Susumu Namba
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Susumu Nambachemistry Degrees
Chemistry
#3018
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Physical Chemistry
#380
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#429
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Chemistry
Susumu Namba's Degrees
- PhD Chemistry University of Tokyo
- Masters Chemistry University of Tokyo
- Bachelors Chemistry University of Tokyo
Why Is Susumu Namba Influential?
(Suggest an Edit or Addition)Susumu Namba's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Effective deep ultraviolet photoetching of polymethyl methacrylate by an excimer laser (1982) (271)
- Electro-Optical Effect of Zincblende (1961) (189)
- Ion Implantation in Semiconductors (1975) (151)
- Ion Beam Assisted Deposition of Metal Organic Films Using Focused Ion Beams (1984) (106)
- Nonlocal quantum transport in narrow multibranched electron wave guide of GaAs-AlGaAs (1988) (101)
- Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxy (1986) (87)
- High‐efficiency blazed grating couplers (1976) (75)
- Science and Technology of Mesoscopic Structures (1992) (63)
- Laser enhanced metalorganic chemical vapor deposition crystal growth in GaAs (1985) (59)
- Growth of GaAs by switched laser metalorganic vapor phase epitaxy (1986) (58)
- Atomic‐layer growth of GaAs by modulated‐continuous‐wave laser metal‐organic vapor‐phase epitaxy (1987) (56)
- Lithographic approach for 100 nm fabrication by focused ion beam (1986) (52)
- Maskless ion beam assisted deposition of W and Ta films (1986) (50)
- Liquid metal alloy ion sources for B, Sb, and Si (1981) (49)
- New High Current Low Energy Ion Source (1986) (49)
- Color Sensitization of Zinc Oxide with Cyanine Dyes1 (1965) (47)
- Characteristics of laser metalorganic vapor-phase epitaxy in GaAs (1986) (46)
- A simple optical device for generating square flat-top intensity irradiation from a gaussian laser beam (1983) (45)
- Deep uv submicron lithography by using a pulsed high‐power excimer laser (1982) (45)
- Effects of ion etching on the properties of GaAs. (1978) (43)
- Molecular layer etching of GaAs (1992) (42)
- Cold Jet Infrared Absorption Spectroscopy: The ν3 Band of UF6 (1984) (40)
- A Growth Analysis for Metalorganic Vapor Phase Epitaxy of GaAs (1988) (40)
- Laser Surface Cleaning in Air: Mechanisms and Applications (1994) (39)
- Pressure and irradiation angle dependence of maskless ion beam assisted etching of GaAs and Si (1985) (39)
- Wide-range line-tunable oscillation of an optically pumped NH3 laser (1980) (36)
- Blazed Ion-etched Holographic Gratings (1976) (35)
- Emission Spectra in CdS under High Excitation by Electron Beam (1971) (33)
- Laser-Induced Etching of Mn-Zn Ferrite an Its Application (1989) (33)
- ZnO LASER BY ELECTRON BEAM EXCITATION (1970) (33)
- Effects of Implantation Temperature on Lattice Location of Tellurium Implanted in Gallium Arsenide (1973) (32)
- Nonlocal voltage fluctuations in a quasi ballistic electron waveguide (1989) (32)
- Dynamic behavior of pulsed-laser annealing in ion-implanted silicon: Measurement of the time dependent optical reflectance (1979) (32)
- Carrier dynamics at surface and interface in hydrogenated amorphous silicon observed by the transient grating method (1983) (32)
- Microfabrication in LiNbO3 by ion‐bombardment‐enhanced etching (1978) (32)
- Preparation of High-Tc Superconducting Films by Q-Switched YAG Laser Sputtering (1988) (31)
- A 0–30 keV low‐energy focused ion beam system (1988) (30)
- Picosecond carrier dynamics in optically illuminated glow discharge hydrogenated amorphous silicon (1983) (30)
- Anomalously slow group velocity of upper branch polariton in CuCl (1979) (29)
- Commensurate classical orbits on triangular lattices of anti-dots (1991) (29)
- Determination of diffusion coefficients of an exciton and excitonic molecule in CuCl by picosecond transient grating spectroscopy (1982) (29)
- Laser Induced Local Etching of Gallium Arsenide in Gas Atmosphere (1983) (29)
- The dynamics of photoexcited carriers in microcrystalline silicon (1984) (29)
- Characteristics of maskless ion beam assisted etching of silicon using focused ion beams (1986) (28)
- Output performance of a liquid‐N2‐cooled, para‐H2 Raman laser (1985) (27)
- 100 keV focused ion beam system with a E×B mass filter for maskless ion implantation (1983) (26)
- Microanalysis by Focused MeV Helium Ion Beam (1987) (26)
- Universal magnetoconductance fluctuations in narrow n+ GaAs wires (1987) (25)
- Microfabrication of LiNbO3 by Reactive Ion-Beam Etching (1980) (25)
- Study of interface states in the metal-semiconductor junction using deep level transient spectroscopy (1987) (25)
- Laser-induced thermochemical maskless-etching of III–V compound semiconductors in chloride gas atmosphere (1988) (25)
- Low Energy Focused Ion Beam System and Application to Low Damage Microprocess (1990) (24)
- Characterization of ion beam etching induced defects in GaAs (1988) (24)
- Overshoot of four-terminal magnetoresistance at GaAsAlGaAs narrow wire junctions (1989) (24)
- Induced Defects in GaAs Etched by Low Energy Ions in Electron Beam Excited Plasma (EBEP) System (1989) (24)
- Electrical Conduction in Phthalocyanine Single Crystals (1971) (23)
- Flash Lamp Pumped Tunable Forsterite Laser (1989) (23)
- Lattice Site Location of Cadmium and Tellurium Implanted in Gallium Arsenide (1975) (23)
- Room-temperature operation of a para-H2 rotational Raman laser (1985) (23)
- Blazing of Holographic Grating by Ion Etching Technique (1976) (23)
- Thermal Conductivity of ThO2-UO2 System (1969) (23)
- Observation of Aharonov-Bohm magnetoresistance oscillations in selectively doped GaAs-AlGaAs submicron structures (1987) (23)
- ESR Studies on Defects and Amorphous Phase in Silicon Produced by Ion Implantation (1973) (22)
