Steven P. DenBaars
#75,333
Most Influential Person Now
Steven P. DenBaars's AcademicInfluence.com Rankings
Steven P. DenBaarsengineering Degrees
Engineering
#1659
World Rank
#2397
Historical Rank
#608
USA Rank
Applied Physics
#204
World Rank
#213
Historical Rank
#58
USA Rank
Electrical Engineering
#322
World Rank
#364
Historical Rank
#123
USA Rank
Download Badge
Engineering
Steven P. DenBaars's Degrees
- PhD Electrical Engineering Stanford University
- Masters Electrical Engineering Stanford University
Why Is Steven P. DenBaars Influential?
(Suggest an Edit or Addition)According to Wikipedia, Steven P. DenBaars is an American material scientist, electrical engineer, and academic. He is a professor of Materials and Electrical and Computer Engineering, and the executive director of the Solid State Lighting and Energy Electronics Center at the University of California, Santa Barbara. He is also a Fellow of National Academy of Inventors , and was selected as a Member of National Academy of Engineering in 2012 for contributions to gallium nitride-based materials and devices for solid state lighting and displays.
Steven P. DenBaars's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Prospects for LED lighting (2009) (1521)
- Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces (1993) (1437)
- Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening (2004) (1264)
- Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors (2000) (957)
- Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films (1996) (784)
- Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements (1997) (643)
- Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors (2006) (624)
- “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells (1998) (622)
- Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire (2002) (454)
- Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures (1998) (425)
- High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap (2008) (418)
- STRUCTURAL ORIGIN OF V-DEFECTS AND CORRELATION WITH LOCALIZED EXCITONIC CENTERS IN INGAN/GAN MULTIPLE QUANTUM WELLS (1998) (413)
- High-power AlGaN/GaN HEMTs for Ka-band applications (2005) (399)
- AlGaN/AlN/GaN high-power microwave HEMT (2001) (394)
- Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3 (1996) (386)
- POLARIZATION-INDUCED CHARGE AND ELECTRON MOBILITY IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY (1999) (379)
- High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates (2006) (363)
- Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy (1997) (350)
- Dislocation mediated surface morphology of GaN (1999) (348)
- AlGaN/GaN high electron mobility transistors with InGaN back-barriers (2006) (342)
- Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition (2002) (332)
- VERY HIGH BREAKDOWN VOLTAGE AND LARGE TRANSCONDUCTANCE REALIZED ON GAN HETEROJUNCTION FIELD EFFECT TRANSISTORS (1996) (329)
- Electrical characterization of GaN p-n junctions with and without threading dislocations (1998) (324)
- Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays (2013) (324)
- Heavy doping effects in Mg-doped GaN (2000) (322)
- Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire (1995) (309)
- High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN (1999) (300)
- AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy (2001) (295)
- Efficient and Color‐Tunable Oxyfluoride Solid Solution Phosphors for Solid‐State White Lighting (2011) (294)
- Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting (2013) (287)
- Consequences of Optimal Bond Valence on Structural Rigidity and Improved Luminescence Properties in SrxBa2–xSiO4:Eu2+ Orthosilicate Phosphors (2014) (270)
- High breakdown GaN HEMT with overlapping gate structure (2000) (266)
- Coupling of InGaN quantum-well photoluminescence to silver surface plasmons (1999) (266)
- Dislocation generation in GaN heteroepitaxy (1998) (265)
- Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices (2012) (261)
- Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition (1996) (252)
- CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES 3202 Controlled doping of phthalocyanine layers by cosublimation with acceptor molecules: A systematic Seebeck and conductivity study (1998) (251)
- High Al-content AlGaN/GaN MODFETs for ultrahigh performance (1998) (251)
- ENHANCED MG DOPING EFFICIENCY IN AL0.2GA0.8N/GAN SUPERLATTICES (1999) (245)
- MBE and MOCVD growth and properties of self-assembling quantum dot arrays in III-V semiconductor structures (1994) (239)
- High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes (2007) (238)
- Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition (1998) (236)
- Indium tin oxide contacts to gallium nitride optoelectronic devices (1999) (225)
- Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN (1996) (222)
- Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition (1998) (221)
- Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges (2010) (219)
- High-brightness polarized light-emitting diodes (2012) (215)
- Sr2.975−xBaxCe0.025AlO4F: a Highly Efficient Green-Emitting Oxyfluoride Phosphor for Solid State White Lighting (2010) (211)
- High internal and external quantum efficiency InGaN/GaN solar cells (2011) (205)
- Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode (2005) (204)
- Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates (2005) (203)
- Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution (2006) (201)
- Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes (2007) (200)
- Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak (2004) (199)
- Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting (2011) (194)
- Measurement of electron overflow in 450 nm InGaN light-emitting diode structures (2009) (186)
- Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition (2009) (185)
- Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy (2003) (182)
- Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB (2001) (174)
- LaSr2AlO5, a Versatile Host Compound for Ce3+-Based Yellow Phosphors: Structural Tuning of Optical Properties and Use in Solid-State White Lighting (2009) (172)
- Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures (2003) (171)
- Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V (1997) (170)
- Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes (2008) (170)
- GaN microwave electronics (1997) (170)
- Spin coherence and dephasing in GaN (2001) (169)
- White light from InGaN/conjugated polymer hybrid light-emitting diodes (1997) (169)
- Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction (2005) (165)
- Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors (2001) (165)
- Widely tunable sampled grating DBR laser with integrated electroabsorption modulator (1999) (165)
- Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells (2012) (164)
- Low interface trap density for remote plasma deposited SiO2 on n‐type GaN (1996) (164)
- High-Power Blue-Violet Semipolar (202̄1̄) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2 (2011) (163)
- Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys (2002) (160)
- Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates (2008) (159)
- Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition (2004) (156)
- High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (2021) GaN Substrates (2010) (156)
- Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition (2007) (156)
- Homogeneous and heterogeneous thermal decomposition rates of trimethylgallium and arsine and their relevance to the growth of GaAs by MOCVD (1986) (155)
- Threading dislocation reduction via laterally overgrown nonpolar (112̄0)a-plane GaN (2002) (154)
- A yellow-emitting Ce3+ phosphor, La1−xCexSr2AlO5, for white light-emitting diodes (2008) (153)
- High-performance E-mode AlGaN/GaN HEMTs (2006) (153)
- Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward “Lighting Revolution” (2012) (149)
- Optical properties of InGaN quantum wells (1999) (149)
- Efficient and stable laser-driven white lighting (2013) (149)
- N-polar GaN epitaxy and high electron mobility transistors (2013) (148)
- Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures (1999) (148)
- Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs (2005) (147)
- Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth (1999) (146)
- Polarization-enhanced Mg doping of AlGaN/GaN superlattices (1999) (143)
- Measured microwave power performance of AlGaN/GaN MODFET (1996) (140)
- Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition (2008) (140)
- Proxies from Ab Initio Calculations for Screening Efficient Ce3+ Phosphor Hosts (2013) (139)
- Structural and morphological characteristics of planar (112̄0) a-plane gallium nitride grown by hydride vapor phase epitaxy (2003) (135)
- Infrared and Raman-scattering studies in single-crystalline GaN nanowires (2001) (134)
- Improved electroluminescence on nonpolar m ‐plane InGaN/GaN quantum wells LEDs (2007) (131)
- Design of sampled grating DBR lasers with integrated semiconductor optical amplifiers (2000) (131)
- Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy (2011) (131)
- Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition (2003) (130)
- Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films (2003) (129)
- Photonic crystal laser lift-off GaN light-emitting diodes (2006) (127)
- SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN (2000) (126)
- High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm (2011) (125)
- Improved quality (112¯0)a-plane GaN with sidewall lateral epitaxial overgrowth (2006) (125)
- AlGaN/GaN current aperture vertical electron transistors with regrown channels (2004) (122)
- Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact (2015) (121)
- High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition. (2018) (121)
- 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication. (2015) (121)
- Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition (2004) (121)
- A quantum-well-intermixing process for wavelength-agile photonic integrated circuits (2002) (121)
- Group III-nitride lasers: a materials perspective (2011) (120)
- Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques (2005) (119)
- Measured and calculated radiative lifetime and optical absorption of In x Ga 1 − x N / G a N quantum structures (2000) (119)
- Phosphorous Diffuser Diverged Blue Laser Diode for Indoor Lighting and Communication (2015) (118)
- Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes (2000) (118)
- High luminous flux from single crystal phosphor-converted laser-based white lighting system. (2016) (118)
- Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask (2006) (116)
- AlGaN/GaN heterojunction bipolar transistor (1999) (115)
- Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers (2012) (115)
- Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy (2000) (111)
- Hydrogen passivation of deep levels in n–GaN (2000) (111)
- Role of inclined threading dislocations in stress relaxation in mismatched layers (2005) (109)
- Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs (2017) (109)
- Effect of threading dislocation density on Ni∕n-GaN Schottky diode I-V characteristics (2006) (106)
- Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells (2004) (106)
- Gallium nitride based transistors (2001) (105)
- High-power polarization-engineered GaN/AlGaN/GaN HEMTs without surface passivation (2004) (105)
- Growth and characterization of N-polar InGaN/GaN multiquantum wells (2007) (103)
- A green-yellow emitting oxyfluoride solid solution phosphor Sr2Ba(AlO4F)1−x(SiO5)x:Ce3+ for thermally stable, high color rendition solid state white lighting (2012) (103)
- Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer (1999) (102)
- High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers (1999) (102)
- High power and high efficiency green light emitting diode on free‐standing semipolar (11$ \bar 2 $2) bulk GaN substrate (2007) (101)
- Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes (2009) (100)
- Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies (2000) (99)
- High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (101̄1̄) Bulk GaN Substrates (2007) (97)
- 2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system. (2015) (97)
- Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes (2007) (96)
- Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates (2009) (95)
- Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells (2006) (95)
- Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTs (2001) (95)
- High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-plane Bulk GaN Substrate (2007) (93)
- Gallium-nitride-based materials for blue to ultraviolet optoelectronics devices (1997) (93)
- The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor Deposition (1998) (92)
- Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHz (1997) (92)
- Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition (1998) (91)
- Growth of Heteroepitaxial ZnO Thin Films on GaN‐Buffered Al2O3 (0001) Substrates by Low‐Temperature Hydrothermal Synthesis at 90 °C (2007) (91)
- Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts (2005) (91)
- Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD (1998) (90)
- Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction (2000) (90)
- Hybrid tunnel junction contacts to III–nitride light-emitting diodes (2016) (90)
- A widely tunable high-speed transmitter using an integrated SGDBR laser-semiconductor optical amplifier and Mach-Zehnder modulator (2003) (90)
- High-Power, Low-Efficiency-Droop Semipolar (2021) Single-Quantum-Well Blue Light-Emitting Diodes (2012) (89)
- Stable, Heat-Conducting Phosphor Composites for High-Power Laser Lighting. (2018) (88)
- High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate (2007) (87)
- Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy (2005) (86)
- HIGH MOBILITY TWO-DIMENSIONAL ELECTRON GAS IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (1999) (86)
- Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching (2004) (86)
- GaN blue photonic crystal membrane nanocavities (2005) (86)
- Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells (1998) (86)
- High quality AlN grown on SiC by metal organic chemical vapor deposition (2008) (85)
- Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation (2019) (85)
- Two-photon absorption study of GaN (2000) (85)
- AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm (2009) (84)
- AlGaN/GaN polarization-doped field-effect transistor for microwave power applications - eScholarship (2004) (84)
- Morphological and Structural Transitions in GaN Films Grown on Sapphire by Metal-Organic Chemical Vapor Deposition (1996) (84)
- Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching (2004) (84)
- Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques (2004) (84)
- Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN (1995) (84)
- Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer (2004) (83)
- Refractive index study of AlxGa1−xN films grown on sapphire substrates (2003) (83)
- CATHODOLUMINESCENCE MAPPING OF EPITAXIAL LATERAL OVERGROWTH IN GALLIUM NITRIDE (1999) (82)
- Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition (2008) (81)
- Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence (1998) (80)
- Direct water photoelectrolysis with patterned n-GaN (2007) (79)
- AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes (2007) (79)
- Effect of doping and polarization on carrier collection in InGaN quantum well solar cells (2011) (78)
- Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture (2015) (77)
- Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter (2020) (77)
- High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes (2011) (77)
- Characterization of blue-green m-plane InGaN light emitting diodes (2009) (77)
- Femtosecond studies of carrier dynamics in InGaN (1997) (76)
- Growth and characteristics of Fe-doped GaN (2003) (76)
- Progress in the growth of nonpolar gallium nitride (2007) (75)
- Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN (2007) (74)
- An efficient, thermally stable cerium-based silicate phosphor for solid state white lighting. (2013) (74)
- Impact of Internal Electric Field and Localization Effect on Quantum Well Excitons in AlGaN/GaN/InGaN Light Emitting Diodes (2001) (74)
- Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers (2006) (74)
- Metalorganic chemical vapor deposition of group III nitrides: a discussion of critical issues (2003) (74)
