10)
- Fabrication of GaN nanostructures by a sidewall-etchback process (1994) (10)
- Comparison of plasma etch chemistries for MgO (2001) (10)
- 10 Gbit/s high sensitivity low error rate decision circuit implemented with C-doped AlGaAs/GaAs HBTs (1991) (10)
- Switching Behavior and Forward Bias Degradation of 700V, 0.2A, β-Ga2O3Vertical Geometry Rectifiers (2019) (10)
- Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts (2017) (10)
- The role of aluminum and hydrogen in impurity contamination of AlGaAs grown by MOMBE (1991) (10)
- Reactive Ion Etching of InAs , InSb , and GaSb in CCl2 F 2 / O 2 and C 2 H 6 / H 2 (1990) (10)
- Use of hydrogenated chlorofluorocarbon mixtures for reactive ion etching of In‐based III–V semiconductors (1990) (10)
- Deep levels studies of AlGaN/GaN superlattices (2003) (10)
- Wet and Dry Etching of InGaP (1991) (10)
- HYDROGEN IN CRYSTALLINE SEMICONDUCTORS: PART I—SILICON (1994) (10)
- Dry etching of III–V semiconductors in CH3I, C2H5I, and C3H7I discharges (1992) (10)
- Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1−xOy on InGaZnO4 (2017) (10)
- Characterization of GaAs grown by metalorganic chemical vapor deposition on Si‐on‐insulator (1987) (10)
- Room-temperature-deposited indium-zinc oxide thin films with controlled conductivity (2007) (10)
- Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors (2011) (10)
- Comparative study of Ni nanowires patterned by electron-beam lithography and fabricated by lift-off and dry etching techniques (2000) (10)
- Integration of Selective Area Anodized AgCl Thin Film with AlGaN/GaN HEMTs for Chloride Ion Detection (2008) (10)
- Thermal simulations of three-dimensional integrated multichip module with GaN power amplifier and Si modulator (2006) (10)
- GaN as a detector of α-particles and neutrons (2011) (10)
- Optical and structural properties of Mg-ion implanted GaN nanowires (2009) (10)
- Thermal stability of W2B and W2B5 contacts on ZnO (2005) (10)
- Dry etching processes for fabrication of QWIPs and other detector structures (1997) (10)
- Electrical and optical properties of GaCrN films grown by molecular beam epitaxy (2005) (10)
- Hydrogen on Semiconductor Surfaces (1986) (10)
- Gate breakdown characteristics of MgO/GaN MOSFETs (2003) (10)
- Temperature dependence of MgO/GaN MOSFET performance (2003) (10)
- Magneto-optical properties of Cr3+ in β-Ga2O3 (2021) (10)
- Dry etching of submicron gratings for InP laser structures-comparison of HI/H2, CH4/H2 and C2H6/H2 plasma chemistries (1992) (10)
- Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures (2001) (10)
- Properties of CdZnO/ZnO Heterostructures for UV Light Emitters (2006) (10)
- Applications of ion implantation in III–V device technology (1993) (10)
- Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors (2011) (10)
- Rapid Electrochemical Detection for SARS-CoV-2 and Cardiac Troponin I Using Low-Cost, Disposable and Modular Biosensor System (2020) (10)
- Understanding the Infrared Spectrum of Bare CH 5 þ (10)
- Hydrogen passivation of laser‐induced defects in germanium (1983) (10)
- Optical Signature of the Electron Injection in Ga2O3 (2017) (10)
- Ohmic contacts to heavily carbon‐doped p‐AlxGa1−xAs (1991) (10)
- Common‐Base Operation of GaN Bipolar Junction Transistors (1999) (10)
- Changes in electrical and optical properties of p-AlGaN due to proton implantation (2004) (10)
- Detection of CO using bulk ZnO Schottky rectifiers (2005) (10)
- Implantation temperature dependence of Si activation in AlGaN (2006) (10)
- Electrically pumped, room-temperature microdisk semiconductor lasers with submilliampere threshold currents (1992) (10)
- Increase in photoluminescence of Zn-doped p-type InP after hydrogenation (1989) (10)
- Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes (2004) (10)
- High ion density plasma etching of InGaP, AlInP, and AlGaP in CH{sub 4}/H{sub 2}/Ar (1996) (10)
- Electrical characterization of 60Co gamma radiation-exposed InAlN/GaN high electron mobility transistors (2013) (10)
- Comparison of dry etching of AlGaAs and InGaP in a planar inductively coupled BCl3 plasma (2003) (10)
- Use of Sn-doped GaAs for non-alloyed ohmic contacts to HEMTs (1994) (10)
- Effect of 5 MeV proton radiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors (2014) (10)
- Effects of ultraviolet illumination on dry etch rates of NiFe-based magnetic multilayers (2000) (10)
- Understanding of etch mechanism and etch depth distribution in inductively coupled plasma etching of GaAs (2001) (10)
- Hydrogen in III-V Compound Semiconductors (1993) (10)
- AlGaN/GaN Heterostructure Based Schottky Diode Sensors with ZnO Nanorods for Environmental Ammonia Monitoring Applications (2018) (10)
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- Influence of ion mixing on the energy dependence of the ion-assisted chemical etch rate in reactive plasmas (2006) (10)
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- Radiation enhanced basal plane dislocation glide in GaN (2016) (9)
- Electron irradiation of near‐UV GaN/InGaN light emitting diodes (2017) (9)
- Current relaxation analysis in AlGaN/GaN high electron mobility transistors (2017) (9)
- CrB2 Schottky Barrier Contacts on n-GaN (2005) (9)
- Selective dry etching using inductively coupled plasmas. Part II. InN/GaN and InN/AlN (1999) (9)
- Pulsed laser deposition of high-quality ZnO films using a high temperature deposited ZnO buffer layer (2008) (9)
- Stability of InAs contact layers on GaAs/AlGaAs heterojunction bipolar transistors during implant isolation annealing (1992) (9)
- Growth of III‐Nitrides on ZnO, LiGaO2, and LiAlO2 Substrates (1998) (9)
- Gate-Lag in AlGaN/GaN High Electron Mobility Transistors: A Model of Charge Capture (2017) (9)
- Dislocations in Germanium: Effects of Plasma Hydrogenation (1983) (9)
- Dramatic Improvements in AlGaN/GaN HEMT Device Isolation Characteristics after UV-Ozone Pretreatment (2004) (9)
- Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers (2002) (9)
- Field drift and hydrogenation of deep level defects associated with 1‐MeV ion‐implanted oxygen in germanium diodes (1983) (9)
- Effect of carbon doping on GaN:Er (2001) (9)
- Influence of gate oxide thickness on Sc2O3/GaN MOSFETs (2003) (9)
- Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer (2003) (9)
- Nondestructive spectroscopic method to detect MnAs metallic nanocrystals in annealed GaAs:Mn (2004) (9)
- Passivation of N-Type Silicon by Hydrogen (1987) (9)
- Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors (2012) (9)
- Influence of the film properties on the plasma etching dynamics of rf-sputtered indium zinc oxide layers (2007) (9)
- Selective dry etching using inductively coupled plasmas. Part I. GaAs/AlGaAs and GaAs/InGaP (1999) (9)
- III-NITRIDE DRY ETCHING : COMPARISON OF INDUCTIVELY COUPLED PLASMA CHEMISTRIES (1999) (9)
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- Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments (2012) (9)
- Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors (2010) (9)
- Effect of electron cyclotron resonance generated hydrogen plasmas on carbon incorporation and interfacial quality of GaAs and AlGaAs grown by metalorganic molecular‐beam epitaxy (1992) (9)
- Reduction in γ-ray damage in hydrogenated silicon (1982) (9)
- Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74 (2019) (9)
- Ti ∕ Au Ohmic Contacts to Al-Doped n-ZnO Grown by Pulsed Laser Deposition (2006) (9)
- Development of chemically assisted dry etching methods for magnetic device structures (1999) (9)
- Plasma damage effects in InAlN field effect transistors (1996) (9)
- Valence and conduction band offsets in sputtered HfO2/InGaZnO4 heterostructures (2015) (9)
- Transient Thermal Processing of GaAs (1985) (9)
- Growth of the dilute magnetic semiconductor GaMnN by molecular-beam epitaxy (2003) (9)
- Valence and Conduction Band Offsets for InN and III-Nitride Ternary Alloys on (−201) Bulk β-Ga2O3 (2019) (9)
- npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions (2000) (9)
- Ecr Etching of GaP, GaAs, InP, and InGaAs in Cl 2 /Ar, Cl 2 /N 2 , BCl 3 /Ar, and BCl 3 /N 2 (1996) (9)
- High-Energy Proton Irradiation of MgO/GaN Metal Oxide Semiconductor Diodes (2002) (9)
- Damage‐induced high‐resistivity regions in Al0.48In0.52As (1989) (9)
- Fast thermal kinetic growth of silicon dioxide films on InP by rapid thermal low-pressure chemical vapour deposition (1992) (9)
- Determination of dielectric axes and transition moment directions in β-Ga2O3 from the polarization dependence of vibrational spectra (2020) (9)
- Electrical Properties of ZnO ( P ) and ZnMgO ( P ) Films Grown by Pulsed Laser Deposition (2007) (9)
- Effect of inert gas additive on Cl2-based inductively coupled plasma etching of NiFe and NiFeCo (1999) (9)
- Annealing and measurement temperature dependence of W2B5-based rectifying contacts to n-GaN (2006) (9)
- Ohmic contacts ton-type In0.5Ga0.5P (1992) (9)
- Temperature and Humidity Dependence of Response of PMGI-Encapsulated Pt-AlGaN/GaN Diodes for Hydrogen Sensing (2017) (9)
- Hydrogen incorporation into GaAs, InP and related compounds during epitaxial growth and device processing (1992) (9)
- Sn doping of GaAs and AlGaAs grown by metalorganic molecular beam epitaxy (1991) (9)
- A photoluminescence study of hydrogenated GaAs grown on an InP substrate by metalorganic chemical vapor deposition (1990) (9)
- Dry etching of III-V semiconductors in IBr/Ar electron cyclotron resonance plasmas (1997) (9)
- Ion Implantation Processing of Gaas and Related Compounds (1989) (9)
- Comparison of laser-wavelength operation for drilling of via holes in AlGaN/GaN HEMTs on SiC substrates (2006) (9)
- Characteristics of Be+ and O+ or H+ co‐implantation in GaAs/AlGaAs heterojunction bipolar transistor structures (1991) (9)
- Low resistance tungsten films on GaAs deposited by means of rapid thermal low pressure chemical vapor deposition (1992) (9)
- Interhalogen plasma chemistries for dry etch patterning of Ni, Fe, NiFe and NiFeCo thin films (1999) (9)
- The shifting tide of expectations (2007) (9)
- Role of vanadium in organometallic vapor phase epitaxy grown GaAs (1989) (9)
- IC1 plasma etching of III–V semiconductors (1997) (9)
- Ferromagnetic semiconductors based upon AlGaP (2003) (9)
- GaN Etching in BCl 3 /Cl 2 Plasmas (1998) (9)
- Enhancement of AlGaN/GaN high electron mobility transistors off-state drain breakdown voltage via backside proton irradiation (2014) (9)
- Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes (2017) (9)
- High quality rapid thermal annealing of InP and GaAs substrates under low pressure tertiarybutylphosphine and tertiarybutylarsine ambients (1991) (9)
- Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes (2007) (9)
- Dry etching bilayer and trilevel resist systems for submicron gate length GaAs based high electron mobility transistors for power and digital applications (1992) (9)
- Elevated temperature reactive ion etching of GaAs and AlGaAs in C2H6/H2 (1989) (9)
- Growth and fabrication of GaNInGaN microdisk laser structures (1996) (9)
- Neutron doping effects in epitaxially laterally overgrown n-GaN (2011) (8)
- Dry etching of CuCrO2 thin films (2008) (8)
- Deep trap analysis in green light emitting diodes: Problems and solutions (2019) (8)
- ZrSiOx/IGZO heterojunctions band offsets determined by X-ray photoelectron spectroscopy (2015) (8)
- The Influence of Hydrogen Plasma Passivation on Electrical and Optical Properties of Aigan Samples Grown on Sapphire (1996) (8)
- Low bias dry etching of tungsten and dielectric layers on GaAs (1993) (8)
- Band alignment in ZrSiO4/ZnO heterojunctions (2016) (8)
- Passivation of Shallow Acceptors in Si and GaAs by Annealing in H2 (1992) (8)
- Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors (2019) (8)
- GRINSCH GaAs/AlGaAs laser structures grown by OMVPE using a novel aluminium source (1990) (8)
- Plasma chemistry dependent ECR etching of GaN (1995) (8)
- Band Offsets in the Mg0.5Ca0.5O/GaN Heterostructure System (2007) (8)
- Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process (2011) (8)
- Comparison of dry etch damage in GaAs/AlGaAs heterojunction bipolar transistors exposed to ECR and ICP Ar plasmas (1998) (8)
- Role of Ion Energy and Flux on Inductively Coupled Plasma Etch Damage in InGaN/GaN Multi Quantum Well Light Emitting Diodes (2005) (8)
- Optical and electrical properties of AlCrN films grown by molecular beam epitaxy (2004) (8)
- Comparison of multipolar and magnetic mirror electron cyclotron resonance sources for CH4/H2 dry etching of III–V semiconductors (1994) (8)
- Thermal stability of hydrogen in LiAlO2 and LiGaO2 (1996) (8)
- OH-Si complex in hydrogenated n-type β-Ga2O3:Si (2021) (8)
- Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides (2000) (8)
- Hydrogen sensors based on Sc2O3/AlGaN/GaN high electron mobility transistors (2005) (8)
- Low‐energy, ion‐enhanced etching of III–V’s for nanodevice applications (1994) (8)
- W(Zn) selectively deposited and locally diffused ohmic contacts to p-InGaAs/InP formed by rapid thermal low pressure metalorganic chemical vapor deposition (1993) (8)
- Increased Schottky barrier heights for Au on n- and p-type GaN using cryogenic metal deposition (2006) (8)
- Wet and dry etching of SiC (2002) (8)
- Nanostructured surface morphology of ZnO grown on p-type GaN and Si by metal organic chemical vapor deposition (2008) (8)
- Hydrogen passivation of argon sputter-etch induced electrically active defects on Ge, Si, and GaAs (1983) (8)