- Optical Waveguides Fabricated by Ion Implantation (1973) (22)
- Ion beam assisted etching and deposition (1990) (22)
- Formation of High Resistance Region in GaAs by Ga Focused-Ion-Beam Implantation (1985) (22)
- Dynamic behavior of the photodarkening process in As2S3 chalcogenide glass (1981) (21)
- muprobe using focused 1.5 MeV helium ion and proton beams (1988) (21)
- Defects induced by focused ion beam implantation in GaAs (1988) (21)
- Infrared Multiphoton Dissociation of UF6in Supersonic Nozzle Reactor (1989) (21)
- 8 nm Wide Line Fabrication in PMMA on Si Wafers by Electron Beam Exposure (1985) (21)
- Local Temperature Rise during Laser Induced Etching of Gallium Arsenide in SiCl4 Atmosphere (1985) (21)
- Electrochemical properties of ion implanted steel (1979) (20)
- Maskless etching of GaAs and InP using a scanning microplasma (1983) (20)
- Surface processes in laser-atomic layer epitaxy (laser-ALE) of GaAs (1988) (20)
- Electroluminescence of Green Light Region in Doped Anthracene (1971) (20)
- Stress-induced splitting of emission lines from excitonic molecules in CdS and ZnO (1975) (20)
- Dry Etching of Nb and Fabrication of Nb Variable-Thickness-Bridges (1981) (20)
- Fabrication of a Grating Pattern with Submicrometer Dimension in Silicon Crystal by Ion-Bombardment-Enhanced Etching (1980) (20)
- B, As and Si Field Ion Sources (1980) (20)
- Science and technology of microfabrication (1987) (19)
- Focused MeV beam line for microanalysis at Osaka (1988) (19)
- Residual Strain in Single Crystalline Germanium Islands on Insulator (1984) (19)
- Spontaneous and stimulated emission in GaSe under intense excitation (1973) (19)
- 30 nm Line Fabrication on PMMA Resist by Fine Focused Be Ion Beam (1984) (19)
- Study of optically induced degradation of conductivity in hydrogenated amorphous silicon by transient grating method (1983) (19)
- Maskless Dry Etching of Gallium Arsenide with a Submicron Line-Width by Laser Pyrolysis in CCl4 Gas Atmosphere (1984) (19)
- Characteristics of Be-Si-Au Ternary Alloy Liquid Metal Ion Sources (1983) (19)
- Infrared Multiphoton Dissociation of UF6 in Supersonic Nozzle Reactor (2012) (18)
- Surface segregation of indium during growth of InGaAs in chemical beam epitaxy (1990) (18)
- ENHANCED DIFFUSION OF HIGH-TEMPERATURE ION-IMPLANTED ANTIMONY INTO SILICON. (1970) (17)
- Wet-chemical etching of Mn-Zn ferrite by focused Ar+-laser irradiation in H3PO4 (1988) (17)
- Energies of Ions Produced by Laser Irradiation (1966) (17)
- Control of Tc for Niobium by N Ion Implantation (1977) (17)
- The Surface Temperature of Metals Heated with Laser (1965) (17)
- Electroluminescence of anthracene with powdered graphite electrodes and ambient gas effects on the electrodes (1977) (17)
- Laser-induced Chemical Reaction. I. Reaction of Carbon Vapor Produced by a Pulse Ruby Laser (1969) (17)
- Medium energy ion scattering using a toroidal analyzer combined with a microbeam line (1992) (17)
- Ion Beam Etching of InP. II. Reactive Etching with Halogen-Based Source Gases (1983) (17)
- Microbeam line with 1.5 MeV helium ions and protons at Osaka (1988) (17)
- Laser annealing of ohmic contacts on GaAs (1981) (17)
- Ion Beam Etching of InP. I. Ar Ion Beam Etching and Fabrication of Grating for Integrated Optics (1983) (17)
- Reactive Ion-Beam Etching of Silicon Carbide (1981) (17)
- Electrical and Magnetic Properties of Phthalocyanine Iodine Charge Transfer Complex (1971) (17)
- Defect study in GaAs bombarded by low‐energy focused ion beams (1988) (16)
- Ridge waveguides and electro-optical switches in LiNbO 3 fabricated by ion-bombardment-enhanced etching (1979) (16)
- Optical Properties and Lasing of Ti3+ Doped BeAl2O4 (1987) (16)
- Ion beam assisted etching of GaAs by low energy focused ion beam (1991) (16)
- Digital Etching Of GaAs (1997) (16)
- Raman and luminescence processes under the resonant two-photon excitation of an excitonic molecule in CuCl (1978) (16)
- Tomography of Microstructures by Scanning Micro-RBS Probe (1989) (16)
- Implantation temperature for III--V compound semiconductors (1978) (16)
- High-speed data processing for three-dimensional analysis by micro-RBS (1992) (15)
- Electrical Evaluation of Defects Induced in Silicon by High Energy Boron Ion Implantation (1989) (15)
- Fabrication of SiO2 Blazed Holographic Gratings by Reactive Ion-Etching (1980) (15)
- Deep levels induced by high‐energy boron ion implantation into p‐silicon (1992) (15)
- Enhanced Diffusion and Lattice Location of Indium and Gallium Implanted in Silicon (1973) (15)
- Dynamics of “cold polariton” near a bottleneck region in CuCl (1981) (15)
- Shubnikov-de Haas effect of multi-terminal GaAs/AlGaAs quantum wire in non-local geometry (1990) (15)
- Hall Effect Measurements of Zn Implanted GaAs (1974) (15)
- Laser assisted chemical beam epitaxy (1990) (15)
- Diffusion of Defects in Low Temperature Ion Implanted GaAs (1971) (14)
- Quantum size effect on the exciton polariton in GaAs thin films (1989) (14)
- Monolayer growth and direct writing of GaAs by pulsed laser metalorganic vapor phase epitaxy (1988) (14)
- Laser-induced etching of gallium arsenide in a CCl 4 atmosphere: control of carbon deposition (1987) (14)
- Distribution Profiles and Annealing Characteristics of Defects in GaAs Induced by Low-Energy FIB Irradiation (1988) (14)
- Optical Waveguides Fabricated by B Ion Implanted into Fused Quartz (1974) (14)
- Ballistic Electron Transport on Periodic and Quasi-Periodic Triangular Lattices of Scatterers (1991) (14)
- Fabrication of Ballistic Quantum Wires and Their Transport Properties (1989) (14)
- Effects of hydrogen on growth mechanism of GaAs in chemical beam epitaxy (1988) (14)
- Properties of niobium superconducting bridges prepared by electron‐beam lithography and ion implantation (1979) (14)
- Spectroscopic properties of Ti 3 + -doped BeAl 2 O 4 (1989) (14)
