Sylwester Porowski
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Polish physicist
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Physics
Sylwester Porowski's Degrees
- PhD Physics University of Warsaw
- Masters Physics University of Warsaw
Why Is Sylwester Porowski Influential?
(Suggest an Edit or Addition)According to Wikipedia, Sylwester Andrzej Porowski , is a Polish physicist specializing in solid-state and high pressure physics. He is the Co-Director and Board Member of The Institute of High Pressure Physics, Polish Academy of Sciences in Warsaw.
Sylwester Porowski's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Observation Of Native Ga Vacancies In Gan By Positron Annihilation (1997) (414)
- Lattice parameters of gallium nitride (1996) (348)
- Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN (1984) (317)
- Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films (1999) (202)
- Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN (1995) (202)
- Thermal expansion of gallium nitride (1994) (193)
- Mechanism of yellow luminescence in GaN (1995) (190)
- Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire (1997) (166)
- Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals (1998) (156)
- Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer (1994) (156)
- Thermodynamical properties of III–V nitrides and crystal growth of GaN at high N2 pressure (1997) (153)
- Chemical polishing of bulk and epitaxial GaN (1997) (152)
- Elastic and plastic properties of GaN determined by nano-indentation of bulk crystal (1999) (140)
- High pressure growth of GaN — new prospects for blue lasers (1996) (133)
- Exciton region reflectance of homoepitaxial GaN layers (1996) (133)
- Determination of the effective mass of GaN from infrared reflectivity and Hall effect (1996) (126)
- Hardness and fracture toughness of bulk single crystal gallium nitride (1996) (120)
- Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates (1996) (114)
- High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates (2000) (113)
- High pressure thermodynamics of GaN (1984) (113)
- Bulk and homoepitaxial GaN-growth and characterisation (1998) (111)
- III V Nitrides—thermodynamics and crystal growth at high N2 pressure (1995) (109)
- Negative differential resistance in dislocation-free GaN/AlGaN double-barrier diodes grown on bulk GaN (2006) (104)
- Ethanol-perturbed amyloidogenic self-assembly of insulin: looking for origins of amyloid strains. (2005) (102)
- Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition (1996) (98)
- Thermal properties of indium nitride (1998) (96)
- Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN (2005) (90)
- GaN-AlGaN Heterostructure Field-Effect Transistors over Bulk GaN Substrates (2000) (86)
- Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition (1999) (82)
- Degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals (2006) (78)
- Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope (2002) (77)
- POLARITON EFFECTS IN REFLECTANCE AND EMISSION SPECTRA OF HOMOEPITAXIAL GAN (1997) (76)
- Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD) (1999) (76)
- Structural characterization of bulk GaN crystals grown under high hydrostatic pressure (1996) (75)
- Optical and magnetic properties of Mn in bulk GaN (2004) (72)
- Nonradiative recombination at threading dislocations in n-type GaN: Studied by cathodoluminescence and defect selective etching (2008) (70)
- THE INFLUENCE OF MG DOPING ON THE FORMATION OF GA VACANCIES AND NEGATIVE IONS IN GAN BULK CRYSTALS (1999) (70)
- Bulk GaN crystal growth by the high-pressure ammonothermal method (2006) (67)
- Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy (2005) (64)
- Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates (2005) (64)
- The role of water structure in conformational changes of nucleic acids in ambient and high-pressure conditions. (2001) (63)
- Highly reproducible, stable and multiply regenerated surface-enhanced Raman scattering substrate for biomedical applications (2011) (62)
- Structure and composition of GaN(0001) A and B surfaces (1999) (59)
- High mobility two-dimensional electron gas in AlGaN∕GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy (2005) (56)
- Mechanisms of crystallization of bulk GaN from the solution under high N2 pressure (2002) (54)
- 60 mW continuous-wave operation of InGaN laser diodes made by plasma-assisted molecular-beam epitaxy (2006) (53)
- Lattice constants, thermal expansion and compressibility of gallium nitride (1995) (52)
- Nitride-based laser diodes by plasma-assisted MBE—From violet to green emission (2009) (51)