- AlGaN/GaN high electron mobility transistor structures for pressure and pH sensing (2005) (8)
- Effects of Semiconductor Processing Chemicals on Conductivity of Graphene (2012) (8)
- AlGaN/GaN Structures Grown by HVPE: Growth and Characterization (2003) (8)
- Annealing temperature stability of ir and ni-based ohmic contacts on AlGaN/GaN high electron mobility transistors (2004) (8)
- AlGaN∕GaN high electron mobility transistors on Si∕SiO2/poly-SiC substrates (2006) (8)
- Corrosion-free dry etch patterning of magnetic random access memory stacks: Effects of ultraviolet illumination (2000) (8)
- Catalyst-free ZnO nanowires grown on a-plane GaN (2010) (8)
- High-pressure process to produce GaN crystals (2000) (8)
- Er-Doping of Gan and Related Alloys (1996) (8)
- High selectivity plasma etching of InN over GaN (1998) (8)
- AlGaAs/GaAs based HEMTs, inverters and ring oscillators with InGaAs and AlGaAs etch-stop layers (1991) (8)
- Implant isolation of InxAl1−xN and InxGa1−xN (1995) (8)
- On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors (2021) (8)
- Rectifying ZnO : Ag ∕ ZnO : Ga Thin-Film Junctions (2009) (8)
- Robust Detection of Hydrogen Using Differential AlGaN/GaN High Electron Mobility Transistor Sensing Diodes (2007) (8)
- High-Rate Laser Ablation For Through-Wafer Via Holes in SiC Substrates and GaN/AIN/SiC Templates (2004) (8)
- Fabrication of Y‐gate, submicron gate length GaAs metal–semiconductor field effect transistors (1993) (8)
- Advances in Processing of ZnO (2006) (8)
- W2B and CrB2 diffusion barriers for Ni/Au contacts to p-GaN (2007) (8)
- Microstructure and Thermal Stability of Aluminum Nitride Thin Films Deposited at Low Temperature on Silicon (2002) (8)
- Conformable coating of SiO2 on hydrothermally grown ZnO nanorods (2008) (8)
- W2B-based ohmic contacts to n-GaN (2005) (8)
- Pd-catalyzed hydrogen sensing with InN nanobelts (2009) (8)
- Effects of 2 MeV Ge+ irradiation on AlGaN/GaN high electron mobility transistors (2013) (8)
- Use of Ti in ohmic metal contacts to p‐GaAs (1995) (8)
- Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes (2013) (8)
- Band offsets in Sc2O3/ZnO heterostructures deposited by RF magnetron sputtering (2015) (8)
- Investigation of GaAs Dry Etching in a Planar Inductively Coupled BCl3 Plasma (2004) (8)
- Improvedn-type GaAs ohmic contacts compatible with a chlorine-based dry-etch process (1991) (8)
- Aging and Stability of GaN High Electron Mobility Transistors and Light-Emitting Diodes With $\hbox{TiB}_{2}$- and Ir-Based Contacts (2008) (8)
- Annealing behavior of AlxGa1−xAs:C grown by metalorganic molecular beam epitaxy (1995) (8)
- Phototransistor measurements in AlGaN/GaN HBTs (2001) (7)
- Effect of ion energy on hydrogen diffusion in n- and p-GaAs (1995) (7)
- Low temperature ECR-CVD of SiNX for III-V device passivation (1998) (7)
- Deep defect states in quenched, gamma-irradiated germanium (1983) (7)
- Patterning of thin film NiMnSb using inductively coupled plasma etching (1998) (7)
- Effect of Ar addition in ECR CH4/H2/Ar plasma etching of GaAs, InP and InGaP (1996) (7)
- Hydrogen incorporation and its temperature stability in SiC crystals (1997) (7)
- Effect of PECVD of SiO2 passivation layers on GaN and InGaP (2001) (7)
- Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (2015) (7)
- Electron cyclotron resonance plasma etching of oxides and SrS and ZnS-based electroluminescent materials for flat panel displays (1998) (7)
- Effect of Drain Bias on Degradation of AlGaN/GaN High Electron Mobility Transistors under X-Band Operation (2011) (7)
- Comparison of masking materials for high microwave power CH4/H2/Ar etching of III–V semiconductors (1996) (7)
- Characterization Of Er-Doped III-V Nitride Epilayers Prepared by Mombe (1996) (7)
- A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells. (2013) (7)
- Si+ ion implanted MPS bulk GaN diodes (2004) (7)
- Electric field dependence of major electron trap emission in bulk β-Ga2O3: Poole–Frenkel effect versus phonon-assisted tunneling (2020) (7)
- Valence and Conduction Band Offsets in Sputtered LaAlO3/InGaZnO4 Heterostructures (2016) (7)
- Transition Metal Doped ZnO for Spintronics (2007) (7)
- Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors (2018) (7)
- Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3 (2018) (7)
- Effects of Co implantation in BaTiO3, SrTiO3, and KTaO3 (2003) (7)
- Dry and Wet Etch Processes for NiMnSb Heusler Alloy Thin Films (1997) (7)
- Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates (2021) (7)
- Dry Etching of BaSrTiO3 and LaNiO3 Thin Films in Inductively Coupled Plasmas (1999) (7)
- Patterning of LiGaO 2 and LiAlO 2 by Wet and Dry Etching (1996) (7)
- Band Alignment of Atomic Layer Deposited SiO2 and Al2O3 on (AlxGa1-x)2O3 for x = 0.2-0.65 (2019) (7)
- Long term stability of dry etched magnetoresistive random access memory elements (2000) (7)
- Optical investigation of nitrogen ion implanted bulk ZnO (2009) (7)
- Diffusion of Hydrogen in Semiconductors (1992) (7)
- Growth and thermal stability of Ga(1−X)CrXN films (2005) (7)
- Temperature dependent performance of ITO Schottky contacts on β-Ga2O3 (2021) (7)
- Formation of TiNx ohmic contacts to InGaAs/InP by means of a load-locked integrated process (1992) (7)
- Thermal stability of WSix and W ohmic contacts on GaN (1999) (7)
- Rapid thermal processing of WSix contacts to InP in low‐pressure N2:H2 and tertiarybutylphosphine ambients (1991) (7)
- Synthesis and characterization of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition (2006) (7)
- Stability of SiC Schottky Rectifiers to Rapid Thermal Annealing (2003) (7)
- Effect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors (2014) (7)
- Optical emission spectroscopy of electron cyclotron resonance discharges for III-V semiconductor processing (1993) (7)
- Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al0.14Ga0.86)2O3 (2019) (7)
- Effect of plasma enhanced chemical vapor deposition of SiNx on n-GaN Schottky rectifiers (2002) (7)
- Recent Progress in Implantation and Annealing of Gan and Aigan (1997) (7)
- Electrical and optical changes in AlGaAs and InGaP during dielectric etching in ECR SF6 plasmas (1997) (7)
- Role of Hydrogen in the CVD of Wide Bandgap Nitride Semiconductors (2010) (7)
- Novel carbon‐doped p‐channel GaAs metal‐semiconductor field‐effect transistor grown by metalorganic molecular beam epitaxy (1991) (7)
- N2 effect on GaAs etching at 150mTorr capacitively-coupled Cl2/N2 plasma (2010) (7)
- Electrical properties and deep traps in ZnO films grown by molecular beam epitaxy (2007) (7)
- AlInAs/GaInAs heterostructure bipolar transistors grown by metalorganic chemical vapour deposition (1989) (7)
- 2.3 kV Field-Plated Vertical Ga2O3 Schottky Rectifiers and 1 a Forward Current with 650 V Reverse Breakdown Ga2O3 Field-Plated Schottky Barrier Diodes (2018) (7)
- Moisture Insensitive PMMA Coated Pt-AlGaN/GaN Diode Hydrogen Sensor and Its Thermal Stability (2018) (7)
- Implantation tailoring of electrically active dopant profiles in GaAs (1988) (7)
- Effects of P implantation and post-implantation annealing on defect formation in ZnO (2012) (7)
- Electrical characteristics of GaN implanted with Si + at elevated temperatures (2005) (7)
- Ion implantation and dry etching characteristics of InGaAsP (λ=1.3 μm) (1993) (7)
- Characterization and annealing of Eu-doped GaN (2001) (7)
- Characterization of Ni-implanted GaN and SiC (2002) (7)
- Detection of ammonia at low concentrations (0.1–2 ppm) with ZnO nanorod-functionalized AlGaN/GaN high electron mobility transistors (2017) (7)
- Magnetron reactive ion etching of group III‐nitride ternary alloys (1996) (7)
- Inductively coupled plasma etching of CoFeB, CoZr, CoSm and FeMn thin films in interhalogen mixtures (1999) (7)
- GaN-Based Sensors (2012) (7)
- Dry etching process of GaAs in capacitively coupled BCl3-based plasmas (2010) (7)
- Thermal stability of Ti/Al/Pt/Au and Ti/Au Ohmic contacts on n-type ZnCdO (2006) (7)
- Aluminum composition dependence of reactive ion etching of AlGaAs with CCl2F2:O2 (1989) (7)
- Motion of deep gold‐related centers in reverse‐biased silicon junction diodes at room temperature (1982) (7)
- Deep traps and thermal measurements on AlGaN/GaN on Si transistors (2011) (7)
- Surface Immobilizations of AlGaN/GaN High Electron Mobility Transistor Based Sensors (2010) (7)
- Effects of proton irradiation on the magnetic properties of GaGdN and GaCrN (2008) (7)
- High selectivity Inductively Coupled Plasma etching of GaAs over InGaP (2000) (7)
- Rapid isothermal processing for fabrication of GaAs-based electronic devices (HBTs) (1992) (7)
- Effect of substrate temperature on dry etching of InP, GaAs, and AlGaAs in iodine‐ and bromine‐based plasmas (1994) (7)
- Comparison of plasma chemistries for the dry etching of bulk single-crystal zinc-oxide and rf-sputtered indium–zinc-oxide films (2007) (7)
- Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga2O3 Schottky Rectifiers (2020) (7)
- Control of nucleation site density of GaN nanowires (2007) (7)
- Deep trapping centres in n-GaAs surface barrier diodes for nuclear radiation detection (1980) (7)
- Comparison of Dry and Wet Etch Processes for Patterning SiO2 / TiO2 Distributed Bragg Reflectors for Vertical-Cavity Surface-Emitting Lasers (2001) (7)
- Hybrid electron cyclotron resonance-radio-frequency plasma etching of III–V semiconductors in Cl2-based discharges. Part I: GaAs and related compounds (1991) (7)
- Ohmic, superconducting, shallow AuGe/Nb contacts to GaAs (1986) (7)
- Chapter 8 Vibrational Spectroscopy of Hydrogen-Related Defects in Silicon (1991) (7)
- Alternative Magnesium Calcium Oxide Gate Dielectric for Silicon Carbide MOS Application (2006) (7)
- Trust us, we are experts! (2007) (6)
- Enhanced functionality in GaN and SiC devices by using novel processing (2003) (6)
- Effect of ion damage on the electrical and optical behavior of p-type GaAs and InGap (1997) (6)
- III‐Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes (2019) (6)
- Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3 (2022) (6)
- Conduction mechanisms in W and WSix ohmic contacts to InGaN and InN (1997) (6)
- Effect of CVD Temperature on Orientation, Roughness, and Chemical Mechanical Polish Removal Rate of W Thin Films (2002) (6)
- Charge pumping in Sc2O3/GaN gated mos diodes (2002) (6)
- The Growth, Characterization and Electronic Device Applications of GaAs/Si (1989) (6)
- Temperature dependence of pnp GaN/InGaN HBT performance (2004) (6)
- High‐energy (56 MeV) oxygen implantation in Si, GaAs, and InP (1990) (6)
- Annealing and Measurement Temperature Dependence of W2B- and W2B5-Based Rectifying Contacts to p-GaN (2007) (6)
- Anisotropic dry etching of submicron W features using a Ti mask (1992) (6)
- GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation (2013) (6)
- Band offsets in YSZ/InGaZnO4 heterostructure system. (2014) (6)
- Comparison of planar inductively coupled plasma etching of GaAs in BCl3, BCl3/Ar, and BCl3/Ne (2004) (6)
- Magnetic properties of Co-and Mn-implanted BaTiO 3 , SrTiO 3 and KTaO 3 (2003) (6)
- Degradation mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs (2015) (6)
- ZnO Thin-Film and Nanowire-Based Sensor Applications (2016) (6)
- GaAs / InGaP Selective Etching in BCl3 / SF 6 High‐Density Plasmas (1999) (6)
- Small signal measurement of Sc2O3 AlGaN/GaN moshemts (2004) (6)
- Wet and dry etching of Sc2O3 (2001) (6)
- Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors (2016) (6)
- Spin Dynamics in ZnO-Based Materials (2010) (6)
- AlGaN/GaN High Electron Mobility Transistor Based Sensors for Bio-Applications (2011) (6)
- Novel fabrication of self-aligned and microwave power heterojunction bipolar transistors (1995) (6)
- Trap detection in electrically stressed AlGaN/GaN HEMTs using optical pumping (2012) (6)
- Temperature-Dependent Electrical Characteristics of β-Ga2O3 Diodes with W Schottky Contacts up to 500°C (2019) (6)
- Wet and dry etching of LiGaO2 and LiAlO2 (1996) (6)
- Development of advanced plasma process with an optical emission spectroscopy-based end-point technique for etching of AlGaAs over GaAs in manufacture of heterojunction bipolar transistors (2002) (6)
- Thermal simulation of laser lift-off AlGaN/GaN high electron mobility transistors mounted on AlN substrates (2011) (6)
- Trilayer lift‐off metallization process using low temperature deposited SiNx (1992) (6)
- Hydrogen passivation of a nickel‐related defect in germanium (1983) (6)
- Improved crystalline quality nonpolar a-GaN films grown by hydride vapor phase epitaxy (2008) (6)
- In-based p ohmic contacts to the base layer of AlGaAs/GaAs heterojunction bipolar transistor (1991) (6)
- Use of 370 nm UV light for selective-area fibroblast cell growth (2005) (6)
- Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions (2002) (6)
- Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation (2012) (6)
- Growth of InGaP by metalorganic molecular beam epitaxy using novel Ga sources (1993) (6)
- Selective and non-selective wet chemical etching of GaAs0.93P0.07 (1996) (6)
- In Situ Observation of β-Ga2O3 Schottky Diode Failure Under Forward Biasing Condition (2020) (6)
- Electrical and optical properties of hydrogen plasma treated n-AlGaN films grown by hydride vapor phase epitaxy (2004) (6)
- ZnO-BASED NANOWIRES (2007) (6)
- GaN pnp bipolar junction transistors operated to 250 °C (2000) (6)
- Hydrogen in Semiconductors: Crystal growth and device processing (1992) (6)