- A Stable High-Brightness Electron Gun with Zr/W-tip for Nanometer Lithography. I. Emission Properties in Schottky- and Thermal Field-Emission Regions (1985) (13)
- Single Crystalline Germanium Island on Insulator by Zone Melting Recrystallization (1983) (13)
- Tunable distributed‐feedback dye laser (1975) (13)
- Quantized resistance in in‐plane gated narrow constriction fabricated by wet etching (1990) (13)
- Fabrication of X-ray zone plates with a minimum zone width smaller than 100 nm by electron beam lithography (1985) (13)
- Effects of leakage current on isothermal capacitance transient spectroscopy signals for midgap levels in GaAs (1990) (13)
- 200 kV Mass-Separated Fine Focused Ion Beam Apparatus (1985) (13)
- Ion Beam Assisted Maskless Etching of GaAs by 50 keV Focused Ion Beam (1982) (13)
- Residual Local Strain in Gallium Arsenide Induced by Laser Pyrolytic Etching in CCl4 Atmosphere (1985) (13)
- High‐rate ion etching of GaAs and Si at low ion energy by using an electron beam excited plasma system (1988) (13)
- Studies on injection locking of a TEA-CO 2 laser for stable high-power operation (1984) (13)
- Impurity and boundary roughness scattering in GaAs-AlxGa1−xAs electron waveguides (1991) (13)
- X-ray diffraction gratings for synchrotron radiation spectroscopy: a new fabrication method. (1982) (13)
- Pulse Laser Annealing Effects in Si-Implanted GaAs (1984) (12)
- Heterostructure CdS1−xSex−CdS surface lasers for integrated optics (1975) (12)
- Laser‐irradiation effects on unencapsulated GaAs studied by capacitance spectroscopy (1979) (12)
- A microbeam line for medium-energy ion beams (1990) (12)
- Thin-Film Long-Wire Antenna for 10.6 µm CO2 Laser Radiation (1992) (12)
- Maskless Ion Beam Assisted Etching of Si Using Chlorine Gas (1985) (12)
- Atomic layer manipulation of III–V compounds (1993) (12)
- Laser-induced Chemical Reactions. III. The Decomposition of Metal Salts of Carboxylic Acid and Selective Decomposition (1970) (12)
- Temperature dependence of maskless ion beam assisted etching of InP and Si using focused ion beam (1987) (12)
- Formation of submicron isolation region in GaAs by Ga focused ion beam implantation (1987) (12)
- Annealing and rolling behaviors of concentration profiles of Cr and Cu implanted into mild steel (1978) (12)
- Photo-assisted chemical beam epitaxy of GaAs (1989) (12)
- Stoichiometric Change in Gallium Arsenide after Laser-Induced Thermochemical Etching (1987) (12)
- Passive Mode Locking of a Flashlamp-Pumped Ti:Sapphire Laser (1989) (12)
- Maskless Submicrometer Pattern Formation of Cr Films by Focused Sb Ion Implantation (1984) (12)
- Steady‐state and time‐resolved photoluminescence in microcrystalline silicon (1985) (11)
- Focused ion beam induced fine patterns of organogold films (1987) (11)
- Crystallization of Vacuum‐Evaporated Germanium Films by the Electron‐Beam Zone‐Melting Process (1966) (11)
- Luminescence due to Exciton-Electron and Exciton-Exciton Collisions in GaSe (1976) (11)
- X‐ray lithography by synchrotron radiation of INS–ES (1978) (11)
- Characteristics of W films formed by ion beam assisted deposition (1991) (11)
- Dynamic behavior of mode‐locked Nd : YAG laser annealing in ion‐implanted Si, GaAs, and GaP (1979) (11)
- Effects of ion-implanted atoms upon conduction electron spin resonance (CESR) in a Si : P system (1977) (11)
- Field Ion Sources Using Eutectic Alloys (1980) (11)
- High spectroscopic qualities in blazed ion-etched holographic gratings (1979) (11)
- Enhanced diffusion in ion implanted silicon (1970) (11)
- Thickness Dependence of SiO2 Capping Layers on Recrystallization of Germanium Islands on Insulator (1984) (10)
- Nickel and cobalt silicide formation by broad and focused ion beam implantation (1989) (10)
- Radical Reaction Mechanisms in Infrared Multiphoton Dissociation of UF6 with Scavenger Gases (1989) (10)
- Focused ion beam etching of resist materials (1986) (10)
- Observation of the second Stokes wave in a para-hydrogen Raman laser. (1985) (10)
- High power emission in the 11–14 μm by stimulated rotational Raman scattering in deuterium (1986) (10)
- Measurement of Thermal Diffusivity by Laser Pulse (1967) (10)
- Transfer resistance in GaAs-AlGaAs electron waveguide (1990) (10)
- Paramagnetic Defects Induced in Naphthalene and Anthracene Single Crystals by Neutron Irradiation at Low Temperature (1971) (10)
- Ion species dependence of focused‐ion‐beam lithography (1987) (10)
- Characteristics of Ion Beam Assisted Etching of GaAs Using Focused Ion Beam: Dependence on Gas Pressure (1984) (10)
- Silicon-on-insulator structures by SIMOX and SIMNI procedures studied by Raman scattering and Rutherford backscattering (1989) (10)
- Use of ion-induced X-rays to locate ion-implanted impurities in gallium arsenide (1978) (10)
- Direct observation of polariton velocity in CuCl (1978) (10)
- Graphoepitaxy of Ge Films on SiO2 by Zone Melting Recrystallization (1982) (10)
- Transient Characteristics of Photoluminescence from GaAs/Ga0.7Al0.3As Single Quantum Well Structure (1985) (10)
- Fabrication and resist exposure characteristics of 50 keV nanometer e‐beam lithography system (1985) (10)
- X‐ray zone plates fabricated using electron beam lithography and reactive ion etching (1985) (10)
- Laser oscillation in simple corrugated optical waveguide (1974) (10)
- Reaction Temperature of HgS (1970) (10)
- Pressure dependence of laser oscillation and superfluorescent emission from an optically pumped CF4 laser (1984) (9)
- Isotopically Selective Multiphoton Dissociation of UF6 in Static Gas Cell at -35°C (1986) (9)
- Fabrication of 80 nm-Wide Lines in FPM Resist by H+ Beam Exposure (1981) (9)
- Luminescence during Eu-implantation into calcium fluoride (1988) (9)
- Recrystallization of AlNx (x<1) thin films induced by N implantation (1988) (9)
- Laser-induced Chemical Reaction. II. Reaction Induced by a Giant Pulse Laser (1969) (9)