- La1−x−0.025Ce0.025Sr2+xAl1−xSixO5 solid solutions as tunable yellow phosphors for solid state white lighting (2009) (73)
- Formation of coherently strained self-assembled InP quantum islands on InGaP/GaAs(001) (1994) (73)
- Short-channel Al/sub 0.5/Ga/sub 0.5/N-GaN MODFETs with power density >3 W/mm at 18 GHz (1997) (73)
- High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates (2010) (73)
- Blue Diode Lasers (2000) (73)
- Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN (2010) (73)
- Optical Properties of GaAs Confined in the Pores of MCM-41 (1998) (72)
- Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates (2006) (72)
- Accurate mobility and carrier concentration analysis for GaN (1997) (72)
- Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation (2006) (71)
- Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures (2008) (71)
- Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN (2005) (71)
- 30-mW-Class High-Power and High-Efficiency Blue Semipolar (101̄1̄) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique (2010) (71)
- GaN HBT: toward an RF device (2001) (70)
- High power AlGaN/GaN HEMTs for microwave applications (1997) (70)
- Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs (2006) (70)
- GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy (1987) (69)
- Radiative recombination lifetime measurements of InGaN single quantum well (1996) (69)
- High conductivity modulation doped AlGaN/GaN multiple channel heterostructures (2003) (69)
- High-Modulation-Efficiency, Integrated Waveguide Modulator–Laser Diode at 448 nm (2016) (69)
- Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition (2003) (68)
- Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes (2010) (68)
- Lattice Tilt and Misfit Dislocations in (1122) Semipolar GaN Heteroepitaxy (2010) (67)
- Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells (1998) (67)
- 444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer (2012) (67)
- V-Gate GaN HEMTs for X-Band Power Applications (2008) (66)
- High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates (2013) (66)
- Time-resolved photoluminescence of In x Ga 1 − x N / G a N multiple quantum well structures: Effect of Si doping in the barriers (2001) (65)
- Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire (2000) (65)
- Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes (2011) (65)
- Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment (2006) (65)
- Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors. (2017) (65)
- Green Semipolar (202̄1̄) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth (2013) (64)
- Depletion region effects in Mg-doped GaN (2000) (64)
- High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology (2003) (64)
- Future of group-III nitride semiconductor green laser diodes [Invited] (2010) (64)
- Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction (2016) (64)
- Ultrafast electron dynamics study of GaN (1999) (64)
- Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate (2005) (64)
- Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth (2007) (63)
- Review—Progress in High Performance III-Nitride Micro-Light-Emitting Diodes (2019) (63)
- Optical waveguide simulations for the optimization of InGaN-based green laser diodes (2010) (63)
- High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes (2010) (63)
- Kilovolt AlGaN/GaN HEMTs as Switching Devices (2001) (63)
- Study of nonpolar m-plane InGaN∕GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition (2007) (62)
- Optical polarization characteristics of m-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure (2008) (62)
- Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD (1998) (61)
- Chemical mechanical polishing of gallium nitride (2002) (60)
- Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope (2003) (59)
- Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes (1998) (59)
- Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching (2014) (58)
- Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition (1997) (58)
- Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy (2002) (57)
- Preparation of indium nitride micro- and nanostructures by ammonolysis of indium oxide (2004) (57)
- Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN (2013) (57)
- High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design (2014) (57)
- Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition (2001) (57)
- High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration (2014) (57)
- High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts (1998) (57)
- Effect of ohmic contacts on buffer leakage of GaN transistors (2006) (57)
- Simulation and optimization of 420-nm InGaN/GaN laser diodes (2000) (56)
- Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz (2007) (56)
- Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact. (2016) (56)
- Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells (2012) (56)
- Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes (2012) (56)
- Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN (2001) (56)
- Scanning second-harmonic/third-harmonic generation microscopy of gallium nitride (2000) (56)
- Time-resolved photoluminescence studies of InGaN/GaN single-quantum-wells at room temperature (1997) (55)
- Characterization of an AlGaN/GaN two-dimensional electron gas structure (2000) (55)
- Thermal conductivity of lateral epitaxial overgrown GaN films (1999) (55)
- Capture Kinetics of Electron Traps in MBE‐Grown n‐GaN (2001) (55)
- Postgrowth control of the quantum-well band edge for the monolithic integration of widely tunable lasers and electroabsorption modulators (2003) (55)
- In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN (2000) (55)
- Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation (2009) (54)
- Atomic layer epitaxy for the growth of heterostructure devices (1988) (54)
- High-power blue laser diodes with indium tin oxide cladding on semipolar (202¯1¯) GaN substrates (2015) (54)
- Localized exciton dynamics in nonpolar (112¯0) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth (2005) (53)
- Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate (2011) (53)
- Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers (2012) (53)
- Real-time X-ray scattering studies of surface structure during metalorganic chemical vapor deposition of GaN (1999) (53)
- Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy (2013) (53)
- Development of selective lateral photoelectrochemical etching of InGaN/GaN for lift-off applications (2001) (53)
- Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate (2009) (53)
- Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth (2004) (53)
- GaN/InGaN light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth (2008) (53)
- Measurement of second order susceptibilities of GaN and AlGaN (2005) (53)
- Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition (2002) (52)
- Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN Substrates (2007) (52)
- Stability of (1100) m-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition (2006) (52)
- Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes (2008) (51)
- High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells (1998) (51)
- Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures (2008) (51)
- Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy (2011) (51)
- Higher efficiency InGaN laser diodes with an improved quantum well capping configuration (2002) (50)
- Removal of thick (>100nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching (2004) (50)
- Revealing the importance of light extraction efficiency in InGaN/GaN microLEDs via chemical treatment and dielectric passivation (2020) (50)
- Visible resonant modes in GaN-based photonic crystal membrane cavities (2006) (50)
- Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments. (2020) (50)
- High luminous efficacy green light-emitting diodes with AlGaN cap layer. (2016) (50)
- Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition (2008) (50)
- Comparison of deep level incorporation in ammonia and rf‐plasma assisted molecular beam epitaxy n‐GaN films (2008) (50)
- Light-polarization characteristics of electroluminescence from InGaN/GaN light-emitting diodes prepared on (1122)-plane GaN (2006) (49)
- Impact of Substrate Miscut on the Characteristic of m-plane InGaN/GaN Light Emitting Diodes (2007) (49)
- GaN light-emitting diodes with Archimedean lattice photonic crystals (2006) (49)
- MOVPE growth and characterization of Mg-doped GaN (1998) (49)
- Deep-Submicrometer AlGaN/GaN HEMTs With Slant Field Plates (2009) (48)
- Spiral Growth of InGaN Nanoscale Islands on GaN (1998) (48)
- Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy (2006) (48)
- Photoelectrochemical undercut etching for fabrication of GaN microelectromechanical systems (2001) (48)
- Cl2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors (1999) (48)
- AlGaN Deep-Ultraviolet Light-Emitting Diodes Grown on SiC Substrates (2020) (48)
- Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well (2009) (48)
- Influence of inn mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells (2003) (47)
- Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes (2011) (47)
- GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation (2009) (47)
- Systematic characterization of Cl 2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs (2002) (47)
- Compositional Dependence of Nonpolar m-Plane InxGa1-xN/GaN Light Emitting Diodes (2008) (47)
- Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition (2009) (47)
- High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth. (2016) (47)
- V-Gate GaN HEMTs With Engineered Buffer for Normally Off Operation (2008) (47)
- Thermally enhanced blue light-emitting diode (2015) (47)
- GAIN SPECTROSCOPY ON INGAN/GAN QUANTUM WELL DIODES (1997) (46)
- Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy (2000) (46)
- Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition (2017) (46)
- Selective-area regrowth of GaN field emission tips (1997) (46)
- Growth study and impurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition (2011) (46)
- Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes (2018) (46)
- Mg-rich precipitates in the p-type doping of InGaN-based laser diodes (2002) (46)
- High Output Saturation and High-Linearity Uni-Traveling-Carrier Waveguide Photodiodes (2007) (45)
- Observation of growth modes during metal-organic chemical vapor deposition of GaN (1999) (45)
- Comparison of InGaN/GaN light emitting diodes grown on m ‐plane and a ‐plane bulk GaN substrates (2008) (45)
- Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces (2020) (45)
- Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates (2008) (44)
- Low resistance ohmic contact to n-GaN with a separate layer method (1997) (44)
- High temperature thermoelectric properties of optimized InGaN (2011) (44)
- Conduction band offsets in ordered‐GaInP/GaAs heterostructures studied by ballistic‐electron‐emission microscopy (1996) (44)
- Femtosecond Z-scan measurement of GaN (1999) (44)
- Electron mobility in graded AlGaN alloys (2006) (44)
- Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes (2013) (44)
- High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications. (2016) (43)
- Cone‐shaped surface GaN‐based light‐emitting diodes (2005) (43)
- Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5% (2004) (43)
- Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates (2011) (43)
- Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures (1997) (43)
- Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells (2013) (43)
- Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC (2006) (43)
- Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates (2010) (43)
- Recombination dynamics of localized excitons in cubic InxGa1−xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate (2003) (43)
- Metalorganic chemical vapor deposition of highly conductive Al0.65Ga0.35N films (2003) (43)
- Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates. (2017) (42)
- Nonpolar a-plane p-type GaN and p-n Junction Diodes (2004) (42)
- Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication (2020) (42)
- Backside-illuminated photoelectrochemical etching for the fabrication of deeply undercut GaN structures (2000) (42)
- Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures (2012) (41)
- Selective area epitaxy of GaN for electron field emission devices (1997) (41)
- Tunable sampled-grating DBR lasers with integrated wavelength monitors (1998) (41)
- m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching (2009) (41)
- N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier (2008) (41)
- Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact (2018) (41)
- Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire (2005) (41)
- Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates (2001) (40)
- Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties (2014) (40)
- Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding (2009) (39)
- Structure–composition relationships and optical properties in cerium-substituted (Sr,Ba)3(Y,La)(BO3)3 borate phosphors (2013) (39)
- Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering (1998) (39)
- Substitution of oxygen by fluorine in the GdSr2AlO5:Ce3+ phosphors: Gd1-xSr2+xAlO5-xFx solid solutions for solid state white lighting. (2009) (39)
- Impact of strain on free-exciton resonance energies in wurtzite AlN (2007) (39)
- Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0 0) and semipolar (1 1 2) orientations (2009) (39)
- Maskless lateral epitaxial overgrowth of high-aluminum-content AlxGa1−xN (2004) (39)
- LARGE COHERENT ACOUSTIC-PHONON OSCILLATION OBSERVED IN INGAN/GAN MULTIPLE-QUANTUM WELLS (1999) (39)
- Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors (2001) (39)
- Photocurrent decay in n‐type GaN thin films (1996) (39)
- Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture (2016) (39)
- Ridge waveguide sampled grating DBR lasers with 22-nm quasi-continuous tuning range (1998) (39)
- Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates (2013) (39)
- Surface structured optical coatings with near-perfect broadband and wide-angle antireflective properties. (2014) (39)
- Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells (2011) (38)
- Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer (2009) (38)
- Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency (2017) (38)
- Epitaxially-grown GaN junction field effect transistors (2000) (38)
- Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy (2014) (38)
- The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs (2009) (38)
- AlGaN/GaN HBTs using regrown emitter (1999) (37)
- Atmospheric pressure atomic layer epitaxy : mechanisms and applications (1991) (37)
- Structural and optical characteristics of InxGa1−xN/GaN multiple quantum wells with different In compositions (1999) (37)
- The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes (2012) (37)
- Linear and nonlinear optical properties of In x Ga 1 − x N / G a N heterostructures (2000) (37)
- Optical evidence for lack of polarization in (112¯0) oriented GaN∕(AlGa)N quantum structures (2005) (37)
- Layer-by-layer growth of GaN induced by silicon (2000) (36)
- Coherent optical control of acoustic phonon oscillations in InGaN/GaN multiple quantum wells (2001) (36)
- Improving color rendition in solid state white lighting through the use of quantum dots (2013) (36)
- Growth evolution in sidewall lateral epitaxial overgrowth (SLEO) (2007) (36)
- Thermally Induced Pore Formation in Epitaxial ZnO Films Grown from Low Temperature Aqueous Solution (2011) (36)
- Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals (2011) (36)
- GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition (2018) (36)
- Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells (1998) (36)
- Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates (2005) (35)
- Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs (2012) (35)
- High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration (1999) (35)
- Very high voltage operation (>330 V) with high current gain of AlGaN/GaN HBTs (2003) (35)
- Quantitative observation and discrimination of AlGaN- and GaN-related deep levels in AlGaN∕GaN heterostructures using capacitance deep level optical spectroscopy (2006) (35)