- Fast SARS-CoV-2 virus detection using disposable cartridge strips and a semiconductor-based biosensor platform. (2021) (6)
- Impact of electron injection on carrier transport and recombination in unintentionally doped GaN (2020) (6)
- W and WSix Ohmic contacts on p- and n-type GaN (1999) (6)
- Annealing temperature dependence of band alignment of NiO/β-Ga2O3 (2022) (6)
- GaN Bipolar Junction Transistors with Regrown Emitters (2001) (6)
- UV excimer laser drilled high aspect ratio submicron via hole (2009) (6)
- The Motion of Deep Donor Centres in Reverse Biased n-GaAs Surface Barrier Diodes (1982) (6)
- ZrB2/Pt/Au Ohmic contacts on bulk, single-crystal ZnO (2006) (6)
- The role of the arsenic source in selective epitaxial growth of GaAs and AlGaAs by MOMBE (1993) (6)
- Dynamic Switching Characteristics of 1 A Forward Current β-Ga 2 O 3 Rectifiers (2019) (6)
- A comparative study of wet etching and contacts on ð 201 Þ and ( 010 ) oriented bGa 2 O 3 (2017) (6)
- W and W/WSi/In1−xAlxN ohmic contacts to n-type GaN (1999) (6)
- Inductively Coupled Plasma Etching of Ta2 O 5 (1999) (6)
- High Dose Gamma-Ray Irradiation of SiC Schottky Rectifiers (2003) (6)
- Degradation of sub-micron gate AlGaN/GaN HEMTs due to reverse gate bias (2010) (6)
- Annealing characteristics of neutron‐transmutation‐doped germanium (1984) (6)
- Plasma etching of III-nitrides in ICl/Ar and IBr/Ar plasmas (1997) (6)
- The study of low temperature hydrothermal growth of ZnO nanorods on stents and its applications of cell adhesion and viability (2009) (6)
- Immobilization of heterogeneous polydiacetylene supramolecules on SiC substrate for cyclodextrin sensors (2006) (6)
- Spatial distribution of electrical properties in GaN p-i-n rectifiers (2000) (6)
- Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77 K (2007) (6)
- Vertical β-Ga2O3 Schottky rectifiers with 750 V reverse breakdown voltage at 600 K (2021) (6)
- Low-temperature dry etching of tungsten, dielectric, and trilevel resist layers on GaAs (1994) (6)
- Magnetron reactive ion etching of AlN and InN in BCl3 plasmas (1995) (6)
- Thermal stability of deuterium in InAlN and InAlGaN (1995) (6)
- Implant activation and redistribution of dopants in GaN (1996) (6)
- High breakdown voltage in AlN/GaN metal–insulator–semiconductor high-electron-mobility transistors (2014) (6)
- Effect of contact geometry on 4H-SiC rectifiers with junction termination extension (2003) (6)
- (Invited) Radiation Effects in AlGaN/GaN and InAlN/GaN High Electron Mobility Transistors (2015) (6)
- Hydrogen-assisted pulsed-laser deposition of epitaxial CeO2 films on (001)InP (2002) (6)
- Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure (2013) (6)
- Semiconductor-Based Sensors (2016) (6)
- Radiation Damage in GaN-Based Materials and Devices (2014) (6)
- Fabrication of compositional graded Si1−xGex layers by using thermal oxidation (2009) (6)
- Ir-based diffusion barriers for Ohmic contacts to p-GaN (2008) (6)
- Cl2‐Based Inductively Coupled Plasma Etching of NiFe and Related Materials (1998) (6)
- Temperature-dependent dry etching characteristics of III–V semiconductors in HBr- and HI-based discharges (1994) (6)
- SnO2-gated AlGaN/GaN high electron mobility transistors based oxygen sensors (2012) (6)
- Superparamagnetism in Co ion‐implanted epitaxial anatase TiO2 thin films (2004) (6)
- Environmental stability of candidate dielectrics for GaN-based device applications (2009) (6)
- Band Offsets for Atomic Layer Deposited HfSiO4 on (Al0.14Ga0.86)2O3 (2018) (6)
- Variable temperature probing of minority carrier transport and optical properties in p-Ga2O3 (2022) (6)
- Hydrogen passivation in n- and p-type 6H-SiC (1997) (6)
- Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride (2007) (5)
- Admittance Spectra Studies of Quantum Well States in AlGaN/AlN/GaN Heterojunctions (2012) (5)
- Tungsten metallization onto InP prepared by rapid thermal low-pressure chemical vapor deposition of WF6 and H2 (1992) (5)
- Erratum: Evidence for the existence of a negatively charged hydrogen species in plasma‐treated n‐type Si [Appl. Phys. Lett. 56, 949 (1990)] (1990) (5)
- Hydrogenation of III-V Semiconductors during Processing (1993) (5)
- States of hydrogen in crystalline semiconductors (1989) (5)
- Dynamic Switching Characteristics of 1 A Forward Current $\boldsymbol{\beta}$ -Ga2O3 Rectifiers (2019) (5)
- ICP etching of GaAs via hole contacts (1996) (5)
- Electron cyclotron resonance plasma etching of materials for magneto-resistive random access memory applications (1997) (5)
- Y-gate submicron gate length GaAs metal-semiconductor field effect transistors (1993) (5)
- Proceedings of the Symposium on Ion Implantation and Dielectrics for Elemental and Compound Semiconductors (1990) (5)
- Measurement of external stress on bulk GaN (2006) (5)
- Annealing behavior of Ga+ implanted GaAs/AlGaAs observed by transmission electron microscopy (1987) (5)
- Detection of vitellogenin, an endocrine disrupter biomarker, using AlGaN/GaN high electron mobility transistors (2011) (5)
- Hybrid electron cyclotron resonance-RF plasma etching of TiNx thin films grown by low pressure rapid thermal metalorganic chemical vapour deposition (1991) (5)
- Improvement of drain breakdown voltage with a back-side gate on AlGaN/GaN high electron mobility transistors (2015) (5)
- Novel Properties of Hydrogen-Containing Complexes Revealed by their Hydrogen Vibrations (1995) (5)
- Ar Plasma‐Induced Damage in AlGaAs (1996) (5)
- A novel technique for RTP annealing of compound semiconductors (1998) (5)
- Reduction of Surface-Induced Current Collapse in AlGaN/GaN HFETs on Freestanding GaN Substrates (2004) (5)
- Self-Annealing in Neutron-Irradiated AlGaN ∕ GaN High Electron Mobility Transistors (2009) (5)
- Dry surface cleaning of plasma‐etched high electron mobility transistors (1993) (5)
- Inductively Coupled Plasma Etching of Doped GaN Films with Cl2 / Ar Discharges (2000) (5)
- Circular and Rectangular Via Holes Formed in SiC via Using ArF Based UV Excimer Laser (2011) (5)
- Effect of oxygen plasma treatment on nonalloyed Al/Ti-based contact for high power InGaN/GaN vertical light-emitting diodes (2013) (5)
- Redistribution of Implanted Hydrogen in p+ GaAs(Zn) and n+ GaAs(Si) Crystais (1987) (5)
- Hydrogen passivation of Si δ-doped GaAs grown by molecular beam epitaxy (1990) (5)
- Formation of Narrow, Dry‐Etched Mesas for Long Wavelength InP ‐ InGaAsP Lasers (1993) (5)
- GaN epitaxial films grown by hydride vapor phase epitaxy on polycrystalline chemical vapor deposition diamond substrates using surface nanostructuring with TiN or anodic Al oxide (2010) (5)
- 193 nm excimer laser lift-off for AlGaN/GaN high electron mobility transistors (2012) (5)
- Effect of Annealing on the Band Alignment of ALD SiO2 on (AlxGa1-x)2O3 for x = 0.2 - 0.65 (2019) (5)
- GaN Device Processing (1997) (5)
- Magnetic effects of direct ion implantation of Mn and Fe into p-GaN (2002) (5)
- Measurement of Band Offsets in Y 2 O 3 /InGaZnO 4 Heterojunctions (2014) (5)
- Spin injection and spin loss in GaMnN/InGaN Light‐Emitting Diodes (2005) (5)
- Carbon doped GaAs and AlGaAs grown by OMVPE: doping properties, oxygen incorporation, and hydrogen passivation (1993) (5)
- Editors’ Choice—Vibrational Properties of Oxygen-Hydrogen Centers in H+- and D+-Implanted Ga2O3 (2020) (5)
- Selective etching of GaAs over Al0.2Ga0.8As semiconductor in pulsed DC BCl3/SF6 plasmas (2012) (5)
- Comparison of plasma chemistries for patterning InP-based laser structures (1994) (5)
- Low-resistance Au and Au∕Ni∕Au Ohmic contacts to p-ZnMgO (2005) (5)
- Plasma etching of III–V semiconductors in BCl3 chemistries: Part II: InP and related compounds (1997) (5)
- Normally-Off Operation of Recessed-Gate AlGaN/GaN HFETs for High Power Applications (2011) (5)
- Dopant passivation in AlInAs and InGaP by atomic deuterium (1991) (5)
- Thermal Considerations in Design of Vertically Integrated Si ∕ GaN ∕ SiC Multichip Modules (2006) (5)
- Microdisk laser structures formed in III–V nitride epilayers (1997) (5)
- Comparison of chlorine- and fluorine-based inductively coupled plasmas for dry etching of InGaZnO4 films (2013) (5)
- Comparison of dc performance of Pt/Ti/Au- and Ni/Au-Gated AlGaN/GaN High Electron Mobility Transistors (2011) (5)
- Single wafer integrated processes by RT-LPMOCVD modules — application in the manufacturing of InP-based laser devices (1992) (5)
- Chapter 5 Etching of III Nitrides (1997) (5)
- Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN (2007) (5)
- Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers (2003) (5)
- Normally‐on/off AlN/GaN high electron mobility transistors (2010) (5)
- Effect of deposition condition on wet and dry etch rates of device quality inductively coupled plasma-chemically vapor deposited SiNx (1998) (5)
- Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths. (2002) (5)
- InN-Based Chemical Sensors (2016) (5)
- The nature of the dominant γ-induced defects in high-purity germanium (1984) (5)
- The mobility of a nickel-related centre in reverse biased germanium n+p diodes (1983) (5)
- TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures (2010) (5)
- Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn (2003) (5)
- Low temperature processing of indium-tin-zinc oxide channel layers in fabricating thin-film transistors (2011) (5)
- Process development for III-V nitrides (1996) (5)
- Point defect creation by proton and carbon irradiation of α-Ga2O3 (2022) (5)
- Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors (2011) (5)
- Defects in Electron and Neutron Irradiated n-GaN: Disordered Regions Versus Point Defects (2006) (5)
- Nonselective vertical etching of GaAs and AlGaAs/GaAs in high pressure capacitively coupled BCl3/N2 plasmas (2010) (5)
- High‐Density Etching of Group III Nitride Ternary Films (1996) (5)
- Nonalloyed high temperature ohmic contacts on Te-doped InP (1999) (5)
- Electron Cyclotron Resonance Plasma Etching of AlGaN in Cl2/Ar and BCl3/Ar Plasmas (1997) (5)
- Thermal stability of WSiX Schottky contacts on n-type 4H-SiC (2004) (5)
- Shallow and Deep Centers in As-Grown and Annealed MgZnO/ZnO Structures with Quantum Wells (2010) (5)
- Electrical Effects of Ar Plasma Damage on GaN Diode Rectifiers (1999) (5)
- Inductively coupled plasma etching of InGaP, AllnP, and AlGaP in Cl2 and BCl3 chemistries (1998) (5)
- Isolation properties and experimental ranges of high energy ions in GaAs and InP (1992) (5)
- Dry etching of MgCaO gate dielectric and passivation layers on GaN (2006) (5)
- Optical absorption and temperature-dependent resistivity of GaMnN grown by molecular beam epitaxy (2002) (5)
- Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy (1997) (5)
- Activation Characteristics of Implanted Dopants in InAs, GaSb and GaP After Rapid Thermal Annealing (1988) (5)
- Electrical properties of nanoscale Au contacts on 4H-SiC (2009) (5)
- High-performance AlGaAs/GaAs SDHTs and ring oscillators grown by MBE on Si substrates (1989) (5)
- Optical properties of undoped n-AlGaN/GaN superlattices as affected by built-in and external-electric field and by ar-implantation-induced partial disordering (2002) (5)
- The feasibility of using trimethylamine alane as an Al precursor for MOMBE (1991) (5)
- Initial growth stages of AlxGa1 − xP on epitaxial silicon (1996) (5)
- Comparison of plasma chemistries for inductively coupled plasma etching of InGaAlP alloys (1998) (5)
- Single-electron capacitance spectroscopy of semiconductor microstructures (1993) (5)
- Iodine- and Bromine-Based Dry Etching of LaCaMnO3 (1999) (5)
- Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates (2016) (4)
- Carbon implantation in AlxGa1−xAs (1996) (4)
- Microwave Wireless Power Transmission - A System Perspective (2006) (4)
- Functionalized GaN Based Transistors For Biosensing (2013) (4)
- Simulation and experimental study of ArF 193 nm laser lift-off AlGaN/GaN high electron mobility transistors (2012) (4)
- The effects of ionizing radiation on GaAs/AlGaAs and InGaAs/AlInAs heterojunction bipolar transistors (1993) (4)
- Selective Etching of Wide Bandgap Nitrides (1997) (4)
- Nitrogen ion-implanted resistive regions for edge termination of vertical Ga2O3 rectifiers (2021) (4)
- Degradation by Sidewall Recombination Centers in GaN Blue micro-LEDs at Diameters < 30 um (2022) (4)
- Reduction of Sidewall Roughness During Dry Etching of SiO 2 (1992) (4)
- Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during dc stressing and thermal storage (2010) (4)
- High temperature thermal stability of Au/Ti/WSix Schottky contacts on n-type 4H-SiC (2003) (4)
- Ion Implantation Damage and its Annealing Characteristics in an AlAs/GaAs Layer Structure (1988) (4)
- Oxide Dielectrics for Reliable Passivation of AlGaN/GaN HEMTs and Insulated Gates (2006) (4)
- Evaluation of rapid thermal processing systems for use in CMOS fabrication (2002) (4)
- Susceptor and proximity rapid thermal annealing of carbon‐implanted InP (1990) (4)
- Characteristics of Thin-Film p-ZnMgO/n-ITO Heterojunctions on Glass Substrates (2004) (4)
- (Gordon E. Moore Award Presentation) Sensors Using AlGaN/GaN Based High Electron Mobility Transistor for Environmental and Bio-Applications (2013) (4)
- Impact of low dose gamma irradiation on electronic carrier transport in AlGaN/GaN High Electron Mobility Transistors (2015) (4)
- Inductively coupled plasma etch processes for NiMnSb (1998) (4)
- Ti/Au Ohmic contacts to indium zinc oxide thin films on paper substrates (2010) (4)
- Use of thermal annealing for radiation hardening of germanium to γ-rays (1982) (4)