- Coloring of iron surface controlled by Ti +O + double-ion implantations (1985) (9)
- Aperiodic Conductance Fluctuations in a Narrow GaAs/AlGaAs Wire (1989) (9)
- High-power, line-tunable14NH3 and15NH3 lasers (1985) (9)
- An x‐ray photoelectron spectroscopy study on ion beam induced deposition of tungsten using WF6 (1989) (9)
- Focused ion beam processing (1989) (9)
- Two-dimensional variable range hopping and superconducting transition temperatures in Y1Ba2Cu3O7−y films on MgO and impurity doped ceramics (1988) (9)
- Picosecond decay kinetics of CdS luminescence studied by a streak camera (1979) (9)
- Depth Distribution of Defects in Mg-Ion and Cd-Ion Implanted GaAs (1976) (9)
- Etching Rate Control by MeV O+ Implantation for Laser-Chemical Reaction of Ferrite (1990) (9)
- A sputtered neutral mass spectrometer with high current, low energy ion bombardment (1988) (9)
- Study of the dynamics of excited states in CdS and CuCl by transient grating techniques (1986) (9)
- Ion beam assisted etching of SiO2 and Si3N4 (1988) (9)
- Fabrication and transport characteristics of semiconductor wire and ring structures (1988) (9)
- Fabrication method and efficiency of new soft X-ray diffraction gratings: Bakable laminar gratings and transmission gratings for synchrotron radiation spectroscopy (1983) (8)
- Nitrocellulose as a self‐developing resist for focused ion beam lithography (1988) (8)
- Wide-Band Frequency Response Measurements of IR and FIR Detectors by Diode-CO2 Laser Heterodyne Detection (1984) (8)
- Exciton Absorption in GaSe under Intense Excitation (1977) (8)
- Effect of low-temperature photoconduction on the depletion width in GaAs-AlGaAs wire (1990) (8)
- Fabrication of Periodic Structures in GaAs by Focused-Ion-Beam Implantation (1990) (8)
- Magnetic Analysis of Quadrupole Lens for MeV Ion Microprobe (1989) (8)
- Investigation of ballistic elastic scattering length and specularity in multiterminal GaAs/AlGaAs by magnetic electron focusing effect (1993) (8)
- Picosecond Induced Absorption in CuCl: A New Approach to the Determination of Additional Boundary Conditions (1983) (8)
- Damage induced during channeling measurements with a nuclear microprobe (1991) (8)
- Maskless Fabrication of High Quality DFB Laser Gratings by Laser Induced Chemical Etching (1985) (8)
- A 500 keV ion beam accelerator for microbeam formation (1990) (8)
- CO2 Laser Detection Using a Warm Carrier Device with a Thin Film Antenna (1984) (8)
- Comparison between properties of steels implanted with unseparated ions and a selected ion (1981) (8)
- Lattice-Site Locations of Tin and Antimony Implanted in Gallium Phosphide (1977) (8)
- Photoluminescence measurement of ion‐etched GaAs surface (1975) (8)
- Evaluation of beam-induced ablation during microbeam irradiation (1991) (8)
- EXPOSURE AND DEVELOPMENT SIMULATIONS FOR NANOMETER ELECTRON BEAM LITHOGRAPHY. (1983) (8)
- High Voltage Measurement by ADP Crystal Plate (1956) (8)
- Hot electrons and exciton-electron collision in GaAs under external electric field (1978) (8)
- Influence of edge current and contact on nonlocal Shubnikov-de Haas oscillations in macroscopic GaAs/AlGaAs wire (1991) (8)
- Electron Focusing in a Widely Tapered Cross Junction (1991) (8)
- Laser-induced Chemical Reactions. IV. Reactions of Carbon Vapor with Hydrogen at Various Pressures (1970) (8)
- Microbeamline design for medium to high energy helium ion beams (1989) (8)
- Optical Waveguiding and Electrooptic Modulation in Ion Implanted CdTe (1976) (7)
- Laser-induced dry chemical etching of Mn-Zn ferrite in CCl2F2 atmosphere (1991) (7)
- Group Velocity and Dispersion Relation of Polariton Wave-Packet in CdS (1983) (7)
- Internal Q-Switching in n-Type GaAs Lasers under Electron Beam Excitation (1971) (7)
- Relation of Laser Induced Ion Energy to Laser Power (1967) (7)
- Deep levels induced by focused ion implantation in GaAs (1987) (7)
- An Imaging X-Ray Microscope Using a Laser-Plasma Source (1992) (7)
- Study of metal-semiconductor interface states using deep level transient spectroscopy (1987) (7)
- Influence of spin density in implanted Si layers on pulsed‐laser annealing (1979) (7)
- Microfabrication using focused ion beams (1990) (7)
- CONCENTRATION PROFILES OF ARSENIC IMPLANTED IN SILICON (1973) (7)
- Laser-induced trench etching of GaAs in aqueous KOH solution (1990) (7)
- Time Dependent Fluorescence Spectrum of an e-Beam Pumped KrF Laser Medium in a High Current Density Range (1980) (7)
- Self-Development Properties of Nitrocellulose for Focused Ion Beam Lithography (1988) (7)
- RBS tomography of SOI structures using a MeV ion microprobe (1990) (7)
- Sample size dependence of magnetoconductance fluctuations in narrow n + -GaAs wires (1987) (7)
- Low temperature magnetoresistance in a narrow wire of GaAs/AlGaAs (1990) (7)
- MBE growth of GaAs/AlAs QW structures on GaAs channeled substrates with submicron facets (1992) (7)
- In situ development of ion bombarded poly(methylmethacrylate) resist in a reactive gas ambient (1988) (7)
- Activation Energies of Formation and Diffusion of As Vacancy in GaAs Measured by Photoluminescence (1975) (6)
- Anodic oxidation of AlxGa1−xAs (1984) (6)
- X‐ray lithography by synchrotron radiation of the SOR‐RING storage ring (1979) (6)
- Nonlocal Shubnikov-de Haas oscillations through edge and bulk currents in GaAs/AlGaAs mesoscopic quantum wires (1991) (6)
- Maskless Etching of AN Using Focused Ion Beam (1986) (6)
- Electron focusing effects in the in-plane gated structures (1992) (6)
- Stepwise Monolayer Growth of GaAs by Pulsed Laser Metal Organic Vapor Phase Epitaxy (1986) (6)
- A Tunable Picosecond UV Dye Laser Pumped by the Third Harmonic of a Nd: YAG Laser (1979) (6)
- Focusing Characteristics of X-Ray Zone Plates Fabricated by Electron Beam Lithography and Reactive Ion Etching (1984) (6)