- Band Structure of HgTe (1965) (50)
- Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy (2014) (48)
- GUNN EFFECT IN n‐TYPE InSb (1969) (47)
- Neutral Mn acceptor in bulk GaN in high magnetic fields (2004) (47)
- The microstructure of gallium nitride monocrystals grown at high pressure (1996) (47)
- High-Resolution Photoluminescence and Reflectance Spectra of Homoepitaxial GaN Layers (1999) (44)
- Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy (2001) (44)
- Growth and properties of single crystalline GaN substrates and homoepitaxial layers (1997) (44)
- Spontaneous Ordering in Bulk GaN:Mg Samples (1999) (44)
- GaN substrates for molecular beam epitaxy growth of homoepitaxial structures (2000) (43)
- Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers (2013) (42)
- Fully-screened polarization-induced electric fields in blue∕violet InGaN∕GaN light-emitting devices grown on bulk GaN (2005) (41)
- Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy (2011) (41)
- Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology (1999) (41)
- Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN (2001) (40)
- Crystal growth of III-N compounds under high nitrogen pressure (1993) (39)
- DOPING OF HOMOEPITAXIAL GAN LAYERS (1998) (38)
- Chemically ordered AlGaN alloys: Spontaneous formation of natural quantum dots (2005) (38)
- High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy (2005) (38)
- Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate (2000) (38)
- Effects of High Pressure Treatment on the Microbiological Quality, Texture and Colour of Vacuum Packed Pork Meat Products (2002) (37)
- Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology (2002) (37)
- Growth optimisation of the GaN layers and GaN/AlGaN heterojunctions on bulk GaN substrates using plasma-assisted molecular beam epitaxy (2004) (37)
- Ordering in bulk GaN : Mg samples: defects caused by Mg doping (1999) (37)
- High Quality Homoepitaxial GaN Grown by Molecular Beam Epitaxy with NH 3 on Surface Cracking (1997) (36)
- Electrochemical etching of highly conductive GaN single crystals (2001) (36)
- Growth of InGaN and InGaN/InGaN Quantum Wells by Plasma Assisted Molecular Beam Epitaxy. (2008) (36)
- Symmetry of excitons in GaN (1999) (36)
- Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes (2009) (35)
- Dry etching of GaN substrates for high-quality homoepitaxy (1999) (34)
- Surface reaction of nitrogen with liquid group III metals (2001) (34)
- GaN/AlGaN quantum wells for UV emission: heteroepitaxy versus homoepitaxy (2001) (34)
- Magnetic anisotropy of bulk GaN:Mn single crystals codoped with Mg acceptors (2005) (34)
- GaN homoepitaxial layers grown by metalorganic chemical vapor deposition (1999) (34)
- Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies (2000) (34)
- Structural Defects in Heteroepitaxial and Homoepitaxial GaN (1995) (33)
- GaN crystallization by the high-pressure solution growth method on HVPE bulk seed (2008) (33)
- Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths (2006) (32)
- The influence of lattice parameter variation on microstructure of GaN single crystals (2005) (32)
- InGaN light emitting diodes for 415 nm–520 nm spectral range by plasma assisted MBE (2009) (31)
- The challenge of decomposition and melting of gallium nitride under high pressure and high temperature (2015) (31)
- III–V Semiconducting Nitrides: Physical Properties under Pressure (1993) (31)
- Interaction of N2 molecule with liquid Ga surface – quantum mechanical calculations (DFT) (1998) (31)
- High-nitrogen-pressure growth of GaN single crystals: doping and physical properties (2001) (31)
- Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indium (1999) (30)
- Annealing of GaN under high pressure of nitrogen (2002) (30)
- Defects in GaN single crystals and homoepitaxial structures (2005) (30)
- Molecular doping of gallium nitride (1999) (30)
- Template-controlled conformational patterns of insulin fibrillar self-assembly reflect history of solvation of the amyloid nuclei. (2005) (30)
- A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal (2004) (30)
- Multi feed seed (MFS) high pressure crystallization of 1–2 in GaN (2012) (30)
- Homoepitaxial growth of GaN using molecular beam epitaxy (1996) (29)
- Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals (2001) (29)
- Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE (2002) (28)
- X-ray absorption, glancing-angle reflectivity, and theoretical study of the N K- and Ga M{sub 2,3}-edge spectra in GaN (1997) (28)
- Crystallization of low dislocation density GaN by high-pressure solution and HVPE methods (2007) (28)