- Probing local structure in the yellow phosphor LaSr2AlO5 : Ce3+, by the maximum entropy method and pair distribution function analysis (2009) (35)
- Surface Structure of GaN(0001) in the Chemical Vapor Deposition Environment (1999) (35)
- Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes (2010) (34)
- Power and linearity characteristics of GaN MISFETs on sapphire substrate (2004) (34)
- Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy (2010) (34)
- Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding (2006) (34)
- 40-Gb/s Widely Tunable Low-Drive-Voltage Electroabsorption-Modulated Transmitters (2007) (34)
- Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes. (2013) (33)
- Dominant role of the piezoelectric field in the pressure behavior of InGaN/GaN quantum wells (2001) (33)
- Optical properties of extended and localized states in m-plane InGaN quantum wells (2013) (33)
- GaN/AlGaN MODFET with 80 GHz f/sub max/ and >100 V gate-drain breakdown voltage (1997) (33)
- Microwave Power Performance N-Polar GaN MISHEMTs Grown by MOCVD on SiC Substrates Using an $\hbox{Al}_{2}\hbox{O}_{3}$ Etch-Stop Technology (2012) (33)
- GaN field emitter array diode with integrated anode (1998) (33)
- Optimization of AlGaN/GaN HEMTs for high frequency operation (2006) (33)
- GaN–GaN junctions with ultrathin AlN interlayers: Expanding heterojunction design (2002) (33)
- Nitride-based high electron mobility transistors with a GaN spacer (2006) (33)
- Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs (2009) (33)
- Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar (2021) Blue Light-Emitting Diodes (2012) (33)
- Atomic layer epitaxy of compound semiconductors with metalorganic precursors (1989) (32)
- High voltage operation (>80 V) of GaN bipolar junction transistors with low leakage (2000) (32)
- Stress relaxation and critical thickness for misfit dislocation formation in (101¯0) and (3031¯) InGaN/GaN heteroepitaxy (2012) (32)
- Optical polarization characteristics of InGaN∕GaN light-emitting diodes fabricated on GaN substrates oriented between (101¯0) and (101¯1¯) planes (2008) (32)
- Cracking of III-nitride layers with strain gradients (2006) (32)
- High Power and High Efficiency Semipolar InGaN Light Emitting Diodes (2008) (32)
- Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well (2014) (31)
- Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography (2017) (31)
- Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN (2009) (31)
- Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates. (2016) (31)
- The growth of N-face GaN by MOCVD: effect of Mg, Si, and In (2004) (31)
- Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate (2007) (31)
- Development of high performance green c-plane III-nitride light-emitting diodes. (2018) (31)
- Erratum: “Increased Polarization Ratio on Semipolar (1122) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition” (2008) (31)
- Advanced integration schemes for high-functionality/high-performance photonic integrated circuits (2006) (31)
- GaN-Based FETs for Microwave Power Amplification (1999) (30)
- Generation of coherent acoustic phonons in strained GaN thin films (2001) (30)
- Gallium Nitride Powders from Ammonolysis: Influence of Reaction Parameters on Structure and Properties (2004) (30)
- High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes (2011) (30)
- Dynamic characteristics of 410 nm semipolar (202¯1¯) III-nitride laser diodes with a modulation bandwidth of over 5 GHz (2016) (30)
- Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes (2014) (30)
- Widely tunable continuous-wave InGaAsP/InP sampled grating lasers (1994) (30)
- Defect-mediated surface morphology of nonpolar m-plane GaN (2007) (30)
- Ballistic electron emission microscopy study of transport in GaN thin films (1997) (29)
- Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance (2009) (29)
- Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers (1998) (29)
- Comparison of time‐resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates (2009) (29)
- Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes (2016) (29)
- Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template. (2019) (29)
- Step-flow growth of ZnO(0 0 0 1) on GaN(0 0 0 1) by metalorganic chemical vapor epitaxy (2008) (29)
- Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition (2010) (29)
- Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy (2006) (29)
- Large interband second-order susceptibilities in InxGa1−xN/GaN quantum wells (1999) (29)
- Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures (2011) (29)
- Demonstration of ultra-small ( 0.2%) for mini-displays (2021) (29)
- Semipolar III–nitride quantum well waveguide photodetector integrated with laser diode for on-chip photonic system (2017) (29)
- High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes (2010) (29)
- Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC (2018) (28)
- Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts (2015) (28)
- Electrical characterization of p-type N-polar and Ga-polar GaN grown by metalorganic chemical vapor deposition (2007) (28)
- NEAR-FIELD SCANNING OPTICAL MICROSCOPY OF INDIUM GALLIUM NITRIDE MULTIPLE-QUANTUM-WELL LASER DIODES (1999) (28)
- Scanning tunneling microscope-induced luminescence of GaN at threading dislocations (1999) (28)
- Channeling as a mechanism for dry etch damage in GaN (2000) (28)
- Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates (2010) (27)
- Highly efficient broad‐area blue and white light‐emitting diodes on bulk GaN substrates (2009) (27)
- Electroluminescence Characterization of (2021) InGaN/GaN Light Emitting Diodes with Various Wavelengths (2010) (27)
- Tuning luminescent properties through solid-solution in (Ba1−xSrx)9Sc2Si6O24:Ce3+,Li+ (2013) (27)
- Minority-carrier lifetimes in undoped AlGaAs/GaAs multiple quantum wells (1989) (27)
- Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells (2010) (27)
- InGaN/GaN Blue Laser Diode Grown on Semipolar (3031) Free-Standing GaN Substrates (2010) (27)
- Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes. (2017) (27)
- Pump-probe spectroscopy of band tail states in metalorganic chemical vapor deposition-grown InGaN (1998) (27)
- Optical polarization of m ‐plane In‐GaN/GaN light‐emitting diodes characterized via confocal microscope (2008) (27)
- Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition (2009) (26)
- 384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer (2012) (26)
- Characterization of MOCVD-grown InP on InGaP/GaAs(001) (1995) (26)
- Non‐polar‐oriented InGaN light‐emitting diodes for liquid‐crystal‐display backlighting (2008) (26)
- Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques (2007) (26)
- First-Moment Analysis of Polarized Light Emission from InGaN/GaN Light-Emitting Diodes Prepared on Semipolar Planes (2006) (26)
- Chip Shaping for Light Extraction Enhancement of Bulk c-Plane Light-Emitting Diodes (2012) (26)
- 3D simulation and analysis of AlGaN/GaN ultraviolet light-emittings diodes (2004) (26)
- High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells (2015) (26)
- Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures (2001) (26)
- Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes (2016) (26)
- Ge-spacer technology in AlGaN/GaN HEMTs for mm-wave applications (2005) (26)
- Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique (2004) (26)
- High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy. (2012) (26)
- N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire Substrate (2011) (26)
- Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients. (2017) (26)
- Light Emitting Diodes with ZnO Current Spreading Layers Deposited from a Low Temperature Aqueous Solution (2009) (26)
- Ultrafast optical characterization of carrier capture times in InxGa1−xN multiple quantum wells (2000) (26)
- Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates (2020) (26)
- Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition (2009) (26)
- Solar-blind AlGaN 256x256 p-i-n detectors and focal plane arrays (2006) (26)
- Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect (2009) (25)
- Droop improvement in high current range on PSS-LEDs (2011) (25)
- Growth and properties of InGaN nanoscale islands on GaN (1998) (25)
- Non-planar Selective Area Growth and Characterization of GaN and AlGaN (2003) (25)
- High-Temperature Polarization-Free III-Nitride Solar Cells with Self-Cooling Effects (2019) (25)
- Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W (2016) (25)
- High-breakdown-voltage AlInAs/GaInAs junction-modulated HEMT's (JHEMT's) with regrown ohmic contacts by MOCVD (1993) (25)
- Correlation between Optical Polarization and Luminescence Morphology of (1122)-Oriented InGaN/GaN Quantum-Well Structures (2009) (25)
- Step bunching on the vicinal GaN(0001) surface Phys. Rev. B: Rapid Communications 62 (2000) R10661. (2000) (25)
- Study of Low-Efficiency Droop in Semipolar ( $20\bar{2}\bar{1}$) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence (2016) (24)
- N-Polar InAlN/AlN/GaN MIS-HEMTs (2010) (24)
- Widely tunable negative-chirp SG-DBR laser/EA-modulated transmitter (2005) (24)
- Demonstration of ultra-small (<10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (>0.2%) for mini-displays (2020) (24)
- Effect of atmospheric pressure MOCVD growth conditions on UV band-edge photoluminescence in GaN thin films (1995) (24)
- Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth (2008) (24)
- Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography (2013) (24)
- Growth of high purity N-polar (In,Ga)N films (2017) (24)
- Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing (2004) (24)
- Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy. (2006) (23)
- Effects of off-axis GaN substrates on optical properties of m-plane InGaN/GaN light-emitting diodes (2008) (23)
- Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction (2018) (23)
- RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate (2009) (23)
- Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission (2012) (23)
- Compact, 4 x 4 InGaAsP-InP optical crossconnect with a scaleable architecture (1998) (23)
- Flow modulation epitaxy of indium gallium nitride (1997) (23)
- Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells (1999) (23)
- Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN (2019) (23)
- Suppressing void defects in long wavelength semipolar (202¯1¯) InGaN quantum wells by growth rate optimization (2013) (23)
- Near-field investigation of spatial variations of (202̄1̄) InGaN quantum well emission spectra (2013) (23)
- Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN (2001) (23)
- High wall-plug efficiency blue III-nitride LEDs designed for low current density operation. (2017) (23)
- A facile route to patterned epitaxial ZnO nanostructures by soft lithography (2011) (23)
- Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1 12 2) Plane Gallium Nitrides (2009) (23)
- Suppressed modal interference switches with integrated curved amplifiers for scaleable photonic crossconnects (1998) (23)
- High-performance submicrometer gatelength GaInAs/InP composite channel HEMT's with regrown ohmic contacts (1996) (23)
- Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors (1998) (23)
- Semipolar (202̄1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage (2013) (22)
- Photoelectrochemical Properties of Nonpolar and Semipolar GaN (2007) (22)
- AlGaN/AlN distributed bragg reflectors for deep ultraviolet wavelengths (2006) (22)
- Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design (2004) (22)
- Red-emitting SrIn2O4 : Eu3+ phosphor powders for applications in solid state white lamps (2008) (22)
- MOCVD-Grown AlGaN Buffer GaN HEMTs With V-Gates for Microwave Power Applications (2009) (22)
- Band gap bowing and exciton localization in strained cubic InxGa1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy (2001) (22)
- Electrical and structural characterization of Mg-doped p-type Al0.69Ga0.31N films on SiC substrate (2007) (22)
- Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates (2010) (22)
- Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells (2015) (22)
- Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors (2014) (22)
- Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (202¯1¯) III-nitride laser diodes with chemically assisted ion beam etched facets (2016) (22)
- Tertiarybutylarsine and tertiarybutylphosphine for the MOCVD growth of low threshold 1.55 μm InxGa1-xAs/InP quantum-well lasers (1994) (22)
- Improvement of GaN-based laser diode facets by FIB polishing (1998) (22)
- Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes (2004) (22)
- Effects of Phosphor Application Geometry on White Light-Emitting Diodes (2006) (22)
- Color-tunable <10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates (2020) (22)
- Metalorganic Chemical Vapor Deposition Conditions for Efficient Silicon Doping in High Al-Composition AlGaN Films (2005) (21)
- Multiple-band-edge quantum-well intermixing in the InGaAs∕InGaAsP∕InGaP material system (2005) (21)
- Piezoelectric surface barrier lowering applied to InGaN/GaN field emitter arrays (1998) (21)
- Nonpolar (11&1macr;0) a-Plane Gallium Nitride Thin Films Grown on (1&1macr;02) r-Plane Sapphire: Heteroepitaxy and Lateral Overgrowth (2002) (21)
- Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide (2005) (21)
- Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN∕GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth (2007) (21)
- Technique to evaluate the diode ideality factor of light-emitting diodes (2010) (21)
- Geometrical Characteristics and Surface Polarity of Inclined Crystallographic Planes of the Wurtzite and Zincblende Structures (2009) (21)
- Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications (2016) (21)
- m-plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers (2009) (21)
- Optical Spectroscopy of InGaN/GaN Quantum Wells (1999) (21)
- Semipolar ( 20 21 ¯ ) InGaN/GaN micro-photodetector for gigabit-per-second visible light communication (2019) (21)
- Optimization of Device Structures for Bright Blue Semipolar (1011) Light Emitting Diodes via Metalorganic Chemical Vapor Deposition (2010) (21)
- Influence of Mg-doped barriers on semipolar (202¯1) multiple-quantum-well green light-emitting diodes (2011) (21)
- Very high channel conductivity in ultra-thin channel N-polar GaN/(AlN, InAlN, AlGaN) high electron mobility hetero-junctions grown by metalorganic chemical vapor deposition (2013) (21)
- High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier (2015) (20)
- Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contacts. (2019) (20)
- Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness (2007) (20)
- Well-width dependent studies of InGaN-GaN single-quantum wells using time-resolved photoluminescence techniques (1997) (20)
- Photoelectrochemical etching of p-type GaN heterostructures (2009) (20)
- Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates (2013) (20)
- Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications. (2018) (20)
- Continuous-wave operation of a semipolar InGaN distributed-feedback blue laser diode with a first-order indium tin oxide surface grating. (2019) (20)
- Characterizing the nanoacoustic superlattice in a phonon cavity using a piezoelectric single quantum well (2006) (20)
- Study of interface barrier of SiNx/GaN interface for nitrogen-polar GaN based high electron mobility transistors (2008) (20)
- Formation of self‐assembled InP islands on a GaInP/GaAs(311)A surface (1996) (20)
- Design and demonstration of novel QW intermixing scheme for the integration of UTC-type photodiodes with QW-based components (2006) (20)
- Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers. (2018) (20)
- Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition (2019) (20)
- True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy (2013) (20)
- Investigation of the piezoelectric polarization in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy (2002) (19)
- Low-temperature scanning tunneling microscope-induced luminescence of an InGaN/GaN multiquantum well (1999) (19)
- High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications (2009) (19)
- Integration of semiconductor laser amplifiers with sampled grating tunable lasers for WDM applications (1997) (19)
- Electroluminescence efficiency of -oriented InGaN-based light-emitting diodes at low temperature (2008) (19)
- Monolithic translucent BaMgAl10O17:Eu2+ phosphors for laser-driven solid state lighting (2016) (19)