- Numerical studies of quantum conduction through a junction of wide-narrow geometry (1992) (6)
- Lateral growth of cobalt suicide observed by an MeV helium ion microprobe (1992) (6)
- Temperature Dependence of Decay Time of Photoluminescence from GaAs/Ga0.6Al0.4As Multi Quantum Well Structures (1985) (6)
- Electron spin resonance of ion-implanted Si:P systems (1976) (6)
- Direct Writing of Gratings by Electron Beam in Poly(metyl methacrylate) Optical Waveguides (1979) (6)
- Focused ion beam etching of nitrocellulose (1987) (6)
- Nanometer structure fabrication attained by a nanometer E-beam lithography system (NSF-1) (1985) (6)
- Concentration Profiles of Room Temperature Ion Implanted Indium in Silicon (1971) (6)
- X-ray Replication of Masks by Synchrotron Radiation of INS-ES (1977) (6)
- In situ patterning of GaAs by focused ion beam (1991) (5)
- Enhanced Diffusion of Ion Implanted Sb in Silicon (1970) (5)
- Electron and Laser Beam Processing (1964) (5)
- Low-Energy Ion-Beam Irradiation Effects on Two-Dimensional Electron Gas in Modulation-Doped AlGaAs/GaAs Heterostructure (1991) (5)
- Ion implantation in single-crystal magnetic ferrite (1989) (5)
- Image processing for three-dimensional analysis by an MeV ion microprobe (1991) (5)
- Gallium Arsenide Layers Grown by Molecular Beam Epitaxy on Single Crystalline Germanium Islands on Insulator (1984) (5)
- Width dependence of magnetoresistance in GaAs‐AlGaAs wires fabricated by mesa etching (1990) (5)
- Photoluminescence and Electrical Measurements on Manganese Ion-Implanted GaAs (1976) (5)
- Quick Focus Adjustment for Quadrupole Lens System to Form High-Energy Ion Microbeam (1989) (5)
- Ion beam lithography (1984) (5)
- Characteristics of Al maskless patterning using focused ion beams (1985) (5)
- Laser-Assisted Local Etching of Gallium Arsenide (1983) (5)
- Ion Beam Assisted Deposition of Metal Films (1988) (5)
- Etched Profile of Si by Ion-Bombardment-Enhanced Etching (1981) (5)
- Self-Developing Characteristics of Nitrocellulose Exposed to Ion Beams (1987) (5)
- Backscattering study of implanted arsenic distribution in poly-silicon on insulator (1987) (5)
- 40 nm Width Structure of GaAs Fabricated by Fine Focused Ion Beam Lithography and Chlorine Reactive Ion Etching (1988) (5)
- Highly sensitive self developing electron-beam resist of aldehyde copolymer (1982) (5)
- Concentration profiles of chromium and nickel implanted in pure iron (1981) (5)
- OTCS study of defect state in Fe-doped semi-insulating InP induced by ion irradiation and thermal annealing (1983) (5)
- Isotope-selective infrared multiphoton dissociation of CF3Br in a supersonic free jet (1986) (5)
- Resistance changes induced by electron‐spin resonance in ion‐implanted Si : P system (1978) (5)
- Photoelectric Recording Interferometer for Gas Analysis (1959) (5)
- Optical Absorption Measurements of α-Hydronaphthyl Radical Produced in Naphthalene by Electron Beam Irradiation and Hydrogen Atom Bombardment (1971) (5)
- Time duration of output pulse in electron-beam-pumped CdS laser (1971) (5)
- Effects of radio‐frequency bias on GaAs surfaces etched by Ar‐electron‐cyclotron‐resonance plasma (1990) (5)
- Carrier concentration profiles by high-energy boron ion implantation into silicon (1991) (5)
- Shubnikov-de Haas Oscillations in a Narrow GaAs/AlGaAs Wire (1990) (5)
- Self-Development Mechanism of Nitrocellulose Resist: Electron Beam Irradiation (1995) (5)
- Electrical Properties of Laser-Annealed Glow-Discharge Amorphous Silicon Layers (1980) (4)
- Lifetime and Diffusion Coefficient of Carriers in X-Ray Irradiated a-Si:H (1983) (4)
- The determination of the band offset of multi-quantum wells by magneto-optical measurements (1990) (4)
- Influence of beam current fluctuation on secondary electron and RBS mapping images (1991) (4)
- Wide-range amplification of a tunable-diode laser using optically pumped high-pressure NH(3) gas. (1984) (4)
- Maskless Dry Etching of GaAs by Focused Laser Beam (1984) (4)
- Efficient Amplification of an Optically Pumped NH3 Laser at 11.707 µm (1981) (4)
- Microfabricated Submicron Al-Filament Biprism as Applied to Electron Holography (1991) (4)
- Optical properties of ion implanted AINx (1989) (4)
- Concentration Profiles of Nickel and Chromium Implanted in Mild Steel (1977) (4)
- Erratum: Electron‐beam‐excited DFB laser in CdS (1975) (4)
- Increase in Tc of Nb Films Implanted with N+2 (1975) (4)
- LASER ANNEALING EFFECTS IN ION-IMPLANTED GaAs (1980) (4)
- The determination of exciton binding energy in InGaAs/GaAs strained quantum wells from magneto-absorption measurements (1989) (4)
- Syntheses and applications of graft copolymers from poly(1,1-diphenylethylene-co-divinylbenzene)s (1986) (4)
- RBS analysis of beam-processed microarea by focused MeV ion beam (1989) (4)
- A CO2- Laser- Pumped Para- H2 Raman Laser (1985) (4)
- Experimental tests of non-thermal effect for pulsed-laser annealing by time-resolved reflectivity and EPR measurements (1983) (4)
- Fabrication of thin-film warm carrier infrared laser detectors using nitrocellulose self-developing resist (1986) (4)
- Measurements of x‐ray dose required for multiatmospheric pressure CO2 laser discharge (1986) (4)
- Self‐development mechanism of nitrocellulose: Heating effect (1989) (4)
- Rapid thermal annealing of arsenic-implanted poly-Si layers on insulator (1989) (4)
- Current work on focused ion beams in Japan (1987) (4)
- Highly Collimated Laser Beam from Tunable Distributed-Feedback Dye Laser (1976) (4)
- Dimensional Crossover of Electron-Electron Scattering in GaAs-AlGaAs Wires (1989) (4)
- ENHANCED DIFFUSION AND ELECTRICAL PROPERTIES OF ION IMPLANTED SILICON. (1971) (4)
- ESR Studies on Annealing Behavior of Heavily Damaged Silicon (1975) (4)
- MBE growth of GaAs/AlAs double-barrier structures on GaAs channeled substrates (1991) (4)