- Passivation of AlN/GaN high electron mobility transistor using ozone treatment (2010) (4)
- Effect of BCl3 Dry Etching on InAlN Surface Properties (1996) (4)
- Hydrogen in Ga2O3 (2019) (4)
- Identification of trap locations in AlGaN/GaN high electron mobility transistors by varying photon flux during sub-bandgap optical pumping (2016) (4)
- Activation and diffusion characteristics of implanted Si and Be in Al0.5In0.5P (1992) (4)
- p-Ohmic Contact Study for Intracavity Contacts in AlGaAs/GaAs Vertical Cavity Surface-Emitting Lasers (2001) (4)
- The mobility of γ-ray induced defects in reverse biased germanium n+p diodes (1982) (4)
- Dry etching and implant isolation characteristics of AlxGa1-xAs grown by metal organic molecular beam epitaxy (1991) (4)
- Electrical and optical properties of Fe doped AlGaN grown by molecular beam epitaxy (2010) (4)
- Effects of Sc2 O 3 Surface Passivation on Deep Level Spectra of AlGaN/GaN High Electron Mobility Transistors (2004) (4)
- Very Low Sheet Resistance AlN / GaN High Electron Mobility Transistors (2009) (4)
- Electron cyclotron resonance microwave plasma etching of In0.2Ga0.8As-GaAs quantum well laser structures (1991) (4)
- Dry Etching Techniques and Chemistries for III-V Semiconductors (1990) (4)
- The role of crystal-growth properties on silicon implant activation processes for GaAs (1988) (4)
- Room temperature operation of a sub-micron radius disk laser (1993) (4)
- Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- and 10 MeV proton-irradiated Si-doped β-Ga2O3 Schottky rectifiers (2021) (4)
- Electrical properties of MBE grown layers of AlGaAsSb and the effects of proton implantation and hydrogen plasma treatment (1993) (4)
- Quenched-in deep acceptors in germanium (1984) (4)
- Low damage dry etching of III–V compound semiconductors using electron cyclotron resonance discharges (1991) (4)
- Recent advances in wide bandgap semiconductor-based gas sensors (2013) (4)
- New gamma-radiation damage centres observed in germanium by deep level transient spectroscopy (1982) (4)
- Band Offsets of Insulating & Semiconducting Oxides on (AlxGa1-x)O3 (2019) (4)
- Self-aligned, metal-masked dry etch processing of III–V electronic and photonic devices (1992) (4)
- Thermal stability and etching characteristics of electron beam deposited SiO and SiO2 (2000) (4)
- Study on Effect of Proton Irradiation Energy in AlGaN/GaN Metal-Oxide Semiconductor High Electron Mobility Transistors (2015) (4)
- Reactive Ion Beam Etching of In-Containing Compound Semiconductors in an Inductively Coupled Cl2/Ar Plasma (2003) (4)
- Characterization of pseudomorphic InGaAs channel modulation-doped field-effect-transistor structures grown by molecular-beam epitaxy (1990) (4)
- Characterization of n‐type regions in GaAs formed by silicon fluoride molecular ion implantations (1989) (4)
- Growth of GaN, AlN and InN by Electron Cyclotron Resonance-Metal Organic Molecular Beam Epitaxy (1992) (4)
- Guest Editorial Special Issue on Light-Emitting Diodes (2010) (4)
- GaN-based light-emitting diodes by laser lift-off with micro- and nano-sized reflectors (2012) (4)
- BCl3/Ne etching of III–V semiconductors in a planar inductively coupled plasma reactor (2004) (4)
- Investigation of a GaMnN/GaN/InGaN structure for spin LED (2005) (4)
- Fermi Resonance Effects on the Vibration Modes of Hydrogen-Passivated Boron in Silicon (1989) (4)
- New high-rate dry etch mixture for INP-based heterostructures (1992) (4)
- Dry etch selectivity of Gd2O3 to GaN and AlN (2000) (4)
- A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs (2000) (4)
- Epitaxial growth of CeO2 on (100) InP using reactive r.f. magnetron sputtering (2002) (4)
- Wet chemical etch solutions for Al{sub x}Ga{sub 1{minus}x}P (1996) (4)
- EBIC investigations of defect distribution in ELOG GaN films (2009) (4)
- GaN films annealed under high pressure (2003) (4)
- Radiation damage in Ga2O3 (2019) (4)
- Comparison of dry etching techniques for InGaP, AlInP and AlGaP (1996) (4)
- Incorporation and Optical Activation of Er in Group III-N Materials Grown by Metalorganic Molecular Beam Epitaxy (1997) (4)
- Design of Ga2O3 modulation doped field effect transistors (2021) (4)
- Hydrogen passivation of nitrogen in GaNAs and GaNP alloys: How many H atoms are required for each N atom? (2007) (4)
- Low Temperature (< 100{degree sign}C) Patterned Growth of ZnO Nanorod Arrays on Si (2007) (4)
- Thermo-mechanical aspects of gamma irradiation effects on GaN HEMTs (2022) (4)
- Structural and electrical properties of thick κ-Ga2O3 grown on GaN/sapphire templates (2022) (4)
- Optimization of conductivity in p-type GaN∕InGaN-graded superlattices (2005) (4)
- Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition (1999) (4)
- Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries. Part II: InP, InSb, InGaP, and InGaAs (1998) (4)
- Erratum: “Effect of gate orientation on dc characteristics of Si-doped, nonpolar AlGaN/GaN metal-oxide semiconductor high electron mobility transistors” [Appl. Phys. Lett. 95, 082110 (2009)] (2009) (4)
- Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors (2017) (4)
- Dry Etching of MRAM Structures (2000) (4)
- Chapter 5 Neutralization of Deep Levels in Silicon (1991) (4)
- Nanoengineering of Semiconductor Nanowires-Synthesis, Processing and Sensing Applications (2011) (4)
- The influence of hydrogen plasma treatment on reverse currents in InGaP and InGaAlP (1995) (4)
- Recent advances in gate dielectrics and polarised light emission from GaN (2002) (4)
- GaN enhancement mode metal‐oxide semiconductor field effect transistors (2005) (4)
- Role of graphene interlayers in mitigating degradation of Ni/Au ohmic contact morphology on p-type GaN (2016) (4)
- Catalyst-Free Patterned Growth of Well-Aligned ZnO Nanowires on ITO Substrates Using an Aqueous Solution Method and Lithography Process (2010) (4)
- MEMS-Based Optical Chemical Sensors (2016) (4)
- Formation of dry etched gratings in GaN and InGaN (1997) (4)
- Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing (2015) (4)
- Growth of InP epitaxial layers by rapid thermal low pressure metalorganic chemical vapor deposition, using tertiarybutylphosphine (1993) (4)
- Review—Opportunities in Single Event Effects in Radiation-Exposed SiC and GaN Power Electronics (2021) (4)
- Effects of Oxide Thickness and Gate Length on DC Performance of Submicrometer MgO/GaN MOSFETs (2003) (4)
- Use of CF3,Br/Al, discharges for reactive ion etching of III-V semiconductors (1991) (4)
- Study of the Effects of GaN Buffer Layer Quality on the dc Characteristics of AlGaN/GaN High Electron Mobility Transistors (2015) (4)
- Microwave Performance of AlGaN/GaN High-Electron-Mobility Transistors on Si/SiO2/Poly-SiC Substrates (2008) (4)
- Will surface effects dominate in quasi-two-dimensional gallium oxide for electronic and photonic devices? (2019) (4)
- Optical and electrical properties of AlGaN films implanted with Mn, Co, or Cr (2004) (4)
- Lattice Mismatched Heteroepitaxial Growth Of GaAs On InP bY Organometallic Vapor Phase Epitaxy. (1989) (4)
- The effect of N2 plasma damage on AlGaAs/InGaAs/GaAs high electron mobility transistors. I. DC characteristics (2000) (4)
- A high efficiency class‐F power amplifier using AIGaN/GaN HEMT (2006) (4)
- Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga2O3 (2021) (4)
- Stability of hydrogen in ScAlMgO4 (1997) (3)
- Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries. Part I: GaAs, GaSb, and AlGaAs (1998) (3)
- Thermal stability of band offsets of NiO/β-GaN (2022) (3)
- Fabrication and characteristics of high speed implant-confined, index-guided, lateral-current, 850 nm vertical cavity surface emitting lasers (2002) (3)
- Lateral schottky GaN rectifiers formed by Si+ ion implantation (2004) (3)
- Dry etched mesas for buried heterostructure InGaAsP/InP lasers using electron cyclotron resonance Cl2/CH4/H2/Ar discharges (1994) (3)
- Comparison of ECR plasma chemistries for etching of InGaP and AlGaP (1997) (3)
- Effect of Cryogenic Temperature Deposition of Various Metal Contacts on Bulk Single-Crystal n-Type ZnO (2007) (3)
- C implantation and surface degradation of InGaP (1996) (3)
- High three-terminal breakdown voltage and output power of Sc2O3 passivated AlGaN/GaN high electron mobility transistors (2003) (3)
- Dry Etch Damage In InN, InGaN and InAIN (1996) (3)
- Optical Characterization of Zn1-xCdxO Alloys Grown by Molecular-Beam Epitaxy (2006) (3)
- ZnCdO/ZnMgO and ZnO/AlGaN Heterostructures for UV and Visible Light Emitters (2005) (3)
- Band offsets in sputtered Sc2O3/InGaZnO4 heterojunctions (2017) (3)
- Comparison of ZnO Dry Etching in High Density Inductively Coupled CH4/H2 and C2H6/H2-Based Chemistries (2006) (3)
- Surface morphology and optical properties of ZnO epilayers grown on Si(111) by metal organic chemical vapor deposition (2009) (3)
- Highly stable silicon dioxide films deposited by means of rapid thermal low‐pressure chemical vapor deposition onto InP (1991) (3)
- Wet chemical etching of NiFe, NiFeCo AND NiMnSb for magnetic device fabrication (1998) (3)
- New plasma chemistries for etching III–V compound semiconductors: Bl3 and BBr3 (1999) (3)
- Dependence of Zn1−xMgxO:P film properties on magnesium concentration (2008) (3)
- RBS Lattice Site Location and Damage Recovery Studies in GaN (1999) (3)
- (Invited) Effect of Annealing on Electronic Carrier Transport Properties of Gamma-Irradiated AlGaN/GaN High Electron Mobility Transistors (2014) (3)
- Process Design for Non-Alloyed Contacts to InP-Based Laser Devices (1990) (3)
- Thermoreflectance Temperature Mapping of Ga2O3 Schottky Barrier Diodes (2019) (3)
- Growth of Pnp heterojunction bipolar transistor structures by metalorganic molecular beam epitaxy (1992) (3)
- Wet Chemical Etch Solutions for AlxGa1-xP. (2010) (3)
- MO-CVD GaAs Grown by Direct Deposition on Si (1987) (3)
- Progress in Wide Bandgap Ferromagnetic Semiconductors and Semiconducting Oxides (2004) (3)
- Investigation of masking materials for high-ion-density plasma etching of GaAs (1996) (3)
- (Invited) The Resurgence of III-N Materials Development: AlInN HEMTs and GaN-on-Si (2011) (3)
- AC transport measurement of Mn ion-implanted p + -GaAs:C (2004) (3)
- Long-term stability at 200 degrees C of implant-isolated GaAs (1993) (3)
- Degradation of GaAs/AlGaAs heterojunction bipolar transistors with ion-implant isolation (2002) (3)
- Wet Chemical Etching of LiGaO2 and LiAlO2 (2001) (3)
- Electrical effects of plasma enhanced chemical vapor deposition of SiNx on GaAs Schottky rectifiers (2001) (3)
- Room-temperature lasing action in In o . 5 , Gao . ~ 9 P / lno . 2 Ga ~ . ~ As microcylinder laser diodes (1999) (3)
- Ion beam processing and rapid thermal annealing of InP and related compounds (1990) (3)
- Chapter 4 Hydrogen Passivation of Damage Centers in Semiconductors (1991) (3)
- Wireless Hydrogen Sensor Networks Using AlGaN/GaN High Electron Mobility Transistor Based Differential Diodes Sensor (2008) (3)
- Microcathodoluminescence and electrical properties of GaN epitaxial layers grown on thick freestanding GaN substrates (2006) (3)
- Shallow Impurity Passivation by Atomic Hydrogen (1992) (3)
- Characterization of Modulation Doped Pseudomorphic AlGaAs/InGaAs/GaAs Hemt Structures by Electron Beam Electroreflectance and Photoluminescence (1989) (3)
- Proton Irradiation of High Aluminum Content AlGaN Polarization Doped Field Effect Transistors (2020) (3)
- Sulfide Passivated GaAs/AlGaAs Microdisk Lasers (1994) (3)
- Ferromagnetic and Structural Properties of Mn-Implanted p-GaN (2001) (3)
- Damage to III–V devices during electron cyclotron resonance chemical vapor deposition (1999) (3)
- Ultraviolet light enhancement of Ta2O5 dry etch rates (2000) (3)
- Oxide thin film transistors on novel flexible substrates (2010) (3)
- Planar Inductively Coupled BCl3 Plasma Etching of III-V Semiconductors (2004) (3)
- Hydrogen in Compound Semiconductors-Introduction (1993) (3)
- p-Ohmic contact resistance for GaAs(C)/GaN(Mg) (2000) (3)
- Chapter 5 – Hydrogen in wide bandgap semiconductors (2001) (3)
- Fast Cerebrospinal Fluid Detection Using Inexpensive Modular Packaging with Disposable Testing Strips (2019) (3)
- Ir-Based Schottky and Ohmic Contacts on n-GaN (2007) (3)
- Effect of hydrogen treatment on electrically active centers in AlGaAsSb (1992) (3)
- Band offsets in HfSiO4/IGZO heterojunctions (2015) (3)
- Selective Dry Etching of the GaN/InN/AlN, GaAs/AlGaAs and GaAs/InGaP Systems (1999) (3)
- Plasma etching of magnetic multilayers — effect of concurrent UV illumination (1999) (3)
- Ferromagnetism in Mn- and Cr-implanted AlGaP (2003) (3)
- Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal–insulator semiconductor high electron mobility transistors (2018) (3)
- Electrical and optical properties of doped p-type GaN superlattices (2006) (3)
- Plasma-induced damage and hydrogenation of AlxGa1−xP (1996) (3)
- Processing challenges for GaN-based photonic and electronic devices (1997) (3)
- Design and Fabrication of GaN High Power Rectifiers (2005) (3)
- Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A. (1992) (3)
- New type of defects related to nonuniform distribution of compensating centers in p-GaN films (2003) (3)
- AlGaN/GaN heterostructure based Pt nanonetwork Schottky diode with water-blocking layer (2020) (3)
- Crystal growth of gallium nitride and manganese nitride using an high pressure thermal gradient process (2003) (3)
- Passivation of dopants in InGaP using ECR hydrogenation (1996) (3)