- High-performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates (2011) (19)
- Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells (2011) (19)
- Electroluminescence enhancement of (112¯2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates (2011) (19)
- Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells (2006) (19)
- Synthesis of luminescing (In,Ga)N nanoparticles from an inorganic ammonium fluoride precursor (2005) (19)
- Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures (2007) (19)
- Trade-off between bandwidth and efficiency in semipolar (202¯1¯) InGaN/GaN single- and multiple-quantum-well light-emitting diodes (2018) (19)
- Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure (2000) (19)
- Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells (2002) (19)
- Plane Dependent Growth of GaN in Supercritical Basic Ammonia (2008) (19)
- Output Saturation and Linearity of Waveguide Unitraveling-Carrier Photodiodes (2008) (19)
- AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate (2004) (19)
- Interwell carrier transport in InGaN/(In)GaN multiple quantum wells (2019) (18)
- Impact of Point Defects on the Luminescence Properties of (Al,Ga)N (2008) (18)
- Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices (2016) (18)
- Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates (2000) (18)
- Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition (2012) (18)
- Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) (2002) (18)
- Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN (2016) (18)
- Effect of Al Composition and Gate Recess on Power Performance of AlGaN/GaN High-Electron Mobility Transistors (2008) (18)
- Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics. (2020) (18)
- Tunable sampled-grating DBR lasers using quantum-well intermixing (2002) (18)
- Internal efficiency analysis of 280-nm light emitting diodes (2004) (18)
- Growth of thick (112¯0) GaN using a metal interlayer (2004) (18)
- Cleaved GaN facets by wafer fusion of GaN to InP (1996) (18)
- Electrically pumped distributed feedback nitride lasers employing embedded dielectric gratings (1999) (18)
- Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes (2014) (18)
- Characterization of AlGaN/GaN p-n diodes with selectively regrown n-AlGaN by metal-organic chemical-vapor deposition and its application to GaN-based bipolar transistors (2005) (18)
- InP islands on InGaP/GaAs(001): island separation distributions (1997) (18)
- Structural and electrical characterization of a‐plane GaN grown on a‐plane SiC (2003) (18)
- Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN (2002) (18)
- Spatial control of InGaN luminescence by MOCVD selective epitaxy (1998) (18)
- Acidic ammonothermal growth of gallium nitride in a liner-free molybdenum alloy autoclave (2016) (18)
- Metal-organic chemical vapor deposition of high quality, high indium composition N-polar InGaN layers for tunnel devices (2017) (17)
- Growth and fabrication of short-wavelength UV LEDs (2004) (17)
- Observation of whispering gallery modes in nonpolar m-plane GaN microdisks (2009) (17)
- Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN (2001) (17)
- Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition (2010) (17)
- Demonstration of high saturation power/high gain SOAs using quantum well intermixing based integration platform (2005) (17)
- Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN (2018) (17)
- AlGaN/GaN HEMT With a Transparent Gate Electrode (2009) (17)
- Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors (2001) (17)
- Solar-blind AlGaN 256×256 p-i-n detectors and focal plane arrays (2006) (16)
- Etching of Ga-face and N-face GaN by Inductively Coupled Plasma (2006) (16)
- Ultrahigh speed performance of a quantum well laser at cryogenic temperatures (1994) (16)
- Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN (2020) (16)
- Electron mobility in N-polar GaN/AlGaN/GaN heterostructuress (2008) (16)
- Photoelectrochemical Undercut Etching of m-Plane GaN for Microdisk Applications (2009) (16)
- Large near resonance third order nonlinearity in GaN (2000) (16)
- Diffuse x-ray scattering from statistically inhomogeneous distributions of threading dislocations beyond the ergodic hypothesis (2008) (16)
- Effect of Substrate Miscut on the Direct Growth of Semipolar (10-1-1) GaN on (100) MgAl2O4 by Metalorganic Chemical Vapor Deposition (2006) (16)
- Tailorable chirp using integrated Mach-Zehnder modulators with tunable sampled grating distributed Bragg reflector lasers (2002) (16)
- Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition (2019) (16)
- Photoluminescence and photoluminescence excitation spectra of In/sub 0.2/Ga/sub 0.8/N-GaN quantum wells: comparison between experimental and theoretical studies (1999) (16)
- Observation of huge nonlinear absorption enhancement near exciton resonance in GaN (2003) (16)
- Influence of silicon doping on vacancies and optical properties of AlxGa1−xN thin films (2007) (16)
- Studies of carrier dynamics in unintentionally doped gallium nitride bandtail states (2001) (16)
- Time-resolved cathodoluminescence study of carrier relaxation, transfer, collection, and filling in coupled In x Ga 1 − x N ∕ Ga N multiple and single quantum wells (2007) (16)
- Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy (2009) (16)
- Lateral confinement of electrons in vicinal N-polar AlGaN/GaN heterostructure (2010) (16)
- Light-emitting metalenses and meta-axicons for focusing and beaming of spontaneous emission (2021) (16)
- Realization of high hole concentrations in Mg doped semipolar (101¯1¯) GaN (2006) (16)
- Temperature dependence of exciton-surface plasmon polariton coupling in Ag, Au, and Al films on InxGa1−xN/GaN quantum wells studied with time-resolved cathodoluminescence (2015) (16)
- 1.3 μm wavelength vertical cavity surface emitting laser fabricated by orientation-mismatched wafer bonding: A prospect for polarization control (2003) (16)
- Femtosecond pump-probe spectroscopy and time-resolved photoluminescence of an In x Ga 1 − x N / GaN double heterostructure (2001) (16)
- Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage (2020) (15)
- Deep submicron AlGaN/GaN HEMTs with ion implanted source/drain regions and non-alloyed ohmic contacts (2007) (15)
- Control of crystallographic tilt in GaN grown on Si (111) by cantilever epitaxy (2002) (15)
- Substrate Reactivity and “Controlled Contamination” in Metalorganic Chemical Vapor Deposition of GaN on Sapphire (1998) (15)
- Stacking faults and interface roughening in semipolar (202¯1¯) single InGaN quantum wells for long wavelength emission (2014) (15)
- Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition (2003) (15)
- Correlation Between DC–RF Dispersion and Gate Leakage in Deeply Recessed GaN/AlGaN/GaN HEMTs (2008) (15)
- Solar‐Blind p‐GaN/i‐AlGaN/n‐AlGaN Ultraviolet Photodiodes on SiC Substrate (2001) (15)
- Chapter 2 Metalorganic Chemical Vapor Deposition (MOCVD) of Group III Nitrides (1997) (15)
- Low Ohmic Contact Resistance m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations (2010) (15)
- Cleaved and etched facet nitride laser diodes (1998) (15)
- Onset of plastic relaxation in semipolar (112¯2) InxGa1−xN/GaN heterostructures (2014) (15)
- Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells (2015) (15)
- Low threshold 1.5 mu m quantum well lasers grown by atmospheric pressure MOCVD with tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) (1993) (15)
- Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers (2018) (15)
- Small signal RF performance of AlGaN/GaN heterojunction bipolar transistors (2002) (15)
- Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates (2012) (15)
- MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells (1997) (15)
- Vertical Stand Transparent Light-Emitting Diode Architecture for High-Efficiency and High-Power Light-Emitting Diodes (2010) (15)
- Control of III-V epitaxy in a metalorganic chemical vapor deposition process : impact of source flow control on composition and thickness (1996) (14)
- Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication (2015) (14)
- Metalorganic chemical vapor deposition of ZnO(0001) thin films on GaN(0001) templates and ZnO(0001) substrates (2008) (14)
- Observation of lasing from photopumped InGaN/GaN heterostructures in an edge emitting configuration (1997) (14)
- Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition. (2020) (14)
- Optical polarization characteristics of light emission from sidewalls of primary-color light-emitting diodes (2008) (14)
- Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using A Two-Step Process (1998) (14)
- Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy (2017) (14)
- Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes (2008) (14)
- Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation (2007) (14)
- Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells (2013) (14)
- Local wing tilt analysis of laterally overgrown GaN by x-ray rocking curve imaging (2005) (14)
- Stable vicinal step orientations in m-plane GaN (2015) (14)
- Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode (2005) (14)
- Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence (2014) (14)
- Maskless Lateral Epitaxial Overgrowth of GaN on Sapphire (1999) (14)
- Enhancing the Light Extraction Efficiency of Blue Semipolar (1011) Nitride-Based Light Emitting Diodes through Surface Patterning (2009) (14)
- Simultaneous four-photon luminescence, third-harmonic generation, and second-harmonic generation microscopy of GaN. (2005) (14)
- Demonstration of relaxed InGaN-based red LEDs grown with high active region temperature (2021) (14)
- Excitation energy-dependent optical characteristics of InGaN/GaN multiple quantum wells (1998) (14)
- 7.4-Gbit/s Visible-Light Communication Utilizing Wavelength-Selective Semipolar Micro-Photodetector (2020) (14)
- High-linearity class B power amplifiers in GaN HEMT technology (2003) (13)
- Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications (2017) (13)
- Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence (1998) (13)
- AlGaN/GaN current aperture vertical electron transistors (2002) (13)
- Crystal quality and growth evolution of aluminum nitride on silicon carbide (2006) (13)
- Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy (2001) (13)
- Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts (2016) (13)
- Demonstration of low resistance ohmic contacts to p-type (202̄1̄) GaN (2015) (13)
- Comparison of the spectral and temporal emission characteristics of homoepitaxial and heteroepitaxial ZnO nanowires (2011) (13)
- Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding (2006) (13)
- InGaN-Based microLED Devices Approaching 1% EQE with Red 609 nm Electroluminescence on Semi-Relaxed Substrates (2021) (13)
- Rapid microwave preparation of cerium-substituted sodium yttrium silicate phosphors for solid state white lighting (2013) (13)
- Thin metal intracavity contact and lateral current-distribution scheme for GaN-based vertical-cavity lasers (2007) (13)
- Growth of highly relaxed InGaN pseudo-substrates over full 2-in. wafers (2021) (13)
- Size-independent peak external quantum efficiency (>2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm (2021) (13)
- High-power LEDs using Ga-doped ZnO current-spreading layers (2016) (13)
- Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202¯1) AlGaN/GaN buffer layers (2015) (13)
- Low damage dry etch for III-nitride light emitters (2015) (13)
- Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures (2015) (13)
- Monolithically Integrated Balanced Uni-Traveling-Carrier Photodiode with Tunable MMI Coupler for Microwave Photonic Circuits (2006) (13)
- High Power and High Efficiency Blue InGaN Light Emitting Diodes on Free-Standing Semipolar (3031) Bulk GaN Substrate (2010) (13)
- Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance (2007) (12)
- GHz modulation bandwidth from single-longitudinal mode violet-blue VCSEL using nonpolar InGaN/GaN QWs (2016) (12)
- Observation of high Q resonant modes in optically pumped GaN/InGaN microdisks fabricated using photoelectrochemical etching (2005) (12)
- Wavelength agile photonic integrated circuits using a novel quantum well intermixing process (2002) (12)
- Impurity incorporation in InGaN grown by rf plasma-assisted molecular beam epitaxy (2002) (12)
- Demonstration of Electrically Injected Semipolar Laser Diode Grown on Low Cost and Scalable Sapphire Substrates. (2019) (12)
- Polarization effects and transport in AlGaN/GaN system (2000) (12)
- Intensity dependent time‐resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a‐plane and planar c‐plane GaN (2005) (12)
- State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes (2010) (12)
- Demonstration of blue semipolar (202¯1¯) GaN-based vertical-cavity surface-emitting lasers. (2019) (12)
- Reconfigurable optical properties in InGaN/GaN quantum wells (1997) (12)
- Blue and aquamarine stress-relaxed semipolar (112¯2) laser diodes (2013) (12)
- Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs (2002) (12)
- Interdigitated multipixel arrays for the fabrication of high-power light-emitting diodes with very low series resistances (2006) (12)
- RF Performance of Deep-Recessed N-Polar GaN MIS-HEMTs Using a Selective Etch Technology Without Ex Situ Surface Passivation (2011) (12)
- High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces (2016) (12)
- InxGa1–xN/AlyGa1–yN violet light emitting diodes with reflective p-contacts for high single sided light extraction (1997) (12)
- Strained GaInAsP single‐quantum‐well lasers grown with tertiarybutylarsine and tertiarybutylphosphine (1993) (12)
- GaN based microwave power HEMTs (1998) (12)
- Improved properties of high-Al-composition AlGaN/GaN high electron mobility transistor structures with thin GaN cap layers (2014) (12)
- Compact InGaAsP/InP 1/spl times/2 optical switch based on carrier induced suppression of modal interference (1997) (12)
- AlGaN/GaN current aperture vertical electron transistors fabricated by photoelectrochemical wet etching (2003) (11)
- Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells. (2017) (11)
- Femtosecond dynamics of exciton bleaching in bulk GaN at room temperature (2002) (11)
- Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN (2013) (11)
- Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate. (2020) (11)
- Influence of composition and well-width fluctuations on optical gain in (In, Ga)N multiple quantum wells (2001) (11)
- Dislocation reduction in GaN films through selective island growth of InGaN (2000) (11)
- Erratum: “Impact of strain on free-exciton resonance energies in wurtzite AlN” [J. Appl. Phys. 102, 123707 (2007)] (2008) (11)
- Electroluminescent and Electrical Characteristics of Polar and Nonpolar InGaN/GaN Light-Emitting Diodes at Low Temperature (2006) (11)
- Cathodoluminescence study of deep ultraviolet quantum wells grown on maskless laterally epitaxial overgrown AlGaN (2004) (11)
- Radiative Recombination Efficiency of InGaN-Based Light-Emitting Diodes Evaluated at Various Temperatures and Injection Currents (2007) (11)
- Recent results and latest views on microcavity LEDs (2004) (11)
- Semipolar Single-Crystal ZnO Films Deposited by Low-Temperature Aqueous Solution Phase Epitaxy on GaN Light-Emitting Diodes (2011) (11)
- InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays (2015) (11)
- In situ studies of the effect of silicon on GaN growth modes (2000) (11)
- Strain relaxation of InGaN/GaN multi-quantum well light emitters via nanopatterning. (2019) (11)
- Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202¯1) InGaN/GaN heterostructures (2012) (11)
- Coalescence of InP Epitaxial Lateral Overgrowth by MOVPE with V/III Ratio Variation (2012) (11)
- Indium surfactant assisted growth of AlN/GaN heterostructures by metal-organic chemical vapor deposition (2001) (11)
- Analytical light-ray tracing in two-dimensional objects for light-extraction problems in light-emitting diodes. (2008) (11)
- Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates (2013) (11)
- Carrier dynamics of abnormal temperature-dependent emission shift in MOCVD-grown InGaN epilayers and InGaN/GaN quantum wells (1998) (10)
- Transition between the 1×1 and surface structures of GaN in the vapor-phase environment (2000) (10)
- Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy (2001) (10)