- Control of Mg doping of GaN in RF-plasma molecular beam epitaxy (2005) (27)
- Optically detected magnetic resonance of the red and near-infrared luminescence in Mg-doped GaN (2001) (27)
- Influence of dopants on defect formation in GaN (2001) (26)
- The Application of High Pressure in Physics and Technology of III-V Nitrides (2001) (25)
- Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals (2003) (25)
- CFD and reaction computational analysis of the growth of GaN by HVPE method (2006) (25)
- Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy (2003) (25)
- Spin and interaction effects in Shubnikov–de Haas oscillations and the quantum Hall effect in GaN/AlGaN heterostructures (2004) (25)
- High Resistivity GaN Single Crystalline Substrates (1997) (24)
- Structural and Optical Properties of Homoepitaxial GaN Layers (1996) (24)
- Anomalous temperature characteristics of single wide quantum well InGaN laser diode (2006) (24)
- Free and bound excitons in GaN∕AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (112¯0) direction (2005) (23)
- Evidence from Transport Measurements at High Pressures for Donor Ions Occupying Non‐Equivalent Lattice Positions in InSb (1974) (23)
- High pressure vapor growth of GaN (1982) (23)
- Growth mechanism of InGaN by plasma assisted molecular beam epitaxy (2011) (22)
- Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates (2004) (22)
- Scattering on short‐range potentials in InSb (1971) (21)
- Gallium nitride growth on sapphire/GaN templates at high pressure and high temperatures (2005) (21)
- Influence of pressure on the mobility in heavily doped n‐type indium antimonide (1971) (21)
- Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE (2007) (20)
- GaN Crystals: Growth and Doping Under Pressure (1997) (20)
- Impurity-Related Luminescence of Homoepitaxial GaN Studied with High Magnetic Fields (1998) (20)
- Photoemission studies on GaN(0 0 0 1) surfaces (2001) (20)
- Properties of metal-insulator transition and electron spin relaxation in GaN:Si (2010) (20)
- Electronic structure of GaN(000-1)-(1 x 1) surface (2004) (19)
- Effect of pressure on exciton energies of homoepitaxial GaN (1998) (19)
- InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBEa) (2012) (19)
- MBE fabrication of III-N-based laser diodes and its development to industrial system (2013) (19)
- True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy (2012) (19)
- Fine structure of effective mass acceptors in gallium nitride. (2003) (18)
- Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy (1996) (18)
- Recent Results in the Crystal Growth of GaN at High N 2 Pressure (1996) (18)
- Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals (1999) (18)
- Growth of AlN, GaN and InN from the solution (2005) (18)
- Fabrication and properties of GaN-based lasers (2008) (18)
- High pressure fabrication and processing of GaN:Mg (1999) (17)
- Ultralow threshold powers for optical pumping of homoepitaxial InGaN/GaN/AlGaN lasers (2002) (17)
- AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy (2012) (17)
- High Pressure Solution Growth of Gallium Nitride (2010) (17)
- Spatial distribution of electron concentration and strain in bulk GaN single crystals - relation to growth mechanism (1996) (17)
- Growth of High Quality, MOCVD Grown Ga-Polar GaN Layers on GaN Substrates after Novel Reactive Ion Etching (1999) (16)
- Thermal Expansion of GaN Bulk Crystals and Homoepitaxial Layers (1996) (16)
- High pressure–high temperature seeded growth of GaN on 1 in sapphire/GaN templates: Analysis of convective transport (2007) (16)
- HIGH PRESSURE CRYSTALLIZATION OF III-V NITRIDES (1995) (16)
- Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors (2001) (16)
- New phenomena of low temperature resistivity enhancement in quantum ferroelectric semiconductors (1983) (16)
- Electron Density Distribution of Wurtzite-Type Gallium Nitride by Maximum Entropy Method (1998) (16)
- The effect of threading dislocations, Mg doping, and etching on the spectral responsivity in GaN-based ultraviolet detectors (1999) (15)
- High-resolution PL spectra of donor- and acceptor-bound excitons in homoepitaxial GaN-layers (1999) (15)
- Selective etching of dislocations in violet-laser diode structures (2006) (15)
- Strain relaxation in AlN epitaxial layers grown on GaN single crystals (1999) (15)
- short note: Blue Laser on High N_2 Pressure-Grown Bulk GaN (2001) (15)
- Bulk GaN crystals grown at high pressure as substrates for blue‐laser technology (2003) (15)
- Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN (1998) (15)
- High pressure cell for magneto-optical experiments (1986) (15)