- Ion implantation of Zn, Se and Cd in BP crystals (1980) (4)
- New Fabrication Technique of Quantum Wire Structures with Dimensions Precisely Controlled by the CBE Method (1989) (4)
- Chlorine isotope enrichment by the photochemical reaction of chlorine molecules using the Ar ion laser (1978) (4)
- In situ patterning of Si3N4 by an ion-beam-induced gas surface reaction (1989) (4)
- Abnormal Laser Emission from Electron Beam Excited GaAs (1970) (4)
- A Liquid Encapsulated Laser Recrystallization for Silicon-on-Insulator Structures (1989) (4)
- Electron−beam−excited DFB laser in CdS (1975) (4)
- Pseudomorphic InGaAs/AlAs quantum wells grown on GaAs channeled substrates by MBE☆ (1992) (4)
- B, Sb and Si Liquid Metal Alloy Ion Sources for Submicron Fabrication (1981) (4)
- Characterization of GaAs and AlGaAs Layers Grown by Laser Atomic Layer Epitaxy (1990) (4)
- Formation of Hg1-xCdxTe by Ion Implantation (1974) (4)
- Quantum Transport in PtSi Thin Films and Narrow Wires (1995) (4)
- Modulation of the Optical Guided Wave by UV Light Excitation (1973) (4)
- Ballistic mean free path in GaAs-AlGaAs electron waveguides (1990) (4)
- In situ observation and correction of resist patterns in atomic force microscope lithography (1998) (4)
- Fabrication of GaAs/GaAlAs quantum wires with side gates (1990) (4)
- Maskless Ion Implantation of Cerium by Focused Ion Beam (1988) (3)
- Stimulated Emission from Nd3+ Glass (1963) (3)
- Self-Development Properties of Nitrocellulose (Dependence on Ion Species) (1989) (3)
- An annular electron beam for longitudinal electron beam pumped high power lasers (1982) (3)
- Comparison between Concentration Profiles of Arsenic Implanted in Silicon Measured by Means of Neutron Activation Analysis and Radioactive Ion Implantation (1975) (3)
- Transport Properties in Hexagonal Arrays of Antidots with Different Carrier Densities (1992) (3)
- Deep levels in implanted, pulse-laser-annealed GaAs (1981) (3)
- Tunable picosecond pulse laser source using distributed feedback laser (1977) (3)
- High Resolution Fabrication of Submicron Structures by Ion Beam Lithography (1980) (3)
- Photoluminescence Study of Cd-Ion Implanted n-GaAs (1976) (3)
- Crystallization of Vacuum-Deposited Indium Antimonide Films by the Electron Beam Zone-Melting Process (1967) (3)
- Reactive Species Produced by Laser Irradiation. The Reaction of CN Radicals with Hydrocarbons (1972) (3)
- Laser Oscillation at 5378 Å by Laser-Produced Cadmium Plasma (1976) (3)
- Explanation of Light-Intensity Dependence of Photoconductivity in Zinc Phthalocyanine (1972) (3)
- Numerical analysis on the Raman conversion of CO2 laser pulses in a multiple pass cell (1984) (3)
- Laser-induced Chemical Reactions. VI. On the Formation Processes of Acetylene (1973) (3)
- Fabrication of SiO2 Grating Patterns with Vertical Sidewalls by SOR X-Ray Lithography and Reactive Ion-Beam Etching (1981) (3)
- Optimization in Spot Sizes of Focused MeV Ion Beam by Precise Adjustment of Lens-Current Excitations (1988) (3)
- Modification of magnetic property in Mn‐Zn ferrite by MeV ion implantation (1991) (3)
- High-Spectroscopic Qualities In Blazed Ion-Etched Holographic Gratings (1981) (3)
- Radiation damage in Tb-implanted CaF2 observed by channeling and luminescence measurements (1993) (3)
- CO2 laser using electrochemical transformation of organic compounds (1984) (3)
- Electrostatic accelerators with high energy resolution (1991) (3)
- Fabrication Of X-Ray Optical Elements By Electron Beam Lithography (1986) (3)
- Dependences of Laser Wavelength and Pumping Power at Threshold on Cavity Length in Electron-Beam-Pumped CdS Laser (1975) (3)
- Optical characterizations of undoped GaAs crystals grown by reduced pressure metalorganic vapor‐phase epitaxy (1987) (3)
- Diffusion of carbon atoms in hydrogenated amorphous silicon carbide into hydrogenated amorphous silicon through the interface (1984) (3)
- Channeling contrast analysis of local damage distributions induced by maskless implantation (1991) (3)
- Size effect in the low temperature magnetoresistance of narrow GaAs/AlGaAs wires (1992) (3)
- Erratum: Laser enhanced metalorganic chemical vapor deposition crystal growth in GaAs [Appl. Phys. Lett. 47, 95 (1985)] (1986) (3)
- Ion implantation in semiconductor processing (1981) (3)
- Nonlocal quantum conduction and the influence of contact resistance in GaAs/AlGaAs wires (1992) (3)
- Flash-Lamp-Pumped Tunable Ti:BeAl2O4 Laser (1990) (3)
- Optical Absorption Bands o the Radical in Irradiated Anthracene Single Crystals (1971) (3)
- Stress-induced stimulated emission from excitonic molecule in CdS (1974) (3)
- Fabrication of narrow channels in GaAs-AlGaAs heterostructures and the lateral quantization effect (1989) (3)
- Ar and Ne Diluent Gas Effects on Output Performance of Electron-Beam-Excited Xe Cl Lasers (1984) (3)
- Polymers of α-substituted benzyl methacrylates as a new type of electron-beam resist (1983) (3)
- Weak localization in platinum silicide thin films and thin wires (1987) (3)
- High-Power Subpicosecond Pulse Generation in Near-IR Region by Cavity-Dumped Passive and Synchronous Hybrid Mode-Locking System (1982) (3)
- A Large Time Delay of the Stimulated Emission in CdS Laser Pumped by an Electron Beam (1970) (3)
- Stimulated Emission from CdS Thin Films Excited by N2 Laser (1974) (3)
- Characterization of masklessly deposited metal lines by a micro-RBS probe (1990) (3)
- Tunable Subpicosecond Pulse Generation in near IR Region from OX-725 Dye Laser by Passive and Synchronous Hybrid Modelocking Method (1981) (3)
- Polymers of α-Substituted Benzyl Methacrylates and Aliphatic Aldehydes as New Types of Electron-Beam Resists (1985) (3)
- Photo-etching of PMMA by Excimer Laser Irradiation (1980) (3)
- Bi-Level Structures for Focused Ion Beam Using Maskless Ion Etching (1984) (3)
- PMIPK–azide dry‐developable resist in electron beam lithography (1985) (3)