- Role of V-defect density on the performance of III-nitride green LEDs on sapphire substrates (2021) (10)
- Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells (2007) (10)
- Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes (1999) (10)
- Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC. (2019) (10)
- Measurement of gain current relations for InGaN multiple quantum wells (1998) (10)
- MOCVD Growth of High Output Power Ingan Multiple Quantum Well Light Emitting Diode (1997) (10)
- Third International Conference on Solid State Lighting (2004) (10)
- Influence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells (2008) (10)
- Developments in AlGaN and UV-C LEDs grown on SiC (2018) (10)
- Analysis of Vegard's law for lattice matching In x Al 1-x N to GaN by metalorganic chemical vapor deposition (2017) (10)
- Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs (2006) (10)
- Characteristics of sampled grating DBR lasers with integrated semicondutor optical amplifiers and electroabsorption modulators (2000) (10)
- Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor (2003) (10)
- 40 Gbit/s photonic receivers integrating UTC photodiodes with high- and low-confinement SOAs using quantum well intermixing and MOCVD regrowth (2006) (10)
- Optimization of the p-GaN window layer for InGaN/GaN solar cells (2010) (10)
- Control of a III-V MOCVD process using ultraviolet absorption and ultrasonic concentration monitoring (2001) (10)
- Semipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations (2018) (10)
- 2.6 GHz high-speed visible light communication of 450 nm GaN laser diode by direct modulation (2015) (10)
- Direct evaluation of reflector effects on radiant flux from InGaN-based light-emitting diodes. (2007) (10)
- Observation of Mg-rich precipitates in the p-type doping of GaN-based laser diodes (2001) (10)
- GaxIn1−xAs/AlAs resonant tunneling diodes grown by atmospheric pressure metalorganic chemical vapor deposition (1994) (10)
- Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems (2018) (10)
- Low-temperature Pd bonding of III-V semiconductors (1995) (10)
- Effect of the nucleation layer on stress during cantilever epitaxy of GaN on Si (111) (2002) (10)
- Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time- and spatially-resolved near-field photoluminescence (2017) (10)
- Effects of deposition rate on the size of self-assembled InP islands formed on GaInP/GaAs(100) surfaces (1995) (10)
- Continuous-wave operation of sampled grating tunable lasers with 10 mwatt output power, >60 nm tuning, and monotonic tuning characteristics (1994) (9)
- Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes (2016) (9)
- Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy (2012) (9)
- Microstructure of ZnO films synthesized on MgAl2O4 from low-temperature aqueous solution: growth and post-annealing (2013) (9)
- Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films (2017) (9)
- Recent progress in nonpolar LEDs as polarized light emitters (2009) (9)
- Increased power from deep ultraviolet LEDs via precursor selection (2007) (9)
- Study of temperature effects on loss mechanisms in laser diodes with electron stopper layer (1999) (9)
- Enhanced light extraction from free-standing InGaN/GaN light emitters using bio-inspired backside surface structuring. (2017) (9)
- Experimental technique to correlate optical excitation intensities with electrical excitation intensities for semiconductor optoelectronic device characterization (2008) (9)
- Transient processes in AlGaN/GaN heterostructure field effect transistors (2000) (9)
- Highly linear integrated coherent receivers for microwave photonic links (2009) (9)
- The role of surface and gas phase reactions in atomic layer epitaxy (1989) (9)
- Semipolar InGaN blue laser diodes with a low optical loss and a high material gain obtained by suppression of carrier accumulation in the p-waveguide region (2019) (9)
- Catastrophic optical damage in GaInN multiple quantum wells (1998) (9)
- Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy (2000) (9)
- Monolithic integration of Mach-Zehnder modulators with Sampled Grating Distributed Bragg Reflector lasers (2002) (9)
- Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors (2009) (9)
- Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN (2020) (9)
- Selective Area Mass Transport Regrowth of Gallium Nitride (2001) (9)
- Erratum: “Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching” [Appl. Phys. Lett. 105, 031111 (2014)] (2014) (9)
- Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates (2017) (9)
- Piezoelectric-field-enhanced lateral ambipolar diffusion coefficient in InGaN/GaN multiple quantum wells (2001) (9)
- Monolithically Integrated Coherent Receiver for Highly Linear Microwave Photonic Links (2007) (9)
- Barriers to carrier transport in multiple quantum well nitride-based c -plane green light emitting diodes (2020) (9)
- Continuous-wave operation of a InGaN laser diode with a photoelectrochemically etched current aperture (2015) (9)
- Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes. (2019) (9)
- Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy (2010) (9)
- Third harmonic generation microscopy of GaN (2000) (9)
- Smooth and selective photo-electrochemical etching of heavily doped GaN:Si using a mode-locked 355 nm microchip laser (2016) (9)
- CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates (2016) (8)
- High speed and high power AlGaN/GaN MODFETs (1997) (8)
- Demonstration of InP-InGaAsP vertical grating-assisted codirectional coupler filters and receivers with tapered coupling coefficient distributions (1997) (8)
- Inhomogeneous Current Injection and Filamentary Lasing of Semipolar (2021¯) Blue GaN‐Based Vertical‐Cavity Surface‐Emitting Lasers with Buried Tunnel Junctions (2019) (8)
- Dichromatic color tuning with InGaN-based light-emitting diodes (2008) (8)
- MOCVD Growth and Characterization of InN Quantum Dots (2020) (8)
- Demonstration of a GaN‐spacer high electron mobility transistor with low alloy scattering (2005) (8)
- 444 nm InGaN light emitting diodes on low-defect-density GaN templates on patterned sapphire (2017) (8)
- Flow modulation metalorganic vapor phase epitaxy of GaN at temperatures below 600 ºC (2020) (8)
- Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD (2018) (8)
- Red InGaN micro-light-emitting diodes (>620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact (2022) (8)
- Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy (2007) (8)
- Wavelength-selective grating-assisted codirectional coupler tunable receiver on InP/InGaAsP (1996) (8)
- Room-Temperature Continuous-Wave Electrically Driven Semipolar (202̅1) Blue Laser Diodes Heteroepitaxially Grown on a Sapphire Substrate (2020) (8)
- Development of InGaN/GaN Light Emitting Diodes (LEDs) and Laser Diodes for Energy Efficient Lighting and Displays (2013) (8)
- Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs (2017) (8)
- Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursors (2019) (8)
- Role of defect diffusion in the InP damage profile (1997) (8)
- Flip-chip blue LEDs grown on bulk GaN substrates utilizing photoelectrochemical etching for substrate removal (2016) (8)
- Properties of widely-tunable integrated WDM sources and receivers (1997) (8)
- 560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates. (2020) (8)
- InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Electron Transistors (BAVETs) (2012) (8)
- High performance deeply-recessed GaN power HEMTs without surface passivation (2006) (8)
- Propagation of Spontaneous Emission in Birefringent m-Axis Oriented Semipolar (1122) (Al,In,Ga)N Waveguide Structures (2010) (8)
- Electron Beam Pumped MQW InGaN/GaN Laser (1997) (8)
- Germicidal ultraviolet LEDs: a review of applications and semiconductor technologies (2021) (8)
- Electrical injection of a 440nm InGaN laser with lateral confinement by nanoporous-GaN. (2019) (8)
- AlGaN GaN polarization-doped field-effect transistor for microwave power applications (2004) (7)
- Electronic Properties of InGaN/GaN Vertical‐Cavity Lasers (2007) (7)
- Exploring metalorganic chemical vapor deposition of Si-alloyed Al 2 O 3 dielectrics using disilane (2017) (7)
- Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11–22) GaN Template (2019) (7)
- Blue InGaN/GaN laser diodes grown on (33$ \bar 3 \bar 1 $) free‐standing GaN substrates (2011) (7)
- AlGaN/GaN HEMTs with an InGaN-based back-barrier (2005) (7)
- Hexagonal Truncated Pyramidal Light Emitting Diodes through Wafer Bonding of ZnO to GaN, Laser Lift-off, and Photo Chemical Etching (2008) (7)
- Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors. (2020) (7)
- High polarization and fast modulation speed of dual wavelengths electroluminescence from semipolar (20-21) micro light-emitting diodes with indium tin oxide surface grating (2020) (7)
- Nanoindentation of laterally overgrown epitaxial gallium nitride (2012) (7)
- Comparison of Polished and Dry Etched Semipolar $(11\bar{2}2)$ III-Nitride Laser Facets (2013) (7)
- Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells (2013) (7)
- Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization (2019) (7)
- Enhancement of external quantum efficiency in GaN‐based light emitting diodes using a suspended geometry (2008) (7)
- Crystallographic wing tilt in laterally overgrown GaN (2003) (7)
- MOCVD growth of thick V-pit-free InGaN films on semi-relaxed InGaN substrates (2020) (7)
- High-speed p/sup +/ GaInAs-n InP heterojunction JFET's (HJFET's) grown by MOCVD (1993) (7)
- Demonstration of high wall-plug efficiency III-nitride micro-light-emitting diodes with MOCVD-grown tunnel junction contacts using chemical treatments (2021) (7)
- Spectroscopic studies in InGaN quantum wells (1999) (7)
- Reaction Mechanisms in the Thermal Decomposition of Triethylarsenic and Diethylarsine (1989) (7)
- Suppression of relaxation in (202¯1) InGaN/GaN laser diodes using limited area epitaxy (2012) (7)
- Properties of near-field photoluminescence in green emitting single and multiple semipolar (202̄1) plane InGaN/GaN quantum wells (2016) (7)
- Carrier relaxation dynamics and steady-state charge distributions in coupled InGaN∕GaN multiple and single quantum wells (2007) (7)
- Characterization of InP islands on {InGaP}/{GaAs(001) }: effect of deposition temperature (1995) (7)
- 3-watt AlGaN-GaN HEMTs on sapphire substrates with thermal management by flip-chip bonding (1998) (7)
- Semipolar (202̅1̅) InGaN/GaN micro-photodetector for gigabit-per-second visible light communication (2019) (7)
- Single-Chip 40Gb/s Widely-Tunable Transceivers with Integrated SG-DBR Laser, QW EAM, UTC Photodiode, and Low Confinement SOA (2006) (7)
- On the optical polarization properties of semipolar ( 20 2 ¯ 1 ) and ( 20 2 ¯ 1 ¯ ) InGaN/GaN quantum wells (2018) (6)
- Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas (1999) (6)
- High-temperature electroluminescence properties of InGaN red 40 × 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2% (2021) (6)
- Growth and characterization of AlGaN/GaN/AlGaN field effect transistors (2010) (6)
- Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal (0001¯) GaN (2012) (6)
- Uni-Traveling-Carrier Photodiodes with Increased Output Response and Low Intermodulation Distortion (2007) (6)
- Using band engineering to tailor the emission spectra of trichromatic semipolar InGaN light-emitting diodes for phosphor-free polarized white light emission (2016) (6)
- An InGaAsP/InP integration platform with low loss deeply etched waveguides and record SOA RF-linearity (2011) (6)
- Oxygen doping of c‐plane GaN by metalorganic chemical vapor deposition (2003) (6)
- A study of regrowth interface and material quality for a novel InP-based architecture (2004) (6)
- Mega‐cone blue LEDs based on ZnO/GaN direct wafer bonding (2007) (6)
- Selective and controllable lateral photoelectrochemical etching of nonpolar and semipolar InGaN/GaN multiple quantum well active regions (2015) (6)
- Research Toward a Heterogeneously Integrated InGaN Laser on Silicon (2019) (6)
- Optical properties and carrier dynamics in m ‐plane InGaN quantum wells (2014) (6)
- Metalorganic chemical vapor deposition-grown tunnel junctions for low forward voltage InGaN light-emitting diodes: epitaxy optimization and light extraction simulation (2021) (6)
- Surface Passivation of AlGaN/GaN HEMTs (2008) (6)
- Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition (2019) (6)
- n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor wafer-fused at 550–750 °C (2003) (6)
- From research to manufacture—The evolution of MOCVD (1995) (6)
- Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy (2016) (6)
- Growth and characterization of N‐polar GaN and AlGaN/GaN HEMTs on (111) silicon (2011) (6)
- Semipolar III-nitride laser diodes with zinc oxide cladding. (2017) (6)
- Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy (2008) (6)
- Continuous-wave operation of nonpolar GaN-based vertical-cavity surface-emitting lasers (2018) (6)
- 2DEGs formed in AlN/GaN HEMT structures with AlN grown at low temperature (2021) (6)
- Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition (2014) (6)
- Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN (2006) (6)
- High Voltage AlGaN/GaN Heterojunction Transistors (2004) (6)
- Demonstration of Efficient Semipolar 410 nm Violet Laser Diodes Heteroepitaxially Grown on High-Quality Low-Cost GaN/Sapphire Substrates (2020) (6)
- Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration (2021) (6)
- Demonstration of high efficiency cascaded blue and green micro-light-emitting diodes with independent junction control (2021) (6)
- Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN “double miscut” substrates (2015) (6)
- Effects of active region design on gain and carrier injection and transport of CW semipolar InGaN laser diodes (2016) (6)
- Improved performance of long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1−xN buffer layers (2014) (5)
- MOCVD regrowth of InGaN on N‐polar and Ga‐polar pillar and stripe nanostructures (2007) (5)
- Spin injection in epitaxial MnGa(111)/GaN(0001) heterostructures (2018) (5)
- GaN HFETs and MODFETs with very high breakdown voltage and large transconductance (1996) (5)
- Investigation of oxygen and other impurities and their effect on the transparency of a Na flux grown GaN crystal (2019) (5)
- Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN (2017) (5)
- Carrier dynamics of two distinct localized centers in 530 nm InGaN green light-emitting diodes (2017) (5)
- Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes (2010) (5)
- Fabrication and chemical lift-off of sub-micron scale III-nitride LED structures. (2020) (5)
- Influence of the access resistance in the rf performance of mm-wave AlGaN/GaN HEMTs (2004) (5)
- Optical Anisotropy Studies of Sapphire by Raman Scattering and Spectroscopic Transmission Ellipsometry (1998) (5)
- High speed performance of III-nitride laser diode grown on (2021) semipolar plane for visible light communication (2016) (5)
- Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers (2021) (5)
- Development of gallium nitride-based MEMS structures (2003) (5)
- Demonstration of ultra-small 5 × 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2% (2022) (5)
- High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth (2020) (5)
- Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition (2017) (5)
- Improved compositional uniformity of InGaAsP grown by MOCVD through modification of the susceptor temperature profile (1998) (5)
- AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers (2011) (5)
- Chapter 4 – GaN Laser Diodes on Nonpolar and Semipolar Planes (2012) (5)
- Demonstration of negative chirp characteristics over wide wavelength range using monolithically integrated SG-DBR laser/electroabsorption modulator (2004) (5)
- Defect reduction in (11(2)over-bar0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy (2003) (5)
- Low dark current p-i-n (Al,Ga)N-based solar-blind UV detectors on laterally epitaxially overgrown GaN (1998) (5)
- N-Polar AlGaN/GaN MIS-HEMTs on SiC with a 16.7 W/mm power density at 10 GHz using an Al2O3 based etch stop technology for the gate recess (2011) (5)
- -Pulsed- Operation of -Cleaved-Facet- InGaN Laser -Diodes- (1997) (5)
- The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor (2002) (5)
- Superlattice hole injection layers for UV LEDs grown on SiC (2020) (5)
- Improved quality nonpolar a ‐plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO) (2008) (5)