- Epitaxial Growth of Dilute Magnetic Semiconductors: GaMnN and GaMnP (2001) (3)
- Effects of Downstream Plasma Exposure on β-Ga2O3 Rectifiers (2021) (3)
- Redistribution of Hydrogen in Gan, Ain, and Inn (1994) (3)
- Study of NH 3 Plasma Damage on GaAs Schottky Diode in Inductively Coupled Plasma System (1999) (3)
- New dry-etch chemistries for III–V semiconductors (1994) (3)
- Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Based Gate Metallization (2011) (3)
- Hybrid electron cyclotron resonance-radio-frequency plasma etching of III–V semiconductors in Cl2-based discharges. Part II: InP and related compounds (1991) (3)
- Removal of chemical–mechanical polishing-induced damage layer in single crystal La3Ga5SiO14 by inductively coupled plasma etching (2005) (3)
- Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy (2008) (3)
- Reaction-Limited Wet Etching of CuCrO2 (2007) (3)
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- Comparison of and plasma chemistries for dry etching of InGaAlP alloys (1996) (3)
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- Selective regrowth of InP and GaAs by organometallic vapor phase epitaxy and metalorganic molecular beam epitaxy around dry etched features (1993) (3)
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- Simulated High-Temperature Characteristics of Sc2 O 3 / GaN MOSFETs (2003) (3)
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- Degradation mechanisms in III-V compound semiconductor devices and structures : symposium held April 17-18, 1990, San Francisco, California, U.S.A. (1990) (3)
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- AlGaN/GaN HEMT And ZnO nanorod-based sensors for chemical and bio-applications (2009) (3)
- Carbon-doped GaAs grown by organometallic vapor phase epitaxy using tris-dimethylaminoarsenic and CCl4 (1994) (3)
- Impurity-hydrogen complexes in β-Ga2O3: Hydrogenation of shallow donors vs deep acceptors (2022) (3)
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- A facile method for flexible GaN‐based light‐emitting diodes (2012) (3)
- Impact of radiation and electron trapping on minority carrier transport in p-Ga2O3 (2022) (3)
- Electrical properties of α-Ga2O3 films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3 buffers (2022) (3)
- Characterization of degradation mechanisins in GaAs/AlGaas heterojunction bipolar transistors (1994) (2)
- Radiation Damage in the Ultra-Wide Bandgap Semiconductor Ga2O3 (2022) (2)
- Comparison Of F 2 Plasma Chemistries For Deep Etching Of SiC (2000) (2)
- Electrical and Structural Properties of Two-Inch Diameter (001) α-Ga2O3 Films Doped with Sn and Grown by Halide Epitaxy (2022) (2)
- The use of laser doped Li contacts on semiconductor nuclear radiation detectors (1981) (2)
- High yield scalable dry etch process for indium based heterojunction bipolar transistors (1992) (2)
- High resolution dry etching of III–V semiconductor materials using magnetically enhanced discharges (1994) (2)
- Rapid thermal low-pressure chemical vapour deposition of tungsten films onto InP using WF6 and H2 (1992) (2)
- Hydrogen Centers in β-Ga2O3: Infrared Spectroscopy and Density Functional Theory (2019) (2)
- Role of C, O and H in III-V Nitrides (1995) (2)
- Micro-Raman studies of thermal stress effects in GaN heteroepitaxial layers and self-heating effects in AlGaN/GaN HEMT structures (2005) (2)
- ZrB2-based Ohmic contacts to p-GaN (2006) (2)
- Alloyed contacts to susceptor rapid thermal annealed Si‐implanted InP (1991) (2)
- Influence of PECVD of SiO2 passivation layers on 4H-SiC Schottky rectifiers (2003) (2)
- Asymmetrical Contact Geometry to Reduce Forward-Bias Degradation in β-Ga2O3 Rectifiers (2020) (2)
- Temperature dependence of on–off ratio and reverse recovery time in NiO/β-Ga2O3 heterojunction rectifiers (2022) (2)
- Partially doped GaAs single-quantum-well FET (1989) (2)
- Zn and Si Co-Doped InGaN/AlGaN Double-Heterostructure Blue and Blue-Green LEDs (1997) (2)
- Improved Au Schottky contacts on GaAs using cryogenic metal deposition (2006) (2)
- Electrical Effects in GaAs and AlGaAs during Inductively Coupled Plasma‐Enhanced Chemical Vapor Deposition of SiN x Films (1999) (2)
- Alpha Particle Irradiation of High Aluminum Content AlGan Polarization Doped Field Effect Transistors (2020) (2)
- Transparent Thin Film Transistors Based on InZnO for Flexible Electronics (2008) (2)
- Dislocations introduced in n-GaN at room temperature cause conductivity inversion (2021) (2)
- Effect of annealing on electronic carrier transport properties of gamma-irradiated AlGaN/GaN high electron mobility transistors (2014) (2)
- Reduction in γ-ray damage in hydrogenated germanium (1982) (2)
- Size-Dependent UV Photosensitivity of Indium Zinc Oxide (2010) (2)
- Laterally overgrown GaN/InGaN multi‐quantum well heterostructures: Electrical and optical properties (2010) (2)
- Effects of sapphire substrate orientation on Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy using α-Cr2O3 buffers (2022) (2)
- Small and large signal performance and gain-switching of intra-cavity contacted, shallow implant apertured VCSELs (2001) (2)
- Orientation and dielectric overlayer effects in InGaP/GaAs heterojunction bipolar transistors (2002) (2)
- Effect of mosaic structure on mobilities in p-GAN films and superlattices as revealed by multifractal analysis of atomic force microscope images of the surface (2003) (2)
- Random Scattering Optical Couplers for Quantum Well Infrared Photodetectors (1994) (2)
- Process development for small-area GaN/AlGaN heterojunction bipolar transistors (2001) (2)
- Activation annealing of Si-implanted GaN up to 1500°C using a novel RTP technique (1998) (2)
- HVPE Growth and Characterization of Thick κ-Ga2O3 Layers on GaN/Sapphire Templates (2023) (2)
- Ferromagnetic and Paramagnetic Semiconductors Based upon GaN, AlGaN, and GaP (2001) (2)
- Comparison of dry etching of III-V semiconductors in ICl/Ar and IBr/Ar electron cyclotron resonance plasmas (1997) (2)
- High Density Plasma Damage in InGaP/GaAs and AlGaAs/GaAs High Electron Mobility Transistors (1998) (2)
- Wide Bandgap Materials for Semiconductor Spintronics (2003) (2)
- Changes in band alignment during annealing at 600 °C of ALD Al2O3 on (InxGa1 − x)2O3 for x = 0.25–0.74 (2020) (2)
- 190nm excimer laser drilling of glass slices: Dependence of drilling rate and via hole shape on the diameter of the via hole (2009) (2)
- Influence of edge termination geometry on performance of 4H-SiC p–i–n rectifiers (2003) (2)
- Two-Dimensional Hole Gas Formation at the Κ-Ga2o3 /Aln Heterojunction Interface (2023) (2)
- Implanted Dopant-Defect Interactons in GaAs (1987) (2)
- Non-Thermal Annealing of Gamma Irradiated GaN HEMTs with Electron Wind Force (2022) (2)
- Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers (2020) (2)
- Ferromagnetism in ZnO Doped with Transition Metal Ions (2006) (2)
- Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire (2020) (2)
- Energy Levels of Some Rare-Earth Related Impurities in Germanium (1982) (2)
- Al Composition Dependence of Band Offsets for SiO2 on α-(AlxGa1-x)2O3 (2021) (2)
- Highly doped In0.52Al0.48As growth and ohmic contact formation (1991) (2)
- Nanosensor networks for health-care applications (2020) (2)
- Nanoscale structures in III–V semiconductors using sidewall masking and high ion density dry etching (1995) (2)
- AlGaN/GaN High Electron Mobility Transistor Based Sensors for Environmental and Bio-Applications (2010) (2)
- Magnetic properties of Mn-implanted AlGaP alloys (2003) (2)
- Erratum: Band offsets in the Sc2O3∕GaN heterojunction system [Appl. Phys. Lett. 88, 142115 (2006)] (2006) (2)
- Cl2 ‐ Based Dry Etching of Doped Manganate Perovskites: PrBaCaMnO3 and LaSrMnO3 (1999) (2)
- Improved surface morphology and edge definition for ohmic contacts to AlGaN/GaN heterostructures (2009) (2)
- New plasma chemistries for dry etching of InGaAlP alloys: BI3 and BBr3 (1998) (2)
- Pt Schottky contacts to n-(Ga,Mn)N (2002) (2)
- Use of pt gate metallization to reduce gate leakage current in GaAs MESFETs (1991) (2)
- W, WSi{sub x} and Ti/Al low resistance OHMIC contacts to InGaN, InN and InAlN (1996) (2)
- The effects of buffer growth parameters on heteroepitaxial ZnO films grown by pulsed laser deposition (2008) (2)
- GaAs Quantum Well Infrared Photodetectors Grown by OMVPE (1990) (2)
- Photoelectrochemical Etching of In(x)Ga(1-x)N (1999) (2)
- Nanoscale Stress Localization Effects on the Radiation Susceptibility of GaN High‐Mobility Transistors (2022) (2)
- RF-sputtered CrB2 diffusion barrier for Ni/Au Ohmic contacts on p-CuCrO2 (2008) (2)
- Effect of Buffer Oxide Etchant (BOE) on Ti/Al/Ni/Au Ohmic Contacts for AlGaN/GaN Based HEMT (2015) (2)
- High microwave power performance of self-aligned InGaP/GaAs heterojunction bipolar transistors (1993) (2)
- Investigation of electrical and optical properties of ZnO thin films grown with O2/O3 gas mixture (2008) (2)
- Formation of p + and High Resistivity Regions in GaAs-AIGaAs Heterojunctions (1987) (2)
- Effects of hydrogen plasma treatment on electrical properties of p-AlGaN (2004) (2)
- Silver-Functionalized AlGaN/GaN Heterostructure Diode for Ethanol Sensing (2017) (2)
- Group-III Nitride Etch Selectivity in BCl 3 /Cl 2 ICP Plasmas (1998) (2)
- Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer (2020) (2)
- GaN AND AlGaN HIGH VOLTAGE POWER RECTIFIERS (2003) (2)
- Annealing temperature dependence of TiB2 schottky barrier contacts on n-GaN (2006) (2)
- Grain Boundaries in Germanium: Effects of Exposure to Plasmas (1984) (2)
- Hydrogen and the Mechanical Properties of Semiconductors (1992) (2)
- Dry etching of GaAs in high pressure, capacitively coupled BCl3∕N2 plasmas (2009) (2)
- Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells (2021) (2)
- Nitride-based Ohmic and Schottky Contacts to GaN (2007) (2)
- Ir ∕ Au Ohmic Contacts on Bulk, Single-Crystal n-Type ZnO (2007) (2)
- Inductively Coupled Plasma Etching of III-Nitrides in Cl 2 /Xe, Cl 2 /Ar AND Cl 2 /He (1998) (2)
- Magneto‐optical spectroscopy of spin injection and spin relaxation in ZnMnSe/ZnCdSe and GaMnN/InGaN spin light‐emitting structures (2007) (2)
- High Resistivity InAIN by Nitrogen or Oxygen Implantation (1995) (2)
- Ultra-thin laser-aided doped Li contacts on high-purity germanium nuclear radiation detectors (1981) (2)
- Comparison of the effects of H2 and D2 plasma exposure on AlGaAs/GaAs high electron mobility transistors (2001) (2)
- Semiconductor microdisk lasers (1992) (2)
- Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (Adv. Electron. Mater. 3/2019) (2019) (2)
- High-dose Mn and Cr implantation into p-AlGaN films (2004) (2)
- P-type ZnO thin films via phosphorus doping (2008) (2)
- Rapid thermal low pressure metalorganic chemical vapor deposition of In0.53Ga0.47As films using tertiarybutylarsine (1993) (2)
- Advanced processing of group-III nitrides (2002) (2)
- Hydrogen in Silicon-Unanswered Questions (1985) (2)
- Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth (2022) (2)
- A Novel Approach to Improve Heat Dissipation of AlGaN/GaN High Electron Mobility Transistors with a Backside Cu Via (2015) (2)
- Growth of a-plane ZnO Thin Films on r-plane Sapphire by Plasma-assisted MBE (2005) (2)
- Effects of Ar inductively coupled plasma exposure on 4H-SiC Schottky rectifiers (2002) (2)
- Rapid SARS-CoV-2 diagnosis using disposable strips and a metal-oxide-semiconductor field-effect transistor platform. (2022) (2)
- Novel carbon-doped p-channel GaAs MESFET grown by MOMBE (1992) (2)
- Influence of SiO2 PECVD layers on p-GaN rectifiers (2002) (2)
- Deep Level Impurities in Germanium and Silicon: Low Temperature Passivation or Removal Techniques (1983) (2)
- Acceptor state formation in arsenic‐doped ZnO films grown using ozone (2008) (2)
- Hydrogen passivation effects in quaternary solid solutions of InGaAsSb lattice matched to GaSb (1994) (2)
- Plasma etching of InGaP, AlInP and AlGaP in BCl3 environments (1996) (2)
- GaAs via-hole etching and MOMBE regrowth (1992) (2)
- Persistent photoconductivity in MgZnO alloys (2009) (2)
- Deep level impurities in semiconductors for nuclear radiation detection (1981) (2)
- High-speed modulation of single-mode and multi-mode 850 nm, intra-cavity contacted, shallow implant-apertured, vertical-cavity surface-emitting lasers (2001) (2)
- Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors (2000) (2)
- Wet Chemcial Etching of Compound Semiconductors (2006) (2)
- Damage Removal Processes in Ion Implanted, Rapidly Annealed GaAs (1985) (2)
- Thermal and electrical stability of gamma-ray induced defects in germanium (1982) (2)
- AlGaN/GaN High electron mobility transistors and diodes fabricated on large area silicon on poly-SiC (SopSiC) substrates for lower cost and higher yield (2007) (2)
- A Comprehensive Approach to HEMT Reliability Testing (2009) (2)
- Band alignments of dielectrics on (− 201) β-Ga2O3 (2019) (2)
- Device degradation during low temperature ECR-CVD. Part I: GaAs MESFETs (1998) (2)
- The use of GaN based electronic and photonic devices for bio-applications (2006) (2)
- Hydrogen-Related Defects in Semiconductors (1992) (2)
- Off-Axis Motions and Distortions in Acceptor-H Complexes from Uniaxial Stress Studies (1991) (2)
- (Invited) Microstrucutural Characterizaton of Stressed AlGaN/GaN HEMT Devices (2014) (2)
- Invited) Hydrogen Sensing Characteristics of Gallium Nitrides with Various Crystal Planes (2014) (2)
- High Quality p-Type GaN Deposition on c-Sapphire Substrates in a Multiwafer Rotating-Disk Reactor. (1996) (2)