- PENETRATION OF ELECTRONS INTO ANTHRACENE CRYSTALS. (1971) (3)
- A 500 keV ion accelerator with two types of ion source (1991) (3)
- Effects of an Electric Field on the Decay Time of Luminescence from a GaAs/Ga0.6Al0.4As Multi-Quantum-Well Structure (1987) (2)
- Raman measurement of local SOI structure by SIMOX (1991) (2)
- Amplitude Modulation of 6328 Å Guided Wave in ZnS-Glass Directional Coupler by Free-Carrier Injection (1974) (2)
- Low Temperature Magnetoresistance of a Quasi-Ballistic Narrow Wire Confined by Split Metal Gates (1991) (2)
- Laser irradiation effects on photoluminescence spectra of undoped GaAs grown by metalorganic vapor phase epitaxy (1988) (2)
- Maskless Etching Of Inp And Gaas By Means Of Ion Beam Assisted Etching (1986) (2)
- Deposition of Crystalline Silicon Films using Excimer Laser (1988) (2)
- Proceedings of the international conference on Micro- and nanofabrication (1997) (2)
- Fabrication of Nb variable-thickness- and point-contact-type bridges by means of microfabrication technology (1980) (2)
- A comparative study of D and H implantation-induced shallow donors in Si (1989) (2)
- The Characteristics of Ion-Beam-Induced Spontaneous Etching of GaAs by Low-Energy Focused Ion Beam Irradiation (1991) (2)
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- Effects of Heat Treatment on the Sensitivity of Warm Carrier Devices for CH3OH Laser Radiation (1993) (2)
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- Microfabrication using focused ion beams part II (1990) (2)
- UF6 Photodissociation through Measurement of Visible and Infrared Luminescence (1986) (2)
- Beam quality of A KrF laser pumped by an annular electron beam (1982) (2)
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- Contrast of the X-Ray Mask for Synchrotron Radiation and the Characteristics of Replicated Pattern (1979) (2)
- Nanometer Pattern Delineation by Electron and Ion Beam Lithography (1984) (2)
- Luminescence during Eu, Fe and Cr implantation into CaF2 (1990) (2)
- Study of Absorption Spectrum of Bromine Molecule for Laser Isotope Separation (1976) (2)
- Isotope Shift and Absorption Spectrum of Chlorine Available for Laser Isotope Separation (1977) (2)
- Characteristics of Selective Deposition of Metal Organic Films Using Focused Ion Beams (1984) (2)
- Ion Beam Assisted Deposition of Tungsten on GaAs (1990) (2)
- Dynamic Behavior of 30-ps Pulsed-Laser Annealing in Ion-Implanted Si (1979) (2)
- Dose Dependence of Photoluminescence Degradation in Te Ion-Implanted GaAs (1973) (2)
- NANOSTRUCTURE FABRICATION FOR MESOSCOPIC DEVICES (1993) (2)
- Influence of gate voltage on nonlocal resistance in GaAs/ AlGaAs heterostructure at high magnetic fields (1993) (2)
- Atom Location in the Case of Enhanced Diffusion Measured by Backscattering Method (1971) (2)
- Development of High-Power HF Chemical Laser Initiated by Electron Beam (1982) (2)
- Determination of Dispersion Curves of Excitonic Polaritons by Picosecond Time-of-Flight Method (1980) (2)
- Ballistic and elastic mean free paths determined by magnetic electron focusing effect in GaAs/AlGaAs (1992) (2)
- Study on Saturation Process by Anomalous Dispersion of Ruby Laser (1965) (2)
- Anderson Localization and Universal Conductance Fluctuations with Spin-Orbit Interactions in δ-Doped GaAs Films and Wires (1991) (2)
- Maskless Fabrication Using Focused Ion Beams (1983) (2)
- Ion-Implanted Arsenic Profiles in GaAs Encapsulated by SiO2 and Si3N4 (1978) (2)
- Infrared Two-Color Raman Laser by Four-Wave Raman Mixing (1988) (2)
- Contribution of Free Radicals to Electrical Conductivity (1974) (2)
- Luminescence and Raman processes under resonant two photon excitation in CuCl (1979) (2)
- MeV-ion-beam induced localized enhancement of magnetization in stainless steel foils (1991) (2)
- Ballistic Electron Transmission in GaAs–AlGaAs Crossed Wire Junctions (1990) (2)
- Fabrication of an optical directional coupler of CdTe by electron beam lithography and ion etching (1980) (2)
- 1 GW high power subpicosecond pulse generation in near IR region (1985) (2)
- Buried Metal Deposition on Gallium Arsenide by Laser-Induced Thermochemical Reaction (1987) (2)
- Ridge Type Microfabrication by Maskless Ion Implantation of Si into SiO2 Film (1985) (2)
- Voltage fluctuations in mesoscopic structures of bismuth (1990) (2)
- The Decomposition of Organic Substances by Laser Heating (1974) (1)
- Fabrication of Niobium Weak Links by Means of Electron Beam Lithography and Ion Implantation (1979) (1)
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- Dynamic behavior of two-dimensional exciton in GaAs single quantum well under a magnetic field (1988) (1)
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- Modulation of the Optical Guided Wave by uv Light and Electron Beam Excitations (1973) (1)
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- 2004 International Microprocesses and Nanotechnology Conference Committee Members (2004) (1)
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- Proceedings of the fifth European conference on Electron and optical beam testing of electronic devices (1993) (1)
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- Measurement of the Temporal Change in the Refractive Index of ZnS Thin Films (1975) (1)
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- Effects of Dual Implantations and Annealing Atmosphere on Lattice Locations and Atom Profiles of Sn and Sb Implanted in GaP (1977) (1)
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- Heterostructure CdS/sub 1-x/Se/sub x/ surface lasers (1974) (0)
- Single Crystal Silicon Films on Non-conductive Substrate (1965) (0)
- Fabrication of Thin-Film Warm-Carrier Infrared Laser Detectors (1985) (0)
- Determination of additional boundary conditions in CuCl (1983) (0)
- High-efficiency all-solid-state exciter for a high-average-power TEA CO2 Laser (1988) (0)
- Pulse Compression of Mode-Locked YAG Laser (1979) (0)
- Change in Magnetic Characteristic Of Stainless-Steel by Laser and Ion Beams (1989) (0)
- Optical Waveguiding and Electrooptic Modulation in Ion-Implanted CdTe (1976) (0)
- Transient Characteristics of Luminescence from GaAs/Ga0.6Al0.4As Multi-Quantum-Well Structure under Resonant Excitation (1987) (0)
- Influence of excitation current deviation of a quadrupole magnet on beam spot size for MeV microbeams (1989) (0)
- Deep uv lithography by using excimer lasers. (Photo‐etching characteristics and development of an uniform intensity irradiation system) (2008) (0)
- Dynamic behaviors of pulsed‐laser annealing in ion‐implanted silicon studied by measuring the optical reflectance (2008) (0)
- Measurement of the weak Luminescence from the Semiconductor by Synchroscan Streak Camera system (1986) (0)
- Size Dependence of Universal Conductance Fluctuations in Narrow n+-GaAs Wires (1987) (0)
- Picosecond Carrier Dynamics in GaAs/Ga1-xAlxAs Single and Multi Quantum Well Structure (1984) (0)
- Electronic Transport in a Quasi-Ballistic Narrow Wire Confined by Split Metal Gates (1992) (0)
- Maskless Etching of SiO 2 by Ion Beam Assisted Etching Technique (1987) (0)
- Maskless Formation of Tungsten Films by Ion Beam Assisted Deposition Technique (1989) (0)
- THE EFFECT OF STOKES SEED FROM A DIODE LASER IN A PARA-H 2 RAMAN LASER (1988) (0)
- Quantum Interference Effect in Selectively Doped GaAs-AlGaAs Submicron Ring (1987) (0)
- Microfabrication by Electron and Ion Beam( The Present State of Processing Limit and Process Design) (1977) (0)
- Comprehensive study of a CO2 laser using electrochemical transformation of organic compounds (1984) (0)
- PHOTOLUMINESCENCE OF Cd-ION IMPLANTED GaAs (1977) (0)
- Effect of Scattering on Ballistic Transport in GaAs/GaAlAs Heterostructures: Magnetotransport in Anti-Dot Lattice (1992) (0)
- 31a-K-1 Quantization of the exciton polariton in GaAs thin films (1989) (0)
- Fabrication of CdTe Optical Waveguide by LPE Using the Boat-Slide Technique (1977) (0)
- Internal Q-Switching in Electron Beam Excited Gallium Arsenide Lasers (1970) (0)
- Using electron-beam excited ion beam source. (1986) (0)
- High Dose Implantation of Au and Cu into Si Studied by Auger Electron and Backscattering Spectroscopies (1977) (0)
- UV Excitation of Anthracene (1974) (0)
- Resonant Optical Pumping of CIII by XUV Radiation from a CO2 Laser Produced Plasma (1988) (0)
- The Reaction of Water Vapor and Carbon Vapor Produced by Laser Irradiation (1975) (0)
- A Transverse Electron Beam Source for the Excitation of CW Lasers (1987) (0)
- 30a-Z-8 Exciton Binding Energy in InGaAs/GaAs Strained Quantum Wells (1990) (0)
- Carrier Dynamics in Microcrystalline Silicon Examined by Transient Grating Method (1985) (0)
- Magnetoresistance in a Quasi-Ballistic Narrow Wire Confined by Split Metal Gates (1991) (0)
- Self-Development Properties of Nitrocellulose (Dependence on Ion Energies) (1989) (0)
- Proceedings of the second session on Electrical and physical characterization of materials and devices for silicon microelectronics (1998) (0)
- Proceedings of symposium D of the 1993 E-MRS spring meeting on Integrated processing for micro and optoelectronics (1994) (0)
- Ultrafine fabrication and electron wave devices. (1989) (0)
- Maskless Patterning of Mo and Si by Focused Ion Beam Implantation (1986) (0)
- Laser-Acoustic Microscope (1984) (0)
- Microfabrication Techniques for Integrated Optics (1978) (0)
- Single Particle Relaxation Times from Shubnikov-de Haas Oscillations in Antidot Structures (1993) (0)
- Characteristics of the Time-Resolved Photoluminescence in Microcrystalline Si (1986) (0)
- Properties of HF Chemical Laser Initiated by Inclined Electron-Beams (1983) (0)
- Nanolithography for VLSI and ULSI (1989) (0)
- HOLE TRAPS IN ANTHRACENE SINGLE CRYSTALS PRODUCED BY ELECTRON BEAM IRRADIATION. (1971) (0)
- Ion-beam deposition of metal films (1967) (0)
- Proceedings of the 8th biennial conference on Insulating films on semiconductors (1993) (0)
- Picosecond Dynamics of Excitonic Polariton in CuCl (1982) (0)
- Electromodulated reabsorption of luminescence in GaAs-MOS and Schottky systems (1978) (0)
- Heating effects on self-development properties of nitrocellulose (1992) (0)
- Pulsed Laser Annealing of Ion Implanted Si (1979) (0)
- Diffusion of Atoms Implanted in Poly Silicon Layer on Insulator (1987) (0)
- Ion implantation in semiconductors : science and technology : proceedings of the fourth International Conference on Ion Implantation in Semiconductors and Other Materials, held at the Osaka Chamber of Commerce and Industry, August 1974 (1975) (0)
- Nonlocal Effects in Mesoscopic Ballistic Conductors (1990) (0)
- Distributed feedback laser in CdS (1974) (0)
- Beam Angle and Output Energy of Ruby Laser in External Mirror Alignment (1964) (0)
- Chemically Assisted Ion Beam Etching of GaAs/AlGaAs Using Chlorine Ions (2017) (0)
- CO 2 laser using electrochemical transformation of organic compounds (1984) (0)
- Erratum: Picosecond carrier dynamics in optically illuminated glow discharge hydrogenated amorphous silicon [Appl. Phys. Lett. 42, 79 (1983)] (1983) (0)
- Amplified Spontaneons Emission (ASE) Characteristics of the Kr F Laser Excited by an Axially Injected Electron-Beam (1981) (0)
- Antenna properties of thin‐film warm‐carrier devices fabricated by using focused ion beam milling (1988) (0)
- Localization and Electron-Electron Interaction Effects in Platinum Silicide Thin Wires (1986) (0)
- Vacuum evaporated metal film resistors. (1961) (0)
- LASER-INDUCED CHEMICAL REACTIONS PART 6. ON THE FORMATION PROCESSES OF ACETYLENE (1973) (0)
- POPULATION INVERSION IN IN C 3+ IN A LASER-PRODUCED PLASMA (1988) (0)
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