- Evaluation of GaN substrates grown in supercritical basic ammonia (2009) (5)
- Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy (2007) (5)
- Observations of exciton–surface plasmon polariton coupling and exciton–phonon coupling in InGaN/GaN quantum wells covered with Au, Ag, and Al films (2015) (5)
- Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate. (2019) (5)
- Energy Efficient White LEDs for Sustainable Solid—State Lighting (2008) (5)
- Enhancement-mode m -plane AlGaN/GaN HFETs with regrown n+-GaN contact layer (2012) (5)
- Impact of crystallinity towards the performance of semi-polar (11–22) GaN UV photodetector (2021) (5)
- Optical Dielectric Response of Gallium Nitride Studied by Variable Angle Spectroscopic Ellipsometry (1996) (4)
- Role of graphene interlayers in mitigating degradation of Ni/Au ohmic contact morphology on p-type GaN (2016) (4)
- Quantum well intermixing and MOCVD regrowth for monolithic integration of 40 Gbit/s UTC type photodiodes with QW based components (2005) (4)
- High-performance blue and green laser diodes based on nonpolar/semipolar GaN substrates (2011) (4)
- Measurement of internal quantum efficiency and surface recombination velocity in InGaN structures (1997) (4)
- Integration of high-gain and high-saturation-power active regions using quantum-well intermixing and offset-quantum-well regrowth (2004) (4)
- Breakdown characterization of AlInAs/GaInAs junction modulated HEMTs (JHEMTs) with regrown ohmic contacts by MOCVD (1993) (4)
- Recent Performance of Nonpolar and Semipolar GaN-Based Light Emitting Diodes and Laser Diodes (2007) (4)
- Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on a high quality semipolar GaN/sapphire template (2020) (4)
- Dependence of Electron Overflow on Emission Wavelength and Crystallographic Orientation in Single-Quantum-Well III–Nitride Light-Emitting Diodes (2013) (4)
- Quantum corrections to the electrical conduction in an AlGaN/GaN heterostructure (2001) (4)
- Ohmic Cathode Electrode on the Backside of m-Plane and (2021) Bulk GaN Substrates for Optical Device Applications (2011) (4)
- High-Temperature Electronics in Europe (2000) (4)
- Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications (2004) (4)
- High internal quantum efficiency of long wavelength InGaN quantum wells (2021) (4)
- Erratum: “AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy” [J. Appl. Phys. 90, 5196 (2001)] (2002) (4)
- GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode (2016) (4)
- Optical polarization anisotropy in strained A‐plane GaN films on R‐plane sapphire (2006) (4)
- Color-changing refractive index sensor based on Fano-resonant filtering of optical modes in a porous dielectric Fabry-Pérot microcavity. (2020) (4)
- Violet semipolar (20-2-1) InGaN microcavity light-emitting diode with a 200 nm ultra-short cavity length. (2020) (4)
- The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN (2012) (4)
- Effects of Carrier Localization on the Optical Characteristics of MOCVD‐Grown InGaN/GaN Heterostructures (1999) (4)
- Thermal Performance of Violet and Blue Single-Quantum-Well Nonpolar m-Plane InGaN Light-Emitting Diodes (2013) (4)
- Polarization control of 1.3 /spl mu/m-wavelength vertical cavity surface emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding (2002) (4)
- Passivation of InGaAs/InP surface quantum wells by ion‐gun hydrogenation (1994) (4)
- MOCVD growth of AlGaN films for solar blind photodetectors (2004) (4)
- Combinatorial synthesis and screening of Cerium-doped garnet phosphors for application in white GaN-based LEDs (2001) (4)
- High performance of a semipolar InGaN laser with a phase-shifted embedded hydrogen silsesquioxane (HSQ) grating. (2020) (4)
- AlGaN/GaN MODFETs with low ohmic contact resistances by source/drain n/sup +/ re-growth (1998) (4)
- Effects of Growth Temperature and Postgrowth Annealing on Inhomogeneous Luminescence Characteristics of Green-Emitting InGaN Films (2010) (4)
- Investigations of Chemical Vapor Deposition of GaN Using Synchrotron Radiation (2000) (4)
- Patterned III‐Nitrides on Porous GaN: Extending Elastic Relaxation from the Nano‐ to the Micrometer Scale (2021) (4)
- Improved high power thick-GaN-capped AlGaN/GaN HEMTs without surface passivation (2004) (4)
- High current gain GaN bipolar junction transistors with regrown emitters (2000) (4)
- Omnidirectional light extraction in GaN LEDs using an Archimedean tiling photonic crystal (2006) (4)
- Electrical Characteristics of Nonpolar InGaN-Based Light-Emitting Diodes Evaluated at Low Temperature (2007) (4)
- An exploratory study of acidic ammonothermal growth in a TZM autoclave at high temperatures (2018) (4)
- Epitaxial AlGaAs/AlAs distributed Bragg reflectors for green (550 nm) lightwaves (1992) (4)
- Analysis of InP etched surfaces using metalorganic chemical vapor deposition regrown quantum well structures (1995) (4)
- Cerium Doped Garnet Phosphors for Application in White GaN-based LEDs (2001) (4)
- High performance InP JFETs grown by MOCVD using tertiarybutylphosphine (1994) (4)
- Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition (2020) (4)
- Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes. (2018) (4)
- 45 nm wavelength tuning range of an InP/InGaAsP photonic integrated tunable receiver (1996) (4)
- Low Drive Voltage, Negative Chirp 40 Gb/s EA-Modulator/Widely-Tunable Laser Transmitter, Using Quantum-Well-Intermixing (2006) (4)
- Optimization of Annealing Process for Improved InGaN Solar Cell Performance (2013) (4)
- Optical and electrical characterizations of micro-LEDs grown on lower defect density epitaxial layers (2021) (3)
- Progress of InGaN-Based Red Micro-Light Emitting Diodes (2022) (3)
- Toward heteroepitaxially grown semipolar GaN laser diodes under electrically injected continuous-wave mode: From materials to lasers (2020) (3)
- Recent progress in InGaN-based laser diodes fabricated on nonpolar/semipolar substrates (2011) (3)
- InGaN/GaN laser diodes on semipolar (10) bulk GaN substrates (2008) (3)
- Nonpolar GaN-Based Superluminescent Diode with 2.5 GHz Modulation Bandwidth (2018) (3)
- Observation of near field modal emission in InGaN multi-quantum well laser diodes by near field scanning optical microscopy (1998) (3)
- Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition (2018) (3)
- High gain semiconductor optical amplifier — Laser diode at visible wavelength (2016) (3)
- Characteristics of sampled grating DBR lasers with integrated semiconductor optical amplifiers (2000) (3)
- Absolute internal quantum efficiency of an InGaN/GaN quantum well (1996) (3)
- Improving backside (N-face) GaN substrate roughening by pre-annealing for GaN-on-GaN LED (2021) (3)
- X‐ray microdiffraction imaging investigations of wing tilt in epitaxially overgrown GaN (2006) (3)
- MOCVD growth and properties of thin Al/sub x/Ga/sub 1-x/N layers on GaN (1998) (3)
- Substrate Surface Treatments and “Controlled Contamination” in GaN / Sapphire MOCVD (1997) (3)
- An Efficient, Thermally Stable Cerium‐Based Silicate Phosphor for Solid State White Lighting. (2013) (3)
- Demonstration of III-Nitride Red LEDs on Si Substrates via Strain-Relaxed Template by InGaN Decomposition Layer (2022) (3)
- Characterization of crystallographic properties and defects via X‐ray microdiffraction in GaN (0001) layers (2006) (3)
- Effects of activation method and temperature to III-nitride micro-light-emitting diodes with tunnel junction contacts grown by metalorganic chemical vapor deposition (2021) (3)
- Light emitting diodes: materials growth and properties (1993) (3)
- Hybrid III-Nitride Tunnel Junctions for Low Excess Voltage Blue LEDs and UVC LEDs (2019) (3)
- 40 nm tuning range of a photonic integrated tunable InP/InGaAsP receiver with improved side-lobe suppression ratios (1997) (3)
- Comparing ion damage in GaAs and InP (1997) (3)
- Effect of indium on the conductivity of poly‐crystalline GaN grown on high purity fused silica (2012) (3)
- Highly Conductive n-Al0.65Ga0.35N Grown by MOCVD Using Low V/III Ratio (2021) (3)
- Homoepitaxial growth and characterization of ZnO(0001) thin films grown by metalorganic chemical vapor epitaxy (2009) (3)
- Progress in gallium nitride-based bipolar transistors (2001) (3)
- 47.1: Invited Paper: Progress in Green and Blue Laser Diodes and Their Application in Pico Projection Systems (2011) (3)
- InP-based multiple quantum well structures grown with tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP): Effects of growth interruptions on structural and optical properties (1996) (3)
- Solid State Lighting and Displays (2001) (3)
- Blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy (2003) (3)
- Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition (2016) (3)
- Realization of III-Nitride c-Plane microLEDs Emitting from 470 to 645 nm on Semi-Relaxed Substrates Enabled by V-Defect-Free Base Layers (2021) (3)
- Semipolar III-nitride laser diodes for solid-state lighting (2019) (3)
- High performance AlAs/GaXIn1-xAs resonant tunneling diodes by metalorganic chemical vapor deposition (1995) (3)
- Novel devices based on the combination of nitride and II–VI materials (2006) (3)
- Wafer-fused n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor with uid-GaAs Base-Collector Setback (2003) (3)
- Study of surface roughness of lifted-off epitaxial lateral overgrown GaN layers for the n-DBR mirror of a III-nitride vertical-cavity surface emitting laser (2021) (3)
- Widely tunable integrated filter/receiver with apodized grating-assisted codirectional coupler (1997) (3)
- Polarization field crossover in semi‐polar InGaN/GaN single quantum wells (2010) (3)
- Blue semipolar InGaN microcavity light-emitting diode with varying cavity lengths from 113 to 290 nm (2021) (3)
- Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer (2022) (3)
- High efficiency blue InGaN microcavity light-emitting diode with a 205 nm ultra-short cavity (2021) (3)
- Chapter 5. Assessing the Need for High Impact Technology Research, Development & Deployment for Mitigating Climate Change (2016) (3)
- Investigation of Sidewall Recombination in GaN Using a Quantum Well Probe (2000) (3)
- Enhanced external quantum efficiency of III-nitride micro-light-emitting diodes using vertical and transparent package (2021) (3)
- Distributed Feedback Laser Diodes Employing Embedded Dielectric Gratings Located above the Active Region (2000) (3)
- Quasiordered, subwavelength TiO2 hole arrays with tunable, omnidirectional color response (2020) (3)
- GaInAs/GaInP Double Barrier Structures: Growth and Application in Tunneling Diodes (1994) (3)
- Growth of In-doped ZnO films by metalorganic chemical vapor deposition on GaN(0001) templates (2009) (3)
- High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum (2017) (3)
- Impact of Gate-Aperture Overlap on the Channel-Pinch Off in InGaAs/InGaN-Based Bonded Aperture Vertical Electron Transistor (2013) (3)
- Uni-traveling-carrier balanced photodiode with tunable MMI coupler for optimization of source laser RIN suppression (2009) (3)
- An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface (2020) (3)
- Effect of the Confinement Layer Design on the Luminescence of InGaN/GaN Single Quantum Wells (1999) (3)
- Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors (2009) (3)
- Sampled grating DBR lasers with integrated wavelength monitoring (1998) (3)
- Ion damage propagation in dry-etched InP-based structures (1996) (3)
- Improved quality (11(2)over-bar0) a-plane GaN with sidewall lateral epitaxial overgrowth (2006) (2)
- INP-BASED DEVICES AND THEIR APPLICATIONS FOR MERGED FET-HBT TECHNOLOGIES (1996) (2)
- Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures (2020) (2)
- Nonpolar gallium nitride laser diodes are the next new blue (2007) (2)
- Formation of InGaAs fins by atomic layer epitaxy on InP sidewalls (2014) (2)
- Pointed Cone Shaped Light-Emitting Diodes Based on ZnO/GaN Wafer Bonding (2008) (2)
- Gallium nitride based light emitting diodes (LEDs) for energy efficient lighting and displays (2013) (2)
- Electrical characterization of low defect density nonpolar (11 ¯ 2 0) a -plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO) (2008) (2)
- Spontaneous formation of {1 1̄ 0 1} InGaN quantum wells on a (1 1 2̄ 2) GaN template and their electroluminescence characteristics (2009) (2)
- Recombination Dynamics of Localized Excitons in Cubic Phase InxGa1—xN/GaN Multiple Quantum Wells on 3C-SiC/Si (001) (2002) (2)
- Ultrafast carrier relaxation in group-III nitride multiple quantum wells (2004) (2)
- Customized Filter Cube in Fluorescence Microscope Measurements of InGaN/GaN Quantum-Well Characterization (2009) (2)
- Si doping effect on strain reduction in compressively strained Al 0.49 Ga 0.51 N thin films (2003) (2)
- Erratum: “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate” [Appl. Phys. Lett.98, 191903 (2011)] (2011) (2)
- Microdiffraction imaging of dislocation densities in microstructured samples (2008) (2)
- HBT on LEO GaN (2000) (2)
- Time-resolved photoluminescence studies of GaN, InGaN, and AlGaN grown by metalorganic chemical vapor deposition (1999) (2)
- A Comparison of the Optical Characteristics of AlGaN, GaN, and InGaN Thin Films (1999) (2)
- Metalorganic chemical vapor deposition and infrared photoluminescence of semipolar (202¯1¯) InN quantum dashes (2021) (2)
- AlGaN/GaN solar-blind ultraviolet photodiodes on SiC substrate (2000) (2)
- A novel hybrid pulsed laser deposition/metalorganic vapour deposition method to form rare-earth activated GaN (2008) (2)
- High conductivity n-Al06Ga04N by ammonia-assisted molecular beam epitaxy for buried tunnel junctions in UV emitters (2021) (2)
- Propagation studies of THz nano acoustic waves in GaN (2004) (2)
- Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0.82In0.18N Grown on GaN (2011) (2)
- GALLIUM NITRIDE MATERIALS TECHNOLOGY (2)
- Acceptor traps as the source of holes in p-type N-polar GaN/(AlN/AlGaN) superlattices (2022) (2)
- Improved composition and thickness control of III-V epitaxy in a metalorganic chemical vapor deposition process (1995) (2)
- Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding (2005) (2)
- Nano-porous GaN cladding and scattering loss in edge emitting laser diodes. (2021) (2)
- Orientation-mismatched wafer bonding for polarization control of 1 . 3 μ m-wavelength vertical cavity surface emitting lasers ( VCSEL ) (2002) (2)
- Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition (2003) (2)
- Study of temperature effects on loss mechanisms in 1 . 55 μ m laser diodes with In 0 . 81 Ga 0 . 19 P electron stopper layer (2)
- Analysis of Leakage Currents in AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs) (2003) (2)
- Spatially direct and indirect transitions in InGaN/GaN structures with coupled quantum wells (2005) (2)
- Low-temperature Pd direct bonding and electrical transport across InP-Pd-GaAs interfaces (1994) (2)
- Transmission Geometry Laser Lighting with a Compact Emitter (2020) (2)
- InP/InGaAsP grating-assisted codirectional coupler tunable receiver with a 30 nm wavelength tuning range (1996) (2)
- High doping incorporation on (311)B InP/InGaAs by metalorganic chemical vapor deposition and its application to tunnel junction fabrication (2004) (2)
- New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substrate (2021) (2)
- Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition (2022) (2)
- Gallium nitride based electronics and opto-electronics (1998) (2)
- Lift-off of semipolar blue and green III-nitride LEDs grown on free-standing GaN (2020) (2)
- GaN-Based Optical Devices (2016) (2)
- Nano-ultrasonics: science and technology (2004) (2)
- The Growth of AIGaAs/GaAs Heterostructures By Atomic Layer Epitaxy (1987) (2)
- Compressively strained 1.55-um InxGa1-xAsyP1-y/InP quantum well laser diodes grown by MOCVD with tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) (1994) (2)
- High efficiency semipolar III-nitride lasers for solid state lighting (2016) (2)
- Optoelectronic properties of doped hydrothermal ZnO thin films (2017) (2)
- Long-Wavelength Vertical-Cavity Surface-Emitting Laser Diodes (1996) (2)
- Nitride semiconductors. Materials Research Society symposium proceedings Volume 482 (1998) (2)
- Metalorganic chemical vapor deposition of InN quantum dots and nanostructures (2021) (2)
- Tunable buried ridge stripe sampled grating distributed Bragg reflector lasers utilizing quantum well intermixing (2001) (2)