- Optically pumped GaN∕AlGaN separate-confinement heterostructure laser grown along the (112¯0) nonpolar direction (2007) (15)
- Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration (2012) (15)
- GaN Crystals Grown in the Increased Volume High-Pressure Reactors (1996) (15)
- Electron spin resonance of erbium in gallium nitride (2000) (15)
- Strain-compensated AlGaN∕GaN∕InGaN cladding layers in homoepitaxial nitride devices (2007) (15)
- Near Defect Free GaN Substrates (1998) (14)
- Photoluminescence Dynamics in the Near Bandgap Region of Homoepitaxial GaN Layers (1997) (14)
- Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers (2005) (14)
- Photoluminescence in doped GaN bulk crystal (1995) (14)
- Dislocation Structure of Growth Hillocks in Homoepitaxial GaN (1999) (14)
- High nitrogen pressure solution growth of bulk GaN in “feed‐seed” configuration (2011) (13)
- TWO-ELECTRON TRANSITION IN HOMOEPITAXIAL GaN LAYERS (1997) (13)
- Growth of bulk GaN by HVPE on pressure grown seeds (2006) (13)
- Angle Resolved Photoemission Spectroscopy of GaN (101‐0): Experiment and Theory (1999) (13)
- Surface states on GaN(?)(11) an angle-resolved photoemission study (2002) (13)
- Electronic band structure of gallium nitride: a comparative angle-resolved photoemission study of single crystals and thin films (2002) (13)
- Optical and electrical properties of Be doped GaN bulk crystals (2001) (13)
- A new explanation of the Cl donor deionization and its kinetics observed in CdTe: Cl under hydrostatic pressure (1976) (13)
- Tilt of InGaN layers on miscut GaN substrates (2010) (12)
- Blue lasers on high pressure grown GaN single crystal substrates (2004) (12)
- Blue light-emitting diodes on GaN substrates, growth and characterization (1998) (12)
- Magneto-optical investigation of a deep centre in n-InSb (1986) (12)
- Bulk GaN crystals and wafers grown by HVPE without intentional doping (2009) (12)
- Mechanism of radiative recombination in acceptor-doped bulk GaN crystals (1999) (11)
- Surface morphology of as grown and annealed bulk GaN crystals (1996) (11)
- High-power laser structures grown on bulk GaN crystals (2004) (11)
- S–d exchange interaction in GaN:Mn studied by electron paramagnetic resonance (2003) (11)
- Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure (2004) (11)
- Metal‐Insulator Transition in GaN Crystals (1996) (11)
- Interaction between Sm and GaN––a photoemission study (2004) (11)
- Blue‐Laser Structures Grown on Bulk GaN Crystals (2002) (10)
- Properties of InGaN blue laser diodes grown on bulk GaN substrates (2005) (10)
- High-pressure EPR cavity. (1978) (10)
- C‐plane bowing in free standing GaN crystals grown by HVPE on GaN‐sapphire substrates with photolithographically patterned Ti masks (2011) (10)
- On the Origin of the Yellow Donor-Acceptor Pair Emission in GaN (1997) (10)
- Pressure and Time-Resolved Photoluminescence Studies of Mg-Doped and Undoped GaN (1996) (10)
- Recovery and recrystallization of polycrystalline copper during hydrostatic extrusion (1982) (10)
- RHEED Studies of Group III‐Nitrides Grown by MBE (1999) (10)
- Influence of substrate misorientation on properties of InGaN layers grown on freestanding GaN (2008) (10)
- Why InGaN laser-diode degradation is accompanied by the improvement of its thermal stability (2008) (9)
- Location of the 〈111〉 conduction band minima in the Ga x In 1-x Sb alloy system (1969) (9)
- Broad-area high-power CW operated InGaN laser diodes (2006) (9)
- Polarised Magnetoluminescence of Excitons in Homoepitaxial GaN Layers (1999) (9)
- Electrical Properties of GaN Bulk Single Crystals Doped with Mg (1999) (9)
- High-pressure direct synthesis of aluminium nitride (2002) (9)
- Capture kinetics at dislocation-related deep levels in III-V heterostructures (2004) (9)
- Capture kinetics at deep‐level electron traps in GaN‐based laser diode (2007) (8)
- Crystallization of GaN by HVPE on pressure grown seeds (2006) (8)
- Crystallization of free standing bulk GaN by HVPE (2006) (8)
- Low dislocation density, high power InGaN laser diodes (2004) (8)
- Growth of GaN on patterned GaN/sapphire substrates by high pressure solution method (2005) (8)
- Platelets and needles: Two habits of pressure-grown GaN crystals (2007) (8)
- High nitrogen pressure solution (HNPS) growth of GaN on 2 inch free standing GaN substrates (2011) (8)
- Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds (2010) (8)
- Interactions of LO Phonons with Bound Excitons in Homoepitaxial GaN (1997) (8)
- Homoepitaxial layers of gallium nitride grown by metalorganic vapour phase epitaxy (1997) (8)
- Ion Channeling Study of GaN Single Crystals (1997) (7)