- Determination of the Reliability of AlGaN/GaN HEMTs through Trap Detection Using Optical Pumping (2012) (2)
- The influence of hydrogen plasma treatment and proton implantation of electrical properties of AlGaAsSb (1993) (2)
- 2.6 A, 0.69 MW cm -2 single-chip bulk GaN p-i-n rectifier (2004) (2)
- Investigating the effect of thermal annealing on dc performance of off-state drain-voltage step-stressed AlGaN/GaN high electron mobility transistors (2015) (2)
- Keynote) Advances in Ga 2 O 3 Processing and Devices (2017) (2)
- Effects of Ni implantation into bulk and epitaxial GaP on structural and magnetic characteristics (2002) (2)
- ZnO Nanowires for Sensing and Device Applications (2007) (2)
- Enhanced etch rates of tri-level resist stacks in microwave discharges (1993) (2)
- High Density Dry Etching of (Ba,Sr)TiO3 and LaNiO3 (1999) (2)
- Ultra High Temperature Rapid Thermal Annealing of GaN (1998) (1)
- Local strain modification effects on global properties of AlGaN/GaN high electron mobility transistors (2022) (1)
- Novel In Situ Ion Bombardment Process for a Thermally Stable ( > 800 ° C ) Plasma Deposited Dielectric (1999) (1)
- INDUCTIVELY COUPLED PLASMA ETCHING OF III-NITRIDES IN Cl2/Xe, Cl2/Ar AND Cl2/He (1998) (1)
- A semiconductor biography (2005) (1)
- Comparison of the effects of H2 and D2 plasma exposure on GaAs MESFETs (2001) (1)
- Digital biosensor for human cerebrospinal fluid detection with single-use sensing strips. (2022) (1)
- Novel plasma chemistries for highly selective dry etching of InxGaN1-x:BI3 and BBr3 (1999) (1)
- Decay Kinetics of Growth-Induced Alignment of the First Neighbor Shell of CAs in AlxGa1-xAs (1997) (1)
- Electrical characteristics of p-GaN Schottky rectifiers after PECVD SiNx passivation (2002) (1)
- Fabrication processing of ZnO-Based LEDs (2006) (1)
- Comparison of ICl and IBr Plasma Chemistries for Etching of InGaAlP Alloys (1996) (1)
- Comparison of implant isolation species for GaN field-effect transistor structures (1999) (1)
- Degradation of AlGaN/GaN High Electron Mobility Transistors from X-Band Operation (2011) (1)
- Effect of Gamma Irradiation on DC Performance of Circular-Shaped AlGaN/GaN High Electron Mobility Transistors (2014) (1)
- High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors (2020) (1)
- Deep etch-induced damage during ion-assisted chemical etching of sputtered indium–zinc–oxide films in Ar/CH4/H2 plasmas (2008) (1)
- Progress and challenges of GaN-based microwave HEMTs, amplifiers and novel spin (2003) (1)
- Dopant incorporation in GaAs and AlGaAs grown by MOMBE for high speed devices (1992) (1)
- Effect of hydrogen on Ca and Mg acceptors in GaN (1996) (1)
- Ga+-focused ion beam damage in n-type Ga2O3 (2022) (1)
- Surface morphology and removal rates for dry- and wet-etched novel resonator materials: Part I: La3Ga5.5Ta0.5O14 (2000) (1)
- Passivation of Deep Levels by Hydrogen (1992) (1)
- Threshold Ion Energies and Cleaning of Etch Residues During Inductively Coupled Etching of NiO/Ga2O3 in BCl3 (2022) (1)
- Extended X-ray Absorption Fine Structure Studies by Soft X-ray Fluorescence Detection (1987) (1)
- Gadolinium Oxide Gate Dielectrics for GaN MOSFETs (2001) (1)
- Properties of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition (2005) (1)
- Ion implantation processing of GaN epitaxial layers (1996) (1)
- Anomalous hall effect in wide bandgap diluted magnetic semiconductors co-doped with non-magnetic impurities (2004) (1)
- Annealing temperature dependence of contact resistance and stability for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO (2003) (1)
- Spin-on-glass as an Encapsulant for Annealing Si-Implanted GaAs (1990) (1)
- H trapping at the metastable cation vacancy in α-Ga2O3 and α-Al2O3 (2022) (1)
- Effect of Proton Irradiation on DC Performance and Reliability of Circular-Shaped AlGaN/GaN High Electron Mobility Transistors (2014) (1)
- Ion Beam Processing of InGaAsP (1993) (1)
- Ultra-Thin p+ Layers in GaAs (1986) (1)
- High Temperature Photoluminescence and Photoluminescence Excitation Spectroscopy of Er Doped Gallium Nitride (1997) (1)
- GaAs HEMT Reliability and Degradation Mechanisms after Long Term Stress Testing (2009) (1)
- Ion implantation for creating room temperature ferromagnetism in wide bandgap semiconductors (2003) (1)
- Effects of fluorine incorporation into β-Ga 2 O 3 (2018) (1)
- Ir Diffusion Barriers in Ni/Au Ohmic Contacts to p-Type CuCrO2 (2008) (1)
- Reactive Ion Etching of In-Based III-V Semiconductors -Comparison of Cl and C 2 H 6 Chemistries (1989) (1)
- Radiation and process-induced damage in Ga2O3 (2018) (1)
- A surface modification study of InGaP etched with an electron cyclotron resonance source at variable microwave powers (1996) (1)
- Fast Detection of Perkinsus Marinus, a Prevalent Pathogen of Oysters and Clams from Sea Waters (2009) (1)
- Luminescence polarization and spin-relaxation in GaAs grown on Si and on InP (1995) (1)
- Cl{sub 2}-based dry etching of the AlGaInN system in inductively coupled plasmas (1997) (1)
- Frequency Response and Devices Performance of the Indium Zinc Oxide Thin Film Transistors (2007) (1)
- Development of Thin Film and Nanorod ZnO-Based LEDs and Sensors (2006) (1)
- Laser assisted doping of n-GaAs from Sn evaporated films (1981) (1)
- Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications (2000) (1)
- Damage investigation in AlGaAs and InGaP exposed to high ion density Ar and SF6 plasmas (1997) (1)
- Comparison of Cl2 and F2 based chemistries for the inductively coupled plasma etching of NiMnSb thin films (1999) (1)
- Dry etching of InGaP in magnetron enhanced BCl3 plasmas (1997) (1)
- The Use of Amorphous SiO and SiO2 to Passivate AuGe Based Contact for GaAs Integrated Circuits (1999) (1)
- Spin orientation by optical pumping in GaAs grown on InP : comparison with GaAs/Si (1991) (1)
- Neutron Irradiation of AlGaN Polarization Doped Field Effect Transistors (2020) (1)
- Effect of surface treatments on electrical properties of β-Ga 2 O 3 (2018) (1)
- a-plane GaN hydride vapor phase epitaxy on a-plane GaN templates with and without use of TiN intermediate layers (2010) (1)
- Hydrogen Passivation of Interfacial Defects in MOCVD grown GaAs/InP (1989) (1)
- Elevated Temperature Reactive Ion Etching of GaAs and AIGaAs in C2H6 / H2 (1989) (1)
- P- and N-type implantation doping of GaN with Ca and O (1996) (1)
- DRY ETCHING OF SIC (2006) (1)
- Introduction Of Ions Into Wide Band Gap Semiconductors (1997) (1)
- In Situ Transmission Electron Microscopy Observations of Forward Bias Degradation of Vertical Geometry β-Ga2O3 Rectifiers (2020) (1)
- Properties and Effects of Hydrogen in GaN (1999) (1)
- Hydrogen Detection Using Chemical Vapor Deposited Graphene Coated with Platinum (2011) (1)
- Thermally Stable Novel Metal Contacts on Bulk, Single-Crystal n-type ZnO (2007) (1)
- Electrical, photoelectrical, and luminescent properties of doped p-type GaN superlattices (2007) (1)
- Devices for High-Frequency Applications (2001) (1)
- Chapter 10 - The Properties of Hydrogen in GaN and Related Alloys (1999) (1)
- Erratum: “Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes” [Appl. Phys. Lett. 94, 212108 (2009)] (2009) (1)
- DX‐like centers in Al0.5Ga0.5As0.05Sb0.95 (1992) (1)
- Unusual effects of hydrogen on electronic and lattice properties of GaNP alloys (2006) (1)
- AlGaN/GaN High Electron Mobility Transistors on Si/SiO 2 /poly-SiC Substrates (2006) (1)
- Depth-Resolved Cathodoluminescence Spectroscopy Characterization of RF Stressed AlGaN/GaN High Electron Mobility Transistors (2013) (1)
- High speed InGaP emitter HBTs fabricated with ECR dry etch technique (1994) (1)
- Spectroscopy of Proton Implanted GaN (1999) (1)
- Review—Opportunities for Rapid, Sensitive Detection of Troponin and Cerebral Spinal Fluid Using Semiconductor Sensors (2019) (1)
- Device Processing for GaN High Power Electronics (2000) (1)
- Lattice-Matched Gaas/Ca 0.45 Sr 0.55 F 2 /Ge(100) Heterostrucuures Grown By Molecular Beam Epitaxy (1987) (1)
- Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of an InGaAlP Compound Semiconductor System (1998) (1)
- Local Structure of DX-Like Centers from Extended X-Ray Absorption Fine Structure (1991) (1)
- Design and implementation of floating field ring edge termination on vertical geometry β-Ga2O3 rectifiers (2020) (1)
- Inductively Coupled Plasma Etching of III-Nitrides in Cl(2)/Xe,Cl(2)/Ar and Cl(2)/He (1999) (1)
- Design of Transparent Indium Tin Oxide-Based Interdigitated Fingers for Metal Semiconductor Metal Photodetector (2007) (1)
- Dry etching of InGaAlP alloys in Cl2/Ar high ion density plasmas (1996) (1)
- RF performance of GaN-based npn bipolar transistors (2003) (1)
- Magnetic Field Dependence of Defect State in GaAs (1981) (1)
- AlGaN/GaN Sensors for Direct Monitoring of Nerve Cell Response to Inhibitors (2016) (1)
- New optical sensor for real-time in-situ end point monitoring during dry etching of III-V ternary multistack layers (1999) (1)
- Parasitic p–n junctions formed at V-pit defects in p-GaN (2021) (1)
- Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface (2003) (1)
- Photoelectrochemical Etching of In x Ga l-x N (1998) (1)
- Fabrication and magneto-transport and SQUID measurements of submicron spin-valve structures (1999) (1)
- Advances in Hydrogen Gas Sensor Technology and Implementation in Wireless Sensor Networks (2016) (1)
- Reduction of dry etch damage to GaAs using pulse-time modulated plasmas (2007) (1)
- Spintronics in III-Nitride Based Mate (2010) (1)
- Progress in Novel Oxides for Gate Dielectrics and Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors (2003) (1)
- Electron cyclotron resonance plasma etching of InP and related materials in BCl3 (1996) (1)
- Al x Ga 1-x as Growth by OMVPE Using Trimethylamine Alane (1990) (1)
- Photoluminescence of ZnO Nanowires with Eu Diffusion Process (2008) (1)
- (Invited) Comparison of High Voltage, Vertical Geometry Ga2O3 Rectifiers with GaN and SiC (2019) (1)
- Emission Mechanisms of LEDs and LDs (2000) (1)
- Hydrogen-Selective Sensing at Room Temperature with Pt-Coated ZnO Nanorods (2005) (1)
- Interhalogen Plasma Chemistries for the Etching of NiMnSb (1999) (1)
- Selective dry etching of III-nitrides in inductively coupled plasmas (2001) (1)
- Flexible Electronics Based on InGaZnO Transparent Thin Film Transistors (2012) (1)
- InP-based single heterojunction bipolar transistors with improved breakdown characteristics (1994) (1)
- High Performacne InGaZnO4-based Thin film Transistors Fabricated at Low Temperature (2008) (1)
- Hydrogen in GaN-Experiments (1998) (1)
- Low Temperature SiN x as a Sacrificial Layer in Novel Device Fabrication (1993) (1)
- Radiation e ff ects in GaN materials and devices (2012) (1)
- Degradation of Hydrogen-Passivated p-Type Layers in GaAs by Minority Carrier Injection and Reverse Bias Annealing (1990) (1)
- The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors (2012) (1)
- Effects of base structure on performance of GaN-based heterojunction bipolar transistors (2003) (1)
- Photoluminescence Detection of the Shallow Impurity Neutralization in GaAs (1986) (1)
- Hydrogenation of InN and InGaN (1995) (1)
- Photoluminescence Enhancement and Morphological Properties of Carbon Codoped GaN:Er (1999) (1)
- Effect of argon annealing of phosphorus-doped ZnO and (Zn,Mg)O thin-films grown pulsed laser deposition (2006) (1)
- InAlAs/InGaAs MHEMT degradation during DC and thermal stressing (2010) (1)
- Changes induced in electrical properties and deep level spectra of p-AlGaN films by treatment in hydrogen plasma and by proton implantation (2005) (1)
- Anomalous Hall effect in sputter-deposited CoxTi1−xO2–δ films (2008) (1)
- In-situ chemical surface treatments for the removal of AlN/SiC interfacial contamination (2003) (1)
- Thermal Stability of Ti/Pt/Au Non-Alloyed Ohmic Contacts on InN (1994) (1)
- Semiconductor Superlattices: Order and Disorder (1987) (1)
- Large-area MoS 2-MoOx heterojunction thin-film photodetectors with wide spectral range and enhanced photoresponse (2019) (1)
- Microscopic Properties of Hydrogen Passivated Shallow Impurities in Semiconductors (1991) (1)
- (Invited) Total Dose Effects and Single Event Upsets During Radiation Damage of GaN and SiC (2021) (1)
- Dry etching of GaAs in asymmetric bipolar pulsed dc BCl3 plasmas (2011) (1)
- Comparison of Surface Passivation Layers on InGaN/GaN MQW LEDs (2005) (1)
- Thermal Simulation of 193 nm UV-Laser Lift-Off AlGaN/GaN High Electron Mobility Transistors Mounted on AlN Substrates (2011) (1)
- Improved Hydrogen Sensing Performance of AlGaN/GaN Based Sensor with Platinum Nanonetworks (2013) (1)
- Thermal Stability of Nitride-Based Diffusion Barriers for Ohmic Contacts to n-GaN (2007) (1)
- Metal-oxide Semiconductor Field-effect Transistors using Single ZnO Nanowire (2004) (1)
- Preface—JSS Focus Issue on Gallium Oxide Based Materials and Devices (2019) (1)
- Deep traps and persistent photocapacitance in β-(Al0.14 Ga0.86)2O3/Ga2O3 heterojunctions (2019) (1)
- Investigation of emitter size effect in InP/InGaAsSb/InGaAs double heterojunction bipolar transistors (2012) (1)
- A Reconfigurable, Pulse-shaping Potentiometric Readout System for Bio-Sensing Transistors (2019) (1)
- Effects of High Energy Proton Irradiation on DC Performance of GaAs Metal-Semiconductor Field Effect Transistors (2002) (1)
- MOCVD-grown HEMTs on Al2O3 substrates (2002) (1)
- Ion implantation and annealing studies in III-V nitrides (1996) (1)
- Group-III Nitride ETCH Selectivity IN BCl /Cl ICP Plasmas (1999) (1)
- Effect of Oxygen Co-Doping on the Electronic and Magnetic Properties of Ga ( 1 − x ) Mn x N (2005) (1)
- Low‐temperature rapid thermal low pressure metalorganic chemical vapor deposition of Zn‐doped InP layers using tertiarybutylphosphine (1993) (1)
- GaN High Electron Mobility Transistor Degradation: Effect of RF Stress. (2013) (1)
- Insulator/GaN Heterostructures of Low Interfacial Density of States (2000) (1)
- Growth Induced Alignment Of The First Neighbor Shell Of C As In Al x Ga 1−x As (1996) (1)
- 4.02 – Ion Implantation in Group III Nitrides (2011) (1)
- Low damage, highly anisotropic dry etching of SiC (1998) (1)
- Ion damage and annealing of epitaxial gallium nitride and comparison with GaAs/AlGaAs materials (1995) (1)
- Utilization of Optical Emission Spectroscopy for End-Point Detection during AlGaAs/GaAs and InGaP/GaAs Etching in BCl3 / N 2 Inductively Coupled Plasmas (2001) (1)
- Simulations of InGaN-base heterojunction bipolar transistors (2003) (1)
- Material and device properties of 3′ diameter GaAs-on-Si with buried P-type layers (1989) (1)
- Plasma etching of NiFeCo, NiMnSb and CoFeB-based multilayers (1999) (1)
- High Temperature Surface Degradation of III-V Nitrides (1996) (1)
- Processing and Device Performance of GaN Power Rectifiers (1999) (1)
- Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitaxy (1998) (1)
- [REGULAR PAPERS] High Dose 60Co r-Ray Irradiation of W/GaN Schottky Diodes (2004) (1)
- GaN HEMT Degradation: Effect of RF Stress (2012) (1)
- Strain measurement in 6H-SiC under external stress (2006) (1)
- Formation of Ohmic Contacts to InP by Means of Rapid Thermal Low Pressure (Metalorganic) Chemical Vapor Deposition (RT-LPMOCVD) Technique (1991) (1)
- Thermal Stability of Au Schottky Diodes on GaAs Deposited at Either 77 or 300 K (2006) (1)
- Hydrogenation effects on AlGaAs/GaAs heterojunction bipolar transistors (2001) (1)
- AlGaN/GaN High Electron Mobility Transistors integrated into Wireless Detection System for Glucose and pH in Exhaled Breath Condensate (2009) (1)
- Ion Milling and Reactive Ion Etching of III-V Nitrides (1994) (1)
- Microscopic Properties of Hydrogen-Related Complexes in Silicon from Vibrational Spectroscopy (1992) (1)
- Improved Organic Light Emitting Diodes Using Cryogenic LiF/Al Deposition (2012) (1)
- 1 GeV proton damage in β-Ga2O3 (2021) (1)
- Determination of AlGaN/GaN HEMT Reliability Using Optical Pumping as a Characterization Method (2012) (1)
- Dry etching of III-V nitrides (1995) (1)
- Ion Implant Activation and Redistribution in Al x Ga 1–x As (1989) (1)
- Opportunities and Challenges in MOCVD of βGa2O3 for Power Electronic Devices (2019) (1)
- AlGaN/GaN High electron mobility transistor grown and fabricated on ZrTi metallic alloy buffer layers (2017) (1)
- Proton irradiation effects on Sb-based heterojunction bipolar transistors (2009) (1)
- Selective regrowth of III–V epitaxial layers by low pressure organometallic vapor phase epitaxy using CCl4 (1993) (1)
- High sensitivity CIP2A detection for oral cancer using a rapid transistor-based biosensor module. (2023) (1)
- Degradation mechanisms in 3-5 compound semiconductor devices and structures (1990) (1)
- Comparison of E-beam and Sputter-Deposited ITO Films for 1.55 um Metal-Semiconductor-Metal Photo-Detector Applications (2007) (1)
- Electrical and Optical Properties of Vanadium in Omvpe-Grown GaAs (1989) (1)
- Summary Abstract: Molecular‐beam epitaxial growth of lattice‐matched GaAs/(Ca, Sr)F2/Ge(100) heterostructures (1988) (1)
- Implant Isolation Mechanisms in GaAs, AlGaAs, InP and InGaAs (1988) (1)
- Growth and characterization of α-Ga2O3 on sapphire and nanocrystalline β-Ga2O3 on diamond substrates by halide vapor phase epitaxy (2022) (1)
- Acceptor Delta-Doping for Schottky Barrier Enhancement on n -Type GaAs (1990) (1)
- Device Series Resistance Calculations for Vertical Cavity Surface-Emitting Lasers (2001) (1)
- Hydrogen centers as a probe of VGa(2) defects in β-Ga2O3 (2023) (1)
- Electron Cyclotron Resonance Chemical Vapor Deposited Silicon Nitride for T‐Gate Passivation (1999) (1)
- Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers (2003) (1)
- Rapid Thermal Processing of Implanted GaN Up to 1500°C (1998) (1)
- Photoluminescence from Gd-implanted AlN and GaN Epilayers (2006) (1)
- HVPE-GROWN AlGaN/GaN HEMTs (2003) (1)
- The Incorporation and Behavior of Oxygen in AlGaAs Grown by Mombe Using Trimethylamine Alane (1990) (1)
- Erratum: “Measurement of SiO2/InZnGaO4 heterojunction band offsets by x-ray photoelectron spectroscopy” [Appl. Phys. Lett. 98, 242110 (2011)] (2011) (1)
- Highly Reliable WGe Ohmic Contact to GaAs-AlGaAs HBTs (1992) (1)
- Effect of N 2 Plasma Treatments on Dry Etch Damage in n- and p-type GaN (2000) (1)
- Ferromagnetic AlGaCrP Films by Ion Implantation (2004) (1)
- Hydrogenation and Defect Creation in GaAs-Based Devices During High Density Plasma Processing (1998) (1)
- Preface—JSS Focus Issue on Gallium Oxide Based Materials and Devices II (2020) (1)
- The structure and thermal stability of tungsten‐based contact metallizations to n‐GaN (1998) (1)
- High temperature stable WSi/sub x/ ohmic contacts on GaN (1998) (1)
- Assessment of the (010) β-Ga2O3 surface and substrate specification (2021) (1)
- Dry etch, integrated processing for micro-and opto-electronics (1994) (1)
- Electrical and optical properties of Fe doped AIGaN grown by molecular beam epitaxy (2010) (0)
- Comparison of ICl and IBr for Dry Etching of III-Nitrides (1996) (0)
- Effect on 4H-SiC Schottky Rectifiers of Ar Discharges Generated in A Planar Inductively Coupled Plasma Source (2003) (0)
- Optical and Electrical Studies of Gamma-Irradiated AlGaN/GaN High Electron Mobility Transistors (2016) (0)
- Cu-plated through-wafer vias for AlGaN∕GaN high electron mobility transistors on Si (2009) (0)
- TEM investigations of Si ion-implanted GaN (1998) (0)
- Band alignment of various dielectrics on Ga2O3, (Al xGa1−x)2O3, and (In xGa1−x)2O3 (2020) (0)
- Optimization of Samarium Oxide Deposition on Gallium Arsenide (2008) (0)
- Dilute Magnetic GaN, SiC and Related Semiconductors (2004) (0)
- Dry Etching of SrS Thin Films (1998) (0)
- Optical Characterization of ZnCdO Alloys Grown by Molecular-Beam Epitaxy (2006) (0)
- Carbon‐doped impurity induced layer disorder 0.98 μm lasers (1994) (0)
- GaN and ZnO-Based Sensors for Gas, Nuclear Materials and Chemical Detection (2007) (0)
- Surface Passivation of AlGaN terminated and GaN Terminated HEMT Structures Studied by XPS (2002) (0)
- Surface state characterization methods for SiO2 on 4H-SiC (2003) (0)
- Low Temperature Hydrothermal Growth of ZnO Nanorods and its Applications (2009) (0)
- Plasma Etching of InP and Related Materials in Electron Cyclotron Resonance CH 4 /H 2 /Ar Discharges (1990) (0)
- Fabrication and Characterization of Self-Aligned InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors (2011) (0)
- High temperature Ohmic contacts to p-type GaN for use in light emitting applications (2008) (0)
- Transient Magneto-optical Spectroscopy of Spin-LED Structures (2006) (0)
- Use of sub-bandgap optical pumping to identify defects in AlGaN/GaN high electron mobility transistors (Conference Presentation) (2017) (0)
- Recovery in dc performance of off-state step-stressed AlGaN/GaN high electron mobility transistor with thermal annealing (2016) (0)
- Transient capacitance measurements of deep level defects introduced in γ-ray compensated germanium by long-term annealing at room temperature (1980) (0)
- Electrical and structural properties of AIN/GaN and AIGaN/GaN heterojunctions (2008) (0)
- MgZnO/ZnO heterostructures for UV light emitters and spintronic applications: Material growth and device design (invited talk) (2004) (0)
- RF characteristics of GaAs/InGaAsN/GaAs P-n-P double heterojunction bipolar transistors (2000) (0)
- Effects of N incorporation on the electronic structure of GaNP : Origin of the 2.87 eV optical transition (2005) (0)
- Chloride Ion Detection by InN Gated AlGaN/GaN High Electron Mobility Transistors (2009) (0)
- Optical and Electrical Properties of AlGaN Films Implanted with Mn , Co , or (0)
- High Temperature Defect-Free Rapid Thermal Annealing of III-V Substrates in Metallorganic Controlled Ambient (1992) (0)
- Wide Bandgap Semiconductor Nanowires for Sensing Applications (2007) (0)
- High Density Planar Inductively Coupled Plasma Etching of GaAs in BCl$_3$-based Chemistries (2003) (0)
- GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors (2013) (0)
- High-Density Plasma Etching of Group-III Nitride Films for Device Application (1999) (0)
- Acceptor Delta-Doping in GaAs (1989) (0)
- 4.7 Kv Reverse Breakdown Voltage Ultra-Thin Double-Layered NiO/β-Ga2O3 p-n Junction Rectifiers (2022) (0)
- Comparison of Novel Chlorine, Bromine and Iodine Plasma Chemistries for Anisotropic Trench Etching In GaN, InN and Ain (1998) (0)
- Radiation Damage in Emerging Ga2O3 Devices for Solar-Blind UV Detection and High Power Electronics (2018) (0)
- Hydrogen in Crystalline Semiconductors: III-V Compounds (1996) (0)
- Role of Electric Field, Defects and Radiation Damage in Determining Reliability in AlGaN/GaN High Electron Mobility Transistors (2015) (0)
- Investigation of electrical and optical properties of ZnO thin films grown with O 2 /O (2008) (0)
- Diffusion of implanted Ge and Sn in β-Ga 2 O 3 (2019) (0)
- High microwave power ECR etching of III-V semiconductors in CH{sub 4}/H{sub 2}/Ar (1996) (0)
- P-type Doping and Electroluminescence in ZnO Thin Films (2007) (0)
- Ion Beam Induced Intermixing of Wsi 0.45 on GaAs (1988) (0)
- In-Based Ohmic Contacts to the Base Layer of GaAs-AlGaAs Heterojunction Bipolar Transistors (1990) (0)
- 50 Symposia and Counting-A Personal View of Highlights from SOTAPOCS (2009) (0)
- AFM Analysis of ECR Dry-Etched Ingap, Alinp and Algap (1995) (0)
- Growth of magnesium oxide and scandium oxide on GaN for use as gate and field passivation dielectrics (2003) (0)
- Electric Field Driven Degradation of AlGaN/GaN High Electron Mobility Transistors during Off-State Stress (2011) (0)
- Radiation Testing of AlInAs/lnGaAs and GaAs/AlGaAs HBTs (1991) (0)
- Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN (1996) (0)
- Ion-beam-induced intermixing of WSi0.45 and GaAs (1989) (0)
- High rate ECR etching of III-V nitride materials (1994) (0)
- Proton Irradiation Effects on Scandium Oxide/Gallium Nitride MOS Diodes (2001) (0)
- Doping and isolation of GaN, InGaN and InAlN using ion implantation (1995) (0)
- Wet and Dry Etching Characteristics of Electron Beam Deposited SiO and SiO 2 (1999) (0)
- Magnetism in Fe-implanted ZnO (2004) (0)
- Hydrogen, and Semiconductor Surfaces and Surface Layers (1992) (0)
- Novel compound semiconductor devices based on III-V nitrides (1995) (0)
- Erratum: ‘‘Tantalum nitride films as resistors on chemical vapor deposited diamond substrates’’ [J. Appl. Phys. 73, 5208 (1993)] (1994) (0)
- PROCESSING CHALLENGES FOR GaN-BASED PHOTONIC AND ELECTRONIC id 967 ~-223 I : c 5 Wb -9 7-aa 36 c 1 DEVICES (2008) (0)
- Ion implant doping and isolation of GaN and related materials (2002) (0)
- Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures (2001) (0)
- Room Temperature Deposited Enhancement Mode and Depletion Mode Indium Zinc Oxide Thin Film Transistors (2008) (0)
- Dry and wet etch processes for NiMnSb, LaCaMnO 3 and related materials (1997) (0)
- MgCaO Dry Etching on GaN (2005) (0)
- Simulation of ZnO-based UV and Visible Light-Emitting Diode Structures (2005) (0)
- Sensing gas molecules using graphitic nanoribbon films and networks (2011) (0)
- High temperature GaN based Schottky diode gas sensors (2003) (0)
- Hydrogen Sensitive Schottky Diodes on Free-standing GaN (2006) (0)
- Rapid thermal low-pressure metalorganic chemical vapour deposition of local diffused W(Zn) contacts (1993) (0)
- Synthesis and characterization of P-doped ZnO and (Zn,Mg)O thin films for optoelectronic applications (2005) (0)
- Dry etching of GaAs-based semiconductors in high-density planar inductively coupled BCl/sub 3/ plasmas (2003) (0)
- AlN grown by metalorganic molecular beam epitaxy (1994) (0)
- A Novel Backside Gate Structure to Improve Device Performance (2015) (0)
- Growth of MgCaO on GaN (2003) (0)
- Selective dry etching of (Sc2O3)x(Ga2O3)1−x gate dielectrics and surface passivation films on GaN (2006) (0)
- Fabrication of novel III-N and III-V modulator structures by ECR plasma etching (1995) (0)
- Oriented Carbon Pair Defects Stabilized by Hydrogen in as-Grown GaAs Epitaxial Layers (1993) (0)
- Electron Bunches in the Addition Spectrum of Quantum Dots (1997) (0)
- Spin injection and spin detection in semiconductor quantum structures (2008) (0)
- Comparison of Dislane and Tetraethyltin as Gaseous Dopants for Growth of n-GaAs and O-AlGaAs by MOMBE (1991) (0)
- C New Applications for Wide-Bandgap Semiconductors Chairs (2003) (0)
- Electro-Thermal Analysis and Edge Termination Techniques of High Current β-Ga2 O3 Schottky Rectifiers (2019) (0)
- Use of Selective Area Defect Creation for Isolation of III-V Multilayer Structures (1992) (0)
- Resonance Studies Pertinent to Hydrogen in Semiconductors (1992) (0)
- The Evolution of Wide Bandgap Semiconductors at SOTAPOCS (2009) (0)
- Optical Emission End-Point Detection for Via Hole Etching in InP and GaAs Power Device Structures (1993) (0)
- Inductively Coupled Plasma Etching of InP with Cl2/H2/Ar Plasma. (2012) (0)
- Pressure Sensing with PVDF Gated AlGaN/GaN High Electron Mobility Transistor (2009) (0)
- HI/H 2 ECR Plasma Etching of III-V Semiconductors (1992) (0)