- Ion implantation for unalloyed ohmic contacts to AlGaN/GaN HEMTs (2004) (2)
- Demonstration of C-Plane InGaN-Based Blue Laser Diodes Grown on a Strain-Relaxed Template (2022) (2)
- Semipolar group III-nitride distributed-feedback blue laser diode with Indium tin oxide surface grating (2020) (2)
- InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs (2013) (2)
- Cleaved Facets in Gan by Wafer Fusion of Gan to Inp (1996) (2)
- M ‐plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth on c ‐plane patterned templates (2008) (2)
- Highly efficient InGaN-based LED with pre-roughening backside of GaN substrate (2020) (2)
- InP islands on GaAs substrates: MOCVD growth of quantum-sized structures (1994) (2)
- Unidirectional Luminescence from Quantum Well Metasurfaces (2019) (2)
- Demonstration of electrically pumped nitride distributed feedback lasers employing dielectric gratings (1999) (2)
- Stimulated Emission and Gain Measurements from InGaN/GaN Heterostructures (1996) (2)
- High contrast InP/InGaAsP grating MOCVD regrowth using TBA and TBP (2004) (2)
- Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes (2017) (2)
- Field emission from selectively regrown GaN pyramids (1996) (2)
- Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine (2021) (2)
- High efficiency of III-nitride and AlGaInP micro-light-emitting diodes using atomic layer deposition (2021) (2)
- Wide Tunability and Large Mode-Suppression in a Multi-Section Semiconductor Laser Using Sampled Gratings (1992) (2)
- Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting (2012) (2)
- Effect of n‐AlGaN cleave assistance layers on the morphology of c ‐plane cleaved facets for m ‐plane InGaN/GaN laser diodes (2011) (2)
- Limiting factors of GaN-on-GaN LED (2021) (2)
- Erratum: “Temperature dependence of exciton-surface plasmon polariton coupling in Ag, Au, and Al films on InxGa1−xN/GaN quantum wells studied with time-resolved cathodoluminescence” [J. Appl. Phys. 117, 043105 (2015)] (2015) (1)
- Suppression of Anomalously Large Threshold Voltage in Wafer-Bonded Vertical Transistors by Enhancing Critical Field to Impact Ionization (2018) (1)
- Semipolar (202̅1) III-Nitride P-Down LEDs with in situ anneal to reduce the Mg memory effect (2017) (1)
- Temperature‐dependent high‐frequency performance of deep submicron AlGaN/GaN HEMTs (2008) (1)
- Photonic integrated circuits based on sampled-grating distributed-Bragg-reflector lasers (2003) (1)
- Optical properties of AlN/sapphire grown at high and low temperatures studied by variable angle spectroscopic ellipsometry and micro Raman scattering (2000) (1)
- Power spectral density analysis of strain-induced InP islands on GaInP/GaAs(100) (1996) (1)
- Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate (2015) (1)
- Energy Savings Potential of GaN LEDs for Energy Efficient Lighting and Future Research Directions (2013) (1)
- N-face GaN substrate roughening for improved performance GaN-on-GaN LED (2021) (1)
- Indium tin oxide as a transparent contact to p-GaN (1999) (1)
- Low resistance Ti/Al/Au ohmic backside contacts to nonpolar m-plane n-GaN (2010) (1)
- Nonlinear optical spectroscopy of band tail states in highly excited InGaN (1999) (1)
- Strained-layer heteroepitaxy to fabricate self-assembled semiconductor islands (2000) (1)
- High Performance Green LEDs for Solid State Lighting (2020) (1)
- Ga/sub 0.51/In/sub 0.49/P channel MESFET (1993) (1)
- Reduction of bound-state and nonradiative defect densities in nonpolar (11&2macr;0) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique (2005) (1)
- 0.2/spl mu/m gatelength, non-alloyed AlInAs/GaInAs JHEMTs with extrinsic ft=62 GHz (1994) (1)
- Deep levels in n-type Schottky and p+-n homojunction GaN diodes (2000) (1)
- Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN (2012) (1)
- Analysis of InGaN/GaN VCSELs (2005) (1)
- Temperature‐dependent Radiative Lifetimes of Excitons in Non‐Polar GaN/AlGaN Quantum Wells (2007) (1)
- Use of post-growth control of the quantum-well band edge for optimized widely-tunable laser-x devices (2002) (1)
- Transient wavefunction analysis of a phononic bandgap nano-crystal (2006) (1)
- On the interface resistance of regrown GaInAs on InP (1995) (1)
- Growth by MOCVD and photoluminescence of semipolar (202¯1¯) InN quantum dashes (2021) (1)
- A semipolar (10- 1 - 3 ) InGaN/GaN green light emitting diode (2005) (1)
- 1.55 micron in-plane lasers with p-Al/sub 0.7/Ga/sub 0.3/As cladding layers (1997) (1)
- Nitride-based lasers: advances in cavity design (2000) (1)
- Optical Gain and Absorption of 420 nm InGaN-based Laser Diodes Grown on m-Plane GaN Substrate (2014) (1)
- Properties of ZnO(0001) layers grown by metalorganic chemical vapor deposition on GaN(0001) templates (2008) (1)
- Hybrid MOCVD/MBE GaN tunnel junction LEDs with greater than 70% wall plug efficiency (2016) (1)
- High efficiency LEDs by photonic crystal-assisted extraction (2006) (1)
- Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy (2013) (1)
- Recent results and latest views on microcavities LED (2004) (1)
- Nonpolar GaN-based vertical-cavity surface-emitting lasers (2016) (1)
- Group-III nitride nanoparticles - synthesis and photoluminescence studies (2003) (1)
- Growth of High Quality (In,Ga,Al)N/GaN Heterostructure Materials and Devices by Atmospheric Pressure MOCVD (1996) (1)
- Publisher’s Note: “High optical polarization ratio from semipolar ((202¯1¯)) blue-green InGaN/GaN light-emitting diodes” [Appl. Phys. Lett. 99, 051109 (2011)] (2011) (1)
- Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction control. (2021) (1)
- Spectral Properties of Various Cerium Doped Garnet Phosphors for Application in White GaN-based LEDs (2000) (1)
- InN Quantum Dots by Metalorganic Chemical Vapor Deposition for Optoelectronic Applications (2021) (1)
- Atomic layer epitaxy for the growth of heterostructures (1988) (1)
- Estimation of roughness‐induced scattering losses in III‐nitride laser diodes with a photoelectrochemically etched current aperture (2016) (1)
- Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs (2007) (1)
- Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films (2007) (1)
- Luminescence enhancement of InGaAs/InP surface quantum wells by room‐temperature ion‐gun hydrogenation (1994) (1)
- Vertical defects in heavily Mg‐doped Al0.69Ga0.31N (2007) (1)
- AlGaN Based UV Light Emitting Diodes (2003) (1)
- An InP/InGaAs tunnel junction fabricated on (311)B InP substrate by MOCVD (2004) (1)
- Comparison of spontaneous and stimulated emission from UV-blue photonic materials (1999) (1)
- Influence of Si-Doping on Carrier Localization of Mocvd-Grown InGaN/GaN Multiple Quantum Wells (1998) (1)
- Blue semipolar III-nitride vertical-cavity surface-emitting lasers (2020) (1)
- High performance heterojunction InGaAs/InP JFET grown by MOCVD using tertiarybutylphosphine (TBP) (1992) (1)
- The influence of surfaces and interfaces on coherent phonons in semiconductors (2000) (1)
- Light-Emitting Metasurfaces: A Metalens Approach for Focusing Spontaneous Emission (2020) (1)
- Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure (2000) (1)
- Ammonia molecular beam epitaxy technology for UV light emitters (2015) (1)
- Impact of doped barriers on the recombination coefficients of c-plane InGaN/GaN single quantum well light-emitting diodes (2022) (1)
- Improved Vertical Carrier Transport for Green III-Nitride LEDs Using <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mo stretchy="false">(</mml:mo><mml:mi>In</mml:mi><mml:mo>,</mml:mo><mml:mi>Ga</mml:mi><mml:mo stretchy="false">)</mml:mo><mml:mrow><m (2022) (1)
- Growth Habit Control of Epitaxial Lateral Overgrown InP by MOCVD (2011) (1)
- Size dependent characteristics of AlGaN-based deep ultraviolet micro-light-emitting-diodes (2022) (1)
- Optical crossbar switches on InP (1999) (1)
- Modeling and Control of a Metalorganic Chemical Vapor Deposition Process for III-V Compound Semiconductor Epitaxy (1996) (1)
- Effects of an InGaP electron barrier layer on 1.55 /spl mu/m laser diode performance (1998) (1)
- Identification of Carbon-related Bandgap States in GaN Grown by MOCVD (2003) (1)
- Deep Levels in n-Type Schottky and p + -n Homojunction GaN Diodes (1999) (1)
- "S-Shaped" Temperature Dependent Emission Shift and Carrier Dynamics in MOCVD-Grown InGaN/GaN Multiple Quantum Wells (1998) (1)
- Effect of an (Al,In)N insertion layer on the radiative emission properties of (In,Ga)N/GaN multiple quantum well structures (2007) (1)
- InP islands as self-assembled quantum structures (1995) (1)
- Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction (2006) (1)
- Highly efficient InGaN based LED with pre-roughening backside of GaN substrate (2020) (1)
- Polarization-Enhanced p-AlGaN Superlattice Optimization for GUV LED (2022) (1)
- Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon (2022) (1)
- Enhancement of Luminous Efficacy by Random Patterning of Phosphor Matrix (2008) (1)
- GaN LEDs transferred to copper substrates using laser assisted debonding (1999) (1)
- Recombination dynamics of a 268 nm emission peak in Al0.53In0.11Ga0.36N/Al0.58In0.02Ga0.40N multiple (2006) (1)
- Sampled grating DBR lasers with 22 nm quasi-continuous tuning and monolithically integrated wavelength monitors (1998) (1)
- Monolithic integration of a widely tunable laser and an electro-absorption modulator (1999) (1)
- Direct Pulse Position Modulation of a 410 nm Semipolar GaN Laser Diode for Space Optical Communications (2018) (1)
- Optical Characteristics Of Mocvd-Grown Ingan/Gan Multiple Quantum Wells Investigated By Excitation Energy Dependent Pl And Ple Spectroscopy (1998) (1)
- 336 nm ultraviolet LEDs grown with AlN interlayers for strain reduction (2003) (1)
- High frequency, high breakdown AlInAs/GaInAs junction modulated HEMT's (JHEMT's) with regrown ohmic contacts by MOCVD (1993) (1)
- Wide-bandgap semiconductors for high power, high frequency and high temperature. Materials Research Society symposium proceedings Volume 512 (1997) (1)
- High Efficient GaN Based Micro LEDs for High Re-solution Micro LED Displays (2020) (1)
- Amplification Path Length Dependence Studies of Stimulated Emission from Optically Pumped InGaN/GaN Multiple Quantum Wells (1998) (1)
- A new FET-based integrated circuit technology: the SASSFET (1996) (1)
- High-speed performance of III-nitride 410 nm ridge laser diode on (202̄1̄) plane for visible light communication (2016) (1)
- Polarity Determination for MOCVD Growth of GaN on Si(111) by Convergent Beam Electron Diffraction (1999) (1)
- GaN characterizations using femtosecond optical pulses (1999) (1)
- GaN FEA diode with integrated anode (2002) (1)
- High Voltage GaN HEMTs (1999) (1)
- AlGaN-GaN HEMTs and HBTs for microwave power (2000) (1)
- Electron transport in nitrogen‐polar high electron mobility transistors (2009) (1)
- Compact, 1.55µm Spot-Size Converters for InP Based Photonic Integrated Circuits (1999) (1)
- High Speed Heterojunction JFETs Grown by Non-Hydride MOCVD (1993) (1)
- 35 GHz f/sub max/ InP JFET grown by non-hydride MOCVD (1993) (1)
- Tera-hertz acousto-electric modulation in piezoelectric InGaN/GaN quantum wells using nano acoustic waves (2003) (1)
- Optical Characterization of Double Peak Behavior in 101̄1 Semipolar Light-Emitting Diodes on Miscut m-Plane Sapphire Substrates (2012) (1)
- Generation of coherent acoustic phonons in GaN‐based p‐n junction (2004) (1)
- Observation of giant ambipolar diffusion coefficient in thick InGaN/GaN multiple-quantum-wells (2001) (1)
- Spatial variations of optical properties of semipolar InGaN quantum wells (2015) (1)
- Comparison of optical properties in GaN and InGaN quantum well structures (1999) (0)
- Estimation of roughness‐induced scattering losses in III‐nitride laser diodes with a photoelectrochemically etched current aperture (Phys. Status Solidi A 4∕2016) (2016) (0)
- Control of a III-V epitaxial MOCVD process using ultraviolet absorption concentration monitoring (1999) (0)
- Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation) (2018) (0)
- Picosecond carrier transport and capture for InGaN/GaN single and multiple quantum wells (1999) (0)
- Title : Influence of silicon doping on vacancies and optical properties of AlxGa 1-xN thin films Year : 2007 Version : Final (2015) (0)
- Novel Growth Technologies for In Situ Formation of Semiconductor Quantum Wire Structures (1994) (0)
- Limitations of using a normal-incidence, in-situ, optical growth rate monitor for controlling nitride semiconductor deposition by metalorganic chemical vapor deposition (2003) (0)
- Chip-scale fluorescence sensors (2005) (0)
- Preface: phys. stat. sol. (c) 5/6 (2008) (0)
- Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes. (2023) (0)
- Optical Properties of GaAs Confined in the Pores of MCM-41. (1998) (0)
- Acousto-fluidic assembly of III-nitride micro-light-emitting diodes with magnetic alignment (2021) (0)
- Optical characteristics of AlGaN, GaN, and InGaN thin films: a comparison and temperature dependence (1999) (0)
- Erratum: “Influence of AlN interlayer on the anisotropic electron mobility and the device characteristics of N-polar AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors grown on vicinal substrates” [J. Appl. Phys. 108, 074502 (2010)] (2010) (0)
- High frequency, high breakdown AlInAs/GaInAs junction modulated hemts (JHEMTs) with regrown ohmic contacts by MOCVD (1993) (0)
- Guest Editorial Introduction to the Special Issue on Semiconductor Optoelectronic Materials and Devices (2022) (0)
- Semipolar (2021) blue and green InGaN light-emitting diodes (2012) (0)
- Photonic integrated wavelength-selective receivers based on tapered grating-assisted codirectional couplers (1997) (0)
- Designs for III-nitride edge-emitting laser diodes with tunnel junction contacts for low internal optical absorption loss (2022) (0)
- Engineering of quantum barriers for efficient InGaN quantum well LEDs (2022) (0)
- Critical issues of localization in the development of InGaN/GaN laser diodes (1999) (0)
- Nonlinear piezoelectric effect in InGaN/GaN quantum wells revealed at high pressures (2001) (0)
- Light emission from semiconducting polymers: LEDs, lasers, and white light for the future (1997) (0)
- Anti Reflection (AR) Coating for Indium Gallium Nitride InGaN Solar Cells (2012) (0)
- Gallium Nitride Based Semiconductors for Short Wavelength Optoelectronics (1997) (0)
- Fabrication and characterization of GaN junction field effect transistors (2000) (0)
- Temperature-dependent Radiative Lifetimes of Excitons in Non-polar GaN/AlGaN Quantum Wells (2005) (0)
- Solid state lighting and displays : 31 July-1 August 2001, San Diego, USA (2001) (0)
- Photoluminescence Studies of a Quantum Well Modulated by Faceting on Gaas (110) Surfaces (1993) (0)
- Development of high-performance nonpolar III-nitride light-emitting devices (2013) (0)
- Real-Time Composition And Thickness Control Techniques In A Metalorganic Chemical Vapor Deposition Process (1995) (0)
- Optical Gain and Loss Measurements of Semipolar III-nitride Laser Diodes with ITO/thin-p-GaN Cladding Layers (2018) (0)
- POLARIZATION OF NITRDE LIGHT-EMITTING DODES BY INCREASED INDUM NCORPORATION (2017) (0)
- Demonstration and temperature-dependent analysis of efficient semipolar violet laser diodes heteroepitaxially grown on high-quality low-cost GaN/sapphire substrates (2022) (0)
- Cantilever Epitaxy of AlN using Hydride Vapor Phase Epitaxy (2007) (0)
- Bleaching dynamics of resonantly excited excitons in GaN thin films at room temperature (2002) (0)
- High-Breakdown Voltage AlGaN/GaN HEMTs using trench gates (2006) (0)
- High Efficiency Nonpolar and Semipolar Light Emitting Diodes - Invited (2009) (0)
- ON HIGH QUALITY GROUP-III NITRIDE CRYSTALS MOUNTED ON FOREIGN MATERAL (2017) (0)
- Ultrafast carrier dynamics in GaN bandtail states (1999) (0)
- Transition between the 1 x 1 and ({radical}3 x 2{radical}3)R30{degree} surface structures of GaN in the vapor-phase environment (2000) (0)
- InGaN amber micrometer-scale light-emitting diodes with a peak external quantum efficiency of 5.5% (2023) (0)
- Advances in GaN semiconductors for energy efficient solid state lighting (2012) (0)
- Green Semipolar ($11\overline{2}2$) InGaN Micro-Light-Emitting-Diodes on ($11\overline{2}2$) GaN/Sapphire Template (2019) (0)
- Behavior of quantum well excitons under internal fields of GaN/AlGaN and InGaN/GaN/AlGaN quantum structures (1999) (0)
- Gain spectroscopy in lnGaN/GaN quantum well diodes (1997) (0)