- Photoemission study of Mn/GaN (2004) (7)
- Annealing of gallium nitride under high-N2 pressure (1999) (7)
- Relaxation Processes of AlGaN/GaN Heterostructures Grown onto Single Crystal GaN(0001) Substrates (1999) (7)
- Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths (2006) (7)
- The Effect of Hydrostatic Pressure on the Thermoelectric Power in Indium Antimonide (1963) (7)
- Epitaxy of ternary nitrides on GaN single crystals (1999) (7)
- High-pressure treatment of fruit, meat, and cheese products — equipment, methods and results (1999) (7)
- Polarity of GaN (1998) (7)
- Magnetic resonance studies of defects in GaN with reduced dislocation densities (2001) (7)
- GaN Bulk Substrates Grown under Pressure from Solution in Gallium (2010) (7)
- High Magnetic Field Observation of the Resonance Donor States of S in InSb (1981) (7)
- Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN–GaAlN quantum wells grown by molecular beam epitaxy (2001) (7)
- Electron spin resonance and Rashba field in GaN-based materials (2011) (7)
- Micro Defects in Nearly Dislocation Free GaN Doped with Mg during High Pressure Crystallization (1999) (6)
- GaMg)N new semiconductor grown at high pressure of nitrogen (1999) (6)
- Magneto-optical studies of donor impurities under high pressure (1983) (6)
- The decisive role of the water structure in changes of conformation of nucleic acids. (1999) (6)
- The effects of hydrostatic pressure on hot-electron phenomena in n-InSb (1969) (6)
- Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy (2013) (6)
- Diffusion of oxygen in bulk GaN crystals at high temperature and at high pressure (2016) (6)
- ODMR of bound excitons in Mg-doped GaN (1999) (6)
- Atomically flat GaMnN by diffusion of Mn into GaN(0001̄) (2006) (6)
- InN Thermodynamics and Crystal Growth at High Pressure of N2 (1993) (6)
- The Dependence of Thermoelectric Power and Conductivity of n‐Type Indium Antimonide on Hydrostatic Pressure (1969) (6)
- Measurements of the Temperature Dependence of the Hall Constant in HgTe under Pressure (1965) (6)
- Spectroscopic ellipsometry on GaN: Comparison between hetero-epitaxial layers and bulk crystals (1998) (6)
- Narrow Gap Semiconductors as Low Temperature Pressure Gauges (1978) (6)
- Comprehensive study of reliability of InGaN-based laser diodes (2007) (5)
- III-N ternary epi-layers grown on the GaN bulk crystals (2001) (5)
- [High pressure processing of spices in atmosphere of helium for decrease of microbiological contamination]. (2008) (5)
- Influence of dislocation and ionized impurity scattering on the electron mobility in GaN/AlGaN heterostructures (2005) (5)
- Resonant shake-up satellites in photoemission at the Ga 3p photothreshold in GaN (2005) (5)
- TEM study of Mg-doped bulk GaN crystals (1999) (5)
- Growth and Properties of Bulk Single Crystals of GaN (1995) (5)
- Compensation mechanisms in magnesium doped GaN (2004) (5)
- Far-Infrared Spectroscopy of Semiconductors in High Magnetic Fields (1981) (5)
- On the existence of two non-equivalent lattice positions of donors in n-type InSb (1974) (5)
- Strongly localized donor level in oxygen doped gallium nitride (1996) (5)
- Towards identification of degradation mechanisms in InGaN laser diodes grown on bulk GaN crystals (2006) (4)
- Surface reconstruction patterns of GaN grown by molecular beam epitaxy on GaN bulk crystals (1999) (4)
- (GaMg)N — New Wide Band Gap Semiconductor (1999) (4)
- Effect of Ultra High Pressure Under Argon and Temperature on the Volatiles and Piperine Content and Microbiological Quality of Black Pepper (Piper Nigrum L.) (2003) (4)
- Influence of high pressure on some biochemical properties of kefir microflora (effect of HPP on kefir microflora) (2003) (4)
- Pressure Phase Transition of HgSe (1964) (4)
- Growth of GaN Metalorganic Chemical Vapour Deposition Layers on GaN Single Crystals (1995) (4)
- Resonant photoemission study of Ti interaction with GaN surface (2006) (4)
- Properties of violet laser diodes grown on bulk GaN substrates (2005) (4)
- Structural defects in bulk GaN (2014) (4)
- The influence of indium on the growth of GaN from solution under high pressure (2010) (4)
- Tunable broad-area InGaN laser diodes in external cavity (2007) (4)
- EXCITONIC THERMALIZATION AND RECOMBINATION IN HOMOEPITAXIAL GALLIUM NITRIDE (1999) (4)
- Doping, Activation of Impurities, and Defect Annihilation in Gan by High Pressure Annealing (1997) (4)
- Stability of indium nitride at N2 pressure up to 20 kbar (2008) (4)
- True-blue laser diodes grown by plasma-assisted MBE on bulk GaN substrates (2014) (4)
- Dynamics of trapping on donors and relaxation of the B‐exciton in GaN (2003) (4)
- GaN homoepitaxy for device applications (1998) (4)
- Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm (2006) (3)
- The homoepitaxial challenge: GaN crystals grown at high pressure for laser diodes and laser diode arrays (2013) (3)
- BLUE AND UV SEMICONDUCTOR LASERS (2006) (3)
- Phase diagram determination of II-VI semiconductors (1994) (3)
- GaN(0 0 0 1_) surface doped with Fe atoms (2006) (3)
- Far-infrared studies of the bound and free carriers in n-InSb as a function of hydrostatic pressure (1983) (3)
- Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method (2006) (3)
- Observation of Magnetic Anisotropy in Bulk GaMnN:Mg Crystals (2003) (3)
- Crystallographic Properties of Bulk GaN Crystals Grown at High Pressure (1995) (3)
- Photoemission study of samarium on GaN(0 0 0 1) and CdTe(1 0 0) (2002) (3)
- Localization Effects in InGaN/GaN Double Heterostructure Laser Diode Structures Grown on Bulk GaN Crystals (2005) (3)
- Measurement of very small Zeeman splittings in GaN:Mn, Mg by Faraday rotation (2002) (3)
- In-depth and in-plane profiling of light emission properties from semiconductor-based heterostructures (2004) (3)
- Infrared Reflectivity and Transport Investigations of GaN Single Crystals and Homoepitaxial Layers (1999) (3)
- Correlating compositional, structural and optical properties of InGaN quantum wells by transmission electron microscopy (2018) (3)
- Interaction between shallow and deep impurity states in InSb (1985) (3)
- Interaction between T and L minima associated impurity states in n-InSb (1983) (3)
- Influence of Electric Field on Recombination Dynamics of Quantum Confined Carriers (2007) (3)
- Device advantage of the dislocation-free pressure grown GaN substrates (2003) (3)
- Influence of the substrate on the photo-luminescence dynamics in GaInN epilayers (2002) (3)
- Metastable donor states in Te- doped Gal−xAlxSb compounds (1983) (3)
- Liquid phase epitaxy of GaN on MOCVD GaN/sapphire and HVPE free-standing substrates under high nitrogen pressure (2008) (3)
- Properties Of Homoepitaxially Mbe-Grown Gan (1996) (3)
- Bowing of GaN bulk crystals with mismatched epitaxial structures of (AlInGa)N (2005) (2)
- First Step in Exploration of Fe–Ga–N System for Efficient Crystallization of GaN at High N2 Pressure (2018) (2)
- Ca3N2 as a flux for crystallization of GaN (2010) (2)
- High-pressure Processed Apple and Strawberry Desserts (1998) (2)
- Low Temperature Light Induced Change of the Chlorine Center Configuration in CdTe (1978) (2)
- Experimental and theoretical evidence of the temperature-induced wurtzite to rocksalt phase transition in GaN under high pressure (2020) (2)
- High pressure differential thermal analysis (DTA) and crystal growth of α‐HgS (2008) (2)
- High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions (2016) (2)
- High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates (2004) (2)
- High Power Continuous Wave Blue InAlGaN Laser Diodes Made by Plasma Assisted MBE (2006) (2)
- Studies of the deep levels in p‐type InSb under pressure (1984) (2)
- High‐Pressure Crystallization of GaN (2006) (2)
- New results in transport phenomena in uncompensated n-type InSb with extremely low carrier density (1983) (2)
- High magnetic field studies of AlGaN/GaN heterostructures grown on bulk GaN (2005) (2)
- Nitrogen Dissolution in Liquid Ga and Fe: Comprehensive Ab Initio Analysis, Relevance for Crystallization of GaN (2021) (2)
- MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure (2004) (2)
- Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy (1998) (2)
- Luminescence Dynamics of Exciton Replicas in Homoepitaxial GaN Layers (1997) (2)
- POLARITY RELATED PROBLEMS IN GROWTH OF GAN HOMOEPITAXIAL LAYERS (1998) (2)
- Influence of free electrons and point defects on the lattice parameters and thermal expansion of gallium nitride (1997) (2)
- Mass flow and reaction analysis of the growth of GaN by HVPE (2006) (2)
- Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wells (2005) (2)
- Growth of GaN on patterned thick HVPE free standing GaN substrates by high pressure solution method (2006) (2)
- High rate photoelectrochemical etching of GaN and the use of patterned substrates for HVPE regrowth (2008) (2)
- Influence of UHP Treatment on Quality of Ham (2002) (2)
- GaN Single Crystals Grown by High Pressure Solution Method (1998) (1)
- Luminescence of nonthermalized electron-hole plasma in GaN epilayers (2001) (1)
- InAlGaN laser diodes grown by plasma assisted molecular beam epitaxy. (2011) (1)
- Tunneling in dislocation‐free GaN/AlGaN double‐barrier diodes grown on bulk GaN (2007) (1)
- GaN — “High Pressure Semiconductor” in Modern Physics and Technology (2008) (1)
- Combustion synthesis of AlN at high pressure of nitrogen and argon mixtures (2008) (1)
- Microstructure of III-N semiconductors related to their applications in optoelectronics (2005) (1)
- Platelets and needles: two habits of pressure grown GaN crystals (2007) (1)
- Coupling of LO Phonons to Excitons in GaN (1996) (1)
- GaN based light emitters fabricated on bulk GaN substrates. New class of low dislocation density devices (2004) (1)
- Surface and electronic structure of Ga0.92In0.08N thin film investigated by photoelectron spectroscopy (2005) (1)
- Optical gain and saturation behavior in homoepitaxially grown InGaN/GaN/AlGaN laser structures (2007) (1)
- Insulin and Polylysine as Model Polypeptides for FTIR Studies of the Pressure-effect on Protein Aggregation (2003) (1)
- Pressure spectroscopy of localized levels (1982) (1)
- Influence of crystallization front direction on the Mg-related impurity centers incorporation in bulk GaN:Mg grown by HNPS method (2016) (1)
- AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy (2014) (1)
- Thermal analysis of InGaN/GaN (GaN substrate) laser diodes using transient interferometric mapping (2007) (1)
- III-V Semiconducting Nitrides Energy Gap under Pressure (1992) (1)
- The new insight into gallium nitride (GaN) melting under pressure (2014) (1)
- Secrets of GaN substrates properties for high luminousity of InGaN quantum wells (2008) (1)
- Continuous‐Wave Operation of Blue InGaN Laser Diodes Made by Plasma‐Assisted MBE (2007) (1)
- Epitaxial Layers Versus Bulk Single Crystals of GaN. Temperature Studies of Lattice Parameters and Energy Gap (1995) (1)
- Cathodoluminescence profiling of InGaN-based quantum well structures and laser diodes - In-plane instabilities of light emission (2003) (1)
- Epitaxy on GaN bulk crystals (2001) (1)
- Coexistence of Shallow and Localized Donor Centers in Bulk GaN Crystals Studied by High-Pressure Raman Spectroscopy (1996) (1)
- Application of Pressure Grown GaN Substrates to Epitaxy (1999) (1)
- Chapter 6 – The Application of High Nitrogen Pressure in the Physics and Technology of III–N Compounds (1998) (1)
- Photoluminescence of GaN layers studied with two-color spectroscopy (2003) (1)
- Inactivation of Bacteria at High Pressure (2002) (1)
- Physical properties of Ga-Fe-N system relevant for crystallization of GaN – Initial studies (2019) (1)
- Growth of GaN single crystals and properties of homoepitaxial MOCVD layers (1996) (1)
- Nonpolar GaN Quasi‐Wafers Sliced from Bulk GaN Crystals Grown by High‐Pressure Solution and HVPE Methods (2008) (1)
- High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown on Bulk GaN, SiC, and Sapphire Substrates (2000) (1)
- Growth of Large GaN single crystals (2011) (1)
- Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures (2000) (1)
- Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grown by molecular beam epitaxy (2001) (1)
- Piston-Cylinder Apparatus Operating at Liquid Helium Temperature (1978) (1)
- Growth of bulk GaN on GaN/sapphire templates by a high N2 pressure method (2004) (1)
- Defect Studies of GaN under Large Hydrostatic Pressure (1995) (1)
- Activity of Nucleic Acids and Peptides at High Pressure (1998) (1)
- Bowing of epitaxial layers grown on bulk GaN substrates (2005) (1)
- 16 nm tuning range of blue InGaN laser diodes achieved by 200 K temperature increase (2008) (1)
- Relationship between sample morphology and carrier diffusion length in GaN thin films (2002) (1)
- In-depth and in-plane profiling of light emission properties of InGaN-based laser diode (2004) (0)
- The use of Hydrostatic Pressure as an Additional Variable in Infrared Magneto-Optical Studies of III-V Compounds and Alloys (1985) (0)
- Potential of MBE for gallium nitride based lasers (2005) (0)
- Highly chemical reactive ion etching of GaN and its influence on Schottky contacts (1999) (0)
- True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates (2013) (0)
- Pressure effect on grain boundary dewetting and premelting transition in a Fe‐6 at.%Si bicrystal (2008) (0)
- Reliability of InGaN laser diodes grown on low dislocation density bulk GaN substrates (2006) (0)
- Impurities in semiconductors under pressure (1990) (0)
- Growth of GaN Single Crystals Under High Nitrogen Pressure (2021) (0)
- Growth of Gan MOCVD Layers on Gan Single Crystals (1996) (0)
- Highly chemical reactive ion etching of gallium nitride (1999) (0)
- Optically pumped lasing of GaN/AlGaN structures grown along a non‐polar crystallographic direction (2008) (0)
- PROCESS FOR PRODUCING GaN CRYSTALS WITH HIGH RESISTANCE (1998) (0)
- Localization effects in InGaN/GaN wide quantum well structures grown on bulk GaN crystals. (2006) (0)
- Free Electrons and Resonant Donor State in Gallium Nitride (1995) (0)
- MECHANICAL -CHEMISCHES POLISHING CRYSTALS AND epitaxial layer of GaN OFF AND Ga 1-x-yAlxInyN (1998) (0)
- GaP-GaN Pseudobinary System. Crystal Growth of GaN from the Solution in the Liquid GaP (1993) (0)
- New Hydrostatic Pressure Results on Sulphur Impurity Center in GaSb (1978) (0)
- Production method of p-type and n-type nitrogen-containing aiii-bv-semiconductor compounds (1998) (0)
- Title : Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN Year : 2005 Version : Final (2015) (0)
- Neutral donor bound excitons studied by selective photoluminescence in wurtzite GaN (2001) (0)
- Load dislocation density broad area high power CW operated InGaN laser diodes (2006) (0)
- Optically Pumped Laser Action on Nitride Based Separate Confinement Heterostructures Grown along the (11¯20) Crystallographic Direction (2007) (0)
- Development of Blue Optoelectronics- government project (2001) (0)
- MnAs overlayer on GaN(000(1)under-bar)-(1 x 1) its growth, morphology and electronic structure (2004) (0)
- Melting of GaN -- still open problem (2013) (0)
- Phase Diagram Determination of II‐VI Semiconductors. (1995) (0)
- Influence of Mg and In on defect formation in GaN: bulk and MOCVD grown samples (2000) (0)
- Photoluminescence mechanisms in undoped and in Mg doped bulk GaN (1999) (0)
- Thermodynamics and Growth of GaN Single Crystals Under Pressure (1997) (0)
- Application of high pressure in food technology and medicine (1998) (0)
- Crystalline layered structure and process for their manufacture (1994) (0)
- High Pressure Freeze-out of Electrons in Undoped GaN Crystal. Proof of Existence of Resonant Donor State (Nitrogen Vacancy) (1995) (0)
- MnAs dots on GaN(0001̄) surface — growth process and electronic structure (2007) (0)
- Effect of threading dislocations, Mg-doping and etching on the photoconductivity spectra of GaN (1999) (0)
- High temperature bulk diffusion in GaN (2013) (0)
- Effect of high pressure on grain boundary migration in aluminium bicrystals (2008) (0)
- Ultra High Pressure Treatment of Streptomyces sp. R61 (1999) (0)
- Carrier Localization in Gallium Nitride (1995) (0)
- Luminescence of Doped and Undoped Bulk Crystals of GaN (1995) (0)
- Neutral Mn Acceptor in GaN Studied in High Magnetic Fields (2005) (0)
- Raman Determination of the Phonon Deformation Potentials in a-GaN (1998) (0)
- Excitons in GaN/AlGaN homoepitaxial quantum wells grown along the nonpolar (02-11) direction on bulk GaN substrates. (2006) (0)
- ``Physics is the Most Important'' - Leonard Sosnowski (2022) (0)
- Crystal growth of GaN from solution in Ga under high nitrogen pressure (1984) (0)
- POLISSAGE MECANOCHIMIQUE DE CRISTAUX ET DE COUCHES EPITAXIALES DE GaN ET DE Ga1-x-yAlxInyN (1998) (0)
- A RESONANT PHOTOEMISSION STUDY OF Co/GaN SYSTEM (2005) (0)
- Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies (2004) (0)
- What is new in nitride laser diodes reliability studies (2009) (0)
- High Pressure Processed Apple Desserts. Microbiological and Physicochemical Properties (1999) (0)
- Optoelectronic devices built on bulk GaN substrates (2002) (0)
- Magnetic Freeze-Out and High Pressure Induced Metal-Nonmetal Transition in Low Concentration n-Type InSb'" (1981) (0)
- Light emitters fabricated on bulk GaN substrates. Challenges and achievements. (2001) (0)
- A crystalline multi-layer structure and process for production thereof (1994) (0)
- Magneto-Spectroscopy of Two-Electron Transitions in Homoepitaxial GaN. (2001) (0)
- Mg Segregation, Difficulties of P-Doping in GaN (1999) (0)
- Shubnikov-de Haas effect in heavily doped n-InSb under pressure (1983) (0)
- Optically Pumped InGaN/GaN/AlGaN MQW Laser Structures (2004) (0)
- Rashba field in GaN (2010) (0)
- Mechanisms of Yellow and Red Photoluminescence in Wurtzite and Cubic GaN (1998) (0)
- Studies on the Mechanism of the Aminoacylation Reaction of Transfer Ribonucleic Acid at High Pressure (1999) (0)
- Mn impurity in GaN studied by electron paramagnetic resonance (2003) (0)
- Adsorption and dissolution of nitrogen in lithium—QM DFT investigation (2007) (0)
- Intrinsic Mechanisms of Stimulated Emission in Homoepitaxial GaN (2003) (0)
- Comparison of Physical Properties of Bulk Crystals and Epitaxial Layers of GaN (1996) (0)
- Using pressure to probe thermodynamic anomalies in tetrahedrally-bonded materials (2019) (0)
- Properties of bulk gallium nitride crystals (1996) (0)
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