- A process for patterning of tungsten layers (1992) (0)
- Surface morphology and removal rates for dry- and wet-etched novel resonator materials (2000) (0)
- Gamma radiation on gallium nitride high electron mobility transistors at ON, OFF, and prestressed conditions (2022) (0)
- Effect of Biased Field Rings to Improve Charge Removal after Heavy-Ion Strikes in Vertical Geometry β-Ga2O3 Rectifiers (2023) (0)
- Communication—Electron-Beam Stimulated Release of Dislocations from Pinning Sites in GaN (2022) (0)
- Corrigendum to “Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells” [J. Alloy. Compd. 868 (2021) 159211] (2021) (0)
- Defects in N, O and N, Zn implanted ZnO single crystals. (2012) (0)
- Thermal Stability of Transparent ITO/n-Ga2O3/n+-Ga2O3/ ITO Rectifiers (2021) (0)
- Development of GaN and InGaN Gratings by Dry Etching (1997) (0)
- Hydrogen Passivation of Shallow and Deep Centers in GaSb (1992) (0)
- Effect of Low Temperature Growth on Impurity and Defect Incorporation in AlGaAs Grown by Mombe (1992) (0)
- High volume UV LED performance testing. (2022) (0)
- 7.5 kV, 6.2 GW cm−2 NiO/β-Ga2O3 vertical rectifiers with on–off ratio greater than 1013 (2023) (0)
- DC and dynamic switching characteristics of field-plated vertical geometry β-Ga2O3 rectifiers (2019) (0)
- Prevalence of Hydrogen Incorporation and Device Applications (1992) (0)
- Selective Wet and Dry Etching of NiO over β-Ga2O3 (2022) (0)
- Sidewall Electrical Damage in β-Ga2O3 Rectifiers Exposed to Ga+ Focused Ion Beams (2023) (0)
- Effect of Downstream Plasma Exposure on Schottky Diodes Fabricated on β-Ga2O3 (2021) (0)
- Type II band alignment of NiO/α-Ga2O3 for annealing temperatures up to 600 °C (2022) (0)
- Surface conversion effects in plasma-damaged p-GaN (1999) (0)
- Applications of Graphene in Semiconductor Devices as Transparent Contact Layers, Diffusion Barriers, and Thermal Management Layers (2016) (0)
- Properties of H, O and C in GaN (1996) (0)
- M R S Internet Journal Research Nitride Semiconductor New plasma chemistries for etching GaN and InN: BI 3 and BBr 3 (1999) (0)
- Temperature Dependence of Etch Rate and Residual Damage in Reactively Ion Etched GaAs and AlGaAs (1988) (0)
- ECR etching of GaP, GaAs, InP, and InGaAs in Cl{sub 2}/Ar, Cl{sub 2}/N{sub 2}, BCl{sub 3}/Ar, and BCl{sub 3}/N{sub 2} (1996) (0)
- Mechanism for Long Photocurrent Time Constants in α-Ga2O3 UV Photodetectors (2023) (0)
- Electronic and optical properties of 3d-transition metals in β-Ga2O3 (2023) (0)
- Quick takes and random musings (2007) (0)
- Comparison of the effects of deuterated SiNX films on GaN and GaAs rectifiers (2002) (0)
- The role of ion characteristics in determining the structural and electrical quality of InN grown by metalorganic molecular beam epitaxy (1997) (0)
- We all deserve a raise (2007) (0)
- Analytical Specificity and Microbial Interference Study of a 30-Second Quantitative SARS-CoV-2 Detection Biosensor System (2022) (0)
- Dynamic Switching of 1.9 A /1.76 kV Forward Current NiO/β-Ga2O3 Rectifiers (2022) (0)
- Effects of N2 or Ar plasma exposure on GaAs/AlGaAs heterojunction bipolar transistors (2001) (0)
- Localized strain relaxation effect on gamma irradiated AlGaN/GaN high electron mobility transistors (2022) (0)
- Comparison of Multipolar Resonant-Cavity and Magnetic Mirror Microwave ECR Sources for dry Etching of III-V Semiconductors (1994) (0)
- Ultra-high implant activation efficiency in GaN using novel high temperature RTP system (1998) (0)
- Band Alignment of Al2O3 on α-(AlxGa1-x)2O3 (2022) (0)
- Ion Energy Dependence of Dry Etch Damage Depth in Ga2o3 Schottky Rectifiers (2023) (0)
- Electron Beam Induced Current Study of Photocurrent Gain in κ-Ga2O3 Schottky Diodes (2023) (0)
- A new probe to perform Magneto-Optical Kerr measurements on thin films and multilayers. (1998) (0)
- NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV (2023) (0)
- Novel in-situ Ion Bombardment Process for A Thermally Stable (> 800 °C) Plasma Deposited Dielectric (1999) (0)
- Photoreflectance Characterization and Control of Defects in Gan by Etching with an Inductively Coupled Plasma (2002) (0)
- Transport and trap states in proton irradiated ultra-thick κ-Ga2O3 (2023) (0)
- Heuristic Detection of the Most Vulnerable Regions in Electronic Devices for Radiation Survivability (2022) (0)
- Deposition of sputtered NiO as a p-type layer for heterojunction diodes with Ga2O3 (2023) (0)
- The approval matrix for academia (2007) (0)
- Deep Ultra-Violet (DUV) Light Emitting Diodes (2003) (0)
- (Invited) Micromechanical Aspects of GaN Hemt Performance and Reliability (2022) (0)
- Gap solitons in buried Bragg grating AlGaAs waveguides (1991) (0)
- GaAs(C)/InAs superlattices grown by MOMBE (1992) (0)
- Comparison of surface passivation on films for reduction of current collapse in AlGaN/GaN high electron mobility transistors (2002) (0)
- Band alignment of sputtered and atomic layer deposited SiO2 and Al2O3 on ScAlN (2022) (0)
- Synthesis and characterization of (Zn,Mg)O:P/ZnO heterostructures (2006) (0)
- 30-Seconds Sars-Cov-2 Human Sample Diagnosis and Analytical Specificity Analysis Using Disposable Strips on a Metal-Oxide-Semiconductor Field-Effect Transistor Platform (2022) (0)
- InP/InGaAs optical microstructures (1991) (0)
- AlGaN/GaN high-electron mobility transistor-based sensors for environmental and bio-applications (2010) (0)
- Alternative Group V Sources for Metal Organic Molecular Beam Epitaxy (1992) (0)
- Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers (2023) (0)
- On the possible nature of deep centers in Ga2O3 (2023) (0)
- Tuning electrical properties in Ga2O3 polymorphs induced with ion beams (2023) (0)
- Retraction notice to “Recent progress in processing and properties of ZnO” [Prog. Mater. Sci. 50(3) (2004) 293–340] (2021) (0)
- Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation (2015) (0)
- Evaluation of dry stored disposable sensor strip on rapid SARS-CoV-2 detection platform (2023) (0)
- Type-II band alignment for atomic layer deposited HfSiO4 on α-Ga2O3 (2023) (0)
- Superparamagnetism in Co ion‐implanted epitaxial anatase TiO2 thin films (2004) (0)
- Carbon Doped Al/sub x/Ga/sub 1-x/As by OMVPE: Doping Properties, Oxygen and Hydrogen Incorporation, and Device Applications (1992) (0)
- Properties of post‐annealed ZnO films grown with O3 (2008) (0)
- Saturation of cathodoluminescence from single GaAs/AlGaAs quantum wires (1988) (0)
- Low voltage X-band InGaP/GaAs power heterojunction bipolar transistor (1994) (0)
- Dry etching of InGaP and AlInP in CH4/H2/Ar (1996) (0)
- Elevated Temperature Dependence of dc Characteristics of 2-D Flake Ga2O3 Transistors (2022) (0)
- Simple fabrication of nanoporous films on ZnO for enhanced light emission (2007) (0)
- Electrical and Recombination Properties of Polar Orthorhombic κ-Ga2O3 Films Prepared by Halide Vapor Phase Epitaxy (2023) (0)
- Heteroepitaxial Growth of Ga2O3 Thin Films of Various Phase Composition by Oxidation of Ga in Hydrogen-Oxygen Plasmas (2021) (0)
- Effects of wet and dry etching and sulphide passivation on surface recombination velocities of InGaP p-n junctions (1994) (0)
- Inductively Coupled Plasma Etching of Benzocyclobutene with SF6 Chemistry. (2012) (0)
- Single Crystal Growth of Gallium Nitride Substrates Using an High Pressure High Temperature Process (2000) (0)
- Growth and Doping of AlAs by Mombe (1994) (0)
- Hydrothermally Grown ZnO Nanorods as Cell Adhesion Control Coating for Implant Devices (2009) (0)
- Optimization of GaMnN growth conditions for novel spintronic applications (2003) (0)
- Material and Device Properties of 3” Diameter GaAs-on-Si with Buried P-type Layers (1988) (0)
- Investigation of Traps in AlGaN/GaN HEMTs by Sub-Bandgap Optical Pumping under DC and Gate-Lag Measurement (2014) (0)
- GaN-based Electronics (2014) (0)
- Cl2-Based Dry Etching of Doped Manganate Perovskites: PrBaCaMnO3 and LaSrMnO3. (1999) (0)
- Processing of compound semiconductors (2001) (0)
- Prospects of Potential Semiconductor Spin Detectors (2007) (0)
- High density plasma damage induced in n-GaN Schottky diodes using Cl{sub 2}/Ar discharges (1999) (0)
- Susceptor and Proximity Rapid Thermal Annealing of InP (1990) (0)
- Efficiency of hydrogen passivation of nitrogen in GaAsN and GaNP alloys (2007) (0)
- Growth of GaAs and AlGaAs by MOMBE Using Phenylarsine (1991) (0)
- Operation Up to 600K of Vertical β-Ga2O3 Schottky Rectifier With 754V Reverse Breakdown Voltage (2021) (0)
- Pt/Au and W/Pt/Au Schottky Contacts to Bulk n-ZnO. (2004) (0)
- (The Gordon E. Moore Medal for Outstanding Achievement in Solid State Science and Technology Award) Wide Bandgap Semiconductors for Electronics, Photonics, and Sensing Applications (2011) (0)
- Novel Tungsten Boride based High Thermal Stability Ohmic Contacts to n-GaN (2006) (0)
- Rapid Sars-Cov-2 Virus Detection Using Modular Transistor-Based Biosensor Platform with Disposable Test Strips (2021) (0)
- Transition Metal Doped ZnO (2010) (0)
- Simulation and Design of lnGaAsN-based Heterojunction Bipolar Transistors for Complementary Low-Power Applications (2000) (0)
- Wet and Dry Etching of LiGaO2 and LiAlO2. (1996) (0)
- Thermal Simulations of 3-D Integrated Multi-Chip Module with GaN Power Amplifier and Si Modulator (2006) (0)
- Characteristics of vinyl iodide microwave plasma etching of GaAs/AlGaAs and InP/InGaAs heterostructures (1993) (0)
- ZnO Thin Film and Nanowire Devices (2008) (0)
- Laser Lift-Off AlGaN/GaN High Electron Mobility Transistors (2011) (0)
- Stable Contacts at High Temperature for GaN using Boride-Metal Scheme. (2005) (0)
- a-Plane GaN for Hydrogen Sensing Applications (2010) (0)
- Plasma diagnosis and end-point detection with an optical emission spectroscopy during high density inductively coupled BCl/sub 3/ plasma etching (2003) (0)
- Properties of Ferromagnetic GaGdN (2006) (0)
- RBS analyses of the composition and structure of thin films synthesized using the pulsed laser deposition technique (2014) (0)
- (Invited) Effect of Temperature and 5 Mev Proton Irradiation Damage on Performance of b-Ga2O3 Photodetectors (2017) (0)
- Reliability Issues in AlGaN/GaN High Electron Mobility Transistors (2011) (0)
- 1 OPTICAL CHARACTERIZATION OF ERBIUM DOPED III-NITRIDES PREPARED BY METALORGANIC MOLECULAR BEAM EPITAXY (1999) (0)
- 1 Dry etching of thin-film InN, AIN and GaN I (1993) (0)
- Characteristics of III‐V Dry Etching in HBr‐Based Discharges. (1992) (0)
- Buried interconnect structure for symmetric SEEDS (2008) (0)
- Self-Aligned Process For Emitter- And Base- Regrowth GaN HBTs And BJTs (2000) (0)
- Erratum: “Novel In Situ Ion Bombardment Process for a Thermally Stable ( > 800 ° C ) Plasma Deposited Dielectric” [Electrochem. Solid‐State Lett., 2, 537 (1999)] (1999) (0)
- 905 nm Wavelength Laser as a Means for in situ End‐Point Detection of Dry Etching of AlxGa1‐xAs on GaAs. (2000) (0)
- Implant Doping and Isolation (1996) (0)
- Formation of Long Wavelength InP Laser MESAS (1993) (0)
- Hydrogen Diffusion and Passivation in InGaAIN Alloys (1995) (0)
- GaN power rectifiers and field-effect transistors on free-standing GaN substrates (2003) (0)
- Measurement of band offsets in Y2O3/InGaZnO4 heterojunctions. (2014) (0)
- High Density Inductively Coupled Plasma Etching of Zinc-Oxide(ZnO) and Indium-Zinc Oxide(IZO) (2007) (0)
- GROUP-III NITRIDE ETCH SELECTIVITY IN BCl 3/Cl2 ICP PLASMAS (1999) (0)
- Temperature Dependent Performance of GaN Schottky Diode Rectifiers (2000) (0)
- GaN-Based Devices for Reliable Operation at Very High Temperatures (2006) (0)
- Annealing of Proton and Alpha Particle Damage in Au-W/β-Ga2O3 Rectifiers (2019) (0)
- DRY ETCHING AND IMPLANTATION CHARACTERISTICS OF AL0.5GA0.5P (1994) (0)
- Detection of Cl- Ions with AlGaN/GaN High Electron Mobility Transistors (2009) (0)
- Plasma etching of NiFe/Cu and NiMnSb/Al2O3 multilayers for sub-micron pattern definition (1999) (0)
- Extended X-Ray Absorption Fine Structure Studies of Impurities in Semiconductors (1987) (0)
- Plasma etching of the Group-III nitrides (1996) (0)
- Characteristics of CO sensors made by polar and nonpolar ZnO nanowires gated AlGaN/GaN high electron mobility transistor (2011) (0)
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- The oxide/nitride interface: A study for gate dielectrics and field passivation (2003) (0)
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- A magnetic read, right? (2005) (0)
- Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on Gan by Plasma Assisted Gas Source Molecular Beam Epitaxy (2002) (0)
- High rate dry etching of Si in fluorine-based inductively coupled plasmas (2004) (0)
- Influence of PECVD deuterated SiNx on GaAs MESFETs and GaAs/AlGaAs HBTs (2002) (0)
- Effect of Electron Injection on Minority Carrier Transport Properties in Unintentionally Doped GaN (2020) (0)
- Development of plasma dielectric deposition method for increased pre-metal dielectric interfacial film stability (2002) (0)
- A Two-Electrode, Double-Pulsed Sensor Readout Circuit for Cardiac Troponin I Measurement (2020) (0)
- Hydrogen Passivation Of Er-Doped AIN (1997) (0)
- Magnetron Enhanced Reactive Ion Etching of Group-III Nitride Semiconductor Materials. (1996) (0)
- Dry Etching of GaAs, AlGaAs, and GaSb in Hydrochlorofluorocarbon Mixtures. (1991) (0)
- Iodine-Based dry Etching Chemistries for InP and Related Compounds (1992) (0)
- Dry Etching of GaAs in a Planar Inductively Coupled BCl 3 Plasma (2003) (0)
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