- Continuous-wave operation of long-cavity m-plane GaN-based vertical-cavity surface-emitting lasers with a topside curved mirror and nanoporous GaN DBR (2023) (0)
- Highly Polarized Single-Chip ELED Sources Using Oppositely Strained MQW Emitters and Absorbers (2008) (0)
- Two-photon photoluminescence and current images of bulk GaN and InGaN green LEDs (1999) (0)
- THIN FILMS GROWN BY METALORGANIC (2017) (0)
- UNIVERSITY OF CALIFORNIA Santa Barbara Sputtered Gallium Nitride Tunnel Junction Contacts A Thesis submitted in partial satisfaction of the requirements for the degree Master of Science in Electrical and Computer Engineering by (2019) (0)
- HighPowerandHighExternal Efficiency m-Plane InGaNLEDs (1997) (0)
- Atomic layer epitaxy. Atomic layer epitaxy of 3-5 compound semiconductors by thermal and laser-assisted metalorganic chemical vapor deposition (1989) (0)
- Scanning Tunneling Microscope-Induced Luminescence Studies of Defects in GaN Layers and Heterostructures (1999) (0)
- Exciton dynamics in nonpolar (110) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth (2006) (0)
- InP/InGaAsP photonic integrated broadly tunable receivers based on grating-assisted codirectional coupler optical filter (1996) (0)
- Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges (2023) (0)
- Similarities in the optical properties of hexagonal and cubic InGaN quantum wells (2001) (0)
- Flow modulation epitaxy of GaxIn1-xAs/AlAs heterostructures on InP for resonant tunneling diodes (1994) (0)
- Atomic Layer Epitaxy of III-V Compound Semiconductors by Thermal and Laser-Assisted Metalorganic Chemical Vapor Deposition (1989) (0)
- Semipolar (2021) laser diodes (λ=505nm) with wavelength-stable InGaN/GaN quantum wells (2012) (0)
- InGaAsP/InP scaleable, photonic crossconnects using optically amplified suppressed modal interference switch arrays (1998) (0)
- Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED (2021) (0)
- Variation of structural and optical properties across an AlGaN/GaN HEMT structure directly imaged by cathodoluminescence microscopy (2003) (0)
- Time-resolved optical studies of InGaN LED structures grown on semipolar and nonpolar bulk GaN substrates (2008) (0)
- GaN based high brightness LEDs and UV LEDs (2003) (0)
- Extended tuning range integrated receivers with grating-assisted codirectional coupler optical filters (1997) (0)
- Ultrafast carrier dynamics in InGaN MQW laser diode (2003) (0)
- Computational design and optimization of nanostructured AlN deep-UV grating reflectors. (2022) (0)
- Pressure-assisted combustion synthesis of red-emitting Srln 204: Eu3+ phosphor powders for applications in solid state white lamps (2008) (0)
- Development of c-plane thin-film flip-chip LEDs fabricated by photoelectrochemical (PEC) liftoff (2016) (0)
- Morphological improvement and elimination of V-pits from long-wavelength all-InGaN based μLEDs grown by MOCVD on compliant substrates (2021) (0)
- Barrier and well width study of InGaN/GaN multiple quantum wells (1997) (0)
- Temperature-dependent High-Frequency Performance of Deep Submicron Ion-Implanted AlGaN/GaN HEMTs (2008) (0)
- Substrate engineering of 1.55 /spl mu/m lasers (1997) (0)
- N-polar GaN Electronics (2007) (0)
- Publisher’s Note: “Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing” [Appl. Phys. Lett. 85, 5254 (2004)] (2005) (0)
- MOCVD Growth and Properties of Thin Al,Ga,-,N Layers on GaN (1999) (0)
- Metalorganic chemical vapor deposition of InN quantum dots and nanostructures (2021) (0)
- Demonstration of true green ITO clad semipolar InGaN/GaN laser diodes (2013) (0)
- Growth modification via indium surfactant for InGaN/GaN green LED (2023) (0)
- Ultrafast electron dynamics and intervalley scattering in GaN (1998) (0)
- Measurement and minimization of wing tilt in laterally overgrown GaN on a SiO{sub 2} mask. (2000) (0)
- Blue LED with a roughened surface layer with a high refractive index of a high light extraction (2006) (0)
- Demonstration and optimization of c-plane InGaN based edge emitting laser diodes grown on strain relaxed template (2023) (0)
- Huge coherent acoustic phonon oscillation induced by piezoelectric field in InGaN/GaN multiple-quantum-wells (1999) (0)
- Experimental demonstration of a wafer-bonded heterostructure based unipolar transistor with In0.53Ga0.47as channel and III-N drain (2012) (0)
- Long wavelength GaN blue laser (400-490nm) development (2000) (0)
- A violet III-nitride vertical-cavity surface-emitting laser with a MOCVD-grown tunnel junction contact (2018) (0)
- High electron mobility 2DEG in AlGaN/GaN structures (1999) (0)
- IIIA-9 High Frequency, High Breakdown Al- InAs /GaInAs Junction Modulated HEMT's (JHEMT's) with Regrown Ohmic Contacts by (1993) (0)
- Universal behavior of the pressure coefficient of the light absorption and emission in InGaN structures (2000) (0)
- AlGaN/GaN HEMTswithanInGaN-based back-barrier (2005) (0)
- Defect reduction in (cid:132) 112¯0 (cid:133) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy (2003) (0)
- Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier (2008) (0)
- Energy Efficient GaN Lighting (2017) (0)
- High quality long wavelength lasers grown by atmospheric pressure MOCVD with liquid group V sources (1993) (0)
- High power novel heterojunction JFETs (HJFETs) grown by MOCVD (1993) (0)
- Demonstration of a relaxed waveguide semipolar InGaN/GaN laser diode (2012) (0)
- On tuning efficiency of sampled grating DBR lasers using quatnum well intermixing (2002) (0)
- Anomalous pressure dependence of emission in Si-doped InGaN/GaN quantum wells (2000) (0)
- Damage from stimulated emission in optically pumped GaInN multiple quantum wells (1998) (0)
- Study of Stimulated Emission in InGaN/GaN Multi-Quantum Wells in the Temperature Range of 175 k to 575 k (1998) (0)
- Semipolar AlN on bulk GaN for UV-C diode lasers (2011) (0)
- Invited MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors (0)
- Measurement of internal loss, injection efficiency, and gain for continuous-wave semipolar (202̄1̄) III-nitride laser diodes (2016) (0)
- Technical program (2020) (0)
- Structure of V-defects in long wavelength GaN-based light emitting diodes (2023) (0)
- Thermal annealing of InGaN/GaN strained-layer quantum well (1999) (0)
- Carrier loss analysis for ultraviolet light-emitting diodes (2004) (0)
- Observation of coherent acoustic phonon oscillations in bulk gallium nitride (2001) (0)
- Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition (2023) (0)
- Mapping piezoelectric field distribution in InGaN/GaN multiple-quantum-wells by scanning second-harmonic-generation microscopy (2000) (0)
- Optical and thermal properties of In12Ga88N/GaN solar cells (2009) (0)
- Integrated non-III-nitride/III-nitride tandem solar cell (2011) (0)
- Controlling Spontaneous Emission with Nanohole-Based Phased-Array Metasurfaces (2021) (0)
- High external quantum efficiency III-nitride micro-light-emitting diodes (2021) (0)
- Pressure Studies in InGaN/GaN Quantum Wells (2001) (0)
- Gain spectroscopy on InGaN quantum well diodes (1997) (0)
- Femtosecond carrier dynamics in GaN (2001) (0)
- Single-frequency DFB laser diodes at visible wavelengths grown with low temperature remote plasma chemical vapor deposition p-AlGaN (2023) (0)
- Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation (2006) (0)
- YOU MAY BE INTERESTED IN Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in Nand Ga-face AlGaN / GaN heterostructures (2008) (0)
- Semipolar {202̅1} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing (2021) (0)
- Role of below bandgap states in the radiative emission of InGaN/GaN quantum well structures (1999) (0)
- Transition between the 1 x 1 and ( fix 2 ~ ) R 30 ° surface structures of GaN in the vapor : phase environment (2000) (0)
- Ultrafast inter-subband hole relaxation in an InGaN Multiple-Quantum-Well Laser Diodeantum-Well (MQW) Laser Diode (2003) (0)
- MOCVD Growth of Group-III Nitrides for High Quality Photonic Devices (1997) (0)
- PIEZOELETRIC-FIELD MODIFIED 2D CARRIER DIFFUSION BEHAVIOR IN InGaN/GaN MULTIPLE-QUANTUM-WELLS (2001) (0)
- COHERENT CONTROL OF SEMICONDUCTOR PHONON OSCILLATIONS (2001) (0)
- Enhancing light extraction from III-nitride devices using moth-eye nanostructures formed by colloidal lithography (2016) (0)
- Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junction (2019) (0)
- $m$-Plane GaN Growth on ``Double Miscut'' Bulk Substrates for Blue Laser Diode Applications (2015) (0)
- Optoelectronic devices (2011) (0)
- Tuning piezoelectric fields in InGaN/GaN quantum wells (2001) (0)
- Comparison between standing transparent mirrorless packaging and planar-mounted packaging for GaN-on-GaN LEDs (2020) (0)
- Properties of quantum well excitons in GaN/AlGaN and InGaN/GaN/AlGaN UV, blue, green, and amber light emitting diode structures (1999) (0)
- Nondegenerate Optical Pump-Probe Spectroscopy of Highly Excited Group III Nitrides (1999) (0)
- Influence of Growth Parameters on the Deep Level Spectrum in MBE-Grown n-GaN (2003) (0)
- Controlling electronic properties of wafer-bonded interfaces among dissimilar materials: A path to developing novel wafer-bonded devices (2013) (0)
- Instrumentation for Advanced Feedback Control of a Metalorganic Chemical Vapor Deposition Facility. (1996) (0)
- Tunnel junction devices with monolithic optically pumped and electrically injected InGaN quantum wells for polarized white light emission (2016) (0)
- IMIRIS Internet N i t r i de of Semiconductor Research A GaN/4H-SiC Heterojunction Bipolar Transistor with Operation up to 300°C Novel Approach to Simulation of Group-Ill Nitrides Growth by MOVPE (2013) (0)
- 3D four- three- two-photon and multi-harmonic microscopy of lateral-over-grown GaN (2003) (0)
- Demonstration of yellow (568 nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells (2022) (0)
- 50 nm AlGaN/GaN HEMT Technology for mm-wave Applications (2006) (0)
- Long-wavelength vertical-cavity lasers with GaAs mirrors (2017) (0)
- III-nitride strain relaxation enabled by porous GaN for optoelectronic applications (2021) (0)
- Si doping effects on the electrical and structural properties of high Al composition AlxGa1−xN films grown by MOCVD (2003) (0)
- Measurement of crystallographic tilt in the lateral epitaxial overgrowth of GaN (1999) (0)
- Pulsed operation of (Al,Ga,In)N blue laser diodes (1998) (0)
- Green edge emitting lasers with porous GaN cladding. (2022) (0)
- Growth and characterization of InGaN/GaN double heterostructure LEDs grown by MOCVD (1995) (0)
- GaN lateral epitaxial overgrowth (LEO) on silicon and sapphire substrates (1999) (0)
- INFLUENCE OF BARRIER DOPING AND BARRIER COMPOSITION ON OPTICAL GAIN IN (IN, GA)N MQWS (1999) (0)
- Epitaxial Growth and Fabrication of Highly Strained Heterostructures (2000) (0)
- Thermionic emission dominated carrier dynamics in InGaN/GaN multiple quantum-wells (2000) (0)
- Coherent control of acoustic phonon oscillations in InGaN/GaN multiple-quantum-wells (2000) (0)
- ZnO cone-shaped blue light emitting diodes (2008) (0)
- Comparison of the Morphological and Optical Characteristics of InP Islands on GalnP/GaAs (311)A and (100) (1996) (0)
- Nanoscale Characterization of InP Islands on InGaP(001) (1995) (0)
- Efficient and ColorTunable Oxyfluoride Solid Solution Phosphors for SolidState White Lighting (2011) (0)
- Comparative study of near-threshold stimulated emission mechanisms in GaN epilayers and InGaN/GaN multiquantum wells (1999) (0)
- Technique de conditionnement pour la fabrication de diodes electroluminescentes polarisees (2006) (0)
- Generation, detection, and propagation of nano-acoustic waves in piezoelectric semiconductors (Invited Paper) (2005) (0)
- Multimode Scanning Near-Field Photoluminescence Spectroscopy of InGaN Quantum Wells (2018) (0)
- Triangular pattern formation on silicon through self-organization of gan nanoparticles (2007) (0)
- Characterization of (Al,Ga,In)N grown using lateral epitaxial overgrowth. Annual report (1998) (0)
- Characterization and Discrimination of AlGaN‐ and GaN‐related Deep Levels in AlGaN/GaN Heterostructures (2007) (0)
- 1.5-Gbit/s Filter-Free Optical Communication Link Based on Wavelength-Selective Semipolar (2021) InGaN/GaN Micro-Photodetector (2020) (0)
- MOCVD growth of InGaN multiple quantum well LEDs and laser diodes (1998) (0)
- Ballistic electron emission microscopy (BEEM) studies of GaInP/GaAs heterostructures (1995) (0)
- Advances in characterization of III-nitrides by secondary ion mass spectrometry (2004) (0)
- Designing Highly Directional Luminescent Phased-Array Metasurfaces with Reciprocity-Based Simulations (2022) (0)
- Growth of InGaN quantum wells and InGaN/GaN quantum well LEDs by MOCVD (1996) (0)
- Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces (2020) (0)
- 384 nm AlGaN diode lasers on relaxed semipolar buffers (2012) (0)
- A method of joining slices of (Al, In, Ga) N and Zn (S, Se) for optoelectronic applications (2005) (0)
- Blue InGaN MQW laser diodes on sapphire (1998) (0)
- Recent progress in AlGaN UV-C LEDs grown on SiC (2019) (0)
- Optical characterization of InGaN/GaN quantum well structures with Si-doped barriers (1999) (0)
- Comparison Study of Structural and Optical Properties of InxGa1-xN/GaN Quantum Wells with Different in Compositions (1999) (0)
- 1 AMPLIFICATION PATH LENGTH DEPENDENCE STUDIES OF STIMULATED EMISSION FROM OPTICALLY PUMPED InGaN / GaN MULTIPLE QUANTUM WELLS (1998) (0)
- Increased Polarization Ratio on Semipolar (1122) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition (2008) (0)
- Monolithic InP Optical Crossconnects: 4 x 4 and Beyond (1999) (0)
- Characterization of InGaN/GaN lasing structures for high temperature device applications (1998) (0)
- N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization (2023) (0)
- Fabrication and Characterization of GaN Junctionfield Effect Transistors (1999) (0)
- Polarity determination for MOCVD growth of GaN on Si(111) by convergent beam electron diffraction[Metal Organic Chemical Vapor Deposition] (2000) (0)
- Selectively regrown ohmic contacts for high frequency and low noise FETs (1995) (0)
- Ultrafast Hole Capture Dynamics in Mg-doped GaN Thin Films (2002) (0)
- Optoelectronic Devices Grown on Nonpolar and Semipolar Free-Standing GaN Substrates (2011) (0)
- Designing optically pumped InGaN quantum wells with long wavelength emission for a phosphor-free device with polarized white-light emission (2016) (0)
- Comparative Study of Emission from Highly Excited (In, Al) GaN Thin Films and Heterostructures (1999) (0)
- Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers (2023) (0)
- Progress in III-Nitride Tunnel Junctions for Optoelectronic Devices (2022) (0)
- Luminescent Metalenses for Focusing Spontaneous Emission (2021) (0)
- Towards III-nitride photonic IC: a new platform for smart lighting and visible light communication (2017) (0)
- GaN High-Power Lasers for solid-state lighting (2019) (0)
- Damage-free substrate removal technique: wet undercut etching of semipolar 202¯1 laser structures by incorporation of un/relaxed sacrificial layer single quantum well (2021) (0)
- Nonpolar Nitride Semiconductor Optoelectronic Devices: A Disruptive Technology for Next Generation Army Applications (2008) (0)
- MOCVD growth and fabrication of group-Ill nitrides for high-efficiency MQW LEDs (1997) (0)
- Coupling of terahertz radiation with whispering-gallery-mode microdisk lasers (1994) (0)
- Large Schottky barriers and memory operation for Ni/p-GaN contacts (1999) (0)
- Measurements of the Refractive Indices of MOCVD and HVPE Grown AlGAN Films Using Prism-Coupling Techniques Correlated With Spectroscopic Reflection/Transmission Analysis | NIST (2002) (0)
- Field-induced guide/antiguide modulators on InGaAsP/InP (1994) (0)
- Chapter 6 – Strained-layer heteroepitaxy to fabricate self-assembled semiconductor islands (2002) (0)
- MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors (1999) (0)
- High Performance InGaN-Based Solar Cells (2012) (0)
- High Power and High External Efficiency m-Plane InGaN LEDs (2007) (0)
- Comparison of forward- and brekward-propagrted second harmonic generation images in lateral overgrown GaN (2004) (0)
- III-nitride-based RGB microLEDs for AR/VR applications (2022) (0)
- InGaN Based C-Plane Blue Laser Diodes on Strain Relaxed Template with Reduced Absorption Loss (2022) (0)
This paper list is powered by the following services:
Other Resources About Steven P. DenBaars
What Schools Are Affiliated With Steven P. DenBaars?
Steven P. DenBaars is affiliated with the following schools:
